JP2002299658A - Photovoltaic element - Google Patents
Photovoltaic elementInfo
- Publication number
- JP2002299658A JP2002299658A JP2001099364A JP2001099364A JP2002299658A JP 2002299658 A JP2002299658 A JP 2002299658A JP 2001099364 A JP2001099364 A JP 2001099364A JP 2001099364 A JP2001099364 A JP 2001099364A JP 2002299658 A JP2002299658 A JP 2002299658A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- transparent conductive
- semiconductor layer
- carrier density
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 238000003475 lamination Methods 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光起電力素子に関
する。[0001] The present invention relates to a photovoltaic element.
【０００２】[0002]
【従来の技術】従来の光起電力素子の構造が、例えば、
特開平９−１２９９０４号に開示されている。この構造
は、表面側より透明導電膜（ＩＴＯ）／ｐ型非晶質半導
体膜／ｉ型非晶質半導体膜／ｎ型結晶系半導体基板／ｉ
型非晶質半導体膜／ｎ型非晶質半導体膜／透明導電膜
（ＩＴＯ）／裏面電極膜である。2. Description of the Related Art The structure of a conventional photovoltaic element is, for example, as follows.
It is disclosed in JP-A-9-129904. This structure has a transparent conductive film (ITO) / p-type amorphous semiconductor film / i-type amorphous semiconductor film / n-type crystalline semiconductor substrate / i
Type amorphous semiconductor film / n-type amorphous semiconductor film / transparent conductive film (ITO) / backside electrode film.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の技術におい
ては、透明導電膜については、良好な導通を得るため
に、シート抵抗が小さいものを採用していた。In the above prior art, a transparent conductive film having a small sheet resistance has been adopted in order to obtain good conduction.
【０００４】本発明は、従来の構造において、透明導電
膜質を改善して、良好な特性の光起電力素子を提供する
ことを目的とする。[0004] It is an object of the present invention to provide a photovoltaic element having good characteristics by improving the quality of a transparent conductive film in a conventional structure.
【０００５】[0005]
【課題を解決するための手段】本発明の主要な構成は、
略板状の光起電力素子の少なくとも受光面側に、該面側
の表面より透明導電膜、非晶質又は微結晶の導電型半導
体層及び結晶系半導体基板の積層構造を有した光起電力
素子であって、前記透明導電膜は、キャリア密度が６×
１０20／ｃｍ3未満であることを特徴とする。The main constitution of the present invention is as follows.
A photovoltaic device having a laminated structure of a transparent conductive film, an amorphous or microcrystalline conductive semiconductor layer, and a crystalline semiconductor substrate at least on the light receiving surface side of the substantially plate-shaped photovoltaic element from the surface on the surface side. An element, wherein the transparent conductive film has a carrier density of 6 ×
It is characterized by being less than 10 20 / cm 3 .
【０００６】[0006]
【発明の実施の形態】本発明の一実施例を、図面を用い
て、詳細に説明する。図1に示すように、本実施例の光
起電力素子は、１００ｍｍ角程度の正方形で、厚さ約１
００〜５００μmのｎ型の単結晶シリコン（抵抗率＝約
０．５〜4Ω・ｃｍ）からなる結晶系半導体基板１を備
える。そして、結晶系半導体基板１の表面上に、プラズ
マＣＶＤ法を用いて形成された非晶質シリコンの真性半
導体層真性半導体層２（約５０〜２００Å）、結晶系半
導体基板１の裏面上に、プラズマＣＶＤ法を用いて形成
された非晶質シリコンの真性半導体層３（約５０〜２０
０Å）を備える。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described in detail with reference to the drawings. As shown in FIG. 1, the photovoltaic element of this embodiment is a square having a size of about 100 mm square and a thickness of about 1 mm.
A crystalline semiconductor substrate 1 made of n-type single crystal silicon (resistivity = about 0.5 to 4 Ω · cm) having a thickness of 00 to 500 μm is provided. Then, on the front surface of the crystalline semiconductor substrate 1, an amorphous semiconductor intrinsic semiconductor layer 2 (about 50 to 200 °) formed by using a plasma CVD method, and on the back surface of the crystalline semiconductor substrate 1, Amorphous silicon intrinsic semiconductor layer 3 (about 50 to 20) formed by a plasma CVD method.
0Å).
【０００７】真性半導体層２上には、プラズマＣＶＤ法
を用いて形成されたｐ型非晶質シリコンの導電型半導体
層４（約５０〜２００Å）、真性半導体層３裏面上にプ
ラズマＣＶＤ法を用いて形成されたｎ型非晶質シリコン
の導電型半導体層５（約１００〜５００Å）を備えてい
る。On the intrinsic semiconductor layer 2, a p-type amorphous silicon conductive semiconductor layer 4 (about 50 to 200 °) formed by using a plasma CVD method, and on the back surface of the intrinsic semiconductor layer 3, a plasma CVD method is used. The semiconductor device has an n-type amorphous silicon conductive semiconductor layer 5 (approximately 100 to 500 °).
【０００８】なお、真性半導体層２、３、導電型半導体
層４、５には、非晶質シリコンを用いているが、微結晶
シリコンを用いても良い。Although the intrinsic semiconductor layers 2 and 3 and the conductive semiconductor layers 4 and 5 are made of amorphous silicon, they may be made of microcrystalline silicon.
【０００９】表面側において、導電型半導体層４上に形
成された酸化インジウム錫（＝ＩＴＯ）からなる透明導
電膜６、裏面側において、導電型半導体層５上に形成さ
れた酸化インジウム錫（＝ＩＴＯ）からなる透明導電膜
７を備えている。本実施例においては、透明導電膜６、
７の膜厚を１０００Åとした。On the front side, a transparent conductive film 6 made of indium tin oxide (= ITO) formed on the conductive type semiconductor layer 4, and on the back side, indium tin oxide (= ITO) formed on the conductive type semiconductor layer 5. A transparent conductive film 7 made of ITO) is provided. In this embodiment, the transparent conductive film 6,
The thickness of No. 7 was set to 1000 °.
【００１０】更に、表面の透明導電膜６上に集電極１
０、裏面側の透明導電膜７上に集電極２０を有してい
る。集電極１０、２０は、図２において、光起電力素子
の裏面側から見た平面図は、表面側から見た平面図（＝
図２（ａ））と同一につき、図示していない。Further, the collector electrode 1 is formed on the transparent conductive film 6 on the surface.
0, a collector electrode 20 is provided on the transparent conductive film 7 on the back surface side. In FIG. 2, the collector electrodes 10 and 20 are different from the plan view seen from the back side of the photovoltaic element in the plan view seen from the front side (=
It is the same as FIG.
【００１１】図に示すように、集電極１０、２０は、銀
ペーストからなり、スクリーン印刷後加熱処理して形成
あれる。加熱処理による透明導電膜、非晶質半導体層へ
の悪影響を考慮して、加熱処理の温度が約２００℃で形
成できる低温加熱処理タイプの銀ペーストを採用してい
る。As shown in the figure, the collector electrodes 10 and 20 are made of a silver paste, and are formed by screen printing followed by heat treatment. In consideration of the adverse effect of the heat treatment on the transparent conductive film and the amorphous semiconductor layer, a low-temperature heat treatment type silver paste that can be formed at a heat treatment temperature of about 200 ° C. is used.
【００１２】詳細には、集電極１０、２０は、側辺と平
行に延びる２本のバス電極部１１、２１（幅約２ｍｍ）
と、このバス電極部１１、２１より直交して延びる複数
のフィンガー電極部１２、２２（幅約５０μｍ、間隔約
２〜３ｍｍ）とからなる。More specifically, the collecting electrodes 10 and 20 are composed of two bus electrode portions 11 and 21 (width about 2 mm) extending parallel to the side.
And a plurality of finger electrode portions 12 and 22 (width of about 50 μm, spacing of about 2 to 3 mm) extending orthogonally from the bus electrode portions 11 and 21.
【００１３】このような構造の太陽電池素子の分光感度
スペクトルは、特許第２６１４５６１号の図２に開示が
あるように、４００〜１１００ｎｍに渡り幅広い分光感
度特性を有している。それゆえ、透明導電膜について
は、可視光（約４００〜６５０ｎｍ）の透過性のみなら
ず、約６５０〜１１００ｎｍの赤外線に対する透過性が
大きいことも重要である。The spectral sensitivity spectrum of the solar cell element having such a structure has a wide spectral sensitivity characteristic over a range of 400 to 1100 nm as disclosed in FIG. 2 of Japanese Patent No. 2614561. Therefore, it is important that the transparent conductive film not only has high transmittance for visible light (about 400 to 650 nm) but also has high transmittance for infrared rays of about 650 to 1100 nm.
【００１４】図３は、透明導電膜（ＩＴＯ）の吸収率の
分光特性を示している。曲線Ａが、従来であり、キャリ
ア密度６×１０20／ｃｍ3、低抵抗な１０００Åで３０
Ω／□の透明導電膜を示している。６００ｎｍ以上の波
長において、吸収が大きいことが理解できる。なお、こ
の従来の透明導電膜は、キャリア密度６×１０20／ｃｍ
3、抵抗率が３．０×１０-4Ω・ｃｍであった。FIG. 3 shows the spectral characteristics of the absorptance of the transparent conductive film (ITO). Curve A shows a conventional curve having a carrier density of 6 × 10 20 / cm 3 and a low resistance of 30 ° at 1000 °.
The transparent conductive film of Ω / □ is shown. It can be understood that absorption is large at a wavelength of 600 nm or more. This conventional transparent conductive film has a carrier density of 6 × 10 20 / cm.
3. The resistivity was 3.0 × 10 −4 Ω · cm.
【００１５】本実施例においては、長波長の６００ｎｍ
以上の波長において吸収が少ない透明導電膜を得ること
ができた。その分光感度特性を、曲線Ｂ（テスト１）に
示す。特に、８００ｎｍ以上の波長において、吸収が小
さい。なお、曲線Ｂの透明導電膜は、キャリア密度４×
１０20／ｃｍ3、抵抗率が３．５×１０-4Ω・ｃｍ（１
０００Åで３５Ω／□）であった。In this embodiment, a long wavelength of 600 nm
A transparent conductive film having little absorption at the above wavelengths was obtained. The spectral sensitivity characteristics are shown in a curve B (test 1). In particular, absorption is small at a wavelength of 800 nm or more. Note that the transparent conductive film of curve B has a carrier density of 4 ×
10 20 / cm 3 and resistivity of 3.5 × 10 −4 Ω · cm (1
35Ω / □ at 000 °).
【００１６】また、同様に、本実施例である曲線Ｃ（テ
スト２）においても、長波長の６００ｎｍ以上の波長に
おいて吸収が少ない透明導電膜を得ることができた。な
お、曲線Ｃの透明導電膜は、キャリア密度２×１０20／
ｃｍ3、抵抗率が４．０×１０-4Ω・ｃｍ（１０００Å
で４０Ω／□）であった。Similarly, in the curve C (test 2) of the present embodiment, a transparent conductive film having little absorption at a long wavelength of 600 nm or more was obtained. The transparent conductive film of the curve C has a carrier density of 2 × 10 20 /
cm 3 and a resistivity of 4.0 × 10 −4 Ω · cm (1000 °
40Ω / □).
【００１７】このような図３における曲線Ｂ、Ｃの分光
感度特性を有する透明導電膜は、膜中の酸素量を増加さ
せることにより達成できることが確認できた。詳細に
は、本実施例の透明導電膜は、ＩＴＯターゲット（Ｉｎ
2Ｏ3とＳｎＯ2との混合）を用いて、Ａｒガス及び酸素
ガスを導入してスパッタ成膜を行い、成膜中のＯ2ガス
の流量を増加させることにより、透明導電膜中の酸素量
を増加させることができた。具体的には、スパッタ成膜
中の酸素ガス流量を、２．０ＳＣＣＭ（従来、曲線
Ａ）、４ＳＣＣＭ（テスト１、曲線Ｂ）、７ＳＣＣＭ
（テスト２、曲線Ｃ）とすることで、透明導電膜中の酸
素量を増加させた。酸素量が多いと、長波長での吸収を
抑えることができるものの、透明導電膜中の酸素欠損が
なくなり、電気伝導が悪くなり、抵抗値が上昇する。こ
のことは、上記の透明導電膜の物性の比較でも確認でき
る。透明導電膜中の酸素量は、キャリア密度を指標とす
ることができ、酸素量が増加すると、キャリア密度が減
少する。It has been confirmed that such a transparent conductive film having the spectral sensitivity characteristics of curves B and C in FIG. 3 can be achieved by increasing the amount of oxygen in the film. Specifically, the transparent conductive film of the present embodiment is made of an ITO target (In
(Mixture of 2 O 3 and SnO 2 ) by introducing Ar gas and oxygen gas to form a film by sputtering, and by increasing the flow rate of O 2 gas during the film formation, the oxygen in the transparent conductive film is increased. The amount could be increased. Specifically, the oxygen gas flow rate during sputtering film formation was set to 2.0 SCCM (conventional, curve A), 4 SCCM (test 1, curve B), 7 SCCM
(Test 2, curve C) increased the amount of oxygen in the transparent conductive film. When the amount of oxygen is large, although absorption at a long wavelength can be suppressed, oxygen deficiency in the transparent conductive film is eliminated, electric conductivity is deteriorated, and resistance value is increased. This can be confirmed by comparing the physical properties of the transparent conductive film. The amount of oxygen in the transparent conductive film can be determined using the carrier density as an index. As the amount of oxygen increases, the carrier density decreases.
【００１８】そして、本実施例の透明導電膜において、
酸素量を増加させることにより、抵抗値は上昇するもの
の、約６００ｎｍ以上での吸収を抑え、光起電力素子の
出力を増加させることができた。表１に、このような透
明導電膜を図２の構造に採用した場合の特性比較を示
す。Then, in the transparent conductive film of this embodiment,
By increasing the amount of oxygen, although the resistance value increased, absorption at about 600 nm or more was suppressed, and the output of the photovoltaic element was able to be increased. Table 1 shows a comparison of characteristics when such a transparent conductive film is employed in the structure of FIG.
【００１９】[0019]
【表１】 [Table 1]
【００２０】表１より、本実施例のテスト１、２におい
ては、従来と比較して、透明導電膜中の酸素量を増加さ
せたことにより（キャリア密度は低下する）、抵抗率が
大きいものの（ＦＦが低下する）、長波長での吸収を低
下させることができるので、Ｉｓｃを増加し、トータル
の出力であるＰｍａｘが向上している。From Table 1, it can be seen that in Tests 1 and 2 of this embodiment, although the resistivity was large due to the increase in the amount of oxygen in the transparent conductive film (the carrier density was reduced) as compared with the conventional test, (The FF is reduced.) Since the absorption at a long wavelength can be reduced, Isc is increased, and Pmax, which is the total output, is improved.
【００２１】本実施例においては、改良された透明導電
膜を、光起電力素子の表面、裏面に用いたが、入射面で
ある表面に利用するだけでも、十分な特性向上がある。In this embodiment, the improved transparent conductive film is used on the front and back surfaces of the photovoltaic element. However, even if it is used only on the front surface which is the incident surface, the characteristics are sufficiently improved.
【００２２】[0022]
【発明の効果】本発明においては、略板状の光起電力素
子の少なくとも受光面側に、該面側の表面より透明導電
膜、非晶質又は微結晶の導電型半導体層及び結晶系半導
体基板の積層構造を有した光起電力素子において、透明
導電膜は、キャリア密度が６×１０20／ｃｍ3未満であ
って、酸素量が多いことより、長波長での吸収を低下さ
せることができる。According to the present invention, a transparent conductive film, an amorphous or microcrystalline conductive semiconductor layer, and a crystalline semiconductor are formed on at least the light receiving surface side of a substantially plate-shaped photovoltaic element from the surface side. In a photovoltaic device having a laminated structure of substrates, the transparent conductive film has a carrier density of less than 6 × 10 20 / cm 3 and has a large amount of oxygen, so that absorption at a long wavelength can be reduced. it can.
【図１】本発明の製造途中の光起電力素子を示す図であ
り、（a）は平面図、（ｂ）は（ａ）におけるＡ−Ａ断
面図である。FIGS. 1A and 1B are diagrams showing a photovoltaic element in the process of manufacturing according to the present invention, wherein FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line AA in FIG.
【図２】本発明の光起電力素子を示す図であり、（a）
は平面図、（ｂ）は（ａ）におけるＡ−Ａ拡大断面図、
（ｃ）は（ａ）におけるＢ−Ｂ拡大断面図である。FIG. 2 is a diagram showing a photovoltaic device of the present invention, wherein (a)
Is a plan view, (b) is an AA enlarged sectional view in (a),
(C) is an BB enlarged sectional view in (a).
【図３】分光特性のグラフを示す。FIG. 3 shows a graph of spectral characteristics.
１ 結晶系半導体基板 ２、３ 真性非晶質半導体層 ４、５ 導電型非晶質半導体層 ６、７ 透明導電膜 １０、２０ 集電極 １１、２１ バス電極部 １２、２２ フィンガー電極部 REFERENCE SIGNS LIST 1 crystal-based semiconductor substrate 2, 3 intrinsic amorphous semiconductor layer 4, 5 conductive-type amorphous semiconductor layer 6, 7 transparent conductive film 10, 20 collector electrode 11, 21 bus electrode part 12, 22 finger electrode part
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5F051 AA02 AA04 AA05 BA16 CA15 CB15 CB27 DA20 FA04 FA10 FA14 GA04 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F051 AA02 AA04 AA05 BA16 CA15 CB15 CB27 DA20 FA04 FA10 FA14 GA04
Claims (6)
面側に、該面側の表面より透明導電膜、非晶質又は微結
晶の導電型半導体層及び結晶系半導体基板の積層構造を
有した光起電力素子であって、 前記透明導電膜は、キャリア密度が６×１０20／ｃｍ3
未満であることを特徴とする光起電力素子。1. A laminated structure of a transparent conductive film, an amorphous or microcrystalline conductive semiconductor layer, and a crystalline semiconductor substrate on at least a light receiving surface side of a substantially plate-shaped photovoltaic element from the surface side. The transparent conductive film has a carrier density of 6 × 10 20 / cm 3.
A photovoltaic element, wherein
は微結晶の一導電型半導体層及び透明導電膜を積層し、
前記基板の裏面上に、非晶質又は微結晶の他導電型半導
体層を積層した光起電力素子であって、 前記透明導電膜は、キャリア密度が６×１０20／ｃｍ3
未満であることを特徴とする光起電力素子。2. An amorphous or microcrystalline one conductivity type semiconductor layer and a transparent conductive film are laminated on a surface of a crystalline semiconductor substrate,
A photovoltaic device in which an amorphous or microcrystalline other conductive semiconductor layer is laminated on a back surface of the substrate, wherein the transparent conductive film has a carrier density of 6 × 10 20 / cm 3.
A photovoltaic element, wherein
に、非晶質又は微結晶からなる真性半導体層を介在した
ことを特徴とする請求項１又は２の光起電力素子。3. The photovoltaic device according to claim 1, wherein an intrinsic semiconductor layer made of amorphous or microcrystalline is interposed between said semiconductor substrate and said semiconductor layer.
あることを特徴とする請求項１又は２の光起電力素子。4. The photovoltaic device according to claim 1, wherein the transparent conductive film is made of indium tin oxide.
１０20／ｃｍ3以下であることを特徴とする請求項１又
は２の光起電力素子。5. The transparent conductive film has a carrier density of 4 ×.
The photovoltaic device according to claim 1, wherein the photovoltaic device has a density of 10 20 / cm 3 or less.
０-4Ω・ｃｍ以上であることを特徴とする請求項１又は
２の光起電力素子。6. The transparent conductive film has a resistivity of 3.5 × 1.
The photovoltaic device according to claim 1, wherein the photovoltaic device has a resistivity of 0 −4 Ω · cm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001099364A JP2002299658A (en) | 2001-03-30 | 2001-03-30 | Photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001099364A JP2002299658A (en) | 2001-03-30 | 2001-03-30 | Photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002299658A true JP2002299658A (en) | 2002-10-11 |
Family
ID=18952908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001099364A Pending JP2002299658A (en) | 2001-03-30 | 2001-03-30 | Photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002299658A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501305B2 (en) | 2006-10-23 | 2009-03-10 | Canon Kabushiki Kaisha | Method for forming deposited film and photovoltaic element |
| WO2012020682A1 (en) * | 2010-08-09 | 2012-02-16 | 株式会社カネカ | Crystalline silicon solar cell |
| WO2012050186A1 (en) * | 2010-10-14 | 2012-04-19 | 株式会社カネカ | Method of producing crystalline silicon-based photovoltaic cell |
| JP2015516692A (en) * | 2012-05-16 | 2015-06-11 | ロス・ウント・ラウ・アーゲー | Heterocontact solar cell and method of manufacturing the same |
-
2001
- 2001-03-30 JP JP2001099364A patent/JP2002299658A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501305B2 (en) | 2006-10-23 | 2009-03-10 | Canon Kabushiki Kaisha | Method for forming deposited film and photovoltaic element |
| WO2012020682A1 (en) * | 2010-08-09 | 2012-02-16 | 株式会社カネカ | Crystalline silicon solar cell |
| JPWO2012020682A1 (en) * | 2010-08-09 | 2013-10-28 | 株式会社カネカ | Crystalline silicon solar cell |
| WO2012050186A1 (en) * | 2010-10-14 | 2012-04-19 | 株式会社カネカ | Method of producing crystalline silicon-based photovoltaic cell |
| JPWO2012050186A1 (en) * | 2010-10-14 | 2014-02-24 | 株式会社カネカ | Method for manufacturing crystalline silicon solar cell |
| US9276163B2 (en) | 2010-10-14 | 2016-03-01 | Kaneka Corporation | Method for manufacturing silicon-based solar cell |
| JP2015516692A (en) * | 2012-05-16 | 2015-06-11 | ロス・ウント・ラウ・アーゲー | Heterocontact solar cell and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20190198706A1 (en) | Heterojunction Solar Cell and Fabrication Method Thereof | |
| CN103107228B (en) | Photoelectric conversion device | |
| US20080105298A1 (en) | Front electrode for use in photovoltaic device and method of making same | |
| CN113224182B (en) | Heterojunction solar cell and preparation method thereof | |
| CN211828779U (en) | Silicon heterojunction solar cell and laminated transparent conductive oxide film | |
| WO2013061637A1 (en) | Photoelectric conversion device and method for manufacturing same, and photoelectric conversion module | |
| JP2006319068A (en) | Multi-junction silicon-based thin film photoelectric conversion device and manufacturing method thereof | |
| CN107112378A (en) | Solar cell, manufacturing method thereof, and solar cell module | |
| JP2011035396A (en) | Solar cell substrate, and method of manufacturing the same | |
| CN109075218A (en) | A kind of solar heterojunction battery and its preparation method | |
| US9184320B2 (en) | Photoelectric conversion device | |
| JP2008270562A (en) | Multi-junction type solar cell | |
| CN105103307A (en) | Photovoltaic device | |
| CN108886068B (en) | Solar cell, solar cell module, and method for manufacturing solar cell | |
| CN105122467A (en) | Photovoltaic element and manufacturing method thereof | |
| US20120042927A1 (en) | Photovoltaic device front contact | |
| CN103367472B (en) | A T-shaped top electrode back reflective thin film solar cell | |
| JP2008305945A (en) | Substrate for thin film solar cell and manufacturing method of the same, and manufacturing method of thin film solar cell | |
| CN120076464A (en) | Thin film solar cell module interconnection structure and preparation method thereof | |
| JP2002299658A (en) | Photovoltaic element | |
| JP3653379B2 (en) | Photovoltaic element | |
| JP2011187495A (en) | Solar battery module | |
| JP5405923B2 (en) | Photoelectric conversion element and manufacturing method thereof | |
| JP2004153028A (en) | Thin film photoelectric conversion device | |
| JP2007287926A (en) | Integrated thin film photoelectric conversion device, and method of manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20051227 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070316 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070327 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070731 |