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JP2017228644A - Wiring board, composite wiring board including the wiring board, and method for their manufacturing - Google Patents

Wiring board, composite wiring board including the wiring board, and method for their manufacturing Download PDF

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JP2017228644A
JP2017228644A JP2016123642A JP2016123642A JP2017228644A JP 2017228644 A JP2017228644 A JP 2017228644A JP 2016123642 A JP2016123642 A JP 2016123642A JP 2016123642 A JP2016123642 A JP 2016123642A JP 2017228644 A JP2017228644 A JP 2017228644A
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substrate
wiring board
conductive layer
layer
layers
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勝敏 北川
Katsutoshi Kitagawa
勝敏 北川
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Ibiden Co Ltd
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Ibiden Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a wiring board, in mounting an electronic component to form an electronic device, capable of preventing the thickness of the entire electronic device from being badly balanced, a composite wiring board including the wiring board, and methods for their manufacturing.SOLUTION: In a substrate 10 for a device of the present invention, a first substrate 11 and a second substrate 20 are joined. The first substrate 11 has two metal portions 18, 18 which connect between front and rear conductive circuit layers 13, 13, which are exposed to both front and rear surfaces, and which are electrically connected via a common pat 17A that is provided to the conductive circuit layer 13 on a B surface 12B side. The two metal portions 18, 18 are formed of a base material of welding.SELECTED DRAWING: Figure 1

Description

本発明は、導電層と絶縁層とが交互に積層されてなる配線板、その配線板を有する複合配線板及びそれらの製造方法に関する。   The present invention relates to a wiring board in which conductive layers and insulating layers are alternately laminated, a composite wiring board having the wiring board, and a method for manufacturing the same.

この種の配線板として、最外の絶縁樹脂層上の導電層に、電子部品が実装されるものが知られている(例えば、特許文献1参照)。   As this type of wiring board, one in which an electronic component is mounted on a conductive layer on the outermost insulating resin layer is known (for example, see Patent Document 1).

特開2016−015433号公報(段落[0017]、図12)Japanese Unexamined Patent Publication No. 2006-015433 (paragraph [0017], FIG. 12)

上述した配線板においては、大きさの異なる電子部品を複数実装して電子デバイスとする際に、その電子デバイス全体の厚さのバランスが悪くなることが起こり得る。   In the above-described wiring board, when a plurality of electronic components having different sizes are mounted to form an electronic device, the balance of the thickness of the entire electronic device may be deteriorated.

本発明に係る配線板は、めっき層を有する導電層と、絶縁層と、が交互に積層されてなる配線板であって、少なくとも一部が前記導電層の前記めっき層と一体に形成されていて、表裏の最外の前記導電層間を接続し、かつ、表裏の両面に露出すると共に、少なくとも1つの前記導電層を介して互いに導通する2つの金属部を有し、2つの前記金属部が溶接の母材からなる。   The wiring board according to the present invention is a wiring board in which a conductive layer having a plating layer and an insulating layer are alternately laminated, and at least a part thereof is formed integrally with the plating layer of the conductive layer. Connecting the outermost conductive layers on the front and back sides, and being exposed on both sides of the front and back sides, and having two metal portions that are electrically connected to each other via at least one conductive layer, the two metal portions being It consists of a base material for welding.

本発明の第1実施形態に係るデバイス用基板の側断面図1 is a side sectional view of a device substrate according to a first embodiment of the present invention. (A)第2基板の側断面図、(B)第1基板の側断面図(A) Side sectional view of the second substrate, (B) Side sectional view of the first substrate 共通パッドの平断面図Cross section of common pad デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の製造工程を示す側断面図Side sectional view showing the manufacturing process of device substrate デバイス用基板の使用例を示す側断面図Side cross-sectional view showing usage example of device substrate デバイス用基板の使用例を示す斜視図Perspective view showing usage example of device substrate 第2実施形態に係るデバイス用基板の側断面図Side sectional view of the device substrate according to the second embodiment. 第3実施形態に係るデバイス用基板の側断面図Side sectional view of a device substrate according to a third embodiment.

[第1実施形態]
以下、本発明の第1実施形態を図1〜14に基づいて説明する。図1には、複数の電子部品90,91が実装されて電子デバイス100(図13参照)として使用されるためのデバイス用基板10(本発明の「複合配線板」に相当する)が示されている。本実施形態のデバイス用基板10は、第1基板11(本発明の「配線板」に相当する)と第2基板20とが接合されてなる。
[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a device substrate 10 (corresponding to the “composite wiring board” of the present invention) on which a plurality of electronic components 90 and 91 are mounted and used as an electronic device 100 (see FIG. 13). ing. The device substrate 10 of this embodiment is formed by bonding a first substrate 11 (corresponding to a “wiring board” of the present invention) and a second substrate 20.

図2(B)に示すように、第1基板11は、板厚方向の中央に絶縁基板12(本発明の「絶縁層」、「第1中央絶縁層」に相当する)を有している。絶縁基板12は、例えばエポキシ樹脂とガラスクロスなどの補強材からなり、その表側面であるF面12Fと裏側面であるB面12Bとに導電回路層13,13(本発明の「導電層」に相当する)がそれぞれ形成されている。導電回路層13,13は、絶縁基板12上の銅箔層13A,13Aと、その上のめっき層13B,13Bと、を有している。   As shown in FIG. 2B, the first substrate 11 has an insulating substrate 12 (corresponding to “insulating layer” and “first central insulating layer” of the present invention) in the center in the plate thickness direction. . The insulating substrate 12 is made of, for example, a reinforcing material such as epoxy resin and glass cloth. The conductive circuit layers 13 and 13 (the “conductive layer” of the present invention) are formed on the F surface 12F which is the front side surface and the B surface 12B which is the back side surface. Respectively). The conductive circuit layers 13 and 13 have copper foil layers 13A and 13A on the insulating substrate 12 and plating layers 13B and 13B thereon.

絶縁基板12には、導電用貫通孔14が複数形成されている。導電用貫通孔14は、絶縁基板12のF面12F及びB面12Bの両面からそれぞれ穿孔しかつ奥側に向かって徐々に縮径したテーパー孔14A,14Aの小径側端部を互いに連通させた中間括れ形状をなしている。導電用貫通孔14内にはめっきが充填されてスルーホール導体15が形成され、そのスルーホール導体15によってF面12Fの導電回路層13とB面12Bの導電回路層13との間が接続されている。また、このスルーホール導体15は、導電回路層13,13のめっき層13B,13Bと一体に形成されている。なお、導電用貫通孔14の形状は、中間が括れていないストレートの円柱形状でもよいし、一方の面から他方の面に向かって縮径したテーパー状でもよい。   A plurality of conductive through holes 14 are formed in the insulating substrate 12. The conductive through-holes 14 communicated with each other at the small-diameter side end portions of the tapered holes 14A and 14A, which are perforated from both the F surface 12F and the B surface 12B of the insulating substrate 12 and gradually reduced in diameter toward the back side. Has an intermediate constricted shape. The through hole 14 for conduction is filled with plating to form a through-hole conductor 15, and the through-hole conductor 15 connects between the conductive circuit layer 13 on the F surface 12 F and the conductive circuit layer 13 on the B surface 12 B. ing. The through-hole conductor 15 is formed integrally with the plating layers 13B and 13B of the conductive circuit layers 13 and 13. The shape of the conductive through hole 14 may be a straight cylindrical shape with no intermediate portion, or may be a tapered shape having a diameter reduced from one surface to the other surface.

絶縁基板12の表裏の導電回路層13,13上には、ソルダーレジスト層16,16が積層されている。ソルダーレジスト層16,16には、複数のパッド用孔16H,16Hが形成され、導電回路層13,13のうちパッド用孔16H,16Hから露出した部分がパッド17,17になっている。   Solder resist layers 16 and 16 are laminated on the conductive circuit layers 13 and 13 on the front and back sides of the insulating substrate 12. A plurality of pad holes 16H and 16H are formed in the solder resist layers 16 and 16, and portions of the conductive circuit layers 13 and 13 exposed from the pad holes 16H and 16H are pads 17 and 17, respectively.

また、第1基板11のF面11F側のうち、第2基板20と板厚方向で重なる部分には、ソルダーレジスト層16が除去されてなる受容部19が形成されている。そして、導電回路層13のうち受容部19から露出した部分もパッド17となっている。   Further, a receiving portion 19 formed by removing the solder resist layer 16 is formed in a portion overlapping the second substrate 20 in the thickness direction on the F surface 11F side of the first substrate 11. A portion of the conductive circuit layer 13 exposed from the receiving portion 19 is also a pad 17.

図2(A)に示すように、第2基板20は、コア基板21(本発明の「絶縁層」、「第2中央絶縁層」に相当する)の表裏の両面にビルドアップ層30が積層されてなる。第1基板11における絶縁基板12と同様に、コア基板21は、絶縁性部材で構成され、その表側面であるF面21Fと裏側面であるB面21Bとには、導電回路層23,23(本発明の「導電層」に相当する)がそれぞれ形成されている。   As shown in FIG. 2A, the second substrate 20 has a build-up layer 30 laminated on both sides of the core substrate 21 (corresponding to “insulating layer” and “second central insulating layer” of the present invention). Being done. Similar to the insulating substrate 12 in the first substrate 11, the core substrate 21 is made of an insulating member, and the conductive circuit layers 23 and 23 are formed on the F surface 21 </ b> F that is the front side surface and the B surface 21 </ b> B that is the back side surface. (Corresponding to the “conductive layer” of the present invention) is formed.

また、コア基板21にも、導電用貫通孔24が複数形成されている。導電用貫通孔24は、コア基板21のF面21F及びB面21Bの両面からそれぞれ穿孔しかつ奥側に向かって徐々に縮径したテーパー孔24A,24Aの小径側端部を互いに連通させた中間括れ形状をなしている。導電用貫通孔24内にはめっきが充填されてスルーホール導体25が形成され、そのスルーホール導体25によってF面21F上の導電回路層23とB面21B上の導電回路層23との間が接続されている。   The core substrate 21 is also formed with a plurality of conductive through holes 24. The through-hole 24 for conduction made the small-diameter side end portions of the tapered holes 24A and 24A, which are perforated from both the F surface 21F and the B surface 21B of the core substrate 21 and gradually reduced in diameter toward the back side, communicate with each other. Has an intermediate constricted shape. The through hole 24 for conduction is filled with plating to form a through-hole conductor 25, and the through-hole conductor 25 forms a gap between the conductive circuit layer 23 on the F surface 21 F and the conductive circuit layer 23 on the B surface 21 B. It is connected.

コア基板21のF面21F側のビルドアップ層30も、B面21B側のビルドアップ層30も共に、コア基板21側から、絶縁樹脂層31(本発明の「絶縁層」に相当する)と導電層32とを積層してなる。   Both the build-up layer 30 on the F surface 21F side and the build-up layer 30 on the B surface 21B side of the core substrate 21 are formed from the core substrate 21 side with an insulating resin layer 31 (corresponding to the “insulating layer” of the present invention). A conductive layer 32 is laminated.

絶縁樹脂層31は、例えば、プリプレグ(心材を樹脂含浸してなるBステージの樹脂シート)からなり、絶縁樹脂層31には複数のビアホール31Hが形成されている。ビアホール31Hは、コア基板21側に向かって徐々に縮径したテーパー状になっていて、これらビアホール31H内にめっきが充填されて複数のビア導体31Dが形成されている。そして、絶縁樹脂層31のビア導体31Dによって、導電回路層23と導電層32との間が接続されている。なお、導電回路層23及び導電層32は、絶縁基板12又は絶縁樹脂層31上の銅箔層23A,32Aと、その上のめっき層23B,32Bと、を有している。   The insulating resin layer 31 is made of, for example, a prepreg (a B-stage resin sheet obtained by impregnating a core material with a resin), and the insulating resin layer 31 has a plurality of via holes 31H. The via hole 31H has a tapered shape with a diameter gradually reduced toward the core substrate 21, and the via hole 31H is filled with plating to form a plurality of via conductors 31D. The conductive circuit layer 23 and the conductive layer 32 are connected by the via conductor 31 </ b> D of the insulating resin layer 31. The conductive circuit layer 23 and the conductive layer 32 include copper foil layers 23A and 32A on the insulating substrate 12 or the insulating resin layer 31, and plating layers 23B and 32B thereon.

コア基板21の表裏のビルドアップ層30,30のうち導電層32,32上には、ソルダーレジスト層33,33が積層されている。ソルダーレジスト層33,33には、複数のパッド用孔33H,33Hが形成され、導電層32,32のうちパッド用孔33H,33Hから露出した部分がパッド34,34になっている。   Solder resist layers 33 and 33 are laminated on the conductive layers 32 and 32 of the build-up layers 30 and 30 on the front and back sides of the core substrate 21. A plurality of pad holes 33H, 33H are formed in the solder resist layers 33, 33, and portions of the conductive layers 32, 32 exposed from the pad holes 33H, 33H are pads 34, 34.

なお、本実施形態において、「パッド」とは、導電層のうち層間接続するための部分、他の部品又は他の基板と接続するための部分をいう。   In the present embodiment, the “pad” refers to a portion for connecting between layers, a portion for connecting to another component or another substrate in the conductive layer.

さて、第1基板11と第2基板20とは、互いに接合されるために以下のような構成になっている。即ち、図2(B)に示すように、第1基板11では、2つのスルーホール導体15が例えば0.2〜2mm以内に並列状態に配されている。そして、F面12F側の導電回路層13とB面12B側の導電回路層13に、それら2つのスルーホール導体15が共通して接続される共通パッド17A,17Aが設けられている。共通パッド17Aの平面形状は、図3(A)に示すように、四角形状であってもよいし、図3(B)及び図3(C)に示すように、アレイ状であってもよいし、図3(D)に示すように、長円形状であってもよい。   Now, since the first substrate 11 and the second substrate 20 are bonded to each other, they have the following configuration. That is, as shown in FIG. 2B, in the first substrate 11, two through-hole conductors 15 are arranged in parallel within, for example, 0.2 to 2 mm. Then, common pads 17A and 17A to which the two through-hole conductors 15 are commonly connected are provided on the conductive circuit layer 13 on the F surface 12F side and the conductive circuit layer 13 on the B surface 12B side. The planar shape of the common pad 17A may be a quadrangular shape as shown in FIG. 3A, or may be an array shape as shown in FIGS. 3B and 3C. However, as shown in FIG. 3D, an oval shape may be used.

なお、それらスルーホール導体15,15と、共通パッド17A,17Aのうちスルーホール導体15,15上に位置する部分とから本発明の金属部18,18が構成されている。また、図3に示すように、共通パッド17Aは、1つの第1基板11内に複数並べて配されている。このとき、図3(A)に示すように、各共通パッド17Aにより接続される金属部18,18同士が真横に並ぶように配置されていてもよいし、図3(B)〜(D)に示すように、ずれて配置されていてもよい。後者の場合、金属部18,18の径を大きくして第2基板20との接合部分を大きくすることができる。   In addition, the metal parts 18 and 18 of this invention are comprised from these through-hole conductors 15 and 15 and the part located on the through-hole conductors 15 and 15 among the common pads 17A and 17A. Further, as shown in FIG. 3, a plurality of common pads 17 </ b> A are arranged side by side in one first substrate 11. At this time, as shown in FIG. 3 (A), the metal portions 18 and 18 connected by the common pads 17A may be arranged so as to be arranged side by side, or FIGS. 3 (B) to (D). As shown in FIG. In the latter case, the diameter of the metal portions 18 and 18 can be increased to increase the joint portion with the second substrate 20.

また、図2(A)に示すように、第2基板20には、B面21B側の導電層32に、第1基板11のF面12F側の共通パッド17Aが当接可能な接合用パッド34B(本発明の「第3接続部」に相当する)が設けられている。   As shown in FIG. 2A, the second substrate 20 has a bonding pad in which the common pad 17A on the F surface 12F side of the first substrate 11 can come into contact with the conductive layer 32 on the B surface 21B side. 34B (corresponding to the “third connection portion” of the present invention) is provided.

そして、図1に示すように、第1基板11の2つの金属部18,18が第2基板20の接合用パッド34Bに直接、抵抗溶接されることにより、第1基板11と第2基板20とが接合されている。つまり2つの金属部18,18は抵抗溶接の母材となっている。また、第1基板11のF面11F側のパッド17が比較的大きい電子部品90(本発明の「第1部品」に相当する)が実装される本発明の第1実装部38に相当し、第2基板20のF面20F側のパッド34が比較的小さい電子部品91(本発明の「第2部品」に相当する)が実装される本発明の第2実装部39に相当する。   As shown in FIG. 1, the two metal portions 18 and 18 of the first substrate 11 are directly resistance-welded to the bonding pads 34 </ b> B of the second substrate 20, so that the first substrate 11 and the second substrate 20. And are joined. That is, the two metal portions 18 and 18 are resistance welding base materials. Further, the first substrate 11 corresponds to the first mounting portion 38 of the present invention on which the electronic component 90 (corresponding to the “first component” of the present invention) on which the pad 17 on the F surface 11F side of the first substrate 11 is relatively large is mounted. The pad 34 on the F surface 20F side of the second substrate 20 corresponds to the second mounting portion 39 of the present invention on which an electronic component 91 (corresponding to the “second component” of the present invention) is mounted.

次に、本実施形態のデバイス用基板10の製造方法について説明する。まず、第1基板11は以下のようにして製造される。   Next, a method for manufacturing the device substrate 10 of the present embodiment will be described. First, the first substrate 11 is manufactured as follows.

(1)図4(A)に示すように、絶縁基板12の表裏の両面に銅箔12Cがラミネートされているものが用意される。   (1) As shown to FIG. 4 (A), what laminated | stacked copper foil 12C on both the front and back of the insulated substrate 12 is prepared.

(2)図4(B)に示すように、絶縁基板12にF面12F側から例えばCO2レーザが照射されて導電用貫通孔14(図2(B)参照)を形成するためのテーパー孔14Aが穿孔される。   (2) As shown in FIG. 4B, a tapered hole 14A for forming a conductive through hole 14 (see FIG. 2B) by irradiating the insulating substrate 12 with, for example, CO2 laser from the F surface 12F side. Is perforated.

(3)図4(C)に示すように、絶縁基板12のB面12Bのうち前述したF面12F側のテーパー孔14Aの真裏となる位置にCO2レーザが照射されてテーパー孔14Aが穿孔され、それらテーパー孔14A,14Aから導電用貫通孔14が形成される。   (3) As shown in FIG. 4C, CO2 laser is irradiated to a position directly behind the tapered hole 14A on the F surface 12F side of the B surface 12B of the insulating substrate 12 to form the tapered hole 14A. The conductive through-hole 14 is formed from the tapered holes 14A and 14A.

(4)無電解めっき処理が行われ、銅箔12C上と、導電用貫通孔14内とに無電解めっき膜(図示せず)が形成される。   (4) An electroless plating process is performed, and an electroless plating film (not shown) is formed on the copper foil 12C and in the conductive through hole 14.

(5)電解めっき処理が行われ、図4(D)に示すように、電解めっきが導電用貫通孔14内に充填されてスルーホール導体15が形成されると共に、銅箔12C上の無電解めっき膜上に電解めっき膜40が形成される。以降、銅箔12C、無電解めっき膜及び電解めっき膜40を合わせて導体膜41という。   (5) An electrolytic plating process is performed, and as shown in FIG. 4D, the electroplating is filled in the conductive through-holes 14 to form the through-hole conductors 15 and the electroless on the copper foil 12C. An electrolytic plating film 40 is formed on the plating film. Hereinafter, the copper foil 12C, the electroless plating film, and the electrolytic plating film 40 are collectively referred to as a conductor film 41.

(6)図5(A)に示すように、導体膜41上に、所定パターンのエッチングレジスト42が形成される。   (6) As shown in FIG. 5A, an etching resist 42 having a predetermined pattern is formed on the conductor film 41.

(7)エッチングが行われ、図5(B)に示すように、導体膜41のうちエッチングレジスト42から露出した部分が除去される。   (7) Etching is performed, and the portion of the conductor film 41 exposed from the etching resist 42 is removed as shown in FIG.

(8)エッチングレジスト42が剥離され、図5(C)に示すように、残された導体膜41により導電回路層13が形成される。これにより、絶縁基板12の表裏の導電回路層13がスルーホール導体15により接続された状態になる。なお、導電回路層13のうち、無電解めっき膜と電解めっき膜40とから残された部分から上述しためっき層13Bが構成される。このめっき層13Bはスルーホール導体15と一体になっている。   (8) The etching resist 42 is peeled off, and the conductive circuit layer 13 is formed by the remaining conductor film 41 as shown in FIG. Thereby, the conductive circuit layers 13 on the front and back sides of the insulating substrate 12 are connected by the through-hole conductor 15. In addition, the plating layer 13B mentioned above is comprised from the part left from the electroless plating film | membrane and the electrolytic plating film | membrane 40 among the conductive circuit layers 13. FIG. This plating layer 13B is integrated with the through-hole conductor 15.

(9)図6(A)に示すように、絶縁基板12の表裏の導電回路層13,13上にソルダーレジスト層16,16が積層される。その際、導電回路層13,13同士の間がソルダーレジスト層16,16にて埋められる。   (9) As shown in FIG. 6A, solder resist layers 16 and 16 are laminated on the conductive circuit layers 13 and 13 on the front and back sides of the insulating substrate 12. At that time, the space between the conductive circuit layers 13 and 13 is filled with the solder resist layers 16 and 16.

(10)図6(B)に示すように、絶縁基板12の表裏のソルダーレジスト層16,16の所定箇所にテーパー状のパッド用孔16H,16H及び受容部19が形成され、絶縁基板12の表裏の導電回路層13,13のうちパッド用孔16H,16H及び受容部19から露出した部分がパッド17になる。   (10) As shown in FIG. 6B, tapered pad holes 16H and 16H and receiving portions 19 are formed at predetermined positions of the solder resist layers 16 and 16 on the front and back of the insulating substrate 12, and the insulating substrate 12 Of the front and back conductive circuit layers 13, 13, portions exposed from the pad holes 16 </ b> H, 16 </ b> H and the receiving portion 19 become the pads 17.

(11)パッド17上に、ニッケル層、パラジウム層、金層の順に積層されて金属膜(図示せず)が形成される。以上で図2(B)に示される第1基板11が完成する。なお、金属膜の代わりに、OSP(プリフラックス)による表面処理をおこなっても良い。   (11) On the pad 17, a nickel layer, a palladium layer, and a gold layer are laminated in this order to form a metal film (not shown). Thus, the first substrate 11 shown in FIG. 2B is completed. Note that surface treatment with OSP (preflux) may be performed instead of the metal film.

次に、第2基板20は以下のようにして製造される。   Next, the second substrate 20 is manufactured as follows.

(1)図7(A)に示すように、コア基板21の表裏の両面に銅箔21Cがラミネートされているものが用意される。   (1) As shown to FIG. 7 (A), what laminated | stacked copper foil 21C on both the front and back of the core board | substrate 21 is prepared.

(2)図7(B)に示すように、コア基板21にF面21F側から例えばCO2レーザが照射されて導電用貫通孔24(図1参照)を形成するためのテーパー孔24Aが穿孔される。   (2) As shown in FIG. 7B, the core substrate 21 is irradiated with, for example, a CO 2 laser from the F surface 21F side to form a tapered hole 24A for forming a conductive through hole 24 (see FIG. 1). The

(3)図7(C)に示すように、コア基板21のB面21Bのうち前述したF面21F側のテーパー孔24Aの真裏となる位置にCO2レーザが照射されてテーパー孔24Aが穿孔され、それらテーパー孔24A,24Aから導電用貫通孔24が形成される。   (3) As shown in FIG. 7C, CO2 laser is irradiated to a position directly behind the taper hole 24A on the F surface 21F side of the B surface 21B of the core substrate 21 to drill the taper hole 24A. The conductive through hole 24 is formed from the tapered holes 24A and 24A.

(4)無電解めっき処理が行われ、銅箔21C上と、導電用貫通孔24内とに無電解めっき膜(図示せず)が形成される。   (4) An electroless plating process is performed, and an electroless plating film (not shown) is formed on the copper foil 21 </ b> C and in the conductive through hole 24.

(5)電解めっき処理が行われ、図7(D)に示すように、電解めっきが導電用貫通孔24内に充填されてスルーホール導体25が形成されると共に、銅箔12C上の無電解めっき膜上に電解めっき膜45が形成される。以降、銅箔21C、無電解めっき膜及び電解めっき膜45を合わせて導体膜46という。   (5) An electrolytic plating process is performed, and as shown in FIG. 7D, the electroplating is filled in the conductive through holes 24 to form the through-hole conductors 25, and the electroless on the copper foil 12C. An electrolytic plating film 45 is formed on the plating film. Hereinafter, the copper foil 21 </ b> C, the electroless plating film, and the electrolytic plating film 45 are collectively referred to as a conductor film 46.

(6)図8(A)に示すように、導体膜46上に、所定パターンのエッチングレジスト47が形成される。   (6) As shown in FIG. 8A, an etching resist 47 having a predetermined pattern is formed on the conductor film 46.

(7)エッチングが行われ、図8(B)に示すように、導体膜46のうちエッチングレジスト47から露出した部分が除去される。   (7) Etching is performed, and the portion of the conductor film 46 exposed from the etching resist 47 is removed as shown in FIG.

(8)エッチングレジスト47が剥離され、図8(C)に示すように、残された導体膜46により導電回路層23が形成される。これにより、コア基板21の表裏の導電回路層23がスルーホール導体25により接続された状態になる。なお、導電回路層23のうち、無電解めっき膜と電解めっき膜45とから残された部分から上述しためっき層23Bが構成される。   (8) The etching resist 47 is peeled off, and the conductive circuit layer 23 is formed by the remaining conductor film 46 as shown in FIG. 8C. As a result, the conductive circuit layers 23 on the front and back sides of the core substrate 21 are connected by the through-hole conductors 25. In addition, the plating layer 23 </ b> B described above is configured from a portion left of the electroless plating film and the electrolytic plating film 45 in the conductive circuit layer 23.

(9)図9(A)に示すように、コア基板21の表裏の導電回路層23,23上に、絶縁樹脂層31としてのプリプレグと銅箔50とが積層されてから、加熱プレスされる。その際、導電回路層23,23同士の間がプリプレグにて埋められる。   (9) As shown in FIG. 9A, the prepreg as the insulating resin layer 31 and the copper foil 50 are laminated on the conductive circuit layers 23, 23 on the front and back of the core substrate 21, and then heated and pressed. . At that time, the space between the conductive circuit layers 23 and 23 is filled with the prepreg.

(10)図9(B)に示すように、上記したプリプレグによって形成されたコア基板21の表裏の両側の絶縁樹脂層31,31にCO2レーザが照射されて、複数のビアホール31H,31Hが形成される。   (10) As shown in FIG. 9B, a plurality of via holes 31H, 31H are formed by irradiating the insulating resin layers 31, 31 on both sides of the core substrate 21 formed by the prepreg with CO2 laser. Is done.

(11)無電解めっき処理が行われ、絶縁樹脂層31,31上と、ビアホール31H,31H内とに無電解めっき膜(図示せず)が形成される。   (11) An electroless plating process is performed, and an electroless plating film (not shown) is formed on the insulating resin layers 31 and 31 and in the via holes 31H and 31H.

(12)電解めっき処理が行われ、図9(C)に示すように、電解めっきがビアホール31H内に充填されてビア導体31Dが形成されると共に、銅箔50上の無電解めっき膜上に電解めっき膜51が形成される。以降、銅箔50、無電解めっき膜及び電解めっき膜51を合わせて導体膜52という。   (12) An electrolytic plating process is performed, and as shown in FIG. 9C, the electrolytic plating is filled in the via hole 31H to form the via conductor 31D, and on the electroless plating film on the copper foil 50 An electrolytic plating film 51 is formed. Hereinafter, the copper foil 50, the electroless plating film, and the electrolytic plating film 51 are collectively referred to as a conductor film 52.

(13)図10(A)に示すように、導体膜52上に、所定パターンのエッチングレジスト53が形成される。   (13) As shown in FIG. 10A, an etching resist 53 having a predetermined pattern is formed on the conductor film 52.

(14)エッチングが行われ、図10(B)に示すように、導体膜52のうちエッチングレジスト53から露出した部分が除去される。   (14) Etching is performed, and the portion of the conductor film 52 exposed from the etching resist 53 is removed as shown in FIG.

(15)エッチングレジスト53が剥離され、図10(C)に示すように、残された導体膜52により導電層32が形成される。これにより、導電層32と導電回路層23とがビア導体31Dにより接続された状態になる。なお、導電層32のうち、無電解めっき膜と電解めっき膜51とから残された部分から上述しためっき層32Bが構成される。   (15) The etching resist 53 is peeled off, and the conductive layer 32 is formed by the remaining conductor film 52 as shown in FIG. As a result, the conductive layer 32 and the conductive circuit layer 23 are connected by the via conductor 31D. In addition, the plating layer 32B mentioned above is comprised from the part left from the electroless plating film | membrane and the electrolytic plating film | membrane 51 among the conductive layers 32. FIG.

(16)図11(A)に示すように、コア基板21の表裏の各導電層32上にソルダーレジスト層33,33が積層される。   (16) As shown in FIG. 11A, solder resist layers 33 and 33 are laminated on the conductive layers 32 on the front and back sides of the core substrate 21.

(17)図11(B)に示すように、コア基板21の表裏のソルダーレジスト層33,33の所定箇所にテーパー状のパッド用孔33H,33Hが形成され、コア基板21の表裏の各導電層32のうちパッド用孔33Hから露出した部分がパッド34になる。   (17) As shown in FIG. 11B, tapered pad holes 33H and 33H are formed at predetermined positions on the solder resist layers 33 and 33 on the front and back sides of the core substrate 21, and the respective conductive surfaces on the front and back sides of the core substrate 21 are electrically connected. A portion of the layer 32 exposed from the pad hole 33 </ b> H becomes a pad 34.

(18)パッド34上に、ニッケル層、パラジウム層、金層の順に積層されて金属膜(図示せず)が形成される。以上で図2(A)に示される第2基板20が完成する。なお、金属膜の代わりに、OSP(プリフラックス)による表面処理をおこなっても良い。   (18) On the pad 34, a nickel layer, a palladium layer, and a gold layer are laminated in this order to form a metal film (not shown). Thus, the second substrate 20 shown in FIG. 2A is completed. Note that surface treatment with OSP (preflux) may be performed instead of the metal film.

そして、第1基板11と第2基板20とは以下のようにして接合される。   The first substrate 11 and the second substrate 20 are bonded as follows.

(1)第2基板20がF面20Fを下にして載置される。   (1) The second substrate 20 is placed with the F surface 20F facing down.

(2)第2基板20のB面20B上に、第1基板11のF面12F側の共通パッド17A(即ち、金属部18のF面12F側の面)が第2基板20の接合用パッド34Bに当接するようにして、第1基板11が載置される。   (2) On the B surface 20B of the second substrate 20, the common pad 17A on the F surface 12F side of the first substrate 11 (that is, the surface on the F surface 12F side of the metal portion 18) is a bonding pad for the second substrate 20. The first substrate 11 is placed so as to be in contact with 34B.

(3)図12に示すように、第1基板11の共通パッド17Aのうち、スルーホール導体15,15上に位置する部分(即ち、金属部18のB面12B側の面)にそれぞれ電極95,96(本発明の「溶接ツール」に相当する)が配される。   (3) As shown in FIG. 12, among the common pads 17A of the first substrate 11, electrodes 95 are respectively formed on portions located on the through-hole conductors 15 and 15 (that is, the surface on the B surface 12B side of the metal portion 18). 96 (corresponding to the “welding tool” of the present invention).

(4)第1基板11と第2基板20とが互いに加圧される状態で、電極95,96間に電流が流されることで、第1基板11の金属部18のF面12F側と第2基板20の接合用パッド34Bとが抵抗溶接され、第1基板11と第2基板20とが接合される。以上でデバイス用基板10が完成する。なお、図12には、このときの電流の流れが示されている。このように電極を一方の部材側に複数の電極を配置する抵抗溶接の方法はシリーズ式と呼ばれている。   (4) In the state where the first substrate 11 and the second substrate 20 are pressurized with each other, a current is passed between the electrodes 95 and 96, so that the F surface 12F side of the metal portion 18 of the first substrate 11 and the first substrate 11 The bonding pads 34B of the two substrates 20 are resistance welded, and the first substrate 11 and the second substrate 20 are bonded. Thus, the device substrate 10 is completed. FIG. 12 shows the current flow at this time. The resistance welding method in which a plurality of electrodes are arranged on one member side in this way is called a series method.

本実施形態のデバイス用基板10の構造及び製造方法に関する説明は以上である。次にデバイス用基板10の使用例と作用効果とを説明する。図13及び図14に示すように、本実施形態のデバイス用基板10は、第1基板11上の第1実装部38と第2基板20上の第2実装部39とに、半田バンプ80が形成されて、その上にCPU等の電子部品90,91が搭載されて半田付けされることで電子デバイス100として使用される。   This completes the description of the structure and manufacturing method of the device substrate 10 of the present embodiment. Next, usage examples and operational effects of the device substrate 10 will be described. As shown in FIGS. 13 and 14, the device substrate 10 of this embodiment has solder bumps 80 on the first mounting portion 38 on the first substrate 11 and the second mounting portion 39 on the second substrate 20. Once formed, electronic components 90 and 91 such as a CPU are mounted thereon and soldered to be used as the electronic device 100.

ここで、デバイス用基板に大きさの異なる電子部品が実装されることがあるが、本実施形態では、デバイス用基板10が、2つの基板11,20を板厚方向で接合することにより製造され、第1基板11上の第1実装部38の高さと第2基板20上の第2実装部39の高さとが異なっているので、比較的大きい電子部品90を第1基板11の第1実装部38に実装し、比較的小さい電子部品91を第2基板20の第2実装部39に実装することで、電子デバイス100全体の厚さのバランスを良くすることができ、電子デバイス100全体の厚さを小さくすることができる。   Here, electronic components having different sizes may be mounted on the device substrate. In this embodiment, the device substrate 10 is manufactured by joining two substrates 11 and 20 in the thickness direction. Since the height of the first mounting portion 38 on the first substrate 11 is different from the height of the second mounting portion 39 on the second substrate 20, the relatively large electronic component 90 is mounted on the first substrate 11. By mounting the relatively small electronic component 91 on the second mounting portion 39 of the second substrate 20 by mounting on the portion 38, the thickness balance of the entire electronic device 100 can be improved, and the entire electronic device 100 can be improved. The thickness can be reduced.

また、第1基板11と第2基板20とが抵抗溶接により直接接合されるので、接続用のコネクタ等が不要となり、部品点数を減らすことができる。また、コネクタ等により接続する構成よりもデバイス用基板10全体の厚さを小さくすることができる。   In addition, since the first substrate 11 and the second substrate 20 are directly joined by resistance welding, a connection connector or the like becomes unnecessary, and the number of components can be reduced. In addition, the thickness of the device substrate 10 as a whole can be made smaller than a configuration in which connection is made by a connector or the like.

ところで、デバイス用基板の製造においては、一般的に、複数の製品が1つの集合基板内で同時に作成され、その集合基板が各製品領域で切断されることで、複数の製品に分割される。ここで、デバイス用基板の平面形状が複雑である場合、1つの集合基板における余白部分が大きくなり、製品の取り数が少なくなることが考えられる。   By the way, in the manufacture of a device substrate, generally, a plurality of products are created simultaneously in one collective substrate, and the collective substrate is cut into each product region, thereby being divided into a plurality of products. Here, when the planar shape of the device substrate is complicated, it is conceivable that a blank portion in one aggregate substrate becomes large and the number of products to be obtained decreases.

これに対して、本実施形態では、第1基板11と第2基板20とを別個に作成し、それらを接合することでデバイス用基板10を作成するので、デバイス用基板10の平面形状が複雑であっても、集合基板内で作成する各基板11,20の平面形状を簡素にすることができ、製品の取り数を増やすことができる。   On the other hand, in the present embodiment, the first substrate 11 and the second substrate 20 are separately formed, and the device substrate 10 is formed by bonding them, so that the planar shape of the device substrate 10 is complicated. Even so, the planar shape of each of the substrates 11 and 20 created in the collective substrate can be simplified, and the number of products can be increased.

また、各基板11,20の配線パターンは、溶接部分以外、制約を受けないので、パターン設計に及ぶ影響を抑えつつ、上述した効果を得ることができる。   Moreover, since the wiring pattern of each board | substrate 11 and 20 is not restricted except a welding part, the effect mentioned above can be acquired, suppressing the influence which affects pattern design.

また、第1基板11を、2つの金属部18,18及び共通パッド17A,17Aを有する構成とすることで、第2基板20と直接接合することが可能となり、上述したデバイス用基板10の製造が可能となる。また、本実施形態では、第1基板11が、導電層(導電回路層13)を絶縁基板12の表裏に1層ずつ有する構成となっているので、複数層ずつ有しているものよりも、金属部18の形成が容易になり、抵抗溶接も容易となる。   In addition, since the first substrate 11 includes the two metal portions 18 and 18 and the common pads 17A and 17A, the first substrate 11 can be directly bonded to the second substrate 20, and the device substrate 10 described above can be manufactured. Is possible. Moreover, in this embodiment, since the 1st board | substrate 11 becomes a structure which has a conductive layer (conductive circuit layer 13) one layer each on the front and back of the insulated substrate 12, rather than what has multiple layers each. Formation of the metal part 18 is facilitated, and resistance welding is also facilitated.

[第2実施形態]
本実施形態は、2つのスルーホール導体15と表裏の導電回路層13との接続において、上記第1実施形態と異なる。即ち、本実施形態の第1基板11では、図15に示すように、B面12B側の導電回路層13に、2つのスルーホール導体15が共通して接続される共通パッド17A(本発明の「第1接続部」に相当する)が設けられる一方、F面12F側の導電回路層13に、それら2つのスルーホール導体15が1つずつ独立して接続される2つの独立パッド17B,17B(本発明の「第2接続部」に相当する)が設けられている。
[Second Embodiment]
The present embodiment is different from the first embodiment in the connection between the two through-hole conductors 15 and the conductive circuit layers 13 on the front and back sides. That is, in the first substrate 11 of the present embodiment, as shown in FIG. 15, a common pad 17A (in the present invention) in which two through-hole conductors 15 are commonly connected to the conductive circuit layer 13 on the B surface 12B side. The two independent pads 17B and 17B are connected to the conductive circuit layer 13 on the F-plane 12F side, and the two through-hole conductors 15 are independently connected to each other. (Corresponding to the “second connecting portion” of the present invention).

そして、第1基板11の2つの独立パッド17B,17Bが第2基板20の接合用パッド34Bに直接、抵抗溶接されることにより、第1基板11と第2基板20とが接合されている。   The two independent pads 17B and 17B of the first substrate 11 are directly resistance-welded to the bonding pads 34B of the second substrate 20, whereby the first substrate 11 and the second substrate 20 are bonded.

[第3実施形態]
上記第1及び第2実施形態では、第1基板11において、絶縁基板12の表裏に積層されている導電層(導電回路層13)が1層ずつであったが、本実施形態では、図16に示すように、2層ずつ(導電回路層13及び導電層11X)となっている。
[Third Embodiment]
In the first and second embodiments, the first substrate 11 has one conductive layer (conductive circuit layer 13) laminated on the front and back of the insulating substrate 12. However, in the present embodiment, FIG. As shown in FIG. 2, the two layers are formed (conductive circuit layer 13 and conductive layer 11X).

詳細には、絶縁基板12の表裏の両面に、導電回路層13の上から絶縁樹脂層11Zと導電層11Xとが積層されている。絶縁基板12を貫通する2つのスルーホール導体15が、表裏の導電回路層13,13を介して接続されていて、これらスルーホール導体15上に、導電回路層13と導電層11Xとを接続するビア導体11Dが形成されている。そして、F面12F側の導電層11XとB面12B側の導電層11Xとに、2つのスルーホール導体15上の各ビア導体11D,11Dが1つずつ独立して接続されている独立パッド17B,17Bが設けられている。   Specifically, the insulating resin layer 11Z and the conductive layer 11X are laminated on the front and back surfaces of the insulating substrate 12 from above the conductive circuit layer 13. Two through-hole conductors 15 penetrating the insulating substrate 12 are connected via the front and back conductive circuit layers 13 and 13, and the conductive circuit layer 13 and the conductive layer 11 </ b> X are connected to the through-hole conductors 15. A via conductor 11D is formed. The via pads 11D and 11D on the two through-hole conductors 15 are independently connected to the conductive layer 11X on the F surface 12F side and the conductive layer 11X on the B surface 12B side, respectively. , 17B are provided.

なお、本実施形態では、スルーホール導体15及びビア導体11D,11Dと、独立パッド17B,17Bのうちそれらの上方部分と、から金属部18が形成される。また、本実施形態では、2つの金属部18を接続する導電層が内側のものであったが、最外のものであってもよい。また、導電層が絶縁基板12の表裏に3層以上ずつ積層されている構成であってもよい。   In the present embodiment, the metal portion 18 is formed from the through-hole conductor 15 and the via conductors 11D and 11D and the upper portions of the independent pads 17B and 17B. In the present embodiment, the conductive layer connecting the two metal portions 18 is the inner one, but it may be the outermost one. Alternatively, a configuration in which three or more conductive layers are stacked on the front and back of the insulating substrate 12 may be employed.

[他の実施形態]
本発明は、上記実施形態に限定されるものではなく、例えば、以下に説明するような実施形態も本発明の技術的範囲に含まれ、さらに、下記以外にも要旨を逸脱しない範囲内で種々変更して実施することができる。
[Other Embodiments]
The present invention is not limited to the above-described embodiment. For example, the embodiments described below are also included in the technical scope of the present invention, and various modifications are possible within the scope of the invention other than the following. It can be changed and implemented.

(1)上記実施形態では、電子部品が複数実装されていたが、1つであってもよい。この場合であっても、第1基板11上に電子部品を配置すれば、電子デバイス100全体の厚さのバランスを良くすることができる。 (1) In the above embodiment, a plurality of electronic components are mounted, but one electronic component may be provided. Even in this case, if electronic components are arranged on the first substrate 11, the thickness balance of the entire electronic device 100 can be improved.

(2)上記実施形態では、第1基板11のF面12F側における受容部19以外の部分にソルダーレジスト層16が積層されていたが、第1基板11のF面12F側にソルダーレジスト層が積層されていない構成であってもよい。 (2) In the above embodiment, the solder resist layer 16 is laminated on a portion other than the receiving portion 19 on the F surface 12F side of the first substrate 11, but the solder resist layer is disposed on the F surface 12F side of the first substrate 11. The structure which is not laminated | stacked may be sufficient.

(3)第1基板11は、第2基板20の代わりに、放熱部材(例えば、ヒートシンク、熱拡散シートなど)と抵抗溶接によって接合されてもよい。 (3) The first substrate 11 may be joined to a heat radiating member (for example, a heat sink, a heat diffusion sheet, etc.) by resistance welding instead of the second substrate 20.

10 デバイス用基板(複合配線板)
11 第1基板(配線板)
12 絶縁基板(絶縁層、第1中央絶縁層)
13 導電回路層(導電層)
13B めっき層
15 スルーホール導体
17A 共通パッド(第1接続部)
17B 独立パッド(第2接続部)
18 金属部
20 第2基板
21 コア基板(絶縁層、第2中央絶縁層)
23 導電回路層(導電層)
31 絶縁樹脂層(絶縁層)
32 導電層
34B 接合用パッド(第3接続部)
38 第1実装部
39 第2実装部
95,96 電極(溶接ツール)
90,91 電子部品(第1部品、第2部品)
100 電子デバイス
10 Device substrate (composite wiring board)
11 First board (wiring board)
12 Insulating substrate (insulating layer, first central insulating layer)
13 Conductive circuit layer (conductive layer)
13B Plating layer 15 Through-hole conductor 17A Common pad (first connection part)
17B Independent pad (2nd connection part)
18 Metal part 20 Second substrate 21 Core substrate (insulating layer, second central insulating layer)
23 Conductive circuit layer (conductive layer)
31 Insulating resin layer (insulating layer)
32 Conductive layer 34B Bonding pad (third connection part)
38 1st mounting part 39 2nd mounting part 95,96 Electrode (welding tool)
90, 91 Electronic parts (first part, second part)
100 electronic devices

Claims (14)

めっき層を有する導電層と、絶縁層と、が交互に積層されてなる配線板であって、
少なくとも一部が前記導電層の前記めっき層と一体に形成されていて、表裏の最外の前記導電層間を接続し、かつ、表裏の両面に露出すると共に、少なくとも1つの前記導電層を介して互いに導通する2つの金属部を有し、
2つの前記金属部が溶接の母材からなる。
A wiring board in which conductive layers having plating layers and insulating layers are alternately laminated,
At least a portion is formed integrally with the plating layer of the conductive layer, connects the outermost conductive layers on the front and back sides, and is exposed on both sides of the front and back sides, and through at least one conductive layer Having two metal parts conducting to each other,
The two metal parts are made of a welding base material.
請求項1に記載の配線板であって、
2つの前記金属部が抵抗溶接の母材からなる。
The wiring board according to claim 1,
The two metal parts are made of a resistance welding base material.
請求項1又は2に記載の配線板であって、
表裏の一方の最外の前記導電層には、2つの前記金属部が共通して接続されかつ、2つの前記金属部の一方の面を含む第1接続部が設けられ、
表裏の他方の最外の前記導電層には、2つの前記金属部がそれぞれ別個に接続されかつ、前記金属部の他方の面をそれぞれ含む2つの第2接続部が設けられている。
The wiring board according to claim 1 or 2,
The outermost conductive layer on one side of the front and back is provided with a first connection part in which two metal parts are connected in common and includes one surface of the two metal parts,
The second outermost conductive layer on the front and back sides is provided with two second connection portions to which the two metal portions are separately connected and each includes the other surface of the metal portion.
請求項1乃至3の何れか1の請求項に記載の配線板としての第1基板と、
導電層と絶縁層とが交互に積層されてなり、表裏の一方の最外の前記導電層に、前記第1基板の2つの前記金属部が共通して接合されている第3接続部を有する第2基板と、を備える複合配線板。
A first substrate as a wiring board according to any one of claims 1 to 3,
A conductive layer and an insulating layer are alternately laminated, and the third connection portion in which the two metal portions of the first substrate are commonly bonded to the outermost conductive layer on one of the front and back sides. And a second wiring board.
請求項3に記載の配線板としての第1基板と、
導電層と絶縁層とが交互に積層されてなり、表裏の一方の最外の前記導電層に、前記第1基板の2つの前記第2接続部が共通して接合されている第3接続部を有する第2基板と、を備える複合配線板。
A first substrate as a wiring board according to claim 3;
A third connection portion, in which conductive layers and insulating layers are alternately stacked, and the two second connection portions of the first substrate are commonly bonded to the outermost conductive layer on the front and back sides. A composite wiring board comprising: a second substrate having:
請求項4又は5に記載の複合配線板であって、
前記第1基板は、前記絶縁層としての第1中央絶縁層の表裏に前記導電層を1層ずつ有する一方、前記第2基板は、前記絶縁層としての第2中央絶縁層の表裏に前記導電層を複数層ずつ有している。
The composite wiring board according to claim 4 or 5,
The first substrate has one conductive layer on each side of the first central insulating layer as the insulating layer, while the second substrate has the conductive layer on the front and back of the second central insulating layer as the insulating layer. A plurality of layers are provided.
請求項4乃至6の何れか1の請求項に記載の複合配線板であって、
前記第1基板のうち、前記第2基板側の最外の前記導電層に、第1部品を実装するための第1実装部が設けられ、
前記第2基板のうち、前記第1基板側と反対側の最外の前記導電層に、前記第1部品よりも前記第1基板の板厚方向において小さい第2部品を実装するための第2実装部が設けられている。
A composite wiring board according to any one of claims 4 to 6,
A first mounting portion for mounting a first component is provided on the outermost conductive layer on the second substrate side of the first substrate,
A second component for mounting a second component smaller in the plate thickness direction of the first substrate than the first component on the outermost conductive layer on the opposite side to the first substrate side of the second substrate. A mounting part is provided.
めっき層を有する導電層と、絶縁層と、が交互に積層されてなる配線板の製造方法であって、
表裏の最外の前記導電層間を接続し、かつ、表裏の両面に露出すると共に、少なくとも1つの前記導電層を介して互いに導通する2つの金属部を形成することと、
前記金属部を、前記導電層の前記めっき層と一体に形成することと、
2つの前記金属部を溶接の母材から構成することと、を行う。
A method for manufacturing a wiring board in which conductive layers having plating layers and insulating layers are alternately laminated,
Forming two metal portions that connect the outermost conductive layers on the front and back sides and that are exposed on both sides of the front and back sides and that are electrically connected to each other through at least one conductive layer;
Forming the metal part integrally with the plating layer of the conductive layer;
The two metal parts are made of a welding base material.
請求項8に記載の配線板の製造方法であって、
2つの前記金属部を抵抗溶接の母材から構成する。
It is a manufacturing method of the wiring board according to claim 8,
Two said metal parts are comprised from the base material of resistance welding.
請求項8乃至9の何れか1の請求項に記載の配線板の製造方法であって、
表裏の一方の最外の前記導電層に、2つの前記金属部が共通して接続されかつ、2つの前記金属部の一方の面を含む第1接続部を設け、
表裏の他方の最外の前記導電層に、2つの前記金属部がそれぞれ別個に接続されかつ、前記金属部の他方の面をそれぞれ含む2つの第2接続部を設ける。
A method for manufacturing a wiring board according to any one of claims 8 to 9,
The first outermost conductive layer on one side of the front and back is provided with a first connection part in which the two metal parts are connected in common and includes one surface of the two metal parts,
Two second connection portions are provided on the outermost conductive layer on the other side of the front and back sides, and the two metal portions are separately connected to each other and each include the other surface of the metal portion.
請求項8乃至10の何れか1の請求項に記載の配線板の製造方法により製造された配線板としての第1基板と、導電層と絶縁層とが交互に積層されてなる第2基板と、を接合してなる複合配線板の製造方法であって、
前記第2基板における表裏の一方の最外の前記導電層に、前記第1基板の2つの前記金属部が共通して当接可能な第3接続部を形成することと、
前記第3接続部と2つの前記金属部とが当接するように、前記第2基板上に前記第1基板を重ねることと、
2つの前記金属部のうち前記第3接続部側と反対側の面に溶接ツールを接触させて、前記第1基板と前記第2基板とを抵抗溶接により接合することと、を行う。
The 1st board | substrate as a wiring board manufactured by the manufacturing method of the wiring board of any one of Claims 8 thru | or 10, The 2nd board | substrate by which an electroconductive layer and an insulating layer are laminated | stacked alternately, , A method of manufacturing a composite wiring board formed by bonding,
Forming a third connection portion in which the two metal portions of the first substrate can be contacted in common with the outermost conductive layer on one of the front and back sides of the second substrate;
Stacking the first substrate on the second substrate such that the third connection portion and the two metal portions are in contact with each other;
A welding tool is brought into contact with the surface of the two metal portions opposite to the third connection portion, and the first substrate and the second substrate are joined by resistance welding.
請求項10に記載の配線板の製造方法により製造された配線板としての第1基板と、導電層と絶縁層とが交互に積層されてなる第2基板と、を接合してなる複合配線板の製造方法であって、
前記第2基板における表裏の一方の最外の前記導電層に、前記第1基板の2つの前記第2接続部が共通して当接可能な第3接続部を形成することと、
前記第3接続部と2つの前記第2接続部とが当接するように、前記第2基板上に前記第1基板を重ねることと、
前記第1基板の前記第1接続部のうち2つの前記金属部上に溶接ツールを接触させて、前記第1基板と前記第2基板とを抵抗溶接により接合することと、を行う。
A composite wiring board formed by bonding a first substrate as a wiring board manufactured by the method for manufacturing a wiring board according to claim 10 and a second substrate in which conductive layers and insulating layers are alternately stacked. A manufacturing method of
Forming, on the outermost conductive layer on one of the front and back surfaces of the second substrate, a third connection portion on which the two second connection portions of the first substrate can come into contact in common;
Stacking the first substrate on the second substrate so that the third connection portion and the two second connection portions are in contact with each other;
A welding tool is brought into contact with two metal portions of the first connection portion of the first substrate, and the first substrate and the second substrate are joined by resistance welding.
請求項11又は12に記載の複合配線板の製造方法であって、
前記第1基板には、前記絶縁層としての第1中央絶縁層の表裏に前記導電層を1層ずつ形成する一方、前記第2基板には、前記絶縁層としての第2中央絶縁層の表裏に前記導電層を複数層ずつ形成する。
A method for manufacturing a composite wiring board according to claim 11 or 12,
On the first substrate, the conductive layers are formed one by one on the front and back of the first central insulating layer as the insulating layer, while on the front and back of the second central insulating layer as the insulating layer on the second substrate. A plurality of the conductive layers are formed.
請求項11乃至13の何れか1の請求項に記載の複合配線板の製造方法であって、
前記第1基板のうち、前記第2基板側の最外の前記導電層に、第1部品を実装するための第1実装部を設け、
前記第2基板のうち、前記第1基板側と反対側の最外の前記導電層に、前記第1部品よりも前記第1基板の板厚方向において小さい第2部品を実装するための第2実装部を設ける。
A method of manufacturing a composite wiring board according to any one of claims 11 to 13,
A first mounting portion for mounting a first component is provided on the outermost conductive layer on the second substrate side of the first substrate,
A second component for mounting a second component smaller in the plate thickness direction of the first substrate than the first component on the outermost conductive layer on the opposite side to the first substrate side of the second substrate. A mounting part is provided.
JP2016123642A 2016-06-22 2016-06-22 Wiring board, composite wiring board including the wiring board, and method for their manufacturing Pending JP2017228644A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11506937B2 (en) 2020-06-03 2022-11-22 Nichia Corporation Planar light source and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11506937B2 (en) 2020-06-03 2022-11-22 Nichia Corporation Planar light source and method of manufacturing the same
US12124131B2 (en) 2020-06-03 2024-10-22 Nichia Corporation Planar light source and method of manufacturing the same

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