JP2016111141A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- JP2016111141A JP2016111141A JP2014246080A JP2014246080A JP2016111141A JP 2016111141 A JP2016111141 A JP 2016111141A JP 2014246080 A JP2014246080 A JP 2014246080A JP 2014246080 A JP2014246080 A JP 2014246080A JP 2016111141 A JP2016111141 A JP 2016111141A
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Abstract
Description
本発明は、半導体素子を封止したモジュールと、当該半導体素子を冷却する冷却器とを備えた、半導体装置に関する。 The present invention relates to a semiconductor device including a module in which a semiconductor element is sealed and a cooler that cools the semiconductor element.
例えば、特許文献１に半導体装置が記載されている（図５）。この特許文献１に記載された半導体装置１００は、半導体素子（パワー素子１１０）に、放熱部材（ヒートスプレッダー１３０）、絶縁樹脂シート（絶縁シート１４０）、および冷却器（放熱フィン１５０）が、順に接合された構造をしている。半導体素子、放熱部材、および絶縁樹脂シートは、樹脂１６０で封止されてモジュール化されている。 For example, Patent Document 1 describes a semiconductor device (FIG. 5). The semiconductor device 100 described in Patent Document 1 includes a semiconductor element (power element 110), a heat radiating member (heat spreader 130), an insulating resin sheet (insulating sheet 140), and a cooler (heat radiating fin 150) in this order. It has a joined structure. The semiconductor element, the heat radiating member, and the insulating resin sheet are sealed with a resin 160 and modularized.
上記特許文献１に記載された半導体装置の構造では、放熱部材と冷却器とに線膨張係数が異なる材料を用いることもある。しかし、放熱部材と冷却器とに線膨張係数が異なる材料を用いた場合、半導体装置に熱ストレスが加わった際に放熱部材と冷却器との間で線膨張に差が生じる。線膨張に差が生じると、特に放熱部材が絶縁樹脂シートと接合する境界部分、つまり絶縁樹脂シートの接合界面（図５における破線円の箇所）に高いせん断応力がかかる。このため、絶縁樹脂シートの剥離や破壊（クラックなど）が発生するおそれがある。 In the structure of the semiconductor device described in Patent Document 1, materials having different linear expansion coefficients may be used for the heat dissipation member and the cooler. However, when materials having different linear expansion coefficients are used for the heat dissipation member and the cooler, a difference in linear expansion occurs between the heat dissipation member and the cooler when thermal stress is applied to the semiconductor device. When a difference in linear expansion occurs, high shear stress is applied particularly to a boundary portion where the heat dissipation member is bonded to the insulating resin sheet, that is, a bonding interface of the insulating resin sheet (a dotted circle in FIG. 5). For this reason, there exists a possibility that peeling and destruction (crack etc.) of an insulating resin sheet may generate | occur | produce.
本発明は、上記課題に鑑みて、絶縁樹脂シートの剥離や破壊（クラックなど）が発生するおそれを低減させた半導体装置を提供することを目的とする。 In view of the above-described problems, an object of the present invention is to provide a semiconductor device in which the possibility of peeling or breaking (such as cracking) of an insulating resin sheet is reduced.
上記課題を解決するために、本発明は、半導体素子の少なくとも１つの主面に、放熱部材、絶縁樹脂シート、および冷却器が順に接合された半導体装置であって、放熱部材は、絶縁樹脂シートに接合される第１部材と、半導体素子に接合される第２部材とを、貼り合わせたクラッド材で構成され、第１部材が、冷却器と同じ材料または冷却器と同等の線膨張係数を有する材料で形成されていることを特徴とする。 In order to solve the above problems, the present invention provides a semiconductor device in which a heat radiating member, an insulating resin sheet, and a cooler are sequentially joined to at least one main surface of a semiconductor element, and the heat radiating member is an insulating resin sheet. The first member joined to the semiconductor element and the second member joined to the semiconductor element are made of a clad material bonded together, and the first member has the same material as the cooler or a linear expansion coefficient equivalent to that of the cooler. It is formed with the material which has.
この本発明の半導体装置によれば、放熱部材を、第１部材板と第２部材とを貼り合わせたクラッド材で構成している。この放熱部材は、第１部材側が絶縁樹脂シートを介して冷却器に接合され、第２部材側が半導体素子に接合される。そして、この第１部材を、冷却器と同じ材料（例えばアルミニウム）または冷却器と同等の線膨張係数を有する材料で形成している。これにより、半導体装置に熱ストレスが加わったときにおける、放熱部材の第１部材と冷却器との間で線膨張の差を、ほぼなくせる。よって、絶縁樹脂シートの接合界面にかかるせん断応力を減少させることができる。従って、本発明に係る半導体装置は、絶縁樹脂シートの剥離や破壊（クラックなど）が発生するおそれを低減できる。 According to this semiconductor device of the present invention, the heat dissipating member is constituted by the clad material obtained by bonding the first member plate and the second member. As for this heat radiating member, the 1st member side is joined to a cooler via an insulating resin sheet, and the 2nd member side is joined to a semiconductor element. And this 1st member is formed with the material (for example, aluminum) same as a cooler, or the material which has a linear expansion coefficient equivalent to a cooler. Thereby, the difference in linear expansion between the first member of the heat dissipation member and the cooler when thermal stress is applied to the semiconductor device can be almost eliminated. Therefore, the shear stress applied to the bonding interface of the insulating resin sheet can be reduced. Therefore, the semiconductor device according to the present invention can reduce the possibility that the insulating resin sheet is peeled or broken (such as cracks).
以上述べたように、本発明の半導体装置によれば、絶縁樹脂シートの剥離や破壊（クラックなど）が発生するおそれを低減できる。 As described above, according to the semiconductor device of the present invention, it is possible to reduce the possibility that the insulating resin sheet is peeled off or broken (such as cracks).
以下、図面を参照しながら、本発明に係る半導体装置の実施形態について詳細に説明する。 Hereinafter, embodiments of a semiconductor device according to the present invention will be described in detail with reference to the drawings.
本発明に係る半導体装置は、放熱部材の冷却器と対向する表面の線膨張係数と冷却器の放熱部材と対向する表面の線膨張係数とを、同一または同等に設定する。例えば、放熱部材を、第１部材と第２部材とを貼り合わせたクラッド材で構成し、第１部材を、冷却器と同じ材料または冷却器と同等の線膨張係数を有する材料で形成する。そして、放熱部材の第２部材側に半導体素子を接合し、放熱部材の第１部材側に絶縁樹脂シートを挟んで冷却器を接合する。これにより、半導体装置に熱ストレスが加わったときにおける、放熱部材の第１部材と冷却器との間で線膨張の差を、ほぼなくせる。よって、絶縁樹脂シートの接合界面にかかるせん断応力を減少させることができる。従って、本発明に係る半導体装置は、絶縁樹脂シートの剥離や破壊（クラックなど）が発生するおそれを低減できる。 In the semiconductor device according to the present invention, the linear expansion coefficient of the surface of the heat radiating member facing the cooler and the linear expansion coefficient of the surface of the cooler facing the heat radiating member are set to be the same or equivalent. For example, the heat radiating member is made of a clad material obtained by bonding a first member and a second member, and the first member is made of the same material as the cooler or a material having a linear expansion coefficient equivalent to that of the cooler. And a semiconductor element is joined to the 2nd member side of a heat radiating member, and a cooler is joined on both sides of an insulating resin sheet on the 1st member side of a radiating member. Thereby, the difference in linear expansion between the first member of the heat dissipation member and the cooler when thermal stress is applied to the semiconductor device can be almost eliminated. Therefore, the shear stress applied to the bonding interface of the insulating resin sheet can be reduced. Therefore, the semiconductor device according to the present invention can reduce the possibility that the insulating resin sheet is peeled or broken (such as cracks).
図１（ａ）は、本発明の一実施形態に係る半導体装置１の全体構造の断面を示す概略図である。図１（ｂ）は、図１（ａ）に示した半導体装置１における破線円の箇所を拡大表示した概略図である。図１では、複数の半導体素子を用いた、例えばインバータ回路を搭載した半導体装置であって、半導体素子を封止したモールドパッケージの両側の２箇所に放熱機構（放熱部材、絶縁樹脂シート、冷却器）を有した構成を例示している。 FIG. 1A is a schematic view showing a cross section of the entire structure of a semiconductor device 1 according to an embodiment of the present invention. FIG. 1B is a schematic view in which a broken-line circle portion in the semiconductor device 1 shown in FIG. In FIG. 1, a semiconductor device using a plurality of semiconductor elements, for example, equipped with an inverter circuit, has a heat dissipation mechanism (heat dissipation member, insulating resin sheet, cooler) at two locations on both sides of the mold package in which the semiconductor elements are sealed. ).
なお、図１に示した半導体装置１の構造は一例である。よって、モールドパッケージで封止される半導体素子は１つであってもよいし、モールドパッケージが有する放熱機構も半導体素子１０の少なくとも一方の主面側にだけ備えられていてもよい。 The structure of the semiconductor device 1 shown in FIG. 1 is an example. Therefore, the number of semiconductor elements sealed by the mold package may be one, and the heat dissipation mechanism of the mold package may be provided only on at least one main surface side of the semiconductor element 10.
［半導体装置の全体構造］
本実施形態に係る半導体装置１は、複数の半導体素子１０、複数の放熱板１３、複数の絶縁樹脂シート１４、および複数の冷却器１５を備えている。この半導体装置１の構成要素のうち、複数の半導体素子１０および複数の放熱板１３は、例えばエポキシ樹脂などの材料からなる樹脂部材１６によって封止されて、モールドパッケージ化されている。
[Overall structure of semiconductor device]
The semiconductor device 1 according to the present embodiment includes a plurality of semiconductor elements 10, a plurality of heat sinks 13, a plurality of insulating resin sheets 14, and a plurality of coolers 15. Among the constituent elements of the semiconductor device 1, the plurality of semiconductor elements 10 and the plurality of heat dissipation plates 13 are sealed by a resin member 16 made of a material such as an epoxy resin and are molded into a mold package.
各半導体素子１０は、例えばパワートランジスタなどの、動作時に発熱する発熱性を持った電力用半導体素子である。半導体素子１０は、２つの主面を有する略四角平板の形状をしている。各半導体素子１０の各主面は、例えば半田などの接合部材やスペーサ部材などを介して、複数の放熱板１３とそれぞれ接合されている。この半導体素子１０は、例えば図示しないリード端子などを介して外部の回路基板と電気的に接続されている。 Each semiconductor element 10 is a power semiconductor element having a heat generating property that generates heat during operation, such as a power transistor. The semiconductor element 10 has a substantially rectangular flat plate shape having two main surfaces. Each main surface of each semiconductor element 10 is joined to a plurality of heat sinks 13 via a joining member such as solder, a spacer member, or the like, for example. The semiconductor element 10 is electrically connected to an external circuit board via, for example, a lead terminal (not shown).
各放熱板１３は、熱伝導性に優れた材料で構成される放熱部材である。この放熱板１３は、各半導体素子１０で発生した熱を冷却器１５に逃がす、いわゆるヒートスプレッダーとしての役割を有する。本実施形態の放熱板１３は、２種類の金属板を貼り合わせたクラッド材である。このクラッド材の２種類の金属板のうち一方が、冷却器１５と同じ材料または冷却器１５と同等の線膨張係数を有する材料で形成される。図１で例示した放熱板１３は、冷却器１５と同じ材料からなる第１部材１３ａ（例えばアルミニウム（Ａｌ）の板）と、冷却器１５（第１部材）とは異なる材料からなる第２部材１３ｂ（例えば銅（Ｃｕ）の板）とを、貼り合わせた構成である。半導体素子１０は、放熱板１３の第２部材１３ｂ側に接合されている。放熱板１３の第１部材１３ａ側は、樹脂部材１６で覆われておらず、モールドパッケージの外部に露出している。 Each heat radiating plate 13 is a heat radiating member made of a material having excellent thermal conductivity. The heat radiating plate 13 serves as a so-called heat spreader that releases heat generated in each semiconductor element 10 to the cooler 15. The heat sink 13 of the present embodiment is a clad material in which two types of metal plates are bonded together. One of the two metal plates of the clad material is formed of the same material as the cooler 15 or a material having a linear expansion coefficient equivalent to that of the cooler 15. The heat sink 13 illustrated in FIG. 1 includes a first member 13a (for example, an aluminum (Al) plate) made of the same material as the cooler 15 and a second member made of a material different from the cooler 15 (first member). 13b (for example, a copper (Cu) plate) is pasted together. The semiconductor element 10 is bonded to the second member 13b side of the heat sink 13. The first member 13a side of the heat sink 13 is not covered with the resin member 16 and is exposed to the outside of the mold package.
絶縁樹脂シート１４は、例えば高い熱伝導性を有した熱硬化樹脂材料で構成され、放熱板１３の熱を冷却器１５に伝える役割を担う。加えて、絶縁樹脂シート１４は、放熱板１３と冷却器１５とを電気的に絶縁する役割をも担う。高い熱伝導性を有した樹脂としては、高熱伝導セラミックを含有したアルミナ（Ａｌ２Ｏ３）、窒化ホウ素（ＢＮ）、窒化アルミニウム（ＡｌＮ）などを内部に充填した樹脂などが挙げられる。絶縁樹脂シート１４は、垂直断面視において、放熱板１３の端部よりもパッケージ外周側に伸びている。この絶縁樹脂シート１４は、製造過程におけるヒータープレス処理にて、放熱板１３と冷却器１５との間に挿入された状態で加熱しながら圧力がかけられ、硬化することにより放熱板１３と冷却器１５とを接着させる。 The insulating resin sheet 14 is made of, for example, a thermosetting resin material having high thermal conductivity, and plays a role of transmitting the heat of the heat radiating plate 13 to the cooler 15. In addition, the insulating resin sheet 14 also plays a role of electrically insulating the heat radiating plate 13 and the cooler 15. Examples of the resin having high thermal conductivity include a resin filled with alumina (Al 2 O 3 ), boron nitride (BN), aluminum nitride (AlN), or the like containing a high thermal conductive ceramic. The insulating resin sheet 14 extends from the end of the heat radiating plate 13 to the package outer peripheral side in a vertical sectional view. The insulating resin sheet 14 is heated and heated in a state of being inserted between the heat sink 13 and the cooler 15 in a heater press process in the manufacturing process, and is cured to cure the heat sink 13 and the cooler. 15 is bonded.
冷却器１５は、熱伝導性に優れた材料で構成されるヒートシンクなどである。冷却器１５は、モールドパッケージの外部に露出している放熱板１３の第１部材１３ａ（アルミニウム板）に、絶縁樹脂シート１４を挟んで接合されている。すなわち、この冷却器１５は、放熱板１３の第１部材１３ａから絶縁樹脂シート１４を介して伝わる熱を、モールドパッケージの外部に放出させる役割を有する。本実施形態の冷却器１５は、放熱板１３の第１部材１３ａと同じ材料である、アルミニウムで形成されている。冷却器１５は、垂直断面視において、絶縁樹脂シート１４の端部より外側に伸びている。 The cooler 15 is a heat sink made of a material having excellent thermal conductivity. The cooler 15 is joined to the first member 13a (aluminum plate) of the heat radiating plate 13 exposed to the outside of the mold package with the insulating resin sheet 14 interposed therebetween. That is, the cooler 15 has a role of releasing heat transmitted from the first member 13a of the heat radiating plate 13 through the insulating resin sheet 14 to the outside of the mold package. The cooler 15 of the present embodiment is made of aluminum, which is the same material as the first member 13a of the heat sink 13. The cooler 15 extends outward from the end of the insulating resin sheet 14 in a vertical sectional view.
［半導体装置の作用および効果］
上述した本実施形態に係る半導体装置１の構成によれば、絶縁樹脂シート１４を挟んで向かい合う放熱板１３の第１部材１３ａと冷却器１５とが、同じアルミニウムで形成された部品となる。つまり、放熱板１３の第１部材１３ａと冷却器１５とが、同じ線膨張係数を有することとなる。このため、半導体装置１に熱ストレスが加わったとしても、放熱板１３の第１部材１３ａと冷却器１５との間で線膨張に差がほとんど生じない。よって、絶縁樹脂シート１４の接合界面にかかるせん断応力を減少させることができ、絶縁樹脂シート１４の剥離や破壊（クラックなど）が発生するおそれを低減させることができる。
[Operation and effect of semiconductor device]
According to the configuration of the semiconductor device 1 according to the present embodiment described above, the first member 13a of the heat sink 13 and the cooler 15 facing each other with the insulating resin sheet 14 interposed therebetween are components formed of the same aluminum. That is, the first member 13a of the heat radiating plate 13 and the cooler 15 have the same linear expansion coefficient. For this reason, even if thermal stress is applied to the semiconductor device 1, there is almost no difference in linear expansion between the first member 13 a of the heat sink 13 and the cooler 15. Therefore, the shear stress applied to the bonding interface of the insulating resin sheet 14 can be reduced, and the possibility that the insulating resin sheet 14 is peeled off or broken (such as cracks) can be reduced.
なお、発明者が行った実験では、上述した本実施形態に係る半導体装置１の構造において、絶縁樹脂シート１４の接合界面にかかるせん断応力を、従来と比べておおよそ７０％も低減できることが確認できた。図４を参照。 In the experiment conducted by the inventor, it was confirmed that the shear stress applied to the bonding interface of the insulating resin sheet 14 can be reduced by about 70% in the structure of the semiconductor device 1 according to the present embodiment described above. It was. See FIG.
［本発明に関わる参考例］
上記実施形態では、放熱板１３を、冷却器１５と同じ材料からなる第１部材１３ａ（アルミニウム板）と第２部材１３ｂ（銅板）とを貼り合わせたクラッド材で構成した。すなわち、放熱板１３の線膨張係数を冷却器１５の線膨張係数に合わせた。以下の参考例では、上述した実施形態の構成とは異なる構成であって、絶縁樹脂シート１４の剥離や破壊（クラックなど）が発生するおそれを低減させることができる構成を、図面を参照して説明する。
[Reference examples related to the present invention]
In the said embodiment, the heat sink 13 was comprised with the clad material which bonded together the 1st member 13a (aluminum plate) and the 2nd member 13b (copper plate) which consist of the same material as the cooler 15. FIG. That is, the linear expansion coefficient of the heat sink 13 was matched with the linear expansion coefficient of the cooler 15. In the following reference examples, a configuration that is different from the configuration of the above-described embodiment and that can reduce the possibility of peeling or breaking (such as cracks) of the insulating resin sheet 14 is described with reference to the drawings. explain.
［参考例１］
図２（ａ）は、参考例１の半導体装置２の全体構造の断面を示す概略図である。図２（ｂ）は、図２（ａ）における破線円の箇所を拡大表示した概略図である。この参考例１の構成は、冷却器２５の線膨張係数を放熱板２３の線膨張係数に合わせた構成である。
[Reference Example 1]
FIG. 2A is a schematic view showing a cross section of the entire structure of the semiconductor device 2 of Reference Example 1. FIG. FIG. 2B is a schematic view in which a portion of a broken-line circle in FIG. The configuration of the reference example 1 is a configuration in which the linear expansion coefficient of the cooler 25 is matched to the linear expansion coefficient of the heat sink 23.
この構成によっても、半導体装置２に熱ストレスが加わったとしても、放熱板２３と冷却器２５との間で線膨張に差がほとんど生じない。よって、絶縁樹脂シート１４の接合界面にかかるせん断応力を減少させることができ、絶縁樹脂シート１４の剥離や破壊（クラックなど）が発生するおそれを低減させることができる。 Even with this configuration, even if thermal stress is applied to the semiconductor device 2, there is almost no difference in linear expansion between the heat sink 23 and the cooler 25. Therefore, the shear stress applied to the bonding interface of the insulating resin sheet 14 can be reduced, and the possibility that the insulating resin sheet 14 is peeled off or broken (such as cracks) can be reduced.
［参考例２］
図３（ａ）は、参考例２の半導体装置３の全体構造の断面を示す概略図である。図３（ｂ）は、図３（ａ）における破線円の箇所を拡大表示した概略図である。この参考例２の構成は、絶縁樹脂シート３４を２層構造にする構成である。そして、絶縁樹脂シート３４の冷却器１５と接触する第１層３４ａの線膨張係数を、冷却器１５と同等の線膨張係数に設定する。例えば、冷却器１５がアルミニウムの材料で形成されていれば、第１層３４ａの線膨張係数をアルミニウムの線膨張係数に相当する２３ｐｐｍ／Ｋに設定する。また、絶縁樹脂シート１４の放熱板３３と接触する第２層３４ｂの線膨張係数を、放熱板３３と同等の線膨張係数に設定する。例えば、放熱板３３が銅の材料で形成されていれば、第２層３４ｂの線膨張係数を銅の線膨張係数に相当する１７ｐｐｍ／Ｋに設定する。
[Reference Example 2]
FIG. 3A is a schematic view showing a cross section of the entire structure of the semiconductor device 3 of Reference Example 2. FIG. FIG. 3B is a schematic diagram in which a broken-line circle portion in FIG. The configuration of the reference example 2 is a configuration in which the insulating resin sheet 34 has a two-layer structure. And the linear expansion coefficient of the 1st layer 34a which contacts the cooler 15 of the insulating resin sheet 34 is set to the linear expansion coefficient equivalent to the cooler 15. For example, if the cooler 15 is made of an aluminum material, the linear expansion coefficient of the first layer 34a is set to 23 ppm / K corresponding to the linear expansion coefficient of aluminum. Further, the linear expansion coefficient of the second layer 34 b in contact with the heat radiating plate 33 of the insulating resin sheet 14 is set to a linear expansion coefficient equivalent to that of the heat radiating plate 33. For example, if the heat radiating plate 33 is formed of a copper material, the linear expansion coefficient of the second layer 34b is set to 17 ppm / K corresponding to the linear expansion coefficient of copper.
この構成では、半導体装置３に熱ストレスが加わったときに放熱板３３と冷却器１５との間に生じる線膨張の差を、絶縁樹脂シート３４自体が吸収する。よって、絶縁樹脂シート３４の接合界面にせん断応力がかかっても、絶縁樹脂シート３４の剥離や破壊（クラックなど）が発生するおそれを低減させることができる。 In this configuration, the insulating resin sheet 34 itself absorbs the difference in linear expansion that occurs between the radiator plate 33 and the cooler 15 when thermal stress is applied to the semiconductor device 3. Therefore, even if a shear stress is applied to the bonding interface of the insulating resin sheet 34, the possibility that the insulating resin sheet 34 is peeled off or broken (such as cracks) can be reduced.
本発明は、半導体素子と放熱部材とを封止したパワーモジュールに、当該半導体素子を冷却する冷却器を備えた、半導体装置などに利用可能である。 INDUSTRIAL APPLICABILITY The present invention can be used for a semiconductor device or the like provided with a power module in which a semiconductor element and a heat dissipation member are sealed, and a cooler that cools the semiconductor element.
１、２、３、１００ 半導体装置
１０、１１０ 半導体素子
１３、２３、３３、１３０ 放熱板（放熱部材）
１４、３４、１４０ 絶縁樹脂シート
１５、２５、１５０ 冷却器
１６、１６０ 樹脂部材
1, 2, 3, 100 Semiconductor device 10, 110 Semiconductor element 13, 23, 33, 130 Heat radiating plate (heat radiating member)
14, 34, 140 Insulating resin sheet 15, 25, 150 Cooler 16, 160 Resin member
Claims (1)
前記放熱部材は、
前記絶縁樹脂シートに接合される第１部材と、前記半導体素子に接合される第２部材とを、貼り合わせたクラッド材で構成され、
前記第１部材が、前記冷却器と同じ材料または前記冷却器と同等の線膨張係数を有する材料で形成されていることを特徴とする、半導体装置。 A semiconductor device in which a heat dissipating member, an insulating resin sheet, and a cooler are sequentially joined to at least one main surface of a semiconductor element,
The heat dissipation member is
The first member joined to the insulating resin sheet and the second member joined to the semiconductor element are composed of a clad material bonded together,
The semiconductor device, wherein the first member is made of the same material as the cooler or a material having a linear expansion coefficient equivalent to that of the cooler.
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| JP2014246080A JP2016111141A (en) | 2014-12-04 | 2014-12-04 | Semiconductor device |
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| JP2014246080A JP2016111141A (en) | 2014-12-04 | 2014-12-04 | Semiconductor device |
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| JP2016111141A true JP2016111141A (en) | 2016-06-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6418348B1 (en) * | 2017-08-14 | 2018-11-07 | 東洋インキＳｃホールディングス株式会社 | Composite material |
| CN114078793A (en) * | 2020-08-21 | 2022-02-22 | 昭和电工株式会社 | Cooling device and method for manufacturing cooling device |
-
2014
- 2014-12-04 JP JP2014246080A patent/JP2016111141A/en active Pending
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|---|---|---|---|---|
| US11407201B2 (en) | 2017-08-14 | 2022-08-09 | Toyo Ink Sc Holdings Co., Ltd. | Composite member |
| KR102535298B1 (en) * | 2017-08-14 | 2023-05-22 | 토요잉크Sc홀딩스주식회사 | composite member |
| JP2019036716A (en) * | 2017-08-14 | 2019-03-07 | 東洋インキＳｃホールディングス株式会社 | Composite material |
| KR20200040787A (en) * | 2017-08-14 | 2020-04-20 | 토요잉크Sc홀딩스주식회사 | Composite member |
| CN111052358A (en) * | 2017-08-14 | 2020-04-21 | 东洋油墨Sc控股株式会社 | composite component |
| EP3671827A4 (en) * | 2017-08-14 | 2021-05-19 | Toyo Ink SC Holdings Co., Ltd. | COMPOSITE ELEMENT |
| TWI759506B (en) * | 2017-08-14 | 2022-04-01 | 日商東洋油墨Ｓｃ控股股份有限公司 | Composite member |
| CN111052358B (en) * | 2017-08-14 | 2023-07-18 | 东洋油墨Sc控股株式会社 | Composite member |
| WO2019035445A1 (en) * | 2017-08-14 | 2019-02-21 | 東洋インキＳｃホールディングス株式会社 | Composite member |
| JP6418348B1 (en) * | 2017-08-14 | 2018-11-07 | 東洋インキＳｃホールディングス株式会社 | Composite material |
| CN114078793A (en) * | 2020-08-21 | 2022-02-22 | 昭和电工株式会社 | Cooling device and method for manufacturing cooling device |
| JP7613023B2 (en) | 2020-08-21 | 2025-01-15 | 株式会社レゾナック | Cooling device and method for manufacturing the cooling device |
| JP2022035781A (en) * | 2020-08-21 | 2022-03-04 | 昭和電工株式会社 | Cooler and manufacturing method therefor |
| CN114078793B (en) * | 2020-08-21 | 2025-11-28 | 株式会社力森诺科 | Cooling device and method for manufacturing cooling device |
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