JP2018170468A - 縦型熱処理装置 - Google Patents

縦型熱処理装置 Download PDF

Info

Publication number: JP2018170468A
Authority: JP; Japan
Prior art keywords: particles; wafer; gas; heat treatment; reaction vessel
Prior art date: 2017-03-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Ceased

Application number

JP2017068466A

Other languages

English (en)

Japanese (ja)

Inventor

純和古澤

Sumikazu Furusawa

純和古澤

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Electron Ltd

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-03-30

Filing date

2017-03-30

Publication date

2018-11-01

2017-03-30 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2017-03-30 Priority to JP2017068466A priority Critical patent/JP2018170468A/ja

2018-03-20 Priority to TW107109360A priority patent/TWI723254B/zh

2018-03-27 Priority to KR1020180034891A priority patent/KR102233248B1/ko

2018-03-28 Priority to CN201810265221.XA priority patent/CN108695200B/zh

2018-11-01 Publication of JP2018170468A publication Critical patent/JP2018170468A/ja

Status Ceased legal-status Critical Current

Images

Classifications

- H10P72/0431—
- H10P72/0402—

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical Vapour Deposition (AREA)

JP2017068466A 2017-03-30 2017-03-30 縦型熱処理装置 Ceased JP2018170468A (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP2017068466A JP2018170468A (ja)	2017-03-30	2017-03-30	縦型熱処理装置
TW107109360A TWI723254B (zh)	2017-03-30	2018-03-20	立式熱處理裝置
KR1020180034891A KR102233248B1 (ko)	2017-03-30	2018-03-27	종형 열처리 장치
CN201810265221.XA CN108695200B (zh)	2017-03-30	2018-03-28	立式热处理装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2017068466A JP2018170468A (ja)	2017-03-30	2017-03-30	縦型熱処理装置

Publications (1)

Publication Number	Publication Date
JP2018170468A true JP2018170468A (ja)	2018-11-01

Family

ID=63844615

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2017068466A Ceased JP2018170468A (ja)	2017-03-30	2017-03-30	縦型熱処理装置

Country Status (4)

Country	Link
JP (1)	JP2018170468A (zh)
KR (1)	KR102233248B1 (zh)
CN (1)	CN108695200B (zh)
TW (1)	TWI723254B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN112414107B (zh) *	2020-11-04	2023-01-17	北京北方华创微电子装备有限公司	立式热处理设备及其炉体装卸方法和转运装置
KR20240037956A (ko) *	2021-08-25	2024-03-22	가부시키가이샤 코쿠사이 엘렉트릭	기판 지지구, 기판 처리 장치 및 반도체 장치의 제조 방법

Citations (8)

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JP2001291708A (ja) *	2000-03-17	2001-10-19	Samsung Electronics Co Ltd	スリット型工程ガス引込み部と多孔構造の廃ガス排出部とを含む工程チューブ及び半導体素子の製造装置
JP2002016043A (ja) *	2000-06-27	2002-01-18	Sony Corp	プラズマ装置およびその陰電極
JP2009064873A (ja) *	2007-09-05	2009-03-26	Hitachi High-Technologies Corp	半導体製造装置における被処理体の搬送方法
JP2010013709A (ja) *	2008-07-04	2010-01-21	Fujitsu Ltd	成膜装置及び成膜方法
JP4861391B2 (ja) *	2008-11-25	2012-01-25	株式会社日立国際電気	基板処理装置および半導体装置の製造方法
JP2012186483A (ja) *	2005-03-02	2012-09-27	Tokyo Electron Ltd	排気ポンプ
JP2013157491A (ja) *	2012-01-31	2013-08-15	Tokyo Electron Ltd	成膜装置
JP2015106619A (ja) *	2013-11-29	2015-06-08	三菱電機株式会社	拡散装置および拡散方法

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KR0133677B1 (ko) *	1987-11-20	1998-04-23	후세 노보루	열처리장치
SG71808A1 (en) *	1997-07-04	2000-04-18	Tokyo Electron Ltd	Centrifugal coating apparatus with detachable outer cup
TWI229899B (en) *	2003-10-01	2005-03-21	Topco Scient Co Ltd	Wafer shielding device
US7927066B2 (en) *	2005-03-02	2011-04-19	Tokyo Electron Limited	Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component
JP2007019174A (ja) *	2005-07-06	2007-01-25	Matsushita Electric Ind Co Ltd	プラズマエッチング装置
JP5028957B2 (ja) *	2005-12-28	2012-09-19	東京エレクトロン株式会社	成膜方法及び成膜装置並びに記憶媒体
JP4994724B2 (ja) *	2006-07-07	2012-08-08	株式会社東芝	成膜装置及び成膜方法
US8380360B2 (en) *	2007-10-19	2013-02-19	Hitachi Kokusai Electric Inc.	Temperature control method, method of obtaining a temperature correction value, method of manufacturing a semiconductor device and substrate treatment apparatus
US8520360B2 (en) *	2011-07-19	2013-08-27	Lam Research Corporation	Electrostatic chuck with wafer backside plasma assisted dechuck
JP5741315B2 (ja) *	2011-08-16	2015-07-01	東京エレクトロン株式会社	膜割れ検出装置及び成膜装置
JP6307984B2 (ja) *	2014-03-31	2018-04-11	東京エレクトロン株式会社	基板処理装置
JP6435967B2 (ja) *	2015-03-31	2018-12-12	東京エレクトロン株式会社	縦型熱処理装置

2017
- 2017-03-30 JP JP2017068466A patent/JP2018170468A/ja not_active Ceased
2018
- 2018-03-20 TW TW107109360A patent/TWI723254B/zh active
- 2018-03-27 KR KR1020180034891A patent/KR102233248B1/ko active Active
- 2018-03-28 CN CN201810265221.XA patent/CN108695200B/zh active Active

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2001291708A (ja) *	2000-03-17	2001-10-19	Samsung Electronics Co Ltd	スリット型工程ガス引込み部と多孔構造の廃ガス排出部とを含む工程チューブ及び半導体素子の製造装置
JP2002016043A (ja) *	2000-06-27	2002-01-18	Sony Corp	プラズマ装置およびその陰電極
JP2012186483A (ja) *	2005-03-02	2012-09-27	Tokyo Electron Ltd	排気ポンプ
JP2009064873A (ja) *	2007-09-05	2009-03-26	Hitachi High-Technologies Corp	半導体製造装置における被処理体の搬送方法
JP2010013709A (ja) *	2008-07-04	2010-01-21	Fujitsu Ltd	成膜装置及び成膜方法
JP4861391B2 (ja) *	2008-11-25	2012-01-25	株式会社日立国際電気	基板処理装置および半導体装置の製造方法
JP2013157491A (ja) *	2012-01-31	2013-08-15	Tokyo Electron Ltd	成膜装置
JP2015106619A (ja) *	2013-11-29	2015-06-08	三菱電機株式会社	拡散装置および拡散方法

Also Published As

Publication number	Publication date
TWI723254B (zh)	2021-04-01
TW201901807A (zh)	2019-01-01
CN108695200A (zh)	2018-10-23
KR102233248B1 (ko)	2021-03-26
KR20180111565A (ko)	2018-10-11
CN108695200B (zh)	2023-06-09

Publication	Publication Date	Title
JP6505253B2 (ja)	2019-04-24	基板洗浄装置
KR100856654B1 (ko)	2008-09-04	플라즈마 처리 장치
KR102027725B1 (ko)	2019-10-01	기판 처리 장치 및 기판 처리 방법
JP5658928B2 (ja)	2015-01-28	多室型熱処理装置
JP2012533876A (ja)	2012-12-27	半導体製造装置
KR101485580B1 (ko)	2015-01-22	원자층 증착 장치
JP2018170468A (ja)	2018-11-01	縦型熱処理装置
TWI810659B (zh)	2023-08-01	氣化系統，基板處理裝置及半導體裝置的製造方法
JP5728772B2 (ja)	2015-06-03	原料ガス発生装置
JP2009302353A (ja)	2009-12-24	半導体製造装置
KR20150077107A (ko)	2015-07-07	화학기상증착장치
CN221176149U (zh)	2024-06-18	一种刻蚀设备
JP6832786B2 (ja)	2021-02-24	掃気ノズル及びこれを用いた基板処理装置、並びにパーティクル除去方法
JPH10223538A (ja)	1998-08-21	縦型熱処理装置
KR20190001931A (ko)	2019-01-07	클리닝 노즐을 구비한 덮개, 열처리 장치 및 열처리 장치용 덮개의 클리닝 방법
TWI754371B (zh)	2022-02-01	負載鎖定裝置
TWI890098B (zh)	2025-07-11	基板處理裝置
JP2020002438A (ja)	2020-01-09	成膜装置および成膜方法、クリーニング方法
JP5377164B2 (ja)	2013-12-25	基板処理装置及び基板処理方法
JPH07240376A (ja)	1995-09-12	縦型気相成長装置
KR101356208B1 (ko)	2014-01-29	기판 처리 장치
KR20080037786A (ko)	2008-05-02	반도체 소자 제조용 물리기상증착장치
JP2011021264A (ja)	2011-02-03	成膜装置
JP2001284260A (ja)	2001-10-12	基板処理方法
KR19980025595U (ko)	1998-08-05	화학기상증착 장비의 반응로

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