JP3469061B2 - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JP3469061B2 JP3469061B2 JP27273097A JP27273097A JP3469061B2 JP 3469061 B2 JP3469061 B2 JP 3469061B2 JP 27273097 A JP27273097 A JP 27273097A JP 27273097 A JP27273097 A JP 27273097A JP 3469061 B2 JP3469061 B2 JP 3469061B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- transparent electrode
- solar cell
- power generation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000010248 power generation Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 230000037230 mobility Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 239000011521 glass Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池に関し、特
に太陽光を利用した発電システムの太陽電池に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell, and more particularly to a solar cell of a power generation system utilizing sunlight.
【０００２】[0002]
【従来の技術】従来、太陽電池としては、図７に示す構
造のものが知られている。図中の付番１はガラス基板で
ある。このガラス基板１上には、透明電極膜２、非晶質
シリコン発電膜３、及び金属電極膜４が順次形成されて
いる。2. Description of the Related Art Conventionally, a solar cell having a structure shown in FIG. 7 is known. Number 1 in the figure is a glass substrate. A transparent electrode film 2, an amorphous silicon power generation film 3, and a metal electrode film 4 are sequentially formed on the glass substrate 1.
【０００３】こうした構成の太陽電池において、太陽光
はガラス基板１から入射し、透明電極膜２を透過して非
晶質シリコン発電膜３に入射する。太陽光は非晶質シリ
コン発電膜３に吸収されて、透明電極膜２と金属電極膜
４との間に起電力が発生し、電力を外部に取り出すこと
ができる。In the solar cell having such a structure, sunlight enters from the glass substrate 1, passes through the transparent electrode film 2, and enters the amorphous silicon power generation film 3. The sunlight is absorbed by the amorphous silicon power generation film 3, an electromotive force is generated between the transparent electrode film 2 and the metal electrode film 4, and the power can be extracted to the outside.
【０００４】従来の太陽電池では透明電極膜２に酸化
錫、錫添加酸化インジウム、酸化亜鉛を主成分とする材
料を用いており、化学蒸着法（ＣＶＤ）、または物理蒸
着法（ＰＶＤ）で成膜したものを用いている。In the conventional solar cell , a material having tin oxide, tin-added indium oxide and zinc oxide as main components is used for the transparent electrode film 2, and it is formed by chemical vapor deposition (CVD) or physical vapor deposition (PVD). It uses a film.
【０００５】ところで、透明電極膜２の導電性能を向上
させるためには、上記の材料に不純物を添加することが
有効であり、酸化錫膜の場合には不純物としてアンチモ
ンあるいはフッ素等を添加することで、錫添加酸化イン
ジウム膜の場合には添加する錫の濃度を調整すること
で、酸化亜鉛膜の場合には不純物としてアルミニウムあ
るいはホウ素等を添加することで導電性能を向上させる
ことを行っていた。In order to improve the conductive performance of the transparent electrode film 2, it is effective to add impurities to the above materials, and in the case of a tin oxide film, antimony or fluorine is added as an impurity. In the case of a tin-added indium oxide film, the concentration of tin to be added is adjusted, and in the case of a zinc oxide film, aluminum or boron or the like is added as an impurity to improve the conductive performance. .
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、太陽電
池に用いられる透明電極膜２はその電気的性能が太陽電
池の発電性能に影響を及ぼすため、従来の太陽電池では
透明電極膜２の電極性能を向上させるために、透明電極
膜２に添加する不純物の濃度を制御したり、透明電極膜
２の結晶粒径を制御することを行っていたが、不純物濃
度と結晶粒径の制御を行うだけでは透明電極膜２の電極
性能を所望の性能に再現性良く制御することができない
という問題点があった。However, since the electric performance of the transparent electrode film 2 used in the solar cell affects the power generation performance of the solar cell, the electrode performance of the transparent electrode film 2 in the conventional solar cell is reduced. In order to improve, the concentration of impurities added to the transparent electrode film 2 was controlled and the crystal grain size of the transparent electrode film 2 was controlled. However, it is only necessary to control the impurity concentration and the crystal grain size. There is a problem that the electrode performance of the transparent electrode film 2 cannot be controlled to a desired performance with good reproducibility.
【０００７】本発明はこうした事情を考慮してなされた
もので、第１の透明電極膜をキャリア濃度が１×１０
２０ 〜２×１０ ２１ ｃｍ −３ 、移動度が１０〜１００ｃ
ｍ ２ ／Ｖ／ｓｅｃの範囲とし、かつ第１・第２の透明電
極膜が０．０５〜０．５μｍの範囲の高低差のある凹凸
を持つ構成とすることにより、透明電極膜の電極特性を
所望の性能に再現性良く制御できる太陽電池を提供する
ことを目的とする。The present invention has been made in consideration of such circumstances. The first transparent electrode film has a carrier concentration of 1 × 10.
20 to 2 × 10 21 cm −3 , mobility is 10 to 100 c
m 2 / V / sec range and the first and second transparent electrodes
Concavity and convexity with a height difference of 0.05 to 0.5 μm in the polar film
It is an object of the present invention to provide a solar cell in which the electrode characteristics of the transparent electrode film can be controlled to a desired performance with good reproducibility by adopting the above structure.
【０００８】[0008]
【０００９】[0009]
【００１０】[0010]
【課題を解決する為の手段】本発明は、透光性基板と、
この透光性基板上に形成された第１の透明電極膜と、こ
の第１の透明電極膜上に形成された光電変換発電層と、
この光電変換発電層上に形成された第２の透明電極膜
と、この第２の透明電極膜上に形成された背面電極とを
具備し、前記第１の透明電極膜はキャリア濃度が１×１
０２０〜２× １０２１ｃｍ−３、移動度が１０〜１０
０ｃｍ２／Ｖ／ｓｅｃの範囲にあり、前記第１・第２の
透明電極膜は０．０５〜０．５μｍの範囲の高低差のあ
る凹凸を持つことを特徴とする太陽電池である。SUMMARY OF THE INVENTION The present invention comprises a translucent substrate,
A first transparent electrode film formed on the transparent substrate, and
A photoelectric conversion power generation layer formed on the first transparent electrode film of
Second transparent electrode film formed on this photoelectric conversion power generation layer
And a back electrode formed on the second transparent electrode film , wherein the first transparent electrode film has a carrier concentration of 1 × 1.
0 20 to 2 × 10 21 cm −3 , mobility is 10 to 10
It is in the range of 0 cm 2 / V / sec, and the first and second
The transparent electrode film has a height difference of 0.05 to 0.5 μm.
The solar cell is characterized by having unevenness .
【００１１】[0011]
【００１２】[0012]
【００１３】本発明において、透光性基板の材質として
は、例えばガラス、フィルムが挙げられる。本発明にお
いて、前記透明電極膜の材料としては、例えば酸化錫を
主成分とするもの、錫添加酸化インジウムを主成分とす
るもの、あるいは酸化亜鉛を主成分とするものが挙げら
れる。In the present invention, examples of the material of the translucent substrate include glass and film. In the present invention, examples of the material of the transparent electrode film include those containing tin oxide as a main component, those containing tin-added indium oxide as a main component, and those containing zinc oxide as a main component.
【００１４】本発明において、前記第１・第２の透明電
極膜は０．０５〜０．５μｍの範囲の高低差のある凹凸
を持つ構成にしている。これにより、発電層に入射した
太陽光のうち吸収されずに再び透明電極膜から漏れ出す
確率が減少するので、発電効率をさらに向上させる効果
がある。In the present invention, the first and second transparent electrodes
Electrode film are configured to have an uneven with height difference in the range of 0.05 to 0.5 [mu] m. This reduces the probability that the sunlight that has entered the power generation layer will leak out of the transparent electrode film again without being absorbed, and thus there is an effect of further improving power generation efficiency.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施例を図面を参
照して説明する。
（実施例１）
図１を参照する。図中の付番11は、透光性基板としての
ガラス基板である。このガラス基板11上には、透明電極
膜12、非晶質シリコン発電層13及び金属電極膜14が順次
形成されている。前記透明電極膜12のキャリア濃度は１
×１０20〜２×１０21ｃｍ-3で、その移動度は１０〜１
００ｃｍ2 ／Ｖ／ｓｅｃの範囲に調整されている。図２
は、図１に示した太陽電池を２つ以上直列に接続して構
成した例である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. Example 1 Reference is made to FIG. Reference numeral 11 in the figure is a glass substrate as a translucent substrate. A transparent electrode film 12, an amorphous silicon power generation layer 13, and a metal electrode film 14 are sequentially formed on the glass substrate 11. The carrier concentration of the transparent electrode film 12 is 1
× 10 20 to 2 × 10 21 cm -3 , and its mobility is 10 to 1
It is adjusted to a range of 00 cm 2 / V / sec. Figure 2
Is an example in which two or more solar cells shown in FIG. 1 are connected in series.
【００１６】上記実施例１に係る太陽電池によれば、透
明電極膜12のキャリア濃度と移動度とを上記した範囲に
調整しているので、透明電極膜12の電極特性を適正な性
能に再現性良く維持することができ、安定した発電性能
とすることができる。According to the solar cell of Example 1, since the carrier concentration and the mobility of the transparent electrode film 12 are adjusted within the above ranges, the electrode characteristics of the transparent electrode film 12 can be reproduced in proper performance. It can be maintained with good performance and stable power generation performance can be achieved.
【００１７】しかるに、既述したように、透明電極膜の
不純物濃度と結晶粒径を制御するだけでは再現性良く透
明電極性能を制御できない。つまり、透明電極膜の不純
物濃度はキャリア濃度を決定する要因であるが、ＣＶＤ
で成膜するか、またはＰＶＤで成膜するかなどの成膜方
法、また、同じ成膜方法であっても成膜装置が異なる
と、同一の不純物濃度であっても透明電極膜中のキャリ
ア濃度が必ずしも同一の濃度とはならないからである。However, as described above, the transparent electrode performance cannot be controlled with good reproducibility simply by controlling the impurity concentration and the crystal grain size of the transparent electrode film. That is, although the impurity concentration of the transparent electrode film is a factor that determines the carrier concentration, CVD
Film forming method such as film formation by PVD or PVD, or even if the film forming apparatus is different even if the film forming method is the same, the carrier in the transparent electrode film is the same even if the impurity concentration is the same. This is because the concentrations are not always the same.
【００１８】一般的に、透明電極膜の光学的透過率は、
キャリア濃度に反比例し、移動度に比例する関係があ
る。一方、バルク体の電気伝導度は、キャリア濃度と移
動度との積に比例する。しかし、実際の太陽電池に使用
する透明電極膜は多結晶体であり、しかもサブミクロン
レベルのある程度小さな粒径の多結晶体で構成された透
明電極膜が太陽電池に適している。透明電極膜の移動度
は結晶粒径に強く依存する量でもあるため、光学的・電
気的特性が総合的に適した透明電極膜性能とするために
は、上記キャリア濃度と移動度を、それぞれ適正な範囲
に収める必要がある。Generally, the optical transmittance of a transparent electrode film is
It is inversely proportional to carrier concentration and proportional to mobility. On the other hand, the electrical conductivity of the bulk body is proportional to the product of carrier concentration and mobility. However, the transparent electrode film used in an actual solar cell is a polycrystalline body, and a transparent electrode film composed of a polycrystalline body having a particle size to a certain extent at the submicron level is suitable for a solar cell. Since the mobility of the transparent electrode film is also an amount that strongly depends on the crystal grain size, in order to achieve the transparent electrode film performance in which the optical and electrical characteristics are totally suitable, the carrier concentration and the mobility are respectively It needs to be within the proper range.
【００１９】特に、キャリア濃度が異なると、図３、図
４に示すように、透明電極膜の分光透過率が変化して、
太陽電池の分光感度と一致する波長領域の光の発電層に
到達する強度が変化することが原因で発電効率が変化し
てくるため、キャリア濃度を所望の濃度に制御すること
が重要である。なお、図３はキャリア濃度が３．６２×
１０20（ｃｍ-3）の場合、図４はキャリア濃度が１．６
５×１０20（ｃｍ-3）の場合を示す。In particular, when the carrier concentration is different, the spectral transmittance of the transparent electrode film changes as shown in FIGS.
It is important to control the carrier concentration to a desired concentration because the power generation efficiency changes due to the change in the intensity of the light reaching the power generation layer in the wavelength region that matches the spectral sensitivity of the solar cell. In addition, in FIG. 3, the carrier concentration is 3.62 ×.
In the case of 10 20 (cm −3 ), FIG. 4 shows that the carrier concentration is 1.6.
The case of 5 × 10 20 (cm −3 ) is shown.
【００２０】結晶粒径は透明電極膜の移動度を決定する
主要因の一つであるが、先述と同様の理由により、成膜
方法、成膜装置により同一の結晶粒径であっても透明電
極膜の移動度が必ずしも同一の移動度とはならないから
である。The crystal grain size is one of the main factors that determine the mobility of the transparent electrode film, but for the same reason as described above, even if the crystal grain size is the same depending on the film forming method and the film forming apparatus, it is transparent. This is because the mobilities of the electrode films are not always the same.
【００２１】本発明の太陽電池を製造するには、透明電
極膜の成膜装置ごとに、キャリア濃度、移動度と成膜条
件との因果関係を把握しておくことにより、透明電極を
成膜する装置が複数存在する場合でも、太陽電池の発電
性能を再現性良く安定させることが可能となる。なお、
キャリア濃度、移動度は、磁界中で電気的特性を計測す
るホール効果計測による。In order to manufacture the solar cell of the present invention, the transparent electrode is formed by grasping the causal relationship between the carrier concentration, the mobility and the film forming condition for each transparent electrode film forming apparatus. It is possible to stabilize the power generation performance of the solar cell with good reproducibility even when there are a plurality of devices that operate. In addition,
The carrier concentration and mobility are measured by the Hall effect measurement, which measures the electrical characteristics in a magnetic field.
【００２２】（実施例２）図５を参照する。図中の付番
21は、ガラス基板である。このガラス基板21上には、第
１の透明電極膜22、非晶質シリコン発電層23、第２の透
明電極膜24及び金属電極膜25が順次形成されている。前
記第１の透明電極膜22のキャリア濃度は１×１０20〜２
×１０21ｃｍ-3で、その移動度は１０〜１００ｃｍ2 ／
Ｖ／ｓｅｃの範囲に調整されている。また、前記第２の
透明電極膜24は、例えば錫添加酸化インジウムからな
る。(Embodiment 2) Referring to FIG. Numbering in the figure
21 is a glass substrate. A first transparent electrode film 22, an amorphous silicon power generation layer 23, a second transparent electrode film 24, and a metal electrode film 25 are sequentially formed on the glass substrate 21. The carrier concentration of the first transparent electrode film 22 is 1 × 10 20 to 2
The mobility is 10 21 cm -3 and the mobility is 10 to 100 cm 2 /
It is adjusted to the range of V / sec. The second transparent electrode film 24 is made of tin-doped indium oxide, for example.
【００２３】実施例２に係る太陽電池は、図５に示すよ
うに、ガラス基板21上に、第１の透明電極膜22、非晶質
シリコン発電層23、第２の透明電極膜24及び金属電極膜
25を順次形成し、第１の透明電極膜22のキャリア濃度、
移動度を上記の範囲に規定した構成となっている。しか
るに、実施例２においては、非晶質シリコン発電層23と
金属電極膜25との間に第２の透明電極膜24を設けた構成
となっているため、実施例１と比べ、高い反射効果が得
られ、その結果、より大きな短絡電流、ひいては高い変
換効率が得られる。As shown in FIG. 5, the solar cell according to the second embodiment includes a glass substrate 21, a first transparent electrode film 22, an amorphous silicon power generation layer 23, a second transparent electrode film 24 and a metal. Electrode film
25 are sequentially formed, and the carrier concentration of the first transparent electrode film 22 is
The mobility is defined in the above range. However, in the second embodiment, since the second transparent electrode film 24 is provided between the amorphous silicon power generation layer 23 and the metal electrode film 25, the high reflection effect is obtained as compared with the first embodiment. Which results in higher short circuit currents and thus higher conversion efficiencies.
【００２４】ここで、第２の透明電極膜24を介在させた
理由は、以下の通りである。即ち、金属電極膜25のみで
構成するより、より大きな短絡電流が得られるからであ
る。屈折率の大きな非晶質シリコン発電層23から屈折率
の小さな第２の透明電極膜24へ光が入射するので、必然
的に反射臨界角が大きくなり、高い反射効果が得られ
る。従って、金属電極膜25でも更に反射効果が得られる
ので、その結果金属電極膜単独の場合（実施例１の場
合）よりもより大きな短絡電流が得られる。また、第２
の透明電極膜24を間に挿入することで、非晶質シリコン
発電層23と金属電極膜25との間の相互拡散を防止する効
果もある。相互拡散すると、金属電極膜25では反射率が
低下し、非晶質シリコン発電層23では発電性能の低下が
生じるためである。Here, the reason for interposing the second transparent electrode film 24 is as follows. That is, a larger short-circuit current can be obtained as compared with the case where only the metal electrode film 25 is used. Since the light enters from the amorphous silicon power generation layer 23 having a large refractive index to the second transparent electrode film 24 having a small refractive index, the reflection critical angle inevitably becomes large and a high reflection effect can be obtained. Therefore, the reflection effect is further obtained with the metal electrode film 25, and as a result, a larger short circuit current can be obtained as compared with the case of the metal electrode film alone (the case of Example 1). Also, the second
Inserting the transparent electrode film 24 in between also has an effect of preventing mutual diffusion between the amorphous silicon power generation layer 23 and the metal electrode film 25 . This is because the mutual diffusion causes a decrease in reflectance in the metal electrode film 25 and a decrease in power generation performance in the amorphous silicon power generation layer 23.
【００２５】（実施例３）
図６を参照する。図中の付番31は、不透光性基板として
の金属製基板である。なお、金属製基板の代わりに他の
導電性のある不透光性基板を用いてもよい。この金属製
基板31上には、第１の透明電極膜32、非晶質シリコン発
電層33、及び第２の透明電極膜34が順次形成されてい
る。前記第２の透明電極膜34のキャリア濃度は１×１０
20〜２×１０21ｃｍ-3で、その移動度は１０〜１００ｃ
ｍ2 ／Ｖ／ｓｅｃの範囲に調整されている。Example 3 Reference is made to FIG. Reference numeral 31 in the figure is a metal substrate as an opaque substrate. Instead of the metal substrate, another non-transparent substrate having conductivity may be used. Made of this metal
A first transparent electrode film 32, an amorphous silicon power generation layer 33, and a second transparent electrode film 34 are sequentially formed on the substrate 31. The carrier concentration of the second transparent electrode film 34 is 1 × 10.
The mobility is 20 to 2 × 10 21 cm -3 and the mobility is 10 to 100 c.
It is adjusted within the range of m 2 / V / sec.
【００２６】実施例３に係る太陽電池は、図６に示すよ
うに、金属製基板31上に、第１の透明電極膜32、非晶質
シリコン発電層33、第２の透明電極膜34を順次形成し、
第２の透明電極膜34のキャリア濃度、移動度を上記の範
囲に規定した構成となっている。実施例３では、太陽光
は第２の透明電極膜34の側から入射する構造としたもの
であり、実施例１と同様な作用、効果を有する。In the solar cell according to Example 3, as shown in FIG. 6, a first transparent electrode film 32, an amorphous silicon power generation layer 33, and a second transparent electrode film 34 were formed on a metal substrate 31. Formed sequentially,
The carrier concentration and the mobility of the second transparent electrode film 34 are defined within the above ranges. In the third embodiment, sunlight has a structure in which it is incident from the second transparent electrode film 34 side, and has the same operation and effect as in the first embodiment.
【００２７】[0027]
【発明の効果】以上詳述したように本発明によれば、第
１の透明電極膜をキャリア濃度が１×１０ ２０ 〜２×１
０ ２１ ｃｍ −３ 、移動度が１０〜１００ｃｍ ２ ／Ｖ／ｓ
ｅｃの範囲とし、かつ第１・第２の透明電極膜が０．０
５〜０．５μｍの範囲の高低差のある凹凸を持つ構成と
することにより、透明電極膜の電極特性を所望の性能に
再現性良く制御できる太陽電極を提供できる。According to the present invention as described in detail above, the
1 has a carrier concentration of 1 × 10 20 to 2 × 1.
0 21 cm -3 , mobility 10 to 100 cm 2 / V / s
ec range, and the first and second transparent electrode films are 0.0
With the configuration having the unevenness having a height difference in the range of 5 to 0.5 μm, it is possible to provide a solar electrode capable of controlling the electrode characteristics of the transparent electrode film to desired performance with good reproducibility.
【００２８】[0028]
【００２９】[0029]
【図１】本発明の実施例１に係る太陽電池の要部の断面
図。FIG. 1 is a sectional view of a main part of a solar cell according to a first embodiment of the present invention.
【図２】図１の太陽電池を２つ以上直列に接続した状態
の説明図。FIG. 2 is an explanatory diagram of a state in which two or more solar cells of FIG. 1 are connected in series.
【図３】キャリア濃度３．６２×１０20（ｃｍ-3）の場
合の、透過率と波長との関係を示す特性図。FIG. 3 is a characteristic diagram showing the relationship between the transmittance and the wavelength when the carrier concentration is 3.62 × 10 20 (cm −3 ).
【図４】キャリア濃度が１．６５×１０20（ｃｍ-3）の
場合の、透過率と波長との関係を示す特性図。FIG. 4 is a characteristic diagram showing the relationship between transmittance and wavelength when the carrier concentration is 1.65 × 10 20 (cm −3 ).
【図５】本発明の実施例２に係る太陽電池の要部の断面
図。FIG. 5 is a sectional view of a main part of a solar cell according to a second embodiment of the present invention.
【図６】本発明の実施例３に係る太陽電池の要部の断面
図。FIG. 6 is a sectional view of a main part of a solar cell according to a third embodiment of the present invention.
【図７】従来の太陽電池の要部の断面図。FIG. 7 is a sectional view of a main part of a conventional solar cell.
11、21…ガラス基板（透光孔性基板）、 12、22、24、32、34…透明電極膜、 13、23、33…非晶質シリコン発電層、 14，25…金属電極膜、 31…金属製基板（不透光性基板）。11, 21 ... Glass substrate ( translucent substrate), 12, 22, 24, 32, 34 ... Transparent electrode film, 13, 23, 33 ... Amorphous silicon power generation layer, 14, 25 ... Metal electrode film, 31 … Metal substrate (translucent substrate).
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平６−318717（ＪＰ，Ａ) 特開 平７−131040（ＪＰ，Ａ) 特開 平２−81478（ＪＰ，Ａ) 特開 平６−181331（ＪＰ，Ａ) 特開 平８−171724（ＪＰ，Ａ) 特開 平６−41723（ＪＰ，Ａ) 特開 平７−183554（ＪＰ，Ａ) 特開 平８−32094（ＪＰ，Ａ) 特開 昭60−170269（ＪＰ，Ａ) 特開 昭63−313874（ＪＰ，Ａ) 米国特許5282902（ＵＳ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 31/04 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-318717 (JP, A) JP-A-7-131040 (JP, A) JP-A-2-81478 (JP, A) JP-A-6- 181331 (JP, A) JP 8-171724 (JP, A) JP 6-41723 (JP, A) JP 7-183554 (JP, A) JP 8-32094 (JP, A) JP-A-60-170269 (JP, A) JP-A-63-313874 (JP, A) US Pat. No. 5,282,902 (US, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 31/04
Claims (4)
された第１の透明電極膜と、この第１の透明電極膜上に
形成された光電変換発電層と、この光電変換発電層上に
形成された第２の透明電極膜と、この第２の透明電極膜
上に形成された背面電極とを具備し、前記第１の透明電
極膜はキャリア濃度が１×１０２０〜２×１０２１ｃｍ
−３、移動度が１０〜１００ｃｍ２／Ｖ／ｓｅｃの範囲
にあり、前記第１・第２の透明電極膜は０．０５〜０．
５μｍの範囲の高低差のある凹凸を持つことを特徴とす
る太陽電池。1. A transparent substrate, a first transparent electrode film formed on the transparent substrate, and a transparent electrode film on the first transparent electrode film.
On the formed photoelectric conversion power generation layer and this photoelectric conversion power generation layer
Formed second transparent electrode film and this second transparent electrode film
A back electrode formed on the first transparent electrode film, and the first transparent electrode film has a carrier concentration of 1 × 10 20 to 2 × 10 21 cm 2.
-3 , the mobility is in the range of 10 to 100 cm 2 / V / sec, and the first and second transparent electrode films are 0.05 to 0.
A solar cell having irregularities with a height difference of 5 μm .
ことを特徴とする請求項１記載の太陽電池。2. The transparent electrode film contains tin oxide as a main component.
The solar cell according to claim 1, wherein:
を主成分とすることを特徴とする請求項１記載の太陽電
池。3. The transparent electrode film is tin-doped indium oxide
The solar cell according to claim 1, wherein the solar cell is a main component .
ることを特徴とする請求項１記載の太陽電池。 4. The transparent electrode film contains zinc oxide as a main component.
The solar cell according to claim 1, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27273097A JP3469061B2 (en) | 1997-10-06 | 1997-10-06 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27273097A JP3469061B2 (en) | 1997-10-06 | 1997-10-06 | Solar cell |
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| Publication Number | Publication Date |
|---|---|
| JPH11112009A JPH11112009A (en) | 1999-04-23 |
| JP3469061B2 true JP3469061B2 (en) | 2003-11-25 |
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ID=17517987
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27273097A Ceased JP3469061B2 (en) | 1997-10-06 | 1997-10-06 | Solar cell |
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| Country | Link |
|---|---|
| JP (1) | JP3469061B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100595933C (en) * | 2005-11-17 | 2010-03-24 | 旭硝子株式会社 | Method for producing transparent conductive substrate for solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5282902A (en) | 1991-05-09 | 1994-02-01 | Canon Kabushiki Kaisha | Solar cell provided with a light reflection layer |
-
1997
- 1997-10-06 JP JP27273097A patent/JP3469061B2/en not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5282902A (en) | 1991-05-09 | 1994-02-01 | Canon Kabushiki Kaisha | Solar cell provided with a light reflection layer |
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| JPH11112009A (en) | 1999-04-23 |
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