JP2016074048A - Processing component, processing module, and processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the processing rate of a processing object to improve the in-plane uniformity of the processing object.SOLUTION: A buff processing component 350 includes: heads to which buff pads, which are placed in contact with a wafer W and moved relative to the wafer W to perform predetermined processing to the wafer W, are attached; and buff arms 600-1, 600-2 for holding the heads. The heads include: a first buff head 500-1 to which a first buff pad 502-1 having a diameter smaller than that of the wafer W is attached; and a second buff head 500-2 to which a second buff pad 502-2 having a diameter smaller than that of the first buff pad 502-1 is attached, the second buff head being different from the first buff head 500-1.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a processing component, a processing module, and a processing method.

  In recent years, a processing apparatus has been used to perform various types of processing on a processing target (for example, a substrate such as a semiconductor wafer or various types of films formed on the surface of the substrate). As an example of the processing apparatus, a CMP (Chemical Mechanical Polishing) apparatus for performing a polishing process or the like of an object to be processed can be given.

  The CMP apparatus includes a polishing unit for performing a polishing process on a processing target, a cleaning unit for performing a cleaning process and a drying process on the processing target, and a processing unit that delivers the processing target to the polishing unit and performs a cleaning process by the cleaning unit. And a load / unload unit that receives the dried processed object. The CMP apparatus also includes a transport mechanism that transports the processing object in the polishing unit, the cleaning unit, and the load / unload unit. The CMP apparatus sequentially performs various processes such as polishing, cleaning, and drying while conveying a processing object by a conveyance mechanism.

  Further, in the CMP apparatus, for the purpose of removing polishing liquid, polishing residue, etc. on the surface of the processing object after the polishing process, a table on which the processing object is installed, and a head to which a pad having a smaller diameter than the processing object is attached, In some cases, a processing unit is provided that includes an arm that holds the head and moves horizontally in the surface of the processing object. A processing unit performs a predetermined process with respect to a processing target object by making a pad contact a processing target object and making it move relatively.

  Here, in the prior art, a processing unit including a plurality of heads each having a plurality of pads each having a smaller diameter than the processing object and a plurality of arms each holding the plurality of heads is employed. According to this conventional technique, since a plurality of pads can be brought into contact with the processing object, the contact area between the pad and the processing object increases, and as a result, the processing rate can be improved. It is done.

US Pat. No. 6,561,881

  However, the prior art does not consider improving the in-plane uniformity of the object to be processed.

  That is, the above processing unit rotates the table and the head, and while the pad and the processing object are in contact with each other, the arm is reciprocally swung along the radial direction of the processing surface of the processing object. Process the entire processing surface of the object. Here, when the arm is swung, the peripheral portion of the processing surface of the processing object has a shorter contact time with the pad than the central portion of the processing surface. In some cases, the uniformity of processing may be impaired.

In this regard, the conventional technique simply uses a plurality of pads having a diameter smaller than that of the processing object, so that even if the processing rate can be improved, the in-plane uniformity of the processing object cannot be improved. It seems difficult.

  Then, this invention makes it a subject to improve the processing rate of a processing target object, and to improve the in-plane uniformity of a processing target object.

  One form of the processing component of the present invention is made in view of the above problems, and is a head to which a pad for performing a predetermined process on the processing object is attached by bringing it into contact with the processing object and making a relative movement. And an arm for holding the head, wherein the head includes a first head to which a first pad having a smaller diameter than the object to be processed is attached, and a second pad having a smaller diameter than the first pad. And a second head different from the first head to be attached.

  In one form of the processing module including a processing component, the arm includes a first arm and a second arm different from the first arm, and the first head is held by the first arm. The second head may be held by the second arm.

  Moreover, one form of the processing module provided with the processing component WHEREIN: A said 2nd head may be hold | maintained at a said 2nd arm so that a said 2nd pad may contact the peripheral part of the said process target object.

  The processing module may include a plurality of second heads to which the plurality of second pads are respectively attached, and the plurality of second heads may include the plurality of second pads. It may be held by the second arm so as to be in contact with the peripheral edge of the object to be processed adjacent to the peripheral edge of the object.

  In one form of the processing module including a processing component, the arm may include a single arm, and the first head and the second head may be held by the single arm.

  In one form of the processing module including the processing component, the second head may be held by the single arm so that the second pad is in contact with at least a peripheral portion of the processing object.

  In one form of the processing module having a processing component, the first head and the second head are held by the single arm so as to be adjacent to each other along the swinging direction of the single arm. Also good.

  Further, in one form of the processing module including a processing component, the processing module includes a plurality of second heads to which the plurality of second pads are respectively attached, the first head being held by the single arm, The second head may be held by the single arm so as to be adjacent to both sides of the first head along the swinging direction of the single arm.

  In one form of the processing module including a processing component, the arm includes a first arm and a second arm connected to the first arm, and the first head is connected to the first arm. The second head may be held by the second arm.

Moreover, one form of the processing module of this invention is provided with one of said processing components and the table holding the said process target object, supplies a process liquid to the said process target object, the said table, and the said head , The first and second pads are brought into contact with the processing object simultaneously or alternately, and the processing object is processed by swinging the arm.

  Moreover, in one form of the processing module, the processing module may be a buff processing module for performing buff processing on the processing object.

  In one embodiment of the processing module, when the pad includes a plurality of pads, the type or material of at least one pad may be different from the type or material of another pad.

  Moreover, in one form of the processing module, a plurality of dressers for conditioning the pad may be provided.

  In one embodiment of the processing module, the diameter, type, or material of at least one of the plurality of dressers may be different from the diameter, type, or material of other dressers.

One form of the processing method of the present invention is to perform a predetermined first process on the processing object by bringing the first pad having a diameter smaller than that of the processing object into contact with the processing object and causing relative movement.
A predetermined second process is performed on the processing object by bringing a second pad having a diameter smaller than that of the first pad into contact with the processing object and causing a relative movement.

  Moreover, in one form of the processing method, the second processing may be executed by causing the second pad to contact with a peripheral portion of the processing object and relatively moving the second pad.

  Further, in one embodiment of the processing method, the first pad is further conditioned by bringing the first pad into contact with the dresser, and the second pad is brought into contact with the dresser and relatively moving. The second pad may be conditioned.

  In one form of the processing method, the first process and the second process may be performed simultaneously, and the conditioning of the first pad and the conditioning of the second pad may be performed simultaneously.

  Further, in one form of the processing method, the conditioning of the second pad may be performed simultaneously during the first processing, and the conditioning of the first pad may be performed simultaneously during the second processing.

  In one form of the processing method, the first process and the second process may be started at different timings, and the conditioning of the first pad and the conditioning of the second pad may be started at different timings.

  In one form of the processing method, the first process and the second process include a table that holds the processing object, a plurality of heads to which the first pad and the second pad are attached, and the plurality of heads. In a processing module comprising one or a plurality of arms for holding a head, a processing liquid is supplied to the processing object, the table and the head are rotated, and the first pad and the second pad are It may be performed by contacting the object to be processed simultaneously or alternately and swinging the arm.

  According to this invention of this application, the processing rate of a processing target object can be improved, and the in-plane uniformity of a processing target object can be improved.

FIG. 1 is a plan view showing the overall configuration of the processing apparatus of this embodiment. FIG. 2 is a perspective view schematically showing the polishing module. FIG. 3A is a plan view of the cleaning unit, and FIG. 3B is a side view of the cleaning unit. FIG. 4 is a diagram illustrating a schematic configuration of the upper buff processing module. FIG. 5 is a diagram illustrating a schematic configuration of the buff processing component of the first embodiment. FIG. 6 is a diagram illustrating a schematic configuration of a buff processing component according to the second embodiment. FIG. 7 is a diagram illustrating a schematic configuration of a buff processing component according to the third embodiment. FIG. 8 is a diagram illustrating a schematic configuration of a buff processing component according to the fourth embodiment. FIG. 9 is a diagram illustrating a schematic configuration of a buff processing component according to the fifth embodiment. FIG. 10 is a diagram illustrating a schematic configuration of a buff processing component according to the sixth embodiment. FIG. 11 is a diagram illustrating a schematic configuration of a buff processing component according to the seventh embodiment. FIG. 12 is a flowchart of the processing method of this embodiment. FIG. 13 is a flowchart of the processing method of this embodiment. FIG. 14 is a flowchart of the processing method of this embodiment. FIG. 15 is a flowchart of the processing method of this embodiment.

  Hereinafter, a processing component, a processing module, and a processing method according to an embodiment of the present invention will be described with reference to the drawings.

<Processing device>
FIG. 1 is a plan view showing the overall configuration of a processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, a processing apparatus (CMP apparatus) 1000 for processing a processing target includes a substantially rectangular housing 1. The interior of the housing 1 is partitioned into a load / unload unit 2, a polishing unit 3, and a cleaning unit 4 by partition walls 1a and 1b. The load / unload unit 2, the polishing unit 3, and the cleaning unit 4 are assembled independently and exhausted independently. The cleaning unit 4 also includes a power supply unit that supplies power to the processing apparatus, and a control device 5 that controls the processing operation.

<Load / Unload unit>
The load / unload unit 2 includes two or more (four in this embodiment) front load units 20 on which wafer cassettes for stocking a large number of processing objects (for example, wafers (substrates)) are placed. These front load portions 20 are disposed adjacent to the housing 1 and are arranged along the width direction (direction perpendicular to the longitudinal direction) of the processing apparatus. The front load unit 20 can be equipped with an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). Here, SMIF and FOUP are sealed containers that can maintain an environment independent of the external space by accommodating a wafer cassette inside and covering with a partition wall.

  Further, a traveling mechanism 21 is laid along the front load portion 20 in the load / unload unit 2. On the traveling mechanism 21, two transfer robots (loader, transfer mechanism) 22 that can move along the arrangement direction of the wafer cassettes are installed. The transfer robot 22 can access the wafer cassette mounted on the front load unit 20 by moving on the traveling mechanism 21. Each transfer robot 22 has two hands up and down. The upper hand is used when returning processed wafers to the wafer cassette. The lower hand is used when a wafer before processing is taken out from the wafer cassette. In this way, the upper and lower hands can be used properly. Further, the lower hand of the transfer robot 22 is configured so that the wafer can be reversed.

  Since the load / unload unit 2 is an area that needs to be kept clean, the pressure inside the load / unload unit 2 is higher than that of any of the outside of the processing apparatus, the polishing unit 3, and the cleaning unit 4. Is always maintained. The polishing unit 3 is the most dirty area because slurry is used as the polishing liquid. Accordingly, a negative pressure is formed inside the polishing unit 3, and the pressure is maintained lower than the internal pressure of the cleaning unit 4. The load / unload unit 2 is provided with a filter fan unit (not shown) having a clean air filter such as a HEPA filter, a ULPA filter, or a chemical filter. From the filter fan unit, clean air from which particles, toxic vapor, or toxic gas has been removed is constantly blown out.

<Polishing unit>
The polishing unit 3 is an area where the wafer is polished (flattened). The polishing unit 3 includes a first polishing module 3A, a second polishing module 3B, a third polishing module 3C, and a fourth polishing module 3D. As shown in FIG. 1, the first polishing module 3A, the second polishing module 3B, the third polishing module 3C, and the fourth polishing module 3D are arranged along the longitudinal direction of the processing apparatus.

  As shown in FIG. 1, the first polishing module 3A includes a polishing table 30A to which a polishing pad (polishing tool) 10 having a polishing surface is attached, and holds the wafer against the polishing pad 10 on the polishing table 30A. A top ring 31A for polishing, a polishing liquid supply nozzle 32A for supplying a polishing liquid or a dressing liquid (for example, pure water) to the polishing pad 10, and a dresser for dressing the polishing surface of the polishing pad 10 Atomizer for removing slurry and polishing products on polishing surface and polishing pad residue due to dressing by injecting a mixed fluid or liquid (for example, pure water) of 33A, liquid (for example, pure water) and gas (for example, nitrogen gas) 34A.

  Similarly, the second polishing module 3B includes a polishing table 30B, a top ring 31B, a polishing liquid supply nozzle 32B, a dresser 33B, and an atomizer 34B. The third polishing module 3C includes a polishing table 30C, a top ring 31C, a polishing liquid supply nozzle 32C, a dresser 33C, and an atomizer 34C. The fourth polishing module 3D includes a polishing table 30D, a top ring 31D, a polishing liquid supply nozzle 32D, a dresser 33D, and an atomizer 34D.

  Since the first polishing module 3A, the second polishing module 3B, the third polishing module 3C, and the fourth polishing module 3D have the same configuration, only the first polishing module 3A will be described below.

FIG. 2 is a perspective view schematically showing the first polishing module 3A. The top ring 31 </ b> A is supported by the top ring shaft 36. The polishing pad 10 is affixed to the upper surface of the polishing table 30A. The upper surface of the polishing pad 10 forms a polishing surface for polishing the wafer W. Note that fixed abrasive grains may be used in place of the polishing pad 10. The top ring 31 </ b> A and the polishing table 30 </ b> A are configured to rotate around their axes as indicated by arrows. The wafer W is held on the lower surface of the top ring 31A by vacuum suction. At the time of polishing, in a state where the polishing liquid is supplied from the polishing liquid supply nozzle 32A to the polishing surface of the polishing pad 10, the wafer W to be polished is pressed against the polishing surface of the polishing pad 10 by the top ring 31A and polished.

<Transport mechanism>
Next, a transport mechanism for transporting the wafer will be described. As shown in FIG. 1, the first linear transporter 6 is disposed adjacent to the first polishing module 3A and the second polishing module 3B. The first linear transporter 6 has four transfer positions along the direction in which the polishing modules 3A and 3B are arranged (first transfer position TP1, second transfer position TP2, and third transfer position in order from the load / unload unit side). TP3 and fourth transfer position TP4).

  Further, the second linear transporter 7 is disposed adjacent to the third polishing module 3C and the fourth polishing module 3D. The second linear transporter 7 has three transfer positions along the direction in which the polishing modules 3C and 3D are arranged (a fifth transfer position TP5, a sixth transfer position TP6, and a seventh transfer position in order from the load / unload unit side). TP7).

  The wafer is transferred to the polishing modules 3A and 3B by the first linear transporter 6. The top ring 31A of the first polishing module 3A moves between the polishing position and the second transport position TP2 by the swing operation of the top ring head. Therefore, the wafer is transferred to the top ring 31A at the second transfer position TP2. Similarly, the top ring 31B of the second polishing module 3B moves between the polishing position and the third transfer position TP3, and the delivery of the wafer to the top ring 31B is performed at the third transfer position TP3. The top ring 31C of the third polishing module 3C moves between the polishing position and the sixth transfer position TP6, and the delivery of the wafer to the top ring 31C is performed at the sixth transfer position TP6. The top ring 31D of the fourth polishing module 3D moves between the polishing position and the seventh transfer position TP7, and the delivery of the wafer to the top ring 31D is performed at the seventh transfer position TP7.

  A lifter 11 for receiving a wafer from the transfer robot 22 is disposed at the first transfer position TP1. The wafer is transferred from the transfer robot 22 to the first linear transporter 6 via the lifter 11. A shutter (not shown) is provided between the lifter 11 and the transfer robot 22 in the partition wall 1a. When the wafer is transferred, the shutter is opened so that the wafer is transferred from the transfer robot 22 to the lifter 11. It has become. A swing transporter 12 is disposed between the first linear transporter 6, the second linear transporter 7, and the cleaning unit 4. The swing transporter 12 has a hand that can move between the fourth transport position TP4 and the fifth transport position TP5. Wafer transfer from the first linear transporter 6 to the second linear transporter 7 is performed by the swing transporter 12. The wafer is transferred to the third polishing module 3C and / or the fourth polishing module 3D by the second linear transporter 7. Further, the wafer polished by the polishing unit 3 is conveyed to the cleaning unit 4 via the swing transporter 12. A temporary placement table 180 for a wafer W installed on a frame (not shown) is disposed on the side of the swing transporter 12. The temporary placement table 180 is disposed adjacent to the first linear transporter 6 and is located between the first linear transporter 6 and the cleaning unit 4.

<Washing unit>
FIG. 3A is a plan view showing the cleaning unit 4, and FIG. 3B is a side view showing the cleaning unit 4. As shown in FIGS. 3A and 3B, the cleaning unit 4 includes a roll cleaning chamber 190, a first transfer chamber 191, a pen cleaning chamber 192, a second transfer chamber 193, and a drying unit. The chamber 194 is divided into a buff processing chamber 300 and a third transfer chamber 195. The pressure balance among the polishing unit 3, the roll cleaning chamber 190, the pen cleaning chamber 192, the drying chamber 194, and the buff processing chamber 300 is as follows: drying chamber 194> roll cleaning chamber 190 and pen cleaning chamber 192> buff processing. Chamber 300 ≧ polishing unit 3 can be established. The polishing unit uses a polishing liquid, and the buffing chamber may also be used as a buffing liquid. Therefore, by making the pressure balance as described above, it is possible to prevent the cleaning of the particle components such as abrasive grains in the polishing liquid and the flow into the drying chamber, and thus the cleanliness of the cleaning and drying chamber. Maintenance is possible.

  In the roll cleaning chamber 190, an upper roll cleaning module 201A and a lower roll cleaning module 201B arranged in the vertical direction are arranged. The upper roll cleaning module 201A is disposed above the lower roll cleaning module 201B. The upper roll cleaning module 201A and the lower roll cleaning module 201B clean the wafer by pressing two rotating sponges (first cleaning tools) against the front and back surfaces of the wafer while supplying the cleaning liquid to the front and back surfaces of the wafer. It is a washing machine. Between the upper roll cleaning module 201A and the lower roll cleaning module 201B, a temporary wafer holder 204 is provided.

  In the pen cleaning chamber 192, an upper pen cleaning module 202A and a lower pen cleaning module 202B arranged in the vertical direction are arranged. The upper pen cleaning module 202A is disposed above the lower pen cleaning module 202B. The upper pen cleaning module 202A and the lower pen cleaning module 202B press the rotating pencil sponge (second cleaning tool) against the wafer surface and swing it in the radial direction of the wafer while supplying the cleaning liquid to the wafer surface. Is a cleaning machine for cleaning a wafer. Between the upper pen cleaning module 202A and the lower pen cleaning module 202B, a temporary wafer placement table 203 is provided.

  In the drying chamber 194, an upper drying module 205A and a lower drying module 205B arranged in the vertical direction are arranged. The upper drying module 205A and the lower drying module 205B are isolated from each other. Filter fan units 207A and 207B for supplying clean air into the drying modules 205A and 205B are provided above the upper drying module 205A and the lower drying module 205B, respectively.

  The upper roll cleaning module 201A, the lower roll cleaning module 201B, the upper pen cleaning module 202A, the lower pen cleaning module 202B, the temporary placement table 203, the upper drying module 205A, and the lower drying module 205B are bolted to a frame (not shown). Fixed through.

In the first transfer chamber 191, a first transfer robot (transfer mechanism) 209 that can move up and down is arranged. In the second transfer chamber 193, a second transfer robot 210 that can move up and down is arranged. In the third transfer chamber 195, a third transfer robot (transfer mechanism) 213 capable of moving up and down is arranged. The first transfer robot 209, the second transfer robot 210, and the third transfer robot 213 are movably supported by support shafts 211, 212, and 214 that extend in the vertical direction. The first transfer robot 209, the second transfer robot 210, and the third transfer robot 213 have a drive mechanism such as a motor inside, and can move up and down along the support shafts 211, 212, and 214. ing. The first transfer robot 209 has two upper and lower hands like the transfer robot 22. As shown by the dotted line in FIG. 3A, the first transfer robot 209 is disposed at a position where the lower hand can access the temporary table 180 described above. When the lower hand of the first transfer robot 209 accesses the temporary table 180, a shutter (not shown) provided on the partition wall 1b is opened.

  The first transfer robot 209 includes a temporary placing table 180, an upper roll cleaning module 201A, a lower roll cleaning module 201B, a temporary placing table 204, a temporary placing table 203, an upper pen cleaning module 202A, and a lower pen cleaning module 202B. It operates so that the wafer W may be conveyed between. The first transfer robot 209 uses the lower hand when transferring the wafer before cleaning (wafer to which slurry is attached), and uses the upper hand when transferring the wafer after cleaning.

  The second transfer robot 210 operates to transfer the wafer W between the upper pen cleaning module 202A, the lower pen cleaning module 202B, the temporary placement table 203, the upper drying module 205A, and the lower drying module 205B. . Since the second transfer robot 210 transfers only the cleaned wafer, it has only one hand. The transfer robot 22 shown in FIG. 1 takes out the wafer from the upper drying module 205A or the lower drying module 205B using the upper hand, and returns the wafer to the wafer cassette. When the upper hand of the transfer robot 22 accesses the drying modules 205A and 205B, a shutter (not shown) provided on the partition wall 1a is opened.

  The buff processing chamber 300 includes an upper buff processing module 300A and a lower buff processing module 300B. The third transfer robot 213 transfers the wafer W between the upper roll cleaning module 201A, the lower roll cleaning module 201B, the temporary placement table 204, the upper buff processing module 300A, and the lower buff processing module 300B. Operate.

  In the present embodiment, an example in which the buff processing chamber 300, the roll cleaning chamber 190, and the pen cleaning chamber 192 are arranged in order from the far side from the load / unload unit 2 in the cleaning unit 4 is shown. However, it is not limited to this. The arrangement mode of the buff processing chamber 300, the roll cleaning chamber 190, and the pen cleaning chamber 192 can be appropriately selected according to the quality and throughput of the wafer. In the present embodiment, an example in which the upper buff processing module 300A and the lower buff processing module 300B are provided is shown, but the present invention is not limited to this, and only one buff processing module may be provided. In this embodiment, the roll cleaning module and the pen cleaning module are described as the modules for cleaning the wafer W in addition to the buff processing chamber 300. However, the present invention is not limited to this, and two-fluid jet cleaning (2FJ cleaning) ) Or megasonic cleaning. In the two-fluid jet cleaning, a micro droplet (mist) placed in a high-speed gas is ejected from the two-fluid nozzle toward the wafer W to collide with it, and a shock wave generated by the collision of the micro droplet on the wafer W surface is used. Thus, particles or the like on the surface of the wafer W are removed (cleaned). In the megasonic cleaning, ultrasonic waves are applied to the cleaning liquid, and the action force due to the vibration acceleration of the cleaning liquid molecules is applied to the adhered particles such as particles to remove them. Hereinafter, the upper buff processing module 300A and the lower buff processing module 300B will be described. Since the upper buff processing module 300A and the lower buff processing module 300B have the same configuration, only the upper buff processing module 300A will be described.

<Buff processing module>
FIG. 4 is a diagram illustrating a schematic configuration of the upper buff processing module. As shown in FIG. 4, the upper buff processing module 300A includes a buffing table 400 on which a wafer W is installed, a buff processing component 350, a liquid supply system 700 for supplying a buff processing liquid, and a buff pad 502. And a conditioning unit 800 for performing sharpening. The buff processing component 350 includes a buff head 500 in which a buff pad 502 for performing buff processing is attached to the processing surface of the wafer W, and a buff arm 600 that holds the buff head 500. 4 shows an example of the buff processing component 350 including a single buff arm 600 and a single buff head 500 in order to explain the basic configuration of the buff processing component 350. However, actually, the buff processing component 350 of the present embodiment has a configuration described in FIG.

  The buffing liquid includes at least one of DIW (pure water), cleaning chemical liquid, and polishing liquid such as slurry. There are mainly two types of buffing methods. One is a method of removing contaminants such as slurry remaining on the wafer to be processed and a residue of a polishing product when contacting the buff pad, and the other is the above-mentioned contamination. This is a method of removing a fixed amount of a processing target to which an object has adhered by polishing or the like. In the former, the buffing liquid is preferably a cleaning chemical or DIW, and in the latter, a polishing liquid is preferable. However, in the latter case, the removal amount in the above processing is, for example, less than 10 nm, preferably 5 nm or less, which is desirable for maintaining the state of the surface to be processed (flatness and remaining film amount) after CMP. In some cases, the removal rate is not as high as that of normal CMP. In such a case, the processing speed may be adjusted by appropriately performing a treatment such as dilution on the polishing liquid. The buff pad 502 is formed of, for example, a foamed polyurethane hard pad, a suede soft pad, or a sponge. The type of the buff pad may be appropriately selected according to the material of the processing object and the state of the contaminant to be removed. For example, when the contaminant is buried in the surface of the object to be treated, a hard pad that can easily apply physical force to the contaminant, that is, a pad having high hardness or rigidity, may be used as the buff pad. On the other hand, when the object to be processed is a material having a low mechanical strength such as a Low-k film, a soft pad may be used to reduce damage to the surface to be processed. In addition, when the buffing liquid is a polishing liquid such as slurry, the removal speed of the object to be treated, the removal efficiency of contaminants, and the presence or absence of damage are not determined solely by the hardness or rigidity of the buff pad, so it may be selected as appropriate. good. The surface of these buff pads may be provided with groove shapes such as concentric grooves, XY grooves, spiral grooves, and radial grooves. Furthermore, at least one hole penetrating the buff pad may be provided in the buff pad, and the buff treatment liquid may be supplied through the main hole. Moreover, you may use the sponge-like material which can permeate | transmit a buff processing liquid like a PVA sponge, for example. As a result, the flow distribution of the buffing liquid in the buff pad surface can be made uniform, and the contaminants removed by the buffing process can be quickly discharged.

  The buff table 400 has a mechanism for adsorbing the wafer W. Further, the buffing table 400 can be rotated around the rotation axis A by a driving mechanism (not shown). Further, the buff table 400 may be configured to cause the wafer W to perform an angular rotation motion or a scroll motion by a driving mechanism (not shown). The buff pad 502 is attached to the surface of the buff head 500 that faces the wafer W. The buff head 500 can be rotated around the rotation axis B by a driving mechanism (not shown). Further, the buff head 500 can press the buff pad 502 against the processing surface of the wafer W by a driving mechanism (not shown). The buff arm 600 can move the buff head 500 within the radius or diameter of the wafer W as indicated by an arrow C. Further, the buff arm 600 can swing the buff head 500 to a position where the buff pad 502 faces the conditioning unit 800.

The conditioning unit 800 is a member for conditioning the surface of the buff pad 502. The conditioning unit 800 includes a dress table 810 and a dresser 820 installed on the dress table 810. The dress table 810 can be rotated around the rotation axis D by a driving mechanism (not shown). Further, the dress table 810 may cause the dresser 820 to perform a scrolling motion by a driving mechanism (not shown). The dresser 820 is a diamond dresser in which diamond particles are electrodeposited and fixed on the surface, or diamond abrasive grains are arranged on the entire surface or part of the contact surface with the buff pad, and the resin brush bristles are in contact with the buff pad. The brush dresser is arranged on the entire surface or a part of it, or a combination thereof.

  When conditioning the buff pad 502, the upper buff processing module 300 </ b> A rotates the buff arm 600 until the buff pad 502 reaches a position facing the dresser 820. The upper buff processing module 300A performs conditioning of the buff pad 502 by rotating the dress table 810 around the rotation axis D, rotating the buff head 500, and pressing the buff pad 502 against the dresser 820. As the conditioning condition, the conditioning load is ˜80 N, and it is still better from the viewpoint of the life of the buff pad to be 40 N or less. Further, it is desirable to use the buff pad 502 and the dresser 820 at a rotation speed of 500 rpm or less. Although this embodiment shows an example in which the processing surface of the wafer W and the dress surface of the dresser 820 are installed along the horizontal direction, the present invention is not limited to this. For example, the upper buff processing module 300A can arrange the buff table 400 and the dress table 810 so that the processing surface of the wafer W and the dress surface of the dresser 820 are installed along the vertical direction. In this case, the buff arm 600 and the buff head 500 perform buff processing by bringing the buff pad 502 into contact with the processing surface of the wafer W arranged in the vertical direction, and buff pad against the dress surface of the dresser 820 arranged in the vertical direction. It arrange | positions so that 502 can be made to contact and a conditioning process can be performed. Further, all or a part of the buff arm 600 is rotated so that either the buff table 400 or the dress table 810 is arranged in the vertical direction and the buff pad 502 arranged on the buff arm 600 is perpendicular to each table surface. Also good.

  The liquid supply system 700 includes a pure water nozzle 710 for supplying pure water (DIW) to the processing surface of the wafer W. The pure water nozzle 710 is connected to a pure water supply source 714 via a pure water pipe 712. The pure water pipe 712 is provided with an on-off valve 716 that can open and close the pure water pipe 712. The control device 5 can supply pure water to the processing surface of the wafer W at an arbitrary timing by controlling the opening / closing of the on-off valve 716.

  In addition, the liquid supply system 700 includes a chemical nozzle 720 for supplying a chemical (Chemi) to the processing surface of the wafer W. The chemical solution nozzle 720 is connected to a chemical solution supply source 724 via a chemical solution pipe 722. The chemical solution pipe 722 is provided with an on-off valve 726 that can open and close the chemical solution pipe 722. The control device 5 can supply the chemical solution to the processing surface of the wafer W at an arbitrary timing by controlling the opening / closing of the on-off valve 726.

  The upper buff processing module 300A can selectively supply a polishing liquid such as pure water, a chemical solution, or a slurry to the processing surface of the wafer W through the buff arm 600, the buff head 500, and the buff pad 502. .

  That is, the branched pure water pipe 712 a branches from between the pure water supply source 714 and the on-off valve 716 in the pure water pipe 712. Further, a branched chemical liquid pipe 722 a branches from between the chemical liquid supply source 724 and the on-off valve 726 in the chemical liquid pipe 722. The branched pure water pipe 712 a, the branched chemical liquid pipe 722 a, and the polishing liquid pipe 732 connected to the polishing liquid supply source 734 merge with the liquid supply pipe 740. The branch pure water pipe 712a is provided with an on-off valve 718 that can open and close the branch pure water pipe 712a. The branch chemical liquid pipe 722a is provided with an on-off valve 728 that can open and close the branch chemical liquid pipe 722a. The polishing liquid pipe 732 is provided with an on-off valve 736 that can open and close the polishing liquid pipe 732.

The first end of the liquid supply pipe 740 is connected to three lines of a branched pure water pipe 712 a, a branched chemical liquid pipe 722 a, and a polishing liquid pipe 732. The liquid supply pipe 740 extends through the inside of the buff arm 600, the center of the buff head 500, and the center of the buff pad 502. The second end of the liquid supply pipe 740 opens toward the processing surface of the wafer W. The control device 5 controls the opening / closing of the opening / closing valve 718, the opening / closing valve 728, and the opening / closing valve 736, so that any of the polishing liquid such as pure water, chemical liquid, and slurry is applied to the processing surface of the wafer W at any timing. One or a mixture of any combination thereof can be supplied.

  The upper buff processing module 300A supplies the processing liquid to the wafer W via the liquid supply pipe 740 and rotates the buff table 400 around the rotation axis A to press the buff pad 502 against the processing surface of the wafer W, thereby The wafer W can be buffed by swinging in the direction of arrow C while rotating around the rotation axis B. Although the conditions in the buff processing are basically this processing is defect removal by mechanical action, on the other hand, considering the reduction of damage to the wafer W, the pressure is 3 psi or less, preferably 2 psi or less. desirable. Further, the rotational speeds of the wafer W and the buff head 500 are desirably 1000 rpm or less in consideration of the in-plane distribution of the buff processing liquid. Moreover, the moving speed of the buff head 500 is 300 mm / sec or less. However, since the distribution of the optimum movement speed differs depending on the rotation speed of the wafer W and the buff head 500 and the movement distance of the buff head 500, it is desirable that the movement speed of the buff head 500 is variable in the wafer W plane. As a method of changing the moving speed in this case, for example, a method in which the swing distance in the wafer W plane is divided into a plurality of sections and the moving speed can be set for each section is desirable. Further, as the buff processing liquid flow rate, a large flow rate is good in order to maintain a sufficient distribution of the processing liquid in the wafer surface even when the wafer W and the buff head 500 are rotated at a high speed. On the other hand, however, an increase in the flow rate of the processing liquid leads to an increase in processing cost.

  Here, the buff processing includes at least one of buff polishing processing and buff cleaning processing.

  In the buff polishing process, the wafer W and the buff pad 502 are moved relative to each other while the buff pad 502 is brought into contact with the wafer W, and a polishing liquid such as a slurry is interposed between the wafer W and the buff pad 502 to thereby remove the wafer W. This is a process for polishing and removing the treated surface. In the buff polishing process, the physical action force applied to the wafer W by the roll sponge in the roll cleaning chamber 190 and the physical action force applied to the wafer W by the pen sponge in the pen cleaning chamber 192 are stronger than the physical action force. This process can be added to W. By the buffing treatment, it is possible to realize removal of the surface layer portion to which contaminants are attached, additional removal of portions that could not be removed by the main polishing in the polishing unit 3, or improvement of morphology after the main polishing.

  In the buff cleaning process, the wafer W and the buff pad 502 are moved relative to each other while the buff pad 502 is brought into contact with the wafer W, and a cleaning process liquid (chemical solution or chemical solution and pure water) is interposed between the wafer W and the buff pad 502. In this process, contaminants on the surface of the wafer W are removed or the processing surface is modified. In the buff cleaning process, the physical action force applied to the wafer W by the roll sponge in the roll cleaning chamber 190 and the physical action force applied to the wafer W by the pen sponge in the pen cleaning chamber 192 are stronger than the physical action force. This process can be added to W.

<Buff processing component>
<First Embodiment>
Next, details of the buff processing component 350 will be described. FIG. 5 is a diagram illustrating a schematic configuration of the buff processing component of the first embodiment. In addition, although the following description demonstrates the buff processing component in 300 A of upper side buff processing modules, it is not limited to this. That is, with respect to a processing component including a head to which a pad for performing a predetermined process on a processing target is attached by bringing the processing target into contact with the processing target and a arm for holding the head. The following embodiments can be applied.

  As shown in FIG. 5, the buff processing component 350 of the first embodiment includes a first buff arm 600-1 and a second buff arm 600-2 different from the first buff arm 600-1. Specifically, the first buff arm 600-1 extends along the wafer W installation surface of the buff table 400, and is attached to the wafer W installation surface of the buff table 400 with the shaft 610-1 outside the buff table 400 as a fulcrum. It is an arm that can rotate along. The second buff arm 600-2 extends along the wafer W installation surface of the buff table 400, and is rotatable along the wafer W installation surface of the buff table 400 with a shaft 610-2 outside the buff table 400 as a fulcrum. Arm.

  The buff processing component 350 includes a first buff head 500-1 to which a first buff pad 502-1 having a smaller diameter than the wafer W is attached. Further, the buff processing component 350 includes a second buff head 500-2 different from the first buff head 500-1 to which a second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 is attached.

  The first buff head 500-1 is held by the end 620-1 on the opposite side of the shaft 610-1 of the first buff arm 600-1. The second buff head 500-2 is held at the end 620-2 of the second buff arm 600-2 opposite to the shaft 610-2.

  The first buff arm 600-1 and the second buff arm 600-2 can move horizontally along the processing surface of the wafer W. For example, the first buff arm 600-1 can swing between the central portion and the peripheral portion of the wafer W while the first buff pad 502-1 is in contact with the wafer W when performing the buffing process. It has become. Further, the second buff arm 600-2 is capable of horizontal movement at the peripheral edge of the wafer W with the second buff pad 502-2 being in contact with the wafer W when performing the buffing process.

  Further, as shown in FIG. 5, the first buff arm 600-1 can move horizontally between the first dresser 820-1 and the wafer W in order to condition the first buff pad 502-1. Similarly, the second buff arm 600-2 can move horizontally between the second dresser 820-2 and the wafer W in order to condition the second buff pad 502-2.

  Here, as shown in FIG. 5, the first buff head 500-1 is held by the first buff arm 600-1 so that the first buff pad 502-1 is in contact with the center portion of the wafer W during horizontal movement. The second buff head 500-2 is held by the second buff arm 600-2 so that the second buff pad 502-2 contacts the peripheral edge of the wafer W during horizontal movement. Note that the types of horizontal motion include linear motion and arc motion. As the movement direction, for example, one-way movement from the center side of the wafer W to the peripheral portion or the opposite direction, or reciprocation within the range of the wafer radius or diameter starting from the wafer W center side or the peripheral portion side. Exercise. Further, the movement speed of each buff arm may be changeable within the movement range during horizontal movement. This is because the distribution of the residence time of the buff pad affects the distribution of the processing speed of the wafer W. As a method of changing the moving speed in this case, for example, a method in which the swing distance in the wafer W plane is divided into a plurality of sections and the moving speed can be set for each section is desirable.

The first buff pad 502-1 and the second buff pad 502-2 are smaller in diameter than the wafer W. For example, when the wafer W is Φ300 mm, the first buff pad 502-1 and the second buff pad 502-2 are preferably Φ100 mm or less, more preferably Φ60 to 100 mm. This is because the buffing speed of the wafer increases because the area ratio with the wafer decreases as the diameter of the buff pad increases. On the other hand, regarding the in-plane uniformity of the wafer W, the in-plane uniformity improves as the diameter of the buff pad decreases. This is because the unit processing area is reduced. Therefore, in the present embodiment, a second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 is employed in addition to the first buff pad 502-1. The types and materials of the first buff pad 502-1 and the second buff pad 502-2 do not have to be the same, and different ones may be arranged. Different types of the first dresser 820-1 and the second dresser 820-2 may be arranged depending on the type and material of each buff pad and the pad diameter.

  According to this embodiment, the buff processing component 350 can perform buff processing using a plurality of buff pads (first buff pad 502-1 and second buff pad 502-2). The buff processing component 350 can perform buff processing simultaneously with the first buff pad 502-1 and the second buff pad 502-2, for example. Further, the buff processing component 350 can perform the buff processing while the first buff pad 502-1 and the second buff pad 502-2 are alternately conditioned by the dressers 820-1 and 820-2. In any case, since the contact area between the buff pad and the wafer W when performing the buff processing is increased, the buff processing component 350 of this embodiment can improve the processing rate of the buff processing.

  In addition to this, according to the present embodiment, buff processing can be performed using buff pads (first buff pad 502-1 and second buff pad 502-2) having different sizes. Therefore, for example, the buff processing component 350 mainly buffs the region other than the peripheral portion of the wafer W with the first buff pad 502-1 and uses the second buff pad 502-2 having a smaller diameter than the first buff pad 502-1. The peripheral portion of the wafer W can be mainly buffed. As a result, according to the buff processing component 350 of the present embodiment, the in-plane uniformity of the wafer W can be improved.

Second Embodiment
Next, the buff processing component 350 of the second embodiment will be described. FIG. 6 is a diagram illustrating a schematic configuration of a buff processing component according to the second embodiment.

  As shown in FIG. 6, the buff processing component 350 of the second embodiment includes a first buff arm 600-1 and a second buff arm 600-2 different from the first buff arm 600-1. Specifically, the first buff arm 600-1 extends along the wafer W installation surface of the buff table 400, and is attached to the wafer W installation surface of the buff table 400 with the shaft 610-1 outside the buff table 400 as a fulcrum. It is an arm that can rotate along. The second buff arm 600-2 extends along the wafer W installation surface of the buff table 400, and is rotatable along the wafer W installation surface of the buff table 400 with a shaft 610-2 outside the buff table 400 as a fulcrum. Arm.

  The buff processing component 350 includes a first buff head 500-1 to which a first buff pad 502-1 having a smaller diameter than the wafer W is attached. In addition, the buff processing component 350 includes a plurality of second buff pads 502-2 and a plurality of second buff pads 502-3 each having a smaller diameter than the first buff pad 502-1 and different from the first buff head 500-1. A 2 buff head 500-2 and a third buff head 500-3 are provided.

The first buff head 500-1 is held by the end 620-1 on the opposite side of the shaft 610-1 of the first buff arm 600-1. The second buff head 500-2 and the third buff head 500-3 are held by the end 620-2 of the second buff arm 600-2 on the side opposite to the shaft 610-2.

  The first buff arm 600-1 and the second buff arm 600-2 can move horizontally along the processing surface of the wafer W. For example, the first buff arm 600-1 can move horizontally between the central portion and the peripheral portion of the wafer W while the first buff pad 502-1 is in contact with the wafer W when performing the buffing process. It has become. Further, the second buff arm 600-2 can move horizontally at the peripheral edge of the wafer W while the second buff pad 502-2 and the third buff pad 502-3 are in contact with the wafer W when performing the buffing process. It has become.

  Further, as shown in FIG. 6, the first buff arm 600-1 can move horizontally between the first dresser 820-1 and the wafer W in order to condition the first buff pad 502-1. Similarly, the second buff arm 600-2 is horizontally movable between the second dresser 820-2 and the wafer W in order to condition the second buff pad 502-2 and the third buff pad 502-3. .

  Here, as shown in FIG. 6, the first buff head 500-1 is held by the first buff arm 600-1 so that the first buff pad 502-1 is in contact with the center portion of the wafer W during horizontal movement. Further, the second buff head 500-2 and the third buff head 500-3 are arranged such that the second buff arm 600- is in contact with the peripheral edge of the wafer W during the horizontal movement. 2 is held.

  Further, the second buff head 500-2 and the third buff head 500-3 are in contact with the peripheral portion of the wafer W when the second buff pad 502-2 and the third buff pad 502-3 are adjacent to the peripheral direction of the wafer W and moved horizontally. Thus, the second buff arm 600-2 is held. Note that the types of horizontal motion include linear motion and arc motion. As the movement direction, for example, one-way movement from the center side of the wafer W to the peripheral portion or the opposite direction, or reciprocation within the range of the wafer radius or diameter starting from the wafer W center side or the peripheral portion side. Exercise. Further, the movement speed of each buff arm may be changeable within the movement range during horizontal movement. This is because the distribution of the residence time of the buff pad affects the distribution of the processing speed of the wafer W. As a method of changing the moving speed in this case, for example, a method in which the swing distance in the wafer W plane is divided into a plurality of sections and the moving speed can be set for each section is desirable.

  The first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3 are smaller in diameter than the wafer W. For example, when the wafer W is Φ300 mm, the first buff pad 502-1 is preferably Φ100 mm or less, more preferably Φ60 to 100 mm. This is because the buffing speed of the wafer increases because the area ratio with the wafer decreases as the diameter of the buff pad increases. On the other hand, regarding the in-plane uniformity of the wafer W, the in-plane uniformity improves as the diameter of the buff pad decreases. This is because the unit processing area is reduced. Therefore, in the present embodiment, in addition to the first buff pad 502-1, the second buff pad 502-2 and the third buff pad 502-3 having a smaller diameter than the first buff pad 502-1 are employed. In addition, the pad diameters of the second buff pad 502-2 and the third buff pad 502-3 may be equal, or in order to obtain in-plane uniformity of the processing speed to the outer periphery, the diameter of one of the buff pads is set to be equal. You may make it still smaller than the other. The types and materials of the first buff pad 502-1, the second buff pad 502-2, and the third buff pad are not necessarily the same, and different ones may be arranged. Different types of the first dresser 820-1 and the second dresser 820-2 may be arranged depending on the type and material of each buff pad and the pad diameter. In this case, unlike FIG. 6, each dresser is provided for each buff pad.

According to the present embodiment, the buff processing component 350 can perform buff processing using a plurality of buff pads (a first buff pad 502-1, a second buff pad 502-2, and a third buff pad 502-3). . The buff processing component 350 can perform the buff processing simultaneously with the first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3, for example. Further, the buff processing component 350 performs buff processing while conditioning the first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3 alternately by the dressers 820-1 and 820-2. It can also be done. In any case, since the contact area between the buff pad and the wafer W when performing the buff processing is increased, the buff processing component 350 of this embodiment can improve the processing rate of the buff processing.

  In addition, according to the present embodiment, the buff processing can be performed using the buff pads having different sizes (the first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3). . For this reason, for example, the buff processing component 350 mainly buffs the region other than the peripheral portion of the wafer W with the first buff pad 502-1 and the second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 and The peripheral portion of the wafer W can be mainly buffed by the third buff pad 502-3. As a result, according to the buff processing component 350 of the present embodiment, the in-plane uniformity of the wafer W can be improved. Furthermore, according to the present embodiment, buff processing can be performed at the peripheral portion of the wafer W using the second buff pad 502-2 and the third buff pad 502-3 that are adjacent to each other in the peripheral direction of the wafer W. The processing rate in the peripheral edge can be improved.

<Third Embodiment>
Next, the buff processing component 350 of the third embodiment will be described. FIG. 7 is a diagram illustrating a schematic configuration of a buff processing component according to the third embodiment.

  As shown in FIG. 7, the buff processing component 350 of the third embodiment includes a single buff arm 600. Specifically, the buff arm 600 extends along the wafer W installation surface of the buff table 400 and can rotate along the wafer W installation surface of the buff table 400 with a shaft 610 outside the buff table 400 as a fulcrum. It is an arm.

  The buff processing component 350 includes a first buff head 500-1 to which a first buff pad 502-1 having a smaller diameter than the wafer W is attached. Further, the buff processing component 350 includes a second buff head 500-2 different from the first buff head 500-1 to which a second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 is attached.

  The first buff head 500-1 and the second buff head 500-2 are held by the end 620 of the buff arm 600 opposite to the shaft 610.

  The buff arm 600 can move horizontally along the processing surface of the wafer W. For example, when performing the buffing process, the buff arm 600 is placed horizontally between the central portion and the peripheral portion of the wafer W with the first buff pad 502-1 and the second buff pad 502-2 being in contact with the wafer W. It is possible to exercise.

  Further, as shown in FIG. 7, the buff arm 600 can move horizontally between the dresser 820 and the wafer W in order to condition the first buff pad 502-1 and the second buff pad 502-2.

Here, the first buff head 500-1 and the second buff head 500-2 are held by the buff arm 600 so as to be adjacent along the horizontal movement direction of the buff arm 600. When the buff arm 600 performs the buff processing, the first buff pad 502-1 and the second buff pad 502 are used.
-2 is moved horizontally between the central portion and the peripheral portion of the wafer W with the wafer W in contact with the wafer W. As a result, the first buff head 500-1 is held by the buff arm 600 so that the first buff pad 502-1 is in contact with the central portion of the wafer W. The second buff head 500-2 is held by the buff arm 600 so that the second buff pad 502-2 is at least in contact with the peripheral edge of the wafer W. Note that the types of horizontal motion include linear motion and arc motion. As the movement direction, for example, one-way movement from the center side of the wafer W to the peripheral portion or the opposite direction, or reciprocation within the range of the wafer radius or diameter starting from the wafer W center side or the peripheral portion side. Exercise. Further, the movement speed of each buff arm may be changeable within the movement range during horizontal movement. This is because the distribution of the residence time of the buff pad affects the distribution of the processing speed of the wafer W. As a method of changing the moving speed in this case, for example, a method in which the swing distance in the wafer W plane is divided into a plurality of sections and the moving speed can be set for each section is desirable.

  The first buff pad 502-1 and the second buff pad 502-2 are smaller in diameter than the wafer W. For example, when the wafer W is Φ300 mm, the first buff pad 502-1 is preferably Φ100 mm or less, more preferably Φ60 to 100 mm. This is because the buffing speed of the wafer increases because the area ratio with the wafer decreases as the diameter of the buff pad increases. On the other hand, regarding the in-plane uniformity of the wafer W, the in-plane uniformity improves as the diameter of the buff pad decreases. This is because the unit processing area is reduced. Therefore, in the present embodiment, a second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 is employed in addition to the first buff pad 502-1. The types and materials of the first buff pad 502-1 and the second buff pad 502-2 do not have to be the same, and different ones may be arranged. Different types of dresser 820 may be arranged depending on the type and material of each buff pad and the pad diameter. In this case, unlike FIG. 7, each buff pad has each dresser.

  According to this embodiment, the buff processing component 350 can perform buff processing using a plurality of buff pads (first buff pad 502-1 and second buff pad 502-2). The buff processing component 350 can perform buff processing simultaneously with the first buff pad 502-1 and the second buff pad 502-2, for example. Therefore, since the contact area between the buff pad and the wafer W when performing the buff processing is increased, the buff processing component 350 can improve the processing rate of the buff processing.

  In addition to this, according to the present embodiment, buff processing can be performed using buff pads (first buff pad 502-1 and second buff pad 502-2) having different sizes. Therefore, for example, the buff processing component 350 mainly buffs the region other than the peripheral portion of the wafer W with the first buff pad 502-1 and uses the second buff pad 502-2 having a smaller diameter than the first buff pad 502-1. Regions other than the central portion of the wafer W, particularly the peripheral portion can be buffed. As a result, according to the buff processing component 350 of the present embodiment, the in-plane uniformity of the wafer W can be improved.

<Fourth embodiment>
Next, the buff processing component 350 of the fourth embodiment will be described. FIG. 8 is a diagram illustrating a schematic configuration of a buff processing component according to the fourth embodiment.

  As shown in FIG. 8, the buff processing component 350 of the fourth embodiment includes a single buff arm 600. Specifically, the buff arm 600 extends along the wafer W installation surface of the buff table 400 and can rotate along the wafer W installation surface of the buff table 400 with a shaft 610 outside the buff table 400 as a fulcrum. It is an arm.

  The buff processing component 350 includes a first buff head 500-1 to which a first buff pad 502-1 having a smaller diameter than the wafer W is attached. Further, the buff processing component 350 has a second buff head 500-2 different from the first buff head 500-1 to which a second buff pad 502-2 and a third buff pad 502-3 having a smaller diameter than the first buff pad 502-1 are attached. , A third buff head 500-3.

  The first buff head 500-1, the second buff head 500-2, and the third buff head 500-3 are held at the end 620 of the buff arm 600 opposite to the shaft 610.

  The buff arm 600 can move horizontally along the processing surface of the wafer W. For example, when the buff arm 600 performs the buffing process, the buff arm 600 is in a state where the first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3 are in contact with the wafer W. It is possible to move horizontally between the opposing peripheral portions of the wafer W through the portion.

  In addition, as shown in FIG. 8, the buff arm 600 is disposed between the dresser 820 and the wafer W in order to condition the first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3. Horizontal movement is possible.

  Here, the first buff head 500-1 is held at the center of the buff arm 600 in the swing direction. The second buff head 500-2 and the third buff head 500-3 are held by the buff arm 600 so as to be adjacent to both sides of the first buff head 500-1 along the horizontal movement direction of the buff arm 600. When performing the buffing process, the buff arm 600 is in a state in which the first buff pad 502-1 and the second buff pad 502-2 are in contact with the wafer W. Horizontal movement is possible between the peripheral edges facing each other. As a result, the first buff head 500-1 is held by the buff arm 600 so that the first buff pad 502-1 is in contact with the central portion of the wafer W. The second buff head 500-2 and the third buff head 500-3 are held by the buff arm 600 so that the second buff pad 502-2 and the third buff pad 502-3 are at least in contact with the peripheral portion of the wafer W. Note that the types of horizontal motion include linear motion and arc motion. As the movement direction, for example, one-way movement from the center side of the wafer W to the peripheral portion or the opposite direction, or reciprocation within the range of the wafer radius or diameter starting from the wafer W center side or the peripheral portion side. Exercise. Further, the movement speed of each buff arm may be changeable within the movement range during horizontal movement. This is because the distribution of the residence time of the buff pad affects the distribution of the processing speed of the wafer W. As a method of changing the moving speed in this case, for example, a method in which the swing distance in the wafer W plane is divided into a plurality of sections and the moving speed can be set for each section is desirable.

The first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3 are smaller in diameter than the wafer W. For example, when the wafer W is Φ300 mm, the first buff pad 502-1 is preferably Φ100 mm or less, more preferably Φ60 to 100 mm. This is because the buffing speed of the wafer increases because the area ratio with the wafer decreases as the diameter of the buff pad increases. On the other hand, regarding the in-plane uniformity of the wafer W, the in-plane uniformity improves as the diameter of the buff pad decreases. This is because the unit processing area is reduced. Therefore, in the present embodiment, in addition to the first buff pad 502-1, a second buff pad 502-2 and a third buff pad 502-3 having a smaller diameter than the first buff pad 502-1 are employed. In addition, the pad diameters of the second buff pad 502-2 and the third buff pad 502-3 may be equal, or in order to obtain in-plane uniformity of the processing speed to the outer periphery, the diameter of either one of the buff pads is set to You may make it still smaller than the other. The types and materials of the first buff pad 502-1, the second buff pad 502-2, and the third buff pad are not necessarily the same, and different ones may be arranged. Different types of dresser 820 may be arranged depending on the type and material of each buff pad and the pad diameter. In this case, unlike FIG. 8, each dresser is provided for each buff pad.

  According to the present embodiment, the buff processing component 350 can perform buff processing using a plurality of buff pads (a first buff pad 502-1, a second buff pad 502-2, and a third buff pad 502-3). . The buff processing component 350 can perform the buff processing simultaneously with the first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3, for example. Therefore, since the contact area between the buff pad and the wafer W when performing the buff processing is increased, the buff processing component 350 of the present embodiment can improve the processing rate of the buff processing.

  In addition, according to the present embodiment, the buff processing can be performed using the buff pads having different sizes (the first buff pad 502-1, the second buff pad 502-2, and the third buff pad 502-3). . For this reason, for example, the buff processing component 350 mainly buffs the region other than the peripheral portion of the wafer W with the first buff pad 502-1 and the second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 and The peripheral portion of the wafer W can be mainly buffed by the third buff pad 502-3. As a result, according to the buff processing component 350 of the present embodiment, the in-plane uniformity of the wafer W can be improved. Further, according to the present embodiment, the second buff pad 502-2 and the third buff pad 502-3 are arranged on both sides of the first buff pad 502-1 along the swinging direction of the buff arm 600. As a result, since the buff processing can be performed on the peripheral portion of the wafer W using the second buff pad 502-2 and the third buff pad 502-3, the processing rate at the peripheral portion can be improved.

<Fifth Embodiment>
Next, the buff processing component 350 of the fifth embodiment will be described. FIG. 9 is a diagram illustrating a schematic configuration of a buff processing component according to the fifth embodiment.

  As shown in FIG. 9, the buff processing component 350 of the fifth embodiment includes a first buff arm 600-1 and a second buff arm 600-2 connected to the first buff arm 600-1. Specifically, the first buff arm 600-1 extends along the wafer W installation surface of the buff table 400, and is attached to the wafer W installation surface of the buff table 400 with the shaft 610-1 outside the buff table 400 as a fulcrum. It is an arm that can rotate along. The second buff arm 600-2 extends along the wafer W installation surface of the buff table 400, and the shaft provided at the end 620-1 on the opposite side of the shaft 610-1 of the first buff arm 600-1. The arm is rotatable along the wafer W installation surface of the buff table 400 with 610-2 as a fulcrum.

  The buff processing component 350 includes a first buff head 500-1 to which a first buff pad 502-1 having a smaller diameter than the wafer W is attached. Further, the buff processing component 350 includes a second buff head 500-2 different from the first buff head 500-1 to which a second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 is attached.

  The first buff head 500-1 is held by the end 620 of the first buff arm 600-1 opposite to the shaft 610-1. The second buff head 500-2 is held at the end 620-2 of the second buff arm 600-2 opposite to the shaft 610-2.

The first buff arm 600-1 and the second buff arm 600-2 can move horizontally along the processing surface of the wafer W. For example, the first buff arm 600-1 can move horizontally between the central portion and the peripheral portion of the wafer W while the first buff pad 502-1 is in contact with the wafer W when performing the buffing process. It has become. Further, the second buff arm 600-2 is capable of horizontal movement at least at the peripheral portion of the wafer W in a state where the second buff pad 502-2 is in contact with the wafer W when performing the buffing process.

  In addition, as shown in FIG. 9, the first buff arm 600-1 can move horizontally between the dresser 820 and the wafer W in order to condition the first buff pad 502-1 and the second buff pad 502-2. ing.

  Here, as shown in FIG. 9, the first buff head 500-1 is held by the first buff arm 600-1 so that the first buff pad 502-1 is in contact with the central portion of the wafer W during horizontal movement. The second buff head 500-2 is held by the second buff arm 600-2 so that the second buff pad 502-2 contacts the peripheral edge of the wafer W during horizontal movement. Note that the types of horizontal motion include linear motion and arc motion. As the movement direction, for example, one-way movement from the center side of the wafer W to the peripheral portion or the opposite direction, or reciprocation within the range of the wafer radius or diameter starting from the wafer W center side or the peripheral portion side. Exercise. Further, the movement speed of each buff arm may be changeable within the movement range during horizontal movement. This is because the distribution of the residence time of the buff pad affects the distribution of the processing speed of the wafer W. As a method of changing the moving speed in this case, for example, a method in which the swing distance in the wafer W plane is divided into a plurality of sections and the moving speed can be set for each section is desirable.

  The first buff pad 502-1 and the second buff pad 502-2 are smaller in diameter than the wafer W. For example, when the wafer W is Φ300 mm, the first buff pad 502-1 is preferably Φ100 mm or less, more preferably Φ60 to 100 mm. This is because the buffing speed of the wafer increases because the area ratio with the wafer decreases as the diameter of the buff pad increases. On the other hand, regarding the in-plane uniformity of the wafer W, the in-plane uniformity improves as the diameter of the buff pad decreases. This is because the unit processing area is reduced. Therefore, in the present embodiment, a second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 is employed in addition to the first buff pad 502-1. The types and materials of the first buff pad 502-1 and the second buff pad 502-2 do not have to be the same, and different ones may be arranged. Different types of dresser 820 may be arranged depending on the type and material of each buff pad and the pad diameter. In this case, unlike FIG. 9, each dresser is provided for each buff pad.

  According to this embodiment, the buff processing component 350 can perform buff processing using a plurality of buff pads (first buff pad 502-1 and second buff pad 502-2). The buff processing component 350 can perform buff processing simultaneously with the first buff pad 502-1 and the second buff pad 502-2, for example. Therefore, since the contact area between the buff pad and the wafer W when performing the buff processing is increased, the buff processing component 350 of the present embodiment can improve the processing rate of the buff processing.

  In addition to this, according to the present embodiment, buff processing can be performed using buff pads (first buff pad 502-1 and second buff pad 502-2) having different sizes. For this reason, for example, the buff processing component 350 mainly buffs the region other than the peripheral portion of the wafer W with the first buff pad 502-1 and the second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 and The peripheral portion of the wafer W can be mainly buffed by the third buff pad 502-3. As a result, according to the buff processing component 350 of the present embodiment, the in-plane uniformity of the wafer W can be improved.

<Sixth Embodiment>
Next, the buff processing component 350 of the sixth embodiment will be described. FIG. 10 is a diagram illustrating a schematic configuration of a buff processing component according to the sixth embodiment.

  As shown in FIG. 10, the buff processing component 350 of the sixth embodiment includes a first buff arm 600-1 and a second buff arm 600-2 different from the first buff arm 600-1. Specifically, the first buff arm 600-1 extends along the wafer W installation surface of the buff table 400, and is attached to the wafer W installation surface of the buff table 400 with the shaft 610-1 outside the buff table 400 as a fulcrum. It is an arm that can rotate along. The second buff arm 600-2 extends along the wafer W installation surface of the buff table 400, and is rotatable along the wafer W installation surface of the buff table 400 with a shaft 610-2 outside the buff table 400 as a fulcrum. Arm.

  The buff processing component 350 includes a first buff head 500-1 to which a first buff pad 502-1 having a smaller diameter than the wafer W is attached. Further, the buff processing component 350 includes a second buff head 500-2 different from the first buff head 500-1 to which a second buff pad 502-2 having a smaller diameter than the wafer W is attached.

  The first buff head 500-1 is held by the end 620-1 on the opposite side of the shaft 610-1 of the first buff arm 600-1. The second buff head 500-2 is held at the end 620-2 of the second buff arm 600-2 opposite to the shaft 610-2.

  The first buff arm 600-1 and the second buff arm 600-2 can move horizontally along the processing surface of the wafer W. For example, the first buff arm 600-1 can move horizontally between the central portion and the peripheral portion of the wafer W while the first buff pad 502-1 is in contact with the wafer W when performing the buffing process. It has become. Further, the second buff arm 600-2 can move horizontally between the central portion and the peripheral portion of the wafer W while the second buff pad 502-2 is in contact with the wafer W when performing the buffing process. It has become.

  Further, as shown in FIG. 10, the first buff arm 600-1 can move horizontally between the first dresser 820-1 and the wafer W in order to condition the first buff pad 502-1. Similarly, the second buff arm 600-2 can move horizontally between the second dresser 820-2 and the wafer W in order to condition the second buff pad 502-2. Note that the types of horizontal motion include linear motion and arc motion. As the movement direction, for example, one-way movement from the center side of the wafer W to the peripheral portion or the opposite direction, or reciprocation within the range of the wafer radius or diameter starting from the wafer W center side or the peripheral portion side. Exercise. Further, the movement speed of each buff arm may be changeable within the movement range during horizontal movement. This is because the distribution of the residence time of the buff pad affects the distribution of the processing speed of the wafer W. As a method of changing the moving speed in this case, for example, a method in which the swing distance in the wafer W plane is divided into a plurality of sections and the moving speed can be set for each section is desirable.

  The first buff pad 502-1 and the second buff pad 502-2 are smaller in diameter than the wafer W. For example, when the wafer W is Φ300 mm, the first buff pad 502-1 and the second buff pad 502-2 are preferably Φ100 mm or less, more preferably Φ60 to 100 mm. This is because the buffing speed of the wafer increases because the area ratio with the wafer decreases as the diameter of the buff pad increases. The types and materials of the first buff pad 502-1 and the second buff pad 502-2 do not have to be the same, and different ones may be arranged. Different types of the first dresser 820-1 and the second dresser 820-2 may be arranged depending on the type and material of each buff pad and the pad diameter.

According to this embodiment, the buff processing component 350 can perform buff processing using a plurality of buff pads (first buff pad 502-1 and second buff pad 502-2). The buff processing component 350 can perform buff processing simultaneously with the first buff pad 502-1 and the second buff pad 502-2, for example. Further, the buff processing component 350 can perform the buff processing while the first buff pad 502-1 and the second buff pad 502-2 are alternately conditioned by the dressers 820-1 and 820-2. In any case, since the contact area between the buff pad and the wafer W when performing the buff processing is increased, the buff processing component 350 of this embodiment can improve the processing rate of the buff processing.

<Seventh embodiment>
Next, the buff processing component 350 of the seventh embodiment will be described. FIG. 11 is a diagram illustrating a schematic configuration of a buff processing component according to the seventh embodiment.

  As shown in FIG. 11, the buff processing component 350 of the seventh embodiment includes a single buff arm 600. Specifically, the buff arm 600 is an arm that can rotate about a shaft 610 outside the buff table 400 and extends along the wafer W installation surface of the buff table 400.

  The buff processing component 350 includes a first buff head 500-1 to which a first buff pad 502-1 having a smaller diameter than the wafer W is attached. Further, the buff processing component 350 includes a second buff head 500-2 different from the first buff head 500-1 to which a second buff pad 502-2 having a smaller diameter than the wafer W is attached.

  The first buff head 500-1 and the second buff head 500-2 are held by the end 620 of the buff arm 600 opposite to the shaft 610.

  The buff arm 600 can move horizontally along the processing surface of the wafer W. For example, when performing the buffing process, the buff arm 600 is placed horizontally between the central portion and the peripheral portion of the wafer W with the first buff pad 502-1 and the second buff pad 502-2 being in contact with the wafer W. It is possible to exercise.

  In addition, as shown in FIG. 11, the buff arm 600 can move horizontally between the dressers 820-1 and 820-2 and the wafer W in order to condition the first buff pad 502-1 and the second buff pad 502-2. It has become.

  The first buff head 500-1 and the second buff head 500-2 are held by the buff arm 600 so as to be adjacent along the swinging direction of the buff arm 600. When performing the buffing process, the buff arm 600 moves horizontally between the central portion and the peripheral portion of the wafer W while the first buff pad 502-1 and the second buff pad 502-2 are in contact with the wafer W. . Note that the types of horizontal motion include linear motion and arc motion. As the movement direction, for example, one-way movement from the center side of the wafer W to the peripheral portion or the opposite direction, or reciprocation within the range of the wafer radius or diameter starting from the wafer W center side or the peripheral portion side. Exercise. Further, the movement speed of each buff arm may be changeable within the movement range during horizontal movement. This is because the distribution of the residence time of the buff pad affects the distribution of the processing speed of the wafer W. As a method of changing the moving speed in this case, for example, a method in which the swing distance in the wafer W plane is divided into a plurality of sections and the moving speed can be set for each section is desirable.

The first buff pad 502-1 and the second buff pad 502-2 are smaller in diameter than the wafer W. For example, when the wafer W is Φ300 mm, the first buff pad 502-1 and the second buff pad 502-2 are preferably Φ100 mm or less, more preferably Φ60 to 100 mm. This is because the buffing speed of the wafer increases because the area ratio with the wafer decreases as the diameter of the buff pad increases. The types and materials of the first buff pad 502-1 and the second buff pad 502-2 do not have to be the same, and different ones may be arranged. Different types of the first dresser 820-1 and the second dresser 820-2 may be arranged depending on the type and material of each buff pad and the pad diameter. In FIG. 11, the dresser is divided into a first dresser 820-1 and a dresser 820-2, but one identical dresser may be used.

  According to this embodiment, the buff processing component 350 can perform buff processing using a plurality of buff pads (first buff pad 502-1 and second buff pad 502-2). The buff processing component 350 can perform buff processing simultaneously with the first buff pad 502-1 and the second buff pad 502-2, for example. Therefore, since the contact area between the buff pad and the wafer W when performing the buff processing is increased, the buff processing component 350 of the present embodiment can improve the processing rate of the buff processing.

<Processing method>
Next, the processing method of this embodiment will be described. FIG. 12 is a flowchart of the processing method of this embodiment. 12, the first buff pad 502-1 and the second buff pad 502-2 perform buff processing on the wafer W at the same timing as in the embodiments of FIGS. 7, 8, 9, and 11, and conditioning is performed at the same timing. It is an example of the processing method in embodiment to perform. In the case of the configuration of FIG. 8, the third buff pad 502-3 performs the same process as the second buff pad 502-2.

  In the processing method of the present embodiment, first, the buff processing component 350 performs a predetermined first processing (buff processing) on the wafer W by bringing the first buff pad 502-1 into contact with the wafer W and causing relative movement. At the same time, the second buff pad 502-2 having a diameter smaller than that of the first buff pad 502-1 is brought into contact with the wafer W and relatively moved to perform a predetermined second process (buff process) on the wafer W (step S101). Here, the first process of step S101 is performed by bringing the first buff pad 502-1 into contact with an area (for example, the central part) of the wafer W other than the area to be processed by the second buff pad 502-2, and performing a relative motion. Is done. Further, the second process is performed by bringing the second buff pad 502-2 into contact with a region (for example, a peripheral portion) other than the region of the wafer W that is processed by the first buff pad 502-1 and performing a relative motion. In the present embodiment, an example is shown in which the processing region of the first buff pad 502-1 and the processing region of the second buff pad 502-2 are separated. However, the present invention is not limited to this, and the buff processing component 350 has the first buff pad component 502-1. The processing region of the buff pad 502-1 and the processing region of the second buff pad 502-2 are not clearly drawn, and they may be partially overlapped for buffing.

  Subsequently, the buff processing component 350 turns the buff arm 600 or the buff arms 600-1 and 2 to condition the first buff pad 502-1 and the second buff pad 502-2 (step S102).

Subsequently, the buff processing component 350 determines whether or not to end the process (step S103). For example, when the buff processing component 350 determines that the processing should be continued on the same wafer W, or when it is determined that the processing is to be continued after the subsequent wafer W is transferred (Step S103, No), it returns to step S101 and continues the process. On the other hand, when the buff processing component 350 determines that the process should be terminated (step S103, Yes), the process is terminated. An example of determining whether or not to continue processing on the same wafer W is performed as follows. That is, the upper processing module 300A can include a Wet-ITM (In-line Thickness Monitor). The Wet-ITM detects (measures) the film thickness distribution (or distribution of information related to the film thickness) of the wafer W by moving the entire surface of the wafer with the detection head in a non-contact state on the wafer. be able to. As for ITM, Wet-ITM is effective for measurement during processing, but is mounted on the upper processing module 300A for acquiring film thickness after processing other than that or a signal corresponding to the film thickness. There is no necessity. The ITM may be mounted outside the processing module, for example, in the load / unload unit, and the measurement may be performed when the wafer is taken in or out of the FOUP or the like. This is the same in the following embodiments. In addition to the above-mentioned Wet-ITM and ITM, a means for detecting (measuring) the film thickness distribution (or signal distribution corresponding to the film thickness) of the surface of the wafer W being processed is not shown. However, an eddy current sensor and an optical sensor may be used. The eddy current sensor can be used when the surface to be processed is a conductive material, and is disposed to face the surface to be processed of the wafer W. The eddy current sensor generates a eddy current in the wafer W by causing a high-frequency current to flow through a sensor coil disposed in the vicinity of the processing surface of the wafer W, and generates an eddy current corresponding to the thickness of the processing region of the wafer W. This is a sensor that detects a film thickness of the wafer W or a signal distribution corresponding to the film thickness based on a change in impedance. The optical sensor is disposed so as to face the processing surface of the wafer W. The optical sensor can be used when the surface to be processed is made of a material that can transmit light. The optical sensor irradiates light toward the surface to be processed of the wafer W and reflects it on the surface to be processed of the wafer W or transmits the wafer W This is a sensor that receives reflected light that is reflected thereafter and detects the film thickness distribution of the wafer W based on the received light. The upper processing module 300A can include a database in which the target film thickness of the polishing surface of the wafer W or a signal distribution corresponding to the target film thickness is preset and stored. The buff processing component 350 includes a distribution of signals corresponding to the film thickness or film thickness of the processing surface detected by Wet-ITM, ITM, eddy current sensor or optical sensor, and the target film thickness or target film stored in the database. Based on the difference between the signal distribution corresponding to the thickness and whether or not the same wafer W should be processed, it can be determined. For example, the buff processing component 350 can determine that the processing should be continued for the same wafer W when the difference is larger than a preset threshold value.

  Next, another example of the processing method of this embodiment will be described. FIG. 13 is a flowchart of the processing method of this embodiment. FIG. 13 shows an embodiment in which the first buff pad 502-1 and the second buff pad 502-2 perform buff processing on the wafer W at different timings and conditioning is performed at different timings in the embodiments of FIGS. It is an example of a processing method. In the case of the configuration of FIG. 6, the third buff pad 502-3 performs the same process as the second buff pad 502-2.

  First, the buff processing component 350 performs a predetermined first process (buff process) on the wafer W by bringing the first buff pad 502-1 into contact with the wafer W and making a relative movement thereof (step S201). Here, the first process of step S201 is executed by bringing the first buff pad 502-1 into contact with an area (for example, the central part) of the wafer W other than the area to be processed by the second buff pad 502-2 and performing a relative motion. Is done.

  In addition, at the same timing as step S201, the buff processing component 350 performs conditioning of the second buff pad 502-2 (step S202).

Subsequently, the buff processing component 350 rotates the buff arm 600-2 so that the second buff pad 502-2 having a diameter smaller than that of the first buff pad 502-1 is brought into contact with the wafer W to be moved relative to the wafer W. Then, a predetermined second process (buff process) is performed (step S203). Here, the second processing is executed by bringing the second buff pad 502-2 into contact with a region (for example, a peripheral portion) other than the region to be processed by the first buff pad 502-1 and making the relative movement. In the present embodiment, an example is shown in which the processing region of the first buff pad 502-1 and the processing region of the second buff pad 502-2 are separated. However, the present invention is not limited to this, and the buff processing component 350 has the first buff pad component 502-1. The processing region of the buff pad 502-1 and the processing region of the second buff pad 502-2 are not clearly drawn, and they may be partially overlapped for buffing.

  In addition, at the same timing as step S203, the buff processing component 350 turns the buff arm 600-1 to condition the first buff pad 502-1 (step S204).

  Subsequently, the buff processing component 350 determines whether or not to end the process (step S205). For example, when the buff processing component 350 determines that the processing should be continued on the same wafer W, or when it is determined that the processing should be continued after the subsequent wafer W is transferred (step S205, No), it returns to step S201 and continues the process. On the other hand, if the buff processing component 350 determines that the processing should be ended (step S205, Yes), the processing ends. Note that the determination as to whether or not to continue processing on the same wafer W is performed in the same manner as described above, and thus detailed description thereof is omitted.

  Next, another example of the processing method of this embodiment will be described. FIG. 14 is a flowchart of the processing method of this embodiment. FIG. 14 shows an embodiment in which the first buff pad 502-1 and the second buff pad 502-2 perform the buffing process on the wafer W at the same timing and the conditioning is performed at the same timing in the embodiment of FIGS. It is an example of a processing method. In the case of the configuration of FIG. 6, the third buff pad 502-3 performs the same process as the second buff pad 502-2.

  First, the buff processing component 350 performs a predetermined first process (buff process) on the wafer W by bringing the first buff pad 502-1 into contact with the wafer W and making a relative movement thereof (step S301). Here, the first process of step S301 is performed by bringing the first buff pad 502-1 into contact with an area (for example, the central part) of the wafer W other than the area to be processed by the second buff pad 502-2 and performing a relative motion. Is done.

  Further, at the same timing as step S301, the buff processing component 350 makes a predetermined movement with respect to the wafer W by bringing the second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 into contact with the wafer W and making a relative motion. A second process (buff process) is performed (step S302). Here, the second processing is executed by bringing the second buff pad 502-2 into contact with a region (for example, a peripheral portion) other than the region to be processed by the first buff pad 502-1 and making the relative movement. In the present embodiment, an example is shown in which the processing region of the first buff pad 502-1 and the processing region of the second buff pad 502-2 are separated. However, the present invention is not limited to this, and the buff processing component 350 has the first buff pad component 502-1. The processing region of the buff pad 502-1 and the processing region of the second buff pad 502-2 are not clearly drawn, and they may be partially overlapped for buffing.

  Subsequently, the buff processing component 350 turns the buff arm 600-2 to condition the second buff pad 502-2 (step S303).

  At the same timing as step S303, the buff processing component 350 turns the buff arm 600-1 to condition the first buff pad 502-1 (step S304).

Subsequently, the buff processing component 350 determines whether or not to end the process (step S305). For example, when the buff processing component 350 determines that the processing should be continued on the same wafer W, or when it is determined that the processing is to be continued after the subsequent wafer W is transferred (Step S305, No), it returns to step S301 and continues the process. On the other hand, if the buff processing component 350 determines that the process should be terminated (step S305, Yes), the process is terminated. Note that the determination as to whether or not to continue processing on the same wafer W is performed in the same manner as described above, and thus detailed description thereof is omitted.

  Next, another example of the processing method of this embodiment will be described. FIG. 15 is a flowchart of the processing method of this embodiment. FIG. 15 shows that the two buff arms 600-1 and 600-2 are not linked in the embodiment of FIGS. 5, 6 and 10, and the first buff pad 502-1 and the second buff pad 502-2 are buffed at a unique timing. 2 is an example of a processing method in an embodiment in which conditioning processing is performed. In the case of the configuration of FIG. 6, the third buff pad 502-3 performs the same process as the second buff pad 502-2.

  First, the buff processing component 350 performs a predetermined first process (buff process) on the wafer W by bringing the first buff pad 502-1 into contact with the wafer W and making a relative movement thereof (step S401). Here, the first process of step S401 is executed by bringing the first buff pad 502-1 into contact with an area (for example, the central part) of the wafer W other than the area to be processed by the second buff pad 502-2, and performing a relative motion. Is done.

  Subsequently, the buff processing component 350 makes a predetermined second process (buff process) on the wafer W by causing the second buff pad 502-2 having a smaller diameter than the first buff pad 502-1 to contact the wafer W and relatively move. (Step S402). Here, the second processing is executed by bringing the second buff pad 502-2 into contact with a region (for example, a peripheral portion) other than the region to be processed by the first buff pad 502-1 and making the relative movement. In the present embodiment, an example is shown in which the processing region of the first buff pad 502-1 and the processing region of the second buff pad 502-2 are separated. However, the present invention is not limited to this, and the buff processing component 350 has the first buff pad component 502-1. The processing region of the buff pad 502-1 and the processing region of the second buff pad 502-2 are not clearly drawn, and they may be partially overlapped for buffing. As described above, the first process and the second process are started at different timings.

  Subsequently, the buff processing component 350 turns the buff arm 600-1 to condition the first buff pad 502-1 (step S403).

  Subsequently, the buff processing component 350 turns the buff arm 600-2 to condition the second buff pad 502-2 (step S404). As described above, the conditioning of the first buff pad 502-1 and the conditioning of the second buff pad 502-2 are started at different timings.

  Subsequently, the buff processing component 350 determines whether or not to end the process (step S405). For example, when the buff processing component 350 determines that the processing should be continued on the same wafer W, or when it is determined that the processing should be continued after the subsequent wafer W is transferred (Step S405). No), it returns to step S401 and continues the process. On the other hand, if the buff processing component 350 determines that the processing should be ended (step S405, Yes), the processing ends. Note that the determination as to whether or not to continue processing on the same wafer W is performed in the same manner as described above, and thus detailed description thereof is omitted. The order of steps S401 to S404 described above is an example. When the two buff arms 600-1 and 600-2 are not linked and the first buff pad 502-1 and the second buff pad 502-2 are subjected to buff processing and conditioning processing at a unique timing, the above-described steps S401 to S404 are performed. Can be done in any order.

According to the processing method of the present embodiment, the contact area between the buff pad and the wafer W when performing the buffing process is increased, so that the processing rate of the buffing process can be improved. In addition, according to the processing method of the present embodiment, buff pads having different sizes (first buff pads 502-1).
In addition, the buff processing can be performed using the second buff pad 502-2). Therefore, for example, the buff processing component 350 mainly buffs the region other than the peripheral portion of the wafer W with the first buff pad 502-1 and uses the second buff pad 502-2 having a smaller diameter than the first buff pad 502-1. The peripheral portion of the wafer W can be mainly buffed. As a result, according to the processing method of this embodiment, the in-plane uniformity of the processing speed of the wafer W can be improved.

300A Upper buff processing module 300B Lower buff processing module 350 Buff processing component 400 Buff table 500 Buff head 500-1 First buff head 500-2 Second buff head 502 Buff pad 502-1 First buff pad 502-2 Second buff pad 502-3 First 3 buff pad 600 buff arm 600-1 first buff arm 600-2 second buff arm 610, 610-1, 610-2 shaft 620 end 810 dress table 820, 820-1, 820-2 dresser W wafer

Claims (21)

A head to which a pad for performing a predetermined process on the processing object is attached by making a relative movement in contact with the processing object;
An arm for holding the head;
With
The head includes a first head to which a first pad having a smaller diameter than the processing object is attached, and a second head different from the first head to which a second pad having a smaller diameter than the first pad is attached; including,
Processing component. A processing module comprising the processing component of claim 1.
The arm includes a first arm and a second arm different from the first arm,
The first head is held by the first arm;
The second head is held by the second arm;
Processing module. The processing module of claim 2,
The second head is held by the second arm so that the second pad is in contact with the peripheral edge of the processing object.
Processing module. The processing module of claim 3,
A plurality of second heads to which the plurality of second pads are respectively attached;
The plurality of second heads are held by the second arm such that the plurality of second pads are adjacent to a peripheral portion of the processing object and are in contact with a peripheral portion of the processing object.
Processing module. A processing module comprising the processing component of claim 1.
The arm comprises a single arm;
The first head and the second head are held by the single arm;
Processing module. The processing module of claim 5,
The second head is held by the single arm so that the second pad is in contact with at least a peripheral edge of the processing object.
Processing module. The processing module of claim 6,
The first head and the second head are held by the single arm so as to be adjacent along the swinging direction of the single arm.
Processing module. The processing module of claim 7,
A plurality of second heads to which the plurality of second pads are respectively attached;
The first head is held by the single arm;
The plurality of second heads are held by the single arm so as to be adjacent to both sides of the first head along the swinging direction of the single arm.
Processing module. A processing module comprising the processing component of claim 1.
The arm includes a first arm and a second arm connected to the first arm,
The first head is held by the first arm;
The second head is held by the second arm;
Processing module. The processing component of claim 1;
In a processing module comprising a table for holding the processing object,
By supplying a processing liquid to the processing object, rotating the table and the head, bringing the first and second pads into contact with the processing object simultaneously or alternately, and swinging the arm, Processing objects to be processed,
Processing module. The processing module according to any one of claims 2 to 10,
The processing module is a buff processing module for performing buff processing on the processing object.
Processing module. The processing module of claims 2-11,
When the pad includes a plurality of pads, at least one pad type or material is different from other pad types or materials;
Processing module. The processing module of claims 2-11,
A plurality of dressers for conditioning the pad;
Processing module. The processing module of claim 13,
The diameter, type, or material of at least one of the plurality of dressers is different from the diameter, type, or material of other dressers.
Processing module. A predetermined first process is performed on the processing object by bringing the first pad having a diameter smaller than that of the processing object into contact with the processing object and causing the relative movement.
Performing a predetermined second process on the processing object by bringing a second pad having a diameter smaller than that of the first pad into contact with the processing object and causing a relative movement thereof;
A processing method. The processing method according to claim 15, wherein
The second process is performed by bringing the second pad into contact with the peripheral edge of the processing object and performing a relative motion.
Processing method. The processing method according to claim 15 or 16, further comprising:
Conditioning the first pad by bringing the first pad into contact with a dresser and making a relative movement;
Conditioning the second pad by bringing the second pad into contact with a dresser and making a relative movement;
Processing method. The processing method of claim 17,
The first process and the second process are performed simultaneously,
Conditioning of the first pad and conditioning of the second pad are performed simultaneously.
Processing method. The processing method of claim 17,
During the first process, the conditioning of the second pad is performed simultaneously,
Conditioning of the first pad is performed simultaneously during the second process.
Processing method. The processing method of claim 17,
The first process and the second process are started at different timings,
Conditioning of the first pad and conditioning of the second pad are started at different timings,
Processing method. In the processing method of any one of Claims 15-20,
The first process and the second process are:
A table for holding the processing object;
A plurality of heads to which the first pad and the second pad are attached;
In a processing module comprising one or more arms for holding the plurality of heads,
By supplying a treatment liquid to the treatment object, rotating the table and the head, bringing the first pad and the second pad into contact with the treatment object simultaneously or alternately, and swinging the arm, Executed,
Processing method.

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