JP2012211942A - Solid-state image sensor and image pickup apparatus - Google Patents

Abstract

Good phase difference information is obtained without reducing a light shielding film opening of a phase difference detection pixel.
SOLUTION: A plurality of photoelectric conversion elements 5 which are formed in a two-dimensional array on a substrate and each generate a signal charge corresponding to the amount of incident light, and are stacked on each of the plurality of photoelectric conversion elements 5. A microlens having the same shape and a light-shielding film interposed between the light-receiving surface of the photoelectric conversion element 5 and the corresponding microlens and having an opening 6 on the light-receiving surface of the photoelectric conversion element 5; Among the conversion elements 5, the opening provided in two adjacent photoelectric conversion elements 5 G and 5 g for detecting phase difference information of incident light from the subject is provided as one opening 7 in common with the two photoelectric conversion elements. Selected figure] Figure 3

Description

  The present invention relates to a solid-state image sensor in which phase difference detection pixels (also referred to as focus detection pixels) are mounted on an imaging surface for capturing a subject image, and an image pickup apparatus in which the image sensor is mounted.

  When focusing on a subject with an imaging device such as a digital camera, there is a method of detecting the distance to the subject by the phase difference AF method. In this phase difference AF method, for example, as described in Patent Document 1 below, two adjacent pixels (photodiode (photoelectric conversion element)) on a light receiving surface (imaging surface) of a solid-state image sensor are referred to as pixels. Is a pair of focus detection pixels.

  Each light shielding film opening is directed in the opposite direction with respect to the center of each pixel so that light seen from the subject with the right eye is incident on one of the paired pixels and light viewed from the subject with the left eye is incident on the other. In general, each pixel is decentered to have an incident light angle dependency.

  FIG. 10 is a diagram illustrating the light shielding film openings of the phase difference detection pixels and the normal pixels, illustrating six pixels, and the central two pixels are focus detection pixels (phase difference detection pixels). Each of the upper and lower pixels is a normal pixel, and each of the light shielding film openings 1 is wide. On the other hand, the light shielding film openings 2a and 2b of the phase difference detection pixel are narrower than the opening 1 and are eccentrically provided in opposite directions from the center of each pixel.

  FIG. 11 is a diagram for explaining the principle of detecting the distance to the subject with the phase difference detection pixels. The paired pixels of the phase difference detection pixels are arranged at an arbitrary interval in the horizontal direction, and a signal f (x) obtained through the light shielding film opening 2a and a signal g (x) obtained through the light shielding film opening 2b are obtained. The signal f (x) and the signal g (x) are obtained as a result of receiving incident light from the same subject on the same horizontal line. The signals f (x) and g (x) have the same waveform shifted in the horizontal direction. The amount of phase difference. This phase difference amount is a parallax according to the distance to the subject, and the distance to the subject can be obtained from this phase difference amount.

  The light shielding film openings 2a and 2b provided in the conventional phase difference detection pixel are small and separately formed as shown in FIG. 10 so as to obtain a good parallax between them. In recent years, solid-state imaging devices have been increased in the number of pixels, and it is common to mount 10 million pixels or more, and one pixel and one pixel are miniaturized, and the size of one pixel is approaching the manufacturing limit. As a result, the light shielding film openings 2a and 2b provided in the phase difference detection pixel must be formed considerably smaller than one pixel.

  However, there is a problem that the condensing point (light spot) of incident light by the microlenses stacked on each pixel cannot be made smaller than the wavelength of incident light. The diameter of the light spot is approximately the spot diameter Φ = 1.22 × λ / NA when the light wavelength λ and the lens aperture NA are used.

  Here, NA = n × sin θ, θ is the maximum angle of light from the lens toward the focal point, and n is the refractive index of the medium between the lens and the focal point. As an optical system in the solid-state imaging device, when n is a value of an oxide film (approximately 1.46) and θ = 45 degrees, φ = 1.26 × λ.

  This indicates that the spot diameter has a spread about the wavelength of light, and when the wavelength of 550 nm is considered as G (green) light, the spot diameter is about 0.7 μm. Therefore, when one side of the light shielding film openings 2a and 2b of the phase difference detection pixel is less than 0.7 μm, the light spot is kicked by the light shielding film, and the sensitivity is drastically lowered.

  For example, when considering a solid-state imaging device in which one side of one pixel is a 1.4 μm cell, the size of the light shielding film openings 2a and 2b is about 0.7 μm. Therefore, if the light shielding film openings 2a and 2b are narrowed in order to acquire the phase difference information, the sensitivity of the phase difference detection pixel is drastically lowered, and it becomes difficult to acquire good phase difference information. When the focal length is obtained by phase difference AF, there arises a problem that AF accuracy cannot be obtained during low-illuminance shooting.

JP 2009-105358 A

  SUMMARY OF THE INVENTION An object of the present invention is to provide a solid-state imaging device capable of acquiring favorable phase difference information without reducing the light-shielding film opening even when a light-shielding film opening for detecting a phase difference is provided in a pixel that has been miniaturized. An object of the present invention is to provide an imaging device equipped with an element.

  A solid-state imaging device according to the present invention includes a plurality of photoelectric conversion elements arranged in a two-dimensional array on a substrate, each of which generates a signal charge corresponding to the amount of incident light, and stacked on each of the plurality of photoelectric conversion elements. A microlens having the same shape and a light-shielding film interposed between the light-receiving surface of the photoelectric conversion element and the corresponding microlens and having an opening on the light-receiving surface of the photoelectric conversion element, Among the photoelectric conversion elements, the opening provided in two adjacent photoelectric conversion elements for detecting phase difference information of incident light from a subject is provided as one opening in common between the two photoelectric conversion elements. .

  An image pickup apparatus according to the present invention includes the above-described solid-state image pickup element.

  According to the present invention, it is possible to acquire good phase difference information without reducing the opening of the light shielding film.

It is a functional block diagram of the imaging device concerning one embodiment of the present invention. It is a surface schematic diagram of the solid-state image sensor shown in FIG. It is a figure which shows the light shielding film opening for 6 pixels in the dotted-line rectangular frame of FIG. It is a figure which shows the wiring laying state and light shielding film opening of the solid-state image sensor shown in FIG. FIG. 5 is a schematic cross-sectional view taken along the line A-A ′ of FIG. 4. It is a figure which shows the light shielding film opening of embodiment replaced with FIG. It is a figure which shows the light shielding film opening of embodiment replaced with FIG. It is a figure which shows the light shielding film opening of embodiment replaced with FIG. It is a figure which shows the pixel arrangement | sequence and light shielding film opening of embodiment replaced with FIG. It is a figure which illustrates the light shielding film opening of the conventional phase difference detection pixel. It is explanatory drawing of the phase difference amount which a phase difference detection pixel detects.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a functional block configuration diagram of a digital camera (imaging apparatus) equipped with a solid-state imaging device according to an embodiment of the present invention. The digital camera 10 includes a photographic optical system 21 that includes a photographic lens 21a, a diaphragm 21b, and the like, and an imaging chip 22 that is disposed at a subsequent stage of the photographic optical system 21.

  The image pickup device chip 22 has a signal reading means of a single plate type solid-state image pickup device 22a for color image pickup such as a CCD type or a CMOS type, and analog image data output from the solid-state image pickup device 22a. An analog signal processing unit (AFE) 22b that performs analog processing such as correlated double sampling processing, and an analog / digital conversion unit (A / D) 22c that converts analog image data output from the analog signal processing unit 22b into digital image data; Is provided. In the present embodiment, a CMOS type is described as an example of the solid-state imaging element 22a.

  The digital camera 10 further includes a driving unit (including a timing generator TG) 23 that controls driving of the solid-state imaging device 22a, the analog signal processing unit 22b, and the A / D 22c in accordance with an instruction from a system control unit (CPU) 29 described later. And a flash 25 that emits light in response to an instruction from the CPU 29. The drive unit 23 may be mounted together in the image sensor chip 22 in some cases.

  The digital camera 10 of this embodiment further includes a digital signal processing unit 26 that takes in digital image data output from the A / D 22c and performs known image processing such as interpolation processing, white balance correction, and RGB / YC conversion processing, and an image. The compression / decompression processing unit 27 that compresses data into JPEG format image data or the like, and the display unit 28 that displays menus and displays through images and captured images, and the entire digital camera. A system control unit (CPU) 29 for controlling, an internal memory 30 such as a frame memory, and a media interface (I / F) unit 31 for performing interface processing between a recording medium 32 for storing JPEG image data and the like; Are connected to each other, and an instruction input from the user is input to the system control unit 29. Operation unit 33 for performing is connected.

  FIG. 2 is a schematic diagram of the surface of the solid-state imaging device 22a shown in FIG. 1, and shows a pixel array and a color filter array. In the illustrated embodiment, odd-numbered pixel rows (a square frame inclined by 45 degrees represents each pixel, and R (red), G (green), and B (blue) on each pixel represent the color of the color filter. ) With a so-called honeycomb pixel arrangement in which even-numbered pixel rows are shifted by a ½ pixel pitch.

  When only the pixels in the odd rows are viewed, the pixel arrangement is a square lattice arrangement, and the three primary color filters RGB are arranged in a Bayer arrangement. In addition, even when only the pixels in even rows are viewed, the pixel arrangement is a square lattice arrangement, and the three primary color filters rgb are arranged in a Bayer arrangement. R = r, G = g, and B = b, and the same color pixels diagonally adjacent form a pair pixel. On each pixel (on the color filter), microlenses having the same shape are mounted on all pixels (not shown).

  FIG. 3 is a diagram illustrating a light-shielding film opening for six pixels surrounded by a dotted frame in the center portion of FIG. Among the paired pixels, a pixel mounted with a green (G, g) color filter is employed as a paired pixel constituting the phase difference detection pixel. This is because there are more pixels than those equipped with red and blue color filters.

  The light shielding film openings 6 of the normal pixels 5 other than the phase difference detection pixels are individually provided on each pixel 5 and are openings 6 slightly narrower than the area of each pixel 5. On the other hand, the light-shielding film opening 7 of the phase difference detection pixel of this embodiment is a single opening common to the paired pixels 5G and 5g, and the area is widened.

  The light shielding film opening 7 in the illustrated example has a parallelogram shape, and the opening area on the pixel 5G and the opening part on the pixel 5g have the same area. Further, since the center of gravity of each opening is provided so as to be decentered in the opposite direction with respect to the center position of each pixel, phase difference information can be obtained. In the case of FIG. 3, the gravity center position of the opening portion on the pixel 5G of the opening 7 is shifted to the left with respect to the center position of the pixel 5G, and the gravity center position of the opening portion on the pixel 5g of the opening 7 with respect to the center position of the pixel 5g. Is shifted to the right, so that left and right phase difference information can be obtained.

  In the conventional phase difference detection pixel shown in FIG. 10, the pair pixels are adjacent in the horizontal direction. However, the phase difference detection pixels do not have to be adjacent in the horizontal direction and the vertical direction. It may be adjacent in an oblique direction. Depending on the shape of the light-shielding film opening 7, the phase difference between the phase difference detection pixels 5G and 5g may have a vertical component in addition to a horizontal component.

  If the light shielding film opening 7 is separated into two openings (2a and 2b) as shown in FIG. 10 at the boundary between the phase difference detection pixels 5G and 5g, the light incident on the boundary is shielded from the boundary. The amount of incident light is greatly reduced due to kicking by the film. However, as in the present embodiment, by providing one wide light shielding film opening 7 common to two phase difference detection pixels that form a pair pixel, the amount of incident light can be increased, and phase difference information can be easily obtained. Although there is no photodiode at the boundary, the photocharge generated in the semiconductor substrate by the light incident on the boundary moves to the nearest photodiode (pixel) according to the potential gradient inside the semiconductor substrate. This photoelectric charge can also be extracted as phase difference information.

  As described above, in order to provide one common opening for adjacent pair pixels constituting the phase difference detection pixel, a configuration in which no wiring or other circuit (signal readout circuit or the like) exists at the boundary portion between the pair pixels It is preferable that

  FIG. 4 is a diagram illustrating a wiring laying method for a CMOS type solid-state imaging device that does not require a wiring, a signal readout circuit, or the like at the boundary between paired pixels constituting the phase difference detection pixel. In the solid-state imaging device having the pixel array shown in FIG. 3, conventionally, horizontal wiring such as a reset signal line, a readout signal line, and a drain line to each pixel row is usually provided for each pixel row. It is provided along the upper side of the pixel row. In addition, vertical wiring such as a power supply line and a signal output line to each pixel column is usually provided for each pixel column, for example, along the right side of each pixel column.

  On the other hand, in this embodiment, as shown in FIG. 4, the horizontal wiring 41 (shown by a solid line) provided in a meandering manner because the pixel arrangement is a honeycomb arrangement includes two pixel rows (even pixel rows and pixel rows). Vertical wiring that is provided in a meandering manner by passing horizontal wiring 41 (horizontal wiring for the upper row and horizontal wiring for the lower row) through the boundary lines of the two pixel rows, and collecting them for each adjacent odd-numbered pixel row) 42 (illustrated by a broken line) is also organized for every two pixel columns, and the vertical wiring 42 (the vertical wiring for the right column and the vertical wiring for the left column) is passed through the boundary between the two pixel columns. .

  The signal readout circuit (reset transistor, output transistor, row selection transistor, etc.) 44 provided in each pixel is preferably provided at the laying position of the corresponding horizontal wiring 41 and the vertical wiring 42 connected thereto, and further to this. In addition, a readout gate (indicated by a triangle in the figure) 45 of each pixel (photodiode) is disposed.

  This wiring structure realizes a structure in which no wiring or signal circuit exists in the boundary line portion between all the paired pixels of the same color paired pixels [(R, r), (G, g), (B, b)]. It becomes possible. Then, among each pair pixel, for example, a pair pixel of the same color (G, g is preferable) at a periodic position is preferable as a phase difference detection pixel, and one wide, at least one common to two phase difference detection pixels A light shielding film opening 7 having a side of 0.7 μm is provided. Thereby, even when the pixel is miniaturized, the sensitivity of the phase difference detection pixel is improved, and good phase difference information can be acquired.

  In the above-described embodiment, a CMOS solid-state image sensor having a pixel arrangement of honeycomb pixels has been described. However, a CCD solid-state image sensor can be similarly realized. In this case, by adopting a configuration in which one vertical charge transfer path (VCCD) is shared for every two pixel columns, a structure in which the vertical charge transfer path does not come to the boundary portion between the left and right paired pixels can be achieved. .

  FIG. 5A is a schematic cross-sectional view taken along the line A-A ′ in FIG. 4. A plurality of n regions 52 (including 52a and 52b) each forming a photodiode are formed on the surface portion of the p-type semiconductor substrate 51. A horizontal wiring 41 and a vertical wiring 42 are stacked on the upper surface layer of the semiconductor substrate 51 via an insulating layer, and a light shielding film 53 is stacked thereon.

  In the present embodiment, because of the wiring structure in which the horizontal wiring 41 is provided every other pixel row and the vertical wiring 42 is provided every other pixel column, the diagonally adjacent pixel (see FIG. 2) in which the same color filters (see FIG. 2) are stacked. Between the n regions), as shown in FIG. 5A, the wirings 41 and 42 are not laid.

  The light-shielding film 53 is provided with the light-shielding film opening 6 shown in FIG. 3 that opens above the respective normal pixels, and at the top of the two phase difference detection pixels 52a and 52b, a common one illustrated in FIG. A light shielding film opening 7 is provided.

  Light that has entered through the light-shielding film opening 7 without any wiring or signal readout circuit at the boundary between the phase difference detection pixels 52 a and 52 b generates a photocharge in the semiconductor substrate 51. This photocharge flows into either of the n regions 52a and 52b according to the potential gradient.

  In the embodiment of FIG. 5A, the light shielding film 53 is provided separately from the wirings 41 and 42. However, as shown in FIG. 5B, the horizontal wiring 41 and the vertical wiring 42 are used as original wirings. Apart from this, it is also possible to extend this to the pixel boundary and use it as a light shielding film.

  In FIG. 5B, an n region 52 (including 52a and 52b) is formed on the surface portion of a p-type semiconductor substrate 51, and a horizontal wiring 41 and a vertical wiring 42 are interposed above the semiconductor substrate 51 with an insulating layer interposed therebetween. Are stacked. As described above, the wirings 41 and 42 are not laid between paired pixels adjacent to the same color diagonally. For this reason, in the illustrated example, the wires 41 and 42 are extended between the paired pixels to be extended wires 41a and 42a, and the wires 41, 42, 41a, and 42a are used as a light shielding film. Of course, it is natural that the extension wirings 41a and 42a are not in electrical contact with the adjacent horizontal wiring 41 and vertical wiring 42.

  Between the pixels 52a and 52b constituting the phase difference detection pixel, the wiring 41b having the enlarged width of the horizontal wiring 41 is used as the light shielding film constituting the light shielding film opening 7.

FIG. 6 is a schematic view of the surface of a solid-state imaging device according to another embodiment of the present invention. Although similar to the embodiment of FIG. 4, the shape of one light shielding film opening 8 provided in the phase difference detection pixel is different from that of FIG. In the embodiment of FIG. 4, the light-shielding film opening 7 is a parallelogram, and the apex angle is an acute angle. When this shape is manufactured by a miniaturization technique, an acute angle portion becomes dull, the manufacturing error becomes large, and manufacturing stability may be hindered.

  Therefore, in the embodiment of FIG. 6, the acute angle portion of the light shielding film opening 8 is deleted by design from the beginning, and the planar shape of the light shielding film opening 8 is a polygonal shape. Thereby, manufacturing stability improves.

  FIG. 7 is a schematic view of the surface of a solid-state imaging device according to still another embodiment of the present invention. In the embodiment of FIG. 4, one light shielding film opening 7 of the phase difference detection pixel is a parallelogram having a different shape from the light shielding film openings 6 of other normal pixels (see FIG. 3). One light-shielding film opening common to the phase difference detection pixels has the same shape (square shape in the illustrated example) 6 as the light-shielding film openings 6 provided in other normal pixels. Manufacturing stability improves by making all the opening layouts into the same shape.

  In the above-described embodiment, the phase difference detection pixels are the same color pixels at periodic positions among all the pixels. In this case, using the detection signal of the phase difference detection pixel only as phase difference information, the phase difference detection pixel is handled in the same manner as the defective pixel, and the captured image signal of the surrounding normal pixel is interpolated to obtain the defective pixel (phase difference The subject image data is generated using the captured image signal at the (detection pixel) position.

  However, in the above-described embodiment, since the light shielding film opening of the phase difference detection pixel is a single large light shielding film opening, even the phase difference detection pixel can receive bright light. That is, the detection signal of the phase difference detection pixel can be used as a captured image signal having phase difference information.

  Therefore, all the pixels can be used as the phase difference detection pixels, and all the pair pixels described in FIG. 2 can be used as the pair pixels of the phase difference detection pixels. By making the light-shielding film openings provided for each pair of pixels into the light-shielding film openings shown in FIG. 3, it is possible to photograph a captured image signal having phase difference information in the left-right direction.

  In this case, the captured image by the incident light on the pixel on the left side of the paired pixel is an image by the incident light reversed left and right by the photographing lens, and thus is an image in which the subject is viewed with the right eye. Since the captured image by the incident light to the right pixel of the paired pixel is an image by the incident light reversed left and right by the photographing lens, the image is obtained by viewing the subject with the left eye. For this reason, it is possible to reproduce a stereoscopic image of a subject by combining a captured image viewed with the right eye and a captured image viewed with the left eye.

  However, for example, as shown in FIG. 8, the light shielding film openings can be formed into a vertically long parallelogram 55 and a horizontally long parallelogram 56 in even and odd columns. The direction in which the light-shielding film openings extend may be changed between even rows and odd rows. The shapes of the openings 55 and 56 do not have to be parallelograms, but may be a long opening 55 in one direction and a long opening 56 in a direction substantially perpendicular to the one direction.

  By passing the light shielding film opening of the vertically long parallelogram 55 shown in FIG. 8, a stereoscopic image obtained when the user views the subject in an upright state can be taken, and the light shielding film opening of the horizontally long parallelogram 56 is obtained. By passing through, a stereoscopic image obtained when the user looks at the subject lying down can be captured. That is, it is possible to capture both three-dimensional images by arranging the vertically long and horizontally long light-shielding film openings evenly on the light receiving surface of one image sensor.

  FIG. 9 is a schematic diagram of the surface of a solid-state imaging device according to another embodiment of the present invention. In the solid-state imaging device of each of the embodiments described above, the pixel array is an example of a honeycomb pixel array, but in this embodiment, the pixel array is a square lattice array.

  In a solid-state imaging device in which each pixel is arranged in a square lattice, horizontal wirings 41 for each pixel row are laid together between two pixel rows, and vertical wirings 42 for each pixel column are laid for each pixel column. . In the example shown in the drawing, one common light shielding film opening 57 is provided between the phase difference detection pixels at a periodic position among the two pixels vertically adjacent to each other without the wiring layer. Even with this configuration, the phase difference detection pixels can receive bright light, and good phase difference information can be acquired.

  In the embodiment of FIG. 9, since the two phase difference detection pixels need to be the same color, the color filter array is preferably a horizontal stripe. Or it is good to apply to the solid-state image sensor for monochrome pixel imaging, and the solid-state image sensor for 3 plate type color image imaging.

  The solid-state imaging device of the embodiment described above includes a plurality of photoelectric conversion elements that are arranged in a two-dimensional array on the substrate and each generate a signal charge corresponding to the amount of incident light, and each of the plurality of photoelectric conversion elements. A microlens having the same shape laminated on the light-receiving surface of the photoelectric conversion element and a light-shielding film provided with an opening on the light-receiving surface of the photoelectric conversion element; And the opening provided in two adjacent photoelectric conversion elements for detecting phase difference information of incident light from a subject among the photoelectric conversion elements is provided as one opening common to the two photoelectric conversion elements. Features.

  In addition, the phase difference information of the solid-state imaging device of the embodiment includes the center of gravity position of the opening portion on one light receiving surface of the two photoelectric conversion elements and the center of gravity of the opening portion on the other light receiving surface of the one opening. The position is detected by being shifted in opposite directions with respect to the center position of the light receiving surface of each of the two photoelectric conversion elements.

  Further, the plurality of photoelectric conversion elements arranged in the two-dimensional array of the solid-state imaging device according to the embodiment are arranged such that even rows are arranged at half pitches with respect to odd rows, and a square lattice is formed. Three primary color filters are arrayed in a Bayer array on the odd-numbered photoelectric conversion elements in the array, and three primary color filters are arrayed in a Bayer array on the even-numbered photoelectric conversion elements in the square lattice array. To do.

  Further, the solid-state imaging device of the embodiment is characterized in that an imaging signal corresponding to the amount of the signal charge of the photoelectric conversion device is read out by a MOS transistor circuit.

  In the solid-state imaging device of the embodiment, the wiring connected to the CMOS transistor circuit of the solid-state imaging device is laid together for every two photoelectric conversion element rows and every two photoelectric conversion element columns. .

  In the solid-state imaging device according to the embodiment, the wiring is used in place of the light shielding film, and the wiring is not provided in a portion where the wiring is not present between two adjacent photoelectric conversion elements that detect the phase difference information. In order to replace the light shielding film.

  In the solid-state imaging device of the embodiment, one side of the one opening is at least 0.7 μm.

  In the solid-state imaging device of the embodiment, the shape of the one opening is a parallelogram.

  In addition, the solid-state imaging device according to the embodiment is characterized in that the parallelogram has a polygonal shape from which an acute vertex portion is deleted.

  In the solid-state imaging device of the embodiment, the shape of the one opening is the same as the opening provided in the photoelectric conversion element that does not detect the phase difference information.

  In the solid-state imaging device of the embodiment, all of the photoelectric conversion elements formed on the substrate are photoelectric conversion elements that detect the phase difference information.

  Further, in the solid-state imaging device according to the embodiment, the one opening is provided for each of the two photoelectric conversion elements, and the first opening that is long in one direction and the first long in the direction perpendicular to the one direction. The two openings are provided in an equally mixed manner.

  Further, an imaging apparatus according to the embodiment is characterized by mounting any one of the solid-state imaging elements described above.

  According to the embodiment described above, since one common opening is provided for the two phase difference detection pixels that acquire the phase difference information, the amount of light received by the phase difference detection pixel is increased, and good phase difference information can be obtained. It becomes possible.

  Since the solid-state imaging device according to the present invention can acquire favorable phase difference information without reducing the opening of the light shielding film, the solid-state imaging device adopting the phase difference AF method and the imaging equipped with the solid-state imaging device. It is useful when applied to a device.

1,6 Light-shielding film openings 2a and 2b of normal pixels Light-shielding film openings 5 pixels of conventional phase difference detection pixels (photoelectric conversion elements)
5G, 5g Phase difference detection pixels 7, 8 Light shielding film opening 41 of phase difference detection pixel Horizontal wiring 41a, 41b Horizontal wiring extension 42 Vertical wiring 42a Vertical wiring extension 44 Signal readout circuit 45 Read gate 51 Semiconductor substrate 52 Pixel (N region (photodiode))
52a, 52b Phase difference detection pixel n region 53 Light shielding film

Claims (13)

  A plurality of photoelectric conversion elements which are arranged in a two-dimensional array on the substrate and each generate a signal charge corresponding to the amount of incident light; and a microlens having the same shape stacked on each of the plurality of photoelectric conversion elements; A light-shielding film interposed between the light-receiving surface of the photoelectric conversion element and the corresponding microlens and having an opening provided on the light-receiving surface of the photoelectric conversion element. A solid-state imaging device in which the opening provided in two adjacent photoelectric conversion elements that detect phase difference information of incident light is provided as one opening in common between the two photoelectric conversion elements. 2. The solid-state imaging device according to claim 1, wherein the phase difference information includes the center-of-gravity position of an opening portion on one light receiving surface of the two photoelectric conversion elements of the one opening and the other light receiving surface. A solid-state image sensing device that is detected by shifting the center of gravity of the opening to the center of the light receiving surface of each of the two photoelectric conversion elements in opposite directions.   3. The solid-state imaging device according to claim 1, wherein the plurality of photoelectric conversion elements arranged in the two-dimensional array are arranged such that even rows are spaced by 1/2 pitch with respect to odd rows. Three primary color filters are arrayed in Bayer array in the odd rows of photoelectric conversion elements that are arranged in a square lattice, and three primary color filters are in the even rows of photoelectric conversion elements in a square lattice array. A solid-state imaging device arranged in a Bayer array.   The solid-state imaging device according to claim 3, wherein an imaging signal corresponding to an amount of the signal charge of the photoelectric conversion device is read by a MOS transistor circuit.   5. The solid-state imaging device according to claim 4, wherein wiring connected to the MOS transistor circuit of the solid-state imaging device is laid together for every two photoelectric conversion element rows and every two photoelectric conversion element columns. Image sensor.   The solid-state imaging device according to claim 5, wherein the wiring is used in place of the light shielding film, and the wiring is not present between two adjacent photoelectric conversion elements that detect the phase difference information. Is a solid-state imaging device that extends the wiring to replace the light shielding film.   7. The solid-state imaging device according to claim 1, wherein one side of the one opening is at least 0.7 μm.   8. The solid-state imaging device according to claim 1, wherein the shape of the one opening is a parallelogram. 9.   9. The solid-state imaging device according to claim 8, wherein the parallelogram has a polygonal shape from which an acute vertex portion of the parallelogram is deleted.   10. The solid-state imaging device according to claim 1, wherein the shape of the one opening is the same shape as the opening provided in the photoelectric conversion element that does not detect the phase difference information. 11. A solid-state image sensor.   11. The solid-state imaging device according to claim 1, wherein all of the photoelectric conversion elements formed on the substrate are photoelectric conversion elements that detect the phase difference information. .   The solid-state imaging device according to claim 11, wherein the one opening is provided for each of the two photoelectric conversion elements, and a first opening that is long in one direction and a direction perpendicular to the one direction. A solid-state imaging device provided with a longitudinal second opening evenly mixed.   An image pickup apparatus on which the solid-state image pickup device according to any one of claims 1 to 12 is mounted.

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