JP2019134170A - Image element and imaging device - Google Patents

Abstract

An object of the present invention is to efficiently collect light on a photoelectric conversion unit. A solid-state imaging device includes a microlens having a rotationally symmetrical shape with respect to the center, and a photoelectric conversion section that receives light transmitted through the microlens and converts it into an electrical signal. The microlens has a planar shape with different linear distances to the lens edge, and the microlens includes first bottom surface portions near the lens edge and the first bottom surface portions at n locations (where n is a natural number) with relatively long linear distances. a vertical height Ld from the first bottom surface portion to the apex of the microlens, and a vertical height Lh from the second bottom surface portion to the apex of the microlens about 2.1 times. [Selection drawing] Fig. 1

Description

  The present invention relates to a solid-state imaging device and an imaging apparatus.

In recent years, video cameras and electronic cameras using a solid-state imaging device such as a CCD type or a CMOS type have been widely used. A solid-state imaging device has a photoelectric conversion unit that converts light received by a pixel into an electrical signal, a plurality of pixels are arranged in a matrix, and a signal line for reading the electrical signal of the photoelectric conversion unit of each pixel is photoelectrically converted. It is arranged around the part. Light from a subject incident by a photographing lens of a video camera or an electronic camera using a solid-state image sensor is imaged on pixels arranged in a matrix and converted into an electrical signal by a photoelectric conversion unit.

However, not all of the light focused on the pixels is incident on the photoelectric conversion unit by signal lines or the like, so microlenses are arranged in a matrix on the side where the light is incident on each pixel. A technique of condensing wasted light on a photoelectric conversion unit by a microlens is used, and is described in Patent Document 1.
In addition, a normal microlens is formed in a hemispherical shape, and its planar shape is a circular shape, but the planar shape of a pixel is generally a square shape, and the shape of the pixel does not necessarily match the planar shape of the microlens, An area that is not sufficiently condensed on the photoelectric conversion unit is formed. In order to prevent this, Patent Document 2 describes a technique in which the planar shape of the microlens is a quadrilateral shape, or the pixel shape and the planar shape of the microlens are a polygonal shape.
Further, for example, in the case of a planar microlens having a different linear distance to the lens end, such as a rectangular shape, the height of the microlens near the lens end where the linear distance is relatively long is set to the height of the microlens at a position where the linear distance is not. Patent Document 3 describes a technique for increasing the light condensing rate by making it larger than the height.

Japanese Unexamined Patent Publication No. 60-59752 JP-A-5-326913 International Publication WO2007 / 007467

In a solid-state imaging device having a microlens, the shape of the pixel of the solid-state imaging device is a square shape, whereas the planar shape of the microlens is generally formed in a circular shape, and the photoelectric conversion unit is efficiently There was a problem that it was difficult to collect light. In order to solve this, a method of forming the shape of the pixel and the planar shape of the microlens into a polygonal shape has been considered, but in reality it is not easy to design or manufacture. Further, there is a problem that the light collection rate to the photoelectric conversion unit is not necessarily improved simply by making the planar shape of the microlens a rectangular shape.

The problem of this conventional technique will be described with reference to FIG. FIG. 10A is a plan view of a general solid-state imaging device as viewed from above. 701 is a square microlens according to the prior art, 111 is a photoelectric conversion unit such as a photodiode, and 110 is a matrix. Each of the divided pixels, A is a horizontal cross-sectional position that cuts in the horizontal direction connecting the centers of the opposite sides of the pixel 110, and B is a diagonal cross-sectional position that cuts the pixel 110 in the diagonal direction. FIG.
FIGS. 10B and 10C are diagrams showing cross-sectional shapes and condensing images of the microlens 701 and the photoelectric conversion unit 111 when cut at the horizontal cross-sectional position A and the diagonal cross-sectional position B in FIG. , 309 is incident light, and Lh is the thickness of the microlens 701.

Here, since the length of the diagonal line of the photoelectric conversion unit 111 is longer than the length of each side, the diagonal sectional shape of the microlens 701 in FIG. 10C is larger than the horizontal sectional shape of the microlens 701 in FIG. The photoelectric conversion unit 111 is also longer in FIG. 10C cut at the diagonal cross-sectional position B.
However, when the lens thickness Lh is the same, the microlens 701 in FIG.
If the light beam can be efficiently focused on the photoelectric conversion unit 111 with the horizontal cross-sectional shape of FIG. 10C, the radius of curvature becomes large in the diagonal cross-sectional shape of the microlens 701 in FIG. It becomes difficult to concentrate.

The invention described in Patent Document 3 is for solving such a problem. However, by simply changing the height of the microlens, the incident light to the microlens is condensed at one point in the pixel. There was a problem that it was insufficient to do so.
An object of the present invention is to provide a solid-state imaging device capable of condensing incident light on a microlens at one point in the pixel even if the shape of the pixel 110 is a quadrangular shape, and an imaging device including the solid-state imaging device. There is to do.

The solid-state imaging device according to claim 1 includes a microlens having a rotationally symmetric shape with respect to a center, and a photoelectric conversion unit that receives light transmitted through the microlens and converts the light into an electrical signal. The lens has a planar shape with different linear distances from the center to the lens end, and the microlens has a first bottom surface portion in the vicinity of the lens end at n locations (n is a natural number) where the linear distance is relatively long. A second bottom surface portion that does not include the first bottom surface portion, and a vertical height Ld from the first bottom surface portion to the apex of the microlens is determined from the second bottom surface portion to the microlens. It is characterized by being about 2.1 times the height Lh in the vertical direction to the apex.

The solid-state imaging device of the present invention can realize a microlens capable of obtaining a good light collection rate by improving the light collection rate at the four corners even if the pixel shape is a square shape, so that photoelectric conversion is performed even with the same light amount. The signal output from the unit increases, and the sensitivity of the solid-state image sensor can be improved.

It is explanatory drawing which shows the structure of the imaging device of the 1st Embodiment of this invention. It is explanatory drawing which shows the structure of the solid-state image sensor of the 1st Embodiment of this invention. It is explanatory drawing which shows the structure of the pixel unit 60 of the 1st Embodiment of this invention. It is an auxiliary figure for explaining the shape of the micro lens of a 1st embodiment of the present invention. It is explanatory drawing explaining the manufacturing method of the microlens of the 2nd Embodiment of this invention. It is explanatory drawing explaining the shape of the micro lens of the 2nd Embodiment of this invention. It is explanatory drawing explaining the structure of the imaging device of the 3rd Embodiment of this invention. It is explanatory drawing explaining the structure of the solid-state image sensor of the 3rd Embodiment of this invention. It is an auxiliary | assistant figure which shows the mode of condensing in case a lens thickness is thick. It is explanatory drawing which shows the structure of the pixel unit 60 by a prior art. It is explanatory drawing which shows the structure of the micro lens 801 by a prior art.

(First embodiment)
FIG. 1 is a block diagram schematically showing the configuration of the imaging apparatus according to the first embodiment of the present invention. The imaging device 10 includes a photographing optical system 11, an image processing unit 13, a display unit 15, and an eyepiece lens 16. The photographing optical system 11 forms a subject image on the imaging surface of the solid-state imaging device 1. The solid-state imaging device 1 captures the subject image and outputs an imaging signal. The image processing unit 13 creates image data of the subject by performing various image processing on the image pickup signal. The display unit 15 displays an image of the subject based on the image data created by the image processing unit 13. The photographer can visually recognize the image displayed on the display unit 15 through the eyepiece 16.

FIG. 2 is a plan view showing a state when the solid-state imaging device 1 is viewed from above. In FIG.
Reference numeral 1 denotes a solid-state imaging device, 2 denotes a photoelectric conversion unit including an embedded photodiode, 3 denotes a vertical CCD that transfers the signal charge generated by the photoelectric conversion unit 2 in the vertical direction, and 4 denotes a signal charge sent from the vertical CCD 3 Horizontal CCD that transfers the image in the horizontal direction, 5 is an output amplifier, 6 is a pixel, 60
Indicates pixel units viewed from the focused area. Although not shown in FIG. 2, a microlens is disposed above the photoelectric conversion unit 2 via a flat layer.

The pixel 6 includes a photoelectric conversion unit 2, a part of the vertical CCD 3, a micro lens, and the like, and a plurality of pixels 6 are arranged in a two-dimensional manner. However, the microlens is arranged so that the center thereof is the same as the center of the photoelectric conversion unit 2. Therefore, the pixel unit is an area denoted by reference numeral 60 when defined from the area to be condensed. Here, the pixel unit is represented as a rectangle for easy understanding,
Actually, it is a square shape, and in the subsequent drawings, a focused square-shaped region is represented as a pixel unit.

The electrodes for controlling the charge transfer of the vertical CCD 3 are a first polysilicon electrode (not shown) and a second polysilicon electrode (not shown), as in a general CCD solid-state imaging device.
It consists of and. Further, the solid-state imaging device 1 has a peripheral circuit for generating a drive pulse and the like, but is omitted from the drawing because it is not a main part of the present invention.
Note that the present invention is not limited to the CCD type solid-state image sensor, and the effects of the present invention are not changed even in a CMOS type or other solid-state image sensor.

Next, FIG. 3 is a diagram illustrating the pixel unit 60 in FIG. 2 in detail, and FIG.
FIG. 3B is a plan view when 0 is viewed from above, FIG. 3B is a horizontal sectional view of the pixel unit 60 when cut at a horizontal sectional position A in FIG. 3A, and FIG. The diagonal sectional view of the pixel unit 60 when cut at the diagonal sectional position B in FIG.

3A, 3 </ b> B, and 3 </ b> C, 101 is a microlens, 102 is a flat layer under the microlens 101, 103 is a color filter, 104 is a light-shielding film that also serves as power supply wiring, 105 is wiring, 106 is a light shielding film, 107 is a semiconductor substrate, 108 is a flat layer between the photoelectric conversion unit 111 and the color filter 103, 109 is a concave portion of the flat layer 102, and Lh is a flat layer 1.
02, the thickness of the microlens at a portion other than the concave surface portion 109, Ld is the thickness of the microlens 101 at the concave surface portion 109 of the flat layer 102, Wh is the thickness of the portion other than the concave surface portion 109 of the flat layer 102, Wd is the thickness of the concave surface portion 109 of the flat layer 102, and L is the thickness from the surface of the flat layer 102 other than the concave surface portion 109 to the surface of the photoelectric conversion unit 111 (that is, the microlens 101).
Is the pixel pitch, Rh is the radius of curvature of the microlens 101 at the horizontal sectional position A, Rd is the radius of curvature of the microlens 101 at the diagonal sectional position B, and Gh is the flat layer 102. A gap between the microlenses 101 at the concave surface 109,
Gd indicates a gap between the microlenses 101 at the concave portion 109 of the flat layer 102.

In FIG. 3, in the case of the horizontal sectional position A in FIG.
Acts as a lens for h. On the other hand, in the case of the diagonal sectional position B in FIG.
And in the four corners of the microlens 101, the flat layer 102 is Wd thinner than the thickness Wh. Therefore, the microlens 101 functions as a lens having an Ld thicker than Lh.

Note that the microlens 101 is made of, for example, a photoresist, and the flat layer 102 is made of, for example, an acrylic resin.
02 can be regarded as an integrated lens.

Here, the effect of the difference in thickness of the microlens 101 between the horizontal sectional position A and the diagonal sectional position B will be described in detail with reference to FIGS. 10 and 9. In the description of the prior art, FIG.
The state of condensing when the lens thickness of (b) and (c) is Lh has been described. FIG. 9 shows the state of condensing when the microlens 121 of Ld is thicker than Lh. Is shown. 9A shows the horizontal cross-sectional shape of the microlens 121 having a thickness of Ld, and FIG. 9B shows the diagonal cross-sectional shape of the microlens 121 having a thickness of Ld. The same thing as FIG. 10 is shown.

In the conventional technique, when the thickness of the microlens 701 is set to Lh so as to efficiently collect light in a horizontal cross-sectional shape as shown in FIG. 10B, collection in a diagonal cross-sectional shape as shown in FIG. I explained that the light gets worse. Next, when the thickness of the microlens 121 is set to Ld thicker than Lh so as to efficiently collect light with a diagonal cross-sectional shape as shown in FIG. 9B, the radius of curvature Rd becomes too small, and FIG. ), The light condensing in the horizontal sectional shape is deteriorated, and the incident light 309 cannot be sufficiently condensed on the photoelectric conversion unit 111.

However, in the case of the first embodiment of the present invention shown in FIG. 3, the horizontal sectional position A is shown in FIG.
9B, and acts as the microlens 121 having the thickness Ld in FIG. 9B at the diagonal cross-section position B. Therefore, the horizontal cross-section position A and the diagonal cross-section position B
In either case, it is possible to realize a good light condensing state as shown in FIGS. 10 (b) and 9 (b).

In the present embodiment, the thickness L of the microlens 101 at the concave portion 109 of the flat layer 102.
d is set to about 2.1 times the thickness Lh of the microlens 101 in a portion other than the concave portion 109 of the flat layer 102. That is, in the concave surface portion 109, the flat layer 102 is about 1.1 times thinner than Lh. By setting the thickness of the microlens 101 in such a relationship, light incident on the microlens 101 is condensed at one point in the pixel. That is, the light condensing property of the microlens 101 is remarkably improved as compared with, for example, the microlens 121 and the microlens 701 illustrated in FIGS. 9 and 10.

In addition, although it referred to as about 2.1 times here, if the said effect can be show | played, it does not need to agree | coincide strictly 2.1 times. For example, a slight deviation from 2.1 times may occur due to a manufacturing error or the like, but a configuration in which such an error exists is also included in the present invention.

Further, in the prior art, as shown in FIGS. 10C and 9B, the gap Gd between the microlenses in the diagonal direction cannot be sufficiently reduced. That is, relatively large gaps are generated in the diagonal direction in the many microlenses 701 and microlenses 121 arranged two-dimensionally. Light incident on the gap cannot be condensed, resulting in a reduction in light collection efficiency.

On the other hand, in the case of the first embodiment of the present invention shown in FIG. 3, since Ld is set to about 2.1 times Lh, the end (hem) of the microlens 101 at the diagonal cross-sectional position B is flat. Layer 102
Since the inclination angle to the vertical direction can be made almost vertical, the gap Gd between the microlenses at the diagonal cross-sectional position B can be made extremely small. That is, in the first embodiment of the present invention, the microlenses 101 can be gaplessly arranged (arranged without gaps), and the light collection efficiency can be further increased. In addition, such a shape of the microlens 101 contributes to miniaturization of the pixel size, and a higher-resolution solid-state imaging device can be manufactured.

For example, when the pixel pitch M is about 6.45 μm, the microlens gap Gh at the horizontal cross-sectional position A is set to 0.10 μm or less, and the microlens gap Gd at the diagonal cross-sectional position B is set to 0.25 μm or less. it can. At this time, the gap Gd is a small value of 4% or less of the pixel pitch M, and it can be said that the microlens 101 is gapless not only in the horizontal direction but also in the diagonal direction.

In the present embodiment, the thickness Lh, the thickness Ld, the distance L from the microlens 101 to the photoelectric conversion unit 111, and the radius of curvature Rh of the microlens 101 at the horizontal sectional position A are further described.
And the radius of curvature Rd of the microlens 101 at the diagonal cross-sectional position B are set so as to satisfy the relationship represented by the following formula (1). The refractive index n of the microlens 101 is about 1
. It is assumed that it is set in the range of 55 to 1.7.
2.3 ≦ (L + Ld−Rd) / (L + Ld−Rh) × Ld / Lh ≦ 2.6 (1)

By configuring the solid-state imaging device 1 so that the relationship of the above formula (1) is established, the incident light to the microlens 101 is focused on one point on the surface of the photoelectric conversion unit 111, and the microlens 101 It becomes possible to further improve the light condensing property of the lens 101.

Here, the shape of the microlens 101 of the present invention is shown in the perspective view of FIG. FIG.
The microlens 201 of FIG. 4 is obtained by rounding the corners of the four corners of the microlens 101 described above, and the lens effect in the vicinity of the four corners hardly changes. Therefore, the same effect can be obtained with such a shape.

In the present embodiment, the flat layer 102 has a two-stage structure having the thickness Wh and the thickness Wd. However, the flat layer 102 may be multi-staged, or the same effect can be obtained by providing a continuous inclination. Such a shape is
It can be realized by a conventionally known general method such as etching.
In the case of this embodiment, after forming the flat layer 102 having a thickness of Wh in advance, it can be processed by masking the central portion and removing the periphery by etching, or by repeating this process, it can be processed in multiple stages. it can. Further, the flat layer 102 may not be processed as a single thick flat layer, but may be processed so as to form a flat layer in each step and laminated to form a flat layer having two or more steps. The microlens 101 can also be realized by a conventionally known method. For example, in the case of the first embodiment, after processing the flat layer 102 having a thickness of Wh and Wd, the microlens 101 made of photoresist or the like is used. When the flat layer 102 is covered with a layer that is the basis of the above and heat is applied by reflow or the like, the microlens 101 can be formed by dripping around the lower Wd portion of the flat layer 102.

As described above, the solid-state imaging device of the present invention can provide a solid-state imaging device capable of obtaining a good light collection rate by improving the light collection rate at the four corners even if the shape of the pixel is a square shape. Even with the same amount of light, the signal output from the photoelectric conversion unit increases, and the sensitivity of the solid-state imaging device can be improved. In particular, since the light incident on the microlens can be condensed at one point in the pixel, the light condensing rate can be further improved as compared with the conventional case.

(Second Embodiment)
Next, a second embodiment of the present invention will be described. In the following description, the same parts as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and the description thereof is omitted.

The imaging device of the present embodiment has a configuration in which the solid-state imaging device 1 of the imaging device 10 according to the first embodiment is replaced with a different solid-state imaging device 1a. Hereinafter, this solid-state imaging device 1a
Will be described in detail.

The solid-state imaging device 1a is a solid-state imaging device in which microlenses are formed by a so-called double lens method. As is well known, in the double lens system, after a color filter is formed by photolithography or the like, a planarizing film is applied, and a large number of microlenses arranged in a two-dimensional manner are arranged every other pixel on the staggered arrangement. Form.

FIG. 5 is a plan view schematically showing the state of the solid-state imaging device 1a as viewed from above. When manufacturing the solid-state imaging device 1a of this embodiment, the microlens 301a is first formed by photolithography or the like. At this time, the microlenses 301b adjacent to the top, bottom, left and right of the microlens 301a are not yet formed. That is, in the double lens system, every other microlens 301a is formed (in a so-called staggered arrangement). Thereafter, microlenses 301b are formed between the microlenses 301a.

6A and 6B are diagrams illustrating the pixel unit of the present embodiment in detail. FIG. 6A is a horizontal sectional view of the pixel unit when cut at the horizontal sectional position A, and FIG. 6B is a diagonal sectional position B. It is diagonal sectional drawing of the pixel unit when cut | disconnecting by.

Also in the present embodiment, the thickness Ld of the microlens 301 at the diagonal cross-sectional position B is
The thickness is set to about 2.1 times the thickness Lh of the microlens 301 at the horizontal sectional position A. By setting the thickness of the microlens 301 in such a relationship, incident light to the microlens 301 is condensed at one point in the pixel. That is, the light condensing property of the microlens 301 is remarkably improved as compared with, for example, the microlens 121 and the microlens 701 illustrated in FIGS. 9 and 10.

11 is a detailed drawing of a microlens 801 formed by a conventional double lens system. FIG. 11A is a horizontal sectional view of a pixel unit 860 when cut at a horizontal sectional position A. FIG.
FIG. 11B is a diagonal sectional view of the pixel unit 860 when cut at the diagonal sectional position B. FIG. In the prior art, the microlens gap Gd cannot be made sufficiently small because the thickness of the microlens 801 is the same at the horizontal sectional position A and the diagonal sectional position B. That is, a relatively large gap is generated in the diagonal direction in a large number of microlenses 801 arranged two-dimensionally. Light incident on the gap cannot be condensed, resulting in a reduction in light collection efficiency. In addition, since the end portion (bottom portion) of the microlens 801 has an extremely small angle with respect to the flat portion and the lens effect cannot be obtained, the substantial gap Gd between the microlenses is further increased.

On the other hand, in the case of the second embodiment of the present invention shown in FIG. 6, since Ld is set to about 2.1 times Lh, the end (hem) of the microlens 301 at the diagonal cross-sectional position B is flat. Since the drop angle to the layer can be increased as compared with the conventional case, the gap Gd between the microlenses at the diagonal cross-sectional position B can be reduced as compared with the conventional case. That is, the second of the present invention
In this embodiment, the microlenses 301 can be arranged without gaps (arranged without gaps), and the light collection efficiency can be further improved.

Further, the solid-state imaging device 1a of the present embodiment is also formed so as to satisfy the relationship expressed by the above formula (1). Therefore, the incident light to the microlens 301 is condensed at one point on the surface of the photoelectric conversion unit 111, and the condensing property of the microlens 301 can be further improved.

(Third embodiment)
Next, a third embodiment of the present invention will be described in detail. In the following description, the first
The same reference numerals as those in the first embodiment are assigned to the same portions as those in the first embodiment, and the description thereof is omitted.

FIG. 7 is a block diagram schematically showing the configuration of the imaging apparatus according to the third embodiment of the present invention. The imaging device 20 further includes a lens driving unit 12 and a focus detection unit 14 in addition to the imaging optical system 11, the image processing unit 13, the display unit 15, and the eyepiece lens 16 similar to those in the first embodiment. The focus detection unit 14 detects the focus adjustment state of the photographing optical system 11 based on the focus detection signal output from the solid-state imaging device 1b. The lens driving unit 12 drives the focusing lens included in the photographic optical system 11 based on the focus adjustment state detected by the focus detection unit 14 to adjust the focus of the photographic optical system 11.

FIG. 8 is a plan view of the pixel unit 760 of the solid-state imaging device 1b as viewed from above. Unlike the first embodiment, each pixel 760 included in the solid-state imaging device 1b according to the present embodiment includes a pair of photoelectric conversion units 711a and 711b. Each of the pair of photoelectric conversion units 711a and 711b has a shape in which the photoelectric conversion unit 111 included in the pixel unit 60 according to the first embodiment is divided into right and left along a vertical line passing through the center.

It is known that by configuring each pixel 760 in this way, it is possible to simultaneously output an imaging signal for creating image data and a focus detection signal for detecting a focus adjustment state from the solid-state imaging device 1b. Yes. That is, a pair of photoelectric conversion units 711 included in one pixel 760.
When the photoelectric conversion outputs of a and 711b are added, the same imaging signal as that output by the photoelectric conversion unit 111 in the first embodiment is obtained. When the photoelectric conversion output of the photoelectric conversion unit 711a and the photoelectric conversion output of the photoelectric conversion unit 711b are separated, a focus detection signal that can be used for so-called phase difference type focus detection is obtained. The image processing unit 13 creates image data based on the former imaging signal. The focus detection unit 14 detects the focus adjustment state based on the latter focus detection signal.

By the way, if each pixel 760 is configured as shown in the plan view of FIG. 8, the light receiving areas of the respective photoelectric conversion units 711a and 711b are reduced as compared with the first embodiment. Therefore, pixel 7
Even when the size of 60 is the same as that of the pixel 60 of the first embodiment, the light condensing property required for the microlens 101 is more severe. On the other hand, in the present embodiment, the thickness Ld of the microlens 101 at the diagonal cross-sectional position B is about 2.1, which is the thickness Lh of the microlens 101 at the horizontal cross-sectional position A, as in the first embodiment. It is set to double. By setting the thickness of the microlens 101 in such a relationship, light incident on the microlens 101 is condensed at one point in the pixel. That is, the light condensing property of the microlens 101 is remarkably improved as compared with, for example, the microlens 121 and the microlens 701 illustrated in FIGS. 9 and 10. Therefore, even when the photoelectric conversion unit included in each pixel 760 is configured as a pair of photoelectric conversion units 711a and 711b as shown in the plan view of FIG. 8, the S / N ratio of the photoelectric conversion output is a sufficient level. Can be kept in. In addition, although it is conceivable that each pixel has a larger number of photoelectric conversion units, even in this case, since the light collecting property in the diagonal direction is improved, the S / N ratio of the photoelectric conversion output is increased. It can be kept at a sufficient level.

In the third embodiment, all the pixels 760 included in the solid-state imaging device 1b include the pair of photoelectric conversion units 711a and 711b as illustrated in FIG. 8, but only some of the pixels are included. The pixel shown in FIG. 8 may be used, and the other pixels may have only one photoelectric conversion unit 111 as in the first embodiment.

In each of the first to third embodiments, each pixel has a substantially square shape, but the present invention is applied to a solid-state imaging device having pixels having a shape different from the square. It is also possible. For example, the present invention can be applied to a pixel having a shape (point-symmetric shape) that is rotationally symmetric with respect to the pixel center, such as a rhombus shape obtained by rotating a square by 45 degrees, a regular hexagon, or a regular octagon. It is.

DESCRIPTION OF SYMBOLS 1, 1a, 1b ... Solid-state image sensor, 10, 20 ... Imaging device

The present invention relates to an imaging device and an imaging device.

An imaging element according to claim 1, a microlens which light is incident, a plurality of photoelectric conversion portions for converting light from the microlens to the charge, and the micro lens in the optical axis direction of the microlens A resin layer disposed between the plurality of photoelectric conversion units and having a surface on which the microlens is formed, the microlens extending from the surface of the resin layer in a first direction to the microlens The height up to the top of is about 2.1 times the height from the surface of the resin layer to the top of the microlens in a second direction different from the first direction .

Claims (6)

A microlens having a rotationally symmetric shape with respect to the center;
A photoelectric conversion unit that receives the light transmitted through the microlens and converts it into an electrical signal;
The microlens has a planar shape with different linear distances from the center to the lens end,
The microlens has a first bottom surface portion in the vicinity of a lens end at n locations (n is a natural number) where the linear distance is relatively long, and a second bottom surface portion not including the first bottom surface portion,
The vertical height Ld from the first bottom surface portion to the apex of the microlens is about 2.1 times the vertical height Lh from the second bottom surface portion to the apex of the microlens. A solid-state imaging device. The solid-state imaging device according to claim 1,
The microlens condenses the incident light at one point on the surface of the photoelectric conversion unit. The solid-state imaging device according to claim 2,
The distance from the second bottom surface portion to the photoelectric conversion unit is L, the radius of curvature of the microlens at the first bottom surface portion is Rd, and the radius of curvature of the microlens at the second bottom surface portion is Rh. When
2.3 ≦ (L + Ld−Rd) / (L + Ld−Rh) × Ld / Lh ≦ 2.6
A solid-state imaging device characterized by satisfying the relationship: The solid-state imaging device according to claim 3,
The microlens has a refractive index of 1.55 to 1.7. In the solid-state image sensor as described in any one of Claims 1-4,
A solid-state imaging device comprising a plurality of the microlenses that are two-dimensionally gaplessly arranged. An imaging apparatus comprising the solid-state imaging device according to claim 1.

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