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JP2016020524A - Electric element - Google Patents

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JP2016020524A
JP2016020524A JP2014144249A JP2014144249A JP2016020524A JP 2016020524 A JP2016020524 A JP 2016020524A JP 2014144249 A JP2014144249 A JP 2014144249A JP 2014144249 A JP2014144249 A JP 2014144249A JP 2016020524 A JP2016020524 A JP 2016020524A
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plating layer
thin film
noble metal
base material
oxide thin
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JP6374718B2 (en
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健三 田中
Kenzo Tanaka
健三 田中
義貴 伊藤
Yoshitaka Ito
義貴 伊藤
貴哉 近藤
Takaya Kondo
貴哉 近藤
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Yazaki Corp
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Abstract

PROBLEM TO BE SOLVED: To solve the problem in which when a copper alloy is used for an electric contact for connector as it is, a surface oxidizes and increases in electric resistivity to cause a decrease in reliability of a product, to solve the problem in which although a noble metal plating layer is therefore formed on the surface of the Cu alloy to prevent the surface oxidation, use of the noble metal plating layer raises the cost, and to further improve wear resistance, corrosion resistance, heat resistance, etc.SOLUTION: The problem is solved by an electric contact for connector formed by providing an oxide thin film 16 doped with an element on a base material 12.SELECTED DRAWING: Figure 1

Description

本発明は、とくにコネクタ用電気接点として有用な電気素子に関する。   The present invention relates to an electrical element particularly useful as an electrical contact for a connector.

一般的にコネクタ用電気接点は、主にＣｕ合金から形成されているが、Ｃｕ合金をそのまま用いると、表面が酸化し電気抵抗率が高くなり、製品の信頼性が低下するという問題点がある。とくに、小型かつ低接触荷重の電気接点では、高抵抗の酸化膜により接点部での金属同士が接触する面（真実接触面）が非常に小さくなってしまい、接触抵抗が上昇するという問題がある。   Generally, the electrical contact for a connector is mainly formed of a Cu alloy. However, if the Cu alloy is used as it is, there is a problem in that the surface is oxidized, the electrical resistivity is increased, and the reliability of the product is lowered. . In particular, a small and low contact load electrical contact has a problem in that the contact surface between the metal parts at the contact portion (true contact surface) becomes very small due to the high resistance oxide film, and the contact resistance increases. .

そこで、通常は、Ｃｕ合金の表面に金や銀等の貴金属めっきを行って貴金属めっき層を形成し、Ｃｕ合金の表面の酸化を防止し、製品の信頼性を確保している。なお耐腐食性や耐摩耗性を確保するためには、貴金属めっき層にある程度の厚さを設けている。これとは別に、電気自動車の蓄電池の充電に使用されるような、数十〜数百アンペアという比較的大電流で使用される場合にも、貴金属めっき層を厚くする必要がある。   Therefore, normally, noble metal plating such as gold or silver is formed on the surface of the Cu alloy to form a noble metal plating layer, thereby preventing the surface of the Cu alloy from being oxidized and ensuring the reliability of the product. In order to ensure corrosion resistance and wear resistance, the noble metal plating layer is provided with a certain thickness. Apart from this, even when used at a relatively large current of several tens to several hundreds of amperes, such as used for charging a storage battery of an electric vehicle, it is necessary to increase the thickness of the noble metal plating layer.

しかし、貴金属めっき層を厚くすればするほど、コストが高くなるという問題点があり、当業界では使用される貴金属量を低減する技術が求められていた。
また、貴金属めっき層としてＡｇを用いた場合、Ａｇは硫化等の腐食に弱く、すぐに変色するという問題点がある。そこで、Ａｇめっき層の表面に変色防止剤を塗布しているが、得られる塗布膜は通常、非常に脆く、プラス成形や接点の嵌合等により剥がれてしまい、Ａｇの変色を有効に防止できないという問題点もあった。 However, there is a problem that the thicker the noble metal plating layer, the higher the cost, and a technique for reducing the amount of noble metal used in the industry has been demanded.
Further, when Ag is used as the noble metal plating layer, Ag is vulnerable to corrosion such as sulfidation and has a problem that it quickly changes color. Therefore, although the anti-discoloring agent is applied to the surface of the Ag plating layer, the obtained coating film is usually very brittle and peels off due to plus molding, contact fitting, etc., and Ag discoloration cannot be effectively prevented. There was also a problem.

例えば下記特許文献１には、基材上に例えばＳｎからなる金属層を形成し、その表面に形成された酸化物層を除去した後、該金属層上にＳｎＯ２のような酸化物層を形成するコネクタ用電気接点材料の製造方法が開示されている。 For example, in Patent Document 1 below, a metal layer made of, for example, Sn is formed on a base material, an oxide layer formed on the surface thereof is removed, and then an oxide layer such as SnO 2 is formed on the metal layer. A method of manufacturing an electrical contact material for a connector to be formed is disclosed.

特開２０１２−２３７０５５号公報JP 2012-237055 A

しかしながら、上記のような先行技術では、貴金属めっき層を使用した製品に比べ、コストは低くすることはできるが、当業界ではさらなる性能の向上が求められている。   However, in the prior art as described above, the cost can be reduced as compared with a product using a noble metal plating layer, but further improvement in performance is required in the industry.

したがって本発明の目的は、低コストであり、かつ、基材の酸化による製品の信頼性の低下を防止するとともに、小型かつ低接触荷重の電気接点であっても、真実接触面を大きく保つことができ、接触抵抗の上昇の問題も解決し得る、電気素子を提供することにある。   Therefore, the object of the present invention is low cost, prevents deterioration of product reliability due to oxidation of the base material, and keeps the true contact surface large even for a small and low contact load electrical contact. It is an object of the present invention to provide an electrical element that can solve the problem of increased contact resistance.

本発明者は、鋭意研究を重ねた結果、基材上に、特定の酸化物薄膜を設けることにより、前記課題を解決できることを見出し、本発明を完成するに至った。
すなわち本発明は、下記（１）〜（８）を特徴としている。 As a result of intensive studies, the present inventor has found that the above problem can be solved by providing a specific oxide thin film on a base material, and has completed the present invention.
That is, the present invention is characterized by the following (1) to (8).

（１）基材上に、元素をドープした酸化物薄膜を設けてなることを特徴とする電気素子。
（２）前記元素が、導電性発現に寄与する元素であることを特徴とする前記（１）に記載の電気素子。
（３）前記酸化物薄膜が、ＳｎＯおよび／またはＳｎＯ２であることを特徴とする前記（１）または（２）に記載の電気素子。
（４）導電性発現に寄与する元素が、Ｆ、Ｉｎ、Ｇａ、Ｔｌ、Ａｓ、ＳｂおよびＢｉからなる群から選択された少なくとも１種であることを特徴とする前記（２）に記載の電気素子。
（５）導電性発現に寄与する元素が、Ｆであることを特徴とする前記（２）に記載の電気素子。
（６）前記基材の表面が、貴金属でめっきされていることを特徴とする前記（１）〜（５）のいずれかに記載の電気素子。
（７）前記基材の表面が、前記貴金属としてＡｇでめっきされていることを特徴とする前記（６）に記載の電気素子。
（８）前記電気素子が、コネクタ用電気接点であることを特徴とする前記（１）〜（７）のいずれかに記載の電気素子。 (1) An electric element comprising an oxide thin film doped with an element on a substrate.
(2) The electric element according to (1), wherein the element is an element that contributes to the development of conductivity.
(3) The electric element according to (1) or (2), wherein the oxide thin film is SnO and / or SnO 2 .
(4) The electric element according to (2), wherein the element contributing to conductivity is at least one selected from the group consisting of F, In, Ga, Tl, As, Sb, and Bi. element.
(5) The electric element according to (2), wherein the element contributing to the development of conductivity is F.
(6) The electric element according to any one of (1) to (5), wherein a surface of the base material is plated with a noble metal.
(7) The electric element according to (6), wherein the surface of the base material is plated with Ag as the noble metal.
(8) The electrical element according to any one of (1) to (7), wherein the electrical element is an electrical contact for a connector.

本発明の電気素子は、基材上に特定の酸化物薄膜を設けているので、低コストであり、かつ、基材の酸化による製品の信頼性の低下を防止するとともに、小型かつ低接触荷重の電気接点であっても、真実接触面を大きく保つことができ、接触抵抗の上昇の問題も解決し得る、電気素子を提供することができる。
また本発明の電気素子は、基材の表面がＡｇでめっきされている場合であっても、実使用中のＡｇの変色を有効に防止することができ、電気素子の信頼性を向上させることができる。 Since the electrical element of the present invention is provided with a specific oxide thin film on a base material, it is low in cost and prevents deterioration of product reliability due to oxidation of the base material, and is small and has a low contact load. Even in the case of the electrical contact, it is possible to provide an electrical element capable of maintaining a large true contact surface and solving the problem of an increase in contact resistance.
In addition, the electric element of the present invention can effectively prevent discoloration of Ag during actual use even when the surface of the base material is plated with Ag, and improve the reliability of the electric element. Can do.

本発明の電気素子の一実施形態を説明するための断面図である。It is sectional drawing for demonstrating one Embodiment of the electric element of this invention. 本発明のコネクタ用電気接点の一実施形態を説明するための断面図である。It is sectional drawing for demonstrating one Embodiment of the electrical contact for connectors of this invention. 実施例で製造したコネクタ用電気接点３の断面図（ａ）およびその一部拡大図（ｂ）である。It is sectional drawing (a) and the one part enlarged view (b) of the electrical contact 3 for connectors manufactured in the Example.

以下、本発明をさらに詳細に説明する。
図１は、本発明の電気素子の一実施形態を説明するための断面図である。
図１に示す電気素子１は、基材１２上に、元素をドープした酸化物薄膜１６を設けてなる。
基材１２の材質としては、とくに制限されず、用途に応じて適宜選択することができる。
酸化物薄膜１６の材質としては、とくに制限されず、用途に応じて適宜選択することができる。また、酸化物薄膜１６にドープされる元素としては、とくに制限されず、用途に応じて適宜選択することができる。
また、基材１２および酸化物薄膜１６の厚さやサイズとしては、とくに制限されず、用途に応じて適宜選択することができる。
また、電気素子１の製造方法もとくに制限されず、従来公知の手法を適宜採用することができる。 Hereinafter, the present invention will be described in more detail.
FIG. 1 is a cross-sectional view for explaining an embodiment of the electric element of the present invention.
The electric element 1 shown in FIG. 1 is formed by providing an oxide thin film 16 doped with an element on a base 12.
The material of the substrate 12 is not particularly limited and can be appropriately selected depending on the application.
The material of the oxide thin film 16 is not particularly limited and can be appropriately selected depending on the application. Moreover, it does not restrict | limit especially as an element doped by the oxide thin film 16, According to a use, it can select suitably.
Moreover, it does not restrict | limit especially as the thickness and size of the base material 12 and the oxide thin film 16, It can select suitably according to a use.
Moreover, the manufacturing method of the electric element 1 is not particularly limited, and a conventionally known method can be appropriately employed.

以下、本発明の電気素子１がコネクタ用電気接点である場合を例にとり、本発明をさらに説明する。
図２は、本発明のコネクタ用電気接点の一実施形態を説明するための断面図である。図２において、コネクタ用電気接点２は、基材１２２上にＮｉめっき層１３２、貴金属めっき層１４２、酸化物薄膜１６２がこの順で設けられている。また、図示していないが、Ｎｉめっき層１３２と貴金属めっき層１４２との密着性を向上するために、別のめっき層（ストライクめっき層）を設けることもできる。 Hereinafter, the present invention will be further described by taking as an example the case where the electrical element 1 of the present invention is an electrical contact for a connector.
FIG. 2 is a cross-sectional view for explaining an embodiment of the connector electrical contact of the present invention. In FIG. 2, the connector electrical contact 2 is provided with a Ni plating layer 132, a noble metal plating layer 142, and an oxide thin film 162 in this order on a substrate 122. Although not shown, another plating layer (strike plating layer) may be provided in order to improve the adhesion between the Ni plating layer 132 and the noble metal plating layer 142.

この形態において、基材１２２の材質としては、一般的にＣｕや黄銅等のＣｕ合金を用いることができる。これとは別に、Ａｌ、Ｆｅまたはこれらの合金を用いることもできる。基材１２２の厚さは用途に応じて適宜決定することができ、また基材の形状は矩形型、円柱型、その他の異形型であることができる。   In this embodiment, the material of the base material 122 can generally be a Cu alloy such as Cu or brass. Apart from this, Al, Fe or alloys thereof can also be used. The thickness of the base material 122 can be appropriately determined according to the application, and the shape of the base material can be a rectangular shape, a cylindrical shape, or other irregular shapes.

基材１２２上には、必要に応じて、基材１２２に含まれる例えばＣｕまたはＣｕ合金が酸化物薄膜１６２上に拡散するのを防止するために、Ｎｉめっき層１３２を設けてもよい。Ｎｉめっき層１３２は、Ｎｉのほか、Ｆｅ−Ｎｉ合金やＳｎ−Ｎｉ合金等のＮｉ合金を使用することができる。Ｎｉめっき層１３２の厚さは、当該目的を達成できればよく、適宜決定される。   An Ni plating layer 132 may be provided on the base material 122 in order to prevent, for example, Cu or Cu alloy contained in the base material 122 from diffusing on the oxide thin film 162 as necessary. The Ni plating layer 132 can be made of Ni, such as Fe—Ni alloy or Sn—Ni alloy, in addition to Ni. The thickness of the Ni plating layer 132 is determined as appropriate as long as the object can be achieved.

Ｎｉめっき層１３２の表面上には、貴金属めっき層１４２が設けられる。貴金属めっき層１４２における貴金属としては、Ａｕ、Ａｇ等が挙げられる。貴金属めっき層１４２の厚さは、用途やコストを勘案して適宜決定すればよい。   A noble metal plating layer 142 is provided on the surface of the Ni plating layer 132. Examples of the noble metal in the noble metal plating layer 142 include Au and Ag. The thickness of the noble metal plating layer 142 may be appropriately determined in consideration of the use and cost.

貴金属めっき層１４２上には、元素をドープした酸化物薄膜１６２が設けられる。
酸化物としては、ＳｎＯ、ＳｎＯ２、ＮｉＯ、Ｎｉ２Ｏ３、ＺｎＯ、ＣｕＯ２、ＣｕＡｌＯ２、Ｉｎ２Ｏ３、またはこれらの混合物等が挙げられる。中でも本発明の効果が向上するという観点から、酸化物は、ＳｎＯおよび／またはＳｎＯ２であるのが好ましい。 On the noble metal plating layer 142, an oxide thin film 162 doped with an element is provided.
Examples of the oxide include SnO, SnO 2 , NiO, Ni 2 O 3 , ZnO, CuO 2 , CuAlO 2 , In 2 O 3 , or a mixture thereof. From the viewpoint of inter alia improving the effect of the present invention, the oxide is preferably a SnO and / or SnO 2.

前記元素としては、導電性発現に寄与する元素が好ましく、例えばＦ、Ｉｎ、Ｇａ、Ｔｌ、Ａｓ、ＳｂおよびＢｉからなる群から選択された少なくとも１種が挙げられる。中でも本発明の効果の観点から、また、導電性、耐摩耗性に優れるという観点から、Ｆが好ましく、酸化物薄膜１６２は、フッ素ドープ酸化錫（ＦＴＯ）であるのがとくに好ましい。   As said element, the element which contributes to electroconductivity expression is preferable, for example, at least 1 sort (s) selected from the group which consists of F, In, Ga, Tl, As, Sb, and Bi is mentioned. Among these, from the viewpoint of the effect of the present invention and from the viewpoint of excellent conductivity and wear resistance, F is preferable, and the oxide thin film 162 is particularly preferably fluorine-doped tin oxide (FTO).

酸化物薄膜１６２の厚さとしては、例えば１０ｎｍ〜１μｍである。   The thickness of the oxide thin film 162 is, for example, 10 nm to 1 μm.

次に、コネクタ用電気接点２の製造方法について説明する。
まず、基材１２２を準備し、必要に応じてＮｉめっき層１３２、貴金属めっき層１４２を順次形成する。各めっき層は、公知のめっき法により形成できる。例えば、電解めっき法は、慣用的に行なわれている方法であり、装置構成も簡易で、また層厚の制御も比較的容易であることから好ましい。 Next, a method for manufacturing the connector electrical contact 2 will be described.
First, the base material 122 is prepared, and the Ni plating layer 132 and the noble metal plating layer 142 are sequentially formed as necessary. Each plating layer can be formed by a known plating method. For example, the electrolytic plating method is a method that is conventionally performed, and is preferable because the apparatus configuration is simple and the control of the layer thickness is relatively easy.

次に、貴金属めっき層１４２上に、元素をドープした酸化物薄膜１６２を設ける。この酸化物薄膜１６２は、例えばスプレー熱分解（ＳＰＤ：Spray Pyrolysis Deposition）法により設けることができる。ＳＰＤ法はよく知られているように、基材を成膜温度まで加熱し、そこに向けて霧化器等の噴霧手段を用いて膜の原料となる溶液を噴霧することにより、反応初期には、基材表面に付着した液滴中の溶媒の蒸発と、溶質の熱分解に続く加水分解反応および熱酸化反応することにより結晶を形成させ、反応が進むにつれその結晶上に、液滴が付着し、液滴中の溶媒蒸発と共に、溶質および下部の結晶間で結晶成長を進行させ、薄膜を形成する方法である。ＳＰＤ法を採用することにより、酸化物薄膜１６２をピンポイントで、および／または、任意の形状で成膜することができる。なお酸化物薄膜１６２は、ＳＰＤ法以外にも公知の方法を採用し、形成することができる。   Next, an oxide thin film 162 doped with an element is provided on the noble metal plating layer 142. The oxide thin film 162 can be provided by, for example, a spray pyrolysis (SPD) method. As is well known in the SPD method, the substrate is heated to the film formation temperature and sprayed with the solution that is the raw material of the film using a spraying means such as an atomizer toward the initial stage. Forms a crystal by evaporating the solvent in the droplets attached to the substrate surface, followed by the hydrolysis and thermal oxidation reactions following the thermal decomposition of the solute, and as the reaction proceeds, the droplets form on the crystals. This is a method of forming a thin film by adhering and evaporating a solvent between droplets and advancing crystal growth between a solute and a lower crystal. By employing the SPD method, the oxide thin film 162 can be formed in a pinpoint and / or arbitrary shape. Note that the oxide thin film 162 can be formed by a known method other than the SPD method.

このようにして形成された酸化物薄膜１６２は、導電性（例えば比抵抗値が１×１０７Ω・ｃｍ以下）を有し、かつ、上記の本発明の効果を奏するとともに、また、耐摩耗性、耐腐食性、耐熱性等に優れる。したがって、その下層に設けられる貴金属めっき層１４２の厚さを薄くすることができ、製造コスト減少に寄与することができる。 The oxide thin film 162 formed in this manner has conductivity (for example, a specific resistance value of 1 × 10 7 Ω · cm or less), exhibits the effects of the present invention, and wear resistance. Excellent in corrosion resistance, corrosion resistance, heat resistance, etc. Therefore, the thickness of the noble metal plating layer 142 provided in the lower layer can be reduced, which can contribute to a reduction in manufacturing cost.

なお、上記では本発明の電気素子１として、コネクタ用電気接点２を例にとり本発明を説明したが、この用途以外にも、当業界で公知の電気素子としての各種用途に利用することができる。   In the above description, the present invention has been described by taking the connector electrical contact 2 as an example of the electrical element 1 of the present invention. However, in addition to this application, it can be used for various applications as an electrical element known in the art. .

以下、本発明を実施例によりさらに説明するが、本発明は下記例に制限されるものではない。   EXAMPLES Hereinafter, although an Example demonstrates this invention further, this invention is not restrict | limited to the following example.

図３に示すコネクタ用電気接点３を製造した。図３は、本実施例で製造したコネクタ用電気接点３の断面図（ａ）およびその一部拡大図（ｂ）である。コネクタ用電気接点３は、図３（ａ）に示すように、オス端子３２およびメス端子３４からなり、その嵌合部は、図３（ｂ）の一部拡大図に示されるように、オス端子３２側が基材３２２、Ａｇめっき層３２４およびＦＴＯ薄膜３２６から順次形成され、メス端子３４側のＦＴＯ薄膜３４６と接触している。また、メス端子３４もオス端子３２と同様の構成を有している。すなわち、メス端子３４は、基材３２２と、Ａｇめっき層３４４とを有している。   The connector electrical contact 3 shown in FIG. 3 was manufactured. FIG. 3 is a cross-sectional view (a) and a partially enlarged view (b) of the connector electrical contact 3 manufactured in the present embodiment. As shown in FIG. 3 (a), the connector electrical contact 3 includes a male terminal 32 and a female terminal 34, and the fitting portion thereof is a male as shown in a partially enlarged view of FIG. 3 (b). The terminal 32 side is formed sequentially from the base material 322, the Ag plating layer 324, and the FTO thin film 326, and is in contact with the FTO thin film 346 on the female terminal 34 side. The female terminal 34 has the same configuration as the male terminal 32. That is, the female terminal 34 has a base material 322 and an Ag plating layer 344.

基材３２２としては黄銅からなるＣｕ合金を用い、その上に電解めっき法によりＡｇめっき層３２４を形成した。続いて、Ａｇめっき層３２４上に、ＦＴＯ薄膜３２６をＳＰＤ法により設け、オス端子３２を製造した。なお、オス端子３２とメス端子３４の基材の材質が互いに異なっていてもよい。   A Cu alloy made of brass was used as the substrate 322, and an Ag plating layer 324 was formed thereon by an electrolytic plating method. Then, the FTO thin film 326 was provided on the Ag plating layer 324 by the SPD method, and the male terminal 32 was manufactured. In addition, the material of the base material of the male terminal 32 and the female terminal 34 may differ from each other.

本実施例のコネクタ用電気接点３は、ＦＴＯ薄膜３２６を設けない場合と比べ、これと同様の性能を確保するためには、Ａｇの使用量を各段に減少させることができ、低コストであるとともに、Ｃｕ合金の酸化による製品の信頼性の低下を防止することもできる。また、コネクタ用電気接点３が小型かつ低接触荷重の電気接点であっても、真実接触面を大きく保つことができ、接触抵抗の上昇の問題も解決することができる。さらに、実使用中のＡｇの変色も有効に防止され得る。   Compared with the case where the FTO thin film 326 is not provided, the connector electrical contact 3 of this embodiment can reduce the amount of Ag used in each stage in order to ensure the same performance as this. In addition, it is possible to prevent a decrease in product reliability due to oxidation of the Cu alloy. Further, even if the connector electrical contact 3 is a small and low contact load electrical contact, the true contact surface can be kept large, and the problem of increased contact resistance can be solved. Furthermore, Ag discoloration during actual use can be effectively prevented.

ここで、上述した本発明に係る電気素子の実施形態の特徴をそれぞれ以下［１］〜［８］に簡潔に纏めて列記する。
［１］ 基材（１２）上に、元素をドープした酸化物薄膜（１６）を設けてなることを特徴とする電気素子（１）。
［２］ 前記元素が、導電性発現に寄与する元素であることを特徴とする上記［１］に記載の電気素子（１）。
［３］ 前記酸化物薄膜（１６）が、ＳｎＯおよび／またはＳｎＯ２であることを特徴とする上記［１］または［２］に記載の電気素子（１）。
［４］ 導電性発現に寄与する元素が、Ｆ、Ｉｎ、Ｇａ、Ｔｌ、Ａｓ、ＳｂおよびＢｉからなる群から選択された少なくとも１種であることを特徴とする上記［２］に記載の電気素子（１）。
［５］ 導電性発現に寄与する元素が、Ｆであることを特徴とする上記［２］に記載の電気素子（１）。
［６］ 前記基材の表面が、貴金属でめっきされていることを特徴とする上記［１］〜［５］のいずれかに記載の電気素子（１）。
［７］ 前記基材の表面が、前記貴金属としてＡｇでめっきされていることを特徴とする上記［６］に記載の電気素子（１）。
［８］ 前記電気素子が、コネクタ用電気接点であることを特徴とする上記［１］〜［７］のいずれかに記載の電気素子（１）。 Here, the features of the above-described embodiments of the electric element according to the present invention are briefly summarized and listed in the following [1] to [8], respectively.
[1] An electric element (1), wherein an oxide thin film (16) doped with an element is provided on a substrate (12).
[2] The electric element (1) according to the above [1], wherein the element is an element contributing to the development of conductivity.
[3] the oxide thin film (16), SnO and / or electrical devices according to [1] or [2], which is a SnO 2 (1).
[4] The electricity according to [2], wherein the element contributing to the development of conductivity is at least one selected from the group consisting of F, In, Ga, Tl, As, Sb, and Bi. Element (1).
[5] The electric element (1) according to the above [2], wherein the element contributing to conductivity is F.
[6] The electric element (1) according to any one of the above [1] to [5], wherein the surface of the base material is plated with a noble metal.
[7] The electric element (1) according to [6], wherein the surface of the base material is plated with Ag as the noble metal.
[8] The electrical element (1) according to any one of [1] to [7], wherein the electrical element is an electrical contact for a connector.

１ 電気素子
２，３ コネクタ用電気接点
１２，１２２，３２２ 基材
１６，１６２ 酸化物薄膜
１３２ Ｎｉめっき層
１４２ 貴金属めっき層
３２ オス端子
３４ メス端子
３２４，３４４ Ａｇめっき層
３２６、３４６ ＦＴＯ薄膜 DESCRIPTION OF SYMBOLS 1 Electrical element 2, 3 Connector electrical contact 12, 122, 322 Base material 16, 162 Oxide thin film 132 Ni plating layer 142 Noble metal plating layer 32 Male terminal 34 Female terminal 324, 344 Ag plating layer 326, 346 FTO thin film

Claims (8)

基材上に、元素をドープした酸化物薄膜を設けてなることを特徴とする電気素子。   An electrical element comprising an oxide thin film doped with an element on a base material. 前記元素が、導電性発現に寄与する元素であることを特徴とする請求項１に記載の電気素子。   The electric element according to claim 1, wherein the element is an element that contributes to the development of conductivity. 前記酸化物薄膜が、ＳｎＯおよび／またはＳｎＯ２であることを特徴とする請求項１または２に記載の電気素子。 The electric element according to claim 1, wherein the oxide thin film is SnO and / or SnO 2 . 導電性発現に寄与する元素が、Ｆ、Ｉｎ、Ｇａ、Ｔｌ、Ａｓ、ＳｂおよびＢｉからなる群から選択された少なくとも１種であることを特徴とする請求項２に記載の電気素子。   The electric element according to claim 2, wherein the element contributing to conductivity is at least one selected from the group consisting of F, In, Ga, Tl, As, Sb, and Bi. 導電性発現に寄与する元素が、Ｆであることを特徴とする請求項２に記載の電気素子。   The electric element according to claim 2, wherein the element contributing to the development of conductivity is F. 前記基材の表面が、貴金属でめっきされていることを特徴とする請求項１〜５のいずれか１項に記載の電気素子。   The electric element according to claim 1, wherein a surface of the base material is plated with a noble metal. 前記基材の表面が、前記貴金属としてＡｇでめっきされていることを特徴とする請求項６に記載の電気素子。   The electric element according to claim 6, wherein the surface of the base material is plated with Ag as the noble metal. 前記電気素子が、コネクタ用電気接点であることを特徴とする請求項１〜７のいずれか１項に記載の電気素子。   The electrical element according to claim 1, wherein the electrical element is a connector electrical contact.
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