JP2018113462A - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP2018113462A JP2018113462A JP2018041780A JP2018041780A JP2018113462A JP 2018113462 A JP2018113462 A JP 2018113462A JP 2018041780 A JP2018041780 A JP 2018041780A JP 2018041780 A JP2018041780 A JP 2018041780A JP 2018113462 A JP2018113462 A JP 2018113462A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
図4は、電極が形成された太陽電池素子70を示す図である。ベース基板12は、結晶質の半導体材料であり、例えば、シリコン、多結晶シリコン、砒化ガリウム(GaAs)、インジウム燐(InP)等の半導体基板である。なお、本実施形態では、ベース基板12として単結晶シリコン基板を用いた例を示す。したがって、後述する第1のi型層14、第1導電型層16、第2のi型層24、第2導電型層26もシリコン層とする。ただし、ベース基板12をシリコン以外の材料としてもよく、これらの層もシリコン層以外の材料としてもよい。
第2の実施形態に係る太陽電池モジュール100は、図1に示す第1の実施形態と同様の構造を有するが、光拡散部60をスクリーン印刷により形成する点が異なる。以下、第1の実施形態との相違点を中心に説明する。
図14は、第3の実施形態に係る太陽電池素子70を示す図である。第3の実施形態に係る太陽電池モジュールは、図1に示す第1の実施形態と同様の構造を有するが、光拡散部60の短手方向の幅w1〜w4が、バスバー電極22の配置や太陽電池素子70を構成する発電層の構造に応じて異なる点で相違する。また、本実施形態では、有効領域C2のうち外周領域C1に隣接する境界領域C3にも光拡散部60を設ける。光拡散部60に入射して拡散された光は、主に境界領域C3のすぐ内側にある隣接領域C4に入射し発電に寄与することとなる。以下、第1の実施形態との相違点を中心に説明する。
図30は、第4の実施形態に係る太陽電池素子170を示す断面図である。太陽電池素子170は、受光面170aにレーザ照射して形成される溝118により、無効領域C1と有効領域C2が分離されるレーザアイソレーション型の太陽電池素子である。太陽電池素子170は、ベース基板112と、第1導電型領域114と、第2導電型領域116と、第1電極120と、第2電極130と、を備える。
図31は、第5の実施形態に係る太陽電池素子270の構造を示す断面図である。太陽電池素子270は、受光面270aに電極が設けられず、裏面270bに第1電極214および第2電極215が設けられる裏面接合型の太陽電池素子である。以下、太陽電池素子270について上述の実施形態との相違点を中心に示す。
Claims (4)
- 太陽電池素子と、
前記太陽電池素子の受光面と背向する裏面側に設けられる封止材と、
前記太陽電池素子と前記封止材との間に設けられる光拡散部と、を備える太陽電池モジュール。 - 前記光拡散部の表面は、複数の凹部と凸部を有する凹凸構造が設けられる、請求項1に記載の太陽電池モジュール。
- 前記光拡散部は、白色材料を有する、請求項1または2に記載の太陽電池モジュール。
- 前記太陽電池素子は、裏面接合型である、請求項1から3のいずれか一項に記載の太陽電池モジュール。
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013035820 | 2013-02-26 | ||
| JP2013035820 | 2013-02-26 | ||
| JP2013203616 | 2013-09-30 | ||
| JP2013203616 | 2013-09-30 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015502585A Division JP6311999B2 (ja) | 2013-02-26 | 2013-12-03 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018113462A true JP2018113462A (ja) | 2018-07-19 |
| JP6697693B2 JP6697693B2 (ja) | 2020-05-27 |
Family
ID=51427617
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015502585A Expired - Fee Related JP6311999B2 (ja) | 2013-02-26 | 2013-12-03 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
| JP2018041780A Expired - Fee Related JP6697693B2 (ja) | 2013-02-26 | 2018-03-08 | 太陽電池モジュール |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015502585A Expired - Fee Related JP6311999B2 (ja) | 2013-02-26 | 2013-12-03 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10840393B2 (ja) |
| JP (2) | JP6311999B2 (ja) |
| DE (1) | DE112013006731T5 (ja) |
| WO (1) | WO2014132312A1 (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150206789A1 (en) * | 2014-01-17 | 2015-07-23 | Nanya Technology Corporation | Method of modifying polysilicon layer through nitrogen incorporation for isolation structure |
| WO2015118838A1 (ja) * | 2014-02-06 | 2015-08-13 | パナソニックIpマネジメント株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
| WO2015118592A1 (ja) * | 2014-02-06 | 2015-08-13 | パナソニックIpマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
| CN107408597B (zh) * | 2015-03-11 | 2019-12-27 | 松下知识产权经营株式会社 | 太阳能电池组件 |
| JP6788657B2 (ja) * | 2016-03-10 | 2020-11-25 | 株式会社カネカ | 太陽電池モジュール |
| CN108886069B (zh) * | 2016-04-13 | 2022-01-14 | 株式会社钟化 | 晶体硅系太阳能电池及其制造方法、以及太阳能电池模块 |
| KR101942783B1 (ko) * | 2016-11-23 | 2019-04-17 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| EP3664155A4 (en) * | 2017-10-30 | 2020-07-08 | Kaneka Corporation | DOUBLE-SIDED ELECTRODE TYPE SOLAR CELL AND SOLAR CELL MODULE |
| CN111354808B (zh) * | 2018-12-20 | 2025-11-18 | 东君新能源有限公司 | 一种太阳能芯片及其制备方法 |
| JP7682164B2 (ja) * | 2020-03-30 | 2025-05-23 | 株式会社カネカ | セル集合体、セル集合体の製造方法、太陽電池セル、及び、太陽電池セルの製造方法 |
| WO2024156937A1 (en) * | 2023-01-24 | 2024-08-02 | Ics Intelligent Control Systems Ltd Oy | An optical structure for enhancing the efficiency of a solar cell |
| CN116613224B (zh) * | 2023-07-20 | 2023-09-29 | 天合光能股份有限公司 | 太阳能电池及其制作方法、光伏组件及光伏系统 |
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| JPH11298029A (ja) * | 1998-04-14 | 1999-10-29 | Sanyo Electric Co Ltd | 太陽電池モジュール及び複層ガラスモジュール |
| JP2006286820A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 光起電力装置 |
| JP2009147363A (ja) * | 2009-02-19 | 2009-07-02 | Sanyo Electric Co Ltd | 太陽電池モジュール |
| JP2010258043A (ja) * | 2009-04-21 | 2010-11-11 | Sanyo Electric Co Ltd | 太陽電池 |
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2013
- 2013-12-03 WO PCT/JP2013/007088 patent/WO2014132312A1/ja not_active Ceased
- 2013-12-03 DE DE112013006731.5T patent/DE112013006731T5/de not_active Ceased
- 2013-12-03 JP JP2015502585A patent/JP6311999B2/ja not_active Expired - Fee Related
-
2015
- 2015-08-24 US US14/834,215 patent/US10840393B2/en not_active Expired - Fee Related
-
2018
- 2018-03-08 JP JP2018041780A patent/JP6697693B2/ja not_active Expired - Fee Related
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| JPH11298029A (ja) * | 1998-04-14 | 1999-10-29 | Sanyo Electric Co Ltd | 太陽電池モジュール及び複層ガラスモジュール |
| JP2006286820A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 光起電力装置 |
| US20110247692A1 (en) * | 2008-12-26 | 2011-10-13 | Tae Hoon Kim | Thin Film Type Solar Cell and Method for Manufacturing the Same |
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| JP2012238785A (ja) * | 2011-05-13 | 2012-12-06 | Nippon Telegr & Teleph Corp <Ntt> | 太陽電池およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6311999B2 (ja) | 2018-04-18 |
| DE112013006731T5 (de) | 2015-11-12 |
| JP6697693B2 (ja) | 2020-05-27 |
| JPWO2014132312A1 (ja) | 2017-02-02 |
| US20150364616A1 (en) | 2015-12-17 |
| US10840393B2 (en) | 2020-11-17 |
| WO2014132312A1 (ja) | 2014-09-04 |
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