JP2018168453A - Thin film deposition system - Google Patents

Abstract

To provide a thin film deposition system that can deposit a thin film while minimizing a decline in rate of operation due to maintenance.SOLUTION: A thin film deposition system includes: a substrate holding part 5 for holding a substrate 2 on which a thin film is deposited; and at least two deposition chambers 7 for depositing the same type thin film on the substrate 2. The deposition chamber 7 includes: an electrode 72 for generating a plasma; a cleaning gas feed part 74 for feeding a cleaning gas for removing a thin film adhering to the electrode 72; and a shutter portion 76 for switching between a state that allows the plasma and the cleaning gas to reach the substrate 2 held by the substrate holding part 5 and a state that does not allow it.SELECTED DRAWING: Figure 1

Description

  The present invention is a thin film forming apparatus for forming a thin film on a strip-shaped base material, and is a thin film for forming a thin film with high purity on a base material by passing the base material through a film forming chamber. The present invention relates to a forming apparatus.

  In recent years, a barrier film in which a barrier film is formed on the surface of a plastic film for the purpose of, for example, preventing oxidation or preventing water intrusion has been used.

  Such a barrier film is formed by a thin film forming apparatus shown in Patent Document 1 below. For example, as shown in FIG. 6, the thin film forming apparatus 100 includes a main roll chamber 101, a main roll 102 accommodated in the main roll chamber 101, an unwinding roll 104 that feeds a belt-like base material 103, and a base material 103. A winding roll 105 that winds the base material 103 from the unwinding roll 104 in contact with the outer peripheral surface 102 a of the main roll 102, and is wound by the winding roll 105. The base material 103 is conveyed while applying a predetermined tension. Then, by providing the partition 106 on the outer diameter side of the main roll 102, the film forming chamber 107 is formed in the circumferential direction of the main roll 102. An electrode 108 is provided inside the film forming chamber 107. A plasma forming gas is supplied from the plasma forming gas supply unit 109 to the inside of the film forming chamber 107, and a high frequency voltage is applied to the electrode 108, thereby generating plasma. The forming gas is in a plasma state. In such an environment where the plasma forming gas is in a plasma state, a thin film source gas is supplied from the source gas supply unit 110 to the inside of the film forming chamber 107, whereby a deposited film is formed on the base material 103 by plasma CVD. Is done. That is, the source gas is decomposed by plasma and deposited on the base material 103. In such a thin film forming apparatus 100, the base material 103 supplied from the unwinding roll 104 is continuously passed through the film formation chamber 107 along the outer peripheral surface 102 a of the main roll 102, whereby the base material 103 A predetermined vapor deposition film is formed over the longitudinal direction.

JP 2001-303249 A

  However, in the thin film forming apparatus 100 described above, it is necessary to periodically stop the operation of the apparatus for maintenance of the apparatus. Specifically, when a film forming operation on the base material 103 is performed, a thin film derived from a source gas is gradually attached to the electrode 108. If this film is left unattended, plasma generation may be hindered, and the film forming capability of the thin film forming apparatus 100 may be reduced. Further, when the thin film attached to the electrode is peeled off, there is a possibility that it becomes particles and adheres to the base material 103. In order to prevent this, for example, instead of supplying the plasma gas from the plasma forming gas supply unit 109, the cleaning gas is supplied from the cleaning gas supply unit 111, and the thin film on the surface of the electrode 108 is etched by generating plasma by the cleaning gas. It is necessary to perform cleaning (cleaning), and it is necessary to perform this cleaning process periodically. However, since the film formation on the base material 103 cannot be performed during the cleaning process, the operation rate of the thin film forming apparatus 100 is not easily increased. There was no problem.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a thin film forming apparatus capable of forming a thin film while minimizing a decrease in operating rate due to maintenance.

  In order to solve the above problems, a thin film forming apparatus of the present invention includes a base material holding unit for holding a base material on which a thin film is formed, and at least two film forming chambers for forming the same type of thin film on the base material. The film formation chamber includes an electrode for generating plasma, a cleaning gas supply unit that supplies a cleaning gas for removing a thin film attached to the electrode, and the plasma and the substrate held by the substrate holding unit. And a shutter unit that switches between a state where the cleaning gas can reach and a state where the cleaning gas cannot reach.

  According to the thin film forming apparatus, it is possible to form a thin film while minimizing a decrease in operating rate due to maintenance. Specifically, even when a thin film is deposited on the electrode in one film formation chamber and maintenance is required, the film formation is performed while the thin film formation on the substrate is being performed in the remaining film formation chamber. After the plasma chamber and the cleaning gas cannot reach the substrate by the shutter portion with respect to the film chamber, the thin film adhering to the electrode is removed by the cleaning gas, thereby stopping the thin film forming operation of the thin film forming apparatus. The electrode can be maintained without any problems.

  In addition, it may further include a shutter moving mechanism for moving the shutter unit between the adjacent film forming chambers, and the shutter unit may be used in common in the adjacent film forming chambers.

  By doing so, it is possible to form with a simple configuration such that when one of the film forming chambers can form a thin film on the substrate, the other film forming chamber can maintain the electrodes.

  Further, it is preferable to further include a source gas supply unit that is provided between the shutter unit and the substrate holding unit and that is used in common in the adjacent film forming chambers and supplies a source gas serving as a thin film material. .

  By doing so, the source gas can always be supplied from one source gas supply unit toward the film forming chamber used for forming the thin film on the base material.

  According to the thin film forming apparatus of the present invention, it is possible to form a thin film while minimizing a decrease in operating rate due to maintenance.

It is the schematic showing the thin film formation apparatus in one Embodiment of this invention. It is the schematic showing the thin film formation apparatus in one Embodiment of this invention. It is the schematic showing the thin film formation apparatus in one Embodiment of this invention. It is the schematic showing the thin film formation apparatus in other embodiment of this invention. It is the schematic showing the thin film formation apparatus in other embodiment of this invention. It is the schematic showing the thin film formation apparatus in conventional embodiment.

  Embodiments according to the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic view of a thin film forming apparatus 1 according to an embodiment of the present invention, FIG. 1 (b) is a bottom view, and FIG. 1 (a) is an AA sectional view in FIG. 1 (b).

  The thin film forming apparatus 1 is for forming a thin film by performing a surface treatment on a base material. For example, a thin film forming apparatus 1 is used for forming a barrier film on a plastic film for the purpose of preventing oxidation and preventing moisture intrusion, Used for protective films, flexible solar cells, etc. Specifically, in the case of a flexible solar cell, a solar cell composed of each electrode layer, a photoelectric conversion layer, and the like is formed on a band-shaped substrate such as a plastic film, and then the thin film forming apparatus 1 uses the solar cell. A barrier film is formed by forming a plurality of thin films on the cell. Thereby, the penetration | invasion of a water | moisture content into a photovoltaic cell is prevented effectively, and the flexible solar cell excellent in the oxidation characteristic can be formed.

  The thin film forming apparatus 1 includes an unwinding roll 3 that feeds out a base material 2, a winding roll 4 that winds up the supplied base material 2, and a main roll disposed between the unwinding roll 3 and the winding roll 4. It has a roll 5, a main roll chamber 6 for accommodating these, and a film forming chamber 7 (film forming chambers 7 a and 7 b) for forming a thin film, and the base material 2 fed from the unwinding roll 3 is used as the main. A thin film is formed on the substrate 2 by being passed along the outer peripheral surface 51 of the roll 5 while passing through each film forming chamber 7, and is wound up by the winding roll 4. Further, each film forming chamber 7 has a shutter unit 76, and a state in which plasma generated in each film forming chamber 7 can reach the base material 2 on the main roll 5 and a state in which it cannot. Can be switched.

  The unwinding roll 3 and the winding roll 4 have a substantially cylindrical core portion 31 and a core portion 41, and the base material 2 is wound around the core portion 31 and the core portion 41. By rotating the portion 41, the substrate 2 can be sent out or taken up. That is, by controlling the rotation of the core portion 31 and the core portion 41 by a control device (not shown), the feeding speed or the winding speed of the base material 2 can be increased and decreased. Specifically, the base material 2 is sent to the downstream side by rotating the upstream core portion in a state where the base material 2 receives a tensile force from the downstream side, and a brake is appropriately applied to the upstream core portion. By applying, the base material 2 is sent out at a constant speed without bending. In addition, by adjusting the rotation of the downstream core portion, it is possible to prevent the substrate 2 that has been sent out from being bent, and conversely, the substrate 2 can be wound up so that an unnecessary tension is not applied. It is like that.

  Here, the base material 2 is a thin plate-like long body extending in one direction, and a long body having a flat plate shape with a thickness of 0.01 mm to 0.2 mm and a width of 5 mm to 1600 mm is applied. Moreover, although it does not specifically limit as a material, For example, resin films, such as PET, are used suitably.

  As described above, the unwinding roll 3 and the winding roll 4 are paired, one of which feeds the base material 2 and the other of which winds the base material 2 at the same winding speed as the feeding speed. It is possible to transport the substrate 2 while maintaining the tension applied to 2 at a predetermined value.

  The main roll 5 is a transport unit for transporting the base material 2 supplied from the upstream unwinding roll 3 to the downstream winding roll 4 while maintaining the posture of the base material 2 during film formation. . That is, in the present invention, the main roll 5 serves as a base material holding part for holding the base material 2 on which a thin film is formed.

  The main roll 5 is disposed between the unwinding roll 3 and the winding roll 4, and is formed in a substantially cylindrical shape having a larger diameter than the core portion 31 and the core portion 41. The outer peripheral surface 51 of the main roll 5 is formed as a curved surface having a constant curvature in the circumferential direction, and is driven and controlled according to the rotation of the core portion 31 and the core portion 41 by a control device (not shown) and sent out from the unwinding roll 3. The base material 2 is conveyed along the outer peripheral surface 51 of the main roll 5 in a state where a predetermined tension is applied. That is, when the main roll 5 rotates according to the rotation of the unwinding roll 3 and the winding roll 4 with the base material 2 along the outer peripheral surface 51 of the main roll 5, the base material 2 becomes the whole base material 2. In a stretched state, the surface of the film forming chamber 7 is conveyed from the unwinding roll 3 to the winding roll 4 in a posture facing each film forming chamber 7.

  By transporting and forming a film with the base material 2 stretched in this way, fluttering of the base material 2 during film formation can be prevented, and the film thickness accuracy of the thin film laminated on the base material 2 is improved. In addition, the generation of particles due to flapping of the substrate 2 can be prevented. Further, by increasing the radius of curvature of the main roll 5, film formation is performed while the base material 2 is supported in a more flat state, and thus it is possible to prevent warping of the base material 2 after film formation. it can.

  The main roll chamber 6 includes a front cover 64, a back cover 65, bottom cover 63a, 63b, and the like, and is for accommodating the main roll 5 and maintaining a constant pressure in the chamber. A vacuum pump 61 is connected to the main roll chamber 6. By operating the vacuum pump 61, the pressure in the main roll chamber 6 can be controlled.

  In the present embodiment, the unwinding roll 3 and the winding roll 4 are accommodated in the main roll chamber 6, but a configuration in which these are provided outside the main roll chamber 6 may be employed. By providing these in the main roll chamber 6 as in the present embodiment, it is possible to protect the substrate 2 and the substrate 2 after film formation (film formation substrate) from being exposed to the atmosphere.

  The film formation chamber 7 is for forming a thin film as a vapor deposition film on the substrate 2 by vapor deposition. In this embodiment, the substrate 2 is formed by plasma CVD (Chemical Vapor Deposition) which is a kind of vapor deposition. A thin film is formed on top.

  In the present embodiment, two film forming chambers 7 (film forming chambers 7 a and 7 b) are continuously provided along the main roll 5 in the main roll chamber 6. The upstream side (the side closer to the unwinding roll 3) is called a film forming chamber 7a, and the downstream side is called a film forming chamber 7b. In the following description, when the film forming chamber 7a and the film forming chamber 7b are not distinguished, they are simply referred to as the film forming chamber 7.

  Each film forming chamber 7 is formed by disposing a partition portion on the outer diameter side of the main roll 5. Specifically, three partition portions 62 a to 62 c are provided on the outer diameter side of the main roll 5 toward the outer peripheral surface 51 of the main roll 5, so that each partition portion and the wall surface (front surface) of the main roll chamber 6 are provided. The partition 64 of each film forming chamber 7 is configured by the cover 64, the back cover 65, and the bottom covers 63a and 63b). As a result, the film is formed so as to have an opening toward the film formation surface of the substrate 2 on the main roll 5 (the surface opposite to the surface facing the main roll 5) and surround a part of the film formation surface. The chambers 7 a and 7 b are continuously formed in the transport direction of the base material 2.

  Here, each film forming chamber 7 shares a partition part which becomes a part of the partition part of the film forming chamber 7 with the adjacent film forming chamber 7. Specifically, for example, the partition part 62b is also a partition part of the film forming chamber 7a and also a partition part of the film forming chamber 7b. That is, the film forming chamber 7a is formed by the front cover 64, the back cover 65, the bottom cover 63a, and the partition plates 62a and 62b, and the front cover 64, the back cover 65, the bottom cover 63b, and the partition plates 62b and 62c. A film forming chamber 7b is formed.

  Thus, when the base material 2 is transported from the unwinding roll 3 to the winding roll 4 along the main roll 5, the base material 2 that has passed through the partition 62a is transported into the film forming chamber 7a, and then the partition. By transporting the base material 2 that has passed through the part 62b into the film forming chamber 7b, a thin film can be formed on the surface of the base material 2 on the film forming surface side by each film forming chamber 7.

  The film forming chambers 7a and 7b are film forming means for forming a thin film that is a deposited film on the substrate 2 by a vapor deposition method. In this embodiment, a plasma CVD (Chemical Vapor Deposition) method, which is a kind of vapor deposition method. Thus, a thin film is formed on the substrate 2.

  The film forming chamber 7a supplies a pressure reducing unit 71a for reducing the pressure inside the chamber, an electrode 72a for applying a high voltage for generating plasma, and a raw material gas which is a raw material for a thin film formed on the substrate 2 into the chamber. A source gas supply unit 73a, a cleaning gas supply unit 74a for supplying a cleaning gas for cleaning the electrode into the chamber, and a plasma forming gas supply unit 75a for supplying a plasma forming gas for forming plasma into the chamber. In the state where the inside of the chamber is decompressed by the decompression unit 71a and the plasma forming gas is supplied from the plasma forming gas supply unit 75a, a voltage is applied to the electrode 72a, thereby generating plasma around the electrode 72a. The inside becomes a plasma atmosphere. By supplying the source gas from the source gas supply unit 73a in the plasma atmosphere as described above, the source gas is decomposed by the plasma, and a thin film is formed on the film forming surface of the substrate 2 facing the film forming chamber 7a. Form. On the other hand, the thin film is deposited on the surface of the electrode 72a and the inner wall surface of the film forming chamber 7a at the same time as the thin film is formed on the base material 2 in this way, but the cleaning gas is supplied from the cleaning gas supply unit 74a to By applying a voltage to generate plasma by the cleaning gas, the thin film reacts with the plasma, and the thin film is decomposed and removed (etched).

  Similarly to the film forming chamber 7a, the film forming chamber 7b also includes a decompression unit 71b, an electrode 72b, a source gas supply unit 73b, a cleaning gas supply unit 74b, and a plasma forming gas supply unit 75b. By applying a voltage to the electrode 72b in a state where the inside of the chamber is decompressed by the decompression unit 71b and the plasma forming gas is supplied from the plasma forming gas supply unit 75b, plasma is generated around the electrode 72b, Plasma atmosphere. By supplying the source gas from the source gas supply unit 73b in the plasma atmosphere as described above, the source gas is decomposed by the plasma, and a thin film is formed on the film forming surface of the substrate 2 facing the film forming chamber 7b. Form. On the other hand, the thin film is deposited on the surface of the electrode 72b and the inner wall surface of the film forming chamber 7b at the same time as the thin film is formed on the substrate 2 in this way. By supplying and applying a voltage to the electrode 72a to generate plasma by the cleaning gas, the thin film reacts with the plasma, and the thin film is decomposed and removed (etched).

  The decompression unit 71a and the decompression unit 71b are openings provided on the inner wall surface of the film forming chamber 7, and are connected to a vacuum pump through a pipe. In the following description, when the decompression unit 71a and the decompression unit 71b are not distinguished, they are simply referred to as the decompression unit 71.

  By operating a vacuum pump connected to each decompression unit 71, the inside of each film forming chamber 7 can be decompressed via each decompression unit 71. Further, in this embodiment, a pressure control mechanism for controlling the pressure in the chamber by depressurization is further provided, and the inside of the film forming chamber 7 is depressurized until a predetermined pressure is reached before supplying the source gas.

  In addition, various gases also flow into the vacuum pump by performing decompression while supplying various gases, but the vacuum pump connected to each decompression unit 71 is not mixed with the raw material gas and the cleaning gas. Separated. Thereby, the pressure in each film forming chamber 7 can be individually controlled by the pressure control mechanism.

  The electrodes 72a and 72b are inductively coupled electrodes having a substantially U shape, and a high frequency power source (not shown) is connected to one end. When a high frequency is applied to the electrodes 72a and 72b by a high frequency power source in a reduced pressure environment, the plasma forming gas around the electrodes 72a and 72b is ionized to generate (discharge) plasma. In the following description, when the electrodes 72a and 72b are not distinguished, they are simply referred to as electrodes 72.

  The source gas supply units 73a and 73b are openings provided on the inner wall surface of the film forming chamber 7, and are connected to source gas supply means outside the apparatus through piping. In the following description, when the source gas supply unit 73a and the source gas supply unit 73b are not distinguished, they are simply referred to as the source gas supply unit 73.

  Here, in this embodiment, the source gas supplied from the source gas supply unit 73a and the source gas supplied from the source gas supply unit 73b are the same. In this embodiment, for example, HMDS (hexamethyldisilazane) gas is used. is there. In this embodiment, as shown in FIG. 1, the source gas supply units 73a and 73b are connected to a common source gas supply unit, and the pipes connecting the source gas supply unit 73 and the source gas supply unit are connected to each other. An open / close valve is provided.

  The cleaning gas supply parts 74a and 74b are openings provided on the inner wall surface of the film forming chamber 7, and are connected to cleaning gas supply means outside the apparatus through a pipe. In the following description, when the cleaning gas supply unit 74a and the cleaning gas supply unit 74b are not distinguished, they are simply referred to as the cleaning gas supply unit 74.

  Here, in this embodiment, the cleaning gas supplied from the cleaning gas supply unit 74a and the cleaning gas supplied from the cleaning gas supply unit 74b are the same. In this embodiment, for example, a gas containing halogen such as fluorine or chlorine is used. is there. In this embodiment, as shown in FIG. 1, the cleaning gas supply parts 74a and 74b are connected to a common cleaning gas supply means, and the pipes connecting the cleaning gas supply parts 74 and the cleaning gas supply means are not connected. An open / close valve is provided.

  The plasma forming gas supply parts 75a and 75b are openings provided on the inner wall surface of the film forming chamber 7 near the electrodes 72, and are connected to plasma forming gas supply means outside the apparatus through piping. In the following description, when the plasma forming gas supply unit 75a and the source gas supply unit 75b are not distinguished, they are simply referred to as the plasma forming gas supply unit 75.

  Here, in this embodiment, the plasma forming gas supplied from the plasma forming gas supply unit 75a and the source gas supplied from the plasma forming gas supply unit 75b are the same, and in this embodiment, for example, oxygen gas. Further, as described above, since the source gas supplied from the source gas supply unit 73a and the source gas supplied from the source gas supply unit 73b are the same, the same kind of thin film is formed from the film formation chamber 7a and the film formation chamber 7b. (In this embodiment, a SiO2 film) is formed on the film forming surface of the substrate 2.

  In the present embodiment, as shown in FIG. 1, the plasma forming gas supply parts 75a and 75b are connected to a common plasma forming gas supply means, and the respective plasma forming gas supply parts 75 and the plasma forming gas supply means are connected to each other. An open / close valve is provided in the connecting pipe.

  Here, in the present invention, at least the decompression unit 71, the electrode 72, and the cleaning gas supply unit 74 can be blocked from the substrate 2 in each film forming chamber 7, that is, the substrate holding unit (main It further has a shutter portion 76 that can switch between a state in which plasma and cleaning gas can reach the substrate 2 held on the roll 5) and a state in which it cannot.

  In the present embodiment, one surface of the shutter unit 76 faces the main roll 5, and the other surface is the decompression unit 71, the electrode 72, the source gas supply unit 73, the cleaning gas supply unit 74, and the plasma forming gas supply unit. 75 is a metal flat plate facing 75, and is moved in the X-axis direction and the Z-axis direction shown in FIG. 1 by a shutter movement mechanism (not shown).

  The partition 62b, which is a common wall forming the film forming chambers 7a and 7b, has an opening through which the shutter 76 can pass, and the shutter 76 is adjacent to each other through the opening. It moves between the chamber 7a and the film forming chamber 7b.

  The shutter unit 76 can be in close contact with the surrounding wall surface when moved to the moving end. Specifically, an O-ring is provided in the vicinity of the outer peripheral portion of the surface of the shutter portion 76 that faces the electrode 72 and the like, and the front cover 64 and the rear cover 65 that form the wall portion of the film forming chamber 7a are provided. Are provided with grooves along the moving direction of the shutter portion 76, and the shutter portion 76 moves in the X-axis direction with the end portions inserted into these grooves. Further, a groove is also provided in the partition part 62a, and when the shutter part 76 reaches the moving end on the film forming chamber 7a side in the X-axis direction, the tip of the shutter part 76 is inserted into this groove. Then, when the shutter portion 76 moves to the side closer to the electrode 72a and the like in the Z-axis direction, the partition portion 62a, the front cover 64, the groove of the back cover 65, the opening of the partition portion 62b, and the O-ring of the shutter portion 76 Comes into contact with each other and comes into close contact with the wall surface of the film forming chamber 7a.

  Through the above operation, the portion including the decompression section 71a, the electrode 72a, the source gas supply section 73a, the cleaning gas supply section 74a, and the plasma forming gas supply section 75a of the film forming chamber 7a (shown by hatching in FIG. 1A). Part) is sealed. Similarly for the film forming chamber 7b, the shutter portion 76 sealed the portion including the decompression portion 71b, the electrode 72b, the source gas supply portion 73b, the cleaning gas supply portion 74b, and the plasma forming gas supply portion 75b. State.

  1A and 1B, as described above, the shutter unit 76 causes the decompression unit 71a, the electrode 72a, the source gas supply unit 73a, the cleaning gas supply unit 74a, and the plasma forming gas supply unit 75a of the film forming chamber 7a to be used. The included portion (the portion indicated by hatching in FIG. 1A) is in a sealed state. In this state, even if a plasma atmosphere is formed by the electrode 72a and the plasma forming gas supply part 75a, the plasma is blocked by the shutter part 76 and reaches the base material 2 held by the main roll 5 (base material holding part). It is impossible. Similarly, even when the cleaning gas is supplied from the cleaning gas supply unit 74a, the cleaning gas is blocked by the shutter unit 76 and reaches the base material 2 held by the main roll 5 (base material holding unit). Impossible. Therefore, in this state, even if a plasma atmosphere is formed by the electrode 72a and the cleaning gas supply unit 74a and the electrode 72a and the like are cleaned, the operation does not affect the substrate 2 held on the main roll 5 at all.

  Accordingly, the film forming chamber 7b is sealed in a state where the pressure reducing unit 71a, the electrode 72a, the source gas supplying unit 73a, the cleaning gas supplying unit 74a, and the plasma forming gas supplying unit 75a of the film forming chamber 7a are sealed by the shutter unit 76. By forming a thin film on the substrate 2, the electrode 72a and the like can be cleaned while performing a thin film forming operation on the substrate 2.

  Further, FIG. 1A shows the state of the open / close valve connected to each source gas supply unit 73, each cleaning gas supply unit 74, and each plasma forming gas supply unit 75 at this time. The filled and illustrated valves indicate a closed state, and the unfilled valves indicate an open state. Since the source gas and the plasma forming gas are necessary only when forming the thin film, the valve on the source gas supply unit 73a side is closed, the valve on the source gas supply unit 73b side is opened, and the valve on the plasma forming gas supply unit 75a side is opened. Is closed, and the valve on the plasma forming gas supply unit 75b side is open. On the other hand, since the cleaning gas is necessary only for cleaning the electrodes and the like, the valve on the cleaning gas supply unit 74a side is opened and the valve on the cleaning gas supply unit 74b side is closed. By so doing, only one source gas supply means, cleaning gas supply means, and plasma forming gas supply means need be prepared, and the apparatus configuration can be simplified.

  Next, the schematic diagram of FIG. 2 shows the state of the thin film forming apparatus 1 when the shutter unit 76 moves to the film forming chamber 7b side. FIG. 2B is a bottom view, and FIG. 2A is a cross-sectional view taken along line AA in FIG.

  As the shutter unit 76 moves to the film forming chamber 7b side, the decompression unit 71b of the film forming chamber 7b, the electrode 72b, the source gas supply unit 73b, the cleaning gas supply unit 74b, and the part including the plasma forming gas supply unit 75b ( The part shown by hatching in FIG. 2A is in a sealed state. In this state, even if the plasma atmosphere is formed by the electrode 72b and the cleaning gas supply unit 74b and the electrode 72b and the like are cleaned in the same manner as described above, the operation does not affect the substrate 2 held by the main roll 5 at all. do not do. Therefore, the valve on the source gas supply unit 73a side and the valve on the plasma forming gas supply unit 75a side are opened, the valve on the source gas supply unit 73b side and the valve on the plasma forming gas supply unit 75b side are closed, and the cleaning gas The valve on the supply unit 74a side is closed and the valve on the cleaning gas supply unit 74b side is opened to generate plasma in each film formation chamber 7, thereby performing a thin film forming operation on the substrate 2 in the film formation chamber 7a. However, the electrode 72b and the like can be cleaned in the film formation chamber 7b.

  Then, the shutter unit 76 is periodically moved to perform cleaning of the film forming chamber 7 and the electrode 72 that form a thin film on the substrate 2 between the film forming chamber 7a and the film forming chamber 7b. By replacing the membrane chamber 7, it is possible to continue forming a thin film on the substrate 2 without stopping the thin film forming operation for maintenance.

  Further, by using the shutter unit 76 in common between a plurality of adjacent film forming chambers 7 as in the present embodiment, when one of the film forming chambers 7 can form a thin film on the base material 2, it is no longer necessary. A configuration in which one film forming chamber 7 is in a state where maintenance of the electrode 72 and the like can be performed can be formed with a simple configuration.

  Further, the shutter unit 76 seals the portion including the decompression unit 71, the electrode 72, the source gas supply unit 73, the cleaning gas supply unit 74, and the plasma forming gas supply unit 75 of the film forming chamber 7, Even if the pressure in the sealed film forming chamber 7 is released to atmospheric pressure, the pressure in the other film forming chamber 7 and the pressure in the main roll chamber 6 are not affected. Therefore, as shown in FIG. 3, for example, when the shutter portion 76 is on the film forming chamber 7a side, the bottom cover 63a can be removed from the thin film forming apparatus 1, and the film forming chamber 7b allows the inside of the thin film forming apparatus 1 to be removed. The electrode 72a can be exchanged while the thin film is formed on the substrate 2.

  Next, FIG. 4 is a schematic view showing a thin film forming apparatus according to another embodiment of the present invention.

  In this embodiment, the source gas supply unit is common between the film forming chamber 7a and the film forming chamber 7b, and is intermediate between both film forming chambers 7, and the shutter unit 76, the main roll 5 (base material holding unit), Only the source gas supply unit 73c is provided at a position between the two.

  Since the source gas supply unit 73c is positioned between the shutter unit 76 and the main roll 5 (base material holding unit), the source gas is not obstructed by the shutter unit 76 regardless of the position of the shutter unit 76. In order to reach the material 2, the source gas can always be supplied from one source gas supply unit 73 c toward the film forming chamber 7 used for forming a thin film on the base material 2. In addition, since the source gas supply unit 73c is disposed in the vicinity of the base material 2 as compared with the case where it is provided in the vicinity of the electrode 72 as shown in FIG. Gas can be used for thin film formation.

  With the above-described thin film forming apparatus, it is possible to form a thin film while minimizing the decrease in operation rate due to maintenance.

  Here, the thin film forming apparatus of the present invention is not limited to the illustrated form, and may be of other forms within the scope of the present invention. For example, in the above description, the shutter unit is used in common among a plurality of film forming chambers. However, the present invention is not limited to this, and as shown in FIG. 5, the film forming chamber 7a has the shutter unit 77a, and the film forming chamber 7b has You may make it have the shutter part 77b. That is, each film forming chamber may individually have a shutter portion.

  Further, the shutter unit is not limited to moving in the X-axis direction and Z-axis direction in the present description, and may move in the Y-axis direction.

  In the present embodiment, the case where the number of film forming chambers 7 is two has been described. However, the number of film forming chambers may be other than two, or three or more.

  Moreover, although the shape of a base material is a strip | belt shape in said embodiment, it may be a sheet form. And the base material holding | maintenance part which hold | maintains a base material during thin film formation is roll shape like the main roll 5 in order to convey the strip | belt-shaped base material 2, but hold | maintains a sheet-like base material. In some cases, it may be on a flat plate.

DESCRIPTION OF SYMBOLS 1 Thin film forming apparatus 2 Base material 3 Unwinding roll 4 Winding roll 5 Main roll 6 Main roll chamber 7 Deposition chamber 7a Deposition chamber 7b Deposition chamber 31 Core part 41 Core part 51 Outer peripheral surface 61 Vacuum pump 62a Partition part 62b Partition section 62c Partition section 63a Bottom cover 63b Bottom cover 64 Front cover 65 Back cover 71 Decompression section 71a Decompression section 71b Decompression section 72 Electrode 72a Electrode 72b Electrode 73 Source gas supply section 73a Source gas supply section 73b Source gas supply section 73c Source gas Supply part 74 Cleaning gas supply part 74a Cleaning gas supply part 74b Cleaning gas supply part 75 Plasma forming gas supply part 75a Plasma forming gas supply part 75b Plasma forming gas supply part 76 Shutter part 77a Shutter part 77b Shutter unit 100 Thin film forming apparatus 101 Main roll chamber 102 Main roll 102a Outer peripheral surface 103 Substrate 104 Unwinding roll 105 Winding roll 106 Partition unit 107 Film forming chamber 108 Electrode 109 Plasma forming gas supplying unit 110 Raw material gas supplying unit 111 Cleaning Gas supply unit

Claims (3)

A substrate holding part for holding a substrate for forming a thin film;
At least two deposition chambers for forming a thin film of the same type on a substrate;
With
The film forming chamber includes:
An electrode for generating plasma;
A cleaning gas supply unit for supplying a cleaning gas for removing the thin film adhering to the electrode;
A shutter unit that switches between a state in which the plasma and the cleaning gas can reach the substrate held by the substrate holding unit and a state in which the plasma cannot be reached;
A thin film forming apparatus comprising:   2. The apparatus according to claim 1, further comprising a shutter moving mechanism that moves the shutter unit between adjacent film forming chambers, wherein the shutter unit is commonly used in the adjacent film forming chambers. Thin film forming equipment.   It further comprises a source gas supply unit that is provided between the shutter unit and the substrate holding unit and that is used in common in the adjacent film forming chambers and supplies a source gas serving as a thin film material. The thin film forming apparatus according to claim 1 or 2.

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