JP2018125348A - Penetration electrode substrate, method of manufacturing the penetration electrode substrate, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a through-electrode substrate having a through electrode with high adhesion.SOLUTION: A method for manufacturing a through-electrode substrate 100 comprises the steps of: forming an underlying layer 120 including metal oxide on an inner face of a through-hole in a substrate 110 having a first face 110A, a second face 110B opposed to the first face, and a through-hole 115; forming, by sputtering, a first conductive layer 130 on the first face so as to be in contact with at least an end of the through-hole; forming, by sputtering, a second conductive layer 132 on the second face so as to be in contact with at least an end of the through-hole; forming, by electroless plating, a third conductive layer 140 on the underlying layer disposed on the inner face of the through-hole, and on the first and second conductive layers; and forming, by electrolytic plating, a through electrode 150 on the third conductive layer so as to fill the through-hole.SELECTED DRAWING: Figure 2

Description

  The present disclosure relates to a through electrode substrate and a method for manufacturing the through electrode substrate.

  A three-dimensional mounting technique in which semiconductor elements including integrated circuits and RF (Radio Frequency) elements are stacked vertically is widely used. In this technique, a through electrode is used. Thereby, the semiconductor element and the RF element are electrically connected on both sides of the substrate. An RF element using a through electrode has also been developed. Patent Document 1 discloses an RF element using a through electrode and a method for manufacturing the RF element.

JP-T-2006-502261

  The through electrode is formed by filling a conductive layer by electrolytic plating after forming a seed layer in the through hole. The seed layer is formed by sputtering or electroless plating. For example, when the seed layer is formed by the electroless plating method, there is an advantage that it can be formed uniformly even if the aspect ratio of the through hole is large. On the other hand, there is a problem in the adhesion between the substrate and the seed layer, and there is a concern that the penetration electrode may be peeled off.

  In view of such a problem, an object of the embodiment of the present disclosure is to provide a through electrode substrate having a through electrode with high adhesion.

  According to an embodiment of the present disclosure, in a substrate having a first surface, a second surface facing the first surface, and a through hole, an underlayer including a metal oxide is formed on an inner surface of the through hole, A first conductive layer is formed on the surface by a sputtering method so as to be in contact with at least the end portion on the through hole side, and a second conductive layer is formed on the second surface by a sputtering method so as to be in contact with at least the end portion on the through hole side. And forming a third conductive layer on the base layer, the first conductive layer, and the second conductive layer disposed on the inner surface of the through hole by an electroless plating method, and on the third conductive layer, There is provided a method of manufacturing a through electrode substrate including forming a through electrode by electrolytic plating so as to fill the through hole.

  In the method for manufacturing the through electrode substrate, the base layer may be formed by an immersion method.

  In the method for manufacturing the through electrode substrate, a treatment at 400 ° C. or higher and lower than 600 ° C. may be performed after the formation of the underlayer.

  In the method of manufacturing the through electrode substrate, forming the first conductive layer and the second conductive layer may include a roughening treatment on the surface of the first conductive layer and the surface of the second conductive layer.

  According to an embodiment of the present disclosure, a first surface, a substrate having a second surface facing the first surface, and a through hole, a base layer including a metal oxide provided on an inner surface of the through hole, A first conductive layer disposed on one surface and in contact with the end of the through hole, a second conductive layer disposed on the second surface and in contact with the end of the through hole, and an inner surface of the through hole A through electrode substrate comprising: a third conductive layer provided on the base layer, the first conductive layer and the second conductive layer; and a through electrode which is on the third conductive layer and penetrates the through hole. Is provided.

  In the through electrode substrate, the first conductive layer may be provided on an inner surface of the through hole.

  The metal oxide may be provided on at least one of the first surface and the second surface.

  In the through electrode substrate, the underlayer may be zinc oxide.

  In the through electrode substrate, the first conductive layer, the second conductive layer, the third conductive layer, and the through electrode may include copper.

  In the through electrode substrate, the third conductive layer may include palladium.

  According to one embodiment of the present disclosure, a semiconductor device including the through electrode substrate is provided.

  According to an embodiment of the present disclosure, it is possible to provide a through electrode substrate having a through electrode with high adhesion.

It is a top view explaining a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is a top view explaining a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is a top view explaining a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a semiconductor device containing a penetration electrode substrate concerning one embodiment of this indication. It is a perspective view explaining electronic equipment containing a semiconductor device concerning one embodiment of this indication. It is a sectional view explaining a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a penetration electrode substrate concerning one embodiment of this indication.

  Hereinafter, the through electrode substrate and the like according to each embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, each embodiment shown below is an example of embodiment of this indication, Comprising: This indication is limited to these embodiment and is not interpreted. Note that in the drawings referred to in the present embodiment, the same portions or portions having similar functions are denoted by the same reference symbols or similar symbols (symbols only having xxx-1.xxx-2, etc.). The repeated description may be omitted. In addition, the dimensional ratio in the drawing may be different from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

  Note that in this specification, terms such as “above” and “below” are used for convenience in describing the positional relationship between components with reference to the drawings. Moreover, the positional relationship between components changes suitably according to the direction which draws each structure. Therefore, the present invention is not limited to the words and phrases described in the specification, and can be appropriately rephrased depending on the situation.

<First Embodiment>
(1-1. Configuration of the through electrode substrate)
FIG. 1 shows a cross-sectional view of the through electrode substrate 100. FIG. 2 shows a cross-sectional view of the through electrode substrate 100 between A1 and A2. As shown in FIGS. 1 and 2, the through electrode substrate 100 includes a substrate 110, a base layer 120, a first conductive layer 130, a second conductive layer 132, a third conductive layer 140, and a through electrode 150.

  The substrate 110 has a first surface 110A and a second surface 110B facing the first surface 110A. The substrate 110 is provided with a through hole 115. As shown in FIG. 1, the through-hole 115 when viewed from above may have a circular shape. The diameter of the through hole 115 may be 10 μm or more and less than 100 μm.

  A high resistance material is used for the substrate 110. For example, as the substrate 110, a soda glass substrate or a non-alkali glass substrate is used. The thickness of the substrate 110 may be appropriately set to be 200 μm or more and less than 700 μm. For example, the thickness of the substrate 110 may be 400 μm.

  The foundation layer 120 is provided on the inner surface of the through hole 115, the first surface 110 </ b> A and the second surface 110 </ b> B of the substrate 110. The underlayer 120 includes a metal oxide. For example, zinc oxide is used as the metal oxide. The underlayer 120 functions as an adhesion layer that improves adhesion between the substrate 110 and the third conductive layer 140.

  The first conductive layer 130 is a portion of the base layer 120 that is disposed on the first surface 110A and is in contact with at least the end 120A on the through hole 115 side. In this example, the first conductive layer 130 is partially provided on the inner side surface of the through hole 113, but is not limited thereto. The first conductive layer 130 may include gold (Au), silver (Ag), copper (Cu), and nickel (Ni). A large number of minute irregularities may be provided on the surface of the first conductive layer 130.

  The second conductive layer 132 is a portion of the base layer 120 that is disposed on the second surface 110B and is in contact with at least the end 120B on the through hole 115 side. In this example, like the first conductive layer 130, the second conductive layer 132 is partially provided on the inner surface of the through hole 113, but is not limited thereto. The second conductive layer 132 may be made of the same material as the first conductive layer 130.

  The third conductive layer 140 is provided on the foundation layer 120 disposed on the inner surface of the through hole 115. The third conductive layer 140 is provided on the first conductive layer 130 (the upper surface 130A and the inner side surface 130B). The third conductive layer 140 is provided on the second conductive layer 132 (the upper surface 132A and the inner side surface 132B). The third conductive layer 140 may include copper (Cu). The third conductive layer 140 may contain palladium (Pd).

  The through electrode 150 is on the third conductive layer 140 and fills the through hole 115. A low resistance material is used for the through electrode 150. For example, the through electrode 150 may be made of a material containing gold (Au), silver (Ag), copper (Cu), nickel (Ni), or tin (Sn). For example, the first conductive layer 130, the second conductive layer 132, the third conductive layer 140, and the through electrode 150 may all contain copper.

  In the above structure, the first conductive layer 130, the second conductive layer 132, and the third conductive layer 140 have a function as a seed layer of the through electrode 150.

(1-2. Manufacturing method of through electrode substrate)
Next, a method for manufacturing the through electrode substrate 100 shown in FIG. 1 will be described with reference to FIGS.

First, the substrate 110 having the first surface 110A, the second surface 110B facing the first surface 110A, and the through hole 115 is formed. As shown in FIG. 3, for example, the substrate 110 includes a quartz glass substrate, a soda glass substrate, a borosilicate glass substrate, an alkali-free glass substrate, a sapphire substrate, a silicon substrate, a silicon carbide substrate, and an alumina (Al ₂ O ₃ ) substrate. An aluminum nitride (AlN) substrate, a zirconia (ZrO ₂ ) substrate, a resin substrate containing acrylic or polycarbonate, or a laminate of these substrates is used. Specifically, a soda glass substrate or a non-alkali glass substrate is used as the substrate 110.

  Next, as shown in FIG. 4, a through hole 115 is formed in the substrate 110. The through-hole 115 is formed by using, for example, a laser irradiation method (which can be called a laser ablation method) for the substrate 110. As the laser, an excimer laser, a neodymium: yag laser (Nd: YAG) laser, a femtosecond laser, or the like is used. When an excimer laser is used, light in the ultraviolet region is irradiated. For example, when xenon chloride is used in an excimer laser, light having a wavelength of 308 nm is irradiated. In addition, the irradiation diameter by a laser is good also as 10 micrometers or more and less than 100 micrometers. The hole diameter of the through hole 115 can be appropriately changed within a range of 10 μm or more and less than 100 μm. By using the above method, the through hole 115 has a circular shape when viewed from above. A plurality of through holes 115 may be provided.

The formation of the through-hole 115 is not limited to the laser irradiation method, and a dry etching method such as a reactive ion etching method or a deep reactive ion etching method, a wet etching method, or a laser irradiation method may be used. And a wet etching method may be used in combination. As an etchant for the wet etching method, hydrogen fluoride (HF), sulfuric acid (H ₂ SO ₄ ), nitric acid (HNO ₃ ), hydrochloric acid (HCl), or an alkaline solution is used. For example, when etching a glass substrate, hydrofluoric acid is used.

  Next, as illustrated in FIG. 5, the base layer 120 is formed on the inner surface of the through hole 115, the first surface 110 </ b> A and the second surface 110 </ b> B of the substrate 110. The underlayer 120 may be formed by a dipping method. The underlayer 120 includes a metal oxide. For example, zinc oxide is used as the metal oxide. Specifically, the base layer 120 is formed by immersing the substrate 110 in a solution containing zinc acetate dihydrate.

  Note that heat treatment may be performed after the base layer 120 is formed. The heat treatment may be performed in a range of 400 ° C. or higher and lower than 600 ° C. By this treatment, the underlayer 120 is cured.

  Next, as shown in FIG. 6, the first conductive layer 130 is formed so as to be in contact with at least the end portion 120 </ b> A on the through hole 115 side of the base layer 120, which is disposed on the first surface 110 </ b> A. To do. In this example, the first conductive layer 130 is also formed on the inner side surface of the through hole 115, but is not limited thereto. The first conductive layer 130 is formed by a sputtering method or a vacuum evaporation method. For the first conductive layer 130, gold (Au), silver (Ag), copper (Cu), or nickel (Ni) is used. Note that the formation of the first conductive layer 130 may include a roughening treatment. As the roughening treatment, blast treatment or etching treatment may be performed. As a result, minute irregularities are formed on the surface of the first conductive layer 130.

  The second conductive layer 132 is a portion of the base layer 120 that is disposed on the second surface 110B and is formed so as to be in contact with at least the end 120B on the through hole 115 side. In this example, the second conductive layer 132 is also formed on the inner surface of the through hole 115 as in the case of the first conductive layer 130, but is not limited thereto. The second conductive layer 132 is formed using the same material and method as the first conductive layer 130.

  Next, as shown in FIG. 7, the third conductive layer 140 is formed on the base layer 120, the first conductive layer 130, and the second conductive layer 132 disposed on the inner surface of the through hole 115. The third conductive layer 140 is formed by an electroless plating method.

  The electroless plating method will be described below. When performing electroless plating, a conditioner, an activator, a metal salt, a reducing agent, a complexing agent, or the like is used. The conditioner is used as a pretreatment agent. The conditioner is used to make the Pd catalyst easily adhere to the surfaces of the base layer 120, the first conductive layer 130, and the second conductive layer 132. The activator is used to form a Pd catalyst on the surface. A metal salt is a material for depositing a metal. For example, when performing copper plating, copper sulfate is used. The reducing agent is used to reduce the metal salt. As the reducing agent, dimethylaminoborane (DMAB), formaldehyde, hydrazine hydrochloride, hydrazine sulfate, or the like is used. The complexing agent is used to control the deposition rate of the metal film. As the complexing agent, ethylenediaminetetraacetic acid (EDTA), Rochelle salt (L-potassium sodium tartrate tetrahydrate), citrate ion or the like is used. Moreover, before performing electroless plating, you may perform a degreasing process. Moreover, you may perform a roughening process before performing electroless plating. Further, heat treatment may be performed after the third conductive layer is formed.

  Next, as shown in FIG. 8, the first conductive layer 130, the second conductive layer 132, and the third conductive layer 140 are processed into a predetermined shape. When the first conductive layer 130, the second conductive layer 132, and the third conductive layer 140 are processed, a photolithography method, an imprint method, a printing method, and an etching method may be used. Further, a resist film may be formed in advance before forming the first conductive layer 130, the second conductive layer 132, and the third conductive layer 140.

  Next, the through electrode 150 is formed on the third conductive layer 140. The through electrode 150 includes copper (Cu), nickel (Ni), gold (Au), silver (Ag), tin (Sn), and the like. The through electrode 150 is formed by an electrolytic plating method. The through electrode 150 is formed to be filled. After the through electrode 150 is formed, a planarization process may be performed by a chemical mechanical polishing (CMP) method.

  The through electrode substrate 100 is manufactured by the above method. Here, in the through electrode substrate, the first surface 110 </ b> A and the second surface 110 </ b> B of the through electrode substrate 100 become a metal-metal laminate, and bonding occurs. In addition, on the inner side surface of the through-hole 115, a metal-metal oxide stack is formed and bonding occurs. Considering the metal-metal oxide laminate bonding, a difference in thermal expansion coefficient occurs between the metal and the metal oxide by heat treatment. Thereby, distortion (stress concentration) occurs, and the metal film may be peeled off. (For example, one may be tensile stress and the other may be compressive stress.) However, the through electrode substrate 100 shown in the present embodiment has a hole internal structure, and the through hole has a columnar structure. . For this reason, since the end portion does not exist when the stress is dispersed, the metal film can be prevented from peeling off. In addition, when considering the laminated bonding of a metal film (for example, a copper film) formed by a sputtering method and a metal film (for example, a copper film) formed by an electroless plating method, the variation in stress is the same in any film. Show the trend. Therefore, the copper film does not peel off between the copper films. Further, the first conductive layer 130 and the second conductive layer 132 are in contact with the end portion of the inner side surface of the through hole 115. Accordingly, when the through electrode 150 is formed on the third conductive layer 140, the upper electrode and the lower electrode of the through hole 115 are filled and formed with high adhesion. Therefore, even if the adhesiveness is low in the through-hole 115, film peeling is prevented. As described above, the through electrode substrate 100 can have high adhesion.

  Note that the heat treatment is performed after the formation of the third conductive layer 140, whereby the bonding is strengthened, and the adhesion between the first conductive layer 130 and the third conductive layer 140 and the second conductive layer 132 and the third conductive layer 140 is further improved. To do. Further, by performing the roughening treatment on the surfaces of the first conductive layer 130, the second conductive layer 132, and the base layer 120, an anchor effect is obtained and the adhesion of the third conductive layer is further improved.

Second Embodiment
(2-1. Configuration of the through electrode substrate)
Next, through electrode substrates having different structures will be described. In addition, about the structure, material, and method which were shown in 1st Embodiment, the description is used.

  FIG. 9 shows a cross-sectional view of the through electrode substrate 1100. FIG. 10 is a cross-sectional view taken along the line B1-B2 of the through electrode substrate 1100. As shown in FIGS. 9 and 10, the through electrode substrate 1100 includes a substrate 110, a base layer 120, a through electrode 150, a first conductive layer 130, a second conductive layer 132, a third conductive layer 141, and the through electrode 150. .

  The substrate 110 has a first surface 110A and a second surface 110B facing the first surface 110A. The substrate 110 is provided with a through hole 115.

  The underlayer 120 is provided on the inner surface of the first surface 110 </ b> A, the second surface 110 </ b> B, and the through hole 115 of the substrate 110.

  The first conductive layer 130 is a portion of the base layer 120 that is disposed on the first surface 110A and is in contact with at least the end 120A on the through hole 115 side. In this example, the first conductive layer 130 is partially provided on the inner side surface of the through hole 113, but is not limited thereto.

  The second conductive layer 132 is a portion of the base layer 120 that is disposed on the second surface 110B and is in contact with at least the end 120B on the through hole 115 side. In this example, like the first conductive layer 130, the second conductive layer 132 is partially provided on the inner surface of the through hole 113, but is not limited thereto.

  The third conductive layer 141 is provided on the foundation layer 120 provided on the inner surface of the through hole 115. Further, the third conductive layer 141 is in contact with the inner side surface 130B of the first conductive layer 130 on the through hole 115 side. Further, the third conductive layer 141 is in contact with the inner side surface 132B of the second conductive layer 132 on the through hole 115 side. The third conductive layer 141 is made of the same material as the third conductive layer 140 of the first embodiment.

  The through electrode 150 is formed on the first conductive layer 130, the second conductive layer 132, and the third conductive layer 141, and fills the through hole 115.

(2-2. Manufacturing method of through electrode substrate)
Next, a method of manufacturing the through electrode substrate 1100 is shown in FIGS.

  First, the substrate 110 having the first surface 110A and the second surface 110B facing the first surface 110A is used. Next, the through hole 115 is formed in the substrate 110. Next, the foundation layer 120 is formed on the inner surface of the first surface 110 </ b> A, the second surface 110 </ b> B, and the through hole 115 of the substrate 110.

  Next, as shown in FIG. 11, the first conductive layer 130 is formed so as to be in contact with at least the end portion 120 </ b> A on the through hole 115 side, which is the portion of the base layer 120 that is disposed on the first surface 110 </ b> A. To do. Further, as shown in this example, the first conductive layer 130 may also be formed on the inner surface of the through hole 115. In addition, the second conductive layer 132 is formed so as to be in contact with at least the end 120B on the through hole 115 side, which is the portion of the base layer 120 that is disposed on the second surface 110B. Further, as shown in this example, the second conductive layer 132 may also be formed on the inner surface of the through hole 115.

  Next, as illustrated in FIG. 12, a resist film 135 is formed on the upper surface 130 </ b> A of the first conductive layer 130. A resist film 137 is formed on the upper surface 132 A of the second conductive layer 132. The resist film 135 and the resist film 137 are formed by a photolithography method. A dry film resist is used for the resist film 135 and the resist film 137.

  Next, as shown in FIG. 13, the third conductive layer 140 is formed on the inner side surface of the foundation layer 120, the inner side surface 130 </ b> B of the first conductive layer 130, and the inner side surface 132 </ b> B of the second conductive layer 132. As shown in this example, the third conductive layer 140 may be formed on the resist film 135 and the resist film 137. The third conductive layer 140 has a thickness of several nm to several tens of nm and is very thin. For this reason, the resist removing liquid (sometimes referred to as resist stripping liquid) penetrates into the resist film 135 and the resist film 137 under the third conductive layer 140. As shown in FIG. 14, when the resist film 135 and the resist film 137 are removed, the third conductive layer 140 on the resist film 135 and the resist film 137 is also removed (lifted off), thereby the third conductive layer. 140 through-hole portions (conductive layer 141) are formed.

  Next, as illustrated in FIG. 15, a resist film 136 is formed on the upper surface 130 </ b> A of the first conductive layer 130. A resist film 138 is formed on the upper surface 132 A of the second conductive layer 132. The resist film 136 and the resist film 138 are formed by photolithography similarly to the resist film 135 and the resist film 137. As the resist film 136 and the resist film 138, a dry film resist similar to the resist film 135 and the resist film 137 is used. The resist film 136 and the resist film 138 are also formed thick so that the through electrode 150 can be formed thick.

  Next, as shown in FIG. 16, the through electrode 150 is formed on the conductive layer 141 and the exposed first conductive layer 130 and first conductive layer 132. The through electrode 150 is formed by an electrolytic plating method. After the through electrode 150 is formed, the resist film 136 and the resist film 138 are removed. Further, the first conductive layer 130 under the resist film 136 and the resist film 138 under the second conductive layer 132 are removed. Thus, the through electrode substrate 1100 shown in FIG. 10 is manufactured. Note that the above-described forming method can be referred to as a semi-additive method.

  In addition, without providing the resist film 135 and the resist film 137, the inner surface of the through-hole 115 of the base layer 120, the first conductive layer 130 (upper surface 130A and inner surface 130B), and the second conductive layer 132 (upper surface 132A and The third conductive layer 140 may be formed on the inner side surface 132B). In this case, after forming the third conductive layer 140, a processing process such as an etching process or a CMP polishing is performed so that the upper surface 130A of the first conductive layer 130 and the upper surface 132A of the second conductive layer 132 are exposed. For example, the through hole 115 is filled with a resist, and a liquid that can be selectively etched in the first conductive layer 130, the second conductive layer 132, and the third conductive layer 140 is selected and an etching process is performed. At this time, the third conductive layer 140 is etched, and the first conductive layer 130 and the second conductive layer 132 are not etched. Thereafter, when the resist filled in the through hole 115 is removed, the structure shown in FIG. 14 is obtained. At this time, the portion of the third conductive layer 140 on the upper surface 130A of the first conductive layer 130 and the portion of the upper surface 132A of the second conductive layer 132 are etched while receding in the direction of the through hole 115. However, if the conductive layer 141 is formed by etching so that the third conductive layer 140 is largely retracted, the conductive layer 141 and the first conductive layer 130 may not be connected, and electrolytic plating may not be performed. Therefore, it is desirable to appropriately control the etching amount of the third conductive layer 140 (for example, to control the etching time) to such an extent that the conductive layer 141 and the first conductive layer 130 can be connected.

  The through electrode substrate 1100 differs from the through electrode substrate 100 in that the first conductive layer 130 and the second conductive layer 132 are in contact with the through electrode 150. The first conductive layer 130 and the second conductive layer 132 are formed by a sputtering method, and the adhesion to the through electrode 150 is higher than that of a conductive layer formed by an electroless plating method. Therefore, it is possible to provide a through electrode substrate having high adhesiveness equivalent to or higher than that of the through electrode substrate 100.

<Third Embodiment>
(3-1. Configuration of the through electrode substrate)
Further, through electrode substrates having different structures will be described. In addition, about the structure, material, and method shown in 1st Embodiment and 2nd Embodiment, the description is used.

  FIG. 17 shows a cross-sectional view of the through electrode substrate 2100. FIG. 18 is a cross-sectional view taken along the line C1-C2 of the through electrode substrate 2100. As shown in FIGS. 17 and 18, the through electrode substrate 1100 includes a substrate 110, a base layer 120, a through electrode 150, a first conductive layer 130, a second conductive layer 132, a third conductive layer 141, and the through electrode 150. .

  The substrate 110 has a first surface 110A and a second surface 110B facing the first surface 110A. The substrate 110 is provided with a through hole 115.

  The underlayer 120 is provided only on the inner surface of the through hole 115.

  The first conductive layer 130 is a portion of the base layer 120 that is disposed on the first surface 110A and is in contact with at least the end 120A on the through hole 115 side. In this example, the first conductive layer 130 is partially provided on the inner side surface of the through hole 113, but is not limited thereto.

  The second conductive layer 132 is a portion of the base layer 120 that is disposed on the second surface 110B and is in contact with at least the end 120B on the through hole 115 side. In this example, like the first conductive layer 130, the second conductive layer 132 is partially provided on the inner surface of the through hole 113, but is not limited thereto.

  The third conductive layer 141 is provided on the base layer 120. Further, the third conductive layer 141 is in contact with the inner side surface 130B of the first conductive layer 130 on the through hole 115 side. Further, the third conductive layer 141 is in contact with the inner side surface 132B of the second conductive layer 132 on the through hole 115 side. The third conductive layer 141 is made of the same material as the third conductive layer 140 of the first embodiment.

  The through electrode 150 is formed on the first conductive layer 130, the second conductive layer 132, and the third conductive layer 141, and fills the through hole 115.

(3-2. Manufacturing method of through electrode substrate)
Next, a method of manufacturing the through electrode substrate 2100 is shown in FIGS.

  First, the substrate 110 having the first surface 110A and the second surface 110B facing the first surface 110A is used. Next, the through hole 115 is formed in the substrate 110. Next, the foundation layer 120 is formed on the inner surface of the first surface 110 </ b> A, the second surface 110 </ b> B, and the through hole 115 of the substrate 110.

  Next, as shown in FIG. 19, the base layer 120 is formed on the inner surface of the through hole 115. At this time, the base layer 120 corresponds to the first surface 110A and the second surface 110B after the base layer 120 is formed on the inner surface of the through-hole 115 and the first surface 110A and the second surface 110B of the substrate 110. The portion may be removed by a CMP method.

Next, as shown in FIG. 20, the first conductive layer 130 (for example, a portion of the base layer 120 disposed on the first surface 110 </ b> A and in contact with the end 120 </ b> A on the through hole 115 side) , By sputtering). Further, as shown in this example, the first conductive layer 130 may also be formed on the inner surface of the through hole 115. In addition, the second conductive layer 132 is formed (for example, by a sputtering method) so as to be in contact with at least the end 120B on the through hole 115 side, which is the portion of the base layer 120 that is disposed on the second surface 110B. . Further, as shown in this example, the second conductive layer 132 may also be formed on the inner surface of the through hole 115.

  Next, a resist film 135 is formed on the upper surface 130 </ b> A of the first conductive layer 130. A resist film 137 is formed on the upper surface 132 A of the second conductive layer 132. The resist film 135 and the resist film 137 are formed by a photolithography method.

  Next, as shown in FIG. 21, the third conductive layer 140 is applied to the inner side surface of the underlayer 120, the inner side surface 130B of the first conductive layer 130, and the inner side surface 132B of the second conductive layer 132 (for example, an electroless plating method). To form). As shown in this example, the third conductive layer 140 may be formed on the resist film 135 and the resist film 137. Since the third conductive layer 140 is very thin, the resist removing solution penetrates into the resist film 135 and the resist film 137 under the third conductive layer 140. For this reason, when the resist film 135 and the resist film 137 are removed as shown in FIG. 21, the resist film 135 and the third conductive layer 140 on the resist film 137 are also removed. Thereby, the through-hole part (conductive layer 141) of the 3rd conductive layer 140 is formed.

  Next, as illustrated in FIG. 23, a resist film 136 is formed on the upper surface 130 </ b> A of the first conductive layer 130. A resist film 138 is formed on the upper surface 132 A of the second conductive layer 132. The resist film 136 and the resist film 138 are formed by photolithography similarly to the resist film 135 and the resist film 137. As the resist film 136 and the resist film 138, a dry film resist similar to the resist film 135 and the resist film 137 is used. Note that the resist film 136 and the resist film 138 are formed thick so that the through electrode 150 can be formed thick.

  Next, as shown in FIG. 24, the through electrode 150 is formed on the conductive layer 141 and the exposed first conductive layer 130 and first conductive layer 132. The through electrode 150 is formed by an electrolytic plating method. After the through electrode 150 is formed, the resist film 136 and the resist film 138 are removed. Further, the first conductive layer 130 under the resist film 136 and the second conductive layer 132 under the resist film 138 are removed. Thus, the through electrode substrate 2100 shown in FIG. 17 is manufactured.

  The through electrode substrate 2100 differs from the through electrode substrate 100 and the through electrode substrate 1100 in that the base layer 120 is provided only on the inner surface of the through hole 115. Since the base layer 120 is not provided on the first surface 110A and the second surface 110B of the substrate 110, the substrate 110 and the metal material can be bonded. For example, as in the same film as the glass substrate, the adhesion between the substrate and the metal material is increased, so that it is possible to provide a through electrode substrate having high adhesion equivalent to or higher than that of the through electrode substrate 100. .

<Fourth embodiment>
In the present embodiment, a semiconductor device including the through electrode substrate described in the first to third embodiments will be described.

  FIG. 25 is a cross-sectional view of the semiconductor device 500. In FIG. 25, a semiconductor device 500 includes an RF element 600, a semiconductor element 610 formed into a chip including a transistor, a wiring substrate 700, and a package substrate 800. The semiconductor element 610 functions as a central processing unit (CPU) or a storage device. The wiring board 700 has a function as an interposer. The through electrode substrate 100 is included in at least one of the RF element 600, the semiconductor element 610, and the wiring substrate 700. The RF element 600 and the semiconductor element 610 are connected to the wiring board 700 using gold bumps 650 or the like. Further, the RF element 600 and the semiconductor element 610 may be sealed with a mold resin. In addition, the wiring substrate 700 and the package substrate 800 are connected using solder bumps 750 containing tin, silver, or the like. Further, the gap between the wiring substrate 700 and the package substrate 800 may be sealed by being filled with an underfill resin. The semiconductor device 500 may be used for noise elimination or for a signal filter.

<Fifth Embodiment>
In this embodiment, an example in which the semiconductor device 500 described in the third embodiment is applied to an electric device will be described.

  FIG. 26 is a diagram illustrating an electrical device. The semiconductor device 500 including the RF element 600 and the semiconductor element 610 includes, for example, a mobile terminal (mobile phone, smartphone and notebook personal computer, game machine, etc.), information processing device (desktop personal computer, server, car navigation, etc.). It is installed in various electric appliances such as household electric appliances (microwave ovens, air conditioners, washing machines, refrigerators) and automobiles. FIG. 26A illustrates a smartphone 4000 which includes a housing 4001, a display portion 4003, a microphone 4005, a speaker 4007, a button 4009, a camera 4011, and the like. FIG. 26B illustrates a portable game machine 5000, which includes a housing 5001, a display portion 5003, a display portion 5005, a button 5007, a button 5009, a button 5010, a speaker 5011, a microphone 5013, a camera 5015, and the like. FIG. 26C illustrates a laptop personal computer 6000, which includes a housing 6001, a display portion 6003, a keyboard 6005, a touch pad 6007, buttons 6009, a camera 6011, and the like.

  In these electrical devices, the semiconductor device 500 can have functions such as a noise filter, a signal filter, and a control unit configured by a CPU or the like that implements various functions by executing application programs.

<Modification>
In the first embodiment of the present disclosure, the example in which the first conductive layer 130 is provided on the inner surface of the through hole 115 has been described, but the present invention is not limited thereto. For example, as shown in FIG. 27, the first conductive layer 130 may be provided on the first surface 110A. The second conductive layer 132 is provided on the second surface 110B. By having this structure, the space is widened, and the through electrode substrate 100-1 can easily form the through electrode 150.

  In the embodiment of the present disclosure, an example in which the through electrode 150 is filled in the through hole 115 has been described. However, as illustrated in FIG. 28, a through electrode 151 that is not filled may be formed. As shown in FIG. 28, the through electrode substrate 100-2 includes a substrate 110, a base layer 120, a through electrode 150, a first conductive layer 130, a second conductive layer 132, a third conductive layer 140, and a through electrode 151. The through electrode 151 is provided on the inner surface of the through hole 115, and has a space inside the through hole 115. An insulating layer such as a resin may be provided in the space.

  Further, the first conductive layer 130, the second conductive layer 132, the third conductive layer 140, and the through electrode 151 may be appropriately extended. As shown in FIG. 29, the through electrode substrate 100-3 includes a substrate 110, a base layer 120, a first conductive layer 130, a second conductive layer 132, a third conductive layer 140, and a through electrode 151-3. When the through electrode 151 is extended, the through electrode 151-3 may be used as a wiring.

  Further, in the embodiment of the present disclosure, the example in which the through hole 115 penetrates from the first surface 110 </ b> A to the second surface of the substrate 110 has been described. An electrode substrate 100-4 illustrated in FIG. 30 includes a substrate 110, a hole 116, a base layer 120, a first conductive layer 130, a third conductive layer 140-4, and an electrode 152. The first conductive layer 130 is a portion of the first surface 110 </ b> A in the base layer 120 and is in contact with at least an end portion on the hole 116 side. Since the electrode substrate 100-4 has the first conductive layer 130, a state having high adhesion on the first surface side can be obtained. Therefore, even if there is no conductive layer corresponding to the second conductive layer 132, the electrode substrate 100-4 has an adhesive property. A high electrode substrate is obtained.

  DESCRIPTION OF SYMBOLS 100 ... Through electrode board, 101 ... Through electrode board, 102 ... Through electrode board, 103 ... Through electrode board, 104 ... Electrode board, 110 ... Substrate, 110A ... No. 1 surface, 110B ... 2nd surface, 115 ... through-hole, 120 ... underlayer, 130 ... 1st conductive layer, 132 ... 2nd conductive layer, 135 ... resist film, 137: Resist film, 140: Third conductive layer, 141: Third conductive layer, 150: Through electrode, 151: Through electrode, 500: Semiconductor device, 600: RF element, 610... Semiconductor element, 650... Gold bump, 700 .. wiring board, 750 .. solder bump, 800... Package substrate, 1100.

Claims (11)

In a substrate having a first surface, a second surface facing the first surface, and a through hole, a base layer containing a metal oxide is formed on an inner surface of the through hole,
A first conductive layer is formed by a sputtering method so as to be in contact with at least the end portion on the through hole side on the first surface,
Forming a second conductive layer on the second surface by a sputtering method so as to be in contact with at least the end portion on the through-hole side;
Forming a third conductive layer on the underlayer disposed on the inner surface of the through hole, on the first conductive layer and on the second conductive layer by an electroless plating method;
On the third conductive layer, a through electrode is formed by electrolytic plating so as to fill the through hole.
The manufacturing method of the penetration electrode substrate including this. The underlayer is formed by a dipping method.
The manufacturing method of the penetration electrode substrate of Claim 1. After the foundation layer is formed, heat treatment is performed at 400 ° C. or more and less than 600 ° C.,
The manufacturing method of the penetration electrode substrate of Claim 1 or Claim 2. Forming the first conductive layer and the second conductive layer includes a roughening treatment on a surface of the first conductive layer and a surface of the second conductive layer;
The manufacturing method of the penetration electrode substrate as described in any one of Claims 1 thru | or 3. A substrate having a first surface, a second surface facing the first surface, and a through hole;
An underlayer containing a metal oxide provided on the inner surface of the through hole;
A first conductive layer disposed on the first surface and in contact with an end of the through hole;
A second conductive layer disposed on the second surface and in contact with an end of the through hole;
A third conductive layer provided on the base layer, the first conductive layer, and the second conductive layer disposed on the inner surface of the through hole;
A through electrode on the third conductive layer and filled in the through hole;
A through electrode substrate. The first conductive layer is also provided on the inner surface of the through hole.
The through electrode substrate according to claim 5. The metal oxide is provided on at least one of the first surface and the second surface.
The through electrode substrate according to claim 5 or 6. The metal oxide is zinc oxide.
The through-electrode board | substrate as described in any one of Claim 5 thru | or 7. The first conductive layer, the second conductive layer, the third conductive layer, and the through electrode include copper,
The through electrode substrate according to any one of claims 5 to 8. The third conductive layer includes palladium;
The through electrode substrate according to claim 8. Including the through electrode substrate according to any one of claims 5 to 10.
Semiconductor device.

Images