JP2019121660A - Dicing tape integration-type semiconductor back contact film - Google Patents

Abstract

Disclosed is a dicing tape-integrated semiconductor back contact film capable of separating a semiconductor wafer without causing chipping of the semiconductor chip and peeling from the back contact film. A dicing tape having a laminated structure including a base material and an adhesive layer, and a semiconductor back contact film that is peelably adhered to the adhesive layer in the dicing tape, the semiconductor back contact film Both the linear transmittance A of infrared rays with a wavelength of 1000 nm and the linear transmittance B of infrared rays with a wavelength of 1342 nm are both 20% or more, and the ratio of the linear transmittance A and the linear transmittance B [linear transmittance A (%) / Linear transmittance B (%)] is 0.3 to 1.0. [Selection] Figure 1

Description

  The present invention relates to a dicing tape-integrated semiconductor back contact film. More particularly, the present invention relates to a dicing tape-integrated semiconductor back contact film which can be used in the process of manufacturing a semiconductor device.

  In the manufacture of a semiconductor device including a semiconductor chip to be flip-chip mounted, a semiconductor back contact film may be used as a film for forming a protective film on the so-called back surface of the chip. Moreover, such a semiconductor back contact film may be provided in the form integrated with the dicing tape (see Patent Documents 1 and 2).

  A semiconductor back contact film (dicing tape integrated semiconductor back contact film) integrated with such a dicing tape is used, for example, as follows. First, the back surface adhesive film surface of the dicing tape-integrated semiconductor back surface adhesion film is bonded to a semiconductor wafer which is a workpiece, and the back surface adhesion film is thermally cured by heating to enhance the adhesion of the back surface adhesion film to the wafer. Next, while the wafer is held by the dicing tape-integrated semiconductor back contact film, blade dicing is performed to separate the wafer into chips. In the dicing step, the wafer is cut and singulated into chips, and the back contact film is cut into small pieces of film having a chip equivalent size.

  Although the above-mentioned blade dicing is a method generally used for singulation of a semiconductor wafer, a crack and a chipping (chipping) might occur in a semiconductor chip obtained by blade dicing. When chipping occurs due to dicing, cracks may expand to the circuit surface due to expansion and contraction of the chip during heating in a mounting process to a semiconductor device, reliability test, and the like, which may lead to an increase in the defective product rate.

  In recent years, a method has been known which involves a process for expanding a dicing tape in a dicing tape-integrated semiconductor back contact film and breaking the semiconductor back contact film. In this method, for example, a surface protection film is attached to the surface (circuit formation surface) of a semiconductor wafer to protect the surface of the semiconductor wafer, and in this state, laser light is irradiated to planned division lines in the semiconductor wafer to form a modified region. By forming the semiconductor wafer, the semiconductor wafer can be easily divided at the planned dividing line, and then the back surface contact is performed to thin the semiconductor wafer, or the back surface contact is performed to thin the semiconductor wafer. Laser light is irradiated to the planned dividing line in to form a modified region, and the back surface of this semiconductor wafer is attached to the semiconductor back contact film surface of the dicing tape integrated semiconductor back contact film, and the surface protective film is peeled off. , Expand the semiconductor tape dicing tape integrated semiconductor back contact film dicing tape By stretching in two-dimensional directions including radial and circumferential direction of the wafer, together by cleaving a semiconductor wafer and a semiconductor back contact film to obtain individual semiconductor chips (semiconductor back contact film-attached semiconductor chips).

JP, 2011-151360, A International Publication No. 2014/092200

  However, in the method of forming the modified region and then stretching it to cut the semiconductor wafer, when the semiconductor wafer with the surface protection film on which the modified region is formed is attached to the semiconductor back contact film, the semiconductor at the time of attachment is used. The wafer may be cut at the modified area, and the semiconductor chip may bite into the surface protection film. As a result, the adhesion of the semiconductor wafer to the semiconductor back contact film may be insufficient, or chipping may occur due to contact with the adjacent semiconductor chip. Moreover, when peeling a surface protection film after sticking to the semiconductor back contact film of a semiconductor wafer with a surface protection film, the semiconductor chip which the outer peripheral part cut | disconnected may peel with a surface protection film.

  The present invention has been made in view of the above problems, and an object thereof is a dicing tape-integrated semiconductor capable of singulating a semiconductor wafer without causing chipping of the semiconductor chip and peeling from the back contact film. It is in providing a back contact film.

  As a result of intensive investigations to achieve the above object, the present inventors peelably adhere to a dicing tape having a laminated structure including a substrate and an adhesive layer and the adhesive layer in the dicing tape. A semiconductor back contact film is provided, and both the linear transmittance A of the infrared light of wavelength 1000 nm and the linear transmittance B of the infrared light of wavelength 1342 nm of the semiconductor back contact film are 20% or more. %) / Linear transmittance B (%)] is 0.3 to 1.0 When using a dicing tape-integrated semiconductor back contact film, the semiconductor wafer does not cause chipping of the semiconductor chip and peeling from the back contact film. It has been found that it is possible to singulate The present invention has been completed based on these findings.

  That is, the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and a semiconductor back contact film peelably in contact with the pressure-sensitive adhesive layer in the dicing tape, In the adhesive film, both the linear transmittance A of infrared light of wavelength 1000 nm and the linear transmittance B of infrared light of wavelength 1342 nm are 20% or more, and the ratio of the linear transmittance A to the linear transmittance B [linear transmittance A dicing tape-integrated semiconductor back contact film having a ratio A (%) / a linear transmittance B (%)] of 0.3 to 1.0 is provided. Such a dicing tape integrated type semiconductor back contact film can be used in the process of manufacturing a semiconductor device.

  As described above, the dicing tape-integrated semiconductor back contact film of the present invention has 20% of both the linear transmittance A of infrared light of wavelength 1000 nm and the linear transmittance B of infrared light of wavelength 1342 nm of the semiconductor back contact film. It is above. The semiconductor back contact film in the dicing tape-integrated semiconductor back contact film of the present invention having such a configuration transmits a laser beam (in particular, a laser beam including infrared rays of wavelengths 1000 nm and 1342 nm) for forming a modified region. Because the rate is high, it is possible to form a modified region on the semiconductor wafer by laser light after being attached to the semiconductor back contact film. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the semiconductor back contact film, and the semiconductor is not chipped at the time of bonding or peeling from the back contact film at the time of surface protection tape peeling. It is possible to singulate the wafer.

  The dicing tape-integrated semiconductor back contact film of the present invention is further characterized in that the ratio of the above-mentioned straight line transmittance A to the above-mentioned straight line transmittance B [line transmittance A (%) / line transmittance B (%) ] Is 0.3-1.0. When the semiconductor back contact film in the dicing tape-integrated semiconductor back contact film of the present invention has such a configuration, infrared light of both wavelengths of 1000 nm and 1342 nm can be transmitted more uniformly. An equivalent modified region can be formed on the semiconductor wafer with light. For this reason, the kind of laser beam which can be used increases and it is excellent in versatility.

  In the dicing tape-integrated semiconductor back contact film of the present invention, the ratio of the linear transmittance A ′ of infrared light in the wavelength range of 1000 to 1342 nm and the above linear transmittance B of the semiconductor back contact film [linear transmittance A ′ (%) /% It is preferable that linear transmittance | permeability B (%) is 0.3-1.0. When the semiconductor back contact film in the dicing tape-integrated semiconductor back contact film of the present invention has such a configuration, it is possible to transmit infrared rays in the wavelength range of 1000 to 1342 nm to the same extent as infrared rays of 1342 nm wavelength. An equivalent modified region can be formed on the semiconductor wafer by the laser light in the above wavelength region. For this reason, the kind of laser beam which can be used increases more and it is excellent in versatility.

  The dicing tape-integrated semiconductor back contact film of the present invention has a ratio [total light transmittance C (%) / linear transmittance D (%)] of the total light transmittance C of infrared light with a wavelength of 1342 nm to the linear light transmittance D It is preferable that it is. Since the dicing tape-integrated semiconductor back contact film of the present invention having such a configuration tends to selectively transmit laser light, the laser light is irradiated from the dicing tape side after being attached to the semiconductor back contact film. As a result, it becomes easier to form the modified region on the semiconductor wafer. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the semiconductor back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip during adhesion and peeling from the back contact film. It becomes easier.

  The dicing tape-integrated semiconductor back contact film of the present invention preferably has a haze value of 80% or less. The dicing tape-integrated semiconductor back contact film of the present invention having such a configuration is less likely to cause scattering of laser light, and therefore, after being attached to the semiconductor back contact film, irradiation of laser light from the dicing tape side is efficient. It is possible to form a modified region on a semiconductor wafer. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the semiconductor back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip during adhesion and peeling from the back contact film. It becomes easier.

  In the dicing tape-integrated semiconductor back contact film of the present invention, it is preferable that the arithmetic mean surface roughness of both the base back surface and the semiconductor back contact film surface is 100 nm or less. The dicing tape-integrated semiconductor back contact film of the present invention having such a configuration is less likely to cause scattering of laser light, and therefore, after being attached to the semiconductor back contact film, irradiation of laser light from the dicing tape side is efficient. It is possible to form a modified region on a semiconductor wafer. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the semiconductor back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip during adhesion and peeling from the back contact film. It becomes easier.

  When the dicing tape-integrated semiconductor back contact film of the present invention is used, it is possible to singulate a semiconductor wafer without causing chipping of the semiconductor chip and peeling from the back contact film.

It is the schematic (front sectional view) which shows one Embodiment of the dicing tape integrated type semiconductor back contact film. It is the schematic (front sectional view) which shows other one Embodiment of the dicing tape integrated type semiconductor back contact film. It is the schematic (front sectional drawing) which shows one Embodiment of a wafer thinning process. It is the schematic (front sectional drawing) which shows one Embodiment of a sticking process. It is the schematic (front sectional drawing) which shows one Embodiment of a singulation process. It is the schematic (front sectional drawing) which shows one Embodiment of a pick-up process. It is the schematic (front sectional drawing) which shows one Embodiment of a flip chip mounting process.

[Dicing tape integrated semiconductor back contact film]
The dicing tape-integrated semiconductor back contact film (sometimes simply referred to as "dicing tape integrated back contact film") of the present invention is a dicing tape having a laminated structure including a substrate and an adhesive layer, and the above-mentioned dicing tape And a semiconductor back contact film (sometimes referred to simply as a "back contact film") that is in close contact with the pressure-sensitive adhesive layer in the above. In the present specification, the "surface" of a semiconductor (work) refers to the surface on which bumps for flip chip mounting of the work are formed, and the "back" is the opposite side of the surface, that is, the bumps are formed. It means the side that is not The “back contact film” is a film used in close contact with the back of the semiconductor, and includes a film (semiconductor back protection film) for forming a protective film on the back (so-called back) of the semiconductor chip.

  The back contact film has an infrared linear transmittance (sometimes referred to as "linear transmittance A") of a wavelength of 1000 nm of 20% or more, preferably 28% or more, more preferably 50% or more, and still more preferably 60 % Or more. Since the back contact film has a high transmittance of laser light including infrared rays near a wavelength of 1000 nm for forming the modified region by having the linear transmittance A of 20% or more, after being attached to the back contact film It is possible to form a modified region on a semiconductor wafer by laser light. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Is possible. In the present specification, the linear transmittance of the back contact film and the dicing tape-integrated back contact film can be measured using a known spectrophotometer.

  The back contact film has an infrared linear transmittance (sometimes referred to as "linear transmittance B") of wavelength 1342 nm of 20% or more, preferably 40% or more, more preferably 50% or more, and still more preferably 70. % Or more. When the linear transmittance B is 20% or more, the back contact film has a high transmittance of laser light containing infrared rays with a wavelength of 1342 nm for forming a modified region, and thus the semiconductor after being attached to the back contact film It is possible to form a modified region on the wafer by laser light. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Is possible.

  The ratio of the linear transmittance A to the linear transmittance B (linear transmittance A (%) / linear transmittance B (%)) of the back contact film is 0.3 to 1.0, preferably 0. 0.5 to 1.0, more preferably 0.55 to 1.0, still more preferably 0.75 to 1.0. If the above ratio is within the above range, infrared rays of both wavelengths of 1000 nm and 1342 nm can be more uniformly transmitted, so that equivalent modified regions can be formed on the semiconductor wafer with laser light of both wavelengths. . For this reason, the kind of laser beam which can be used increases and it is excellent in versatility.

Straight line transmissivity of infrared light of wavelength 1064 nm (linear transmissivity A ₁ ), linear transmission of infrared ray of wavelength 1080 nm (linear transmissivity A ₂ ), and linear transmissivity of infrared ray of wavelength 1099 nm of the back contact film The ratio of A ₃ ) to the above linear transmittance B (ie, [linear transmittance A ₁ (%) / linear transmittance B (%)], [linear transmittance A ₂ (%) / linear transmittance B ( %, And [Linear transmittance A ₃ (%) / Linear transmittance B (%)] are all preferably 0.3 to 1.0, and more preferably 0.5 to 1. It is 0, more preferably 0.7 to 1.0. In particular, the ratio [linear transmittance A '(%) / linear transmittance B (%)] of the linear transmittance (linear transmittance A') of the infrared ray in the wavelength range of 1000 to 1342 nm and the above linear transmittance B is within the above range Is preferred. That is, it is particularly preferable that the ratio of all the linear transmittances A ′ of infrared rays in the wavelength range of 1000 to 1342 nm to the linear transmittance B is in the above range. All the wavelengths 1064 nm, 1080 nm, 1099 nm, and 1342 nm possessed by the plurality of types of laser beams capable of forming the modified region in the semiconductor wafer when the above ratio is within the above range (particularly, the region of 1000-1342 nm wavelength) Since all infrared rays in the above can be transmitted to the same extent as infrared rays with a wavelength of 1342 nm, equivalent modified regions can be formed on the semiconductor wafer with laser light in the above wavelength range. For this reason, the kind of laser beam which can be used increases more and it is excellent in versatility.

  One embodiment of the dicing tape-integrated back contact film of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing an embodiment of a dicing tape-integrated back contact film. As shown in FIG. 1, the dicing tape-integrated back contact film 1 includes a dicing tape 10 and a back contact film 20 laminated on the pressure-sensitive adhesive layer 12 of the dicing tape 10. In the dicing tape-integrated back contact film 1 shown in FIG. 1, the back contact film 20 has a single-layer structure of the adhesive layer 21. The dicing tape-integrated back contact film 1 is used in a singulation step in the process of obtaining a semiconductor chip with a back contact film in the manufacture of a semiconductor device. The dicing tape 10 in the dicing tape-integrated back contact film 1 has a laminated structure including a substrate 11 and an adhesive layer 12. The back contact film 20 has the same size as the workpiece so as to correspond to the semiconductor wafer which is the workpiece to be bonded.

(Adhesive layer)
The back contact film includes at least an adhesive layer having a bonding surface (for example, 21a in FIG. 1) to the back of the work. The adhesive layer may be thermosetting so that it can be adhered and protected to the back of the work by heat curing after being attached to the back of the work. When the adhesive layer is non-thermosetting and does not have thermosetting property, the adhesive layer is adhered to the back surface of the work by adhesion (wettability) at the interface due to pressure etc. It is possible. The adhesive layer may have a single layer structure or a multilayer structure.

  It is preferable that the adhesive composition (resin composition) which forms the said adhesive bond layer and an adhesive bond layer contains a thermoplastic resin. When the adhesive layer has a thermosetting property, the adhesive composition for forming the adhesive layer and the adhesive layer may contain a thermosetting resin and a thermoplastic resin, or may be reacted with a curing agent. It may contain a thermoplastic resin having a thermosetting functional group which can form a bond. When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, the adhesive composition does not have to contain a thermosetting resin (such as an epoxy resin).

  The thermoplastic resin in the adhesive layer has, for example, a binder function. Examples of the thermoplastic resin include acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin Polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as polyethylene terephthalate (PET) or polybutylene terephthalate (PBT), polyamideimide resin And fluorine resins. The thermoplastic resin may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and high heat resistance.

  The said acrylic resin is a polymer containing the structural unit derived from an acryl-type monomer (The monomer component which has a (meth) acryloyl group in a molecule | numerator) as a structural unit of a polymer. It is preferable that the said acrylic resin is a polymer which contains the structural unit originating in a (meth) acrylic acid ester most by mass ratio. In addition, an acrylic resin may use only 1 type and may use 2 or more types. Furthermore, in the present specification, “(meth) acrylic” represents “acrylic” and / or “methacrylic” (any one or both of “acrylic” and “methacrylic”), and the same applies to others. .

  As said (meth) acrylic acid ester, the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group is mentioned, for example. Examples of the hydrocarbon group-containing (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Examples of the (meth) acrylic acid alkyl ester include methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (lauryl ester), tridecyl ester, tetradecyl ester Hexadecyl ester, octadecyl ester, eicosyl ester and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester of (meth) acrylic acid and benzyl ester. Examples of the hydrocarbon group-containing (meth) acrylic acid ester having an alkoxy group include those in which one or more hydrogen atoms in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth) acrylic acid ester are substituted with an alkoxy group, For example, 2-methoxymethyl ester of (meth) acrylic acid, 2-methoxyethyl ester, 2-methoxybutyl ester and the like can be mentioned. The hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more.

  The said acrylic resin is a structure derived from the other monomer component which can be copolymerized with the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group for the purpose of modification, such as cohesion force and heat resistance. It may contain units. As said other monomer component, functional group containing functional groups, such as a carboxy group containing monomer, an acid anhydride monomer, a hydroxyl group containing monomer, a glycidyl group containing monomer, a sulfonic acid group containing monomer, a phosphoric acid group containing monomer, acrylamide, acrylonitrile etc. are mentioned, for example. Monomers etc. are mentioned. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid and the like. Examples of the acid anhydride monomer include maleic anhydride, itaconic anhydride and the like. Examples of the above-mentioned hydroxy group-containing monomers include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomers include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropane sulfonic acid, (meth) acrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate, (meth Acryloyloxy naphthalene sulfonic acid etc. are mentioned. As said phosphoric acid group containing monomer, 2-hydroxyethyl acryloyl phosphate etc. are mentioned, for example. The other monomer components may be used alone or in combination of two or more.

  The acrylic resin that may be contained in the adhesive layer is suitably selected from butyl acrylate, ethyl acrylate, acrylonitrile and acrylic acid, from the viewpoint of achieving both the adhesiveness to the work and good cleavability at the time of expansion. It is preferably a copolymer of selected monomers.

  When the adhesive layer contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting resin. Polyimide resin etc. are mentioned. The said thermosetting resin may use only 1 type, and may use 2 or more types. An epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like which may cause corrosion of the semiconductor chip tends to be small. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

  Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, hydrogenated bisphenol A epoxy resin, bisphenol AF epoxy resin, biphenyl resin Cresol novolac epoxy resin such as epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, phenol novolac epoxy resin, ortho cresol novolac epoxy resin, trishydroxyphenylmethane epoxy resin, tetraphenylolethane epoxy resin etc A multifunctional epoxy resin is mentioned. The said epoxy resin may use only 1 type, and may use 2 or more types. Among them, a phenol novolac epoxy resin, an ortho cresol novolac epoxy resin, a biphenyl epoxy resin, a trishydroxyphenylmethane epoxy resin, tetrapheny, since they are rich in reactivity with a phenol resin as a curing agent and excellent in heat resistance. Roll ethane type epoxy resin is preferred.

  As a phenol resin which can act as a hardening agent of an epoxy resin, novolak-type phenol resins, such as phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert- butylphenol novolak resin, nonylphenol novolac resin, etc. are mentioned, for example. Moreover, as the said phenol resin, polyoxystyrenes, such as a resol type phenol resin and polypara oxystyrene, are also mentioned. The said phenol resin may use only 1 type, and may use 2 or more types.

  From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer, the phenol resin preferably has a hydroxyl group in the phenol resin of preferably 0. 1 per equivalent of epoxy group in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

  When the adhesive layer contains a thermosetting resin, the content of the thermosetting resin is 5 to 60% by mass based on the total mass of the adhesive layer from the viewpoint of appropriately curing the adhesive layer. Preferably, it is 10 to 50% by mass.

  When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth) acrylic acid ester as the largest structural unit in mass ratio. Examples of the hydrocarbon group-containing (meth) acrylic acid ester include those exemplified as the hydrocarbon group-containing (meth) acrylic acid ester forming an acrylic resin as a thermoplastic resin that can be contained in the above-mentioned adhesive layer. Can be mentioned. On the other hand, as a thermosetting functional group in a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxy group, a hydroxyl group, an isocyanate group etc. are mentioned, for example. Among them, glycidyl group and carboxy group are preferable. That is, as a thermosetting functional group containing acrylic resin, a glycidyl group containing acrylic resin and a carboxy group containing acrylic resin are especially preferable. Moreover, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and as the curing agent, for example, it is exemplified as a crosslinking agent which can be included in a radiation curable adhesive for forming an adhesive layer described later. The thing is mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, and, for example, various phenol resins described above can be used.

  The adhesive layer preferably contains a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is contained, the curing reaction of the resin component can be sufficiently advanced to cure the adhesive layer, and the curing reaction rate can be increased. Examples of the thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogenborane compounds. Examples of the imidazole compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole and 2-phenyl- 4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazo Lilium trimellitate, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl- (1 ')]-Ethyl-s-triazine, 2,4-diamide -6- [2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl- Examples thereof include s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole and the like. Examples of triphenylphosphine compounds include triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyl tolyl phosphine, tetraphenyl phosphonium bromide, methyl triphenyl phosphonium and methyl triphenyl Phosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride and the like can be mentioned. The triphenylphosphine-based compounds also include compounds having both a triphenylphosphine structure and a triphenylborane structure. As such a compound, for example, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphine triphenylborane and the like can be mentioned. Examples of amine compounds include monoethanolamine trifluoroborate, dicyandiamide and the like. Examples of trihalogen borane compounds include trichloroborane and the like. The said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.

  The adhesive layer may contain a filler. By including the filler, it is easy to adjust physical properties such as the elastic modulus of the adhesive layer, the strength at yield point, and the elongation at break. As a filler, an inorganic filler and an organic filler are mentioned. As a constituent material of the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitrided Silicon, boron nitride, crystalline silica, amorphous silica and the like can be mentioned. Moreover, as a constituent material of the inorganic filler, single metals such as aluminum, gold, silver, copper, nickel and the like, alloys, amorphous carbon, graphite and the like can also be mentioned. Examples of the constituent material of the organic filler include poly (methyl methacrylate) (PMMA), polyimide, polyamide imide, polyether ether ketone, polyether imide, and polyester imide. The said filler may contain only 1 type, and may contain 2 or more types.

  The filler may have various shapes such as sphere, needle, and flake. The average particle diameter of the filler is preferably 10 to 1000 nm, more preferably 20 to 700 nm, and more preferably 30 to 500 nm. That is, the adhesive layer preferably contains a nanofiller. When the nano filler of such a particle size is contained as a filler, it is excellent by cleavability about the back contact film which will be fragmented. In addition, when the average particle diameter is small, the linear transmittance of infrared rays in the wavelength range of 1000 to 1342 nm tends to be high, and the above-mentioned [linear transmittance A '/ linear transmittance B] tends to be large. The average particle diameter of the filler can be determined, for example, using a light intensity type particle size distribution analyzer (trade name “LA-910”, manufactured by Horiba, Ltd.). Moreover, 10 mass% or more is preferable, as for the content rate of the said filler in case an adhesive bond layer contains a filler, More preferably, it is 15 mass% or more, More preferably, it is 20 mass% or more. 60 mass% or less is preferable, as for the said content rate, 50 mass% or less is more preferable, More preferably, it is 45 mass% or less. In addition, when the said content rate is small, there exists a tendency for a linear transmittance to improve.

  The adhesive layer may contain a colorant. As a coloring agent in an adhesive bond layer, the thing illustrated as a coloring agent which the below-mentioned laser mark layer may contain is mentioned, for example. The coloring agent is a black-based coloring from the viewpoint of ensuring high contrast between the marking location by laser marking on the laser mark layer side and the other location in the back contact film and ensuring good visibility of the marking information. It is preferably an agent. The coloring agents may be used alone or in combination of two or more. In addition, in view of achieving the above-described good visibility of imprint information by laser marking, the content ratio of the coloring agent in the adhesive layer is preferably 0.5% by mass or more, more preferably 1% by mass or more, and further preferably Is 2% by mass or more. The content ratio is preferably 10% by mass or less, more preferably 8% by mass or less, and still more preferably 5% by mass or less.

  The adhesive layer may contain other components as needed. As said other component, a flame retardant, a silane coupling agent, an ion trap agent etc. are mentioned, for example. Examples of the flame retardant include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complexed metal hydroxides, phosphazene compounds, antimony trioxide, Antimony oxide, brominated epoxy resin etc. are mentioned. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, “IXE-300” manufactured by Toagosei Co., Ltd.), and zirconium phosphate having a specific structure (eg, “IXE-100”), magnesium silicate (eg “Kyoward 600” manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (eg “Kyoward 700 manufactured by Kyowa Chemical Industry Co., Ltd.”) Compounds capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such a compound include triazole compounds, tetrazole compounds and bipyridyl compounds. Among these, triazole compounds are preferable from the viewpoint of the stability of the complex formed with the metal ion. As such triazole compounds, for example, 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-) 5-methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) ) 5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-tert-amylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-tert-octyl-6'-tert-butyl-4'-methyl-2,2'-methylenebi Phenol, 1- (2 ′, 3′-hydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t -Pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5-t-butylphenyl) -2H-benzotriazole, 3- (2H-benzotriazole-2-) Yl) -5- (1,1-dimethylethyl) -4-hydroxy, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl ] Propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole) -2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) Phenol, 2- (2H-benzotriazol-2-yl) -4-tert-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) -Benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1 1,1-Dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol ], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, methyl-3- [3- (2H-benzotriazol-2-yl) -5-) t-Butyl-4-hydroxyphenyl] propionate and the like can be mentioned. Also, predetermined hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds and polyphenol compounds can be used as the ion trap agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralpine, tannin, gallic acid, methyl gallate, pyrogallol and the like. The other components may be used alone or in combination of two or more.

  The tensile storage elastic modulus (before curing) at 23 ° C. of the adhesive layer is not particularly limited, but is preferably 0.5 GPa or more, more preferably 0.75 GPa or more, and still more preferably 1 GPa or more. It can prevent adhering to a conveyance carrier tape as said tensile storage elastic modulus is 0.5 GPa or more. The upper limit of the tensile storage modulus at 23 ° C. is, for example, 50 GPa. The tensile storage elastic modulus can be adjusted by the type and content of the resin component, the type and content of the filler, and the like.

  The thickness of the adhesive layer is, for example, 2 to 200 μm, preferably 4 to 160 μm, more preferably 6 to 100 μm, and still more preferably 8 to 80 μm.

  The back contact film may have a single-layer structure comprising the above-mentioned adhesive layer, or may have a multilayer structure. The back contact film which is a multilayer structure has, for example, a laminated structure including the above-mentioned adhesive layer and a laser mark layer capable of giving imprint information by laser marking. In the back contact film having such a multilayer structure, the adhesive layer is thermally cured by heat treatment at 120 ° C. for 2 hours, while the laser mark layer is not substantially thermally cured, While heat treatment without heat treatment at 120 ° C. for 2 hours does not substantially heat cure both the adhesive layer and the laser mark layer, a thermosetting-less laminate structure, while the adhesive layer is cured by radiation, The laser mark layer can have a laminated structure without thermosetting and the like that the thermosetting is not substantially cured. In the back contact film, the layer which is not substantially thermally cured by heat treatment at 120 ° C. for 2 hours includes a thermosetting layer which has already been cured.

  One embodiment of the dicing tape-integrated back adhesion film of the present invention in the case where the back adhesion film has a multilayer structure including an adhesive layer and a laser mark layer is shown in FIG. In the dicing tape-integrated back contact film 1 shown in FIG. 2, the back contact film 20 has a multilayer structure including an adhesive layer 21 and a laser mark layer 22, and the laser mark layer 22 is an adhesive layer 12 in the dicing tape 10. In close contact with each other so as to be removable. When the adhesive layer 21 and the laser mark layer 22 have the positional relationship shown in FIG. 2, the back contact film 20 may be attached to the back of the work, and may be thermally cured if necessary.

(Laser mark layer)
In the case where the back contact film has a multilayer structure having an adhesive layer and a laser mark layer, laser marking is applied to the surface of the laser mark layer in the process of manufacturing the semiconductor device. In the dicing tape-integrated back contact film, the laser mark layer is preferably located on the dicing tape side in the back contact film and in close contact with the dicing tape and the pressure-sensitive adhesive layer thereof. Further, the laser mark layer and / or the adhesive layer may be a thermosetting layer having a thermosetting property, or may be a non-thermosetting layer having no thermosetting property. When the laser mark layer is non-thermosetting, the thermosetting component may be a thermosetting layer (thermocured layer). The laser mark layer is formed by curing a thermosetting resin composition layer formed of a resin composition forming the laser mark layer.

  It is preferable that the resin composition which forms a laser mark layer and a laser mark layer contains a thermoplastic resin. When the laser mark layer is a thermosetting layer (that is, a thermosetting layer or a thermosetting layer), the resin composition forming the laser mark layer or the laser mark layer is a thermosetting resin and a thermoplastic resin. And a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to form a bond.

  The thermoplastic resin is, for example, responsible for the binder function in the laser mark layer, and examples of the thermoplastic resin include those exemplified as the thermoplastic resin which the above-mentioned adhesive layer may contain. The thermoplastic resin may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and high heat resistance.

  The acrylic resin which may be contained in the laser mark layer and the resin composition for forming the laser mark layer is from the viewpoint of achieving both the visibility of the imprinted information by laser marking and the good cleavability at the time of expanding. It is preferable that it is a copolymer of monomers appropriately selected from ethyl, acrylonitrile and acrylic acid.

  When the thermosetting resin is contained together with the thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, thermosetting polyimide resin and the like. Be The said thermosetting resin may use only 1 type, and may use 2 or more types. An epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like which may cause corrosion of the semiconductor chip tends to be small. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

  As said epoxy resin, what was illustrated as an epoxy resin which the above-mentioned adhesive bond layer may contain is mentioned. The said epoxy resin may use only 1 type, and may use 2 or more types.

  As a phenol resin which can act as a hardening agent of an epoxy resin, what was illustrated as a phenol resin which the above-mentioned adhesive agent layer may contain is mentioned. The said phenol resin may use only 1 type, and may use 2 or more types.

  In the resin composition for forming the laser mark layer and the laser mark layer, from the viewpoint of sufficiently advancing the curing reaction of the epoxy resin and the phenol resin, the phenol resin is said per 1 equivalent of epoxy group in the epoxy resin component. The hydroxyl group in the phenolic resin is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

  When the laser mark layer and the resin composition forming the laser mark layer contain a thermosetting resin, the content ratio of the thermosetting resin is the total mass of the laser mark layer or the resin composition forming the laser mark layer. On the other hand, 5 to 60% by mass is preferable, and more preferably 10 to 50% by mass.

  When the resin composition which forms a laser mark layer and a laser mark layer contains the thermoplastic resin which has a thermosetting functional group, as the thermoplastic resin concerned, the thermosetting functional group content acrylic which the above-mentioned adhesive layer may contain may be included. What was illustrated as resin is mentioned. Moreover, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and as the curing agent, for example, those exemplified as a crosslinking agent which may be included in a radiation-curable pressure-sensitive adhesive for pressure-sensitive adhesive layer formation described later Can be mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, and, for example, various phenol resins described above can be used.

  It is preferable that the resin composition which forms a laser mark layer and a laser mark layer contains a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is contained, the curing reaction of the resin component can be sufficiently advanced in curing of the resin composition, and the curing reaction rate can be increased. As said thermosetting catalyst, what was illustrated as a thermosetting catalyst which the above-mentioned adhesive bond layer may contain is mentioned. The said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.

  The laser mark layer and the resin composition forming the laser mark layer may contain a filler. By including the filler, it is easy to adjust physical properties such as the elastic modulus of the laser mark layer, the strength at yield point, and the elongation at break. As a filler, what was illustrated as a filler which the above-mentioned adhesive bond layer may contain is mentioned. The said filler may contain only 1 type, and may contain 2 or more types.

  The filler may have various shapes such as sphere, needle, and flake. The average particle diameter of the filler is preferably 10 to 1000 nm, more preferably 20 to 700 nm, and more preferably 30 to 500 nm. That is, it is preferable that the resin composition which forms a laser mark layer and a laser mark layer contains a nano filler. When the nano filler of such a particle size is contained as a filler, it is excellent by division property and cutting property about the back contact film which will be fragmented. In addition, when the average particle diameter is small, the linear transmittance of infrared rays in the wavelength range of 1000 to 1342 nm tends to be high, and the above-mentioned [linear transmittance A '/ linear transmittance B] tends to be large. 10 mass% or more is preferable, as for the content rate of the said filler in case a laser mark layer or the said resin composition contains a filler, More preferably, it is 15 mass% or more, More preferably, it is 20 mass% or more. 60 mass% or less is preferable, as for the said content rate, 50 mass% or less is more preferable, More preferably, it is 45 mass% or less. In addition, when the said content rate is small, there exists a tendency for a linear transmittance to improve.

  The laser mark layer and the resin composition forming the laser mark layer may contain a colorant. When the coloring agent is contained, excellent marking property and appearance can be exhibited, and laser marking can be performed to give various information such as character information and graphic information. In addition, by appropriately selecting the color of the colorant, it is possible to make the information (text information, graphic information, etc.) given by the marking excellent in visibility. Furthermore, the choice of colorants makes it possible to color-sort by product.

  The colorant may be a pigment or a dye. Examples of the colorant include black colorants, cyan colorants, magenta colorants, yellow colorants and the like. Information is imprinted on the laser mark layer by laser marking, and a black-based coloring agent is preferable from the viewpoint of more excellent visibility of the information. The coloring agent may contain only one kind, or may contain two or more kinds.

  Examples of black colorants include azo pigments such as carbon black, graphite (graphite), copper oxide, manganese dioxide, azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite, magnetite, Examples thereof include chromium oxide, iron oxide, molybdenum disulfide, complex oxide black pigment, anthraquinone organic black pigment, azo organic black pigment and the like. Examples of carbon black include furnace black, channel black, acetylene black, thermal black, lamp black and the like. As a blackish coloring agent, C.I. I. Solvent Black 3, 7, 7, 22, 27, 29, 34, 43, 70; I. Direct Black 17, 19, 22, 22, 32, 38, 51, 71; I. Acid Black 1, 2, 24, 26, 26, 31, 48, 52, 107, 109, 110, 119, 154; I. Disperse Black 1, 3, 10, 24; C.I. I. Pigment black 1, 7 and the like. In addition, metal oxides containing metal elements such as Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti, Ag, Al and the like, black pigments such as metal nitrogen compounds and the like can be mentioned.

  Examples of cyan colorants include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; C.I. I. Acid Blue 6, 45; C.I. I. Pigment blue 1, 2, 3, 13, 15, 15: 1, 15: 2, 15: 3, 15: 4, 15: 5, 15: 6, 16, 17, 17. 17: 1, 18, 18, 22, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. Pigment green 7 and the like.

  Examples of magenta colorants include C.I. I. Solvent Red 1, 3, 8, 23, 23, 24, 25, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, 81 100, 109, 111, 121, 122; C.I. I. Disperse thread 9; C.I. I. Solvent violet 8, 13; 14, 21 and 27; C.I. I. Disperse Violet 1; C.I. I. Basic Red 1, 2, 9, 12, 13, 14, 15, 17, 18, 18. 22, 23, 24, 27, 29, 32, 32, 34, and so on. 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15 and 21, 21, 25, 26, 27 and 28 etc. may be mentioned. In addition, examples of magenta colorants include C.I. I. Pigment red 1, 2, 3, 4, 5, 5, 6, 7, 8, 9, 10, 11, 12, 12, 13, 14, 15, 16, 17, 18, 19, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, Same 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, 81 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. Pigment violet 3, 9, 19, 23, 31, 31, 32, 33, 36, 38, 43, 50; I. Butt red 1, 2, 10, 13, 15, 15, 23, 29, 35 and the like.

  Examples of yellow colorants include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162; I. Pigment oranges 31, 43; C.I. I. Pigment yellow 1, 2, 3, 4, 5, 5, 6, 7, 7, 10, 11, 12, 13, 14, 15, 16, 17, 23, 23. 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, The same 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; C.I. I. Bat Yellow 1, 3, and 20 etc. may be mentioned.

  Moreover, as other pigments, for example, indium tin oxide, antimony tin oxide, zinc oxide, lead white, lithopone, titanium oxide, chromium oxide, iron oxide, aluminum oxide, precipitated barium sulfate, barite powder, red lead, oxide Iron red, yellow lead, zinc yellow (one zinc yellow, two zinc yellows), ultramarine blue, Prussia blue (potassium ferrocyanide), zircon gray, praseodymium yellow, chromium titanium yellow, chromium green, peacock, Victoria Green, bitumen, vanadium zirconium blue, chromium tin pink, porcelain enamel, salmon pink, titanium black, tungsten compound, metal boride and the like.

  The content ratio of the coloring agent is, for example, relative to the total mass of the resin composition forming the laser mark layer or the laser mark layer, from the viewpoint of realizing high visibility of information imprinted on the laser mark layer by laser marking. The content is 0.5% by mass or more, preferably 1% by mass or more, and more preferably 2% by mass or more. The content ratio is, for example, 10% by mass or less, preferably 8% by mass or less, and more preferably 5% by mass or less.

  The laser mark layer and the resin composition for forming the laser mark layer may contain other components as required. As said other component, the flame retardant, the silane coupling agent, the ion trap agent etc. which were illustrated as another component which the above-mentioned adhesive agent layer may contain are mentioned. The other components may be used alone or in combination of two or more.

  The tensile storage elastic modulus (after curing) of the laser mark layer at 23 ° C. is not particularly limited, but is preferably 0.5 GPa or more, more preferably 0.75 GPa or more, and still more preferably 1 GPa or more. It can prevent adhering to a conveyance carrier tape as said tensile storage elastic modulus is 0.5 GPa or more. In addition, the back side of the workpiece can be protected more firmly after heat curing. The upper limit of the tensile storage modulus at 23 ° C. is, for example, 20 GPa. The tensile storage elastic modulus can be adjusted by the type and content of the resin component, the type and content of the filler, and the like.

  When the back contact film has a multilayer structure having an adhesive layer and a laser mark layer, the ratio of the thickness of the laser mark layer to the thickness of the adhesive layer is preferably 1 or more, more preferably 1.5 or more, More preferably, it is 2 or more. The ratio is, for example, 8 or less.

  The thickness of the laser mark layer in the case of having a laser mark layer is, for example, 2 to 180 μm, preferably 4 to 160 μm.

  The thickness of the back contact film is, for example, 2 to 200 μm, preferably 5 to 50 μm, more preferably 7 to 45 μm, and still more preferably 10 to 40 μm. When the thickness is 2 μm or more, the back surface of the workpiece can be protected more firmly. If the thickness is 200 μm or less, the workpiece after close contact can be made thinner.

  Although the content rate of the coloring agent in a back contact film is not specifically limited, 0.5 mass% or more is preferable, More preferably, it is 1 mass% or more, More preferably, it is 2 mass% or more. The content ratio is preferably 10% by mass or less, more preferably 8% by mass or less, and still more preferably 5% by mass or less. When the content ratio is 10% by mass or less, a back contact film having a linear transmittance of 20% or more for both infrared rays with wavelengths of 1000 nm and 1342 nm can be easily produced.

  The arithmetic average surface roughness of the back contact film surface (the side opposite to the side in close contact with the dicing tape, ie, the surface to which the semiconductor wafer is attached) is preferably 100 nm or less, more preferably 80 nm or less, and further preferably Preferably it is 60 nm or less. When the arithmetic average surface roughness of the back contact film surface is 100 nm or less, scattering of the laser light irradiated to form the modified region is less likely to occur. Therefore, after the semiconductor wafer is attached to the back contact film, the dicing tape side It becomes possible to efficiently form the modified region on the semiconductor wafer by the irradiation of the laser beam from the above. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Becomes easier.

  Although the peeling force (Peeling angle 180 °, peeling speed 300 mm / min, after curing) of the back contact film to the pressure-sensitive adhesive layer is not particularly limited, it is preferably 10 N / 20 mm or less, more preferably 5 N / 20 mm or less is there. When the peeling force is 10 N / 20 mm or less, the chip can be easily picked up from the dicing tape at the time of pickup. The peeling force is preferably 0.02 N / 20 mm or more, more preferably 0.05 N / 20 mm or more. When the peeling force is 0.02 N / 20 mm or more, the back contact film after curing at the time of singulation becomes difficult to peel from the dicing tape.

(Base material)
The substrate in the dicing tape is an element functioning as a support in the dicing tape and the dicing tape-integrated back contact film. As a base material, a plastic base material (especially plastic film) is mentioned, for example. The substrate may be a single layer, or a laminate of similar or different substrates.

  Examples of the resin constituting the plastic base include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene , Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resins such as butene copolymer, ethylene-hexene copolymer; polyurethane; polyester such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); polycarbonate; polyimide; Polyetheretherketone; polyetherimides; aramid, polyamide such as wholly aromatic polyamide; polyphenyl sulfide; fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, and the like. In the expand step for securing good heat shrinkability in the substrate and widening the distance between separated semiconductor chips, the chip separation distance is maintained using partial heat shrinkage of the dicing tape or the substrate From the viewpoint of ease of operation, the substrate preferably contains ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component. In addition, with the main component of a base material, it is set as the component which occupies the largest mass ratio in a structural component. The said resin may use only 1 type and may use 2 or more types. When the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer as described later, the substrate preferably has radiation transparency.

  When the substrate is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is heat shrinkable in the at least one direction. If it has heat shrinkability, it becomes possible to heat shrink the outer peripheral portion of the semiconductor wafer of the dicing tape, thereby expanding the distance between the separated semiconductor chips with the back contact film. Since it can be fixed, it is possible to easily pick up the semiconductor chip. In order for the substrate and the dicing tape to have isotropic heat shrinkability, the substrate is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching a non-stretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material and the dicing tape preferably have a thermal contraction rate of 1% or more, more preferably 3% or more, and still more preferably in a heat treatment test performed under conditions of a heating temperature of 100 ° C. and a heating time treatment of 60 seconds. It is 5% or more, particularly preferably 7% or more. The heat shrinkage rate is preferably a heat shrinkage rate in at least one direction of the MD direction and the TD direction.

  The surface on the pressure-sensitive adhesive layer side of the substrate is, for example, corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment, high-piezoelectric shock treatment, for the purpose of enhancing adhesion and retention with the pressure-sensitive adhesive layer. Physical treatments such as exposure treatment and ionizing radiation treatment; chemical treatments such as chromic acid treatment; and surface treatments such as easy adhesion treatment with a coating agent (primer) may be applied. Moreover, in order to provide antistatic ability, you may provide the conductive vapor deposition layer containing a metal, an alloy, these oxides, etc. on the base-material surface. It is preferable that the surface treatment for improving adhesiveness is given to the whole surface by the side of the adhesive layer in a base material.

  The thickness of the substrate is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably from the viewpoint of securing strength for the substrate to function as a support in the dicing tape and dicing tape-integrated back contact film. Is 55 μm or more, particularly preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape and the dicing tape-integrated back contact film, the thickness of the substrate is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less. is there.

  The arithmetic average surface roughness of the back surface of the substrate (the surface opposite to the side on which the pressure-sensitive adhesive layer is formed) is preferably 100 nm or less, more preferably 90 nm or less, and still more preferably 80 nm or less. When the arithmetic average surface roughness of the semiconductor back contact film surface is 100 nm or less, scattering of laser light to form a modified region is unlikely to occur, so a dicing tape may be used after the semiconductor wafer is attached to the back contact film. It is possible to efficiently form the modified region on the semiconductor wafer by the irradiation of the laser beam from the side. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Becomes easier.

(Pressure-sensitive adhesive layer)
The pressure-sensitive adhesive layer in the dicing tape is a pressure-sensitive adhesive layer (pressure-sensitive adhesive type pressure-sensitive adhesive layer) capable of intentionally reducing the adhesive force by the action from the outside in the use process of the dicing tape-integrated back contact film. It may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive non-reducing pressure-sensitive adhesive layer) in which the adhesion is hardly or not reduced depending on the external action in the use process of the dicing tape-integrated back contact film. It can select suitably according to the method, conditions, etc. of singulation of the work separated into pieces using dicing tape integrated back contact film. The pressure-sensitive adhesive layer may have a single-layer structure or a multi-layer structure.

  When the pressure-sensitive adhesive layer is a pressure-sensitive adhesive type pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer exhibits relatively high adhesion and relatively low adhesion in the manufacturing process and use process of the dicing tape-integrated back contact film. It becomes possible to use properly the state which shows power. For example, when attaching a back contact film to a pressure-sensitive adhesive layer of a dicing tape in the process of manufacturing a dicing tape-integrated back contact film, or when the dicing tape-integrated back contact film is used in the singulation step, While it becomes possible to suppress and prevent lifting of the back contact film from the pressure-sensitive adhesive layer by using a state in which relatively high adhesive strength is exhibited, after that, the semiconductor from the dicing tape integrated back contact film dicing tape In the pick-up process for picking up the chip, the pick-up can be easily performed by reducing the adhesive force of the pressure-sensitive adhesive layer.

  Examples of the pressure-sensitive adhesive that can form such a pressure-sensitive adhesive type pressure-sensitive adhesive layer include a radiation-curable pressure-sensitive adhesive and a heat-foaming type pressure-sensitive adhesive. As an adhesive which forms an adhesive force reduction type adhesive layer, 1 type of adhesive may be used and 2 or more types of adhesive may be used.

  As the radiation-curable pressure-sensitive adhesive, for example, a pressure-sensitive adhesive of a type which can be cured by irradiation of electron beam, ultraviolet light, α-ray, β-ray, γ-ray or X-ray can be used. A pressure sensitive adhesive (ultraviolet curable pressure sensitive adhesive) can be particularly preferably used.

  The radiation curable adhesive includes, for example, a base polymer such as an acrylic polymer, and a radiation polymerizable monomer component or oligomer component having a functional group such as a radiation polymerizable carbon-carbon double bond. Types of radiation curable adhesives.

  The said acryl-type polymer is a polymer containing the structural unit derived from an acryl-type monomer (The monomer component which has a (meth) acryloyl group in a molecule | numerator) as a structural unit of a polymer. It is preferable that the said acryl-type polymer is a polymer which contains the structural unit originating in a (meth) acrylic acid ester most by mass ratio. In addition, an acryl-type polymer may use only 1 type, and may use 2 or more types.

  As said (meth) acrylic acid ester, the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group is mentioned, for example. As a hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group, what was illustrated as a structural unit of the acrylic resin which the above-mentioned adhesive bond layer may contain is mentioned. The hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more. As a hydrocarbon group containing (meth) acrylic acid ester which may have the said alkoxy group, 2-ethylhexyl acrylic acid and lauryl acrylic acid are preferable. In order to properly express in the pressure-sensitive adhesive layer basic characteristics such as tackiness by the hydrocarbon group-containing (meth) acrylate which may have an alkoxy group, all monomer components for forming an acrylic polymer 40 mass% or more is preferable, and, as for the ratio of hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group in these, 60 mass% or more is more preferable.

  The above acrylic polymer is derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylic acid ester which may have the above alkoxy group for the purpose of modifying cohesion and heat resistance etc. May be included. As said other monomer component, the other monomer component illustrated as a structural unit of the acrylic resin which the above-mentioned adhesive bond layer may contain is mentioned. The other monomer components may be used alone or in combination of two or more. In order to properly express in the pressure-sensitive adhesive layer basic characteristics such as tackiness by the hydrocarbon group-containing (meth) acrylate which may have an alkoxy group, all monomer components for forming an acrylic polymer 60 mass% or less is preferable, and, as for the total ratio of the said other monomer component in ,, it is 40 mass% or less more preferably.

  The above-mentioned acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with a monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, penta Erythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (eg, polyglycidyl (meth) acrylate), polyester The monomer etc. which have a (meth) acryloyl group and other reactive functional groups in the molecule | numerator of (meth) acrylate, urethane (meth) acrylate, etc. are mentioned. The polyfunctional monomers may be used alone or in combination of two or more. In order to properly express in the pressure-sensitive adhesive layer basic characteristics such as tackiness by the hydrocarbon group-containing (meth) acrylate which may have an alkoxy group, all monomer components for forming an acrylic polymer 40 mass% or less is preferable, and, as for the ratio of the said polyfunctional monomer in these, 30 mass% or less is more preferable.

  An acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. The mass average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3,000,000. When the mass average molecular weight is 100,000 or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and the contamination of the back contact film, the semiconductor wafer and the like can be further suppressed.

  The pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer may contain a crosslinking agent. For example, when using an acrylic polymer as the base polymer, the acrylic polymer can be crosslinked to further reduce low molecular weight substances in the pressure-sensitive adhesive layer. In addition, the mass average molecular weight of the acrylic polymer can be increased. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When using a crosslinking agent, about 5 mass parts or less are preferable with respect to 100 mass parts of base polymers, More preferably, it is 0.1-5 mass parts.

  Examples of the radiation polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta ( Examples include meta) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type and polybutadiene type, and those having a molecular weight of about 100 to 30,000 are preferable. The content of the radiation polymerizable monomer component and the oligomer component in the radiation curable adhesive forming the adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer. It is about a mass part. In addition, as the addition type radiation curable adhesive, for example, those disclosed in JP-A-60-196956 may be used.

  The radiation-curable pressure-sensitive adhesive includes an internal radiation-curable resin containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond or the like in the polymer side chain or in the polymer main chain at the polymer main chain terminal. There is also a sex adhesive. Use of such an internal-type radiation-curable pressure-sensitive adhesive tends to be able to suppress unintended changes in adhesion properties caused by the movement of low molecular weight components in the formed pressure-sensitive adhesive layer.

  An acrylic polymer is preferable as the base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group was polymerized (copolymerized) to obtain an acrylic polymer. Thereafter, a compound having a second functional group capable of reacting with the first functional group and a radiation-polymerizable carbon-carbon double bond, while maintaining the radiation-polymerizable carbon-carbon double bond, is an acrylic polymer Methods for condensation reaction or addition reaction.

  Examples of combinations of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, An isocyanate group and a hydroxy group etc. are mentioned. Among these, the combination of a hydroxy group and an isocyanate group and the combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness of reaction tracking. Among them, it is technically difficult to produce a polymer having a highly reactive isocyanate group, while the first functional group is preferably from the viewpoint of the ease of preparation and availability of an acrylic polymer having a hydroxy group. The combination which is a hydroxyl group and whose said 2nd functional group is an isocyanate group is preferable. As a compound having an isocyanate group and a radioactively polymerizable carbon-carbon double bond, that is, a radiation polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α-dimethylbenzyl isocyanate and the like can be mentioned. Moreover, as an acrylic polymer having a hydroxy group, one comprising a constitutional unit derived from the above-mentioned hydroxy group-containing monomer, or an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether Can be mentioned.

  The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, Examples include camphor quinone, halogenated ketones, acyl phosphinoxides, and acyl phosphonates. Examples of the above α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2-methyl-2-hydroxy Propiophenone, 1-hydroxycyclohexyl phenyl ketone and the like can be mentioned. Examples of the above acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2 -Morpholinopropane-1 etc. are mentioned. Examples of the above-mentioned benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether and the like. Examples of the ketal compounds include benzyl dimethyl ketal and the like. As said aromatic sulfonyl chloride type compound, 2-naphthalene sulfonyl chloride etc. are mentioned, for example. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime and the like. Examples of the benzophenone compounds include benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone and the like. Examples of the thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl Thioxanthone etc. are mentioned. The content of the photopolymerization initiator in the radiation curable adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

  The heat-foaming type pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, azides and the like. Examples of the organic foaming agent include salt-fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide and barium azodicarboxylate; Hydrazine compounds such as sulfonylhydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), allylbis (sulfonylhydrazide) and the like; p-toluylenesulfonyl semicarbazide, 4,4'- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholine-1,2,3,4-thiatriazole; N, N'-dinitrosopentamethylenetetramine, N, N'-di Chill -N, N-nitroso compounds such as N'- dinitrosoterephthalamide, and the like. Examples of the thermally expandable microspheres include microspheres having a configuration in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the substance which is easily gasified and expanded by the above heating include isobutane, propane, pentane and the like. Thermally expandable microspheres can be produced by encapsulating a substance which is easily gasified and expanded by heating into a shell-forming substance by a coacervation method, an interfacial polymerization method or the like. As the above-mentioned shell-forming substance, a substance exhibiting heat melting property or a substance which can be ruptured by the action of thermal expansion of the encapsulating substance can be used. Examples of such a substance include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

  Examples of the non-adhesive force-reducing pressure-sensitive adhesive layer include a pressure-sensitive pressure-sensitive adhesive layer. In the pressure-sensitive pressure-sensitive adhesive layer, a pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive described above in relation to the pressure-sensitive adhesive type pressure-sensitive adhesive layer is cured in advance by radiation irradiation. An adhesive layer is included. As the pressure-sensitive adhesive forming the non-adhesive force-reducing type pressure-sensitive adhesive layer, one kind of pressure-sensitive adhesive may be used, or two or more kinds of pressure-sensitive adhesives may be used. Further, the whole of the pressure-sensitive adhesive layer may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or a part may be an adhesive force non-reducing type pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer has a single-layer structure, the entire pressure-sensitive adhesive layer may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or a specific portion in the pressure-sensitive adhesive layer (for example, a ring frame In the region, the region outside the central region is a non-adhesive force reducing type pressure-sensitive adhesive layer, and the other part (for example, the central region which is the application target region of the semiconductor wafer) is an adhesive force-reducible adhesive It may be an agent layer. In addition, when the pressure-sensitive adhesive layer has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or some of the pressure-sensitive adhesive layers in the laminated structure have non-adhesiveness. It may be a reduced pressure-sensitive adhesive layer.

  A pressure-sensitive adhesive layer (irradiated radiation-curable pressure-sensitive adhesive layer) in a form in which a pressure-sensitive adhesive layer (a non-irradiated radiation-curable pressure-sensitive adhesive layer) formed of a radiation-curable pressure-sensitive adhesive is previously cured by radiation Even if the adhesive force is reduced by irradiation, the adhesive property due to the contained polymer component is exhibited, and it is possible to exhibit the minimum adhesive force required for the adhesive layer of the dicing tape in the singulation step etc. is there. When the radiation-cured radiation-curable pressure-sensitive adhesive layer is used, the entire pressure-sensitive adhesive layer may be a radiation-cured radiation-curable pressure-sensitive adhesive layer in the surface spreading direction of the pressure-sensitive adhesive layer. It may be a radiation-cured radiation-curable pressure-sensitive adhesive layer and the other part may be a radiation non-radiation-cured radiation-curable pressure-sensitive adhesive layer. In the present specification, the "radiation-curable pressure-sensitive adhesive layer" refers to a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, and a radiation-curable non-radiation-curable radiation-curable pressure-sensitive adhesive layer and the adhesive The agent layer includes both of the radiation-curable radiation-curable pressure-sensitive adhesive layer after being cured by irradiation.

  As a pressure-sensitive adhesive for forming the pressure-sensitive pressure-sensitive adhesive layer, known pressure-sensitive pressure-sensitive adhesives can be used, and acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives containing an acrylic polymer as a base polymer are preferably used. Can. When the pressure-sensitive adhesive layer contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is a polymer containing a constituent unit derived from (meth) acrylic acid ester as the largest constituent unit in mass ratio preferable. As the acrylic polymer, for example, an acrylic polymer described as an acrylic polymer that can be included in the above-described addition type radiation curable adhesive can be employed.

  The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer or the pressure-sensitive adhesive layer may be any known or commonly used pressure-sensitive adhesive layer such as a crosslinking accelerator, tackifier, antiaging agent, coloring agent (pigment, dye, etc.) in addition to the above components. The additive used for (1) may be mix | blended. As said coloring agent, the compound colored by irradiation with radiation is mentioned, for example. When it contains a compound that is colored by irradiation, only the irradiated part can be colored. The compound to be colored by the irradiation with radiation is a compound which is colorless or pale before irradiation with radiation but turns to a color by irradiation with radiation, and examples thereof include leuco dyes and the like. The amount of the compound to be colored by the above radiation irradiation is not particularly limited and can be appropriately selected.

  The thickness of the pressure-sensitive adhesive layer is not particularly limited, but when the pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, adhesion of the pressure-sensitive adhesive layer to the back contact film before and after radiation curing From the viewpoint of balance, the thickness is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm.

  The dicing tape-integrated back contact film (excluding the separator if it has a separator) of the present invention preferably has a linear transmittance of 20% or more, more preferably 35% or more, and still more preferably, infrared rays with a wavelength of 1000 nm. 50% or more. When the linear transmittance is 20% or more, the dicing tape-integrated back contact film has high transmittance of laser light near a wavelength of 1000 nm to be irradiated to form a modified region, and therefore, it is attached to the back contact film Later, it is possible to form a modified region on the semiconductor wafer by irradiating a laser beam from the dicing tape side. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Becomes easier.

  The dicing tape-integrated back contact film (excluding the separator when it has a separator) of the present invention preferably has a linear transmittance (linear transmittance D) of infrared rays with a wavelength of 1342 nm, more preferably 40 % Or more, more preferably 50% or more. When the linear transmittance D is 20% or more, the dicing tape-integrated back contact film has high transmittance to a laser beam with a wavelength of 1342 nm to be irradiated to form a modified region, and therefore, it is attached to the back contact film Later, it is possible to form a modified region on the semiconductor wafer more efficiently by irradiating the laser beam from the dicing tape side. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Becomes easier.

  In the dicing tape-integrated back contact film (excluding the separator when it has a separator) of the present invention, the total light transmittance of infrared light with a wavelength of 1342 nm (total light transmittance C) is preferably 60% or more, more preferably Is 70% or more, more preferably 80% or more. The total light transmittance C can be measured using a known spectrophotometer.

  The dicing tape-integrated back contact film (excluding the separator when it has a separator) of the present invention is the ratio of the total light transmittance C of the infrared light of wavelength 1342 nm to the linear transmittance D [total light transmittance C (%) / Linear transmittance D (%)] is preferably 1.0 to 5.0, more preferably 1.0 to 3.5, and still more preferably 1.0 to 2.0. When the above ratio is within the above range, the dicing tape-integrated back contact film tends to selectively transmit the laser beam to be formed to form the modified region, so after sticking to the back contact film It becomes easier to form a modified region on a semiconductor wafer by irradiating a laser beam from the dicing tape side. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Becomes easier. The total light transmittance C can be measured using a known spectrophotometer.

  The dicing tape-integrated back contact film (excluding the separator when it has a separator) of the present invention preferably has a haze value of 80% or less, more preferably 73% or less, and still more preferably 50% or less. When the haze value is 80% or less, the dicing tape-integrated back contact film is less likely to cause scattering of the laser light irradiated to form the modified region, and therefore, the dicing tape side is attached to the back contact film. It becomes possible to efficiently form the modified region on the semiconductor wafer by the irradiation of the laser beam from the above. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Becomes easier. The haze value can be measured according to JIS K7361-1 (1997).

  In the dicing tape-integrated back contact film of the present invention, the arithmetic mean surface roughness of both the back surface of the base and the back contact film is preferably 100 nm or less, more preferably 80 nm or less, still more preferably 60 nm or less. is there. When the above-mentioned arithmetic average surface roughness is 100 nm or less, the dicing tape-integrated semiconductor back contact film hardly scatters the laser light irradiated to form the modified region, so after sticking to the back contact film, It becomes possible to efficiently form the modified region on the semiconductor wafer by the irradiation of the laser beam from the dicing tape side. For this reason, it becomes unnecessary to form a modified region on the semiconductor wafer before sticking to the back contact film, and the semiconductor wafer is singulated without causing chipping of the semiconductor chip at the time of sticking and peeling from the back contact film. Becomes easier.

  In the dicing tape-integrated back contact film of the present invention, the arithmetic average surface roughness of the substrate surface (the surface on which the pressure-sensitive adhesive layer is formed in FIGS. 1 and 2) is not particularly limited. It may be In this case, the above-mentioned pressure-sensitive adhesive layer is preferably filled in the concave portion of the surface of the base material. When the adhesive layer is filled in the depressions on the surface of the substrate, irregular reflection of laser light by the depressions can be suppressed, and irradiation of the laser light from the dicing tape side makes the modified region more efficient on the semiconductor wafer. It becomes possible to form. An embossed surface etc. are mentioned as a surface whose said arithmetic mean surface roughness is 100 nm or more.

The thickness of the dicing tape-integrated back contact film (excluding the separator if it has a separator) of the present invention is, for example, 70 to 200 μm, preferably 80 to 170 μm, and more preferably 90 to 150 μm.

  The dicing tape-integrated back contact film of the present invention may have a separator on the back contact film surface. Specifically, each dicing tape-integrated back contact film may be in the form of a sheet having a separator, or the separator may be elongated and a plurality of dicing tape integrated back-contact films may be formed thereon. It may be arranged, and the separator may be wound into a roll. The separator is an element for covering and protecting the back contact film surface, and is separated from the sheet when using the dicing tape-integrated back contact film of the present invention. Examples of the separator include plastic films and papers surface-coated with a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a release agent such as a fluorine-based release agent or a long chain alkyl acrylate release agent.

  The thickness of the separator is, for example, 10 to 200 μm, preferably 15 to 150 μm, and more preferably 20 to 100 μm. When the thickness is 10 μm or more, it is difficult to be broken due to cutting at the time of processing of the separator. When the thickness is 200 μm or less, the dicing tape-integrated back contact film is more easily peeled off from the separator at the time of bonding to the substrate and the frame.

[Manufacturing method of dicing tape integrated type back contact film]
The dicing tape integrated back contact film 1 which is one embodiment of the dicing tape integrated back adhesion film of the present invention is manufactured, for example, as follows.

  The dicing tape 10 of the dicing tape-integrated back contact film 1 shown in FIGS. 1 and 2 can be produced by providing the pressure-sensitive adhesive layer 12 on the prepared substrate 11. For example, the base material 11 made of resin can be obtained by film formation by a known or conventional film formation method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, a dry lamination method and the like. The substrate 11 is subjected to surface treatment as required. In the formation of the pressure-sensitive adhesive layer 12, for example, after preparing a pressure-sensitive adhesive composition (pressure-sensitive adhesive) for forming a pressure-sensitive adhesive layer, first, the composition is applied onto the substrate 11 or a separator to form a pressure-sensitive adhesive composition Form an object layer. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in the pressure-sensitive adhesive composition layer, the solvent is removed as necessary by heating, and a crosslinking reaction is caused as necessary. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 is formed on a separator, the pressure-sensitive adhesive layer 12 with the separator is attached to the substrate 11. Thereby, the dicing tape 10 which has a laminated structure of the base material 11 and the adhesive layer 12 is produced.

  First, a composition (adhesive composition) for forming the adhesive layer 21 including a resin, a filler, a curing catalyst, a solvent and the like is prepared for the adhesive layer 21. Next, the adhesive composition is applied onto the separator to form a coating film, and the coating film is solidified by solvent removal, curing or the like as necessary to form the adhesive layer 21. The coating method is not particularly limited, and examples thereof include known or commonly used coating methods such as roll coating, screen coating, and gravure coating. Moreover, as desolvation conditions, for example, the temperature is 70 to 160 ° C., and the time is for 1 to 5 minutes.

  As shown in FIG. 2, when the back contact film 20 has a laminated structure including the adhesive layer 21 and the laser mark layer 22, the adhesive layer 21 and the laser mark layer 22 are separately manufactured. The adhesive layer 21 can be produced in the same manner as the method described above. On the other hand, the laser mark layer 22 is coated with a resin composition for forming the laser mark layer 22 on a separator to form a resin composition layer, and then desolvation or curing is performed by heating to solidify the resin composition layer. It can be produced by In the production of the laser mark layer 22, the heating temperature is, for example, 90 to 160 ° C., and the heating time is, for example, 2 to 4 minutes. As described above, the adhesive layer 21 and the laser mark layer 22 can be produced in a form in which each of them is accompanied by a separator. Then, the exposed surfaces of the adhesive layer 21 and the laser mark layer 22 are attached to each other, and a back contact film 20 having a laminated structure of the adhesive layer 21 and the laser mark layer 22 is produced.

Next, the back contact film 20 (laser mark layer 22 in the case of having the laser mark layer 22) obtained above is attached to the adhesive layer 12 side of the dicing tape 10. The bonding temperature is, for example, 30 to 50 ° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm. When the pressure-sensitive adhesive layer 12 is the above-described radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet light before the bonding. The adhesive layer 12 may be irradiated with radiation such as ultraviolet light from the side. Alternatively, such radiation may not be performed in the manufacturing process of the dicing tape-integrated back contact film 1 (in this case, the adhesive layer 12 is cured in the process of using the dicing tape-integrated back contact film 1 Is possible). When the pressure-sensitive adhesive layer 12 is of an ultraviolet-curable type, the ultraviolet irradiation dose for curing the pressure-sensitive adhesive layer 12 is, for example, 50 to 500 mJ / cm ² . The region (irradiated region R) where the irradiation as the adhesive force reduction measure of the pressure-sensitive adhesive layer 12 is performed in the dicing tape-integrated back contact film 1 is, for example, as shown in FIGS. 20 is an area excluding the peripheral portion in the bonding area.

  As described above, for example, the dicing tape-integrated back contact film 1 shown in FIGS. 1 and 2 can be manufactured.

[Method of Manufacturing Semiconductor Device]
A semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention. Specifically, the step of bonding the back surface of the semiconductor wafer to the back contact film side (particularly the adhesive layer side) of the dicing tape-integrated back contact film of the present invention (sticking step), and division of the semiconductor wafer by laser light irradiation A step of forming a modified region along a line (laser beam irradiation step) and expanding the dicing tape in the dicing tape-integrated back contact film of the present invention under relatively low temperature conditions to obtain a semiconductor wafer and a back surface A manufacturing method including a step of obtaining a back contact film-attached semiconductor chip by cleaving the contact film along the planned dividing line (separating step), and a step of picking up the back contact film-attached semiconductor chip (pickup step) Thus, a semiconductor device can be manufactured. 3 to 7 show steps in a method of manufacturing a semiconductor device using the dicing tape-integrated back contact film 1 shown in FIG. 2, but the dicing tape-integrated back contact film 1 of the present invention shown in FIG. Alternatively, the dicing tape integrated back contact film 1 shown in FIG. 1 may be used.

  The method for manufacturing the semiconductor device may have a step of thinning the semiconductor wafer (wafer thinning step) before the attaching step. In the wafer thinning step, as shown in FIGS. 3A and 3B, the semiconductor wafer W has a predetermined thickness while the semiconductor wafer W is held by the wafer processing tape (surface protective film) T1. The thickness is reduced by grinding from the back surface Wa. Grinding can be performed using a grinding apparatus equipped with a grinding wheel.

(Pasting process)
In the sticking step, for example, as shown in FIG. 4A, the dicing tape-integrated back contact film 1 is held in a state where the semiconductor wafer 30 ground in the wafer thinning step is held by the wafer processing tape T1. It sticks on the back contact film 20 side in (in particular the adhesive layer 21 side). Bumps (not shown) for flip chip mounting are provided on the surface of the semiconductor wafer 30. By using the dicing tape-integrated back contact film of the present invention, it is possible to form a modified region later, and there is no need to form a modified region on the semiconductor wafer 30 at this stage. The semiconductor chip does not bite into the wafer processing tape T1 due to the pressure applied at 30. Then, as shown in FIG. 4B, the wafer processing tape T1 is peeled off from the semiconductor wafer 30. By using the dicing tape-integrated back contact film of the present invention, there is no need to form a modified region on the semiconductor wafer 30, and thereby the semiconductor chip whose outer peripheral portion is cut when peeling the wafer processing tape T1. Does not peel off with the wafer processing tape T1.

(Thermal curing process)
When a back contact film has a thermosetting adhesive layer, it is preferable to have a step (heat curing step) of heat curing the adhesive layer in the back contact film after the attaching step. For example, in the heat curing step, heat treatment for heat curing the adhesive layer 21 is performed. The heating temperature is preferably 80 to 200 ° C, more preferably 100 to 150 ° C. The heating time is preferably 0.5 to 5 hours, more preferably 1 to 3 hours. Specifically, the heat treatment is performed, for example, at 120 ° C. for 2 hours. In the heat curing step, the adhesion between the back contact film 20 of the dicing tape integrated back contact film 1 and the semiconductor wafer 30 is enhanced by the heat curing of the adhesive layer 21, and the dicing tape integrated back contact film 1 and its back contact The holding power of the film 20 to the wafer is increased. In addition, when the back contact film does not have a thermosetting adhesive layer, baking may be performed, for example, in the range of 50 to 100 ° C. for several hours, whereby the wettability of the adhesive layer interface is improved. The wafer holding power is increased.

(Laser marking process)
In the case where the back contact film has a laser mark layer, the method for manufacturing a semiconductor device has a step (laser marking step) of irradiating the laser mark layer from the substrate side of the dicing tape with a laser to perform laser marking. Is preferred. The laser marking process is preferably performed after the heat curing process. Specifically, in the laser marking process, for example, laser marking is performed by irradiating a laser from the side of the base material 11 of the dicing tape 10 to the laser mark layer 22. By the laser marking process, various information such as character information and graphic information can be imprinted on each semiconductor chip. In the laser marking process, it is possible to perform laser marking efficiently on a plurality of semiconductor chips collectively in one laser marking process. As a laser used at a laser marking process, a gas laser and a solid state laser are mentioned, for example. Examples of the gas laser include a carbon dioxide gas laser (CO ₂ laser) and an excimer laser. As a solid state laser, Nd: YAG laser is mentioned, for example. The laser marking process may be performed for each semiconductor chip after the individualization process described later, after the pickup process, or the like.

  The dicing tape integrated back contact at an appropriate stage, such as before the sticking step, between the sticking step and the heat curing step, between the heat curing step and the laser marking step, after the laser marking step, etc. After sticking the ring frame 41 on the adhesive layer 12 of the dicing tape 10 in the film 1, the dicing tape integrated back contact film 1 with the semiconductor wafer 30 is fixed to the holder 42 of the expanding device.

(Laser beam irradiation process)
In the laser beam irradiation step, for example, as shown in FIG. 5A, the laser beam whose focusing point is adjusted to the inside of the semiconductor wafer 30 is from the dicing tape 10 side of the dicing tape integrated back contact film 1 to the semiconductor wafer 30. Then, the modified region 30a is formed in the semiconductor wafer 30 due to the ablation by the multiphoton absorption. The modified region 30a is a weakened region for separating the semiconductor wafer 30 into semiconductor chip units. The method of forming the modified region 30a on the planned dividing line by laser beam irradiation in the semiconductor wafer 30 is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. For example, it adjusts suitably within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser pumped Nd: YAG laser Wavelength 1064 nm, 1088 nm, 1099 nm or 1342 nm
Laser beam spot cross section 3.14 × 10 ^-8 cm ²
Oscillation mode Q switch pulse Repetition frequency 100kHz or less Pulse width 1μs or less Output 1mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized (B) focusing lens Magnification: up to 100 times NA 0.55
Transmittance 100% or less for laser light wavelength (C) Movement speed of the processing table on which the semiconductor substrate is mounted 280 mm / s or less

(Dividing process)
In the above-described singulation step, for example, the expand step (cool expand step) under relatively low temperature conditions is performed as shown in FIG. 5B, and the semiconductor wafer 30 is singulated into a plurality of semiconductor chips 31. The back contact film 20 of the dicing tape-integrated back contact film 1 is cut into pieces of the back contact film 20 'of a small piece to obtain a semiconductor chip 31 with back contact film. Specifically, in the cool expanding step, a crack is formed in the fragile modified region 30 a of the semiconductor wafer 30, and singulation to the semiconductor chip 31 occurs. At the same time, in the cool expanding step, in the back contact film 20 in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region where the semiconductor chips 31 of the semiconductor wafer 30 are in contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the crack formation portion of the wafer which is located in the vertical direction in the drawing without such a deformation suppressing action. As a result, in the back contact film 20, a portion located in the vertical direction in the figure of the crack formation portion between the semiconductor chips 31 is cut.

  In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought up in contact with the dicing tape 10 at the lower side of the dicing tape-integrated back contact film 1 in the figure, and the semiconductor wafer 30 is bonded. The dicing tape 10 of the dicing tape-integrated back contact film 1 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30. This expanding is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa occurs in the dicing tape 10. The temperature conditions in the cool expanding step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed to raise the push-up member 43) in the cool expanding step is preferably 0.1 to 300 mm / sec. Further, the amount of expansion in the cool expanding step is preferably 3 to 25 mm.

  After the cutting by the expansion, as shown in FIG. 5C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. Thereafter, an expanding step may be performed to increase the separation distance between the back contact film-attached semiconductor chips 31. For example, in a state where the push-up member 43 is lifted again, the semiconductor chip 31 is vacuum-sucked from the dicing tape 10 side and fixed to a table, and the expanded state is released to heat the push-up region of the dicing tape 10 to shrink (heat shrink). By doing this, the distance between the expanded semiconductor chips 31 can be maintained. The expand amount (push amount) at the time of raising the push-up member 43 is, for example, 3 to 25 mm, and the expand speed (speed of raising the push-up member 43) is, for example, 0.1 to 300 mm / sec. The distance between the heater and the push-up area during heat contraction is, for example, 5 to 100 mm, and the rotation speed of the dicing tape is, for example, 1 to 10 ° / second.

(Irradiation process)
The method for manufacturing a semiconductor device may have a step of irradiating the pressure-sensitive adhesive layer from the substrate side with radiation (radiation irradiation step). When the pressure-sensitive adhesive layer of the dicing tape is a layer formed of a radiation-curable pressure-sensitive adhesive, instead of the above-described radiation irradiation in the manufacturing process of the dicing tape-integrated back contact film, Later, radiation such as ultraviolet light may be applied to the pressure-sensitive adhesive layer from the side of the substrate. The irradiation dose is, for example, 50 to 500 mJ / cm ² . The area (irradiated area R shown in FIGS. 1 and 2) where the irradiation as the adhesive force reduction measure of the pressure-sensitive adhesive layer is performed in the dicing tape-integrated back-adhesion film is, for example, within the back-adhesion film bonding area in the pressure-sensitive adhesive layer. It is an area excluding the peripheral portion.

(Pickup process)
The pick-up step may be performed after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with back contact film 31 using a cleaning liquid such as water, if necessary. For example, as shown in FIG. 6, the semiconductor chip 31 with back contact film is picked up from the dicing tape 10. For example, with the dicing tape 10 with the ring frame 41 held by the holder 42 of the apparatus, the pin member 51 of the pickup mechanism on the lower side of the dicing tape 10 in the figure of the semiconductor chip 31 with back contact film to be picked up. Is raised and pushed up through the dicing tape 10, and then held by suction by the suction jig 52. In the pickup step, the push-up speed of the pin member 51 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 51 is, for example, 50 to 3000 μm.

(Flip chip mounting process)
It is preferable that the method for manufacturing the semiconductor device has a step (flip chip process) of flip chip mounting of the back contact film-attached semiconductor chip 31 after the pickup process. For example, as shown in FIG. 7, the semiconductor chip 31 with the back contact film is flip-chip mounted on the mounting substrate 61. Examples of the mounting substrate 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring substrate. The semiconductor chip 31 is electrically connected to the mounting substrate 61 via the bumps 62 by flip chip mounting. Specifically, a substrate (electrode pad) (not shown) that the semiconductor chip 31 has on the circuit formation side and a terminal portion (not shown) that the mounting substrate 61 has are electrically connected via the bumps 62. Ru. The bumps 62 are, for example, solder bumps. Further, a thermosetting underfill agent 63 is interposed between the semiconductor chip 31 and the mounting substrate 61.

  As described above, a semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention.

  EXAMPLES The present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.

Example 1
<Preparation of dicing tape>
In a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate, and an excess as a polymerization initiator A mixture containing 0.4 parts by mass of benzoyl oxide and 80 parts by mass of toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). This gave a polymer solution containing an acrylic polymer P _1. Next, a polymer solution containing the acrylic polymer P _1, 2-methacryloyloxyethyl isocyanate (MOI) and mixture containing, 60 hours at 50 ° C., was stirred under an air atmosphere (addition reaction). In the reaction solution, the amount of the MOI is 12 parts by weight with respect to the acrylic polymer P ₁ 100 parts by weight. This addition reaction, to obtain a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in the side chain. Next, to the polymer solution, 0.75 parts by mass of polyisocyanate compound (trade name "Corronate L", manufactured by Tosoh Corp.) and 2 parts by mass of photopolymerization start with respect to 100 parts by mass of acrylic polymer P ₂ An agent (trade name "IRGACURE 651", manufactured by BASF AG) and toluene were added and mixed to obtain a pressure-sensitive adhesive composition having a solid content concentration of 28% by mass. Next, an adhesive composition was applied using a applicator on a silicone release-treated surface of a PET separator (thickness 50 μm) having a silicone release-treated surface to form an adhesive composition layer. . Next, the composition layer was subjected to desolvation by heating at 120 ° C. for 2 minutes to form a 30 μm-thick pressure-sensitive adhesive layer on the PET separator. Next, using a laminator, a polypropylene film (trade name “SC040PP1-BL”, 40 μm thick, manufactured by Kurashiki Spinning Co., Ltd.) as a substrate is formed on the exposed surface of the pressure-sensitive adhesive layer, and the embossed surface of the substrate Were bonded at room temperature so that the adhesive layer was in contact with the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer filled the recesses on the embossed surface. Thereafter, the laminate was stored at 23 ° C. for 72 hours. The dicing tape of Example 1 was produced as described above.

<Production of back contact film>
100 parts by mass of acrylic resin A ₁ (trade name "Teisan resin SG-P3", manufactured by Nagase ChemteX Co., Ltd.) and 9 parts by mass of epoxy resin E ₁ (trade name "EPPN-501HY" manufactured by Nippon Kayaku Co., Ltd.) 12 parts by mass of Phenolic resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, Admatex Co., Ltd. Made by adding 69 parts by mass and 7 parts by mass of a colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries, Ltd.) to methyl ethyl ketone and mixing, a resin composition having a solid content concentration of 28% by mass I got Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and a 25 μm thick back contact film of Example 1 was produced on the PET separator.

<Production of dicing tape integrated back contact film>
A pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and a surface exposed in the back contact film of Example 1 are laminated using a hand roller to form a laminate including the dicing tape and the back contact film. A dicing tape-integrated back contact film having a structure was produced.

Example 2
<Production of back contact film>
100 parts by mass of acrylic resin A ₁ (trade name "Teisan resin SG-P3", manufactured by Nagase ChemteX Co., Ltd.) and 9 parts by mass of epoxy resin E ₁ (trade name "EPPN-501HY" manufactured by Nippon Kayaku Co., Ltd.) 12 parts by mass of Phenolic resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, Admatex Co., Ltd. Made by adding 69 parts by mass and 4 parts by mass of a colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries, Ltd.) to methyl ethyl ketone and mixing, a resin composition having a solid content concentration of 28% by mass I got Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was subjected to heating for 2 minutes at 130 ° C. to desolvate, and a back contact film of Example 2 with a thickness of 25 μm was produced on the PET separator.

<Production of dicing tape integrated back contact film>
A pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and a surface exposed in the back contact film of Example 2 are laminated using a hand roller to form a laminate including the dicing tape and the back contact film. A dicing tape-integrated back contact film having a structure was produced.

Example 3
<Production of back contact film>
100 parts by mass of acrylic resin A ₁ (trade name "Teisan resin SG-P3", manufactured by Nagase ChemteX Co., Ltd.) and 9 parts by mass of epoxy resin E ₁ (trade name "EPPN-501HY" manufactured by Nippon Kayaku Co., Ltd.) 12 parts by mass of phenol resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.) and filler F ₂ (trade name “YA050C-MJI”, average particle diameter: 0.05 μm, Admatex Co., Ltd. Made by adding 69 parts by mass and 4 parts by mass of a colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries, Ltd.) to methyl ethyl ketone and mixing, a resin composition having a solid content concentration of 28% by mass I got Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was subjected to heating for 2 minutes at 130 ° C. to desolvate, and a back contact film of Example 3 with a thickness of 25 μm was produced on the PET separator.

<Production of dicing tape integrated back contact film>
A pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and a surface exposed in the back contact film of Example 3 are laminated using a hand roller to form a laminate including the dicing tape and the back contact film. A dicing tape-integrated back contact film having a structure was produced.

Example 4
<Production of back contact film>
(Preparation of adhesive layer)
100 parts by mass of acrylic resin A ₂ (trade name "Teisan resin SG-708-6", manufactured by Nagase ChemteX Co., Ltd.) and 19 mass of epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Toto Kasei Co., Ltd.) Parts, 78 parts by mass of epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.), and 89 parts by mass of phenol resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) Parts and filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, manufactured by Admatex Co., Ltd.) and 190 parts by mass are added to methyl ethyl ketone and mixed, and a resin having a solid content concentration of 28 mass% The composition was obtained. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was subjected to heating for 2 minutes at 130 ° C. to desolvate, and an adhesive layer having a thickness of 8 μm was produced on the PET separator.

(Preparation of laser mark layer)
100 parts by mass of acrylic resin A ₁ (trade name "Teisan resin SG-P3", manufactured by Nagase ChemteX Co., Ltd.) and 44 mass of epoxy resin E ₃ (trade name "KI-3000-4" manufactured by Toto Kasei Co., Ltd.) Parts, 29 parts by mass of epoxy resin E ₄ (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), and 77 parts by mass of phenol resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) Filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, manufactured by Admatex Co., Ltd.) 175 parts by mass, and colorant D ₁ (trade name “OIL BLACK BS”, manufactured by Orient Chemical Industries, Ltd. ) and 13 parts by weight, thermal curing catalyst Z ₁ (trade name "TPP", and Hokko Chemical Industry Co., Ltd.) 21 parts by weight, was added and mixed in methyl ethyl ketone, solids concentration 28 To obtain an amount percent of the resin composition. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to desolvate and thermally cure, and a 17 μm-thick laser mark layer (thermally cured layer) was produced on the PET separator.

  The laser mark layer on the PET separator produced as described above and the adhesive layer on the PET separator were bonded together using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. The back contact film of Example 4 was produced as mentioned above.

<Production of dicing tape integrated back contact film>
The PET separator on the laser mark layer side is peeled off from the back contact film of Example 4 and the adhesive layer exposed in the dicing tape of Example 1 and the surface of the back contact film exposed by peeling of the PET separator are It stuck using the hand roller. As described above, a dicing tape-integrated back contact film having a laminated structure including a dicing tape and a back contact film was produced.

Example 5
<Production of back contact film>
(Preparation of adhesive layer)
100 parts by mass of acrylic resin A ₁ (trade name "Teisan resin SG-P3", manufactured by Nagase ChemteX Co., Ltd.), and 19 parts by mass of epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Toto Kasei Co., Ltd.) 52 parts by mass of epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) and 22 parts by mass of epoxy resin E ₄ (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Co., Ltd.) 76 parts by mass of phenol resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, manufactured by Admatex Co., Ltd.) and 177 parts by weight, the coloring agent D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries, Ltd.) and 15 parts by weight, thermal curing catalyst Z ₂ (trade name "2PHZ-PW" And Shikoku Chemicals Co., Ltd.) 5 parts by weight, and mixed with methyl ethyl ketone to obtain a solids concentration of 28% by weight of the resin composition. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and an adhesive layer (thermosetting layer) having a thickness of 8 μm was produced on the PET separator.

(Preparation of laser mark layer)
Acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase Chemtex Co., Ltd.) and 100 parts by weight of epoxy resin E ₁ (trade name "EPPN-501HY", manufactured by Nippon Kayaku Co., Ltd.) 66 parts by weight And 52 parts by mass of epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) and 22 parts by mass of epoxy resin E ₄ (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation) , 84 parts by mass of phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Kasei Co., Ltd.), and filler F ₁ (trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatex Co., Ltd. ) and 177 parts by weight, the coloring agent D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries, Ltd.) and 15 parts by weight, thermal curing catalyst Z ₁ (trade name "TPP", Hokko of And Industry Co., Ltd.) 24 parts by weight, and mixed with methyl ethyl ketone to obtain a solids concentration of 28% by weight of the resin composition. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was subjected to heating for 2 minutes at 130 ° C. to desolvate, and a 17 μm-thick laser mark layer was produced on the PET separator.

  The laser mark layer on the PET separator produced as described above and the adhesive layer on the PET separator were bonded together using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. The back contact film of Example 5 was produced as mentioned above.

<Production of dicing tape integrated back contact film>
The pressure-sensitive adhesive layer exposed on the dicing tape of Example 1 after peeling off the PET separator on the laser mark layer side from the back-adhesion film of Example 5 above, and the surface exposed by peeling of the PET separator on the back-adhesion film are It stuck using the hand roller. As described above, a dicing tape-integrated back contact film having a laminated structure including a dicing tape and a back contact film was produced.

Example 6
<Production of back contact film>
(Preparation of laser mark layer)
100 parts by mass of acrylic resin A ₂ (trade name "Teisan resin SG-708-6, manufactured by Nagase ChemteX Co., Ltd.) and acrylic resin A ₃ (trade name" Teisan resin SG-N50 ", manufactured by Nagase ChemteX Co., Ltd. 25 parts by mass, epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) and 64 parts by mass, epoxy resin E ₄ (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Co., Ltd.) 28 parts by mass, phenol resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) 96 parts by mass, filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, stock Company Admatex Co., Ltd.) 219 parts by mass, coloring agent D ₁ (trade name “OIL BLACK BS”, made by Orient Chemical Industries Co., Ltd.) 16 parts by mass, thermosetting catalyst Z ₁ ( 27 parts by mass of a trade name "TPP" (manufactured by Hokuko Chemical Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to desolvate and thermally cure, and a 17 μm-thick laser mark layer (thermally cured layer) was produced on the PET separator.

  The laser mark layer on the PET separator prepared as described above and the adhesive layer on the PET separator prepared in Example 4 were bonded using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, a back contact film of Example 6 was produced.

<Production of dicing tape integrated back contact film>
The pressure-sensitive adhesive layer exposed on the dicing tape of Example 1 after peeling off the PET separator on the laser mark layer side from the back-adhesion film of Example 6 above, and the surface exposed by peeling of the PET separator on the back-adhesion film are It stuck using the hand roller. As described above, a dicing tape-integrated back contact film having a laminated structure including a dicing tape and a back contact film was produced.

Comparative Example 1
<Production of back contact film>
100 parts by mass of acrylic resin A ₁ (trade name "Teisan resin SG-P3", manufactured by Nagase ChemteX Co., Ltd.) and 9 parts by mass of epoxy resin E ₁ (trade name "EPPN-501HY" manufactured by Nippon Kayaku Co., Ltd.) 12 parts by mass of Phenolic resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, Admatex Co., Ltd. 69 parts by mass, 7 parts by mass of a colorant D ₁ (trade name “OIL BLACK BS”, manufactured by Orient Chemical Industries, Ltd.), and 17 parts by mass of a heavy metal oxide colorant D ₂ (average particle diameter 0.02 μm) Parts were added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and a 25 μm thick back contact film of Comparative Example 1 was produced on the PET separator.

<Production of dicing tape integrated back contact film>
A pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and a surface exposed in the back contact film of Comparative Example 1 are laminated using a hand roller to form a laminate including the dicing tape and the back contact film. A dicing tape-integrated back contact film having a structure was produced.

Comparative example 2
<Preparation of dicing tape>
Using a laminator, a polypropylene film (trade name "SC040PP1-BL", thickness 40 μm, manufactured by Kurashiki Spinning Co., Ltd.) as a substrate on the exposed surface of the pressure-sensitive adhesive layer prepared in Example 1 It bonded together at room temperature so that a finish side might contact an adhesive layer. Thereafter, the laminate was stored at 23 ° C. for 72 hours. The dicing tape of Comparative Example 2 was produced as described above.

<Production of dicing tape integrated back contact film>
A pressure-sensitive adhesive layer exposed in the dicing tape of Comparative Example 2 and a surface exposed in the back surface contact film of Comparative Example 1 are laminated using a hand roller to form a laminate including the dicing tape and the back surface adhesion film. A dicing tape-integrated back contact film having a structure was produced.

Comparative example 3
<Production of back contact film>
(Preparation of adhesive layer)
100 parts by mass of acrylic resin A ₂ (trade name "Teisan resin SG-708-6", manufactured by Nagase ChemteX Co., Ltd.) and 19 mass of epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Toto Kasei Co., Ltd.) Parts, 78 parts by mass of epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.), and 89 parts by mass of phenol resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) Part, filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, made by Admatex Co., Ltd.) 190 parts by mass, heavy metal oxide colorant D ₂ (average particle diameter 0.02 μm) 17 parts by mass was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was subjected to heating for 2 minutes at 130 ° C. to desolvate, and an adhesive layer having a thickness of 8 μm was produced on the PET separator.

  The laser mark layer on the PET separator prepared in Example 4 and the adhesive layer on the PET separator prepared as described above were bonded using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, a back contact film of Comparative Example 3 was produced.

<Production of dicing tape integrated back contact film>
The pressure-sensitive adhesive layer exposed on the dicing tape of Example 1 after peeling off the PET separator on the laser mark layer side from the back contact film of Comparative Example 3 above, and the surface exposed by peeling of the PET separator on the back contact film It stuck using the hand roller. As described above, a dicing tape-integrated back contact film having a laminated structure including a dicing tape and a back contact film was produced.

<Evaluation>
The following evaluation was performed about the back contact film and dicing tape integrated back contact film which were obtained by the Example and the comparative example. The results are shown in Tables 1 and 2.

(1) Transmittance The back contact film and dicing tape integrated back contact film obtained in Examples and Comparative Examples are respectively measured using a spectrophotometer (trade name "V-670", manufactured by JASCO Corporation) Transmittance measurement in the wavelength range of 1000 to 1342 nm was performed. In addition, the case where it measured on the conditions without integrating spheres was made into linear transmittance, and the case where it measured on the conditions with integrating spheres was made into the total light transmittance. From the measurement results, for the back contact film, the linear transmittance A of infrared light of wavelength 1000 nm, the linear transmittance B of infrared light of wavelength 1342 nm, the ratio [linear transmittance A (%) / linear transmittance B (%)], And the ratio [linear transmittance A '(%) / linear transmittance B (%)] of linear transmittance A' in the wavelength range of 1000 to 1342 nm and the above linear transmittance B was derived. In addition, for the dicing tape-integrated back contact film, the total light transmittance C and the linear transmittance D of infrared rays with a wavelength of 1342 nm, and the ratio [total light transmittance C (%) / linear transmittance D (%)] Derived.

(2) Haze With regard to the haze of the dicing tape-integrated back contact film obtained in Examples and Comparative Examples, using the total light transmittance C and the linear transmittance D obtained in the above transmittance measurement, Calculated based on
Haze (%) = (total light transmittance C-linear transmittance D) / total light transmittance C

(3) Arithmetic average surface roughness About the dicing tape integrated back contact film obtained in the example and the comparative example, using a light interference surface roughness tester (trade name "WykoNT 9100", manufactured by Nippon Beko Co., Ltd.), 50 times The arithmetic mean surface roughness (Ra) of the back contact film surface and the back surface of the substrate was measured, respectively.

(4) Breaking evaluation About the dicing tape integrated type back contact film obtained by the Example and the comparative example, the cutting evaluation was performed as follows. First, a semiconductor wafer with a thickness of 300 μm and a size of 12 inches is bonded to the back adhesive film surface of the dicing tape-integrated back adhesive film with the ring frame bonded to the adhesive layer under conditions of 80 ° C temperature and 0.15 MPa pressure The Next, the focusing point is aligned on the inside of the semiconductor wafer, and laser light with a wavelength of 1064 nm is irradiated from the dicing tape side along the grid-like (2 mm × 2 mm) planned dividing line to form a modified region inside the semiconductor wafer. did. Thereafter, the ring frame was subjected to heat treatment for 1 hour at a temperature of 80.degree. Then, using a die separator (trade name "DDS 2300", manufactured by Disco Corporation), the semiconductor wafer and the back contact film were cut. Specifically, first cool with a cool expander unit at a temperature of -15 ° C for 2 minutes, cool expand speed (expand speed) 200 mm / sec, and push up amount of push up portion (expanded amount) 15 mm cool expand To cut the semiconductor wafer. Then, after holding for 1 minute in the expanded state, the expansion is further performed under the conditions of speed (expand speed) 1 mm / sec, expand amount 15 mm, the distance between the heater and the dicing tape is 20 mm, and the rotation speed of the dicing tape The dicing tape at the push-up portion was thermally shrunk at 200 ° C. while rotating at 5 ° / sec. In the four sides of each semiconductor chip at this time, the number of sides on which the semiconductor chip and the back contact film were cut was counted, and the ratio of the number of cut sides to the number of all sides was calculated as a cutting ratio. Furthermore, the wavelength of the laser beam to irradiate was changed into the thing of each wavelength of 1080 nm, 1099 nm, and 1342 nm, and the same evaluation was performed. And, in all evaluations at 1064 nm, 1080 nm, 1099 nm and 1342 nm, 場合 is the case where the cutting rate is 90% or more, 場合 when it is 60% or more and less than 90% is ○, The case of less than 30% was evaluated as x. In addition, when the dicing tape integrated type back contact film in all the Examples was used, chipping of the semiconductor chip and peeling from the back contact film did not occur.

DESCRIPTION OF SYMBOLS 1 dicing tape integrated type back surface adhesion film 10 dicing tape 11 base material 12 adhesive layer 20 back surface adhesion film 21 adhesive layer 22 laser mark layer 30 semiconductor wafer 30 a reformed region 31 semiconductor chip

Claims (5)

A dicing tape having a laminated structure including a substrate and an adhesive layer;
And a semiconductor back contact film releasably in close contact with the pressure-sensitive adhesive layer in the dicing tape;
In the semiconductor back contact film, the linear transmittance A of infrared light having a wavelength of 1000 nm and the linear transmittance B of infrared light having a wavelength of 1342 nm are both 20% or more, and the ratio of the linear transmittance A to the linear transmittance B A dicing tape-integrated semiconductor back contact film having a [linear transmittance A (%) / linear transmittance B (%)] of 0.3 to 1.0.   The ratio [linear transmittance A '(%) / linear transmittance B (%)] of the linear transmittance A' of the infrared ray in the wavelength range of 1000 to 1342 nm and the linear transmittance B of the semiconductor back contact film is 0. The dicing tape-integrated semiconductor back contact film according to claim 1, which is 3 to 1.0.   The ratio of the total light transmittance C of infrared light with a wavelength of 1342 nm to the linear transmittance D [total light transmittance C (%) / linear transmittance D (%)] is 1.0 to 5.0. The dicing tape integrated type semiconductor back contact film according to 2.   The dicing tape-integrated semiconductor back contact film according to any one of claims 1 to 3, which has a haze value of 80% or less. The dicing tape-integrated semiconductor back contact film according to any one of claims 1 to 4, wherein both of the substrate back surface and the semiconductor back contact film surface have an arithmetic average surface roughness of 100 nm or less.

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