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JP2017038031A - Light emitting device and manufacturing method thereof - Google Patents

Light emitting device and manufacturing method thereof Download PDF

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Publication number
JP2017038031A
JP2017038031A JP2015160170A JP2015160170A JP2017038031A JP 2017038031 A JP2017038031 A JP 2017038031A JP 2015160170 A JP2015160170 A JP 2015160170A JP 2015160170 A JP2015160170 A JP 2015160170A JP 2017038031 A JP2017038031 A JP 2017038031A
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light emitting
emitting device
light
gantry
adhesive
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今井 貞人
Sadato Imai
貞人 今井
加藤 達也
Tatsuya Kato
達也 加藤
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Citizen Electronics Co Ltd
Citizen Watch Co Ltd
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Citizen Electronics Co Ltd
Citizen Watch Co Ltd
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    • H10W72/075
    • H10W72/884
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Abstract

【課題】発光素子の発光により発生する熱をより効率的に放熱可能な発光装置を提供する。【解決手段】発光装置1は、実装領域11を有する実装基板10と、実装領域11の表面に裏面が接着された多孔質材料で形成された架台40と、架台40の表面に裏面が接着された発光素子30と、発光素子30の表面に形成された素子電極32、33に接続されたボンディングワイヤ31と、架台40、発光素子30及びボンディングワイヤ31を封止する封止樹脂60と、を有する。【選択図】図1A light emitting device capable of more efficiently dissipating heat generated by light emission of a light emitting element is provided. A light emitting device includes a mounting substrate having a mounting area, a mount formed of a porous material having a back surface bonded to the surface of the mounting area, and a back surface bonded to the surface of the mount. A light emitting element 30, a bonding wire 31 connected to element electrodes 32 and 33 formed on the surface of the light emitting element 30, and a sealing resin 60 for sealing the mount 40, the light emitting element 30, and the bonding wire 31. Have. [Selection] Figure 1

Description

本発明は、発光装置及びその製造方法に関する。   The present invention relates to a light emitting device and a method for manufacturing the same.

セラミック基板及び金属基板などの汎用基板の上にLED(発光ダイオード)素子などの発光素子が実装されたCOB(Chip On Board)とも称される発光装置が知られている。こうした発光装置では、蛍光体を含有する樹脂により例えば青色光を発光するLED素子を封止し、LED素子からの光により蛍光体を励起させて得られる光を混合させることにより、用途に応じて白色光などを得ている。発光装置では、発光素子の輝度が向上するに従って、発光素子の発光により発生する熱が増加するが、発光素子の発光により発生した熱が放熱されないと、発光素子の周囲温度が上昇して発光素子の発光強度が低下するおそれがある。発光素子の発光強度の低下を防止するために、発光素子の発光により発生した熱を放熱する種々の技術が知られている。   2. Description of the Related Art A light emitting device called a COB (Chip On Board) in which a light emitting element such as an LED (light emitting diode) element is mounted on a general-purpose substrate such as a ceramic substrate or a metal substrate is known. In such a light-emitting device, for example, an LED element that emits blue light is sealed with a resin containing a phosphor, and light obtained by exciting the phosphor with light from the LED element is mixed, depending on the application. White light is obtained. In the light emitting device, as the luminance of the light emitting element is improved, heat generated by light emission of the light emitting element increases. However, if the heat generated by light emission of the light emitting element is not dissipated, the ambient temperature of the light emitting element rises and the light emitting element There is a possibility that the emission intensity of the light source will be reduced. In order to prevent a decrease in light emission intensity of the light emitting element, various techniques for releasing heat generated by light emission of the light emitting element are known.

例えば、特許文献1には、金属体が厚み方向に貫通して設けられたセラミックスで形成された絶縁基部と、絶縁基部の表面に積層されたセラミックスで形成された上側表層絶縁層と、上側表層絶縁層に搭載された発光素子を有する発光装置が記載される。特許文献1に記載される発光装置では、上側表層絶縁層は、金属体の表面に位置し発光素子が搭載される上側緻密質部と、上側緻密質部の周囲に形成され上側緻密質部よりも緻密度が低い上側多孔質部により形成される。   For example, Patent Document 1 discloses an insulating base formed of ceramics provided with a metal body penetrating in the thickness direction, an upper surface insulating layer formed of ceramics laminated on the surface of the insulating base, and an upper surface layer. A light emitting device having a light emitting element mounted on an insulating layer is described. In the light emitting device described in Patent Document 1, the upper surface insulating layer is formed on the surface of the metal body, the upper dense portion on which the light emitting element is mounted, and the upper dense portion formed around the upper dense portion. Is formed by the upper porous portion having a low density.

特許文献1に記載される発光装置では、発光素子の発光により発生した熱が、上側緻密質部を介して金属体に伝導して拡散されることにより、放熱特性が向上する。また、発光素子が搭載される上側緻密質部の周囲に上側多孔質部が配置されることにより、上側多孔質部中のボイド粒界で発光素子からの光が乱反射することにより、基板表面における反射率を向上し、発光装置の発光効率が向上する。   In the light-emitting device described in Patent Document 1, heat generated by light emission from the light-emitting element is conducted and diffused to the metal body through the upper dense portion, thereby improving heat dissipation characteristics. Further, by arranging the upper porous portion around the upper dense portion on which the light emitting element is mounted, light from the light emitting element is irregularly reflected at the void grain boundary in the upper porous portion, so that The reflectance is improved and the light emission efficiency of the light emitting device is improved.

特開2011−205009号公報JP 2011-205009 A

しかしながら、特許文献1に記載される発光装置では、発光素子は、上側表層絶縁層及び金属体よりも熱伝導率が低い樹脂を含む接着剤により上側表層絶縁層に接着されるため放熱効率が低下して、発光素子の温度が上昇し発光効率が低下するおそれがある。   However, in the light-emitting device described in Patent Document 1, the light-emitting element is bonded to the upper surface insulating layer by an adhesive containing a resin having a lower thermal conductivity than the upper surface insulating layer and the metal body, and thus the heat dissipation efficiency is reduced. As a result, the temperature of the light emitting element rises and the light emission efficiency may decrease.

そこで、本発明は、発光素子の発光により発生する熱をより効率的に放熱可能な発光装置を提供することを目的とする。   In view of the above, an object of the present invention is to provide a light emitting device that can more efficiently dissipate heat generated by light emission of a light emitting element.

上記目的を達成するために、本発明に係る発光装置は、実装領域を有する実装基板と、実装領域の表面に裏面が接着された多孔質材料で形成された架台と、架台の表面に裏面が接着された発光素子と、発光素子の表面に形成された素子電極に接続されたボンディングワイヤと、架台、発光素子及びボンディングワイヤを封止する封止樹脂とを有する。   In order to achieve the above object, a light emitting device according to the present invention includes a mounting substrate having a mounting region, a pedestal formed of a porous material having a back surface bonded to the surface of the mounting region, and a back surface on the surface of the pedestal. It has a bonded light emitting element, a bonding wire connected to an element electrode formed on the surface of the light emitting element, and a sealing resin that seals the gantry, the light emitting element, and the bonding wire.

さらに、本発明に係る発光装置は、複数の発光素子と、それぞれが複数の発光素子の何れか1つに対応するように配置される複数の架台を有することが好ましい。   Furthermore, the light-emitting device according to the present invention preferably includes a plurality of light-emitting elements and a plurality of mounts that are arranged so as to correspond to any one of the plurality of light-emitting elements.

さらに、本発明に係る発光装置では、架台には、複数の発光素子が接着されることが好ましい。   Furthermore, in the light emitting device according to the present invention, it is preferable that a plurality of light emitting elements are bonded to the gantry.

さらに、本発明に係る発光装置は、架台の表面に形成される反射層を更に有することが好ましい。   Furthermore, the light emitting device according to the present invention preferably further includes a reflective layer formed on the surface of the gantry.

さらに、本発明に係る発光装置では、架台は、多孔質セラミックスであることが好ましい。   Furthermore, in the light emitting device according to the present invention, the gantry is preferably made of porous ceramics.

さらに、本発明に係る発光装置では、実装基板は、一方の面に架台が配置された金属板を含むことが好ましい。   Furthermore, in the light emitting device according to the present invention, it is preferable that the mounting substrate includes a metal plate on which one frame is disposed.

また、本発明に係る発光装置を製造する製造方法は、多孔質材料で形成された架台の表面に発光素子の裏面を接着し、実装基板の実装領域の表面に架台の裏面を接着し、発光素子表面に形成された素子電極にボンディングワイヤを接続し、架台、発光素子及びボンディングワイヤを封止する封止樹脂を充填することを含む。   Further, the manufacturing method for manufacturing the light emitting device according to the present invention includes bonding the back surface of the light emitting element to the surface of the mount made of a porous material, and bonding the back surface of the mount to the surface of the mounting area of the mounting substrate. The method includes connecting a bonding wire to an element electrode formed on the element surface and filling a base, a light emitting element, and a sealing resin for sealing the bonding wire.

本発明では、発光素子の発光により発生する熱をより効率的に放熱可能な発光装置を提供するが可能となる。   According to the present invention, it is possible to provide a light emitting device capable of more efficiently dissipating heat generated by light emission of the light emitting element.

(A)は第1実施形態に係る発光装置の斜視図であり、(B)は(A)に示す発光装置の断面図である。(A) is a perspective view of the light-emitting device which concerns on 1st Embodiment, (B) is sectional drawing of the light-emitting device shown to (A). (A)は図1に示す発光装置の部分拡大断面図であり、(B)は(A)に示す発光装置の部分拡大断面図である。(A) is the elements on larger scale of the light-emitting device shown in FIG. 1, (B) is the elements on larger scale of the light-emitting device shown in (A). (A)は図1に示す発光装置の第1製造工程を示す斜視図であり、(B)は(A)に対応する断面図である。(A) is a perspective view which shows the 1st manufacturing process of the light-emitting device shown in FIG. 1, (B) is sectional drawing corresponding to (A). (A)は図1に示す発光装置の第2製造工程を示す斜視図であり、(B)は(A)に対応する断面図である。(A) is a perspective view which shows the 2nd manufacturing process of the light-emitting device shown in FIG. 1, (B) is sectional drawing corresponding to (A). (A)は図1に示す発光装置の第3製造工程を示す斜視図であり、(B)は(A)に対応する断面図である。(A) is a perspective view which shows the 3rd manufacturing process of the light-emitting device shown in FIG. 1, (B) is sectional drawing corresponding to (A). (A)は図1に示す発光装置の第4製造工程を示す斜視図であり、(B)は(A)に対応する断面図である。(A) is a perspective view which shows the 4th manufacturing process of the light-emitting device shown in FIG. 1, (B) is sectional drawing corresponding to (A). (A)は図1に示す発光装置の第5製造工程を示す斜視図であり、(B)は(A)に対応する断面図である。(A) is a perspective view which shows the 5th manufacturing process of the light-emitting device shown in FIG. 1, (B) is sectional drawing corresponding to (A). (A)は図1に示す発光装置の第6製造工程を示す斜視図であり、(B)は(A)に対応する断面図である。(A) is a perspective view which shows the 6th manufacturing process of the light-emitting device shown in FIG. 1, (B) is sectional drawing corresponding to (A). (A)は図1に示す発光装置の第7製造工程を示す斜視図であり、(B)は(A)に対応する断面図である。(A) is a perspective view which shows the 7th manufacturing process of the light-emitting device shown in FIG. 1, (B) is sectional drawing corresponding to (A). (A)は第1比較例に係る発光装置の部分断面図であり、(B)は第2比較例に係る発光装置の部分断面図であり、(C)は図1に示す発光装置の部分断面図である。(A) is a partial cross-sectional view of the light emitting device according to the first comparative example, (B) is a partial cross sectional view of the light emitting device according to the second comparative example, and (C) is a portion of the light emitting device shown in FIG. It is sectional drawing. (A)〜(C)は図10(A)に示す発光装置におけるLED素子の実装状態を示す図であり、(D)〜(F)は図1に示す発光装置におけるLED素子の実装状態を示す図である。(A)-(C) is a figure which shows the mounting state of the LED element in the light-emitting device shown to FIG. 10 (A), (D)-(F) shows the mounting state of the LED element in the light-emitting device shown in FIG. FIG. (A)は第2実施形態に係る発光装置の斜視図であり、(B)は(A)に示す発光装置の断面図である。(A) is a perspective view of the light-emitting device which concerns on 2nd Embodiment, (B) is sectional drawing of the light-emitting device shown to (A). (A)は第3実施形態に係る発光装置の斜視図であり、(B)は(A)に示す発光装置の断面図である。(A) is a perspective view of the light-emitting device which concerns on 3rd Embodiment, (B) is sectional drawing of the light-emitting device shown to (A).

以下、図面を参照しつつ、発光装置及びその製造方法について説明する。ただし、本発明は図面又は以下に記載される実施形態には限定されないことを理解されたい。   Hereinafter, a light emitting device and a manufacturing method thereof will be described with reference to the drawings. However, it should be understood that the present invention is not limited to the drawings or the embodiments described below.

(実施形態に係る発光装置の概要)
実施形態に係る発光装置では、発光素子は、多孔質材料で形成された架台を介して実装基板の実装領域に接着される。多孔質材料で形成された架台と発光素子及び実装基板とが接着剤により接着されるときに、余分な接着剤が架台の内部に毛細管現象により浸透することにより、架台と発光素子及び実装基板との界面の接着剤の厚さは、最小限の厚さになる。熱伝導率が低い接着剤の厚さが最小限の厚さになることにより、発光素子を実装領域に接着剤によって接着した場合と比較して、実施形態に係る発光装置の放熱効率は、向上する。
(Outline of Light Emitting Device According to Embodiment)
In the light emitting device according to the embodiment, the light emitting element is bonded to the mounting region of the mounting substrate via a gantry formed of a porous material. When the pedestal formed of a porous material, the light emitting element, and the mounting substrate are bonded by an adhesive, excess adhesive penetrates into the pedestal by capillarity, so that the gantry, the light emitting element, and the mounting substrate The thickness of the adhesive at the interface becomes a minimum thickness. The heat dissipation efficiency of the light-emitting device according to the embodiment is improved as compared with the case where the light-emitting element is bonded to the mounting region with the adhesive because the thickness of the adhesive with low thermal conductivity is minimized. To do.

(第1実施形態に係る発光装置の構造及び機能)
図1(A)は完成品としての第1実施形態に係る発光装置の斜視図であり、図1(B)は図1(A)のIA-IB線に沿った断面図である。
(Structure and function of light emitting device according to the first embodiment)
FIG. 1A is a perspective view of the light emitting device according to the first embodiment as a finished product, and FIG. 1B is a cross-sectional view taken along line IA-IB in FIG.

発光装置1は、発光素子としてLED素子を含み、例えば照明用LED、LED電球などの種々の照明装置として利用される。発光装置1は、実装基板10と、回路基板20と、複数のLED素子30と、複数の架台40と、樹脂枠50と、封止樹脂60と、熱伝導部材61とを有する。   The light emitting device 1 includes an LED element as a light emitting element, and is used as various lighting devices such as an illumination LED and an LED bulb. The light emitting device 1 includes a mounting substrate 10, a circuit substrate 20, a plurality of LED elements 30, a plurality of mounts 40, a resin frame 50, a sealing resin 60, and a heat conducting member 61.

実装基板10は、一例として正方形の形状を有し、その表面の中央にLED素子30が実装される円形の実装領域11を有する金属基板である。実装基板10は、LED素子30により発生した熱を放熱させる放熱基板としても機能するため、例えば、耐熱性及び放熱性に優れたアルミニウムで構成される。なお、実装基板10の材質は、耐熱性と放熱性に優れたものであれば、例えば銅など、別の金属又はセラミックスでもよい。   The mounting substrate 10 has a square shape as an example, and is a metal substrate having a circular mounting region 11 on the surface of which the LED element 30 is mounted. Since the mounting substrate 10 also functions as a heat dissipation substrate that dissipates heat generated by the LED elements 30, it is made of, for example, aluminum having excellent heat resistance and heat dissipation. The material of the mounting substrate 10 may be another metal such as copper or ceramics as long as it is excellent in heat resistance and heat dissipation.

回路基板20は、一例として、実装基板10と同じ大きさの正方形の形状を有し、その中心部に円形の開口部21を有する。回路基板20は、その裏面が例えば接着シートにより実装基板10の上に貼り付けられて固定される。回路基板20の表面には、開口部21を取り囲むように、LED素子30の配線パターン23が形成される。また、回路基板20の表面で対角に位置する2つの角部には、発光装置1を外部電源に接続するための一対の接続電極24が形成される。接続電極24の一方はアノードであり、接続電極24の他方はカソードである。一対の接続電極24が外部電源に接続されて電圧が印加されることにより、発光装置1は発光する。   As an example, the circuit board 20 has a square shape having the same size as the mounting board 10 and has a circular opening 21 at the center thereof. The back surface of the circuit board 20 is fixed on the mounting substrate 10 by an adhesive sheet, for example. A wiring pattern 23 of the LED element 30 is formed on the surface of the circuit board 20 so as to surround the opening 21. In addition, a pair of connection electrodes 24 for connecting the light emitting device 1 to an external power source are formed at two corners located diagonally on the surface of the circuit board 20. One of the connection electrodes 24 is an anode, and the other of the connection electrodes 24 is a cathode. The light emitting device 1 emits light when the pair of connection electrodes 24 are connected to an external power source and a voltage is applied.

図2(A)は図1(A)において矢印Aで示される部分の部分拡大断面図であり、図2(B)は図2(A)において矢印Bで示される部分の部分拡大断面図である。   2A is a partially enlarged sectional view of a portion indicated by an arrow A in FIG. 1A, and FIG. 2B is a partially enlarged sectional view of a portion indicated by an arrow B in FIG. is there.

複数のLED素子30のそれぞれは、発光素子の一例であり、例えば発光波長帯域が450〜460nm程度の青色光を発光する青色LEDである。複数のLED素子30のそれぞれは、回路基板20の開口部21から露出している実装基板10の実装領域11に、架台40を介して実装される。複数のLED素子30のそれぞれは、実装基板10の実装領域11に格子状に配列される。ここでは、21個のLED素子30が実装された例が示される。また、LED素子30は表面に一対の素子電極32及び33を有し、隣接するLED素子30の素子電極32は、ボンディングワイヤ31により電気的に接続される。開口部21の外周側に位置するLED素子30の素子電極33に一端が接続されたボンディングワイヤ31の他端は、回路基板20の配線パターン23に接続される。配線パターン23と複数のLED素子30の素子電極32及び33を直列接続するにより、複数のLED素子30のそれぞれは、ボンディングワイヤ31を介して配線パターン23から電流が供給される。   Each of the plurality of LED elements 30 is an example of a light emitting element, and is, for example, a blue LED that emits blue light having an emission wavelength band of about 450 to 460 nm. Each of the plurality of LED elements 30 is mounted on the mounting region 11 of the mounting substrate 10 exposed from the opening 21 of the circuit substrate 20 via the mount 40. Each of the plurality of LED elements 30 is arranged in a grid pattern in the mounting region 11 of the mounting substrate 10. Here, an example in which 21 LED elements 30 are mounted is shown. The LED element 30 has a pair of element electrodes 32 and 33 on the surface, and the element electrodes 32 of the adjacent LED elements 30 are electrically connected by bonding wires 31. The other end of the bonding wire 31 whose one end is connected to the element electrode 33 of the LED element 30 located on the outer peripheral side of the opening 21 is connected to the wiring pattern 23 of the circuit board 20. By connecting the wiring pattern 23 and the device electrodes 32 and 33 of the plurality of LED elements 30 in series, each of the plurality of LED elements 30 is supplied with current from the wiring pattern 23 via the bonding wires 31.

複数の架台40のそれぞれは、熱伝導率の比較的高い多孔質材料で形成された立方体の部材であり、一例ではアルミナを含む多孔質セラミックにより形成される。また、他の例では、架台40は、アルミニウム等の金属の紛体を加熱等により固着して形成された多孔質金属により形成される。一例では、帯域が450〜460nmである光を反射する時の架台40の反射率は、97%である。複数の架台40のそれぞれは、複数のLED素子30の何れか1つに対応するように配置される。架台40の表面はLED素子30の裏面と接着され、架台40の裏面は実装基板10の表面に接着される。架台40は、実装基板10の表面に配置された接着剤に押圧されることにより、実装基板10の表面に接着される。架台40が実装基板10の表面に押圧されるとき、図2(B)において矢印Cで示されるように、実装基板10の表面に配置された接着剤の一部は実装基板10の表面に位置して架台40の裏面との接着に寄与する。しかしながら、余分な接着剤は、架台40が実装基板10の表面に押圧されるときに、多孔質材料で形成された架台40の内部に毛細管現象により浸透する。同様に、架台40の表面とLED素子30の裏面とを接着するとき、図2(B)において矢印Dで示されるように、接着剤の一部は接着に寄与し、余分な接着剤は多孔質材料で形成された架台40の内部に毛細管現象により浸透する。架台40の裏面と実装基板10の表面とを接着する接着剤は、所望の特性を有するものが採用される。例えば、架台40の裏面と実装基板10の表面とを接着する接着剤は、シリコーン樹脂である。   Each of the plurality of mounts 40 is a cubic member formed of a porous material having a relatively high thermal conductivity, and is formed of a porous ceramic containing alumina, for example. In another example, the gantry 40 is formed of a porous metal formed by fixing a metal powder such as aluminum by heating or the like. In one example, the reflectivity of the gantry 40 when reflecting light having a band of 450 to 460 nm is 97%. Each of the plurality of mounts 40 is disposed so as to correspond to any one of the plurality of LED elements 30. The surface of the gantry 40 is bonded to the back surface of the LED element 30, and the back surface of the gantry 40 is bonded to the surface of the mounting substrate 10. The gantry 40 is bonded to the surface of the mounting substrate 10 by being pressed by an adhesive disposed on the surface of the mounting substrate 10. When the gantry 40 is pressed against the surface of the mounting substrate 10, a part of the adhesive disposed on the surface of the mounting substrate 10 is positioned on the surface of the mounting substrate 10 as indicated by an arrow C in FIG. This contributes to adhesion to the back surface of the gantry 40. However, when the gantry 40 is pressed against the surface of the mounting substrate 10, the excess adhesive penetrates into the gantry 40 made of a porous material by capillary action. Similarly, when the front surface of the gantry 40 and the back surface of the LED element 30 are bonded, as shown by an arrow D in FIG. 2B, a part of the adhesive contributes to the bonding, and the extra adhesive is porous. It penetrates into the gantry 40 made of a quality material by capillary action. As the adhesive that bonds the back surface of the gantry 40 and the surface of the mounting substrate 10, an adhesive having desired characteristics is adopted. For example, the adhesive that bonds the back surface of the gantry 40 and the surface of the mounting substrate 10 is a silicone resin.

架台40を形成する多孔質材料は、多数のセラミック粒子又は金属粒子の集合体であり、多数のセラミック粒子又は金属粒子の間に微小の空孔が多数形成された多孔質体である。多孔質材料の空孔は、外気と通じた空孔である開気孔と、内部に閉じ込められた空孔である閉気孔の2つの空孔に分類される。架台40を形成する多孔質材料は、外気と通じた空孔である開気孔が、架台40の接着に使用される接着剤の余分な接着剤を浸透可能であるか否かにより決定される。すなわち、架台40を形成する多孔質材料の開気孔の容積が、少なくともLED素子の接着に使用される接着剤の体積と架台40の接着に使用される接着剤の体積の合計の体積よりも大きくなればよい。   The porous material forming the gantry 40 is an aggregate of a large number of ceramic particles or metal particles, and is a porous body in which a large number of minute pores are formed between the numerous ceramic particles or metal particles. The pores of the porous material are classified into two pores, that is, open pores that are pores communicating with the outside air and closed pores that are pores confined inside. The porous material forming the gantry 40 is determined by whether or not the open pores, which are holes communicating with the outside air, can permeate the extra adhesive used for bonding the gantry 40. That is, the volume of the open pores of the porous material forming the gantry 40 is larger than the total volume of at least the volume of the adhesive used for bonding the LED elements and the volume of the adhesive used for bonding the gantry 40. It only has to be.

樹脂枠50は、回路基板20の開口部の大きさに合わせて例えば白色の樹脂で構成された円形の枠体であり、回路基板20の表面で、開口部21を縁取るように形成された配線パターン23に重なる位置に固定される。樹脂枠50は、封止樹脂60の流出しを防止するためのダム材であり、また、LED素子30から側方に出射された光を、LED素子30の表面方向である発光装置1の上方に向けて反射させる反射材としても機能する。   The resin frame 50 is a circular frame made of, for example, white resin in accordance with the size of the opening of the circuit board 20, and is formed so as to border the opening 21 on the surface of the circuit board 20. It is fixed at a position overlapping the wiring pattern 23. The resin frame 50 is a dam material for preventing the sealing resin 60 from flowing out, and the light emitted from the LED element 30 to the side is above the light emitting device 1 which is the surface direction of the LED element 30. It also functions as a reflector that reflects toward the surface.

封止樹脂60は、開口部21内に注入されて、複数の架台40、複数のLED素子30及びボンディングワイヤ31を一体に被覆して、保護し且つ封止する。例えば、封止樹脂60としては、エポキシ樹脂又はシリコーン樹脂などの無色かつ透明な樹脂を、特に耐熱性がある樹脂を使用することが好ましい。封止樹脂60は、図1(A)に示した例では樹脂枠50により実装基板10上に円板状に形成される。   The sealing resin 60 is injected into the opening 21 to cover and protect and seal the plurality of mounts 40, the plurality of LED elements 30, and the bonding wires 31 integrally. For example, as the sealing resin 60, it is preferable to use a colorless and transparent resin such as an epoxy resin or a silicone resin, and particularly a heat resistant resin. In the example shown in FIG. 1A, the sealing resin 60 is formed in a disk shape on the mounting substrate 10 by the resin frame 50.

また、封止樹脂60には、例えば緑色蛍光体及び赤色蛍光体などの蛍光体が分散混入される。発光装置1は、青色LEDであるLED素子30からの青色光と、それによって緑色蛍光体及び赤色蛍光体を励起させて得られる緑色光及び赤色光とを混合させることで得られる白色光を出射する。緑色蛍光体は、LED素子30が出射した青色光を吸収して緑色光に波長変換する、例えば(BaSr)SiO:Eu2+などの粒子状の蛍光体材料である。赤色蛍光体は、LED素子30が出射した青色光を吸収して赤色光に波長変換する、例えばCaAlSiN:Eu2+などの粒子状の蛍光体材料である。なお、封止樹脂60に混入される蛍光体の組合せは緑色蛍光体と赤色蛍光体に限らず、例えばYAG(yttrium aluminum garnet)などの黄色蛍光体をさらに混入させてもよいし、黄色蛍光体と赤色蛍光体などの上記とは異なる組合せを用いてもよい。あるいは、発光装置1の用途によっては、封止樹脂60は1種類のみの蛍光体を含有してもよい。 The sealing resin 60 is mixed with phosphors such as a green phosphor and a red phosphor. The light emitting device 1 emits white light obtained by mixing blue light from the LED element 30 which is a blue LED and green light and red light obtained by exciting the green phosphor and the red phosphor thereby. To do. The green phosphor is a particulate phosphor material such as (BaSr) 2 SiO 4 : Eu 2+ that absorbs blue light emitted from the LED element 30 and converts the wavelength into green light. The red phosphor is a particulate phosphor material such as CaAlSiN 3 : Eu 2+ that absorbs blue light emitted from the LED element 30 and converts the wavelength into red light. The combination of the phosphors mixed in the sealing resin 60 is not limited to the green phosphor and the red phosphor. For example, a yellow phosphor such as YAG (yttrium aluminum garnet) may be further mixed, or the yellow phosphor A combination different from the above, such as red phosphor and the like, may be used. Or depending on the use of the light-emitting device 1, the sealing resin 60 may contain only one type of phosphor.

(第1実施形態に係る発光装置の製造工程)
図3〜9は、発光装置1の製造工程を示す図である。図3は第1工程の斜視図であり、図4(A)は第1工程に続く第2工程の斜視図であり、図5(A)は第2工程に続く第3工程の斜視図であり、図6(A)は第3工程に続く第4工程の斜視図である。図7(A)は第4工程に続く第5工程の斜視図であり、図8(A)は第5工程に続く第6工程の斜視図であり、図9(A)は第6工程に続く第7工程の斜視図であり、図10(A)は第7工程に続く第8工程の斜視図である。図4(B)は図4(A)のIIA-IIB線に沿った断面であり、図5(B)は図5(A)のIIIA-IIIB線に沿った断面であり、図6(B)は図6(A)のIVA-IVB線に沿った断面である。図7(B)は図7(A)のVA-VB線に沿った断面であり、図8(B)は図8(A)のVIA-VIB線に沿った断面であり、図9(B)は図9(A)のVIIA-VIIB線に沿った断面である。図4(C)は、LED素子30及び架台40が接着された状態を示す図である。
(Manufacturing process of the light emitting device according to the first embodiment)
3 to 9 are diagrams showing manufacturing steps of the light emitting device 1. 3 is a perspective view of the first step, FIG. 4 (A) is a perspective view of the second step following the first step, and FIG. 5 (A) is a perspective view of the third step following the second step. FIG. 6A is a perspective view of the fourth step following the third step. FIG. 7A is a perspective view of the fifth step following the fourth step, FIG. 8A is a perspective view of the sixth step following the fifth step, and FIG. 9A is the sixth step. FIG. 10A is a perspective view of a subsequent seventh step, and FIG. 10A is a perspective view of an eighth step following the seventh step. 4B is a cross section taken along line IIA-IIB in FIG. 4A, and FIG. 5B is a cross section taken along line IIIA-IIIB in FIG. ) Is a cross section taken along line IVA-IVB in FIG. 7B is a cross section taken along line VA-VB in FIG. 7A, and FIG. 8B is a cross section taken along line VIA-VIB in FIG. 8A. ) Is a cross section taken along line VIIA-VIIB in FIG. FIG. 4C is a diagram illustrating a state where the LED element 30 and the mount 40 are bonded.

発光装置1の製造時には、まず、図3に示すように、複数のLED素子30が形成されたウェハー300と、多孔質材料400とが不図示の接着剤により接着される。ウェハー300と多孔質材料400とが接着されるとき、接着剤の一部は接着に寄与し、余分な接着剤は多孔質材料400の内部に浸透する。次いで、図4(A)及び4(B)に示すように、接着されたウェハー300及び多孔質材料400をLED素子30のそれぞれの形成領域毎にダイシングして、図4(C)に示すように、LED素子30及び架台40を接着された状態で切り出す。   When manufacturing the light emitting device 1, first, as shown in FIG. 3, the wafer 300 on which the plurality of LED elements 30 are formed and the porous material 400 are bonded together with an adhesive (not shown). When the wafer 300 and the porous material 400 are bonded, a part of the adhesive contributes to the bonding, and the excess adhesive penetrates into the porous material 400. Next, as shown in FIGS. 4 (A) and 4 (B), the bonded wafer 300 and porous material 400 are diced for each formation region of the LED element 30, and as shown in FIG. 4 (C). Then, the LED element 30 and the gantry 40 are cut out in a bonded state.

次いで、図5(A)及び5(B)に示すように、実装基板10と、開口部21を有する回路基板20とが、重ね合わされて貼り合わされる。次いで、図6(A)及び6(B)に示すように、回路基板20の開口部21から露出している実装基板10の実装領域11のLED素子30を実装する領域に接着剤70が配置される。次いで、図7(A)及び7(B)に示すように、回路基板20の開口部21から露出している実装基板10の実装領域11に配置された接着剤に、架台40にそれぞれ搭載された複数のLED素子30が押圧されて接着される。実装基板10と架台40にそれぞれ搭載された複数のLED素子30とが接着剤70によって接着されるとき、接着剤70の一部は接着に寄与し、余分な接着剤は架台40の内部に浸透する。   Next, as shown in FIGS. 5A and 5B, the mounting substrate 10 and the circuit substrate 20 having the opening 21 are overlapped and bonded together. Next, as shown in FIGS. 6A and 6B, an adhesive 70 is disposed in a region where the LED element 30 is mounted in the mounting region 11 of the mounting substrate 10 exposed from the opening 21 of the circuit substrate 20. Is done. Next, as shown in FIGS. 7A and 7B, each is mounted on the gantry 40 with the adhesive disposed in the mounting region 11 of the mounting substrate 10 exposed from the opening 21 of the circuit substrate 20. The plurality of LED elements 30 are pressed and bonded. When the mounting substrate 10 and the plurality of LED elements 30 respectively mounted on the mount 40 are bonded by the adhesive 70, a part of the adhesive 70 contributes to the bonding, and the excess adhesive penetrates into the mount 40. To do.

次いで、図8(A)及び8(B)に示すように、近接するLED素子30同士がボンディングワイヤ31で互いに電気的に接続され、開口部21の外周側のLED素子30から出たボンディングワイヤ31は、回路基板20の配線パターン23に接続される。一例では、ボンディングワイヤ31は、超音波溶着によりLED素子30に接続される。次いで、図9(A)及び9(B)に示すように、回路基板20の配線パターン23の上に樹脂枠50が固定される。そして、開口部21内に、蛍光体を含むシリコーン樹脂などが充填されて、封止樹脂60を形成する。以上の工程により、図1(A)及び1(B)に示す発光装置1が完成する。   Next, as shown in FIGS. 8A and 8B, the adjacent LED elements 30 are electrically connected to each other by the bonding wire 31, and the bonding wire that has come out of the LED element 30 on the outer peripheral side of the opening 21. 31 is connected to the wiring pattern 23 of the circuit board 20. In one example, the bonding wire 31 is connected to the LED element 30 by ultrasonic welding. Next, as shown in FIGS. 9A and 9B, the resin frame 50 is fixed on the wiring pattern 23 of the circuit board 20. Then, the opening portion 21 is filled with a silicone resin containing a phosphor or the like to form the sealing resin 60. Through the above steps, the light-emitting device 1 illustrated in FIGS. 1A and 1B is completed.

(第1実施形態に係る発光装置の作用効果)
発光装置1では、複数の発光素子であるLED素子30のそれぞれが、熱伝導率が高い多孔質材料で形成された架台40を介して実装基板10の実装領域11に実装される。LED素子30及び架台40を実装領域11に実装するときに配置された接着剤70が架台40の裏面と実装領域11の界面に位置して架台40と実装領域11との接着に寄与する。また、余分な接着剤は、架台40が実装基板10の表面に押圧されるときに、架台40の内部に浸透する。余分な接着剤が架台40の内部に浸透することにより、熱導電率が比較的低い接着剤は、最小限の厚さで架台40の裏面と実装領域11の表面との界面に位置することになる。同様に、LED素子30の裏面と架台40の表面との界面に位置する接着剤は最小限の厚さになる。実装領域11及びLED素子30と架台40との界面に位置する接着剤の厚さが最小限の厚さになることにより、発光装置1は、接着剤による熱伝導率の低下を最小限に抑え、LED素子30からの放熱効率を向上させることができる。なお、LED素子30及び架台40は、封止樹脂60で封止されるので、実装領域11及びLED素子30と架台40との間の接着強度は、封止樹脂60で封止された発光装置1の信頼性には影響を与えない。実装領域11及びLED素子30と架台40との間の接着強度は、LED素子30にボンディングワイヤ31が超音波溶着により接続可能な強度であればよい。
(Operational effect of the light emitting device according to the first embodiment)
In the light emitting device 1, each of the LED elements 30 as a plurality of light emitting elements is mounted on the mounting region 11 of the mounting substrate 10 via the mount 40 formed of a porous material having a high thermal conductivity. The adhesive 70 disposed when mounting the LED element 30 and the gantry 40 on the mounting area 11 is located at the interface between the back surface of the gantry 40 and the mounting area 11 and contributes to adhesion between the gantry 40 and the mounting area 11. Further, the excess adhesive penetrates into the gantry 40 when the gantry 40 is pressed against the surface of the mounting substrate 10. The adhesive having a relatively low thermal conductivity is positioned at the interface between the back surface of the gantry 40 and the surface of the mounting region 11 with a minimum thickness because the extra adhesive penetrates into the gantry 40. Become. Similarly, the adhesive located at the interface between the back surface of the LED element 30 and the surface of the mount 40 has a minimum thickness. Since the thickness of the adhesive located at the interface between the mounting region 11 and the LED element 30 and the gantry 40 is minimized, the light emitting device 1 minimizes the decrease in thermal conductivity due to the adhesive. The heat dissipation efficiency from the LED element 30 can be improved. Since the LED element 30 and the gantry 40 are sealed with the sealing resin 60, the bonding strength between the mounting region 11 and the LED element 30 and the gantry 40 is the light emitting device sealed with the sealing resin 60. The reliability of 1 is not affected. The bonding strength between the mounting region 11 and the LED element 30 and the gantry 40 may be any strength that allows the bonding wire 31 to be connected to the LED element 30 by ultrasonic welding.

図10(A)は第1比較例に係る発光装置の部分断面図であり、図10(B)は第2比較例に係る発光装置の部分断面図であり、図10(C)は発光装置1の部分断面図である。   10A is a partial cross-sectional view of the light emitting device according to the first comparative example, FIG. 10B is a partial cross sectional view of the light emitting device according to the second comparative example, and FIG. 10C is the light emitting device. FIG.

第1比較例に係る発光装置101では、LED素子30は、実装基板10に接着剤80を介して実装される。接着剤80は、シリコーン樹脂からなり、熱伝導率は0.2(W/m*K)程度である。第2比較例に係る発光装置102では、LED素子30は、実装基板10に金属粒子82を含有する接着剤81を介して実装される。接着剤81は、金属粒子82を含有することにより接着剤よりも高い熱伝導率を有し、一例では熱伝導率は1(W/m*K)程度である。第1実施形態に係る発光装置1では、LED素子30は、実装基板10に表面及び裏面に最小限の厚さの接着剤が位置する架台40を介して実装され、実装基板10とLED素子30との間の熱伝導率は、10(W/m*K)以上にすることができる。第1実施形態に係る発光装置1の実装基板10とLED素子30との間の熱伝導率は、シリコーン樹脂を含む接着剤80で実装基板10とLED素子30とが接着される第1比較例に係る発光装置101のよりも2桁以上高くすることできる。また、第1実施形態に係る発光装置1の実装基板10とLED素子30との間の熱伝導率は、金属粒子82を含有する接着剤81で実装基板10とLED素子30とが接着される第2比較例に係る発光装置102のよりも1桁以上高くすることできる。   In the light emitting device 101 according to the first comparative example, the LED element 30 is mounted on the mounting substrate 10 via the adhesive 80. The adhesive 80 is made of a silicone resin and has a thermal conductivity of about 0.2 (W / m * K). In the light emitting device 102 according to the second comparative example, the LED element 30 is mounted on the mounting substrate 10 via an adhesive 81 containing metal particles 82. The adhesive 81 has a higher thermal conductivity than the adhesive by containing the metal particles 82, and in one example, the thermal conductivity is about 1 (W / m * K). In the light emitting device 1 according to the first embodiment, the LED element 30 is mounted on the mounting substrate 10 via the mount 40 on which the adhesive with the minimum thickness is located on the front surface and the back surface, and the mounting substrate 10 and the LED element 30 are mounted. The thermal conductivity between and can be 10 (W / m * K) or more. The thermal conductivity between the mounting substrate 10 and the LED element 30 of the light emitting device 1 according to the first embodiment is a first comparative example in which the mounting substrate 10 and the LED element 30 are bonded with an adhesive 80 containing a silicone resin. The light emitting device 101 according to the present invention can be higher by two digits or more. The thermal conductivity between the mounting substrate 10 and the LED element 30 of the light emitting device 1 according to the first embodiment is such that the mounting substrate 10 and the LED element 30 are bonded with an adhesive 81 containing metal particles 82. It can be made one digit higher than that of the light emitting device 102 according to the second comparative example.

また、発光装置1では、余分な接着剤を架台40に浸透させることにより、実装領域11及びLED素子30と架台40との界面に位置する接着剤の厚さを最小限にする。発光装置1では、実装領域11及びLED素子30と架台40との界面に位置する接着剤の厚さを最小限にすることより、実装領域11とLED素子30との間の距離を架台40の高さと略同一にすることができる。発光装置1では、実装領域11とLED素子30との間の距離を架台40の高さと略同一にすることにより、実装領域11とLED素子30との間の距離を均一にすることができる。   Further, in the light emitting device 1, the thickness of the adhesive located at the interface between the mounting region 11 and the LED element 30 and the gantry 40 is minimized by causing the extra adhesive to permeate the gantry 40. In the light emitting device 1, the distance between the mounting region 11 and the LED element 30 can be reduced by reducing the thickness of the adhesive located at the interface between the mounting region 11 and the LED element 30 and the gantry 40. It can be approximately the same as the height. In the light emitting device 1, the distance between the mounting region 11 and the LED element 30 can be made uniform by making the distance between the mounting region 11 and the LED element 30 substantially the same as the height of the mount 40.

図11(A)〜11(C)は第1比較例に係る発光装置101におけるLED素子30の実装状態を示す図であり、図11(D)〜11(F)は第1実施形態に係る発光装置1におけるLED素子30の実装状態を示す図である。図11(A)及び11(D)は第1状態であり、図11(B)及び11(E)は第1状態に続く第2状態であり、図11(C)及び11(F)は第2状態に続く第3状態である。   11 (A) to 11 (C) are views showing the mounted state of the LED element 30 in the light emitting device 101 according to the first comparative example, and FIGS. 11 (D) to 11 (F) are related to the first embodiment. FIG. 3 is a diagram showing a mounting state of LED elements 30 in the light emitting device 1. 11 (A) and 11 (D) are the first state, FIGS. 11 (B) and 11 (E) are the second state following the first state, and FIGS. 11 (C) and 11 (F) are This is a third state following the second state.

第1比較例に係る発光装置101では、図11(A)に示すように、LED素子30は、実装基板10の表面に配置された接着剤80に押圧された後に、図11(B)に示すように、接着剤80を介して実装基板10に接着される。LED素子30は、接着剤80が硬化するまでの間、自重により徐々に降下して、図11(C)に示すように、接着剤80を介して実装基板10に実装される。実装時の実装基板10とLED素子30との間の距離は、押圧時の圧力及び周囲の温度等の実装条件に応じて相違するため、実装時の実装基板10とLED素子30との間の距離を均一にすることは容易ではない。   In the light emitting device 101 according to the first comparative example, as shown in FIG. 11A, the LED element 30 is pressed by the adhesive 80 disposed on the surface of the mounting substrate 10, and then in FIG. As shown, it is bonded to the mounting substrate 10 via an adhesive 80. The LED element 30 is gradually lowered by its own weight until the adhesive 80 is cured, and is mounted on the mounting substrate 10 via the adhesive 80 as shown in FIG. Since the distance between the mounting substrate 10 and the LED element 30 at the time of mounting differs depending on mounting conditions such as the pressure at the time of pressing and the ambient temperature, the distance between the mounting substrate 10 and the LED element 30 at the time of mounting is different. It is not easy to make the distance uniform.

一方、第1実施形態に係る発光装置1では、図3及び11(D)に示すように、LED素子30と架台40とが接着剤71を介して接着された後に、図7及び11(D)に示すように、実装基板10の表面に配置された接着剤70に押圧される。これにより、図11(E)に示すように、LED素子30は、架台40並びに接着剤70及び71を介して実装基板10に接着される。接着剤70及び71は、硬化するまでの間、温度が上昇して粘度が低下してくると架台40の内部に徐々に浸透して、図11(F)に示すように、実装時の実装基板10とLED素子30との間の距離は、架台40の高さと略同一になる。   On the other hand, in the light emitting device 1 according to the first embodiment, as shown in FIGS. 3 and 11 (D), after the LED element 30 and the mount 40 are bonded via an adhesive 71, FIGS. ), The adhesive 70 disposed on the surface of the mounting substrate 10 is pressed. As a result, the LED element 30 is bonded to the mounting substrate 10 via the mount 40 and the adhesives 70 and 71 as shown in FIG. The adhesives 70 and 71 gradually penetrate into the gantry 40 when the temperature rises and the viscosity decreases until the adhesives 70 and 71 are cured. As shown in FIG. The distance between the substrate 10 and the LED element 30 is substantially the same as the height of the gantry 40.

(第2実施形態に係る発光装置)
図12(A)は完成品としての第2実施形態に係る発光装置の斜視図であり、図1(B)は図12(A)のVIIIA-VIIIB線に沿った断面図である。
(Light Emitting Device According to Second Embodiment)
FIG. 12A is a perspective view of the light emitting device according to the second embodiment as a finished product, and FIG. 1B is a cross-sectional view taken along the line VIIIA-VIIIB of FIG.

発光装置2は、架台40の代わりに架台41が配置されることが発光装置1と相違する。架台41以外の発光装置2の構成は、同一符号が付された発光装置1の構成と同様の構成及び機能を有するので、ここでは詳細な説明は省略する。   The light emitting device 2 is different from the light emitting device 1 in that a gantry 41 is arranged instead of the gantry 40. Since the configuration of the light-emitting device 2 other than the gantry 41 has the same configuration and function as the configuration of the light-emitting device 1 with the same reference numerals, detailed description thereof is omitted here.

架台41は、開口部21と略同一径の円形の形状を有する多孔質材料で形成された部材である。架台41は、架台41と同様に熱伝導率は比較的高い多孔質セラミック又は多孔質金属により形成される。架台41には、複数のLED素子30が搭載される。図12(A)及び12(B)に示す例では、架台41には、21個のLED素子30の全てが搭載される。   The gantry 41 is a member formed of a porous material having a circular shape having substantially the same diameter as the opening 21. The gantry 41 is formed of a porous ceramic or a porous metal having a relatively high thermal conductivity like the gantry 41. A plurality of LED elements 30 are mounted on the gantry 41. In the example shown in FIGS. 12A and 12B, all 21 LED elements 30 are mounted on the gantry 41.

発光装置2の製造工程は、図3に示す工程に対応する工程がないこと、及び図5に示す工程と図6に示す工程との間に架台41を実装基板10の実装領域11に接着する工程を有することが発光装置1の製造工程と相違する。また、発光装置2の製造工程は、図4に示す工程において、ウェハー300のみがダイシングされることが発光装置1の製造工程と相違する。また、発光装置2の製造工程は、図6に示す工程において、接着剤70は、実装領域11ではなく実装領域11に接着された架台41に配置されることが発光装置1の製造工程と相違する。さらに、発光装置2の製造工程は、図7に示す工程において、LED素子のみが押圧されて実装されることが発光装置1の製造工程と相違する。   In the manufacturing process of the light emitting device 2, there is no process corresponding to the process shown in FIG. 3, and the gantry 41 is bonded to the mounting region 11 of the mounting substrate 10 between the process shown in FIG. 5 and the process shown in FIG. Having the process is different from the manufacturing process of the light emitting device 1. The manufacturing process of the light emitting device 2 is different from the manufacturing process of the light emitting device 1 in that only the wafer 300 is diced in the process shown in FIG. Further, the manufacturing process of the light emitting device 2 is different from the manufacturing process of the light emitting device 1 in that the adhesive 70 is arranged not on the mounting area 11 but on the mount 41 bonded to the mounting area 11 in the process shown in FIG. To do. Further, the manufacturing process of the light emitting device 2 is different from the manufacturing process of the light emitting device 1 in that only the LED element is pressed and mounted in the process shown in FIG.

発光装置2では、架台41の体積は、発光装置1で使用される複数の架台40の合計の体積よりも大きい。架台41の体積が大きいので、実装基板と架台41とを接着する接着剤及びLED素子30と架台41とを接着する接着剤が架台41の内部に浸透し切れずに架台41の表面又は裏面に厚い接着層が形成されるおそれは低い。   In the light emitting device 2, the volume of the gantry 41 is larger than the total volume of the plurality of gantry 40 used in the light emitting device 1. Since the volume of the gantry 41 is large, an adhesive that bonds the mounting substrate and the gantry 41 and an adhesive that bonds the LED element 30 and the gantry 41 do not completely penetrate into the gantry 41 and do not penetrate into the surface or the back surface of the gantry 41. The risk of forming a thick adhesive layer is low.

(第3実施形態に係る発光装置)
図13(A)は完成品としての第2実施形態に係る発光装置の斜視図であり、図1(B)は図13(A)のIXA-IXB線に沿った断面図である。
(Light Emitting Device According to Third Embodiment)
FIG. 13A is a perspective view of a light emitting device according to a second embodiment as a finished product, and FIG. 1B is a cross-sectional view taken along the line IXA-IXB in FIG.

発光装置3は、架台41の表面に反射メッキ層42が形成されることが発光装置2と相違する。反射メッキ層42以外の発光装置3の構成は、同一符号が付された発光装置2の構成と同様の構成及び機能を有するので、ここでは詳細な説明は省略する。   The light emitting device 3 is different from the light emitting device 2 in that a reflective plating layer 42 is formed on the surface of the gantry 41. Since the configuration of the light emitting device 3 other than the reflective plating layer 42 has the same configuration and function as the configuration of the light emitting device 2 denoted by the same reference numerals, detailed description thereof is omitted here.

反射メッキ層42は、銀メッキにより形成される。反射メッキ層42は、架台41の表面のLED素子30が実装される領域以外の領域に形成される。   The reflective plating layer 42 is formed by silver plating. The reflective plating layer 42 is formed in a region other than the region where the LED element 30 is mounted on the surface of the gantry 41.

発光装置3の製造工程は、架台41の表面に反射メッキ層42を形成する工程を有することが発光装置2の製造工程と相違する。反射メッキ層42は、LED素子30が実装される領域を遮蔽する不図示のマスクを架台41の表面に配置した状態で、架台41の表面を銀メッキ処理することにより形成される。   The manufacturing process of the light emitting device 3 is different from the manufacturing process of the light emitting device 2 in that it includes a step of forming the reflective plating layer 42 on the surface of the gantry 41. The reflective plating layer 42 is formed by silver-plating the surface of the gantry 41 in a state where a mask (not shown) that shields a region where the LED element 30 is mounted is disposed on the surface of the gantry 41.

発光装置3では、反射率が比較的小さい多孔質材料で形成された架台41の表面を金属メッキすることにより、LED素子30の側面又は裏面から放射される光の反射率を発光装置2よりも大きくすることができる。   In the light emitting device 3, the reflectance of light emitted from the side surface or the back surface of the LED element 30 is made higher than that of the light emitting device 2 by metal plating the surface of the gantry 41 made of a porous material having a relatively low reflectance. Can be bigger.

1、2、3 発光装置
10 実装基板
11 実装領域
20 回路基板
30 LED素子
31 ボンディングワイヤ
40、41 架台
42 反射メッキ層
50 樹脂枠
60 封止樹脂
1, 2, 3 Light-emitting device 10 Mounting substrate 11 Mounting region 20 Circuit substrate 30 LED element 31 Bonding wire 40, 41 Mounting frame 42 Reflective plating layer 50 Resin frame 60 Sealing resin

Claims (7)

実装領域を有する実装基板と、
多孔質材料で形成され、前記実装領域の表面に裏面が接着された架台と、
前記架台の表面に裏面が接着された発光素子と、
前記発光素子の表面に形成された素子電極に接続されたボンディングワイヤと、
前記架台、前記発光素子及び前記ボンディングワイヤを封止する封止樹脂と、
を有することを特徴とする発光装置。
A mounting board having a mounting area;
A pedestal formed of a porous material and having a back surface adhered to the surface of the mounting region;
A light emitting device having a back surface adhered to the surface of the mount;
A bonding wire connected to an element electrode formed on the surface of the light emitting element;
A sealing resin for sealing the mount, the light emitting element, and the bonding wire;
A light emitting device comprising:
前記架台及び前記発光素子はそれぞれ複数配置され、
前記複数の架台のそれぞれは、前記複数の発光素子の何れか1つに対応するように配置される、請求項1に記載の発光装置。
A plurality of the gantry and the light emitting element are respectively disposed,
2. The light-emitting device according to claim 1, wherein each of the plurality of mounts is disposed to correspond to any one of the plurality of light-emitting elements.
前記架台には、前記発光素子が複数接着される、請求項1に記載の発光装置。   The light-emitting device according to claim 1, wherein a plurality of the light-emitting elements are bonded to the mount. 前記架台の表面に形成される反射層を更に有する、請求項3に記載の発光装置。   The light-emitting device according to claim 3, further comprising a reflective layer formed on a surface of the mount. 前記多孔質材料は、多孔質セラミックスである、請求項1〜4の何れか一項に記載の発光装置。   The light emitting device according to any one of claims 1 to 4, wherein the porous material is a porous ceramic. 前記実装基板は、一方の面に前記架台が配置された金属板を含む、請求項1〜5の何れか一項に記載の発光装置。   The light emitting device according to any one of claims 1 to 5, wherein the mounting substrate includes a metal plate on which one of the mounts is disposed. 多孔質材料で形成された架台の表面に発光素子の裏面を接着し、
実装基板の実装領域の表面に前記架台の裏面を接着し、
前記発光素子の表面に形成された素子電極にボンディングワイヤを接続し、
前記架台、前記発光素子及び前記ボンディングワイヤを封止する封止樹脂を充填する、
ことを含むことを特徴とする発光装置を製造する製造方法。
Adhering the back surface of the light emitting element to the surface of the gantry made of porous material,
Glue the back of the mount to the surface of the mounting area of the mounting board,
A bonding wire is connected to the device electrode formed on the surface of the light emitting device,
Filling with a sealing resin for sealing the mount, the light emitting element and the bonding wire,
The manufacturing method which manufactures the light-emitting device characterized by the above-mentioned.
JP2015160170A 2015-08-14 2015-08-14 Light emitting device and manufacturing method thereof Pending JP2017038031A (en)

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JP2007180059A (en) * 2005-12-26 2007-07-12 Toshiba Corp Optical semiconductor device and manufacturing method thereof
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JP2008293753A (en) * 2007-05-23 2008-12-04 Sharp Corp Lighting device
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