JP2014055871A - Detecting element, detecting module, an imaging device, detection imaging module, electric device, and terahertz camera - Google Patents

Abstract

In a conventional detection element, it is difficult to improve detection performance.
A detection unit 52 whose characteristics change according to the amount of absorbed electromagnetic waves, a support layer 61 that supports the detection unit 52, and a support layer 61 from the opposite side of the support layer 61 to the detection unit 52 side. It has a substrate 53 to be supported, and a cavity portion 67 provided in a region of the substrate 53 that overlaps the detection unit 52, and the support layer 61 includes a first support layer 63 containing zircon oxide. Detection element.
[Selection] Figure 5

Description

  The present invention relates to a detection element, a detection module, an imaging device, an imaging detection module, an electronic apparatus, a terahertz camera, and the like.

  Conventionally, a thermal detection element is known as a detection element that can detect infrared rays, which are a kind of electromagnetic waves. Some of such detection elements have conventionally been provided with a cavity between a membrane that supports the detection element and a base that supports the membrane (see, for example, Patent Document 1).

JP 2011-203168 A

In the configuration having the hollow portion, the membrane is generally made of silicon oxide, silicon nitride, or the like. According to the configuration having the cavity, the detection element can be thermally separated from the base. Thereby, the detection performance in the detection element can be improved.
However, in the configuration having the hollow portion, the membrane may be bent or dented to the hollow portion side. When the membrane is bent or dented, the cavity is narrowed. As a result, the thermal separation function of the cavity may be impaired.
That is, the conventional detection element has a problem that it is difficult to improve detection performance.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A detection unit whose characteristics change according to the amount of absorbed electromagnetic waves, a support layer that supports the detection unit, and the support layer that is supported from a side opposite to the detection unit side of the support layer And a cavity provided in a region overlapping with the detection portion in the base portion, and the support layer includes a layer containing zircon oxide.

  In the detection element of this application example, the support layer that supports the detection unit includes a layer containing zircon oxide. Zircon oxide is one of materials having higher rigidity than silicon oxide and silicon nitride. For this reason, the rigidity of a support layer can be improved by the layer containing a zircon oxide. Thereby, it can suppress low that a support layer bends or dents to the cavity part side. For this reason, since it can be made easy to avoid that a cavity part narrows, it can be made easy to avoid that the thermal isolation | separation function of a cavity part is impaired. As a result, it is possible to easily improve the detection performance of the detection element.

  Application Example 2 In the above detection element, the electrode provided on the detection unit side of the base and electrically connected to the detection unit, and the base from the side opposite to the detection unit side A detection element comprising: a wiring penetrating to the detection portion side and electrically connected to the electrode on the detection portion side of the base portion.

  In this application example, electrical connection can be made to the detection unit from the side opposite to the detection unit side of the base.

  Application Example 3 In the detection element described above, the detection unit changes the electrical characteristics according to the amount of infrared rays included in the electromagnetic wave.

  In this application example, the amount of infrared rays can be detected based on a change in electrical characteristics.

  Application Example 4 A detection unit whose characteristics change according to the amount of absorbed electromagnetic waves, a support layer that includes a layer containing zircon oxide, supports the detection unit, and the support layer includes the support layer. A base portion that is supported from the side opposite to the detection portion side, a hollow portion provided in a region overlapping the detection portion in the base portion, and provided on the detection portion side of the base portion and electrically connected to the detection portion An electrode, a wiring penetrating from the side opposite to the detection unit side to the detection unit side, electrically connected to the electrode on the detection unit side of the base, and the base A circuit board that is provided on the opposite side of the detection unit and receives an electrical signal from the detection unit via the electrode and the wiring, and the circuit board is a terminal to which the signal is input. And the wiring is connected to the terminal portion. Detection module which is characterized.

In the detection module of this application example, the support layer that supports the detection unit includes a layer containing zircon oxide. Zircon oxide is one of materials having higher rigidity than silicon oxide and silicon nitride. For this reason, the rigidity of a support layer can be improved by the layer containing a zircon oxide. Thereby, it can suppress low that a support layer bends or dents to the cavity part side. For this reason, since it can be made easy to avoid that a cavity part narrows, it can be made easy to avoid that the thermal isolation | separation function of a cavity part is impaired. As a result, it is possible to easily improve the detection performance of the detection unit.
Further, in this detection module, electrical connection can be made to the detection unit from the side opposite to the detection unit side of the base via a wiring penetrating the base. And the wiring which penetrates the base is connected to the terminal part of the circuit board provided on the side opposite to the detection part side of the base on the side opposite to the detection part side. For this reason, since it can avoid providing the wiring for connecting with a circuit board in the outer side of a base, size reduction of a detection module is achieved.

  Application Example 5 A plurality of imaging elements arranged in two directions intersecting each other, the imaging element having a detection unit whose characteristics change according to the amount of absorbed electromagnetic waves, and a support that supports the detection unit A layer, a base that supports the support layer from a side opposite to the detection unit side of the support layer, and a cavity provided in a region of the base that overlaps the detection unit. The imaging device characterized in that the layer includes a layer containing zircon oxide.

  The imaging device of this application example includes a plurality of imaging elements arranged in two directions intersecting each other. In the imaging device in this imaging device, the support layer that supports the detection unit includes a layer containing zircon oxide. Zircon oxide is one of materials having higher rigidity than silicon oxide and silicon nitride. For this reason, the rigidity of a support layer can be improved by the layer containing a zircon oxide. Thereby, it can suppress low that a support layer bends or dents to the cavity part side. For this reason, since it can be made easy to avoid that a cavity part narrows, it can be made easy to avoid that the thermal isolation | separation function of a cavity part is impaired. As a result, it is possible to easily improve the detection performance of the image sensor.

  Application Example 6 In the imaging device described above, the electrode provided on the detection unit side of the base and electrically connected to the detection unit, and the base from the side opposite to the detection unit side An imaging device comprising: a wiring penetrating to a detection portion side and electrically connected to the electrode on the detection portion side of the base portion.

  In this application example, electrical connection can be made to the detection unit from the side opposite to the detection unit side of the base.

  Application Example 7 In the imaging device described above, the detection unit changes the electrical characteristics according to the amount of infrared rays included in the electromagnetic wave.

  In this application example, the amount of infrared rays can be detected based on a change in electrical characteristics. Thereby, the distribution of infrared rays among a plurality of image sensors can be grasped, and an image corresponding to this distribution can be taken.

  [Application Example 8] A plurality of imaging elements arranged in two directions intersecting each other, and a circuit board that receives electrical signals from the plurality of imaging elements. A detection unit whose characteristics change according to the amount, a layer containing zircon oxide, a support layer that supports the detection unit, and the support layer that is supported from a side opposite to the detection unit side of the support layer The base, a cavity provided in a region overlapping the detection unit, an electrode provided on the detection unit side of the base and electrically connected to the detection unit, and the base A wiring penetrating from the opposite side to the detection unit side to the detection unit side and electrically connected to the electrode on the detection unit side of the base, and the circuit board includes the base of the base The electrode is provided on the side opposite to the detection unit side, and the electrode The signal has a terminal portion to be input, an imaging module in which the wiring is characterized in that, connected to the terminal unit for receiving from said detecting unit via a fine the wiring.

The imaging module of this application example includes a plurality of imaging elements arranged in two directions intersecting with each other, and a circuit board that receives electrical signals from the plurality of imaging elements. In the imaging device in this imaging module, the support layer that supports the detection unit includes a layer containing zircon oxide. Zircon oxide is one of materials having higher rigidity than silicon oxide and silicon nitride. For this reason, the rigidity of a support layer can be improved by the layer containing a zircon oxide. Thereby, it can suppress low that a support layer bends or dents to the cavity part side. For this reason, since it can be made easy to avoid that a cavity part narrows, it can be made easy to avoid that the thermal isolation | separation function of a cavity part is impaired. As a result, it is possible to easily improve the detection performance of the image sensor.
Further, in this imaging module, electrical connection can be made to the detection unit from the side opposite to the detection unit side of the base via a wiring penetrating the base. And the wiring which penetrates the base is connected to the terminal part of the circuit board provided on the side opposite to the detection part side of the base on the side opposite to the detection part side. For this reason, since it can avoid providing the wiring for connecting with a circuit board in the outer side of a base, size reduction of an imaging module is achieved.

  Application Example 9 An electronic apparatus having the above-described detection element.

  In this application example, it is possible to easily improve the detection performance of the electronic device by using the detection element that can easily improve the detection performance.

  Application Example 10 An electronic apparatus having the detection module described above.

  In this application example, it is possible to easily improve the detection performance in the electronic device by the detection module that can easily improve the detection performance. Moreover, in this electronic device, since the detection module can be reduced in size, the electronic device can be reduced in size.

  Application Example 11 An electronic apparatus having the imaging device described above.

  In this application example, it is possible to easily improve the detection performance in the electronic device by the detection module that can easily improve the detection performance.

  Application Example 12 An electronic apparatus including the imaging module described above.

  In this application example, it is possible to easily improve the detection performance in the electronic device by using the imaging module that can easily improve the detection performance. Moreover, in this electronic device, since the imaging module can be reduced in size, the electronic device can be reduced in size.

  Application Example 13 An electromagnetic wave source that emits electromagnetic waves including infrared rays in the terahertz band toward the subject, and an imaging device that receives the infrared rays in the terahertz band reflected by the subject and images the subject, The imaging device has a plurality of imaging elements arranged in two directions intersecting each other, and the imaging element has a detection unit whose characteristics change according to the amount of absorbed electromagnetic waves, and a support layer that supports the detection unit And a base portion that supports the support layer from the side opposite to the detection portion side of the support layer, and a hollow portion provided in a region of the base portion that overlaps the detection portion, and the support layer Includes a layer containing zircon oxide, and a terahertz camera.

  The terahertz camera of this application example includes an electromagnetic wave source that emits electromagnetic waves including terahertz band infrared rays toward a subject, and an imaging device that receives the terahertz band infrared rays reflected by the subject and images the subject. . This imaging device has a plurality of imaging elements arranged in two directions crossing each other. In the imaging device in this imaging device, the support layer that supports the detection unit includes a layer containing zircon oxide. Zircon oxide is one of materials having higher rigidity than silicon oxide and silicon nitride. For this reason, the rigidity of a support layer can be improved by the layer containing a zircon oxide. Thereby, it can suppress low that a support layer bends or dents to the cavity part side. For this reason, since it can be made easy to avoid that a cavity part narrows, it can be made easy to avoid that the thermal isolation | separation function of a cavity part is impaired. As a result, it is possible to easily improve the detection performance of the imaging device. For this reason, in this terahertz camera, it is possible to easily improve the imaging performance.

FIG. 2 is a block diagram illustrating a main configuration of a camera according to the present embodiment. FIG. 2 is a block diagram illustrating a main configuration of an imaging unit in the present embodiment. FIG. 2 is an equivalent circuit diagram of the imaging device according to the present embodiment. The top view which shows the detection element in 1st Embodiment. Sectional drawing in the AA in FIG. The enlarged view of the detection part in FIG. 4A and 4B are diagrams illustrating connection between an imaging device and an IC according to the present embodiment. Sectional drawing in the CC line | wire in FIG. The figure explaining the manufacturing method of the imaging device in 1st Embodiment. The figure explaining the manufacturing method of the imaging device in 1st Embodiment. The figure explaining the manufacturing method of the imaging device in 1st Embodiment. The figure explaining the manufacturing method of the imaging device in 1st Embodiment. The figure explaining the manufacturing method of the imaging device in 1st Embodiment. Sectional drawing which shows the imaging unit in 2nd Embodiment. The figure explaining the manufacturing method of the imaging device in 2nd Embodiment. The figure explaining the manufacturing method of the imaging device in 2nd Embodiment. The figure explaining the manufacturing method of the imaging device in 2nd Embodiment. The block diagram which shows the main structures of the driving assistance device in this embodiment. The perspective view which shows the motor vehicle carrying the driving assistance device in this embodiment. The block diagram which shows the main structures of the security apparatus in this embodiment. The schematic diagram which shows the house in which the security apparatus in this embodiment was installed. The schematic diagram which shows the main structures of the game device in this embodiment. The block diagram which shows the main structures of the controller of the game device in this embodiment. The block diagram which shows the main structures of the body temperature measuring apparatus in this embodiment. The block diagram which shows the main structures of the specific substance detection apparatus in this embodiment.

An embodiment will be described with reference to the drawings, taking a camera which is one of electronic devices as an example.
As shown in FIG. 1 which is a block diagram showing the main configuration of the camera 1 in this embodiment, an optical system 3, an imaging unit 5, an image processing unit 7, a control unit 9, a storage unit 11, and an operation Unit 13 and display unit 15. The image processing unit 7, the control unit 9, the storage unit 11, the operation unit 13, and the display unit 15 are connected to each other via a bus 17.
The optical system 3 takes an electromagnetic wave from the object and collects the electromagnetic wave from the object on the image plane, thereby forming an image of the object on the image plane.

The imaging unit 5 includes an imaging device 19 that is one of electronic devices. The imaging device 19 has a plurality of detection elements to be described later. The detection element detects an electromagnetic wave and outputs a signal corresponding to the amount of the detected electromagnetic wave. The electromagnetic wave from the object taken in by the optical system 3 described above is formed as an image on the imaging device 19. The distribution of the electromagnetic wave amount in the formed image is detected by a plurality of detection elements. The distribution of the electromagnetic wave amount in the formed image can be expressed as an image. For this reason, in this embodiment, a detection element functions as an image sensor.
The imaging unit 5 outputs the distribution of the electromagnetic wave amount in the image detected by the imaging device 19 to the image processing unit 7 as image data VD.

The image processing unit 7 performs various types of image processing such as correction processing on the image indicated by the image data VD.
The control unit 9 controls the operation of each component in the camera 1.
The storage unit 11 stores various types of information. In the storage unit 11, an area for storing program software in which a control procedure of the operation in the camera 1 is described, an area for temporarily developing various data, and the like are set.
The operation unit 13 is an interface for an operator to operate the camera 1 and includes various input buttons.
The display unit 15 displays an image indicated by the image data VD.

According to the camera 1 having the above configuration, an object can be imaged and the captured object can be displayed as an image.
In the present embodiment, a detection element that can detect infrared rays, which is a type of electromagnetic wave, is employed as the detection element of the imaging device 19. Thereby, the camera 1 can be utilized as a thermography or a night vision device.

The imaging unit 5 includes an imaging device 19, a selection circuit 21, a readout circuit 23, an A / D conversion unit 25, and a control circuit 27, as shown in FIG. 2 which is a block diagram showing the main configuration. . The selection circuit 21, the readout circuit 23, the A / D conversion unit 25, and the control circuit 27 are configured as one IC (Integrated Circuit) 29.
The imaging device 19 is provided with a plurality of detection elements 31. The plurality of detection elements 31 are arranged in the X direction and the Y direction in the drawing. The X direction and the Y direction are two directions that intersect each other. The plurality of detection elements 31 form a matrix in which the X direction is the row direction and the Y direction is the column direction.
In the present embodiment, a plurality of detection elements 31 arranged along the Y direction constitute one element row CL. In addition, a plurality of detection elements 31 arranged along the X direction constitute one element row LN.

In the present embodiment, the imaging device 19 includes n (n is an integer of 1 or more) element rows LN and m (m is an integer of 1 or more) element columns CL. That is, in the present embodiment, the plurality of detection elements 31 constitute an n-row × m-column matrix.
Hereinafter, when n element rows LN are individually identified, the notation of element row LN (i) is used. i is an integer of 1 or more and n or less. In addition, when the m element rows CL are individually identified, the notation of the element row CL (j) is used. j is an integer of 1 or more and m or less.

Here, the imaging device 19 has n selection lines T and m signal lines S as shown in FIG. 3 which is an equivalent circuit diagram. The n selection lines T are arranged in the Y direction at intervals. Each of the n selection lines T extends in the X direction. The m signal lines S are arranged in the X direction with a space between each other. Each of the m signal lines S extends in the Y direction.
The selection line T is provided for each element row LN. The signal line S is provided for each element column CL. That is, one element row LN corresponds to one scanning line T, and one element column CL corresponds to one signal line S. For this reason, in the following, when n selection lines T are individually identified, the notation of selection line T (i) is used. When m signal lines S are individually identified, the notation of signal line S (j) is used.

In the present embodiment, the detection element 31 includes a capacitor 37. For each element row LN, one electrode of the capacitor 37 is electrically connected to the corresponding selection line T. For each element row CL, the other electrode of the capacitor 37 is electrically connected to the corresponding signal line S. For this reason, it can be considered that the detection element 31 is provided corresponding to the intersection of the selection line T and the signal line S.
The selection circuit 21 illustrated in FIG. 2 is electrically connected to each selection line T of the imaging device 19. The selection circuit 21 sequentially outputs selection signals one by one to the n selection lines T (selection processing). Thereby, in the imaging device 19, n element rows LN are sequentially selected one by one.
The readout circuit 23 is electrically connected to each signal line S of the imaging device 19. The readout circuit 23 reads out the detection signal in units of element rows LN selected from the plurality of detection elements 31 via the m signal lines S (reading process). In the detection signal, a signal value corresponding to the amount of infrared light detected by the detection element 31 is reflected.

The A / D conversion unit 25 is electrically connected to the readout circuit 23. The A / D converter 25 converts the analog data of the detection signal read by the reading circuit 23 into image data VD of digital data and outputs it (A / D conversion processing).
The control circuit 27 individually controls the driving of the selection circuit 21, the readout circuit 23, and the A / D conversion unit 25. The control circuit 27 controls selection processing, reading processing, and A / D conversion processing.

(First embodiment)
As shown in FIG. 4 which is a plan view, the detection element 31 in the first embodiment includes an element substrate 51 and a detection unit 52.
The element substrate 51 includes a substrate 53, an intermediate layer 55, a protective layer 57, and a support layer 61, as shown in FIG. 5, which is a cross-sectional view taken along line AA in FIG. 4.
The substrate 53 is made of, for example, glass, quartz, silicon, or the like, and includes a first surface 53a that is a surface facing the detection unit 52 side, and a second surface 53b that is a surface facing the first surface 53a. have. In this embodiment, silicon is used as the material of the substrate 53. Hereinafter, the first surface 53a side of the substrate 53 may be referred to as the upper side, and the second surface 53b side of the substrate 53 may be referred to as the lower side.
The intermediate layer 55 is provided on the first surface 53 a of the substrate 53. The intermediate layer 55 is provided with a concave portion 56 that is concave toward the first surface 53a side (lower side) on the side (upper side) opposite to the first surface 53a side. As a material of the intermediate layer 55, for example, silicon oxide or silicon nitride can be employed. In the present embodiment, silicon oxide is employed as the material for the intermediate layer 55.

  The protective layer 57 is provided on the opposite side of the intermediate layer 55 from the substrate 53 side. The protective layer 57 covers the opposite side of the intermediate layer 55 from the substrate 53 side, including the recess 56. As a material of the protective layer 57, for example, platinum, aluminum, aluminum oxide, zircon oxide, nickel, tungsten, molybdenum, iron, or an alloy containing at least one of these as a composition may be employed. In the present embodiment, aluminum oxide is adopted as the material of the protective layer 57.

The support layer 61 includes a first support layer 63 and a second support layer 64. The first support layer 63 is provided on the opposite side of the protective layer 57 from the intermediate layer 55. In the recess 56, the protective layer 59 is separated from the first support layer 63. In the recess 56, a cavity 67 is formed between the first support layer 63 and the protective layer 59. As a material of the first support layer 63, for example, platinum, aluminum, aluminum oxide, zircon oxide, nickel, tungsten, molybdenum, iron, or an alloy containing at least one of these as a composition may be employed. In the present embodiment, zircon oxide is adopted as the material of the first support layer 63.
The second support layer 64 is provided on the opposite side of the first support layer 63 from the protective layer 57 side. As a material of the second support layer 64, for example, silicon oxide, silicon nitride, or the like can be employed. In the present embodiment, silicon oxide is employed as the second support layer 64.

The detection unit 52 is provided on the opposite side of the support layer 61 from the protective layer 57 side (upper side of the support layer 61). In the present embodiment, the detection unit 52 is provided on the upper side of the second support layer 64 (the side opposite to the first support layer 63 side of the second support layer 64). The detection part 52 is provided in a region overlapping the cavity part 67 in plan view on the opposite side of the support layer 61 from the protective layer 57 side.
As shown in FIG. 6 which is an enlarged view of the detection unit 52 in FIG. 5, the detection unit 52 includes a capacitor 37, an insulating film 73, a first wiring 75, a second wiring 77, an insulating film 79, And an absorption layer 81.
The capacitor 37 is provided above the second support layer 64 and includes a first electrode 85, a pyroelectric body 87, and a second electrode 89.
The first electrode 85 is provided on the upper side of the second support layer 64. The pyroelectric body 87 is provided on the opposite side of the first electrode 85 from the second support layer 64 side, that is, on the upper side of the first electrode 85. The second electrode 89 is provided on the opposite side of the pyroelectric body 87 from the first electrode 85 side, that is, on the upper side of the pyroelectric body 87.
In the present embodiment, a configuration in which iridium, iridium oxide, and platinum are stacked in this order as the first electrode 85 and the second electrode 89 is employed.
As a material of the pyroelectric material 87, lead zirconate titanate (PZT), PZTN obtained by adding niobium (Nb) to PZT, or the like can be used.

The insulating film 73 is provided on the opposite side of the capacitor 37 from the support layer 61 side, that is, on the upper side of the capacitor 37. The insulating film 73 covers the capacitor 37 from above. As a material of the insulating film 73, for example, silicon oxide or silicon nitride can be employed.
A contact hole 74 a is provided in the insulating film 73 at a portion overlapping the first electrode 85. In addition, a contact hole 74 b is provided in the insulating film 73 at a portion overlapping the second electrode 89.
The first wiring 75 and the second wiring 77 are provided on the opposite side of the insulating film 73 from the capacitor 37 side, that is, on the insulating film 73. The first wiring 75 is electrically connected to the first electrode 85 through the contact hole 74a. The second wiring 77 is electrically connected to the second electrode 89 through the contact hole 74b. In addition, as a material of the 1st wiring 75 and the 2nd wiring 77, metals, such as aluminum, respectively can be employ | adopted.

The insulating film 79 is provided above the first wiring 75 and the second wiring 77, and covers the first wiring 75, the second wiring 77, and the capacitor 37 from above. The first wiring 75 and the second wiring 77 are separated from each other. An insulating film 79 is interposed between the first wiring 75 and the second wiring 77 that are separated from each other. For this reason, the insulation between the 1st wiring 75 and the 2nd wiring 77 is ensured. As a material of the insulating film 79, for example, silicon oxide or silicon nitride can be employed.
The absorption layer 81 is provided on the upper side of the insulating film 79 in a region overlapping the capacitor 37 in plan view. The absorption layer 81 has a function of absorbing infrared rays that enter the detection element 31 from above the detection element 31. As a material of the absorption layer 81, a nitride of aluminum nitride, titanium aluminum, or the like can be employed in addition to silicon oxide or silicon nitride. In the present embodiment, silicon oxide and silicon nitride are employed as the material of the absorption layer 81.

As shown in FIG. 5, the first wiring 75 extends from the region overlapping the recess 56 to the outside of the region overlapping the recess 56. The second wiring 77 also extends from the region overlapping the recess 56 to the outside of the region overlapping the recess 56.
The imaging device 19 is provided with a plurality of via wirings 91. In the present embodiment, two via wirings 91 are provided for one detection element 31. In the following, when each of the two via wirings 91 corresponding to one detection element 31 is identified, the two via wirings 91 are represented as a via wiring 91a and a via wiring 91b, respectively.
The via wiring 91 a is electrically connected to the first electrode 85 through the first wiring 75. The via wiring 91 b is electrically connected to the second electrode 89 through the second wiring 77.
The via wiring 91 a is provided outside the region overlapping the recess 56 in plan view, and penetrates the element substrate 51 from the support layer 61 to the second surface 53 b of the substrate 53. The via wiring 91 b is also provided outside the region overlapping the recess 56 in plan view, and penetrates the element substrate 51 from the support layer 61 to the second surface 53 b of the substrate 53.

As shown in FIG. 7, the detection element 31 having the above configuration is electrically connected to the above-described IC 29 through a via wiring 91a and a via wiring 91b. Thereby, the imaging unit 5 is configured.
The IC 29 is provided with a plurality of pads 95. The plurality of pads 95 are electrically connected to the readout circuit 23, the selection circuit 21 (FIG. 2), and the like, respectively.
In the detection element 31, the first electrode 85 is electrically connected to the pad 95 of the IC 29 through the first wiring 75 and the via wiring 91 a. The second electrode 89 is electrically connected to the pad 95 of the IC 29 through the second wiring 77 and the via wiring 91b.
Therefore, the first electrode 85 and the second electrode 89 of the detection element 31 can be electrically connected to the readout circuit 23 and the selection circuit 21 in the IC 29, respectively.

  The plurality of pads 95 are respectively provided corresponding to one via wiring 91 in the imaging device 19. That is, one pad 95 is provided for one via wiring 91. Hereinafter, when a plurality of pads 95 are identified by the via wiring 91a and the via wiring 91b, the pad 95 corresponding to the via wiring 91a is referred to as a pad 95a, and the pad 95 corresponding to the via wiring 91b is referred to as a pad 95b. It is written.

IC29 has the 1st surface 97a and the 2nd surface 97b which is a surface on the opposite side to the 1st surface 97a. The pad 95a and the pad 95b are provided on the first surface 97a. By stacking the imaging device 19 and the IC 29 on each other, the connection between the imaging device 19 (detection element 31) and the IC 29 is achieved. The connection between the imaging device 19 and the IC 29 is achieved by stacking the imaging device 19 and the IC 29 in a state where the second surface 53b of the imaging device 19 and the first surface 97a of the IC 29 face each other. . Then, the electrical connection between the detection element 31 and the IC 29 is achieved by electrically connecting the via wiring 91a and the pad 95a and the via wiring 91b and the pad 95b through solder or the like. Connection is achieved.
As described above, the imaging unit 5 and the IC 29 are stacked to save the space of the imaging unit 5.

Here, the detection part 52 is provided in the island part 118 supported by the beam 117, as shown in FIG. An opening 119 is provided outside the island portion 118 in a region overlapping the recess 56 (FIG. 5). The opening 119 communicates with the cavity 67 (FIG. 5).
As shown in FIG. 8, which is a cross-sectional view taken along the line CC in FIG. 4, the first wiring 75 passes from the upper side of one beam 117 to a region that overlaps the concave portion 56 and a region that overlaps the concave portion 56. It extends outward. Similarly, the second wiring 77 extends from the region overlapping the recess 56 to the outside from the region overlapping the recess 56 through the upper side of the other beam 117.

In the detection element 31 having the above configuration, the absorption layer 81 absorbs infrared rays irradiated from the upper side of the detection element 31. The absorption layer 81 that has absorbed infrared rays generates heat in accordance with the amount of infrared rays that have been absorbed. The heat generated by the absorption layer 81 is transmitted to the capacitor 37.
In the capacitor 37, the electrical characteristics change according to the transferred heat. The amount of infrared rays can be detected by this change in electrical characteristics. In the present embodiment, the amount of polarization of the pyroelectric body 87 of the capacitor 37 changes. That is, in the present embodiment, the amount of infrared light can be detected by a change in the polarization amount of the pyroelectric body 87, which is one of the electrical characteristics.

A method for manufacturing the imaging device 19 will be described.
In the method for manufacturing the imaging device 19, first, as shown in FIG. 9A, the intermediate layer 55 a is formed on the first surface 53 a of the substrate 53. The intermediate layer 55a can be formed by using a CVD (Chemical Vapor Deposition) method to form a silicon oxide film.
Next, as shown in FIG. 9B, a recess 56 is formed on the opposite side of the intermediate layer 55a from the substrate 53 side. Thereby, the intermediate layer 55 can be formed from the intermediate layer 55a. The recess 56 can be formed by utilizing a photolithography method and an etching method.
Next, as shown in FIG. 9C, a protective layer 57 is formed on the opposite side of the intermediate layer 55 from the substrate 53 side, that is, on the intermediate layer 55. The protective layer 57 can be formed by forming a film of aluminum oxide using a CVD method, a sputtering method, or the like.

Next, as shown in FIG. 10A, the sacrificial layer 103 is formed on the side of the protective layer 57 opposite to the intermediate layer 55 side, that is, on the upper side of the protective layer 57. The sacrificial layer 103 can be formed by using a CVD method to form a silicon oxide film. At this time, the recess 56 is filled with the sacrificial layer 103. The sacrificial layer 103 is formed to a thickness exceeding the depth of the recess 56.
Next, as shown in FIG. 10B, the sacrificial layer 103a in the recess 56 of the sacrificial layer 103 is left, and the other part 103b of the sacrificial layer 103 is removed using a CMP (Chemical Mechanical Polishing) method. To do.

Next, as shown in FIG. 10C, the first support layer 63 is formed on the side opposite to the substrate 53 side of the protective layer 57, that is, on the upper side of the protective layer 57. In forming the first support layer 63, first, a zircon film is formed by utilizing a sputtering method. The zircon film is then subjected to thermal oxidation. Thereby, the 1st support layer 63 comprised with a zirconium oxide can be formed.
Following the formation of the first support layer 63, as shown in FIG. 10D, the openings 104a and 104b are formed in the protective layer 57 and the first support layer 63. The opening 104a and the opening 104b can be formed by utilizing a photolithography method and an etching method. The opening 104a and the opening 104b are provided in regions overlapping the via wiring 91a and the via wiring 91b (FIG. 5), respectively, in plan view.

Next, as shown in FIG. 11A, a second support layer 64 is formed on the opposite side of the first support layer 63 from the substrate 53 side, that is, on the first support layer 63. By the second support layer 64, the opening 104a and the opening 104b are filled.
The second support layer 64 can be formed by using a CVD method to form a film in which a silicon oxide layer and a silicon nitride layer are stacked.
Next, as illustrated in FIG. 11B, the through hole 105 a and the through hole 105 b that penetrate the substrate 53, the intermediate layer 55, and the second support layer 64 are formed. The through hole 105 a and the through hole 105 b penetrate from the second support layer 64 to the second surface 53 b of the substrate 53, respectively. Further, the through hole 105a and the through hole 105b are respectively provided in regions overlapping the opening 104a and the opening 104b in plan view. The through hole 105a and the through hole 105b can be formed by utilizing a photolithography method and an etching method.

Next, an insulating film (not shown) is formed on the inner side surfaces of the through hole 105a and the through hole 105b by using a CVD method using silicon oxide, silicon nitride, or the like.
Next, as shown in FIG. 11C, a via wiring 91a and a via wiring 91b are formed inside each of the through hole 105a and the through hole 105b.
The via wiring 91a and the via wiring 91b are formed by an electrolytic plating method. At this time, the via wiring 91a and the via wiring 91b are formed by forming a base layer as a base for plating and then performing electrolytic plating on the base layer. In the present embodiment, copper plating is employed as the plating.

Next, as shown in FIG. 12A, the first electrode 85 is formed on the second support layer 64. The first electrode 85 may be formed by forming a metal film by a sputtering method and then patterning the metal film by utilizing a photolithography method and an etching method.
Next, as shown in FIG. 12B, the pyroelectric body 87 is formed on the upper side of the first electrode 85, and then the second electrode 89 is formed on the upper side of the pyroelectric body 87.
In the formation of the pyroelectric body 87 and the second electrode 89, first, a film that covers the first electrode 85 is formed on the upper side of the first electrode 85 by applying and heating a material that is the material of the pyroelectric body 87. To do.
Next, a metal film is formed on the upper side of the film formed of the material of the pyroelectric body 87 by a sputtering method.
Next, a film formed of the material of the pyroelectric body 87 and a metal film formed on the upper side of the film are patterned by utilizing a photolithography method and an etching method. Thereby, the pyroelectric body 87 and the second electrode 89 are formed, and the capacitor 37 can be formed.

Next, as shown in FIG. 12C, an insulating film 73 is formed on the upper side of the capacitor 37. The insulating film 73 can be formed by forming a film that covers the capacitor 37 by a CVD method and then patterning the film by utilizing a photolithography method and an etching method. At the time of this patterning, a contact hole 74a and a contact hole 74b are also formed.
Next, as shown in FIG. 13A, the first wiring 75 and the second wiring 77 are formed. The first wiring 75 and the second wiring 77 can be formed by forming a metal film by a sputtering method and then patterning the metal film using a photolithography method and an etching method.
Next, as shown in FIG. 13B, an opening 119 is formed in the support layer 61. Note that FIG. 13B corresponds to a cross section taken along line CC in FIG. Thereby, the opening part 119 and the beam 117 are formed. The opening 119 can be formed by utilizing a photolithography method and an etching method.

Next, as illustrated in FIG. 13C, an insulating film 79 that covers the first wiring 75, the second wiring 77, and the capacitor 37 is formed above the first wiring 75 and the second wiring 77. The insulating film 79 can be formed by forming a film that covers the first wiring 75, the second wiring 77, and the capacitor 37 by a CVD method, and then patterning the film using a photolithography method and an etching method.
Next, an absorption layer 81 is formed on the insulating film 79 in a region overlapping the capacitor 37 in plan view. The absorption layer 81 can be formed by forming a laminated film of silicon oxide and silicon nitride by a CVD method and then patterning the laminated film by utilizing a photolithography method and an etching method.

Next, the sacrificial layer 103a in the recess 56 is removed while protecting the absorption layer 81, whereby the cavity 67 shown in FIGS. 5 and 7 is formed. The sacrificial layer 103a can be removed by utilizing a photolithography method and an etching method. At this time, the first support layer 63 prevents the etchant from entering from the concave portion 56 side to the capacitor 37 side in the etching process of the sacrificial layer 103a (FIG. 13C). That is, the first support layer 63 functions as a protective layer that protects the detection unit 52 from the etchant in the etching process of the sacrificial layer 103a. In the etching process of the sacrificial layer 103a, the first support layer 63 can also be used as an etching stop layer due to a difference in etching rate between the sacrificial layer 103a and the first support layer 63.
With the above, the imaging device 19 shown in FIG. 5 can be manufactured.

  In the present embodiment, the support layer 61 includes a first support layer 63 containing zircon oxide. Zircon oxide is one of materials having higher rigidity than silicon oxide and silicon nitride. For this reason, the rigidity of the support layer 61 can be increased as compared with a support layer made of silicon oxide, silicon nitride, or the like. Thereby, it can suppress low that the support layer 61 bends or dents to the cavity part 67 side. For this reason, since it can be made easy to avoid that the cavity part 67 narrows, it can be made easy to avoid that the thermal isolation | separation function of the cavity part 67 is impaired. As a result, the detection performance of the detection element 31 can be easily improved.

From another viewpoint, the first support layer 63 can reduce the thickness of the support layer 61 while ensuring the same rigidity as the support layer made of silicon oxide, silicon nitride, or the like.
Zircon oxide is a material having a lower thermal conductivity than silicon nitride. For this reason, in this embodiment, compared with the support layer containing silicon nitride, it is possible to easily suppress heat loss. For this reason, since it can be made easy to avoid that the thermal isolation | separation function of the cavity part 67 is impaired, the improvement of the detection performance of the detection element 31 can be made still easier.

In the present embodiment, in the method for manufacturing the imaging device 19, after forming the opening 104 a and the opening 104 b in the first support layer 63, a through hole is formed in a region overlapping the opening 104 a and the opening 104 b. A method of forming the 105a and the through hole 105b is adopted.
Zircon oxide is a material whose etching rate in an etchant in etching treatment for silicon or silicon oxide is lower than that of silicon or silicon oxide. For this reason, if it is going to form the through-hole 105a and the through-hole 105b without forming the opening part 104a and the opening part 104b, efficiency will become very low.
In contrast, in the present embodiment, since the through hole 105a and the through hole 105b are formed after the opening 104a and the opening 104b are formed, the efficiency can be increased.

(Second Embodiment)
The detection element 31 in the second embodiment includes an element substrate 121 as shown in FIG. The detection element 31 in the second embodiment is the same as the detection element 31 in the first embodiment except that the element substrate 51 (FIG. 5) in the first embodiment is replaced with the element substrate 121 shown in FIG. It has the same composition as. For this reason, in 2nd Embodiment, about the same structure as 1st Embodiment, the code | symbol same as 1st Embodiment is attached | subjected and detailed description is abbreviate | omitted.

As shown in FIG. 14, the element substrate 121 includes a substrate 53, a support layer 61, and via wiring 91. In the element substrate 121, the intermediate layer 55 (FIG. 5) in the first embodiment is omitted. Further, in the element substrate 121, the opening 119 (FIG. 4) in the first embodiment is omitted. For this reason, the beam 117 and the island part 118 are not formed in the element substrate 121.
In the second embodiment, as shown in FIG. 14, an opening 123 is provided in a region overlapping the detection unit 52 of the substrate 53. The opening 123 penetrates between the first surface 53 a and the second surface 53 b of the substrate 53. In the imaging unit 5, a space surrounded by the opening 123, the first support layer 63, and the first surface 97 a of the IC 29 is configured as a cavity 67.

A method for manufacturing the imaging device 19 in the second embodiment will be described.
In the method for manufacturing the imaging device 19, first, as shown in FIG. 15A, the support layer 61 is formed on the first surface 53 a of the substrate 53. The substrate 53 has a second surface 53c. The second surface 53c is a surface opposite to the first surface 53a, that is, a surface on the back surface side of the first surface 53a. Later, the second surface 53c side of the substrate 53 is polished, and the second surface 53b shown in FIG. 14 appears. Details of the polishing will be described later.
In forming the support layer 61, first, the first support layer 63 is formed on the first surface 53 a of the substrate 53. In the formation of the first support layer 63, a zircon film is formed using a sputtering method, and then the zircon film is thermally oxidized. Thereby, the 1st support layer 63 comprised with a zirconium oxide can be formed.
Following the formation of the first support layer 63, the second support layer 64 is formed on the upper side of the first support layer 63, that is, on the opposite side of the first support layer 63 from the substrate 53 side. The second support layer 64 can be formed by using a CVD method to form a film in which a silicon oxide layer and a silicon nitride layer are stacked.

Following the formation of the support layer 61, as shown in FIG. 15B, the first electrode 85 is formed on the second support layer 64. The first electrode 85 may be formed by forming a metal film by a sputtering method and then patterning the metal film by utilizing a photolithography method and an etching method.
Next, as shown in FIG. 15C, the pyroelectric body 87 is formed on the upper side of the first electrode 85, and then the second electrode 89 is formed on the upper side of the pyroelectric body 87.
In the formation of the pyroelectric body 87 and the second electrode 89, first, a film that covers the first electrode 85 is formed on the upper side of the first electrode 85 by applying and heating a material that is the material of the pyroelectric body 87. To do.
Next, a metal film is formed on the upper side of the film formed of the material of the pyroelectric body 87 by a sputtering method.
Next, a film formed of the material of the pyroelectric body 87 and a metal film formed on the upper side of the film are patterned by utilizing a photolithography method and an etching method. Thereby, the pyroelectric body 87 and the second electrode 89 are formed, and the capacitor 37 can be formed.

Next, as illustrated in FIG. 15D, the opening 125 a and the opening 125 b are formed in the support layer 61. The opening 125a and the opening 125b can be formed by utilizing a photolithography method and an etching method. The opening 125a and the opening 125b are provided in regions overlapping the via wiring 91a and the via wiring 91b (FIG. 14), respectively, in plan view.
Next, as shown in FIG. 16A, an insulating film 73 is formed on the upper side of the capacitor 37. The insulating film 73 can be formed by forming a film that covers the capacitor 37 by a CVD method and then patterning the film by utilizing a photolithography method and an etching method. At the time of this patterning, a contact hole 74a and a contact hole 74b are also formed.
Next, as shown in FIG. 16B, the first wiring 75 and the second wiring 77 are formed. The first wiring 75 and the second wiring 77 can be formed by forming a metal film by a sputtering method and then patterning the metal film using a photolithography method and an etching method.

At this time, the opening 125 a of the support layer 61 is filled with the first wiring 75. Further, the opening 125 b of the support layer 61 is filled with the second wiring 77.
Next, as illustrated in FIG. 16C, an insulating film 79 that covers the first wiring 75, the second wiring 77, and the capacitor 37 is formed above the first wiring 75 and the second wiring 77. The insulating film 79 can be formed by forming a film that covers the first wiring 75, the second wiring 77, and the capacitor 37 by a CVD method, and then patterning the film using a photolithography method and an etching method.
Next, as illustrated in FIG. 16D, an absorption layer 81 is formed on the upper side of the insulating film 79 in a region overlapping the capacitor 37 in plan view. The absorption layer 81 can be formed by forming a laminated film of silicon oxide and silicon nitride by a CVD method and then patterning the laminated film by utilizing a photolithography method and an etching method.

Next, as shown in FIG. 17A, the second surface 53b appears by thinning the substrate 53 from the second surface 53c side. The substrate 53 can be thinned by grinding with a grinder, a grinding machine, or the like, or by using a CMP method. In addition, when making the board | substrate 53 thin, the board | substrate 53, the detection part 52, etc. are protected by providing a support substrate to the board | substrate 53 from the upper side of the detection part 52. FIG.
Next, as shown in FIG. 17B, a through hole 127a and a through hole 127b penetrating the substrate 53 are formed. The through hole 127a and the through hole 127b penetrate from the second surface 53b of the substrate 53 to the first surface 53a, respectively. Further, the through hole 127a and the through hole 127b are respectively provided in regions overlapping the opening 125a and the opening 125b in plan view. The through hole 127a and the through hole 127b can be formed by utilizing a photolithography method and an etching method.

Next, an insulating film (not shown) is formed on each inner side surface of the through hole 127a and the through hole 127b by using a CVD method using silicon oxide, silicon nitride, or the like.
Next, as shown in FIG. 17C, the via wiring 91a and the via wiring 91b are formed inside each of the through hole 127a and the through hole 127b.
The via wiring 91a and the via wiring 91b are formed by an electrolytic plating method. At this time, the via wiring 91a and the via wiring 91b are formed by forming a base layer as a base for plating and then performing electrolytic plating on the base layer. In the present embodiment, copper plating is employed as the plating.

Next, as shown in FIG. 17D, an opening 123 is formed in the substrate 53. The opening 123 can be formed by utilizing a photolithography method and an etching method. The opening 123 can be formed by performing an etching process on the substrate 53 from the second surface 53b side. At this time, the first support layer 63 prevents the etchant in the etching process of the substrate 53 from entering the capacitor 37 side from the opening 123 side in the formation of the opening 123. That is, the first support layer 63 functions as a protective layer that protects the detection unit 52 from the etchant in the etching process of the substrate 53. Further, in the etching process of the substrate 53, the first support layer 63 can be used as an etching stop layer due to a difference in etching rate between the substrate 53 and the first support layer 63.
Then, the imaging device 19 can be manufactured by removing the support substrate (not shown) after the opening 123 is formed.

In the second embodiment, the same effect as in the first embodiment can be obtained.
In the second embodiment, since the intermediate layer 55 in the first embodiment can be omitted, the thickness of the imaging device 19 can be easily reduced. For this reason, in 2nd Embodiment, size reduction of the imaging device 19 is achieved.
In the second embodiment, the etching process of the sacrificial layer 103a in the first embodiment can be omitted, so that the manufacturing process can be simplified. In the second embodiment, since the etching process of the sacrificial layer 103a in the first embodiment can be omitted, the depth of the cavity 67 can be easily increased. As a result, even if the support layer 61 is bent or dented toward the cavity 67, it can be easily avoided that the cavity 67 is narrowed, so that the thermal separation function of the cavity 67 is impaired. Can make it easier to avoid. For this reason, the detection performance of the detection element 31 can be easily improved.
In the first embodiment and the second embodiment, the substrate 53 corresponds to the base, the IC 29 corresponds to the circuit board, and the imaging unit 5 corresponds to the imaging module.

  In the second embodiment, after the support layer 61 is formed on the substrate 53, the capacitor 37 is formed on the support layer 61, and then the opening 125a and the opening 125b are formed on the support layer 61. Yes. However, the order of forming the capacitor 37 and forming the opening 125a and the opening 125b is not limited to this. As the order of forming the capacitor 37 and forming the opening 125a and the opening 125b, the order in which the capacitor 37 is formed after the opening 125a and the opening 125b are formed may be employed.

(Drive assist device)
A driving support device that is one of electronic devices using the camera 1 will be described.
As shown in FIG. 18, which is a block diagram showing the main configuration, the driving support apparatus 400 in the present embodiment includes a processing unit 211, a camera 1, a yaw rate sensor 213, a vehicle speed sensor 215, a brake sensor 217, and a speaker. 219 and a display device 221.
The processing unit 211 has a CPU (Central Processing Unit) that controls the driving support apparatus 400.
The camera 1 detects infrared rays in a predetermined imaging area outside the vehicle.
The yaw rate sensor 213 detects the yaw rate of the vehicle.
The vehicle speed sensor 215 detects the traveling speed of the vehicle.
The brake sensor 217 detects the presence or absence of a driver's brake operation.

For example, the processing unit 211 detects an object such as an object and a pedestrian around the host vehicle based on an infrared image around the host vehicle obtained by imaging by the camera 1. Then, the processing unit 211 determines that the host vehicle is the target based on the detection result of the target object and the detection signal relating to the traveling state of the host vehicle detected by the yaw rate sensor 213, the vehicle speed sensor 215, and the brake sensor 217. When it is determined that there is a possibility of contact, an alarm is output via the speaker 219 or the display device 221.
As shown in FIG. 19, the camera 1 is disposed near the center in the vehicle width direction at the front portion of the automobile 223. The display device 221 may employ a configuration having a HUD (Head Up Display) 225 or the like that displays various types of information at a position that does not hinder the driver's forward view in the front window.

(Security equipment)
A security device that is one of electronic devices using the camera 1 will be described.
As shown in FIG. 20, which is a block diagram showing the main configuration, the security device 410 according to the present embodiment includes a camera 1, a human sensor 231, a motion detection processing unit 233, a human sensor detection processing unit 235, The image compression unit 237, the communication processing unit 239, and the control unit 241 are included.
The camera 1 images the monitoring area.
The human sensor 231 detects an intruder into the monitoring area.
The motion detection processing unit 233 processes the image data output from the camera 1 to detect a moving body that has entered the monitoring area.
The human sensor detection processing unit 235 performs detection processing of the human sensor 231.
The image compression unit 237 compresses the image data output from the camera 1 by a predetermined method.
The communication processing unit 239 transmits compressed image data, intruder detection information, and the like, and receives various setting information from the external device to the security device 410.
The control unit 241 includes a CPU that performs condition setting, processing command transmission, and response processing for each processing unit of the security device 410.

The motion detection processing unit 233 includes a buffer memory (not shown), a block data smoothing unit to which an output of the buffer memory is input, and a state change detection unit to which an output of the block data smoothing unit is input. Then, the state change detection unit of the motion detection processing unit 233 has the same image data even in different frames taken with a moving image if the monitoring area is stationary. A change in state is detected by utilizing the difference in image data.
As shown in FIG. 21, the security device 410 is provided with a camera 1 and a human sensor 231 under the eaves. Then, the camera 1 images the monitoring area 243 and the human sensor 231 detects the detection area 245.

(Game equipment)
A game machine that is one of electronic devices using the camera 1 will be described.
As shown in FIG. 22, the game device 420 in this embodiment includes a controller 251, a main body 253, a display 255, an LED module 257, and an LED module 258. In the game machine 420, the player 259 can play the game by holding the controller 251 with one hand.
As illustrated in FIG. 23, the controller 251 includes an imaging information calculation unit 261, an operation switch 263, an acceleration sensor 265, a connector 267, a processor 269, and a wireless module 271.

The imaging information calculation unit 261 includes a camera 1 and an image processing circuit 273 for processing image data captured by the camera 1.
The image processing circuit 273 processes the infrared image data obtained from the camera 1, detects a high-luminance portion, detects the position of the center of gravity and the area thereof, and outputs these data.
The processor 269 outputs operation data from the operation switch 263, acceleration data from the acceleration sensor 265, and high-luminance partial data as a series of control data. The wireless module 271 modulates a carrier wave having a predetermined frequency with this control data, and outputs it as a radio signal from the antenna 275.
Note that data input through the connector 267 provided in the controller 251 is also processed by the processor 269 in the same manner as the above-described data, and is output as control data via the wireless module 271 and the antenna 275.

  In the game device 420, when the camera 1 of the controller 251 is directed toward the screen 277 of the display 255, the camera 1 detects infrared rays output from the two LED modules 257 and the LED module 258 installed in the vicinity of the display 255. Then, the controller 251 acquires the position and area information of the two LED modules 257 and the LED module 258 as high luminance point information. Data on the position and size of the bright spot is transmitted from the controller 251 to the main body 253 wirelessly and received by the main body 253. When the player 259 moves the controller 251, the data on the position and size of the bright spot changes. Using this, the main body 253 can acquire an operation signal corresponding to the movement of the controller 251. Then, the game device 420 can advance the game according to the operation signal.

(Body temperature measuring device)
A body temperature measurement device that is one of electronic devices using the camera 1 will be described.
As shown in FIG. 24, the body temperature measurement device 430 in the present embodiment includes a camera 1, a body temperature analysis device 281, an information communication device 283, and a cable 285.
The camera 1 captures an image of a predetermined target area, and transmits the image information of the captured subject 287 to the body temperature analyzer 281 via the cable 285.
The body temperature analysis device 281 includes an image reading processing unit 288 and a body temperature analysis processing unit 289. The image reading processing unit 288 reads the heat distribution image from the camera 1. The body temperature analysis processing unit 289 creates a body temperature analysis table based on the data from the image reading processing unit 288 and the image analysis setting table.
The body temperature analysis processing unit 289 transmits body temperature information transmission data to the information communication device 283 based on the body temperature analysis table. The data for transmitting body temperature information may include predetermined data corresponding to abnormal body temperature. In addition, when it is determined that a plurality of subjects 287 are included in the target area, information on the number of subjects 287 and the number of people with abnormal body temperature may be included in the body temperature information transmission data.

(Specific substance detection device)
A specific substance detection device that is one of electronic devices using the camera 1 will be described.
As shown in FIG. 25, the specific substance detection apparatus 440 in the present embodiment includes a camera 1, a control unit 291, an irradiation light unit 293, an optical filter 295, and a display unit 297. In the specific substance detection apparatus 440, in the imaging device 19 of the camera 1, the wavelength range of infrared rays absorbed by the absorption layer 81 of the detection element 31 is set to the terahertz range.

The control unit 291 includes a system controller that controls the entire specific substance detection apparatus 440. This system controller controls the light source driving unit and the image processing unit included in the control unit 291.
The irradiation light unit 293 includes a laser device that emits terahertz light, which is an electromagnetic wave having a wavelength in the range of 100 μm to 1000 μm, and an optical system, and irradiates the person 298 to be inspected with terahertz light. The reflected terahertz light from the person 298 is received by the camera 1 through the optical filter 295 that allows only the spectral spectrum of the specific substance 299 to be detected.
The image signal generated by the camera 1 is subjected to predetermined image processing by the image processing unit of the control unit 291, and the image signal is output to the display unit 297. The presence of the specific substance 299 can be determined because the intensity of the received light signal varies depending on whether or not the specific substance 299 is present in the clothes of the person 298.

  DESCRIPTION OF SYMBOLS 1 ... Camera, 5 ... Imaging unit, 9 ... Control part, 19 ... Imaging device, 21 ... Selection circuit, 23 ... Reading circuit, 25 ... A / D conversion part, 27 ... Control circuit, 29 ... IC, 31 ... Detection element 37 ... Capacitor 52 ... Detection part 53 ... Substrate 61 ... Support layer 63 ... First support layer 64 ... Second support layer 67 ... Cavity part 75 ... First wiring 77 ... Second wiring DESCRIPTION OF SYMBOLS 81 ... Absorption layer, 85 ... 1st electrode, 87 ... Pyroelectric material, 89 ... 2nd electrode, 91, 91a, 91b ... Via wiring, 95, 95a, 95b ... Pad, 103, 103a ... Sacrificial layer, 104a, 104b ... Opening part, 105a, 105b ... Through hole, 123 ... Opening part, 125a, 125b ... Opening part, 127a, 127b ... Through hole, 400 ... Driving support device, 410 ... Security equipment, 420 ... Game equipment, 43 ... temperature measuring device, 440 ... specific substance detecting device.

Claims (13)

A detector whose characteristics change according to the amount of absorbed electromagnetic waves;
A support layer for supporting the detection unit;
A base that supports the support layer from a side opposite to the detection unit side of the support layer;
In the base, having a cavity provided in a region overlapping the detection unit,
The support layer includes a layer containing zircon oxide,
A detection element characterized by that. An electrode provided on the detection unit side of the base and electrically connected to the detection unit;
A wiring that penetrates the base from the side opposite to the detection unit side to the detection unit side, and is electrically connected to the electrode on the detection unit side of the base,
The detection element according to claim 1. The detection unit changes the electrical characteristics according to the amount of infrared rays included in the electromagnetic wave.
The detection element according to claim 1, wherein: A detector whose characteristics change according to the amount of absorbed electromagnetic waves;
A support layer including a layer containing zircon oxide and supporting the detection unit;
A base that supports the support layer from a side opposite to the detection unit side of the support layer;
In the base, a cavity provided in a region overlapping the detection unit;
An electrode provided on the detection unit side of the base and electrically connected to the detection unit;
A wiring that penetrates the base from the side opposite to the detection unit side to the detection unit side and is electrically connected to the electrode on the detection unit side of the base;
A circuit board that is provided on the opposite side of the base from the detection unit side and receives an electrical signal from the detection unit via the electrode and the wiring;
The circuit board has a terminal portion to which the signal is input,
The wiring is connected to the terminal portion;
A detection module characterized by that. A plurality of image sensors arranged in two directions intersecting each other;
The image sensor is
A detector whose characteristics change according to the amount of absorbed electromagnetic waves;
A support layer for supporting the detection unit;
A base that supports the support layer from a side opposite to the detection unit side of the support layer;
In the base, having a cavity provided in a region overlapping the detection unit,
The support layer includes a layer containing zircon oxide,
An imaging device characterized by that. An electrode provided on the detection unit side of the base and electrically connected to the detection unit;
A wiring that penetrates the base from the side opposite to the detection unit side to the detection unit side, and is electrically connected to the electrode on the detection unit side of the base,
The imaging device according to claim 5. The detection unit changes the electrical characteristics according to the amount of infrared rays included in the electromagnetic wave.
The imaging device according to claim 5 or 6. A plurality of image sensors arranged in two directions intersecting each other;
A circuit board for receiving electrical signals from the plurality of image sensors,
The image sensor is
A detector whose characteristics change according to the amount of absorbed electromagnetic waves;
A support layer including a layer containing zircon oxide and supporting the detection unit;
A base that supports the support layer from a side opposite to the detection unit side of the support layer;
In the base, a cavity provided in a region overlapping the detection unit;
An electrode provided on the detection unit side of the base and electrically connected to the detection unit;
A wiring penetrating from the side opposite to the detection unit side to the detection unit side and electrically connected to the electrode on the detection unit side of the base, and
The circuit board is
The terminal is provided on the opposite side of the base from the detection unit side, and has a terminal portion to which the signal received from the detection unit is input via the electrode and the wiring,
The wiring is connected to the terminal portion;
An imaging module characterized by that. It has the detection element according to any one of claims 1 to 3.
An electronic device characterized by that. It has a detection module according to claim 4.
An electronic device characterized by that. The imaging device according to any one of claims 5 to 7, comprising:
An electronic device characterized by that. The imaging module according to claim 8 is provided.
An electronic device characterized by that. An electromagnetic wave source that emits electromagnetic waves including infrared rays in the terahertz band toward the subject;
An imaging device that receives infrared rays of the terahertz band reflected by the subject and images the subject,
The imaging device has a plurality of imaging elements arranged in two directions intersecting each other,
The image sensor is
A detector whose characteristics change according to the amount of absorbed electromagnetic waves;
A support layer for supporting the detection unit;
A base that supports the support layer from a side opposite to the detection unit side of the support layer;
In the base, having a cavity provided in a region overlapping the detection unit,
The support layer includes a layer containing zircon oxide,
A terahertz camera.