JP2019023764A - Substrate processing method - Google Patents

Abstract

Provided is a substrate processing method for improving drawing accuracy (such as uniformity of exposure amount) and fidelity when a drawing unit draws a pattern along a drawing line. A substrate processing method condenses a beam in an ultraviolet wavelength region that is pulse-oscillated from a pulse light source device at a frequency Fz into a spot light on a surface of a sheet substrate, and shakes the beam with an optical scanner. The spot light is scanned one-dimensionally over a drawing line having a length LBL extending in the width direction intersecting the long direction, and the spot light is scanned based on the drawing data corresponding to the pattern during the spot light scanning. Modulating the intensity. The distance along the drawing line between the spot light by condensing one pulse of the beam and the spot light by condensing the next one pulse is CXs, the effective dimension along the spot light drawing line is Xs, and the spot light Is set to satisfy the relationship of Xs> CXs and Fz> LBL / (Ts · Xs) where Ts is the scanning time for scanning the length LBL. [Selection] FIG.

Description

  The present invention relates to a substrate processing apparatus, a device manufacturing method, and a substrate processing method for forming a fine electronic device structure on a substrate.

  2. Description of the Related Art Conventionally, a manufacturing apparatus that performs drawing at a predetermined position on a sheet-like medium (substrate) is known as a substrate processing apparatus (see, for example, Patent Document 1). The manufacturing apparatus described in Patent Document 1 measures the expansion and contraction of a sheet substrate by detecting an alignment mark on a flexible long sheet substrate that easily expands and contracts in the width direction, and the drawing position ( The machining position is corrected.

JP 2010-91990 A

  In the manufacturing apparatus of Patent Document 1, exposure is performed by switching a spatial modulation element (DMD: Digital Micromirror Device) while transporting the substrate in the transport direction, and a pattern is drawn on the substrate by a plurality of drawing units. In the manufacturing apparatus of Patent Document 1, patterns adjacent to each other in the width direction of the substrate are subjected to joint exposure by a plurality of drawing units, but are generated by performing test exposure and development in order to suppress errors in joint exposure. The measurement result of the pattern position error at the joint is fed back. However, the feedback process including such operations as test exposure, development, and measurement, depending on the frequency, temporarily stops the production line, reduces the productivity of the product, and wastes the substrate. May occur.

  An aspect of the present invention has been made in view of the above-described problems, and its purpose is to draw accuracy (such as uniformity of exposure amount) and faithfulness when one drawing unit draws a pattern along a drawing line. An object of the present invention is to provide a substrate processing method that increases the degree of the process.

  According to a first aspect of the present invention, there is provided a substrate processing method for drawing a pattern of an electronic device on a long sheet substrate, the sheet substrate being sent at a predetermined speed in a long direction, and a pulse light source device A beam in the ultraviolet wavelength range that is pulse-oscillated at a frequency Fz is condensed on the spot light on the surface of the sheet substrate, and the beam is shaken by an optical scanner, whereby the spot light is changed to the long direction. One-dimensional scanning over a drawing line having a length LBL extending in the intersecting width direction, and modulating the intensity of the spot light based on the drawing data corresponding to the pattern during the spot light scanning. And an interval along the drawing line between the spot light obtained by condensing one pulse of the beam and the spot light obtained by condensing the next one pulse is defined as CXs, And Xs> CXs and Fz> LBL / (Ts · Xs) where Xs is an effective dimension of the light beam along the drawing line, and Ts is a scanning time for the spot light to scan the length LBL. ), A substrate processing method set to satisfy the relationship is provided.

  According to a second aspect of the present invention, there is provided a substrate processing method for drawing an electronic device pattern on a long sheet substrate, the step of feeding the sheet substrate in a long direction at a predetermined speed, and a pulse light source device A drawing line extending in the width direction intersecting with the long direction of the sheet substrate while condensing the beam in the ultraviolet wavelength range pulsed at a frequency Fz to spot light on the surface of the sheet substrate Scanning one-dimensionally over the area, and modulating the intensity of the beam with an optical switching element based on drawing data obtained by dividing the pattern into pixels during scanning of the spot light, and Provided is a substrate processing method in which a response frequency Fss during modulation of an optical switching element and a pulse oscillation frequency Fz of the beam are set in a relationship of Fz> Fss. That.

  According to the aspect of the present invention, it is possible to provide a substrate processing method with improved drawing accuracy (such as uniformity of exposure amount) and fidelity when one drawing unit draws a pattern along a drawing line.

FIG. 1 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. FIG. 2 is a perspective view showing the arrangement of the main parts of the exposure apparatus of FIG. FIG. 3 is a diagram illustrating an arrangement relationship between the alignment microscope and the drawing lines on the substrate. FIG. 4 is a view showing the arrangement of the rotating drum and drawing apparatus of the exposure apparatus of FIG. FIG. 5 is a plan view showing the arrangement of the main parts of the exposure apparatus of FIG. FIG. 6 is a perspective view showing the configuration of the branching optical system of the exposure apparatus shown in FIG. FIG. 7 is a view showing the arrangement relationship of a plurality of scanners in the exposure apparatus of FIG. FIG. 8 is a diagram for explaining an optical configuration for eliminating a drawing line shift caused by a tilt of the reflecting surface of the scanner. FIG. 9 is a perspective view showing an arrangement relationship among the alignment microscope, the drawing line, and the encoder head on the substrate. FIG. 10 is a perspective view showing the surface structure of the rotating drum of the exposure apparatus of FIG. FIG. 11 is an explanatory diagram showing a positional relationship between a drawing line and a drawing pattern on the substrate. FIG. 12 is an explanatory diagram showing the relationship between the beam spot and the drawing line. FIG. 13 is a graph simulating the change in intensity distribution due to the amount of overlap of the beam spots for two pulses obtained on the substrate. FIG. 14 is a flowchart relating to the adjustment method of the exposure apparatus of the first embodiment. FIG. 15 is an explanatory diagram schematically showing the relationship between the reference pattern of the rotating drum and the drawing line. FIG. 16 is an explanatory diagram schematically illustrating a signal output from a photoelectric sensor that receives reflected light from the reference pattern of the rotating drum in a bright field. FIG. 17 is an explanatory diagram schematically showing a photoelectric sensor that receives reflected light from the reference pattern of the rotating drum in a dark field. FIG. 18 is an explanatory diagram schematically showing a signal output from a photoelectric sensor that receives reflected light from the reference pattern of the rotating drum in a dark field. FIG. 19 is an explanatory diagram schematically showing the positional relationship between the reference patterns of the rotating drum. FIG. 20 is an explanatory diagram schematically showing the relative positional relationship between a plurality of drawing lines. FIG. 21 is an explanatory diagram schematically showing the relationship between the movement distance per unit time of the substrate and the number of drawing lines included in the movement distance. FIG. 22 is an explanatory diagram schematically illustrating pulse light synchronized with the system clock of the pulse light source. FIG. 23 is a block diagram illustrating an example of a circuit configuration for generating a system clock of a pulse light source. FIG. 24 is a timing chart showing signal transition of each part in the circuit configuration of FIG. FIG. 25 is a flowchart showing each device manufacturing method.

  DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of the components can be made without departing from the scope of the present invention.

[First Embodiment]
FIG. 1 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. The substrate processing apparatus of the first embodiment is an exposure apparatus EX that performs an exposure process on a substrate P, and the exposure apparatus EX is incorporated in a device manufacturing system 1 that performs various processes on the exposed substrate P to manufacture devices. ing. First, the device manufacturing system 1 will be described.

<Device manufacturing system>
The device manufacturing system 1 is a line for manufacturing a flexible display as a device (flexible display manufacturing line). Examples of the flexible display include an organic EL display. The device manufacturing system 1 is configured such that a substrate P is fed from a supply roll (not shown) in which a flexible (flexible) long substrate P is wound in a roll shape, and various processes are performed on the fed substrate P. After the substrate is continuously applied, a so-called roll-to-roll system is adopted in which the processed substrate P is wound as a flexible device on a collection roll (not shown). In the device manufacturing system 1 of the first embodiment, a substrate P that is a film-like sheet is sent out from a supply roll, and the substrate P sent out from the supply roll is sequentially processed into a process apparatus U1, an exposure apparatus EX, and a process apparatus. The example until it winds up by the collection | recovery roll is shown through U2. Here, the board | substrate P used as the process target of the device manufacturing system 1 is demonstrated.

  For the substrate P, for example, a foil (foil) made of a metal or an alloy such as a resin film or stainless steel is used. Examples of the resin film material include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. Includes one or more.

  As the substrate P, for example, it is desirable to select a substrate whose thermal expansion coefficient is not remarkably large so that deformation amounts due to heat received in various processes applied to the substrate P can be substantially ignored. The thermal expansion coefficient may be set smaller than a threshold corresponding to the process temperature or the like, for example, by mixing an inorganic filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like. The substrate P may be a single layer of ultrathin glass having a thickness of about 100 μm manufactured by a float process or the like, or a laminate in which the above resin film, foil, or the like is bonded to the ultrathin glass. It may be.

  The substrate P thus configured becomes a supply roll by being wound in a roll shape, and this supply roll is mounted on the device manufacturing system 1. The device manufacturing system 1 on which the supply roll is mounted repeatedly performs various processes for manufacturing the device on the substrate P sent out from the supply roll in the longitudinal direction. For this reason, a pattern for a plurality of electronic devices (display panel, printed circuit board, etc.) is formed on the processed substrate P in a state in which the patterns are connected at regular intervals in the longitudinal direction. That is, the substrate P sent out from the supply roll is a multi-sided substrate. The substrate P is modified and activated in advance by a predetermined pretreatment, or a fine partition structure (concave / convex structure formed by an imprint method) for precise patterning is formed on the surface. You may have done.

  The processed substrate P is recovered as a recovery roll by being wound into a roll. The collection roll is attached to a dicing device (not shown). The dicing apparatus to which the collection roll is mounted forms a plurality of devices by dividing (dicing) the processed substrate P for each device. Regarding the dimensions of the substrate P, for example, the dimension in the width direction (short direction) is about 10 cm to 2 m, and the dimension in the length direction (long direction) is 10 m or more. In addition, the dimension of the board | substrate P is not limited to an above-described dimension.

  Next, the device manufacturing system 1 will be described with reference to FIG. The device manufacturing system 1 includes a process apparatus U1, an exposure apparatus EX, and a process apparatus U2. In FIG. 1, an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal to each other is shown. The X direction is a direction from the process apparatus U1 to the process apparatus U2 through the exposure apparatus EX in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the width direction of the substrate P. The Z direction is a direction (vertical direction) orthogonal to the X direction and the Y direction, and the XY plane is parallel to the installation surface E of the production line where the exposure apparatus EX is installed.

  The process apparatus U1 performs a pre-process (pre-process) on the substrate P subjected to the exposure process by the exposure apparatus EX. The process apparatus U1 sends the preprocessed substrate P toward the exposure apparatus EX. At this time, the substrate P sent to the exposure apparatus EX is a substrate (photosensitive substrate) P having a photosensitive functional layer (photosensitive layer) formed on the surface thereof.

  Here, the photosensitive functional layer is applied as a solution on the substrate P and dried to form a layer (film). A typical photosensitive functional layer is a photoresist, but as a material that does not require development processing, a photosensitive silane coupling material (SAM) in which the lyophobic property of a portion irradiated with ultraviolet rays is modified, Alternatively, there is a photosensitive reducing material in which a plating reducing group is exposed in a portion that has been irradiated with ultraviolet rays. When a photosensitive silane coupling material is used as the photosensitive functional layer, the pattern portion exposed to ultraviolet rays on the substrate P is modified from lyophobic to lyophilic, so that the lyophilic portion A conductive ink (ink containing conductive nanoparticles such as silver and copper) is selectively applied thereon to form a pattern layer. When a photosensitive reducing material is used as the photosensitive functional layer, the plating reducing group is exposed to the pattern portion exposed to ultraviolet rays on the substrate, so that the substrate P is immediately immersed in a plating solution containing palladium ions after exposure. By dipping for a certain time, a pattern layer of palladium is formed (deposited).

  The exposure apparatus EX draws patterns such as various circuits for display panels or various wirings on the substrate P supplied from the process apparatus U1. Although details will be described later, the exposure apparatus EX performs a plurality of drawing operations obtained by scanning each of the drawing beams LB projected toward the substrate P from each of the plurality of drawing units UW1 to UW5 in a predetermined scanning direction. A predetermined pattern is exposed on the substrate P by the lines LL1 to LL5.

  The process apparatus U2 receives the substrate P that has been subjected to the exposure process by the exposure apparatus EX, and performs a post-process (post-process) on the substrate P. When the photosensitive functional layer of the substrate P is a photoresist, the process apparatus U2 performs a post-bake process, a development process, a cleaning process, a drying process, or the like at a temperature lower than the glass transition temperature of the substrate P. When the photosensitive functional layer of the substrate P is a photosensitive plating reducing material, the process device U2 performs an electroless plating process, a cleaning process, a drying process, and the like. Further, when the photosensitive functional layer of the substrate P is a photosensitive silane coupling material, the process apparatus U2 performs a selective application process of liquid ink on the lyophilic portion on the substrate P, a drying process, and the like. Do. The device pattern layer is formed on the substrate P through the process apparatus U2.

<Exposure device (substrate processing device)>
Next, the exposure apparatus EX will be described with reference to FIGS. FIG. 2 is a perspective view showing the arrangement of the main parts of the exposure apparatus of FIG. FIG. 3 is a diagram illustrating an arrangement relationship between the alignment microscope and the drawing lines on the substrate. FIG. 4 is a view showing the arrangement of the rotating drum and the drawing apparatus (drawing unit) of the exposure apparatus shown in FIG. FIG. 5 is a plan view showing the arrangement of the main parts of the exposure apparatus of FIG. FIG. 6 is a perspective view showing the configuration of the branching optical system of the exposure apparatus shown in FIG. FIG. 7 is a view showing the arrangement relationship of the scanners in a plurality of drawing units of the exposure apparatus of FIG. FIG. 8 is a diagram for explaining an optical configuration for eliminating a drawing line shift caused by a tilt of the reflecting surface of the scanner. FIG. 9 is a perspective view showing an arrangement relationship among the alignment microscope, the drawing line, and the encoder head on the substrate. FIG. 10 is a perspective view showing an example of the surface structure of the rotating drum of the exposure apparatus of FIG.

  As shown in FIG. 1, the exposure apparatus EX is an exposure apparatus that does not use a mask, that is, a so-called maskless drawing exposure apparatus. In this embodiment, the substrate P is moved at a constant speed in the transport direction (long direction). While continuously transporting, spot light of the drawing beam LB is scanned at high speed in a predetermined scanning direction (width direction of the substrate P), thereby drawing on the surface of the substrate P and forming a predetermined pattern on the substrate P. This is a raster-scan direct drawing exposure apparatus.

  As shown in FIG. 1, the exposure apparatus EX includes a drawing apparatus 11, a substrate transport mechanism 12, alignment microscopes AM1 and AM2, and a control unit 16. The drawing apparatus 11 includes a plurality of drawing units UW1 to UW5. The drawing apparatus 11 includes a plurality of drawing units UW1 to UW5 on a part of the substrate P that is conveyed in a state of being closely supported above the outer peripheral surface of the cylindrical rotary drum DR that is also a part of the substrate conveying mechanism 12. To draw a predetermined pattern. The substrate transport mechanism 12 transports the substrate P transported from the process device U1 in the previous process to the process device U2 in the subsequent process at a predetermined speed. The alignment microscopes AM1 and AM2 detect an alignment mark or the like formed in advance on the substrate P in order to relatively align (align) the pattern to be drawn on the substrate P with the substrate P. A control unit 16 including a computer, a microcomputer, a CPU, an FPGA, and the like controls each unit of the exposure apparatus EX and causes each unit to execute a process. The control unit 16 may be a part or all of a host control device that controls the device manufacturing system 1. Moreover, the control part 16 is controlled by a high-order control apparatus. The host control device may be another device such as a host computer that manages the production line.

  As shown in FIG. 2, the exposure apparatus EX includes an apparatus frame 13 that supports at least a part of the drawing apparatus 11 and the substrate transport mechanism 12 (such as a rotating drum DR), and the apparatus frame 13 includes a rotating drum. A rotational position detection mechanism (such as an encoder head shown in FIGS. 4 and 9) that detects a rotational angle position and rotational speed of the DR, a displacement in the direction of the rotational axis, and the alignment microscope shown in FIG. 1 (or FIGS. 3 and 9). AM1, AM2, etc. are attached. Further, in the exposure apparatus EX, a light source device CNT that emits ultraviolet laser light (pulse light) as a drawing beam LB is provided as shown in FIGS. The exposure apparatus EX distributes the drawing beam LB emitted from the light source device CNT to each of the plurality of drawing units UW1 to UW5 constituting the drawing apparatus 11 with a substantially uniform light amount (illuminance).

  As shown in FIG. 1, the exposure apparatus EX is stored in a temperature control chamber EVC. The temperature control chamber EVC is installed on the installation surface (floor surface) E of the manufacturing plant via passive or active vibration isolation units SU1, SU2. The anti-vibration units SU1, SU2 are provided on the installation surface E, and reduce vibration from the installation surface E. The temperature control chamber EVC suppresses a shape change due to the temperature of the substrate P transported inside by keeping the inside at a predetermined temperature.

  The substrate transport mechanism 12 of the exposure apparatus EX includes an edge position controller EPC, a driving roller DR4, a tension adjusting roller RT1, a rotating drum (cylindrical drum) DR, a tension adjusting roller RT2, and a driving roller in order from the upstream side in the transport direction of the substrate P. It has DR6 and drive roller DR7.

  The edge position controller EPC adjusts the position in the width direction (Y direction) of the substrate P transported from the process apparatus U1. The edge position controller EPC moves the substrate P so that the end portion (edge) position in the width direction of the substrate P sent from the process apparatus U1 falls within a range of about ± 10 μm to several tens μm with respect to the target position. By slightly moving in the width direction, the position of the substrate P in the width direction is corrected.

  The nip-type driving roller DR4 rotates while sandwiching both front and back surfaces of the substrate P conveyed from the edge position controller EPC, and sends the substrate P downstream in the conveyance direction, thereby directing the substrate P toward the rotating drum DR. Transport. The rotary drum DR supports a portion of the substrate P that is subjected to pattern exposure in close contact with a cylindrical outer peripheral surface having a constant radius from a rotation center line (rotation axis) AX2 extending in the Y direction. By rotating around, the substrate P is transported in the longitudinal direction.

  In order to rotate the rotary drum DR around the rotation center line AX2, shafts Sf2 coaxial with the rotation center line AX2 are provided on both sides of the rotation drum DR, and the shaft part Sf2 is as shown in FIG. The device frame 13 is pivotally supported via a bearing. Rotational torque from a drive source (not shown) (such as a motor or a reduction gear mechanism) is given to the shaft portion Sf2. A plane including the rotation center line AX2 and parallel to the YZ plane is defined as a center plane p3.

  The two sets of tension adjusting rollers RT1 and RT2 give a predetermined tension to the substrate P which is wound around and supported by the rotary drum DR. The two sets of nip type driving rollers DR6, DR7 are arranged at a predetermined interval in the transport direction of the substrate P, and give a predetermined slack (play) DL to the exposed substrate P. The drive roller DR6 rotates while sandwiching the upstream side of the substrate P to be transported, and the drive roller DR7 rotates while sandwiching the downstream side of the substrate P to be transported to direct the substrate P toward the process apparatus U2. Transport. At this time, since the slack DL is given to the substrate P, it is possible to absorb fluctuations in the conveyance speed of the substrate P that occur on the downstream side in the conveyance direction with respect to the drive roller DR6, and exposure processing to the substrate P due to fluctuations in the conveyance speed. The influence of can be cut off.

  Accordingly, the substrate transport mechanism 12 adjusts the position in the width direction of the substrate P transported from the process apparatus U1 by the edge position roller EPC. The substrate transport mechanism 12 transports the substrate P, whose position in the width direction has been adjusted, to the tension adjustment roller RT1 by the driving roller DR4, and transports the substrate P that has passed through the tension adjustment roller RT1 to the rotary drum DR. The substrate transport mechanism 12 transports the substrate P supported by the rotary drum DR toward the tension adjustment roller RT2 by rotating the rotary drum DR. The substrate transport mechanism 12 transports the substrate P transported to the tension adjustment roller RT2 to the drive roller DR6, and transports the substrate P transported to the drive roller DR6 to the drive roller DR7. Then, the substrate transport mechanism 12 transports the substrate P toward the process apparatus U2 while giving a slack DL to the substrate P by the drive roller DR6 and the drive roller DR7.

  With reference to FIG. 2 again, the apparatus frame 13 of the exposure apparatus EX will be described. 2 is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal to each other, and is an orthogonal coordinate system similar to that in FIG.

  As shown in FIG. 2, the apparatus frame 13 includes, in order from the lower side in the Z direction, a main body frame 21, a three-point seat 22 as a support mechanism, a first optical surface plate 23, a moving mechanism 24, and a second mechanism frame. And an optical surface plate 25. The main body frame 21 is a part that is installed on the installation surface E via the vibration isolation units SU1, SU2. The main body frame 21 rotatably supports (supports) the rotating drum DR and the tension adjusting rollers RT1 (not shown) and RT2. The first optical surface plate 23 is provided on the upper side in the vertical direction of the rotary drum DR, and is installed on the main body frame 21 via a three-point seat 22. The three-point seat 22 supports the first optical surface plate 23 at three support points, and the position (height position) in the Z direction at each support point can be adjusted. For this reason, the three-point seat 22 can adjust the inclination of the surface of the first optical surface plate 23 with respect to the horizontal plane to a predetermined inclination. When the apparatus frame 13 is assembled, the position between the main body frame 21 and the three point seats 22 can be adjusted in the X direction and the Y direction within the XY plane. On the other hand, after the device frame 13 is assembled, the space between the main body frame 21 and the three point seats 22 is fixed (rigid state) in the XY plane.

  The second optical surface plate 25 is provided on the upper side in the vertical direction of the first optical surface plate 23, and is installed on the first optical surface plate 23 via the moving mechanism 24. The surface of the second optical surface plate 25 is parallel to the surface of the first optical surface plate 23. On the second optical surface plate 25, a plurality of drawing units UW1 to UW5 of the drawing apparatus 11 are installed. The moving mechanism 24 moves to the first optical surface plate 23 around a predetermined rotation axis I extending in the vertical direction while keeping the surface surfaces of the first optical surface plate 23 and the second optical surface plate 25 in parallel. In contrast, the second optical surface plate 25 can be finely rotated finely. The rotation range is, for example, about ± several hundred milliradians with respect to the reference position, and has a structure in which an angle can be set with a resolution of 1 to several milliradians. Further, the moving mechanism 24 moves the second optical surface plate 25 in the X direction with respect to the first optical surface plate 23 while keeping the surface surfaces of the first optical surface plate 23 and the second optical surface plate 25 parallel to each other. And a mechanism for precisely and finely shifting in at least one of the Y direction and the rotational axis I can be finely displaced from the reference position in the X or Y direction with a resolution of the order of μm. The rotation axis I extends in the vertical direction in the central plane p3 at the reference position, and is a predetermined point in the surface of the substrate P (the drawing surface curved along the circumferential surface) wound around the rotary drum DR. (The middle point in the width direction of the substrate P) is passed (see FIG. 3). By rotating or shifting the second optical surface plate 25 with respect to the first optical surface plate 23 by such a moving mechanism 24, a plurality of drawings on the rotating drum DR or the substrate P wound around the rotating drum DR. The positions of the units UW1 to UW5 can be adjusted integrally.

  Next, the light source device CNT will be described with reference to FIG. The light source device CNT is installed on the main body frame 21 of the device frame 13. The light source device CNT emits a laser beam as a drawing beam LB projected onto the substrate P. The light source device CNT includes a light source that emits light in a predetermined wavelength range suitable for exposure of the photosensitive functional layer on the substrate P and having a strong photoactive action in the ultraviolet range. As the light source, for example, a laser light source that uses YAG third harmonic laser light (wavelength 355 nm) and continuously oscillates or pulsates at about several KHz to several hundred MHz can be used.

  The light source device CNT includes a laser light generation unit CU1 and a wavelength conversion unit CU2. The laser light generation unit CU1 includes a laser light source OSC and fiber amplifiers FB1 and FB2. The laser beam generator CU1 emits the fundamental wave laser beam Ls. The fiber amplifiers FB1 and FB2 amplify the fundamental laser beam Ls with an optical fiber. The laser beam generation unit CU1 causes the amplified fundamental wave laser beam Lr to enter the wavelength conversion unit CU2. The wavelength conversion unit CU2 is provided with a wavelength conversion optical element, a dichroic mirror, a polarization beam splitter, a prism, and the like. By using these light (wavelength) selection components, a laser beam having a wavelength of 355 nm, which is a third harmonic laser ( The drawing beam LB) is taken out. At this time, the light source device CNT generates a drawing beam LB having a wavelength of 355 nm as pulsed light of about several KHz to several hundreds of MHz by pulsing the laser light source OSC that generates seed light in synchronization with a system clock or the like. . When this type of fiber amplifier is used, the emission time of one pulse of laser light (Lr or LB) that is finally output can be set to the picosecond order by the pulse driving mode of the laser light source OSC. .

  Examples of the light source include a lamp light source such as a mercury lamp having a bright line (g line, h line, i line, etc.) in the ultraviolet region, a laser diode having an oscillation peak in the ultraviolet region having a wavelength of 450 nm or less, and a light emitting diode (LED). ) Or a gas laser light source such as a KrF excimer laser beam (wavelength 248 nm), an ArF excimer laser beam (wavelength 193 nm), or an XeCl excimer laser (wavelength 308 nm) that oscillates far ultraviolet light (DUV light) can be used. .

  Here, the drawing beam LB emitted from the light source device CNT is projected onto the substrate P via the polarization beam splitter PBS provided in each of the drawing units UW1 to UW5, as will be described later. In general, the polarization beam splitter PBS reflects a light beam that becomes S-polarized linearly polarized light and transmits a light beam that becomes P-polarized linearly polarized light. For this reason, in the light source device CNT, it is preferable to emit a laser beam in which the drawing beam LB incident on the polarization beam splitter PBS is a linearly polarized light (S-polarized light). Moreover, since the laser beam has a high energy density, it is possible to appropriately ensure the illuminance of the light beam projected onto the substrate P.

  Next, the drawing apparatus 11 of the exposure apparatus EX will be described with reference to FIG. The drawing apparatus 11 is a so-called multi-beam type drawing apparatus 11 using a plurality of drawing units UW1 to UW5. The drawing apparatus 11 branches a plurality of drawing beams LB emitted from the light source device CNT into a plurality of drawing beams LB (for example, 5 in the first embodiment) on the substrate P as shown in FIG. ) Are drawn and scanned with a small spot light (diameter of several μm) along the drawing lines LL1 to LL5. And the drawing apparatus 11 splices the patterns drawn on the substrate P by each of the plurality of drawing lines LL1 to LL5 in the width direction of the substrate P. First, with reference to FIG. 3, a plurality of drawing lines LL1 to LL5 (spot light scanning traces) formed on the substrate P by scanning a plurality of drawing beams LB by the drawing apparatus 11 will be described.

  As shown in FIG. 3, the plurality of drawing lines LL <b> 1 to LL <b> 5 are arranged in two rows in the circumferential direction of the rotary drum DR with the center plane p <b> 3 interposed therebetween. On the upstream substrate P in the rotation direction, odd-numbered first drawing lines LL1, third drawing lines LL3, and fifth drawing lines LL5 are arranged in parallel to the Y axis. On the substrate P on the downstream side in the rotation direction, even-numbered second drawing lines LL2 and fourth drawing lines LL4 are arranged in parallel to the Y axis.

  Each of the drawing lines LL1 to LL5 is formed substantially in parallel along the width direction (Y direction) of the substrate P, that is, along the rotation center line AX2 of the rotary drum DR, and is shorter than the length of the substrate P in the width direction. Yes. More precisely, each drawing line LL1 to LL5 is such that when the substrate transport mechanism 12 transports the substrate P at the reference speed, the pattern joining error obtained by the plurality of drawing lines LL1 to LL5 is minimized. The rotation center line AX2 of the rotary drum DR may be tilted by a predetermined angle with respect to the extending direction (axial direction or width direction).

  The odd-numbered first drawing line LL1, third drawing line LL3, and fifth drawing line LL5 are arranged at a predetermined interval in the direction of the center line AX2 of the rotary drum DR. Further, the even-numbered second drawing line LL2 and fourth drawing line LL4 are arranged at a predetermined interval in the direction of the center line AX2 of the rotary drum DR. At this time, the second drawing line LL2 is arranged between the first drawing line LL1 and the third drawing line LL3 in the direction of the center line AX2. Similarly, the third drawing line LL3 is disposed between the second drawing line LL2 and the fourth drawing line LL4 in the direction of the center line AX2. The fourth drawing line LL4 is disposed between the third drawing line LL3 and the fifth drawing line LL5 in the direction of the center line AX2. The first to fifth drawing lines LL1 to LL5 are arranged so as to cover the entire width in the width direction (axial direction) of the exposure region A7 drawn on the substrate P.

  The scanning direction of the spot light of the drawing beam LB scanned along the odd-numbered first drawing line LL1, third drawing line LL3, and fifth drawing line LL5 is a one-dimensional direction and is the same direction. ing. In addition, the scanning direction of the spot light of the drawing beam LB scanned along the even-numbered second drawing line LL2 and fourth drawing line LL4 is a one-dimensional direction and is the same direction. At this time, the scanning direction (+ Y direction) of the spot light of the drawing beam LB scanned along the odd-numbered drawing lines LL1, LL3, LL5 and the drawing beam scanned along the even-numbered drawing lines LL2, LL4. The scanning direction (−Y direction) of the LB spot light is opposite to that shown by the arrow in FIG. This is because the drawing units UW1 to UW5 have the same configuration, the odd numbered drawing units and the even numbered drawing units are rotated and rotated 180 degrees in the XY plane, and the drawing units UW1 to UW5 are arranged. This is because the rotating polygon mirror serving as the beam scanner provided in is rotated in the same direction. Therefore, when viewed from the transport direction of the substrate P, the drawing start positions of the odd-numbered drawing lines LL3 and LL5 and the drawing start positions of the even-numbered drawing lines LL2 and LL4 are equal to or less than the radial dimension of the spot light with respect to the Y direction. Similarly, the drawing end positions of the odd-numbered drawing lines LL1 and LL3 and the drawing end positions of the even-numbered drawing lines LL2 and LL4 are equal to or less than the radial dimension of the spot light with respect to the Y direction. Are adjacent (or coincident) with each other.

  As described above, each of the odd-numbered drawing lines LL1, LL3, LL5 is arranged in a line in the width direction of the substrate P so as to be substantially parallel to the rotation center line AX2 of the rotary drum DR on the substrate P. ing. The even-numbered drawing lines LL2 and LL4 are arranged in a line in the width direction of the substrate P so as to be substantially parallel to the rotation center line AX2 of the rotary drum DR on the substrate P.

  Next, the drawing apparatus 11 will be described with reference to FIGS. The drawing apparatus 11 includes a plurality of drawing units UW1 to UW5 described above, a branching optical system SL that branches the drawing beam LB from the light source device CNT and guides it to the drawing units UW1 to UW5, and calibration detection for performing calibration. System 31.

  The branching optical system SL branches the drawing beam LB emitted from the light source device CNT into a plurality of parts, and guides the branched drawing beams LB toward the plurality of drawing units UW1 to UW5, respectively. The branch optical system SL includes a first optical system 41 that branches the drawing beam LB emitted from the light source device CNT into two, and a second optical system that receives one of the drawing beams LB branched by the first optical system 41. 42 and a third optical system 43 on which the other drawing beam LB branched by the first optical system 41 enters. In addition, the first optical system 41 of the branch optical system SL is provided with a beam shifter mechanism 44 that two-dimensionally shifts the drawing beam LB in a plane orthogonal to the traveling axis of the drawing beam LB. The third optical system 43 is provided with a beam shifter mechanism 45 that laterally shifts the drawing beam LB two-dimensionally. In the branch optical system SL, a part on the light source device CNT side is installed on the main body frame 21, while another part on the drawing units UW1 to UW5 side is installed on the second optical surface plate 25.

  The first optical system 41 includes a half-wave plate 51, a polarizing mirror (polarizing beam splitter) 52, a beam diffuser 53, a first reflecting mirror 54, a first relay lens 55, and a second relay lens 56. , A beam shifter mechanism 44, a second reflection mirror 57, a third reflection mirror 58, a fourth reflection mirror 59, and a first beam splitter 60. 4 and 5, it is difficult to understand the positional relationship between these members, and therefore, description will be made with reference to the perspective view of FIG. 6.

  As shown in FIG. 6, the drawing beam LB emitted from the light source device CNT in the + X direction is incident on the half-wave plate 51. The half-wave plate 51 is rotatable in the incident surface of the drawing beam LB. The polarization direction of the drawing beam LB incident on the half-wave plate 51 is a predetermined polarization direction corresponding to the rotational position (angle) of the half-wave plate 51. The drawing beam LB that has passed through the half-wave plate 51 is incident on the polarizing mirror 52. The polarization mirror 52 transmits a light component in a predetermined polarization direction included in the drawing beam LB, while reflecting a light component in the other polarization direction in the + Y direction. Therefore, the intensity of the drawing beam LB reflected by the polarizing mirror 52 can be adjusted according to the rotational position of the half-wave plate 51 by the cooperation of the half-wave plate 51 and the polarizing mirror 52.

  A part (unnecessary light component) of the drawing beam LB transmitted through the polarizing mirror 52 is irradiated to a beam diffuser (light trap) 53. The beam diffuser 53 absorbs a part of the light component of the incident drawing beam LB and suppresses the leakage of the light component to the outside. Further, when adjusting various optical systems through which the drawing beam LB passes, the beam diffuser 53 absorbs many light components of the drawing beam LB because the power is too strong and dangerous if the laser power remains at its maximum. In addition, the rotational position (angle) of the half-wave plate 51 is changed to greatly attenuate the power of the drawing beam LB toward the drawing units UW1 to UW5.

  The drawing beam LB reflected by the polarizing mirror 52 in the + Y direction is reflected by the first reflecting mirror 54 in the + X direction, enters the beam shifter mechanism 44 via the first relay lens 55 and the second relay lens 56, The second reflection mirror 57 is reached.

  The first relay lens 55 converges the drawing beam LB (substantially parallel beam) from the light source device CNT to form a beam waist, and the second relay lens 56 makes the drawing beam LB diverged after convergence again into a parallel beam.

  As shown in FIG. 6, the beam shifter mechanism 44 includes two parallel flat plates (quartz) arranged along the traveling direction (+ X direction) of the drawing beam LB, and one of the parallel flat plates is a Y-axis. The other plane parallel plate is provided so as to be inclined around an axis parallel to the Z axis. The drawing beam LB is laterally shifted in the ZY plane and emitted from the beam shifter mechanism 44 in accordance with the inclination angle of each parallel plane plate.

  Thereafter, the drawing beam LB is reflected in the −Y direction by the second reflecting mirror 57, reaches the third reflecting mirror 58, is reflected in the −Z direction by the third reflecting mirror 58, and reaches the fourth reflecting mirror 59. . The drawing beam LB is reflected in the + Y direction by the fourth reflecting mirror 59 and enters the first beam splitter 60. The first beam splitter 60 reflects a part of the light amount component of the drawing beam LB in the −X direction and guides it to the second optical system 42, and guides the remaining light amount component of the drawing beam LB to the third optical system 43. In the case of the present embodiment, the drawing beam LB guided to the second optical system 42 is distributed to the three drawing units UW1, UW3, UW5, and the drawing beam LB guided to the third optical system 43 is further ahead. Is distributed to the two drawing units UW2 and UW4. Therefore, the first beam splitter 60 preferably has a ratio of reflectance to transmittance at the light splitting surface of 3: 2 (reflectance 60%, transmittance 40%), but it is not always necessary. It may be 1: 1.

  Here, the third reflection mirror 58 and the fourth reflection mirror 59 are provided at a predetermined interval on the rotation axis I of the moving mechanism 24. That is, the center line of the drawing beam LB (parallel light beam) reflected by the third reflection mirror 58 and directed to the fourth reflection mirror 59 is set to coincide with the rotation axis I (coaxial).

  The configuration up to the light source device CNT including the third reflection mirror 58 (the portion surrounded by the two-dot chain line on the upper side in the Z direction in FIG. 4) is installed on the main body frame 21 side, while the fourth reflection mirror. A configuration including a plurality of drawing units UW1 to UW5 including 59 (portion surrounded by a two-dot chain line on the lower side in the Z direction in FIG. 4) is installed on the second optical surface plate 25 side. Therefore, even if the first optical surface plate 23 and the second optical surface plate 25 rotate relative to each other by the moving mechanism 24, the third reflection mirror 58 and the fourth reflection mirror so that the drawing beam LB passes coaxially with the rotation axis I. 59, the optical path of the drawing beam LB from the fourth reflection mirror 59 to the first beam splitter 60 is not changed. Therefore, even if the second optical surface plate 25 is rotated with respect to the first optical surface plate 23 by the moving mechanism 24, the drawing beam LB emitted from the light source device CNT installed on the main body frame 21 side is used as the second optical surface plate. It is possible to suitably and stably guide the plurality of drawing units UW1 to UW5 installed on the surface plate 25 side.

  The second optical system 42 branches and guides one drawing beam LB branched by the first beam splitter 60 of the first optical system 41 toward odd-numbered drawing units UW1, UW3, UW5 described later. . The second optical system 42 includes a fifth reflection mirror 61, a second beam splitter 62, a third beam splitter 63, and a sixth reflection mirror 64.

  The drawing beam LB reflected in the −X direction by the first beam splitter 60 of the first optical system 41 is reflected in the −Y direction by the fifth reflecting mirror 61 and enters the second beam splitter 62. A part of the drawing beam LB incident on the second beam splitter 62 is reflected in the −Z direction and guided to one drawing unit UW5 having an odd number (see FIG. 5). The drawing beam LB transmitted through the second beam splitter 62 is incident on the third beam splitter 63. A part of the drawing beam LB incident on the third beam splitter 63 is reflected in the −Z direction, and is guided to one odd-numbered drawing unit UW3 (see FIG. 5). A part of the drawing beam LB transmitted through the third beam splitter 63 is reflected in the −Z direction by the sixth reflecting mirror 64 and guided to one drawing unit UW1 having an odd number (see FIG. 5). In the second optical system 42, the drawing beam LB irradiated to the odd-numbered drawing units UW1, UW3, UW5 is slightly inclined with respect to the −Z direction.

  In order to effectively use the power of the drawing beam LB, the ratio of the reflectance and transmittance of the second beam splitter 62 is 1: 2, and the ratio of the reflectance and transmittance of the third beam splitter 63 is 1: 1. It is better to approach.

  On the other hand, the third optical system 43 branches the other drawing beam LB branched by the first beam splitter 60 of the first optical system 41 toward even-numbered drawing units UW2 and UW4 described later. . The third optical system 43 includes a seventh reflection mirror 71, a beam shifter mechanism 45, an eighth reflection mirror 72, a fourth beam splitter 73, and a ninth reflection mirror 74.

  The drawing beam LB transmitted in the + Y direction by the first beam splitter 60 of the first optical system 41 is reflected in the + X direction by the seventh reflection mirror 71, passes through the beam shifter mechanism 45, and enters the eighth reflection mirror 72. To do. The beam shifter mechanism 45 is composed of two parallel plane plates (quartz) that can be tilted similarly to the beam shifter mechanism 44, and the drawing beam LB traveling in the + X direction toward the eighth reflecting mirror 72 is laterally moved in the ZY plane. Shift.

  The drawing beam LB reflected in the −Y direction by the eighth reflecting mirror 72 is incident on the fourth beam splitter 73. A part of the drawing beam LB irradiated to the fourth beam splitter 73 is reflected in the −Z direction and guided to the even-numbered drawing unit UW4 (see FIG. 5). The drawing beam LB that has passed through the fourth beam splitter 73 is reflected in the −Z direction by the ninth reflecting mirror 74 and guided to one even-numbered drawing unit UW2. In the third optical system 43, the drawing beam LB irradiated to the even-numbered drawing units UW2 and UW4 is slightly inclined with respect to the −Z direction.

  Thus, in the branch optical system SL, the drawing beam LB from the light source device CNT is branched into a plurality of parts toward the plurality of drawing units UW1 to UW5. At this time, the first beam splitter 60, the second beam splitter 62, the third beam splitter 63, and the fourth beam splitter 73 have the same beam intensity of the drawing beam LB irradiated to the plurality of drawing units UW1 to UW5. As described above, the reflectance (transmittance) is set to an appropriate reflectance according to the number of branches of the drawing beam LB.

  By the way, the beam shifter mechanism 44 is disposed between the second relay lens 56 and the second reflection mirror 57. The beam shifter mechanism 44 can finely adjust all the positions of the drawing lines LL <b> 1 to LL <b> 5 formed on the substrate P on the order of μm within the drawing surface of the substrate P.

  Further, the beam shifter mechanism 45 finely draws even-numbered second drawing lines LL2 and fourth drawing lines LL4 on the drawing surface of the substrate P in the μm order among the drawing lines LL1 to LL5 formed on the substrate P. Can be adjusted.

  Further, the drawing units UW1 to UW5 will be described with reference to FIGS. As shown in FIG. 4 (and FIG. 1), the plurality of drawing units UW1 to UW5 are arranged in two rows in the circumferential direction of the rotary drum DR with the center surface p3 interposed therebetween. The plurality of drawing units UW1 to UW5 have the first drawing on the side where the first, third, and fifth drawing lines LL1, LL3, and LL5 are arranged (the −X direction side in FIG. 5) across the center plane p3. A unit UW1, a third drawing unit UW3, and a fifth drawing unit UW5 are arranged. The first drawing unit UW1, the third drawing unit UW3, and the fifth drawing unit UW5 are arranged at a predetermined interval in the Y direction. The plurality of drawing units UW1 to UW5 are arranged on the side where the second and fourth drawing lines LL2 and LL4 are arranged (+ X direction side in FIG. 5) with the center plane p3 interposed therebetween. Four drawing units UW4 are arranged. The second drawing unit UW2 and the fourth drawing unit UW4 are arranged at a predetermined interval in the Y direction. At this time, as shown in FIG. 2 or FIG. 5, the second drawing unit UW2 is located between the first drawing unit UW1 and the third drawing unit UW3 in the Y direction. Similarly, the third drawing unit UW3 is located between the second drawing unit UW2 and the fourth drawing unit UW4 in the Y direction. The fourth drawing unit UW4 is located between the third drawing unit UW3 and the fifth drawing unit UW5 in the Y direction. As shown in FIG. 4, the first drawing unit UW1, the third drawing unit UW3, the fifth drawing unit UW5, the second drawing unit UW2, and the fourth drawing unit UW4 have a center plane p3 as viewed from the Y direction. It is arranged symmetrically in the center.

  Next, the configuration of the optical system in each of the drawing units UW1 to UW5 will be described with reference to FIG. Since the drawing units UW1 to UW5 have the same configuration, the first drawing unit UW1 (hereinafter simply referred to as the drawing unit UW1) will be described as an example.

  The drawing unit UW1 shown in FIG. 4 includes an optical deflector 81, a polarization beam splitter PBS, and a quarter wavelength plate so as to scan the spot light of the drawing beam LB along the drawing line LL1 (first drawing line LL1). 82, a scanner 83, a bending mirror 84, an f-θ lens system 85, and a Y magnification correcting optical member (lens group) 86B including a cylindrical lens 86. A calibration detection system 31 is provided adjacent to the deflection beam splitter PBS.

  As the optical deflector 81, for example, an acousto-optic device (AOM: Acousto Optic Modulator) is used. The AOM generates an ON state in which the first-order diffracted light of the incident drawing beam is generated in a predetermined diffraction angle direction and OFF that does not generate the first-order diffracted light depending on whether or not a diffraction grating is generated by ultrasonic waves (high-frequency signals) inside. It is an optical switching element that switches to a state.

  The control unit 16 shown in FIG. 1 switches projection / non-projection of the drawing beam LB onto the substrate P at high speed by switching the optical deflector 81 ON / OFF. Specifically, the light deflector 81 is irradiated with one of the drawing beams LB distributed by the branch optical system SL with a slight inclination with respect to the −Z direction via the relay lens 91. When the optical deflector 81 is switched OFF, the drawing beam LB goes straight in an inclined state and is shielded by a light shielding plate 92 provided at the end after passing through the optical deflector 81. On the other hand, when the optical deflector 81 is switched to ON, the drawing beam LB (first-order diffracted light) is deflected in the −Z direction, passes through the optical deflector 81, and is on the Z direction of the optical deflector 81. Irradiation is performed on the polarization beam splitter PBS provided. Therefore, when the optical deflector 81 is switched ON, the spot light of the drawing beam LB is projected onto the substrate P, and when the optical deflector 81 is switched OFF, the spot light of the drawing beam LB is applied to the substrate P. Not projected.

  Since the AOM is disposed at the position of the beam waist of the drawing beam LB converged by the relay lens 91, the drawing beam LB (first-order diffracted light) emitted from the optical deflector 81 diverges. Therefore, a relay lens 93 that returns the diverging drawing beam LB to a parallel light beam is provided after the optical deflector 81.

  The polarization beam splitter PBS reflects the drawing beam LB irradiated from the optical deflector 81 through the relay lens 93. The drawing beam LB emitted from the polarization beam splitter PBS is a quarter-wave plate 82, a scanner 83 (rotating polygon mirror), a bending mirror 84, an f-θ lens system 85, a Y magnification correcting optical member 86B, and a cylindrical lens. In the order 86, the light is condensed on the substrate P as scanning spot light.

  On the other hand, the polarization beam splitter PBS is projected onto the outer peripheral surface of the substrate P or the rotating drum DR below it in cooperation with the quarter wavelength plate 82 provided between the polarization beam splitter PBS and the scanner 83. Since the reflected light of the drawing beam LB moves backward in the order of the Y magnification correcting optical member 86B, the cylindrical lens 86, the f-θ lens system 85, the bending mirror 84, and the scanner 83, the reflected light is transmitted. be able to. That is, the drawing beam LB irradiated from the optical deflector 81 to the polarization beam splitter PBS is a laser beam that becomes S-polarized linearly polarized light and is reflected by the polarization beam splitter PBS. The drawing beam LB reflected by the polarization beam splitter PBS passes through the quarter-wave plate 82, the scanner 83, the bending mirror 84, the f-θ lens system 85, the Y magnification correcting optical member 86B, and the cylindrical lens 86. Then, the spot light of the drawing beam LB irradiated onto the substrate P and condensed on the substrate P is circularly polarized. The reflected light from the substrate P (or the outer peripheral surface of the rotating drum DR) travels backward through the transmission path of the drawing beam LB and passes through the quarter-wave plate 82 again, thereby becoming laser light that becomes P-polarized linearly polarized light. It becomes. For this reason, the reflected light reaching the polarization beam splitter PBS from the substrate P (or the rotating drum DR) is transmitted through the polarization beam splitter PBS and irradiated to the photoelectric sensor 31Cs of the calibration detection system 31 via the relay lens 94.

  As described above, the polarization beam splitter PBS is an optical splitter disposed between the scanning optical system including the scanner 83 and the calibration detection system 31. Since the calibration detection system 31 shares a part of the optical transmission system of the drawing beam LB to the substrate P, it becomes an easy and compact optical system.

  As shown in FIGS. 4 and 7, the scanner 83 includes a reflection mirror 96, a rotating polygon mirror (rotating polygon mirror) 97, and an origin detector 98. The drawing beam LB (parallel light beam) that has passed through the quarter-wave plate 82 is reflected in the XY plane by the reflecting mirror 96 through the cylindrical lens 95 and is irradiated onto the rotating polygon mirror 97. The rotating polygon mirror 97 includes a rotating shaft 97a extending in the Z direction and a plurality of reflecting surfaces 97b formed around the rotating shaft 97a. The rotating polygon mirror 97 rotates the rotation axis 97a in a predetermined rotation direction so that the reflection angle of the drawing beam LB (the beam whose intensity is modulated by the optical deflector 81) irradiated to the reflection surface 97b is changed to the XY plane. Thus, the reflected drawing beam LB is collected into spot light by the bending mirror 84, the f-θ lens system 85, and the second cylindrical lens 86 (and the Y magnification correcting optical member 86B). Scanned along the drawing line LL1 (similarly LL2 to LL5) on the substrate P. The origin detector 98 detects the origin of the drawing beam LB scanned along the drawing line LL1 (similarly, LL2 to LL5) of the substrate P. The origin detector 98 is disposed on the opposite side of the reflecting mirror 96 with the drawing beam LB reflected by each reflecting surface 97b interposed therebetween.

  In FIG. 7, only the photoelectric detector is illustrated as the origin detector 98 for simplicity of explanation, but actually, the detection beam is projected toward the reflecting surface 97b of the rotating polygon mirror 97 on which the drawing beam LB is projected. A detection light source such as an LED or a semiconductor laser is provided, and the origin detector 98 photoelectrically detects the reflected light of the detection beam on the reflecting surface 97b through a thin slit.

  As a result, the origin detector 98 outputs a pulse signal representing the origin always before a timing at which the spot light is irradiated to the drawing start position of the drawing line LL1 (LL2 to LL5) on the substrate P. It is set to be.

  The drawing beam LB irradiated from the scanner 83 to the bending mirror 84 is reflected in the −Z direction by the bending mirror 84 and enters the f-θ lens system 85 and the cylindrical lens 86 (and the Y magnification correcting optical member 86B). .

  By the way, if each reflecting surface 97b of the rotating polygon mirror 97 is not strictly parallel to the center line of the rotating shaft 97a but is slightly tilted (tilted), it is caused by the spot light projected on the substrate P. The drawing lines (LL1 to LL5) are blurred in the X direction on the substrate P for each reflecting surface 97b. Therefore, by using the two cylindrical lenses 95 and 86 with reference to FIG. 8, the blurring of the drawing lines LL1 to LL5 in the X direction with respect to the surface tilt of each reflecting surface 97b of the rotating polygon mirror 97 is reduced. Or explain that it can be resolved.

  The left side of FIG. 8 shows a state in which the optical paths of the cylindrical lens 95, the scanner 83, the f-θ lens system 85, and the cylindrical lens 86 are expanded on the XY plane, and the right side of FIG. 8 expands the optical path in the XZ plane. Shows how it was done. As a basic optical arrangement, the reflecting surface 97b to which the drawing beam LB of the rotating polygon mirror 97 is irradiated is arranged so as to be the entrance pupil position (front focal position) of the f-θ lens system 85. As a result, the incident angle of the drawing beam LB incident on the f-θ lens system 85 becomes θp with respect to the rotational angle θp / 2 of the rotating polygon mirror 97, and the substrate P (irradiated surface is proportional to the incident angle θp). ) The image height position of the spot light projected on is determined. Further, by setting the reflecting surface 97b to the front focal position of the f-θ lens system 85, the drawing beam LB projected onto the substrate P is in a telecentric state (the main part of the drawing beam that becomes spot light) at any position on the drawing line. The light beam is always parallel to the optical axis AXf of the f-θ lens system 85).

  As shown in FIG. 8, the two cylindrical lenses 95 and 86 function as parallel flat glass having zero refractive power (power) in a plane (XY plane) perpendicular to the rotation axis 97a of the rotating polygon mirror 97. In the Z direction (in the XZ plane) in which the rotation shaft 97a extends, the lens functions as a convex lens having a constant positive refractive power. The drawing beam LB (substantially parallel light beam) incident on the first cylindrical lens 95 has a circular shape of about several millimeters, but the focal position of the cylindrical lens 95 in the XZ plane is rotated via the reflection mirror 96. When set on the reflection surface 97b of the polygon mirror 97, a slit-shaped spot light having a beam width of several mm in the XY plane and converged in the Z direction extends in the rotation direction on the reflection surface 97b and is condensed. To do.

  The drawing beam LB reflected by the reflecting surface 97b of the rotating polygon mirror 97 is a parallel light beam in the XY plane, but becomes a divergent light beam in the XZ plane (the direction in which the rotation shaft 97a extends), and the f-θ lens system 85. Is incident on. For this reason, the drawing beam LB immediately after exiting the f-θ lens system 85 is substantially a parallel light beam in the XZ plane (the direction in which the rotation shaft 97a extends), but due to the action of the second cylindrical lens 86. In the XZ plane, that is, on the substrate P, the spot light is also condensed in the transport direction of the substrate P orthogonal to the direction in which the drawing lines LL1 to LL5 extend. As a result, a small circular spot light is projected on each drawing line on the substrate P.

  By providing the cylindrical lens 86, the reflecting surface 97b of the rotating polygon mirror 97 and the substrate P (irradiated surface) are optically set in an image conjugate relationship within the XZ plane as shown on the right side of FIG. Can do. Therefore, even if each reflecting surface 97b of the rotating polygon mirror 97 has a tilt error with respect to the non-scanning direction (direction in which the rotating shaft 97a extends) orthogonal to the scanning direction of the drawing beam LB, the drawing line on the substrate P The positions of (LL1 to LL5) do not shake in the non-scanning direction of the spot light (the transport direction of the substrate P). As described above, by providing the cylindrical lenses 95 and 86 before and after the rotating polygon mirror 97, it is possible to configure a surface tilt correction optical system of the polygon reflecting surface with respect to the non-scanning direction.

  Here, as shown in FIG. 7, the scanners 83 of the plurality of drawing units UW1 to UW5 have a symmetric configuration with respect to the center plane p3. In the plurality of scanners 83, three scanners 83 corresponding to the drawing units UW1, UW3, and UW5 are arranged on the upstream side in the rotation direction of the rotary drum DR (the −X direction side in FIG. 7), and the drawing units UW2, Two scanners 83 corresponding to UW4 are arranged on the downstream side in the rotation direction of the rotary drum DR (the + X direction side in FIG. 7). The three upstream scanners 83 and the two downstream scanners 83 are arranged to face each other across the center plane p3. As described above, the three upstream scanners 83 and the two downstream scanners 83 are in an arrangement relationship rotated by 180 ° about the rotation axis I (Z axis). For this reason, for example, when the rotating polygon mirror 97 is irradiated with the drawing beam LB while the three upstream rotating polygon mirrors 97 rotate counterclockwise, the drawing beam LB reflected by the rotating polygon mirror 97 is drawn. Scanning is performed in a predetermined scanning direction (for example, + Y direction in FIG. 7) from the start position to the drawing end position. On the other hand, when the rotating polygon mirror 97 is irradiated with the drawing beam LB while the two downstream rotating polygon mirrors 97 rotate counterclockwise, the drawing beam LB reflected by the rotating polygon mirror 97 is changed to the drawing start position. Is scanned in the scanning direction opposite to the upstream three rotating polygon mirrors 97 (for example, in the −Y direction in FIG. 7) toward the drawing end position.

  Here, when viewed in the XZ plane of FIG. 4, the axis of the drawing beam LB reaching the substrate P from the odd-numbered drawing units UW1, UW3, UW5 is in a direction coinciding with the installation direction line Le1. That is, the installation orientation line Le1 is a line connecting the odd-numbered drawing lines LL1, LL3, LL5 and the rotation center line AX2 in the XZ plane. Similarly, when viewed in the XZ plane of FIG. 4, the axis of the drawing beam LB reaching the substrate P from the even-numbered drawing units UW2 and UW4 is in a direction that coincides with the installation orientation line Le2. That is, the installation orientation line Le2 is a line connecting the even-numbered drawing lines LL2 and LL4 and the rotation center line AX2 in the XZ plane. For this reason, each traveling direction (principal ray) of the drawing beam LB projected as spot light on the substrate P is set so as to be directed to the rotation center line AX2 of the rotating drum DR.

  The Y magnification correcting optical member 86B is disposed between the f-θ lens system 85 and the substrate P. The Y magnification correcting optical member 86B can enlarge or reduce the drawing lines LL1 to LL5 formed by the respective drawing units UW1 to UW5 isotropically by a minute amount in the Y direction.

  Specifically, a transparent parallel flat plate (quartz) having a certain thickness covering each of the drawing lines LL1 to LL5 is mechanically bent (bending) with respect to the direction in which the drawing line extends to multiply the drawing line in the Y direction. A mechanism for changing the (scanning length) or a mechanism for changing the magnification (scanning length) in the Y direction of the drawing line by moving a part of the three lens systems of the convex lens, the concave lens, and the convex lens in the optical axis direction. Etc. can be used.

  In the drawing apparatus 11 configured as described above, a predetermined pattern is drawn on the substrate P by controlling each unit by the control unit 16. That is, the control unit 16 performs ON / OFF modulation of the optical deflector 81 based on CAD information of a pattern to be drawn on the substrate P during the period in which the drawing beam LB projected on the substrate P is scanned in the scanning direction. By doing so, the drawing beam LB is deflected, and a pattern is drawn on the photosensitive layer of the substrate P. Further, the control unit 16 synchronizes the scanning direction of the drawing beam LB that scans along the drawing line LL1 and the movement in the transport direction of the substrate P due to the rotation of the rotary drum DR, so that the drawing line in the exposure region A7 is synchronized. A predetermined pattern is drawn on the portion corresponding to LL1.

  Next, the alignment microscopes AM1 and AM2 will be described with reference to FIG. 9 together with FIG. The alignment microscopes AM1 and AM2 detect an alignment mark formed in advance on the substrate P, or a reference mark or reference pattern formed on the rotary drum DR. Hereinafter, the alignment mark of the substrate P and the reference mark or reference pattern of the rotating drum DR are simply referred to as a mark. The alignment microscopes AM1 and AM2 are used to align (align) the substrate P and a predetermined pattern drawn on the substrate P, and to calibrate the rotary drum DR and the drawing device 11.

  The alignment microscopes AM1 and AM2 are provided upstream of the drawing lines LL1 to LL5 formed by the drawing apparatus 11 in the rotation direction of the rotary drum DR (the conveyance direction of the substrate P). Further, the alignment microscope AM1 is arranged on the upstream side in the rotation direction of the rotary drum DR as compared with the alignment microscope AM2.

  The alignment microscopes AM1 and AM2 project the illumination light onto the substrate P or the rotating drum DR, and at the same time, an objective lens system GA (a representative lens of the alignment microscope AM2 in FIG. 9) serving as a detection probe for entering the light generated by the mark. Imaging system GD (represented in FIG. 9) that captures a mark image (bright field image, dark field image, fluorescent image, etc.) received through the objective lens system GA with a two-dimensional CCD, CMOS, etc. And an imaging system GD4 of the alignment microscope AM2. The alignment illumination light is light in a wavelength region that has little sensitivity to the photosensitive layer on the substrate P, for example, light having a wavelength of about 500 to 800 nm.

  A plurality of (for example, three) alignment microscopes AM1 are provided in a line in the Y direction (the width direction of the substrate P). Similarly, a plurality of (for example, three) alignment microscopes AM2 are provided in a line in the Y direction (the width direction of the substrate P). That is, a total of six alignment microscopes AM1 and AM2 are provided.

  In FIG. 3, for easy understanding, the arrangement of the objective lens systems GA1 to GA3 of the three alignment microscopes AM1 among the objective lens systems GA of the six alignment microscopes AM1 and AM2 is shown. Observation regions (detection positions) Vw1 to Vw3 on the substrate P (or the outer peripheral surface of the rotating drum DR) by the objective lens systems GA1 to GA3 of the three alignment microscopes AM1 are, as shown in FIG. They are arranged at predetermined intervals in the parallel Y direction. As shown in FIG. 9, the optical axes La1 to La3 of the objective lens systems GA1 to GA3 passing through the centers of the observation regions Vw1 to Vw3 are all parallel to the XZ plane. Similarly, the observation regions Vw4 to Vw6 on the substrate P (or the outer peripheral surface of the rotating drum DR) by the objective lens systems GA of the three alignment microscopes AM2 are Y parallel to the rotation center line AX2, as shown in FIG. Arranged at predetermined intervals in the direction. As shown in FIG. 9, the optical axes La4 to La6 of the objective lens systems GA passing through the centers of the observation regions Vw4 to Vw6 are all parallel to the XZ plane. The observation areas Vw1 to Vw3 and the observation areas Vw4 to Vw6 are arranged at a predetermined interval in the rotation direction of the rotary drum DR.

  The mark observation regions Vw1 to Vw6 by the alignment microscopes AM1 and AM2 are set to a range of about 500 to 200 μm square, for example, on the substrate P and the rotating drum DR. Here, the optical axes La1 to La3 of the alignment microscope AM1, that is, the optical axes La1 to La3 of the objective lens system GA, are set in the same direction as the installation orientation line Le3 extending in the radial direction of the rotary drum DR from the rotation center line AX2. The Thus, the installation orientation line Le3 is a line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2 when viewed in the XZ plane of FIG. Similarly, the optical axes La4 to La6 of the alignment microscope AM2, that is, the optical axes La4 to La6 of the objective lens system GA, are set in the same direction as the installation direction line Le4 extending from the rotation center line AX2 in the radial direction of the rotary drum DR. The As described above, the installation orientation line Le4 is a line connecting the observation regions Vw4 to Vw6 of the alignment microscope AM2 and the rotation center line AX2 when viewed in the XZ plane of FIG. At this time, since the alignment microscope AM1 is arranged upstream of the rotation direction of the rotary drum DR as compared with the alignment microscope AM2, the angle formed by the center plane p3 and the installation orientation line Le3 is the same as that of the center plane p3. It is larger than the angle formed by the installation orientation line Le4.

  On the substrate P, as shown in FIG. 3, an exposure region A7 drawn by each of the five drawing lines LL1 to LL5 is arranged with a predetermined interval in the X direction. Around the exposure area A7 on the substrate P, a plurality of alignment marks Ks1 to Ks3 (hereinafter abbreviated as marks) for alignment are formed in a cross shape, for example.

  In FIG. 3, marks Ks1 are provided at a constant interval in the X direction in the peripheral area on the −Y side of the exposure area A7, and marks Ks3 are constant in the X direction on the peripheral area on the + Y side of the exposure area A7. Provided at intervals. Further, the mark Ks2 is provided at the center in the Y direction in a blank area between two exposure areas A7 adjacent in the X direction.

  The marks Ks1 are sequentially captured while the substrate P is being sent in the observation region Vw1 of the objective lens system GA1 of the alignment microscope AM1 and in the observation region Vw4 of the objective lens system GA of the alignment microscope AM2. Formed. Further, the mark Ks3 is sequentially captured while the substrate P is being sent in the observation region Vw3 of the objective lens system GA3 of the alignment microscope AM1 and in the observation region Vw6 of the objective lens system GA of the alignment microscope AM2. Formed. Further, the marks Ks2 are sequentially captured while the substrate P is being sent in the observation region Vw2 of the objective lens system GA2 of the alignment microscope AM1 and in the observation region Vw5 of the objective lens system GA of the alignment microscope AM2. It is formed so that.

  Therefore, among the three alignment microscopes AM1 and AM2, the alignment microscopes AM1 and AM2 on both sides in the Y direction of the rotating drum DR constantly observe or detect the marks Ks1 and Ks3 formed on both sides in the width direction of the substrate P. be able to. Of the three alignment microscopes AM1 and AM2, the center alignment microscope AM1 and AM2 in the Y direction of the rotary drum DR is a mark formed in a blank portion between the exposure areas A7 drawn on the substrate P. Ks2 can always be observed or detected.

  Here, since the exposure apparatus EX is a so-called multi-beam type drawing apparatus, a plurality of patterns drawn on the substrate P are drawn in the Y direction by the drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5. Therefore, calibration is required to suppress the joining accuracy of the plurality of drawing units UW1 to UW5 within an allowable range. In addition, the relative positional relationship of the observation regions Vw1 to Vw6 of the alignment microscopes AM1 and AM2 with respect to the drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5 needs to be precisely determined by baseline management. Calibration is also necessary for the baseline management.

  In the calibration for confirming the joining accuracy by the plurality of drawing units UW1 to UW5 and the calibration for the baseline management of the alignment microscopes AM1 and AM2, at least a part of the outer peripheral surface of the rotary drum DR supporting the substrate P is used. It is necessary to provide a reference mark and a reference pattern. Therefore, as shown in FIG. 10, the exposure apparatus EX uses a rotating drum DR having a reference mark or a reference pattern on the outer peripheral surface.

  The rotary drum DR is formed with scale portions GPa and GPb constituting a part of a rotational position detection mechanism 14 described later in the same manner as in FIGS. In addition, the rotary drum DR is provided with engraved restriction bands CLa and CLb having narrow grooves by concave grooves or convex rims on the inner sides of the scale parts GPa and GPb. The width in the Y direction of the substrate P is set to be smaller than the interval in the Y direction between the two regulation bands CLa and CLb, and the substrate P is sandwiched between the regulation bands CLa and CLb on the outer peripheral surface of the rotary drum DR. It is supported in close contact with the inner region.

  The rotary drum DR has a plurality of line patterns RL1 (line patterns) inclined at +45 degrees with respect to the rotation center line AX2 and −45 with respect to the rotation center line AX2 on the outer peripheral surface sandwiched between the regulation bands CLa and CLb. A mesh-like reference pattern (which can also be used as a reference mark) RMP is provided in which a plurality of line patterns RL2 (line patterns) inclined at degrees are repeatedly engraved at a constant pitch (period) Pf1, Pf2. Note that the widths of the line patterns RL1 and RL2 are LW.

  The reference pattern RMP is an oblique pattern (an oblique lattice pattern) that is uniform over the entire surface so that the frictional force, the tension of the substrate P, and the like do not change at the portion where the substrate P and the outer peripheral surface of the rotary drum DR come into contact. Yes. Note that the line patterns RL1 and RL2 are not necessarily inclined at 45 degrees, and may be a vertical and horizontal mesh pattern in which the line pattern RL1 is parallel to the Y axis and the line pattern RL2 is parallel to the X axis. Further, it is not necessary to intersect the line patterns RL1 and RL2 at 90 degrees, and the rectangular area surrounded by the two adjacent line patterns RL1 and the two adjacent line patterns RL2 is not a square (or a rectangle). The line patterns RL1 and RL2 may be crossed at an angle that results in a rhombus.

  Next, the rotational position detection mechanism 14 will be described with reference to FIGS. 3, 4 and 9. As shown in FIG. 9, the rotational position detection mechanism 14 optically detects the rotational position of the rotary drum DR, and an encoder system using, for example, a rotary encoder is applied. The rotational position detection mechanism 14 includes a scale measuring unit GPa, GPb provided at both ends of the rotating drum DR, and a plurality of encoder heads EN1, EN2, EN3, EN4 facing each of the scale units GPa, GPb. It is. 4 and 9, only four encoder heads EN1, EN2, EN3, and EN4 that face the scale part GPa are shown, but similar encoder heads EN1, EN2, EN3, and EN4 face the scale part GPb. Arranged. The rotational position detection mechanism 14 includes displacement meters YN1, YN2, YN3, and YN4 that can detect a shake (a slight displacement in the Y direction in which the rotational center line AX2 extends) at both ends of the rotational drum DR.

  Scales of the scale parts GPa and GPb are respectively formed in an annular shape over the entire circumferential direction of the outer peripheral surface of the rotary drum DR. The scale parts GPa and GPb are diffraction gratings in which concave or convex grating lines are formed at a constant pitch (for example, 20 μm) in the circumferential direction of the outer peripheral surface of the rotary drum DR, and are configured as incremental scales. For this reason, the scale parts GPa and GPb rotate integrally with the rotary drum DR around the rotation center line AX2.

  The board | substrate P is comprised so that it may wind around the inner side which avoided the scale parts GPa and GPb of the both ends of the rotating drum DR, ie, inner side of the regulation bands CLa and CLb. When a strict arrangement relationship is required, the outer peripheral surfaces of the scale portions GPa and GPb and the outer peripheral surface of the portion of the substrate P wound around the rotary drum DR are on the same plane (same radius from the center line AX2). Set. For this purpose, the outer peripheral surfaces of the scale portions GPa and GPb may be made higher by the thickness of the substrate P in the radial direction than the outer peripheral surface for winding the substrate of the rotary drum DR. For this reason, the outer peripheral surfaces of the scale portions GPa and GPb formed on the rotary drum DR can be set to have substantially the same radius as the outer peripheral surface of the substrate P. Therefore, the encoder heads EN1, EN2, EN3, and EN4 can detect the scale portions GPa and GPb at the same radial position as the drawing surface on the substrate P wound around the rotary drum DR. The Abbe error caused by the difference in the radial direction of the rotating system can be reduced.

  The encoder heads EN1, EN2, EN3, and EN4 are arranged around the scale portions GPa and GPb, respectively, as viewed from the rotation center line AX2, and are at different positions in the circumferential direction of the rotary drum DR. The encoder heads EN1, EN2, EN3, EN4 are connected to the control unit 16. The encoder heads EN1, EN2, EN3, and EN4 project measurement light beams toward the scale portions GPa and GPb, and photoelectrically detect the reflected light beams (diffracted light), thereby causing the scale portions GPa and GPb in the circumferential direction. A detection signal (for example, a two-phase signal having a phase difference of 90 degrees) corresponding to the position change is output to the control unit 16. The control unit 16 interpolates and digitally processes the detection signal with a counter circuit (not shown), thereby changing the angular change of the rotating drum DR, that is, the change in the circumferential position of the outer peripheral surface with submicron resolution. It can be measured. The controller 16 can also measure the transport speed of the substrate P from the change in the angle of the rotary drum DR.

  Further, as shown in FIGS. 4 and 9, the encoder head EN1 is disposed on the installation direction line Le1. The installation azimuth line Le1 is a line connecting the projection area (reading position) of the measurement light beam onto the scale part GPa (GPb) by the encoder head EN1 and the rotation center line AX2 in the XZ plane. Further, as described above, the installation direction line Le1 is a line connecting the drawing lines LL1, LL3, LL5 and the rotation center line AX2 in the XZ plane. From the above, the line connecting the reading position of the encoder head EN1 and the rotation center line AX2 and the line connecting the drawing lines LL1, LL3, LL5 and the rotation center line AX2 are the same azimuth line.

  Similarly, as shown in FIGS. 4 and 9, the encoder head EN2 is disposed on the installation orientation line Le2. The installation orientation line Le2 is a line connecting the projection area (reading position) of the measurement light beam on the scale part GPa (GPb) by the encoder head EN2 and the rotation center line AX2 in the XZ plane. Further, as described above, the installation direction line Le2 is a line connecting the drawing lines LL2 and LL4 and the rotation center line AX2 in the XZ plane. From the above, the line connecting the reading position of the encoder head EN2 and the rotation center line AX2 and the line connecting the drawing lines LL2, LL4 and the rotation center line AX2 are the same azimuth line.

  Also, as shown in FIGS. 4 and 9, the encoder head EN3 is disposed on the installation direction line Le3. The installation azimuth line Le3 is a line connecting the projection area (reading position) of the measurement light beam onto the scale part GPa (GPb) by the encoder head EN3 and the rotation center line AX2 in the XZ plane. Further, as described above, the installation orientation line Le3 is a line connecting the observation areas Vw1 to Vw3 of the substrate P by the alignment microscope AM1 and the rotation center line AX2 in the XZ plane. From the above, the line connecting the reading position of the encoder head EN3 and the rotation center line AX2 and the line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2 have the same orientation when viewed in the XZ plane. It is a line.

  Similarly, as shown in FIGS. 4 and 9, the encoder head EN4 is disposed on the installation orientation line Le4. The installation azimuth line Le4 is a line connecting the projection area (reading position) of the measurement light beam onto the scale part GPa (GPb) by the encoder head EN4 and the rotation center line AX2 in the XZ plane. Further, as described above, the installation orientation line Le4 is a line connecting the observation areas Vw4 to Vw6 of the substrate P by the alignment microscope AM2 and the rotation center line AX2 in the XZ plane. From the above, the line connecting the reading position of the encoder head EN4 and the rotation center line AX2 and the line connecting the observation areas Vw4 to Vw6 of the alignment microscope AM2 and the rotation center line AX2 have the same orientation when viewed in the XZ plane. It is a line.

  When the installation directions (angle directions in the XZ plane with the rotation center line AX2 as the center) of the encoder heads EN1, EN2, EN3, EN4 are represented by installation direction lines Le1, Le2, Le3, Le4, as shown in FIG. The plurality of drawing units UW1 to UW5 and encoder heads EN1 and EN2 are arranged so that the installation orientation lines Le1 and Le2 are at an angle ± θ ° with respect to the center plane p3. The installation azimuth line Le1 and the installation azimuth line Le2 are such that the encoder head EN1 and the encoder head EN2 are installed in a spatially non-interfering state around the scale of the scale part GPa (GPb).

  The displacement meters YN1, YN2, YN3, and YN4 are respectively arranged around the scale portion GPa or GPb as viewed from the rotation center line AX2, and are at different positions in the circumferential direction of the rotary drum DR. The displacement meters YN1, YN2, YN3, YN4 are connected to the control unit 16.

  The displacement gauges YN1, YN2, YN3, and YN4 can reduce the Abbe error by detecting the displacement at a position as close to the radial direction as possible with respect to the drawing surface on the substrate P wound around the rotary drum DR. The displacement gauges YN1, YN2, YN3, and YN4 project a measurement light beam toward one of both ends of the rotary drum DR, and photoelectrically detect the reflected light beam (or diffracted light), thereby detecting the rotation drum DR. A detection signal corresponding to a change in position of both ends in the Y direction (width direction of the substrate P) is output to the control unit 16. The control unit 16 digitally processes the detection signal by a measurement circuit (not shown) (a counter circuit, an interpolation circuit, etc.), thereby substituting the displacement change in the Y direction of the rotating drum DR (and the substrate P) with submicron resolution. Can be measured. The control unit 16 can also measure the swing of the rotating drum DR from one change at both ends of the rotating drum DR.

  The displacement gauges YN1, YN2, YN3, and YN4 may be one of the four, but for measurement of the rotation of the rotating drum DR, if there are three or more of the four, both end portions of the rotating drum DR. It is possible to grasp the movement (dynamic inclination change, etc.) of one of the surfaces. When the control unit 16 can constantly measure marks and patterns on the substrate P (or marks on the rotary drum DR) by the alignment microscopes AM1 and AM2, the displacement meters YN1, YN2, YN3, and YN4 are omitted. May be.

  Here, the control unit 16 detects the rotation angle positions of the scale units (rotating drums DR) GPa and GPb by the encoder heads EN1 and EN2, and based on the detected rotation angle positions, the odd-numbered and even-numbered drawing units UW1. Drawing is performed by ~ UW5. That is, the control unit 16 performs ON / OFF modulation of the optical deflector 81 based on CAD information of a pattern to be drawn on the substrate P during the period in which the drawing beam LB projected on the substrate P is scanned in the scanning direction. However, by performing the ON / OFF modulation timing by the optical deflector 81 based on the detected rotation angle position, the pattern can be accurately drawn on the photosensitive layer of the substrate P.

  Further, the control unit 16 rotates the scale units GPa and GPb (rotary drum DR) detected by the encoder heads EN3 and EN4 when the alignment marks Ks1 to Ks3 on the substrate P are detected by the alignment microscopes AM1 and AM2. By storing the angular position, the correspondence between the positions of the alignment marks Ks1 to Ks3 on the substrate P and the rotational angular position of the rotary drum DR can be obtained. Similarly, the control unit 16 rotates the scale units GPa and GPb (rotating drum DR) detected by the encoder heads EN3 and EN4 when the reference pattern RMP on the rotating drum DR is detected by the alignment microscopes AM1 and AM2. By storing the angular position, the correspondence between the position of the reference pattern RMP on the rotary drum DR and the rotational angular position of the rotary drum DR can be obtained. As described above, the alignment microscopes AM1 and AM2 can precisely measure the rotation angle position (or circumferential position) of the rotary drum DR at the moment when the mark is sampled in the observation regions Vw1 to Vw6. In the exposure apparatus EX, based on the measurement result, the substrate P and a predetermined pattern drawn on the substrate P are aligned (aligned), and the rotary drum DR and the drawing apparatus 11 are calibrated. To do.

  Note that the actual sampling corresponds to the position of the mark on the substrate P and the position of the reference pattern on the rotating drum DR in which the rotational angle position of the rotating drum DR measured by the encoder heads EN3 and EN4 is roughly known in advance. When the angle position is reached, the image information output from the imaging systems GD of the alignment microscopes AM1 and AM2 is written into the image memory or the like at high speed. That is, the image information output from each imaging system GD is sampled using the rotation angle position of the rotary drum DR measured by the encoder heads EN3 and EN4 as a trigger. Apart from this, in response to each pulse of the clock signal having a constant frequency, the rotation angle position (counter measurement value) of the rotary drum DR measured by the encoder heads EN3 and EN4 and the image output from each imaging system GD There is also a method of sampling information simultaneously.

  Further, since the mark on the substrate P and the reference pattern RMP on the rotary drum DR are moved in one direction with respect to the observation regions Vw1 to Vw6, when sampling image information output from each imaging system GD, It is desirable to use a CCD or CMOS image sensor having a high shutter speed. Along with this, it is necessary to increase the luminance of the illumination light that illuminates the observation regions Vw1 to Vw6, and it is conceivable to use a strobe light, a high-intensity LED, or the like as the illumination light source of the alignment microscopes AM1, AM2.

  FIG. 11 is an explanatory diagram showing a positional relationship between a drawing line and a drawing pattern on the substrate. The drawing units UW1 to UW5 draw the patterns PT1 to PT5 by scanning the spot light of the drawing beam LB along the drawing lines LL1 to LL5. The drawing start positions OC1 to OC5 of the drawing lines LL1 to LL5 become the drawing start ends PTa of the patterns PT1 to PT5. The drawing end positions EC1 to EC5 of the drawing lines LL1 to LL5 become the drawing end PTb of the patterns PT1 to PT5.

  Of the drawing start end PTa and the drawing end PTb of the pattern PT1, the drawing end PTb is joined to the drawing end PTb of the pattern PT2. Similarly, the drawing start end PTa of the pattern PT2 is joined to the drawing start end PTa of the pattern PT3, the drawing end PTb of the pattern PT3 is joined to the drawing end PTb of the pattern PT4, and the drawing start end PTa of the pattern PT4 is joined to the drawing start end PTa of the pattern PT5. Join together. Thus, the patterns PT1 to PT5 drawn on the substrate P are joined together in the width direction of the substrate P as the substrate P moves in the longitudinal direction, and the device pattern is drawn on the entire large exposure area A7. The

  FIG. 12 is an explanatory diagram showing the relationship between the spot light of the drawing beam and the drawing line. Of the drawing units UW1 to UW5, the drawing lines LL1 and LL2 of the drawing units UW1 and UW2 will be described as a representative. The same applies to the drawing lines LL3 to LL5 of the drawing units UW3 to UW5, and the description thereof will be omitted. Due to the constant rotation of the rotating polygon mirror 97, the beam spot light SP of the drawing beam LB moves along the drawing lines LL1 and LL2 on the substrate P along the drawing lines LL1 and LL2 from the drawing start positions OC1 and OC2 to the drawing end positions EC1 and EC2. Scanned by length LBL.

  In general, in the direct drawing exposure method, even when a pattern having a minimum size that can be exposed as an apparatus is drawn, highly accurate and stable pattern drawing is realized by multiple exposure (multiple writing) using a plurality of spot lights SP. As shown in FIG. 12, on the drawing lines LL1 and LL2, if the effective diameter of the spot light SP is Xs, the drawing beam LB is pulsed light, and therefore one pulsed light (emission time in picosecond order). ) And the spot light SP generated by the next one pulse light are scanned so as to overlap in the Y direction (main scanning direction) at a distance CXs of about ½ of the diameter Xs. Has been.

  Since the substrate P is transported in the + X direction at a constant speed simultaneously with the main scanning of the spot light SP along the drawing lines LL1 and LL2, the drawing lines LL1 and LL2 are constant in the X direction on the substrate P. Move (sub-scan) at a pitch. Here, the pitch is set to a distance CXs that is approximately ½ of the diameter Xs of the spot light SP, but is not limited thereto. Thereby, also in the sub-scanning direction (X direction), the spot lights SP adjacent in the X direction are overlapped and exposed at a distance CXs that is ½ of the diameter Xs (or other overlapping distance may be used). . Further, the beam spot light SP shot at the drawing end position EC1 of the drawing line LL1 and the beam spot light SP shot at the drawing end position EC2 of the drawing line LL2 move in the longitudinal direction of the substrate P (ie, sub-scanning). ), The drawing start position OC1 and the drawing end position EC1 of the drawing line LL1, and the drawing start position OC2 of the drawing line LL2 and the drawing so as to be spliced in the width direction (Y direction) of the substrate P with the overlapping distance CXs. An end position EC2 is set.

  As an example, when the effective diameter Xs of the beam spot light SP is 4 μm, the spot light SP is occupied by 2 rows × 2 columns (a total of four spot lights aligned in both main scanning and sub scanning directions). A pattern whose minimum dimension is the area occupied by the area or 3 rows × 3 columns (a total of nine spot lights aligned in both main scanning and sub-scanning directions), that is, the minimum dimension is about 6 μm to 8 μm. The line width pattern can be exposed satisfactorily. Further, assuming that the reflecting surface 97b of the rotating polygon mirror 97 is 10 surfaces and the rotating speed of the rotating polygon mirror 97 around the rotating shaft 97a is 10,000 rpm or more, the drawing lines (LL1 to LL5) by the rotating polygon mirror 97 are drawn. The number of scanning of the spot light SP (drawing beam LB) (scanning frequency Fms) can be set to 1666.66. This means that patterns of 1666 or more drawing lines can be drawn on the substrate P in the transport direction (X direction) per second. Therefore, when the transport distance (transport speed) per second of the substrate P is slowed, the overlapping distance CXs of the spot lights in the sub-scanning direction (X direction) is less than or equal to ½ of the spot light diameter Xs. Can be set to a value such as 1/3, 1/4, 1/5,..., In which case the same drawing pattern is exposed over multiple scans along the spotlight drawing line Thus, the amount of exposure given to the photosensitive layer of the substrate P can be increased.

  Further, when the conveyance speed of the substrate P by the rotational drive of the rotary drum DR is about 5 mm / s, the drawing line LL1 (same for LL2 to LL5) shown in FIG. 12 in the X direction (the conveyance direction of the substrate P). The pitch (distance CXs) can be about 3 μm.

  In the case of the present embodiment, the pattern drawing resolution R in the main scanning direction (Y direction), together with the effective diameter Xs of the spot light SP and the scanning frequency Fms, is that of the acousto-optic element (AOM) constituting the optical deflector 81. This is determined by the minimum ON / OFF switching time. When an acoustooptic device (AOM) having a maximum response frequency Fss = 50 MHz is used, each time in the ON state and the OFF state can be set to about 20 nS. Further, the effective scanning period of the drawing beam LB by the one reflecting surface 97b of the rotating polygon mirror 97 (scanning of spot light corresponding to the length LBL of the drawing line) is about 1/3 of the rotation angle of one reflecting surface 97b. Therefore, when the drawing line length LBL is set to 30 mm, the resolution R determined depending on the switching time of the optical deflector 81 is R = LBL / (1/3) / (1 / Fms) × ( 1 / Fss) ≈3 μm.

  From this relational expression, in order to improve the resolution R of pattern drawing, for example, an acoustooptic element (AOM) of the optical deflector 81 having a maximum response frequency Fss of 100 MHz is used, and the ON / OFF switching time is set to 10 nsec. . As a result, the resolution R is halved to 1.5 μm. In this case, the conveyance speed of the substrate P by the rotation of the rotary drum DR is halved. As another method for improving the resolution R, for example, the rotational speed of the rotating polygon mirror 97 may be increased.

Generally, a resist having a resist sensitivity Sr of about 30 mj / cm ² is used for a resist used in photolithography. The transmittance ΔTs of the optical system is 0.5 (50%), the effective scanning period in one reflecting surface 97b of the rotating polygon mirror 97 is about 1/3, the drawing line length LBL is 30 mm, and the drawing units UW1 to UW1. Assuming that the number Nuw of UW5 is 5 and the transport speed Vp of the substrate P by the rotating drum DR is 5 mm / s (300 mm / min), the necessary laser power Pw of the light source device CNT can be estimated as the following equation.

  Pw = 30/60 × 3 × 30 × 5 / 0.5 / (1/3) = 1350 mW

  If the number of drawing units is seven, the necessary laser power Pw of the light source device CNT can be estimated by the following equation.

  Pw = 30/60 × 3 × 30 × 7 / 0.5 / (1/3) = 1890 mW

For example, if the resist sensitivity is about 80 mj / cm ² , a light source device CNT having a beam output of about 3 to 5 W is required to perform exposure at the same speed. Instead of preparing such a high power light source, if the transport speed Vp of the substrate P due to the rotation of the rotating drum DR is reduced to 30/80 from the initial value of 5 mm / s, the beam output becomes 1.4. It is also possible to perform exposure with a light source device of about ˜1.9 W.

  Further, the length LBL of the drawing line is set to 30 mm, and the resolution determined by the light switching by the spot diameter Xs of the beam spot light SP and the acoustooptic element (AOM) of the optical deflector 81 (in the minimum grid for specifying the beam position, (Corresponding to one pixel) If Xg is equal to 3 μm, the rotation time of the rotating polygon mirror 97 when the rotation speed of the 10-side rotating polygon mirror 97 is 10,000 rpm is 3/500 seconds. When the effective scanning period by one reflecting surface 97b of the mirror 97 is 1/3 of the rotation angle of one reflecting surface 97b, the effective scanning time Ts (second) by one reflecting surface 97b is (3/500 ) × (1/10) × (1/3), and Ts = 1/5000 (seconds). Accordingly, the pulse emission frequency Fz when the light source device CNT is a pulse laser is obtained by Fz = LBL / (Ts · Xs), and Fz = 50 MHz is the lowest frequency. Therefore, in the embodiment, the light source device CNT that outputs a pulse laser having a frequency of 50 MHz or more is required. From this, the pulse emission frequency Fz of the light source device CNT is preferably at least twice (for example, 100 MHz) the maximum response frequency Fss (for example, 50 MHz) of the acousto-optic element (AOM) of the optical deflector 81.

  Further, the drive signal for switching the acousto-optic element (AOM) of the optical deflector 81 to the ON state / OFF state transitions while the acousto-optic element (AOM) transits from the ON state to the OFF state or from the OFF state to the ON state. It is preferable to control the light source device CNT so as to synchronize with a clock signal that oscillates at the pulse emission frequency Fz so that no pulse emission occurs during this time.

  Next, the relationship between the spot diameter Xs of the beam spot light SP and the pulse emission frequency Fz of the light source device CNT will be described using the graph of FIG. 13 from the viewpoint of the beam shape (intensity distribution of the two overlapping spot lights SP). To do. The horizontal axis in FIG. 13 represents the drawing position of the spot light SP in the Y direction along the drawing line or the X direction along the transport direction of the substrate P, or the size of the spot light SP, and the vertical axis represents a single spot. This represents a relative intensity value obtained by standardizing the peak intensity of the light SP to 1.0. Here, the intensity distribution of the single spot light SP is assumed to be J1, and the description will be made assuming a Gaussian distribution.

In FIG. 13, the intensity distribution J1 of the single spot light SP has a diameter of 3 μm with an intensity of 1 / e ² with respect to the peak intensity. The intensity distributions J2 to J6 are simulations of integrated intensity distributions (profiles) obtained on the substrate P when the two pulses of such spot light SP are irradiated with the positions shifted in the main scanning direction or the sub-scanning direction. The results are shown, and the positional shift amounts (interval distances) are varied.

  In the graph of FIG. 13, the intensity distribution J5 indicates a case where two pulses of the spot light SP are shifted by the same distance as the diameter of 3 μm, and the intensity distribution J4 indicates that the distance between the two pulses of the spot light SP is 2. In the case of .25 μm, the intensity distribution J3 indicates a case where the distance between the two pulses of the spot light SP is 1.5 μm. As is apparent from the changes in the intensity distributions J3 to J5, in the intensity distribution J5, in the condition that the spot light SP having a diameter of 3 μm is irradiated at intervals of 3 μm, the integrated profile is obtained for each of the two spot lights. At the center position, the highest hump shape is obtained, and at the position of the midpoint between the two spot lights, a normalized intensity of only about 0.3 is obtained. On the other hand, when the spot light SP having a diameter of 3 μm is irradiated at intervals of 1.5 μm, the integrated profile does not have a conspicuous distribution in the profile, and is the midpoint between the two spot lights. It is almost flat across the position.

  In FIG. 13, the intensity distribution J2 indicates an integrated profile when the interval distance of the spot light SP for two pulses is 0.75 μm, and the intensity distribution J6 indicates the intensity of the single spot light SP. An integration profile when the full width at half maximum (FWHM) of the distribution J1 is set to 1.78 μm is shown.

  Thus, in the case of a pulse oscillation condition in which two spot lights are irradiated at an interval distance CXs shorter than the same interval as the diameter Xs of the spot light SP, two bump-like distributions tend to appear remarkably. It is desirable to set the optimal distance so that intensity unevenness (deterioration of drawing accuracy) does not occur during exposure. Like the intensity distribution J3 or J6 in FIG. 13, it is preferable to superimpose them at an interval distance CXs that is about half (for example, 40 to 60%) of the diameter Xs of the single spot light SP. Such an optimal distance CXs is the pulse emission frequency Fz of the light source device CNT and the scanning speed or scanning time Ts of the spot light SP along the drawing line (the rotational speed of the rotating polygon mirror 97) in the main scanning direction. The sub-scanning direction can be set by adjusting at least one of the drawing line scanning frequency Fms (the rotational speed of the rotating polygon mirror 97) and the moving speed of the substrate P in the X direction. Can be set.

  For example, when the absolute value of the rotational speed of the rotating polygon mirror 97 (spot light scanning time Ts) cannot be adjusted with high accuracy, the spot light in the main scanning direction is finely adjusted by finely adjusting the pulse emission frequency Fz of the light source device CNT. The ratio between the SP distance CXs and the spot light diameter Xs (dimension) can be adjusted to an optimum range.

As described above, when the two spot lights SP are superimposed in the scanning direction, that is, when Xs> CXs, the light source device CNT has a pulse emission frequency Fz with a relationship of Fz> LBL / (Ts · Xs). Thus, the relationship of Fz = LBL / (Ts · CXs) is set. For example, when the pulse emission frequency Fz of the light source device CNT is 100 MHz, if the rotating polygon mirror 97 is rotated at 10,000 rpm with 10 surfaces, the effective spot light defined by 1 / e ² or full width at half maximum (FWHM) With a typical diameter Xs of 3 μm, a pulse laser beam (spot light) from each drawing unit UW1 to UW5 is irradiated on each drawing line LL1 to LL5 at an interval (CXs) of about half the diameter Xs (CXs). be able to. Thereby, the uniformity of the exposure amount at the time of pattern drawing is improved, a faithful exposure image (resist image) according to the drawing data can be obtained even with a fine pattern, and high-precision drawing can be achieved.

  Furthermore, the resolution (response frequency Fss) determined by the optical switching speed of the acousto-optic element (AOM) and the pulse oscillation frequency Fz of the light source device CNT of the pulse laser light source are converted into position or time, where h is an arbitrary integer. Therefore, it is necessary to have an integer multiple relationship, that is, a relationship of Fz = h · Fss. This is to prevent ON / OFF while the pulse beam is emitted from the pulse light source device CNT, depending on the optical switching timing of the acousto-optic element (AOM).

  In the exposure apparatus EX of the first embodiment, since the pulse light source device CNT in which the fiber amplifiers FB1 and FB2 and the wavelength conversion element of the wavelength conversion unit CU2 are combined is used, in the ultraviolet wavelength region (400 to 300 nm), this is the case. Pulse light having a high oscillation frequency can be easily obtained.

  In the optical switching by the acousto-optic device (AOM), the pattern to be drawn is divided into pixel units of 3 μm × 3 μm, for example, and “0” is set as to whether or not the spot light of the pulse beam is irradiated for each pixel unit. , Based on the bit string (drawing data) represented by “1”. When the length LBL of the drawing line is 30 mm, the number of pixels during one scanning of the spot light is 10,000 pixels, and the acousto-optic device (AOM) switches a bit string for 10,000 pixels during the scanning time Ts. Responsiveness (response frequency Fss) is provided. On the other hand, the pulse oscillation frequency Fz is set so that adjacent spot lights in the main scanning direction are overlapped by about ½ of the diameter Xs, for example. Therefore, in the above relational expression, Fz = h · Fss, the pulse oscillation frequency Fz and the optical switching response frequency Fss of the acoustooptic device (AOM) are set so that the integer h is 2 or more, that is, Fz> Fss. It is better to set the relationship.

  Next, a method for adjusting the drawing device 11 of the exposure apparatus EX will be described. FIG. 14 is a flowchart relating to the adjustment method of the exposure apparatus of the first embodiment. FIG. 15 is an explanatory diagram schematically showing the relationship between the reference pattern of the rotating drum and the drawing line. FIG. 16 is an explanatory diagram schematically illustrating a signal output from a photoelectric sensor that receives reflected light from the reference pattern of the rotating drum in a bright field. The controller 16 rotates the rotary drum DR as shown in FIG. 15 for calibration to grasp the positional relationship among the drawing units UW1 to UW5. The rotating drum DR may transport the substrate P that is light-transmitting to the extent that the drawing beam LB can be transmitted.

  As described above, the reference pattern RMP is integral with the outer peripheral surface of the rotary drum DR. As shown in FIG. 15, among the reference patterns RMP, an arbitrary reference pattern RMP1 moves with the movement of the outer peripheral surface of the rotary drum DR. For this reason, the reference pattern RMP1 passes through the drawing lines LL1, LL3, LL5 and then passes through the drawing lines LL2, LL4. For example, when the same reference pattern RMP1 passes through the drawing lines LL1, LL3, and LL5, the control unit 16 scans the drawing beams LB of the drawing units UW1, UW3, and UW5. When the same reference pattern RMP1 passes through the drawing lines LL2 and LL4, the control unit 16 scans the drawing beam LB of the drawing units UW2 and UW4 (step S1). For this reason, the reference pattern RMP1 is a reference for grasping the positional relationship between the drawing units UW1 to UW5.

  The photoelectric sensor 31Cs (FIG. 4) of the calibration detection system 31 described above detects reflected light from the reference pattern RMP1 via the f-θ lens system 85 and the scanning optical system including the scanner 83. The photoelectric sensor 31Cs is connected to the control unit 16, and the control unit 16 detects a detection signal of the photoelectric sensor 31Cs (step S2). For example, the drawing units UW1 to UW5 scan a plurality of rows of the plurality of drawing beams LB in a predetermined scanning direction for each of the drawing lines LL1 to LL5.

  For example, as illustrated in FIG. 16, the drawing units UW1 to UW5 are configured to draw the drawing beam LB from the drawing start position OC1 in the direction (Y direction) along the rotation center line AX2 of the rotary drum DR described above. The first column scan SC1 is performed for LBL (see FIG. 12). Next, the drawing units UW1 to UW5 draw the drawing beam LB from the drawing start position OC1 in the direction (Y direction) along the rotation center line AX2 of the rotary drum DR described above (see FIG. 12). Only the second column scan SC2 is performed. Next, the drawing units UW1 to UW5 draw the drawing beam LB from the drawing start position OC1 in the direction (Y direction) along the rotation center line AX2 of the rotary drum DR described above (see FIG. 12). Only the third column scan SC3 is performed.

  Since the rotary drum DR rotates around the rotation center line AX2, the positions in the X direction on the reference pattern RMP1 of the first column scan SC1, the second column scan SC2, and the third column scan SC3 are only ΔP1 and ΔP2. Different. The control unit 16 scans the drawing beam LB along the first row scan SC1 while the rotary drum DR is stationary, and then rotates the rotary drum DR by ΔP1 so as to be stationary. Even if the drawing beam LB is scanned along the scanning SC2, and the rotating drum DR is rotated again by ΔP2 to be stationary and the drawing beam LB is scanned along the third row scanning SC3, the respective parts are operated in this order. Good.

  As described above, in the reference pattern RMP, the intersection portions Cr1 and Cr2 of the two line patterns RL1 and RL2 that are formed on the outer peripheral surface of the rotary drum DR are smaller than the length LBL of the drawing line described above. Is set. For this reason, when the drawing beam LB of the first column scan SC1, the second column scan SC2, and the third column scan SC3 is projected, at least the intersection portions Cr1 and Cr2 are irradiated with the drawing beam LB. The line patterns RL1 and RL2 are formed as irregularities on the surface of the rotary drum DR. When the amount of unevenness on the surface of the rotating drum DR is set to a specific condition, the reflected light generated by the projection beam LB being projected onto the line patterns RL1 and RL2 partially causes a difference in reflection intensity. For example, as shown in FIG. 16, when the line patterns RL1 and RL2 are concave portions on the surface of the rotary drum DR, when the drawing beam LB is projected onto the line patterns RL1 and RL2, the reflection is reflected by the line patterns RL1 and RL2. Light is received by the photoelectric sensor 31Cs in a bright field.

  The control unit 16 detects the edge position pscl of the reference pattern RMP based on the output signal from the photoelectric sensor 31Cs. For example, the control unit 16 obtains the first column scanning position data Dsc1 and the center value mpscl of the edge position pscl of the reference pattern RMP based on the output signal obtained from the photoelectric sensor 31Cs during the first column scanning SC1. Remember.

  Next, the control unit 16 determines the second column scanning position data Dsc2 and the center value mpscl of the edge position pscl of the reference pattern RMP based on the output signal obtained from the photoelectric sensor 31Cs during the second column scanning SC2. Remember. Then, the control unit 16 stores the third column scanning position data Dsc3 and the center value mpscl of the edge position pscl of the reference pattern RMP based on the output signal obtained from the photoelectric sensor 31Cs during the third column scanning SC3. To do.

  The control unit 16 intersects each other from the first column scanning position data Dsc1, the second column scanning position data Dsc2, the third column scanning position data Dsc3, and the center value mpscl of the edge positions pscl of the plurality of reference patterns RMP. The coordinate positions of the intersections Cr1 and Cr2 of the line patterns RL1 and RL2 are obtained by calculation. As a result, the control unit 16 can also calculate the relationship between the intersection points Cr1 and Cr2 of the two line patterns RL1 and RL2 that intersect each other and the drawing start position OC1. Similarly, for the other drawing units UW2 to UW5, the control unit 16 also has a relationship between the intersection portions Cr1 and Cr2 of the two line patterns RL1 and RL2 that intersect each other and the drawing start positions OC2 to OC5 (see FIG. 11). It can be calculated. The above-described center value mpscl may be obtained from the peak value of the signal output from the photoelectric sensor 31Cs.

  As described above, the case where the photoelectric sensor 31Cs receives the reflected light reflected by the line patterns RL1 and RL2 in the bright field has been described. However, the photoelectric sensor 31Cs receives the reflected light reflected by the line patterns RL1 and RL2 in the dark field. May be. FIG. 17 is an explanatory diagram schematically showing a photoelectric sensor that receives reflected light from the reference pattern of the rotating drum in a dark field. FIG. 18 is an explanatory diagram schematically showing a signal output from a photoelectric sensor that receives reflected light from the reference pattern of the rotating drum in a dark field. As shown in FIG. 17, in the calibration detection system 31, a light shielding member 31f having a ring-shaped light transmission portion is disposed between the relay lens 94 and the photoelectric sensor 31Cs. For this reason, the photoelectric sensor 31Cs receives edge scattered light or diffracted light among the reflected light reflected by the line patterns RL1 and RL2. For example, as shown in FIG. 18, when the line patterns RL1 and RL2 are concave portions on the surface of the rotary drum DR, when the drawing beam LB is projected onto the line patterns RL1 and RL2, the photoelectric sensor 31Cs is connected to the line patterns RL1 and RL2. The reflected light reflected at is received in the dark field.

  The control unit 16 detects the edge position pscdl of the reference pattern RMP based on the signal output from the photoelectric sensor 31Cs. For example, the control unit 16 obtains the first column scanning position data Dsc1 and the center value mpscdl of the edge position pscdl of the reference pattern RMP based on the output signal obtained from the photoelectric sensor 31Cs during the first column scanning SC1. Remember. Next, the control unit 16 determines the second column scanning position data Dsc2 and the center value mpscdl of the edge position pscdl of the reference pattern RMP based on the output signal obtained from the photoelectric sensor 31Cs during the second column scanning SC2. Remember. The control unit 16 stores the third column scanning position data Dsc3 and the center value mpscdl of the edge position pscdl of the reference pattern RMP based on the output signal obtained from the photoelectric sensor 31Cs during the third column scanning SC3. .

  The control unit 16 intersects each other from the first column scanning position data Dsc1, the second column scanning position data Dsc2, the third column scanning position data Dsc3, and the center value mpscdl of the edge positions pscdl of the plurality of reference patterns RMP. Intersections Cr1 and Cr2 of the line patterns RL1 and RL2 are obtained by calculation. As a result, the control unit 16 obtains the relationship between the coordinate position of the intersections Cr1 and Cr2 of the two line patterns RL1 and RL2 intersecting each other and the drawing start position OC1 by calculation.

  Similarly, for the other drawing units UW2 to UW-5, the control unit 16 can also calculate the relationship between the intersection points Cr1 and Cr2 of the two line patterns RL1 and RL2 that intersect each other and the drawing start positions OC2 to OC5. . Thus, when the photoelectric sensor 31Cs receives the reflected light reflected by the line patterns RL1 and RL2 in the dark field, the accuracy of the edge positions pscdl of the plurality of reference patterns RMP can be improved.

  As shown in FIG. 14, the control unit 16 obtains adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error from the detection signal detected in step S2 (step). S3). FIG. 19 is an explanatory diagram schematically showing the positional relationship between the reference patterns of the rotating drum. FIG. 20 is an explanatory diagram schematically showing the relative positional relationship between a plurality of drawing lines. As described above, the odd-numbered first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 are arranged. As shown in FIG. 19, the first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 are arranged. For each drawing line LL5, the control unit 16 stores in advance the reference distance PL between the detected intersections Cr1. Similarly, the control unit 16 stores in advance the reference distance PL between the intersection points Cr1 detected for each of the second drawing line LL2 and the fourth drawing line LL4. The control unit 16 also stores in advance the reference distance ΔPL between the intersection points Cr1 detected for each of the second drawing line LL2 and the third drawing line LL3. Furthermore, the control unit 16 also stores in advance the reference distance ΔPL between the intersection points Cr1 detected for each of the fourth drawing line LL4 and the fifth drawing line LL5.

  For example, as shown in FIG. 20, the control unit 16 can grasp the positional relationship between the drawing start position OC1 of the first drawing line LL1 based on a signal from the origin detector 98 (see FIG. 7). The distance BL1 between the intersection point Cr1 and the drawing start position OC1 can be obtained. Further, since the drawing start position OC3 of the third drawing line LL3 can be detected by the origin detector 98, the control unit 16 can obtain the distance BL3 between the intersection part Cr1 and the drawing start position OC3. Therefore, the control unit 16 obtains the positional relationship between the drawing start position OC1 and the drawing start position OC3 based on the distance BL1, the distance BL3, and the reference distance PL, and performs a drawing beam that scans along the drawing lines LL1 and LL3. An inter-origin distance ΔOC13 between the LB origins can be stored. Similarly, since the drawing start position OC5 of the fifth drawing line LL5 can be detected by the origin detector 98, the control unit 16 can obtain the distance BL5 between the intersection part Cr1 and the drawing start position OC5. For this reason, the control unit 16 obtains a positional relationship between the drawing start position OC3 and the drawing start position OC5 based on the distance BL3, the distance BL5, and the reference distance PL, and performs a drawing beam that scans along the drawing lines LL3 and LL5. An inter-origin distance ΔOC35 between the LB origins can be stored.

  Since the drawing start position OC2 of the second drawing line LL2 can be detected by the origin detector 98, the control unit 16 can obtain the distance BL2 between the intersection part Cr1 and the drawing start position OC2. Further, since the drawing start position OC4 of the fourth drawing line LL4 can be detected by the origin detector 98, the control unit 16 can obtain the distance BL4 between the intersection part Cr1 and the drawing start position OC4. Therefore, the control unit 16 obtains the positional relationship between the drawing start position OC2 and the drawing start position OC4 based on the distance BL2, the distance BL4, and the reference distance PL, and draws the drawing beam that scans along the drawing lines LL2 and LL4. The inter-origin distance ΔOC24 between the LB origins can be stored.

  Further, since the drawing start position OC1 and the drawing start position OC2 are positions obtained through the same reference pattern RMP1, the control unit 16 can easily draw the drawing beam along the drawing lines LL1 and LL2. The inter-origin distance ΔOC12 between the LB origins can be stored. As described above, the exposure apparatus EX can determine the mutual positional relationship between the individual origins (drawing start points) of the plurality of drawing units UW1 to UW5.

  Further, the control unit 16 detects an error in which the drawing start position OC2 and the drawing start position OC3 are joined from the reference distance ΔPL between the intersection points Cr1 detected in the second drawing line LL2 and the third drawing line LL3. be able to. Furthermore, an error in which the drawing start position OC4 and the drawing start position OC5 are joined can be detected from the reference distance ΔPL between the intersection points Cr1 detected in the fourth drawing line LL4 and the fifth drawing line LL5. .

  Two intersection points Cr1 and Cr2 are detected between the drawing start positions OC1 to OC5 of the drawing lines LL1 to LL5 and the drawing end positions EC1 to EC5. Thereby, the scanning direction from the drawing start positions OC1 to OC5 to the drawing end positions EC1 to EC5 can be detected. As a result, the control unit 16 can detect an angular error with respect to the direction (Y direction) along which the drawing lines LL1 to LL5 are along the center line AX2.

  The control unit 16 obtains adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error with respect to the reference pattern RMP1 described above. The reference pattern RMP including the reference pattern RMP1 is a mesh-like reference pattern that is repeatedly engraved with a constant pitch (period) Pf1, Pf2. For this reason, the control unit 16 obtains adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors with respect to the reference pattern RMP repeated at each pitch Pf1, Pf2. Information related to the relative positional deviation of the drawing lines LL1 to LL5 is calculated. As a result, the control unit 16 can further improve the accuracy of the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error.

  Next, as shown in FIG. 14, the control unit 16 performs a process of adjusting the drawing state (step S4). The control unit 16 includes adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors, and scale units (rotary drum DR) GPa and GPb detected by the encoder heads EN1 and EN2. The drawing positions by the odd-numbered and even-numbered drawing units UW1 to UW5 are adjusted on the basis of the rotation angle position. The encoder heads EN1 and EN2 can detect the feed amount of the substrate P based on the scale units (rotating drums DR) GPa and GPb described above.

  FIG. 21 is an explanatory diagram schematically showing the relationship between the movement distance per unit time of the substrate and the number of drawing lines included in the movement distance, as in FIG. As shown in FIG. 21, the encoder heads EN1 and EN2 can detect and store the movement distance ΔX of the substrate P per unit time. Note that the alignment microscopes AM1 and AM2 may sequentially detect the plurality of alignment marks Ks1 to Ks3 and obtain and store the movement distance ΔX.

  At a moving distance ΔX per unit time of the substrate P, a plurality of drawing lines LL1 by the drawing unit UW1 are drawn by the beam lines SPL1, SPL2, and SPL3 of the beam spot light SP, and the spot diameter Xs of each beam spot light SP is Scanning is performed so as to overlap in the X direction (and Y direction) at about 1/2. Similarly, the beam spot light SP on the drawing end PTb side of the drawing line LL1 and the beam spot light SP on the drawing end PTb side of the drawing line LL2 are the width of the substrate P as the substrate P moves in the longitudinal direction. It will be spliced in the direction with the overlap distance CXs.

  For example, when the rotary drum DR is moved up and down, the drawing positions in the X direction by the odd-numbered and even-numbered drawing units UW1 to UW5 are displaced, and there is a possibility that the magnification is shifted in the X direction, for example. When the transport speed (movement speed) of the substrate P transported by the rotary drum DR is slowed, the control unit 16 decreases the X-direction distance CXs between the beam lines SPL1, SPL2, and SPL3, and decreases the X-direction drawing magnification. Can be adjusted as follows. Conversely, when the transport speed (movement speed) of the substrate P transported by the rotary drum DR is increased, the distance CXs in the X direction between the beam lines SPL1, SPL2, and SPL3 is increased, and the drawing magnification in the X direction is increased. Can be adjusted. The drawing line LL1 has been described above with reference to FIG. 21, but the same applies to the other drawing lines LL2 to LL5. The control unit 16 detects the scale units (rotating drums DR) GPa and GPb using the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error and the encoder heads EN1 and EN2. Based on the rotation angle position, the relationship between the movement distance ΔX per unit time of the substrate P in the long direction of the substrate P and the number of beam lines SPL1, SPL2, and SPL3 included in the movement distance is changed. be able to. For this reason, the control part 16 can adjust the drawing position of the X direction by the drawing units UW1-UW5 of the odd number and the even number.

  FIG. 22 is an explanatory diagram schematically illustrating pulsed light that is emitted in synchronization with the system clock of the pulsed light source. Hereinafter, the drawing line LL2 will be described with reference to FIG. 21, but the same applies to the drawing lines LL1, LL3 to LL5. The light source device CNT can shoot the beam spot light SP in synchronization with the pulse signal wp as the system clock SQ. By changing the frequency Fz of the system clock SQ, the pulse interval Δwp (= 1 / Fz) of the pulse signal wp is changed. The temporal pulse interval Δwp corresponds to the interval distance CXs in the main scanning direction of the spot light SP for each pulse on the drawing line LL2. The control unit 16 scans the beam spot light SP of the drawing beam LB by the length LBL of the drawing line along the drawing line LL2 on the substrate P.

  While the drawing beam LB scans along the drawing line LL2, the control unit 16 partially changes the cycle of the system clock SQ to increase or decrease the pulse interval Δwp at an arbitrary position in the drawing line LL2. It has a function to let you. For example, when the original system clock SQ is 100 MHz, the control unit 16 partially outputs the system clock SQ at a certain time interval (cycle), for example, 101 MHz (or 99 MHz) while scanning the drawing line length LBL. ). As a result, the number of beam spot lights SP in the drawing line length LBL increases or decreases. In other words, the control unit 16 partially increases / decreases the duty of the system clock SQ at a predetermined time interval (one or more) while scanning for the length LBL of the drawing line. Thereby, the interval of the beam spot light SP generated by the light source CNT changes by the change of the pulse interval Δwp, and the overlapping distance CXs between the beam spot lights SP changes. The distance between the drawing start end PTa and the drawing end PTb in the Y direction apparently expands and contracts.

  For example, when the length LBL of the drawing line is 30 mm, it is divided into 11 equal parts, and the pulse interval Δwp of the system clock SQ is increased or decreased by one for every drawing length (periodic interval) of about 3 mm. As described with reference to FIG. 13, the increase / decrease amount of the pulse interval Δwp is a range in which the integrated profile (intensity distribution) is not greatly deteriorated due to a change in the interval distance CXs between two adjacent spot lights SP, for example, a reference interval distance If CSx is 50% of the diameter Xs (3 μm) of the spot light, it is set to about ± 15%. If the increase / decrease in the pulse interval Δwp is + 10% (the interval distance CSx is 60% of the diameter Xs of the spot light), the spot light for one pulse has a diameter at each of the 10 discrete points in the drawing line of length LBL. The position is shifted so as to extend in the main scanning direction by 10% of Xs. As a result, the length LBL of the drawing line after drawing extends by 3 μm with respect to 30 mm. This means that the pattern drawn on the substrate P is enlarged by 0.01% (100 ppm) in the Y direction. As a result, even when the substrate P is expanded and contracted in the Y direction, the drawing pattern can be expanded and contracted in the Y direction and exposed.

  A configuration in which the position at which the pulse interval Δwp is increased or decreased can be preset to an arbitrary value, for example, every scan of the drawing lines LL1 to LL5, for example, every 100 pulses of the system clock SQ, every 200 pulses, etc. And In this way, the expansion / contraction amount of the drawing pattern in the main scanning direction (Y direction) can be changed within a relatively large range, and the magnification correction can be dynamically applied according to the expansion / contraction and deformation of the substrate P. Therefore, the control unit 16 of the exposure apparatus EX of the present embodiment includes a system clock SQ generation circuit, which generates a source clock signal with a constant pulse interval Δwp as the system clock SQ. And a time shift unit for increasing / decreasing the time until the next one clock pulse of the system clock SQ is generated when the number of clock pulses of the system clock SQ is counted by a preset value. Have. In the drawing line (length LBL), the number of portions where the pulse interval Δwp of the system clock SQ is increased or decreased is roughly determined by the magnification correction ratio (ppm) in the Y direction of the pattern to be drawn. There may be at least one spot in the scanning time Ts of the spot light SP corresponding to the length LBL.

  FIG. 23 shows an example of a clock generation circuit that makes the pulse interval Δwp of the system clock SQ partially variable. In FIG. 23, the clock oscillator 200 outputs a basic clock signal CKL having the same frequency as the system clock SQ. The basic clock signal CKL includes a delay circuit 202 that generates a system clock SQ by adding a predetermined delay time Td for each pulse of the basic clock signal CKL, and a multiplied clock signal obtained by multiplying the frequency of the basic clock signal CKL by, for example, 20 times. This is applied to a multiplier circuit 204 that outputs CKs.

The delay circuit 202 includes a counter that counts the number of pulses of the multiplied clock signal CKs to a predetermined value ΔNs. The time during which the counter counts the predetermined value ΔNs corresponds to the delay time Td. The predetermined value ΔNs is set by the preset circuit 206. The preset circuit 206 has a standard value Ns ₀ as an initial value of the predetermined value ΔNs inside, and a preset value Dsb (a value corresponding to the change ΔTd of the delay time Td) is sent from the outside (main CPU or the like). Then, the new predetermined value ΔNs is rewritten to the previous predetermined value ΔNs + Dsb.

  The rewriting is performed in response to the completion pulse signal b from the counter circuit 208 that counts the pulses of the system clock SQ output from the delay circuit 202. When the counter circuit 208 counts the number of pulses of the system clock SQ up to the preset value Dsa and outputs the completion pulse signal b, the counter circuit 208 repeats counting the number of pulses of the system clock SQ again by resetting the count value to zero. . The preset value Dsa is the pulse number Nck of the spot light corresponding to one length LBL / N when the drawing line length LBL is equally divided into N, but it is not necessarily required to correspond to the length LBL / N. It can be any value. The delay circuit 202, the preset circuit 206, and the counter circuit 208 described above constitute a time shift unit.

FIG. 24 is a timing chart showing time transitions of signals at various parts in the circuit configuration of FIG. It is assumed that a standard value Ns _{0 as} an initial value is set in the preset circuit 206, and the predetermined value ΔNs applied to the delay circuit 202 is the standard value Ns ₀ . Before the counter circuit 208 counts to the set number of pulses Nck, that is, before the completion pulse signal b is generated, the predetermined value ΔNs from the preset circuit 206 is Ns0, and the delay circuit 202 is as shown in FIG. In addition, the number of pulses of the multiplied clock signal CKs is counted from the rising edge of each pulse of the basic clock signal CKL to a predetermined value ΔNs, and one pulse wp is output as the system clock SQ simultaneously with the completion of the counting. Therefore, the delay time Td ₁ from the rising edge of the pulse of the basic clock signal CKL to the rising edge of the corresponding pulse wp of the system clock SQ corresponds to a time for counting the pulses of the multiplied clock signal CKs by a predetermined value ΔNs.

In Figure 24, the pulse wp of the basic clock signal CKL pulse CK _n in correspondence to the system clock SQ that occurred after the delay time Td _1, the counter circuit 208 and counted up by a preset value Dsa (pulse number Nck) min The counter circuit 208 outputs a completion pulse signal b, and in response, the preset circuit 206 rewrites the new predetermined value ΔNs to [predetermined predetermined value ΔNs + Dsb]. The preset value Dsb is a numerical value corresponding to the change amount (ΔTd) of the pulse interval Δwp shown in FIG. 22, and is set as a negative value in FIG. 24, but the same is true for a positive value. Therefore, before the next pulse CK _{n + 1} of the pulse CK _n of the basic clock signal CKL is generated, the delay circuit 202 has a delay time Td ₂ shorter than the delay time Td ₁ set by the standard value Ns ₀ by ΔTd. A corresponding predetermined value ΔNs is set.

As a result, the pulse interval Δwp ′ between the pulse wp ′ of the system clock SQ generated in response to the pulse CK _{n + 1} of the basic clock signal CKL and the immediately preceding pulse wp becomes shorter than the previous pulse interval Δwp. After the generation of the pulse wp ′, the completion pulse signal “b” is not generated until the counter circuit 208 counts the system clock SQ for the number of pulses Nck. Therefore, the predetermined value ΔNs set in the delay circuit 202 is equal to the delay time Td ₂ . Until the next completion pulse signal b is generated, the system clock SQ is output in a state of being uniformly delayed by the delay time Td _{2 with} respect to the basic clock signal CKL. Therefore, the ratio β between the pulse interval Δwp determined by the frequency Fz of the basic clock signal CKL and the pulse interval Δwp ′ corrected by the time shift is:
β = Δwp ′ / Δwp = 1 ± (ΔTd / Δwp) [where ΔTd <Δwp]
Thus, the dimension in the width direction of the pattern drawn along the drawing line is larger than the design value defined by the drawing data when β> 1, and is designed when β <1 (in the case of FIG. 24). Reduced from the value.

In the circuit configuration of FIG. 23 described above, changing the pulse interval Δwp of one pulse wp of the system clock SQ generated immediately after the generation of the completion pulse signal b by the time ΔTd is equivalent to the number of pulses Nck of the system clock SQ. Repeated every time. In the case of the circuit configuration of FIG. 23, if the standard value Ns ₀ stored in the preset circuit 206 is set to 20 and the preset value Dsb set from the outside is set to zero, whether or not the completion pulse signal b is generated is determined. Regardless, the predetermined value ΔNs remains at 20 (the state in which the drawing magnification correction in the Y direction is not performed). Since the frequency of the multiplied clock signal CKs is 20 times the frequency of the basic clock signal CKL, when the predetermined value ΔNs is set to 20, when the preset value Dsb is set to +1 (or −1), the predetermined value ΔNs is Each time the completion pulse signal b is generated, it is rewritten so as to increase (or decrease) to 20, 21, 22,... (Or 20, 19, 18,...). Further, since one pulse of the multiplied clock signal CKs corresponds to 1/20 (5%) of the standard pulse interval Δwp (pulse interval distance CXs), if the preset value Dsb is changed by ± 1, two consecutive spots The degree of light superimposition can be changed in units of 5%.

  As described above, the pulse beam output from the light source device CNT of the pulse laser in response to the system clock SQ in which the pulse interval Δwp is partially increased or decreased in this way is commonly supplied to each of the drawing units UW1 to UW5. Therefore, the pattern drawn on each of the drawing lines LL1 to LL5 is expanded and contracted in the Y direction at the same ratio. Accordingly, as described with reference to FIG. 12 (or FIG. 11), in order to maintain the joint accuracy between the drawing lines adjacent in the Y direction, the drawing start positions OC1 to OC5 (or the drawing lines) of the drawing lines LL1 to LL5. The drawing timing is corrected so that the end positions EC1 to EC5) shift in the Y direction.

As an example of a circuit configuration in which the pulse interval Δwp of the system clock SQ is partially variable, the delay times Td ₁ and Td ₂ are digitally variable as shown in FIGS. Such a configuration may be adopted. Also, one pulse interval Δwp ′ corrected each time the counter circuit 208 counts the system clock SQ up to the preset value Dsb (number of pulses Nck) is slightly smaller than the standard pulse interval Δwp, for example, 1%. It may be configured to increase or decrease by an appropriate value. In that case, the number of locations where the standard pulse interval Δwp is corrected to the pulse interval Δwp ′ during one scanning of the spot light along the drawing line length LBL may be changed according to the required magnification correction amount. . For example, if the number of locations to be corrected is 100, the dimension in the Y direction of the pattern drawn by one spot light scan increases or decreases by the pulse interval Δwp.

  Further, ON / OFF switching of the optical deflector (AOM) 81 shown in FIG. 4 is performed in response to a serial bit string (arrangement of bit values “0” or “1”) transmitted as drawing data. However, the transmission of the bit value may be synchronized with the pulse signal wp (FIG. 24) of the system clock SQ in which the pulse interval Δwp is partially increased or decreased. Specifically, one bit value is sent to the drive circuit of the optical deflector (AOM) 81 until one pulse signal wp is generated and the next pulse signal wp is generated. For example, when the bit value is “1” and the previous bit value is “0”, the optical deflector (AOM) 81 may be switched from the OFF state to the ON state.

  By the way, the control unit 16 can detect displacement information YN1, YN2 that can detect adjustment information (calibration information) corresponding to an arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors, and shakes at both ends of the rotating drum DR. Based on the information detected by YN3, YN3, YN4, the drawing position in the Y direction by the odd-numbered and even-numbered drawing units UW1 to UW5 is adjusted so as to cancel the error in the Y direction caused by the swing of the rotary drum DR. can do. Further, the control unit 16 is capable of detecting displacement information YN1 and YN2 that can detect adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors and shakes at both ends of the rotating drum DR. , YN3, YN4, the length in the Y direction (drawing) by the odd-numbered and even-numbered drawing units UW1 to UW5 so as to cancel the error in the Y direction caused by the swing of the rotating drum DR. The line length LBL) can be changed.

  Further, the control unit 16 determines the substrate P based on adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement error and information detected by the alignment microscopes AM1 and AM2. The drawing positions in the X direction or Y direction by the odd-numbered and even-numbered drawing units UW1 to UW5 can be adjusted so as to cancel the error in the X direction or the Y direction.

  The exposure apparatus EX according to the first embodiment includes a plurality of drawing lines LL1 to LL5 formed on the substrate P by the drawing beam LB from each of the plurality of drawing units UW1 to UW5 as described above. A moving mechanism 24 is included as a shift correction mechanism that shifts the second optical surface plate 25 with respect to the first optical surface plate 23 within the drawing surface about the rotation axis I that is a predetermined point. Due to the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error, the whole of the plurality of drawing lines LL1 to LL5 has an error with respect to at least one of the X direction and the Y direction. The control unit 16 performs drive control on the drive unit of the moving mechanism 24 so that the shift amount cancels the error, and moves the second optical surface plate 25 in the X direction and the Y direction. It can be shifted to at least one.

  When the second optical surface plate 25 is shifted in at least one of the X direction and the Y direction, the fourth reflecting mirror 59 shown in FIG. 6 is displaced in the X direction or the Y direction by the shift amount. In particular, the displacement of the fourth reflecting mirror 59 in the Y direction causes a shift in the Z direction when the drawing beam LB coming from the third reflecting mirror 58 is reflected in the + Y direction. Therefore, the shift movement in the Z direction is corrected by the beam shifter mechanism 44 in the first optical system 41. Thus, the beam LB is maintained so as to pass through the correct optical path with respect to the second optical system 42 and the third optical system 43 after the fourth reflecting mirror 59.

  Further, in the exposure apparatus EX of the first embodiment, the plurality of drawing lines LL1 to LL5 are set in the X direction and the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors. When there is an error with respect to at least one of the Y directions, the control unit 16 controls the beam shifter mechanism 44 so as to achieve a shift amount that cancels the error, and forms it on the substrate P. The drawn lines LL1 to LL5 can be slightly shifted in the X direction or the Y direction.

  Further, in the exposure apparatus EX of the first embodiment, an odd number among the plurality of drawing lines LL1 to LL5 according to the arrangement information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error. Alternatively, when the even-numbered drawing line has an error with respect to at least one of the X direction and the Y direction, the control unit 16 instructs the beam shifter mechanism 45 so that the shift amount cancels the error. By performing drive control, the even-numbered drawing lines LL2 and LL4 formed on the substrate P are slightly shifted in the X direction and the Y direction, and the odd-numbered drawing lines LL1, LL3 and LL5 formed on the substrate P The relative positional relationship of can be finely adjusted.

  Further, based on adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors and information detected by the displacement meters YN1, YN2, YN3, YN4 or the alignment microscopes AM1, AM2. The control unit 16 can also adjust the Y magnification of the drawing units UW1 to UW5. For example, the image height of the telecentric f-θ lens included in the f-θ lens system 85 is proportional to the incident angle. Therefore, when adjusting only the Y magnification of the drawing unit UW1, the control unit 16 is based on the adjustment information (calibration information) and information detected by the displacement meters YN1, YN2, YN3, YN4 or the alignment microscopes AM1, AM2. Thus, the Y magnification can be adjusted by individually adjusting the focal length f of the f-θ lens system 85. For example, one or more of a bending plate for magnification correction, a magnification correction mechanism for a telecentric f-θ lens, and a herbing (tiltable parallel flat glass) for shift adjustment are combined with such an adjustment mechanism. Also good. Further, by slightly changing the rotation speed of the rotating polygon mirror 97 rotating at a constant rotation speed, the interval distance CXs of each spot light SP (pulse light) drawn in synchronization with the system clock SQ is slightly changed. It is possible to change (the amount of overlap between adjacent spot lights is slightly shifted), and as a result, the Y magnification can be adjusted.

  The exposure apparatus EX according to the first embodiment includes a plurality of drawing lines LL1 to LL5 formed on the substrate P by the drawing beam LB from each of the plurality of drawing units UW1 to UW5 as described above. A moving mechanism 24 is included as a rotating mechanism that rotates the second optical surface plate 25 relative to the first optical surface plate 23 within the drawing surface around the rotation axis I that is a predetermined point. Control is performed when the plurality of drawing lines LL1 to LL5 have an angle error with respect to the Y direction by adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors. The unit 16 can rotate the second optical surface plate 25 by performing drive control on the drive unit of the moving mechanism 24 so that the rotation amount cancels the angle error.

  If it is necessary to individually correct the rotation of each of the drawing units UW1 to UW5, the f-θ lens system 85 and the second cylindrical lens 86 shown in FIG. 8 are rotated by a small amount around the optical axis AXf. By doing so, the drawing lines LL1 to LL5 can be slightly rotated (tilted) individually on the substrate P. Since the beam LB scanned by the rotating polygon mirror 97 is imaged (condensed) along the generatrix of the cylindrical lens 86 in the non-scanning direction, each drawing line LL1 is rotated by the rotation of the cylindrical lens 86 about the optical axis AXf. This makes it possible to rotate (tilt) LL5.

  The exposure apparatus EX of the first embodiment may process at least one of the drawing position adjustment processes performed by the control apparatus in step S4 described above. Further, the exposure apparatus EX of the first embodiment may perform processing by combining the above-described drawing position adjustment processing by the control device in step S4.

  Due to the substrate processing apparatus adjustment method described above, the exposure apparatus EX of the first embodiment does not require test exposure to suppress the joint error between the patterns PT1 to PT5 adjacent in the width direction (Y direction) of the substrate P. Or the number of times is drastically reduced. For this reason, the exposure apparatus EX of the first embodiment can shorten the calibration work that takes time such as the test exposure, the drying and development process, and the confirmation of the exposure result. And the exposure apparatus EX of 1st Embodiment can suppress the waste of the board | substrate P for the frequency | count of feedback by test exposure. The exposure apparatus EX according to the first embodiment can early acquire adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors. The exposure apparatus EX according to the first embodiment corrects in advance based on adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors, so that the X direction or Y It is possible to easily correct each component such as shift, rotation, and magnification in the direction. And the exposure apparatus EX of 1st Embodiment can raise the precision which carries out a superposition exposure on the board | substrate P. FIG.

  In the exposure apparatus EX of the first embodiment, the example in which the optical deflector 81 includes an acousto-optic element and the drawing beam LB is spot-scanned by the rotating polygon mirror 97 has been described. However, in addition to spot scanning, a DMD (Digital Micro mirror) is used. A pattern may be drawn using a device (SLM) or a spatial light modulator (SLM).

[Second Embodiment]
Next, an exposure apparatus EX according to the second embodiment will be described. In the second embodiment, only parts that are different from the first embodiment will be described in order to avoid the description overlapping with the first embodiment, and the same components as those in the first embodiment are the same as those in the first embodiment. A description will be given with reference numerals.

  In the exposure apparatus EX of the second embodiment, the photoelectric sensor 31Cs of the calibration detection system 31 is not a reference pattern (which can also be used as a reference mark) RMP but reflected light (scattered) of the alignment marks Ks1 to Ks3 on the substrate P. Light). The alignment marks Ks1 to Ks3 are arranged at positions on the substrate P in the Y direction passing through any of the drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5. When the spot light SP of the drawing beam LB scans the alignment marks Ks1 to Ks3, the scattered light reflected by the alignment marks Ks1 to Ks3 is received by the photoelectric sensor 31Cs in a bright field or a dark field.

  The controller 16 detects the edge positions of the alignment marks Ks1 to Ks3 based on a signal output from the photoelectric sensor 31Cs. Then, similarly to the first embodiment, the control unit 16 adjusts information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors from the detection signal detected by the photoelectric sensor 31Cs. Can be requested.

  Further, based on the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error, and the information detected by the alignment microscopes AM1 and AM2, the control unit 16 detects the substrate P. The drawing positions in the X direction or Y direction by the odd-numbered and even-numbered drawing units UW1 to UW5 can be adjusted so as to cancel the error in the X direction or the Y direction. When the spot light SP of the drawing beam LB is projected onto the alignment marks Ks1 to Ks3, the photosensitive layer on the alignment marks Ks1 to Ks3 may be exposed, and the alignment marks Ks1 to Ks3 may be crushed in a subsequent process. It is preferable that a plurality of alignment marks Ks1 to Ks3 are provided and the alignment microscopes AM1 and AM2 read the alignment marks Ks1 to Ks3 that were not crushed by exposure.

  Therefore, in the exposure apparatus EX of the second embodiment, the vicinity of the alignment marks Ks1 to Ks3 that may be crushed by exposure is scanned with the spot light SP of the drawing beam LB, and the alignment marks Ks1 to Ks3 that are not to be crushed by exposure are scanned. Data for turning on / off the optical deflector (AOM) 81 can be included in the pattern drawing data so that the spot light SP is not irradiated in the vicinity. This makes it possible to acquire calibration information in almost real time and to read the alignment marks Ks1 to Ks3 (positions of the substrate P) while exposing with the drawing beam LB.

  Similar to the exposure apparatus EX of the first embodiment, the exposure apparatus EX of the second embodiment does not require test exposure for suppressing splicing errors or the number of times is drastically reduced. In addition, in the exposure apparatus EX of the second embodiment, while pattern exposure is performed on the substrate P, error information such as an arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement relation is measured, and adjustment information corresponding thereto is measured. (Calibration information) can be acquired early (almost in real time). Therefore, in the exposure apparatus EX of the second embodiment, correction and adjustment are performed so as to maintain a predetermined accuracy while exposing the device pattern based on error information or adjustment information (calibration information) measured early. It can be performed sequentially, and it is easy to suppress a decrease in splicing accuracy between drawing units that takes into account each error component such as a shift error, a rotation error, and a magnification error in the X direction or the Y direction, which is a problem in the multi drawing head method. It is possible. As a result, the exposure apparatus EX of the second embodiment can maintain a high overlay accuracy when performing overlay exposure on the substrate P.

<Device manufacturing method>
Next, a device manufacturing method will be described with reference to FIG. FIG. 25 is a flowchart showing the device manufacturing method of each embodiment.

  In the device manufacturing method shown in FIG. 25, first, for example, a function and performance design of a display panel using a self-luminous element such as an organic EL is performed, and necessary circuit patterns and wiring patterns are designed by CAD or the like (step S201). In addition, a supply roll on which a flexible substrate P (resin film, metal foil film, plastic, or the like) serving as a base material of the display panel is wound is prepared (step S202). Note that the roll-shaped substrate P prepared in step S202 has a surface modified as necessary, a base layer (for example, fine irregularities formed by an imprint method) previously formed, and light sensitivity. The functional film or transparent film (insulating material) previously laminated may be used.

  Next, a backplane layer composed of electrodes, wiring, insulating film, TFT (thin film semiconductor), etc. constituting the display panel device is formed on the substrate P, and an organic EL or the like is laminated on the backplane. A light emitting layer (display pixel portion) is formed by the self light emitting element (step S203). In this step S203, the exposure apparatus EX described in each of the previous embodiments is used, and a photosensitive silane coupling material is applied instead of the conventional photolithography process in which the photoresist layer is exposed and developed. An exposure process in which the substrate P is subjected to pattern exposure to modify the surface to be hydrophilic / hydrophobic to form a pattern, and the photosensitive catalyst layer is subjected to pattern exposure to impart selective plating reduction, and by electroless plating Processing by a wet process for forming a metal film pattern (wiring, electrode, etc.) or a printing process for drawing a pattern with a conductive ink containing silver nanoparticles is also included.

  Next, the substrate P is diced for each display panel device continuously manufactured on the long substrate P by a roll method, and a protective film (environmental barrier layer) or a color filter is formed on the surface of each display panel device. A device is assembled by pasting sheets or the like (step S204). Next, an inspection process is performed to determine whether the display panel device functions normally or satisfies desired performance and characteristics (step S205). As described above, a display panel (flexible display) can be manufactured. An electronic device created on a flexible long sheet substrate is not limited to a display panel, but a flexible wiring network as a harness (wiring bundle) for connection between various electronic components mounted on automobiles, trains, etc. It may be.

DESCRIPTION OF SYMBOLS 1 Device manufacturing system 11 Drawing apparatus 12 Board | substrate conveyance mechanism 13 Apparatus frame 14 Rotation position detection mechanism 16 Control part 23 1st optical surface plate 24 Movement mechanism 25 2nd optical surface plate 31 Calibration detection system 31Cs Photoelectric sensor 31f Light-shielding member 73 1st 4 beam splitter 81 optical deflector 83 scanner 96 reflecting mirror 97 rotating polygon mirror 97a rotating shaft 97b reflecting surface 98 origin detector AM1, AM2 alignment microscope DR rotating drum EN1, EN2, EN3, EN4 encoder head EX exposure apparatus I rotating shaft LL1 to LL5 Drawing line PBS Deflection beam splitter UW1 to UW5 Drawing unit

Claims (9)

A substrate processing method for drawing a pattern of an electronic device on a long sheet substrate,
Sending the sheet substrate in a long direction at a predetermined speed;
A beam in the ultraviolet wavelength region that is pulse-oscillated at a frequency Fz from a pulse light source device is focused on the spot light on the surface of the sheet substrate, and the beam is shaken by an optical scanner, whereby the spot light is Scanning one-dimensionally over a drawing line of length LBL extending in the width direction intersecting the direction of
Modulating the intensity of the spot light based on drawing data corresponding to the pattern during the scanning of the spot light, and
An interval along the drawing line between the spot light by the condensing of one pulse of the beam and the spot light by the condensing of the next one pulse is defined as CXs, and an effective dimension of the spot light along the drawing line is set. Xs, where Ts is a scanning time during which the spot light scans the length LBL, Xs> CXs and Fz> LBL / (Ts · Xs) are set so as to satisfy the relationship.
Substrate processing method. The substrate processing method according to claim 1,
The pulse light source device includes a configuration that oscillates the beam in response to a clock pulse having a frequency Fz from a clock generation unit,
The optical scanner has a configuration capable of adjusting the scanning time Ts by changing a speed of shaking the beam,
Adjusting at least one of the scanning time Ts and the frequency Fz of the clock pulse so that a ratio CXs / Xs between the dimension Xs and the interval CXs is set within a predetermined range;
Substrate processing method. The substrate processing method according to claim 2,
When the period of the clock pulse determined by the frequency Fz is Δwp, the clock generation unit sets the period Δwp of the clock pulse at one or a plurality of discrete points during the scanning time Ts to ± ΔTd (provided that , ΔTd <Δwp), and a configuration for correcting to a period Δwp ′ increased or decreased,
Enlarging or reducing the overall dimensions of the drawing pattern along the drawing lines with respect to the design dimensions defined by the drawing data;
Substrate processing method. The substrate processing method according to claim 3,
The clock generator changes the period Δwp of the clock pulse to a corrected period Δwp ′ every time the number of the clock pulses generated during the scanning time Ts reaches a predetermined value Nck.
Substrate processing method. The substrate processing method according to claim 4,
The predetermined value Nck is the number of the clock pulses output within a time during which the spot light scans one length obtained by equally dividing the length LBL of the drawing line in the scanning direction.
Substrate processing method. A substrate processing method according to any one of claims 1 to 5,
The pulse light source device includes a light source that generates light of a fundamental wave, a fiber amplifier, and a wavelength conversion element that converts the light of the fundamental wave into a beam in the ultraviolet wavelength region.
Substrate processing method. A substrate processing method for drawing a pattern of an electronic device on a long sheet substrate,
Sending the sheet substrate at a predetermined speed in a long direction;
A beam in the ultraviolet wavelength region that is pulse-oscillated at a frequency Fz from a pulse light source device is condensed onto spot light on the surface of the sheet substrate, and the spot light is crossed in the width direction intersecting with the long direction of the sheet substrate. Scanning in one dimension over an extended drawing line;
Modulating the intensity of the beam by an optical switching element based on drawing data obtained by dividing the pattern into pixel units during scanning of the spot light, and
The response frequency Fss during modulation of the optical switching element and the pulse oscillation frequency Fz of the beam are set to a relationship of Fz> Fss.
Substrate processing method. The substrate processing method according to claim 7, comprising:
The pulse oscillation frequency Fz of the beam and the response frequency Fss during modulation of the optical switching element are set to a relationship of Fz = h · Fss, where h is an integer of 2 or more.
Substrate processing method. The substrate processing method according to claim 7 or 8, wherein
The pulse light source device comprises a laser light source that oscillates a fundamental laser beam at the frequency Fz, a fiber amplifier that amplifies the fundamental laser beam, and the amplified fundamental laser beam into a beam in the ultraviolet wavelength region. A wavelength conversion unit for conversion,
The frequency Fz is set to several KHz to several hundred MHz.
Substrate processing method.

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