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JP2018164070A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP2018164070A
JP2018164070A JP2017168249A JP2017168249A JP2018164070A JP 2018164070 A JP2018164070 A JP 2018164070A JP 2017168249 A JP2017168249 A JP 2017168249A JP 2017168249 A JP2017168249 A JP 2017168249A JP 2018164070 A JP2018164070 A JP 2018164070A
Authority
JP
Japan
Prior art keywords
wiring
memory
pillar
wirings
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017168249A
Other languages
English (en)
Japanese (ja)
Inventor
拓也 二山
Takuya Futayama
拓也 二山
剛 四方
Takeshi Yomo
剛 四方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Toshiba Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Priority to TW106136069A priority Critical patent/TWI644399B/zh
Priority to TW107137803A priority patent/TWI724338B/zh
Priority to TW110108161A priority patent/TWI771943B/zh
Priority to CN201711135070.8A priority patent/CN108666323B/zh
Priority to US15/909,906 priority patent/US10269828B2/en
Publication of JP2018164070A publication Critical patent/JP2018164070A/ja
Priority to US16/356,967 priority patent/US10825829B2/en
Priority to US17/030,776 priority patent/US11164888B2/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP2017168249A 2017-03-27 2017-09-01 半導体記憶装置 Pending JP2018164070A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW106136069A TWI644399B (zh) 2017-03-27 2017-10-20 Semiconductor memory device
TW107137803A TWI724338B (zh) 2017-03-27 2017-10-20 半導體記憶裝置及進行寫入動作之方法
TW110108161A TWI771943B (zh) 2017-03-27 2017-10-20 半導體記憶裝置及進行寫入動作之方法
CN201711135070.8A CN108666323B (zh) 2017-03-27 2017-11-16 半导体存储装置
US15/909,906 US10269828B2 (en) 2017-03-27 2018-03-01 Semiconductor memory device
US16/356,967 US10825829B2 (en) 2017-03-27 2019-03-18 Semiconductor memory device
US17/030,776 US11164888B2 (en) 2017-03-27 2020-09-24 Semiconductor memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017061208 2017-03-27
JP2017061208 2017-03-27

Publications (1)

Publication Number Publication Date
JP2018164070A true JP2018164070A (ja) 2018-10-18

Family

ID=63860408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017168249A Pending JP2018164070A (ja) 2017-03-27 2017-09-01 半導体記憶装置

Country Status (3)

Country Link
JP (1) JP2018164070A (zh)
CN (1) CN108666323B (zh)
TW (3) TWI724338B (zh)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111081302A (zh) * 2018-10-22 2020-04-28 东芝存储器株式会社 半导体存储装置
CN111613620A (zh) * 2019-02-26 2020-09-01 东芝存储器株式会社 半导体存储装置
CN112242401A (zh) * 2019-07-19 2021-01-19 铠侠股份有限公司 半导体存储装置
CN112349724A (zh) * 2019-08-06 2021-02-09 三星电子株式会社 存储器装置
WO2021053725A1 (ja) * 2019-09-17 2021-03-25 キオクシア株式会社 メモリデバイス
WO2021181607A1 (ja) * 2020-03-12 2021-09-16 キオクシア株式会社 半導体記憶装置
CN113437081A (zh) * 2020-03-23 2021-09-24 铠侠股份有限公司 半导体存储装置
CN114203716A (zh) * 2020-09-17 2022-03-18 铠侠股份有限公司 半导体存储装置
US11282578B2 (en) 2019-09-19 2022-03-22 Kioxia Corporation Semiconductor storage apparatus including a memory cell array
US11410725B2 (en) 2020-01-10 2022-08-09 Kioxia Corporation Memory system
US11495303B2 (en) 2020-12-17 2022-11-08 Kioxia Corporation Semiconductor memory device
WO2022249528A1 (ja) * 2021-05-24 2022-12-01 キオクシア株式会社 メモリシステム
WO2023021752A1 (ja) * 2021-08-18 2023-02-23 キオクシア株式会社 メモリシステム
EP4202937A1 (en) * 2021-12-22 2023-06-28 Kioxia Corporation Semiconductor memory device
US11699478B2 (en) 2020-12-25 2023-07-11 Kioxia Corporation Semiconductor memory device in which data writing to cells is controlled using program pulses
US11715527B2 (en) 2020-12-03 2023-08-01 Kioxia Corporation Semiconductor storage device having first and second memory strings formed on opposite sides of the same pillar and method of performing a read operation therein
US11901011B2 (en) 2020-12-16 2024-02-13 Kioxia Corporation Semiconductor storage device having reduced threshold distribution interference
US12159040B2 (en) 2022-03-18 2024-12-03 Kioxia Corporation Semiconductor memory device
US12211567B2 (en) 2021-12-21 2025-01-28 Kioxia Corporation Memory system with verify operations of odd and even word lines
US12211557B2 (en) 2022-08-02 2025-01-28 Kioxia Corporation Semiconductor memory device
US12406739B2 (en) 2022-09-15 2025-09-02 Kioxia Corporation Semiconductor storage device
US12518832B2 (en) 2021-06-16 2026-01-06 Kioxia Corporation Semiconductor memory device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020047642A (ja) * 2018-09-14 2020-03-26 キオクシア株式会社 半導体記憶装置
JP2020065022A (ja) * 2018-10-19 2020-04-23 キオクシア株式会社 半導体装置及び半導体記憶装置
JP2020072191A (ja) * 2018-10-31 2020-05-07 キオクシア株式会社 半導体記憶装置
WO2020168449A1 (en) 2019-02-18 2020-08-27 Yangtze Memory Technologies Co., Ltd. Channel hole and bitline architecture and method to improve page or block size and performance of 3d nand
JP2020149744A (ja) * 2019-03-13 2020-09-17 キオクシア株式会社 半導体記憶装置
JP2020155494A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 半導体記憶装置
JP2020155714A (ja) 2019-03-22 2020-09-24 キオクシア株式会社 半導体記憶装置
TWI720547B (zh) * 2019-03-22 2021-03-01 日商東芝記憶體股份有限公司 半導體記憶裝置
JP2020155664A (ja) * 2019-03-22 2020-09-24 キオクシア株式会社 半導体記憶装置
JP2022118607A (ja) * 2021-02-02 2022-08-15 キオクシア株式会社 メモリデバイス
JP2023040926A (ja) * 2021-09-10 2023-03-23 キオクシア株式会社 半導体記憶装置
JP2023139390A (ja) * 2022-03-22 2023-10-04 キオクシア株式会社 半導体記憶装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5091491B2 (ja) * 2007-01-23 2012-12-05 株式会社東芝 不揮発性半導体記憶装置
US20100155818A1 (en) * 2008-12-24 2010-06-24 Heung-Jae Cho Vertical channel type nonvolatile memory device and method for fabricating the same
CN102959693B (zh) * 2010-06-30 2015-08-19 桑迪士克科技股份有限公司 超高密度垂直与非记忆器件及其制造方法
JP2012069217A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 不揮発性半導体記憶装置
KR101759659B1 (ko) * 2011-07-25 2017-07-20 삼성전자 주식회사 3차원 반도체 메모리 장치
KR101938004B1 (ko) * 2011-10-24 2019-04-10 에스케이하이닉스 주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법
KR20130076458A (ko) * 2011-12-28 2013-07-08 에스케이하이닉스 주식회사 비휘발성 메모리 장치의 제조 방법
WO2014089795A1 (zh) * 2012-12-13 2014-06-19 中国科学院微电子研究所 一种垂直沟道型三维半导体存储器件及其制备方法
JP2015097245A (ja) * 2013-11-15 2015-05-21 株式会社東芝 不揮発性半導体記憶装置、及びメモリシステム
US9397110B2 (en) * 2014-05-21 2016-07-19 Macronix International Co., Ltd. 3D independent double gate flash memory
KR20160111767A (ko) * 2015-03-17 2016-09-27 에스케이하이닉스 주식회사 로딩 개선을 위한 3차원 비휘발성 반도체 메모리 장치
CN107580728A (zh) * 2015-03-26 2018-01-12 Neo半导体公司 3d双密度nand快闪存储器
US9455261B1 (en) * 2015-07-10 2016-09-27 Micron Technology, Inc. Integrated structures
US20170062456A1 (en) * 2015-08-31 2017-03-02 Cypress Semiconductor Corporation Vertical division of three-dimensional memory device

Cited By (32)

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Publication number Priority date Publication date Assignee Title
CN111081302A (zh) * 2018-10-22 2020-04-28 东芝存储器株式会社 半导体存储装置
CN111081302B (zh) * 2018-10-22 2023-04-11 铠侠股份有限公司 半导体存储装置
CN111613620B (zh) * 2019-02-26 2023-09-15 铠侠股份有限公司 半导体存储装置
CN111613620A (zh) * 2019-02-26 2020-09-01 东芝存储器株式会社 半导体存储装置
CN112242401A (zh) * 2019-07-19 2021-01-19 铠侠股份有限公司 半导体存储装置
CN112242401B (zh) * 2019-07-19 2023-10-27 铠侠股份有限公司 半导体存储装置
JP7601483B2 (ja) 2019-08-06 2024-12-17 三星電子株式会社 メモリ装置
JP2021027329A (ja) * 2019-08-06 2021-02-22 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． メモリ装置
CN112349724A (zh) * 2019-08-06 2021-02-09 三星电子株式会社 存储器装置
TWI749455B (zh) * 2019-09-17 2021-12-11 日商鎧俠股份有限公司 記憶體裝置
WO2021053725A1 (ja) * 2019-09-17 2021-03-25 キオクシア株式会社 メモリデバイス
US11282578B2 (en) 2019-09-19 2022-03-22 Kioxia Corporation Semiconductor storage apparatus including a memory cell array
US11410725B2 (en) 2020-01-10 2022-08-09 Kioxia Corporation Memory system
WO2021181607A1 (ja) * 2020-03-12 2021-09-16 キオクシア株式会社 半導体記憶装置
US12507415B2 (en) 2020-03-12 2025-12-23 Kioxia Corporation Semiconductor memory device
CN113437081A (zh) * 2020-03-23 2021-09-24 铠侠股份有限公司 半导体存储装置
CN113437081B (zh) * 2020-03-23 2023-12-19 铠侠股份有限公司 半导体存储装置
CN114203716A (zh) * 2020-09-17 2022-03-18 铠侠股份有限公司 半导体存储装置
US11715527B2 (en) 2020-12-03 2023-08-01 Kioxia Corporation Semiconductor storage device having first and second memory strings formed on opposite sides of the same pillar and method of performing a read operation therein
US11901011B2 (en) 2020-12-16 2024-02-13 Kioxia Corporation Semiconductor storage device having reduced threshold distribution interference
US11495303B2 (en) 2020-12-17 2022-11-08 Kioxia Corporation Semiconductor memory device
US11699478B2 (en) 2020-12-25 2023-07-11 Kioxia Corporation Semiconductor memory device in which data writing to cells is controlled using program pulses
US12431190B2 (en) 2021-05-24 2025-09-30 Kioxia Corporation Memory system
WO2022249528A1 (ja) * 2021-05-24 2022-12-01 キオクシア株式会社 メモリシステム
US12518832B2 (en) 2021-06-16 2026-01-06 Kioxia Corporation Semiconductor memory device
WO2023021752A1 (ja) * 2021-08-18 2023-02-23 キオクシア株式会社 メモリシステム
US12211567B2 (en) 2021-12-21 2025-01-28 Kioxia Corporation Memory system with verify operations of odd and even word lines
EP4202937A1 (en) * 2021-12-22 2023-06-28 Kioxia Corporation Semiconductor memory device
US11967371B2 (en) 2021-12-22 2024-04-23 Kioxia Corporation Semiconductor memory device
US12159040B2 (en) 2022-03-18 2024-12-03 Kioxia Corporation Semiconductor memory device
US12211557B2 (en) 2022-08-02 2025-01-28 Kioxia Corporation Semiconductor memory device
US12406739B2 (en) 2022-09-15 2025-09-02 Kioxia Corporation Semiconductor storage device

Also Published As

Publication number Publication date
CN108666323B (zh) 2022-01-11
TWI724338B (zh) 2021-04-11
TW202147525A (zh) 2021-12-16
TWI644399B (zh) 2018-12-11
TW201929150A (zh) 2019-07-16
CN108666323A (zh) 2018-10-16
TWI771943B (zh) 2022-07-21
TW201836074A (zh) 2018-10-01

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