JP2018132484A - Manufacturing method of semiconductor physical quantity sensor device and testing method of semiconductor physical quantity sensor device - Google Patents

Abstract

A method of manufacturing a semiconductor physical quantity sensor device and a method of testing a semiconductor physical quantity sensor device capable of suppressing changes in physical quantity output characteristics from an initial state are provided.
A sensor unit 10 of a semiconductor physical quantity sensor device is fixed to a bottom surface of a resin case 1 via an adhesive layer 13 and is covered with a gel-like protective material layer 5. Free oil In manufacturing this semiconductor physical quantity sensor device, it is formed using the gel-like protective material layer 5 and the adhesive layer 13 having a small difference in free oil concentration during the assembly process. Alternatively, after the assembly process, before adjusting the output characteristics of the semiconductor pressure sensor device, the semiconductor pressure sensor device is allowed to stand in an atmosphere at room temperature or a temperature of 130 ° C. or higher, and between the gel-like protective material layer 5 and the adhesive layer 13. Free oil is diffused to reduce the difference in free oil concentration between the gel protective material layer 5 and the adhesive layer 13.
[Selection] Figure 8

Description

  The present invention relates to a method for manufacturing a semiconductor physical quantity sensor device and a method for testing a semiconductor physical quantity sensor device.

  Many semiconductor physical quantity sensor devices are used in automobiles and industrial equipment. For example, in a semiconductor pressure sensor device for an automobile, a semiconductor pressure sensor chip using a piezoresistance effect is generally used as a sensor element. The semiconductor pressure sensor device has a configuration in which a plurality of semiconductor strain gauges are formed on a diaphragm made of a material having a piezoresistance effect, such as single crystal silicon (Si), and these semiconductor strain gauges are bridge-connected. In this semiconductor pressure sensor device, the gauge resistance of the semiconductor strain gauge changes due to the deformation of the diaphragm according to the pressure change, and the pressure is detected by taking out the change amount as a voltage signal from the bridge circuit.

  The semiconductor pressure sensor device has a configuration in which a semiconductor pressure sensor unit is housed in a concave sensor mounting portion formed in a housing body. The semiconductor pressure sensor unit has a structure in which a semiconductor pressure sensor chip is bonded to one surface of a glass pedestal, and the other surface of the glass pedestal is bonded to the bottom surface of the sensor mounting portion of the storage container body, thereby the sensor mounting portion. It is stored in. Further, the semiconductor pressure sensor unit is covered with a gel-like protective material filled in the inside of the storage container body, and is protected from deposits such as contaminants contained in the pressure medium to be measured (for example, Patent Document 1 below). (See paragraphs 0003-0005, FIG. 5).

  Further, as another semiconductor pressure sensor device, the second oil contacting the first protective material is more than the amount of free oil contained in the first protective material contacting at least the pressure receiving surface of the sensor chip among the plurality of protective materials. A device has been proposed in which the amount of free oil contained in the protective material is increased (see, for example, Patent Document 2 (paragraph 0008,00045) below). In the following Patent Document 2, a concentration gradient is provided in the free oil for preventing hardening contained in the first and second protective material layers between the first and second protective material layers, and the second protective material layer is formed of the first protective material layer. By using the oil supply source, the amount of oil mixed in the first protective material layer is prevented from decreasing.

  Also, as another semiconductor pressure sensor device, at least the upper part of the terminal is covered with a fluorine adhesive, and the fluorine adhesive and the sensor chip and the bonding wire are buried inside the container body so that all of the fluorine adhesive, the sensor chip and the bonding wire are buried. An apparatus filled with the same kind of fluorine-based gel has been proposed (see, for example, Patent Document 3 below). In Patent Document 3 below, the upper part of the terminal is covered with a fluorine-based adhesive so that it is less susceptible to adverse effects of atmospheres such as gasoline vapor, water vapor, and acidic exhaust gas. In addition, even when placed under conditions of temperature change or pressure change, the endurance life is improved by preventing generation of bubbles and cracks in the sealant.

Japanese Patent No. 5884921 Japanese Patent No. 4893529 JP 2001-099737 A

  In the conventional semiconductor pressure sensor device, an adhesive layer that bonds the semiconductor pressure sensor unit and the storage container main body may be in contact with a gel-like protective material layer that protects the semiconductor pressure sensor unit. In this case, free oil (non-functional oil) contained in the gel-like protective material layer may diffuse into the adhesive layer, and the adhesive layer may swell by absorbing the diffused free oil.

  It is assumed that the physical properties such as the elastic modulus, penetration, and hardness of the adhesive layer and the gel-like protective material layer change with time due to the diffusion of the free oil. As a result, the stress balance between the peripheral members of the semiconductor pressure sensor unit changes from the initial state, which may adversely affect the pressure detection accuracy of the semiconductor pressure sensor device. This problem also occurs in other semiconductor physical quantity sensor devices having the same configuration as the semiconductor pressure sensor device.

  The present invention provides a method for manufacturing a semiconductor physical quantity sensor device and a method for testing a semiconductor physical quantity sensor device that can suppress fluctuations in physical quantity output characteristics from the initial state in order to eliminate the above-described problems caused by the prior art. For the purpose.

  In order to solve the above-described problems and achieve the object of the present invention, a method for manufacturing a semiconductor physical quantity sensor device according to the present invention has the following characteristics. First, a first step of storing a sensor unit having a sensor chip that converts a physical quantity into an electrical signal by joining the inside of the resin case via an adhesive layer containing free oil is performed. Next, a protective material layer made of the same type of gel material as the material constituting the adhesive layer and containing free oil is filled in the resin case, and the sensor unit is covered with the protective material layer. Two steps are performed. Next, after the second step, a third step of adjusting the output characteristics of the sensor chip is performed.

  In the method of manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, in the second step, the protective material layer having the same free oil concentration as the adhesive layer is filled in the resin case. It is characterized by that.

  According to the method of manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, the protection is performed between the adhesive layer and the protective material layer after the second step and before the third step. A fourth step of diffusing free oil from the material layer to the adhesive layer to make a difference in free oil concentration between the adhesive layer and the protective material layer smaller than that after the end of the second step; It is characterized by that.

  In the method for manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, in the fourth step, the output fluctuation amount of the semiconductor physical quantity sensor device obtained in advance is 50 from the time after the end of the second step. It is characterized by being left for a predetermined time at a predetermined temperature that is increased by at least%.

  Further, in the method of manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, in the fourth step, the output fluctuation amount of the semiconductor physical quantity sensor device obtained in advance is 90 from the time after the end of the second step. It is characterized by being left for a predetermined time at a predetermined temperature that is increased by at least%.

  In the method for manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, in the fourth step, the weight change rate of the adhesive layer is increased from the time after the end of the second step. The adhesive layer and the protective material layer have the same free oil concentration.

  In the method for manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, in the fourth step, the sensor unit housed in the resin case and covered with the protective material layer is placed in an atmosphere at a predetermined temperature. It is characterized by being left for a predetermined time.

  In the method of manufacturing a semiconductor physical quantity sensor device according to the present invention, the predetermined temperature is room temperature in the above-described invention.

  In the method of manufacturing a semiconductor physical quantity sensor device according to the present invention, the predetermined temperature is 130 ° C. or higher in the above-described invention.

  In the method for manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, the predetermined temperature is an atmosphere equal to or higher than an environment temperature receiving the physical quantity.

In the method for manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, in the fourth step, first, the weight change rate of the adhesive layer with respect to the sensor unit leaving time is set in advance at a predetermined temperature. The 1st acquisition process to acquire is performed. Next, based on the result of the first acquisition step, the weight change rate when the weight change of the adhesive layer is saturated is defined as a saturation value M _S, and the output fluctuation amount of the sensor chip is the second step. The second acquisition step of acquiring the weight change rate of the adhesive layer from the time after the end of the process until Y% is obtained at a ratio (= M _S × Z, Z <1) based on the saturation value M _S I do. Next, in the fourth step, the leaving time obtained in the first acquisition step is set as a predetermined time based on the result of the second acquisition step.

In the method for manufacturing a semiconductor physical quantity sensor device according to the present invention, in the above-described invention, in the second acquisition step, the weight change rate of the adhesive layer after heating at 150 ° C. for 500 hours is set as the saturation value M _S. It is characterized by prescribing.

In order to solve the above-described problems and achieve the object of the present invention, a test method for a semiconductor physical quantity sensor device according to the present invention is a test method for a semiconductor physical quantity sensor device including a sensor unit, a resin case, and a protective material layer. And having the following characteristics. The sensor unit includes a sensor chip that converts a physical quantity into an electrical signal. The resin case accommodates and stores the sensor unit inside through an adhesive layer. The adhesive layer includes free oil. The protective material layer is filled in the resin case and covers the sensor unit. The protective material layer is made of the same type of gel material as the material constituting the adhesive layer, and contains free oil at a concentration different from that of the adhesive layer. The protective material layer is in contact with the adhesive layer. First, the sensor unit housed in the resin case and covered with the protective material layer is allowed to stand for a predetermined time in an atmosphere of a predetermined temperature, and the adhesive layer is placed between the adhesive layer and the protective material layer. A first acquisition step is performed in which free oil is diffused from the protective material layer and the weight change rate of the adhesive layer with respect to the standing time is acquired. Next, based on the result of the first acquisition step, the weight change rate when the weight change of the adhesive layer is saturated is defined as a saturation value M _S, and the output fluctuation amount of the sensor chip is Y from the initial state. The second acquisition step of acquiring the weight change rate of the adhesive layer up to% by the ratio (= M _S × Z, Z <1) based on the saturation value M _S is performed.

Further, in the test method of the semiconductor physical quantity sensor device according to the present invention, in the above-described invention, in the second acquisition step, the weight change rate of the adhesive layer after heating at 150 ° C. for 500 hours is set as the saturation value M _S. It is characterized by prescribing.

  According to the above-described invention, it is possible to reduce the diffusion amount of free oil per unit time between the adhesive layer and the protective material layer. For this reason, it can suppress that physical properties, such as an elasticity modulus, penetration, and hardness of an adhesive bond layer and a protective material layer, change with time by diffusion of free oil.

  According to the method for manufacturing a semiconductor physical quantity sensor device and the method for testing a semiconductor physical quantity sensor device according to the present invention, the physical quantity output characteristics can be prevented from changing from the initial state, and the physical quantity detection accuracy can be improved. There is an effect.

It is sectional drawing which shows the structure of a general semiconductor physical quantity sensor apparatus. FIG. 2 is a plan view showing a layout of the semiconductor physical quantity sensor device of FIG. 1 as viewed from above. It is a flowchart which shows the outline | summary of the manufacturing method of the semiconductor physical quantity sensor apparatus concerning embodiment. 2 is a cross-sectional view schematically showing a test piece used for verification of Example 1. FIG. It is a characteristic view which shows the time dependence of the weight change rate of the adhesive bond layer of Example 1. It is a characteristic view which shows the free oil compounding ratio dependence of the weight change rate of the adhesive bond layer of Example 1. It is a characteristic view which shows the temperature dependence of the weight change rate of the adhesive bond layer of Example 1. It is a characteristic view which shows the temperature dependence of the weight change rate of the adhesive bond layer of Example 1. It is a characteristic view which shows the time dependence of the output fluctuation amount of the semiconductor physical quantity sensor apparatus of Example 2. It is a characteristic view which shows the time dependence of the weight change rate of the adhesive bond layer of Example 3. FIG. 10 is a characteristic diagram illustrating an enlarged characteristic at an early stage of the elapsed time in FIG. 9.

  Exemplary embodiments of a method for manufacturing a semiconductor physical quantity sensor device and a method for testing a semiconductor physical quantity sensor device according to the present invention will be described below in detail with reference to the accompanying drawings. Note that, in the following description of the embodiments and the accompanying drawings, the same reference numerals are given to the same components, and duplicate descriptions are omitted.

(Embodiment)
A configuration of the semiconductor physical quantity sensor device according to the embodiment will be described. FIG. 1 is a cross-sectional view showing the structure of a general semiconductor physical quantity sensor device. FIG. 2 is a plan view showing a layout of the semiconductor physical quantity sensor device of FIG. 1 as viewed from above. The semiconductor physical quantity sensor device shown in FIG. 1 is generally provided with a resin case 1, a sensor mounting portion 2, a lead terminal (lead frame) 3 for leading out, a bonding wire 4, a gel-like protective material layer 5, and a sensor unit 10. For example, a semiconductor pressure sensor device having a simple structure. The sensor unit 10 includes a semiconductor sensor chip 11 and a pedestal member 12.

  The resin case 1 is a storage container main body for storing the sensor unit 10 and has a concave sensor mounting portion 2 for storing the sensor unit 10 therein. A plurality of lead terminals 3 are integrally insert-molded in the resin case 1. One end of the lead terminal 3 is exposed inside the resin case 1, and the other end is exposed outside the resin case 1. In the sensor unit 10, the semiconductor sensor chip 11 is bonded to one surface of the pedestal member 12, and the other surface of the pedestal member 12 is bonded to the bottom surface of the sensor mounting portion 2 via the adhesive layer 13. Has been.

  The semiconductor sensor chip 11 includes a pressure-sensitive part (diaphragm) 11a that is bent by pressure, a resistance bridge (not shown), and a circuit part (not shown) that amplifies and corrects the output of the resistance bridge. The diaphragm 11a is a portion that is thinned by a concave portion 11b provided, for example, at the center of the back surface of the semiconductor sensor chip 11. The resistance bridge is a bridge circuit in which a plurality of semiconductor strain gauges formed of a material having a piezoresistance effect (for example, a diffusion region formed in the diaphragm 11a by ion implantation or the like) is bridge-connected. The circuit unit may not be integrated on the semiconductor sensor chip 11. In this case, it is formed on another semiconductor chip (not shown), and is electrically connected to the semiconductor sensor chip 11 by a plurality of lead terminals 3.

  The semiconductor sensor chip 11 is, for example, electrostatically bonded (anodic bonded) to one surface of the pedestal member 12 so as to block the recess 11b formed in the portion where the diaphragm 11a is disposed with the pedestal member 12. The base member 12 is made of heat resistant glass, for example. The other surface of the pedestal member 12 is die-bonded to the bottom surface of the sensor mounting portion 2 of the resin case 1 via an adhesive layer 13. The adhesive layer 13 is made of a polymer material containing free oil. Free oil is an additive for adjusting physical properties such as elastic modulus, penetration and hardness. For example, the adhesive layer 13 may be a fluorine-based adhesive having high chemical resistance.

  The electrode pads 6 (see FIG. 2) on the front surface of the semiconductor sensor chip 11 are electrically connected to the lead terminals 3 via the bonding wires 4. The semiconductor sensor chip 11, the portion of the lead terminal 3 exposed inside the resin case 1, and the bonding wire 4 are embedded in the gel-like protective material layer 5 and are included in the measured pressure medium by the gel-like protective material layer 5. It is protected from contamination. The gel-like protective material layer 5 is filled in the resin case 1 so as to embed the concave sensor mounting portion 2 and is in contact with the side surface 13 a of the adhesive layer 13. The gel protective material layer 5 is a pressure medium that transmits pressure to the sensor unit 10.

  The gel-like protective material layer 5 is made of a gel containing free oil. In the present invention, the gel-like protective material layer 5 is made of the same material as the adhesive layer 13. In the present invention, the material of the same system is a material having the same main chain of constituent components. In addition, the difference in free oil concentration between the gel protective material layer 5 and the adhesive layer 13 is set as small as possible before adjusting the output characteristics of the semiconductor pressure sensor device. Preferably, the free oil concentration of the gel-like protective material layer 5 and the free oil concentration of the adhesive layer 13 are preferably set in advance to the same level before adjusting the output characteristics of the semiconductor pressure sensor device. For example, the gel-like protective material layer 5 and the adhesive layer 13 having a small or substantially the same difference in free oil concentration may be formed during the assembly process. As the difference in free oil concentration between the gel-like protective material layer 5 and the adhesive layer 13 is smaller, the amount of diffusion of free oil per unit time between the gel-like protective material layer 5 and the adhesive layer 13 is reduced. It is possible to suppress changes with time in the output characteristics of the pressure sensor device.

  By suppressing the diffusion of free oil between the gel-like protective material layer 5 and the adhesive layer 13, it is possible to suppress the diffused free oil from being absorbed and the adhesive layer 13 from swelling. For this reason, it can prevent that the physical property of the adhesive bond layer 13 and the gel-like protective material layer 5 changes with time by this swelling phenomenon, and can improve the pressure detection precision of a semiconductor pressure sensor apparatus. In order to reduce the difference in the free oil concentration between the gel-like protective material layer 5 and the adhesive layer 13, for example, an adhesive containing free oil so as to have a free oil concentration similar to that of the gel-like protective material layer 5 is used. The sensor unit 10 and the resin case 1 are bonded together.

  Furthermore, after the assembly process of the semiconductor pressure sensor device using the gel-like protective material and the adhesive having different free oil concentrations and before the adjustment of the output characteristics of the semiconductor pressure sensor device, the gel-like protective material layer 5 and the adhesive layer 13 The free oil concentration difference between the gel-like protective material layer 5 and the adhesive layer 13 may be reduced by causing the free oil diffusion to proceed in advance. This diffusion phenomenon preferably proceeds so that the weight change of the adhesive layer 13 and the gel protective material layer 5 is saturated (the weight increase rate of the swollen member is 100%). If the change has progressed even a little from the initial state (weight change rate = 0%) before adjusting the output characteristics of the semiconductor pressure sensor device, the semiconductor pressure sensor is more than the conventional structure in which the adhesive layer 13 does not contain free oil. Variations in the output characteristics of the device can be suppressed.

  In this diffusion phenomenon, the adhesive layer 13 having a relatively low free oil concentration out of the gel protective material layer 5 and the adhesive layer 13 absorbs the free oil diffused from the gel protective material layer 5 and swells. . For this reason, the weight of the adhesive layer 13 having a relatively low free oil concentration rapidly increases and then gradually increases to saturate and hardly change. The free oil in the gel protective material layer 5 is diffused into the adhesive layer 13. For this reason, after the weight of the gel-like protective material layer 5 decreases rapidly, it gradually decreases and saturates and hardly changes.

  Thus, a change in weight due to the diffusion of free oil occurs between the gel-like protective material layer 5 and the adhesive layer 13. For this reason, before adjusting the output characteristics of the semiconductor pressure sensor device, the gel protective material layer 5 and the adhesive layer 13 are passed through a period in which the weight change of the gel protective material layer 5 and the adhesive layer 13 proceeds rapidly. It is preferable to reduce the difference in the free oil concentration. For example, the weight increase rate of the adhesive layer 13 may be set to at least 50% or more, preferably 90% or more from the initial state (= 0%) before adjusting the output characteristics of the semiconductor pressure sensor device. .

  As shown in FIG. 2, the sensor unit 10 and the adhesive layer 13 have, for example, a substantially rectangular planar shape having substantially the same dimensions. The sensor mounting portion 2 of the resin case 1 has, for example, a substantially rectangular planar shape that is slightly larger than the sensor unit 10 to the extent that the sensor unit 10 can be accommodated. The gel-like protective material layer 5 (hatched portion) covers the front surface of the semiconductor sensor chip 11 and is filled between the side wall 2a of the sensor mounting portion 2 and the side surface 10a of the sensor unit 10. The side surface 10 a and the side surface 13 a of the adhesive layer 13 are in contact with each other. That is, the gel-like protective material layer 5 is in contact with the side surface 13a corresponding to, for example, four sides of the substantially rectangular flat-plate adhesive layer 13.

  In the semiconductor pressure sensor device shown in FIG. 1, the space portion on the gel protective material layer 5 side of the resin case 1 is a pressure detection unit, and the pressure medium to be measured is in contact with the surface of the gel protective material layer 5. A pressure is applied to the semiconductor sensor chip 11. Due to the deformation of the diaphragm 11a according to the pressure change, the semiconductor strain gauge is deformed to change the gauge resistance of the semiconductor strain gauge, and the pressure is detected by taking out the change amount of the gauge resistance as a voltage signal from the bridge circuit. As described above, since the difference in free oil concentration between the gel protective material layer 5 and the adhesive layer 13 is adjusted in advance before adjusting the output characteristics of the semiconductor pressure sensor device, the gel protective material layer 5 and the adhesive layer Even if 13 is in contact, the output characteristic variation of the semiconductor pressure sensor device after the output characteristic adjustment is small.

  Next, a method for manufacturing the semiconductor physical quantity sensor device according to the embodiment will be described. FIG. 3 is a flowchart illustrating an outline of a method for manufacturing the semiconductor physical quantity sensor device according to the embodiment. First, an integrated circuit (IC: integrated circuit) such as a resistance bridge and a circuit unit that amplifies and corrects the output of the resistance bridge is provided in each region to be an individual semiconductor sensor chip 11 on the front surface of a semiconductor wafer (not shown). (Integrated Circuit) is formed (step S1). Next, the back surface of the semiconductor wafer is polished (step S2).

  Next, a recess 11b having a predetermined depth from the back surface of the wafer is formed in each region to be the individual semiconductor sensor chip 11 on the back surface of the semiconductor wafer, so that a part of each region to be the semiconductor sensor chip 11 is thinned. To form the diaphragm 11a (step S3). Next, for example, a glass wafer (not shown) to be the pedestal member 12 is disposed so as to block the recess 11b of the semiconductor wafer, and the back surface of the semiconductor wafer is bonded (electrostatic bonding) to one surface of the glass wafer ( Step S4).

  Next, a general electrical property test is performed on the semiconductor wafer electrostatically bonded to the glass wafer (step S5). Next, the semiconductor wafer is diced (cut) together with the glass wafer and separated into individual semiconductor sensor chips 11 (step S6). The sensor unit 10 in which the semiconductor sensor chip 11 is electrostatically bonded to one surface of the pedestal member 12 is manufactured by the processing from steps S1 to S6. Next, an appearance inspection of the sensor unit 10 is performed (step S7).

  Next, the other surface of the base member 12 of the sensor unit 10 is die-bonded to the bottom surface of the sensor mounting portion 2 of the resin case 1 with the adhesive layer 13 (step S8). Next, the electrode pads 6 on the front surface of the semiconductor sensor chip 11 and the lead terminals 3 formed integrally with the resin case 1 are electrically connected by the bonding wires 4 by wire bonding (step S9). The processing in step S8 and the processing in step S9 can be performed continuously by automatic conveyance.

  Next, a gel-like protective material is applied to the inside of the resin case 1, and the sensor unit 10, the lead terminal 3, and the bonding wire 4 are embedded in the gel-like protective material (step S10). Next, the gel-like protective material layer 5 is formed by curing the gel-like protective material by heat treatment (cure) (step S11). With the processing up to step S11, the assembly process of the semiconductor pressure sensor device according to the embodiment is completed. Next, a burn-in test is performed in which an initial defective chip is selected and removed by applying temperature and voltage loads to the sensor unit 10 (step S12).

  Next, when the free oil concentration of the gel protective material layer 5 and the free oil concentration of the adhesive layer 13 are different, diffusion of free oil generated between the gel protective material layer 5 and the adhesive layer 13 is advanced. Thus, the difference in free oil concentration between the gel protective material layer 5 and the adhesive layer 13 is reduced (step S13). In the process of step S13, for example, the sensor unit 10 is stored for a predetermined time in an atmosphere of room temperature (for example, about 25 ° C.) or high temperature (for example, the temperature of the environment around the semiconductor pressure sensor device during actual use). Free oil is allowed to diffuse between the gel-like protective material layer 5 and the adhesive layer 13.

  The temperature of the environment around the semiconductor pressure sensor device in actual use is, for example, about 130 ° C. to 150 ° C. which is the temperature of the exhaust gas of the automobile when the semiconductor pressure sensor device is used as an exhaust system part of an automobile engine. May be. A method of determining a thermal history condition given to the semiconductor physical quantity sensor device when the free oil concentration of the gel protective material layer 5 and the free oil concentration of the adhesive layer 13 are different, or the gel protective material layer 5 and the adhesive layer The free oil blending ratio with 13 will be described later.

  The process in step S13 may be performed after the process in step S11 and before the process in step S12. Further, the process of step S13 may be performed simultaneously with the process of step S12. If the free oil concentration of the gel-like protective material layer 5 and the free oil concentration of the adhesive layer 13 are almost the same, the process of step S13 is omitted and the process proceeds to step S14.

  Next, after adjusting the trimming data to obtain a predetermined output characteristic of the semiconductor pressure sensor device, the trimming data is written in a memory such as an EPROM (Erasable Programmable Read Only Memory) (step S14). In the process of step S14, the output characteristics are adjusted based on the output fluctuation amount (weight change rate of the gel-like protective material layer 5 and the adhesive layer 13) of the semiconductor pressure sensor device after the process of step S13 as a reference (= 0). be able to.

  Step S12 can also be performed after step S14. In this case, step S13 is performed after step S11 is completed and before step S14 is performed. Therefore, after step S11 is completed, it is necessary to leave at a predetermined temperature for a predetermined time before performing step S14.

  Next, an output characteristic test (temperature characteristic test) with respect to a temperature change around the semiconductor pressure sensor device is performed (step S15). The process of step S14 and the process of step S15 can be continuously performed by automatic conveyance. Next, an output characteristic inspection (atmospheric pressure output inspection) for atmospheric pressure fluctuation around the semiconductor pressure sensor device is performed (step S16). Next, a final appearance inspection of the semiconductor pressure sensor device is performed (step S17), thereby completing the semiconductor pressure sensor device.

Example 1
Next, the time dependency and temperature dependency of the weight change rate of the gel protective material layer 5 and the adhesive layer 13 were verified. 4 is a cross-sectional view schematically showing a test piece used for verification of Example 1. FIG. As shown in FIG. 4, for the test piece 20 in a state where the cured gel-like protective material sheet 22 is brought into contact so as to cover both surfaces (both flat plate surfaces) of the cured adhesive piece 21, the adhesive piece 21. The change in weight was verified. The adhesive piece 21 has a thin plate shape and a substantially rectangular planar shape. The gel protective material sheet 22 is a sheet and has a substantially rectangular planar shape. The adhesive piece 21 and the gel-like protective material sheet 22 correspond to the adhesive layer 13 and the gel-like protective material layer 5 shown in FIG. The test piece 20 corresponds to a state in which the side surfaces corresponding to two opposing sides of the adhesive layer 13 in FIG. 1 are covered with the gel-like protective material layer 5.

  First, the materials of the adhesive piece 21 and the gel-like protective material sheet 22 were verified. About the test piece 20, when the adhesive piece 21 and the gel-like protective material sheet 22 are comprised with the material of the same system | strain, the weight change rate of the adhesive piece 21 is shown in FIG. 5 (gel-adhesive: same kind ). The test piece 20 was a fluorine-based compound (synthetic polymer compound) having a perfluoropolyether structure in the main chain in both the adhesive piece 21 and the gel-like protective material sheet 22. As the fluorine-based compound, for example, SIFEL (registered trademark) manufactured by Shin-Etsu Chemical Co., Ltd. can be used. For comparison, the weight change rate of the adhesive piece 21 when the adhesive piece 21 and the gel-like protective material sheet 22 are made of different materials is also shown for the test piece 20 (gel-adhesive) : Different types). In this test piece 20, the adhesive piece 21 was made of a fluorine-based adhesive, and the gel-like protective material sheet 22 was made of silicone. When the weight of the gel protective material layer 5 is sufficiently larger than the weight of the adhesive layer 13 in the semiconductor substance sensor device, the gel protective material layer 5 is an infinite supply source of free oil to the adhesive layer 13. Conceivable. In order to realize an infinite supply source also in the test piece 20, it is desirable that the thickness of the gel-like protective material sheet 22 is 10 times or more that of the adhesive piece 21. Further, a plurality of test pieces 20 are prepared when the thickness of the adhesive piece 21 is changed, and the predetermined weight at each adhesive piece thickness is determined from the dependency of the weight change rate of the adhesive piece 21 on the thickness of the adhesive piece. Get the time to reach the rate of change. Using the acquired data, in the planar shape of the adhesive layer 13 of the semiconductor physical quantity sensor device, the time dependency of the weight change rate of the adhesive at the shortest distance of the straight line passing through the center and connecting the two ends is acquired ( FIG. 5).

  FIG. 5 is a characteristic diagram showing the time dependence of the weight change rate of the adhesive of Example 1. The horizontal axis of FIG. 5 is the elapsed time (h: hour) in which the test piece 20 is left after the adhesive piece 21 and the gel-like protective material sheet 22 are brought into contact with each other (elapsed time = 0h: initial state). . The vertical axis in FIG. 5 represents the weight change rate (%) of the adhesive piece 21 when the free oil concentration of the gel-like protective material sheet 22 is higher than the free oil concentration of the adhesive piece 21. The vertical axis in FIG. 5 indicates the increase in weight on the upper side of the weight change rate = 0%, and the lower side indicates the decrease in weight (the horizontal and vertical axes in FIGS. 6, 7A and 7B are the same as in FIG. 5). . That is, the weight change rate = 0% indicates the adhesive piece 21 before being brought into contact with the gel-like protective material sheet 22. The temperature around the test piece 20 was 150 ° C.

  From the results shown in FIG. 5, when the adhesive piece 21 and the gel-like protective material sheet 22 are made of the same material, swelling due to the diffusion of free oil occurs over time, and relatively free oil It was confirmed that the weight of the low concentration member increased. Here, the adhesive piece 21 swelled and the weight of the adhesive piece 21 increased. On the other hand, when the adhesive piece 21 and the gel-like protective material sheet 22 are made of different materials, it has been confirmed that the weight of the adhesive piece 21 does not substantially change regardless of the passage of time. Therefore, it is understood that the weight change of the gel protective material layer 5 and the adhesive layer 13 due to the diffusion of the free oil occurs between the gel protective material layer 5 and the adhesive layer 13 made of the same material. .

  Next, the free oil blending ratio of the adhesive piece 21 and the gel protective material sheet 22 in the case where the adhesive piece 21 and the gel protective material sheet 22 are made of the same material was verified. FIG. 6 is a characteristic diagram showing the dependence of the weight change rate of the adhesive of Example 1 on the free oil blending ratio. For the test piece 20, when there is a difference in free oil concentration between the adhesive piece 21 composed of the conventional adhesive A that does not contain free oil and the gel-like protective material sheet 22, the weight of the adhesive piece 21 The rate of change is shown in FIG. In this test piece 20, [free oil contained in the gel protective material sheet 22]: [free oil contained in the adhesive piece 21 composed of the adhesive A] = X: 0 (X is a positive number). .

  Moreover, the weight change rate of the adhesive piece 21 when the adhesive piece 21 is comprised with the adhesive agent B containing free oil by the same quantity as the gel-like protective material sheet 22 about the test piece 20 as a comparison is shown. In this test piece 20, [free oil contained in the gel-like protective material sheet 22]: [free oil contained in the adhesive piece 21 composed of the adhesive B] = X: X (X is a positive number). . In both the test piece 20 in which the adhesive piece 21 is made of the adhesives A and B, the adhesive piece 21 and the gel-like protective material sheet 22 are made of the same material. The temperature around the test piece 20 was 150 ° C.

  From the results shown in FIG. 6, when the adhesive piece 21 is composed of the conventional adhesive A, swelling due to diffusion of free oil occurs with time, and the weight of the member having a relatively low free oil concentration is increased. It was confirmed that it increased. Here, the adhesive piece 21 swelled and the weight of the adhesive piece 21 increased. On the other hand, in the adhesive piece 21 composed of the adhesive B with no difference in free oil concentration with the gel-like protective material sheet 22, it was confirmed that the weight of the adhesive piece 21 did not substantially change regardless of the passage of time. . Therefore, it can be seen that when there is no difference in free oil concentration between the gel-like protective material layer 5 and the adhesive layer 13 made of the same material, free oil hardly diffuses.

  Next, it verified about the temperature of the environment where the test piece 20 is left to stand. 7A and 7B are characteristic diagrams showing the temperature dependence of the rate of change in weight of the adhesive of Example 1. FIG. FIG. 7A shows the weight change rate of the adhesive piece 21 when the temperature of the environment in which the test piece 20 is left is set to −40 ° C., 25 ° C., and 150 ° C. Further, FIG. 7B shows the weight change rate of the adhesive piece 21 when the temperature of the environment in which the test piece 20 is left is set to 130 ° C., 150 ° C., and 170 ° C. In each test piece 20, the adhesive piece 21 and the gel protective material sheet 22 are made of the same material, and the free oil concentration of the gel protective material layer 5 is set higher than the free oil concentration of the adhesive layer 13. ing.

  From the results shown in FIG. 7A, it is confirmed that the higher the temperature of the environment in which the test piece 20 is left, the faster the swelling due to the diffusion of free oil and the faster the increase in the weight of the adhesive piece 21 with time. It was done. Moreover, when the temperature of the environment where the test piece 20 was left as it was too low with -40 degreeC, it was confirmed that the weight of the adhesive piece 21 does not change substantially even if time passes. Further, from the result shown in FIG. 7B, when the temperature of the environment in which the test piece 20 is left is 130 ° C. or more, the progress of the weight increase of the adhesive piece 21 is independent of the temperature of the environment in which the test piece 20 is left. It was confirmed that they were almost the same. For this reason, it is preferable that the heat history condition in the process of step S13 mentioned above shall be 130 degreeC or more.

  In addition, when the free oil density | concentration of the adhesive piece 21 is higher than the free oil density | concentration of the gel-like protective material sheet 22, the characteristic of the content which replaced the adhesive piece 21 and the gel-like protective material sheet 22 in Example 1 Is obtained.

(Example 2)
Next, a method for determining the thermal history condition given to the semiconductor physical quantity sensor device according to the embodiment in the process of step S13 described above will be described. Here, the free oil concentration of the gel protective material layer 5 is set higher than the free oil concentration of the adhesive layer 13. The output temperature of the semiconductor physical quantity sensor device was measured at -40 ° C. where the temperature of the environment in which the semiconductor physical quantity sensor device was stored was 150 ° C. and the adhesive layer 13 did not swell. An example of the output characteristics of the semiconductor physical quantity sensor device at this time is shown in FIG. FIG. 8 is a characteristic diagram illustrating the time dependence of the output fluctuation amount of the semiconductor physical quantity sensor device according to the second embodiment.

The horizontal axis in FIG. 8 represents the elapsed time (h: hour) from the end of step S11 (elapsed time = 0h: initial state) when the semiconductor physical quantity sensor device is left unattended. The vertical axis in FIG. 8 represents the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device according to the second embodiment. The vertical axis in FIG. 8 indicates the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device immediately after the process of step S13 as it goes downward from the output fluctuation amount (hereinafter referred to as initial output fluctuation amount) ΔV ₀ at the end of step S11. Indicates that it is growing. The larger the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device immediately after the process of step S13, the smaller the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device after the process of step S13.

First, the temperature of the environment in which the semiconductor physical quantity sensor device is stored is determined, and the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device when the semiconductor physical quantity sensor device is left in this temperature environment is acquired (see FIG. 8). Then, the difference between the output variation amount after n time [Delta] V _n and the (n-1) times after the output variation amount [Delta] V _(n-1) is less than 1% with respect to _{ΔV n ((ΔV n -ΔV (} n- ₁₎ The output fluctuation amount ΔV _out at the time when) / ΔV _n ≦ 1%) is defined as 100%, and the output fluctuation amount at that time is defined as ΔV ₄ . For example, in the example shown in FIG. 8, the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device when the thermal history condition is left for 15 hours in a temperature environment of 150 ° C. is defined as 100%.

The thermal history condition in which the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device is 100% is the most preferable condition that the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device does not substantially occur after the processing of step S13 (over 15 hours). It is a thermal history condition. Based on this most preferable heat history condition, the heat history condition to be given to the semiconductor physical quantity sensor device in the process of step S13 is determined. For example, when the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device after the process of step S13 is set to 100%, the process of step S13 may be performed under the most preferable heat history condition described above.

Further, the process of step S13 may be performed under a thermal history condition such that the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device immediately after the process of step S13 is less than 100%. In this case, the output fluctuates until the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device reaches 100% after the processing of step S13. However, since the processing of step S13 is performed, the output of the semiconductor physical quantity sensor device is changed. The fluctuation amount ΔV _out is smaller than that in the prior art.

Specifically, for example, it is assumed that the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device immediately after the process of step S13 is 50%. That is, it is assumed that the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device fluctuates by 50% at the maximum after the processing of step S13 (the output fluctuation amount ΔV _out is changed from 50% to 100%). In this case, for example, in a temperature environment of 150 ° C. or higher, the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device is 50% (ΔV _out / ΔV ₄ = 50%) of the output fluctuation amount ΔV _{0 with} respect to the initial output fluctuation amount ΔV ₀ . ₁ is when the semiconductor physical quantity sensor device is left for 2 hours in the process of step S13. For this reason, what is necessary is just to make thermal history conditions (henceforth a 1st condition) in the process of step S13 into 150 degreeC or more of temperature environments, and elapsed time to 2 hours or more.

Furthermore, it is assumed that the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device immediately after the process of step S13 is 75%. That is, it is assumed that the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device fluctuates by 25% at the maximum after the process of step S13 (the output fluctuation amount ΔV _out is changed from 75% to 100%). In this case, for example, in a temperature environment of 150 ° C. or higher, the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device is 75% (ΔV _out / ΔV ₄ = 75%) of the output fluctuation amount ΔV _{0 with} respect to the initial output fluctuation amount ΔV ₀ . ₂ is when the semiconductor physical quantity sensor device is left for 4 hours in the process of step S13. For this reason, what is necessary is just to make thermal history conditions (henceforth a 1st condition) in the process of step S13 into 150 degreeC or more of temperature environments, and 4 hours or more for elapsed time. As shown in FIG. 8, when it is 4 hours or more (output fluctuation amount of 75% or more), the slope of the subsequent fluctuation amount becomes small, which is preferable.

Further, in order to make the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device generated after the processing of step S13 smaller than that in the first condition, the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device immediately after the processing of step S13 is set. What is necessary is just to set higher than the case of the said 1st condition. For example, it is assumed that the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device immediately after the process of step S13 is increased to 90%. That is, it is assumed that the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device fluctuates by 10% at the maximum after the processing of step S13 (the output fluctuation amount ΔV _out is changed from 90% to 100%). In this case, for example, in a temperature environment of 150 ° C. or higher, the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device is 90% (ΔV _out / ΔV ₄ = 90%) of the output fluctuation amount ΔV _{0 with} respect to the initial output fluctuation amount ΔV ₀ . ₃ is when the semiconductor physical quantity sensor device is left for 10 hours in the process of step S13. For this reason, what is necessary is just to make thermal history conditions (henceforth 2nd condition) in the process of step S13 into 150 degreeC or more of temperature environments, and 10 hours or more as elapsed time.

Thus, taking into account the output variation amount [Delta] V _out of the semiconductor physical quantity sensor device that can be tolerated since the processing of step S13, it sets the output variation amount [Delta] V _out of the semiconductor physical quantity sensor apparatus immediately after the processing in step S13, the output Based on the fluctuation amount ΔV _out , the heat history condition in the process of step S13 may be determined.

(Example 3)
Next, a test method for determining a free oil blending ratio between the gel-like protective material layer 5 and the adhesive layer 13 in consideration of the output fluctuation amount ΔV _out (specification) of the semiconductor physical quantity sensor device allowed as a product. Will be described. FIG. 9 is a characteristic diagram showing the time dependence of the weight change rate of the adhesive of Example 3. FIG. 10 is an enlarged characteristic diagram showing the characteristic of the elapsed time in FIG. 9 (elapsed time = 0h to 16h). 9 and 10, the free oil concentration of the gel protective material layer 5 is higher than the free oil concentration of the adhesive layer 13.

  9 and 10, the horizontal axis represents the elapsed time (h: hour) in which the semiconductor physical quantity sensor device is left after the adhesive layer 13 and the gel-like protective material layer 5 are brought into contact with each other (elapsed time = 0 h). . 9 and 10 is the weight change rate (%) of the adhesive layer 13. 9 and 10, the upper side shows an increase in weight and the lower side shows a decrease in weight when the rate of change in weight = 0%. That is, the weight change rate = 0% indicates the adhesive layer 13 before being brought into contact with the gel-like protective material layer 5. The time dependency in FIGS. 8 to 10 serves as a reference for obtaining the free oil blending ratio between the gel-like protective material layer 5 and the adhesive layer 13, and the simulation or the test piece before performing the test. It is acquired in advance by measurement using 20.

First, when the semiconductor physical quantity sensor device is left under a thermal history condition for a predetermined time at a predetermined temperature based on, for example, a quality assurance standard, the time dependency of the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device (FIG. 8) and the adhesive The time dependency of the weight change rate of the layer 13 (FIGS. 9 and 10) is acquired. Next, from FIG. 9, a numerical value when the weight change rate of the adhesive layer 13 in the heat history condition is saturated is defined as a saturation value M _S of the weight change rate of the adhesive layer 13. Here, the weight change rate of the adhesive layer 13 in a temperature history condition of 500 hours in a temperature environment of 150 ° C. is defined as a saturation value M _S.

Next, the weight change rate of the adhesive layer 13 when the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device reaches Y% with respect to the initial output fluctuation amount ΔV _{0 is} a ratio based on the saturation value M _S ( = Saturation value M _S × Z, Z <1). In order to fabricate a semiconductor physical quantity sensor device that fluctuates by an output fluctuation amount ΔV _out of (100−Y)% or less until the weight change rate of the adhesive layer 13 is saturated, the gel-like protective material layer 5 and the adhesive layer 13 Is set to [free oil contained in the gel-like protective material layer 5]: [free oil contained in the adhesive layer 13] = X: ZX. The free oil blending ratio of the gel protective material layer 5 and the adhesive layer 13 may be set by blending the constituent materials of the gel protective material layer 5 and the adhesive layer 13 during the assembly process of the semiconductor physical quantity sensor device. And you may set by the process of step S13 after the said assembly process.

The elapsed time required until the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device is saturated is obtained from the time dependency of the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device shown in FIG. 8, for example. The value of the weight change rate of the adhesive layer 13 over time is equal to the value F% of the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device over time. For this reason, from the time dependence of the weight change rate of the adhesive layer 13 shown in FIGS. 9 and 10, when the output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device reaches F% with respect to the initial output fluctuation amount ΔV ₀ . The neglected time may be acquired.

Specifically, for example, from the time dependence of the output variation amount [Delta] V _out of the semiconductor physical quantity sensor apparatus as a reference shown in FIG. 8, the output variation amount [Delta] V _out of the semiconductor physical quantity sensor device relative to the initial output variation amount [Delta] V ₀ The left time (elapsed time = 2 hours) when 50% is reached is acquired. 9 and 10, the weight change rate of the adhesive layer 13 when the standing time of the semiconductor physical quantity sensor device is 2 hours is saturated from the time dependency of the weight change rate of the adhesive layer 13 serving as a reference shown in FIGS. Obtained at a ratio (= 0.15M _S ) based on the value M _S (ie, Y = 50%, Z = 0.15). Accordingly, when the remaining output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device is set to about 50%, the free oil blending ratio of the gel protective material layer 5 and the adhesive layer 13 is [included in the gel protective material layer 5 Free oil]: [free oil contained in the adhesive layer 13] = X: 0.15X.

The reaching from the time dependence of the output variation amount [Delta] V _out of the semiconductor physical quantity sensor apparatus as a reference shown in FIG. 8, to 75% power variation [Delta] V _out of the semiconductor physical quantity sensor device relative to the initial output variation amount [Delta] V ₀ The neglected time (elapsed time = 4 hours) is acquired. 9 and 10, the weight change rate of the adhesive layer 13 when the standing time of the semiconductor physical quantity sensor device is 4 hours is saturated from the time dependency of the weight change rate of the adhesive layer 13 serving as a reference shown in FIGS. Acquired at a ratio (= 0.32M _S ) based on the value M _S (ie, Y = 75, Z = 0.32). Therefore, when the remaining output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device is about 25%, the free oil blending ratio of the gel protective material layer 5 and the adhesive layer 13 is [included in the gel protective material layer 5 Free oil]: [free oil contained in the adhesive layer 13] = X: 0.32X.

The reaching from the time dependence of the output variation amount [Delta] V _out of the semiconductor physical quantity sensor apparatus as a reference shown in FIG. 8, up to 90% power variation [Delta] V _out is the initial output variation amount [Delta] V ₀ of the semiconductor physical quantity sensor device The neglected time (elapsed time = 10 hours) is acquired. Then, from the time dependence of the weight change rate of the adhesive layer 13 as a reference shown in FIGS. 9 and 10, the weight change rate of the adhesive layer 13 when the semiconductor physical quantity sensor device is left for 10 hours is saturated. Obtained at a ratio (= 0.55M _S ) based on the value M _S (ie, Y = 90, Z = 0.55). Therefore, when the remaining output fluctuation amount ΔV _out of the semiconductor physical quantity sensor device is set to about 10%, the free oil blending ratio of the gel protective material layer 5 and the adhesive layer 13 is [included in the gel protective material layer 5 Free oil]: [free oil contained in the adhesive layer 13] = X: 0.55X.

  In addition, when the free oil density | concentration of the adhesive bond layer 13 is higher than the free oil density | concentration of the gel-like protective material layer 5, the content which replaced the adhesive bond layer 13 and the gel-like protective material layer 5 in Example 2, 3. The following characteristics can be obtained.

  As described above, according to the embodiment, the adhesive layer that adheres the sensor unit to the resin case contains free oil, so that the adhesive layer and the inside of the resin case are filled. Diffusion of free oil between the gel-like protective material layer containing free oil can be suppressed. For this reason, physical properties such as elastic modulus, penetration and hardness of the adhesive layer and the gel-like protective material layer change over time due to swelling of the adhesive layer or the gel-like protective material layer due to the diffusion of free oil. Can be suppressed. For this reason, the output characteristic fluctuation | variation of a semiconductor pressure sensor apparatus can be suppressed rather than the conventional structure of the structure which does not contain free oil in an adhesive bond layer, and the physical quantity detection precision of a semiconductor pressure sensor apparatus can be improved.

  Further, according to the embodiment, by forming the adhesive layer and the gel-like protective material layer having the same free oil concentration, between the adhesive layer and the gel-like protective material layer after the assembly process of the semiconductor physical quantity sensor device. There is almost no diffusion of free oil. Alternatively, by leaving the semiconductor physical quantity sensor device in a room temperature or high temperature environment before adjusting the output characteristics of the semiconductor physical quantity sensor device, it is possible to adjust the free oil concentration difference between the adhesive layer and the gel-like protective material layer. . For this reason, after adjusting the output characteristics of the semiconductor physical quantity sensor device, diffusion of free oil between the adhesive layer and the gel-like protective material layer can be suppressed. As a result, fluctuations in output characteristics of the semiconductor pressure sensor device can be further suppressed.

  Further, according to the embodiment, since the gel-like protective material layer and the adhesive layer can be made of the same material, the deterioration degree of the gel-like protective material layer and the adhesive layer is made almost equal. And the output characteristics of the semiconductor physical quantity sensor device can be stably maintained.

  As described above, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the second and third embodiments described above, the case where the semiconductor physical quantity sensor device is left in a temperature environment of 150 ° C. has been described as an example. However, the temperature environment where the semiconductor physical quantity sensor device is left is not limited thereto. The semiconductor physical quantity sensor device may be left at room temperature. Further, the present invention is not limited to the above-described embodiment, and can be applied to the case of detecting physical quantities other than temperature and pressure such as acceleration, gyro (angle and angular velocity), and flow rate.

  As described above, the method for manufacturing a semiconductor physical quantity sensor device and the method for testing a semiconductor physical quantity sensor device according to the present invention are useful for a semiconductor physical quantity sensor device in which a gel protective material layer and an adhesive layer are made of the same material. Especially, it is suitable for the semiconductor pressure sensor device.

DESCRIPTION OF SYMBOLS 1 Resin case 2 Sensor mounting part 2a Side wall of sensor mounting part 3 Lead terminal 4 Bonding wire 5 Gel-like protective material layer 6 Electrode pad 10 Sensor unit 10a Side surface of sensor unit 11 Semiconductor sensor chip 11a Diaphragm 11b Recessed part 12 of semiconductor sensor chip 12 Base Member 13 Adhesive layer 13a Adhesive side face 20 Test piece 21 Adhesive piece 22 Gel protective material sheet ΔV ₀ Initial output fluctuation amount of semiconductor physical quantity sensor device ΔV _{1 to} ΔV ₄ Output fluctuation amount of semiconductor physical quantity sensor device

Claims (14)

A first step of housing a sensor unit having a sensor chip for converting a physical quantity into an electrical signal by bonding the sensor unit inside the resin case via an adhesive layer containing free oil;
A second step of filling the inside of the resin case with a protective material layer made of a gel material of the same system as the material constituting the adhesive layer and containing free oil, and covering the sensor unit with the protective material layer; ,
After the second step, a third step of adjusting the output characteristics of the sensor chip;
A method for manufacturing a semiconductor physical quantity sensor device, comprising:   2. The method of manufacturing a semiconductor physical quantity sensor device according to claim 1, wherein, in the second step, the protective material layer having the same free oil concentration as the adhesive layer is filled in the resin case.   After the second step and before the third step, free oil is diffused from the protective material layer to the adhesive layer between the adhesive layer and the protective material layer, and the adhesive layer and 2. The method of manufacturing a semiconductor physical quantity sensor device according to claim 1, further comprising a fourth step of making a difference in free oil concentration with the protective material layer smaller than a time point after completion of the second step.   4. The method according to claim 3, wherein, in the fourth step, the output fluctuation amount of the semiconductor physical quantity sensor device obtained in advance is left for a predetermined time at a predetermined temperature at which it is increased by 50% or more from the time after the completion of the second step. The manufacturing method of the semiconductor physical quantity sensor apparatus of description.   4. The method according to claim 3, wherein, in the fourth step, the output fluctuation amount of the semiconductor physical quantity sensor device obtained in advance is left for a predetermined time at a predetermined temperature that increases by 90% or more from the time after the completion of the second step. The manufacturing method of the semiconductor physical quantity sensor apparatus of description.   In the fourth step, the weight change rate of the adhesive layer is increased from the time after the end of the second step, so that the free oil concentrations of the adhesive layer and the protective material layer are the same. A method for manufacturing a semiconductor physical quantity sensor device according to claim 3.   7. The semiconductor physical quantity sensor according to claim 3, wherein, in the fourth step, the sensor unit housed in the resin case and covered with the protective material layer is left in a predetermined temperature atmosphere for a predetermined time. Device manufacturing method.   The method of manufacturing a semiconductor physical quantity sensor device according to claim 7, wherein the predetermined temperature is room temperature.   The method of manufacturing a semiconductor physical quantity sensor device according to any one of claims 4, 5, and 7, wherein the predetermined temperature is 130 ° C or higher.   8. The method of manufacturing a semiconductor physical quantity sensor device according to claim 4, wherein the predetermined temperature is an atmosphere equal to or higher than a temperature of an environment where the physical quantity is received. At the predetermined temperature,
A first acquisition step of acquiring a weight change rate of the adhesive layer with respect to the standing time of the sensor unit;
Based on the result of the first acquisition step, the weight change rate when the weight change of the adhesive layer is saturated is defined as a saturation value M _S, and the output fluctuation amount of the sensor chip is after the end of the second step. A second acquisition step of acquiring a weight change rate of the adhesive layer from the time point of Y to Y% at a ratio (= M _S × Z, Z <1) based on the saturation value M _S ;
In advance,
In the fourth step,
6. The method of manufacturing a semiconductor physical quantity sensor device according to claim 4, wherein the leaving time obtained in the first acquisition step is set as a predetermined time based on the result of the second acquisition step. 12. The method of manufacturing a semiconductor physical quantity sensor device according to claim 11, wherein, in the first acquisition step, a weight change rate of the adhesive layer after heating at 150 ° C. for 500 hours is defined as the saturation value M _S. . A sensor unit having a sensor chip for converting a physical quantity into an electric signal, a resin case for housing the sensor unit by bonding through an adhesive layer, and filling the inside of the resin case to cover the sensor unit A test method of a semiconductor physical quantity sensor device comprising a protective material layer,
The adhesive layer comprises free oil;
The protective material layer is made of a gel material of the same system as the material constituting the adhesive layer, includes free oil at a concentration different from that of the adhesive layer, and is in contact with the adhesive layer,
The sensor unit housed in the resin case and covered with the protective material layer is allowed to stand for a predetermined time in an atmosphere at a predetermined temperature, and the protective material is transferred to the adhesive layer between the adhesive layer and the protective material layer. A first acquisition step of diffusing free oil from the layer and acquiring a weight change rate of the adhesive layer with respect to the standing time;
Based on the results of the first acquisition step, the weight change rate when the change in weight of the adhesive layer is saturated is defined as the saturation value M _S, the output variation of the sensor chip is made of an initial state to Y% A second acquisition step of acquiring a weight change rate of the adhesive layer up to a ratio (= M _S × Z, Z <1) based on the saturation value M _S ;
A test method for a semiconductor physical quantity sensor device, comprising: In the first acquisition step, the method of testing a semiconductor physical quantity sensor device according to claim 13, characterized in that the weight change ratio of the adhesive layer after heating at 0.99 ° C. 500 hours is defined as the saturation value M _S .

Images