JP2014022695A - Plasma processing apparatus and calibration method therefor - Google Patents

Abstract

Disclosed is a plasma processing apparatus that changes parts or changes over time, or an apparatus that can calibrate a plurality of processing conditions between a plurality of apparatuses and a calibration method thereof.
Data of an apparatus sensor capable of grasping a plasma state is obtained by sequentially changing one apparatus parameter of plasma generation conditions as a reference, and sequentially changing a plurality of apparatus parameters of other plasma generation conditions. (S12 to S15), the apparatus sensor data is compared with another apparatus to grasp the offset value (S16), and the plasma generation condition is adjusted based on the offset value (S17). A device that realizes it.
[Selection] Figure 1

Description

  The present invention relates to a plasma processing apparatus suitable for fine processing of a large-diameter substrate surface and a calibration method thereof.

  2. Description of the Related Art Recent semiconductor device manufacturing apparatuses, particularly plasma processing apparatuses such as dry etching apparatuses, process semiconductor substrates using high frequency or microwave generated plasma. With the miniaturization of the pattern formed in the semiconductor device, there is a risk that non-negligible variations in the performance of the semiconductor device may occur even with a slight shift in plasma during processing that has been allowed. Therefore, in order to stably manufacture a semiconductor device with little variation in performance, it is required to control the plasma more stably.

  The fluctuation factors of the performance of the semiconductor device due to the dry etching process include variations in the chip due to variations in the processing line width due to etching, variations in the semiconductor substrate due to variations in the distribution of radicals and ions in the plasma, There are changes over time due to changes in the wall surface state inside the dry etching processing apparatus due to repeated substrate processing, and machine-to-apparatus differences due to variations in individual parts of the plasma processing apparatus.

  In order to suppress variations in the chip and in the semiconductor substrate, in a general plasma processing apparatus, high-frequency or microwave power for generating plasma, pressure in the processing chamber, gas flow rate introduced into the processing chamber, By changing apparatus parameters such as high-frequency bias power applied to the sample stage on which the semiconductor substrate is placed, the processing conditions are optimized so that a desired etching shape can be obtained uniformly in the chip or in the semiconductor substrate.

  However, in the plasma processing apparatus, as the number of processed semiconductor substrates is increased, the state of the inner wall surface of the apparatus changes over time due to surface roughness due to etching, changes in the inner wall thickness, or adhesion of reaction products to the inner wall surface. Due to changes over time, the etching shape changes even under optimized processing conditions. Therefore, the number of processed sheets and the processing time are managed, replacement of consumables and cleaning of the inner wall parts of the apparatus are performed. However, replacement or cleaning of the consumables may change the inner wall state even slightly, which may cause unacceptable variations in the performance of the semiconductor device. For this reason, it is necessary to calibrate the processing conditions against changes in the inner wall state due to changes over time, replacement of consumables, cleaning, and the like.

  Further, in the production of semiconductor devices, one production line is constructed on a minimum scale, and the manufacturing process is optimized so as to achieve the desired product quality. Thereafter, a plurality of manufacturing apparatuses for each process are introduced in accordance with the mass production situation. However, even if the processing conditions optimized for other etching equipment to be introduced at the time of mass production expansion are transferred as they are, the etching shape will vary due to the machine difference between the equipment, and the semiconductor device performance will vary. There is not enough. Therefore, it is necessary to calibrate the variation between the plasma processing apparatus characteristics so that the etching shape does not vary.

  As a background art of a calibration technique between plasma processing apparatuses, there is JP 2009-295658 A (Patent Document 1). This gazette states that in the calibration method of a semiconductor manufacturing apparatus for manufacturing a semiconductor device, using a semiconductor manufacturing apparatus as a reference, a plurality of parameters are assigned from a central condition, and data of a device sensor capable of grasping a plasma state is acquired. The parameter to be calibrated is specified using the acquired data, and the specified parameter of the reference semiconductor manufacturing apparatus is automatically calibrated or the semiconductor manufacturing apparatus different from the reference semiconductor manufacturing apparatus is specified. Thus, the time required for calibration of a plurality of semiconductor manufacturing apparatuses can be shortened, and a stable semiconductor device can be manufactured for managing plasma in the semiconductor manufacturing apparatus. Is described.

  As background art, there is JP-A-2005-11858 (Patent Document 2). In this publication, “having a Vpp measurement circuit for measuring a peak-to-peak voltage Vpp of a high-frequency signal for bias applied to plasma when the μ-wave power is changed, the Vpp characteristic in μ-wave power dependency is grasped in advance. Based on this Vpp characteristic, a μ-wave power value is set in the μ-wave power supply control circuit so that Vpp is in a stable region even if the number of processed semiconductor devices is increased. It is described that the fluctuation of the process is less likely to occur even if the number of wafers processed is overlapped by controlling the wave power source and outputting the μ wave power set value.

JP 2009-295658 A JP 2005-11858 A

  However, in Patent Document 1, sufficient consideration has not been given to reducing machine differences for a plurality of processes. That is, the calibration parameters are determined so as to suppress a machine difference with respect to a specific central condition by changing a plurality of parameters. However, it is difficult to suppress the machine difference because the calibration parameter may not always be appropriate for a process different from the central condition.

  In Patent Document 2, sufficient consideration has not been given to changes with time and machine differences caused by factors other than microwave power. That is, since the Vpp characteristic changes depending on parameters other than the microwave power, even if the Vpp characteristic is calibrated only by the microwave power, it is difficult to sufficiently suppress the machine difference.

  An object of the present invention is to provide a plasma processing apparatus that can be calibrated with respect to processing conditions of a plurality of processes between a plurality of plasma processing apparatuses or a plasma processing apparatus that changes parts or changes over time, and a calibration method thereof. .

In order to solve the above problems, for example, the configuration described in the claims is adopted.
The present application includes a plurality of means for solving the above-mentioned problems. For example, a vacuum vessel, a gas introduction means for introducing a plasma gas into the vacuum vessel, and a vacuum vessel introduced into the vacuum vessel. A pressure control means for controlling the pressure of the gas; a plasma generating means for generating plasma in the gas introduced into the vacuum container; and a mounting for placing an object to be plasma-treated in the vacuum container. In a plasma processing apparatus comprising: a placement unit; a high frequency power source that supplies power for applying a high frequency bias to a workpiece placed on the placement unit; and a control device that controls each of the units.
The control device includes:
First, the device sensor data that can grasp the plasma state is obtained by sequentially changing one device parameter of the plasma generation condition as a reference and sequentially changing a plurality of device parameters of the other plasma generation conditions. Grasping means,
A plasma processing apparatus comprising: a second grasping means for grasping how much the data of the apparatus sensor is compared with another plasma processing apparatus having the same structure.

A vacuum container; gas introducing means for introducing a plasma gas into the vacuum container; pressure control means for controlling the pressure of the gas introduced into the vacuum container; A plasma generating means for generating plasma in the gas, a placing means for placing the workpiece to be plasma-treated in the vacuum vessel, and a high-frequency bias applied to the workpiece placed on the placing means. In a plasma processing apparatus calibration method comprising a high-frequency power source for supplying power for application and a control device for controlling these means,
First, the device sensor data that can grasp the plasma state is obtained by sequentially changing one device parameter of the plasma generation condition as a reference, and sequentially changing a plurality of device parameters of the other plasma generation conditions. And the process of
A second step of initially or periodically measuring the data of the device sensor and holding it as a database;
A third step of grasping how much the data of the device sensor is shifted compared with another plasma processing device of the same structure;
And a fourth step of adjusting a plasma generation condition based on the grasped shift. A calibration method for a plasma processing apparatus, comprising:

  ADVANTAGE OF THE INVENTION According to this invention, the plasma processing apparatus which can be calibrated with respect to the process conditions of a some process between the plasma processing apparatus which changed parts or changed with time, or several plasma processing apparatuses can be provided. .

It is a flowchart which shows the calibration method of the plasma processing apparatus which concerns on the Example of this invention. BRIEF DESCRIPTION OF THE DRAWINGS It is a whole structure schematic longitudinal cross-sectional view of the plasma processing apparatus based on the Example of this invention. In the plasma processing apparatus shown in FIG. 2, the change of the peak-to-peak voltage Vpp of the high-frequency power and the Vpp characteristic when the microwave power is sequentially changed are measured. It is the figure explaining the process which calculates | requires the 1st derivative of the Vpp characteristic shown in FIG. 3, and calculates | requires an inflection point. It is a figure showing the fingerprint produced by calculating | requiring the point where an inflection point appears by changing coil current and microwave power sequentially in the plasma processing apparatus used as a reference | standard or calibration object. It is a figure showing the comparison of the fingerprint of two apparatuses of a reference | standard apparatus and calibration object. It is a figure showing the fingerprint of the reference | standard apparatus and two apparatuses of calibration object which calibrated the apparatus of calibration object.

  As a result of studying means for enabling calibration with respect to processing conditions of a plurality of processes between a plurality of plasma processing apparatuses or plasma processing apparatuses that have changed parts or have changed over time, the inventors have performed numerical control. The peak-to-peak voltage Vpp and current of the power source, the amount of light emitted from the plasma, the pressure in the processing chamber, the gas supply flow rate introduced into the processing chamber, the power of the high-frequency power source for generating plasma (microwave power), and the temperature that controls the temperature of the sample It has been found that the controller set temperature and the like may be compared, calibrated and controlled one by one according to the processing conditions of the process. The present invention is based on this new finding.

Since the parameters of each device component are compared and calibrated based on the effect on the plasma state unique to the device calibration component, plasma performance differences due to variations in device components are reduced, and etching is performed for multiple process conditions. Changes in the processing shape with time and differences between devices can be reduced, and variations in semiconductor devices can be suppressed.
Problems, calibration, and effects other than those described above will be clarified by the following description of embodiments.
Hereinafter, the present invention will be described in detail with reference to examples.

  A first embodiment of the present invention will be described with reference to the drawings.

In this embodiment, a plurality of plasma processing apparatuses for manufacturing a plurality of semiconductor devices and a calibration method for the plasma processing apparatuses will be described. Assume that there are a plurality of plasma processing apparatuses (for example, two). Here, one of them is a reference apparatus A, and the other is an apparatus B to be subjected to machine difference calibration. It is assumed that there is a machine difference between the apparatuses A and B due to performance variation of each apparatus component or a change with time due to long-term use. The reference apparatus A may be an apparatus used for optimizing apparatus parameters so that a desired etching result is obtained before mass production is started.
FIG. 1 is a flowchart showing a calibration method of a plasma processing apparatus for manufacturing a semiconductor device in this embodiment. The flowchart of FIG. 1 relates to a plasma processing apparatus calibration method, but only shows a plasma processing apparatus calibration method sufficient to explain the present embodiment.

  First, among the apparatus parameters of the reference apparatus A and the apparatus B to be calibrated, apparatus parameters that can be calibrated by the measuring instrument are calibrated in each apparatus (step S11). Using the calibrated apparatus parameters, data for grasping the plasma state is acquired in the following steps. The apparatus parameters that can be calibrated include the high frequency for generating plasma and the power of the microwave, and the output of the high frequency power source for applying a bias to the sample substrate to be processed. These parameters can be calibrated by measuring the output using a measuring instrument called a power meter and a pseudo resistance load. In addition, although step S11 is not essential, by performing this step, the plasma processing apparatus can be calibrated with higher accuracy.

  Next, in the reference apparatus A, all the conditions except for one of the apparatus parameters are fixed, and for each set value when the non-fixed parameters (hereinafter, target parameters) are sequentially changed, The parameters calibrated by the measuring instrument are sequentially changed as reference parameters (hereinafter referred to as reference parameters), and apparatus sensor data when plasma is generated is acquired (step S12). The device sensor data includes a peak-to-peak voltage Vpp of a high-frequency power source for applying a high-frequency bias, a high-frequency current value, or a value obtained by measuring light emission from plasma with a spectrometer. This is performed using all device parameters other than the reference parameters as target parameters.

  Next, using the data of the device sensor obtained by the reference device A, the influence of each target parameter on the plasma is digitized (step S13). By sequentially changing the reference device parameter for each set value of the target parameter, it is possible to obtain a data curve of the device sensor data for each set value of the target parameter. By calculating the first or second derivative of the curve by numerical differentiation, the plasma at each set value of the target parameter, such as the maximum / minimum / inflection point of the curve and the point where the sensor output is saturated, is characteristic. The change point can be quantified by the value of the reference parameter. By associating the value of the reference parameter with each set value of the target parameter on a one-to-one basis, a two-dimensional scatter diagram with the target parameter and the reference parameter as axes can be created. This two-dimensional scatter diagram represents the unique effect of each device parameter on the plasma and is defined as the fingerprint of each device parameter. In the case of a device parameter that does not show a characteristic point such as a maximum point in the device sensor data curve, a threshold value is set in the device sensor data and the threshold value is exceeded or exceeded. The value of the reference parameter that falls can be associated with each set value of the target parameter.

  In many cases, the device sensor data includes noise. Therefore, by performing numerical differentiation after passing the original curve through a low-pass filter, or by performing numerical differentiation using the smoothed differentiation method, characteristic points such as a point where the influence of noise is reduced and maximized are obtained. I can do it.

  Next, in apparatus B, all the conditions except for one of the apparatus parameters are fixed, and the reference parameter is set for each set value when the unfixed parameter is sequentially changed as the target parameter. Data of the device sensor when the plasma is generated by sequentially changing is acquired. This is performed using all device parameters other than the reference parameters as target parameters (step S14). Then, the fingerprint of each device parameter is calculated by the same method as that used in the reference device A (step S15).

  Next, the fingerprints of the device parameters of the reference device A and the device B are compared. (Step S16). For comparison, the cross-correlation function of the two fingerprints of the reference device A and device B for each device parameter is used. Using the cross-correlation function, the distance between the two fingerprint curves is calculated corresponding to the difference in device parameters when the cross-correlation number is maximized. If the absolute value of the distance is less than or equal to the threshold value, it is considered that the fingerprints are equivalent, the calibration is terminated, and the apparatus B also starts mass production.

If device parameters in the fingerprint has differences, to calibrate the offset value E _B and defined machine difference of the distance device parameters between fingerprint (step S17). Calibration using this offset value E _B, when the optimized parameters S _A at datum A is set to device B, the automatic device B, and the actual parameter S _B of the apparatus B S _B = S _A -E _B
And convert it. By performing this calibration, it is possible to match the plasma change characteristics of the reference device A and the device B, and to reduce the time-dependent change in the etching process shape and the difference between the devices. Thereafter, the process returns to step S14 again, and the data for creating the fingerprint of the apparatus B is acquired in a state where calibration by the offset value is performed. The offset value can be obtained by a known method. For example, a data sheet having a base point can be moved and rotated left and right and superimposed by visual observation, and the difference between the base points can be used as an offset value. Also, the offset value can be automatically calculated by known image recognition.

  The offset value can be simultaneously calculated and calibrated for a plurality of apparatus parameters, and the fingerprint of apparatus B can be created again. However, calibration does not need to be performed simultaneously for all device parameters where the distance between fingerprints is greater than or equal to a threshold value, and one or more calibrations are selected according to criteria such as a relatively large offset value. May be returned to step S14.

  In addition, the machine difference of the apparatus B is increased, the plasma characteristics are changed, and the shape of the fingerprint curve may be greatly different. If the shapes of the curves differ greatly, it is not possible to calibrate the machine difference using the offset value, and maintenance by the engineer and investigation of the cause of the machine difference are required. If the fingerprint shapes are different, the value of the cross-correlation function will be small, so if the maximum value of the cross-correlation function is less than or equal to the set threshold, it will be determined that the shape of the curve is different, Investigate the cause of the machine difference.

  Furthermore, even if calibration with an offset value is performed and fingerprints are acquired again and again, the distance between fingerprints of all device parameters may not fall below a threshold value. In that case, it is considered that there is a machine difference factor other than the portion that can be calibrated by the offset value. For this reason, a prescribed number is set as the number of comparison repetitions in step S16, and even when the number of comparisons exceeds the prescribed number, maintenance by the engineer and a factor difference investigation are performed.

  Moreover, after making the dimensionless by dividing the set value of each target parameter by the maximum set value, a plurality of fingerprints of the apparatus can be combined into one fingerprint. Thereby, the distance between the curves of the fingerprints made into one can be calculated, and the offset value can be obtained by returning the distance to the original dimension of each target parameter. By comparing fingerprints created with multiple device parameters and determining device offsets, it is possible to more accurately correct changes over time and differences between devices depending on multiple device parameters, and reproduce the process. It becomes possible to improve the property.

  FIG. 2 is a longitudinal sectional view showing an outline of the entire configuration of the plasma processing apparatus according to this embodiment. A processing chamber 104 is formed by installing a shower plate 102 and a dielectric window 103 for introducing an etching gas into the vacuum vessel 101 and sealing the upper portion of the vacuum vessel 101.

  A gas supply device 105 for flowing an etching gas is connected to the shower plate 102. In addition, a vacuum exhaust device (not shown) is connected to the vacuum vessel 101 via a vacuum exhaust port 106.

  In order to transmit electric power (microwave power) for generating plasma to the processing chamber 104, a waveguide 107 (or an antenna) that radiates electromagnetic waves is provided above the dielectric window 103. The electromagnetic wave transmitted to the waveguide 107 (or antenna) oscillates a 2.45 GHz microwave from the electromagnetic wave generating power supply 109. A magnetic field generating coil 110 that forms a magnetic field is provided on the outer periphery of the processing chamber 104, and the electric power oscillated from the electromagnetic wave generation power source 109 is generated in the processing chamber 104 by electron cyclotron resonance with the formed magnetic field. Generate plasma. Reference numeral 108 denotes a cavity resonator.

  The vacuum vessel 101 is provided with an observation window 124 for observing the emission state of plasma, an optical fiber 125 for guiding light from the observation window, and a spectrometer 126 for observing the emission spectrum of plasma.

  In addition, a wafer mounting electrode 111 is provided below the vacuum vessel 101 so as to face the shower plate 102. The wafer mounting electrode 111 has an electrode surface covered with a sprayed film (not shown), and is connected to a DC power source 116 for electrostatic adsorption through a high frequency filter 115. Further, a high frequency power source (high frequency bias power source) 114 is connected to the wafer mounting electrode 111 via a matching circuit 113. The wafer mounting electrode 111 is connected to a peak-to-peak voltage measurement circuit 117 that measures a peak-to-peak voltage Vpp of the applied high-frequency power and a high-frequency current measurement circuit 118 that measures a high-frequency current. The refrigerant channel 119 is connected to the temperature controller 120, the heater 121 is included, and the heater controller 122 is connected. Further, a temperature sensor 123 is installed on the wafer mounting electrode 111, and its signal is transmitted to the heater controller 122, so that the output of the heater 121 and the temperature of the wafer (processed object) 112 become a desired temperature. The set temperature of the temperature controller 120 that controls the temperature of the refrigerant is controlled.

  The wafer 112 transferred into the processing chamber 104 is adsorbed and temperature-adjusted on the wafer mounting electrode 111 by the electrostatic force of the DC voltage applied from the electrostatic attraction DC power source 116, and the gas supply device 105 performs a desired operation. After supplying the etching gas, the inside of the processing chamber 104 is set to a predetermined pressure, and plasma is generated in the processing chamber 104.

  By applying high frequency power from a high frequency power source (high frequency bias power source) 114 connected to the wafer mounting electrode 111, a negative voltage generally called a self-bias is generated on the wafer mounting electrode 111, Ions are accelerated by the self-bias, ions are drawn from the plasma into the wafer, and the wafer 112 is etched.

  The control device 127 controls these devices in accordance with each processing condition, and the control device 127 receives data from various device sensors, calculates a fingerprint, and performs calibration using the offset value. In step S16, the warning device 128 receives a signal from the control device 127 when the fingerprint curve shape is different or the fingerprint comparison count exceeds the specified count, and calibration using the fingerprint cannot be performed. Is warned to engineers and equipment users.

  As an example of the fingerprint, the reference parameter is the power of the electromagnetic wave generation power source 109 for generating plasma (microwave power), and the device parameter for fingerprint creation is the current of the magnetic field generating coil 110 (hereinafter referred to as the coil current) and acquisition. Consider a case where the data of the device sensor to be used is the peak-to-peak voltage Vpp measured by the peak-to-peak voltage measurement circuit 117. In addition, the apparatus parameters that are the target parameters in the apparatus of FIG. 2 include the pressure in the processing chamber 104, the gas supply flow rate of the gas supply apparatus 105, the power of the high-frequency power supply 114, the set temperature of the temperature controller 120, and the like.

  FIG. 3 shows an example in which the Vpp is measured by sequentially changing the microwave power as the reference parameter. In the case of FIG. 3, it can be seen that there is a local maximum point.

  FIG. 4 shows the first derivative calculated by the smoothing differential method of the curve of FIG. A point 41 that is 0 in FIG. 4 is a maximum point in FIG. 3, and a maximum point can be obtained by obtaining a first derivative. Such measurement and calculation are performed for each coil current. FIG. 5 shows the fingerprint thus obtained.

  FIG. 6 compares the fingerprints of the reference device A and the device B to be calibrated when there is a difference in coil current. A distance 61 between the two curves is calculated, and the distance is set as an offset value.

  FIG. 7 is an example in which fingerprints are compared when apparatus B is calibrated to apparatus B using the offset value obtained in FIG. By calibrating using the offset value, machine differences can be reduced. By applying the above technique to a plurality of processes, the process processing apparatus can be calibrated with respect to the processing conditions of the plurality of processes. By using the device A as the device before the component replacement and the device B as the device after the component replacement, the device after the component replacement can be calibrated with respect to the device before the component replacement. Further, by setting the device A as a device that has changed over time as the device B and as the device B as a device that has changed over time, the device that has changed over time can be calibrated with respect to the device at the time of introduction.

  Each device parameter that constitutes the device is a target parameter, and the reference parameter is sequentially changed with respect to each set value, and the calculation for obtaining the maximum, minimum, inflection point, etc. of the data curve of each device sensor is performed manually. If you do this, it takes a lot of work. For this purpose, the apparatus is provided with a function for automatically measuring and calculating the fingerprint, and the parameters are automatically changed sequentially, and the Vpp and the emission spectrum of the plasma are collected and stored as a database.

  The control device 127 of the plasma processing apparatus according to the present embodiment is provided with a program for receiving a signal from a measuring instrument (for example, a peak-to-peak voltage measuring instrument 117 or a spectroscope 126) and automatically acquiring the fingerprint. And a storage medium for storing the obtained fingerprint. Furthermore, a known algorithm for comparing the obtained fingerprint with a reference fingerprint and automatically calculating an offset value so as to minimize the difference is provided. Further, the calculated offset value is stored in a parameter of each device constituent device, and control is performed so that the difference of each device constituent device between the devices becomes narrow. Differences in basic characteristics of plasma between devices and variations in gas, radical density, etc. are reduced by obtaining and calibrating offset values based on these fingerprints. It is possible to reduce the variation in performance of the semiconductor device.

  According to the present embodiment, it is possible to provide a plasma processing apparatus that can be calibrated with respect to processing conditions of a plurality of processes between a plurality of plasma processing apparatuses or a plasma processing apparatus that has changed parts or has changed over time. it can.

  In addition, this invention is not limited to an above-described Example, Various modifications are included. For example, the present invention can be applied to other plasma processing apparatuses such as an inductively coupled plasma processing apparatus (ICP) and a capacitively coupled plasma processing apparatus (CCP). The above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those provided with all the configurations described above, and various modifications can be made without departing from the scope of the invention. It is.

41: Microwave power at which a maximum point appears 61: Distance between two curves 101: Vacuum container 102: Shower plate 103: Dielectric window 104: Processing chamber 105: Gas supply device 106: Vacuum Exhaust port, 107 ... waveguide, 108 ... cavity resonator, 109 ... power supply for electromagnetic wave generation, 110 ... magnetic field generating coil, 111 ... wafer mounting electrode, 112 ... wafer (object to be processed), 113 ... matching circuit, DESCRIPTION OF SYMBOLS 114 ... High frequency power supply (High frequency bias power supply), 115 ... High frequency filter, 116 ... Electrostatic adsorption DC power supply, 117 ... Peak-to-peak voltage measurement circuit, 118 ... High frequency current measurement circuit, 119 ... Refrigerant flow path, 120 ... Temperature control 121: heater, 122 ... heater controller, 123 ... temperature sensor, 124 ... observation window, 125 ... optical fiber, 126 ... spectroscope, 127 ... control Location, 128 ... warning device.

Claims (14)

A vacuum vessel, gas introduction means for introducing a gas for plasma into the vacuum vessel, pressure control means for controlling the pressure of the gas introduced into the vacuum vessel, and the gas introduced into the vacuum vessel Plasma generating means for generating plasma in the gas, placing means for placing the object to be plasma-treated in the vacuum vessel, and applying a high frequency bias to the object to be treated placed on the placing means In a plasma processing apparatus comprising a high-frequency power source for supplying power for power and a control device for controlling these means,
The control device includes:
First, the device sensor data that can grasp the plasma state is obtained by sequentially changing one device parameter of the plasma generation condition as a reference and sequentially changing a plurality of device parameters of the other plasma generation conditions. Grasping means,
And a second grasping means for grasping how much the data of the device sensor is shifted as compared with another plasma processing device having the same structure. In claim 1,
The device sensor data capable of grasping the plasma state grasped by the first grasping means grasps the maximum value, the minimum value, the inflection point of the device sensor data, or the point at which the device sensor data is saturated. Yes,
The second grasping means creates, for each device parameter, a scatter diagram having two axes, the device parameter changed using the grasped point as a reference and the device parameter changed with respect to the device parameter. The plasma processing apparatus is characterized in that the scatter diagram is compared with another plasma processing apparatus having the same structure to grasp how much each apparatus parameter is shifted. In claim 2,
A plasma processing apparatus, wherein the apparatus parameters to be compared are two or more types. In claim 1,
The plasma processing apparatus, wherein the one apparatus parameter to be changed as a reference is calibrated in advance using a measuring instrument as a reference. In claim 1,
The plasma processing apparatus characterized in that the data of the apparatus sensor capable of grasping the plasma state includes a peak-to-peak voltage Vpp of the high-frequency power source. In claim 1,
The plasma processing apparatus characterized in that the data of the apparatus sensor capable of grasping the plasma state includes a high-frequency current of the high-frequency power source. In claim 1,
The plasma processing apparatus, wherein the data of the apparatus sensor capable of grasping the plasma state includes a light emission amount from the plasma. A vacuum vessel, gas introduction means for introducing a gas for plasma into the vacuum vessel, pressure control means for controlling the pressure of the gas introduced into the vacuum vessel, and the gas introduced into the vacuum vessel Plasma generating means for generating plasma in the gas, placing means for placing the object to be plasma-treated in the vacuum vessel, and applying a high-frequency bias to the object placed on the placing means In a plasma processing apparatus calibration method comprising a high-frequency power supply for supplying power for power and a control device for controlling these means,
First, the device sensor data that can grasp the plasma state is obtained by sequentially changing one device parameter of the plasma generation condition as a reference, and sequentially changing a plurality of device parameters of the other plasma generation conditions. And the process of
A second step of initially or periodically measuring the data of the device sensor and holding it as a database;
A third step of grasping how much the data of the device sensor is shifted compared with another plasma processing device of the same structure;
And a fourth step of adjusting a plasma generation condition based on the grasped shift. A calibration method for a plasma processing apparatus, comprising: In claim 8,
The device sensor data which can be grasped in the first step and which can grasp the plasma state is obtained by grasping the maximum value, the minimum value, the inflection point of the device sensor data or the point at which the device sensor data is saturated. And
The third step creates, for each device parameter, a scatter diagram with two axes, the device parameter changed using the grasped point as a reference and the device parameter changed in response thereto, for each device parameter. A method for calibrating a plasma processing apparatus, comprising: comparing a scatter diagram with another plasma processing apparatus having the same structure to determine how much each apparatus parameter has shifted. In claim 9,
A method for calibrating a plasma processing apparatus, wherein the apparatus parameters to be compared are two or more. In claim 8,
The method for calibrating a plasma processing apparatus, wherein the one apparatus parameter to be changed as a reference is calibrated in advance using a reference measuring instrument. In claim 8,
The apparatus sensor data capable of grasping the plasma state includes a peak-to-peak voltage Vpp of the high-frequency power source. In claim 8,
The method of calibrating a plasma processing apparatus, wherein the apparatus sensor data capable of grasping the plasma state includes a high-frequency current of the high-frequency power source. In claim 8,
The method of calibrating a plasma processing apparatus, wherein data of the apparatus sensor capable of grasping the plasma state includes a light emission amount from plasma.

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