JP2019186338A - Semiconductor device - Google Patents

Abstract

A semiconductor device having a so-called half-mold structure in which generation of resin burrs is suppressed is realized. A heat sink having a first surface, a second surface, and a side surface, a semiconductor element, a lead frame, and a molding resin are provided on the first surface, and a part of the other surface is partially molded resin. In a semiconductor device having a half-mold structure exposed from the side, a second region 10cb is provided in a region of the side surface 10c on the side of the other surface 10b while the frame-shaped projection 13 is provided on the other surface 10b. Thereby, when the molding resin 60 is molded, the collision energy of the molding resin material on the other surface 10b side of the side surface 10c is reduced, and the adhesion between the projection 13 and the mold is increased. Among them, a semiconductor device is provided in which the generation of resin burrs in a region inside the projection 13 is suppressed. [Selection diagram] Fig. 1

Description

  The present invention relates to a semiconductor device having a so-called half mold structure.

  Conventionally, this type of semiconductor device includes a heat sink, a semiconductor element mounted on one side of the heat sink, a lead frame, wires that electrically connect the lead frame and the semiconductor element, and a mold resin that covers them. With. And the other surface on the opposite side to one surface among the heat sinks is exposed from the mold resin.

  In this type of semiconductor device, when molding the mold resin, the mold resin material is disposed between the other surface of the heat sink exposed from the mold resin (hereinafter referred to as “exposed surface”) and the mold used for molding the mold resin. May cause resin burrs. When the resin burrs are generated, problems such as deterioration of the appearance and deterioration of mountability due to solder repelling at the portions where the resin burrs are generated occur. Therefore, an extra step for removing the resin burrs is required.

  As a method for suppressing the occurrence of this resin burr, for example, the one described in Patent Document 1 can be mentioned. The invention described in Patent Document 1 uses a heat radiating plate having a convex portion on the surface serving as an exposed surface, and sets a pressing pin for pressing the heat radiating plate from the opposite side of the exposed surface in a mold for molding resin molding. Mold resin molding is performed. As a result, in the molding resin molding, the convex part is pressed against the mold and plastically deformed to closely contact the mold, and the mold resin material is prevented from entering the gap between the convex part and the mold. Generation of burrs is suppressed.

JP-A-11-150216

  The above resin burrs are generated when the mold resin material injected into the mold flows toward the side surface connecting one surface and the other surface of the heat sink and enters the gap between the other surface of the heat sink and the mold. . That is, the resin burr on the other side is more likely to occur as the impact energy of the mold resin material on the side surface is larger.

  In the invention described in Patent Document 1, since the side surface of the heat radiating plate is flat, the collision energy due to the molding resin material is large in the portion of the side surface on the other surface side where the convex portion is formed. It is a structure that is difficult to reduce energy. In addition, the invention described in Patent Document 1 is based on a premise that the convex portion is plastically deformed so that the entire convex portion is bent by pressing in molding resin molding, and a resin burr may be generated depending on how the bent portion is bent. .

  The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor device having a structure in which generation of resin burrs on the other surface side exposed from the mold resin in the heat sink is suppressed.

  In order to achieve the above object, the semiconductor device according to claim 1 includes one surface (10a) and the other surface (10b) that are in a front / back relationship, and a side surface (10c) that is a surface between the one surface and the other surface. , A semiconductor element (30) mounted on one surface via a bonding material (20), a lead frame (40) electrically connected to the semiconductor element, a heat sink, and the semiconductor element And a mold resin (60) covering the lead frame. In such a configuration, the heat sink has a projection 13 formed in a frame shape on the other surface when viewed from the normal direction to the other surface, and a part of the region inside the projection is molded. The protrusion is exposed from the resin, and the protrusion is disposed inside the outer surface of the other surface as viewed from the normal direction, and the direction connecting the one surface and the other surface is the thickness direction, and the other of the side surfaces A partial region on the surface side is a narrowed portion (10cb) having a narrower width in the thickness direction than the remaining portion of the side surface.

  As a result, the other surface side of the side surface of the heat sink is a narrowed portion, and the collision energy due to the mold resin material applied from the side to the protrusion is reduced in the molding resin forming process. In addition, the protrusions are pressed against the mold used to form the mold resin, and these gaps are closed. Therefore, resin burrs are generated when the mold resin material enters the inner region of the protrusions on the other surface. The semiconductor device is suppressed.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows an example of a corresponding relationship with the specific means as described in embodiment mentioned later.

It is a figure which shows the cross-sectional structure of the semiconductor device of 1st Embodiment, Comprising: It is a schematic sectional drawing which shows the cross section between II in FIG. FIG. 4 is a schematic cross-sectional view illustrating a cross-sectional configuration of the semiconductor device of the first embodiment and illustrating a cross-section taken along II-II in FIG. 3. 1 is a schematic plan view showing a semiconductor device according to a first embodiment. It is a schematic plan view which shows a mode that the heat sink in the semiconductor device of 1st Embodiment was seen from the other surface side. It is a schematic diagram which shows the flow of the mold resin material in the formation process of the mold resin in the conventional semiconductor device. It is a figure which shows the state following FIG. 5A, Comprising: It is a schematic diagram which shows the collision to the heat sink of mold resin material, and its energy. It is a schematic diagram which shows the flow of the mold resin material in the formation process of the mold resin in the semiconductor device of 1st Embodiment. It is a figure which shows the state following FIG. 5C, Comprising: It is a schematic diagram which shows the collision to the heat sink of mold resin material, and its energy. It is a schematic sectional drawing which shows generation | occurrence | production of the solder ball at the time of mounting the conventional semiconductor device using the heat sink in which the protrusion part is not formed in another member. It is a schematic sectional drawing which shows a mode that the semiconductor device of 1st Embodiment is mounted in another member. It is a schematic sectional drawing which shows the cross-sectional shape of the projection part of the heat sink which comprises the semiconductor device of 2nd Embodiment. It is a schematic diagram which shows an example which the protrusion part of the heat sink concerning the semiconductor device of 2nd Embodiment contact | abuts to a mold die. It is a heat sink concerning the semiconductor device of 2nd Embodiment, Comprising: It is a schematic diagram which shows an example which the projection part made into another shape contact | abuts to a mold die. It is a heat sink concerning the semiconductor device of 2nd Embodiment, Comprising: It is a schematic diagram which shows an example which the projection part made into another shape contact | abuts to a mold die. It is a heat sink concerning the semiconductor device of 2nd Embodiment, Comprising: It is a schematic diagram which shows an example which the projection part made into another shape contact | abuts to a mold die. It is a schematic sectional drawing which shows the cross-sectional structure of the semiconductor device of 3rd Embodiment. It is a schematic plan view which shows a mode that the heat sink in the semiconductor device of 3rd Embodiment was seen from the other surface side. It is a schematic sectional drawing which shows the cross-sectional structure of the semiconductor device of other embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, portions that are the same or equal to each other will be described with the same reference numerals.

(First embodiment)
The semiconductor device according to the first embodiment will be described with reference to FIGS. The semiconductor device of this embodiment is mounted on a vehicle such as an automobile, and can be applied as a device for driving various electronic devices for the vehicle.

  In FIG. 1, a wire 50 to be described later arranged in another cross section is indicated by a broken line for easy understanding of the configuration. In FIG. 3, the number of leads 41 of the lead frame 40, which will be described later, is reduced and shown deformed, and the outer shape of the mold resin 60 when viewed from above is indicated by a two-dot chain line. In FIG. 4, in order to facilitate understanding of the arrangement of the protrusions 13 to be described later, a cross section is not shown, but hatching is performed.

  As shown in FIG. 1, the semiconductor device of the present embodiment includes a heat sink 10 having one surface 10 a and another surface 10 b that are in a front-back relationship, a bonding material 20, a semiconductor element 30, a lead frame 40, and wires 50. And a mold resin 60. In this semiconductor device, as shown in FIG. 1, a part of the other surface 10 b of the heat sink 10 opposite to the one surface 10 a on which the semiconductor element 30 is mounted is exposed from the mold resin 60. Has been.

  As shown in FIG. 1, the heat sink 10 has a plate shape including one surface 10a, the other surface 10b, and a side surface 10c that is a surface between the one surface 10a and the other surface 10b, such as a copper-based metal or an iron-based metal. It is comprised by the metal material of this. In the heat sink 10, the semiconductor element 30 is mounted on the one surface 10 a via the bonding material 20.

  As shown in FIG. 2, the heat sink 10 has a support portion 12 formed on one surface 10 a. As shown in FIG. 1, the heat sink 10 has a protrusion 13 formed on the other surface 10b. As shown in FIG. 1, the side surface 10 c of the heat sink 10 is formed in at least two regions, that is, the region on the one surface 10 a and the region on the other surface 10 b side by forming the protruding partition 11 in the present embodiment. It is partitioned.

  Hereinafter, for simplification of description, a direction connecting the one surface 10a and the other surface 10b is referred to as a “thickness direction”. Further, as shown in FIG. 1, a region on the one surface 10 a side of the side surface 10 c of the heat sink 10 is also referred to as a “first region 10 ca”, and a region on the other surface 10 b side is also referred to as a “first region”. Two regions 10cb ".

  As shown in FIG. 1, the heat sink 10 has a shape in which the width in the thickness direction of the second region 10cb is smaller than that of the first region 10ca. That is, since the second region 10cb has a narrower width in the thickness direction than the first region 10ca, the second region 10cb can also be referred to as a “constricted portion 10cb”. The second region 10cb is formed in order to mitigate the collision energy applied to the protrusions 13 by the mold resin material in the molding resin 60 forming step described later. Details of this will be described later.

  The partition part 11 is provided in order to make the side surface 10c have at least the narrowed part 10cb, and in this embodiment, as shown in FIG. The partition portion 11 is formed on all side surfaces 10 c and has a closed ring shape surrounding the heat sink 10. In other words, it can be said that the same closed ring-shaped second region 10cb is formed by the closed ring-shaped partitioning portion 11. The partition part 11 should just be able to partition the side surface 10c and to have the 2nd area | region 10cb, and about the shape, it is arbitrary.

  As shown in FIG. 2, the support portion 12 is a convex portion formed on the one surface 10 a side of the heat sink 10, and the fitting portion 42 of the lead frame 40 is fitted therein to support the fitting portion 42. Is. Specifically, in the forming process of the mold resin 60, the support unit 12 transmits a mold matching force of a mold (hereinafter referred to as “mold mold”) used to form the mold resin 60 to the protrusion 13. Thus, the fitting portion 42 is supported. For example, as shown in FIG. 2, two support portions 12 are formed. It is only necessary that the fitting portions 42 can be supported by caulking or the like, and the number, shape, and the like are appropriately changed.

  For example, as shown in FIG. 1, the protruding portion 13 protrudes in a normal direction with respect to the other surface 10 b (hereinafter referred to as “other surface normal direction”). In the present embodiment, the protrusion 13 has a rectangular shape in a cross-sectional view. ing. As shown in FIG. 4, the protrusion 13 is a frame-like protrusion as viewed from the normal direction of the other surface, and is disposed at an inner position away from the outline of the other surface 10 b. The protrusion 13 is a region where the mold resin material constituting the mold resin 60 is surrounded by the protrusion 13 in the other surface 10b (hereinafter referred to as “protrusion inner region”) in the molding resin 60 forming process described later. This prevents the resin burr from being formed.

  Specifically, the protrusion 13 is pressed against a mold die, which will be described later, in the molding resin 60 forming step, and the gap between the protrusion 13 and the mold die is closed by this pressing, so that the protrusion inner side. It plays a role of suppressing the mold resin material from entering the region.

  For example, the protrusion 13 has a height in the normal direction of the other surface of 15 μm and a width in the direction perpendicular to the normal direction of the other surface of 100 μm. However, the height and width are appropriately changed. May be. Moreover, the protrusion part 13 should just be made into the extent which the protrusion inner side area | region which is a part used for the solder joint to another member does not have a trouble in joining, and about distance with the outline of the other surface 10b, it is arbitrary. is there.

  The bonding material 20 is used for mounting the semiconductor element 30 on the heat sink 10 and is made of, for example, a conductive adhesive such as solder or silver paste.

  The semiconductor element 30 is mainly composed of a semiconductor material such as silicon, and is, for example, a power element such as a MOS transistor or IGBT (insulated gate bipolar transistor), a diode, and the like, and is manufactured by a normal semiconductor process. The semiconductor element 30 has an electrode (not shown) formed on the opposite surface of the bonding material 20 and is electrically connected to the lead 41 of the lead frame 40 via the wire 50 as shown in FIG.

  The lead frame 40 is made of, for example, a metal material such as copper-based metal or iron-based metal, and includes a plurality of leads 41 and fitting portions 42 as shown in FIG. 3, and is a semiconductor as viewed from the normal direction to the one surface 10a. It arrange | positions so that the element 30 may be surrounded. The lead frame 40 is connected to a plurality of adjacent leads 41 by a tie bar (not shown) until the molding resin 60 is formed. However, after the molding resin 60 is formed, a plurality of tie bars are removed by press punching or the like. The lead 41 is separated.

  As shown in FIG. 1, some of the leads 41 are inner leads that are sealed with the mold resin 60, and the remaining portions are outer leads that are exposed from the mold resin 60.

  For example, as shown in FIG. 2, the fitting portion 42 has a through hole 42 a into which the support portion 12 is fitted, and is fixed to the heat sink 10 by being inserted and caulked. For example, as shown in FIG. 2, the fitting portion 42 is connected to two adjacent leads 41 in a top view. Before the molding resin 60 is molded, the fitting portion 42 is connected to another lead 41 by a tie bar (not shown) via the two connected leads 41. After the molding resin 60 is molded, the tie bar is stamped or the like. It is separated from other leads 41 by being removed by.

  As shown in FIG. 2, the fitting portion 42 is an exposed portion 42 b in which one end side opposite to the semiconductor element 30 is exposed from the mold resin 60. The exposed portion 42b is a portion to which a mold matching force is applied in the molding resin 60 forming process. The fitting part 42 is a part that plays a role of transmitting the force to the heat sink 10 connected by the support part 12 by applying a force from the mold to the exposed part 42b. May be referred to as "means".

  As shown in FIG. 3, the fitting portion 42 may be connected to the wire 50 and electrically connected to the semiconductor element 30 via the wire 50. In this case, for example, the fitting portion 42 is also used as a ground. .

  As shown in FIG. 1, the wire 50 electrically connects the semiconductor element 30 and the lead 41, and is made of, for example, gold, silver, aluminum, or the like. The wires 50 are connected to the semiconductor element 30 and the leads 41, for example, by wire bonding.

  The mold resin 60 is made of, for example, a thermosetting resin such as an epoxy resin, and covers a part of the heat sink 10, a part of the semiconductor element 30, the lead frame 40, and the wire 50 as shown in FIG. 1.

  The above is the basic configuration of the semiconductor device of this embodiment.

  Next, an example of a method for manufacturing the semiconductor device of this embodiment will be described. However, since the semiconductor device of the present embodiment can employ a known manufacturing process except for the use of the heat sink 10 including the support portion 12, the protrusion portion 13, and the second region 10 cb, it will be briefly described here. To do.

  First, the heat sink 10 provided with the support part 12, the projection part 13, and the 2nd area | region 10cb, and the semiconductor element 30 are prepared. Then, the semiconductor element 30 is mounted on the one surface 10a of the heat sink 10 via a bonding material 20 such as solder.

  Subsequently, a lead frame 40 having a plurality of leads 41 and a fitting portion 42 and connecting them with a tie bar is prepared. Then, the heat sink 10 and the lead frame 40 are connected by fitting and fitting the fitting portion 42 of the lead frame 40 to the support portion 12 of the heat sink 10. Thereafter, the semiconductor element 30 and each of the plurality of leads 41 are electrically connected to each other through the wire 50 by wire bonding or the like, and a work to be set in a mold is formed.

  Then, a mold mold having a cavity for forming the mold resin 60 and comprising, for example, an upper mold and a lower mold is prepared. In this mold die, for example, the upper die and the lower die sandwich the portion of the lead frame 40 including the tie bar, and the upper die and the portion of the fitting portion 42 that becomes the exposed portion 42b come into contact with each other. The part 42b is configured to be subjected to a mold matching force.

  Thereafter, the work is set in a mold, a mold resin material is injected into the cavity, and the mold resin 60 is formed by heating and curing. At this time, when the mold matching force concentrates on the protrusion 13, the mold is brought into close contact with the lower mold, the gap between the protrusion 13 and the lower mold is closed, and the mold resin material passes over the protrusion 13 and enters the protrusion inside. Entering the area is suppressed. As a result, at least a part of the protrusion inner region of the heat sink 10 is exposed from the mold resin.

  After forming the mold resin 60, the work is released from the mold, and the tie bar is cut and removed by press punching or the like.

  The semiconductor device of this embodiment can be manufactured by the manufacturing method as described above. In addition, said manufacturing method is an example to the last, and another well-known manufacturing process may be employ | adopted.

  Next, the effect of the second region 10cb formed on the side surface 10c will be described with reference to FIGS. 5A to 5D.

  5A to 5D, only a part of the heat sink 10 including the protrusion 13 and the second region 10cb and a part adjacent to the part of the mold 100 are shown, and other parts are omitted. Yes. 5B and 5D, the collision energy due to the molding resin material 60a is indicated by a white arrow for convenience, and the magnitude of the collision energy is expressed by the size of a white arrow.

  First, the collision energy caused by the mold resin material 60a in the conventional semiconductor device having the heat sink 70 in which the protrusion 71 is formed on the one surface 70a and the region corresponding to the second region 10cb is not formed on the side surface 70b will be described.

  In the conventional semiconductor device, in the molding resin 60 forming process, as shown in FIG. 5A, the mold resin material 60 a flows from the side surface 70 b in a state where the projection 71 is pressed against the mold 100. At this time, as shown in FIG. 5A, in the conventional semiconductor device, the side surface 70b of the heat sink 70 is flat, and the front opening width L1 into which the mold resin material 60a can flow toward the side surface 70b is large.

  In other words, the conventional semiconductor device has a structure in which a large amount of the mold resin material 60a collides with the side surface 70b in the molding resin 60 forming process. Then, as shown in FIG. 5B, the mold resin material 60a collides with the side surface 70b. Since the amount of collision is large as described above, the collision energy applied to the side surface 70b is large.

  On the other hand, as shown in FIG. 5A, the gap width L2 in the protrusion 71, that is, the gap between the mold 100 and the one surface 70a is smaller than the gap width L1, and therefore the amount of the mold resin material 60a that collides with the protrusion 71. Will be less.

  However, since the collision energy in the region adjacent to one surface 70a of the side surface 70b is large, the mold resin is applied to the protrusion 71 in a state in which the momentum of the flow linearly toward the protrusion 71 of the mold resin material 60a cannot be suppressed. This results in the material 60a colliding. Therefore, the impact energy of the mold resin material 60a applied to the protrusion 71 is relatively large, and the mold resin material 60a can enter beyond the protrusion 71 to form a resin burr.

  On the other hand, in the semiconductor device of the present embodiment, as shown in FIG. 5C, a part of the side surface 10c of the heat sink 10 is a second region 10cb having a narrow width in the thickness direction. Therefore, as shown in FIG. 5C, when the frontage widths of the entire side surface 10c, the second region 10cb, and the protrusion 13 are L3, L4, and L5, L3> L4> L5.

  In other words, the heat sink 10 has a configuration in which the frontage width is gradually reduced toward the side surface 10c, the second region 10cb, and the protruding portion 13, that is, a configuration in which the amount of the mold resin material 60a flowing in is reduced stepwise. Yes. Therefore, as shown in FIG. 5D, the collision energy due to the mold resin material 60a is also reduced stepwise, and the collision energy of the mold resin material 60a applied to the protrusion 13 is relatively reduced as compared with the conventional structure. . Therefore, the molding resin material 60a is prevented from exceeding the protrusion 71, and the occurrence of resin burrs is suppressed.

  According to the present embodiment, the region on the other surface 10b side of the side surface 10c of the heat sink 10 is set as the second region 10cb, so that the collision energy of the mold resin material 60a in the protrusion 13 is reduced. In addition, since the frame-shaped protrusion 13 is formed on the other surface 10b, the pressure of mold mold matching is applied to the protrusion 13 during the molding of the mold resin 60, and the protrusion 13 and the mold It becomes the structure where adhesion with is increased. Due to these actions, a semiconductor device in which the molding resin material enters the inner region of the protrusion 13 in the other surface 10b and the occurrence of resin burrs is suppressed is obtained.

  In addition, the semiconductor device of this embodiment is also expected to have an effect of suppressing the generation of so-called solder balls caused by the molten solder splashing from the joint portion when soldered to another member. .

  Specifically, as shown in FIG. 6A, a case where a semiconductor device using a heat sink 80 in which the protruding portion 13 is not formed is soldered to another member 90 including a land 91 will be considered. Examples of the other member 90 include a wiring board in which a wiring (not shown) made of copper or the like and a land 91 are formed on the surface of a board made of glass epoxy resin or the like.

  For example, as shown in FIG. 6A, when a semiconductor device including the heat sink 80 is solder-bonded to another member 90, since the joint surface of the heat sink 80 is flat, soldering is performed between the joint surface of the heat sink 80 and the land 91. May protrude. At this time, if a part of the solder is separated from the joint portion, as shown in FIG. 6A, a spherical solder, so-called solder ball 92 is generated, which causes a problem such as conduction in an unintended portion.

  As a cause of such solder protrusion, for example, the amount of solder used for joining is large, or the standoff becomes small due to dimensional variation of the outer leads, etc., so that the gap between the joining surface and the land 91 is narrowed. And so on.

  On the other hand, in the semiconductor device of the present embodiment, since the protrusion 13 is formed on the other surface 10b of the heat sink 10, when soldering to another member 90, as shown in FIG. 13 plays a role of suppressing the protrusion of solder. For this reason, even if the solder is likely to protrude due to the above-described factors, the protrusion 13 suppresses the solder protruding and suppresses the generation of solder balls. Thus, the semiconductor device of this embodiment is also expected to have an effect of suppressing the generation of solder balls when mounted on another member 90.

(Second Embodiment)
The semiconductor device according to the second embodiment will be described with reference to FIGS. 7A to 7E. 7A to 7E show a part of the region including the protrusion 13 of the heat sink 10 and omit other parts.

  As shown in FIG. 7A, the semiconductor device of this embodiment is the first embodiment in that the protrusion 13 has a shape in which the width of the tip portion 13a is smaller than the width of the root portion 13b in a sectional view. It differs from the form. In the present embodiment, this difference will be mainly described.

  In the present embodiment, as shown in FIG. 7A, the protrusion 13 has a shape in which the width of the tip portion 13a is smaller than the width of the root portion 13b, that is, the pressure applied to the tip portion 13a during molding of the mold resin 60 is as described above. The shape is larger than that of the first embodiment. This further increases the pressure applied to the tip end portion 13a, thereby bringing the tip end portion 13a and the mold mold into closer contact, and the mold resin material passes over the projection portion 13 and enters the inner region of the projection portion, thereby generating a resin burr. This is to prevent this.

  Specifically, the protrusion 13 has a shape with a sharp tip 13a before molding of the mold resin 60, but is a result of plastic deformation due to pressure applied to the tip 13a during molding of the mold resin 60. The surface is formed on the tip portion 13a side. In other words, it can be said that, in the present embodiment, the protruding portion 13 has a shape that is partially plastically deformed, that is, a shape in which only the tip portion 13a is plastically deformed. That is, while maintaining the shape before pressing to the mold without plastic deformation of the portion different from the tip portion 13a, while suppressing the occurrence of an unintended gap between the protrusion 13 and the mold, The tip portion 13a is plastically deformed to close the gap between the projection 13 and the mold. Therefore, the mold resin material can be prevented from entering the inner region of the protrusion, and the occurrence of resin burrs can be prevented.

  For example, as shown in FIG. 7B, the protruding portion 13 has a pointed central portion in the width direction of the root portion 13 b of the protruding portion 13 in the distal end portion 13 a before molding resin molding. However, the protrusion 13 only needs to have a shape with a sharp tip portion 13a before molding the mold resin, and as shown in FIG. 7C, the protrusion portion inner region side of the tip portion 13a may be sharp. As shown in FIG. 7D, the opposite side of the protrusion inner region of the tip portion 13a may be sharp. Moreover, as shown to FIG. 7E, the protrusion part 13 may be made into the shape where a width | variety becomes narrow as it goes to the front-end | tip part 13a from the root part 13b.

  Since the tip portion 13a has a sharp shape, the pressed area is narrower and the pressure is relatively higher than when the cross-sectional shape of the protruding portion 13 is a rectangular shape. The effect of stabilizing the contact of the protrusion 13 can be expected. Further, the protrusion 13 may have a width larger than a predetermined width in order to suppress the entire protrusion 13 from being plastically deformed and to prevent the occurrence of resin burrs due to the plastic deformation. The protrusion 13 is not limited to the above example, and the shape may be changed as appropriate.

According to the present embodiment, since the protruding portion 13 has a shape in which the contact with the mold is stable, in addition to the effects of the first embodiment, Become.
(Third embodiment)
A semiconductor device according to the third embodiment will be described with reference to FIGS. In FIG. 8, the cross section corresponding to FIG. 1 is shown, and the wire 50 in another cross section is shown by a broken line. In FIG. 9, in order to make the arrangement of the protrusions 13 easy to understand, a cross section is not shown, but hatching is performed.

  As shown in FIG. 8, the semiconductor device of the present embodiment has a groove portion in a region inside the protrusion portion on the other surface 10 b of the heat sink 10 and adjacent to the protrusion portion 13 (hereinafter referred to as “protrusion portion adjacent region”). 14 is different from the first embodiment in that 14 is formed. In the present embodiment, this difference will be mainly described.

  The groove portion 14 is formed to receive the mold resin material in the region adjacent to the protrusion and prevent further entry even if the mold resin material enters the protrusion inner region during molding of the mold resin 60. For example, as shown in FIG. 9, the groove 14 extends along the protrusion 13 in the adjacent area of the protrusion as viewed from the normal direction of the other surface.

  For example, as shown in FIG. 8, the groove portion 14 is a V-shaped groove in a cross-sectional view. However, the groove portion 14 only needs to be able to store a mold resin material, and the cross-sectional shape, depth, width, number, and the like are appropriately changed. May be. Further, as shown in FIG. 8, the groove 14 may be formed without a gap from the protrusion 13 in the width direction of the protrusion 13, or may be formed with a gap from the protrusion 13.

  According to the present embodiment, in addition to the effects of the first embodiment, since the mold resin material has a shape that remains in the groove portion 14 even if the mold resin material enters the inner region of the projection portion, the resin burr can be minimized. The semiconductor device is excellent in mountability to the member.

(Other embodiments)
The semiconductor device described in each of the above embodiments is an example of the semiconductor device of the present invention, and is not limited to each of the above embodiments, but within the scope described in the claims. Can be changed as appropriate.

  (1) For example, in the said 3rd Embodiment, although the groove part 14 was formed in the protrusion inner side area | region, the groove part 14 was also formed in the outer area | region of the protrusion part 13 among the other surfaces 10b, ie, a protrusion outer area | region. A similar groove may be formed. As a result, a groove for storing the mold resin material is formed also in the outer region of the protrusion, so that the entry of the mold resin material into the inner region of the protrusion is suppressed, and a semiconductor device in which the generation of resin burrs is further suppressed is obtained. .

  (2) In the first embodiment, the example in which the region on the other surface 10b side of the side surface 10c is the narrowed portion 10cb (second region 10cb) by forming the projecting partition portion 11 has been described. . However, the side surface 10c having the narrowed portion 10cb may be used. For example, as shown in FIG. 10, the side surface 10c may be defined by providing a step on the side surface 10c, and the narrowed portion 10cb may be formed. In this case, the cross-sectional shape of the step portion is arbitrary.

  Further, in the case where the stepped portion shown in FIG. 10 is provided on the side surface 10c, the partition portion 11 may be further formed, or the side surface 10c may be further partitioned into three or more regions by the step or the partition portion 11. Good. In this case, the region closest to the other surface 10b in the side surface 10c only needs to be the narrowed portion 10cb.

  (3) The structure may be a combination of the above-described first embodiments as appropriate. For example, the structure may be a combination of the first embodiment and the third embodiment, or the second embodiment and the third embodiment. Also good.

10 Heat sink 10cb 2nd area | region (constriction part)
13 Projection 14 Groove 20 Bonding Material 30 Semiconductor Element 40 Lead Frame 50 Wire 60 Mold Resin

Claims (3)

A heat sink (10) having one surface (10a) and the other surface (10b) in a front-back relationship, and a side surface (10c) that is a surface between the one surface and the other surface;
A semiconductor element (30) mounted on the one surface via a bonding material (20);
A lead frame (40) electrically connected to the semiconductor element;
A mold resin (60) covering the heat sink, the semiconductor element, and the lead frame;
The heat sink has a frame-like projection 13 formed on the other surface when viewed from the normal direction to the other surface, and at least a part of the inner region of the projection is the mold. Exposed from the resin,
The protrusion is disposed inside the outer surface of the other surface when viewed from the normal direction,
The direction connecting the one surface and the other surface is the thickness direction,
The side surface is divided into at least two regions, and a part of the side surface on the other surface side is a narrowed portion (10cb) having a narrower width in the thickness direction than the remaining portion of the side surface. A semiconductor device.   2. The semiconductor device according to claim 1, wherein the protruding portion has a shape in which a width of a tip end portion (13 a) of the protruding portion is smaller than a width of a root portion (13 b).   The heat sink has a groove (14) extending along the protrusion when viewed from the normal direction in an area inside the protrusion on the other surface and adjacent to the protrusion. The semiconductor device according to claim 1, wherein the semiconductor device is formed.

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