JP2024111761A - Semiconductor manufacturing apparatus and method for manufacturing semiconductor device - Google Patents

Abstract

To provide a technique capable of reducing a change in the shape of applied paste.SOLUTION: A semiconductor manufacturing device includes a preform head having a syringe in which a UV-curable paste is stored and a nozzle provided at the tip of the syringe, a first UV irradiation unit, and a control unit configured to apply the paste from the nozzle onto a component of a semiconductor device and then irradiate the applied paste with UV light using the first UV irradiation unit before bonding a die onto the component.SELECTED DRAWING: Figure 7

Description

This disclosure relates to semiconductor manufacturing equipment and can be applied, for example, to die bonders that use resin paste as a bonding material.

As part of the manufacturing process for semiconductor devices, a die separated from a wafer is picked up and bonded to a member coated with paste. Here, the paste is a liquid adhesive, such as a resin paste.

JP 2022-150045 A

The shape of the applied paste may change.

The objective of the present disclosure is to provide a technology that can reduce changes in the shape of the applied paste. Other objectives and novel features will become apparent from the description of this specification and the accompanying drawings.

A brief outline of a representative aspect of the present disclosure is as follows. That is, the semiconductor manufacturing apparatus includes a preform head having a syringe that stores a UV-curable paste and a nozzle provided at the tip of the syringe, a first UV irradiation unit, and a control unit configured to apply the paste from the nozzle onto a component of a semiconductor device and then irradiate the applied paste with UV light using the first UV irradiation unit before bonding a die onto the component.

This disclosure makes it possible to reduce changes in the shape of the applied paste.

FIG. 1 is a top view showing an outline of a die bonder according to an embodiment. FIG. 2 is a cross-sectional view showing a schematic of the die supply section shown in FIG. FIG. 3 is a side view showing an outline of the preform part shown in FIG. FIG. 4 is a side view showing a schematic of the die supply section and bonding section shown in FIG. FIG. 5 is a flow chart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. FIG. 6 is a top view showing an example of the configuration of a substrate in the embodiment. FIG. 7 is a side view showing the configuration of the preform portion. FIG. 8 is a top view showing a state in which the paste is applied onto the semiconductor chip. FIG. 9 is a front view showing the optical system of the bonding section. FIG. 10 is a front view showing a UV irradiation unit in the first modified example. FIG. 11 is a front view showing the optical system of the preform part in the second modified example.

The following describes the embodiments with reference to the drawings. However, in the following description, the same components are given the same reference numerals and repeated description may be omitted. Note that in the drawings, the width, thickness, shape, etc. of each part may be shown diagrammatically compared to the actual embodiment in order to make the description clearer. Furthermore, the dimensional relationships between elements, the ratios of elements, etc. do not necessarily match between multiple drawings.

The configuration of a die bonder, which is one embodiment of a semiconductor manufacturing device, will be described with reference to Figures 1 to 4. Figure 1 is a top view showing an outline of the die bonder in the embodiment. Figure 2 is a cross-sectional view showing an outline of the die supply section shown in Figure 1. Figure 3 is a side view showing an outline of the preform section shown in Figure 1. Figure 4 is a side view showing an outline of the die supply section and bonding section shown in Figure 1.

As shown in FIG. 1, the die bonder 1 broadly comprises a die supply section 10, a preform section 90, a bonding section 40, a transport section 50, a substrate supply section 60, a substrate unloading section 70, and a control section (control device) 80. The Y2-Y1 direction is the front-to-rear direction of the die bonder 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-to-down direction. The die supply section 10 is located at the front of the die bonder 1, and the bonding section 40 is located at the rear.

As shown in FIG. 2, the die supply unit 10 has a wafer holder 12 that holds a wafer W, a push-up unit 13 that pushes up a die D from the wafer W, and a wafer recognition camera 24. The wafer W is adhered (attached) onto a dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is held by a wafer ring WR. The wafer W is, for example, a glass wafer or a semiconductor wafer, and the die D is a glass chip or a semiconductor chip. The semiconductor chip is, for example, a logic chip, a memory chip, an image sensor chip, etc.

The wafer holder 12 has an expand ring 15 that holds the wafer ring WR, and a support ring 17 that horizontally positions the dicing tape DT held by the wafer ring WR and having multiple dies D attached thereto. The push-up unit 13 is disposed inside the support ring 17. The control unit 80 moves the wafer holder 12 in the X1-X2 and Y1-Y2 directions using a wafer table (not shown), and moves the dies D to the position of the push-up unit 13 (pick-up position).

When the die D is pushed up, the wafer holder 12 lowers the expand ring 15 holding the wafer ring WR. As a result, the dicing tape DT held by the wafer ring WR is stretched, widening the gap between the dies D, and the push-up unit 13 pushes up the die D from below, improving the pick-up ability of the die D.

3, the preform section 90 has a syringe 91, a drive section (not shown) that moves the syringe 91 in the X1-X2, Y1-Y2 and Z1-Z2 directions, and a preform camera 94 that recognizes the application position of the syringe 91. The preform section 90 applies paste with the syringe 91 to the substrate S or the semiconductor chip HT mounted on the substrate S that is transported by the transport section 50. The syringe 91 is filled with paste, and is configured so that the paste is pushed out from the tip of the nozzle 92 by air pressure and applied to the substrate S or the semiconductor chip HT mounted on the substrate S. Here, the substrate S and the semiconductor chip HT mounted on the substrate S are also referred to as components of a semiconductor device. The semiconductor chip HT is, for example, a logic chip, a memory chip, an image sensor chip, etc. The substrate S is a wiring board, a lead frame, etc.

As shown in FIG. 4, the bonding section 40 has a bond head 41, a Y drive section (not shown), and a substrate recognition camera 44. The bond head 41 has a collet 42 that holds the die D by suction at its tip. The Y drive section moves the bond head 41 in the Y1-Y2 direction. The substrate recognition camera 44 captures an image of a position recognition mark (not shown) on the substrate S and recognizes the bond position. The bonding section 40 picks up the die D from the die supply section 10 and bonds it onto the substrate S being transported or onto the semiconductor chip HT mounted on the substrate S. At this time, the bond head 41 corrects the pickup position and posture based on the image data of the wafer recognition camera 24, and picks up the die D from the wafer W. Then, the bond head 41 bonds the die D onto the substrate S or onto the semiconductor chip HT mounted on the substrate S based on the image data of the substrate recognition camera 44.

As shown in FIG. 1, the transport section 50 has a transport lane 52 as a transport path along which the substrate S moves. With this configuration, the substrate S moves from the substrate supply section 60 along the transport lane 52 to the coating position, moves to the bonding position after coating, and after bonding, moves to the substrate unloading section 70, to which the substrate S is handed over.

The control unit 80 includes a memory that stores a program (software) that monitors and controls the operation of each of the above-mentioned parts of the die bonder 1, and a central processing unit (CPU) that executes the program stored in the memory.

Next, a method for manufacturing a semiconductor device using a die bonder in an embodiment will be described with reference to FIG. 5. FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. 1. Here, an example will be described in which a die D consisting of a glass chip is bonded to a substrate S on which a semiconductor chip HT is mounted. In the following description, the operation of each part constituting the die bonder 1 is controlled by a control unit 80.

(Wafer loading process: process S1)
A wafer ring WR is supplied to the die bonder 1. The supplied wafer ring WR is carried into a die supply unit 10. Here, a dicing tape DT to which a die D separated from a wafer W is attached is held on the wafer ring WR.

(Substrate loading process: process S2)
The substrate S on which the semiconductor chip HT is mounted is carried into the substrate supply unit 60 of the die bonder 1. After being carried in, the substrate S is carried to the preform stage 96 by the transport unit 50.

(Preforming process: process S3)
The preform camera 94 obtains an image of the surface of the semiconductor chip HT mounted on the substrate S before application, and the surface to which the paste PA is to be applied is confirmed. If there is no problem with the surface to be applied, the position of the substrate S supported by the preform stage 96 where the paste is to be applied is confirmed and positioned. Positioning is performed by pattern matching or the like, as with the bonding section 40.

Paste PA is applied in a frame shape (ring shape) from a nozzle 92 at the tip of a syringe 91 onto a semiconductor chip HT mounted on a substrate S. The paste PA is, for example, an ultraviolet (UV) curing adhesive. After application, the applied paste PA is photographed by a preform camera 94. Whether the paste PA has been applied accurately is confirmed based on the image acquired by photographing, and an inspection (visual inspection) of the applied paste PA is performed. If there are no problems with the application, the transport unit 50 transports the substrate S to the bond stage 46.

(Bonding process: process S4)
(Die positioning)
After step S1, a wafer table pitch operation is performed in which the wafer holder 12 is moved so that the desired die D can be picked up from the wafer W. The die D is photographed by the wafer recognition camera 24, and the die D is positioned and its surface inspected based on the image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder 1, and the die D is positioned. Note that the die position reference point is previously held at a predetermined position of the wafer holder 12 as the initial setting of the device. The image data is processed to inspect the surface of the die D.

(Substrate positioning)
After step S3, the substrate S placed on the bond stage 46 is photographed by the substrate recognition camera 44, and image data is acquired. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder 1. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as an initial setting for the device.

(Pickup & Bond)
The bond head 41 is translated and lowered to directly above the die D to be picked up, the suction position of the bond head 41 is corrected from the calculated amount of deviation of the die D, and the die D is vacuum-sucked by the collet 42. The bond head 41 that has sucked the die D from the wafer W bonds the die D to a predetermined location of the semiconductor chip HT mounted on the substrate S on the bond stage 46. The substrate recognition camera 44 photographs the die D bonded to the semiconductor chip HT, and based on the image data acquired by photographing, an inspection is performed to see whether the die D has been bonded at the desired location, etc.

(Substrate unloading process: process S5)
The substrate S with the die D bonded thereto is transported to the substrate unloading section 70. The substrate S with the die D bonded thereto is removed from the substrate unloading section 70. The substrate S is unloaded from the die bonder 1.

The application of paste and die bonding will be explained using Figure 6. Figure 6 is a top view showing an example of the substrate configuration in an embodiment.

As shown in FIG. 6, a plurality of product areas (hereinafter referred to as attachment areas P) that will ultimately become one package are formed in a grid pattern on the substrate S. A semiconductor chip HT is mounted on each attachment area P. In the following, an example in which the attachment areas P are arranged in eight rows, four in each row, will be described.

On the preform stage 96, paste is applied to the semiconductor chips HT by the syringe 91 in the Y2 direction, starting from the attachment area P in the first row of the first column (CN=1, RN=1) on the X1 side and Y1 side of the substrate S. Then, after applying paste to the semiconductor chips HT in the attachment area P in the fourth row of the first column (CN=1, RN=4) on the X1 side and Y2 side, the substrate S is moved to perform surface inspection and positioning from the X1 side to the second column. Then, paste is applied in the Y2 direction, starting from the top position (first row) of the second column from the X1 side (CN=2, RN=1). Then, paste is applied in the same manner, starting from the third column, fourth column, ..., eighth column.

After that, in the bond stage 46, the die D is bonded to the semiconductor chip HT by the bond head 41 in the Y2 direction from the attachment area P in the first row of the first column (CN=1, RN=1) on the X1 side and Y1 side of the substrate S. Then, after the die D is bonded to the semiconductor chip HT in the attachment area P in the fourth row of the first column (CN=1, RN=4) on the X1 side and Y2 side, the substrate S is moved to position the second column from the X1 side. Then, the die D is bonded in the Y2 direction from the top position (first row) of the second column from the X1 side (CN=2, RN=1). Then, the die D is bonded in the third column, fourth column, ..., eighth column in the same manner.

When applying a UV-curable paste, it is necessary to use a UV irradiator to irradiate the paste with UV light after bonding the die D to harden the paste. For example, after paste is applied to all attachment areas P (semiconductor chips HT) of the substrate S on the preform stage 96, the substrate S is transported to the bond stage 46, and the die D is bonded to all attachment areas P (semiconductor chips HT). The substrate S is then removed from the die bonder 1 and UV irradiation is performed.

The time from bonding to UV irradiation differs significantly between the first row (CN=1) and the last row (CN=8) of substrate S, and there is concern that the weight of die D will cause the paste shape to change, resulting in a deterioration in product quality.

In addition, after the die D is bonded, the substrate S is transported to the substrate unloading section 70 before UV irradiation, so there is a possibility that the paste PA and the bonded die D may become misaligned due to the impact during transportation. This impact during transportation can be avoided by slowing down the transport speed, but this will reduce productivity.

Therefore, in this embodiment, UV irradiation is performed at least either after application and before transport (before bonding) or after bonding and before transport. This will be explained using Figures 7 to 9. Figure 7 is a side view showing the configuration of the preform section. Figure 8 is a top view showing the state in which paste has been applied onto the semiconductor chip. Figure 9 is a front view showing the optical system of the bonding section.

As shown in FIG. 7, the preform section 90 includes a syringe 91, a nozzle 92, a nozzle holder 93, a preform stage 96, and a UV irradiation unit (first UV irradiation unit) 97. The syringe 91 contains paste. A nozzle 92 is provided at the bottom of the syringe 91. The nozzle 92 and the UV irradiation unit 97 are held by the nozzle holder 93. The UV irradiation unit 97 is disposed on the Y1 side of the nozzle 92. The nozzle holder 93 is moved in the X1-X2 direction, the Y1-Y2 direction, and the Z1-Z2 direction by a drive unit. The syringe 91, the nozzle 92, and the nozzle holder 93 form a preform head. The UV irradiation unit 97 may be included in the preform head. With this configuration, the paste can be irradiated with UV on the preform stage 96. This makes it possible to irradiate the paste with UV before bonding.

The UV irradiation unit 97 is equipped with a UV spot light or a UV fiber laser. As shown in FIG. 8, the UV irradiation unit 97 applies UV light to the four corners of the annular paste PA in a plan view with pinpoint accuracy. The UV irradiation unit 97 applies UV light at the point (timing) when the paste is applied to one row or one tab (one attachment area P) of the substrate. This temporarily hardens the paste PA and temporarily attaches it to the semiconductor chip HT, preventing the paste from dripping.

As shown in FIG. 9, the optical system of the bonding section 40 includes a substrate recognition camera 44 and at least one of a coaxial lighting device 45 and an oblique lighting device 48. The coaxial lighting device 45 can irradiate the die D and its periphery (paste PA) with illumination light. The oblique lighting device 48 is a two-way bar oblique lighting device, and can irradiate the paste PA around the two sides of the die D with illumination light. The illumination light of the coaxial lighting device 45 and the oblique lighting device 48 includes visible light and ultraviolet light. That is, the coaxial lighting device 45 and the oblique lighting device 48 are also UV irradiation units (second UV irradiation units). With this configuration, it is possible to irradiate the paste with UV light on the bond stage 46. This makes it possible to irradiate the paste with UV light before transporting after bonding. The irradiation time of the coaxial lighting device 45 and the oblique lighting device 48 can be changed by the shutter speed of the lighting, etc. This makes it possible to handle products with different paste hardening timings.

In the bonding process, the die D is placed on the paste PA applied to the semiconductor chip HT. In a visual inspection to check whether the die D has been bonded in the correct position, the coaxial lighting device 45 and the oblique lighting device 48 illuminate the die D while the board recognition camera 44 photographs the die D. In this illumination, UV is irradiated, and the paste PA is temporarily hardened to temporarily fix the die D. This prevents the die D from shifting during transportation after bonding, making it possible to increase the transportation speed.

The visual inspection is performed at the time when the die D is bonded to one row or one tab (one package area) of the substrate. That is, the coaxial lighting device 45 and the oblique lighting device 48 irradiate UV light at the time when the die D is bonded to one row or one tab (one package area) of the substrate.

This embodiment provides one or more of the following advantages:

(a) UV irradiation is performed immediately after applying the paste to temporarily fix it, so changes over time (e.g., paste dripping) can be reduced. This makes it possible to improve application accuracy.

(b) After the die is bonded, UV irradiation is performed to temporarily harden it, which makes it possible to prevent the die from shifting during transportation. This makes it possible to improve the bonding accuracy.

(c) The surface of the paste is hardened by UV irradiation, which shortens the time the paste is exposed to air, making it less likely to denature and allowing the paste to maintain its adhesive strength.

(d) It is possible to improve (stabilize) product quality within the space of a single substrate.

(e) The speed at which substrates are transported can be improved.

(f) The substrate transport speed can be increased, which makes it possible to improve product productivity.

<Modification>
Below, some representative modified examples of the embodiment are exemplified. In the following description of the modified examples, the same reference numerals as those in the above-mentioned embodiment may be used for parts having the same configuration and function as those described in the above-mentioned embodiment. The description of such parts may be appropriately cited within the scope of technical inconsistency. Furthermore, a part of the above-mentioned example and all or a part of the multiple modified examples may be appropriately applied in a composite manner within the scope of technical inconsistency.

(First Modification)
In the embodiment, an example in which the UV irradiation unit is mounted on the coating device has been described, but an illumination device that irradiates visible light containing UV may also be used. Fig. 10 is a front view showing the UV irradiation unit in the first modified example.

The preform section 90 is equipped with an oblique light illuminator 98. The oblique light illuminator 98 is a two-way bar oblique light illuminator that irradiates UV light around two sides of the paste PA. In other words, the oblique light illuminator 98 is a UV irradiation unit (first UV irradiation unit). The irradiation time of the oblique light illuminator 98 can be changed by the lighting shutter speed, etc. This makes it possible to accommodate products with different paste hardening timings.

(Second Modification)
In the embodiment, an example of UV irradiation using an illumination device included in the optical system of the bonding unit 40 has been described, but UV irradiation may also be performed using an illumination device included in the optical system of the preform unit 90. Fig. 11 is a front view showing the optical system of the preform unit in the second modified example.

The optical system of the preform section 90 includes a preform camera 94 and at least one of a coaxial illuminator 95 and an oblique illuminator 98. The coaxial illuminator 95 is capable of irradiating the paste PA with illumination light. The oblique illuminator 98 is a two-way bar oblique illuminator that is capable of irradiating the periphery of two sides of the paste PA with illumination light. The coaxial illuminator 95 and the oblique illuminator 98 irradiate visible light containing UV light. In other words, the coaxial illuminator 95 and the oblique illuminator 98 are also UV irradiation units (first UV irradiation units). The irradiation time of the coaxial illuminator 95 and the oblique illuminator 98 can be changed by the shutter speed of the illumination, etc. This makes it possible to accommodate products with different paste hardening timings.

In the preform process, paste PA is applied to the semiconductor chip HT. In a visual inspection to check whether the paste PA has been applied in the correct position and shape, a coaxial lighting device 95 and an oblique lighting device 98 illuminate the paste PA while a preform camera 94 photographs the paste PA. In this illumination, UV is irradiated and the paste PA is temporarily fixed. This makes it possible to reduce changes over time (e.g., paste dripping), thereby improving application accuracy.

The appearance inspection is performed at the time when the die D is bonded to one row or one tab (one package area) of the substrate. That is, the coaxial lighting device 95 and the oblique lighting device 98 irradiate UV light at the time when the die D is bonded to one row or one tab (one package area) of the substrate.

The disclosure made by the present inventors has been specifically described above based on the embodiments, but it goes without saying that the present disclosure is not limited to the above embodiments and can be modified in various ways.

For example, in the embodiment, an example has been described in which the paste PA is applied in a ring shape onto the semiconductor chip HT, but the paste PA may also be applied in a shape other than a ring shape onto the semiconductor chip HT (e.g., an X-shape or a Z-shape).

In the embodiment, an example has been described in which the paste PA is applied onto the semiconductor chip HT, but a semiconductor chip (die) separated from a semiconductor wafer may be stacked on top of the semiconductor chip HT.

In the embodiment, an example in which the paste PA is applied onto the semiconductor chip HT has been described, but the paste PA may be applied onto the substrate S. In this case, the semiconductor chip is bonded onto the substrate S.

In the embodiment, an example has been described in which the die D picked up by the bond head 41 from the die supply unit 10 is bonded to the semiconductor chip HT mounted on the substrate S. An intermediate stage may be provided between the die supply unit 10 and the bonding unit 40, the die D picked up by the pick-up head from the die supply unit 10 may be placed on the intermediate stage, and the die D may be picked up again from the intermediate stage by the bond head 41 and bonded to the semiconductor chip HT mounted on the substrate S.

1...Die bonder (semiconductor manufacturing equipment)
80: Control unit 91: Syringe 92: Nozzle 97: UV irradiation unit (first UV irradiation unit)

Claims (11)

A preform head having a syringe in which a UV-curable paste is stored and a nozzle provided at the tip of the syringe;
A first UV irradiation unit;
a control unit configured to apply UV light to the applied paste by the first UV irradiation unit after the paste is applied from the nozzle onto a component of a semiconductor device and before a die is bonded onto the component;
A semiconductor manufacturing apparatus comprising: 2. The semiconductor manufacturing apparatus according to claim 1,
the member is a plurality of semiconductor chips mounted on a substrate in a lattice pattern,
The control unit of the semiconductor manufacturing apparatus is configured to apply paste to one of the multiple semiconductor chips, and then irradiate the paste applied to the one semiconductor chip with UV light by the first UV irradiation unit before applying paste to a semiconductor chip next to the one semiconductor chip. 2. The semiconductor manufacturing apparatus according to claim 1,
the member is a plurality of semiconductor chips mounted on a substrate in a lattice pattern,
The control unit of the semiconductor manufacturing apparatus is configured to apply paste to the multiple semiconductor chips mounted in a row on the substrate, and then irradiate the paste applied to the multiple semiconductor chips mounted in a row on the substrate with UV light by the first UV irradiation unit. 2. The semiconductor manufacturing apparatus according to claim 1,
The first UV irradiation unit is provided on the preform head of the semiconductor manufacturing apparatus. 2. The semiconductor manufacturing apparatus according to claim 1,
The first UV irradiation unit of the semiconductor manufacturing equipment is an illumination device that irradiates UV light. 2. The semiconductor manufacturing apparatus according to claim 1,
The first UV irradiation unit is a lighting device for irradiating visible light containing UV light. 7. The semiconductor manufacturing apparatus according to claim 6,
In addition, it is equipped with a camera,
The control unit of the semiconductor manufacturing apparatus irradiates the paste with visible light containing UV light from the lighting device and captures an image of the paste with the camera. 2. The semiconductor manufacturing apparatus of claim 1, further comprising:
Bond head and
a second UV irradiation unit;
Equipped with
The control unit of the semiconductor manufacturing apparatus is configured to irradiate UV light onto the paste applied to the component by the second UV irradiation unit after the die is bonded to the component by the bond head and before the component to which the die is bonded is transported to an unloading section. 9. The semiconductor manufacturing apparatus according to claim 8,
The second UV irradiation unit is a lighting device for irradiating visible light containing UV light. 10. The semiconductor manufacturing apparatus according to claim 9,
In addition, it is equipped with a camera,
The control unit is a semiconductor manufacturing apparatus that irradiates the paste and the die with visible light containing UV light from the lighting device and takes an image of the die with the camera. A step of carrying a substrate into a semiconductor manufacturing apparatus including a preform head having a syringe containing a UV-curable paste and a nozzle provided at the tip of the syringe, and a first UV irradiation unit;
applying the paste from the nozzle onto the substrate or the semiconductor chip mounted on the substrate, and then irradiating the applied paste with UV light by the first UV irradiation unit before bonding a die onto the substrate or the semiconductor chip;
A method for manufacturing a semiconductor device having the above structure.

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