JP2011003780A - Conductive junction structure and method of manufacturing the same - Google Patents
Conductive junction structure and method of manufacturing the same Download PDFInfo
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- JP2011003780A JP2011003780A JP2009146508A JP2009146508A JP2011003780A JP 2011003780 A JP2011003780 A JP 2011003780A JP 2009146508 A JP2009146508 A JP 2009146508A JP 2009146508 A JP2009146508 A JP 2009146508A JP 2011003780 A JP2011003780 A JP 2011003780A
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 229910020836 Sn-Ag Inorganic materials 0.000 claims abstract description 13
- 229910020988 Sn—Ag Inorganic materials 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 239000011261 inert gas Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 238000005304 joining Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- XIKYYQJBTPYKSG-UHFFFAOYSA-N nickel Chemical compound [Ni].[Ni] XIKYYQJBTPYKSG-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
Description
本発明は、電気的な接続状態を形成する導電性接合構造に関し、ランド状接続端子とバネ状接触子を電気的に接合した接触面に金属間接合部を備える導電性接合構造に関する。 The present invention relates to a conductive joint structure that forms an electrical connection state, and relates to a conductive joint structure that includes an intermetallic joint on a contact surface that electrically joins a land-like connection terminal and a spring-like contact.
図6は、スパイラル状接触子と接続端子との金属間接合の概略を示す断面図であり、(a)は、接触前の状態を示し、(b)は、接触後の接触箇所に金属間接合部が生成されている状態を示す。
図6の(a)(b)に示すように、ランド状接続端子103aと、ランド状接続端子103aに付勢力を施してランド状接続端子103aと電気的に接触して基板103bの所定の導電部に電気的に導通するように接合されたスパイラル状接触子102とにおいて、ランド状接続端子103aとスパイラル状接触子102には、その接触面が鏡面処理された鏡面状平面103acと鏡面状平面102cを備え、ランド状接続端子103aとスパイラル状接触子102との鏡面状平面同士を対面させて重ね合わせ、スパイラル状接触子102が有するバネ性によって、鏡面状平面同士が密着され、さらに加圧されて金属間接合部109が生成され、電気的に強固に接合することができる(特許文献1参照)。
FIG. 6 is a cross-sectional view schematically showing the intermetallic bonding between the spiral contact and the connection terminal, where (a) shows a state before contact, and (b) shows metal indirect at the contact location after contact. The state where the merger is generated is shown.
As shown in FIGS. 6A and 6B, the land-like connection terminals 103a and the land-like connection terminals 103a are biased to come into electrical contact with the land-like connection terminals 103a so that the predetermined conductivity of the substrate 103b is obtained. In the spiral contact 102 joined so as to be electrically connected to the part, the land-like connection terminal 103a and the spiral contact 102 have a mirror-like plane 103ac and a mirror-like plane whose contact surfaces are mirror-finished. 102c, and the mirror-like planes of the land-like connection terminal 103a and the spiral contactor 102 face each other and overlap each other. The spring-like nature of the spiral contactor 102 brings the mirror-like planes into close contact with each other and further pressurizes. As a result, an intermetallic joint 109 is generated and can be electrically and firmly joined (see Patent Document 1).
しかしながら、前記従来例では、接続面に鏡面状平面を備えた接続端子と、先端部の上面に鏡面状平面を備えたスパイラル状接触子とを接合し、また、先端部の上面に鏡面状平面を備えたスパイラル状接触子同士を接合しているものである。
本発明は、ランド状接続端子とバネ状接触子を電気的に接合した接触面を鏡面状平面にすることなく金属間接合部を生成させて安定的に電気的な接続状態を形成することを目的とする。
However, in the conventional example, a connection terminal having a mirror-like plane on the connection surface and a spiral contact having a mirror-like plane on the top surface of the tip are joined, and the mirror-like plane is on the top of the tip. The spiral contactors provided with are joined together.
The present invention is to stably form an electrical connection state by generating an intermetallic joint without forming a contact surface obtained by electrically joining a land-like connection terminal and a spring-like contactor as a mirror-like plane. Objective.
請求項1に係る発明の導電性接合構造は、ランド状接続端子と、前記ランド状接続端子に付勢力を施して前記ランド状接続端子と電気的に接触するバネ状接触子とを備え、
前記ランド状接続端子は、前記バネ状接触子との接触面にSn―Agメッキが施され、
前記ランド状接続端子と前記バネ状接触子とを少なくとも一対設け、前記ランド状接続端子と前記バネ状接触子とを対面させて重ね合わせることによって、前記接触面に金属間接合部が生成されることを特徴とする。
The conductive joint structure of the invention according to claim 1 includes a land-like connection terminal, and a spring-like contactor that applies a biasing force to the land-like connection terminal and makes electrical contact with the land-like connection terminal,
The land-shaped connection terminal is Sn-Ag plated on the contact surface with the spring-shaped contact,
By providing at least one pair of the land-like connection terminal and the spring-like contact, and facing and overlapping the land-like connection terminal and the spring-like contact, an intermetallic joint is generated on the contact surface. It is characterized by that.
請求項2に係る発明は、請求項1に記載の導電性接合構造であって、前記バネ状接触子は、スパイラル状接触子であることを特徴とする。 The invention according to claim 2 is the conductive joint structure according to claim 1, wherein the spring-like contactor is a spiral contactor.
請求項3に係る発明は、請求項1に記載の導電性接合構造であって、前記バネ状接触子は、板バネ形状であることを特徴とする。 The invention according to claim 3 is the conductive joint structure according to claim 1, wherein the spring-like contactor has a leaf spring shape.
請求項4に係る発明は、請求項1に記載の導電性接合構造であって、前記バネ状接触子は、コイルバネ形状であることを特徴とする。 The invention according to claim 4 is the conductive joint structure according to claim 1, wherein the spring-like contactor has a coil spring shape.
請求項5に係る発明の導電性接合構造の製造方法は、前記ランド状接続端子と前記バネ状接触子とを少なくとも一対設け、前記ランド状接続端子と前記バネ状接触子とを対面させて重ね合わせることによって、前記接触面に金属間接合部が生成される導電性接合構造の製造方法であって、前記ランド状接続端子、前記バネ状接触子の少なくとも一方に低周波振動を印加して金属間接合部を生成させることを特徴とする。 According to a fifth aspect of the present invention, there is provided a method for manufacturing a conductive joint structure, wherein at least a pair of the land-like connection terminals and the spring-like contactors are provided, and the land-like connection terminals and the spring-like contactors face each other and overlap each other. A method of manufacturing a conductive joint structure in which an intermetallic joint is generated on the contact surface by combining, and applying low frequency vibration to at least one of the land-like connection terminal and the spring-like contactor An inter-joint is generated.
請求項6に係る発明の導電性接合構造の製造方法は、前記ランド状接続端子と前記バネ状接触子とを少なくとも一対設け、前記ランド状接続端子と前記バネ状接触子とを対面させて重ね合わせることによって、前記接触面に金属間接合部が生成される導電性接合構造の製造方法であって、前記ランド状接続端子と前記バネ状接触子との接合部を不活性ガス雰囲気にして金属間接合部を生成させることを特徴とする。 According to a sixth aspect of the present invention, there is provided a method for manufacturing a conductive joint structure, wherein at least a pair of the land-like connection terminals and the spring-like contactors are provided, and the land-like connection terminals and the spring-like contactors face each other and overlap each other. A method of manufacturing a conductive joint structure in which an intermetallic joint is generated on the contact surface by combining the metal, and the joint between the land-like connection terminal and the spring-like contact is made an inert gas atmosphere. An inter-joint is generated.
請求項7に係る発明の導電性接合構造の製造方法は、前記ランド状接続端子と前記バネ状接触子とを少なくとも一対設け、前記ランド状接続端子と前記バネ状接触子とを対面させて重ね合わせることによって、前記接触面に金属間接合部が生成される導電性接合構造の製造方法であって、前記ランド状接続端子と前記バネ状接触子との接合部を常温雰囲気および低温加熱雰囲気のどちらか一方にして金属間接合部を生成させることを特徴とする。 According to a seventh aspect of the present invention, there is provided a method for producing a conductive joint structure, wherein at least a pair of the land-like connection terminals and the spring-like contactors are provided, and the land-like connection terminals and the spring-like contactors face each other and overlap each other. A method for manufacturing a conductive joint structure in which an intermetallic joint is generated on the contact surface by combining the joints between the land-like connection terminal and the spring-like contact in a normal temperature atmosphere and a low-temperature heating atmosphere. One of them is characterized in that an intermetallic joint is generated.
請求項8に係る発明は、請求項7に記載の導電性接合構造の製造方法であって、前記低温加熱雰囲気は、スポット的な赤外線ランプによることを特徴とする。 The invention according to claim 8 is the method for manufacturing the conductive joint structure according to claim 7, wherein the low-temperature heating atmosphere is a spot-like infrared lamp.
請求項9に係る発明は、請求項7に記載の導電性接合構造の製造方法であって、前記低温加熱雰囲気は、加熱された不活性ガスによることを特徴とする。 The invention according to claim 9 is the method for manufacturing a conductive joint structure according to claim 7, wherein the low-temperature heating atmosphere is a heated inert gas.
請求項10に係る発明は、請求項7に記載の導電性接合構造の製造方法であって、前記低温加熱雰囲気は、ヒータを用いた加熱によることを特徴とする。 The invention according to claim 10 is the method of manufacturing a conductive joint structure according to claim 7, wherein the low temperature heating atmosphere is based on heating using a heater.
請求項11に係る発明は、請求項7に記載の導電性接合構造の製造方法であって、前記低温加熱雰囲気は、80〜120℃であることを特徴とする。 The invention according to an eleventh aspect is the method for producing a conductive joint structure according to the seventh aspect, wherein the low-temperature heating atmosphere is 80 to 120 ° C.
請求項1によれば、導電性接合構造は、ランド状接続端子と、ランド状接続端子に付勢力を施してランド状接続端子と電気的に接触するバネ状接触子とを備え、ランド状接続端子は、バネ状接触子との接触面にSn―Agメッキが施され、ランド状接続端子とバネ状接触子とを少なくとも一対設け、ランド状接続端子とバネ状接触子とを対面させて重ね合わせることによって、電子部品などに熱履歴を加えることなく、Sn―AgメッキとAuメッキとの間に金属間接合部を生成させ安定的に接合することができる。 According to claim 1, the conductive joint structure includes a land-like connection terminal, and a spring-like contact that applies an urging force to the land-like connection terminal to make electrical contact with the land-like connection terminal. The terminal is Sn-Ag plated on the contact surface with the spring-like contactor, and at least a pair of land-like connection terminals and spring-like contactors are provided, and the land-like connection terminals and the spring-like contactors face each other and overlap each other. By combining them, it is possible to generate an intermetallic joint between the Sn—Ag plating and the Au plating and stably join without adding a thermal history to the electronic component or the like.
請求項2によれば、バネ状接触子がスパイラル状接触子であるため、ランド状接続端子とスパイラル状接触子とを対面させて重ね合わせることによって、接触面に金属間接合部を生成させ安定的に接合することができる。 According to the second aspect, since the spring-like contact is a spiral contact, the land-like connection terminal and the spiral contact are faced and overlapped to generate an intermetallic joint on the contact surface. Can be joined together.
請求項3によれば、バネ状接触子は、板バネ形状であるため、ランド状接続端子と板バネ形状の接触子とを対面させて重ね合わせることによって、接触面に金属間接合部を生成させ安定的に接合することができる。 According to the third aspect of the present invention, since the spring-like contact has a leaf spring shape, an intermetallic joint is generated on the contact surface by causing the land-like connection terminal and the leaf spring-like contact to face each other and overlap each other. And can be stably joined.
請求項4によれば、バネ状接触子は、コイルバネ形状であるため、ランド状接続端子とコイルバネ形状の接触子とを対面させて重ね合わせることによって、接触面に金属間接合部を生成させ安定的に接合することができる。 According to the fourth aspect of the present invention, since the spring-like contact has a coil spring shape, the land-like connection terminal and the coil spring-shaped contact are faced and overlapped to generate an intermetallic joint on the contact surface. Can be joined together.
請求項5によれば、ランド状接続端子とバネ状接触子とを少なくとも一対設け、ランド状接続端子とバネ状接触子とを対面させて重ね合わせ、ランド状接続端子、バネ状接触子の少なくとも一方に低周波振動を印加して電子部品などに熱履歴を加えることなく、接続端子と接触子との間に金属間接合部を生成させることができる。 According to claim 5, at least a pair of land-like connection terminals and spring-like contacts are provided, and the land-like connection terminals and the spring-like contactors face each other to overlap each other, so that at least one of the land-like connection terminals and the spring-like contactors is provided. On the other hand, it is possible to generate an intermetallic joint between the connection terminal and the contact without applying thermal history to the electronic component by applying low frequency vibration.
請求項6によれば、ランド状接続端子とバネ状接触子とを少なくとも一対設け、ランド状接続端子とバネ状接触子とを対面させて重ね合わせ、ランド状接続端子とバネ状接触子との接合部を不活性ガス雰囲気にして電子部品などに熱履歴を加えることなく、接続端子と接触子との間に金属間接合部を生成させることができる。 According to the sixth aspect, at least a pair of land-like connection terminals and spring-like contacts are provided, the land-like connection terminals and the spring-like contactors face each other, and the land-like connection terminals and the spring-like contactors are overlapped. It is possible to generate an intermetallic joint between the connection terminal and the contact without placing the joint in an inert gas atmosphere and applying a thermal history to the electronic component or the like.
請求項7によれば、ランド状接続端子とバネ状接触子とを少なくとも一対設け、ランド状接続端子とバネ状接触子とを対面させて重ね合わせ、ランド状接続端子とバネ状接触子との接合部を常温雰囲気および低温加熱雰囲気のどちらか一方にして、電子部品などに熱履歴を加えることなく、接続端子と接触子との間に金属間接合部を生成させることができる。 According to the seventh aspect, at least a pair of land-like connection terminals and spring-like contacts are provided, the land-like connection terminals and the spring-like contactors face each other, and the land-like connection terminals and the spring-like contactors are overlapped. It is possible to generate an intermetallic joint between the connection terminal and the contact without adding a thermal history to the electronic component or the like by setting the joint to one of a normal temperature atmosphere and a low temperature heating atmosphere.
請求項8によれば、低温加熱雰囲気は、スポット的な赤外線ランプを用いることによって、接続端子と接触子との間を効果的に加熱し、金属間接合部を生成させることができる。 According to the eighth aspect of the present invention, the low temperature heating atmosphere can effectively heat the space between the connection terminal and the contact by using a spot-like infrared lamp to generate an intermetallic joint.
請求項9によれば、低温加熱雰囲気は、加熱された不活性ガスを用いることによって、接続端子と接触子との間を酸化することなく効果的に加熱し、金属間接合部を生成させることができる。 According to the ninth aspect of the present invention, the low temperature heating atmosphere uses the heated inert gas to effectively heat the connection terminal and the contact without being oxidized, thereby generating an intermetallic joint. Can do.
請求項10によれば、低温加熱雰囲気は、ヒータを用いて加熱させることによって、接続端子と接触子との間を効果的に加熱し、金属間接合部を生成させることができる。 According to the tenth aspect, the low-temperature heating atmosphere can be heated using a heater to effectively heat the connection terminal and the contact, thereby generating an intermetallic joint.
請求項11によれば、低温加熱雰囲気は、80〜120℃とすることによって、電子部品などに熱履歴を加えることなく、接続端子と接触子との間に金属間接合部を生成させることができる。
これによって、精度が良く、優れた電気的特性と優れたバネ追従性を有するバネ状接触子を備えた導電性接合構造を容易に形成することができる。
According to the eleventh aspect, by setting the low temperature heating atmosphere to 80 to 120 ° C., it is possible to generate an intermetallic joint between the connection terminal and the contact without adding a thermal history to the electronic component or the like. it can.
Thereby, it is possible to easily form a conductive joint structure including a spring-like contactor with high accuracy, excellent electrical characteristics, and excellent spring followability.
<第1の実施形態>
以下、本発明に係る導電性接合構造の第1の実施形態を図面を参照しながら詳細に説明する。
図1は、本発明の第1の実施形態を説明するための導電性接合構造を示し、(a)は、スパイラル状接触子とランド状接続端子の接触前の状態を示し、(b)は、接触後に接触箇所に金属間接合部が生成されている状態を示す。
図1(a)(b)に示すように、導電性接合構造1は、ランド状接続端子3aと、ランド状接続端子3aに付勢力を施してランド状接続端子3aと電気的に接触するバネ状接触子(スパイラル状接触子)2とを備え、ランド状接続端子3aは、バネ状接触子2との接触面にSn―Agメッキ3acが施され、ランド状接続端子3aとバネ状接触子2とを少なくとも一対設け、ランド状接続端子3aとバネ状接触子2とを対面させて重ね合わせ、電子部品3、およびスパイラル状接触子2の何れか一方に低周波の振動、例えば50Hzの振動を印加することによって接触面に金属間接合部9が容易に生成される。低周波振動はピエゾ素子によるが、低周波振動を発生するものであれば、携帯電話のバイブに利用されるモータによって発生させても良い。また、バネ状接触子(スパイラル状接触子2)を備えた電子部品3やプリント基板を大きなテーブル上に固定して30Hz程度の低周波で振動させて金属間接合を生成させることも可能である。また、接続端子や接触子の表面にSn-Agメッキを施すことによって金属間接合を生成させているが、接続端子や接触子の表面をSn-Agで被う場合、メッキに限定するものではなく、スパッタ法や塗布でも構わない。
<First Embodiment>
Hereinafter, a first embodiment of a conductive bonding structure according to the present invention will be described in detail with reference to the drawings.
FIG. 1 shows a conductive joint structure for explaining a first embodiment of the present invention, (a) shows a state before contact between a spiral contact and a land-like connection terminal, and (b) shows The state where the joint part between metals is produced | generated in the contact location after contact is shown.
As shown in FIGS. 1 (a) and 1 (b), the conductive bonding structure 1 includes a land-like connection terminal 3a and a spring that applies an urging force to the land-like connection terminal 3a and makes electrical contact with the land-like connection terminal 3a. The land-like connection terminal 3a is provided with a Sn-Ag plating 3ac on the contact surface with the spring-like contact 2, and the land-like connection terminal 3a and the spring-like contact are provided. 2 and at least a pair of land-like connection terminals 3a and spring-like contactors 2 facing each other, and low frequency vibration, for example, 50 Hz vibration, is applied to either the electronic component 3 or the spiral contactor 2. Is easily generated on the contact surface. The low-frequency vibration is generated by a piezo element. However, the low-frequency vibration may be generated by a motor used to vibrate a mobile phone as long as it generates low-frequency vibration. It is also possible to fix the electronic component 3 or printed circuit board provided with a spring-like contact (spiral contact 2) on a large table and vibrate at a low frequency of about 30 Hz to generate a metal-to-metal joint. . In addition, Sn-Ag plating is applied to the surface of the connection terminal or contactor to generate the metal-to-metal joint. However, when the surface of the connection terminal or contactor is covered with Sn-Ag, it is not limited to plating. Alternatively, sputtering or coating may be used.
図2は、金属間接合を説明する拡大断面図であり、金属間接合部が生成される雰囲気を示している。図2に示すように、導電性接合構造1を形成するためには、電子部品3やバネ状接触子(スパイラル状接触子)2の接合部(金属間接合部9)をチャンバー11内に置いて、不活性ガス、例えば、窒素ガスを充満させて酸化を防止する。また、接合部(金属間接合部9を生成する部位)を低温加熱することによってより効果的に金属間接合を生成することが可能である。低温加熱は、加熱した不活性ガスをチャンバー内に充填したり、赤外線ランプで加熱したり、ニクロム線などのヒータで加熱する。
このように、導電性接合構造1は、電子部品3などに熱履歴を加えることなく、ランド状接続端子3aのSn―Agメッキ3acと、スパイラル状接触子2のAuメッキ3との間に金属間接合部9を生成させて安定的に接合することができる。なお、低温加熱雰囲気は、80〜120℃としたが、電子部品やデバイスへの熱履歴の影響が無い範囲であればこれに限定することはない。
FIG. 2 is an enlarged cross-sectional view for explaining the intermetallic joint, and shows an atmosphere in which the intermetallic joint is generated. As shown in FIG. 2, in order to form the conductive joint structure 1, the joint part (intermetallic joint part 9) of the electronic component 3 and the spring-like contactor (spiral contactor) 2 is placed in the chamber 11. Then, an inert gas, for example, nitrogen gas is filled to prevent oxidation. Moreover, it is possible to produce | generate an intermetallic junction more effectively by heating a junction part (site | part which produces | generates the intermetallic junction part 9) at low temperature. Low temperature heating is performed by filling the chamber with a heated inert gas, heating with an infrared lamp, or heating with a heater such as a nichrome wire.
As described above, the conductive bonding structure 1 has a metal between the Sn-Ag plating 3ac of the land-like connection terminal 3a and the Au plating 3 of the spiral contact 2 without applying a thermal history to the electronic component 3 or the like. It is possible to generate the inter-joint portion 9 and stably join. In addition, although the low temperature heating atmosphere was 80-120 degreeC, if it is a range without the influence of the heat history to an electronic component or a device, it will not be limited to this.
次に、バネ状接触子であるスパイラル状接触子の製造方法を簡単に説明する。
図3は、本発明に係るスパイラル状接触子の製造方法の工程断面図である。図3に示すように、スパイラル状接触子2は、渦巻状の中心に先端部(柱)2dを有する凸形のスパイラル状接触子である。なお、スパイラル状接触子2の形状は、接続端子と接触する部位がフラットな先端部を備えていれば良く、柱2dを備えるものに限定するものではない。
Next, a method for manufacturing a spiral contact which is a spring-like contact will be briefly described.
FIG. 3 is a process cross-sectional view of the method for manufacturing a spiral contact according to the present invention. As shown in FIG. 3, the spiral contact 2 is a convex spiral contact having a tip (column) 2d at the center of the spiral. Note that the shape of the spiral contact 2 is not limited to the one provided with the pillar 2d as long as the portion in contact with the connection terminal has a flat tip.
第1工程では、金属板4を用意し、この金属板4の表面に1つの凹部4aをスパイラル状接触子の先端の位置に来るように形成する。なお、金属板4はCu箔が好適であるので、以下、金属板4はCu箔4と記載する。Cu箔4の厚みは、箔状であり、例えば、0.08mmとしたが、これに限定されるものではない。
第2工程は、Cu箔4の表面にフォトレジスト5を貼付もしくは塗布し、その上方から3重巻きのスパイラル状接触子2のパターンを有するフォトマスク6を被せ、このフォトマスク6の上方から光を照射して露光する。これによって、柱2dが形成される。このフォトマスク6の形状は、スパイラル形状接触子2の部分を黒塗りにした模様になっている。また、白黒逆のパターンを用いた方法でも構わない。
In the first step, the metal plate 4 is prepared, and one concave portion 4a is formed on the surface of the metal plate 4 so as to come to the position of the tip of the spiral contact. Since the metal plate 4 is preferably a Cu foil, the metal plate 4 is hereinafter referred to as a Cu foil 4. The thickness of the Cu foil 4 is a foil shape, for example, 0.08 mm, but is not limited thereto.
In the second step, a photoresist 5 is affixed or applied to the surface of the Cu foil 4, and a photomask 6 having a pattern of the triple spiral contact 2 is covered from above, and light is applied from above the photomask 6. To expose. Thereby, the pillar 2d is formed. The shape of the photomask 6 is a pattern in which the spiral contact 2 is blackened. Further, a method using a reverse black and white pattern may be used.
第3工程は、フォトマスク6のパターンを形成するようにフォトレジスト5を現像する。
第4工程は、さらに上方からCu箔4の露出面4bに金属材7(7a、7b)を施し、3重巻きのスパイラル状接触子2を成形する。ここでの金属材7は、表層にCu材を施したニッケル合金、又は表層にCu材を施したニッケル合金メッキが好適である。なお、金属材は、例えば、ニッケルNi合金メッキを用いたが、これに限定されるものではない。
第5工程は、フォトレジスト5を除去する。
第6工程は、Cu箔4の裏面にフォトレジスト5を貼付もしくは塗布し、穴を開けるためのフォトマスク6´を被せ、このフォトマスク6´に光を照射して露光・現像する。
第7工程は、Cu箔4の裏面からCu箔4にエッチングで穴4cを開ける。
第8工程は、Cu箔4の裏面のフォトレジスト5を除去する。
In the third step, the photoresist 5 is developed so as to form a pattern of the photomask 6.
In the fourth step, the metal material 7 (7a, 7b) is further applied to the exposed surface 4b of the Cu foil 4 from above, and the triple wound spiral contact 2 is formed. The metal material 7 here is preferably a nickel alloy with a Cu material applied to the surface layer or a nickel alloy plating with a Cu material applied to the surface layer. In addition, although nickel nickel alloy plating was used for the metal material, for example, it is not limited to this.
In the fifth step, the photoresist 5 is removed.
In the sixth step, a photoresist 5 is pasted or applied on the back surface of the Cu foil 4, and a photomask 6 'for making a hole is covered, and this photomask 6' is irradiated with light to be exposed and developed.
In the seventh step, a hole 4c is formed in the Cu foil 4 from the back surface of the Cu foil 4 by etching.
In the eighth step, the photoresist 5 on the back surface of the Cu foil 4 is removed.
図4は、本発明に係る製造方法の工程断面図であり、図3に示す第8工程に続く工程を示している。図4に示すように、第9工程では、上下反転させたスパイラル状接触子2の渦巻きの中心を一方から凸形工具10で押し上げて凸形に変形させた状態でアニールフォーミングする。
詳細には、スパイラル状接触子2の下方に凸形工具10を配置し、スパイラル状接触子2を下方から凸形工具10で押し上げて凸形に変形させた状態でアニールフォーミングして成形を安定させ、すなわち、凸状に変形したスパイラル状接触子2が加熱及び焼鈍されて凸形状に成形される。このアニールフォーミングは、例えば、250℃で加熱し、焼きなまし処理を行い、内部応力を除去する。ここで加熱温度は250℃としたが、250℃前後を含むものとし、さらにこれに限定されるものではない。
第10工程は、アニールフォーミングが完了するとともに、凸形工具10を取り外した状態である。
第11工程は、スパイラル状接触子2を、表面に導電性のランド8aを有する実装基板8に位置決め固定する。この後、Cu箔4をエッチング除去する。
FIG. 4 is a process sectional view of the manufacturing method according to the present invention, and shows a process following the eighth process shown in FIG. As shown in FIG. 4, in the ninth step, annealing forming is performed in a state where the center of the spiral of the spiral contact 2 turned upside down is pushed up from one side by the convex tool 10 and deformed into a convex shape.
Specifically, the convex tool 10 is arranged below the spiral contact 2, and the forming is stabilized by annealing and forming the spiral contact 2 with the convex tool 10 pushed up from below and deformed into a convex shape. That is, the spiral contact 2 deformed into a convex shape is heated and annealed to be formed into a convex shape. In this annealing forming, for example, heating is performed at 250 ° C., annealing is performed, and internal stress is removed. Although the heating temperature is 250 ° C. here, it is assumed to include around 250 ° C., and is not limited to this.
The tenth step is a state in which the annealing tooling is completed and the convex tool 10 is removed.
In the eleventh step, the spiral contact 2 is positioned and fixed on the mounting substrate 8 having the conductive land 8a on the surface. Thereafter, the Cu foil 4 is removed by etching.
<その他の実施形態>
以下、本発明に係る導電性接合構造のその他の実施形態を図面を参照しながら詳細に説明する。金属間接合部の生成方法は第1の実施形態と同様であり、生成方法の説明は省き、相違する具体的な構造を説明する。
図5は、本発明のその他の実施形態を説明するための導電性接合構造を示し、(a)は板バネ形状、(b)はコイルバネ形状の接触子を示している。
図5(a)に示すように、導電性接合構造11において、バネ状接触子12は板バネ形状である。このように、ランド状接続端子31aと板バネ形状のバネ状接触子12とを対面させて重ね合わせることによって、接触面に金属間接合部19を生成させて安定的に接合することができる。なお、バネ状接触子12はランド状接続端子33aに半田付け部14などを設けることによって接合される。ランド状接続端子31aと接触する板バネ状のバネ状接触子12の接合面にはSn-Agメッキ31acを施している。
<Other embodiments>
Hereinafter, other embodiments of the conductive joint structure according to the present invention will be described in detail with reference to the drawings. The method for generating the intermetallic joint is the same as in the first embodiment, and the description of the generation method is omitted, and a different specific structure will be described.
FIG. 5 shows a conductive joint structure for explaining another embodiment of the present invention, in which (a) shows a leaf spring shape, and (b) shows a coil spring shape contact.
As shown in FIG. 5A, in the conductive joint structure 11, the spring-like contact 12 has a leaf spring shape. Thus, the land-like connection terminal 31a and the leaf spring-shaped spring-like contactor 12 face each other and overlap each other, whereby the intermetallic joint 19 can be generated on the contact surface and stably joined. The spring-like contact 12 is joined by providing a soldering portion 14 or the like on the land-like connection terminal 33a. Sn-Ag plating 31ac is applied to the joint surface of the leaf-like spring-like contactor 12 that contacts the land-like connection terminal 31a.
また、図5(b)に示すように、導電性接合構造21において、バネ状接触子22はコイルバネ形状である。このように、ランド状接続端子41aとコイルバネ形状のバネ状接触子22とを対面させて重ね合わせることによって、接触面に金属間接合部29を生成させて安定的に接合することができる。なお、バネ状接触子22はランド状接続端子51aに半田付け部24などを設けることによって接合される。ランド状接続端子41aと接触するコイルバネ状のバネ状接触子22の接合面にはSn-Agメッキ41aaを施している。
なお、半田接合(半田付け部)14、24は、レーザスポット溶接などであっても、電気的接合が可能であればその他の接合方法によっても、本発明に用いた金属接合によっても構わない。
Moreover, as shown in FIG.5 (b), in the electroconductive joining structure 21, the spring-like contactor 22 is a coil spring shape. As described above, the land-like connection terminal 41a and the coil spring-shaped spring-like contactor 22 face each other and overlap each other, whereby the intermetallic joint 29 can be generated on the contact surface and stably joined. The spring-like contact 22 is joined by providing a soldering portion 24 or the like on the land-like connection terminal 51a. Sn-Ag plating 41aa is applied to the joint surface of the coil spring-like spring contact 22 that contacts the land connection terminal 41a.
Note that the solder joints (soldering portions) 14 and 24 may be laser spot welding or the like, as long as electrical joining is possible, or any other joining method or metal joining used in the present invention.
また、バネ状接触子2、12、22を形成するコア材はニッケル(Ni)基材であり、表面にはAuメッキが施されているが、これに限定されるものではない。ここで金属間接合を簡単に説明する。金属間接合は、接合部の金属原子が互いに拡散して拡散接合が発生して起きる。この拡散接合とは、JISの定義では、「母材を密着させ、母材の融点以下の温度条件で、塑性変形をできるだけ生じさせない程度に加圧して、接合面間に生じる原子の拡散を利用して接合する方法」となっている。
このような拡散接合の特徴は、材料的に溶融溶接が極めて困難とされている金属や、異種金属の接合ができること、面接合ができることである。
The core material forming the spring-like contacts 2, 12, and 22 is a nickel (Ni) base material, and the surface thereof is plated with Au. However, the present invention is not limited to this. Here, the metal-to-metal bonding will be briefly described. The metal-to-metal bonding occurs when metal atoms in the bonding part diffuse to each other to generate diffusion bonding. Diffusion bonding is defined by JIS as follows: “Diffusion of atoms generated between bonding surfaces is made by pressing the base material in close contact and pressurizing the base material to the extent that plastic deformation does not occur as much as possible. To join ".
The feature of such diffusion bonding is that it is possible to bond metals and dissimilar metals that are extremely difficult to melt and weld to each other, and to perform surface bonding.
すなわち、接合すべき金属の接合面同士を著しい変形を伴わずに加圧、加熱し、接合面を横切って接合界面の原子を拡散させて接合する。この際、表面の凹凸や、酸化膜や、汚染層が接合阻害要因となるため、加圧による塑性変形量、加熱による拡散速度および表面処理の厳しい管理が求められるが、接合温度や接合時間どの条件コントロールによって接合材料間の相互拡散を抑制して精密な接合ができる。
また、100℃以下の低温、真空中や不活性ガス中ではさらに金属接合が起こり易くなる。
That is, the bonding surfaces of the metals to be bonded are pressed and heated without significant deformation, and the atoms at the bonding interface are diffused across the bonding surface and bonded. At this time, since surface irregularities, oxide films, and contaminated layers are factors that hinder bonding, strict control of the amount of plastic deformation by pressurization, diffusion rate by heating, and surface treatment is required. Precise bonding is possible by suppressing interdiffusion between bonding materials by condition control.
Further, metal bonding is more likely to occur at a low temperature of 100 ° C. or lower, in a vacuum, or in an inert gas.
以上、好ましい実施の形態を説明したが、本発明は前記実施の形態に限定されるものではなく、本発明の要旨を逸脱することの無い範囲内において適宜変更が可能なものである。例えば、バネ状接触子は、スパイラル状接触子の中心先端に突起(柱)を有するものとして説明したが、突起が無くてもほぼ平面状であればそれでも構わない。また、バネ状接触子は、板バネ形状とコイルバネ形状として説明したが、これに限るものではなく、その他バネ状接触子であれば構わないし、薄板状金属板に金属間接合部を備えた接点を構成するものであっても構わない。 The preferred embodiments have been described above. However, the present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the gist of the present invention. For example, the spring-like contactor has been described as having a protrusion (column) at the center tip of the spiral contactor. In addition, the spring-like contactor has been described as a plate spring shape and a coil spring shape, but the present invention is not limited to this, and any other spring-like contactor may be used, and a contact provided with an intermetallic joint on a thin metal plate. You may comprise.
ランド状接続端子とバネ状接触子を電気的に接合した接触面を鏡面状平面にすることなく金属間接合部を生成させて安定的に電気的な接続状態を形成する導電性接合構造であって、電子部品間や実装基板間などの電子的基板間を接続して高集積デバイスを形成するためのインターコネクトに適用される。 This is a conductive joint structure in which an intermetallic joint is generated and a stable electrical connection state is formed without forming a contact surface obtained by electrically joining the land-like connection terminal and the spring-like contactor as a mirror-like plane. Thus, the present invention is applied to an interconnect for forming a highly integrated device by connecting electronic boards such as between electronic components and between mounting boards.
1、11、21 導電性接合構造
2、12、22 スパイラル状接触子、バネ状接触子
2d 先端部
3 電子部品
3a ランド状接続端子
3aa Cu
3ab Auメッキ
3ac Sn-Agメッキ
3d ランド
4 Cu
4a 凹、窪み
4b Cuの露出面(上面)
4c 穴
5 フォトレジスト
6、6´ フォトマスク
7 金属メッキ、金属材
7a Niメッキ、金属材
7b Auメッキ、金属材
8 実装基板
9、19、29 金属間接合部
10 凸形工具
11 チャンバー
1, 11, 21 Conductive bonding structure 2, 12, 22 Spiral contact, spring contact 2d Tip 3 Electronic component 3a Land connection terminal 3aa Cu
3ab Au plating 3ac Sn-Ag plating 3d land 4 Cu
4a Concave, hollow 4b Cu exposed surface (upper surface)
4c Hole 5 Photoresist 6, 6 'Photomask 7 Metal plating, metal material 7a Ni plating, metal material 7b Au plating, metal material 8 Mounting substrate 9, 19, 29 Intermetallic joint 10 Convex tool 11 Chamber
Claims (11)
前記ランド状接続端子は、前記バネ状接触子との接触面にSn―Agメッキが施され、
前記ランド状接続端子と前記バネ状接触子とを少なくとも一対設け、前記ランド状接続端子と前記バネ状接触子とを対面させて重ね合わせることによって、前記接触面に金属間接合部が生成されることを特徴とする導電性接合構造。 A land-like connection terminal, and a spring-like contactor that applies an urging force to the land-like connection terminal to make electrical contact with the land-like connection terminal,
The land-shaped connection terminal is Sn-Ag plated on the contact surface with the spring-shaped contact,
By providing at least one pair of the land-like connection terminal and the spring-like contact, and facing and overlapping the land-like connection terminal and the spring-like contact, an intermetallic joint is generated on the contact surface. A conductive joint structure characterized by the above.
The method for manufacturing a conductive bonding structure according to claim 7, wherein the low-temperature heating atmosphere is 80 to 120 ° C.
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Cited By (1)
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