TWI229899B - Wafer shielding device - Google Patents

Abstract

A wafer shielding device is disclosed, which comprises: a reaction chamber having the seat base to support the substrate, and opposed to the seat base to form a guiding opening for air flow; a shielding ring having a protruded ring wall extended along the upper edge on the shielding surface. The protruded ring wall is opposed to the surroundings of the guiding opening for air flow and the internal wall of the reaction chamber to form a barrier, so as to prevent the particles from direct staying on the internal wall of the reaction chamber.

Description

1229899 V. Description of the invention (1) [Creation area of the invention] The present invention is related to-a kind of wafer shielding device, especially an improved wafer shielding device used as a barrier in a potential reaction chamber (chamber) [ [Previous technology] The production of an integrated circuit is based on process steps such as continuous repetition and engraving, and a very fine circuit pattern is constructed on an original extremely flat semiconductor (Wafer). Among them, the long method mainly includes methods such as chemical vapor deposition (CfD), :: product (PJD), and the main purpose is to provide integrated circuit elements = various components such as dielectric layers, such as dielectric layers, The process steps of the film guide mainly include photoresist pattern J, such as exposure and development, to use this layer of photoresist pattern to form a mask, and the bottom of the photoresist pattern = film or wafer substrate. Etching; during the etching process, the part of the film or substrate not covered by the photoresist pattern is added to the film to form a connection on the substrate. Bao Dingfan

: In the process of film growth, because the deposition material is extremely easy to etch, the particles are separated from the substrate surface to form particles (paticles), so that the substrate X i = ΐ 生 变 # 'So how to avoid deposition on the edge of the substrate It is very important to mask it, and in order to solve the above-mentioned problem, “masking ¥ has been used as a substrate to mask the deposited material 1 for a long time. · Circumferential discharge is a schematic diagram of the configuration of shielding Xia on the substrate in a chemical vapor deposition reaction chamber. Wherein the reaction chamber 1 has a side wall

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1229899 V. Description of the invention (2) 1 1. The top wall 12 and the bottom wall 1 3 have an airflow inlet 14 at the top connected to a dispersing airflow element 1 4 1 to disperse the incoming airflow and supply it to the average. The entire reaction chamber i is provided with a platform 15 near the bottom of the reaction chamber 1. The platform 15 supports the substrate eight on the upper surface during the process, and the substrate A consists of a plurality of vacuum channels 1 5 1 It is maintained on the pedestal 15 and the pedestal 15 also includes an airflow duct 5 2. The airflow duct 1 5 2 is in fluid communication with an airflow supplier 1 5 3 and passes through an annular airflow outlet 1. 5 4 sends out the cleaning airflow, and the shielding ring 丄 6 is supported above the base 15 and is properly shielded at the edge of the substrate a to prevent the deposition air from being deposited on the edge and back of the substrate A. In theory, the The material A is appropriately placed on the base 15 so that the substrate can be evenly suspended on a part of the channel of the airflow outlet 1 5 4 to allow non-process gas to flow around the substrate A, so that the surrounding material is not Exposure to process air. However, the gas introduced by the airflow inlet 14 through the dispersing airflow element 1 41 will be shunted to both ends, and after passing through the etching process, the microparticles B will be directly retained in the inner wall of the reaction chamber 1, and the The micro-particles B also easily flow into the substrate A from the shielding ring 16 in excess, which increases the trouble of cleaning. It can be seen from this that the above existing device structure still has many defects in practice. It is not a good designer, and it needs to be improved. In view of various shortcomings derived from the above-mentioned conventional knowledge system, the inventor of this case has been eager to improve and innovate. After years of painstaking research, he has successfully completed the case.

1229899

[Summary of the Invention] The present invention is primarily to avoid the inner wall of the particles. The purpose of the invention is to provide a wafer shielding device, whose main body (pa tic 1 es) directly stays in the process reaction chamber. Another object of the present invention is to provide a wafer shielding bean which can adhere to particles (paticles). In order to effectively reduce; the introduction of a substrate, and damage to the degree of accumulation. In order to achieve the above objective, the present invention includes:

A chamber having a base supporting the base material and forming a rolling flow guide opening opposite to the base; and a shield ring having a convex ring wall extending from the upper edge of the shielding surface, the convex ring wall is f air guide Barriers are formed around the mouth and between the walls of the reaction chamber. The above structure can prevent the air flow from spreading to both sides, which causes micro particles to stay on the inner wall of the reaction chamber. A plurality of recesses are further formed on the inner edge of the above-mentioned convex ring wall, so that the fine particles can be deposited in the cavity, thereby increasing its adhesion to the convex ring wall. The above-mentioned cavity system may be semi-circular, which is relatively easy to manufacture. The above-mentioned cavity system can be a polygonal polygon, thereby increasing the connection with the particles.

[Embodiment] In order to make it easy for your reviewers to understand the content of the present invention and the effect that can be achieved, a specific embodiment is listed with the drawings, and the detailed description is as follows: II I Η 1 1 1 ί II 1 1 7 Page 1229899

The micro-drawing is related to a kind of wafer shielding device 4, which is mainly for avoidance (Γ P a 11 c 1 es) directly stays on the inner wall of the reaction chamber of the process. ^ The above reaction chamber contains a chemical vapor phase Deposition reaction chamber (C VD :), μ 'physical vapor deposition reaction chamber (PVD), or electric ore reaction chamber, or 22 for substrate processing, and need a shield to protect the part of the substrate. In order to achieve the above-mentioned object, the main components of the present invention include the second figure): (i) As a reaction chamber 2, an air flow guide 4 1 is formed on the reaction chamber table 3, and the top phase 4 system includes Airflow inlet element 4 2.

There is a seat opening 4 supporting the substrate A, and the airflow guide opening 2 communicates with an airflow dispersion

A shielding ring 5 (please refer to FIG. 3 for cooperation), which includes an upper shielding surface 5 1 and a lower substrate alignment support component 5 2, wherein the lower substrate alignment support component preferably includes one or Multiple substrate alignment support surfaces' A set of alignment feet can be placed in the reaction chamber 2 and the shielding ring 5 can be aligned to the platform 3 by adjusting it and extending on the upper edge of the shielding ring 5 There is a convex ring wall 6 'The convex ring wall 6 extends around the airflow dispersing element 4 2 covering the airflow guiding port 4, and a barrier is formed between the periphery of the airflow dispersing element 4 2 and the inner wall of the reaction chamber 2 (such as the first (As shown in the four figures), and a plurality of recesses 7 are formed in the inner edge of the convex ring wall 6. The words "bottom", "top", "upper", "lower" and other positions described herein are based on the relative positions in the embodiment shown in the figure. These relative positions will vary depending on the relative direction of the process system. Different, in addition, the word, "shielding ring" refers to a part that can cover a part of the substrate and can make the part of the substrate unaffected by the other part of the substrate during a certain process.

Page 8 1229899 V. Description of the invention (5) ίΐΛ'Λ includes m, CVD, and shielding rings used in the electric mining process, and the A-coat is a barrier, which can separate the airflow guide port of the reaction chamber and the reaction chamber. The inner wall. The above-mentioned shielding ring 5 is also located on the seat 3 of the reaction chamber 2, and its part A is partially inserted below the person 1. The base material is also called π a and w. Two: can :; support components for states, cooling elements or other substrates; and for shielding products: two or one of other suitable materials, especially covering materials with a low thermal expansion coefficient. It is made to maintain the confrontation between the toilet base; the contact edge between the base and the substrate < is made of ^ body material (the conductivity may be higher than the shielding ring), so that the base can be made of the base material (The characteristics of the non-two case between the platform and the reaction chamber are not described here.) Also imitate ... Please refer to the fourth figure shown in the figure. It is a dynamic sound diagram of Tailuo Days. The reaction chamber 2 generates particles t ί, which extend through the upper edge of the shielding ring 5 Convex ring; 6 with airflow! The airflow dispersing element 4 of the inlet 4 is ^ 'to avoid the particles K stagnation caused by the gas k flowing to both sides: on the inner wall of f 2, therefore, only i reacts to it during cleaning, without the need for more care To clean the reaction chamber: = =: = Process quality of the chamber. j., the other way around, because the microparticles B inside the convex ring wall 6 can be accumulated in the cavity 7, and the materials 1 and 7 'are buried, the medium-best embodiment can be == as shown in the four figures), the main consideration is to make the first, contact surface area, the recess 7 can also be square in order to increase the connection (as shown in the fifth figure) or other 1229899 5. Description of the invention (6) ----- It is implemented in the form of a polygon (as shown in Figure 6), which is not flexible for use. / As mentioned above, the present invention is mainly related to the barrier formed between the shielding ring and the periphery of the airflow guide and the reaction chamber wall to prevent particles from directly staying on the inner wall of the reaction chamber of the process and forming between the barrier walls A plurality of cavities is used to increase the number of particles (pa tices) to effectively reduce their introduction into the substrate and cause damage to the degree of accumulation. [Features and Effects] When the wafer shielding structure provided by the present invention is compared with the conventional technology, it has the following advantages: 1. It can prevent particles from directly staying on the inner wall of the reaction chamber. 2. A cavity is formed on the inner side of the convex ring wall extended by the upper edge of the shielding ring to increase the adhesion to the particles. 3. It has industrial utilization value. The above detailed description is a specific description of one of the feasible embodiments of the present invention, but this embodiment is not intended to limit the patent scope of the present invention. Any equivalent implementation or change that does not depart from the technical spirit of the present invention should be included in Within the scope of the patent in this case. In summary, 'This case is not only technically innovative, but also enhances the above-mentioned multiple effects compared with conventional items. It should have fully met the requirements for statutory invention patents that are novel and progressive. Apply for it in accordance with the law and ask your office to approve this. Application for invention patents, to encourage inventions, to the sense of virtue.

Page 10 1229899 Brief description of the drawings [Simplified description of the drawings] The first diagram is a schematic cross-sectional view of a conventional reaction chamber. The second figure is a trial embodiment of the present invention. The third picture is a top view between the shielding ring and the wall of the convex ring of the present invention. The fourth picture is the situation where the particles are attached to the present invention. The fifth figure is another embodiment of the present invention. The sixth figure is another embodiment of the present invention. Symbols of the main parts] 1 ...... Reaction chamber 12 ...... Top wall 14 ...... Air inlet 15 ...... Seat 5 2 ...... Air flow Duct 5 4 ... Annular airflow outlet 2 ... Reaction chamber 4 ... Airflow guide 4 4 ... Airflow dispersing element 5 1 .... .. upper shielding surface 6 ... convex ring wall A ... substrate 11 ... side wall 13 ... bottom wall 4 1 ... dispersed Airflow element 5 1 ... channel 5 3 ... airflow supply 16 ... shield ring 3 ... table 4 1 ... airflow inlet 5 ... shield ring 5 2 ... support assembly 7 ... recess B ... fine particles

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Claims (1)

1229899 VI. Scope of patent application 1. A wafer shielding device, including a reaction chamber, with a supporting substrate .. ^ ^ an airflow guide, and He's bismuth, and opposite to the platform to form a ## ί : t has a convex ring wall extending from the upper edge of the shielding surface, and the convex ring fortress system forms a barrier I relative to the hole-guide port and the reaction chamber wall. The wafer shielding device f described in item 1 of the J patent scope, wherein the milk-guy bow system includes an airflow inlet, and a radon gas dispersion element is communicated in the reaction chamber. _ 3. The wafer shielding device described in item 1 of the scope of patent application, wherein the shielding ring further includes a supporting component aligned with the substrate. ▲ 4. The wafer shielding device described in item 1 of the scope of the patent application, in which the inner edge of the β-hai convex% wall further forms a plurality of recesses. 5. The wafer shielding device as described in item 4 of the scope of patent application, wherein the cavity may be semi-circular. 6. The wafer shielding device as described in item 4 of the scope of patent application, wherein the cavity can be a polygonal polygon. Page 12