JP2015008191A - Method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing man hours when an annular reinforcement part of a semiconductor wafer is removed, and of reducing cracks and falls of broken pieces.SOLUTION: Provided is a method of manufacturing a semiconductor device of dividing a semiconductor wafer into a plurality of semiconductor devices. The semiconductor wafer has: a recessed part provided on a rear face of the semiconductor wafer; an annular reinforcement part provided at an outer peripheral part; a semiconductor element region provided at the recessed part and in which a plurality of semiconductor devices are formed; and an excessive region consisting of the recessed part other than the semiconductor element region. The method of manufacturing a semiconductor device includes: an attachment step 101 for attaching a dicing frame onto a rear face of the semiconductor wafer via an adhesive tape; a cutting step 102 of placing on a stage having a convex part that is smaller than the recessed part on the rear face of the semiconductor wafer attached to the dicing frame, and individualizing the semiconductor wafer into a plurality of semiconductor devices by cutting a semiconductor element formation region from a front surface side; an adhesive force reduction step 103 for reducing an adhesive force of the adhesive tape; a peeling step 104 of peeling off the annular reinforcement part from the adhesive tape; and a removal step 105 of removing the annular reinforcement part and the excessive region.

Description

  The present invention relates to a method for manufacturing a semiconductor device using a semiconductor wafer having a circular recess on a back surface.

  In recent years, IGBTs (Insulated Gate Bipolar Transistors) are being thinned due to the need for high performance and low cost. For this reason, for example, it is necessary to reduce the thickness of the semiconductor wafer to a thickness of about 50 μm to 100 μm or less.

In thinning a semiconductor wafer, after the element structure is formed on the surface of the semiconductor wafer, the back surface of the semiconductor wafer is ground until a predetermined thickness is obtained.
However, since the mechanical strength of the thinned semiconductor wafer decreases, cracks and chips are easily generated, and handling such as conveyance becomes difficult.

  Therefore, after forming the element structure on the surface of the semiconductor wafer, the element structure part in the central part of the semiconductor wafer is ground from the back side of the semiconductor wafer, and the outer peripheral part of the semiconductor wafer is left with a predetermined width as a reinforcing part. As a result, the mechanical strength of the semiconductor wafer is improved, and cracking and chipping of the semiconductor wafer can be reduced.

Then, after removing the reinforcing portion of the semiconductor wafer, the semiconductor wafer is diced for each element structure and cut into individual semiconductor devices.
FIG. 18 shows a semiconductor wafer in which the central portion of the semiconductor wafer is thinned and the outer peripheral portion is a reinforcing portion. FIG. 18A is a plan view of the semiconductor wafer, and FIG. 18B is a cross-sectional view taken along line AA ′ of FIG.

18B, on the back surface of the semiconductor wafer 1, an annular reinforcing portion 2 having a thick wafer thickness is formed on the outer peripheral portion, and a back recess portion 3 having a small wafer thickness is formed on the central portion.
As shown in FIG. 18A, the back surface recess 3 has an element formation region 6 in which the semiconductor device 4 is formed, and the element formation region 6 is cut into pieces into the semiconductor device 4 by cutting the element formation region 6. A chip dividing line 7 is formed for this purpose. Further, the region other than the element formation region 6 of the back surface recess 3 is a surplus region 5.

As a method of removing the annular reinforcing portion formed on the outer periphery of the semiconductor wafer, a semiconductor wafer having a circular concave portion on the back surface is attached to the dicing frame via an ultraviolet curable adhesive tape and placed on the chuck table. After cutting the outer annular reinforcing part, the adhesive strength of the adhesive tape of the part attached to the annular reinforcing part of the adhesive tape is weakened, and the nail is inserted into the boundary between the adhesive tape and the annular reinforcing part to remove the annular reinforcing part. . (For example, Patent Document 1)
The wafer wafer device area is cut by affixing a semiconductor wafer with a backside recess to the dicing frame via a UV curable adhesive tape and placing it on a chuck stage that fits into the backside recess and cutting along the wafer street. The annular reinforcing portion is maintained in an annular state, and the annular reinforcing portion is removed by weakening the adhesive force of the adhesive tape in the portion attached to the annular reinforcing portion of the adhesive tape. (For example, Patent Document 2)
In addition, a semiconductor wafer having a back surface concave portion is attached to the dicing frame via an ultraviolet curable adhesive tape, and dicing is performed so that the device region of the wafer is separated into pieces and the annular reinforcing portion is not separated into pieces. The adhesive strength of the adhesive tape of the annular reinforcement portion is weakened and the dicing frame is placed on the stage that fits into the recess on the back surface, and the stage is moved up and down to remove the annular reinforcement portion from the adhesive tape. (For example, Patent Document 3)

JP 2011-61137 A JP 2010-62375 A JP 2011-210858 A

However, when the annular reinforcing portion on the outer periphery of the semiconductor wafer is cut and removed in advance, man-hours for cutting the annular reinforcing portion are required.
Further, when removing the annular reinforcing portion by inserting a nail or the like at the boundary between the semiconductor wafer and the adhesive tape in the removal step, the nail may touch the side surface of the annular reinforcing portion on the outer periphery of the semiconductor wafer. There is a possibility of chipping due to contact with the element region. Furthermore, there is a concern that debris may fall from a location where chipping occurs when lifting the annular reinforcing portion.

  The present invention provides a method for manufacturing a semiconductor device that reduces the number of steps for removing an annular reinforcing portion on the outer periphery of a semiconductor wafer and reduces chipping and debris falling.

  From a recess in which the thickness of the central portion of the backside of the semiconductor wafer is made thinner than that of the outer periphery, an annular reinforcing portion in the outer periphery, a plurality of semiconductor devices formed in the recess, and a recess other than the semiconductor element region In a manufacturing method of a semiconductor device in which a semiconductor wafer having a surplus region is divided into a plurality of semiconductor devices, a mounting step of mounting the semiconductor wafer on a dicing frame via an adhesive tape on the back surface of the semiconductor wafer, and mounting on the dicing frame A cutting step of placing the semiconductor wafer on a stage having a convex portion smaller than the concave portion on the back surface of the semiconductor wafer, cutting the semiconductor element forming region from the front surface side, and dividing the semiconductor wafer into pieces. Adhesive strength reduction process to reduce the adhesive strength of the adhesive tape, peeling process to peel the annular reinforcing part from the adhesive tape, and removal to remove the excess area To provide a method of manufacturing a semiconductor device which comprises an extent.

  The present invention provides a method for manufacturing a semiconductor device that reduces the man-hour when removing the annular reinforcing portion of the semiconductor wafer, and reduces chipping and falling of fragments.

It is a flowchart which shows embodiment of this invention. It is sectional drawing which shows the dicing frame mounting | wearing process of embodiment of this invention. FIG. 4 is a plan view and a B-B ′ sectional view showing a semiconductor wafer mounted on a dicing frame according to an embodiment of the present invention. It is sectional drawing which shows the cutting process of embodiment of this invention. It is a top view which shows the semiconductor wafer after the cutting process of embodiment of this invention. It is sectional drawing which shows the adhesive force fall process of embodiment of this invention. It is sectional drawing which shows the peeling process of embodiment of this invention. It is a perspective view which shows the cyclic | annular peeling jig | tool of embodiment of this invention. It is the top view which shows the cyclic | annular peeling jig | tool of this invention embodiment, and C-C 'sectional drawing. It is sectional drawing which shows the removal process of embodiment of this invention. It is a perspective view which shows the removal jig | tool of embodiment of this invention. It is sectional drawing which shows the expansion process of embodiment of this invention. It is sectional drawing which shows the expansion process of embodiment of this invention. It is sectional drawing which shows the expansion process of embodiment of this invention. It is sectional drawing which shows the expansion process of embodiment of this invention. It is sectional drawing which shows the semiconductor device after the embodiment expansion process of this invention. It is sectional drawing which shows the modification of the peeling process of the embodiment of this invention, and a removal process. It is the top view and A-A 'cross section figure of a semiconductor wafer.

Exemplary embodiments of a method for manufacturing a semiconductor device according to the present invention will be described below in detail with reference to the accompanying drawings.
(Embodiment)
FIG. 18 shows a semiconductor wafer 1 in which the central portion is thinned and the outer peripheral portion is an annular reinforcing portion 2. FIG. 18A is a plan view of the semiconductor wafer 1, and FIG. 18B is a cross-sectional view taken along the line AA ′ of FIG.

18B, on the back surface of the semiconductor wafer 1, an annular reinforcing portion 2 having a thick wafer thickness is formed on the outer peripheral portion, and a back recess portion 3 having a small wafer thickness is formed on the central portion.
As shown in FIG. 18A, the back surface recess 3 has an element formation region 6 in which the semiconductor device 4 is formed. The element formation region 6 is cut into pieces into the semiconductor device 4 by cutting the element formation region 6. Chip division lines 7 are formed for this purpose. Further, the region other than the element formation region 6 of the back surface recess 3 is a surplus region 5.

The thickness of the annular reinforcing portion 2 is, for example, 100 to 725 μm, and the thickness of the back surface concave portion 3 is, for example, 50 to 400 μm.
The back surface recess 3 is formed by grinding to a predetermined thickness from the back surface of the semiconductor wafer 1, and the annular reinforcing portion 2 is ground from the outer periphery of the semiconductor wafer 1 to a width of about 1.0 to 5.0 mm, for example. Do not do.

  FIG. 1 shows a flowchart of the present invention. The semiconductor wafer 1 shown in FIG. 18 in which the back surface recess 3 and the annular reinforcing portion 2 are formed by grinding the back surface is applied to the dicing frame 14 via the adhesive tape 13 as shown in FIG. Installed. The semiconductor wafer 1 mounted on the dicing frame 14 is cut along a chip dividing line 7 that separates the element formation region 6 of the semiconductor wafer 1 into the semiconductor device 4 as shown in FIG. The element formation region 6 is separated into semiconductor devices 4. The adhesive tape adhesive strength reduction step 103 reduces the adhesive strength of the adhesive tape 13 on the entire back surface of the semiconductor wafer 1 that has been cut as shown in FIG. 6 to be described later, and in the peeling step 104, as shown in FIG. The annular reinforcing portion 2 of the semiconductor wafer 1 is peeled off from the tape 13. Further, in the removing step 105, the annular reinforcing portion 2 and the surplus region 5 are removed as shown in FIG. In addition, the separated semiconductor devices 4 can increase the interval between adjacent semiconductor devices 4 as shown in FIG.

FIG. 2 shows a cross-sectional view of the dicing frame mounting step 101 of the present invention.
As shown in FIG. 2A, the rubber sheet 42 is placed with the back surface recess 3 of the semiconductor wafer 1 on which the adhesive tape 13 is attached in the vacuum chamber 40 having the upper chamber 43 and the lower chamber 44. It is mounted on a countersink stage 41 having a shape in which only the outer peripheral portion of the semiconductor wafer 1 placed thereon is in contact. A dicing frame 14 with an adhesive tape 13 attached is placed on the top of the semiconductor wafer 1 placed, and the upper chamber 43 and the lower chamber 33 are evacuated 45. At this time, by using the counter-rotating stage 41, the semiconductor wafer 1 can be held without contacting the element forming region 6, and the surface of the semiconductor wafer 1 can be prevented from being damaged.

Next, as shown in FIG. 2B, the lower chamber 44 is opened to the atmosphere 46, and the rubber sheet 42 is pushed up to the upper chamber 43 side, so that the adhesive tape 13 and the annular reinforcing portion 2 of the semiconductor wafer 1 are brought into close contact with each other.
Next, as shown in FIG. 2C, the upper chamber 43 is opened to the atmosphere 46, and the adhesive tape 13 is brought into close contact with the back surface recess 3 of the semiconductor wafer 1. The adhesive tape 13 is attached to the back surface of the semiconductor wafer 1 by the differential pressure between the upper chamber 43 and the lower chamber 44.

  FIG. 3 shows a state in which the semiconductor wafer 1 is mounted on the dicing frame 14 via the adhesive tape 13 in the dicing frame mounting step 101 of the present invention. 3A is a plan view, and FIG. 3B is a B-B ′ cross-sectional view.

  Since the adhesive tape 13 is affixed along the back surface recess 3, the cutting water used in the cutting process of FIG. 4 to be described later enters between the semiconductor wafer 1 and the adhesive tape 13 and peels off the adhesive tape 13. It is possible to suppress chipping that occurs because the fixing of the semiconductor wafer 1 becomes unstable due to peeling of the adhesive tape 13. At this time, it is desirable that the adhesive tape 13 is coated with an ultraviolet curable adhesive capable of reducing the adhesive force later.

  FIG. 4 shows a cross-sectional view of the cutting process 102 of the present invention. The semiconductor wafer 1 mounted on the dicing frame 14 in the dicing frame mounting step 101 is placed on a convex stage 11 including a porous chuck (not shown) having a convex shape that fits into the back surface recess 3 on the back surface of the semiconductor wafer. Fixed by vacuum suction.

  The semiconductor wafer 1 placed on the convex stage 11 is cut along the chip dividing line 7 by the cutting blade 20. At this time, the semiconductor wafer 1 is in a state where the thin back surface recess 3 is cut and the annular reinforcing portion 2 is connected to the surplus region 5.

  Therefore, since the annular reinforcing portion 2 and the surplus region 5 are connected to one, the annular reinforcing portion 2 and the surplus region 5 can be removed with a small number of man-hours in the removing step 105. Note that laser light may be used for cutting.

  FIG. 5 shows the semiconductor wafer 1 after the cutting step 102 of the present invention. The semiconductor wafer 1 after the cutting step 102 is divided into a semiconductor device 4 in which the element forming regions 6 are separated into pieces in the cutting step 102, an annular reinforcing portion 2, and a surplus region 5.

  FIG. 6 shows a cross-sectional view of the adhesive strength reducing step 103. An ultraviolet ray generation lamp 21 is used for the adhesive tape 13 coated with an ultraviolet curable adhesive to irradiate ultraviolet rays from the back surface of the semiconductor wafer 1 to reduce the adhesive force of the surface where the semiconductor wafer 1 and the adhesive tape 13 are in contact. .

  By irradiating the entire surface of the semiconductor wafer 1 with ultraviolet rays to reduce the adhesive force, the annular reinforcing portion 2 and the surplus region 5 of the semiconductor wafer 1 are easily removed, and after the annular reinforcing portion 2 and the surplus region 5 are removed, the individual pieces are removed. When picking up the converted semiconductor device 4, it is not necessary to irradiate ultraviolet rays again, and the number of processes can be reduced.

  FIG. 7 shows a cross-sectional view of the peeling process 104. FIG. 7A shows a cross-sectional view of a state in which the semiconductor wafer 1 attached via the adhesive tape 13 is placed and fixed to the dicing frame 14 cut in the cutting step 102, and FIG. ) Shows a cross-sectional view of the state where the annular reinforcing portion 2 of the semiconductor wafer 1 is peeled from the adhesive tape 13 using the annular peeling jig 31.

  As shown in FIG. 7A, the semiconductor wafer 1 attached to the dicing frame 14 via the adhesive tape 13 fits with the back surface recess 3 of the semiconductor wafer 1 or the element formation region 6 of the semiconductor wafer is mounted. The dicing frame 14 is mounted on a holding stage 12 having a size that can be placed, and the dicing frame 14 is fixed by a dicing frame clamp jig 15.

Further, the holding stage 12 has a porous chuck (not shown), and the back surface recess 3 of the semiconductor wafer 1 is fixed by suction.
Further, as shown in FIG. 7B, an annular peeling jig 31 having a diameter larger than the outer diameter of the semiconductor wafer 1 and smaller than the inner diameter of the dicing frame 14 is placed between the center of the semiconductor wafer 1 and the center of the annular peeling jig 31. The same is lowered from the surface side of the semiconductor wafer 1 and pushed down to the adhesive tape 13. The pressure-sensitive adhesive tape 13 is peeled from the ring-shaped reinforcing portion 2 of the semiconductor wafer 1 by lowering the ring-shaped peeling jig 31 and pushing it down to the pressure-sensitive adhesive tape 13.

  When the holding stage 12 and the dicing frame 14 are placed horizontally, the annular peeling jig 31 is lowered from the direction perpendicular to the holding stage 12 to push down the adhesive tape 13.

At this time, the surplus area 5 placed on the holding stage 12 is not peeled off from the adhesive tape 13 and is in contact with the adhesive tape 13.
Therefore, even if the annular reinforcing portion 2 is peeled off from the adhesive tape 13, the surplus region 5 connected to the annular reinforcing portion 2 is not peeled off from the adhesive tape 13, so that the surplus region 5 contacts the element forming region 6. And the occurrence of chipping can be prevented.

  FIG. 8 shows the shape of the annular peeling jig 31. FIG. 8A shows an annular peeling jig 31 in which a plurality of pins 51 are annularly attached to a circular ring-shaped plate 52. The plurality of pins 51 arranged in a ring shape are lowered from the upper surface of the adhesive tape 13, and the annular reinforcing portion 2 is peeled from the adhesive tape 13. By arranging the pins 51 at equal intervals, the annular reinforcing portion 2 can be peeled off without being inclined. In addition, the space | interval of the pin 51 is so narrow that the force which pushes down the adhesive tape 13 below can be disperse | distributed, and the stress concerning the cyclic | annular reinforcement part 2 can be relieve | moderated. By relieving the stress, it is possible to prevent the excess region 5 and the element formation region 6 of the semiconductor wafer 1 from being damaged.

The shape of the pin 51 is desirably a columnar shape in order to prevent the adhesive tape 13 from being broken due to the concentration of the pressing force of the adhesive tape 13 at the corners of the pin.
FIG. 8B shows an annular exfoliation treatment in which a circular ring plate 52 is further attached to a plurality of pins 51 in a circular shape on a circular ring plate 52, and the surface of the adhesive tape 13 is lowered into a circular ring shape. Tool 31. By making the surface in contact with the adhesive tape 13 into a circular ring shape, it is possible to disperse the force of pushing down the adhesive tape 13 when the annular peeling jig 31 is lowered, and the stress applied to the annular reinforcing portion 2 Can be relaxed.

  The annular peeling jig 31 shown in FIG. 8C has a cylindrical shape, and the surface to be lowered to the surface of the adhesive tape 13 has a circular ring shape as in FIG. For this reason, when the annular peeling jig 31 is lowered, the force for pressing the adhesive tape 13 downward can be dispersed, and the stress applied to the annular reinforcing portion 2 can be relaxed.

  As shown in FIGS. 8B and 8C, the stress applied to the annular reinforcing portion 2 can be reduced by dispersing the force that pushes the adhesive tape 13 downward, and the annular reinforcing portion 2 is peeled off without being inclined. Since the damage due to the contact between the element formation region 6 and the surplus region 5 of the semiconductor wafer 1 can be prevented, the shape of the annular peeling jig 31 is as shown in FIG. A circular ring shape as shown in FIG.

  The material of the annular peeling jig 31 is preferably metal or resin. In the case of FIGS. 8B and 8C, the surface in contact with the adhesive tape 13 may be the same as or similar to the outer shape of the semiconductor wafer 1.

FIG. 9 shows the shape of the end of the annular peeling jig 31 shown in FIG. Fig.9 (a) shows the external shape of the cyclic | annular peeling jig | tool 31, and CC 'sectional drawing is shown to FIG.9 (b)-(d).
The surface in contact with the adhesive tape 13 has a square shape as shown in FIG. 9 (b), a shape with chamfered corner portions as shown in FIG. 9 (c), and a corner portion with a rounded corner shape as shown in FIG. 9 (d). It is good also as a shape. As shown in FIG. 9C and FIG. 9D, the adhesive tape 13 can be prevented from being broken when the annular peeling jig 31 is lowered and pushed down by using a chamfered shape or an R shape.

  The end portions shown in FIGS. 9B to 9D have the shapes of the pin 51 on the surface in contact with the adhesive tape 13 shown in FIGS. 8A and 8B, and the circular ring-shaped plate 52. Even if it is used for the shape, the same effect can be obtained.

  FIG. 10 is a sectional view of the removing step 105, and FIG. 11 is a perspective view of the removing jig 32. As shown in FIG. As shown in FIG. 11, the removal jig 32 has a cylindrical shape and includes a suction portion 33. The outer diameter of the adsorbing portion 33 is preferably equal to or smaller than the outer diameter of the annular reinforcing portion 2 in order to adsorb the annular reinforcing portion 2 of the semiconductor wafer 1. The inner diameter of the suction portion 33 is preferably larger than the element formation region 6.

  As shown in FIG. 10A, after peeling the adhesive tape 13 from the annular reinforcing portion 2, the removal jig 32 is lowered while the annular peeling jig 31 is lowered, and the suction portion 33 of the removal jig 32 is used. The annular reinforcing portion 2 is adsorbed. At this time, the holding stage 12 sucks the back surface of the element forming region 6 by the holding stage 12.

  As shown in FIG. 10B, the surplus region 5 of the semiconductor wafer 1 is lifted and removed by raising the removal jig 32. The annular reinforcing portion 2 is peeled off from the adhesive tape 13 by an annular peeling jig 31, and the surplus region 5 is irradiated with ultraviolet rays by an ultraviolet ray generating lamp 21 as shown in FIG. Since it is lowered, the annular reinforcing portion 2 and the excess region 5 can be easily removed.

  Further, since the removal jig 32 is adsorbed by the adsorbing portion 33 and removes the annular reinforcing portion 2 and the surplus region 5, the surplus region 5 of the semiconductor wafer 1 and the element forming region 6 can be removed without contact. .

  Since the surplus region 5 can be removed without being brought into contact with the element forming region 6, chipping due to contact between the surplus region 5 and the element region 6, dropping of fragments thereof, and dropping of particles can be suppressed.

  FIG. 12 shows a cross-sectional view of the expansion process 106. FIG. 12 shows that after removing the annular reinforcing region 2 and the surplus region 5 in the removing step 105, the vacuum suction of the holding stage 12 is released, and the holding stage 12 is pressed with the annular peeling jig 31 pressed against the adhesive tape 13. For example, the distance between the semiconductor devices 4 in the element forming region 6 separated in the cutting step 102 is increased by raising the height by about 5 to 30 mm.

  By expanding the space between the semiconductor devices 4 and spreading them at a fixed interval, when the semiconductor device 4 is removed from the adhesive tape 13, contact of the semiconductor device 4 can be suppressed and chipping of the semiconductor device 4 can be prevented.

  13 and 14 are sectional views of the expansion process 106 using the grip ring. As shown in FIG. 13, when expanding the interval between the semiconductor devices 4, the adhesive tape 13 may be gripped using the grip rings 22 a and 22 b in a state where the annular peeling jig 31 is pressed against the adhesive tape 13. . The grip ring 22 a rises together with the holding stage 12 and is fitted into the grip ring 22 b fixed to the upper surface of the adhesive tape 13. At this time, as shown in FIG. 14, the grip ring 22 b may be lowered from the upper surface of the adhesive tape 13. By extending the distance between the semiconductor devices 4 using the grip ring, the state in which the distance between the semiconductor devices 4 is expanded can be maintained.

  Also, the annular peeling jig 31 is not used as shown in FIGS. 12 to 14, and the holding stage 12 is raised by 5 to 50 mm as shown in the sectional view of the expansion process 106 shown in FIG. You can widen the interval. By expanding the space between the semiconductor devices 4 and spreading them at a fixed interval, when the semiconductor device 4 is removed from the adhesive tape 13, the contact of the semiconductor device 4 can be suppressed and chipping of the semiconductor device 4 can be prevented. At this time, the grip rings 22a and 22b may be used as in FIGS.

  FIG. 16 shows a state in which the adhesive tape 13 on the outer periphery of the grip rings 22 a and 22 b is cut and separated from the dicing frame 14. By separating from the dicing frame 14, the gap between the semiconductor devices 4 can be held with the grip rings 22a and 22b widened.

The adjacent semiconductor devices 4 are removed from the adhesive tape 13 using a suction jig 34 such as vacuum tweezers or suction collet. The semiconductor device 4 removed from the adhesive tape 13 is stored in a chip tray or a reel of a taping device, or transferred to a chip bonding device such as a die bonding device, and subjected to predetermined processing.
(Modification of the embodiment)
FIG. 17 is a cross-sectional view of a modification of the embodiment of the present invention. 17A shows a state in which the removal jig 32 is adsorbed to the annular reinforcing portion 2 before the peeling step 104, and FIG. 17B shows an annular state in which the removal jig 32 is adsorbed to the annular reinforcing portion 2. The state which peeled the adhesive tape 13 from the cyclic | annular reinforcement part 2 using the peeling jig | tool 32 is shown.

  In the embodiment of the present invention, the annular peeling jig 31 is pushed from the upper surface of the semiconductor wafer 1 toward the adhesive tape 13 in the peeling step 104, and the annular reinforcing portion 2 and the adhesive tape 13 are peeled off. Although the removal jig 32 provided with 33 is adsorbed to the annular reinforcing portion 2, as shown in FIG. 17A, the removal jig 32 is adsorbed to the annular reinforcing portion 2 before the peeling step 104. As shown in FIG. 17B, the same effect can be obtained even if the annular peeling jig 31 is pushed from the upper surface of the semiconductor wafer 1 toward the adhesive tape 13 and the annular reinforcing portion 2 and the adhesive tape 13 are peeled off. .

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Annular reinforcement part 3 Back surface recessed part 4 Semiconductor device 5 Surplus area 6 Element formation area 7 Chip dividing line 11 Convex stage 12 Holding stage 13 Adhesive tape 14 Dicing frame 15 Dicing frame clamp jig 20 Cutting blade 21 Ultraviolet ray generation lamp 22a, 22b Grip ring 31 Annular peeling jig 32 Removal jig 33 Adsorption part 34 Adsorption jig 40 Vacuum chamber 41 Counter feed stage 42 Rubber sheet 43 Upper chamber 44 Lower chamber 45 Vacuum drawing 46 Atmospheric release 51 Pin 52 Ring-shaped plate 101 Dicing frame mounting process 102 Cutting process 103 Adhesive tape adhesive power reduction process 104 Peeling process 105 Removal process 106 Expansion process

Claims (6)

A concave portion formed by making the thickness of the central portion of the back surface of the semiconductor wafer thinner than the outer peripheral end portion;
An annular reinforcing portion formed on the outer periphery of the concave portion, and a plurality of semiconductor element regions defined by dividing lines in the concave portion,
A surplus region consisting of the recesses excluding the plurality of semiconductor element regions;
In a method of manufacturing a semiconductor device for dividing the semiconductor wafer having
A mounting step of mounting a dicing frame on the back surface of the semiconductor wafer via an adhesive tape;
Placing the back surface of the semiconductor wafer mounted on the dicing frame on a stage having a convex portion smaller than the concave portion;
A cutting step of cutting the plurality of semiconductor element regions from the surface side of the semiconductor wafer along the dividing line to separate the plurality of semiconductor element regions;
An adhesive strength reduction step of reducing the adhesive strength of the adhesive tape from the back side of the semiconductor wafer;
A peeling step of placing the back surface of the semiconductor wafer on a holding stage smaller than the recess and larger than the plurality of semiconductor element regions, and peeling the annular reinforcing portion from the adhesive tape;
A removal step of removing the annular reinforcing portion and the excess region;
A method for manufacturing a semiconductor device, comprising:   The method for manufacturing a semiconductor device according to claim 1, further comprising an expansion step of expanding the pressure-sensitive adhesive tape and expanding a gap between the semiconductor element regions separated in the cutting step after the removing step.   In the peeling step, an annular peeling jig is lowered from the surface side of the semiconductor wafer between the semiconductor wafer and the dancing frame, and the pressure-sensitive adhesive tape is pushed down to peel the annular reinforcing portion from the pressure-sensitive adhesive tape. The method for manufacturing a semiconductor device according to claim 1, wherein the method is a semiconductor device manufacturing method.   The method of manufacturing a semiconductor device according to claim 3, wherein the peeling step uses the annular peeling jig whose surface in contact with the adhesive tape has a circular ring shape.   4. The method of manufacturing a semiconductor device according to claim 3, wherein in the removing step, the annular reinforcing portion is adsorbed and removed from the surface side of the semiconductor wafer in a state where the annular peeling jig is lowered. 2. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of reducing the adhesive strength, the back surface of the semiconductor wafer is irradiated with ultraviolet rays.

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