JP2019068192A - Manufacturing apparatus of piezoelectric substrate and manufacturing method of piezoelectric substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To adjust processing accuracy and processing efficiency. SOLUTION: The first electrode is a first electrode 10 and a second electrode 20 facing each other with a piezoelectric substrate interposed therebetween, and the second electrode 20 has a plurality of partial electrodes 21 and 23 whose relative positions are fixed to each other. A switch unit 67 that selects the electrical connection state of the 10 and the second electrode 20, the plurality of partial electrodes 21 and 23 and functions as a processing electrode or a measurement electrode, a supply unit 40 that supplies the processing gas, and a first unit. A voltage is applied between the electrode 10 and the processed electrode to turn the processing gas into plasma to perform surface treatment on the piezoelectric substrate, and a voltage is applied between the first electrode 10 and the measuring electrode to perform electricity. A measuring unit 63 that measures the thickness of the piezoelectric substrate based on the specific characteristics, a driving unit 30 that changes the relative position between the first electrode 10 and the second electrode 20, a switch unit 67, a supply unit 40, and a processing unit 65. , A measuring unit 63, and a control unit 61 for controlling the driving unit 30. [Selection diagram] Fig. 1

Description

  The present invention relates to an apparatus for manufacturing a piezoelectric substrate and a method for manufacturing a piezoelectric substrate, which are provided for manufacturing a piezoelectric piece that constitutes a piezoelectric vibrating element together with an excitation electrode or the like.

  The piezoelectric pieces that constitute the piezoelectric vibration element are manufactured by separating a piezoelectric substrate (for example, a piezoelectric wafer). In a piezoelectric vibrating element such as a quartz vibrating element utilizing a thickness shear vibration mode, the thickness of the piezoelectric piece has a great influence on the frequency characteristics, and therefore, it is required to improve the thickness accuracy in the state of the piezoelectric substrate.

  For example, Patent Document 1 includes an electrode used for both measurement and processing, acquires the thickness distribution of the piezoelectric substrate using the electrode, and etches the amount of plasma using the electrode based on the distribution of the thickness. A crystal processing apparatus is disclosed that determines for each position of the electrode. According to this, since the electrode and the positioning portion of the electrode are the same, the positional error between the measurement process and the processing process can be reduced, and the processing accuracy can be improved.

JP, 2015-146512, A

  However, in the configuration described in Patent Document 1, since the electrode is used both for measurement and processing, the measurement accuracy per unit area and the processing accuracy are correlated, and the measurement efficiency per unit area and the processing efficiency are also correlated. For example, if the area of the facing surface located at the tip of the electrode is reduced to increase the measurement accuracy of the thickness distribution, the processing area that can be processed by one processing decreases, and the processing efficiency decreases. Conversely, if the area of the facing surface of the electrode is increased to enhance the measurement efficiency, the processing efficiency is improved but the processing accuracy is reduced.

  The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a piezoelectric substrate manufacturing apparatus and a piezoelectric substrate manufacturing method capable of adjusting processing accuracy and processing efficiency.

  An apparatus for manufacturing a piezoelectric substrate according to an aspect of the present invention is a first electrode and a second electrode facing each other across the piezoelectric substrate, and the second electrode has a plurality of partial electrodes whose relative positions are fixed to each other. , A switch unit which selects an electrical connection state of the first electrode and the second electrode and the plurality of partial electrodes and which functions as a processing electrode or a measurement electrode, a supply unit for supplying a processing gas, a first electrode and processing A voltage is applied between the first electrode and the electrode, the processing gas is plasmatized, and a voltage is applied between the first electrode and the measurement electrode to perform surface treatment on the piezoelectric substrate, and piezoelectric based on electrical characteristics. A measurement unit that measures the thickness of the substrate, a drive unit that changes the relative position between the first electrode and the second electrode, a control unit that controls the switch unit, the supply unit, the processing unit, the measurement unit, and the drive unit; Equipped with

  An apparatus for manufacturing a piezoelectric substrate according to another aspect of the present invention is a first electrode and a second electrode facing each other with the piezoelectric substrate interposed therebetween, wherein the second electrode is a measurement electrode whose relative position is fixed to each other A voltage is applied between a first electrode and a second electrode having a processing electrode, a supply unit for supplying a processing gas, and the first electrode and the processing electrode to convert the processing gas into a plasma to treat the surface of the piezoelectric substrate A measurement unit that applies a voltage between the first electrode and the measurement electrode to measure the thickness of the piezoelectric substrate based on the electrical characteristics, and a relative position between the first electrode and the second electrode. The control unit includes a drive unit to be changed, a supply unit, a processing unit, a measurement unit, and a control unit for controlling the drive unit. The measurement electrode and the processing electrode have different shapes of opposing surfaces facing the first electrode.

  A method of manufacturing a piezoelectric substrate according to an aspect of the present invention includes the steps of: disposing a piezoelectric substrate between a first electrode and a second electrode having a plurality of partial electrodes whose relative positions are fixed to each other; The thickness of the piezoelectric substrate is selected based on the electrical characteristics when the first electrical connection state of the partial electrode is selected to cause the second electrode to function as the measurement electrode and a voltage is applied between the first electrode and the measurement electrode. Measuring the step, calculating the amount of machining based on the thickness, and selecting the second electrical connection state of the plurality of partial electrodes to cause the second electrode to function as the machining electrode, and the first electrode and the machining electrode And applying a voltage between them to plasmatize the processing gas, and surface-treating the piezoelectric substrate based on the processing amount.

  According to the present invention, it is possible to provide a piezoelectric substrate manufacturing apparatus and a piezoelectric substrate manufacturing method capable of adjusting processing accuracy and processing efficiency.

FIG. 1 is a view schematically showing the configuration of a piezoelectric substrate manufacturing apparatus according to the first embodiment. FIG. 2 is a plan view schematically showing a configuration of the second electrode according to the first embodiment when the facing surface of the second electrode is viewed in plan. FIG. 3 is a flow chart schematically showing a measurement process of the method of manufacturing a piezoelectric substrate according to the first embodiment. FIG. 4 is a flowchart schematically showing the processing steps of the method of manufacturing a piezoelectric substrate according to the first embodiment. FIG. 5 is a view schematically showing the configuration of a piezoelectric substrate manufacturing apparatus in the process of mounting the piezoelectric substrate on the first electrode. FIG. 6 is a view schematically showing the configuration of a piezoelectric substrate manufacturing apparatus in the measurement process. FIG. 7 schematically shows switching of the connection state. FIG. 8 is a view schematically showing the configuration of a manufacturing apparatus of a piezoelectric substrate in a processing step. FIG. 9 is a view schematically showing the configuration of a piezoelectric substrate manufacturing apparatus according to the second embodiment. FIG. 10 is a plan view schematically showing a configuration of the second electrode according to the second embodiment when the facing surface of the second electrode is viewed in plan. FIG. 11 is a plan view schematically showing a configuration of the second electrode according to the third embodiment when the facing surface of the second electrode is viewed in plan. FIG. 12 is a plan view schematically showing a configuration of the second electrode according to the fourth embodiment when the facing surface of the second electrode is viewed in plan. FIG. 13 is a plan view schematically showing a configuration of the second electrode according to the fifth embodiment when the facing surface of the second electrode is viewed in plan.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, in the second embodiment and thereafter, the same or similar components as or to those of the first embodiment are denoted by the same or similar reference numerals as those of the first embodiment, and the detailed description will be appropriately omitted. Further, with regard to the effects obtained in the second and subsequent embodiments, the description of the same effects as those of the first embodiment will be appropriately omitted. The drawings of the respective embodiments are exemplifications, and the dimensions and shapes of the respective parts are schematic, and the technical scope of the present invention should not be interpreted as being limited to the embodiments.

First Embodiment
First, the configuration of a piezoelectric substrate manufacturing apparatus 100 according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a view schematically showing the configuration of a piezoelectric substrate manufacturing apparatus according to the first embodiment. FIG. 2 is a plan view schematically showing a configuration of the second electrode according to the first embodiment when the facing surface of the second electrode is viewed in plan.

  The piezoelectric substrate manufacturing apparatus 100 is an apparatus for performing an etching process on a piezoelectric substrate by plasma. The piezoelectric substrate manufacturing apparatus 100 includes a first electrode 10, a second electrode 20, a drive unit 30, a supply unit 40, a cover 50, a control unit 61, a measurement unit 63, a processing unit 65, and a switch unit 67.

  The first electrode 10 is a plate-like electrode whose upper surface (mounting surface 10A) provided on the stage of the manufacturing apparatus 100 for a piezoelectric substrate is flat, and corresponds to a lower electrode. In operation, the piezoelectric substrate is disposed on the mounting surface 10A of the first electrode 10. Although not shown, the manufacturing apparatus 100 for a piezoelectric substrate includes an air chuck that sucks and holds the piezoelectric substrate. The first electrode 10 has a suction hole capable of sucking the piezoelectric substrate

  The second electrode 20 forms a pair with the first electrode 10 and functions as a measurement electrode or a processing electrode. That is, the second electrode 20 has the facing surface 20A facing the first electrode 10, and forms an electric field between the mounting surface 10A of the first electrode 10 and the facing surface 20A of the second electrode 20. It is an electrode for When functioning as a measurement electrode, the second electrode 20 vibrates the piezoelectric substrate to form an electric field for calculating the thickness of the piezoelectric substrate from its frequency characteristics. When functioning as a processing electrode, the second electrode 20 plasmifies a processing gas to be described later on the piezoelectric substrate to form an electric field for etching the piezoelectric substrate.

  The second electrode 20 includes a plurality of partial electrodes 21 and 23 whose relative positions are fixed to each other. The plurality of partial electrodes 21 and 23 are electrically isolated from each other and adjacent to each other. When the second electrode 20 functions as a measurement electrode or a processing electrode, a voltage is selectively applied to at least one partial electrode. For example, when functioning as a measurement electrode, a voltage is applied to the partial electrode 21, and when functioning as a processing electrode, a voltage is applied to the partial electrode 21 and the partial electrode 23.

  When the facing surface 20A is viewed in plan, the partial electrode 21 is provided at the center, and the partial electrode 23 is provided so as to surround the central electrode. The partial electrode 21 corresponds to a center electrode, and the partial electrode 23 corresponds to a peripheral electrode. The facing surface 21A of the partial electrode 21 is circular, and the center of the facing surface 21A coincides with the center of the facing surface 20A of the second electrode 20. The opposing surface 23A of the partial electrode 23 has a circular outer periphery, and the center of the outer periphery of the opposing surface 23A overlaps the center of the opposing surface 20A of the second electrode 20. The facing surface 21A is a similar shape of the facing surface 20A, that is, a shape combining the facing surface 21A and the facing surface 23A. Since the opposing surface 21A of the partial electrode 21 has a shape similar to the combined shape of the opposing surface 21A of the partial electrode 21 and the opposing surface 23A of the partial electrode 23, the center of the opposing surface of the measurement electrode is It can be made to coincide with the center. Therefore, the position of the processing electrode can be easily aligned with the processing amount distribution calculated from the thickness distribution, and the processing accuracy can be improved.

  In this configuration example, the manufacturing apparatus 100 of the piezoelectric substrate can improve the measurement accuracy and the processing accuracy by making the shape of the facing surface of the measurement electrode different from the shape of the facing surface of the processing electrode. If the area of the opposing surface of the measurement electrode is made larger than the area of the opposing surface of the processing electrode, the measurement efficiency can be improved and the processing accuracy can be improved. Conversely, if the area of the facing surface of the measurement electrode is smaller than the area of the facing surface of the processing electrode, the measurement accuracy can be improved and the processing efficiency can be improved. Further, since the plurality of partial electrodes 21 and 23 are electrically insulated from each other and adjacent to each other, it is possible to reduce an error in positioning which occurs in the measurement step and the processing step.

  Further, since the plurality of partial electrodes 21 and 23 are concentric, corner portions are not formed on the opposing surfaces as the measurement electrodes or the processing electrodes, and the occurrence of electric field concentration can be suppressed. That is, the deterioration of the measurement accuracy and the processing accuracy can be suppressed.

  The inter-electrode distance between the opposing surface 21A of the partial electrode 21 and the mounting surface 10A of the first electrode 10 is the inter-electrode distance between the opposing surface 23A of the partial electrode 23 and the mounting surface 10A of the first electrode 10 Equal to That is, the opposing surface 21A and the opposing surface 23A are located in the same plane. According to this, even if the partial electrode to which a voltage is applied is switched, the inter-electrode distance between the plurality of partial electrodes and the first electrode can be kept constant.

  The inter-electrode distances between the facing surfaces of the plurality of partial electrodes and the mounting surface 10A of the first electrode 10 may be different from each other. That is, the inter-electrode distance of the measurement electrode may be different from the inter-electrode distance of the processing electrode. When switching the operation from the measurement step to the processing step, the second electrode 20 is used as the first electrode by optimizing the distance between the measurement electrode and the processing electrode to the inter-electrode distance obtained in the measurement step and the processing step. It is not necessary to move along the normal method of the ten mounting surfaces 10A. That is, the relative movement of the second electrode 20 with respect to the first electrode 10 can be reduced, and the processing accuracy can be improved.

  The drive unit 30 changes the relative position between the first electrode 10 and the second electrode 20, and causes the first electrode 10 and the second electrode 20 to face each other at the measurement position of the thickness of the piezoelectric substrate or at the position of the surface treatment. The driving unit 30 holds the plurality of partial electrodes 21 and 23 constituting the second electrode 20, and moves the plurality of partial electrodes 21 and 23 integrally. The first electrode 10 serves as a table on which the piezoelectric substrate is placed, and by moving the plurality of partial electrodes 21 and 23 forming the first electrode 10 pair, bending of the piezoelectric substrate can be suppressed and measurement accuracy can be improved. In addition, the drive part 30 may move the 1st electrode 10 which mounted the piezoelectric substrate.

The supply unit 40 includes a cylinder, piping, an on-off valve, and the like, which are not shown, and supplies a processing gas to be converted into plasma. As a processing gas for etching a quartz substrate, one obtained by mixing a carrier gas such as argon (Ar) with a process gas consisting of carbon tetrafluoride (CF ₄ ) and oxygen (O ₂ ) can be mentioned as an example. . The supply unit 40 can adjust the processing speed by adjusting the mixing ratio of the process gas to the carrier gas in the processing gas and the supply amount of the processing gas. The supply unit 40 may further mix H ₂ gas with the processing gas, thereby reducing the processing speed. That is, the processing amount of the quartz substrate can be adjusted more finely.

  The cover 50 surrounds the second electrode 20 so that the tip is exposed, and has an internal space 51 to which the processing gas is supplied from the supply unit 40. The cover 50 has a gap 53 between it and the opposing surface 20A of the second electrode 20. The processing gas spreads to the internal space 51 and flows out of the gap 53 with the inner side of the cover 50 being at a positive pressure with respect to the outer side. That is, the cover 50 corresponds to a nozzle that guides the processing gas to the tip of the second electrode 20. When the manufacturing apparatus 100 of a piezoelectric substrate is an open air plasma etching apparatus, the cover 50 can suppress the diffusion of the processing gas and improve the utilization efficiency of the processing gas. When the manufacturing apparatus 100 for a piezoelectric substrate is a vacuum sealed type plasma etching apparatus, the cover 50 can reduce the loss of processing gas due to vacuum suction. That is, with the cover 50, the piezoelectric substrate manufacturing apparatus 100 can generate plasma efficiently. By supplying the processing gas from the gap 53 to the tip of the second electrode 20, the etched exhaust gas can be replaced with the unreacted processing gas at the tip of the second electrode 20. That is, the uniformity of the plasma concentration can be maintained, and the processing accuracy can be improved.

  The control unit 61 controls the drive unit 30, the supply unit 40, the measurement unit 63, the processing unit 65, and the switch unit 67 to process the piezoelectric substrate. The control unit 61 is a microcomputer including, for example, a CPU, a ROM, a RAM, an input / output interface, and the like. The control unit 61 adjusts the amount of processing so that, for example, the thickness of the piezoelectric substrate becomes uniform. The control unit 61 may set the processing amount such that the thickness of the piezoelectric substrate changes in the piezoelectric substrate. The control unit 61 controls the drive unit 30 to change the relative position of the second electrode 20 to the first electrode 10. The control unit 61 controls the supply unit 40 to adjust the supply amount of the processing gas. The control unit 61 controls the measuring unit 63 to measure the thickness of the piezoelectric substrate. The control unit 61 controls the processing unit 65 to perform surface treatment on the piezoelectric substrate. The control unit 61 controls the switch unit 67 to select the electrical connection state of the plurality of partial electrodes 21 and 23 constituting the second electrode 20.

  The measurement unit 63 applies a voltage between the first electrode 10 and the second electrode 20, and measures the thickness of the piezoelectric substrate based on the frequency characteristic which is a type of electrical characteristic. The measuring unit 63 includes, for example, an integrated circuit (IC) chip including an oscillator, an amplifier and the like, and corresponds to a measuring circuit. At this time, a voltage is applied to at least one of the partial electrodes so that the opposing surface has a desired shape, and the second electrode 20 functions as a measurement electrode. For example, when the piezoelectric substrate is an AT cut type quartz substrate, the thickness d [m] of the quartz substrate and the frequency f [Hz] are used. It is assumed that f = 1670 / d holds at the frequency f of the thickness shear vibration mode. In this case, the thickness d can be calculated by measuring the frequency f.

In addition, the measurement part 63 is not limited to the measurement based on a frequency characteristic, It may be a measurement based on an electrostatic capacitance. At this time, assuming that the thickness d [m] of the object to be measured, the area S [m ² ] of the opposing surface of the measuring electrode, the dielectric constant 、 of the object to be measured, and the capacitance C [F], then C = εS / d holds. Do. In this case, the thickness d can be calculated by measuring the capacitance C.

The processing unit 65 applies a voltage between the first electrode 10 and the second electrode 20 to plasmify the processing gas and perform surface treatment on the piezoelectric substrate. The processing unit 65 is, for example, an IC chip and corresponds to a processing circuit. That is, etching is performed by plasma. At this time, a voltage is applied to at least one partial electrode so that the opposing surface has a desired shape, and the second electrode 20 functions as a processing electrode. The processing unit 65 applies a high frequency voltage of 13.56 MHz, for example, between the first electrode 10 and the processing electrode. As a result, F radicals generated in the CF ₄ plasma react with Si in SiO _{2 to form} SiF ₄ having a high vapor pressure, which is exhausted. At the same time, O in SiO ₂ is exhausted as CO 2 _X. The processing unit 65 applies, for example, voltages of the same phase to the plurality of partial electrodes 21 and 23, respectively. The processing unit 65 may apply voltages of different phases to the plurality of partial electrodes 21 and 23, respectively.

  The switch unit 67 corresponds to a switch circuit including a plurality of switches. The switch unit 67 switches the plurality of switches to select the electrical connection state of the plurality of partial electrodes 21 and 23 constituting the second electrode 20. The electrical connection state referred to here indicates which of the plurality of partial electrodes 21 and 23 is connected to the measurement unit 63 or which of the plurality of partial electrodes 21 and 23 is connected to the processing unit 65 It is shown.

  As described above, the measurement area in the measurement process is positioned by the drive unit 30 controlled by the control unit 61, and the processing area in the processing process is also positioned by the drive unit 30 similarly controlled by the control unit 61. For this reason, the positioning error which arises in a measurement process and a processing process can be reduced, and processing accuracy can be raised.

  Furthermore, the piezoelectric substrate manufacturing apparatus 100 selects the electrical connection state of the plurality of partial electrodes 21 and 23 that constitute the second electrode 20, and a part or all of the second electrode 20 serves as a measurement electrode or a processing electrode. Make it work. Thereby, at least one of the plurality of partial electrodes is selected as the measurement electrode so as to be a facing surface suitable as a measurement electrode, and at least one is processed from the plurality of partial electrodes so as to be a facing surface suitable as a processing electrode It can be selected as an electrode.

  In this configuration example, the plurality of partial electrodes are integrally formed adjacent to each other, but may be separated as long as their relative positions are fixed. For example, the plurality of partial electrodes may be spaced apart from one another so as to be surrounded by the cover 50.

  Further, in the present configuration example, if the shape of the facing surface when functioning as a measurement electrode is different from the shape of the facing surface when functioning as a processing electrode, the second electrode 20 is selectively used as a measuring electrode or processing electrode There is no limitation on the position, combination, etc. of partial electrodes to which a voltage is applied. Alternatively, if the area of the facing surface when functioning as a measurement electrode is different from the area of the facing surface when functioning as a processing electrode, the position, combination of partial electrodes to which a voltage is selectively applied as the measurement electrode or processing electrode Etc. is not limited.

  For example, the partial electrode 21 may function as a measurement electrode, and the partial electrode 21 and the partial electrode 23 may function as a processing electrode. That is, one partial electrode 21 may function as a measurement electrode and also as a processing electrode. When only one partial electrode is selectively applied with a voltage as a measurement electrode, and only one partial electrode is selectively applied with a voltage as a processing electrode, the measurement electrode and the processing electrode are respectively Different partial electrodes are selected. When one partial electrode of the plurality of partial electrodes is selected as both the measurement electrode and the processing electrode, the measurement electrode and the processing electrode are selected by a combination of partial electrodes in which the shapes or sizes of the opposing surfaces are different from each other Be done.

  The facing surface of the processing electrode may be changed in shape, position, and size in the middle of the processing step. That is, in the middle of the processing step, the partial electrode selected as the processing electrode may change. For example, the partial electrode 21 is connected to the processing portion 65 in the first processing connection state, the partial electrode 22 is connected to the processing portion 65 in the second processing connection state, and the first processing connection is in the second electrical connection state. The etching process may be performed while alternately switching the state and the second processing connection state. Thus, by performing the etching process while changing the second electrical connection state with time, the plasma is rotated between the first electrode 10 and the second electrode 20 to make the plasma concentration uniform. it can. Note that voltages having different phases may be applied to the partial electrode 21 and the partial electrode 23 in each of the first processing connection state and the second processing connection state.

  Next, a method of manufacturing a piezoelectric substrate using the manufacturing device 100 of the piezoelectric substrate according to the first embodiment will be described with reference to FIGS. FIG. 3 is a flow chart schematically showing a measurement process of the method of manufacturing a piezoelectric substrate according to the first embodiment. FIG. 4 is a flowchart schematically showing the processing steps of the method of manufacturing a piezoelectric substrate according to the first embodiment. FIG. 5 is a view schematically showing the configuration of a piezoelectric substrate manufacturing apparatus in the process of mounting the piezoelectric substrate on the first electrode. FIG. 6 is a view schematically showing the configuration of a piezoelectric substrate manufacturing apparatus in the measurement process. FIG. 7 schematically shows switching of the connection state. FIG. 8 is a view schematically showing the configuration of a manufacturing apparatus of a piezoelectric substrate in a processing step.

  In the measurement step, first, the piezoelectric substrate 70 is placed on the first electrode 10 (S11). As shown in FIG. 5, the piezoelectric substrate 70 is disposed between the first electrode 10 and the second electrode 20. The piezoelectric substrate 70 has a pair of main surfaces 70A and 70B facing each other, and one main surface 70B is in contact with the first electrode 10 and the other main surface 70A is opposite to the second electrode 20 with a gap. Will be placed.

  Next, a measurement electrode is selected from the second electrode 20 (S12). Here, as shown in FIG. 6, among the plurality of partial electrodes 21 and 23 constituting the second electrode 20, the partial electrode 21 having a smaller area of the facing surface 21A is selected. By this, the measurement area | region 71 used as the object of one measurement in the piezoelectric substrate 70 is shrunk | reduced, and the measurement density improvement of thickness distribution is aimed at.

  Next, the measurement electrode is electrically connected to the measurement unit 63 (S13). As shown in FIG. 6, the control unit 61 controls the switch unit 67 to realize a first electrical connection state of the plurality of partial electrodes 21 and 23. In the first electrical connection state, the portion between the partial electrode 21 selected in step S12 and the measuring portion 63 is closed, and the portion between the partial electrode 23 and the measuring portion 63 is open. In addition, both the partial electrode 21 and the partial electrode 23 and the processing portion 65 are open.

  Next, the second electrode 20 is moved (S14). Here, the facing surface 21A of the partial electrode 21 functioning as the measurement electrode of the second electrode 20 is made to face the predetermined measurement region 71 of the piezoelectric substrate 70. The drive unit 30 integrally moves the second electrode 20, the supply unit 40, and the cover 50 whose relative positions are fixed to each other.

  Next, the thickness is measured (S15). A voltage is applied between the first electrode 10 and the partial electrode 21, and the frequency in the measurement area 71 is measured. The thickness of the measurement area 71 is calculated based on this frequency. After the measurement in the measurement area 71 is completed, the second electrode 20 is moved again, and the thickness is measured in another measurement area. Thus, the thickness distribution of the piezoelectric substrate 70 is measured by repeating the step S14 and the step S15. After the measurement of the distribution of the thickness of the piezoelectric substrate 70 is completed, the process proceeds to the processing step.

  In the processing step, first, the distribution of the processing amount is calculated (S21). From the distribution of the thickness measured in the measurement step and the target value of the thickness of the piezoelectric substrate 70 to be manufactured, the distribution of the required processing amount is calculated.

  Next, a processing electrode is selected from the second electrode 20 (S22). Here, as shown in FIG. 7, both the partial electrode 21 and the partial electrode 23 are selected so that the area of the facing surfaces 21A and 23A is the largest among the plurality of partial electrodes 21 and 23. As a result, in the piezoelectric substrate 70, the processing area 73 to be processed once is expanded to improve the processing efficiency.

  Next, the processing electrode is electrically connected to the processing unit 65 (S23). As shown in FIG. 7, the control unit 61 controls the switch unit 67 to realize the second electrical connection state of the plurality of partial electrodes 21 and 23. In the second electrical connection state, the portion between the partial electrode 21 selected in step S22 and the processing portion 65 is closed, and the portion between the partial electrode 23 and the processing portion 65 is also closed. Further, both the partial electrode 21 and the partial electrode 23 and the measuring unit 63 are open.

  Next, the processing gas 41 is supplied (S24). As shown in FIG. 8, the supply unit 40 supplies the processing gas 41 to the internal space 51 of the cover 50. The processing gas 41 filled in the internal space 51 is supplied onto the main surface 70 B of the piezoelectric substrate 70 through the gap 53. Here, “on the piezoelectric substrate 70” means between the major surface 70 B of the piezoelectric substrate 70 and the opposing surface 21 A of the partial electrode 21 and between the major surface 70 B of the piezoelectric substrate 70 and the opposing surface 23 A of the partial electrode 23. Equivalent to. The supply speed of the processing gas 41 onto the main surface 70 B of the piezoelectric substrate 70 is determined by the internal pressure of the internal space 51 and the cross-sectional area of the gap 53.

  Next, the second electrode 20 is moved (S25). Here, the opposing surface 21A and the opposing surface 23A of the partial electrode 21 and the partial electrode 23B which function as measurement electrodes in the second electrode 20 are made to face a predetermined processing region 73 in the piezoelectric substrate 70. The drive unit 30 integrally moves the second electrode 20, the supply unit 40, and the cover 50 whose relative positions are fixed to each other.

  Next, etching is performed by plasma (S26). A voltage is applied between the first electrode 10 and the partial electrode 21 and between the first electrode 10 and the partial electrode 23 to plasmatize the processing gas 41 on the processing area 73. The main surface 70A of the processing area 73 is etched based on the distribution of the processing amount calculated in step S21. When the etching process in the processing area 73 is finished, the second electrode 20 is moved again to etch the main surface 70A of another processing area. As described above, by repeating the process S25 and the process S26, the distribution of the thickness of the piezoelectric substrate 70 is brought close to the target value.

Second Embodiment
A piezoelectric substrate manufacturing apparatus 200 according to the second embodiment will be described with reference to FIGS. 9 and 10. FIG. 9 is a view schematically showing the configuration of a piezoelectric substrate manufacturing apparatus according to the second embodiment. FIG. 10 is a plan view schematically showing a configuration of the second electrode according to the second embodiment when the facing surface of the second electrode is viewed in plan.

  The piezoelectric substrate manufacturing apparatus 200 includes a first electrode 210, a second electrode 220, a drive unit 230, a supply unit 240, a cover 250, a control unit 261, a measurement unit 263, a processing unit 265, and a switch unit 267. The piezoelectric substrate manufacturing apparatus 200 according to the second embodiment is different from the piezoelectric substrate manufacturing apparatus 100 according to the first embodiment in that at least one through hole H is formed in the second electrode 220. .

  The through hole H penetrates from the inward surface 220B on the inner space 251 side of the second electrode 220 to the opposing surface 220A on the first electrode 210 side. The through hole H supplies the processing gas supplied from the supply unit 240 to the inner space 251 of the cover 250 between the first electrode 210 and the second electrode 220. The through holes H are formed in both the partial electrode 221 and the partial electrode 223. When viewed in plan from the opposing surface 221A of the partial electrode 221, the plurality of through holes H are arranged in the partial electrode 221. Further, when viewed in plan from the opposing surface 223A of the partial electrode 223, the plurality of through holes H are arranged in the partial electrode 223. In order to supply the processing gas uniformly, it is desirable that the cross-sectional area of each of the through holes H be small and the number of the through holes H be large when the facing surface 220A of the second electrode 220 is viewed in plan. According to this, the uniformity of the concentration of the processing gas between the first electrode 210 and the second electrode 220 can be improved. The shape of the through hole H is not particularly limited, and can be suitably designed such as a cylindrical shape, a slit shape, a porous shape, a combination thereof, and the like.

Third Embodiment
The configuration of the second electrode 320 according to the third embodiment will be described with reference to FIG. FIG. 11 is a plan view schematically showing a configuration of the second electrode according to the third embodiment when the facing surface of the second electrode is viewed in plan.

  The apparatus for manufacturing a piezoelectric substrate according to the third embodiment is the same as the apparatus for manufacturing a piezoelectric substrate 100 according to the first embodiment, with respect to parts not shown. The apparatus for manufacturing a piezoelectric substrate according to the third embodiment is that the apparatus for manufacturing a piezoelectric substrate according to the third embodiment includes the second electrode 320 including the partial electrode 321, the partial electrode 323, and the partial electrode 325. And is different.

  When the opposing surface 320A of the second electrode 320 is viewed in plan, the partial electrode 321 is located at the center, the partial electrode 323 surrounds the partial electrode 321, and the partial electrode 325 surrounds the partial electrode 323. The opposing surface 321A of the partial electrode 321, the opposing surface 323A of the partial electrode 323, and the opposing surface 325A of the partial electrode 325 are provided concentrically. The partial electrode 321 corresponds to a center electrode, the partial electrode 323 corresponds to a first peripheral electrode, and the partial electrode 325 corresponds to a second peripheral electrode. Such an embodiment can also obtain the same effects as those described above.

Fourth Embodiment
The configuration of the second electrode 420 according to the fourth embodiment will be described with reference to FIG. FIG. 12 is a plan view schematically showing a configuration of the second electrode according to the fourth embodiment when the facing surface of the second electrode is viewed in plan.

  The apparatus for manufacturing a piezoelectric substrate according to the fourth embodiment is the same as the apparatus for manufacturing a piezoelectric substrate 100 according to the first embodiment, with respect to parts not shown. The partial electrode 421 corresponding to the center electrode has an opposing surface 421A, and the partial electrode 423 corresponding to the first peripheral electrode has an opposing surface 423A. The piezoelectric substrate manufacturing apparatus according to the fourth embodiment is different from the piezoelectric substrate manufacturing apparatus 100 according to the first embodiment in that the partial electrode 423 surrounding the partial electrode 421 further includes a plurality of partial electrodes 427. .

  When the facing surface 420A of the second electrode 420 is viewed in plan, the plurality of partial electrodes 427 correspond to a plurality of radial electrodes radially divided from the center of the second electrode 420. That is, the plurality of partial electrodes 427 are provided in a fan shape.

  When the partial electrode 423 functions as a processing electrode, the partial electrode 427 to which a voltage is applied may be changed with time. For example, in the processing step, one to which a voltage is applied to the plurality of partial electrodes 427 may be switched to rotate clockwise about the partial electrode 421. According to this, the density and spatial distribution of plasma can be controlled.

Fifth Embodiment
The configuration of the second electrode 520 according to the fifth embodiment will be described with reference to FIG. FIG. 13 is a plan view schematically showing a configuration of the second electrode according to the fifth embodiment when the facing surface of the second electrode is viewed in plan.

  The apparatus for manufacturing a piezoelectric substrate according to the fifth embodiment is the same as the apparatus for manufacturing a piezoelectric substrate 100 according to the first embodiment, with respect to parts not shown. The partial electrode 521 corresponding to the center electrode has an opposing surface 521A, and the partial electrode 523 corresponding to the first peripheral electrode has an opposing surface 523A. The piezoelectric substrate manufacturing apparatus according to the fifth embodiment is different from the piezoelectric substrate manufacturing apparatus 100 according to the first embodiment in that the opposing surface 520A of the second electrode 520 is rectangular. The opposing surface 521A of the partial electrode 521 is also rectangular, and the outer periphery of the opposing surface 523A of the partial electrode 523 is also rectangular. Such an embodiment can also obtain the same effects as those described above.

  As described above, according to one aspect of the present invention, there are a plurality of portions in which the first electrode 10 and the second electrode 20 face each other across the piezoelectric substrate, and the second electrode 20 is fixed relative to each other. A switch unit 67 which selects an electrical connection state of the first electrode 10 and the second electrode 20 having the electrodes 21 and 23 and the plurality of partial electrodes 21 and 23 and functions as a processing electrode or a measurement electrode, and a processing gas , A voltage is applied between the first electrode 10 and the processing electrode, and the processing gas is plasmatized to process the surface of the piezoelectric substrate, the first electrode 10 and the measuring electrode Between the first electrode 10 and the second electrode 20, and a switch for measuring the thickness of the piezoelectric substrate based on the electrical characteristics, and the switch. Unit 67, supply unit 40, processing unit 65, Tough 63, and a control unit 61 for controlling the drive unit 30, the piezoelectric substrate manufacturing apparatus 100 having provided.

  According to the above aspect, at least one of the plurality of partial electrodes is selected as the measurement electrode so as to be a suitable opposed surface as the measurement electrode, and at least one of the plurality of partial electrodes is selected as the opposite surface suitable as the processing electrode. Can be selected as the processing electrode. That is, it is possible to adjust the processing accuracy and the processing efficiency independently of the adjustment of the measurement accuracy and the measurement efficiency.

  In the above-described piezoelectric substrate manufacturing apparatus, the shape of the facing surface facing the first electrode 10 of the measurement electrode may be different from the shape of the facing surface facing the first electrode 10 of the processing section. According to this, among the second electrodes, the partial electrodes to which a voltage is applied can be selected to have an appropriate facing surface shape in each of the measurement step and the processing step, so that the processing accuracy can be improved. it can.

  In the above-described piezoelectric substrate manufacturing apparatus, at least one of the plurality of partial electrodes 21 and 23 may function as a processing electrode and may also function as a measurement electrode. According to this, since the opposing surface of the processing electrode and the opposing surface of the measurement electrode partially overlap, it is possible to improve the accuracy of positioning of the processing region with respect to the measurement region. Therefore, the processing accuracy can be improved.

  In the above-described piezoelectric substrate manufacturing apparatus, the plurality of partial electrodes 21 and 23 may be adjacent to each other while being electrically insulated from each other. According to this, it is possible to reduce the positioning error that occurs in the measurement process and the processing process.

  In the above-described piezoelectric substrate manufacturing apparatus, the plurality of partial electrodes 21 and 23 at least includes the center electrode 21 and the center electrode 21 when the opposing surface 20A of the second electrode 20 facing the first electrode 10 is viewed in plan. And a surrounding first peripheral electrode 23.

  In the above-described piezoelectric substrate manufacturing apparatus, when the opposing surface 320A of the second electrode 320 is viewed in plan, the plurality of partial electrodes 321, 323, and 325 further form the second peripheral electrode 325 surrounding the outside of the first peripheral electrode 323. You may have.

  In the above-described piezoelectric substrate manufacturing apparatus, the plurality of partial electrodes 421 and 423 are radially divided from the center of the second electrode 420 when the facing surface of the second electrode 420 facing the first electrode is viewed in plan. The radial electrodes 427 may be provided.

  In the above-described piezoelectric substrate manufacturing apparatus, the facing surface 21A of the center electrode 21 facing the first electrode 10 is a combination of the facing surfaces 21A and 23A of the center electrode 21 and the first peripheral electrode 23 facing the first electrode 10 It may be similar to the shape. According to this, the center of the facing surface of the measurement electrode can be made to coincide with the center of the facing surface of the partial electrode. Therefore, the position of the processing electrode can be easily aligned with the processing amount distribution calculated from the thickness distribution, and the processing accuracy can be improved.

  In the piezoelectric substrate manufacturing apparatus described above, the facing surface 21A of the center electrode 21 facing the first electrode 10 is circular, and the facing surface 23A of the first peripheral electrode 23 facing the first electrode 10 has an outer periphery It may be circular. According to this, the corner portion is not formed on the opposing surface as the measurement electrode or the processing electrode, and the generation of the electric field concentration can be suppressed. Therefore, deterioration in measurement accuracy and processing accuracy can be suppressed.

  The above-described piezoelectric substrate manufacturing apparatus may further include a cover 50 that encloses the second electrode 20 so that the tip is exposed and has an internal space 51 to which the processing gas is supplied from the supply unit 40. According to this, the diffusion of the processing gas can be suppressed, and the utilization efficiency of the processing gas can be improved. Moreover, the loss of the processing gas by vacuum suction can be reduced.

  In the above-described piezoelectric substrate manufacturing apparatus, the cover 50 may have a gap 53 between the first electrode 10 of the second electrode 20 and the facing surface 20A facing the first electrode 10. According to this, the process gas can be supplied so as to replace the etched exhaust gas with the unreacted process gas. That is, the uniformity of the plasma concentration can be maintained, and the processing accuracy can be improved. Therefore, the manufacturing apparatus of a piezoelectric substrate can generate plasma efficiently.

  In the above-described piezoelectric substrate manufacturing apparatus, the second electrode 220 may have at least one through hole H. According to this, it is possible to improve the uniformity of the concentration of the processing gas between the first electrode and the second electrode.

  In the above-described piezoelectric substrate manufacturing apparatus, the distance between the first electrode 10 and the opposing surface facing the first electrode 10 of the measurement electrode is the opposing surface of the processing electrode facing the first electrode 10 and the first electrode 10. May be equal to the distance between According to this, even if the partial electrode to which a voltage is applied is switched, the inter-electrode distance between the plurality of partial electrodes and the first electrode can be kept constant.

  In the above-described piezoelectric substrate manufacturing apparatus, the distance between the first electrode 10 and the opposing surface facing the first electrode 10 of the measurement electrode is the opposing surface of the processing electrode facing the first electrode 10 and the first electrode 10. It may be different from the distance between According to this, when switching the operation from the measurement step to the processing step by optimizing the distance between the measurement electrode and the processing electrode to the inter-electrode distance obtained in the measurement step and the processing step, the second electrode There is no need to move along the method normal to the mounting surface of the first electrode. That is, the relative movement of the second electrode with respect to the first electrode can be reduced, and the processing accuracy can be improved.

  In the above-described piezoelectric substrate manufacturing apparatus, the area of the facing surface facing the first electrode 10 of the processing electrode may be larger than the area of the facing surface facing the first electrode 10 of the measurement electrode. According to this, it is possible to improve the measurement accuracy and to improve the processing efficiency.

  In the above-described piezoelectric substrate manufacturing apparatus, the area of the facing surface facing the first electrode 10 of the processing electrode may be smaller than the area of the facing surface facing the first electrode 10 of the measurement electrode. According to this, it is possible to improve the measurement efficiency and to improve the processing accuracy.

  In the above-described piezoelectric substrate manufacturing apparatus, the piezoelectric substrate may be disposed on the first electrode 10, and the plurality of partial electrodes 21 and 23 may be held and moved by the driving unit 30. According to this, it is possible to suppress the bending of the piezoelectric substrate and to improve the measurement accuracy.

  In the above-described piezoelectric substrate manufacturing apparatus, the piezoelectric substrate may be a quartz substrate.

  According to another aspect of the present invention, the first electrode 10 and the second electrode 20 opposed to each other with the piezoelectric substrate interposed therebetween, wherein the second electrode 20 is a measurement electrode and a processing electrode whose relative positions are fixed to each other. A voltage is applied between the first electrode 10 and the second electrode 20, the supply unit 40 for supplying the processing gas, and the first electrode 10 and the processing electrode, and the processing gas is plasmatized to form a piezoelectric substrate A measurement unit 63 for applying a voltage between the first electrode 10 and the measurement electrode to perform surface treatment, and measuring the thickness of the piezoelectric substrate based on the electrical characteristics, the first electrode 10 and the first And a control unit 61 for controlling the supply unit 40, the processing unit 65, the measurement unit 63, and the drive unit 30, the measurement electrode and the processing electrode The shape of the opposing surface facing the electrode 10 differs from each other Manufacturing apparatus 100 of the piezoelectric substrate is provided.

  According to the above aspect, since the partial electrodes of the second electrodes to which a voltage is applied can be designed to have an appropriate facing surface shape in each of the measurement step and the processing step, the processing accuracy can be improved. Can.

  According to another aspect of the present invention, the step of disposing a piezoelectric substrate 70 between the first electrode 10 and the second electrode 20 having a plurality of partial electrodes 21 and 23 whose relative positions are fixed to each other Electrical characteristics when the first electrical connection state of the plurality of partial electrodes 21 and 23 is selected to cause the second electrode 20 to function as a measurement electrode and a voltage is applied between the first electrode 10 and the measurement electrode Based on the step of measuring the thickness of the piezoelectric substrate 70, the step of calculating the processing amount based on the thickness, and selecting the second electrical connection state of the plurality of partial electrodes 21 and 23 as the second electrode And 20. Allowing 20 to function as a processing electrode, applying a voltage between the first electrode 10 and the processing electrode to plasmatize the processing gas 41, and surface-treating the piezoelectric substrate 70 based on the processing amount. A method of manufacturing a piezoelectric substrate is provided.

  According to the above aspect, at least one of the plurality of partial electrodes is selected as the measurement electrode so as to be a suitable opposed surface as the measurement electrode, and at least one of the plurality of partial electrodes is selected as the opposite surface suitable as the processing electrode. Can be selected as the processing electrode. That is, it is possible to adjust the processing accuracy and the processing efficiency independently of the adjustment of the measurement accuracy and the measurement efficiency.

  In the method of manufacturing a piezoelectric substrate described above, the shape of the facing surface facing the first electrode 10 of the measurement electrode may be different from the shape of the facing surface facing the first electrode 10 of the processing portion. According to this, among the second electrodes, the partial electrodes to which a voltage is applied can be selected to have an appropriate facing surface shape in each of the measurement step and the processing step, so that the processing accuracy can be improved. it can.

  In the method of manufacturing a piezoelectric substrate described above, at least one of the plurality of partial electrodes 21 and 23 may function as a processing electrode and may also function as a measurement electrode. According to this, since the opposing surface of the processing electrode and the opposing surface of the measurement electrode partially overlap, it is possible to improve the accuracy of positioning of the processing region with respect to the measurement region. Therefore, the processing accuracy can be improved.

  In the method of manufacturing a piezoelectric substrate described above, the plurality of partial electrodes 21 and 23 may be adjacent to each other while being electrically insulated from each other. According to this, it is possible to reduce the positioning error that occurs in the measurement process and the processing process.

  In the method of manufacturing a piezoelectric substrate described above, when the opposing surface 20A of the second electrode 20 facing the first electrode 10 is viewed in plan, the plurality of partial electrodes 21 and 23 at least includes the central electrode 21 and the central electrode 21. And a surrounding first peripheral electrode 23.

  In the method of manufacturing the piezoelectric substrate described above, when the opposing surface 320A of the second electrode 320 is viewed in plan, the plurality of partial electrodes 321, 323, and 325 further form the second peripheral electrode 325 surrounding the outside of the first peripheral electrode 323. You may have.

  In the method of manufacturing a piezoelectric substrate described above, when the facing surface of the second electrode 420 facing the first electrode is viewed in plan, the plurality of partial electrodes 421 and 42 are a plurality of radially divided from the center of the second electrode 420 The radial electrodes 427 may be provided.

  In the method of manufacturing the piezoelectric substrate described above, the facing surface 21A of the center electrode 21 facing the first electrode 10 is a combination of the facing surfaces 21A and 23A of the center electrode 21 and the first peripheral electrode 23 facing the first electrode 10 It may be similar to the shape. According to this, the center of the facing surface of the measurement electrode can be made to coincide with the center of the facing surface of the partial electrode. Therefore, the position of the processing electrode can be easily aligned with the processing amount distribution calculated from the thickness distribution, and the processing accuracy can be improved.

  In the method of manufacturing a piezoelectric substrate described above, the facing surface 21A of the center electrode 21 facing the first electrode 10 is circular, and the facing surface 23A of the first peripheral electrode 23 facing the first electrode 10 has an outer periphery It may be circular. According to this, the corner portion is not formed on the opposing surface as the measurement electrode or the processing electrode, and the generation of the electric field concentration can be suppressed. Therefore, deterioration in measurement accuracy and processing accuracy can be suppressed.

  In the method of manufacturing the piezoelectric substrate described above, the processing gas may be supplied to the internal space 51 of the cover 50 surrounding the second electrode 20 so that the tip is exposed. According to this, the diffusion of the processing gas can be suppressed, and the utilization efficiency of the processing gas can be improved. Moreover, the loss of the processing gas by vacuum suction can be reduced.

  In the method of manufacturing a piezoelectric substrate described above, the second electrode 220 may have at least one through hole H. According to this, it is possible to improve the uniformity of the concentration of the processing gas between the first electrode and the second electrode.

  In the method of manufacturing the piezoelectric substrate described above, the distance between the first electrode 10 and the opposite surface facing the first electrode 10 of the measurement electrode is the distance between the first electrode 10 and the opposite surface facing the first electrode 10 of the processing electrode. May be equal to the distance between According to this, even if the partial electrode to which a voltage is applied is switched, the inter-electrode distance between the plurality of partial electrodes and the first electrode can be kept constant.

  In the method of manufacturing the piezoelectric substrate described above, the distance between the first electrode 10 and the opposite surface facing the first electrode 10 of the measurement electrode is the distance between the first electrode 10 and the opposite surface facing the first electrode 10 of the processing electrode. It may be different from the distance between According to this, when switching the operation from the measurement step to the processing step by optimizing the distance between the measurement electrode and the processing electrode to the inter-electrode distance obtained in the measurement step and the processing step, the second electrode There is no need to move along the method normal to the mounting surface of the first electrode. That is, the relative movement of the second electrode with respect to the first electrode can be reduced, and the processing accuracy can be improved.

  In the method of manufacturing a piezoelectric substrate described above, the area of the facing surface facing the first electrode 10 of the processing electrode may be larger than the area of the facing surface facing the first electrode 10 of the measurement electrode. According to this, it is possible to improve the measurement accuracy and to improve the processing efficiency.

  In the method of manufacturing a piezoelectric substrate described above, the area of the facing surface facing the first electrode 10 of the processing electrode may be smaller than the area of the facing surface facing the first electrode 10 of the measurement electrode. According to this, it is possible to improve the measurement efficiency and to improve the processing accuracy.

  In the method of manufacturing a piezoelectric substrate described above, the piezoelectric substrate may be disposed on the first electrode 10, and the plurality of partial electrodes 21 and 23 may be held and moved by the drive unit 30. According to this, it is possible to suppress the bending of the piezoelectric substrate and to improve the measurement accuracy.

  In the method of manufacturing a piezoelectric substrate described above, the piezoelectric substrate may be a quartz substrate.

  As described above, according to one aspect of the present invention, it is possible to provide a piezoelectric substrate manufacturing apparatus and a piezoelectric substrate manufacturing method capable of adjusting processing accuracy and processing efficiency.

  The embodiments described above are for the purpose of facilitating the understanding of the present invention, and are not for the purpose of limiting and interpreting the present invention. The present invention can be modified / improved without departing from the gist thereof, and the present invention also includes the equivalents thereof. That is, those in which persons skilled in the art appropriately modify the design of each embodiment are also included in the scope of the present invention as long as they have the features of the present invention. For example, each element included in each embodiment and its arrangement, material, conditions, shape, size, and the like are not limited to those illustrated, and can be appropriately changed. Further, the elements included in each embodiment can be combined as much as technically possible, and combinations of these are included in the scope of the present invention as long as they include the features of the present invention.

DESCRIPTION OF SYMBOLS 100 ... Manufacturing apparatus of piezoelectric substrate 10 ... 1st electrode 20 ... 2nd electrode 21, 23 ... Partial electrode 30 ... Drive part 40 ... Supply part 50 ... Cover 61 control part 63 ... Measurement part 65 ... Processing part 67 ... Switch part

Claims (37)

A first electrode and a second electrode facing each other across the piezoelectric substrate, wherein the second electrode has a plurality of partial electrodes whose relative positions are fixed to each other;
A switch unit which selects an electrical connection state of the plurality of partial electrodes and which functions as a processing electrode or a measurement electrode;
A supply unit for supplying a processing gas;
A processing unit that applies a voltage between the first electrode and the processing electrode, converts the processing gas into plasma, and performs surface processing on the piezoelectric substrate;
A measurement unit that applies a voltage between the first electrode and the measurement electrode and measures the thickness of the piezoelectric substrate based on electrical characteristics;
A driving unit configured to change a relative position of the first electrode and the second electrode;
A control unit that controls the switch unit, the supply unit, the processing unit, the measurement unit, and the drive unit;
The manufacturing apparatus of the piezoelectric substrate provided with. The shape of the facing surface of the measurement electrode facing the first electrode is different from the shape of the facing surface of the processing portion facing the first electrode.
An apparatus for manufacturing a piezoelectric substrate according to claim 1. At least one of the plurality of partial electrodes functions as the processing electrode and also functions as the measurement electrode.
The manufacturing apparatus of the piezoelectric substrate of Claim 1 or 2. The plurality of partial electrodes are adjacent to each other while being electrically isolated from each other.
The manufacturing apparatus of the piezoelectric substrate of any one of Claim 1 to 3. The plurality of partial electrodes have at least a center electrode and a first peripheral electrode surrounding the center electrode in plan view of a facing surface of the second electrode facing the first electrode.
The manufacturing apparatus of the piezoelectric substrate of Claim 4. The plurality of partial electrodes further include a second peripheral electrode surrounding an outer side of the first peripheral electrode when the opposing surface of the second electrode is viewed in plan.
The manufacturing apparatus of the piezoelectric substrate of Claim 5. When the opposing surface of the second electrode facing the first electrode is viewed in plan, the plurality of partial electrodes have a plurality of radial electrodes radially divided from the center of the second electrode.
The manufacturing apparatus of the piezoelectric substrate of any one of Claims 4-6. The facing surface of the center electrode facing the first electrode has a similar shape of a shape combining the facing surfaces of the center electrode and the first peripheral electrode facing the first electrode.
The manufacturing apparatus of the piezoelectric substrate of Claim 5 or 6. An opposing surface of the center electrode facing the first electrode is circular,
An opposing surface of the first peripheral electrode facing the first electrode has a circular outer periphery,
The manufacturing apparatus of the piezoelectric substrate of Claim 8. And a cover having an inner space surrounding the second electrode such that the tip is exposed and to which the processing gas is supplied from the supply unit.
The manufacturing apparatus of the piezoelectric substrate of any one of Claims 1-9. The cover has a gap between an opposing surface of the second electrode facing the first electrode.
The manufacturing apparatus of the piezoelectric substrate of Claim 10. The second electrode has at least one through hole,
The manufacturing apparatus of the piezoelectric substrate of Claim 10 or 11. The distance between the first electrode and the facing surface of the measurement electrode facing the first electrode is equal to the distance between the facing surface of the processing electrode facing the first electrode and the first electrode ,
The manufacturing apparatus of the piezoelectric substrate of any one of Claims 1-12. The distance between the first electrode and the facing surface facing the first electrode of the measuring electrode is the distance between the facing surface facing the first electrode of the processing electrode and the first electrode Different
The manufacturing apparatus of the piezoelectric substrate of any one of Claims 1-12. The area of the facing surface of the processing electrode facing the first electrode is larger than the area of the facing surface of the measurement electrode facing the first electrode.
The manufacturing apparatus of the piezoelectric substrate of any one of Claims 1-14. The area of the facing surface of the processing electrode facing the first electrode is smaller than the area of the facing surface of the measurement electrode facing the first electrode.
The manufacturing apparatus of the piezoelectric substrate of any one of Claims 1-14. The piezoelectric substrate is disposed on the first electrode,
The plurality of partial electrodes are held and moved by the drive unit.
The manufacturing apparatus of the piezoelectric substrate of any one of Claims 1-16. The piezoelectric substrate is a quartz substrate;
The manufacturing apparatus of the piezoelectric substrate of any one of Claims 1-17. A first electrode and a second electrode facing each other across the piezoelectric substrate, wherein the second electrode has a measurement electrode and a processing electrode whose relative positions are fixed to each other;
A supply unit for supplying a processing gas;
A processing unit that applies a voltage between the first electrode and the processing electrode, converts the processing gas into a plasma, and performs surface processing of the piezoelectric substrate;
A measurement unit that applies a voltage between the first electrode and the measurement electrode and measures the thickness of the piezoelectric substrate based on electrical characteristics;
A driving unit configured to change a relative position of the first electrode and the second electrode;
A control unit that controls the supply unit, the processing unit, the measurement unit, and the drive unit;
Equipped with
The manufacturing apparatus of the piezoelectric substrate from which the shape of the opposing surface which the said measurement electrode and the said process electrode oppose the said 1st electrode mutually differ. Disposing a piezoelectric substrate between the first electrode and the second electrode having a plurality of partial electrodes whose relative positions are fixed relative to each other;
The first electrical connection state of the plurality of partial electrodes is selected to cause the second electrode to function as a measurement electrode, and based on the electrical characteristics when a voltage is applied between the first electrode and the measurement electrode Measuring the thickness of the piezoelectric substrate;
Calculating a processing amount based on the thickness;
The second electrical connection state of the plurality of partial electrodes is selected to cause the second electrode to function as a processing electrode, and a voltage is applied between the first electrode and the processing electrode to plasmatize the processing gas Performing a surface treatment of the piezoelectric substrate on the basis of the processing amount;
The manufacturing method of the piezoelectric substrate which has. The shape of the facing surface of the measurement electrode facing the first electrode is different from the shape of the facing surface of the processing electrode facing the first electrode.
A method of manufacturing a piezoelectric substrate according to claim 20. At least one of the plurality of partial electrodes functions as the processing electrode and also functions as the measurement electrode.
A method of manufacturing a piezoelectric substrate according to claim 20 or 21. The plurality of partial electrodes are adjacent to each other while being electrically isolated from each other.
A method of manufacturing a piezoelectric substrate according to any one of claims 20 to 22. The plurality of partial electrodes have at least a center electrode and a first peripheral electrode surrounding the center electrode in plan view of a facing surface of the second electrode facing the first electrode.
A method of manufacturing a piezoelectric substrate according to claim 23. The plurality of partial electrodes further include a second peripheral electrode surrounding an outer side of the first peripheral electrode when the opposing surface of the second electrode is viewed in plan.
A method of manufacturing a piezoelectric substrate according to claim 24. When the opposing surface of the second electrode facing the first electrode is viewed in plan, the plurality of partial electrodes have a plurality of radial electrodes radially divided from the center of the second electrode.
A method of manufacturing a piezoelectric substrate according to any one of claims 23 to 25. The facing surface of the center electrode facing the first electrode has a similar shape of a shape combining the facing surfaces of the center electrode and the first peripheral electrode facing the first electrode.
A method of manufacturing a piezoelectric substrate according to claim 24 or 25. An opposing surface of the center electrode facing the first electrode is circular,
An opposing surface of the first peripheral electrode facing the first electrode has a circular outer periphery,
A method of manufacturing a piezoelectric substrate according to claim 27. Supplying the processing gas to an internal space of a cover surrounding the second electrode so that the tip is exposed;
A method of manufacturing a piezoelectric substrate according to any one of claims 20 to 28. The cover has a gap between an opposing surface of the second electrode facing the first electrode.
A method of manufacturing a piezoelectric substrate according to claim 29. The second electrode has at least one through hole,
A method of manufacturing a piezoelectric substrate according to claim 29 or 30. The distance between the first electrode and the facing surface of the measurement electrode facing the first electrode is equal to the distance between the facing surface of the processing electrode facing the first electrode and the first electrode ,
A method of manufacturing a piezoelectric substrate according to any one of claims 20 to 31. The distance between the first electrode and the facing surface facing the first electrode of the measuring electrode is the distance between the facing surface facing the first electrode of the processing electrode and the first electrode Different
A method of manufacturing a piezoelectric substrate according to any one of claims 20 to 31. The area of the facing surface of the processing electrode facing the first electrode is larger than the area of the facing surface of the measurement electrode facing the first electrode.
A method of manufacturing a piezoelectric substrate according to any one of claims 20 to 33. The area of the facing surface of the processing electrode facing the first electrode is smaller than the area of the facing surface of the measurement electrode facing the first electrode.
A method of manufacturing a piezoelectric substrate according to any one of claims 20 to 33. Disposing the piezoelectric substrate on the first electrode;
The plurality of partial electrodes are held and moved by a drive unit,
A method of manufacturing a piezoelectric substrate according to any one of claims 20 to 35. The piezoelectric substrate is a quartz substrate;
A method of manufacturing a piezoelectric substrate according to any one of claims 20 to 36.