JP2013171811A - Deposition device - Google Patents

Abstract

[PROBLEMS] To improve the uniformity of film thickness by a simple method in a cluster type film forming apparatus (evaporation apparatus or sputtering apparatus) in which a substrate is formed with a substantially vertical position. The purpose is to reduce running costs of crucibles, targets and the like.
A film forming apparatus according to the present invention includes a substrate holder that holds a substrate, a substrate transfer unit that transfers a substrate, a film forming unit that forms a film forming material, and a substrate transfer unit. The substrate that has been transferred with the film formation surface facing up is driven in a substantially vertical direction, and the substrate that is set up in the substantially vertical direction by the drive unit is transferred so as to pass through the film formation region of the film formation unit. And a transport unit. The substrate holder and the second substrate are aligned while the film is formed from the position facing the substrate with respect to the transported first substrate.
[Selection] Figure 1

Description

  The present invention relates to a film forming apparatus for manufacturing an organic EL or the like.

  In recent years, organic devices have attracted attention as a new industrial field. For example, organic EL has been developed as a display device or lighting device, an organic transistor as a driving element such as organic EL, electronic paper, or RFID, and an organic thin film solar cell as a solar cell. In particular, organic EL is required to increase the size of the production substrate along with the increase in the size of display devices and lighting devices. The substrate size is the substrate size from the current 4.5th generation production line (glass substrate dimensions: 730 mm x 920 mm). Will expand to 5.5th to 6th generation (substrate dimensions are 1300mm x 1500mm to 1500mm x 1800mm), which will be more than 2.9 times, and further to the 8th generation line (glass substrate dimensions: 2200mm x 2500mm) Expectation.

  As a substrate transport method in a vacuum deposition method generally used for organic EL film formation, there is a bottom surface transport that transports with a deposition surface facing down in order to perform deposition from below. In the lower surface conveyance, the lower surface is a vapor deposition surface and cannot hold the vapor deposition surface, and it is necessary to convey a frame portion that is not used as a display surface. Or, along with the increase in the size of the substrate, vertical transport has also been proposed in which the substrate is transported vertically in a tray. Known examples include Patent Document 1 and Patent Document 2.

  However, in the lower surface conveyance, since the conveyance of holding only the frame portion is carried, the deflection becomes larger as the substrate becomes larger. When the wrinkles are large, there is only a holding force for the frame portion, so a special holding mechanism is required. In addition, if the holding force is insufficient, the risk of falling increases. Further, the problem of wrinkles affects not only the conveyance but also the wrinkles of the shadow mask during the lower surface vapor deposition, and there is a problem that high-definition vapor deposition cannot be performed due to the influence of both.

  On the other hand, the vertical conveyance can solve the problem of wrinkles, but there is a problem that a conveyance tray is necessary, dust generation at the time of conveyance by the tray, and a tray collection / cleaning mechanism are necessary. In particular, when the tray is taken in and out between the atmosphere and the vacuum, the film attached to the tray absorbs moisture or is oxidized, and film peeling is likely to occur, which is likely to cause dust generation.

  In order to solve these problems, a cluster type in which a substrate is transferred to the upper surface by a transfer robot, the substrate is delivered in a vacuum chamber, and then the substrate is placed in a substantially vertical position, and a linear evaporation source is moved up and down to perform deposition. An organic EL manufacturing apparatus has been proposed. Thereby, the subject of using the board of a board and a tray can be solved. As a known example, Patent Document 3 is cited.

  Further, in Patent Document 3, in order to improve the tact, two alignment systems and processing delivery units are provided in the cluster type chamber, the right R line and the left L line, and one substrate is being aligned. Another method has been proposed in which another substrate is formed to reduce the cycle time by half.

  Increasing the size of display devices and lighting devices in addition to the above-mentioned transport problems has created new demands for cost reduction and resistance reduction of upper electrodes of organic EL. In particular, when manufacturing large televisions and lighting, the bottom emission structure uses a low-cost, high-reflectance Al electrode, and the top emission method uses a transparent material such as ITO or IZO instead of the conventional translucent film of Mg-Ag alloy. The electrode is required to be thickly formed up to about several hundred nm.

  Conventionally, Al electrodes have been formed by resistance heating vapor deposition, induction heating vapor deposition, and EB vapor deposition. However, all of them have been used for lower surface conveyance for lower surface vapor deposition. Moreover, since the substrate size was small, the film thickness uniformity was ensured by sufficiently separating the distance between the evaporation source and the substrate. However, in the film forming method in which the substrate is transferred to the upper surface and the substrate is set substantially vertically, it is difficult to hold the Al melt when the crucible is turned sideways, and special measures such as holding the crucible obliquely are required. In addition, Al melt has high reactivity and wettability, and leakage due to wetting from the crucible and alloying corrosion of the evaporation source due to it are likely to occur. For this reason, it is more difficult to hold the melt in the method of vapor deposition by moving the evaporation source. Therefore, it is desirable to fix the evaporation source to the cluster chamber wall. In this case, however, it is usually necessary to arrange the evaporation source two-dimensionally, resulting in a decrease in film thickness uniformity, complicated control, and increased cost. Moreover, since Al has a lower vapor pressure than Mg and Ag, a high deposition temperature is required, and there is a problem that it is more difficult to increase the film thickness.

  On the other hand, transparent oxides such as ITO and IZO are difficult to stably obtain a low resistance film by vapor deposition.

  Therefore, it is also desired to perform Al, ITO, or IZO by sputtering. Sputtering equipment is generally used for transporting the top surface of liquid crystal manufacturing equipment, etc., and a film formation method that stands the substrate substantially vertically. However, as the substrate size increases, the DC discharge method has a problem of increasing the film thickness distribution. A new film forming method such as an AC discharge method has been proposed (Patent Document 4).

The AC discharge method is a method in which a plurality of targets are arranged adjacent to each other, and two adjacent targets are paired to alternately set a cathode potential and an anode potential to perform sputtering alternately. Since the anode potential can be secured at a position adjacent to the target even when the substrate is enlarged, a relatively uniform discharge distribution can be obtained, and the film thickness distribution is improved.
However, since no discharge occurs between the target pair, a periodic film thickness distribution is generated in principle for each target pair. In addition, since a plurality of cathode electrodes are required because a plurality of targets are used, and an AC power supply is required for each target pair, the target cost, power supply, and apparatus cost increase compared to DC discharge or RF discharge using a single target. There are challenges.

JP 2006-147488 A JP 2004-259638 A JP 2010-62043 A JP 2005-290550 A

  The present invention is a cluster-type film forming apparatus (evaporation apparatus or sputtering apparatus) for forming a film with a substrate standing substantially vertically, improving the film thickness uniformity by a simple method, and the crucible for apparatus cost and evaporation source. The purpose is to reduce the running cost of the target and the like.

The features of the present invention for solving the above-described problems are as follows.
A film forming apparatus according to the present invention includes a substrate holder for holding a substrate, a substrate transfer unit for transferring a substrate, a film forming unit for forming a film forming material, and a film forming surface in a processing vacuum chamber by the substrate transfer unit. A drive unit that stands the substrate transferred in a substantially vertical direction with the substrate placed on the top surface, and a transfer unit that transports the substrate set up in the substantially vertical direction by the drive unit so as to pass through the film formation region of the film formation unit; Have. The substrate holder and the second substrate are aligned while the film is formed from the position facing the substrate with respect to the transported first substrate.

  In a cluster-type film formation apparatus that forms a film with a substrate substantially vertical, it is possible to provide a film formation apparatus that can improve film thickness uniformity even when the substrate is enlarged. Furthermore, it is not necessary to move the film forming unit (evaporation source or sputtering target) in the vacuum chamber, and it is easy to maintain the melt and maintain the degree of vacuum.

  Note that problems, configurations, and effects other than those described above will be clarified by the following description of embodiments.

It is the schematic (1) which shows the cluster type vapor deposition apparatus of one Example typically. It is the schematic which showed the positional relationship of the conveyance rail in the alignment operation | work of one Example, and the film-forming operation | work. It is the schematic which shows an example in the case of providing a deposition preventing board with the vapor deposition apparatus of one Example. It is the schematic which shows an example in the case of providing the angle restriction | limiting board which restrict | limits the film-forming area | region of vapor deposition material with the vapor deposition apparatus of one Example. It is the schematic which shows typically the cluster type sputtering device of one Example. It is the schematic (2) which shows typically the cluster type vapor deposition apparatus of one Example. It is the schematic (3) which shows the cluster type vapor deposition apparatus of one Example typically. It is the schematic (4) which shows the cluster type vapor deposition apparatus of one Example typically. It is the schematic of the film-forming apparatus which clustered and connected the vapor deposition apparatus and sputtering apparatus of one Example.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description shows specific examples of the contents of the present invention, and the present invention is not limited to these descriptions. Various modifications by those skilled in the art are within the scope of the technical idea disclosed in this specification. Changes and modifications are possible. In all the drawings for explaining the present invention, components having the same function are denoted by the same reference numerals, and repeated description thereof may be omitted.

<Embodiment 1: Embodiment 1 in which a substrate is conveyed by rail>
FIG. 1 is a schematic diagram (1) schematically showing the structure of a vapor deposition apparatus according to an embodiment of the present invention. As shown in FIG. 1, the horizontal direction of the processing vacuum chamber 10 and the vertical direction of the processing vacuum chamber 10 are defined. 1 schematically shows a gate transfer valve 20 and a substrate transfer unit stage (hereinafter, referred to as two stages) viewed from the transfer chamber in order to maintain a vacuum between the processing vacuum chamber 10 and a transfer chamber (not shown). (Abbreviated as substrate transfer section) 30 (two sets of 30-1 and 30-2), two sets of substrate holders 40 (two sets of 40-1 and 40-2), and drive section 50 for standing the substrates substantially vertically (2 sets of 50-1 and 50-2), 2 sets of transport rails (transport unit) 60 (2 sets of 60-1 and 60-2) for receiving and transporting (running) the substrate holder, evaporation source ( Film forming unit) 70. The substrate holder 40 may also serve as a patterning metal mask. In the present embodiment, an example of the substrate holder 40 that also serves as a lattice-patterned metal mask for each chamfer size is shown.

  Here, the substrate transfer unit 30 transfers the substrate 1 between the processing vacuum chamber 10 and the transfer chamber. Further, the transport rail 60 includes not only the rail but also a drive source for moving the substrate 1, but the details are omitted.

  Note that there are two transfer rails 60-1 and 60-2 on the substrate transfer unit 30 side and on the evaporation source 70 (chamber wall located opposite to the substrate transfer unit) side, respectively. There will be one. However, in the case where the substrate transfer unit 30 and the substrate holder 40 are in a horizontal state and can be aligned by exchanging the transfer chamber and the substrate, this embodiment can be used even if there are two rails, that is, a pair of rails on the left and right. Is possible (not shown).

  The substrate 1 carried into the substrate transfer unit 30-1 from the gate valve 20 is aligned with the substrate holder 40-1, and subsequently, the substrate 1 and the substrate holder 40 together with the substrate transfer unit 30-1 by the driving unit 50-1. -1 is set substantially vertically. Note that the alignment may be performed after the substrate 50 and the substrate holder 40-1 are set substantially vertically together with the substrate transfer unit 30-1 by the driving unit 50-1.

  Subsequently, the substrate 1 and the substrate holder 40-1 are separated from the substrate transfer unit 30-1, and set on the rail on the substrate transfer unit side of the transport rail 60-1. Thereafter, the transfer rail 60-1 moves in parallel to the evaporation source side, and the rail on the substrate transfer portion side of the transfer rail 60-1 is connected to the evaporation source side rail of the adjacent transfer rail 60-2. As a result, the rail penetrates to both ends in the processing chamber, and the substrate 1 can be conveyed (reciprocated) in front of the evaporation source 70 in a state where the substrate 1 is set on the substrate holder 40-1.

  It should be noted that during inter-back (reciprocating) conveyance, the film may be formed on both the forward path and the backward path, or may be formed only on either the forward path or the return path. When the film is formed on both of the forward and backward paths, a thicker film can be formed by forming two layers. When the film is formed only on either the forward or backward path, a uniform film quality can be obtained. There is an effect that becomes easy. Below, it demonstrates as an example which forms into a film in both the outward path | routes.

  FIG. 2 shows an outline of the transfer method during the alignment operation and film formation operation, and the positional relationship between the transfer rails 60-1 and 60-2 at that time. By transferring the two transfer rails 60 in the opposite directions (substrate transfer unit side and evaporation source side), the transfer of the aligned substrate holder 40 and the transfer of the backing in the processing chamber can be realized simultaneously. .

  The evaporation source 70 is fixedly arranged at the center of the outer wall of the chamber facing the substrate holder 40 which is set up substantially vertically, and is arranged so that the longitudinal direction of the evaporation source 70 is aligned with the vertical direction in the processing vacuum chamber 10. The evaporation source 70 has a structure in which the height is larger than the substrate 1 and the width is smaller than the substrate 1. In this embodiment, the evaporation source 70 is arranged at the center of the outer wall of the chamber, but it may not be at the center as long as it can be deposited.

  By making the width of the evaporation source 70 smaller than the length in the transfer direction of the substrate 1 and transferring the substrate 1 along the transfer rail 60 in front of the evaporation source 70, the entire evaporation source 70 can form the entire surface of the substrate 1. Like that. At this time, it is possible to obtain high film thickness uniformity in the transport direction by keeping the transport speed of the substrate 1 constant. As the evaporation source 70, an integral linear evaporation source or a multi-evaporation source in which a plurality of evaporation sources are arranged in a vertical row is used. When using a multi evaporation source, the film thickness distribution in the vertical direction of the substrate is a superposition of the distribution from each evaporation source, but a uniform film can be obtained by appropriately arranging a film thickness correction plate (not shown). Thickness can be realized.

  Although the detailed description of the evaporation source 70 is omitted in other embodiments, the above-described configuration of the evaporation source 70 can also be adopted in the film forming apparatus of another embodiment.

  The left side of FIG. 2 forms a film of the first substrate transferred by the transfer unit 30-1 (first substrate transfer unit) and transports the film to the transfer unit 30-1 (first substrate transfer unit). In the meantime, the substrate holder 40-2 and the second substrate are aligned by the transfer unit 30-2 (second substrate transfer unit).

During the deposition of the first substrate 1 by the inter-back deposition, the substrate transfer unit 30-2 unloads the substrate 1 previously formed from the gate valve 20 and loads a new substrate 1 into the substrate holder 40. -2 is started.

  On the other hand, the first substrate 1 and the substrate holder 40-1 that have completed the film formation are moved to the substrate transfer unit 30-1 side, and then are horizontally tilted, so that the first substrate 1 is transferred to the transfer chamber via the gate valve 20. It is carried out to. Then, a new substrate 1 is carried in. At the same time, as shown on the right side of FIG. 2, the deposition of the interlayer on the substrate holder 40-2 after the alignment is started.

  By repeating the above cycle, it is possible to simultaneously perform alignment and interlayer film formation in one processing chamber, which can be halved compared to an apparatus that processes alignment and film formation one by one in tact time. .

  FIG. 3 shows an example in which the deposition preventing plate 80 is provided by a vapor deposition apparatus. During the alignment between the new substrate 1 and the substrate holder 40-2, as shown in FIG. 3, the deposition film is deposited on the substrate holder 40-1 so as not to adhere to the substrate 1 being aligned. The plate 80 is set beside the substrate holder 40-2 (it may be between the substrate holder 40-2 and the evaporation source 70). Then, as the film formation on the substrate holder 40-1 is completed, the deposition preventing plate 80 is returned to a position where it does not interfere with the transfer of the substrate 1, etc., and the substrate holder 40-2 together with the substrate transfer unit 30-2 is substantially vertical. Then, it is cut off from the board transfer section 30-2 and set on the rail on the board transfer section side of the transport rail 60-2.

  FIG. 4 shows an example in which the angle limiting plate 90 is provided in the evaporation source 70. When alignment is performed after the substrate 1 and the substrate holder 40-2 are set substantially vertically together with the substrate transfer unit 30-2 by the driving unit 50-2 during the film formation of the substrate holder 40-1, the deposition preventing plate 80 is used. Instead, as shown in FIG. 4, it is only necessary to prevent the film from adhering to the substrate 1 during alignment by attaching an angle limiting plate 90 for limiting the film formation region of the vapor deposition material to the evaporation source 70.

  Although description is omitted in other embodiments, the deposition apparatus 80 of the other embodiments can also include the above-described deposition preventing plate 80 and the angle limiting plate 90.

<Embodiment 2: Embodiment in which film forming unit is used as sputtering source>
FIG. 5 is a schematic view schematically showing the structure of the sputtering apparatus of one embodiment of the present invention. Since the configuration is the same except that the evaporation source 70 of Example 1 is changed to the sputtering source (film forming unit) 170, the description thereof is omitted. The sputtering source 170 is fixedly arranged at the center of the outer wall of the chamber facing the substrate holder 40 that is set up substantially vertically, and is arranged so that the longitudinal direction of the evaporation source 70 is aligned with the vertical direction in the processing vacuum chamber 10. The sputter source 170 has a structure in which the height is larger than the substrate and the width is smaller than the substrate. In this embodiment, the sputtering source 170 is arranged at the center of the outer wall of the chamber.

  By making the width of the sputter source 170 smaller than the length of the substrate in the transport direction and transporting the substrate 1 along the transport rail 60 in front of the sputter source 170, the entire sputter source 170 can form a film on the entire surface of the substrate 1. To. At this time, it is possible to obtain high film thickness uniformity in the transport direction by keeping the transport speed constant. As the substantially rectangular sputtering source 170, a parallel plate type magnetron sputtering is usually used, but a cylindrical rotary cathode can also be used. Since the parallel plate target is fixed to the chamber wall, magnets, cooling water, and power can be supplied from the atmosphere side. Moreover, since the magnet can be easily swung, the utilization efficiency of the target can be increased.

<Embodiment 3: Embodiment 2 in which substrate is transported by rail>
In the third embodiment, unlike the first and second embodiments, the first substrate delivered by the delivery unit 30-1 (first substrate delivery unit) is formed into a film, and the delivery unit 30-2 (second product). An example of in-line film formation in which the substrate holder 40-2 and the second substrate are aligned by the transfer unit 30-1 (first substrate transfer unit) while the film is transferred to the substrate transfer unit) and film formation is performed. To do.

  FIG. 6 is a schematic diagram (3) schematically showing the structure of the vapor deposition apparatus according to the embodiment of the present invention. Here, an example of a vapor deposition apparatus is shown, but if the evaporation source is replaced with a sputtering source, a similar transfer method can be used in the sputtering apparatus.

  As shown in FIG. 6, the horizontal direction of the processing vacuum chamber 10 and the vertical direction of the processing vacuum chamber 10 are defined. 6 schematically shows a gate valve 20 and two left and right substrate transfer portions 30 (30-1 and 30-2) for maintaining a vacuum between the processing vacuum chamber 10 and a transfer chamber (not shown). 2 sets), 2 sets of substrate holders 40 (2 sets of 40-1 and 40-2), a drive unit 50 (2 sets of 50-1 and 50-2) for raising the substrate substantially vertically, a substrate holder Is constituted by a double transport rail 60 (two sets of 60-3 and 60-4) and an evaporation source 70. In the case of a sputtering apparatus, a sputtering source 170 is disposed instead of the evaporation source 70. The substrate holder 40 may also serve as a patterning metal mask. In the present embodiment, an example of the substrate holder 40 that also serves as a lattice-patterned metal mask for each chamfer size is shown.

  The substrate 1 carried into the one delivery unit 30-1 from the gate valve 20 is aligned with the substrate holder 40-1, and then the substrate 1 and the substrate holder 40-1 are made substantially vertical by the drive unit 50-1. Can be stood. Alternatively, the alignment may be performed after the substrate 1 and the substrate holder 40-1 are set substantially vertically by the driving unit 50-1.

  Subsequently, the substrate holder 40-1 is set on the rear transfer rail 60-4 (processing chamber wall surface side) of the two transfer rails. The transfer rail 60-4 on which the substrate 1 is set penetrates to both ends in the processing chamber, and the substrate 1 can be transferred in-line (one way) in front of the evaporation source 70. The first substrate 1 and the substrate holder 40-1 are deposited by the evaporation source 70 while being transported from the back to the front in the horizontal direction.

  During film formation of the first substrate 1, the next substrate is carried into the delivery unit 30-1, and is set up substantially vertically together with the substrate holder 40-2 by the driving unit 50-1, and then transferred to the transport rail 60-4. . Thereafter, while the next substrate 1 and substrate holder 40-2 are transported in the horizontal direction from the front to the back (opposite to the first substrate), a film is formed by the evaporation source 70.

  On the other hand, the first substrate 1 and the substrate holder 40-1 after film formation are moved to the transport rail 60-3, and the first substrate 1 and the substrate holder 40-1 are laid down horizontally by the driving unit 50-2. The first substrate 1 is taken out to the transfer unit 30-2 and further taken out to the transfer chamber through the gate valve 20.

  The remaining substrate holder 40-1 is again stood substantially vertically by the driving unit 50-2, and is transported from the front to the back on the transport rail 60-3 to the substrate receiving position.

  By repeating the above cycles, loading, substrate alignment with the substrate holder, film formation, substrate unloading, and substrate holder recovery can be realized in a loop, and continuous film formation is performed in the cluster chamber. It becomes possible.

<Embodiment 4: Embodiment 3 in which substrate is conveyed by rail>
In the fourth embodiment, similarly to the first embodiment, the first substrate transferred by the transfer section 30-1 (first substrate transfer section) is formed, and the transfer section 30-1 (first substrate) is formed. This is an example in which the substrate holder 40-2 and the second substrate are aligned by the delivery unit 30-2 (second substrate delivery unit) while being conveyed to the delivery unit). The difference from the third embodiment is that the conveyance rail is configured by only one of the conveyance rails 60-5.

  FIG. 7 is a schematic view (4) schematically showing the structure of the vapor deposition apparatus according to the embodiment of the present invention. Here, an example of a vapor deposition apparatus is shown, but if the evaporation source is replaced with a sputtering source, a similar transfer method can be used in the sputtering apparatus.

  As shown in FIG. 7, the horizontal direction of the processing vacuum chamber 10 and the vertical direction of the processing vacuum chamber 10 are defined. 7 schematically shows a gate valve 20 and two substrate transfer portions 30 (30-1 and 30-2) on the left and right sides in order to maintain a vacuum between the processing vacuum chamber 10 and a transfer chamber (not shown). 2 sets), 2 sets of substrate holders 40 (2 sets of 40-1 and 40-2), a drive unit 50 (2 sets of 50-1 and 50-2) for raising the substrate substantially vertically, a substrate holder It is comprised with the conveyance rail 60-5 and the evaporation source 70 which receive and drive | work. In the case of a sputtering apparatus, a sputtering source 170 is disposed instead of the evaporation source 70. The substrate holder 40 may also serve as a patterning metal mask. In the present embodiment, an example of the substrate holder 40 that also serves as a lattice-patterned metal mask for each chamfer size is shown.

  The substrate 1 carried into the one delivery unit 30-1 from the gate valve 20 is aligned with the substrate holder 40-1, and then the substrate 1 and the substrate holder 40-1 are made substantially vertical by the drive unit 50-1. Can be stood. Alternatively, the alignment may be performed after the substrate 1 and the substrate holder 40-1 are set substantially vertically by the driving unit 50-1.

  Subsequently, the substrate holder 40-1 is set on the transport rail 60-5. The transfer rail 60-5 on which the substrate 1 is set penetrates to both ends in the processing chamber, so that the substrate 1 can be transferred back and forth in front of the evaporation source 70.

  It should be noted that during inter-back (reciprocating) conveyance, the film may be formed on both the forward path and the backward path, or may be formed only on either the forward path or the return path. When the film is formed on both of the forward and backward paths, a thicker film can be formed by forming two layers. When the film is formed only on either the forward or backward path, a uniform film quality can be obtained. There is an effect that becomes easy. Below, it demonstrates as an example which forms into a film in both the outward path | routes.

  First, a film is formed by the evaporation source 70 while the substrate 1 and the substrate holder 40-1 are transported from the back to the front in the horizontal direction. Subsequently, the substrate 1 and the substrate holder 40-1 are transported while forming a film from the front to the back in the horizontal direction. After the film formation is completed, the first substrate 1 and the substrate holder 40-1 are laid down horizontally by the driving unit 50-1, the first substrate 1 is taken out to the transfer unit 30-1, and further conveyed through the gate valve 20. Take out into the chamber. The remaining substrate holder 40-1 is again set up almost vertically by the driving unit 50-1, and waits for alignment with the next substrate.

  During the deposition of the first substrate 1, the next substrate is carried into the transfer unit 30-2, and is set up substantially vertically together with the substrate holder 40-2 by the driving unit 50-2, and thereafter, does not overlap the first substrate 1. The timing is adjusted to the transport rail 60-5. Thereafter, the next substrate 1 and the substrate holder 40-2 are transported in the horizontal direction from the front to the back (opposite to the first substrate), deposited by the evaporation source 70, and further transported from the back to the front while returning. Both are formed into a film.

  By repeating the above cycles, loading, substrate alignment with the substrate holder, film formation, substrate unloading, and substrate holder recovery can be realized in a loop, and continuous film formation is performed in the cluster chamber. It becomes possible.

<Example 5: Embodiment in which a substrate is transferred by a robot arm>
FIG. 8 is a schematic diagram (5) schematically showing the structure of the vapor deposition apparatus of one embodiment of the present invention. Here, an example of a vapor deposition apparatus is shown, but if the evaporation source is replaced with a sputtering source, a similar transfer method can be used in the sputtering apparatus. As shown in FIG. 8, the horizontal direction of the processing vacuum chamber 10 and the vertical direction of the processing vacuum chamber 10 are defined.

  The vapor deposition apparatus in FIG. 8 generally includes a gate valve 20 and two substrate transfer units 30 (30−) as viewed from the transfer chamber in order to maintain a vacuum between the processing vacuum chamber 10 and the transfer chamber (not shown). 2 sets of 1 and 30-2), 2 sets of substrate holders 40 (2 sets of 40-1 and 40-2), and a drive unit 50 (2 of 50-1 and 50-2) for standing the substrate substantially vertically. Set), a two-axis two-axis robot arm 160 (two sets of 160-1 and 160-2) capable of transporting the substrate holder forward, backward, left and right, a guide (not shown) for moving the substrate holder forward, backward, left and right, An evaporation source 70 is used. The substrate holder 40 may also serve as a patterning metal mask. In the present embodiment, an example of the substrate holder 40 that also serves as a lattice-patterned metal mask for each chamfer size is shown.

  The substrate 1 carried into the substrate transfer unit 30-1 from the gate valve 20 is aligned with the substrate holder 40-1, and subsequently, the substrate 1 and the substrate holder 40 together with the substrate transfer unit 30-1 by the driving unit 50-1. -1 is set substantially vertically. Note that the alignment may be performed after the substrate 50 and the substrate holder 40-1 are set substantially vertically together with the substrate transfer unit 30-1 by the driving unit 50-1.

  Subsequently, the substrate transfer unit 30 moves the substrate 1 and the substrate holder 40-1 along the guide (not shown) in the chamber wall direction by the rotational movement of the first axis of the upper (or lower) 160-1 of the two-axis robot arm. Disconnect from -1. Thereafter, the substrate 1 is set on the substrate holder 40-1 by the rotational movement of the second axis of the arm 160-1, and in front of the evaporation source 70 along the chamber wall and a horizontal guide (not shown). Can be conveyed in an inter-back (reciprocal) manner.

  While the first substrate 1 is being vapor-deposited on the back, the other substrate transfer unit 30-2 unloads the previously formed substrate 1 from the gate valve 20 and loads a new substrate 1 into it. Alignment with the substrate holder 40-2 is started.

  On the other hand, the first substrate 1 and the substrate holder 40-1 after film formation are moved to the substrate transfer unit 30-1 side along a guide (not shown), and then are horizontally tilted so that the first substrate 1 is moved. It is carried out to the transfer chamber via the gate valve 20. Then, a new substrate 1 is carried in.

  Subsequently, the substrate transfer unit 30 moves the substrate 1 and the substrate holder 40-2 along a guide (not shown) in the chamber wall direction by the rotational movement of the first axis of the lower (or upper) 160-2 of the two-axis robot arm. Disconnect from -2. Thereafter, the evaporation source along the chamber wall and a horizontal guide (not shown) in a state where the substrate 1 is set on the substrate holder 40-2 by the rotational movement of the second axis of the two-axis robot arm 160-2. Inter back (reciprocating) conveyance is possible in front of 70.

  By repeating the above cycle, alignment and film formation can proceed simultaneously in one processing chamber, and can be halved compared to an apparatus that processes alignment and film formation one by one in tact time.

  In the fifth embodiment, similarly to the first and second embodiments, the first substrate transferred by the transfer unit 30-1 (first substrate transfer unit) is formed into a film, and the transfer unit 30-1 (first substrate) is formed. It has been described that the substrate holder 40-2 and the second substrate are aligned by the transfer unit 30-2 (second substrate transfer unit) while being transferred to the substrate transfer unit).

  However, the first substrate transferred by the transfer unit 30-1 (first substrate transfer unit) under the control as in the third embodiment is formed, and the transfer unit 30-2 (second substrate transfer) is formed. The substrate holder 40-2 and the second substrate may be aligned by the transfer unit 30-1 (first substrate transfer unit) while being conveyed to the transfer unit.

<Example 6: Embodiment of clustering of vapor deposition apparatus and sputtering apparatus>
FIG. 9 is a schematic diagram of an organic device manufacturing apparatus in which a vapor deposition apparatus and a sputtering apparatus according to an embodiment of the present invention are connected in a cluster. In this embodiment, an example of an organic EL device will be described. The organic EL device manufacturing apparatus includes a load chamber 180 for loading a substrate from a substrate cassette 230, a processing vacuum chamber 10, a load chamber 180, or the like of a vapor deposition apparatus or a sputtering apparatus for depositing an organic layer and a buffer layer and an upper electrode on the substrate. It is composed of a delivery chamber 190 installed between the processes (sealing process), a gate valve 20 between them, an unload chamber 200 for taking out the substrate from the vacuum, and a transfer robot 210 in the unload chamber 200. . Within the processing vacuum chamber 10, there are two substrate transfer sections 30, a drive section 50 (not shown) for standing the substrate substantially vertically, a substrate holder 40 (not shown), a substantially rectangular linear or multipoint The evaporation source 70 or the sputtering source 170 is used. The load chamber 180 and the unload chamber 200 include a transfer robot 210 that receives a substrate from the gate valve 20 and the transfer chamber 220 in order to maintain a vacuum, and rotates to carry the substrate into the transfer chamber 190. The transfer chamber 220 connects a sputtering apparatus, a vapor deposition apparatus, and the like. By clustering and connecting the processing vacuum chambers 10 via the transfer chamber 220, it is possible to form an upper electrode in which a deposited film and a sputtering film suitable for organic devices such as organic EL are stacked. Each delivery chamber 190 has a gate valve 20 at the front and rear, delivers the substrate from the load chamber 180 to each cluster of the processing vacuum chamber 10 while controlling the opening and closing of the gate valve 20 and maintaining a vacuum, and finally the unload chamber 200. Remove the substrate from In the organic EL manufacturing apparatus of the present embodiment, a total of 10 processing vacuum chambers 10 are connected, and the lower electrode, the hole injection layer, the hole transport layer, the red, green, and blue light emitting layers, the electron transport layer, the electron injection layer, and the buffer. Layers and upper electrodes can be deposited. A thin upper electrode film of Al or Mg-Ag alloy is formed by the vapor deposition apparatus in FIGS. 1 and 6, and then an Al upper electrode film is formed by the sputtering apparatus in FIG. By forming the upper electrode using Al, which is difficult to deposit at a high area and at high speed, it can be applied to a large substrate of 5.5th to 6th generation or more, and damage to the organic layer by sputtering can be reduced.

DESCRIPTION OF SYMBOLS 1 Substrate 10 Processing vacuum chamber 20 Gate valve 30 Substrate delivery part 40 Substrate holder 50 Driving part 60 Transport rail 70 Evaporation source 80 Deposition plate 90 Angle limiting plate 160 Two-axis robot arm 170 Sputter source 180 Load room 190 Delivery room 200 Unload Chamber 210 Transfer robot 220 Transfer chamber 230 Substrate cassette

Claims (16)

A film forming apparatus having a processing vacuum chamber,
A substrate holder for holding the substrate;
A board delivery section for delivering the board;
A film forming unit for forming a film forming material;
A drive unit that stands the substrate transferred by the substrate transfer unit in a state in which the film formation surface is an upper surface in the processing vacuum chamber in a substantially vertical direction;
A transport unit configured to transport a substrate set up in a substantially vertical direction by the driving unit so as to pass through a film formation region of the film formation unit;
A film forming apparatus for aligning the substrate holder and the second substrate while forming a film on the first substrate transferred by the transfer unit from a position facing the substrate by the film forming unit. The film forming apparatus according to claim 1,
Having the substrate delivery part in two places,
While the first substrate delivered by the first substrate delivery unit is deposited and transported to the first substrate delivery unit, the second substrate delivery unit aligns the substrate holder and the second substrate. A film forming apparatus for performing The film forming apparatus according to claim 2,
The film forming apparatus that reciprocates and conveys the film forming region of the film forming unit with respect to the first substrate. The film forming apparatus according to claim 2,
A film forming apparatus in which the transfer unit is configured by a rail. The film forming apparatus according to claim 1,
The transport unit is composed of a rail on the substrate delivery unit side and a rail on the film formation unit side,
The rail on the board delivery part side is movable in the left-right direction divided into a first rail and a second rail,
The rail on the film forming unit side is movable by dividing it into a third rail and a fourth rail in the left-right direction,
The first substrate aligned by the first substrate transfer unit is transported to the first rail, the first rail and the third rail are moved to the film forming unit side, and the second substrate The first rail and the fourth rail are connected by moving the rail and the fourth rail to the board delivery part side,
While the first substrate is transported back and forth on the first rail and the fourth rail to form a film and transport the film to the first substrate delivery unit, the second substrate delivery unit A film forming apparatus for aligning the substrate holder and the second substrate. The film forming apparatus according to claim 2,
A film forming apparatus in which the transfer unit is constituted by a two-axis robot arm. In the film-forming apparatus of Claim 6,
The biaxial robot arm is composed of two upper and lower stages, and each of the left and right substrate holders is operated by a film forming apparatus. The film forming apparatus according to claim 1,
Having the substrate delivery part in two places,
While the first substrate delivered by the first substrate delivery unit is formed and transported to the second substrate delivery unit, the first substrate delivery unit aligns the substrate holder and the second substrate. A film forming apparatus for performing The film forming apparatus according to claim 8.
The film transfer apparatus is configured to transfer the film formation region of the film formation unit to the first substrate in one way. The film forming apparatus according to claim 8.
A film forming apparatus in which the transfer unit is configured by a rail. The film forming apparatus according to claim 8.
A film forming apparatus in which the transfer unit is constituted by a two-axis robot arm. The film forming apparatus according to claim 11,
The biaxial robot arm is composed of two upper and lower stages, and each of the left and right substrate holders is operated by a film forming apparatus. In the film-forming apparatus in any one of Claims 1 thru | or 12,
The film forming unit is a film forming apparatus which is an evaporation source group in which a plurality of evaporation sources are vertically arranged. In the film-forming apparatus in any one of Claims 1 thru | or 12,
The film forming unit is a film forming apparatus that is a sputtering source using a vertically arranged flat cathode or a rotary cathode. In the film-forming apparatus in any one of Claims 1 thru | or 14,
A film forming apparatus having an open / close type adhesion preventing plate for preventing film adhesion to a substrate during alignment. In the film-forming apparatus in any one of Claims 1 thru | or 15,
A film forming apparatus having an angle limiting plate for preventing film adhesion to a substrate during alignment.