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JP2019158631A - Current sensor correction method and current sensor - Google Patents

Current sensor correction method and current sensor Download PDF

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JP2019158631A
JP2019158631A JP2018046416A JP2018046416A JP2019158631A JP 2019158631 A JP2019158631 A JP 2019158631A JP 2018046416 A JP2018046416 A JP 2018046416A JP 2018046416 A JP2018046416 A JP 2018046416A JP 2019158631 A JP2019158631 A JP 2019158631A
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current
phase
correction
output voltage
interference
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雄二朗 冨田
Yujiro Tomita
雄二朗 冨田
二口 尚樹
Naoki Futakuchi
尚樹 二口
健 奥山
Takeshi Okuyama
健 奥山
潤 梅津
Jun Umezu
潤 梅津
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Proterial Ltd
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Hitachi Metals Ltd
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Abstract

To provide a current sensor correction method and a current sensor capable of accurately performing linear correction and interference correction.SOLUTION: The system includes a first shield board 41 and a second shield board 42 consisting of magnetic materials arranged so that three busbars 2 into which a current of each phase in a three-phase alternating current flows, and three busbars 2 may be collectively put in the thickness direction; three magnetic detection elements 3 which detect an intensity of a magnetic field occurring according to a current which flows through the busbar 2 arranged respectively and corresponding between each of the busbars 2 and the first shield board 41, and an output voltage of the three magnetic detection elements 3 is measured, and alignment correction of the output voltage and interference correction are carried out using an alignment correction factor and interference correction factor which derives the alignment correction factor and the interference correction factor based on the measurement result concerned in a state in which a current is sent on condition of the current ratio that is the correction method of the preparation having a current sensor 1 and is not included in the three busbars 2 at the time of flowing the current ratio and the three-phase alternating current.SELECTED DRAWING: Figure 3

Description

本発明は、磁気検出素子を用いた電流センサの補正方法及び電流センサに関する。   The present invention relates to a current sensor correction method using a magnetic detection element and a current sensor.

従来、電流センサとして、測定対象となる電流により発生する磁界の強度を検出する磁気検出素子を備えたものが知られている(例えば、特許文献1参照)。磁気検出素子により磁界の強度を検出することで、その磁界の強度を基に、電流を演算により求めることが可能である。   2. Description of the Related Art Conventionally, a current sensor is known that includes a magnetic detection element that detects the intensity of a magnetic field generated by a current to be measured (see, for example, Patent Document 1). By detecting the strength of the magnetic field by the magnetic detection element, the current can be obtained by calculation based on the strength of the magnetic field.

GMR(Giant Magneto Resistive effect)素子等の磁気検出素子では、バスバを流れる電流(バスバ電流という)に対する磁気検出素子の出力電圧の関係が線形とならず、特にバスバ電流が大きい領域においてはその傾向が顕著となる。そのため、バスバ電流に対して線形となるように、磁気検出素子の出力電圧を補正する線形補正が行われている。   In a magnetic detection element such as a GMR (Giant Magneto Resistive effect) element, the relationship of the output voltage of the magnetic detection element to the current flowing through the bus bar (referred to as the bus bar current) is not linear, and this tendency is particularly pronounced in a region where the bus bar current is large. Become prominent. Therefore, linear correction for correcting the output voltage of the magnetic detection element is performed so as to be linear with respect to the bus bar current.

特開2015−78872号公報JP2015-78872A

上述の線形補正は、通常、単相通電時の測定結果を基に行われる。しかし、三相交流における各相の電流が流れる3本のバスバを、厚さ方向に一括して挟み込むようにシールド板を設けた電流センサにおいては、単相通電時と、実際に使用される三相通電時において、シールド板での磁界の状態が大きく異なるため、補正が適正になされない場合があった。   The above-described linear correction is normally performed based on the measurement result at the time of single-phase energization. However, in a current sensor in which a shield plate is provided so that three bus bars through which current of each phase in three-phase alternating current flows are collectively sandwiched in the thickness direction, the three sensors that are actually used are At the time of phase energization, the state of the magnetic field on the shield plate is greatly different, so that correction may not be made properly.

特許文献1では、周囲の電流の影響を考慮して電流検出値を補正する干渉補正について記載されているが、干渉補正と線形補正の両方を行う点について記載されていない。そのため、干渉補正と線形補正の両方を精度よく行うことが可能な電流センサの補正方法が望まれる。   Patent Document 1 describes interference correction that corrects a current detection value in consideration of the influence of ambient current, but does not describe that both interference correction and linear correction are performed. Therefore, a current sensor correction method capable of accurately performing both interference correction and linear correction is desired.

そこで、本発明は、線形補正及び干渉補正を精度よく行うことが可能な電流センサの補正方法及び電流センサを提供することを目的とする。   Therefore, an object of the present invention is to provide a current sensor correction method and a current sensor capable of accurately performing linear correction and interference correction.

本発明は、上記課題を解決することを目的として、板状に形成されると共に、その板幅方向に離間して整列配置されており、三相交流における各相の電流が流れる3本のバスバと、前記3本のバスバを、前記板幅方向と垂直な厚さ方向に一括して挟み込むように配置されている磁性材料からなる第1シールド板及び第2シールド板と、前記各バスバと前記第1シールド板との間にそれぞれ配置され、対応する前記バスバを流れる電流により発生する磁界の強度を検出する3つの磁気検出素子と、を備えた電流センサの補正方法であって、前記3本のバスバに三相交流時の電流比、及び三相交流時に含まれない電流比の条件で電流を流した状態で、前記3つの磁気検出素子の出力電圧を測定し、当該測定結果を基に線形補正係数及び干渉補正係数を導出し、導出した線形補正係数及び干渉補正係数を用いて、前記出力電圧の線形補正及び干渉補正を行う、電流センサの補正方法を提供する。   In order to solve the above-mentioned problems, the present invention is formed in a plate shape and is arranged in a spaced manner in the width direction of the plate so that three bus bars through which a current of each phase in a three-phase alternating current flows. A first shield plate and a second shield plate made of a magnetic material arranged so as to sandwich the three bus bars in a thickness direction perpendicular to the plate width direction, the bus bars, A current sensor correction method comprising: three magnetic detection elements, each of which is arranged between each of the first shield plates and detects the intensity of a magnetic field generated by a current flowing through the corresponding bus bar, Measure the output voltage of the three magnetic sensing elements in a state where current flows to the bus bar under the conditions of the current ratio during three-phase alternating current and the current ratio not included during three-phase alternating current, and based on the measurement results Linear correction coefficient and interference correction unit Derives, using the derived linear correction coefficient and interference correction coefficient, performs linear correction and interference correction of the output voltage, to provide a method of correcting the current sensor.

また、本発明は、上記課題を解決することを目的として、板状に形成されると共に、その板幅方向に離間して整列配置されており、三相交流における各相の電流が流れる3本のバスバと、前記3本のバスバを、前記板幅方向と垂直な厚さ方向に一括して挟み込むように配置されている磁性材料からなる第1シールド板及び第2シールド板と、前記各バスバと前記第1シールド板との間にそれぞれ配置され、対応する前記バスバを流れる電流により発生する磁界の強度を検出する3つの磁気検出素子と、前記3つの磁気検出素子の出力電圧を補正する補正部と、を備え、前記補正部は、前記3本のバスバに三相交流時の電流比、及び三相交流時に含まれない電流比の条件で電流を流した状態で、前記3つの磁気検出素子の出力電圧を測定した結果を基に導出した線形補正係数及び干渉補正係数を用い、前記出力電圧の線形補正及び干渉補正を行う、電流センサを提供する。   Further, in order to solve the above-mentioned problems, the present invention is formed in a plate shape and is arranged in a spaced manner in the width direction of the plate so that three phase currents flow in a three-phase alternating current. A first shield plate and a second shield plate made of a magnetic material arranged so as to sandwich the three bus bars in a thickness direction perpendicular to the plate width direction, and each bus bar. And the first shield plate, respectively, and three magnetic detection elements for detecting the strength of the magnetic field generated by the current flowing through the corresponding bus bar, and the correction for correcting the output voltage of the three magnetic detection elements The correction unit is configured to detect the three magnetic sensors in a state where a current is passed through the three bus bars under a condition of a current ratio during three-phase alternating current and a current ratio not included during three-phase alternating current. The result of measuring the output voltage of the device Using the linear correction coefficient and interference correction coefficient derived on the basis of, performs linear correction and interference correction of the output voltage, to provide a current sensor.

本発明によれば、線形補正及び干渉補正を精度よく行うことが可能な電流センサの補正方法及び電流センサを提供できる。   According to the present invention, it is possible to provide a current sensor correction method and a current sensor capable of accurately performing linear correction and interference correction.

本発明の一実施の形態に係る電流センサを示す図であり、(a)は斜視図、(b)はそのA−A線断面図である。It is a figure which shows the current sensor which concerns on one embodiment of this invention, (a) is a perspective view, (b) is the sectional view on the AA line. (a)は三相交流の各相の電流の時間変化を示すグラフ図、(b)はV相の電流のみを流した場合のシールド板内の磁束密度を模式的に示す図、(c)は三相全ての電流を流した場合のシールド板内の磁束密度を模式的に示す図である。(A) is a graph showing the time change of the current of each phase of the three-phase AC, (b) is a diagram schematically showing the magnetic flux density in the shield plate when only the V-phase current is passed, (c). FIG. 5 is a diagram schematically showing the magnetic flux density in the shield plate when all three phases of current are passed. 図3は、本実施の形態に係る電流センサの補正方法における補正係数の導出手順を示すフロー図である。FIG. 3 is a flowchart showing a procedure for deriving a correction coefficient in the current sensor correction method according to the present embodiment. V相の電流と、V相のGMR出力電圧との関係の一例を示すグラフ図である。It is a graph which shows an example of the relationship between the electric current of V phase, and the GMR output voltage of V phase. (a)は図4の電流センサにおいて、V相の電流と、V相の線形補正後の出力電圧との関係の一例を示すグラフ図であり、(b)は、V相の電流と、V相の補正後の出力電圧との関係の一例を示すグラフ図である。FIG. 5A is a graph showing an example of the relationship between the V-phase current and the output voltage after linear correction of the V-phase in the current sensor of FIG. 4, and FIG. It is a graph which shows an example of the relationship with the output voltage after phase correction.

[実施の形態]
以下、本発明の実施の形態を添付図面にしたがって説明する。
[Embodiment]
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

(電流センサの全体構成)
図1は、本実施の形態に係る電流センサを示す図であり、(a)は斜視図、(b)はそのA−A線断面図である。
(Overall configuration of current sensor)
1A and 1B are diagrams showing a current sensor according to the present embodiment, in which FIG. 1A is a perspective view, and FIG.

図1(a),(b)に示すように、電流センサ1は、板状に形成されると共に、その板幅方向に離間して整列配置されており、三相交流における各相の電流が流れる3本のバスバ2と、3本のバスバ2を、板幅方向と垂直な厚さ方向に一括して挟み込むように配置されている磁性材料からなる第1シールド板41及び第2シールド板42と、各バスバ2と第1シールド板41との間にそれぞれ配置され、対応するバスバ2を流れる電流により発生する磁界の強度を検出する3つの磁気検出素子3と、を備えている。   As shown in FIGS. 1 (a) and 1 (b), the current sensor 1 is formed in a plate shape and is arranged in a spaced manner in the plate width direction so that the current of each phase in the three-phase alternating current is A first shield plate 41 and a second shield plate 42 made of a magnetic material are arranged so as to sandwich the three bus bars 2 flowing and the three bus bars 2 in a thickness direction perpendicular to the plate width direction. And three magnetic detection elements 3 that are arranged between each bus bar 2 and the first shield plate 41 and detect the intensity of the magnetic field generated by the current flowing through the corresponding bus bar 2.

バスバ2は、銅やアルミニウム等の電気良導体からなる板状の導体であり、電流を流す電流路となるものである。バスバ2は、例えば電気自動車やハイブリッド車におけるモータとインバータ間の電源ラインとして用いられるものである。本実施の形態では、三相交流のU相、V相、及びW相に対応した3本のバスバ2a〜2cを用いる場合を説明する。バスバ2aにはU相、バスバ2bにはV相、バスバ2cにはW相の電流が流れている。   The bus bar 2 is a plate-like conductor made of a good electrical conductor such as copper or aluminum, and serves as a current path through which a current flows. The bus bar 2 is used as a power line between a motor and an inverter in an electric vehicle or a hybrid vehicle, for example. In the present embodiment, a case will be described in which three bus bars 2a to 2c corresponding to the U-phase, V-phase, and W-phase of three-phase alternating current are used. A U-phase current flows through the bus bar 2a, a V-phase current flows through the bus bar 2b, and a W-phase current flows through the bus bar 2c.

各バスバ2a〜2cの幅方向の中央部には、各バスバ2a〜2cを厚さ方向に貫通する貫通孔5がそれぞれ形成されている。ここでは、矩形状の貫通孔5を形成する場合を示しているが、貫通孔5の形状は特に限定されない。貫通孔5を形成することで、貫通孔5の両側に電流路6が形成されることになる。貫通孔5内では、両電流路6で発生した磁界が互いに打ち消し合うので、貫通孔5内や貫通孔5の近傍における磁界の強度を小さくすることができる。その結果、大電流を検出する用途においても、磁気検出素子3で検出される磁界の強度を小さくして高感度の磁気検出素子3を使用することが可能になり、電流検出精度の向上に寄与する。なお、貫通孔5は必須ではなく、省略可能である。   A through-hole 5 that penetrates each bus bar 2a to 2c in the thickness direction is formed at the center in the width direction of each bus bar 2a to 2c. Here, although the case where the rectangular through-hole 5 is formed is shown, the shape of the through-hole 5 is not particularly limited. By forming the through hole 5, current paths 6 are formed on both sides of the through hole 5. In the through hole 5, the magnetic fields generated in both current paths 6 cancel each other, so that the strength of the magnetic field in the through hole 5 and in the vicinity of the through hole 5 can be reduced. As a result, even in applications that detect large currents, it is possible to reduce the strength of the magnetic field detected by the magnetic detection element 3 and use the highly sensitive magnetic detection element 3, which contributes to improved current detection accuracy. To do. The through-hole 5 is not essential and can be omitted.

以下、図1(a)における上下方向を厚さ方向、左奥から右手前方向を長さ方向、左手前から右奥方向を幅方向と呼称する。各バスバ2a〜2cは、幅方向に並ぶように等間隔に整列配置されており、互いに平行に配置されている。   Hereinafter, the vertical direction in FIG. 1A is referred to as the thickness direction, the left rear to the right front direction is referred to as the length direction, and the left front to the right rear direction is referred to as the width direction. The bus bars 2a to 2c are arranged at equal intervals so as to be arranged in the width direction, and are arranged in parallel to each other.

磁気検出素子3は、検出軸Dに沿った方向の磁界の強度(磁束密度)に応じた電圧の出力信号を出力するように構成されている。磁気検出素子3としては、例えば、ホール素子やGMR(Giant Magneto Resistive effect)素子、AMR(Anisotropic Magneto Resistive)素子、TMR(Tunneling Magneto Resistive)素子等を用いることができる。本実施の形態では、磁気検出素子3として、高い感度を有するGMR素子を用いた。   The magnetic detection element 3 is configured to output an output signal having a voltage corresponding to the intensity (magnetic flux density) of the magnetic field in the direction along the detection axis D. As the magnetic detection element 3, for example, a Hall element, a GMR (Giant Magneto Resistive effect) element, an AMR (Anisotropic Magneto Resistive) element, a TMR (Tunneling Magneto Resistive) element, or the like can be used. In the present embodiment, a GMR element having high sensitivity is used as the magnetic detection element 3.

電流センサ1では、各バスバ2a〜2cに対応するように合計3つの磁気検出素子3a〜3cが設けられている。各磁気検出素子3a〜3cは、厚さ方向から見た平面視で貫通孔5と重なる位置に配置される。これら各磁気検出素子3a〜3cは、図示しない基板に実装されており、基板を第1シールド板41とバスバ2との間に挿入することで、所定の位置に配置されている。ここでは、磁気検出素子3a〜3cの一部が貫通孔5内に配置されているが、磁気検出素子3a〜3cはその全体が貫通孔5外に配置されていてもよい。磁気検出素子3a〜3cは、バスバ2a〜2cに最大の電流が流れた際に磁気検出素子3a〜3cで検出される磁界強度が、磁気検出素子3a〜3cで検出可能な最大の磁界強度と略等しくなる位置に配置されるとよい。   In the current sensor 1, a total of three magnetic detection elements 3a to 3c are provided so as to correspond to the respective bus bars 2a to 2c. Each magnetic detection element 3a-3c is arrange | positioned in the position which overlaps with the through-hole 5 by planar view seen from the thickness direction. Each of the magnetic detection elements 3 a to 3 c is mounted on a substrate (not shown), and is disposed at a predetermined position by inserting the substrate between the first shield plate 41 and the bus bar 2. Here, some of the magnetic detection elements 3 a to 3 c are disposed in the through hole 5, but the magnetic detection elements 3 a to 3 c may be entirely disposed outside the through hole 5. The magnetic detection elements 3a to 3c have the maximum magnetic field intensity that can be detected by the magnetic detection elements 3a to 3c when the maximum current flows through the bus bars 2a to 2c. It is good to arrange | position in the position which becomes substantially equal.

本実施の形態では、各磁気検出素子3a〜3cは、その感磁位置(磁界の強度の検出位置)がバスバ2の厚さ方向における中心位置Oよりも第1シールド板41側にずれるように配置されている。つまり、各磁気検出素子3a〜3cは、第2シールド板42よりも第1シールド板41に近付くように配置されている。   In the present embodiment, each of the magnetic detection elements 3 a to 3 c has a magnetic sensing position (a detection position of the magnetic field strength) shifted from the center position O in the thickness direction of the bus bar 2 toward the first shield plate 41. Has been placed. That is, the magnetic detection elements 3 a to 3 c are arranged so as to be closer to the first shield plate 41 than the second shield plate 42.

第1シールド板41及び第2シールド板42は、外部からの磁界が磁気検出素子3の検出結果に影響を及ぼさないように、外部からの磁界を遮蔽するためのものである。第1シールド板41及び第2シールド板42は、幅方向に対向する2つの辺と、長さ方向に対向する2つの辺とを有する矩形の板状に形成されている。   The first shield plate 41 and the second shield plate 42 are for shielding an external magnetic field so that the external magnetic field does not affect the detection result of the magnetic detection element 3. The first shield plate 41 and the second shield plate 42 are formed in a rectangular plate shape having two sides facing each other in the width direction and two sides facing each other in the length direction.

第1シールド板41及び第2シールド板42は、バスバ2を厚さ方向から挟み込むようにバスバ2と離間して配置されている。また、第1シールド板41及び第2シールド板42は、その表面がバスバ2の表面に対して平行となるように(第1シールド板41及び第2シールド板42の厚さ方向とバスバ2の厚さ方向とが一致するように)配置されている。   The first shield plate 41 and the second shield plate 42 are spaced apart from the bus bar 2 so as to sandwich the bus bar 2 from the thickness direction. Further, the first shield plate 41 and the second shield plate 42 are parallel to the surface of the bus bar 2 (the thickness direction of the first shield plate 41 and the second shield plate 42 and the bus bar 2 It is arranged so that the thickness direction matches.

この電流センサ1では、第1シールド板41及び第2シールド板42のバスバ2からの距離(厚さ方向に沿った距離)a,bが等しくなっている。つまり、電流センサ1では、第1シールド板41と第2シールド板42間の中間位置(第1シールド板41及び第2シールド板42との距離が等しくなる位置)と、バスバ2の厚さ方向における中心位置Oとが一致している。   In this current sensor 1, the distances (distances along the thickness direction) a and b of the first shield plate 41 and the second shield plate 42 from the bus bar 2 are equal. That is, in the current sensor 1, the intermediate position between the first shield plate 41 and the second shield plate 42 (position where the distance between the first shield plate 41 and the second shield plate 42 is equal) and the thickness direction of the bus bar 2. The center position O in FIG.

図示していないが、両シールド板41,42の間には、モールド樹脂が充填され、両シールド板41,42と磁気検出素子3とバスバ2とが、モールド樹脂により一体に構成されている。モールド樹脂は、磁気検出素子3、バスバ2、および両シールド板41,42の位置関係を一定に保ち振動等による検出誤差を抑制する役割と、シールド板41,42間に異物が侵入することによる検出誤差を抑制する役割とを兼ねている。   Although not shown in the drawing, a mold resin is filled between the shield plates 41, 42, and the shield plates 41, 42, the magnetic detection element 3, and the bus bar 2 are integrally formed of the mold resin. The mold resin serves to keep the positional relationship among the magnetic detection element 3, the bus bar 2, and both the shield plates 41 and 42 constant and suppress detection errors due to vibration and the like, and because foreign matter enters between the shield plates 41 and 42. It also serves to suppress detection errors.

また、電流センサ1は、3つの磁気検出素子の出力電圧を補正する補正部7と、補正部による補正後の出力電圧を基に、バスバ2に流れている電流を演算するバスバ電流演算部8と、を備えている。補正部7及びバスバ電流演算部8は、CPU等の演算素子、メモリ、ソフトウェア、インターフェイス等を適宜組み合わせて実現される。補正部7及びバスバ電流演算部8は、例えば、磁気検出素子3を実装する基板に搭載されていてもよいし、専用の演算ユニット、あるいはパーソナルコンピュータ等の演算装置等に搭載されていてもよい。補正部7及びバスバ電流演算部8の詳細については後述する。   In addition, the current sensor 1 includes a correction unit 7 that corrects the output voltages of the three magnetic detection elements, and a bus bar current calculation unit 8 that calculates the current flowing in the bus bar 2 based on the output voltage corrected by the correction unit. And. The correction unit 7 and the bus bar current calculation unit 8 are realized by appropriately combining a calculation element such as a CPU, a memory, software, an interface, and the like. The correction unit 7 and the bus bar current calculation unit 8 may be mounted on, for example, a substrate on which the magnetic detection element 3 is mounted, or may be mounted on a dedicated calculation unit or a calculation device such as a personal computer. . Details of the correction unit 7 and the bus bar current calculation unit 8 will be described later.

(他相の電流の影響)
ここで、他相の電流の影響について説明する。三相交流の各相の電流の時間変化は、図2(a)のようになる。ここで、U相の電流:V相の電流:W相の電流=1:−2:1となる条件(図2(a)に白抜き矢印で示す条件)におけるシールド板41,42の磁界の状態を検討する。
(Influence of current of other phases)
Here, the influence of the current of the other phase will be described. The time change of the current of each phase of the three-phase alternating current is as shown in FIG. Here, the magnetic field of the shield plates 41 and 42 under the condition of U-phase current: V-phase current: W-phase current = 1: -2: 1 (conditions indicated by white arrows in FIG. 2A). Examine the condition.

図2(b)に示すように、三相全てのバスバ2に電流が流れる上記の条件(図2(a)に白抜き矢印で示す条件)においては、U相とW相にはV相と逆方向の電流が流れることになる。図2(b)においては、U相とW相には紙面方向奥から手前へと電流が流れ、V相には紙面方向手前から奥へと電流が流れる。そのため、U相とW相を流れる電流により生じる磁界の方向は、V相を流れる電流により生じる磁界の方向と反対方向になる。よって、シールド板41,42中でU相とW相を流れる電流により生じる磁界と、V相を流れる電流により生じる磁界とが打ち消し合い、シールド板41,42中の磁束密度が小さくなり、両シールド板41,42の透磁率も低下し難くなる。そのため、バスバに大電流を通電した場合もV相のバスバ2bに流した電流と、この電流により生じる磁界を検出して磁気検出素子3が出力する出力電圧の比例関係が保たれることになる。   As shown in FIG. 2 (b), in the above conditions (conditions indicated by white arrows in FIG. 2 (a)) in which current flows in all three-phase bus bars 2, the U phase and the W phase have the V phase. A reverse current flows. In FIG. 2B, a current flows from the back to the front in the paper direction in the U phase and the W phase, and a current flows from the front to the back in the paper direction in the V phase. Therefore, the direction of the magnetic field generated by the current flowing through the U phase and the W phase is opposite to the direction of the magnetic field generated by the current flowing through the V phase. Therefore, the magnetic field generated by the current flowing through the U phase and the W phase in the shield plates 41 and 42 and the magnetic field generated by the current flowing through the V phase cancel each other, and the magnetic flux density in the shield plates 41 and 42 is reduced. The permeability of the plates 41 and 42 is also difficult to decrease. Therefore, even when a large current is applied to the bus bar, the proportional relationship between the current flowing through the V-phase bus bar 2b and the output voltage output from the magnetic detection element 3 by detecting the magnetic field generated by this current is maintained. .

これに対して、図2(c)に示すように、U相とW相には電流が流れておらず、V相には紙面方向手前から奥へと電流が流れる場合を考える。幅方向中央に配置されたV相のバスバ2bにのみ電流を流す場合、シールド板41,42は、V相のバスバ2bを流れる電流により生じる磁界の影響のみを受ける。この生じた磁界の影響が大きい場合、両シールド板41,42中の磁束密度が飽和に近づき両シールド板41,42の透磁率が低下する。そうすると、両シールド板41,42がバスバ2bから生じた磁界を集磁する効果も低下し、シールド板41,42に磁界が集まらない。そのため、第1シールド板41と第2シールド板42とに囲まれた領域内、すなわち磁気検出素子3周辺に、集磁効果が低下した分も加算されて磁界が流れるようになる。その結果、バスバ2bに流した電流と、この電流により生じる磁界を検出して磁気検出素子3が出力する出力電圧の比例関係が、大電流領域において崩れてしまう(傾き(比例係数)が変わる)。なお、図2(b),(c)では、シールド板41,42中の磁界の向きを白抜き矢印の向きで表しており、当該白抜き矢印の大きさで磁界の大きさを模式的に表している。   On the other hand, as shown in FIG. 2C, a case is considered in which no current flows in the U phase and the W phase, and a current flows in the V phase from the front side to the back side. When a current is supplied only to the V-phase bus bar 2b arranged at the center in the width direction, the shield plates 41 and 42 are only affected by the magnetic field generated by the current flowing through the V-phase bus bar 2b. When the effect of the generated magnetic field is large, the magnetic flux density in both shield plates 41 and 42 approaches saturation, and the magnetic permeability of both shield plates 41 and 42 decreases. If it does so, the effect that both the shield plates 41 and 42 will collect the magnetic field produced from the bus bar 2b will also fall, and a magnetic field will not collect on the shield plates 41 and 42. FIG. Therefore, a magnetic field flows in the region surrounded by the first shield plate 41 and the second shield plate 42, that is, in the vicinity of the magnetic detection element 3 by adding the reduced magnetic flux collection effect. As a result, the proportional relationship between the current flowing through the bus bar 2b and the output voltage output from the magnetic detection element 3 by detecting the magnetic field generated by this current is disrupted in the large current region (the slope (proportional coefficient) changes). . 2B and 2C, the direction of the magnetic field in the shield plates 41 and 42 is represented by the direction of the white arrow, and the magnitude of the magnetic field is schematically represented by the size of the white arrow. Represents.

つまり、U相、V相、W相のいずれか1相のみの電流を流した場合と、三相全てのバスバ2に電流が流れる実際の使用時(三相通電時)とでは、バスバ2に同じ電流を流した場合でも、このバスバ2に対応する磁気検出素子3周辺における磁界強度が違っており、特に最大計測電流に近づくにつれて検出精度が低下してしまう。そこで、本実施の形態では、三相全てのバスバ2に電流が流れている状態で測定を行い、その測定結果を基に補正係数の導出を行う。以下、本実施の形態に係る電流センサの補正方法について、詳細に説明する。   That is, in the case where only one of the U-phase, V-phase, and W-phase currents flows, and in the actual use in which current flows in all three-phase bus bars 2 (three-phase energization), the bus bar 2 Even when the same current is applied, the magnetic field intensity around the magnetic detection element 3 corresponding to the bus bar 2 is different, and the detection accuracy decreases particularly as the maximum measurement current is approached. Therefore, in the present embodiment, measurement is performed in a state where current flows through all three-phase bus bars 2, and a correction coefficient is derived based on the measurement result. Hereinafter, the correction method of the current sensor according to the present embodiment will be described in detail.

(電流センサの補正方法)
図3は、本実施の形態に係る電流センサの補正方法における補正係数の導出手順を示すフロー図である。本実施の形態では、最終的に、下式(1)
out=M×I+N ・・・(1)
の関係が成り立つように、各磁気検出素子3の出力電圧の補正を行う。式(1)において、Mはゲイン設定値、Nはオフセット出力電圧設定値である。これらM,Nの値は、予め適宜設定しておく。
(Current sensor correction method)
FIG. 3 is a flowchart showing a procedure for deriving a correction coefficient in the current sensor correction method according to the present embodiment. In the present embodiment, finally, the following formula (1)
V out = M × I + N (1)
The output voltage of each magnetic detection element 3 is corrected so that the relationship In Equation (1), M is a gain setting value and N is an offset output voltage setting value. These values of M and N are set appropriately in advance.

図3に示すように、まず、ステップS1において、各バスバ2a〜2cに電流を流し(三相通電)、各磁気検出素子3a〜3cの出力電圧(GMR出力電圧という)を測定する。U相の電流をI、V相の電流をI、W相の電流をIとする。また、U相の磁気検出素子3aのGMR出力電圧をVm_u、V相の磁気検出素子3bのGMR出力電圧をVm_v、W相の磁気検出素子3cのGMR出力電圧をVm_wとする。 As shown in FIG. 3, first, in step S1, a current is passed through each of the bus bars 2a to 2c (three-phase energization), and output voltages (referred to as GMR output voltages) of the respective magnetic detection elements 3a to 3c are measured. The U-phase current is I u , the V-phase current is I v , and the W-phase current is I w . Also, the GMR output voltage of the U-phase magnetic detection element 3a is V m_u , the GMR output voltage of the V-phase magnetic detection element 3b is V m_v , and the GMR output voltage of the W-phase magnetic detection element 3c is V m_w .

本実施の形態では、以下の4つの条件でステップS1の測定を行う。
第1条件 I:I:I=2:−1:−1
第2条件 I:I:I=−1:1:−1
第3条件 I:I:I=−1:−1:2
第4条件 I:I:I=−1:2:−1
この4つの条件のうち、第1、第3及び第4条件は、三相交流時の電流比である。第1条件は、Iが最大となる三相交流時の電流比、第3条件は、Iが最大となる三相交流時の電流比、第4条件は、Iが最大となる三相交流時の電流比である。第2条件は、三相交流時に含まれない電流比の条件である。このように、本実施の形態では、3本のバスバ2a〜2cに三相交流時の電流比、及び三相交流時に含まれない電流比の条件で電流を流した状態で、3つの磁気検出素子3a〜3bの出力電圧を測定する。
In the present embodiment, the measurement in step S1 is performed under the following four conditions.
First condition I u : I v : I w = 2: −1: −1
Second condition I u : I v : I w = −1: 1: −1
Third condition I u : I v : I w = −1: −1: 2
Fourth condition I u : I v : I w = −1: 2: −1
Of these four conditions, the first, third and fourth conditions are current ratios during three-phase alternating current. The first condition is the current ratio at the three-phase AC that maximizes I u , the third condition is the current ratio at the three-phase AC that maximizes I w , and the fourth condition is the three currents that maximize I v It is a current ratio at the time of phase alternating current. The second condition is a current ratio condition that is not included during three-phase alternating current. As described above, in the present embodiment, the three bus bars 2a to 2c are subjected to three magnetic detections in a state where a current is passed under the conditions of the current ratio during three-phase alternating current and the current ratio not included during three-phase alternating current. The output voltage of elements 3a-3b is measured.

三相交流時に含まれない電流比の条件を含めるのは、後述する干渉補正係数の導出時に、三相交流時の電流比の3条件(第1、第3及び第4条件)のみで演算を行った場合、各条件が相互に独立の関係ではなくなり、干渉補正係数を導出できなくなるためである。干渉補正係数の導出手順については、後に説明する。   The current ratio condition that is not included in the three-phase AC is included in the calculation of only the three current ratio conditions (first, third, and fourth conditions) in the three-phase AC when deriving the interference correction coefficient described later. This is because the conditions are not independent of each other and the interference correction coefficient cannot be derived. The procedure for deriving the interference correction coefficient will be described later.

その後、ステップS2〜S5にて、線形補正係数の導出を行う。ステップS2では、ステップS1の測定結果を任意のフィッティング式に適用し、当該フィッティング式に設定された諸係数(フィッティング係数という)を求める。ここでは、磁気検出素子3としてGMR素子を用いていることから、U相については[数1]に示す式(2),(3)のフィッティング式を用いた。この式(2)、(3)において、Voff、Vsat、Bbias/k、φ、θ、bu1、及びbu2は、フィッティング係数であり、これらのフィッティング係数を、最小二乗法等を用いて算出する。

Figure 2019158631
Thereafter, linear correction coefficients are derived in steps S2 to S5. In step S2, the measurement result of step S1 is applied to an arbitrary fitting equation, and various coefficients (referred to as fitting factors) set in the fitting equation are obtained. Here, since a GMR element is used as the magnetic detection element 3, the fitting formulas (2) and (3) shown in [Equation 1] are used for the U phase. In these formulas (2) and (3), V off , V sat , B bias / k, φ, θ, b u1 , and b u2 are fitting coefficients, and these fitting coefficients are expressed by least square method or the like. Use to calculate.
Figure 2019158631

V相については、[数2]に示す式(4),(5)のフィッティング式を用いた。なお、bv1、及びbv2は、フィッティング係数である。

Figure 2019158631
For the V phase, the fitting equations of equations (4) and (5) shown in [Equation 2] were used. Note that b v1 and b v2 are fitting coefficients.
Figure 2019158631

同様に、W相については、[数3]に示す式(6),(7)のフィッティング式を用いた。なお、bw1、及びbw2は、フィッティング係数である。

Figure 2019158631
Similarly, for the W phase, the fitting equations (6) and (7) shown in [Equation 3] were used. Note that b w1 and b w2 are fitting coefficients.
Figure 2019158631

その後、ステップS3にて、式(2)のフィッティング式に各フィッティング式を代入すると共に、ステップS1で測定したGMR出力電圧Vm_uを代入し、Idet_uを求める。この求めたIdet_uを、仮想的な出力電圧VL_uとする(変数の置き換えを行う)。同様に、式(4),(6)のフィッティング式に各フィッティング式を代入すると共に、ステップS1で測定したGMR出力電圧Vm_v,Vm_wを代入し、Idet_v,Idet_wをそれぞれ求め、仮想的な出力VL_v,VL_wとする。 Thereafter, in step S3, each fitting equation is substituted into the fitting equation of equation (2), and the GMR output voltage V m_u measured in step S1 is substituted to obtain I det_u . The obtained I det_u is set as a virtual output voltage V L_u (a variable is replaced). Similarly, the fitting equations are substituted into the fitting equations of equations (4) and (6), and the GMR output voltages V m_v and V m_w measured in step S1 are substituted to obtain I det_v and I det_w , respectively. Output VL_v and VL_w .

その後、ステップS4にて、式(3)からIdet_uを求めると共に、このIdet_uと、ステップS3で求めた仮想的な出力VL_uとの関係を線形近似により求める。すなわち、式(2)から得た仮想的な出力VL_uと、式(3)から得たIdet_uを基に、最小二乗法等により、下式(8)
L_u=m’×Idet_u+n’ ・・・(8)
における係数m’,n’を求める。
Thereafter, in step S4, I det_u is obtained from equation (3), and the relationship between this I det_u and the virtual output V L_u obtained in step S3 is obtained by linear approximation. That is, based on the virtual output V L — u obtained from the equation (2) and I det — u obtained from the equation (3), the following equation (8)
V Lu = m ′ u × I detu + n ′ u (8)
The coefficients m ′ u and n ′ u at are obtained.

また、式(4)から得た仮想的な出力VL_vと、式(5)から得たIdet_vを基に、最小二乗法等により、下式(9)
L_v=m’×Idet_v+n’ ・・・(9)
における係数m’,n’を求める。
Further, based on the virtual output V L_v obtained from the equation (4) and I det_v obtained from the equation (5), the following equation (9) is obtained by the least square method or the like.
V Lv = m ′ v × I detv + n ′ v (9)
The coefficients m ′ v and n ′ v at are obtained.

同様に、式(6)から得た仮想的な出力VL_wと、式(7)から得たIdet_wを基に、最小二乗法等により、下式(10)
L_w=m’×Idet_w+n’ ・・・(10)
における係数m’,n’を求める。
Similarly, the following equation (10) is obtained by the least square method or the like based on the virtual output V L_w obtained from equation (6) and I det_w obtained from equation (7).
V Lw = m ′ w × I detw + n ′ w (10)
The coefficients m ′ w and n ′ w at are obtained.

その後、ステップS5にて、式(8)〜(10)の関係を基に、線形補正係数の導出と線形補正後の出力電圧の演算を行う。具体的には、U相については、下式(11),(12)
=M/m’ ・・・(11)
=M×n’/m’ ・・・(12)
により、線形補正係数m,nを導出する。ここで、Mは上記式(1)のゲイン設定値である。これら線形補正係数m,nを用いて、下式(13)
LC_u=m×VL_u+n ・・・(13)
により、線形補正後の出力電圧VLC_uを演算する。なお、この式(13)に上記式(8),(11),(12)を代入すると、下式
LC_u=M×Idet_u
で表されることになる。
Thereafter, in step S5, derivation of the linear correction coefficient and calculation of the output voltage after the linear correction are performed based on the relations of the equations (8) to (10). Specifically, for the U phase, the following equations (11), (12)
m u = M / m ′ u (11)
n u = M × n ′ u / m ′ u (12)
Thus, the linear correction coefficients m u and n u are derived. Here, M is the gain setting value of the above equation (1). Using these linear correction coefficients m u and n u , the following equation (13)
V LCu = m u × V Lu + n u (13)
Thus, the output voltage V LC_u after linear correction is calculated. If the above equations (8), (11), and (12) are substituted into this equation (13), the following equation: V LC_u = M × I det_u
It will be represented by

V相については、下式(14),(15)
=M/m’ ・・・(14)
=M×n’/m’ ・・・(15)
により、線形補正係数m,nを導出する。また、下式(16)
LC_v=m×VL_v+n ・・・(16)
により、線形補正後の出力電圧VLC_vを演算する。
For the V phase, the following equations (14), (15)
m v = M / m ′ v (14)
n v = M × n ′ v / m ′ v (15)
Thus, linear correction coefficients m v and n v are derived. Also, the following formula (16)
V LCv = m v × V Lv + n v (16)
Thus, the output voltage V LC_v after linear correction is calculated.

同様に、W相については、下式(17),(18)
=M/m’ ・・・(17)
=M×n’/m’ (18)
により、線形補正係数m,nを導出する。また、下式(19)
LC_w=m×VL_w+n ・・・(19)
により、線形補正後の出力電圧VLC_wを演算する。
Similarly, for the W phase, the following equations (17), (18)
m w = M / m ′ w (17)
n w = M × n ′ w / m ′ w (18)
Thus, the linear correction coefficients m w and n w are derived. Also, the following formula (19)
V LC_w = m w × V L_w + n w ··· (19)
Thus, the output voltage V LC_w after linear correction is calculated.

その後、ステップS6〜S9にて、ステップS5で得た線形補正後の出力電圧VLC_u,VLC_v,VLC_wを用い、干渉補正係数の導出を行う。ステップS6では、上記の式(3),(5),(7)を基に、[3]に示す式(20)により、仮の干渉補正係数A’ (a’uu,・・・,a’ww)を求める。

Figure 2019158631
Thereafter, in step S6 to S9, the linear corrected output voltage V LC_u obtained in step S5, V LC_V, using V LC_w, the derivation of the interference correction coefficient. In step S6, based on the above equations (3), (5), and (7), a temporary interference correction coefficient A ′ (a ′ uu ,..., A by the equation (20) shown in [3]. ' ww ) is calculated .
Figure 2019158631

この仮の干渉補正係数A’は、三相交流時以外の条件(第2条件)を含むため、誤差を含んでいる。そのため、本実施の形態では、以下のステップS7〜S9にて、干渉補正係数の調整を行っている。なお、線形補正時に、三相交流時に含まれない電流比となる条件(第2条件)を用いず、三相交流時の電流比となる条件(第1,第3,及び第4条件)のみの測定結果を用いることも考えられる。しかし、この場合、第1条件と第3条件から、自ずと第4条件が求められることから、互いに独立な3つの条件ではなくなる。そのため、三相交流時の電流比となる条件のみとした場合には、仮の干渉補正係数A’には逆行列が存在しなくなり、干渉補正係数の演算が困難となる。本実施の形態のように、線形補正時に、三相交流時の電流比となる2条件(第1及び第3条件)、及び三相交流時に含まれない電流比となる1条件(第2条件)での測定結果を用いて、線形補正係数の導出を行うことで、干渉補正係数の演算が可能になる。   Since this temporary interference correction coefficient A ′ includes a condition (second condition) other than the three-phase AC, it includes an error. Therefore, in this embodiment, the interference correction coefficient is adjusted in the following steps S7 to S9. Note that only the conditions (first, third, and fourth conditions) for the current ratio during three-phase alternating current are used without using the current ratio (second condition) that is not included during three-phase alternating current during linear correction. It is also conceivable to use the measurement results. However, in this case, since the fourth condition is automatically obtained from the first condition and the third condition, the three conditions are not mutually independent. For this reason, when only the conditions for the current ratio at the time of three-phase alternating current are used, there is no inverse matrix in the temporary interference correction coefficient A ′, making it difficult to calculate the interference correction coefficient. As in the present embodiment, at the time of linear correction, two conditions (first and third conditions) that are current ratios during three-phase AC and one condition (second condition) that is not included during three-phase AC By calculating the linear correction coefficient using the measurement result in (), the interference correction coefficient can be calculated.

仮の干渉補正係数A’を求めた後、ステップS7にて、仮の干渉補正係数A’で干渉補正を行った場合の仮の干渉補正後の出力電圧を求める。具体的には、[数5]に示す式(21)により、仮の干渉補正後の出力電圧V’IC_u1,V’IC_v4,V’IC_w3を求める。なお、式(21)では、各電圧(仮の干渉補正後の出力電圧、及び線形補正後の出力電圧)の変数の最後に、何番目の条件であるかを数字1桁で示している。例えば、VLC_u1は、第1条件におけるU相の線形補正後の出力電圧であることを表しており、V’IC_u1は、第1条件での演算結果(VLC_u1、VLC_v1、及びVLC_w1)を用いて演算されるU相の仮の干渉補正後の出力電圧であることを表している。

Figure 2019158631
After obtaining the temporary interference correction coefficient A ′, in step S7, the output voltage after the temporary interference correction when the interference correction is performed with the temporary interference correction coefficient A ′ is obtained. Specifically, output voltages V ′ IC_u1 , V ′ IC_v4 , and V ′ IC_w3 after provisional interference correction are obtained by Expression (21) shown in [Formula 5]. In equation (21), at the end of the variable of each voltage (the output voltage after provisional interference correction and the output voltage after linear correction), the number of the condition is indicated by one digit. For example, V LC_u1 represents an output voltage after linear correction of the U-phase in the first condition, and V ′ IC_u1 represents an operation result (V LC_u1 , V LC_v1 , and V LC_w1 ) in the first condition. Represents the output voltage after the temporary interference correction of the U phase calculated by using.
Figure 2019158631

このように、本実施の形態では、U相の仮の干渉補正後の出力電圧V’IC_uについては、U相の電流が最大となる第1条件での演算結果(VLC_u1,VLC_v1,VLC_w1)を用いて演算する。V相の仮の干渉補正後の出力電圧V’IC_vについては、V相の電流が最大となる第4条件での演算結果(VLC_u4,VLC_v4,VLC_w4)を用いて演算する。同様に、W相の仮の干渉補正後の出力電圧V’IC_wについては、W相の電流が最大となる第3条件での演算結果(VLC_u3,VLC_v3,VLC_w3)を用いて演算する。 As described above, in the present embodiment, the output voltage V ′ IC_u after the U-phase temporary interference correction is calculated under the first condition (V LC_u1 , V LC_v1 , V 1) at which the U-phase current becomes maximum. LC_w1 ). The V-phase provisional interference-corrected output voltage V ′ IC_v is calculated using calculation results (V LC_u4 , V LC_v4 , V LC_w4 ) under the fourth condition that maximizes the V-phase current. Similarly, the output voltage V ′ IC_w after W-phase temporary interference correction is calculated using the calculation results (V LC_u3 , V LC_v3 , V LC_w3 ) under the third condition that maximizes the W-phase current. .

つまり、本実施の形態では、三相交流時の電流比となり、かつ、U相、V相、或いはW相の電流が最大となる3条件(第1,第3,及び第4条件)で求めた線形補正後の出力電圧を基に、干渉補正係数を導出している。これにより、U相、V相、或いはW相の電流が最大の条件下でゲイン誤差が最小となるため、出力誤差を小さくすることができる。   In other words, in the present embodiment, the current ratio during three-phase alternating current and the U-phase, V-phase, or W-phase current are maximized under three conditions (first, third, and fourth conditions). The interference correction coefficient is derived based on the output voltage after the linear correction. As a result, the gain error is minimized under the maximum current of the U-phase, V-phase, or W-phase, so that the output error can be reduced.

その後、ステップS8にて、ステップS7で求めた仮の干渉補正後の出力電圧V’IC_u1,V’IC_v4,V’IC_w3と、各バスバ2を流れる電流Iu1(第1条件でのU相の電流I),Iv4(第4条件でのV相の電流I),Iw3(第3条件でのW相の電流I)との関係を、線形近似により求める。すなわち、[数6]に示す(22)における、係数m’’、m’’、m’’を、最小二乗法等により求める。

Figure 2019158631
Thereafter, at step S8, the temporary interference corrected output voltage V 'IC_u1, V' obtained at step S7 IC_v4, and V 'IC_w3, the U-phase of a current I u1 (first condition flowing through each bus bar 2 The relationship between the currents I u ), I v4 (V-phase current I v under the fourth condition), I w3 (W-phase current I w under the third condition) is obtained by linear approximation. That is, the coefficients m ″ u , m ″ v and m ″ w in (22) shown in [Equation 6] are obtained by the least square method or the like.
Figure 2019158631

ステップS7で求めた各係数m’’、m’’、m’’を基に、[数7]に示す式(23)により、干渉補正係数A(auu,・・・,aww)を求める。以上により、仮の干渉補正係数A’に調整を行った干渉補正係数Aが導出される。

Figure 2019158631
Based on the coefficients m ″ u , m ″ v , and m ″ w obtained in step S7, the interference correction coefficient A (a uu ,..., A ww ). As described above, the interference correction coefficient A adjusted to the temporary interference correction coefficient A ′ is derived.
Figure 2019158631

この干渉補正係数Aを用い、[数8]に示す式(24)の関係式を用いることで、線形補正後の出力電圧VLC_u,VLC_v,VLC_wから、補正後の出力電圧Vout_u,Vout_v,Vout_wを得ることができる。なお、式(24)におけるNは、上記式(1)のオフセット出力電圧設定値である。

Figure 2019158631
Using this interference correction coefficients A, by using the relational expression of Formula (24) shown in [Expression 8], the output voltage V LC_u after linear correction, V LC_V, from V LC_w, the corrected output voltage V OUT_U, V out_v and V out_w can be obtained. Note that N in Equation (24) is the offset output voltage setting value in Equation (1) above.
Figure 2019158631

さらに、式(24)で得られた補正後の出力電圧Vout_u,Vout_v,Vout_wから、上記の式(1)を用いて、バスバ2を流れる電流I,I,Iを求めることができる。なお、上記の式(1)は、三相交流の各相に適用すると、下式(25)〜(27)で表すことができる。
out_u=M×I+N ・・・(25)
out_v=M×I+N ・・・(26)
out_w=M×I+N ・・・(27)
Further, the currents I u , I v , I w flowing through the bus bar 2 are obtained from the corrected output voltages V out — u , V out — v , V out — w obtained by the equation (24) using the above equation (1). be able to. In addition, said Formula (1) can be represented by the following Formula (25)-(27), if it applies to each phase of a three-phase alternating current.
V outu = M × I u + N (25)
V outv = M × I v + N (26)
V outw = M × I w + N (27)

ここで、各補正による効果について説明する。V相の電流Iと、V相のGMR出力電圧Vm_vとの関係の一例を図4に示す。図4に示すように、GMR素子の特性及び他相からの干渉の影響を受け、電流IとGMR出力電圧Vm_vとの関係は線形関係とはならない。 Here, the effect of each correction will be described. An example of the relationship between the V-phase current I v and the V-phase GMR output voltage V m_v is shown in FIG. As shown in FIG. 4, the influence of interference from properties and other phases of the GMR element, the relationship between the current I v and the GMR output voltage V m_v is not a linear relationship.

この電流センサ1における電流Iと線形補正後の出力電圧VLC_vとの関係は、図5(a)のようになる。図5(a)に示すように、電流Iと線形補正後の出力電圧VLC_vとの関係は線形関係に近付いている。しかし、三相交流の電流比によっては、他相からの干渉の影響を受け誤差が生じている。 Relationship between the output voltage V LC_V after current I v and linear correction in the current sensor 1 is as shown in FIG. 5 (a). As shown in FIG. 5 (a), the relationship between the output voltage V LC_V after current I v and linear correction is close to linear relationship. However, depending on the current ratio of the three-phase alternating current, an error occurs due to the influence of interference from other phases.

さらに、この電流センサ1における電流Iと補正後の出力電圧Vout_vとの関係は、図5(b)のようになる。図5(b)に示すように、線形補正と干渉補正の両方を行うことで、電流Iと補正後の出力電圧Vout_vとの関係は、三相交流の電流比によらず線形関係となっており、補正による誤差を抑制し高精度な検出が可能となっている。 Further, the relationship between the current I v and the corrected output voltage V out_v in the current sensor 1 is as shown in FIG. As shown in FIG. 5 (b), by performing both linear correction and interference correction, the relationship between the output voltage V Out_v after correction current I v, a linear relationship regardless of the current ratio of the three-phase AC Thus, the error due to the correction is suppressed and high-precision detection is possible.

(補正部7及びバスバ電流演算部8)
補正部7は、図3で導出した線形補正係数m,nや干渉補正係数Aを基に、各磁気検出素子3の出力電圧(GMR出力電圧Vm_u,Vm_v,Vm_w)から、補正後の出力電圧Vout_u,Vout_v,Vout_wを演算するものである。
(Correction unit 7 and bus bar current calculation unit 8)
Based on the linear correction coefficients m and n derived in FIG. 3 and the interference correction coefficient A, the correction unit 7 corrects the output from the output voltages (GMR output voltages V m_u , V m_v , V m_w ) of each magnetic detection element 3. Output voltages V out — u , V out — v , and V out — w are calculated.

具体的には、補正部7は、各磁気検出素子3から入力されたGMR出力電圧Vm_uを基に、[数9]に示す式(28)を用いて、線形補正後の出力電圧VLC_uを求める。同様にして、GMR出力電圧Vm_v,Vm_wを基に、出力電圧VLC_v,VLC_wを求める。

Figure 2019158631
Specifically, the correction unit 7 uses the equation (28) shown in [Equation 9] based on the GMR output voltage V m_u input from each magnetic detection element 3 to output the linear corrected output voltage V LC_u. Ask for. Similarly, GMR output voltage V m_v, based on V m_w, the output voltage V LC_V, seek V LC_w.
Figure 2019158631

その後、補正部7は、求めた線形補正後の出力電圧VLC_u,VLC_v,VLC_wから、上記式(24)を用いて、補正後の出力電圧Vout_u,Vout_v,Vout_wを求める。補正部7は、求めた補正後の出力電圧Vout_u,Vout_v,Vout_wをバスバ電流演算部8に出力する。 Then, the correction unit 7 obtains linear corrected output voltage V LC_u, V LC_v, from V LC_w, by using equation (24), the corrected output voltage V out_u, V out_v, seek V out_w. The correction unit 7 outputs the obtained corrected output voltages V out_u , V out_v , and V out_w to the bus bar current calculation unit 8.

バスバ電流演算部8は、補正部7から入力された補正後の出力電圧Vout_u,Vout_v,Vout_wを基に、上記式(25)〜(27)を変形した下式(29)〜(31)
=(Vout_u―N)/M ・・・(29)
=(Vout_v―N)/M ・・・(30)
=(Vout_w―N)/M ・・・(31)
用いて、バスバ2を流れる電流I,I,Iを求める。
Busbar current computing section 8, it is input from the correction unit 7 the corrected output voltage V out_u, V out_v, based on V out_w, the equation (25) the following formula was modified to (27) (29) - ( 31)
I u = (V outu −N) / M (29)
I v = (V outv −N) / M (30)
I w = (V outw −N) / M (31)
The currents I u , I v and I w flowing through the bus bar 2 are obtained.

(実施の形態の作用及び効果)
以上説明したように、本実施の形態に係る電流センサの補正方法では、3本のバスバ2に三相交流時の電流比、及び三相交流時に含まれない電流比の条件で電流を流した状態で、3つの磁気検出素子3の出力電圧を測定し、当該測定結果を基に線形補正係数及び干渉補正係数を導出し、導出した線形補正係数及び干渉補正係数を用いて、出力電圧の線形補正及び干渉補正を行っている。
(Operation and effect of the embodiment)
As described above, in the current sensor correction method according to the present embodiment, a current is passed through the three bus bars 2 under the conditions of the current ratio during three-phase alternating current and the current ratio not included during three-phase alternating current. In this state, the output voltages of the three magnetic detection elements 3 are measured, the linear correction coefficient and the interference correction coefficient are derived based on the measurement results, and the linearity of the output voltage is calculated using the derived linear correction coefficient and the interference correction coefficient. Correction and interference correction are performed.

三相交流における各相の電流が流れる3本のバスバ2を、厚さ方向に一括して挟み込むようにシールド板41,42を設けた電流センサ1においては、単相通電時と三相通電時でシールド板41,42内での磁束密度の分布が大きく異なるが、本実施の形態では、3本のバスバ2に電流を流した状態での出力電圧の測定結果を用いて補正を行っているため、補正精度が高くなり、高精度な電流計測が可能になる。   In the current sensor 1 provided with the shield plates 41 and 42 so that the three bus bars 2 through which the current of each phase in the three-phase alternating current flows are collectively sandwiched in the thickness direction, the single-phase energization and the three-phase energization However, in this embodiment, the correction is performed using the measurement result of the output voltage in the state where current is passed through the three bus bars 2, although the distribution of the magnetic flux density in the shield plates 41 and 42 is greatly different. As a result, the correction accuracy is increased, and highly accurate current measurement is possible.

また、出力電圧の測定時に、三相交流時の電流比の条件のみならず、三相交流時に含まれない電流比の条件を用いることで、線形補正と干渉補正の両方を精度よく行うことが可能になり、電流計測をより高精度に行うことが可能になる。   In addition, when measuring the output voltage, not only the current ratio condition during three-phase alternating current but also the current ratio condition not included during three-phase alternating current can be used to accurately perform both linear correction and interference correction. As a result, current measurement can be performed with higher accuracy.

(変形例)
上記実施の形態では、温度の影響について言及しなかったが、ジュール熱により磁気検出素子3の温度が大きく変化し、GMR出力電圧Vm_u,Vm_v,Vm_wが大きく変化する場合には、フィッティング式として温度による影響を考慮したものを用いてもよい。例えば、上記式(2),(4),(6)におけるVoff及びVsatを、例えば下式(32),(33)
off(T)=l×T+m×T+n ・・・(32)
sat(T)=l×T+m×T+n ・・・(33)
で表されるように、温度の関数として定義することで、温度補正も同時に行うことが可能である。なお、式(32),(33)におけるl,m,n,l,m,nは、フィッティング係数である。
(Modification)
In the above embodiment, the influence of the temperature was not mentioned. However, when the temperature of the magnetic detection element 3 changes greatly due to Joule heat and the GMR output voltages V m_u , V m_v , V m_w change greatly, fitting is performed. You may use what considered the influence by temperature as a type | formula. For example, V off and V sat in the above formulas (2), (4), and (6) are set as, for example, the following formulas (32) and (33):
V off (T) = l o × T 2 + m o × T + n o ··· (32)
V sat (T) = l s × T 2 + m s × T + n s (33)
As shown in the equation, temperature correction can be performed at the same time by defining it as a function of temperature. In the equations (32) and (33), l o , m o , n o , l s , m s , and n s are fitting coefficients.

また、磁気検出素子3として、ホールIC等の線形補正を必要としないものを用いる場合には、フィッティング式として、下式(34)
=Vgain×Idet+Voff ・・・(34)
で表されるような単純な一次方程式を用いることも可能である。なお、式(34)におけるVgain,Voffは、フィッティング係数である。
Further, when using a magnetic detection element 3 that does not require linear correction, such as a Hall IC, the following equation (34) is used as the fitting equation:
V m = V gain × I det + V off (34)
It is also possible to use a simple linear equation represented by Note that V gain and V off in equation (34) are fitting coefficients.

(実施の形態のまとめ)
次に、以上説明した実施の形態から把握される技術思想について、実施の形態における符号等を援用して記載する。ただし、以下の記載における各符号等は、特許請求の範囲における構成要素を実施の形態に具体的に示した部材等に限定するものではない。
(Summary of embodiment)
Next, the technical idea grasped from the embodiment described above will be described with reference to the reference numerals in the embodiment. However, the reference numerals and the like in the following description are not intended to limit the constituent elements in the claims to the members and the like specifically shown in the embodiments.

[1]板状に形成されると共に、その板幅方向に離間して整列配置されており、三相交流における各相の電流が流れる3本のバスバ(2)と、前記3本のバスバ(2)を、前記板幅方向と垂直な厚さ方向に一括して挟み込むように配置されている磁性材料からなる第1シールド板(41)及び第2シールド板(42)と、前記各バスバ(2)と前記第1シールド板(41)との間にそれぞれ配置され、対応する前記バスバ(2)を流れる電流により発生する磁界の強度を検出する3つの磁気検出素子(3)と、を備えた電流センサ(1)の補正方法であって、前記3本のバスバ(2)に三相交流時の電流比、及び三相交流時に含まれない電流比の条件で電流を流した状態で、前記3つの磁気検出素子(3)の出力電圧を測定し、当該測定結果を基に線形補正係数及び干渉補正係数を導出し、導出した線形補正係数及び干渉補正係数を用いて、前記出力電圧の線形補正及び干渉補正を行う、電流センサの補正方法。 [1] Three bus bars (2) that are formed in a plate shape and are arranged apart from each other in the width direction of the plate and through which current of each phase in three-phase alternating current flows, and the three bus bars ( 2), a first shield plate (41) and a second shield plate (42) made of a magnetic material arranged so as to be sandwiched in a thickness direction perpendicular to the plate width direction, and each bus bar ( 2) and the first shield plate (41), and three magnetic detection elements (3) for detecting the strength of the magnetic field generated by the current flowing through the corresponding bus bar (2). In the current sensor (1) correction method, a current is passed through the three bus bars (2) under conditions of a current ratio during three-phase alternating current and a current ratio not included during three-phase alternating current. The output voltage of the three magnetic detection elements (3) is measured, and the measurement result It derives a linear correction coefficient and interference correction coefficient group using the derived linear correction coefficient and interference correction coefficient, performs linear correction and interference correction of the output voltage, the correction method of the current sensor.

[2]三相交流時の電流比となる2条件、及び三相交流時に含まれない電流比となる1条件での測定結果を用いて、前記線形補正係数の導出を行い、線形補正後の出力電圧に干渉補正を行うことで、補正後の出力を得る、[1]に記載の電流センサの補正方法。 [2] The linear correction coefficient is derived using measurement results under two conditions that are current ratios during three-phase AC and one condition that is not included during three-phase AC. The method for correcting a current sensor according to [1], wherein an output after correction is obtained by performing interference correction on the output voltage.

[3]三相交流時の電流比となり、かつ、U相、V相、或いはW相の電流が最大となる3条件で求めた線形補正後の出力電圧を基に、干渉補正係数を導出する、[2]に記載の電流センサの補正方法。 [3] An interference correction coefficient is derived based on the output voltage after linear correction, which is obtained under three conditions in which the current ratio during three-phase alternating current is obtained and the U-phase, V-phase, or W-phase current is maximum. The correction method of the current sensor according to [2].

[4]板状に形成されると共に、その板幅方向に離間して整列配置されており、三相交流における各相の電流が流れる3本のバスバ(2)と、前記3本のバスバ(2)を、前記板幅方向と垂直な厚さ方向に一括して挟み込むように配置されている磁性材料からなる第1シールド板(41)及び第2シールド板(42)と、前記各バスバ(2)と前記第1シールド板(41)との間にそれぞれ配置され、対応する前記バスバ(2)を流れる電流により発生する磁界の強度を検出する3つの磁気検出素子(3)と、前記3つの磁気検出素子の出力電圧を補正する補正部(7)と、を備え、前記補正部(7)は、前記3本のバスバ(2)に三相交流時の電流比、及び三相交流時に含まれない電流比の条件で電流を流した状態で、前記3つの磁気検出素子(3)の出力電圧を測定した結果を基に導出した線形補正係数及び干渉補正係数を用い、前記出力電圧の線形補正及び干渉補正を行う、電流センサ(1)。 [4] Three bus bars (2) that are formed in a plate shape and are arranged apart from each other in the width direction of the plate and through which current of each phase in three-phase AC flows, and the three bus bars ( 2), a first shield plate (41) and a second shield plate (42) made of a magnetic material arranged so as to be sandwiched in a thickness direction perpendicular to the plate width direction, and each bus bar ( 2) and the first shield plate (41), respectively, and three magnetic detection elements (3) for detecting the strength of the magnetic field generated by the current flowing through the corresponding bus bar (2), A correction unit (7) that corrects the output voltages of the two magnetic detection elements, and the correction unit (7) has a current ratio during three-phase alternating current and a three-phase alternating current in the three bus bars (2). The above three magnetic detections with current flowing under the condition of current ratio not included Using the linear correction coefficient and interference correction coefficient output voltage derived based on the results of measurement of the child (3), performs linear correction and interference correction of the output voltage, the current sensor (1).

以上、本発明の実施の形態を説明したが、上記に記載した実施の形態は特許請求の範囲に係る発明を限定するものではない。また、実施の形態の中で説明した特徴の組合せの全てが発明の課題を解決するための手段に必須であるとは限らない点に留意すべきである。また、本発明は、その趣旨を逸脱しない範囲で適宜変形して実施することが可能である。   While the embodiments of the present invention have been described above, the embodiments described above do not limit the invention according to the claims. In addition, it should be noted that not all the combinations of features described in the embodiments are essential for the means for solving the problems of the invention. Further, the present invention can be appropriately modified and implemented without departing from the spirit of the present invention.

1…電流センサ
2…バスバ
3…磁気検出素子
41…第1シールド板
42…第2シールド板
7…補正部
DESCRIPTION OF SYMBOLS 1 ... Current sensor 2 ... Bus bar 3 ... Magnetic detection element 41 ... 1st shield board 42 ... 2nd shield board 7 ... Correction | amendment part

Claims (4)

板状に形成されると共に、その板幅方向に離間して整列配置されており、三相交流における各相の電流が流れる3本のバスバと、
前記3本のバスバを、前記板幅方向と垂直な厚さ方向に一括して挟み込むように配置されている磁性材料からなる第1シールド板及び第2シールド板と、
前記各バスバと前記第1シールド板との間にそれぞれ配置され、対応する前記バスバを流れる電流により発生する磁界の強度を検出する3つの磁気検出素子と、を備えた電流センサの補正方法であって、
前記3本のバスバに三相交流時の電流比、及び三相交流時に含まれない電流比の条件で電流を流した状態で、前記3つの磁気検出素子の出力電圧を測定し、当該測定結果を基に線形補正係数及び干渉補正係数を導出し、
導出した線形補正係数及び干渉補正係数を用いて、前記出力電圧の線形補正及び干渉補正を行う、
電流センサの補正方法。
Three bus bars that are formed in a plate shape and are arranged apart from each other in the width direction of the plate, and each phase current in three-phase alternating current flows;
A first shield plate and a second shield plate made of a magnetic material arranged so as to sandwich the three bus bars in a thickness direction perpendicular to the plate width direction;
A current sensor correction method comprising: three magnetic detection elements that are arranged between each bus bar and the first shield plate and detect the intensity of a magnetic field generated by a current flowing through the corresponding bus bar. And
The output voltage of the three magnetic detection elements was measured in a state where current was passed through the three bus bars under the conditions of the current ratio during three-phase alternating current and the current ratio not included during three-phase alternating current. Deriving linear correction coefficient and interference correction coefficient based on
Using the derived linear correction coefficient and interference correction coefficient, linear correction and interference correction of the output voltage,
Current sensor correction method.
三相交流時の電流比となる2条件、及び三相交流時に含まれない電流比となる1条件での測定結果を用いて、前記線形補正係数の導出を行い、
線形補正後の出力電圧に干渉補正を行うことで、補正後の出力を得る、
請求項1に記載の電流センサの補正方法。
Deriving the linear correction coefficient using the measurement results under two conditions that are current ratios during three-phase AC and one condition that is not included during three-phase AC,
By performing interference correction on the output voltage after linear correction, the corrected output is obtained.
The current sensor correction method according to claim 1.
三相交流時の電流比となり、かつ、U相、V相、或いはW相の電流が最大となる3条件で求めた線形補正後の出力電圧を基に、干渉補正係数を導出する、
請求項2に記載の電流センサの補正方法。
An interference correction coefficient is derived based on the output voltage after linear correction obtained under the three conditions where the current ratio is three-phase AC and the current of the U-phase, V-phase, or W-phase is maximized.
The current sensor correction method according to claim 2.
板状に形成されると共に、その板幅方向に離間して整列配置されており、三相交流における各相の電流が流れる3本のバスバと、
前記3本のバスバを、前記板幅方向と垂直な厚さ方向に一括して挟み込むように配置されている磁性材料からなる第1シールド板及び第2シールド板と、
前記各バスバと前記第1シールド板との間にそれぞれ配置され、対応する前記バスバを流れる電流により発生する磁界の強度を検出する3つの磁気検出素子と、
前記3つの磁気検出素子の出力電圧を補正する補正部と、を備え、
前記補正部は、前記3本のバスバに三相交流時の電流比、及び三相交流時に含まれない電流比の条件で電流を流した状態で、前記3つの磁気検出素子の出力電圧を測定した結果を基に導出した線形補正係数及び干渉補正係数を用い、前記出力電圧の線形補正及び干渉補正を行う、
電流センサ。
Three bus bars that are formed in a plate shape and are arranged apart from each other in the width direction of the plate, and each phase current in three-phase alternating current flows;
A first shield plate and a second shield plate made of a magnetic material arranged so as to sandwich the three bus bars in a thickness direction perpendicular to the plate width direction;
Three magnetic detection elements that are respectively arranged between the bus bars and the first shield plate and detect the intensity of a magnetic field generated by a current flowing through the corresponding bus bars;
A correction unit for correcting the output voltage of the three magnetic detection elements,
The correction unit measures the output voltage of the three magnetic detection elements in a state where a current is passed through the three bus bars under conditions of a current ratio during three-phase alternating current and a current ratio not included during three-phase alternating current. Using the linear correction coefficient and the interference correction coefficient derived based on the result, linear correction and interference correction of the output voltage,
Current sensor.
JP2018046416A 2018-03-14 2018-03-14 Current sensor correction method and current sensor Pending JP2019158631A (en)

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Cited By (2)

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CN114062755A (en) * 2020-08-04 2022-02-18 株式会社爱信 Current sensor
CN115176166A (en) * 2020-01-10 2022-10-11 莱姆国际股份有限公司 Current measuring system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115176166A (en) * 2020-01-10 2022-10-11 莱姆国际股份有限公司 Current measuring system
KR20220145823A (en) * 2020-01-10 2022-10-31 렘 인터내셔널 에스에이 current measuring system
US20230029921A1 (en) * 2020-01-10 2023-02-02 Lem International Sa Current measurement system
JP2023510786A (en) * 2020-01-10 2023-03-15 レム・インターナショナル・エスエイ Current measurement system
US12146900B2 (en) * 2020-01-10 2024-11-19 Lem International Sa Current measurement system
KR102813321B1 (en) * 2020-01-10 2025-05-27 렘 인터내셔널 에스에이 Current measurement system
JP7735280B2 (en) 2020-01-10 2025-09-08 レム・インターナショナル・エスエイ Current Measurement System
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