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JP2018019040A5
JP2018019040A5 JP2016150331A JP2016150331A JP2018019040A5 JP 2018019040 A5 JP2018019040 A5 JP 2018019040A5 JP 2016150331 A JP2016150331 A JP 2016150331A JP 2016150331 A JP2016150331 A JP 2016150331A JP 2018019040 A5 JP2018019040 A5 JP 2018019040A5
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light detection
detection device
semiconductor
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Priority to JP2016150331A priority Critical patent/JP2018019040A/en
Priority claimed from JP2016150331A external-priority patent/JP2018019040A/en
Priority to US15/656,490 priority patent/US10497818B2/en
Priority to CN201710628241.4A priority patent/CN107665897B/en
Publication of JP2018019040A publication Critical patent/JP2018019040A/en
Publication of JP2018019040A5 publication Critical patent/JP2018019040A5/ja
Priority to US16/662,713 priority patent/US11309442B2/en
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第１面と、前記第１面と対向する第２面とを有する半導体基板と、
信号電荷と同じ第１極性の電荷を多数キャリアとする第１導電型の第１半導体領域と、第２極性の電荷を多数キャリアとする第２導電型の第２半導体領域とにより構成されるＰＮ接合を有する光電変換部と、
前記半導体基板に埋め込まれた電極と、前記電極および前記半導体基板の間に配され、前記第２半導体領域と接する誘電部材とを有する埋め込み部と、を有する光検出装置であって、
前記第２半導体領域は、前記第１面に対して前記第１半導体領域よりも深い位置に配され、
前記埋め込み部は、前記第１面から、前記第１面に対して前記第１半導体領域よりも深い位置まで配され、
前記誘電部材と前記第１半導体領域とが接する領域付近の前記第２半導体領域に反転層が形成されるように、前記第１半導体領域と、前記第２半導体領域と、前記電極とに電位が供給されることを特徴とする光検出装置。 A semiconductor substrate having a first surface and a second surface opposite to the first surface;
PN composed of a first semiconductor region of the first conductivity type having a charge of the same first polarity as the signal charge as the majority carrier, and a second semiconductor region of the second conductivity type having the charge of the second polarity as the majority carrier A photoelectric conversion unit having a junction;
A photodetector comprising: an electrode embedded in the semiconductor substrate; and an embedded portion having a dielectric member disposed between the electrode and the semiconductor substrate and in contact with the second semiconductor region,
The second semiconductor region is disposed at a position deeper than the first semiconductor region with respect to the first surface,
The embedded portion is disposed from the first surface to a position deeper than the first semiconductor region with respect to the first surface,
A potential is generated between the first semiconductor region, the second semiconductor region, and the electrode such that an inversion layer is formed in the second semiconductor region near the region where the dielectric member and the first semiconductor region are in contact with each other. A light detector characterized in that it is supplied. 第１面と、前記第１面と対向する第２面とを有する半導体基板と、
信号電荷と同じ第１極性の電荷を多数キャリアとする第１導電型の第１半導体領域と、第２極性の電荷を多数キャリアとする第２導電型の第２半導体領域とにより構成されるＰＮ接合を有する光電変換部と、
前記半導体基板に埋め込まれた電極と、前記電極および前記半導体基板の間に配され、前記第２半導体領域と接する誘電部材とを有する埋め込み部と、
を有する光検出装置であって、
前記第１半導体領域と前記第２半導体領域の電位差が６Ｖ以上となるように、前記第１半導体領域と前記第２半導体領域に電位が供給され、
前記電極と前記第２半導体領域の電位差が、前記第１半導体領域と前記第２半導体領域の電位差以上になるように、前記電極に電位が供給されることを特徴とする光検出装置。 A semiconductor substrate having a first surface and a second surface opposite to the first surface;
PN composed of a first semiconductor region of the first conductivity type having a charge of the same first polarity as the signal charge as the majority carrier, and a second semiconductor region of the second conductivity type having the charge of the second polarity as the majority carrier A photoelectric conversion unit having a junction;
A buried portion having an electrode buried in the semiconductor substrate, and a dielectric member disposed between the electrode and the semiconductor substrate and in contact with the second semiconductor region;
A light detection device having
A potential is supplied to the first semiconductor region and the second semiconductor region such that a potential difference between the first semiconductor region and the second semiconductor region is 6 V or more.
An electric potential is supplied to the said electrode so that the electrical potential difference of the said electrode and the said 2nd semiconductor area may become more than the electrical potential difference of the said 1st semiconductor area and the said 2nd semiconductor area. 前記第１半導体領域と接続し、前記第１半導体領域に電位を供給するコンタクトプラグが設けられていることを特徴とする請求項１または２に記載の光検出装置。   3. The light detection device according to claim 1, further comprising a contact plug connected to the first semiconductor region and supplying a potential to the first semiconductor region. 前記第１半導体領域に供給される電位と前記第２半導体領域に供給される電位との電位差が、降伏電圧より大きくなるように構成されてことを特徴とする請求項１乃至３のいずれか１項に記載の光検出装置。   4. The device according to claim 1, wherein a potential difference between the potential supplied to the first semiconductor region and the potential supplied to the second semiconductor region is larger than a breakdown voltage. The light detection device according to item 5. 前記第１半導体領域に供給される電位と前記第２半導体領域に供給される電位との電位差が、降伏電圧以下となるように構成されていることを特徴とする請求項１乃至４のいずれか１項に記載の光検出装置。   The potential difference between the potential supplied to the first semiconductor region and the potential supplied to the second semiconductor region is configured to be equal to or less than the breakdown voltage. The light detection device according to item 1. 前記電極および前記第１半導体領域には６Ｖ以上の電位を供給し、前記第２半導体領域には０Ｖ以下の電位を供給することを特徴とする請求項１乃至５のいずれか１項に記載の光検出装置。   A potential of 6 V or more is supplied to the electrode and the first semiconductor region, and a potential of 0 V or less is supplied to the second semiconductor region. Light detection device. 前記第１半導体領域と前記誘電部材との間の距離が０．１μｍ以下であることを特徴とする請求項１乃至６のいずれか１項に記載の光検出装置。   The light detection device according to any one of claims 1 to 6, wherein a distance between the first semiconductor region and the dielectric member is 0.1 μm or less. 前記光電変換部は、アバランシェダイオードを構成することを特徴とする請求項１乃至７のいずれか１項に記載の光検出装置。   The said photoelectric conversion part comprises an avalanche diode, The light detection apparatus of any one of the Claims 1 thru | or 7 characterized by the above-mentioned. 前記埋め込み部は、
前記ＰＮ接合によって生じる空乏層領域よりも深い位置まで配されることを特徴とする請求項１乃至８のいずれか１項に記載の光検出装置。 The embedding unit is
The light detection device according to any one of claims 1 to 8, wherein the light detection device is disposed to a position deeper than a depletion layer region generated by the PN junction. 前記埋め込み部は、
前記第１面に対して最も深い位置に配された領域である底部と、
前記第２半導体領域と接する側面と、
前記底部および前記側面と連続した端部と、を有し、
前記底部および前記端部が、前記第１導電型の第３半導体領域に接していることを特徴とする請求項１乃至９のいずれか１項に記載の光検出装置。 The embedding unit is
A bottom portion which is an area disposed deepest with respect to the first surface;
A side surface in contact with the second semiconductor region;
And an end portion continuous with the bottom portion and the side surface,
The light detection device according to any one of claims 1 to 9, wherein the bottom portion and the end portion are in contact with the third semiconductor region of the first conductivity type. 前記埋め込み部は、前記第１面から前記第２面まで延在して配されることを特徴とする請求項１乃至１０のいずれか１項に記載の光検出装置。   The light detection device according to any one of claims 1 to 10, wherein the embedded portion is disposed to extend from the first surface to the second surface. 前記第２半導体領域は、前記第１面に対して深い位置から、浅い位置に向かって不純物濃度が薄くなる不純物濃度の勾配を有していることを特徴とする請求項１乃至１１のいずれか１項に記載の光検出装置。   12. The semiconductor device according to any one of claims 1 to 11, wherein the second semiconductor region has a gradient of impurity concentration in which the impurity concentration decreases toward the shallow position from a position deeper than the first surface. The light detection device according to item 1. 前記第２半導体領域は、
第１不純物濃度の領域である第１領域と、
前記第１面に対して前記第１領域よりも深い位置に配され、前記第１不純物濃度よりも低い第２不純物濃度の領域である第２領域と、
前記第１面に対して前記第１領域および前記第２領域よりも深い位置に配され、前記第１不純物濃度よりも低く、かつ、前記第２不純物濃度よりも高い第３不純物濃度である第３領域と、
を含むことを特徴とする請求項１乃至１２のいずれか１項に記載の光検出装置。 The second semiconductor region is
A first region which is a region of a first impurity concentration,
A second region, which is a region having a second impurity concentration lower than the first impurity concentration, disposed at a position deeper than the first region with respect to the first surface;
A third impurity concentration is provided at a position deeper than the first region and the second region with respect to the first surface, and has a third impurity concentration lower than the first impurity concentration and higher than the second impurity concentration 3 areas,
The light detection device according to any one of claims 1 to 12, further comprising: 前記第１半導体領域に供給される電位Ｖ１と、前記第２半導体領域に供給される電位Ｖ２と、前記電極に供給される電位Ｖｔと、前記第１半導体領域の仕事関数φ１と、前記第２半導体領域の仕事関数φ２と、前記電極の仕事関数φｔとは、前記信号電荷が電子の場合に数式Ａを満たし、前記信号電荷が正孔の場合に数式Ｂを満たすことを特徴とする請求項１乃至１３のいずれか１項に記載の光検出装置。
Ｖ２−φ２＜Ｖｔ−φｔ≦Ｖｔ−φｔ …数式Ａ
Ｖ２−φ２＞Ｖ１−φ１≧Ｖｔ−φｔ …数式Ｂ The potential V1 supplied to the first semiconductor region, the potential V2 supplied to the second semiconductor region, the potential Vt supplied to the electrode, the work function φ1 of the first semiconductor region, and the second The work function φ2 of the semiconductor region and the work function φt of the electrode satisfy Formula A when the signal charge is an electron, and Formula B when the signal charge is a hole. The light detection device according to any one of items 1 to 13.
V2−φ2 <Vt−φt ≦ Vt−φt Formula A
V2-φ2> V1-φ1φVt-φt Formula B 平面視において、
前記第２半導体領域は、第１領域と前記第１領域とは異なる第２領域とを有し、
前記第１半導体領域は、前記第１領域に内包されるように配され、
前記第１領域は、前記埋め込み部に内包されるように配され、
前記埋め込み部は、前記第２領域に内包されるように配されていることを特徴とする請求項１乃至１４のいずれか１項に記載の光検出装置。 In plan view,
The second semiconductor region has a first region and a second region different from the first region,
The first semiconductor region is disposed to be included in the first region,
The first region is disposed so as to be included in the embedding unit,
The light detection device according to any one of claims 1 to 14, wherein the embedded portion is disposed so as to be included in the second region. 平面視において、
前記第１半導体領域は凹部を有し、
前記第１半導体領域は、前記第２半導体領域に内包されるように配され、
前記埋め込み部は、前記第２半導体領域に内包されるように配され、
前記凹部に、前記第２半導体領域と前記埋め込み部の少なくとも一部とが配されていることを特徴とする請求項１乃至１４のいずれか１項に記載の光検出装置。 In plan view,
The first semiconductor region has a recess,
The first semiconductor region is disposed to be contained in the second semiconductor region,
The embedded portion is disposed to be included in the second semiconductor region,
The light detection device according to any one of claims 1 to 14, wherein the second semiconductor region and at least a part of the embedded portion are disposed in the recess. 平面視において、
前記第２半導体領域は、第１領域と前記第１領域とは異なる第２領域とを有し、
前記埋め込み部は、第１領域に内包されるように配され、
前記第１領域は、前記第１半導体領域に内包されるように配され
前記第１半導体領域は、前記第２領域に内包されるように配されていることを特徴とする請求項１乃至１４のいずれか１項に記載の光検出装置。 In plan view,
The second semiconductor region has a first region and a second region different from the first region,
The embedded portion is disposed to be included in the first region,
The first region is disposed so as to be included in the first semiconductor region, and the first semiconductor region is disposed so as to be included in the second region. The light detection device according to any one of the above. 前記第２半導体領域に電気的に接続され、前記第２導電型であって、前記第２半導体領域よりも不純物濃度の高い第４半導体領域が、前記第１面または前記第２面に接するように配されることを特徴とする請求項１乃至１７のいずれか１項に記載の光検出装置。 A fourth semiconductor region which is electrically connected to the second semiconductor region, has a second conductivity type, and has an impurity concentration higher than that of the second semiconductor region is in contact with the first surface or the second surface. The light detection device according to any one of claims 1 to 17, wherein the light detection device is arranged as follows. 前記誘電部材は、固定電荷を含む材料で構成されることを特徴とする請求項１乃至１８のいずれか１項に記載の光検出装置。   The light detection device according to any one of claims 1 to 18, wherein the dielectric member is made of a material including a fixed charge. 前記電極は、前記半導体基板に流れるアバランシェ電流に起因して発生する赤外光の少なくとも一部を吸収または反射する材料であることを特徴とする請求項１乃至１９のいずれか１項に記載の光検出装置。   The electrode according to any one of claims 1 to 19, wherein the electrode is a material that absorbs or reflects at least a part of infrared light generated due to an avalanche current flowing to the semiconductor substrate. Light detection device. 請求項１から２０のいずれか１項に記載の光検出装置を複数有する光検出システムであって
第１波長帯の光を前記第１波長帯と異なる第２波長帯の光に変換する波長変換部と、
前記光検出装置に保持された複数のデジタル信号から得られる複数の画像の合成処理を行う信号処理手段と、を有し、
前記波長変換部から出力された前記第２波長帯の光が前記光検出装置に入射するように構成されていることを特徴とする光検出システム。 21. A light detection system comprising a plurality of light detection devices according to any one of claims 1 to 20, wherein wavelength conversion is performed to convert light of a first wavelength band into light of a second wavelength band different from the first wavelength band. Department,
Signal processing means for synthesizing a plurality of images obtained from the plurality of digital signals held in the light detection device;
A light detection system characterized in that the light of the second wavelength band outputted from the wavelength conversion unit is incident on the light detection device. 請求項１から２０のいずれか１項に記載の光検出装置を有する光検出システムであって
前記光検出装置によって検出される光を発光する発光部と、
前記光検出装置に保持されたデジタル信号を用いて距離算出を行う距離算出手段と、を有することを特徴とする光検出システム。 21. A light detection system comprising the light detection device according to any one of claims 1 to 20, a light emitting unit configured to emit light detected by the light detection device;
And d) distance calculating means for calculating a distance using the digital signal held in the light detecting device.
JP2016150331A 2016-07-29 2016-07-29 Photodetection device and photodetection system Ceased JP2018019040A (en)

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JP2016150331A JP2018019040A (en) 2016-07-29 2016-07-29 Photodetection device and photodetection system
US15/656,490 US10497818B2 (en) 2016-07-29 2017-07-21 Photodetection device and photodetection system
CN201710628241.4A CN107665897B (en) 2016-07-29 2017-07-28 Light detection equipment and light detection system
US16/662,713 US11309442B2 (en) 2016-07-29 2019-10-24 Photodetection device and photodetection system

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