JP2001032075A - Plasma CVD apparatus and film forming method using the same - Google Patents
Plasma CVD apparatus and film forming method using the sameInfo
- Publication number
- JP2001032075A JP2001032075A JP11204069A JP20406999A JP2001032075A JP 2001032075 A JP2001032075 A JP 2001032075A JP 11204069 A JP11204069 A JP 11204069A JP 20406999 A JP20406999 A JP 20406999A JP 2001032075 A JP2001032075 A JP 2001032075A
- Authority
- JP
- Japan
- Prior art keywords
- plasma cvd
- cvd apparatus
- counter electrode
- reaction vessel
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】
【課題】 高圧の反応ガスを用いた場合にも、粒子が対
向電極に付着するのが有効に防止される、プラズマＣＶ
Ｄ装置を提供する。
【解決手段】 基板２上に薄膜を形成するためのプラズ
マＣＶＤ装置であって、反応容器１と、反応容器１の内
部に設けられ基板２が配置される接地電極３と、反応容
器１の内部に設けられ基板２と対向するように配置され
た対向電極４とを備え、対向電極４の表面４ａは、鏡面
仕上げにされている。
(57) Abstract: A plasma CV capable of effectively preventing particles from adhering to a counter electrode even when a high-pressure reaction gas is used.
D device is provided. A plasma CVD apparatus for forming a thin film on a substrate (2), comprising: a reaction vessel (1); a ground electrode (3) provided inside the reaction vessel (1) on which the substrate (2) is arranged; And a counter electrode 4 arranged to face the substrate 2. The surface 4 a of the counter electrode 4 is mirror-finished.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマＣＶＤ装
置およびそれを用いた成膜方法に関するものであり、た
とえば、薄膜太陽電池等の製造に用いられるプラズマＣ
ＶＤ装置およびそれを用いた成膜方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma CVD apparatus and a film forming method using the same, for example, a plasma CVD apparatus used for manufacturing a thin film solar cell or the like.
The present invention relates to a VD apparatus and a film forming method using the same.
【０００２】[0002]
【従来の技術】近年、クリーンエネルギの利用がますま
す叫ばれるようになり、それに伴い太陽電池の利用の促
進が図られている。また、太陽電池の量産化に相俟っ
て、生産効率の向上が種々検討されている。2. Description of the Related Art In recent years, the use of clean energy has been increasingly called out, and accordingly, the use of solar cells has been promoted. In addition to mass production of solar cells, various studies have been made to improve production efficiency.
【０００３】たとえば、薄膜太陽電池の場合、生産効率
を向上させるためには、シリコン薄膜の成膜速度を上げ
ることが必要となる。For example, in the case of a thin-film solar cell, it is necessary to increase the deposition rate of a silicon thin film in order to improve production efficiency.
【０００４】ここで、従来、薄膜太陽電池の製造におい
ては、プラズマＣＶＤ装置が用いられていた。[0004] Heretofore, in the manufacture of thin-film solar cells, a plasma CVD apparatus has been used.
【０００５】[0005]
【発明が解決しようとする課題】プラズマＣＶＤ装置を
用いて薄膜太陽電池を製造する場合において、シリコン
薄膜の成膜速度を上げるためには、反応ガスの高圧化が
考えられる。しかしながら、このように高圧化を行なっ
た場合には、反応ガスから不所望な粒子等が多く析出
し、これが対向電極等に付着して、基板上に成長中の薄
膜上に落下して欠陥の原因となる、といった問題が発生
する可能性があった。In the case of manufacturing a thin-film solar cell using a plasma CVD apparatus, it is conceivable to increase the reaction gas pressure in order to increase the deposition rate of a silicon thin film. However, when the pressure is increased in this manner, many undesired particles and the like are precipitated from the reaction gas, adhere to the counter electrode, etc., drop on the thin film growing on the substrate, and generate defects. This could cause problems.
【０００６】特に、従来のプラズマＣＶＤ装置において
は、対向電極の表面に粗目処理を施して、粒子をわざと
付着させて、成膜中の薄膜上に落下するのを防止してい
る。しかしながら、この場合には、付着した粒子が一定
量を超えると、大きな塊となって落下してしまう可能性
があった。In particular, in the conventional plasma CVD apparatus, the surface of the counter electrode is subjected to a roughening treatment so that particles are intentionally attached to the surface to prevent the particles from dropping on the thin film being formed. However, in this case, if the amount of the attached particles exceeds a certain amount, there is a possibility that the particles fall as a large lump.
【０００７】この発明の目的は、たとえば高圧の反応ガ
スを用いた場合にも、粒子が対向電極に付着するのが有
効に防止される、プラズマＣＶＤ装置およびそれを用い
た成膜方法を提供することにある。An object of the present invention is to provide a plasma CVD apparatus and a film forming method using the same, which effectively prevent particles from adhering to a counter electrode even when a high-pressure reaction gas is used, for example. It is in.
【０００８】[0008]
【課題を解決するための手段】この発明によるプラズマ
ＣＶＤ装置は、基板上に薄膜を形成するためのプラズマ
ＣＶＤ装置であって、反応容器と、反応容器の内部に設
けられ基板が配置される接地電極と、反応容器の内部に
設けられ基板と対向するように配置された対向電極とを
備え、対向電極の表面は、鏡面仕上げにされている。SUMMARY OF THE INVENTION A plasma CVD apparatus according to the present invention is a plasma CVD apparatus for forming a thin film on a substrate, comprising: a reaction vessel; An electrode and a counter electrode provided inside the reaction vessel and arranged to face the substrate, and the surface of the counter electrode is mirror-finished.
【０００９】好ましくは、反応容器の内部であって、反
応ガスと接する表面のすべてが、鏡面仕上げにされてい
るとよい。Preferably, all surfaces inside the reaction vessel, which are in contact with the reaction gas, are mirror-finished.
【００１０】この発明による半導体膜の成膜方法は、上
述したプラズマＣＶＤ装置を用いることを特徴としてい
る。A method of forming a semiconductor film according to the present invention is characterized by using the above-described plasma CVD apparatus.
【００１１】この発明による成膜方法は、上述したプラ
ズマＣＶＤ装置を用いた成膜方法であって、成膜直前
に、対向電極の表面に付着した粒子を吹き飛ばすことが
できる程度に大量のガスを流すステップを備えている。[0011] The film forming method according to the present invention is a film forming method using the above-mentioned plasma CVD apparatus, wherein a large amount of gas is blown to the extent that particles adhering to the surface of the counter electrode can be blown off immediately before film forming. It has a flowing step.
【００１２】好ましくは、成膜直前に、反応容器の内部
であって、反応ガスと接するすべての表面に付着した粒
子を吹き飛ばすことができる程度に大量のガスを流すス
テップを備えるとよい。Preferably, immediately before film formation, a step of flowing a large amount of gas such that particles adhered to all surfaces inside the reaction vessel and in contact with the reaction gas can be blown off may be provided.
【００１３】好ましくは、成膜中の反応ガスの流量が、
基板に対して０．１ｓｃｃｍ／ｃｍ 2を超えるステップ
を備えるとよい。Preferably, the flow rate of the reaction gas during the film formation is
0.1 sccm / cm for substrate TwoSteps beyond
It is good to have.
【００１４】[0014]
【発明の実施の形態】図１は、本発明によるプラズマＣ
ＶＤ装置の一例の構造を模式的に示す断面図である。FIG. 1 shows a plasma C according to the present invention.
It is sectional drawing which shows the structure of an example of a VD apparatus typically.
【００１５】図１を参照して、このプラズマＣＶＤ装置
は、反応容器１と、反応容器１の内部下方に設けられた
接地電極３と、反応容器１の内部上方に設けられた対向
電極４とを備えている。Referring to FIG. 1, the plasma CVD apparatus includes a reaction vessel 1, a ground electrode 3 provided below the inside of the reaction vessel 1, and a counter electrode 4 provided above the inside of the reaction vessel 1. It has.
【００１６】ここで、このプラズマＣＶＤ装置において
は、対向電極４の表面４ａ、反応容器１の内部表面１
ａ、および接地電極３の表面３ａ等の反応容器１の内部
であって基板２の表面を除いて反応ガスと接する表面の
すべてが、鏡面仕上げにされている。そのため、対向電
極４の表面４ａ、反応容器１の内部表面１ａ、および接
地電極３の表面３ａ等のいずれにおいても、パーティク
ルの成長が防止される。In this plasma CVD apparatus, the surface 4a of the counter electrode 4 and the inner surface 1 of the reaction vessel 1 are used.
a and all surfaces in contact with the reaction gas except for the surface of the substrate 2 inside the reaction vessel 1 such as the surface 3a of the ground electrode 3 are mirror-finished. Therefore, particle growth is prevented on any of the surface 4a of the counter electrode 4, the inner surface 1a of the reaction vessel 1, and the surface 3a of the ground electrode 3.
【００１７】なお、本願明細書において、「鏡面仕上
げ」とは、表面荒さである最大高さＲｍａｘが０．１μ
ｍ以下であることが好ましく、また０．０８μｍ以下で
あることがさらに好ましい。また、鏡面加工は、バフ研
磨（機械研磨）や電解研磨によりなされることが多い
が、十分な表面性を得るためには、例えば電解複合研磨
等を行なう必要がある。In the specification of the present application, "mirror finish" means that the maximum height Rmax, which is the surface roughness, is 0.1 μm.
m or less, and more preferably 0.08 μm or less. In addition, mirror finishing is often performed by buff polishing (mechanical polishing) or electrolytic polishing, but in order to obtain sufficient surface properties, it is necessary to perform, for example, electrolytic composite polishing.
【００１８】また、このように構成されるプラズマＣＶ
Ｄ装置を用いて薄膜成長を行なう際には、対向電極４の
表面４ａから反応ガスを導入する。このとき、この例に
よれば、成膜の直前に大量のガスを流すことにより、対
向電極４の表面４ａ、反応容器１の内部表面１ａ、およ
び接地電極３の表面３ａ等の、反応容器１の内部であっ
て反応ガスと接するすべての表面に付着したパーティク
ルを吹き飛ばすことができる。Further, the plasma CV thus configured
When a thin film is grown using the D apparatus, a reaction gas is introduced from the surface 4a of the counter electrode 4. At this time, according to this example, by flowing a large amount of gas immediately before film formation, the reaction vessel 1 such as the surface 4a of the counter electrode 4, the inner surface 1a of the reaction vessel 1, and the surface 3a of the ground electrode 3 is formed. Particles attached to all surfaces in contact with the reaction gas inside the gas can be blown off.
【００１９】さらに、このように構成されるプラズマＣ
ＶＤ装置を用いて薄膜成長を行なう際には、成膜中の反
応ガスの流量が基板に対して０．１ｓｃｃｍ／ｃｍ2を
超える値に設定される。このように成膜中のガス流量を
多くすることによって、粒子が表面に付着した場合であ
っても、大きな塊に成長する前にすぐに吹き飛ばすこと
ができる。Further, the plasma C configured as described above
When a thin film is grown using a VD apparatus, the flow rate of a reaction gas during film formation is set to a value exceeding 0.1 sccm / cm 2 with respect to the substrate. By increasing the gas flow rate during film formation in this way, even if particles adhere to the surface, they can be blown off immediately before growing into large lumps.
【００２０】[0020]
【実施例】（実施例）デポダウン型のプラズマＣＶＤ装
置を用いて、ｎｉｐ型太陽電池の光電変換層を作製し
た。プラズマＣＶＤ装置においては、対向電極の表面を
鏡面処理したものを用いた。また、薄膜の成膜条件は、
以下のとおりであった。EXAMPLES (Example) Using a deposition-down type plasma CVD apparatus, a photoelectric conversion layer of a nip type solar cell was manufactured. In the plasma CVD apparatus, a mirror-finished surface of the counter electrode was used. The conditions for forming the thin film are as follows:
It was as follows.
【００２１】反応ガス：シラン／水素比＝１／１７０ ガス圧力：１０Ｔｏｒｒ 放電パワー：３００ｍｗ／ｃｍ2 基板温度：１８０℃ この実施例においては、対向電極から剥がれ落ちたパー
ティクル由来のピンホールが生じることによるメンテナ
ンスサイクルは、１００バッチ以上であった。Reactant gas: silane / hydrogen ratio = 1/170 Gas pressure: 10 Torr Discharge power: 300 mw / cm 2 Substrate temperature: 180 ° C. In this embodiment, pinholes derived from particles peeled off from the counter electrode are generated. The maintenance cycle was 100 batches or more.
【００２２】（比較例）一方、比較のため、対向電極の
表面に粗目処理を施したプラズマＣＶＤ装置を用いる他
は実施例と全く同様にして、ｎｉｐ型太陽電池の光電変
換層を作製した。Comparative Example On the other hand, for comparison, a photoelectric conversion layer of a nip type solar cell was produced in exactly the same manner as in the example except that a plasma CVD apparatus in which the surface of the counter electrode was subjected to a coarse treatment was used.
【００２３】この比較例においては、対向電極から剥が
れ落ちたパーティクル由来のピンホールが生じることに
よるメンテナンスサイクルは、５０バッチであった。In this comparative example, the maintenance cycle due to the generation of pinholes derived from particles peeled off from the counter electrode was 50 batches.
【００２４】また、得られた太陽電池の特性を評価した
ところ、以下のとおりであった。 開放端電圧：０．５１８Ｖ 短絡電流密度：２７．２ｍＡ／ｃｍ2 曲線因子：７４．３％ 変換効率：１０．５％The characteristics of the obtained solar cell were evaluated as follows. Open-end voltage: 0.518 V Short-circuit current density: 27.2 mA / cm 2 Fill factor: 74.3% Conversion efficiency: 10.5%
【００２５】[0025]
【発明の効果】以上説明したように、この発明によれ
ば、対向電極表面や反応容器内表面における粒子の付着
が有効に防止される。As described above, according to the present invention, particles are effectively prevented from adhering to the surface of the counter electrode or the inner surface of the reaction vessel.
【００２６】さらに、粒子が一旦付着した場合にも、大
きな塊に成長することなく、速やかに吹き飛ばされる。Further, even if the particles once adhere, they are quickly blown off without growing into a large lump.
【００２７】その結果、成膜中に対向電極等に付着した
粒子等が落下して欠陥の原因になるという従来の問題が
解決される。As a result, the conventional problem that particles or the like adhered to the counter electrode or the like during film formation drop and cause a defect is solved.
【図１】 本発明によるプラズマＣＶＤ装置の一例の構
成を模式的に示す断面図である。FIG. 1 is a cross-sectional view schematically showing a configuration of an example of a plasma CVD apparatus according to the present invention.
１ 反応容器、２ 基板、３ 接地電極、４ 対向電
極。1 reaction vessel, 2 substrates, 3 ground electrodes, 4 counter electrodes.
フロントページの続き Ｆターム(参考） 4K030 AA06 AA17 BA29 DA06 FA03 JA05 KA15 KA49 LA16 5F045 AA08 AC01 AD05 AE23 BB14 CA13 EB05 EC05 EE12 EH04 EH14 5F051 AA05 BA14 CA15 CA23 CA24 DA04 Continued on front page F-term (reference) 4K030 AA06 AA17 BA29 DA06 FA03 JA05 KA15 KA49 LA16 5F045 AA08 AC01 AD05 AE23 BB14 CA13 EB05 EC05 EE12 EH04 EH14 5F051 AA05 BA14 CA15 CA23 CA24 DA04
Claims (6)
ＣＶＤ装置であって、 反応容器と、 前記反応容器の内部に設けられ、前記基板が配置される
接地電極と、 前記反応容器の内部に設けられ、前記基板と対向するよ
うに配置された対向電極と、 を備え、 前記対向電極の表面は、鏡面仕上げにされている、プラ
ズマＣＶＤ装置。1. A plasma CVD apparatus for forming a thin film on a substrate, comprising: a reaction vessel; a ground electrode provided inside the reaction vessel, wherein the substrate is disposed; And a counter electrode provided so as to face the substrate, wherein a surface of the counter electrode is mirror-finished.
と接する表面のすべてが、鏡面仕上げにされている、請
求項１記載のプラズマＣＶＤ装置。2. The plasma CVD apparatus according to claim 1, wherein all surfaces inside the reaction vessel, which are in contact with the reaction gas, are mirror-finished.
マＣＶＤ装置を用いることを特徴とする、半導体膜の成
膜方法。3. A method for forming a semiconductor film, comprising using the plasma CVD apparatus according to claim 1 or 2.
いた成膜方法であって、 成膜直前に、前記対向電極の表面に付着した粒子を吹き
飛ばすことができる程度に大量のガスを流すステップを
備えた、成膜方法。4. A film forming method using a plasma CVD apparatus according to claim 1, wherein a large amount of gas is flowed just before the film formation so that particles attached to the surface of the counter electrode can be blown off. A film forming method comprising:
いた成膜方法であって、 成膜直前に、前記反応容器の内部であって、前記反応ガ
スと接するすべての表面に付着した粒子を吹き飛ばすこ
とができる程度に大量のガスを流すステップを備えた、
成膜方法。5. A film forming method using a plasma CVD apparatus according to claim 2, wherein particles adhering to all surfaces inside the reaction vessel and in contact with the reaction gas are formed immediately before film formation. With a step of flowing a large amount of gas that can be blown off,
Film formation method.
対して０．１ｓｃｃｍ／ｃｍ2を超えるステップを備え
た、請求項４または請求項５に記載の成膜方法。6. The film forming method according to claim 4, further comprising a step in which a flow rate of a reaction gas during film forming exceeds 0.1 sccm / cm 2 with respect to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11204069A JP2001032075A (en) | 1999-07-19 | 1999-07-19 | Plasma CVD apparatus and film forming method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11204069A JP2001032075A (en) | 1999-07-19 | 1999-07-19 | Plasma CVD apparatus and film forming method using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001032075A true JP2001032075A (en) | 2001-02-06 |
Family
ID=16484260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11204069A Withdrawn JP2001032075A (en) | 1999-07-19 | 1999-07-19 | Plasma CVD apparatus and film forming method using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001032075A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003019633A1 (en) * | 2001-08-24 | 2003-03-06 | Tokyo Electron Limited | Method of surface-processing components of vacuum processing device |
| JPWO2003092291A1 (en) * | 2002-04-25 | 2005-09-08 | 松下電器産業株式会社 | Object detection apparatus, object detection server, and object detection method |
| JP2014157942A (en) * | 2013-02-15 | 2014-08-28 | Toshiba Corp | Plasma processing apparatus |
-
1999
- 1999-07-19 JP JP11204069A patent/JP2001032075A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003019633A1 (en) * | 2001-08-24 | 2003-03-06 | Tokyo Electron Limited | Method of surface-processing components of vacuum processing device |
| JPWO2003092291A1 (en) * | 2002-04-25 | 2005-09-08 | 松下電器産業株式会社 | Object detection apparatus, object detection server, and object detection method |
| JP2014157942A (en) * | 2013-02-15 | 2014-08-28 | Toshiba Corp | Plasma processing apparatus |
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