JP2018049999A - Electronic component and electronic component device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component in which the occurrence of cracks in an element body is suppressed. A multilayer capacitor C1 includes a body 3 and an external electrode 5. The element body 3 has a rectangular parallelepiped shape, and has a main surface 3a as a mounting surface and a side surface 3e adjacent to the main surface 3a. The external electrode 5 has an electrode portion 5a arranged on the main surface 3a and an electrode portion 5e arranged on the side surface 3e and connected to the electrode portion 5a. The electrode portion 5a has a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. The electrode portion 5e has a region 5e1 and a region 5e2. The region 5e2 is located closer to the main surface 3a than the region 5e1. Region 5e1 has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. Region 5e2 has a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. [Selection diagram] Fig. 5

Description

  The present invention relates to an electronic component and an electronic component device including the electronic component.

  There is known an electronic component that includes an element body and an external electrode disposed on the element body (see, for example, Patent Document 1). The element body has a main surface and a first side surface adjacent to the main surface. The external electrode has a first electrode portion disposed on the main surface and a second electrode portion disposed on the first side surface and connected to the first electrode portion. The main surface is a mounting surface facing an electronic device (for example, a circuit board or an electronic component) on which the electronic component is solder-mounted.

JP 58-175817 A

  An object of one aspect of the present invention is to provide an electronic component and an electronic component device in which the occurrence of cracks in the element body is suppressed.

  As a result of our research, the following matters were found. When the electronic component is solder-mounted on the electronic device, an external force that acts on the electronic component from the electronic device may act as stress on the element body from the solder fillet formed at the time of solder mounting through the external electrode. At this time, the stress tends to concentrate on the edge of the external electrode, particularly the edge of the first electrode portion located on the main surface that is the mounting surface. There is a risk of cracks in the body.

  An electronic component according to one aspect of the present invention has a rectangular parallelepiped shape, and has a main body that is a mounting surface and a first side surface adjacent to the main surface, and a main surface An external electrode having a first electrode portion disposed on the first electrode portion and a second electrode portion disposed on the first side surface and connected to the first electrode portion; The one electrode part has a sintered metal layer, a conductive resin layer formed on the sintered metal layer, and a plating layer formed on the conductive resin layer, and the second electrode part is sintered. A first region having a binder metal layer, a plated layer formed on the sintered metal layer, a sintered metal layer, a conductive resin layer formed on the sintered metal layer, and a conductive layer. A plating layer formed on the conductive resin layer, and a second region located closer to the main surface than the first region.

  In the electronic component according to the one aspect of the present invention, the first electrode portion disposed on the main surface has the conductive resin layer and the second electrode portion disposed on the first side surface. The second region has a conductive resin layer. For this reason, even when an external force acts on the electronic component through the solder fillet, it is difficult for stress to concentrate on the edge of the external electrode, and the edge is unlikely to be a starting point of a crack. Therefore, the generation of cracks in the element body is suppressed.

  The ratio of the length of the second region in the direction orthogonal to the first main surface to the length of the element body in the direction orthogonal to the main surface may be 0.2 or more. In this embodiment, the stress is less likely to concentrate due to the edge of the external electrode. Therefore, the generation of cracks in the element body is further suppressed.

  The element body further includes a second side surface adjacent to the main surface and the first side surface, and the external electrode is disposed on the second side surface and is connected to the first electrode unit and a third electrode unit. The third electrode portion has a third region having a sintered metal layer and a plating layer formed on the sintered metal layer, a sintered metal layer, and a sintered metal. A fourth region having a conductive resin layer formed on the layer and a plating layer formed on the conductive resin layer and located closer to the main surface than the third region; You may have. In the present embodiment, since the fourth region of the third electrode portion disposed on the second side surface has the conductive resin layer, the external electrode can be used even when the external electrode has the third electrode portion. It is difficult for stress to concentrate on the edge. Therefore, the occurrence of cracks in the element body is reliably suppressed.

  The ratio of the length of the fourth region in the direction orthogonal to the first main surface to the length of the element body in the direction orthogonal to the main surface may be 0.2 or more. In this embodiment, the stress is less likely to concentrate due to the edge of the external electrode. Therefore, the generation of cracks in the element body is further suppressed.

  An electronic component device according to an aspect of the present invention includes the electronic component and an electronic device having a pad electrode connected to an external electrode through a solder fillet, and the solder fillet is a second electrode. Formed in a first region and a second region.

  In the electronic component device according to one aspect of the present invention, the first electrode portion disposed on the main surface has the conductive resin layer and the second electrode portion disposed on the first side surface. The second region has a conductive resin layer. For this reason, even when an external force acts on the electronic component through the solder fillet, it is difficult for stress to concentrate on the edge of the external electrode, and the edge is unlikely to be a starting point of a crack. Therefore, the generation of cracks in the element body is suppressed.

  In the electronic component device according to this aspect, the solder fillet is formed not only in the second region of the second electrode part but also in the first region. In the electronic component device according to this aspect, since the area where the solder fillet is formed is wider than the configuration where the solder fillet is formed only in the second area of the second electrode portion, the mounting strength of the electronic component is high. It is secured.

  According to each aspect of the present invention, it is possible to provide an electronic component and an electronic component device in which the occurrence of cracks in the element body is suppressed.

1 is a plan view of a multilayer capacitor according to a first embodiment. 1 is a plan view of a multilayer capacitor according to a first embodiment. 1 is a side view of a multilayer capacitor according to a first embodiment. 1 is a side view of a multilayer capacitor according to a first embodiment. It is a figure for demonstrating the cross-sectional structure of the multilayer capacitor which concerns on 1st Embodiment. It is a figure for demonstrating the cross-sectional structure of the multilayer capacitor which concerns on 1st Embodiment. It is a top view of the multilayer capacitor which concerns on the modification of 1st Embodiment. It is a top view of the multilayer capacitor which concerns on the modification of 1st Embodiment. It is a side view of the multilayer capacitor concerning this modification. It is a side view of the multilayer capacitor concerning this modification. It is a top view of the multilayer feedthrough capacitor concerning a 2nd embodiment. It is a top view of the multilayer feedthrough capacitor concerning a 2nd embodiment. It is a side view of the multilayer feedthrough capacitor concerning a 2nd embodiment. It is a side view of the multilayer feedthrough capacitor concerning a 2nd embodiment. It is a figure for demonstrating the cross-sectional structure of the multilayer feedthrough capacitor which concerns on 2nd Embodiment. It is a figure for demonstrating the cross-sectional structure of the multilayer feedthrough capacitor which concerns on 2nd Embodiment. It is a figure for demonstrating the cross-sectional structure of the multilayer feedthrough capacitor which concerns on 2nd Embodiment. It is a top view of the multilayer capacitor concerning a 3rd embodiment. It is a top view of the multilayer capacitor concerning a 3rd embodiment. It is a side view of the multilayer capacitor concerning a 3rd embodiment. It is a side view of the multilayer capacitor concerning a 3rd embodiment. It is a figure for demonstrating the cross-sectional structure of the external electrode with which the multilayer capacitor which concerns on 3rd Embodiment is provided. It is a top view of the multilayer capacitor concerning a 4th embodiment. It is a top view of the multilayer capacitor concerning a 4th embodiment. It is a side view of the multilayer capacitor concerning a 4th embodiment. It is a side view of the multilayer capacitor concerning a 4th embodiment. It is a figure for demonstrating the cross-sectional structure of the external electrode with which the multilayer capacitor which concerns on 4th Embodiment is provided. It is a top view of the multilayer feedthrough capacitor concerning a 5th embodiment. It is a side view of the multilayer feedthrough capacitor according to the fifth embodiment. It is a figure for demonstrating the cross-sectional structure of the multilayer feedthrough capacitor which concerns on 5th Embodiment. It is a figure for demonstrating the cross-sectional structure of the multilayer feedthrough capacitor which concerns on 5th Embodiment. It is a figure for demonstrating the cross-sectional structure of the multilayer feedthrough capacitor which concerns on 5th Embodiment. It is a top view of the multilayer penetration capacitor concerning the modification of a 5th embodiment. It is a top view of the multilayer feedthrough capacitor concerning this modification. It is a side view of the multilayer feedthrough capacitor concerning this modification. It is a figure for demonstrating the cross-sectional structure of the electronic component apparatus which concerns on 6th Embodiment. It is a side view of the multilayer capacitor which concerns on the modification of 1st Embodiment. It is a side view of the multilayer capacitor which concerns on the modification of 1st Embodiment. It is a side view of the multilayer feedthrough capacitor concerning the modification of 2nd Embodiment. It is a side view of the multilayer feedthrough capacitor concerning the modification of 2nd Embodiment. It is a top view of the multilayer penetration capacitor concerning the modification of a 2nd embodiment.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

(First embodiment)
With reference to FIGS. 1-6, the structure of the multilayer capacitor C1 which concerns on 1st Embodiment is demonstrated. 1 and 2 are plan views of the multilayer capacitor in accordance with the first embodiment. 3 and 4 are side views of the multilayer capacitor in accordance with the first embodiment. 5 and 6 are diagrams for explaining a cross-sectional configuration of the multilayer capacitor in accordance with the first embodiment. In the first embodiment, a multilayer capacitor C1 will be described as an example of an electronic component.

  As shown in FIGS. 1 to 4, the multilayer capacitor C <b> 1 includes an element body 3 having a rectangular parallelepiped shape and a pair of external electrodes 5 disposed on the outer surface of the element body 3. . The pair of external electrodes 5 are separated from each other. The rectangular parallelepiped shape includes a rectangular parallelepiped shape in which corners and ridges are chamfered, and a rectangular parallelepiped shape in which corners and ridges are rounded.

  The element body 3 has, as its outer surface, a pair of rectangular main surfaces 3a and 3b facing each other, a pair of rectangular side surfaces 3c facing each other, and a pair of side surfaces 3e facing each other. And have. The direction in which the pair of main surfaces 3a and 3b are opposed is the first direction D1, the direction in which the pair of side surfaces 3c is opposed is the second direction D2, and the direction in which the pair of side surfaces 3e is opposed. It is the third direction D3.

  The first direction D1 is a direction orthogonal to the main surfaces 3a and 3b, and is orthogonal to the second direction D2. The third direction D3 is a direction parallel to the main surfaces 3a and 3b and the side surfaces 3c, and is orthogonal to the first direction D1 and the second direction D2. In the first embodiment, the length of the element body 3 in the third direction D3 is larger than the length of the element body 3 in the first direction D1 and larger than the length of the element body 3 in the second direction D2. The third direction D3 is the longitudinal direction of the element body 3.

  The pair of side surfaces 3c extends in the first direction D1 so as to connect the pair of main surfaces 3a and 3b. The pair of side surfaces 3c also extends in the third direction D3. The pair of side surfaces 3e extends in the first direction D1 so as to connect the pair of main surfaces 3a and 3b. The pair of side surfaces 3e also extends in the second direction D2. Each main surface 3a, 3b is adjacent to the pair of side surfaces 3c and the first side surface 3e.

The element body 3 is configured by laminating a plurality of dielectric layers in a direction (first direction D1) in which the pair of main surfaces 3a and 3b are opposed to each other. In the element body 3, the stacking direction of the plurality of dielectric layers coincides with the second direction D2. Each dielectric layer is made of a sintered body of a ceramic green sheet containing a dielectric material (dielectric ceramic such as BaTiO ₃ series, Ba (Ti, Zr) O ₃ series, or (Ba, Ca) TiO ₃ series), for example. It is configured. In the actual element body 3, the dielectric layers are integrated so that the boundary between the dielectric layers is not visible. In the element body 3, the stacking direction of the plurality of dielectric layers may coincide with the second direction D2.

  As shown in FIGS. 5 and 6, the multilayer capacitor C1 includes a plurality of internal electrodes 7 and 9, respectively. The internal electrodes 7 and 9 are made of a conductive material that is normally used as an internal electrode of a laminated electric element. As the conductive material, a base metal (for example, Ni or Cu) is used. The internal electrodes 7 and 9 are configured as a sintered body of a conductive paste containing the conductive material. In the first embodiment, the internal electrodes 7 and 9 are made of Ni.

  The internal electrode 7 and the internal electrode 9 are arranged at different positions (layers) in the first direction D1. That is, the internal electrodes 7 and the internal electrodes 9 are alternately arranged in the element body 3 so as to face each other with a gap in the first direction D1. The internal electrode 7 and the internal electrode 9 have different polarities. When the stacking direction of the plurality of dielectric layers is the second direction D2, the internal electrode 7 and the internal electrode 9 are arranged at different positions (layers) in the second direction D2. One end portions of the internal electrodes 7 and 9 are exposed at the corresponding side surface 3e.

  The external electrodes 5 are disposed on the side surface 3e side of the element body 3, that is, at the end of the element body 3 in the third direction D3. The external electrode 5 includes an electrode portion 5a disposed on the main surface 3a, an electrode portion 5b disposed on the main surface 3b, an electrode portion 5c disposed on the pair of side surfaces 3c, and a corresponding side surface 3e. It has the electrode part 5e arrange | positioned. The external electrode 5 is formed on five surfaces including a pair of main surfaces 3a and 3b, a pair of side surfaces 3c, and one side surface 3e. Adjacent electrode portions 5a, 5b, 5c and 5e are connected at the ridge portion of the element body 3 and are electrically connected.

  The electrode portion 5e disposed on the side surface 3e covers all the one end portions exposed to the side surface 3e of the corresponding internal electrodes 7 and 9. The internal electrodes 7 and 9 are directly connected to the corresponding electrode part 5e. The internal electrodes 7 and 9 are electrically connected to the corresponding external electrode 5.

  As shown in FIGS. 5 and 6, the external electrode 5 includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. The fourth electrode layer E4 constitutes the outermost layer of the external electrode 5.

  The electrode part 5a has a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the electrode part 5a has a four-layer structure. In the electrode portion 5a, the entire first electrode layer E1 is covered with the second electrode layer E2. The electrode portion 5b has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The electrode part 5b does not have the second electrode layer E2. That is, the electrode part 5b has a three-layer structure.

Electrode unit 5c, and a region 5c ₁ and region 5c _2. The region 5c ₂ is located closer to the main surface 3a than the region 5c ₁ . The region 5c ₁ has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. Region 5c ₁ does not have a second electrode layer E2. That is, regions 5c ₁ is a three-layer structure. The region 5c ₂ includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, regions 5c ₂ is a four-layer structure.

Electrode unit 5e, and a region 5e ₁ and region 5e _2. The region 5e ₂ is located closer to the main surface 3a than the region 5e ₁ . The region 5e ₁ has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The region 5e ₁ does not have the second electrode layer E2. That is, the region 5e ₁ has a three-layer structure. The region 5e ₂ includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the region 5e ₂ has a four-layer structure.

  The first electrode layer E1 is formed by applying a conductive paste to the surface of the element body 3 and baking it. The first electrode layer E1 is a sintered metal layer formed by sintering a metal component (metal powder) contained in the conductive paste. That is, the first electrode layer E1 is a sintered metal layer formed on the element body 3. In the present embodiment, the first electrode layer E1 is a sintered metal layer made of Cu. The first electrode layer E1 may be a sintered metal layer made of Ni. Thus, the first electrode layer E1 contains a base metal. As the conductive paste, a powder made of Cu or Ni mixed with a glass component, an organic binder, and an organic solvent is used.

The second electrode layer E2 is formed by curing the conductive resin applied on the first electrode layer E1. The second electrode layer E2 is formed so as to cover a part of the first electrode layer E1 (a region corresponding to the electrode portion 5a, the region 5c _{2 of} the electrode portion 5c, and the region 5e ₂ of the electrode portion 5e). Yes. The first electrode layer E1 is also a base metal layer for forming the second electrode layer E2. The second electrode layer E2 is a conductive resin layer formed on the first electrode layer E1. As the conductive resin, a thermosetting resin mixed with a metal powder and an organic solvent is used. As the metal powder, for example, Ag powder or Cu powder is used. As the thermosetting resin, for example, a phenol resin, an acrylic resin, a silicone resin, an epoxy resin, or a polyimide resin is used.

  The third electrode layer E3 is formed by plating on the second electrode layer E2 and on the region of the first electrode layer E1 exposed from the second electrode layer E2. In the present embodiment, the third electrode layer E3 is a Ni plating layer formed by Ni plating on the second electrode layer E2 and on the region exposed from the second electrode layer E2 of the first electrode layer E1. is there. The third electrode layer E3 may be a Sn plating layer, a Cu plating layer, or an Au plating layer. As described above, the third electrode layer E3 contains Ni, Sn, Cu, or Au.

  The fourth electrode layer E4 is formed on the third electrode layer E3 by a plating method. In the present embodiment, the fourth electrode layer E4 is an Sn plating layer formed by Sn plating on the third electrode layer E3. The fourth electrode layer E4 may be a Cu plating layer or an Au plating layer. As described above, the fourth electrode layer E4 includes Sn, Cu, or Au. The third electrode layer E3 and the fourth electrode layer E4 constitute a plating layer formed on the second electrode layer E2. That is, in this embodiment, the plating layer formed in the second electrode layer E2 has a two-layer structure.

  The first electrode layer E1 included in each of the electrode portions 5a, 5b, 5c, and 5e is integrally formed. The second electrode layer E2 included in each of the electrode portions 5a, 5c, and 5e is integrally formed. The third electrode layer E3 included in each of the electrode portions 5a, 5b, 5c, and 5e is integrally formed. The fourth electrode layer E4 included in each of the electrode portions 5a, 5b, 5c, and 5e is also integrally formed.

To the length L1 in the first direction D1 of the element body 3, the ratio of the length L2 in the first direction D1 of the region 5c ₂ (L2 / L1) is 0.2 or more. To the length L1 of the element body 3, the ratio of the length L3 in the first direction D1 of the region 5e ₂ (L3 / L1) is 0.2 or more.

  The multilayer capacitor C1 is solder-mounted on an electronic device (for example, a circuit board or an electronic component). In the multilayer capacitor C1, the main surface 3a is a mounting surface facing the electronic device.

As described above, in the first embodiment, the electrode portions 5a the second electrode layer E2 together have (conductive resin layers), the region 5e ₂ of the electrode portions 5e the second electrode layer E2 (conductive resin Layer). For this reason, even when an external force acts on the multilayer capacitor C1 through the solder fillet, the stress is unlikely to concentrate on the edge of the external electrode 5, and the edge is unlikely to become a starting point of the crack. Therefore, in the multilayer capacitor C1, the occurrence of cracks in the element body 3 is suppressed.

In the first embodiment, since the region 5c ₂ of the electrode portions 5c has a second electrode layer E2 (conductive resin layer), even if the external electrode 5 has an electrode portion 5c, the outer electrode 5 It is difficult for stress to concentrate on the edge. Therefore, in the multilayer capacitor C1, the occurrence of cracks in the element body 3 is reliably suppressed.

To the length L1 of the element body 3, the ratio of the length L3 of the region 5e ₂ (L3 / L1) is 0.2 or more. Thereby, the stress is less likely to be concentrated on the edge of the external electrode 5. Therefore, in the multilayer capacitor C1, the generation of cracks in the element body 3 is further suppressed.

To the length L1 of the element body 3, the ratio of the length L2 of the region 5c ₂ (L2 / L1) is 0.2 or more. This also makes it more difficult for stress to concentrate on the edge of the external electrode 5. Therefore, in the multilayer capacitor C1, the generation of cracks in the element body 3 is further suppressed.

  Next, the configuration of the multilayer capacitor C2 according to another modification of the first embodiment will be described with reference to FIGS. 7 and 8 are plan views of the multilayer capacitor in accordance with this modification. 9 and 10 are side views of the multilayer capacitor in accordance with this modification.

  Similar to the multilayer capacitor C1, the multilayer capacitor C2 includes an element body 3, a pair of external electrodes 5, a plurality of internal electrodes 7, and a plurality of internal electrodes 9 (not shown). In the multilayer capacitor C2, the shape of the element body 3 is different from that of the multilayer capacitor C1.

  In this modification, the length of the element body 3 in the second direction D2 is larger than the length of the element body 3 in the first direction D1 and larger than the length of the element body 3 in the third direction D3. The second direction D2 is the longitudinal direction of the element body 3. Even in this modification, the generation of cracks in the element body 3 is suppressed.

(Second Embodiment)
With reference to FIGS. 11-17, the structure of the multilayer feedthrough capacitor C3 which concerns on 2nd Embodiment is demonstrated. 11 and 12 are plan views of the multilayer feedthrough capacitor according to the second embodiment. 13 and 14 are side views of the multilayer feedthrough capacitor according to the second embodiment. 15 to 17 are views for explaining a cross-sectional configuration of the multilayer feedthrough capacitor according to the second embodiment. In the second embodiment, a multilayer feedthrough capacitor C3 will be described as an example of an electronic component.

  As shown in FIGS. 11 to 14, the multilayer feedthrough capacitor C <b> 3 includes an element body 3, a pair of external electrodes 13 and a pair of external electrodes 15 disposed on the outer surface of the element body 3. The pair of external electrodes 13 and the pair of external electrodes 15 are separated from each other. The pair of external electrodes 13 function as signal terminal electrodes, for example, and the pair of external electrodes 15 function as ground terminal electrodes, for example.

  The multilayer feedthrough capacitor C3 includes a plurality of internal electrodes 17 and 19, respectively, as shown in FIGS. Like the internal electrodes 7 and 9, the internal electrodes 17 and 19 are made of a conductive material that is normally used as an internal electrode of a laminated electric element. Also in the second embodiment, the internal electrodes 17 and 19 are made of Ni.

  The internal electrode 17 and the internal electrode 19 are disposed at different positions (layers) in the first direction D1. That is, the internal electrodes 17 and the internal electrodes 19 are alternately arranged in the element body 3 so as to face each other with a gap in the first direction D1. The internal electrode 17 and the internal electrode 19 have different polarities. When the stacking direction of the plurality of dielectric layers is the second direction D2, the internal electrode 17 and the internal electrode 19 are arranged at different positions (layers) in the second direction D2. The ends of the internal electrodes 17 are exposed on the pair of side surfaces 3e. The ends of the internal electrodes 19 are exposed on the pair of side surfaces 3c.

  The external electrode 13 is disposed at the end of the element body 3 in the third direction D3. The external electrode 13 includes an electrode portion 13a disposed on the main surface 3a, an electrode portion 13b disposed on the main surface 3b, an electrode portion 13c disposed on the pair of side surfaces 3c, and a corresponding side surface 3e. The electrode part 13e arrange | positioned in this. The external electrode 13 is formed on five surfaces including a pair of main surfaces 3a and 3b, a pair of side surfaces 3c, and one side surface 3e. The adjacent electrode portions 13a, 13b, 13c, and 13e are connected at the ridge portion of the element body 3, and are electrically connected.

  The electrode portion 13e disposed on the side surface 3e covers all the end portions exposed to the side surface 3e of the internal electrode 17. The internal electrode 17 is directly connected to each electrode part 13e. The internal electrode 17 is electrically connected to the pair of external electrodes 13.

  As shown in FIGS. 15 and 16, the external electrode 13 includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. The fourth electrode layer E4 constitutes the outermost layer of the external electrode 13.

  The electrode portion 13a includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the electrode part 13a has a four-layer structure. In the electrode portion 13a, the entire first electrode layer E1 is covered with the second electrode layer E2. The electrode portion 13b has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The electrode part 13b does not have the second electrode layer E2. That is, the electrode part 13b has a three-layer structure.

Electrode section 13c, and a region 13c ₁ and the region 13c _2. The region 13c ₂ is located closer to the main surface 3a than the region 13c ₁ . The region 13c ₁ has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The region 13c ₁ does not have the second electrode layer E2. That is, the region 13c ₁ has a three-layer structure. The region 13c ₂ includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the region 13c ₂ is a four-layer structure.

Electrode unit 13e, and a region 13e ₁ and region 13e _2. The region 13e ₂ is located closer to the main surface 3a than the region 13e ₁ . The region 13e ₁ has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The region 13e ₁ does not have the second electrode layer E2. That is, the region 13e ₁ has a three-layer structure. The region 13e ₂ includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the region 13e ₂ has a four-layer structure.

To the length L1 of the element body 3, the ratio of the length L4 in the first direction D1 of the region 13c ₂ (L4 / L1) is 0.2 or more. To the length L1 of the element body 3, the ratio of the length L5 in the first direction D1 of the region 13e ₂ (L5 / L1) is 0.2 or more.

  The first electrode layer E1 included in each of the electrode portions 13a, 13b, 13c, and 13e is integrally formed. The second electrode layer E2 included in each of the electrode portions 13a, 13c, and 13e is integrally formed. The third electrode layer E3 included in each of the electrode portions 13a, 13b, 13c, and 13e is integrally formed. The fourth electrode layer E4 included in each electrode portion 13a, 13b, 13c, 13e is also integrally formed.

  The external electrode 15 is disposed at the central portion of the element body 3 in the third direction D3. The external electrode 15 has an electrode portion 15a disposed on the main surface 3a, an electrode portion 15b disposed on the main surface 3b, and an electrode portion 15c disposed on the side surface 3c. The external electrode 15 is formed on three surfaces of a pair of main surfaces 3a and 3b and one side surface 3c. The adjacent electrode portions 15a, 15b, and 15c are connected at the ridge portion of the element body 3, and are electrically connected.

  The electrode portion 15 c disposed on the side surface 3 c covers all the end portions exposed to the side surface 3 c of the internal electrode 19. The internal electrode 19 is directly connected to each electrode portion 15c. The internal electrode 19 is electrically connected to the pair of external electrodes 15.

  As shown in FIG. 17, the external electrode 15 also includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. The fourth electrode layer E4 constitutes the outermost layer of the external electrode 15.

  The electrode portion 15a includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the electrode part 15a has a four-layer structure. In the electrode portion 15a, the entire first electrode layer E1 is covered with the second electrode layer E2. The electrode portion 15b has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The electrode portion 15b does not have the second electrode layer E2. That is, the electrode part 15b has a three-layer structure.

Electrode unit 15c, and a region 15c ₁ and the region 15c _2. The region 15c ₂ is located closer to the main surface 3a than the region 15c ₁ . The region 15c ₁ has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The region 15c ₁ does not have the second electrode layer E2. That is, the region 15c ₁ has a three-layer structure. The region 15c ₂ includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the region 15c ₂ has a four-layer structure.

To the length L1 of the element body 3, the ratio of the length L6 in the first direction D1 of the region 15c ₂ (L6 / L1) is 0.2 or more. The first electrode layer E1 included in each of the electrode portions 15a, 15b, and 15c is integrally formed. The second electrode layer E2 included in each of the electrode portions 15a and 15c is integrally formed. The third electrode layer E3 included in each of the electrode portions 15a, 15b, and 15c is integrally formed. The fourth electrode layer E4 included in each of the electrode portions 15a, 15b, and 15c is also integrally formed.

  The multilayer feedthrough capacitor C3 is also solder-mounted on the electronic device. In the multilayer feedthrough capacitor C3, the main surface 3a is a mounting surface facing the electronic device.

As described above, in the second embodiment, the electrode portions 13a and 15a have the second electrode layer E2 (conductive resin layer), and the regions 13c ₂ and 15c ₂ of the electrode portions 13c and 15c are second. It has an electrode layer E2 (conductive resin layer). For this reason, even when an external force acts on the multilayer feedthrough capacitor C3 through the solder fillet, the stress is unlikely to concentrate on the edge of the external electrodes 13 and 15, and the edge is unlikely to become a starting point of the crack. Therefore, in the multilayer feedthrough capacitor C3, the occurrence of cracks in the element body 3 is suppressed.

To the length L1 of the element body 3, the ratio of the length L5 region 13e ₂ (L5 / L1) is 0.2 or more. Thereby, the stress is less likely to be concentrated on the edge of the external electrode 13. Therefore, in the multilayer feedthrough capacitor C3, generation of cracks in the element body 3 is further suppressed.

To the length L1 of the element body 3, the ratio of the length L4 region 13c ₂ (L4 / L1) is 0.2 or more. This also makes it difficult for stress to concentrate on the edge of the external electrode 13. Therefore, in the multilayer feedthrough capacitor C3, generation of cracks in the element body 3 is further suppressed.

In the second embodiment, to the length L1 of the element body 3, the ratio of the length L6 region 15c ₂ (L6 / L1) is 0.2 or more. Thereby, the stress is less likely to be concentrated on the edge of the external electrode 15. Therefore, in the multilayer feedthrough capacitor C3, generation of cracks in the element body 3 is further suppressed.

(Third embodiment)
With reference to FIGS. 18-22, the structure of the multilayer capacitor C4 concerning 3rd Embodiment is demonstrated. 18 and 19 are plan views of the multilayer capacitor in accordance with the third embodiment. 20 and 21 are side views of the multilayer capacitor in accordance with the third embodiment. FIG. 22 is a diagram for explaining a cross-sectional configuration of the external electrode. In the third embodiment, a multilayer capacitor C4 will be described as an example of an electronic component.

  As shown in FIGS. 18 to 21, the multilayer capacitor C <b> 4 includes the element body 3, a plurality of external electrodes 21, and a plurality of internal electrodes (not shown). The plurality of external electrodes 21 are disposed on the outer surface of the element body 3 and are separated from each other. In the present embodiment, the multilayer capacitor C4 has eight external electrodes 21. The number of external electrodes 21 is not limited to eight.

  Each external electrode 21 has an electrode portion 21a disposed on the main surface 3a, an electrode portion 21b disposed on the main surface 3b, and an electrode portion 21c disposed on the side surface 3c. . The external electrode 21 is formed on three surfaces of a pair of main surfaces 3a and 3b and one side surface 3c. The adjacent electrode portions 21a, 21b, and 21c are connected at the ridge portion of the element body 3, and are electrically connected.

  The electrode portion 21c arranged on the side surface 3c covers all the end portions exposed to the side surface 3c of the corresponding internal electrode. The electrode portion 21c is directly connected to the corresponding internal electrode. The external electrode 21 is electrically connected to the corresponding internal electrode.

  As shown in FIG. 22, the external electrode 21 includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. The fourth electrode layer E4 constitutes the outermost layer of the external electrode 21.

  The electrode portion 21a includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the electrode part 21a has a four-layer structure. In the electrode portion 21a, the entire first electrode layer E1 is covered with the second electrode layer E2. The electrode portion 21b includes a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The electrode part 21b does not have the second electrode layer E2. That is, the electrode part 21b has a three-layer structure.

Electrode section 21c, and a region 21c ₁ and the region 21c _2. The region 21c ₂ is located closer to the main surface 3a than the region 21c ₁ . The region 21c ₁ has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The region 21c ₁ does not have the second electrode layer E2. That is, regions 21c ₁ is a three-layer structure. The region 21c ₂ includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the region 21c ₂ has a four-layer structure.

To the length L1 of the element body 3, the ratio of the length L7 in the first direction D1 of the region 21c ₂ (L7 / L1) is 0.2 or more. The first electrode layer E1 included in each of the electrode portions 21a, 21b, and 21c is integrally formed. The second electrode layer E2 included in each of the electrode portions 21a and 21c is integrally formed. The third electrode layer E3 included in each of the electrode portions 21a, 21b, and 21c is integrally formed. The fourth electrode layer E4 included in each of the electrode portions 21a, 21b, and 21c is also integrally formed.

  The multilayer capacitor C4 is also solder-mounted on the electronic device. In the multilayer capacitor C4, the main surface 3a is a mounting surface facing the electronic device.

Thus, in the third embodiment, the electrode portion 21a the second electrode layer E2 together have (conductive resin layer), a region 21c ₂ of the electrode portion 21c is the second electrode layer E2 (conductive resin Layer). For this reason, even when an external force acts on the multilayer capacitor C4 through the solder fillet, stress is unlikely to concentrate on the edge of the external electrode 21, and the edge is unlikely to become a starting point of a crack. Therefore, in the multilayer capacitor C4, the occurrence of cracks in the element body 3 is suppressed.

To the length L1 of the element body 3, the ratio of the length L4 region 21c ₂ (L7 / L1) is 0.2 or more. This also makes it more difficult for stress to concentrate on the edge of the external electrode 21. Therefore, in the multilayer capacitor C4, the occurrence of cracks in the element body 3 is further suppressed.

(Fourth embodiment)
With reference to FIGS. 23 to 27, the structure of the multilayer capacitor C5 in accordance with the fourth embodiment will be explained. 23 and 24 are plan views of the multilayer capacitor in accordance with the fourth embodiment. 25 and 26 are side views of the multilayer capacitor in accordance with the fourth embodiment. FIG. 27 is a diagram for explaining a cross-sectional configuration of the external electrode. In the fourth embodiment, a multilayer capacitor C5 will be described as an example of an electronic component.

  As shown in FIGS. 23 to 26, the multilayer capacitor C5 includes an element body 3, a plurality of external electrodes 31, and a plurality of internal electrodes (not shown). The plurality of external electrodes 31 are disposed on the outer surface of the element body 3 and are separated from each other. In the present embodiment, the multilayer capacitor C <b> 5 has four external electrodes 31.

  The length of the element body 3 in the first direction D1 is smaller than the length of the element body 3 in the second direction D2, and smaller than the length of the element body 3 in the third direction D3. The length of the element body 3 in the second direction D2 is equal to the length of the element body 3 in the third direction D3.

  Each external electrode 31 is disposed at each corner of the element body 3. Each external electrode 31 is disposed on the electrode portion 31a disposed on the main surface 3a, the electrode portion 31b disposed on the main surface 3b, the electrode portion 31c disposed on the side surface 3c, and the side surface 3e. The electrode portion 31e is provided. The external electrode 31 is formed on the four surfaces of a pair of main surfaces 3a and 3b, one side surface 3c, and one side surface 3e. The electrode portions 31a, 31b, 31c, 31e adjacent to each other are connected at the ridge portion of the element body 3, and are electrically connected.

  The electrode portions 31c and 31e disposed on the side surface 3c and the side surface 3e cover all the end portions exposed to the side surface 3c and the side surface 3e of the corresponding internal electrode. The electrode portions 31c and 31e are directly connected to corresponding internal electrodes. The external electrode 31 is electrically connected to the corresponding internal electrode.

  As shown in FIGS. 27A and 27B, the external electrode 31 includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. . The fourth electrode layer E4 constitutes the outermost layer of the external electrode 31.

  The electrode part 31a has a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the electrode part 31a has a four-layer structure. In the electrode portion 31a, the entire first electrode layer E1 is covered with the second electrode layer E2. The electrode part 31b has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The electrode part 31b does not have the second electrode layer E2. That is, the electrode part 31b has a three-layer structure.

Electrode portion 31c has a region 31c ₁ and the region 31c _2. The region 31c ₂ is located closer to the main surface 3a than the region 31c ₁ . The region 31c ₁ has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The region 31c ₁ does not have the second electrode layer E2. That is, the region 31c ₁ has a three-layer structure. The region 31c ₂ includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the region 31c ₂ has a four-layer structure.

Electrode portion 31e includes a region 31e ₁ and region 31e _2. The region 31e ₂ is located closer to the main surface 3a than the region 31e ₁ . The region 31e ₁ has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. The region 31e ₁ does not have the second electrode layer E2. That is, the region 31e ₁ has a three-layer structure. The region 31e ₂ includes a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4. That is, the region 31e ₂ has a four-layer structure.

To the length L1 of the element body 3, the ratio of the length L8 in the first direction D1 of the region 31c ₂ (L8 / L1) is 0.2 or more. To the length L1 of the element body 3, the ratio of the length L9 in the first direction D1 of the region 31e ₂ (L9 / L1) is 0.2 or more.

  The first electrode layer E1 included in each electrode portion 31a, 31b, 31c, 31e is integrally formed. The second electrode layer E2 included in each of the electrode portions 31a, 31c, and 31e is integrally formed. The third electrode layer E3 included in each of the electrode portions 31a, 31b, 31c, and 31e is integrally formed. The fourth electrode layer E4 included in each electrode portion 31a, 31b, 31c, 31e is also integrally formed.

  The multilayer capacitor C5 is also solder-mounted on the electronic device. In the multilayer capacitor C5, the main surface 3a is a mounting surface facing the electronic device.

As described above, in the fourth embodiment, the electrode portion 31a has the second electrode layer E2 (conductive resin layer), and the regions 31c ₂ and 31e ₂ of the electrode portions 31c and 31e are the second electrode layer. It has E2 (conductive resin layer). For this reason, even when an external force acts on the multilayer capacitor C5 through the solder fillet, stress is unlikely to concentrate on the edge of the external electrode 31, and the edge is unlikely to become a starting point of a crack. Therefore, in the multilayer capacitor C5, the occurrence of cracks in the element body 3 is suppressed.

To the length L1 of the element body 3, with a ratio of length L8 region 31c ₂ (L8 / L1) is 0.2 or more, the ratio of the length L1 of the element body 3, in the region 31e ₂ of the length L9 (L9 / L1) is 0.2 or more. For this reason, the stress is less likely to concentrate on the edge of the external electrode 31. Therefore, in the multilayer capacitor C5, the occurrence of cracks in the element body 3 is further suppressed.

(Fifth embodiment)
With reference to FIGS. 28 to 32, the structure of the multilayer feedthrough capacitor C6 according to the fifth embodiment will be described. FIG. 28 is a plan view of the multilayer through capacitor according to the fifth embodiment. FIG. 29 is a side view of the multilayer through capacitor according to the fifth embodiment. 30 to 32 are views for explaining a cross-sectional configuration of the multilayer feedthrough capacitor according to the fifth embodiment. In the fifth embodiment, a multilayer feedthrough capacitor C6 will be described as an example of an electronic component.

  As shown in FIGS. 28 and 29, the multilayer feedthrough capacitor C6 includes an element body 3, a pair of external electrodes 13, a pair of external electrodes 15, a plurality of internal electrodes 17, and a plurality of internal electrodes 19. Yes. The multilayer feedthrough capacitor C6 is also solder-mounted on the electronic device. In the multilayer feedthrough capacitor C6, the main surface 3a is a mounting surface facing the electronic device.

  As shown in FIGS. 30 and 31, the external electrode 13 has a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4. In the multilayer feedthrough capacitor C6, the external electrode 13 does not have the second electrode layer E2. The electrode part 13a, the electrode part 13c, and the electrode part 13e have a first electrode layer E1, a third electrode layer E3, and a fourth electrode layer E4, and each has a four-layer structure. The fourth electrode layer E4 constitutes the outermost layer of the external electrode 13.

  As shown in FIG. 32, the external electrode 15 has a first electrode layer E1, a second electrode layer E2, a third electrode layer E3, and a fourth electrode layer E4, as in the multilayer feedthrough capacitor C3.

  The multilayer feedthrough capacitor C6 includes a pair of insulating films I. The insulating film I is made of an electrically insulating material (for example, insulating resin or glass). In the present embodiment, the insulating film I is made of an insulating resin such as an epoxy resin.

Insulating film I along the edges 13c _e edge 13a _e and the electrode portion 13c of the electrode portions 13a, and covers a part of the portion of the external electrode 13 and the body 3. The electrode portion 13b, the electrode portion 13e, and the main surface 3b are not covered with the insulating film I.

Insulating film I, a part of the edge 13a _e and edge 13c _e along the (main surface 3a side of the portion in the first direction D1) only, only a portion of the edge 13a _e and the edge 13c _e And the main surface 3a and the side surface 3c are continuously covered. The insulating film I is located on the film portion Ia located on the electrode portion 13a, the film portion Ib located on the electrode portion 13c, the film portion Ic located on the main surface 3a, and the side surface 3c. The film portion Id is formed. Each film part Ia, Ib, Ic, Id is formed integrally.

The surface of the electrode portion 13 a has a region covered with the insulating film I (film portion Ia) along the edge 13 a _e and a region exposed from the insulating film I. The region exposed from the insulating film I is located closer to the side surface 3e than the region covered with the film portion Ia. The surface of the electrode portion 13c has a region covered with an insulating film I (membrane portion Ib) along the edge 13c _e, and a region exposed from the insulating film I.

The main surface 3a has a region covered with an insulating film I (membrane portion Ic) along the edge 13a _e, and a region exposed from the insulating film I. Side 3c has a region covered with an insulating film I (membrane portion Id) along the edge 13c _e, and a region exposed from the insulating film I.

  In the fifth embodiment, the ratio (L11 / L1) of each length L11 in the first direction D1 between the film part Ib and the film part Id to the length L1 of the element body 3 is 0.1 or more and 0.4. It is as follows. The ratio (L13 / L12) of the length L13 in the third direction D3 of the film portion Ia to the length L12 in the third direction D3 of the electrode portion 13a is 0.3 or more.

As described above, in the fifth embodiment, since the insulating film I covers the only part of the edge 13a _e and edge 13c _e consecutively, the solder fillet, edges 13a _e and, It does not reach a part of the edge 13c _e (edge portion positioned in the vicinity of the main surface 3a of the electrode portion 13c). Therefore, even when external force is applied to the multilayer feedthrough capacitor C6 through solder fillet edges _13a e, stress is hardly concentrated on 13c _e, edge _13a e, 13c _e hardly become a starting point of cracks.

In the multilayer feedthrough capacitor C6, together with the electrode portion 15a has a second electrode layer E2, region 15c ₂ of the electrode portion 15c has a second electrode layer E2. For this reason, even when an external force acts on the multilayer feedthrough capacitor C6 through the solder fillet, the stress is unlikely to concentrate on the edge of the external electrode 15, and the edge is unlikely to become a starting point of the crack.

  As a result, in the multilayer feedthrough capacitor C6, the occurrence of cracks in the element body 3 is suppressed.

In the fifth embodiment, the insulating film I continuously covers the main surface 3a and the side surface 3c along only the edge 13a _e and a part of the edge 13c _e . Therefore, the edge 13a _e a portion of the edge 13c _e are reliably covered with the insulating film I. Therefore, the multilayer feedthrough capacitor C6, the edges _13a e, 13c _e hardly more become a starting point of cracks.

  In the fifth embodiment, since the entire electrode portion 13b is exposed from the insulating film I, a solder fillet is formed on the electrode portion 13b. For this reason, the mounting strength of the multilayer feedthrough capacitor C6 is ensured.

In the fifth embodiment, the ratio (L11 / L1) of each length L11 of the film part Ib and the film part Id to the length L1 of the element body 3 is 0.1 or more and 0.4 or less. In this case, the size of the insulating film I is reduced while ensuring the effect of suppressing the occurrence of cracks. Therefore, the low cost of the multilayer feedthrough capacitor C6 can be achieved. If the ratio (L11 / L1) is less than 0.1, the edges _13a e, large stress acts on 13c _e, edge _13a e, 13c _e tends to be a starting point of cracks.

In the fifth embodiment, the ratio (L13 / L12) of the length L13 of the film portion Ia to the length L12 of the electrode portion 13a is 0.3 or more. In this case, the stress is less likely to be concentrated by the edge 13 a _e, so that the generation of cracks in the element body 3 is further suppressed. That is, when the ratio (L13 / L12) is less than 0.3, a large stress acting on the edge 13a _e, easy edge 13a _e becomes a starting point of cracks.

  Next, the structure of the multilayer feedthrough capacitor C7 according to the modification of the fifth embodiment will be described with reference to FIGS. 33 and 34 are plan views of the multilayer feedthrough capacitor according to this modification. FIG. 35 is a side view of the multilayer feedthrough capacitor according to this modification.

  Similarly to the multilayer feedthrough capacitor C6, the multilayer feedthrough capacitor C7 includes an element body 3, a pair of external electrodes 13, a pair of external electrodes 15, a plurality of internal electrodes 17 (not shown), and a plurality of internal electrodes 19 (not shown). It has. In the multilayer feedthrough capacitor C7, the shape of the insulating film I is different from that of the multilayer feedthrough capacitor C6.

The multilayer feedthrough capacitor C7 includes a pair of insulating films I as shown in FIGS. Insulating film I has edge 13a _e of the electrode unit 13a, the edge 13b _e of the electrode portion 13b, and along the edge 13c _e of the electrode portion 13c, and a portion of the part and the element body 3 of the external electrodes 13 Covering. The electrode portion 13e is not covered with the insulating film I.

Insulating film I has edge 13a _e, edges 13b _e, and along all of the edges 13c _e, edge 13a _e, edges 13b _e, and with an edge 13c _e covers continuously, The main surface 3a, the main surface 3b, and the side surface 3c are continuously covered. The insulating film I is located on the film portion Ia located on the electrode portion 13a, the film portion Ib located on the electrode portion 13c, the film portion Ic located on the main surface 3a, and the side surface 3c. Film portion Id, film portion Ie located on electrode portion 13b, and film portion If located on main surface 3b. Each film part Ia, Ib, Ic, Id, Ie, If is integrally formed.

The surface of the electrode portion 13 a has a region covered with the insulating film I (film portion Ia) along the edge 13 a _e and a region exposed from the insulating film I. The region exposed from the insulating film I on the surface of the electrode portion 13a is located closer to the side surface 3e than the region covered with the film portion Ia. The surface of the electrode portion 13c has a region covered with an insulating film I (membrane portion Ib) along the edge 13c _e, and a region exposed from the insulating film I. The region exposed from the insulating film I on the surface of the electrode portion 13c is located closer to the side surface 3e than the region covered with the film portion Ib. The surface of the electrode portion 13b has a region covered with an insulating film I (membrane portion Ie) along the edge 13b _e, and a region exposed from the insulating film I. The region exposed from the insulating film I on the surface of the electrode portion 13b is located closer to the side surface 3e than the region covered with the film portion Ie.

The main surface 3a has a region covered with an insulating film I (membrane portion Ic) along the edge 13a _e, and a region exposed from the insulating film I. Side 3c has a region covered with an insulating film I (membrane portion Id) along the edge 13c _e, and a region exposed from the insulating film I. Major surface 3b has a region covered with an insulating film I (membrane portion If) along the edge 13b _e, and a region exposed from the insulating film I.

In the present modification, the insulating film I continuously covers all of the edge 13 a _e , the edge 13 b _e , and the edge 13 c _e , so that the occurrence of cracks in the element body 3 is reliably suppressed. The

Since the insulating film I continuously covers the main surface 3a, the main surface 3b, and the side surface 3c along all of the end edge 13a _e , the end edge 13b _e , and the end edge 13c _e , the end edge 13a _e All of the edge 13b _e and the edge 13c _e are reliably covered with the insulating film I. For this reason, the edge 13a _e and the edge 13c _e are more unlikely to become the starting point of the crack.

(Sixth embodiment)
With reference to FIG. 36, the structure of the electronic component apparatus ECD which concerns on 6th Embodiment is demonstrated. FIG. 36 is a view for explaining a cross-sectional configuration of the electronic component device according to the sixth embodiment.

  As shown in FIG. 36, the electronic component device ECD includes a multilayer capacitor C1 and an electronic device ED. The electronic device ED is, for example, a circuit board or another electronic component.

  The multilayer capacitor C1 is solder-mounted on the electronic device ED. The electronic device ED has a main surface EDa and two pad electrodes PE1, PE2. Each pad electrode PE1, PE2 is arranged on main surface EDa. The two pad electrodes PE1, PE2 are separated from each other. The multilayer capacitor C1 is arranged in the electronic device ED so that the main surface 3a that is the mounting surface and the main surface EDa face each other.

  When the multilayer capacitor C1 is mounted by solder, the molten solder wets the external electrode 5 (fourth electrode layer E4). The solder fillet SF is formed on the external electrode 5 by solidifying the wet solder. Corresponding external electrode 5 and pad electrodes PE1, PE2 are connected via a solder fillet SF.

Solder fillets SF is formed in the region 5e ₁ and region 5e ₂ of the electrode portions 5e. That is, not only the region 5e ₂ but also the region 5e ₁ not having the second electrode layer E2 (conductive resin layer) is connected to the pad electrodes PE1 and PE2 via the solder fillet SF. Although not shown, the solder fillets SF are formed in a region 5c ₁ and region 5c ₂ of the electrode portions 5c.

In the electronic component device ECD, as compared with the electronic component device solder fillets SF are formed only in the region 5e ₂ of the electrode portions 5e, since a wide region where the solder fillets SF are formed, mounting strength of the multilayer capacitor C1 Is secured.

The region 5e ₂ protrudes in the second direction D2 and the third direction D3 from the region 5e ₁ . Therefore, the boundary between the region 5e ₂ and the region 5e _1, a step is formed. In the vicinity of the boundary between the region 5e ₂ and the region 5e ₁ , the surface area of the region 5e ₁ is smaller than the surface area of the region 5e ₂ , so the path through which the molten solder wets is small. As a result, the melted solder is likely to wet from the region 5e ₂ to the region 5e ₁ , and the solder is likely to accumulate at the step formed by the region 5e ₂ and the region 5e ₁ . The aforementioned step formed by the region 5e ₂ and the region 5e _1, solder pools are formed.

In the electronic component device ECD shown in FIG. 36 formed, as compared with the electronic component device which is not a step is formed in the boundary between the region 5e ₂ and the region 5e _1, the solder sump through the region 5e ₂ and the region 5e ₁ Therefore, the volume of the solder fillet formed in the region 5e ₂ and the pad electrodes PE1 and PE2 is small. Therefore, the force acting on the multilayer capacitor C1 from the solder fillet SF is small, and the stress concentrated on the edge of the first electrode layer E1 located on the main surface 3a that is the mounting surface is also small. As a result, the edge of the first electrode layer E1 is unlikely to be a starting point of a crack, and the occurrence of a crack in the element body 3 is suppressed.

In the electronic component device ECD, the amount of solder that gets wet in the region 5e ₁ is larger than that in the electronic component device in which no step is formed at the boundary between the region 5e ₂ and the region 5e ₁ , so that the solder fillet SF is formed. Wide area. As a result, the mounting strength of the multilayer capacitor C1 is improved.

The step formed by the region 5e ₂ and the region 5e ₁ includes the second electrode layer E2 (conductive resin layer). For this reason, the solder pool formed in the step formed by the region 5e ₂ and the region 5e ₁ is unlikely to be a starting point of a crack. Therefore, the external electrode 5 is unlikely to crack.

As shown in FIGS. 1 and 4, the region 5c ₂ protrudes in the second direction D2 and the third direction D3 from the region 5c ₁ . Therefore, the boundary between the regions 5c ₂ and the region 5c _1, a step is formed. In the vicinity of the boundary between the regions 5c ₂ and the region 5c _1, the surface area of the region 5c ₁ is so smaller than the surface area of the region 5c _2, a small molten solder wetting up the path. These results, molten solder, with easily rising wetting a region 5c ₂ to the area 5c _1, in the step formed by the region 5c ₂ and the region 5c _1, easily accumulate solder. Also the step formed by the region 5c ₂ and the region 5c _1, although not shown, solder pools are formed.

In the electronic component device ECD, as compared with the electronic component device which is not a step is formed at the boundary between the regions 5c ₂ and the region 5c _1, formed in the step in which solder pool is formed by the region 5c ₂ and the region 5c ₁ since the volume of the solder fillet is formed in a region 5c ₂ and the pad electrodes PE1, PE2 is small. Therefore, the force acting on the multilayer capacitor C1 from the solder fillet SF is small, and the stress concentrated on the edge of the first electrode layer E1 located on the main surface 3a that is the mounting surface is also small. As a result, the edge of the first electrode layer E1 is unlikely to be a starting point of a crack, and the occurrence of a crack in the element body 3 is suppressed.

In the electronic component device ECD, as compared with the electronic component device which is not a step is formed at the boundary between the regions 5c ₂ and the region 5c _1, since the large amount of solder rising wet area 5c _1, solder fillets SF are formed Wide area. As a result, the mounting strength of the multilayer capacitor C1 is further improved.

The aforementioned step formed by the region 5c ₂ and the region 5c _1, the second electrode layer E2 (conductive resin layer) are included. Therefore, the solder reservoir formed in the step formed by the region 5c ₂ and the region 5c ₁ is hardly becomes the starting point of cracks. Therefore, cracks are less likely to occur in the external electrode 5.

To the length L1 of the element body 3, the ratio of the length L3 of the region 5e ₂ (L3 / L1) may be 0.8 or less. When the ratio (L3 / L1) is 0.8 or less, compared with the case where the ratio (L3 / L1) is larger than 0.8, the step formed by the region 5e ₂ and the region 5e ₁ A pool is reliably formed.

To the length L1 of the element body 3, the ratio of the length L3 of the regions 5c ₂ (L2 / L1) may be 0.8 or less. When the ratio (L2 / L1) is 0.8 or less, the ratio in comparison with the case (L2 / L1) is greater than 0.8, to the step formed by the region 5c ₂ and the region 5c _1, solder A pool is reliably formed.

  As mentioned above, although embodiment of this invention has been described, this invention is not necessarily limited to embodiment mentioned above, A various change is possible in the range which does not deviate from the summary.

  The electronic component device ECD may include multilayer capacitors C2, C4, C5 or multilayer feedthrough capacitors C3, C6, C7 instead of the multilayer capacitor C1.

Electronic component device ECD is, when provided with a multilayer feedthrough capacitor C3, solder fillets SF are formed in a region 13e ₁ and region 13e ₂ of the electrode portion 13e. Further, the solder fillets SF is also formed in the region 15c ₁ and the region 15c ₂ of the electrode portion 15c.

Electronic component device ECD is, when equipped with the multilayer capacitor C4, solder fillets SF are formed in the region 21c ₁ and the region 21c ₂ of the electrode portion 21c. When the electronic component device ECD includes the multilayer capacitor C5, the solder fillet SF is formed in the regions 31c ₁ and 31e ₁ and the regions 31c ₂ and 31e ₂ of the electrode portions 31c and 31e.

Electronic component device ECD is, when provided with a multilayer feedthrough capacitor C6, C7, solder fillets SF are formed in the region 15c ₁ and the region 15c ₂ of the electrode portion 15c. The solder fillet SF is formed on the electrode portion 13e.

In the multilayer capacitor C1, as shown in FIGS. 37 and 38, the width in the third direction D3 regions 5c ₂ may be larger with distance from the region 5c _1. The multilayer feedthrough capacitor C3, as shown in FIGS. 39 and 40, the width in the third direction D3 of the region 13c ₂ may be larger with distance from the region 13c _1. In any case, the melted solder easily wets from the regions 5c ₂ and 13c ₂ toward the regions 5c ₁ and 13c ₁ , so that generation of cracks in the element body 3 is further suppressed and mounting strength is increased. Will improve.

  The multilayer feedthrough capacitor C3 may include one external electrode 15 as shown in FIG. In this case, the electrode portion 15a extends in the second direction D2 on the main surface 3a. Also in this modification, the entire first electrode layer E1 is covered with the second electrode layer E2 in the electrode portion 15a.

  In this embodiment, the multilayer capacitors C1, C2, C4, and C5 and the multilayer feedthrough capacitors C3, C6, and C7 have been described as examples of electronic components. However, applicable electronic components are not limited to multilayer capacitors and multilayer feedthrough capacitors. . The applicable electronic component is, for example, a multilayer electronic component such as a multilayer inductor, a multilayer varistor, a multilayer piezoelectric actuator, a multilayer thermistor, or a multilayer composite component, or an electronic component other than the multilayer electronic component.

3 ... Element body, 3a, 3b ... Main surface, 3c, 3e ... Side surface, 5, 13, 15, 21, 31 ... External electrode, 5a, 5b, 5c, 5e, 13a, 13b, 13c, 13e, 15a, 15b , 15c, 21a, 21b, 21c , 31a, 31b, 31c, 31e ... electrode _{portion, 5c 1, 5c 2, 5e} 1, 5e 2, 13c 1, 13c 2, 13e 1, 13e 2, 15c 1, 15c 2, 21c ₁ , 21c ₂ , 31c ₁ , 31c ₂ , 31e ₁ , 31e ₂ ... Electrode region, C1, C2, C4, C5... Multilayer capacitor, C3, C5, C7. , E2 ... second electrode layer, E3 ... third electrode layer, E4 ... fourth electrode layer, ECD ... electronic component device, ED ... electronic device, PE1, PE2 ... pad electrode, SF ... solder fillet.

Claims (5)

An element body having a rectangular parallelepiped shape and having a main surface that is a mounting surface and a first side surface adjacent to the main surface;
An external electrode having a first electrode portion disposed on the main surface, and a second electrode portion disposed on the first side surface and connected to the first electrode portion; With
The first electrode portion has a sintered metal layer, a conductive resin layer formed on the sintered metal layer, and a plating layer formed on the conductive resin layer,
The second electrode part is
A first region having a sintered metal layer and a plating layer formed on the sintered metal layer;
A sintered metal layer, a conductive resin layer formed on the sintered metal layer, and a plating layer formed on the conductive resin layer, and the main region is more than the first region. And an electronic component having a second region located closer to the surface.   The ratio of the length of the second region in the direction orthogonal to the main surface to the length of the element body in the direction orthogonal to the main surface is 0.2 or more. Electronic components. The element body further includes a second side surface adjacent to the main surface and the first side surface,
The external electrode further includes a third electrode portion disposed on the second side surface and connected to the first electrode portion,
The third electrode part is
A third region having a sintered metal layer and a plating layer formed on the sintered metal layer;
A sintered metal layer, a conductive resin layer formed on the sintered metal layer, and a plating layer formed on the conductive resin layer, and the main region is more than the third region. The electronic component according to claim 1, further comprising: a fourth region located closer to the surface.   The ratio of the length of the fourth region in the direction orthogonal to the main surface to the length of the element body in the direction orthogonal to the main surface is 0.2 or more. Electronic components. The electronic component according to any one of claims 1 to 4,
An electronic device having a pad electrode connected to the external electrode via a solder fillet,
The solder fillet is an electronic component device formed in the first region and the second region of the second electrode portion.

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