JP2019110266A - Substrate processing apparatus, control method for substrate processing apparatus, and storage medium storing program - Google Patents

Abstract

An object of the present invention is to polish a substrate more uniformly. The polishing tool includes a first polishing head that slidably contacts a first surface of a substrate and polishes the first surface, and a second polishing head having a smaller diameter than the first polishing head. The second polishing head, which slidably contacts the first surface of the substrate and polishes the first surface, and the first surface of the substrate corresponding to the first polishing head and the second polishing head. And a substrate support mechanism for supporting the substrate by fluid pressure from the opposite second surface side. [Selection diagram] FIG.

Description

  The present invention relates to a substrate processing apparatus, a control method of the substrate processing apparatus, and a storage medium storing a program for causing a computer to execute the control method of the substrate processing apparatus.

  Recently, devices such as memory circuits, logic circuits, and image sensors (for example, CMOS sensors) are becoming more highly integrated. In the process of forming these devices, foreign matter such as fine particles and dust may adhere to the devices. Foreign matter adhering to the device may cause a short circuit between wires and a circuit failure. Therefore, in order to improve the reliability of the device, it is necessary to clean the wafer on which the device is formed to remove foreign matter on the wafer.

  Also on the back surface (non-device surface) of the wafer, foreign substances such as fine particles and dust as described above may be attached. When such foreign matter adheres to the back surface of the wafer, the wafer is separated from the stage reference surface of the exposure apparatus or the wafer surface is inclined with respect to the stage reference surface, resulting in the occurrence of patterning deviation and focal length deviation. Become. In order to prevent such a problem, after applying a resist to the surface (device surface) of the wafer, it is necessary to remove foreign matter adhering to the back surface of the wafer before the exposure step.

  Recently, in addition to the optical exposure technology, a patterning device using a nanoimprint technology has been developed. This nanoimprinting technology is a technology for transferring a wiring pattern by pressing a pressing die for patterning against a resin material applied to a wafer. In the nanoimprint technology, it is necessary to remove foreign matter present on the surface of the wafer in order to avoid transfer of dirt between the die and the wafer and between the wafer and the wafer.

  In JP 2013-172019 A (patent document 1), while rotating the wafer, a scrubber provided with abrasive grains, polishing tape or the like is brought into sliding contact to remove foreign matter adhering to the front and / or back of the wafer. A substrate processing apparatus is disclosed.

JP, 2013-172019, A

  However, if the substrate is polished with only a relatively large polishing head, local lack of polishing may occur in the substrate. For example, the peripheral portion of the substrate has a shorter contact time with the polishing tool of the polishing head than the central portion of the substrate, and the polishing rate tends to be low. Such variations in the polishing rate may reduce the in-plane uniformity of the substrate and may affect the exposure process. The object of the present invention is to solve at least part of the above mentioned problems.

One aspect of the present invention is a first polishing head that slides a polishing tool on a first surface of a substrate to polish the first surface, and a second polishing head having a diameter smaller than that of the first polishing head. A second polishing head for polishing the first surface by bringing a polishing tool into sliding contact with the first surface of the substrate; a second polishing head corresponding to the first polishing head and the second polishing head; The present invention relates to a substrate processing apparatus including a substrate supporting mechanism for supporting the substrate by fluid pressure from a second surface side opposite to one surface.

  One aspect of the present invention is a substrate holding mechanism for holding a substrate and rotating the substrate, comprising: a plurality of rollers capable of coming into contact with the peripheral portion of the substrate, each roller being rotatable around its axial center And a first polishing head configured to slide a polishing tool on a first surface of the substrate to polish the first surface, and a second polishing head having a smaller diameter than the first polishing head. The present invention relates to a substrate processing apparatus including a polishing head, and a second polishing head configured to slide a polishing tool on a first surface of a substrate to polish the first surface.

It is a top view of a substrate processing system provided with a substrate processing device concerning one embodiment. It is a typical top view showing composition of a polish head of a polish unit. It is a typical top view showing composition of a polish head of a polish unit. It is a typical side view of a polish unit concerning a 1st embodiment. It is an example of composition of a static pressure plate. It is an example of composition of a static pressure plate. It is an example of composition of a static pressure plate. It is an example of the planar shape of a static pressure plate. It is an example of the planar shape of a static pressure plate. It is a typical side view of the polish unit concerning a 2nd embodiment. It is a typical top view of the polish unit concerning a 2nd embodiment. The structural example of the moving mechanism of a static pressure plate is shown. It is a typical side view of the polish unit concerning a 3rd embodiment. It is a typical side view of the polish unit concerning a 4th embodiment. It is a structural example of the fluid jet nozzle of a static pressure plate. It is a structural example of the fluid jet nozzle of a static pressure plate. It is an example of the substrate holding mechanism of a polish unit. It is an example of the substrate holding mechanism of a polish unit. It is another example of a grinding | polishing unit. It is another example of a grinding | polishing unit.

First Embodiment
FIG. 1 is a plan view of a substrate processing system provided with a substrate processing apparatus according to an embodiment. A substrate processing system 1 includes a load / unload unit 2 including a front loading unit 3, first and second polishing units 8 and 9 as substrate processing apparatuses, a cleaning unit 11, a drying unit 13, and a controller. 14 and. Further, in the load / unload unit 2, a first transfer robot 4 movable in the arrangement direction of the front load unit 3 is installed. In addition, a second transfer robot 6, a first wafer station 5, and a second wafer station 7 are installed adjacent to the first polishing unit 8 and the second polishing unit 9. Further, the third transport robot 10 is installed adjacent to the cleaning unit 11, and the fourth transport robot 12 is installed between the cleaning unit 11 and the drying unit 13.

  The front loading unit 3 is configured to be able to place one or more wafer cassettes storing a plurality of wafers. The wafer cassette is, for example, an open cassette, a standard manufacturing interface (SMIF) pod, or a front opening unified pod (FOUP). The first transfer robot 4 takes out a wafer from the wafer cassette mounted on the front loading unit 3 and places the wafer on the wafer station 5.

The wafer station 5 is provided with a reversing device (not shown), and reverses the front surface and the back surface of the wafer placed by the first transfer robot 4. The second transfer robot 6 takes out the wafer (in the face down state) after being flipped from the wafer station 5 and carries it into the polishing unit 8 or the polishing unit 9. The polishing unit 8 and the polishing unit 9 each include a substrate holding mechanism for holding and rotating a wafer, and a polishing head provided with a polishing tool, as described later. The polishing unit 8 and the polishing unit 9 are so-called backside polishing apparatuses, and the backside (facing upward) of the wafer is polished by the polishing tool of the polishing head while rotating the wafer by the substrate holding mechanism. Here, the case where both the grinding | polishing unit 8 and the grinding | polishing unit 9 are back surface grinding devices is demonstrated. The wafer removed from the wafer cassette is back-polished in any polishing unit, and then washed and dried and returned to the wafer cassette. In another embodiment, one polishing unit may be a back surface polishing apparatus, and the other polishing unit may be a bevel polishing apparatus or an apparatus for polishing a wafer outer peripheral area. In this case, the wafer polished in one polishing unit is then washed and dried after being polished in the other polishing unit.

  Further, the second transfer robot 6 places the wafer processed by the polishing unit 8 or the polishing unit 9 on the wafer station 7. The third transfer robot 10 takes out the wafer after the polishing process from the wafer station 7 and carries it into the cleaning unit 11. The cleaning unit 11 performs a cleaning process on the wafer after the polishing process. In one embodiment, the cleaning unit 11 comprises an upper roll sponge and a lower roll sponge arranged to sandwich the wafer, and while the cleaning liquid is supplied to both sides of the wafer, the both sides of the wafer are cleaned by these sponges. Do.

  The fourth transfer robot 12 takes out the wafer cleaned by the cleaning unit 11 and carries it into the drying unit 13. The drying unit 13 dries the cleaned wafer. In one embodiment, the drying unit 13 spins the wafer by rotating the wafer about its axis at a high speed. Thereafter, the dried wafer is taken out by the first transfer robot 3 and returned to the wafer cassette.

  The control device 14 controls the operation of each part of the substrate processing apparatus 1 described above. The control device 14 has a memory that stores various setting data and various programs, and a CPU that executes a program of the memory. The storage media that constitute the memory can include volatile storage media and / or non-volatile storage media. The storage medium may include one or more of any storage medium such as, for example, ROM, RAM, hard disk, CD-ROM, DVD-ROM, flexible disk, and the like. The programs stored in the memory include, for example, a program for controlling the transport of each transport robot, a program for controlling the polishing process of each polishing unit, a program for controlling the cleaning process of the cleaning unit, and a program for controlling the drying process of the drying unit. Including. Further, the control device 14 is configured to be communicable with a host controller (not shown) that performs overall control of the substrate processing apparatus 1 and other related devices, and can exchange data with a database possessed by the host controller.

  2A and 2B are schematic plan views showing the configuration of the polishing head of the polishing unit. FIG. 2A shows the case where the polishing head is in the retracted position. FIG. 2B shows the case where the polishing head is in the polishing position. The polishing unit of the present embodiment includes a plurality of polishing heads. Although the case where the polishing unit includes two polishing heads 21 and 23 will be described below as an example, three or more polishing heads may be included. Although not shown in FIGS. 2A and 2B, each polishing unit is provided with a rinse liquid supply nozzle (see FIG. 12) for supplying a rinse liquid to the wafer W.

The polishing head 21 has a diameter larger than the radius of the wafer W. One or more polishing tapes as a polishing tool are attached to the bottom surface of the polishing head 21 (the side that contacts the wafer). For example, three polishing tapes are radially arranged on the bottom surface of the polishing head 21. Both ends of the polishing tape are held by two reels (not shown) disposed in the polishing head 21 so that the lower surface of the polishing tape extending between the two reels can contact the surface of the wafer. In addition, as a polishing tool, other polishing tools, such as a pad containing abrasives and fixed abrasives, can also be used. The polishing head 21 is rotatably held at one end of the swing arm 22. The polishing head 21 is rotated by a head rotation mechanism (not shown) provided on one end side of the swing arm 22. The other end of the swinging arm 22 is connected to a swinging shaft (not shown), and when the swinging shaft is rotated by the rotation of a shaft rotation mechanism (not shown), the swinging arm 22 swings (for example, as shown in FIG. 1 from the state of FIG. 2 or vice versa). By the swing of the swing arm 22, the polishing head 21 is swung between the retracted position (FIG. 2A) and the polishing position (FIG. 2B). Further, a lifting mechanism (not shown) is connected to the swinging shaft, and the polishing head 21 is lifted and lowered by the lifting mechanism.

The polishing head 23 has a diameter smaller than the diameter of the polishing head 21. One or more polishing tapes as a polishing tool are attached to the bottom surface of the polishing head 23 (the side that contacts the wafer). For example, three polishing tapes are radially arranged on the bottom surface of the polishing head 23. Both ends of the polishing tape are held by two reels (not shown) disposed in the polishing head 23, and the lower surface of the polishing tape extending between the two reels can be brought into contact with the surface of the wafer. In addition, as a polishing tool, other polishing tools, such as a pad containing abrasives and fixed abrasives, can also be used. The polishing head 23 is rotatably held at one end of the swing arm 24. The polishing head 23 is rotated by a head rotation mechanism (not shown) provided on one end side of the swing arm 24. The other end of the swing arm 24 is connected to a swing shaft (not shown), and when the swing shaft is rotated by the rotation of a shaft rotation mechanism (not shown), the swing arm 24 swings. By the swinging of the swinging arm 24, the polishing head 23 is swung between the retracted position (FIG. 2A) and the polishing position (FIG. 2B) (for example, from the state of FIG. 1 to the state of FIG. Reverse). Further, a lifting mechanism (not shown) is connected to the swinging shaft, and the polishing head 23 is lifted and lowered by the lifting mechanism. The wafer W is held by the substrate holding mechanism and rotated. The substrate holding mechanism includes, for example, a plurality of rollers 2-11 (FIG. 2A, FIG. 2B, FIG. 12) disposed on the outer peripheral edge of the wafer W, and the wafer W is held by the plurality of rollers 2-11. Then, as each roller 2-11 rotates (rotations) around its axis, each wafer 2-11 rotates the wafer W without revolving. In addition, the substrate holding mechanism may be configured to include a chuck 1-11 that rotates the wafer W by holding the wafer W and revolving as shown in FIG. The rotation direction of each of the polishing heads 21 and 24 may be the same as or different from the rotation direction of the wafer W, as shown in FIG. 2B. The rotational directions of the polishing heads 21 and 24 may be different from each other.
Further, a polishing liquid or pure water is supplied to the polishing surface (in the present embodiment, the back surface) of the wafer W by a nozzle not shown.

  The reason for using the relatively small diameter polishing head 23 in addition to the relatively large diameter polishing head 21 is as follows. At the outer peripheral portion of the wafer W, the contact time by the polishing head 21 is short, and the polishing rate becomes relatively low. Therefore, in the outer peripheral portion of the wafer W, the wafer W is complementarily polished by the small-diameter polishing head 23. Simultaneously with the polishing of the polishing head 21 or after the polishing by the polishing head 21, by polishing the outer peripheral portion of the wafer W additionally by the polishing head 23, it is possible to make the polishing amount of the back surface of the wafer W uniform. As a result, the in-plane uniformity of the back surface of the wafer W after the polishing process can be improved.

FIG. 3 is a schematic side view of the polishing unit according to the first embodiment. Here, illustration of the substrate holding mechanism is omitted. In the polishing units 8 and 9, the above-described polishing heads 21 and 23 abut on the back surface of the wafer W to polish the back surface S1 of the wafer. At this time, in order to press the wafer W from the back surface S1 to the front surface S2 (in this example, from the top to the bottom in this example) by the polishing heads 21 and 23, the substrate supporting mechanism (static The wafer W is supported by the pressure support mechanism 30. In other words, the static pressure supporting mechanism 30 applies a supporting force against the force of the polishing heads 21 and 23 against the back surface of the wafer W from the front surface of the wafer to suppress the wafer W from being bent.

  The static pressure support mechanism 30 includes a static pressure plate 31 and a static pressure plate 33. The static pressure plate 31 is provided corresponding to the polishing head 21. The static pressure plate 31 is formed slightly larger than the diameter of the polishing head 21, and is configured and arranged so as to include the entire polishing head 21 in a plan view. The static pressure plate 31 has a support surface 32 on the side facing the wafer W, and is disposed with a slight gap between the support surface 32 and the surface of the wafer W. The static pressure plate 31 is formed with a fluid supply path to be described later, and a fluid (liquid or gas, for example, pure water) is supplied to the support surface 32 through the fluid supply path. The surface is supported contactlessly by the fluid.

  The static pressure plate 33 is provided corresponding to the polishing head 23. The static pressure plate 33 is formed to be larger than the diameter of the polishing head 23, and is configured and arranged so as to include the entire polishing head 23 in a plan view. The static pressure plate 33 has a support surface 34 on the side facing the wafer W, and is disposed with a slight gap between the support surface 34 and the surface of the wafer W. The static pressure plate 33 is formed with a fluid supply path to be described later, and a fluid (liquid or gas, for example, pure water) is supplied to the support surface 34 via the fluid supply path, whereby The surface is supported contactlessly by the fluid.

  4A to 4C show an example of the construction of a static pressure plate. Here, illustration of the substrate holding mechanism is omitted. Moreover, although the static pressure plate 31 is mentioned as an example and demonstrated here, the static pressure plate 33 also has the same structure. However, the static pressure plate 31 and the static pressure plate 33 may have different types of configurations. For example, the static pressure plate 31 may have the configuration of FIG. 4A, and the static pressure plate 33 may have the configuration of FIG. 4B. In addition, the static pressure plate 31 and the static pressure plate 33 may have configurations other than FIGS. 4 to 4C.

  In the example shown to FIG. 4A, the static pressure plate 31 has the fluid supply path 31a for introduce | transducing the fluid 41 which is the pressurized fluid (pressure fluid). The fluid supply path 31 a is connected to a pocket (recess) 31 b holding the fluid 41. The load applied to the back surface S1 of the substrate W by the polishing head 21 is received by the fluid 41 in the pocket 31b and the fluid overflowing from the pocket 31b to the support surface 32 of the static pressure plate 31. In the example shown in FIG. 4B, the fluid 41 introduced from the fluid supply path 31 a spreads over the entire support surface 32 and receives a load applied to the back surface of the substrate W by the polishing head 21. In the example shown in FIG. 4C, the support surface 32 of the static pressure plate 31 is formed with a large number of through holes 31c, and the fluid 41 is supplied from the fluid supply path 31a to the support surface 32 through the through holes 31c. . The fluid 41 supplied to the support surface 32 receives a load applied to the back surface S 1 of the substrate W by the polishing head 21. FIGS. 4A to 4C also show a plurality of rollers 2-11 (FIGS. 2A, 2B, 12) as the substrate holding mechanism described above with reference to FIGS. 2A, 2B. In a state where the wafer W is held by the plurality of rollers 2-11, each roller 2-11 rotates (rotations) around its axis, so that each wafer 2-11 does not revolve and the wafer W can not rotate. Rotate. In addition, the substrate holding mechanism may be configured to include a chuck 1-11 that rotates the wafer W by holding the wafer W and revolving as shown in FIG.

5A and 5B are examples of planar shapes of static pressure plates. In the example of FIG. 5A, the static pressure plates 31 and 33 have a shape concentric with the polishing heads 21 and 23, respectively. The diameters of the static pressure plates 31 and 33 are formed to be equal to or slightly larger than the diameters of the polishing heads 21 and 23, respectively. In the example of FIG. 5B, the diameter of the static pressure plates 31 and 33 is configured as part of a circle or an ellipse that is larger than the diameter of the polishing heads 21 and 23, respectively. Also,
In FIGS. 5A and 5B, portions of the static pressure plates 31 and 33 adjacent to the outer periphery of the wafer W are shaped so as not to interfere with the substrate holding mechanism (for example, the chuck 1-11 in FIG. 11) holding the wafer W. There is. When using a substrate holding mechanism (for example, the rollers 2-11 in FIGS. 5A, 5B and 12) that does not rotate with the wafer W, the static pressure plates 31, 33 overlap the outer periphery of the wafer W. Alternatively, it may extend to the outside of the outer periphery.

Second Embodiment
FIG. 6A is a schematic side view of the polishing unit according to the second embodiment. FIG. 6B is a schematic plan view of the polishing unit according to the second embodiment. Here, illustration of the substrate holding mechanism is omitted. The polishing unit of the present embodiment differs from the polishing unit according to the first embodiment in that the polishing process is performed while the polishing head 23 having a small diameter swings. The other configuration is the same as that of the first embodiment, and thus the description will not be repeated.

  The swinging of the polishing head 23 is achieved by rotating the swinging arm 24 around the swinging axis, as described above. In addition, the static pressure plate 33 follows the swing of the polishing head 23. That is, the static pressure plate 33 moves so as to always include the polishing head 23 in plan view with the movement of the polishing head 23.

  FIG. 7 shows a configuration example of a static pressure plate moving mechanism. Here, illustration of the substrate holding mechanism is omitted. In this example, the static pressure plate 33 is connected to the ball screw mechanism 36, and the ball screw mechanism 36 is driven by the motor 35. The ball screw mechanism 36 converts the rotational movement of the motor 35 into a linear movement, and reciprocates the static pressure plate 33. In addition, as a moving mechanism of a static pressure plate, not only the structure of a motor and a ball screw mechanism but arbitrary drive mechanisms, such as a rack and pinion mechanism, an air cylinder, and a solenoid, can be used. Since the static pressure plate 33 linearly moves while the polishing head 23 swings in an arc shape, the static pressure plate 33 is configured so that the area of the polishing head 23 can always be included by the static pressure plate 33, The diameter is preferably larger than the diameter of the polishing head 23.

Third Embodiment
FIG. 8 is a schematic side view of the polishing unit according to the third embodiment. Here, illustration of the substrate holding mechanism is omitted. The polishing unit of the present embodiment differs from the polishing unit according to the first embodiment in that the small-diameter static pressure plate 33 is omitted and the large-diameter static pressure plate 31 is configured to be movable. The other configuration is the same as that of the first embodiment, and thus the description will not be repeated.

In the present embodiment, the static pressure plate 31 is movable between a position corresponding to the polishing head 21 and a position corresponding to the polishing head 23. As described above, the static pressure plate 31 is arranged to include the polishing head 21 in a plan view at a position corresponding to the polishing head 21. Further, the static pressure plate 31 is disposed so as to include the polishing head 23 in a plan view at a position corresponding to the polishing head 23. From the relationship between the dimensions of the polishing head 21 and the polishing head 23, the static pressure plate 31 corresponding to the large-diameter polishing head 21 is sufficiently larger than the polishing head 23. The moving mechanism of the polishing head 23 can adopt the same moving mechanism as that described as the moving mechanism for reciprocating the static pressure plate 33 in the second embodiment. That is, any drive mechanism such as a motor and a ball screw mechanism, a rack and pinion mechanism, an air cylinder, and a solenoid can be used. In the present embodiment, after the polishing process by the polishing head 21, the polishing process of the polishing head 23 is performed. Or you may carry out in the reverse order. At the time of polishing processing by the polishing head 21, the static pressure plate 31 is installed at a position (position facing) corresponding to the polishing head 21. While the static pressure plate 31 receives the load from the polishing head 21, the polishing process by the polishing head 21 is performed. Then, at the time of polishing processing of the polishing head 23, the static pressure plate 31 is moved to a position (position facing) corresponding to the polishing head 23 by the moving mechanism. While the static pressure plate 31 receives the load from the polishing head 23, the polishing process by the polishing head 23 is performed.

Fourth Embodiment
FIG. 9 is a schematic side view of the polishing unit according to the fourth embodiment. 10A and 10B are plan views of the static pressure plate. Here, illustration of the substrate holding mechanism is omitted. The present embodiment differs from the first embodiment in that a common static pressure plate 50 is provided for the two polishing heads. The other configuration is the same as that of the first embodiment, and thus the description will not be repeated.

  The static pressure plate 50 is connected to two fluid supply lines 53, 54, and each fluid supply line 53, 54 is provided with a flow control valve 55, 56. The flow control valves 55, 56 have their flow controlled by a signal from the controller 14. Also, the fluid supply lines 53, 54 are connected to the fluid supply source 56, and receive supply of pressure fluid (liquid or gas) from the fluid supply source 56. The liquid is, for example, DIW (pure water).

  On the supporting surface 51 of the static pressure plate 50, as shown in FIG. 10A, a plurality of through holes or fluid jets 31c are formed in the area corresponding to the polishing head 21, and in the area corresponding to the polishing head 23. A plurality of through holes or fluid jets 32c are formed (see FIG. 4C). The plurality of fluid jet outlets 31 c communicate with the fluid supply line 53. The plurality of fluid jets 32 c communicate with the fluid supply line 54. The fluid supplied from the fluid supply line 53 to the support surface 51 through the fluid jet 31 c receives a load from the polishing head 21, and the fluid supplied from the fluid supply line 54 to the support surface 51 through the fluid jet 32 c. Is configured to receive a load by the polishing head 23. When only one of the polishing head 21 or the polishing head 23 is used, the flow control valve 55 or 56 may shut off the supply of fluid to the static pressure plate corresponding to the polishing head not used. The flow control valves 55 and 56 may be replaced by an on-off valve.

  When the small-diameter polishing head 23 is swung, as shown in FIG. 10B, the fluid jet ports 32c are formed in the plurality of areas A1, A2, and A3, and the fluid jet ports of each area are separate fluid supply lines 54A1. , 54A2 and 54A3 (not shown), and control valves provided in the respective fluid supply lines may be controlled to sequentially supply the fluid to the fluid jet ports 32c of the respective regions A1, A2 and A3. . Alternatively, the fluid may be simultaneously supplied to the fluid ejection ports 32c in the entire area A1, A2, A3 (the movable range of the polishing head 23) to cover the entire swing range of the polishing head 23.

FIG. 11 shows an example of the substrate holding mechanism of the polishing unit. Although only one polishing head and static pressure plate are shown here to avoid complication of the drawings, in practice, a plurality of polishing heads and static pressure plates are disposed as described above. Each polishing head and each static pressure plate are shaped so as to avoid each chuck 1-11 on the outer peripheral edge side of the wafer at the polishing position. In this example, the wafer 1-11 is held by clamping the outer periphery of the wafer W with a plurality of chucks 1-11 arranged in plural on the outer periphery of the wafer W. Each chuck 1-11 is fixed to a rotation base 1-16 of the cylindrical substrate rotation mechanism 1-10. The rotation base 16 is rotatably supported by the stationary member 14 via angular contact ball bearings 20, 20. The rotor of the hollow motor 1-12 is fixed to the rotary base 16, and the stator is fixed to the stationary member 14. When the hollow motor 1-12 rotates, the rotary base 16 rotates relative to the stationary member 14, and the chucks 1-11 rotate while holding the wafer W. At this time, each chuck 1-11 revolves around the center of the wafer W. Each chuck 1-11 is configured to be lifted by the lift mechanism 1-30 to release the wafer W. In FIG. 11, the polishing head 1-50 is provided with the polishing tape 1-61 as a polishing tool. The polishing head 1-50 is connected to one end of a swing arm 1-53 via a shaft 1-51, and the other end of the swing arm 1-53 is fixed to a swing shaft 1-54. The swing shaft 1-54 is connected to the shaft rotation mechanism 1-55. When the swing shaft 1-54 is driven by the shaft rotation mechanism 1-55, the polishing head 1-50 moves between the retracted position (FIG. 2A) and the polishing position (FIG. 2A). There is. An elevating mechanism 1-56 for moving the polishing head 1-50 in the vertical direction is further connected to the swing shaft 1-54. The raising and lowering mechanism 1-56 raises and lowers the polishing head 1-50 via the swing shaft 1-54 and the shaft 1-51. The polishing head 1-50 is lowered by the lifting mechanism 1-56 until it contacts the upper surface of the wafer W. As the elevating mechanism 1-56, an air cylinder or a combination of a servomotor and a ball screw is used. The static pressure support mechanism 1-90 includes the static pressure plate 1-91 configured as described above, and the static pressure plate 1-91 is moved up and down by the lift mechanism 1-98 and rotated by the rotation mechanism 1-99. . When the substrate holding mechanism having this configuration is employed, the polishing head and the static pressure plate need to have a shape or arrangement that does not interfere with the chuck 1-11 which revolves during the polishing process.

  FIG. 12 shows an example of the substrate holding mechanism of the polishing unit. In this example, while the wafer W is held by the plurality of rollers 2-11 arranged at the outer peripheral edge of the wafer W, each roller 2-11 rotates (rotations itself) around its axis to rotate each roller 2 11 rotates the wafer W without revolving. In the figure, 2-1 is the back surface of the wafer W, and 2-2 is the front surface of the wafer W. The substrate holding mechanism 2-10 includes a plurality of rollers 2-11 that can contact the outer peripheral edge of the wafer W, and a roller rotation mechanism 2-12 that rotates these rollers 2-11 around their respective axes. ing. In one example, four rollers are provided, but three or less, five or more rollers may be provided. In one embodiment, the roller rotation mechanism 12 comprises a motor, a belt, a pulley, and the like. The roller rotation mechanism 12 rotates the plurality of rollers 2-11 in the same direction at the same speed. During polishing of the wafer W, the outer peripheral edge of the wafer W is held by the plurality of rollers 2-11. The wafer W is held horizontally, and the rotation of the roller 2-11 rotates the wafer W about its axis. The polishing head assembly 2-49 has a polishing head 2-50. The polishing head 2-50 is connected to the swinging arm (not shown) described above. The polishing head 2-50 is connected to a head shaft 2-51 attached to a peristaltic arm. The head shaft 2-51 is connected to a head rotation mechanism 2-58 that rotates the polishing head 2-50 about its axis. Further, an air cylinder 2-57 as a load applying device for applying a downward load to the polishing head 2-50 is connected to the head shaft 2-51. The polishing head 2-50 includes a plurality of polishing tapes 2-61 etc. as polishing tools for polishing the surface of the wafer W. In one embodiment, the head rotation mechanism 58 comprises an arrangement of motors, belts, pulleys, and the like. The static pressure plate 2-90 includes a plurality of fluid jets 2-94 formed on the support surface 2-91 and a fluid supply path 2-92 connected to the fluid jet 2-94. The fluid supply path 2-92 is connected to a fluid supply not shown. In addition, a rinse liquid supply nozzle 2-27 is provided, and the rinse liquid supply nozzle 2-27 supplies the rinse liquid to the center of the wafer W, and the rinse liquid flows on the wafer surface by the centrifugal force of the rotating wafer W. spread. Although one polishing head is illustrated in FIG. 12, two (or more) polishing heads are provided as described above.

  When the substrate holding mechanism of this configuration is adopted, the shape or arrangement of the polishing head and the static pressure plate may be set in advance so as to avoid the plurality of rollers 2-11 in the fixed position, the wafer W is rotating. In addition, the polishing head and the static pressure plate do not interfere with the chuck (roller). Therefore, the polishing head and the static pressure plate can be arranged to reach the outer peripheral edge of the wafer W or extend radially outward beyond the outer peripheral edge of the wafer W.

13 and 14 show other examples of the polishing unit. In this example, the polishing head 3-14 provided with the polishing tape 3-24 is disposed with the front surface of the wafer W on the upper side and the back surface on the lower side,
While polishing the outer peripheral portion of the back surface of the wafer W, it is moved by the polishing head moving mechanism 3-35 to polish the entire outer peripheral region including the bevel portion of the wafer (FIG. 14). In this example, the substrate holding mechanism 12 includes a substrate stage 3-17 for holding the wafer W by vacuum suction, and a motor 3-19 for rotating the substrate stage 3-17. The polishing head 3-14 presses a plurality of rollers holding the polishing tape 3-22 as a polishing tool, a pressing member 3-24 pressing the polishing tape 3-22 against the back surface of the wafer W, and a pressing member 3-24. An air cylinder 3-25 is provided as an actuator for applying pressure. The polishing tape 3-22 is fed from the supply reel to the take-up reel at a predetermined speed via the polishing head 3-14. The polishing head 3-14 is connected to the polishing head moving mechanism 3-35. The polishing head moving mechanism 3-35 is configured to move the polishing head 3-14 outward in the radial direction of the wafer W. The polishing head moving mechanism 3-35 is formed of, for example, a combination of a ball screw and a servomotor. Above and below the wafer W held by the substrate stage 17, liquid supply nozzles for supplying a polishing liquid (pure water) to the wafer W are disposed. In such a configuration, deflection of wafer W is suppressed by arranging static pressure plate 31 or 33 described above on the outer peripheral portion of the surface of wafer W (the position corresponding to polishing head 3-14 in FIG. 13). be able to. In this example, the static pressure plate 31 or 33 is disposed above the wafer W. The top and bottom of the polishing head 3-14 and the static pressure plate 31 or 33 may be interchanged. That is, the polishing head 3-14 may be disposed above the wafer W, and the static pressure plate 31 or 33 may be disposed below the wafer W.

At least the following technical ideas are grasped from the above embodiment.
According to the first aspect, there is provided a first polishing head for polishing the first surface by bringing a polishing tool into sliding contact with the first surface of a substrate, and a second polishing head having a diameter smaller than that of the first polishing head. A second polishing head for polishing the first surface by bringing a polishing tool into sliding contact with the first surface of the substrate; and the first polishing head and the second polishing head respectively corresponding to the first polishing head and the second polishing head. There is provided a substrate processing apparatus comprising: a substrate supporting mechanism for supporting the substrate by fluid pressure from a second surface side opposite to the first surface.

  According to this aspect, the entire first surface of the substrate can be polished by the first polishing head, and the portion of the first surface of the substrate having a low polishing rate can be complementarily polished by the smaller-diameter second polishing head. , The substrate can be polished uniformly. Further, in order to support the substrate from the second surface side of the substrate corresponding to the first polishing head and the second polishing head, respectively, in an appropriate range according to the pressing force by the first polishing head and the second polishing head, The substrate can be supported from the opposite side. Therefore, it is possible to suppress the application of the unnecessary supporting force to the substrate except the area corresponding to the first and second polishing heads. In addition, the amount of fluid used can be reduced.

According to mode 2, in the substrate processing apparatus according to mode 1, the substrate supporting mechanism corresponds to a first static pressure plate for supporting the substrate corresponding to the first polishing head, and corresponding to the second polishing head. And a second static pressure plate for supporting the substrate.
According to this embodiment, since the first and second static pressure plates are respectively provided corresponding to the first and second polishing heads, the configuration is simplified according to the pressing force by the first and second polishing heads. The substrate can be supported from the opposite side to an appropriate extent.

According to mode 3, in the substrate processing apparatus according to mode 2, the second polishing head polishes the substrate while swinging during the polishing process, and the second static pressure plate follows the second polishing head. It is configured to be able to move.
According to this aspect, by oscillating the small-diameter second polishing head, it is possible to further improve the polishing rate in the portion where the polishing rate of the substrate is low. As a result, the polishing time can be shortened. Further, since the second static pressure plate moves following the second polishing head, the area of the substrate on which the second polishing head is pressed can be properly supported by the second static pressure plate.

According to the fourth aspect, in the substrate processing apparatus of the first aspect, the substrate processing mechanism is configured to be movable between an area corresponding to the first polishing head and an area corresponding to the second polishing head. It has a static pressure plate.
According to this aspect, it is possible to realize support of the substrate corresponding to the first polishing head and support of the substrate corresponding to the second polishing head by using a common static pressure plate.

According to the fifth aspect, in the substrate processing apparatus of the first aspect, the substrate processing mechanism includes: a static pressure plate for supporting the substrate corresponding to the first polishing head and the second polishing head; A first fluid line for supplying a fluid to an area corresponding to the first polishing head;
A second fluid line is provided to supply fluid to the area of the static pressure plate corresponding to the second polishing head.
According to this aspect, the first polishing head is supplied with the fluid from the first and second fluid lines to the regions corresponding to the first and second polishing heads without moving the common static pressure plate. The support of the corresponding substrate and the support of the substrate corresponding to the second polishing head can be realized in an appropriate range.

According to the sixth aspect, in the substrate processing apparatus of the fifth aspect, the second polishing head polishes the substrate while swinging during polishing processing, and the static pressure plate is configured to use the fluid as the second component of the substrate. The position supplied on the surface can be changed following the second polishing head.
According to this aspect, by oscillating the small-diameter second polishing head, it is possible to further improve the polishing rate in the portion where the polishing rate of the substrate is low. As a result, the polishing time can be shortened. In addition, since the fluid supply position is moved following the second polishing head, the region of the substrate on which the second polishing head is pressed can be appropriately supported by the fluid.

According to the seventh aspect, in the substrate processing apparatus according to any one of the first to sixth aspects, the second polishing head is arranged to polish the substrate radially outward of the substrate than the first polishing head. Be done.
According to this aspect, the in-plane uniformity of the substrate after polishing can be improved by performing supplementary polishing on the outer peripheral portion of the substrate where the polishing rate tends to be low.

According to the eighth aspect, in the substrate processing apparatus according to any one of the first to seventh aspects, the first surface of the substrate is a surface on which no device is formed, and the polishing process is performed on the second surface of the substrate. After the resist is applied, the polishing process is performed before the exposure process.
According to this aspect, it is possible to suppress the influence of the in-plane uniformity of the non-device surface on the subsequent exposure process on the device surface.

According to the ninth aspect, there is provided a substrate holding mechanism for holding the substrate and rotating the substrate, comprising: a plurality of rollers capable of coming into contact with the peripheral portion of the substrate, each roller being rotatable about its axial center The substrate holding mechanism, a first polishing head configured to slide a polishing tool on a first surface of the substrate to polish the first surface, and a second polishing having a smaller diameter than the first polishing head. There is provided a substrate processing apparatus comprising: a head; and a second polishing head which slides a polishing tool on a first surface of a substrate to polish the first surface.
According to this aspect, the roller holding the substrate does not rotate with the substrate. Therefore, the polishing head can be disposed up to the end of the substrate or to the outer side in the radial direction of the substrate. As a result, the edge of the substrate can be polished. Further, since the entire substrate can be polished by the first polishing head and the portion with a low polishing rate of the substrate can be complementarily polished by the second polishing head having a smaller diameter, the substrate can be polished uniformly.

According to the tenth aspect, while the polishing tool of the first polishing head is in sliding contact with the first surface of the substrate, the polishing tool of the second polishing head having a diameter smaller than that of the first polishing head is applied to the first surface of the substrate Sliding on the first surface of the substrate by sliding contact, from the second surface side opposite to the first surface of the substrate, corresponding to the first polishing head and the second polishing head A substrate processing method is provided, comprising: supporting the substrate.
According to this aspect, the same operation and effect as in the first aspect can be obtained.

According to the eleventh aspect, the plurality of rollers are brought into contact with the peripheral portion of the substrate, and the substrate is rotated by rotating each roller about its axis, the first polishing head during the rotation of the substrate, And polishing the first surface of the substrate with a second polishing head having a diameter smaller than that of the first polishing head.
According to this aspect, the same operation and effect as in the ninth aspect can be obtained.

According to the twelfth aspect, there is provided a non-volatile storage medium storing a program for causing a computer to execute a control method of a substrate processing apparatus, wherein the polishing tool of the first polishing head is in sliding contact with the first surface of the substrate. Polishing the first surface of the substrate by bringing a polishing tool of a second polishing head having a diameter smaller than that of the first polishing head into sliding contact with the first surface of the substrate; A storage for storing a program for causing a computer to support the substrate from the second surface side opposite to the first surface of the substrate corresponding to the first polishing head and the second polishing head It relates to the medium.
According to this aspect, the same operation and effect as in the first aspect can be obtained.

According to the thirteenth aspect, there is provided a non-volatile storage medium storing a program for causing a computer to execute a control method of a substrate processing apparatus, wherein a plurality of rollers are brought into contact with the peripheral portion of the substrate and each roller has its axis Rotating the substrate by rotating it around; during the rotation of the substrate, polishing the first surface of the substrate with a first polishing head and a second polishing head having a smaller diameter than the first polishing head. And a storage medium storing a program for causing a computer to execute.
According to this aspect, the same operation and effect as in the ninth aspect can be obtained.

  Although the embodiments of the present invention have been described above based on several examples, the above-described embodiments of the present invention are for the purpose of facilitating the understanding of the present invention, and are not intended to limit the present invention. . The present invention can be modified and improved without departing from the gist thereof, and the present invention naturally includes the equivalents thereof. In addition, any combination or omission of each component described in the claims and the specification is possible within a range in which at least a part of the above-mentioned problems can be solved, or in a range that exerts at least a part of the effect. It is.

DESCRIPTION OF SYMBOLS 1 substrate processing system 2 load unloading unit 3 front loading unit 4 transfer robot 5 wafer stage 6 transfer robot 7 wafer stage 8 polishing unit 9 polishing unit 10 transfer robot 11 cleaning unit 12 transfer robot 13 drying unit 14 control device 21 polishing head 22 Swing arm 23 Polishing head 24 Swing arm 31 Static pressure plate 32 Support surface 33 Static pressure plate 34 Support surface 41 Fluid 31a Fluid supply path 31b Pocket 31c Fluid port 32c Fluid port 35 Motor 36 Ball screw mechanism 50 Static pressure plate 51 support surface 53 fluid line 54 fluid line 55 flow control valve 56 flow control valve

Claims (13)

A first polishing head which brings a polishing tool into sliding contact with a first surface of a substrate to polish the first surface;
A second polishing head having a diameter smaller than that of the first polishing head, wherein the polishing tool is brought into sliding contact with the first surface of the substrate to polish the first surface;
A substrate supporting mechanism for supporting the substrate by fluid pressure from a second surface side opposite to the first surface of the substrate corresponding to the first polishing head and the second polishing head, respectively;
Substrate processing apparatus provided with: In the substrate processing apparatus according to claim 1,
The substrate support mechanism is
A first static pressure plate supporting the substrate corresponding to the first polishing head;
A second static pressure plate supporting the substrate corresponding to the second polishing head;
Substrate processing apparatus having: In the substrate processing apparatus according to claim 2,
The second polishing head polishes the substrate while swinging during the polishing process,
The substrate processing apparatus, wherein the second static pressure plate is configured to move following the second polishing head. In the substrate processing apparatus according to claim 1,
The substrate processing mechanism
A substrate processing apparatus, comprising: a static pressure plate configured to be movable between a region corresponding to the first polishing head and a region corresponding to the second polishing head. In the substrate processing apparatus according to claim 1,
The substrate processing mechanism
A static pressure plate for supporting the substrate corresponding to the first polishing head and the second polishing head;
A first fluid line for supplying fluid to a region of the static pressure plate corresponding to the first polishing head;
A second fluid line for supplying fluid to an area of the static pressure plate corresponding to the second polishing head;
Substrate processing apparatus having: In the substrate processing apparatus according to claim 5,
The second polishing head polishes the substrate while swinging during the polishing process,
The substrate processing apparatus, wherein the static pressure plate is configured to change the position for supplying the fluid onto the second surface of the substrate following the second polishing head. The substrate processing apparatus according to any one of claims 1 to 6,
A substrate processing apparatus, wherein the second polishing head is arranged to polish the substrate at a radial outer side of the substrate than the first polishing head. The substrate processing apparatus according to any one of claims 1 to 7.
The first surface of the substrate is a surface on which no device is formed,
The substrate processing apparatus, wherein the polishing process is a polishing process performed before an exposure process after a resist is applied to the second surface of the substrate. A substrate holding mechanism for holding a substrate and rotating the substrate, comprising: a plurality of rollers capable of coming into contact with the peripheral portion of the substrate, wherein each roller is configured to be rotatable about its axis. A substrate holding mechanism,
A first polishing head which brings a polishing tool into sliding contact with a first surface of the substrate to polish the first surface;
A second polishing head having a diameter smaller than that of the first polishing head, wherein the polishing tool is brought into sliding contact with the first surface of the substrate to polish the first surface;
Substrate processing apparatus provided with: The polishing tool of the second polishing head having a diameter smaller than that of the first polishing head is brought into sliding contact with the first surface of the substrate while the polishing tool of the first polishing head is in sliding contact with the first surface of the substrate. Polishing the first surface of the substrate;
Supporting the substrate from a second surface side opposite to the first surface of the substrate corresponding to the first polishing head and the second polishing head;
And a substrate processing method. Rotating the substrate by bringing a plurality of rollers into contact with the peripheral edge of the substrate and rotating each roller about its axis;
Polishing the first surface of the substrate with a first polishing head and a second polishing head having a smaller diameter than the first polishing head while the substrate is rotating;
And a substrate processing method. A non-volatile storage medium storing a program for causing a computer to execute a control method of a substrate processing apparatus, comprising:
The polishing tool of the second polishing head having a diameter smaller than that of the first polishing head is brought into sliding contact with the first surface of the substrate while the polishing tool of the first polishing head is in sliding contact with the first surface of the substrate. Polishing the first surface of the substrate;
Supporting the substrate from the second surface side opposite to the first surface of the substrate corresponding to the first polishing head and the second polishing head during the polishing process;
A storage medium storing a program for causing a computer to execute the program. A non-volatile storage medium storing a program for causing a computer to execute a control method of a substrate processing apparatus, comprising:
Rotating the substrate by bringing a plurality of rollers into contact with the peripheral edge of the substrate and rotating each roller about its axis;
Polishing the first surface of the substrate with a first polishing head and a second polishing head having a smaller diameter than the first polishing head while the substrate is rotating;
A storage medium storing a program for causing a computer to execute the program.

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