JP2018195658A - Semiconductor light-emitting device - Google Patents

Abstract

To provide a semiconductor light-emitting device which can prevent a short circuit of a circuit while reducing a stress applied to a bonding wire owing to the thermal expansion and thermal shrinkage of a resin.SOLUTION: A semiconductor light-emitting device comprises: a substrate; a light-emitting element 20 put on a principal face of the substrate; a bonding wire W2 for electrically connecting the light-emitting element and the substrate; and a sealing part 41 in which the bonding wire is sealed by a resin. The light-emitting element has an element-side connecting end P4 provided thereon and connected with the other end of the bonding wire. The bonding wire has: a first extension part E1 having an end connected to the element-side connecting end, and extending in a direction of being distant from the element-side connecting end; a mid part M connecting to the first extension part; and a second extension part E2 connecting to the mid part and extending therefrom, and having an end connected to a substrate-side connecting end. The mid part has a stress-relaxation part 50 where the bonding wire extends at an angle of 45-90 degrees to a direction of being distant from a side face of the light-emitting element, which is in parallel with a principal face of the substrate.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a semiconductor light emitting device.

  A semiconductor light emitting device equipped with a light emitting element such as an LED (Light Emitting Diode) is used for illumination or the like. In such a semiconductor light emitting device, after the light emitting element is mounted on the substrate, it is electrically connected to the substrate by a bonding wire and sealed with resin.

  The resin used for sealing repeats thermal expansion and thermal contraction according to the usage environment. For this reason, the bonding wire repeatedly expands and contracts due to the effects of thermal expansion and contraction of the resin. Repeated expansion and contraction of the bonding wire causes disconnection.

  As a semiconductor light-emitting device that suppresses the effects of such thermal expansion and contraction of resin, for example, a light-emitting element and a substrate are electrically connected by a thin metal wire, and the light-emitting element and the thin metal wire are sealed by a sealing portion. In a resin-sealed light-emitting device, Patent Document 1 discloses a light-emitting device in which the thin metal wires are wired along the surfaces of the light-emitting element and the substrate, respectively.

JP 2013-149927 A

  In the light-emitting device of Patent Document 1, the thin metal wires are provided with almost no space between the light-emitting element and the substrate. In particular, as described in claim 2 of the document, the distance between the fine metal wire, the substrate, and the light emitting element is not more than three times the diameter of the fine metal wire.

  As described above, when the fine metal wires are provided without having a separation distance between the substrate and the like, the fine metal wires may come into contact with the light emitting element or the like with a slight impact, and the circuit may be short-circuited.

  The present invention has been made in view of the above problems, and provides a semiconductor light emitting device capable of preventing a short circuit of a circuit while reducing a stress applied to a bonding wire due to thermal expansion and contraction of a resin. Objective.

  In order to achieve the above-described object, a semiconductor light-emitting device of the present invention includes a substrate, a light-emitting element placed on the main surface of the substrate, and a bonding wire that electrically connects the light-emitting element and the substrate. And a sealing portion in which the bonding wire is sealed with resin so as to cover at least the entire bonding wire, the substrate is provided on the main surface, and one end of the bonding wire is connected The light emitting element is provided on the light emitting element and has an element side connecting end to which the other end of the bonding wire is connected. A first extension portion connected to the element side connection end and extending away from the element side connection end; an intermediate portion following the first extension portion; and an extension portion following the intermediate portion; The group A second extending portion connected to a side connection end, and the intermediate portion is a direction in which the bonding wire is parallel to the main surface of the substrate and away from the side surface of the light emitting element. It has the stress relaxation part extended at an angle of 45-90 degree | times with respect to this.

  The semiconductor light-emitting device of the present invention includes a first substrate, a second substrate placed in a recess formed on the main surface of the first substrate, and a main surface of the second substrate. The bonding wire is sealed with a resin so as to cover at least the entire bonding wire, the light emitting element mounted on the substrate, the bonding wire for electrically connecting the first substrate and the second substrate, and the bonding wire. The first substrate is provided on the first substrate, has a first substrate side connection end to which one end of the bonding wire is connected, and the first substrate The second substrate is provided on the main surface of the second substrate, and has a second substrate-side connection end to which the other end of the bonding wire is connected. 2 is connected to the board side connection end of the second board side connection. A first extension portion extending in a direction away from the end, an intermediate portion following the first extension portion, an extension following the intermediate portion, and the end portion being connected to the first substrate side connection end A second extension part, and the intermediate part has a stress relaxation part extending at an angle of 45 to 90 degrees with respect to a direction parallel to the main surface of the first substrate. To do.

  The semiconductor light-emitting device of the present invention includes a support substrate, a first substrate placed on the main surface of the support substrate, and a second substrate placed on the main surface of the support substrate; The light emitting element mounted on the main surface of the second substrate, the bonding wire for electrically connecting the first substrate and the second substrate, and at least the entire bonding wire are covered. The first substrate is provided on the first substrate, and one end of the bonding wire is connected to the first substrate. Side connection ends, and the second substrate has a second substrate side connection end provided on the main surface of the second substrate and connected to the other end of the bonding wire, The bonding wire has an end connected to the second substrate side connection end. A first extending portion extending in a direction away from the second substrate-side connection end, an intermediate portion continuing from the extending portion, and extending following the intermediate portion, and an end portion extending from the second substrate side A second extension part connected to the connection end, and the intermediate part has a stress relaxation part that extends at an angle of 45 to 90 degrees with respect to a direction parallel to the main surface of the support substrate. It is characterized by that.

1 is a top view of a semiconductor light emitting device according to Example 1. FIG. It is an expanded sectional view of the AA line of FIG. It is an expanded sectional view of the AA line of FIG. It is an expanded sectional view of the AA line of FIG. It is an expanded sectional view of the AA line of FIG. It is an expanded sectional view of the AA line of FIG. It is an expanded sectional view of the AA line of FIG. It is an expanded sectional view of the AA line of FIG. It is an expanded sectional view of the AA line of FIG. 6 is an enlarged cross-sectional view of a semiconductor light emitting device according to Example 2. FIG.

  Hereinafter, preferred embodiments of the present invention will be described in detail. In the following description and the accompanying drawings, substantially the same or equivalent parts are denoted by the same reference numerals.

  As shown in FIGS. 1 to 3, the semiconductor light emitting device 10 includes a base substrate 11 (first substrate) and a submount substrate 13 (second substrate) placed on the main surface 11 a of the base substrate 11. And the light emitting element 20 mounted on the main surface 13 a of the submount substrate 13.

  The base substrate 11 is made of a material having high thermal conductivity, for example, a metal material such as Cu. An insulating layer (not shown) made of an insulating material is formed on the base substrate 11.

  On this insulating layer, a wiring T1 connected to a connection terminal (not shown) to the outside (for example, a power supply circuit or a drive circuit) and a pad electrode P1 connected to the wiring T1 (first substrate side connection end) Is provided. For the wiring T1 and the pad electrode P1, for example, a metal such as Au or Cu can be used. Other wiring and other electrodes described later are also made of the same material.

  On the main surface 11a of the base substrate 11, a first surrounding portion FL1 formed in an annular shape so as to surround the entire submount substrate 13 and the pad electrode P1 is provided.

  The base substrate 11 is not limited to being made of a metal material, and may be made of, for example, an insulating material. In this case, it is not necessary to provide an insulating layer, and the wiring T1 and the pad electrode P1 may be formed on the base substrate 11.

  On the main surface 11 a of the base substrate 11, a concave portion 14 provided for mounting the submount substrate 13 is formed.

  The recess 14 is formed in a substantially U shape in cross section. A submount substrate 13 is fixed to the bottom surface of the recess 14 via an adhesive layer (not shown).

  The submount substrate 13 can be made of a material having high thermal conductivity, such as ceramics.

  On the main surface 13a of the submount substrate 13, a pad electrode P2 (second substrate side connection end) and a pad electrode P3 (light emitting element side connection end as a substrate side connection end) are provided. On the main surface 13a of the submount substrate 13, a second surrounding portion FL2 formed in an annular shape so as to surround the entire light emitting element 20, the pad electrode P3, and a pad electrode P4 described later is provided. ing. The pad electrode P2 and the pad electrode P3 are electrically connected to each other via the wiring T2.

  The tip of the bonding wire W1 is connected to the pad electrode P1 of the base substrate 11, and the base end of the pad electrode P2 bonding wire W1 of the submount substrate 13 is connected, so that the pad electrode P1 and the pad electrode P2 are electrically connected to each other. It is connected to the.

  The light emitting element 20 is mounted on the main surface 13 a of the submount substrate 13. For example, a light emitting diode or a semiconductor laser can be used as the light emitting element 20.

  The light emitting element 20 includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are sequentially stacked. The n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer are made of, for example, a nitride-based semiconductor.

  Therefore, the upper surface of the p-type semiconductor layer of the light emitting element 20 functions as a light extraction surface of the light emitting element 20.

  On the main surface 20a of the light emitting element 20, pad electrodes P4 (element side connection ends) connected to the n-type semiconductor layer and the p-type semiconductor layer are provided.

  Since the tip end of the bonding wire W2 is connected to the pad electrode P4 of the light emitting element 20, and the base end of the bonding wire W2 is connected to the pad electrode P3 of the submount substrate 13, the pad electrode P3 and the pad electrode P4 are mutually connected. Electrically connected.

  A wavelength conversion plate 30 may be provided on the main surface 13a of the light emitting element 20 for the light emitted from the light emitting element 20. In this case, the wavelength conversion plate 30 is formed on the light extraction surface of the light emitting element 20.

  The wavelength conversion plate 30 includes, for example, a plate-like member including phosphor particles and a binder (not shown), or a single crystal phosphor plate.

  Between the first enclosure part FL1 and the second enclosure part FL2, a first sealing part 40 in which the bonding wire is sealed with resin is provided so as to cover the entire bonding wire W1. For example, a silicone resin can be used as the resin.

  The first sealing portion 40 has a monotonous convex shape in a plane perpendicular to the base substrate 11. More specifically, this convex shape is formed to be curved so as to draw an arc with respect to the light extraction direction of the light emitting element 20, for example.

  Between the side surface of the wavelength conversion plate 30 and the second enclosure portion FL2, a second sealing portion 41 is provided by sealing the bonding wire W2 with resin so as to cover the entire bonding wire W2.

  The second sealing portion 41 has a monotonous convex shape in a plane perpendicular to the submount substrate 13. More specifically, this convex shape is formed to be curved so as to draw an arc with respect to the light extraction direction of the light emitting element 20, for example. As the resin, a translucent resin such as a silicone resin can be used.

  When the wavelength conversion plate 30 is not provided, the second sealing portion 41 is provided so as to cover the entire bonding wire W2 inside the second enclosure portion FL2.

  4 shows a direction in which the resin of the first sealing portion 40 expands or contracts due to a temperature change in the AA line enlarged cross-sectional view of FIG. 1 shown in FIG. FIG. 5 shows a direction in which the resin of the second sealing portion 41 expands or contracts due to a temperature change in the AA line enlarged cross-sectional view of FIG. 1 shown in FIG.

  The bonding wires W1 and W2 are made of a material such as Au, Al, or Cu, for example.

  The bonding wire W1 has an end connected to the pad electrode P2, a first extending part E1 extending in a direction away from the pad electrode P2, an intermediate part M following the first extending part E1, and an intermediate part A second extending portion E2 extending after M and having an end portion connected to the pad electrode P1 is configured.

  The first extending portion E1 of the bonding wire W1 extends substantially parallel to the main surface 11a of the base substrate 11, and the transition portion S that is the portion of the bonding wire W1 where the first extending portion E1 moves to the intermediate portion is curved. Is formed. The second extending portion E2 may include a wire portion E2a extending from the pad electrode P1 in a direction perpendicular to the main surface 13a of the submount substrate 13. Similarly, the first extending portion E1 may have a wire portion E1a extending from the pad electrode P2 in a direction perpendicular to the main surface 13a of the submount substrate 13. The second extending portion E2 of the bonding wire W1 is curved.

  A thick arrow shown in FIG. 4 indicates a direction in which the resin of the first sealing portion 40 expands and contracts due to a temperature change. Thus, the force acting in the expansion or contraction direction of the first sealing portion 40 acts on the bonding wire W1 at an angle of approximately 90 degrees with respect to the direction α parallel to the main surface 11a of the base substrate 11. To do.

  On the other hand, the intermediate part M of the bonding wire W1 extends at an angle (θ1) (45 ° ≦ θ1 ≦ 90 °) of 45 to 90 degrees with respect to the direction α parallel to the main surface 11a of the base substrate 11. A stress relieving part 50 is provided. In this embodiment, θ1 is 90 °.

  The bonding wire W2 has an end connected to the pad electrode P4, a first extension E1 extending in a direction away from the pad electrode P4, an intermediate M following the first extension E1, and an intermediate M Subsequently, a second extending portion E2 that extends and is connected to the pad electrode P3 is provided.

  The first extending portion E1 of the bonding wire W2 extends substantially parallel to the main surface 13a of the submount substrate 13, and the transition portion S that is the portion of the bonding wire W2 where the first extending portion E1 moves to the intermediate portion is It is curved. The second extending portion E2 may include a wire portion E2a extending from the pad electrode P3 in a direction perpendicular to the main surface 13a of the submount substrate 13. Similarly, the first extending portion E1 may include a wire portion E1a extending from the pad electrode P4 in a direction perpendicular to the main surface 20a of the light emitting element 10. The second elongated portion E2 of the bonding wire W2 is curved.

  In addition, a thick arrow shown in FIG. 5 indicates a direction in which the resin of the second sealing portion 41 expands and contracts due to a temperature change. Thus, the force acting in the expansion or contraction direction of the second sealing portion 41 acts on the bonding wire W2 at an angle of approximately 45 degrees with respect to the direction parallel to the main surface 13a of the submount substrate 13. To do.

  On the other hand, the intermediate portion M of the bonding wire W2 is a direction parallel to the main surface 13a of the submount substrate 13 and an angle of 45 to 90 degrees with respect to the direction β away from the side surface 21 of the light emitting element 20 ( It has the stress relaxation part 50 extended | stretched by (theta2) (45 degrees <= theta2 <= 90 degrees). In this embodiment, θ2 is 90 °.

  That is, the stress relieving part 50 is formed to have a forming angle of approximately parallel to 45 degrees with respect to the direction of the force acting in the expansion or contraction direction generated in the resin due to the thermal expansion or contraction of the resin. .

  Therefore, the stress relaxation part 50 can raise the resistance with respect to the force which acts on the expansion or contraction direction of the resin which the bonding wires W1 and W2 receive by extending long with respect to the expansion or contraction direction of the resin. For this reason, it becomes possible to prevent disconnection of the bonding wires W1, W2.

  Moreover, since the stress relaxation part 50 is provided, the total length of the bonding wires W1, W2 becomes longer than the distance between the pad electrodes P1, P2 and the pad electrodes P3, P4 (the bonding wires W1, W2 are loosened). The tension of the bonding wires W1 and W2 generated by the force acting in the direction of resin expansion or contraction can be reduced.

  Further, since the transition part S and the second extension part E2 of the bonding wires W1 and W2 are formed to be curved, the transition part S and the second extension part E2 act as if they are springs, and the resin. The force acting in the expansion or contraction direction can be absorbed, and disconnection of the bonding wires W1 and W2 can be prevented.

  Further, the bonding wire W1 includes a wire portion E1a extending from the pad electrode P2 in a direction perpendicular to the main surface 13a of the submount substrate 13 and a wire extending from the pad electrode P1 in a direction perpendicular to the main surface 13a of the submount substrate 13. By providing the portion E <b> 2 a, a clearance can be provided for the submount substrate 13 and the base substrate 11.

  As described above, the bonding wire W1 is provided with a clearance between the submount substrate 13 and the base substrate 11, so that the bonding wire W1 contacts the submount substrate 13 or the submount substrate 13 and the circuit is short-circuited. A malfunction can be prevented.

  Similarly, the bonding wire W2 includes a wire portion E2a extending from the pad electrode P3 in a direction perpendicular to the main surface 13a of the submount substrate 13, and a wire extending from the pad electrode P4 in a direction perpendicular to the main surface 20a of the light emitting element 10. By providing the portion E1a, a clearance can be provided for the submount substrate 13 and the light emitting element 20.

  As described above, the bonding wire W2 is provided with a clearance between the submount substrate 13 and the light emitting element 20, so that the bonding wire W2 contacts the submount substrate 13 or the light emitting element 20 to cause a short circuit. Can be prevented.

  The amount of the clearance may be set so that the bonding wires W1 and W2 do not contact the light emitting element 20, the base substrate 11, and the submount substrate 13 by an external force such as vibration that the semiconductor light emitting device 10 receives. It may be determined in consideration of the amount of the resin used for the sealing portion 40 and the second sealing portion 41 being displaced by thermal expansion or thermal contraction, the thermal expansion coefficient, or the like.

  Here, FIG. 6 is a cross-sectional view taken along line AA of FIG. 1 showing a modification of the bonding wire W2. For example, as shown in FIG. 6, the stress relaxation portion 50 is formed with an angle of less than 90 degrees with respect to the main surface 13 a of the submount substrate 13. At this time, the transition portion S may be curved and extended toward the side surface 21 of the light emitting element 20.

  It should be noted that the bonding wires W1 and W2 are particularly affected by forces acting in the direction of thermal expansion and contraction of the resin at the thick portions of the resin of the first sealing portion 40 and the second sealing portion 41.

  Therefore, the stress relaxation part 50 is good to be provided in the area | region where the resin of the 1st sealing part 40 and the 2nd sealing part 41 is the thickest.

  Specifically, as shown in FIG. 2, the first sealing portion 40 is a region on the main surface 11 a of the base substrate 11 defined in the first sealing portion 40, and includes the base substrate 11. From the side surface of the recess 14 to the side surface of the submount substrate 13 (region R1), it is preferable that the region R2 having the largest thickness from the main surface of the base substrate 11 of the first sealing portion 40 is included.

  As described above, by providing the stress relaxation portion 50 in the region R2 where the thickness of the second sealing portion 41 from the main surface 11a of the base substrate 11 is the thickest, the bonding wire W1 can be more effectively disconnected. Can be prevented.

  Similarly, as shown in FIG. 3, the second sealing portion 41 is a region on the main surface 13 a of the submount substrate 13 defined in the second sealing portion 41, and is a region of the light emitting element 20. The region between the side surface 21 and the pad electrode P3 (region R3) may include a region R4 having the thickest thickness from the main surface of the submount substrate 13 of the second sealing portion 41.

  The intermediate part M may have a plurality of stress relaxation parts 50. Here, FIGS. 7 to 9 are cross-sectional views taken along the line AA of FIG. 1, showing modifications of the bonding wires W1 and W2.

  For example, as shown in FIGS. 7 and 8, the intermediate portion M is formed so that the side view is substantially U-shaped, and the main surface 11a of the base substrate 11 or the main surface 13a of the submount substrate 13 is formed. Alternatively, two stress relaxation portions 50 that form an angle of 90 degrees with respect to each other may be provided. Moreover, the stress relaxation part 50 is not restricted to such an aspect, For example, you may form so that a side view may become step shape (multistage shape), and you may provide in two or more places.

  Similarly, as shown in FIG. 9, the intermediate portion M is formed so that the side view has a substantially inverted U shape, and the formation direction of the main surface 11 a of the base substrate 11 or the main surface 13 a of the submount substrate 13 is formed. The stress relaxation portions 50 having an angle of 90 degrees may be provided at two locations. Moreover, the stress relaxation part 50 is not restricted to such an aspect, For example, you may form so that a side view may become step shape (multistage shape), and you may provide in two or more places.

  As described above, by providing the stress relaxation portions 50 at a plurality of locations in the intermediate portion M, the bonding wires W1 and W2 can be made more difficult to disconnect.

  In the first embodiment, the submount substrate 13 is provided on the concave portion 14 of the base substrate 11. However, the base substrate 11 and the submount substrate 13 may be provided on the support substrate 15.

  FIG. 10 is a cross-sectional view of the semiconductor light emitting device 10 showing a modification of the bonding wire W2 according to the second embodiment.

  Specifically, as shown in FIG. 10, the semiconductor light emitting device includes a support substrate 15, a base substrate 11 placed on the main surface 15 a of the support substrate 15, and a main surface 11 a of the base substrate 11. The light emitting element 20 is mounted, and the submount substrate 13 is mounted on the support substrate 15. Other configurations are the same as those of the first embodiment, and thus the description thereof is omitted.

  When the semiconductor light emitting device 10 is configured as described above, the first sealing portion inside 40 is a region on the main surface 15a of the support substrate 15 defined by the first sealing portion 40, and has a base. A region (R5) between the side surface of the substrate 11 and the side surface of the submount substrate 13 may include a region R6 having the thickest thickness from the main surface 15a of the support substrate 15.

10 Semiconductor Light Emitting Device 11 Base Substrate (First Substrate)
11a Main surface 13 of base substrate Submount substrate (second substrate)
13a Main surface 14 of submount substrate Recess 15 Support substrate 20 Light emitting element 21 Side surface 40 of light emitting element First sealing portion 41 Second sealing portion 50 Stress relaxation portions W1, W2 Bonding wire E1 First extension portion E1a Wire portion E2 of the first extension portion Second extension portion M Intermediate portion S Transition portion P1 Pad electrode (first substrate side connection end)
P2 pad electrode (second substrate side connection end)
P3 pad electrode (light emitting element side connection end as substrate side connection end)
P4 Pad electrode (element side connection end)
α Direction parallel to the main surface of the base substrate β Direction parallel to the main surface of the submount substrate and away from the side surface of the light emitting element

Claims (18)

A substrate, a light emitting element placed on the main surface of the substrate, a bonding wire for electrically connecting the light emitting element and the substrate, and the bonding wire so as to cover at least the entire bonding wire A sealing portion sealed with a resin,
The substrate is provided on the main surface and has a substrate side connection end to which one end of the bonding wire is connected;
The light emitting element is provided on the light emitting element, and has an element side connection end to which the other end of the bonding wire is connected,
The bonding wire has an end portion connected to the element side connection end and extending in a direction away from the element side connection end, an intermediate portion following the first extension portion, and the intermediate portion And a second extension part, the end part of which is connected to the board-side connection end.
The intermediate portion has a stress relaxation portion in which the bonding wire extends at an angle of 45 to 90 degrees with respect to a direction parallel to the main surface of the substrate and away from the side surface of the light emitting element. A semiconductor light-emitting device.   The sealing portion has a monotonous convex shape in a plane perpendicular to the substrate, and is a region on the main surface of the substrate defined in the sealing portion, and is formed from a side surface of the light emitting element. 2. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device includes a region having a thickest thickness from the main surface of the substrate between the substrate-side connection ends. The first extending portion extends substantially parallel to the main surface of the substrate,
3. The semiconductor light emitting device according to claim 1, wherein a transition portion that is a portion of the bonding wire in which the first extension portion transitions to the intermediate portion is formed to be curved.   4. The semiconductor light emitting device according to claim 1, wherein the second extending portion is formed to be curved.   5. The semiconductor light emitting device according to claim 1, wherein the second extending portion includes a wire portion extending in a direction perpendicular to the main surface of the substrate from the substrate-side connection end. .   The semiconductor light emitting device according to claim 1, wherein the intermediate portion includes a plurality of the stress relaxation portions. A first substrate; a second substrate placed in a recess formed on the main surface of the first substrate; and a light emitting element placed on the main surface of the second substrate. A bonding wire that electrically connects the first substrate and the second substrate, and a sealing portion that seals the bonding wire with resin so as to cover at least the entire bonding wire. Have
The first substrate is provided on the first substrate and has a first substrate side connection end to which one end of the bonding wire is connected;
The second substrate is provided on the main surface of the second substrate, and has a second substrate side connection end to which the other end of the bonding wire is connected,
The bonding wire has an end portion connected to the second substrate side connection end, and a first extension portion extending in a direction away from the second substrate side connection end, and an intermediate portion following the first extension portion. And a second extension portion that extends following the intermediate portion and whose end portion is connected to the first substrate-side connection end,
The semiconductor light emitting device according to claim 1, wherein the intermediate portion includes a stress relaxation portion that extends at an angle of 45 to 90 degrees with respect to a direction parallel to the main surface of the first substrate.   The sealing portion has a monotonous convex shape on a surface perpendicular to the first substrate, and is a region on the main surface of the first substrate defined in the sealing portion, 8. The semiconductor light emitting device according to claim 7, comprising a region between the side surface of the concave portion of the first substrate and the side surface of the second substrate that is thickest from the main surface of the substrate. 9. apparatus. The first extending portion extends substantially parallel to the main surface of the first substrate,
9. The semiconductor light emitting device according to claim 7, wherein a transition portion that is a portion of the bonding wire in which the first extending portion transitions to the first intermediate portion is formed to be curved.   The semiconductor light emitting device according to claim 7, wherein the second extending portion is formed to be curved.   The said 1st extending | stretching part has a wire part extended in the direction perpendicular | vertical to the said main surface of the said 2nd board | substrate from the said 2nd board | substrate side connection end, The one of Claim 7 thru | or 10 characterized by the above-mentioned. The semiconductor light-emitting device described in 1.   The semiconductor light emitting device according to claim 7, wherein the intermediate portion includes a plurality of the stress relaxation portions. A support substrate, a first substrate placed on the main surface of the support substrate, a second substrate placed on the main surface of the support substrate, and a main substrate of the second substrate A light-emitting element placed on a surface, a bonding wire for electrically connecting the first substrate and the second substrate, and the bonding wire so as to cover at least the entire bonding wire with resin A sealing portion for sealing,
The first substrate is provided on the first substrate and has a first substrate side connection end to which one end of the bonding wire is connected;
The second substrate is provided on the main surface of the second substrate, and has a second substrate side connection end to which the other end of the bonding wire is connected,
The bonding wire has an end portion connected to the second substrate side connection end, a first extension portion extending in a direction away from the second substrate side connection end, an intermediate portion following the extension portion, A second extension part that extends following the intermediate part and whose end part is connected to the second substrate-side connection end;
The semiconductor light emitting device according to claim 1, wherein the intermediate portion includes a stress relaxation portion that extends at an angle of 45 to 90 degrees with respect to a direction parallel to the main surface of the support substrate.   The sealing portion has a monotonous convex shape on a surface perpendicular to the first support substrate, and is a region on the main surface of the support substrate defined in the sealing portion, The semiconductor light emitting device according to claim 13, further comprising a region between the side surface of the substrate and the side surface of the second substrate that is thickest from the main surface of the support substrate. The first extending portion extends substantially parallel to the main surface of the support substrate,
15. The semiconductor light emitting device according to claim 13, wherein a transition portion that is a portion of the bonding wire where the first extension portion transitions to the intermediate portion is curved.   The semiconductor light emitting device according to claim 13, wherein the second extending portion is formed to be curved.   17. The first extending portion has a wire portion extending from the second substrate side connection end in a direction perpendicular to the main surface of the second substrate. The semiconductor light-emitting device described in 1.   The semiconductor light emitting device according to claim 13, wherein the intermediate portion includes a plurality of the stress relaxation portions.

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