JP3152005B2 - Manufacturing method of semiconductor acceleration sensor - Google Patents
Manufacturing method of semiconductor acceleration sensorInfo
- Publication number
- JP3152005B2 JP3152005B2 JP08408293A JP8408293A JP3152005B2 JP 3152005 B2 JP3152005 B2 JP 3152005B2 JP 08408293 A JP08408293 A JP 08408293A JP 8408293 A JP8408293 A JP 8408293A JP 3152005 B2 JP3152005 B2 JP 3152005B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- mass
- substrate
- acceleration sensor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 86
- 230000001133 acceleration Effects 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 111
- 238000005304 joining Methods 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 18
- 239000004020 conductor Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、静電容量の変化を利用
する半導体式加速度センサの製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor type acceleration sensor utilizing a change in capacitance.
【０００２】[0002]
【従来の技術】半導体式加速度センサの一般的な構造が
図４に示されている。同図において、可動電極として機
能する四角体の質量部１は、その一辺１ａ側の中央部よ
り梁２に連結されており、この梁２は梁支持部５により
支持されている。質量部１の相対向する二辺１ｂ，１ｃ
側には間隙４を介して固定部３ａ，３ｂが配設されてい
る。これら質量部１と、梁２と、梁支持部５と、固定部
３ａ，３ｂとはＳｉ半導体基板を用いて形成されて、ベ
ース基板９としてのガラス基板上に配置され、梁支持部
５と固定部３ａ，３ｂの各底面はガラス基板に固定され
ている。また、このガラス基板上には固定部３ａ，３ｂ
に接続して導体パターン６ａ，６ｂが、また、梁支持部
５に接続して導体パターン６ｃが形成されており、この
導体パターン６ａ，６ｂ，６ｃの端末部分７ａ，７ｂ，
７ｃを利用してリード線（図示せず）が接続され、加速
度又は振動の検出信号が取り出されるよう構成されてい
る。2. Description of the Related Art A general structure of a semiconductor acceleration sensor is shown in FIG. In FIG. 1, a quadrangular mass part 1 functioning as a movable electrode is connected to a beam 2 from the center on one side 1 a thereof, and the beam 2 is supported by a beam support 5. Opposite two sides 1b, 1c of mass part 1
Fixed portions 3a and 3b are arranged on the side with a gap 4 therebetween. The mass part 1, the beam 2, the beam supporting part 5, and the fixing parts 3a and 3b are formed using a Si semiconductor substrate, and are arranged on a glass substrate as a base substrate 9, and the beam supporting part 5 The bottom surfaces of the fixing portions 3a and 3b are fixed to a glass substrate. The fixing portions 3a and 3b are provided on the glass substrate.
And the conductor patterns 6a and 6b are connected to the beam support portion 5 to form conductor patterns 6c. The end portions 7a, 7b and 7c of the conductor patterns 6a, 6b and 6c are formed.
A lead wire (not shown) is connected by using 7c, so that a detection signal of acceleration or vibration is taken out.
【０００３】この導体パターン６ａ，６ｂ，６ｃは、下
層がクロム層で上層が金層の二層構造となっており、こ
の導体パターン６ａ，６ｂ，６ｃとガラス基板との間に
は酸化シリコン等の絶縁層８が形成されて、質量部１と
梁２がガラス基板と接触せず、十分浮遊状態となるよう
構成されている。The conductor patterns 6a, 6b and 6c have a two-layer structure in which the lower layer is a chromium layer and the upper layer is a gold layer, and silicon oxide or the like is provided between the conductor patterns 6a, 6b and 6c and the glass substrate. Is formed so that the mass part 1 and the beam 2 do not come into contact with the glass substrate and are in a sufficiently floating state.
【０００４】以上のように構成されている半導体式加速
度センサでは、加速度を受けると質量部１が変位し、こ
の変位による質量部１と固定部３ａ，３ｂとの間の静電
容量の変化が加速度又は振動検出信号として出力され
る。[0004] In the semiconductor acceleration sensor having the above-described structure, the mass portion 1 is displaced when an acceleration is applied, and a change in the capacitance between the mass portion 1 and the fixed portions 3a and 3b due to the displacement is caused. It is output as an acceleration or vibration detection signal.
【０００５】このような構成をした半導体式加速度セン
サの従来の製造方法が図３に示されている。この図３の
左側列は図４のＡ−Ａ′断面を表し、右側列は図４のＢ
−Ｂ′断面を表している。まず、同図の（ａ）に示すよ
うに、ベース基板９としてのガラス基板上の導体パター
ン６ａ，６ｂ，６ｃ形成部分に酸化シリコン等の絶縁層
８をＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏ
ｓｉｔｉｏｎ）製法等により形成し、さらに、この絶縁
層８の上部にクロムを蒸着させてクロム層（図示せず）
を形成し、さらに、このクロム層の上部に金層又は金の
合金層（図示せず）を形成して、これらクロム層と金層
との２層からなる導体パターン６ａ，６ｂ，６ｃを形成
する。FIG. 3 shows a conventional method of manufacturing a semiconductor acceleration sensor having such a configuration. The left column of FIG. 3 shows a section taken along line AA ′ of FIG. 4, and the right column of FIG.
-B 'section is shown. First, as shown in FIG. 2A, an insulating layer 8 such as silicon oxide is formed on a portion of a glass substrate serving as a base substrate 9 where conductive patterns 6a, 6b and 6c are formed by CVD (Chemical Vapor Depo).
and a chromium layer (not shown) formed by depositing chromium on the insulating layer 8.
Is formed, and a gold layer or a gold alloy layer (not shown) is formed on the chromium layer to form conductor patterns 6a, 6b and 6c composed of two layers of the chromium layer and the gold layer. I do.
【０００６】次に、このように導体パターン６ａ，６
ｂ，６ｃを形成したガラス基板の上部に同図の（ｂ）に
示す如く低抵抗のＳｉ半導体基板10を配置し、この状態
で約400 ℃の高温炉で加熱すると、Ｓｉ半導体基板10の
裏面と導体パターン６ａ，６ｂ，６ｃの金属部分が共晶
合金化し、Ｓｉ半導体基板10とガラス基板とが共晶接合
する。Next, the conductor patterns 6a, 6
When a low-resistance Si semiconductor substrate 10 is placed on the glass substrate on which the b and 6c are formed as shown in FIG. 3B and heated in a high-temperature furnace at about 400 ° C. in this state, the back surface of the Si semiconductor substrate 10 The metal portions of the conductor patterns 6a, 6b, and 6c form an eutectic alloy, and the Si semiconductor substrate 10 and the glass substrate are eutectic bonded.
【０００７】次に、同図の（ｃ）に示すようにＳｉ半導
体基板10を固定部３ａ，３ｂ等の所望の厚さとなるまで
研磨又はエッチングにて薄肉化加工する。この薄肉化し
たＳｉ半導体基板10の上部表面にマスク（図示せず）と
してのフォトレジスト層や酸化膜層を形成し、エッチン
グ加工等のフォトリソグラフィ加工により、同図の
（ｄ）に示すように溝11を形成することによって質量部
１、固定部３ａ，３ｂ、梁２、梁支持部５を形造る。こ
の質量部１と固定部３ａ，３ｂとは低抵抗のＳｉ半導体
基板10で形成されているので、質量部１は可動電極とし
て、固定部３ａ，３ｂは固定電極として機能し、半導体
式加速度センサが作製される。Next, as shown in FIG. 1C, the thickness of the Si semiconductor substrate 10 is reduced by polishing or etching until the thickness of the fixing portions 3a, 3b and the like becomes a desired thickness. A photoresist layer or an oxide film layer as a mask (not shown) is formed on the upper surface of the thinned Si semiconductor substrate 10, and is subjected to photolithography such as etching, as shown in FIG. By forming the groove 11, the mass part 1, the fixing parts 3a and 3b, the beam 2, and the beam supporting part 5 are formed. Since the mass portion 1 and the fixed portions 3a and 3b are formed of a low-resistance Si semiconductor substrate 10, the mass portion 1 functions as a movable electrode, and the fixed portions 3a and 3b function as fixed electrodes. Is produced.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、上記従
来の半導体式加速度センサの製造方法においては、Ｓｉ
半導体基板10を薄肉加工した状態で、すなわち、Ｓｉ半
導体基板10の機械的強度が小さい状態でエッチング等の
フォトリソグラフィ加工等の処理を行うのでＳｉ半導体
基板10の取り扱いに細心の注意を要するため、作業性の
大変悪いものであった。また、機械的強度の小さい状態
でＳｉ半導体基板10をハンドリングするため、薄肉化さ
れたＳｉ半導体基板10がこのような処理過程で破損する
という問題が多く発生し、歩留まりが悪くなり、製作コ
ストも高いものであった。However, in the above-mentioned conventional method of manufacturing a semiconductor type acceleration sensor, Si
Since processing such as photolithography processing such as etching is performed in a state where the semiconductor substrate 10 is thin-walled, that is, in a state where the mechanical strength of the Si semiconductor substrate 10 is small, careful handling of the Si semiconductor substrate 10 is required, The workability was very poor. In addition, since the Si semiconductor substrate 10 is handled in a state where the mechanical strength is small, there are many problems that the thinned Si semiconductor substrate 10 is damaged in such a process, the yield is reduced, and the manufacturing cost is reduced. It was expensive.
【０００９】また、高抵抗のＳｉ半導体基板10を用いる
場合には、図３の（ｄ）の状態で質量部１と固定部３
ａ，３ｂの対向面に拡散処理又は金属蒸着処理を行うの
で、ベース基板９に耐熱性の低いガラス基板を用いた場
合には、これらの処理に伴う高温加熱処理によりガラス
基板が溶融してしまうため、ベース基板９としてガラス
基板を使用することができないという問題があった。When a high-resistance Si semiconductor substrate 10 is used, the mass unit 1 and the fixing unit 3 are placed in the state shown in FIG.
Since a diffusion process or a metal deposition process is performed on the opposing surfaces of a and 3b, when a glass substrate having low heat resistance is used for the base substrate 9, the glass substrate is melted by a high-temperature heating process accompanying these processes. Therefore, there is a problem that a glass substrate cannot be used as the base substrate 9.
【００１０】本発明は上記従来の課題を解決するために
なされたものであり、その目的は、高抵抗のＳｉ半導体
基板を用いた場合にもベース基板として支障なくガラス
を使用でき、また、取り扱いが容易で作業性の良い、か
つ、歩留まりが良く低コストの半導体式加速度センサの
製造方法を提供することにある。The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to use glass as a base substrate without any problem even when a high-resistance Si semiconductor substrate is used. It is an object of the present invention to provide a method of manufacturing a semiconductor acceleration sensor which is easy, has good workability, and has good yield and low cost.
【００１１】[0011]
【課題を解決するための手段】本発明は上記目的を達成
するために次のように構成されている。すなわち、本発
明は、Ｓｉ半導体基板を用いて、質量部と、この質量部
の隣の固定部と、質量部に対して間隔を介して配置され
る梁支持部と、質量部を梁支持部に連結する梁とが形成
され、基板に平行な方向の加速度による質量部の変位を
質量部側と固定部側との容量変化によって検出する半導
体式加速度センサの製造方法において、Ｓｉ半導体基板
面に後で質量部と固定部と梁支持部と梁になる部位の周
りに沿って凹部を形成しておき、このＳｉ半導体基板を
前記凹部形成面側の固定部と梁支持部になる面を接合面
としてベース基板の面に接合一体化し、然る後に、Ｓｉ
半導体基板を表面側から凹部の底部に達するまで薄肉化
加工して固定部と質量部を分離し、ベース基板を固定台
としてその上面に質量部と固定部と梁支持部と梁とを形
成することを特徴として構成されている。The present invention is configured as follows to achieve the above object. In other words, the present invention provides a mass part, a fixed part next to the mass part, a beam supporting part arranged at an interval from the mass part, and a beam supporting part using the Si semiconductor substrate. In the method of manufacturing a semiconductor acceleration sensor for detecting displacement of a mass part due to acceleration in a direction parallel to the substrate by a change in capacitance between the mass part side and the fixed part side, a beam connected to the Si semiconductor substrate surface is formed. A concave portion is formed around a portion which will be a mass portion, a fixing portion, a beam supporting portion, and a beam later, and this Si semiconductor substrate is joined to the fixing portion on the concave portion forming surface side and a surface to be a beam supporting portion. The surface is bonded and integrated with the surface of the base substrate.
The semiconductor substrate is thinned from the front surface side to the bottom of the concave portion to separate the fixed portion and the mass portion, and the mass portion, the fixed portion, the beam support portion, and the beam are formed on the upper surface using the base substrate as a fixed base. It is configured as a feature.
【００１２】[0012]
【作用】Ｓｉ半導体基板面上に、後で質量部と固定部と
梁支持部と梁になる部分を形造るように凹部を形成し、
この状態で凹部形成面とベース基板を重ね合わせて、凹
部形成面側の固定部と梁支持部になる部分を接合面と
し、Ｓｉ半導体基板とベース基板とを接合一体化する。
その後、Ｓｉ半導体基板の表面側から、凹部の底部に達
するまで薄肉化加工を行い、固定部と質量部とを分離
し、梁と梁支持部を形造り、半導体式加速度センサが作
製される。ここに凹部は、加速度センサ内部の各構成部
分である質量部と固定部と梁支持部と梁を区画し、その
輪郭を形成するものであり、後工程に進む前にこれら各
構成部分の適否を確認することができ、また、Ｓｉ半導
体基板の薄肉化加工後には、質量部が変位する空間とな
り、固定部と質量部の間に静電容量を形成する空間とな
る。 A concave portion is formed on the surface of the Si semiconductor substrate so as to form a portion which will be a mass portion, a fixed portion, a beam support portion and a beam later.
In this state, the concave portion forming surface and the base substrate are overlapped, and the portion serving as the fixing portion and the beam supporting portion on the concave portion forming surface side is used as a bonding surface, and the Si semiconductor substrate and the base substrate are bonded and integrated.
Thereafter, a thinning process is performed from the surface side of the Si semiconductor substrate until reaching the bottom of the concave portion, the fixed portion and the mass portion are separated, and a beam and a beam support portion are formed, thereby producing a semiconductor acceleration sensor. Here, the concave portions are the respective components inside the acceleration sensor.
The beam is divided into a mass part, a fixed part, a beam support part, and a beam.
It forms an outline, and each of these
The suitability of the components can be confirmed, and the Si semiconductor
After the body substrate is thinned, it becomes a space where the mass part is displaced.
Space between the fixed part and the mass part.
You.
【００１３】[0013]
【実施例】以下、本発明の実施例を図面に基づいて説明
する。図１には、本発明に係る半導体式加速度センサの
製造方法の第１の実施例が示されている。本実施例で作
製する半導体式加速度センサは図４に示すものと同じ構
成のものである。図１において、左側列には図４のＡ−
Ａ′断面部分が表されており、右側列には図４のＢ−
Ｂ′断面部分が表されている。同図において、Ｓｉ半導
体基板10は低抵抗のものを用いている。Ｓｉ半導体基板
10の裏面には、後工程で質量部１と固定部３ａ，３ｂと
梁２と梁支持部５が形成される部位の周囲に沿って、エ
ッチング等により凹部12を同図の（ａ）のように形成す
る。一方、ベース基板９としてのガラス基板上の導体パ
ターン６ａ，６ｂ，６ｃ形成部分に、まず、ＰＥＣＶＤ
製法等により酸化シリコン等の絶縁層８を形成する。こ
の絶縁層８はＳｉ半導体基板10とガラス基板との間隔を
十分にもたせて質量部１と梁２とを移動し易くするため
のものである。この絶縁層８の上面に、まず、クロム層
（図示せず）を、次に金層（図示せず）を蒸着等により
形成することにより、これらクロム層と金層の２層から
なる導体パターン６ａ，６ｂ，６ｃが形成される。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a first embodiment of a method for manufacturing a semiconductor acceleration sensor according to the present invention. The semiconductor type acceleration sensor manufactured in this embodiment has the same configuration as that shown in FIG. In FIG. 1, A-
A 'cross section is shown.
The section B 'is shown. In FIG. 1, a Si semiconductor substrate 10 having a low resistance is used. Si semiconductor substrate
A recess 12 is formed on the back surface of the base 10 by etching or the like along the periphery of the portion where the mass part 1, the fixing parts 3a, 3b, the beam 2, and the beam supporting part 5 are formed in a later step. It is formed as follows. On the other hand, first, PECVD is formed on a portion of the glass substrate serving as the base substrate 9 where the conductor patterns 6a, 6b, and 6c are formed.
An insulating layer 8 of silicon oxide or the like is formed by a manufacturing method or the like. The insulating layer 8 is provided to allow a sufficient distance between the Si semiconductor substrate 10 and the glass substrate to easily move the mass 1 and the beam 2. A chromium layer (not shown) is first formed on the upper surface of the insulating layer 8, and then a gold layer (not shown) is formed by vapor deposition or the like. 6a, 6b and 6c are formed.
【００１４】次に、同図の（ｂ）に示すようにＳｉ半導
体基板10の凹部12形成面とガラス基板の導体パターン６
ａ，６ｂ，６ｃ形成面とを重ね合わせ、基板10側の固定
部３ａ，３ｂと梁支持部５になる面を接合面として、こ
の接合面をガラス基板の導体パターン６ａ，６ｂ，６ｃ
面の所定位置に配置して、この状態で約400 ℃の高温炉
に入れて加熱処理を行い、ＳｉとＡｕ（金）を共晶合金
化し、Ｓｉ半導体基板10とガラス基板とを共晶接合によ
り一体化する。Next, as shown in FIG. 1B, the surface of the Si semiconductor substrate 10 where the recess 12 is formed and the conductor pattern 6 of the glass substrate are formed.
a, 6b, and 6c are superimposed on each other, and the surfaces serving as the fixing portions 3a, 3b on the substrate 10 and the beam supporting portion 5 are used as bonding surfaces.
In this state, it is placed in a high-temperature furnace at about 400 ° C. and heat-treated to form a eutectic alloy of Si and Au (gold), and eutectic bonding between the Si semiconductor substrate 10 and the glass substrate To be integrated.
【００１５】次に、Ｓｉ半導体基板１０の表面側から凹
部１２の底部１３に達するまでエッチング等の薄肉化加
工処理を行い、同図の（ｃ）のように質量部１と固定部
３ａ，３ｂとを分離し、梁２と梁支持部５とを形造る。
質量部１と固定部３ａ，３ｂとは、低抵抗のＳｉ半導体
基板１０で形成されているので質量部１は可動電極とし
て、固定部３ａ，３ｂは固定電極としての機能をもち、
導体パターン６ａ，６ｂ，６ｃの端末部分７ａ，７ｂ，
７ｃ部分にリード線（図示せず）が接続されて加速度セ
ンサが作製される。Next, a thinning process such as etching is performed from the surface side of the Si semiconductor substrate 10 to the bottom 13 of the concave portion 12, and the mass portion 1 and the fixing portions 3a and 3b are provided as shown in FIG. And the beam 2 and the beam support 5 are formed.
Since the mass part 1 and the fixed parts 3a and 3b are formed of a low-resistance Si semiconductor substrate 10, the mass part 1 has a function as a movable electrode, and the fixed parts 3a and 3b have a function as fixed electrodes.
Terminal portions 7a, 7b of the conductor patterns 6a, 6b, 6c,
A lead wire (not shown) is connected to the portion 7c to complete the acceleration sensor.
【００１６】この実施例によれば、Ｓｉ半導体基板１０
の薄肉加工処理を図１の（ｃ）に示すように最後の工程
で行うので、同図の（ａ）のようにエッチング処理等で
後の質量部１、固定部３ａ，３ｂ、梁２、梁支持部５と
なる部の周囲に沿って凹部１２を形成し、同図の（ｂ）
のようにガラス基板とＳｉ半導体基板１０とを共晶接合
により一体化する処理工程では、Ｓｉ半導体基板１０は
肉厚で機械的強度の大きい状態で取り扱われるため、非
常に取り扱い易くなり、作業性が向上し、従来のような
Ｓｉ半導体基板１０の破損が防止できる。したがって、
歩留まりも良くなり、製作コストも低減する。According to this embodiment, the Si semiconductor substrate 10
1 is performed in the last step as shown in FIG. 1 ( c ). Therefore, as shown in FIG. 1 (a), the mass part 1, the fixed parts 3a, 3b, the beam 2, A concave portion 12 is formed along the periphery of the portion to be the beam support portion 5, and FIG.
In the processing step of integrating the glass substrate and the Si semiconductor substrate 10 by eutectic bonding as described above, the Si semiconductor substrate 10 is handled in a state of being thick and having high mechanical strength. Is improved, and breakage of the conventional Si semiconductor substrate 10 can be prevented. Therefore,
The yield is improved and the production cost is reduced.
【００１７】図２には、本発明に係る半導体式加速度セ
ンサの第２の実施例が示されている。この実施例では、
Ｓｉ半導体基板10として高抵抗のものを使用している。
まず、Ｓｉ半導体基板10の裏面に凹部12を、ベース基板
９としてのガラス基板に絶縁層８と導体パターン６ａ，
６ｂ，６ｃを前記第１の実施例で示した図１の（ａ）と
同様に形成する。次に、質量部１と固定部３ａ，３ｂを
電極として機能させるために、図２の（ｂ）のように、
Ｓｉ半導体基板10の凹部12の形成面全面にＰ（リン）や
Ｂ（ホウ素）を拡散して低抵抗層14を形成するか、若し
くは凹部12の形成面全面に銅や金等の金属を蒸着させて
金属層15を形成し、この低抵抗層14又は金属層15を電極
層とする。その後、これら低抵抗層14又は金属層15形成
面側の固定部３ａ，３ｂと梁支持部５となる部分を接合
面とし、同図の（ｃ）のようにＳｉ半導体基板10とガラ
ス基板とを重ね合わせて接合一体化しており、それ以外
の構成は前記実施例同様である。FIG. 2 shows a second embodiment of the semiconductor type acceleration sensor according to the present invention. In this example,
A high-resistance Si semiconductor substrate 10 is used.
First, the concave portion 12 is formed on the back surface of the Si semiconductor substrate 10, and the insulating layer 8 and the conductive pattern 6 a are formed on the glass substrate as the base substrate 9.
6b and 6c are formed in the same manner as in FIG. 1A shown in the first embodiment. Next, in order to make the mass part 1 and the fixing parts 3a and 3b function as electrodes, as shown in FIG.
P (phosphorus) or B (boron) is diffused over the entire surface of the concave portion 12 of the Si semiconductor substrate 10 to form the low-resistance layer 14, or a metal such as copper or gold is deposited over the entire surface of the concave portion 12 Thus, a metal layer 15 is formed, and the low resistance layer 14 or the metal layer 15 is used as an electrode layer. Thereafter, the portions that become the fixing portions 3a and 3b and the beam support portion 5 on the surface on which the low-resistance layer 14 or the metal layer 15 is formed are used as bonding surfaces, and as shown in FIG. Are overlapped and joined and integrated, and other configurations are the same as those of the above-described embodiment.
【００１８】この実施例によれば、半導体式加速度セン
サが高抵抗のＳｉ半導体基板10を利用して作製できるた
め、この高抵抗のＳｉ半導体基板10上に、低抵抗のＳｉ
半導体基板10上では形成不可能であった信号処理回路等
を形成できることとなる。また、質量部１と固定部３
ａ，３ｂを電極として機能させるための拡散処理や金属
蒸着処理が、Ｓｉ半導体基板10とガラス基板とを接合一
体化する前に行われるので、Ｓｉ半導体基板10だけが拡
散処理や金属蒸着処理による高温加熱を受けることとな
る。したがって、ベース基板９は高温加熱処理を受けな
いので、従来のように、ベース基板９として通常のガラ
ス基板を支障なく使用できる。さらに、エッチング加工
や接合加工がＳｉ半導体基板10が肉厚で機械的強度の大
きい状態で行われるので、これらの加工処理においてＳ
ｉ半導体基板10が取り扱い易くなり、作業性が向上する
等、前記第１の実施例同様の効果を奏する。According to this embodiment, since the semiconductor type acceleration sensor can be manufactured using the high-resistance Si semiconductor substrate 10, the low-resistance Si semiconductor substrate 10 is provided on the high-resistance Si semiconductor substrate 10.
A signal processing circuit or the like that cannot be formed on the semiconductor substrate 10 can be formed. Also, the mass part 1 and the fixing part 3
Since the diffusion process and the metal deposition process for making a and 3b function as electrodes are performed before joining and integrating the Si semiconductor substrate 10 and the glass substrate, only the Si semiconductor substrate 10 is formed by the diffusion process or the metal deposition process. It will be subjected to high temperature heating. Therefore, since the base substrate 9 is not subjected to the high-temperature heat treatment, an ordinary glass substrate can be used as the base substrate 9 without any trouble as in the related art. Further, since the etching process and the joining process are performed in a state where the Si semiconductor substrate 10 is thick and has high mechanical strength, S
The same effects as in the first embodiment are obtained, for example, the i-semiconductor substrate 10 is easy to handle and the workability is improved.
【００１９】なお、本発明は上記実施例に限定されるこ
とはなく、様々な実施の態様を採り得る。例えば、上記
実施例では、ガラス基板とＳｉ半導体基板10との接合を
共晶接合にて行ったが、陽極接合等他の接合方法にて行
ってもよい。The present invention is not limited to the above embodiment, but can take various embodiments. For example, in the above embodiment, the glass substrate and the Si semiconductor substrate 10 are bonded by eutectic bonding, but may be bonded by another bonding method such as anodic bonding.
【００２０】また、上記第２の実施例では、低抵抗層14
又は金属層15をＳｉ半導体基板10の片面全部に形成した
が、質量部１と固定部３ａ，３ｂの各対向面だけに形成
するようにしてもよい。In the second embodiment, the low resistance layer 14
Alternatively, although the metal layer 15 is formed on one entire surface of the Si semiconductor substrate 10, the metal layer 15 may be formed only on the opposing surfaces of the mass unit 1 and the fixing units 3a and 3b.
【００２１】[0021]
【発明の効果】本発明は、Ｓｉ半導体基板の薄肉化加工
を行う前に、Ｓｉ半導体基板面のエッチング等による凹
部形成や、Ｓｉ半導体基板とベース基板との接合を行う
ので、Ｓｉ半導体基板が肉厚で機械的強度の大きい状態
で、これら凹部形成処理や接合処理が施される。したが
って、これら処理において、Ｓｉ半導体基板が取り扱い
易くなり、作業性が向上する。また、Ｓｉ半導体基板の
破損を防止できるため、歩留まりも良くなり、作製コス
トも低減する。また、Ｓｉ半導体基板とベース基板との
接合前に、Ｓｉ半導体基板に加速度センサ内部の各構成
部分である質量部と固定部と梁支持部と梁を区画する凹
部を形成するので、加速度センサ内部の各構成部分の輪
郭が明確になり、後工程に進む前にこれら各構成部分の
適否を確認することができ、加速度センサ製造の歩留ま
りを向上させることができる。 According to the present invention, a concave portion is formed by etching the surface of the Si semiconductor substrate or a bonding between the Si semiconductor substrate and the base substrate is performed before the thinning process of the Si semiconductor substrate. The concave portion forming process and the joining process are performed in a state where the thickness is large and the mechanical strength is large. Therefore, in these processes, the Si semiconductor substrate is easy to handle, and workability is improved. In addition, since the Si semiconductor substrate can be prevented from being damaged, the yield is improved and the manufacturing cost is reduced. In addition, between the Si semiconductor substrate and the base substrate
Before bonding, each component inside the acceleration sensor
The concave part that divides the mass part, the fixed part, the beam support part, and the beam
Part, so that the ring of each component inside the acceleration sensor
Guo is clearly defined, and each of these components
Compliance can be checked, and the yield of
Can be improved.
【００２２】さらに、Ｓｉ半導体基板とベース基板との
接合前にＳｉ半導体基板面に各種の高温処理が可能であ
るので、Ｓｉ半導体基板に高抵抗のものを用いて、この
質量部と固定部となる部分を電極として機能させるため
の拡散処理や蒸着処理等の高温加熱処理を行うことがで
きる。このように、高抵抗のＳｉ半導体基板を用いた場
合には、低抵抗のＳｉ半導体基板面には形成不可能であ
った信号処理回路等を高抵抗のＳｉ半導体基板面に形成
できることとなる。さらに、これらの拡散処理や蒸着処
理での高温加熱処理をベース基板が受けることがない。
したがって、ベース基板に通常のガラス基板を支障なく
使用することができる。また、このように、高抵抗のＳ
ｉ半導体基板を用いる場合も、低抵抗のＳｉ半導体基板
を用いたときと同様に、Ｓｉ半導体基板が肉厚の状態で
凹部形成や接合処理が施されるので、Ｓｉ半導体基板が
取り扱い易くなり、作業性が良く、歩留まりの良いもの
となる。Further, since various high-temperature treatments can be performed on the surface of the Si semiconductor substrate before the bonding of the Si semiconductor substrate and the base substrate, a high-resistance Si semiconductor substrate is used, and the mass part and the fixing part are separated. A high-temperature heat treatment such as a diffusion treatment or a vapor deposition treatment for causing the portion to function as an electrode can be performed. As described above, when a high-resistance Si semiconductor substrate is used, a signal processing circuit or the like that cannot be formed on the low-resistance Si semiconductor substrate surface can be formed on the high-resistance Si semiconductor substrate surface. Further, the base substrate is not subjected to the high-temperature heat treatment in the diffusion treatment or the vapor deposition treatment.
Therefore, a normal glass substrate can be used as the base substrate without any trouble. Also, as described above, the high-resistance S
Also in the case of using the i semiconductor substrate, similarly to the case of using the low-resistance Si semiconductor substrate, the concave portion formation and the bonding process are performed in a state where the Si semiconductor substrate is thick, so that the Si semiconductor substrate becomes easy to handle, Workability is good and yield is good.
【図１】本発明に係る半導体式加速度センサの製造方法
の第１の実施例を示す製造工程図である。FIG. 1 is a manufacturing process diagram showing a first embodiment of a method for manufacturing a semiconductor acceleration sensor according to the present invention.
【図２】本発明に係る半導体式加速度センサの製造方法
の第２の実施例を示す製造工程図である。FIG. 2 is a manufacturing process diagram showing a second embodiment of the method for manufacturing a semiconductor acceleration sensor according to the present invention.
【図３】半導体式加速度センサの従来の製造方法を示す
説明図である。FIG. 3 is an explanatory view showing a conventional method of manufacturing a semiconductor acceleration sensor.
【図４】半導体式加速度センサの構成図である。FIG. 4 is a configuration diagram of a semiconductor acceleration sensor.
１ 質量部 ２ 梁 ３ａ，３ｂ 固定部 ５ 梁支持部 ９ ベース基板 10 Ｓｉ半導体基板 12 凹部 13 凹部の底部 DESCRIPTION OF SYMBOLS 1 Mass part 2 Beam 3a, 3b Fixed part 5 Beam support part 9 Base substrate 10 Si semiconductor substrate 12 Depression 13 Bottom of depression
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G01P 15/125 H01L 29/84 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. 7 , DB name) G01P 15/125 H01L 29/84
Claims (1)
の質量部の隣の固定部と、質量部に対して間隔を介して
配置される梁支持部と、質量部を梁支持部に連結する梁
とが形成され、基板に平行な方向の加速度による質量部
の変位を質量部側と固定部側との容量変化によって検出
する半導体式加速度センサの製造方法において、Ｓｉ半
導体基板面に後で質量部と固定部と梁支持部と梁になる
部位の周りに沿って凹部を形成しておき、このＳｉ半導
体基板を前記凹部形成面側の固定部と梁支持部になる面
を接合面としてベース基板の面に接合一体化し、然る後
に、Ｓｉ半導体基板を表面側から凹部の底部に達するま
で薄肉化加工して固定部と質量部を分離し、ベース基板
を固定台としてその上面に質量部と固定部と梁支持部と
梁とを形成する半導体式加速度センサの製造方法。1. A mass part, a fixed part adjacent to the mass part, a beam support part disposed at an interval from the mass part, and a mass part as a beam support part using a Si semiconductor substrate. In a method of manufacturing a semiconductor type acceleration sensor for detecting displacement of a mass part due to acceleration in a direction parallel to the substrate based on a change in capacitance between the mass part side and the fixed part side, a connecting beam is formed on a surface of the Si semiconductor substrate. A concave portion is formed along the periphery of the mass portion, the fixing portion, the beam supporting portion, and the portion to be the beam by using the Si semiconductor substrate, and the surface serving as the fixing portion and the beam supporting portion on the concave portion forming surface side is joined to the joining surface. After that, the Si semiconductor substrate is thinned from the surface side to the bottom of the concave part to separate the fixed part and the mass part, and the base substrate is fixed on the upper surface as a fixed base. Semi-conductor forming mass, fixed part, beam support and beam Manufacturing method of body-type acceleration sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08408293A JP3152005B2 (en) | 1993-03-17 | 1993-03-17 | Manufacturing method of semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08408293A JP3152005B2 (en) | 1993-03-17 | 1993-03-17 | Manufacturing method of semiconductor acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06273441A JPH06273441A (en) | 1994-09-30 |
| JP3152005B2 true JP3152005B2 (en) | 2001-04-03 |
Family
ID=13820574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08408293A Expired - Fee Related JP3152005B2 (en) | 1993-03-17 | 1993-03-17 | Manufacturing method of semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3152005B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6563184B1 (en) * | 2000-08-01 | 2003-05-13 | Hrl Laboratories, Llc | Single crystal tunneling sensor or switch with silicon beam structure and a method of making same |
| US6630367B1 (en) * | 2000-08-01 | 2003-10-07 | Hrl Laboratories, Llc | Single crystal dual wafer, tunneling sensor and a method of making same |
| US6674141B1 (en) * | 2000-08-01 | 2004-01-06 | Hrl Laboratories, Llc | Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same |
| US6555404B1 (en) * | 2000-08-01 | 2003-04-29 | Hrl Laboratories, Llc | Method of manufacturing a dual wafer tunneling gyroscope |
| US6580138B1 (en) * | 2000-08-01 | 2003-06-17 | Hrl Laboratories, Llc | Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951510A (en) | 1988-07-14 | 1990-08-28 | University Of Hawaii | Multidimensional force sensor |
-
1993
- 1993-03-17 JP JP08408293A patent/JP3152005B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951510A (en) | 1988-07-14 | 1990-08-28 | University Of Hawaii | Multidimensional force sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06273441A (en) | 1994-09-30 |
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