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JP4478115B2 - Method for forming conductive circuit - Google Patents

Method for forming conductive circuit Download PDF

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JP4478115B2
JP4478115B2 JP2006018434A JP2006018434A JP4478115B2 JP 4478115 B2 JP4478115 B2 JP 4478115B2 JP 2006018434 A JP2006018434 A JP 2006018434A JP 2006018434 A JP2006018434 A JP 2006018434A JP 4478115 B2 JP4478115 B2 JP 4478115B2
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layer
substrate
cycloolefin
primary substrate
conductive layer
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JP2007201212A (en
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哲男 湯本
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Sankyo Kasei Co Ltd
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Sankyo Kasei Co Ltd
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Priority to JP2006018434A priority Critical patent/JP4478115B2/en
Priority to US12/087,441 priority patent/US20090000951A1/en
Priority to CN2007800035901A priority patent/CN101375649B/en
Priority to PCT/JP2007/050954 priority patent/WO2007086359A1/en
Priority to DE602007009482T priority patent/DE602007009482D1/en
Priority to EP07707217A priority patent/EP1976352B1/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/184Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0158Polyalkene or polyolefin, e.g. polyethylene [PE], polypropylene [PP]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0212Resin particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09118Moulded substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09909Special local insulating pattern, e.g. as dam around component
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0756Uses of liquids, e.g. rinsing, coating, dissolving
    • H05K2203/0773Dissolving the filler without dissolving the matrix material; Dissolving the matrix material without dissolving the filler
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/381Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)

Description

本発明は、シクロオレフィン系樹脂を射出成形した基体の表面に、無電解めっきによって導電性回路を形成する方法に関し、特にこの無電解めっきの工程において、極性付与(または湿潤化ともいう。)を必要としない導電性回路の形成方法に関する。   The present invention relates to a method of forming a conductive circuit by electroless plating on the surface of a substrate on which a cycloolefin-based resin is injection-molded, and in particular, in the electroless plating step, imparting polarity (also referred to as wetting). The present invention relates to a method for forming a conductive circuit that is not required.

携帯電話機等の電子機器に使用する電気回路を形成するため、無電解めっきによって、絶縁性樹脂からなる基体の表面に、銅等の導電性物質の層からなる所定の回路パターンを形成する方法が各種提案されている。これらの方法の一つに、高周波信号に対して誘電正接が低く、かつ耐薬品性に優れるシクロオレフィン系樹脂を射出成形した基板の表面に、無電解めっきによって、導電性物質の層からなる所定の回路パターンを形成する方法がある(例えば特許文献1参照。)。   A method of forming a predetermined circuit pattern made of a layer of a conductive material such as copper on the surface of a base made of an insulating resin by electroless plating in order to form an electric circuit used for an electronic device such as a cellular phone. Various proposals have been made. In one of these methods, a predetermined layer consisting of a conductive material layer is formed by electroless plating on the surface of a substrate on which a cycloolefin resin having a low dielectric loss tangent to a high frequency signal and excellent chemical resistance is injection molded. There is a method of forming a circuit pattern (see, for example, Patent Document 1).

この導電性物質の層からなる所定の回路パターンを形成する方法は、次のとおりである。すなわち、まずゴム弾性体等の軟質重合体を含有させた非結晶性樹脂であるシクロオレフィン系樹脂を射出成形して基板を形成する。次いでこの基板の表面に、熱可塑性のポリエステル系樹脂を射出成形等して、導電性回路を形成すべき部分を残してマスキングする。そしてこのようにマスキングした基板をエッチング液に浸漬して、ゴム弾性体等の軟質重合体を含有する基板と、マスキング材との表面を粗化し、この粗化した基板とマスキング材との表面に、無電解めっきの触媒核となる触媒を付与する。なおシクロオレフィン系樹脂自体は、耐エッチング性を有するが、このシクロオレフィン系樹脂に含有させたゴム弾性体等の軟質重合が、エッチング液によって溶解するため、マスキングで覆われていない基板の表面も粗化される。   A method of forming a predetermined circuit pattern made of this conductive material layer is as follows. That is, first, a cycloolefin resin, which is an amorphous resin containing a soft polymer such as a rubber elastic body, is injection-molded to form a substrate. Next, a thermoplastic polyester resin is injection-molded on the surface of the substrate to mask a portion where a conductive circuit is to be formed. Then, the masked substrate is immersed in an etching solution to roughen the surfaces of the substrate containing the soft polymer such as a rubber elastic body and the masking material, and on the roughened substrate and the masking material. The catalyst used as the catalyst nucleus of electroless plating is provided. Although the cycloolefin resin itself has etching resistance, since the soft polymerization of the rubber elastic body and the like contained in the cycloolefin resin is dissolved by the etching solution, the surface of the substrate not covered with masking is also present. Roughened.

次に基板の表面を覆うマスキング材を除去すると、この基板の表面には、表面が粗化され、かつ触媒が付与された導電性回路を形成すべき部分が形成されるので、この基板全体を無電解めっき液に浸漬すれば、この導電性回路を形成すべき部分に導電性回路を形成することができる。なおマスキング材を除去した部分は、無電解めっきに必要な表面粗化と触媒付与とがなされていないため、めっき層は形成されず、導電性回路の絶縁性が確保される。
特開2003−115645号公報(1〜7頁)
Next, when the masking material covering the surface of the substrate is removed, the surface of the substrate is roughened and a portion where a conductive circuit to which a catalyst is applied is to be formed is formed. When immersed in an electroless plating solution, a conductive circuit can be formed in a portion where the conductive circuit is to be formed. In addition, since the surface roughening required for electroless plating and catalyst provision are not made | formed in the part which removed the masking material, a plating layer is not formed but the insulation of an electroconductive circuit is ensured.
JP 2003-115645 A (pages 1 to 7)

上述した特許文献1に記載の手段は、導電性回路を形成する基板として、高周波信号に対して誘電正接が低く、かつ耐薬品性、耐熱性、及び耐水性等を有するシクロオレフィン系樹脂を使用することによって、高周波領域における誘電損が低く、耐久性に優れた回路基板を提供するものである。しかるにこの手段には、多くの改良すべき点があった。すなわち第1に、上述した手段では、熱可塑性樹脂からなるマスクもエッチングによって粗化され、触媒を付与されるため、このマスク上にも無電解めっき層が形成される。したがって、基体上の導電性回路を形成すべき部分にのみ、無電解めっき層を選択的に形成するためには、この無電解めっきの前あるいは後に、このマスクを除去する必要がある。したがってマスクを除去するための工程や設備が必要になり、その分コストと製造時間が増加する。   The means described in Patent Document 1 uses a cycloolefin resin having a low dielectric loss tangent to a high-frequency signal and having chemical resistance, heat resistance, water resistance, etc. as a substrate for forming a conductive circuit. Thus, a circuit board having a low dielectric loss in a high frequency region and excellent in durability is provided. However, this means had many improvements. That is, firstly, in the above-described means, a mask made of a thermoplastic resin is also roughened by etching and given a catalyst, so that an electroless plating layer is also formed on this mask. Therefore, in order to selectively form the electroless plating layer only on the portion where the conductive circuit is to be formed on the substrate, it is necessary to remove the mask before or after the electroless plating. Therefore, a process and equipment for removing the mask are required, and the cost and manufacturing time increase accordingly.

第2には、絶縁基体に導電性回路を形成する手段としては、上述した手段のように、めっき性の基体の表面であって、マスクで覆われていない部分にのみ選択的に無電解めっき等を行う手段と、その逆に非めっき性の基体上に、めっき性の被めっき層を形成し、この被めっき層上にのみ選択的に無電解めっき等を行う手段とがある。しかるに後者の手段においては、無電解めっき等で形成した導電性回路の下側に、被めっき層がそのまま残存する。したがって、このように被めっき層を基体上に残存させる構成では、この被めっき層も基体と同様に、高周波信号に対して誘電正接が低く、かつ耐薬品性、耐熱性、及び耐水性等を有することが望ましい。また被めっき層と基体との間の相溶性をより向上させて、両者の密着性を更に強固にすることが望ましい。   Second, as a means for forming a conductive circuit on an insulating substrate, electroless plating is selectively performed only on a portion of the surface of the plating substrate that is not covered with a mask, as in the above-described means. On the contrary, there is a means for forming a plated layer to be plated on a non-platable substrate and selectively performing electroless plating only on the plated layer. However, in the latter means, the layer to be plated remains as it is below the conductive circuit formed by electroless plating or the like. Therefore, in the configuration in which the layer to be plated is left on the substrate in this manner, the layer to be plated also has a low dielectric loss tangent to a high frequency signal, and has chemical resistance, heat resistance, water resistance, etc. It is desirable to have. Moreover, it is desirable to further improve the compatibility between the layer to be plated and the substrate and further strengthen the adhesion between them.

第4に、通常無電解めっきの核となる触媒を付与するためには、触媒の付与面が触媒イオンを引き付ける極性基(親水性)を有する必要があり、そのために表面活性剤等による極性付与(湿潤化)の工程が必要となる。ここで仮に、極性付与(湿潤化)の工程が省略できれば、その分コストと製造時間とを削減することができる。そして第5に、無電解めっきは、いわゆる銅、ニッケル、あるいは金等の単体金属のめっき層の形成であって、合金のめっき層を形成することはできない。したがって、無電解めっきだけでは、スイッチ等の接触圧に対する耐久性が不足し、またこの導電性回路にコネクタ用の接触子を溶接等することが困難となる。   Fourthly, in order to impart a catalyst that is usually the core of electroless plating, the imparted surface of the catalyst must have a polar group (hydrophilicity) that attracts catalyst ions. A (wetting) step is required. Here, if the polarity imparting (wetting) step can be omitted, the cost and the manufacturing time can be reduced accordingly. Fifth, the electroless plating is the formation of a plating layer of a single metal such as so-called copper, nickel, or gold, and cannot form an alloy plating layer. Therefore, the durability with respect to the contact pressure of a switch or the like is insufficient only by electroless plating, and it becomes difficult to weld a contact for a connector to this conductive circuit.

そこで本発明の目的は、上述した問題点を解決できる導電性回路の形成方法を提供することにある。具体的には、第1に、基体上に形成したマスクを除去する必要をなくすることにある。第2に、基体およびマスク双方について、高周波信号に対して誘電正接が低く、かつ耐薬品性、耐熱性、及び耐水性等を有するようにすることにある。第3に、マスク材と基体との間の相溶性をより向上させ、両者の密着性をより強固にすることにある。第4に、無電解めっき用の触媒を付与するための極性付与(湿潤化)工程を省略することにある。そして第5に、耐久性と溶接性を向上させた導電性回路を形成することにある。   Accordingly, an object of the present invention is to provide a method for forming a conductive circuit that can solve the above-described problems. Specifically, first, there is no need to remove the mask formed on the substrate. Secondly, both the substrate and the mask have a low dielectric loss tangent to a high-frequency signal and have chemical resistance, heat resistance, water resistance, and the like. Thirdly, the compatibility between the mask material and the substrate is further improved, and the adhesion between them is further strengthened. Fourthly, the polarity imparting (wetting) step for imparting a catalyst for electroless plating is omitted. And fifth, there is to form a conductive circuit with improved durability and weldability.

本願発明者は、鋭意研究を重ねた結果、基体とこの基体の表面を選択的に覆うマスクとの双方にシクロオレフィン系樹脂を使用し、いずれか一方にのみ軟質重合体を混合することにより、上述した課題を、一挙に解決できることを見出した。   As a result of extensive research, the inventor of the present application uses a cycloolefin-based resin for both the base and the mask that selectively covers the surface of the base, and by mixing the soft polymer only in one of the two, It has been found that the above-mentioned problems can be solved at once.

すなわちシクロオレフィン系樹脂は、シクロオレフィン樹脂単体とシクロオレフィン樹脂に線状オレフィンを共重合させた、シクロオレフィン共重合樹脂があり、双方共に上述したように高周波信号に対して誘電正接が低く、かつ耐薬品性、耐熱性、及び耐水性等を有するため、これを基体だけでなく、基体とマスキングとの双方に使用することによって、基体だけにシクロオレフィン系樹脂を使用する場合に比べて、より高周波領域における誘電損が低く、耐久性に優れた回路基板を形成できる。また、基体とマスキングとの双方に同一の樹脂材を使用することによって、双方の相溶性がより向上し、両者の密着性をより強固にすることができる。   That is, the cycloolefin resin is a cycloolefin copolymer resin in which a linear olefin is copolymerized with a cycloolefin resin and a cycloolefin resin, both of which have a low dielectric loss tangent to a high frequency signal as described above, and Since it has chemical resistance, heat resistance, water resistance, etc., it can be used not only for the substrate but also for both the substrate and masking, compared to using a cycloolefin resin only for the substrate. A circuit board having a low dielectric loss in a high frequency region and excellent durability can be formed. Moreover, by using the same resin material for both the base and the masking, the compatibility of both is further improved, and the adhesion between the two can be further strengthened.

次にシクロオレフィン系樹脂自体は、優れた耐エッチング性を有するため、化学エッチングによって粗化されず、触媒イオンを引き付ける極性基(親水性)を有しない。このため触媒が表面に吸着しない。一方軟質重合体を混合したシクロオレフィン系樹脂は、化学エッチングによってこの軟質重合体が溶解し、容易に表面を粗化することができる。さらにこの粗化された表面自体が、触媒イオンを引き付ける極性基(親水性)を有するため、触媒付与前に極性付与(湿潤化)の工程を設ける必要がない。したがって、軟質重合体を混合したシクロオレフィン系樹脂の部分にのみ、極めて簡易な工程によって、容易に無電解めっきによる導電性回路を形成することができる。   Next, since the cycloolefin resin itself has excellent etching resistance, it is not roughened by chemical etching and does not have a polar group (hydrophilicity) that attracts catalyst ions. For this reason, the catalyst is not adsorbed on the surface. On the other hand, the cycloolefin resin mixed with a soft polymer can be roughened easily by dissolving the soft polymer by chemical etching. Furthermore, since the roughened surface itself has a polar group (hydrophilicity) that attracts catalyst ions, it is not necessary to provide a step of imparting polarity (wetting) before applying the catalyst. Therefore, it is possible to easily form a conductive circuit by electroless plating only in the cycloolefin resin portion mixed with the soft polymer by an extremely simple process.

すなわち本発明による導電性回路の形成方法の第1の特徴は、軟質重合体を混合したシクロオレフィン系樹脂を射出成形して一次基体を形成する第1の工程と、この一次基体に対して相溶性を有する軟質重合体を混合しないシクロオレフィン系樹脂を用いて、この一次基体の表面であって所定の回路パターンからなる導電層を形成すべき部分以外を覆うマスキング層を射出成形して、二次基体を形成する第2の工程とを備えている。また上記マスキング層に覆われていない導電層を形成すべき部分を粗化する第3の工程と、この粗化した導電層を形成すべき部分に無電解めっきによって導電層を形成する第4の工程とを備えている。そして上記第4の工程において、極性付与(湿潤化)工程を省いてあることにある。   That is, the first feature of the method for forming a conductive circuit according to the present invention is that a first step of forming a primary substrate by injection molding a cycloolefin resin mixed with a soft polymer, and a phase corresponding to the primary substrate. Using a cycloolefin resin that is not mixed with a soluble soft polymer, a masking layer that covers the surface of the primary substrate except for a portion where a conductive layer having a predetermined circuit pattern is to be formed is injection-molded. And a second step of forming a next substrate. Further, a third step of roughening a portion where the conductive layer not covered with the masking layer is to be formed, and a fourth step of forming a conductive layer by electroless plating on the portion where the roughened conductive layer is to be formed. Process. In the fourth step, the polarity imparting (wetting) step is omitted.

また上述した手段とは逆に、軟質重合体を混合しないシクロオレフィン系樹脂で一次基体を形成し、この基体の表面上に、軟質重合体を混合したシクロオレフィン系樹脂を射出成形して被めっき層を形成すれば、この被めっき層の表面だけに、選択的に無電解めっき層を形成することができ、上述と同等の特性を備えることができる。そこで本発明による導電性回路の形成方法の第2の特徴は、軟質重合体を混合しないシクロオレフィン系樹脂を射出成形して一次基体を形成する第1の工程と、この一次基体に対して相溶性を有する軟質重合体を混合したシクロオレフィン系樹脂を用いて、この一次基体の表面上であって所定の回路パターンからなる導電層を形成すべき部分に、被めっき層を射出成形して、二次基体を形成する第2の工程とを備えている。また上記被めっき層の表面を粗化する第3の工程と、この粗化した被めっき層の表面に、無電解めっきによって導電層を形成する第4の工程とを備えている。そして上記第4の工程において、極性付与(湿潤化)工程を省いてあることにある。   Contrary to the means described above, a primary substrate is formed from a cycloolefin resin not mixed with a soft polymer, and a cycloolefin resin mixed with a soft polymer is injection-molded on the surface of the substrate to be plated. If a layer is formed, an electroless plating layer can be selectively formed only on the surface of the layer to be plated, and characteristics equivalent to those described above can be provided. Therefore, the second feature of the method for forming a conductive circuit according to the present invention is that a first step of forming a primary substrate by injection molding a cycloolefin resin not mixed with a soft polymer, and a phase with respect to the primary substrate. Using a cycloolefin resin mixed with a soluble soft polymer, a layer to be plated is injection-molded on the surface of the primary substrate where a conductive layer having a predetermined circuit pattern is to be formed, And a second step of forming a secondary substrate. Further, a third step of roughening the surface of the layer to be plated and a fourth step of forming a conductive layer on the roughened surface of the layer to be plated by electroless plating are provided. In the fourth step, the polarity imparting (wetting) step is omitted.

なお上記一次基体は貫通孔を有し、上記被めっき層の一部は、この貫通孔を通じて、この一次基体の一方の表面と他方の表面との両表面に射出成形してあることが望ましい。このように構成することによって、例えば一次基体の表と裏との両面を被めっき層で覆う場合には、一次基体の一方の面側からシクロオレフィン系樹脂を金型に充填すれば足りるため、金型形状の簡易化等を図ることができる。   The primary substrate has a through hole, and it is desirable that a part of the layer to be plated is injection-molded on both the one surface and the other surface of the primary substrate through the through hole. By configuring in this way, for example, when both the front and back surfaces of the primary substrate are covered with the layer to be plated, it is sufficient to fill the mold with the cycloolefin resin from one surface side of the primary substrate. It is possible to simplify the shape of the mold.

また上記導電層を形成する第4の工程の後に、この導電層に電解めっきを積層する第5の工程と、上記軟質重合体を混合しないシクロオレフィン系樹脂の表面に残存する非電導性析出残渣を、化学溶解よって除去する第6の工程を備えるように構成することが望ましい。すなわち無電解めっき層の上に電解めっきすることによって、例えば厚い合金めっきを迅速に積層形成できるため、耐久性や溶接性に優れる導電層回路を形成することができる。また軟質重合体を混合しないシクロオレフィン系樹脂の表面、すなわち導電層を形成すべき部分以外に、触媒やめっきの一部が残存すると、絶縁不良等を生じる恐れがある。したがって化学溶解等によって、これらの残渣を除去することが望ましいが、例えば無電解銅めっきからなる導電層上に電解銅めっきを積層した場合には、残渣を化学溶解する際に、導電層を形成する電解めっき層も減損する場合もある。しかるに電解金めっきを積層した場合には、その下地めっきの銅並びにニッケルの残渣は硝酸で溶解除去でき、一方この金めっきは硝酸では溶解できないため、不要な残渣を選択的に溶解して取り除くことができる。   In addition, after the fourth step of forming the conductive layer, a fifth step of laminating electroplating on the conductive layer, and a nonconductive precipitation residue remaining on the surface of the cycloolefin resin not mixed with the soft polymer It is desirable to comprise the 6th process of removing by chemical dissolution. That is, by electroplating on the electroless plating layer, for example, thick alloy plating can be quickly laminated and formed, so that a conductive layer circuit excellent in durability and weldability can be formed. Further, if a part of the catalyst or plating other than the surface of the cycloolefin-based resin not mixed with the soft polymer, that is, the portion where the conductive layer is to be formed remains, there is a risk of causing insulation failure or the like. Therefore, it is desirable to remove these residues by chemical dissolution or the like. For example, when electrolytic copper plating is laminated on a conductive layer made of electroless copper plating, a conductive layer is formed when the residue is chemically dissolved. In some cases, the electrolytic plating layer to be damaged may also be impaired. However, when electrolytic gold plating is laminated, the copper and nickel residues of the underlying plating can be dissolved and removed with nitric acid, while this gold plating cannot be dissolved with nitric acid, so unnecessary residues can be selectively dissolved and removed. Can do.

そこで本発明では、化学溶解によって、これらの残渣を除去すると共に、無電解めっき層の上に電解めっきすることによって、この化学溶解による侵食に対する余裕厚さを持たせている。   Therefore, in the present invention, these residues are removed by chemical dissolution, and electroplating is performed on the electroless plating layer, thereby providing a marginal thickness against erosion by this chemical dissolution.

さらに上記シクロオレフィン系樹脂は、シクロオレフィン系樹脂と線状オレフィンとからなるシクロオレフィン共重合樹脂であることが望ましい。軟質重合体を混合しないシクロオレフィン共重合樹脂は、透明体であるため、容易に光が透過する。したがって例えば一次基体に、軟質重合体を混合しないシクロオレフィン共重合樹脂を使用すれば、照光、導光、あるいはレンズ等の光学機能等の多機能を兼ね備えた導電性回路を形成することができる。   Furthermore, the cycloolefin resin is preferably a cycloolefin copolymer resin composed of a cycloolefin resin and a linear olefin. Since the cycloolefin copolymer resin which does not mix a soft polymer is a transparent body, light is easily transmitted. Therefore, for example, when a cycloolefin copolymer resin not mixed with a soft polymer is used for the primary substrate, a conductive circuit having multiple functions such as illumination, light guide, and optical functions such as a lens can be formed.

ここで「軟質重合体」とは、エッチング液に溶解する素材を意味し、例えば天然ゴム、ポリブタジエン、ポリイソプレン、ポリイソブチレン、ネオプレン、ポリスルフィドゴム、チオコールゴム、アクリルゴム、ウレタンゴム、シリコーンゴム、エピクロロヒドリンゴム、スチレン−ブタジエンブロック共重合体、水素添加スチレン−ブタジエンブロック共重合体(SEB)、スチレン−ブタジエン−スチレンブロック共重合体(SBS)、水素添加スチレン−ブタジエン−スチレンブロック共重合体(SEBS)、スチレン−イソプレンブロック共重合体、水素添加スチレン−イソプレンブロック共重合体(SEP)、スチレン−イソプレン−スチレンブロック共重合体(SIS)、水素添加スチレン−イソプレン−スチレンブロック共重合体(SEPS)、またはエチレンプロピレンゴム(EPM)、エチレンプロピレンジエンゴム(EPDM)、エチレン−ブテン共重合体、エチレン−オクテン共重合体、直鎖状低密度ポリエチレン系エラストマー等のオレフィン系ゴム、あるいはブタジエン−アクリロニトリル−スチレン−コアシェルゴム(ABS)、メチルメタクリレート−ブタジエン−スチレン−コアシェルゴム(MBS)、メチルメタクリレート−ブチルアクリレート−スチレン−コアシェルゴム(MAS)、オクチルアクリレート−ブタジエン−スチレン−コアシェルゴム(MABS)、アルキルアクリレート−ブタジエン−アクリロニトリル−スチレン−コアシェルゴム(AABS)、ブタジエン−スチレン−コアシェルゴム、メチルメタクリレート−ブチルアクリレート−シロキサンのようなシロキサン含有コアシェルゴム等のコアシェルタイプの粒子状弾性体、またはこれらを変性したゴム等が該当する。   Here, the “soft polymer” means a material that dissolves in the etching solution, such as natural rubber, polybutadiene, polyisoprene, polyisobutylene, neoprene, polysulfide rubber, thiocol rubber, acrylic rubber, urethane rubber, silicone rubber, epichloroform. Hydrin rubber, styrene-butadiene block copolymer, hydrogenated styrene-butadiene block copolymer (SEB), styrene-butadiene-styrene block copolymer (SBS), hydrogenated styrene-butadiene-styrene block copolymer (SEBS) ), Styrene-isoprene block copolymer, hydrogenated styrene-isoprene block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), hydrogenated styrene-isoprene-styrene block copolymer (SEPS), or ethylene propylene rubber (EPM), ethylene propylene diene rubber (EPDM), ethylene-butene copolymer, ethylene-octene copolymer, olefin rubber such as linear low density polyethylene elastomer, or Butadiene-acrylonitrile-styrene-core shell rubber (ABS), methyl methacrylate-butadiene-styrene-core shell rubber (MBS), methyl methacrylate-butyl acrylate-styrene-core shell rubber (MAS), octyl acrylate-butadiene-styrene-core shell rubber (MABS) ), Alkyl acrylate-butadiene-acrylonitrile-styrene-core shell rubber (AABS), butadiene-styrene-core shell rubber, methyl methacrylate-butyla Relate - core shell type particulate elastic body siloxane-containing core shell rubber such as siloxane, or rubber obtained by modifying them corresponds.

「シクロオレフィン系樹脂」とは、例えばシクロオレフィン系単量体とエチレンとの付加重合体、シクロオレフィン系単量体の付加重合体、シクロオレフィン系単量体の開環重合体及びその水素化物、芳香族ビニル単量体の重合体の芳香環部分を水素化したもの、芳香族ビニル単量体と共役ジエン単量体とのランダムまたはブロック共重合体の芳香環部分を水素化したもの、及び脂環式ビニル単量体の重合体等の非晶性樹脂が挙げられる。なおここで、シクロオレフィン系単量体とは、シクロペンタジエンとオレフィンとの付加反応等によって得られるシクロオレフィン、ジシクロペンタジエン、及びテトラシクロドデセン等の多環不飽和炭化水素、並びにそれらのアルキル置換体、カルボキシル基、酸無水物基、エポキシ基、アミド基、及びエステル基等の極性基置換体である多環不飽和炭化水素誘導体を意味する。   “Cycloolefin resin” means, for example, an addition polymer of a cycloolefin monomer and ethylene, an addition polymer of a cycloolefin monomer, a ring-opening polymer of a cycloolefin monomer, and a hydride thereof. , Hydrogenated aromatic ring portion of polymer of aromatic vinyl monomer, hydrogenated aromatic ring portion of random or block copolymer of aromatic vinyl monomer and conjugated diene monomer, And amorphous resins such as polymers of alicyclic vinyl monomers. Here, the cycloolefin monomer is a cycloolefin obtained by addition reaction of cyclopentadiene and olefin, dicyclopentadiene, and polycyclic unsaturated hydrocarbons such as tetracyclododecene, and alkyls thereof. It means a polycyclic unsaturated hydrocarbon derivative which is a polar group substituent such as a substituent, a carboxyl group, an acid anhydride group, an epoxy group, an amide group, and an ester group.

「一次基体」とは、その表面に後述する「マスキング層」あるいは「被めっき層」を射出成形することができる部品また部品の部分を意味し、その形状は問わない。また平面的なものに限らず、立体的な回路を形成するものも含む。「所定の回路パターン」とは、後述する無電解めっきによって導電性回路を形成すべき部分を意味し、2次元的なものに限らず、3次元的なものも含む。また一次基体の表面に開口する内部空間の表面に設ける場合も含む。「導電層」とは、後述する無電解めっきによって形成する金属層を意味する。   The “primary substrate” means a part or a part of the part on which a “masking layer” or a “plating layer” to be described later can be injection-molded. Moreover, not only a planar thing but what forms a three-dimensional circuit is also included. The “predetermined circuit pattern” means a portion where a conductive circuit is to be formed by electroless plating described later, and includes not only a two-dimensional pattern but also a three-dimensional pattern. Moreover, the case where it provides in the surface of the internal space opened on the surface of a primary base | substrate is also included. “Conductive layer” means a metal layer formed by electroless plating described later.

「マスキング層」とは、一次基体の表面上であって、所定の部分を除いた部分を覆う被覆層を意味し、最終的には一次基体の表面上に形成した各々の導電性回路を、相互に電気的に絶縁するものを意味する。また「二次基体」とは、一次基体と、この一次基体の表面上に射出成形した「マスキング層」、あるいは後述する「被めっき層」との両方を含む全体を意味する。「粗化」とは、上述した「軟質重合体」を混合して射出成形した一次基体または被めっき層を、エッチング液に浸漬等した場合に、この一次基体または被めっき層の表層に混合分散する「軟質重合体」が選択的に溶解し、溶解除去された欠落部分によって、表面の粗さを増すことを意味する。   The “masking layer” means a coating layer on the surface of the primary substrate that covers a portion excluding a predetermined portion, and finally each conductive circuit formed on the surface of the primary substrate is It means those that are electrically insulated from each other. The “secondary substrate” means the whole including both the primary substrate and a “masking layer” injection-molded on the surface of the primary substrate or a “layer to be plated” described later. “Roughening” refers to mixing and dispersing in the surface of the primary substrate or the layer to be plated when the primary substrate or the layer to be plated, which has been injection molded by mixing the “soft polymer” described above, is immersed in an etching solution. This means that the “soft polymer” is selectively dissolved and the surface roughness is increased by the dissolved and removed missing portions.

「無電解めっき」とは、公知の技術であって、めっき液中の還元剤の酸化分解によって電子が放出され、この遊離電子による還元作用によって、めっき液中の溶解金属を被めっき面に析出するものを意味し、無電解めっきによって導電層を形成する金属としては、銅、ニッケル、コバルト及び錫等が該当する。「極性付与」(湿潤化)」とは、上述したように、触媒の付与面に、表面活性剤等によって、触媒イオンを引き付ける極性基(親水性)を備えさせることを意味する。   “Electroless plating” is a well-known technique in which electrons are released by the oxidative decomposition of the reducing agent in the plating solution, and the dissolved metal in the plating solution is deposited on the surface to be plated by the reducing action of the free electrons. As the metal that forms the conductive layer by electroless plating, copper, nickel, cobalt, tin, and the like are applicable. “Polarization” (wetting) ”means that, as described above, a polar group (hydrophilicity) that attracts catalyst ions with a surfactant or the like is provided on the surface to which the catalyst is applied.

「電解めっき」とは、公知の技術であって、金属イオンを含んだ電解質溶液に電流を通じて、目的の金属を被めっき面上に析出させるものを意味し、本発明においては、無電解めっき層を陰極にして、この無電解めっき層の上に、目的の金属を析出させる。なお電解めっき用の金属としては、例えば銅、ニッケル、クロム、錫、金、銀、白金、インジウム、あるいはこれらを含む合金が該当する。「非電導性析出物」とは、触媒または無電解めっきで析出させた金属を意味し、例えば初期銅めっき(非連続膜)が該当する。   “Electrolytic plating” is a known technique, which means that a target metal is deposited on a surface to be plated by passing an electric current through an electrolytic solution containing metal ions. In the present invention, an electroless plating layer is used. And the target metal is deposited on the electroless plating layer. In addition, as a metal for electrolytic plating, copper, nickel, chromium, tin, gold | metal | money, silver, platinum, indium, or an alloy containing these corresponds, for example. “Non-conductive deposit” means a metal deposited by catalyst or electroless plating, for example, initial copper plating (non-continuous film).

「シクロオレフィン系樹脂」とは、シクロオレフィン類をモノマーとして合成された脂環構造を主鎖に持つポリマーを意味し、その化学構造式の例を図3及び図4に示す。具体的には、図3に示す化学構造式を有するものとして、日本ゼオン株式会社製の「ZEONEX(登録商標)」、同社製の「ZEONOR(登録商標)」、及びJSR株式会社製の「ARTON」等が該当する。またシクロオレフィン系単量体と線状オレフィンの共重合体は、図4に示す化学構造式を有するものとして、Ticona社製「Topas」、及び三井化学株式会社製の「アペル」等が該当する。   “Cycloolefin resin” means a polymer having an alicyclic structure in the main chain synthesized using cycloolefins as monomers, and examples of chemical structural formulas thereof are shown in FIGS. Specifically, those having the chemical structural formula shown in FIG. 3 include “ZEONEX (registered trademark)” manufactured by Zeon Corporation, “ZEONOR (registered trademark)” manufactured by the same company, and “ARTON” manufactured by JSR Corporation. Etc. ”. Moreover, the copolymer of a cycloolefin type monomer and a linear olefin corresponds to “Topas” manufactured by Ticona, “Appel” manufactured by Mitsui Chemicals, etc. as having the chemical structural formula shown in FIG. .

第1に、基体上に形成したマスクを除去する工程を省くことによって、その分コストと回路形成時間とを削減することができる。第2に、基体およびマスク双方について、シクロオレフィン系樹脂を用いることによって、さらに高周波信号に対して誘電正接が低く、かつ耐薬品性、耐熱性、及び耐水性等を有するようにすることができる。第3に、マスク材と基体との間の相溶性をより向上させ、両者の密着性をより強固にすることができる。第4に、無電解めっき用の触媒を付与するための極性付与(湿潤化)工程を省くことによって、その分コストと製造時間とを削減することができる。   First, by omitting the step of removing the mask formed on the substrate, the cost and circuit formation time can be reduced accordingly. Secondly, by using a cycloolefin resin for both the base and the mask, the dielectric loss tangent can be further reduced with respect to the high-frequency signal, and chemical resistance, heat resistance, water resistance, etc. can be achieved. . Thirdly, the compatibility between the mask material and the substrate can be further improved, and the adhesion between them can be further strengthened. Fourthly, by omitting the polarity imparting (wetting) step for imparting the electroless plating catalyst, the cost and the production time can be reduced accordingly.

第5に、無電解めっきに電解めっきを積層することによって、耐久性と溶接性を向上させた導電性回路を形成することができる。さらにこの電解めっきの積層によって、導電層に対する過剰な侵食を防止しつつ、化学溶解を用いて、導電層を形成すべき部分以外に残存する触媒等の残渣を除去することができる。また一次基体に貫通孔を設けることによって、金型形状の簡易化等を図ることができる。さらに、例えば一次基体に、軟質重合体を混合しないシクロオレフィン共重合樹脂を使用することによって、光学機能を兼ね備えた多機能品を形成することができる。   Fifth, by laminating electroplating on electroless plating, a conductive circuit with improved durability and weldability can be formed. Furthermore, by this electrolytic plating lamination, it is possible to remove residues such as catalyst remaining other than the portion where the conductive layer is to be formed by using chemical dissolution while preventing excessive erosion to the conductive layer. Further, by providing a through hole in the primary substrate, the mold shape can be simplified. Furthermore, for example, by using a cycloolefin copolymer resin in which a soft polymer is not mixed in the primary substrate, a multifunction product having an optical function can be formed.

図1を参照しつつ、本発明による導電性回路の形成方法の実施の形態を説明する。まず図1(A)に示すように、シクロオレフィン系樹脂の1である、シクロオレフィン環状系樹脂と線状オレフィンとからなるシクロオレフィン共重合樹脂に、軟質重合体の1であるスチレン―エチレン―プロピレン―スチレンブロック共重合体エラストマー(以下「SESP」という。)を20重量%、混合拡散した材料を射出成形して、ブロック状の一次基体1を形成する。次に一次基体1を洗浄脱脂して、汚れや油成分を除去して乾燥した上で、図1(B)に示すように、この一次基体1に対して相溶性を有する、軟質重合体を混合しないシクロオレフィン系樹脂と線状オレフィンとからなるシクロオレフィン共重合樹脂を用いて、この一次基体の表面であって所定の回路パターンからなる導電層を形成すべき部分1a以外1bを覆うマスキング層2を射出成形して二次基体3を形成する。   An embodiment of a method for forming a conductive circuit according to the present invention will be described with reference to FIG. First, as shown in FIG. 1A, a cycloolefin copolymer resin composed of a cycloolefin cyclic resin and a linear olefin, which is a cycloolefin resin 1, is added to a styrene-ethylene-polymer 1 as a soft polymer. A block-shaped primary substrate 1 is formed by injection molding a material obtained by mixing and diffusing 20% by weight of a propylene-styrene block copolymer elastomer (hereinafter referred to as “SESP”). Next, after washing and degreasing the primary substrate 1, removing dirt and oil components and drying, a soft polymer having compatibility with the primary substrate 1 is obtained as shown in FIG. Using a cycloolefin copolymer resin composed of a non-mixed cycloolefin resin and a linear olefin, a masking layer covering the surface of the primary substrate and covering a portion 1b other than the portion 1a on which a conductive layer having a predetermined circuit pattern is to be formed 2 is injection molded to form the secondary substrate 3.

次に二次基体3を洗浄し脱脂して(C)、乾燥した上でエッチング液に浸漬し、図1(D)に示すように、一次基体1のマスキング層2で覆われていない導電層を形成すべき部分1aについて、混合分散させたSEPSを溶解し、この部分の表面を粗化する。なお
マスキング層2自体は耐エッチング性を有するため、エッチング液に浸漬しても粗化されず、疎水性が維持される。ここでエッチング液には、例えば無水クロム酸400g/リットルと、硫酸200ミリリットル/リットルとの混酸溶液を使用し、温度75℃で60分間浸漬する。
Next, the secondary substrate 3 is washed and degreased (C), dried and dipped in an etching solution, and as shown in FIG. 1D, a conductive layer not covered with the masking layer 2 of the primary substrate 1 For the portion 1a to be formed, the mixed and dispersed SEPS is dissolved, and the surface of this portion is roughened. In addition, since the masking layer 2 itself has etching resistance, it is not roughened even when immersed in an etching solution, and maintains hydrophobicity. Here, as the etching solution, for example, a mixed acid solution of 400 g / liter of chromic anhydride and 200 ml / liter of sulfuric acid is used and immersed for 60 minutes at a temperature of 75 ° C.

次に二次基体3をアルカリ水溶液で中和し(E)、洗浄乾燥させた上で、触媒付与液に浸漬させて、塩化パラジウムを一次基体1のマスキング層2で覆われていない導電層を形成すべき部分1aに吸着させる(F)。なお一次基体1のマスキング層2で覆われていない導電層を形成すべき部分1aは、上述した工程(D)において、エッチング液によって粗化されると共に、極性付与(湿潤化)されているため、塩化パラジウムが容易かつ強固に吸着する。一方マスキング層2自体は、上述したように、エッチング液によって粗化されず、かつ疎水性であるため、塩化パラジウムは吸着しない。よって導電層を形成すべき部分1aにのみ、塩化パラジウムが選択的に吸着する。次に活性化処理剤を用いて、吸着した塩化パラジウムを還元して、金属パラジウムからなる触媒核を形成する(G)。   Next, the secondary substrate 3 is neutralized with an alkaline aqueous solution (E), washed and dried, then immersed in a catalyst-providing solution, and a conductive layer in which palladium chloride is not covered with the masking layer 2 of the primary substrate 1 is formed. Adsorb to the portion 1a to be formed (F). In addition, since the part 1a which should form the conductive layer which is not covered with the masking layer 2 of the primary base | substrate 1 is roughened by the etching liquid in the process (D) mentioned above, and polarity is provided (wet). Palladium chloride is easily and strongly adsorbed. On the other hand, as described above, the masking layer 2 itself is not roughened by the etching solution and is hydrophobic, so that palladium chloride does not adsorb. Therefore, palladium chloride is selectively adsorbed only on the portion 1a where the conductive layer is to be formed. Next, using the activation treatment agent, the adsorbed palladium chloride is reduced to form a catalyst nucleus made of metallic palladium (G).

次に二次基体3を水洗して、無電解銅めっき液に浸漬し、一次基体1の表面に、無電解銅めっきからなる導電層4を選択的に形成する(H)。なお無電解銅めっき液としては、プラスチック材へ適用できる一般的なものを使用すればよく、例えば金属塩として硫酸銅を5〜15g/リットル、還元剤としてホルマリンの37容量%の溶液を8〜12mリットル/リットル、錯化剤としてロッシェル塩を20〜25g/リットル、そしてアルカリ剤として水酸化ナトリウムを5〜12g/リットル混合した、温度20℃の溶液を使用することができる。この無電解銅めっきからなる導電層4は、マスキング層2で覆われていない一次基体1の表面であって、粗化され、触媒核を付与された導電層を形成すべき部分1aにのみ形成され、粗化および触媒核を付与されていない、このマスキング層には形成されない。したがって、一次基体1の表面上であって所定の回路パターンからなる導電層を形成すべき部分1aにのみ、選択的に導電層4が形成される。   Next, the secondary substrate 3 is washed with water and immersed in an electroless copper plating solution, and a conductive layer 4 made of electroless copper plating is selectively formed on the surface of the primary substrate 1 (H). In addition, what is necessary is just to use the general thing applicable to a plastic material as an electroless copper plating solution, for example, 5-15 g / liter of copper sulfate is used as a metal salt, and 8 volume of a 37 volume% solution of formalin is used as a reducing agent. A solution having a temperature of 20 ° C. mixed with 12 ml / liter, 20-25 g / liter of Rochelle salt as a complexing agent, and 5-12 g / liter of sodium hydroxide as an alkaline agent can be used. The conductive layer 4 made of electroless copper plating is formed only on the surface 1a of the primary substrate 1 that is not covered with the masking layer 2 and on which the conductive layer to be roughened and provided with catalyst nuclei is to be formed. Is not formed in this masking layer, which has not been roughened and provided with catalyst nuclei. Therefore, the conductive layer 4 is selectively formed only on the portion 1a on the surface of the primary substrate 1 where the conductive layer having a predetermined circuit pattern is to be formed.

次に無電解銅めっき液を水洗して除去し、導電層4を陰極にして、この表面に電解銅めっき5を積層する(I)。なお電解銅めっきは、一般的なものを使用すればよく、さらに必要に応じて、この電解銅めっき5の上に、電解ニッケルめっき、および電解金めっき層等を形成してもよい。   Next, the electroless copper plating solution is removed by washing with water, and the electrolytic layer 4 is laminated on the surface using the conductive layer 4 as a cathode (I). In addition, what is necessary is just to use a general thing for electrolytic copper plating, and you may form electrolytic nickel plating, an electrolytic gold plating layer, etc. on this electrolytic copper plating 5 as needed.

ところでマスキング層2の表面に触媒やめっきの一部が残存すると、絶縁不良等を生じる恐れがある。そこで電解銅めっき5(I)を行った後の二次基体3を、硝酸液等で化学溶解し、これらの残存する触媒やめっきの一部を除去する(J)。なおここで、無電解銅めっき4に積層する電解銅めっき5の厚さをある程度厚くしておけば、最終仕上がりが銅であっても、この化学溶解による侵食に対する余裕厚さがあるため、導電性回路の機能が損なわれることはない。また電解銅めっき5の上に金めっき行なうことによって、この化学溶解による侵食を防止することもできる。最後にアルカリ水溶液等によって、この硝酸液等を中和する(K)。   By the way, if a part of the catalyst or plating remains on the surface of the masking layer 2, there is a risk of causing an insulation failure. Therefore, the secondary substrate 3 after the electrolytic copper plating 5 (I) is chemically dissolved with a nitric acid solution or the like to remove a part of these remaining catalyst and plating (J). Here, if the thickness of the electrolytic copper plating 5 laminated on the electroless copper plating 4 is increased to some extent, even if the final finish is copper, there is a marginal thickness against this erosion due to chemical dissolution. The function of the circuit is not impaired. Further, by performing gold plating on the electrolytic copper plating 5, it is possible to prevent erosion due to this chemical dissolution. Finally, the nitric acid solution and the like are neutralized with an aqueous alkaline solution (K).

さて次に、図2を参照しつつ他の実施の形態を説明する。なおこの実施の形態は、上述した一次基体1と、マスキング層2とに使用する材料を逆にしたものである。また図1に示す部品や部分に相当するものについては、便宜上、図1に示す部品番号に一律10を加えた番号にしてある。さて図2の(A)に示すように、軟質重合体を混合しないシクロオレフィン系樹脂の1である、シクロオレフィン系樹脂と線状オレフィンとからなるシクロオレフィン共重合樹脂を射出成形して、ブロック状の一次基体11を形成する。   Next, another embodiment will be described with reference to FIG. In this embodiment, the materials used for the primary substrate 1 and the masking layer 2 described above are reversed. Further, for the sake of convenience, the parts and parts corresponding to the parts and parts shown in FIG. 1 are numbered by adding 10 to the part numbers shown in FIG. Now, as shown in FIG. 2 (A), a cycloolefin copolymer resin composed of a cycloolefin resin and a linear olefin, which is one of the cycloolefin resins not mixed with a soft polymer, is injection-molded to form a block. A primary substrate 11 is formed.

次に一次基体11を洗浄脱脂して、汚れや油成分を除去して乾燥した上で、図2(B)に示すように、この一次基体11に対して相溶性を有する、軟質重合体を混合したシクロオレフィン系樹脂と線状オレフィンからなるシクロオレフィン共重合樹脂を用いて、この一次基体の表面であって、所定の回路パターンからなる導電層を形成すべき部分に、被めっき層12を射出成形して、二次基体13を形成する。なおここで軟質重合体は、上述したものと同様に、SESPを20重量%混合拡散する。   Next, the primary substrate 11 is washed and degreased to remove dirt and oil components and dried. As shown in FIG. 2B, a soft polymer having compatibility with the primary substrate 11 is obtained. Using the mixed cycloolefin resin and cycloolefin copolymer resin composed of linear olefin, the layer 12 to be plated is formed on the surface of the primary substrate where a conductive layer having a predetermined circuit pattern is to be formed. The secondary substrate 13 is formed by injection molding. Here, the soft polymer mixes and diffuses 20% by weight of SESP in the same manner as described above.

次に二次基体13を洗浄し脱脂して(C)、乾燥した上でエッチング液に浸漬し、図2(D)に示すように、被めっき層12の表面12aについて、混合分散させたSEPSを溶解し、この部分の表面を粗化する。なお一次基体11の表面であって、被めっき層12で覆われていない部分11bは、耐エッチング性を有するため、エッチング液に浸漬しても粗化されず、疎水性が維持される。ここでエッチング液には、上述と同様なものを使用する。   Next, the secondary substrate 13 is washed and degreased (C), dried and dipped in an etching solution. As shown in FIG. 2D, the surface 12a of the layer 12 to be plated is mixed and dispersed. And the surface of this part is roughened. Note that the portion 11b that is the surface of the primary substrate 11 and is not covered with the layer 12 to be plated has etching resistance, so that it is not roughened even when immersed in an etching solution and maintains hydrophobicity. Here, the same etchant as described above is used.

次に二次基体13をアルカリ水溶液で中和し(E)、洗浄乾燥させた上で、触媒付与液に浸漬させて、被めっき層12に、塩化パラジウムを吸着させる(F)。なお被めっき層12の表面12aは、上述した工程(D)において、エッチング液によって粗化されると共に、極性付与(湿潤化)されているため、塩化パラジウムが容易かつ強固に吸着する。一方一次基体11自体は、上述したように、エッチング液によって粗化されず、かつ疎水性であるため、塩化パラジウムは吸着しない。よって導電層を形成すべき部分である被めっき層12にのみ、塩化パラジウムが選択的に吸着する。次に活性化処理剤を用いて、吸着した塩化パラジウムを還元して、金属パラジウムからなる触媒核を形成する(G)。   Next, the secondary substrate 13 is neutralized with an aqueous alkaline solution (E), washed and dried, and then immersed in a catalyst-providing solution to adsorb palladium chloride on the plated layer 12 (F). In addition, since the surface 12a of the to-be-plated layer 12 is roughened by the etching solution and imparted with polarity (wet) in the step (D), palladium chloride is easily and firmly adsorbed. On the other hand, as described above, the primary substrate 11 itself is not roughened by the etching solution and is hydrophobic, so that palladium chloride does not adsorb. Therefore, palladium chloride is selectively adsorbed only on the layer to be plated 12 which is a portion where the conductive layer is to be formed. Next, using the activation treatment agent, the adsorbed palladium chloride is reduced to form a catalyst nucleus made of metallic palladium (G).

次に二次基体13を水洗して、無電解銅めっき液に浸漬して、被めっき層12の表面12aに、無電解銅めっきからなる導電層14を形成する(H)。なお無電解銅めっき液は、上述と同様なものを使用する。この無電解銅めっきからなる導電層14は、粗化され、触媒核を付与された被めっき層12の表面12aにのみ形成され、一方粗化および触媒核を付与されていない、一次基体11の表面11bには形成されない。したがって、一次基体11の表面上であって所定の回路パターンからなる被めっき層12の表面12aにのみ、選択的に導電層14が形成される。   Next, the secondary substrate 13 is washed with water and immersed in an electroless copper plating solution to form a conductive layer 14 made of electroless copper plating on the surface 12a of the layer to be plated 12 (H). The electroless copper plating solution is the same as described above. The electroconductive layer 14 made of electroless copper plating is formed only on the surface 12a of the layer 12 to be plated which has been roughened and provided with catalyst nuclei, while the surface of the primary substrate 11 which has not been provided with roughening and catalyst nuclei. It is not formed on the surface 11b. Therefore, the conductive layer 14 is selectively formed only on the surface 12a of the layer 12 to be plated having a predetermined circuit pattern on the surface of the primary substrate 11.

次に無電解銅めっき液を水洗して除去し、導電層14を陰極にして、この表面に電解銅めっき15を積層する(I)。なお電解銅めっきは、一般的なものを使用すればよく、さらに必要に応じて、電解銅めっき15の上に、電解ニッケルめっき、および電解金めっき層等を形成してもよい。   Next, the electroless copper plating solution is removed by washing with water, and the electrolytic layer 14 is laminated on the surface using the conductive layer 14 as a cathode (I). In addition, what is necessary is just to use a general thing for electrolytic copper plating, Furthermore, electrolytic nickel plating, an electrolytic gold plating layer, etc. may be formed on the electrolytic copper plating 15 as needed.

次に電解銅めっき15を行った(I)後の二次基体13を、硝酸液等で化学溶解し、これらの残存する触媒やめっきの一部を、除去する(J)。なおここで、無電解銅めっき14に積層する電解銅めっき15の厚さをある程度厚くしておけば、最終仕上がりが銅であってもこのエッチングによる侵食に対する余裕厚さがあるため、導電性回路の機能が損なわれることはない。また電解銅めっき15の上に金めっき行なうことによって、この化学溶解による侵食を防止することもできる。最後にアルカリ水溶液等によって、この硝酸液等を中和する(K)。   Next, the secondary substrate 13 after the electrolytic copper plating 15 (I) is chemically dissolved with a nitric acid solution or the like, and the remaining catalyst and part of the plating are removed (J). Here, if the thickness of the electrolytic copper plating 15 laminated on the electroless copper plating 14 is increased to some extent, even if the final finish is copper, there is a marginal thickness against erosion by this etching. The function of is not impaired. Further, by performing gold plating on the electrolytic copper plating 15, it is possible to prevent erosion due to this chemical dissolution. Finally, the nitric acid solution and the like are neutralized with an aqueous alkaline solution (K).

なお上述した一次基体1,11、並びにマスキング層2及び被めっき層12に使用するシクロオレフィン系樹脂には、一次基体1,11、並びにマスキング層2及び被めっき層12には、ガラス繊維、チタン酸バリュウムウイスカー等の充填材を混合することによって、誘電率の変更・強度や耐久性等を向上させることができる。さらにこれらにアンチブロッキング剤、酸化防止剤、核剤、帯電防止剤、プロセスオイル、可塑剤、離型剤、相溶化剤,難燃剤、難燃助剤、あるいは顔料等の添加剤を混合することによって、それぞれの添加剤の機能効果を発揮させることもできる。   The cycloolefin resin used for the primary bases 1 and 11 and the masking layer 2 and the plated layer 12 described above includes glass fiber, titanium for the primary bases 1 and 11 and the masking layer 2 and the plated layer 12. By mixing a filler such as acid barium whisker, the change in dielectric constant, strength, durability, and the like can be improved. Furthermore, additives such as anti-blocking agents, antioxidants, nucleating agents, antistatic agents, process oils, plasticizers, mold release agents, compatibilizers, flame retardants, flame retardant aids, or pigments are mixed with these. Thus, the functional effects of the respective additives can be exhibited.

軟質重合体を混合したシクロオレフィン系樹脂として、「日本ゼオン(株)製のZEONEX #RS820、Tg:約140℃、水素添加率:99.7%以上、金属元素量:1ppm以下」100部に対して、スチレン−エチレン−プロピレン−スチレンブロック共重合体エラストマー「クラレ(株)製のセプトン 数平均分子量:60000、Tg:少なくとも40℃以下に1点あり、金属元素量:15ppm」30部、およびフェノール系酸化防止剤0.5部を添加して、熱可塑性組成物のペレットを得た。このペレットを樹脂温度280℃で射出成形して、ブロック状の一次基体を形成した。   As a cycloolefin resin mixed with a soft polymer, “ZEONEX # RS820 manufactured by Nippon Zeon Co., Ltd., Tg: about 140 ° C., hydrogenation rate: 99.7% or more, metal element amount: 1 ppm or less” in 100 parts In contrast, a styrene-ethylene-propylene-styrene block copolymer elastomer “Kuraray Co., Ltd. Septon number average molecular weight: 60000, Tg: at least one point at 40 ° C. or less, metal element amount: 15 ppm”, 30 parts, and 0.5 parts of phenolic antioxidant was added to obtain thermoplastic composition pellets. The pellet was injection molded at a resin temperature of 280 ° C. to form a block-shaped primary substrate.

次に一次基体を洗浄脱脂して、汚れや油成分を除去して乾燥した上で、軟質重合体を混合しない上記シクロオレフィン系樹脂「日本ゼオン(株)製のZEONEX #480」を用いて、この一次基体の表面であって、所定の回路パターンからなる導電層を形成すべき部分以外を覆おうマスキング層を射出成形して、二次基体を形成した。そして二次基体を洗浄脱脂して乾燥した上、エッチング液に浸漬して、上記マスキング層で覆われていない一次基体の表面を粗化した。このエッチング液としては、無水クロム酸400g/リットルと硫酸200ミリリットル/リットルとの混合溶液を用い、温度:75℃で60分浸漬した。その結果、マスキング層で覆われていない一次基体の表面のみ粗化、及び湿潤化され、マスキング層は、粗化及び湿潤化されなかった。   Next, after cleaning and degreasing the primary substrate, removing dirt and oil components and drying, using the above cycloolefin-based resin “ZEONEX # 480 manufactured by Nippon Zeon Co., Ltd.” not mixed with a soft polymer, A secondary substrate was formed by injection molding a masking layer covering the surface of the primary substrate except for a portion where a conductive layer having a predetermined circuit pattern was to be formed. The secondary substrate was washed and degreased and dried, and then immersed in an etching solution to roughen the surface of the primary substrate not covered with the masking layer. As this etching solution, a mixed solution of 400 g / liter of chromic anhydride and 200 ml / liter of sulfuric acid was used, and immersed at a temperature of 75 ° C. for 60 minutes. As a result, only the surface of the primary substrate not covered with the masking layer was roughened and wetted, and the masking layer was not roughened or wetted.

次に二次基体を中和して洗浄乾燥させた。なおこの中和剤として「シプレイ・ファーイースト(株)製のニュートライザー PM50」を用い、温度50℃で3〜5分間浸漬した。次に二次基体を触媒付与液に浸漬させて、マスキング層で覆われていない一次基体の表面に塩化パラジウムを吸着させた。この触媒付与は、「シプレイ・ファーイースト(株)製のキャタポジェット44」を用い、温度50℃で8〜10分間浸漬させた。この結果、マスキング層で覆われていない粗化された一次基体の表面には、別途湿潤化を行なわなくても塩化パラジウムが吸着することが確認された。またマスキング層には吸着されないことも確認した。そしてこの吸着した塩化パラジウムを活性化して、パラジウム金属からなる触媒核を形成した。なおこの活性化は、「シプレイ・ファーイースト(株)製のアクセラーター19」を用い、室温にて10〜12分間浸漬した。   Next, the secondary substrate was neutralized and washed and dried. In addition, "Neutlyzer PM50 manufactured by Shipley Far East Co., Ltd." was used as this neutralizing agent, and immersed for 3 to 5 minutes at a temperature of 50 ° C. Next, the secondary substrate was immersed in a catalyst-providing solution to adsorb palladium chloride on the surface of the primary substrate that was not covered with the masking layer. For this catalyst application, “Catapo Jet 44 manufactured by Shipley Far East Co., Ltd.” was used and immersed at a temperature of 50 ° C. for 8 to 10 minutes. As a result, it was confirmed that palladium chloride was adsorbed on the surface of the rough primary substrate which was not covered with the masking layer without further wetting. It was also confirmed that it was not adsorbed by the masking layer. The adsorbed palladium chloride was activated to form a catalyst nucleus made of palladium metal. In this activation, “Accelerator 19 manufactured by Shipley Far East Co., Ltd.” was used and immersed for 10 to 12 minutes at room temperature.

次に二次基体を水洗して、無電解銅めっき液に浸漬して、触媒核を形成した一次基体の表面に、無電解銅めっきからなる厚さ0.05〜0.3μmの導電層を選択的に形成した。なお無電解銅めっき液としては、「シプレイ・ファーイースト(株)製のカッパーミックス#328L:12.5%、同#238A:12.5%、および同#328C:2.5%」を水72.5%に混合した液を用い、室温にて15分間浸漬させた。以上により、マスキング層で覆われていない粗化・触媒付与された一次基体の表面のみ、無電解銅めっきによる導電性回路が選択的に形成できることを確認した。   Next, the secondary substrate is washed with water and immersed in an electroless copper plating solution, and a 0.05 to 0.3 μm thick conductive layer made of electroless copper plating is selectively formed on the surface of the primary substrate on which catalyst nuclei are formed. Formed. As an electroless copper plating solution, “Copper mix # 328L: 12.5%, # 238A: 12.5%, and # 328C: 2.5% manufactured by Shipley Far East Co., Ltd.” The solution mixed at 72.5% was immersed for 15 minutes at room temperature. From the above, it was confirmed that a conductive circuit by electroless copper plating can be selectively formed only on the surface of the roughened / catalyzed primary substrate not covered with the masking layer.

軟質重合体を混合した、シクロオレフィン系樹脂および線状オレフィンから成るシクロオレフィン共重合樹脂として、「ポリプラスチックス(株)製のTOPAS #RSC10001」を、上述と同様にして射出成形して一次基体を形成した。次に一次基体の表面の汚れやごみ等を脱脂・除去して、この一次基体に対し相溶性のある、軟質重合体を混合しないシクロオレフィン系樹脂として「日本ゼオン(株)製のZEONOR #1020R」を用いて、この一次基体の表面であって所定の回路パターンからなる導電層を形成すべき部分以外を覆うマスキング層を射出成形して二次基体を形成した。   As a cycloolefin copolymer resin composed of a cycloolefin resin and a linear olefin mixed with a soft polymer, "TOPAS # RSC10001 manufactured by Polyplastics Co., Ltd." Formed. Next, dirt and dust on the surface of the primary substrate are degreased and removed, and as a cycloolefin resin compatible with the primary substrate and not mixed with a soft polymer, “ZEONOR # 1020R manufactured by Nippon Zeon Co., Ltd.” Is used to form a secondary substrate by injection molding a masking layer covering the surface of the primary substrate except for the portion where the conductive layer having a predetermined circuit pattern is to be formed.

次に二次基体を洗浄脱脂して乾燥した上、クロム酸−硫酸の混酸液からなるエッチング液に浸漬して、上記マスキング層で覆われていない一次基体の表面を粗化した。次に塩酸溶液にて、二次基体に付着するクロム酸を中和・除去して、上述と同様にして、粗化した一次基体の表面に塩化パラジウムを付着した後に、この塩化パラジウムを還元して、パラジウム金属からなる触媒核を形成した。次にこの二次基体に対して、ABS樹脂への標準無電解銅めっきを行った。その結果、上記マスキング層で覆われていない一次基体の表面であって、粗化され触媒を付与された部分にのみ、無電解銅めっきからなる導電層が形成され、このマスキング層には、無電解銅めっきが形成されないことを確認した。   Next, the secondary substrate was washed and degreased and dried, and then immersed in an etching solution comprising a mixed acid solution of chromic acid-sulfuric acid to roughen the surface of the primary substrate not covered with the masking layer. Next, neutralize and remove the chromic acid adhering to the secondary substrate with a hydrochloric acid solution, and deposit palladium chloride on the surface of the roughened primary substrate in the same manner as described above, and then reduce the palladium chloride. Thus, a catalyst nucleus made of palladium metal was formed. Next, standard electroless copper plating on ABS resin was performed on the secondary substrate. As a result, a conductive layer made of electroless copper plating is formed only on the surface of the primary substrate that is not covered with the masking layer and is roughened and provided with a catalyst. It was confirmed that no electrolytic copper plating was formed.

実施例2とは逆に、軟質重合体を混合しないシクロオレフィン系樹脂として「日本ゼオン(株)製のZEONOR #1020R」を用いて一次基体を射出成形し、次いでこの一次基体に対して相溶性のある、軟質重合体を混合したシクロオレフィン系樹脂および線状オレフィンから成るシクロオレフィン共重合樹脂として「ポリプラスチックス(株)製のTOPAS #RSC10001」用いて、この一次基体の表面上であって導電層を形成すべき部分に、被めっき層を射出成形して二次基体を形成した。   Contrary to Example 2, a primary substrate was injection molded using “ZEONOR # 1020R manufactured by Nippon Zeon Co., Ltd.” as a cycloolefin resin not mixed with a soft polymer, and then compatible with the primary substrate. As a cycloolefin copolymer resin composed of a cycloolefin resin mixed with a soft polymer and a linear olefin, “TOPAS # RSC10001 manufactured by Polyplastics Co., Ltd.” is used. A layer to be plated was injection molded at a portion where a conductive layer was to be formed to form a secondary substrate.

次いで、上述と同様な手順にて、二次基体をエッチング液、触媒付与液、および無電解めっき液に浸漬した。その結果、被めっき層のみが粗化されると共に触媒が付与され、この被めっき層で覆われていない一次基体の表面は、粗化及び触媒付与がされず、この被めっき層のみに、無電解めっき層が選択的に形成できることを確認した。   Subsequently, the secondary substrate was immersed in an etching solution, a catalyst applying solution, and an electroless plating solution in the same procedure as described above. As a result, only the layer to be plated is roughened and a catalyst is applied, and the surface of the primary substrate that is not covered with the layer to be plated is not roughened and no catalyst is applied. It was confirmed that the electrolytic plating layer can be selectively formed.

上述した実施例3と同様にして、一次基体の表面に射出成形した被めっき層に、無電解めっき層を選択的に形成した。そして無電解めっき液を水洗し除去した上で、この無電解めっき層を陰極として、その表面に厚さ5〜10μmの電解銅めっきを積層した。その結果、一般的に使用されている電解銅めっき方法によって、無電解めっき層にのみ、電解銅めっきが迅速に積層できることを確認した。   In the same manner as in Example 3 described above, an electroless plating layer was selectively formed on the plated layer that was injection-molded on the surface of the primary substrate. Then, the electroless plating solution was washed away with water, and the electroless plating layer was used as a cathode, and an electrolytic copper plating having a thickness of 5 to 10 μm was laminated on the surface. As a result, it was confirmed that the electrolytic copper plating can be quickly laminated only on the electroless plating layer by a commonly used electrolytic copper plating method.

次に電解銅めっきの積層後に、二次基体全体を硫酸液で化学溶解した。その結果、電解銅めっきは、この化学溶解による侵食に対して十分な余裕厚さを有し、導電層の機能が損なわれることはないことを確認した。したがって、被めっき層で覆われていない一次基体の表面に、触媒やめっきの一部が残存する恐れがある場合には、電解銅めっきに対するオーバーエッチングを生じさせることなく、これらを十分除去することができる。   Next, after the electrolytic copper plating was laminated, the entire secondary substrate was chemically dissolved with a sulfuric acid solution. As a result, it was confirmed that the electrolytic copper plating had a sufficient thickness against the erosion due to this chemical dissolution, and the function of the conductive layer was not impaired. Therefore, if there is a possibility that a part of the catalyst or plating remains on the surface of the primary substrate that is not covered with the layer to be plated, remove these sufficiently without causing overetching of the electrolytic copper plating. Can do.

本発明による導電性回路の形成方法は、基体上に形成したマスクを除去する必要がなく、基体およびマスク双方が高周波信号に対して誘電正接が低く、かつマスク材と基体との間の相溶性が高く、さらに無電解めっき用の触媒を付与するための極性付与(湿潤化)が不要であるため、電子機器等に関する産業に広く利用可能である。   The method for forming a conductive circuit according to the present invention does not require removal of a mask formed on a substrate, both the substrate and the mask have a low dielectric loss tangent to a high frequency signal, and the compatibility between the mask material and the substrate. In addition, since polarity imparting (wetting) for imparting a catalyst for electroless plating is unnecessary, it can be widely used in industries related to electronic devices and the like.

導電性回路の形成手順を示す工程図である。It is process drawing which shows the formation procedure of an electroconductive circuit. 導電性回路の他の形成手順を示す工程図である。It is process drawing which shows the other formation procedure of an electroconductive circuit. シクロオレフィン系樹脂の具体例を示す化学構造式である。It is a chemical structural formula showing a specific example of a cycloolefin-based resin. シクロオレフィン単量体と線状オレフィン共重合体の具体例を示す化学構造式である。2 is a chemical structural formula showing a specific example of a cycloolefin monomer and a linear olefin copolymer.

符号の説明Explanation of symbols

1,11 一次基体
1a 導電層を形成すべき部分
1b 導電層を形成すべき部分以外(マスキング層で覆われた部分)
12 被めっき層
2 マスキング層
3,13 二次基体
4,14 無電解めっき(導電層)
5,15 電解銅めっき
1,11 Primary substrate 1a Part where conductive layer is to be formed 1b Except part where conductive layer is to be formed (part covered with masking layer)
12 Layer to be plated 2 Masking layer 3,13 Secondary substrate 4,14 Electroless plating (conductive layer)
5,15 Electrolytic copper plating

Claims (5)

軟質重合体を混合したシクロオレフィン系樹脂を射出成形して一次基体を形成する第1の工程と、
上記一次基体に対して相溶性を有する、軟質重合体を混合しないシクロオレフィン系樹脂を用いて、この一次基体の表面であって所定の回路パターンからなる導電層を形成すべき部分以外を覆うマスキング層を射出成形して二次基体を形成する第2の工程と、
上記マスキング層に覆われていない導電層を形成すべき部分を粗化する第3の工程と、
上記粗化した導電層を形成すべき部分に無電解めっきによって導電層を形成する第4の工程とを備え、
上記第4の工程において、極性付与(湿潤化)工程を省いてある
ことを特徴とする導電性回路の形成方法。
A first step of forming a primary substrate by injection molding a cycloolefin-based resin mixed with a soft polymer;
Using a cycloolefin resin that is compatible with the primary substrate and does not mix a soft polymer, masking covers the surface of the primary substrate except for the portion where a conductive layer having a predetermined circuit pattern is to be formed. A second step of injection molding the layer to form a secondary substrate;
A third step of roughening a portion where a conductive layer not covered with the masking layer is to be formed;
A fourth step of forming a conductive layer by electroless plating on the portion where the roughened conductive layer is to be formed,
In the fourth step, a polarity imparting (wetting) step is omitted. A method for forming a conductive circuit, wherein:
軟質重合体を混合しないシクロオレフィン系樹脂を射出成形して一次基体を形成する第1の工程と、
上記一次基体に対して相溶性を有する、軟質重合体を混合したシクロオレフィン系樹脂を用いて、この一次基体の表面上であって所定の回路パターンからなる導電層を形成すべき部分に被めっき層を射出成形して二次基体を形成する第2の工程と、
上記被めっき層の表面を粗化する第3の工程と、
上記粗化した被めっき層の表面に無電解めっきによって導電層を形成する第4の工程とを備え、
上記第4の工程において、極性付与(湿潤化)工程を省いてある
ことを特徴とする導電性回路の形成方法。
A first step of forming a primary substrate by injection molding a cycloolefin-based resin not mixed with a soft polymer;
Using a cycloolefin resin mixed with a soft polymer having compatibility with the primary substrate, the portion to be plated on the surface of the primary substrate where a conductive layer having a predetermined circuit pattern is to be formed is plated. A second step of injection molding the layer to form a secondary substrate;
A third step of roughening the surface of the plated layer;
A fourth step of forming a conductive layer on the surface of the roughened plating layer by electroless plating,
In the fourth step, a polarity imparting (wetting) step is omitted. A method for forming a conductive circuit, wherein:
請求項2において、上記一次基体は貫通孔を有し、
上記被めっき層の一部は、上記貫通孔を通じて上記一次基体の一方の表面と他方の表面との両表面に射出成形してある
ことを特徴とする導電性回路の形成方法。
In Claim 2, the primary substrate has a through hole,
A part of the layer to be plated is injection-molded on both surfaces of one surface and the other surface of the primary substrate through the through hole.
請求項1〜3のいずれかの1において、上記導電層を形成する第4の工程の後に、この導電層に電解めっきを積層する第5の工程と、
上記軟質重合体を混合しないシクロオレフィン系樹脂の表面に残存する上記無電解めっきで析出させた金属を、化学溶解によって除去する第6の工程を備える
ことを特徴とする導電性回路の形成方法。
In any 1 of Claims 1-3, after the 4th process of forming the said conductive layer, the 5th process of laminating | stacking electroplating on this conductive layer,
A method for forming a conductive circuit, comprising: a sixth step of removing, by chemical dissolution, the metal deposited by the electroless plating remaining on the surface of the cycloolefin resin not mixed with the soft polymer.
請求項1〜4のいずれかの1において、上記シクロオレフィン系樹脂は、シクロオレフィン系樹脂と線状オレフィンとからなるシクロオレフィン共重合樹脂である
ことを特徴とする導電性回路の形成方法。
5. The method for forming a conductive circuit according to claim 1, wherein the cycloolefin-based resin is a cycloolefin copolymer resin including a cycloolefin-based resin and a linear olefin.
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JP2007201212A (en) 2007-08-09
WO2007086359A1 (en) 2007-08-02
DE602007009482D1 (en) 2010-11-11
EP1976352A1 (en) 2008-10-01
EP1976352A4 (en) 2009-12-02
EP1976352B1 (en) 2010-09-29
CN101375649B (en) 2011-03-16
US20090000951A1 (en) 2009-01-01

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