JP2013152113A - Thermal electromagnetic wave detector, manufacturing method thereof, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermal electromagnetic wave detector having an enhanced sensitivity.SOLUTION: A first substrate 15 includes an integrated circuit. A second substrate 16 is joined to the first substrate 15 at a second face which is on the rear side of a first face. The second substrate 16 is electrically connected to the integrated circuit through conductive terminals 17 and 85 arranged at the second face. The first face of the second substrate 16 is provided with one or more thermal electromagnetic wave detection element 18. The surface of the second substrate 16 is provided with conductive wiring 32a and 32b to form a current path. The thermal electromagnetic detection element 18 is inserted in the current path.

Description

  The present invention relates to a thermal electromagnetic wave detector, a manufacturing method thereof, an electronic device using the thermal electromagnetic wave detector, and the like.

  For example, as disclosed in Patent Document 1, an optical sensor using a thermal electromagnetic wave detector is generally known. In this thermal electromagnetic wave detector, an array of thermal electromagnetic wave detection elements is formed on the surface of a conductive electrode plate. The electrode plate is opposed to the surface of the integrated circuit board at the surface. Wiring is formed on the surface of the integrated circuit substrate corresponding to each thermal electromagnetic wave detection element. Individual thermal electromagnetic wave detection elements are connected to corresponding wirings by bumps.

US Pat. No. 5,565,046 JP 2008-103742 A

  In Patent Document 1, a current path is formed by an electrode plate and a bump. A thermal electromagnetic wave detecting element is inserted between the electrode plate and the bump. The heat capacity of the electrode plate is large. The heat capacity of the bump is large. Thus, when the heat capacity of the current path is large, the temperature change of the thermal electromagnetic wave detecting element becomes slow. As a result, the sensitivity of the thermal electromagnetic wave detector is lowered.

  According to at least one aspect of the present invention, a thermal electromagnetic wave detector with increased sensitivity can be provided.

  (1) One embodiment of the present invention includes a first substrate including an integrated circuit, a first surface and a second surface on the back side of the first surface, and the second surface is bonded to the first substrate, A second substrate electrically connected to the integrated circuit by a conductive terminal disposed on the second surface; a conductive wiring located on the first surface of the second substrate; and at least a part of the first surface. A conductor that penetrates the second substrate from the first surface to the second surface and electrically connects the conductive wiring and the conductive terminal to each other; and the conductive wiring positioned on the first surface of the second substrate. The present invention relates to a thermal electromagnetic wave detector provided with a thermal electromagnetic wave detection element connected to the.

  The thermal electromagnetic wave detecting element is inserted into the current path of the conductive wiring. The heat capacity of the conductive wiring is smaller than that of the conductive plate or bump. The heat capacity of the current path is reduced. As a result, the temperature change of the thermal electromagnetic wave detection element is accelerated. The thermal electromagnetic wave detecting element quickly follows the temperature change of the object. Thus, the sensitivity of the thermal electromagnetic wave detector can be increased.

  In addition, in the thermal electromagnetic wave detector, the second substrate is received by the first substrate on the second surface on the back side of the first surface. Since the thermal electromagnetic wave detection element is formed on the first surface, direct contact between the thermal electromagnetic wave detection element and the first substrate can be avoided. The thermal electromagnetic wave detection element can be configured without being restricted by rigidity. Various structures can be proposed for the thermal electromagnetic wave detection element.

  (2) The conductive wiring may be formed of a conductive material film. The conductive material film includes a thick film and a thin film. The volume of the conductive material film can be reduced to the maximum. Thus, the heat capacity of the current path is reduced to the maximum. As a result, the thermal electromagnetic wave detecting element can realize high reactivity with respect to heat.

  (3) The second substrate includes a base substrate and an insulating layer formed on a surface of the base substrate, and the conductor is formed in the insulating layer. An interlayer via having thermal conductance and connected to the conductive wiring; and a through-electrode passing through the base substrate and having a second thermal conductance larger than the first thermal conductance and connected to the conductive terminal; Can be provided.

  Heat is transferred from the surroundings to the interlayer vias and through electrodes. Since the second thermal conductance of the through electrode is larger than the first thermal conductance of the interlayer via, more heat is absorbed by the through electrode. Heat is efficiently released from the through electrode toward the conductive terminal. Thus, the through electrode contributes to cooling of the insulating layer.

  (4) The thermal electromagnetic wave detector may include a flat plate-shaped conductive material pad that has a surface parallel to the first surface inside the insulating layer and connects the through electrode to the interlayer via. . The conductive material pad absorbs a lot of heat from the surroundings. The heat of the conductive material pad efficiently moves to the through electrode. Heat is efficiently released from the through electrode. Thus, cooling of the insulating layer is further promoted.

  (5) The outline of the conductive material pad projected on the first surface may be located outside the outline of the thermal electromagnetic wave detecting element. Outside the contour of the thermal electromagnetic wave detecting element, the electromagnetic wave warms the insulating layer. If the conductive material pad spreads outside the projected image of the thermal electromagnetic wave detection element, the heat of the insulating layer can be absorbed by the conductive material pad. Since the thermal conductance of the conductive material pad is larger than the thermal conductance of the insulating layer, the conductive material pad can promote heat dissipation of the insulating layer. Thus, cooling of the insulating layer is further promoted.

  (6) The penetration electrode may be positioned inside the outline of the projected image of the thermal electromagnetic wave detection element. Heat is transmitted from the base substrate to the through electrode. Since the thermal conductance of the through electrode is larger than the thermal conductance of the base substrate, the through electrode can promote heat dissipation of the base substrate. According to such heat radiation, the temperature rise of the insulating layer located behind the thermal electromagnetic wave detection element can be suppressed. As a result, the thermal electromagnetic wave detection element can be separated from the surrounding thermal influence. The temperature change of the thermal electromagnetic wave detection element can surely reflect the temperature change of the object.

  (7) Instead of the above arrangement, the through electrode may be arranged at a position overlapping a projected image of a boundary surface between the structure and the surface of the second substrate. Depending on the combination of the structure and the second substrate, the rigidity of the second substrate can be increased. Therefore, if the through electrode is formed in such a part, even if the rigidity of the second substrate is reduced due to the influence of the through electrode, sufficient rigidity can be secured in the second substrate.

  (8) The thermal electromagnetic wave detector can be used by being incorporated in an electronic device. The electronic device may include a thermal electromagnetic wave detector and a control circuit that processes an output of the thermal electromagnetic wave detector. In the thermal electromagnetic wave detector, the current path of the second substrate is drawn by the conductive terminal on the second surface. Since the space for arranging the conductive terminals is not required on the first surface of the second substrate, the thermal electromagnetic wave detecting elements can be disposed in an array on the first surface of the second substrate with high density. Increasing the density of such a thermal electromagnetic wave detection element can contribute to higher image definition.

  (9) Another aspect of the present invention includes a first substrate including an integrated circuit, a first surface, and a second surface on the back side of the first surface, and the second surface is bonded to the first substrate. A second substrate electrically connected to the integrated circuit through a conductive terminal disposed on the second surface; a conductive wiring located on the first surface of the second substrate; and at least a part of the first substrate A conductor passing through the second substrate from a surface to the second surface and electrically connecting the conductive wiring and the conductive terminal to each other; and located on the first surface of the second substrate; The present invention relates to an electronic device including a thermal electromagnetic wave detection element connected to wiring and a processing circuit connected to the integrated circuit and processing an output of the integrated circuit.

  (10) Still another aspect of the present invention includes an electromagnetic wave source that emits electromagnetic waves in a terahertz band, a first substrate including an integrated circuit, a first surface, and a second surface on the back side of the first surface, A second substrate bonded to the first substrate at the second surface and electrically connected to the integrated circuit through a conductive terminal disposed on the second surface; and positioned on the first surface of the second substrate A conductive wire that extends at least partially from the first surface to the second surface of the second substrate and electrically connects the conductive wire and the conductive terminal to each other; and A thermal electromagnetic wave detecting element that is located on the first surface of the substrate and is connected to the conductive wiring and converts terahertz electromagnetic waves into electricity, and is connected to the integrated circuit to process the output of the integrated circuit The present invention relates to a terahertz camera including a processing circuit. In such a terahertz camera, high-definition images can be realized in accordance with the increase in the density of thermal electromagnetic wave detection elements.

  (11) Furthermore, in another aspect of the present invention, a conductive wiring formed on a first surface to form a current path is formed on a first substrate including an integrated circuit, and is formed on the first surface and inserted into the current path. A second substrate having a thermal electromagnetic wave detecting element to be bonded to the second surface on the back side of the first surface, and electrically connecting to the integrated circuit with a conductive terminal disposed on the second surface. A thermal electromagnetic wave in which a conductor extending at least from the first surface to the second surface and interconnecting the conductive wiring and the conductive terminal is formed inside the second substrate. The present invention relates to a method for manufacturing a detector.

  The second substrate is received by the first substrate on the second surface behind the first surface. Since the thermal electromagnetic wave detection element is formed on the first surface, direct contact between the thermal electromagnetic wave detection element and the first substrate can be avoided. The thermal electromagnetic wave detection element can be configured without being restricted by rigidity. Various structures can be proposed for the thermal electromagnetic wave detection element.

  (12) In forming the conductor, a method of manufacturing a thermal electromagnetic wave detector includes a step of forming an interlayer via while laminating an insulating layer on a surface of a material substrate, and the interlayer via on the surface of the insulating layer. Forming the conductive wiring connected to the substrate, and forming a through electrode connected to the interlayer via from the back surface of the material substrate.

  According to such a manufacturing process, the through electrode can be formed after the formation of the thermal electromagnetic wave detection element. While the thermal electromagnetic wave detection element is formed on the surface of the material substrate, the through electrode is formed on the back surface of the material substrate, so that the influence on the thermal electromagnetic wave detection element can be avoided in forming the through electrode. .

  (13) Instead of the above, in the method of manufacturing a thermal electromagnetic wave detector, in forming the conductor, a step of forming a through electrode from the surface of the material substrate, and laminating an insulating layer on the surface of the material substrate And forming an interlayer via connected to the through electrode, and forming the conductive wiring connected to the interlayer via on the surface of the insulating layer.

  According to such a manufacturing process, the through electrode can be formed prior to the formation of the thermal electromagnetic wave detection element. The thermal electromagnetic wave detecting element can be formed after the through electrode is formed. In forming the through electrode, the influence on the thermal electromagnetic wave detection element can be avoided.

1 is a cross-sectional view schematically showing a specific example of a thermal electromagnetic wave detector according to an embodiment of the present invention, that is, a photodetector package. It is an enlarged partial plan view of a sensor substrate. FIG. 3 is a composite vertical cross-sectional view showing a vertical cross section along line 3-3 in FIG. 2 and a vertical cross section along line 3′-3 ′. FIG. 4 is a vertical sectional view taken along line 4-4 of FIG. It is a partial see-through plan view of a sensor substrate. It is sectional drawing which shows the manufacturing method of a photodetector package, and shows the 1st wafer substrate notionally. FIG. 7 is a cross-sectional view conceptually showing a conductive material pad and an insulating layer corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing an interlayer via corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing interlayer vias stacked on interlayer vias, corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing a thermal detection element connected to an interlayer via corresponding to FIG. 6. It is sectional drawing which shows the manufacturing method of a photodetector package, and shows notionally the deep hole formed from the back surface of a 1st wafer substrate. FIG. 12 is a cross-sectional view conceptually showing a through electrode connected to a conductive material pad corresponding to FIG. 11. FIG. 12 is a cross-sectional view conceptually showing a connection terminal connected to the through electrode corresponding to FIG. 11. FIG. 7 is a cross-sectional view conceptually showing a sensor substrate bonded to a second wafer substrate corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing an air gap formed between the thermal detection element and the first wafer substrate, corresponding to FIG. 6. It is sectional drawing which shows the manufacturing method which concerns on other embodiment, and shows notionally the deep hole formed from the surface of a 1st wafer substrate. FIG. 17 is a cross-sectional view conceptually showing a conductive material pad corresponding to FIG. 16. FIG. 17 is a cross-sectional view conceptually showing an interlayer via corresponding to FIG. 16. FIG. 17 is a cross-sectional view conceptually showing interlayer vias stacked on interlayer vias, corresponding to FIG. 16. FIG. 17 is a cross sectional view conceptually showing a thermal detection element connected to the interlayer via, corresponding to FIG. 16. FIG. 17 is a cross-sectional view conceptually showing the through electrode exposed from the back surface of the first wafer according to the polishing process, corresponding to FIG. 16. FIG. 4 is a vertical sectional view corresponding to FIG. 3 and showing the arrangement of through electrodes according to another embodiment. It is an expanded partial sectional view of the photodetector package which shows roughly the electric conduction terminal concerning other embodiments. It is an enlarged partial sectional view of the 1st wafer substrate which shows roughly the insulating film formed in the surface of a base after formation of a deep hole in the 1st wafer substrate. FIG. 25 is an enlarged partial cross-sectional view of a first wafer substrate corresponding to FIG. 24 and schematically showing an opening continuous with a deep hole. FIG. 25 is an enlarged partial cross-sectional view of a first wafer substrate corresponding to FIG. 24 and schematically showing protruding through electrodes. It is an expanded partial sectional view of the photodetector package which shows roughly the electric conduction terminal concerning other embodiments. It is a perspective view which shows roughly the external appearance of the terahertz camera which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows the structure of a terahertz camera schematically. It is a block diagram which shows roughly the structure of the infrared camera which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of FA (factory automation) apparatus which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of the electric equipment (home appliance) in which the human sensitive sensor which concerns on one specific example of the electronic device using a photodetector package was incorporated. 1 is an external view of a vehicle schematically showing a configuration of a vehicle in which a driving support device according to a specific example of an electronic device using a photodetector package is incorporated. It is a block diagram which shows the structure of a driving assistance device roughly. It is a perspective view which shows roughly the external appearance of the game machine which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of the game machine controller which concerns on one specific example of the electronic device using a photodetector package.

  Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. The present embodiment described below does not unduly limit the contents of the present invention described in the claims, and all the configurations described in the present embodiment are essential as means for solving the present invention. Not necessarily.

(1) Overall Configuration of Photodetector Package FIG. 1 schematically shows a specific example of a thermal electromagnetic wave detector, that is, a photodetector package 11 according to an embodiment of the present invention. The photodetector package 11 includes a box-shaped housing 12. The housing 12 includes a housing body 13 and a cover 14 that closes the opening 13 a of the housing body 13. The housing body 13 and the cover 14 define a sealed internal space. The housing body 13 can be formed from, for example, an insulating ceramic. The cover 14 can be made of a material that is transparent to electromagnetic waves having a specific wavelength. Here, the cover 14 is made of, for example, silicon. The cover 14 can be transparent to infrared rays, for example. The cover 14 may be transmissive to electromagnetic waves in the terahertz band, for example. A vacuum can be established in the internal space.

  The housing 12 accommodates an integrated circuit (IC) substrate (first substrate) 15 and a sensor substrate (second substrate) 16. The IC substrate 15 includes an integrated circuit. The integrated circuit constitutes a readout circuit. The back surface of the IC substrate 15 is fixed to the bottom plate of the housing body 13 in the internal space of the housing 12. The IC substrate 15 may be bonded to the bottom plate with an adhesive, for example. The IC substrate 15 constitutes an IC chip. The sensor substrate 16 constitutes a sensor chip.

  The sensor substrate 16 is received on the surface of the IC substrate 15. The sensor substrate 16 is bonded to the surface of the IC substrate 15 on the back surface (second surface). Conductive terminals 17 are sandwiched between the sensor substrate 16 and the IC substrate 15 for bonding. The conductive terminal 17 electrically connects the sensor substrate 16 to a readout circuit in the IC substrate 15. Here, the conductive terminal 17 is formed of a bump. For example, gold bumps can be used as the bumps. The gold bump can be bonded to the IC substrate 15 by metal bonding or a solder material. In addition, a resin material may be used for joining the sensor substrate 16 and the IC substrate 15. In this case, contact may be maintained between the gold bump and the IC substrate 15. A solder bump may be used instead of the gold bump. One or more thermal electromagnetic wave detection elements, that is, thermal optical detection elements 18 are formed on the surface (first surface) of the sensor substrate 16.

  External terminals 21 are installed on the outer surface of the housing 12. The external terminal 21 is disposed on the outer surface of the bottom plate of the housing body 13. The external terminal 21 is formed from a conductive material. On the other hand, a relay pad 22 is installed on the inner surface of the housing 12. The relay pad 22 is disposed on the bottom plate of the housing body 13 in the internal space of the housing 12. The relay pad 22 is formed from a conductive material. The relay pad 22 and the external terminal 21 are connected to each other by a relay conductor 23. The relay conductor 23 passes through the bottom plate of the housing body 13. The relay conductor 23 is formed from a conductive material.

  The relay pad 22 is electrically connected to the IC substrate 15 by, for example, wire wiring 24. The wire wiring 24 connects the readout circuit to the relay pad 22. Thus, a signal path is formed between the readout circuit and the external terminal 21. Such a photodetector package 11 can be used by being fitted into a socket (not shown). The external terminal 21 is connected to the connection terminal of the socket. The socket can be mounted on a large printed circuit board as required.

FIG. 2 shows an enlarged partial plan view of the sensor substrate 16. A plurality of rows and columns of thermal detection elements 18 are arranged on the surface of the sensor substrate 16. That is, a matrix of the thermal detection elements 18 is formed. The individual thermal detection elements 18 can be compared with pyroelectric detection elements. The thermal detection element 18 includes an electromagnetic wave absorption film 25. The electromagnetic wave absorbing film 25 is formed from a material that absorbs a desired electromagnetic wave. The energy of the electromagnetic wave is accumulated according to the absorption of the electromagnetic wave. Here, silicon dioxide (SiO ₂ ) can be used as the material of the electromagnetic wave absorbing film 25. Silicon dioxide can store infrared thermal energy. The electromagnetic wave absorbing film 25 covers the pyroelectric capacitor 26. The pyroelectric capacitor 26 outputs an electrical signal according to the temperature change.

Individual thermal detection elements 18 are individually installed on the membrane 27. The membrane 27 has a three-layer structure of a silicon dioxide (SiO ₂ ) film, a silicon nitride (SiN) film, and a silicon dioxide (SiO ₂ ) film. The membrane 27 includes a flat plate-like support plate piece 28, a pair of arm pieces 29, and a pair of fixed pieces 31. The support plate piece 28 can be formed in a quadrilateral outline, for example. Here, the support plate piece 28 has, for example, a square outline. One end of the arm piece 29 is connected to the support plate piece 28 at a corner on a diagonal line. The arm pieces 29 extend from opposite corners along sides facing each other. A fixed piece 31 is connected to the other end of the arm piece 29. The fixed piece 31 is adjacent to the other diagonal corner. The electromagnetic wave absorbing film 25 is disposed on the surface of the support plate piece 28.

  Conductive wirings 32 a and 32 b are formed on the surface of the sensor substrate 16. The conductive wirings 32 a and 32 b form a current path on the surface of the membrane 27. The conductive wirings 32 a and 32 b enter the electromagnetic wave absorbing film 25 on the support plate piece 28 from the fixed piece 31 through the corresponding arm piece 29. As will be described later, a pyroelectric capacitor 26 is inserted in the current path under the electromagnetic wave absorbing film 25. Thus, the conductive wirings 32a and 32b are drawn out from the pyroelectric capacitor 26.

  As shown in FIG. 3, the pyroelectric capacitor 26 includes a pyroelectric body 33. The pyroelectric body 33 is formed of a dielectric material that exhibits a pyroelectric effect. For example, PZT (lead zirconate titanate) can be used as the dielectric. The pyroelectric body 33 produces a change in the amount of electric polarization in accordance with a change in temperature. Here, the pyroelectric material 33 is formed in a thin film.

  The pyroelectric capacitor 26 includes a lower electrode 34 and an upper electrode 35. The pyroelectric body 33 is sandwiched between the lower electrode 34 and the upper electrode 35. The lower electrode 34 is formed on the surface of the membrane 27. For example, the lower electrode 34 may have a three-layer structure of iridium (Ir), iridium oxide (IrOx), and platinum (Pt) sequentially from the surface of the membrane 27. The upper electrode 35 is formed on the surface of the pyroelectric body 33. The upper electrode 35 may have a three-layer structure of platinum (Pt), iridium oxide (IrOx), and iridium (Ir) in order from the pyroelectric body 33. A pyroelectric current is generated between the upper electrode 35 and the lower electrode 34 in accordance with the pyroelectric effect of the pyroelectric body 33. Heat is thus converted into an electrical signal.

  The pyroelectric capacitor 26 is covered with an insulating layer 36. A first contact hole 37 and a second contact hole 38 are formed in the insulating layer 36. The first contact hole 37 defines a space that penetrates the insulating layer 36 and contacts the lower electrode 34. The conductive wiring 32 a enters the first contact hole 37. Conductive wiring 32 a is connected to lower electrode 34. The second contact hole 38 defines a space that penetrates the insulating layer 36 and contacts the upper electrode 35. The conductive wiring 32 b enters the second contact hole 38. The conductive wiring 32 b is connected to the upper electrode 35. Thus, the pyroelectric capacitor 26 is inserted into the current path.

  The conductive wirings 32a and 32b can be formed of a conductive material film. The conductive material film includes a thick film and a thin film. The volume of the conductive material film can be reduced to the maximum. In this way, the heat capacity of the current path drawn from the thermal detection element 18 is reduced to the maximum.

  A heat transfer layer 39 is connected to the upper electrode 35. The heat transfer layer 39 spreads within the electromagnetic wave absorbing film 25. The heat transfer layer 39 is formed from a material having a higher thermal conductivity than the electromagnetic wave absorbing film 25, for example. As such a material, for example, a metal such as aluminum (Al) or titanium (Ti), or a metal compound such as aluminum nitride (AlN) or titanium nitride (TiN) can be used. The heat transfer layer 39 can efficiently transfer the heat generated in the electromagnetic wave absorption film 25 to the pyroelectric capacitor 26.

  Columns 41 are formed on the surface of the sensor substrate 16 for each of the fixed pieces 31 of all the membranes 27. The column 41 rises from the surface of the sensor substrate 16 with a sufficient height in the vertical direction. The fixed piece 31 of the membrane 27 is connected to the upper end of the column 41. Here, the pillar 41 and the membrane 27 constitute a structure that connects the thermal detection element 18 to the sensor substrate 16. At this time, since the membrane 27 is supported only by the fixed piece 31, a sufficiently thick gap is formed between the support plate piece 28 and the arm piece 29 of the membrane 27 and the surface of the sensor substrate 16. The thermal photodetecting element 18 is thermally separated from the surface of the sensor substrate 16 by the action of the gap.

  The sensor substrate 16 includes a base substrate 42 and an insulating layer 43. The base substrate 42 is formed by a base 44 and an insulating layer 45. The base 44 has a predetermined rigidity, for example. For example, a silicon substrate can be used as the base 44. The insulating layer 45 is laminated on the surface of the base body 44. The insulating layer 45 can be composed of a thin film of an insulating material. For example, silicon dioxide can be used as the insulating material.

  The base substrate 42 is formed with through electrodes 46 and 46a. The through electrodes 46, 46 a penetrate from the surface of the base substrate 42 to the back surface (back side of the surface) of the base substrate 42. The through electrodes 46 and 46a are made of a conductive material. Here, for example, copper can be used as the conductive material. A metal material other than copper may be used as the conductive material. An insulating layer 47 may be formed on the entire back surface of the base substrate 42. The insulating layer 47 can be formed from, for example, silicon dioxide. An opening is formed in the insulating layer 47 for each of the through electrodes 46 and 46a. The lower ends of the through electrodes 46 and 46a are exposed through the openings. Corresponding conductive terminals 17 are individually connected to the lower ends of the through electrodes 46 and 46a.

  A conductive material pad 48 is disposed on the surface of the base substrate 42 for each thermal detection element 18. The conductive material pad 48 is formed in a flat plate shape. The conductive material pad 48 extends parallel to the surface of the sensor substrate 16. The conductive material pad 48 is made of, for example, a metal material. Here, for example, copper can be used as the metal material. A material other than copper may be used as the metal material. The conductive material pad 48 is individually connected to the upper end of the corresponding through electrode 46.

  One or more insulating layers 43 are stacked on the surface of the base substrate 42. The insulating layer 43 can be formed from, for example, silicon dioxide. The insulating layer 43 covers the surface of the base substrate 42. The column 41 of the structure body can be integrated with the insulating layer 43. Corresponding to the lower electrode 34, one or more stages of interlayer vias 49 are formed inside the insulating layer 43 and the pillars 41. The lower end of the interlayer via 49 is connected to a conductive material pad 48. The upper end of the interlayer via 49 (the uppermost interlayer via 49 in the case of a plurality of stages) is connected to the conductive wiring 32a. In connection, the interlayer via 49 can penetrate the fixed piece 31 of the membrane 27. The interlayer via 49 is formed from a conductive material, for example. Here, for example, copper can be used as the conductive material. A metal material other than copper may be used as the conductive material. The conductive wiring 32 a, the interlayer via 49, the conductive material pad 48, and the through electrode 46 form a continuous conductor between the lower electrode 34 and the conductive terminal 17. This conductor connects the thermal detection element 18 and the corresponding conductive terminal 17 to each other.

  At this time, the interlayer via 49 is formed for each relatively thin insulating layer 43, and as a result, the cross-sectional diameter of the interlayer via 49 can be set to be relatively small. Therefore, the interlayer via 49 can have a relatively small thermal conductance (first thermal conductance). On the other hand, the through electrodes 46 and 46 a penetrate the base substrate 42. The base substrate 42 is given a predetermined rigidity. Therefore, the thickness of the base substrate 42 is set to be considerably larger than that of the insulating layer 43. As a result, the cross-sectional diameter of the through electrodes 46 and 46 a can be set sufficiently larger than that of the interlayer via 49. The through electrodes 46 and 46 a can have a thermal conductance (second thermal conductance) sufficiently larger than the thermal conductance of the interlayer via 49.

  The IC substrate 15 is formed of a base 51 and a laminated body 52 of insulating layers. The base 51 has, for example, a predetermined rigidity. For example, a silicon substrate can be used as the base 51. The laminated body 52 of insulating layers is laminated on the surface of the base 51. The insulating layer can be composed of a thin film of an insulating material. For example, silicon dioxide can be used as the insulating material.

  A readout circuit is constructed on the base 51. For example, impurities are diffused from the surface of the base 51 into the base 51 when the readout circuit is constructed. A circuit component 53 can be established on the surface of the base 51 in accordance with such impurity diffusion, oxide film, electrodes, and other formations. Examples of the circuit component 53 include a MOSFET (metal oxide semiconductor field effect transistor).

  Terminal pads 54 are formed on the surface of the multilayer body 52 for each conductive terminal 17. The terminal pad 54 is made of a conductive material. Here, a metal material such as copper can be used as the conductive material. Individual conductive terminals 17 are individually connected to corresponding terminal pads 54. Pattern wiring 55 and vias 56 are formed inside the multilayer body 52. The pattern wiring 55 and the via 56 are formed from a conductive material. Pattern wiring 55 and vias 56 connect terminal pads 54 to circuit components 53. Thus, a signal path is established between the circuit component 53 and the terminal pad 54.

  A relay pad 57 is further formed on the surface of the multilayer body 52. The relay pad 57 is made of a conductive material. Here, a metal material such as copper can be used as the conductive material. The relay pad 57 is connected to the readout circuit through the pattern wiring 55 and the via 56. The wire wiring 24 is coupled to the relay pad 57.

  As shown in FIG. 4, one or more interlayer vias 58 are formed inside the insulating layer 43 and the pillars 41 corresponding to the upper electrode 35. The lower end of the interlayer via 58 is connected to the pattern wiring 59. Here, one pattern wiring 59 can be commonly assigned to one row of thermal detection elements 18 in a matrix. The upper end of the interlayer via 58 is connected to the conductive wiring 32b. In connection, the interlayer via 58 can penetrate the fixed piece 31 of the membrane 27. The interlayer via 58 is formed from a conductive material, for example. Here, for example, copper can be used as the conductive material. A metal material other than copper may be used as the conductive material. The pattern wiring 59 is connected to one through electrode 46a. The conductive wiring 32b, the interlayer via 58, the pattern wiring 59, and the through electrode 46a form a continuous conductor between the upper electrode 35 and the conductive terminal 17. This conductor connects the thermal detection element 18 and the corresponding conductive terminal 17 to each other.

  As shown in FIG. 5, the conductive material pad 48 has a predetermined extent. For example, when the contour of the conductive material pad 48 is projected on a virtual plane including the surface of the membrane 27, the contour of the projected image 61 is positioned outside the contour of the thermal photodetection element 18, that is, the electromagnetic wave absorption film 25. At this time, the projection image 61 can be formed by superimposing the conductive material pad 48 on the virtual plane by the vertical movement of the conductive material pad 48. Here, the contour of the projected image 61 is located outside the contour of the electromagnetic wave absorbing film 25 on the three sides of the contour (quadrangle) of the electromagnetic wave absorbing film 25. The conductive material pad 48 can spread to the maximum extent as long as electrical insulation is ensured between the adjacent conductive material pads 48. As shown in FIG. 5, in the case where the conductive material pad 48 and the pattern wiring 59 for the upper electrode 35 are formed in the same plane, the pattern wiring 59 extends on one straight line and forms one line of thermal type. Since the interlayer vias 58 of the photodetecting elements 18 are connected one after another, an arrangement space for the pattern wiring 59 extending in a straight line between one row of conductive material pads 48 and one row of conductive material pads 48 is secured. Is done. Therefore, the contour of the projected image 61 remains on the inner side of the contour of the electromagnetic wave absorbing film 25 on one side of the contour of the electromagnetic wave absorbing film 25. In addition, if the conductive material pad 48 and the pattern wiring 59 for the upper electrode 35 are formed in different planes, the conductive material pad 48 is formed on the surface of the sensor substrate 16 for each thermal detection element 18. Can spread to the maximum in parallel planes.

  As shown in FIG. 5, the through electrodes 46 and 46a are arranged at predetermined positions. For example, when the outline of the thermal photodetection element 18 is projected on a virtual plane including the upper ends of the through electrodes 46 and 46a in the same manner, the upper end of the through electrode 46 is the outline of the projection image of the corresponding thermal photodetection element 18. Placed inside. For example, the upper end of the through electrode 46 can be concentrically arranged at the center of the contour of the electromagnetic wave absorbing film 25. At this time, the interval between the through electrode 46 a communicating with the upper electrode 35 and the through electrode 46 of the thermal detection element 18 can be set equal to the interval between the penetration electrodes 46 of the thermal detection element 18. In this way, all the through electrodes 46 and 46a can be arranged at equal intervals.

(2) Operation of Photodetector Package Next, the operation of the photodetector package 11 will be briefly described. When electromagnetic waves reach the photodetector package 11, electromagnetic waves having a specific wavelength (for example, infrared rays or terahertz band electromagnetic waves) pass through the cover 14 and reach the individual thermal detection elements 18. In the thermal detection element 18, electromagnetic waves are absorbed by the electromagnetic wave absorption film 25 and heat is generated in the electromagnetic wave absorption film 25. Heat is efficiently transferred to the pyroelectric body 33 by the action of the heat transfer layer 39. The temperature of the pyroelectric body 33 changes in accordance with such heat and electromagnetic waves directly irradiated. A change in the amount of electric polarization is generated in response to a change in temperature, and a pyroelectric current is generated. This pyroelectric current voltage is transmitted to the gate of the FET, for example. The voltage changes according to the change in the amount of electric polarization. Thus, for example, detection by the source follower circuit is performed. Temperature information can be obtained for each thermal detection element 18.

  The thermal detection element 18 is inserted in the current path of the conductive wirings 32a and 32b. The heat capacity of the conductive wirings 32a and 32b is smaller than that of the conductive plates and bumps. The heat capacity of the current path is reduced. As a result, the temperature change of the thermal detection element 18 is accelerated. The thermal detection element quickly follows the temperature change of the object. Thus, the sensitivity of the photodetector package 11 can be increased. In particular, the conductive wirings 32a and 32b are connected to the lower electrode 34 and the upper electrode 35 through the first and second contact holes 37 and 38, respectively. The contact hole can be formed with higher shape accuracy than, for example, a bump. Therefore, the heat capacity can be reliably reduced by the first and second contact holes 37 and 38. In addition, the conductive wirings 32a and 32b can be formed of a conductive material film. The volume of the conductive material film can be reduced to the maximum. Thus, the heat capacity of the current path is reduced to the maximum. As a result, the thermal detection element 18 can realize high reactivity to heat.

  In the photodetector package 11, the sensor substrate 16 is received by the IC substrate 15 on the back surface. Since the thermal detection element 18 is formed on the surface of the sensor substrate 16, direct contact between the thermal detection element 18 and the IC substrate 16 can be avoided. As a result, the thermal detection element 18 can be configured without being restricted by rigidity. Various structures can be proposed for the thermal detection element 18.

  In the photodetector package 11, heat is transmitted from the surroundings to the interlayer vias 49 and 58 and the through electrodes 46 and 46 a. Since the thermal conductance of the through electrodes 46 and 46a is larger than the thermal conductance of the interlayer vias 49 and 58, a large amount of heat is absorbed by the through electrodes 46 and 46a. Heat is efficiently released from the through electrodes 46 and 46 a toward the conductive terminal 17. Thus, the through electrodes 46 and 46 a contribute to cooling of the insulating layer 43.

  In addition, a conductive material pad 48 is connected to the through electrode 46. The conductive material pad 48 absorbs a lot of heat from the surroundings. The heat of the conductive material pad 48 is efficiently transferred to the through electrode 46. Heat is efficiently released from the through electrode 46. Thus, cooling of the insulating layer 43 is further promoted.

  For example, when the contour of the conductive material pad 48 is projected onto a virtual plane including the surface of the membrane 27, the contour of the projected image 61 is located outside the contour of the thermal photodetection element 18, that is, the electromagnetic wave absorbing film 25. The electromagnetic wave warms the insulating layer 43 outside the outline of the thermal detection element 18. Therefore, if the conductive material pad 48 spreads outside the projected image of the thermal detection element 18, the heat of the insulating layer 43 can be absorbed by the conductive material pad 48. Since the thermal conductance of the conductive material pad 48 is larger than the thermal conductance of the insulating layer 43, the conductive material pad 48 can promote heat dissipation of the insulating layer 43. Thus, cooling of the insulating layer 43 is further promoted.

  For example, when the outline of the thermal detection element 18 is projected on a virtual plane including the upper ends of the through electrodes 46 and 46a, the upper end of the penetration electrode 46 is located inside the outline of the projection image of the corresponding thermal detection element 18. Be placed. Heat is transmitted from the base substrate 42 to the through electrodes 46 and 46a. Since the thermal conductance of the through electrodes 46 and 46 a is larger than the thermal conductance of the base substrate 42, the through electrodes 46 and 46 a can promote heat dissipation of the base substrate 42. According to such heat radiation, the temperature rise of the insulating layer 43 located behind the thermal detection element 18 can be suppressed. Radiant heat of the insulating layer 43 is suppressed. As a result, the thermal detection element 18 can be separated from the surrounding thermal influence. The temperature change of the thermal detection element 18 can reliably reflect the temperature change of the object.

(3) Photodetector package manufacturing method (first embodiment)
Next, a method for manufacturing the photodetector package 11 will be described in detail. First, as shown in FIG. 6, a first wafer substrate (second substrate) 62 is prepared. The first wafer substrate 62 is composed of a disk-shaped base 63 and an insulating layer 64. For example, a silicon wafer can be used as the base 63. The insulating layer 64 is laminated on the surface of the base 63. The insulating layer 64 can be composed of a thin film of an insulating material. For example, silicon dioxide can be used as the insulating material.

  A conductive material pad 48 and a pattern wiring 59 are formed on the surface of the insulating layer 64. For example, a plating method can be used to form the conductive material pad 48 and the pattern wiring 59. The conductive material pad 48 and the pattern wiring 59 are formed in a predetermined outline.

  As shown in FIG. 7, subsequently, an insulating layer 65 is laminated on the surface of the insulating layer 64. The insulating layer 65 can be formed from, for example, silicon dioxide. For example, a sputtering method can be used for stacking the insulating layer 65. The insulating layer 65 covers the entire surface of the insulating layer 64. As a result, the conductive material pad 48 and the pattern wiring 59 are covered with the insulating layer 65. As shown in FIG. 8, interlayer vias 49 and 58 are formed in the insulating layer 65. For example, a plating method can be used for forming the interlayer vias 49 and 58. Interlayer vias 49 and 58 are individually connected to corresponding conductive material pads 48 and pattern wiring 55.

As shown in FIG. 9, an insulating layer 66 is further laminated on the surface of the insulating layer 65. The insulating layer 66 can be formed from, for example, silicon dioxide. For example, a sputtering method can be used for stacking the insulating layer 66. The insulating layer 66 covers the entire surface of the insulating layer 65. Interlayer vias 49 and 58 are covered with an insulating layer 66. Subsequently, a material film 67 of the membrane 27 is formed on the surface of the insulating layer 66. The material film 67 has a three-layer structure of a silicon dioxide (SiO ₂ ) film, a silicon nitride (SiN) film, and a silicon dioxide (SiO ₂ ) film. For example, a sputtering method can be used for forming the material film 67. The material film 67 covers the entire surface of the insulating layer 66. Interlayer vias 49 and 58 are further formed in the insulating layer 66 and the material film 67. For example, a plating method can be used for forming the interlayer vias 49 and 58. Interlayer vias 49 and 58 are stacked on corresponding interlayer vias 49 and 58. Thus, the interlayer vias 49 and 58 are formed while the insulating layers 65 and 66 are laminated on the surface of the first wafer substrate 62.

  Thereafter, as shown in FIG. 10, the thermal detection element 18 is formed. On the material film 67, the lower electrode 34, the pyroelectric body 33, and the upper electrode 35 are laminated. Conductive wirings 32 a and 32 b are formed on the material film 67. For the formation, for example, a plating method can be used. Conductive wirings 32a and 32b connect lower electrode 34 and interlayer via 49 to each other, and connect upper electrode 35 and interlayer via 58 to each other. Thus, on the surface of the material film 67, conductive wirings 32a and 32b that are drawn from the thermal detection element 18 and connected to the interlayer vias 49 and 58 are formed.

  Subsequently, the electromagnetic wave absorbing film 25 is formed on the material film 67. The electromagnetic wave absorbing film 25 covers the lower electrode 34, the pyroelectric body 33, the upper electrode 35, and part of the conductive wirings 32a and 32b. In forming the electromagnetic wave absorbing film 25, a heat transfer layer 39 is laminated in the electromagnetic wave absorbing film 25. Thereafter, the membrane 27 is cut out from the material film 67.

  When the thermal detection element 18 is thus formed on the first wafer substrate 62, a deep hole 68 is formed from the back surface of the first wafer substrate 62 as shown in FIG. In forming the deep hole 68, deep reactive ion etching (deep RIE) can be used. The deep hole 68 reaches the conductive material pad 48 and the pattern wiring 59. The deep hole 68 is filled with a conductive material. For filling, for example, a plating method can be used. In this way, through electrodes 46 and 46 a connected to the interlayer vias 49 and 58 are formed from the back surface of the first wafer substrate 62.

  As shown in FIG. 12, an insulating layer 69 is formed on the entire back surface of the first wafer substrate 62. The insulating layer 69 can be formed from, for example, silicon dioxide. For example, a sputtering method can be used for forming the insulating layer 69. The insulating layer 69 covers the entire back surface of the first wafer substrate 62. An opening 71 is formed in the insulating layer 69 for each of the through electrodes 46 and 46a. The through electrodes 46 and 46 a are exposed in the opening 71. Subsequently, as shown in FIG. 13, the conductive terminal 17 is formed on the surface of the insulating layer 69. Each conductive terminal 17 is connected to the corresponding through electrode 46, 46 a in the opening 71. In this way, a conductor that extends from at least the front surface to the back surface and connects the thermal detection element 18 and the corresponding conductive terminal 17 to each other is formed inside the first wafer substrate 62. Thereafter, individual sensor substrates 16, that is, sensor chips, are cut out from the first wafer substrate 62.

  As shown in FIG. 14, a second wafer substrate (first substrate) 72 is prepared. The second wafer substrate 72 includes a disc-shaped base 73 and a laminated body 74 of insulating layers. For example, a silicon wafer can be used as the base 73. A circuit component 53 is formed on the surface of the base 73. In the formation, ion implantation, oxide film formation, and electrode formation are performed. The laminated body 74 is laminated on the entire surface of the base 73. The insulating layer can be composed of a thin film of an insulating material. For example, silicon dioxide can be used as the insulating material. A sputtering method can be used in forming the insulating layer. Pattern wiring 55 and vias 56 are formed on the surface and inside of each insulating layer. Terminal pads 54 and relay pads 57 are formed on the surface of the laminate 74. For example, a plating method can be used to form the pattern wiring 55, the via 56, the terminal pad 54, and the relay pad 57. Thus, a readout circuit (integrated circuit) is formed on the second wafer substrate 72 for each specific region.

  The sensor substrate 16 is bonded to the second wafer substrate 72. The second wafer substrate 72 includes an integrated circuit. A matrix of the thermal detection elements 18 is formed on the surface (first surface) of the sensor substrate 16. The sensor substrate 16 is received by the second wafer substrate 72 on the back surface. The sensor substrate 16 is electrically connected to the readout circuit by a conductive terminal 17 disposed on the back surface of the sensor substrate 16. Here, the sensor substrate 16 is pressed against the second wafer substrate 72 for bonding. Since the thermal photodetection element 18 is formed on the surface of the sensor substrate 16, direct contact between the thermal photodetection element 18 and the second wafer substrate 72 can be avoided. As a result, the thermal detection element 18 can be configured without being restricted by rigidity. Various structures can be proposed for the thermal detection element 18.

  Thereafter, as shown in FIG. 15, the insulating layer 66 of the sensor substrate 16 is removed. The pillar 41 is left when the insulating layer 66 is removed. An etching process can be performed for such removal. As a result, a gap is formed between the membrane 27 and the insulating layer 65. The thermal detection element 18 is thermally separated from the insulating layer 65. Finally, each IC substrate 15 is cut out from the second wafer substrate 72. The IC substrate 15 is enclosed in the housing 12. Thus, the photodetector package 11 is manufactured.

(4) Photodetector package manufacturing method (second embodiment)
Next, another manufacturing method will be briefly described. As shown in FIG. 16, a first wafer substrate (second substrate) 76 is prepared. The first wafer substrate 76 includes a base body 77 and an insulating layer 78 in the same manner as the first wafer substrate 62 described above. A deep hole 79 is formed from the surface of the first wafer substrate 76. In forming the deep hole 79, deep reactive ion etching (deep RIE) can be used. The bottom of the deep hole 79 is disposed at a predetermined distance from the back surface of the first wafer substrate 76. As a result, a machining allowance 81 having a predetermined thickness is secured between the deep hole 79 and the back surface of the first wafer substrate 76. The deep hole 79 is filled with a conductive material. For filling, for example, a plating method can be used. Thus, the through electrodes 46 and 46 a are formed from the surface of the first wafer substrate 76.

  As shown in FIG. 17, a conductive material pad 48 and a pattern wiring 59 are formed on the surface of the insulating layer 78. For example, a plating method can be used to form the conductive material pad 48 and the pattern wiring 59. The conductive material pad 48 and the pattern wiring 59 are formed in a predetermined outline.

  As shown in FIG. 18, an insulating layer 82 is subsequently laminated on the surface of the insulating layer 78. The insulating layer 82 can be formed from, for example, silicon dioxide. For the lamination of the insulating layer 82, for example, a sputtering method can be used. The insulating layer 82 covers the entire surface of the insulating layer 78. As a result, the conductive material pad 48 and the pattern wiring 59 are covered with the insulating layer 82. As shown in FIG. 18, interlayer vias 49 and 58 are formed in the insulating layer 82. For example, a plating method can be used for forming the interlayer vias 49 and 58. Interlayer vias 49 and 58 are individually connected to corresponding conductive material pads 48 and pattern wiring 59.

As shown in FIG. 19, an insulating layer 83 is further laminated on the surface of the insulating layer 82. The insulating layer 83 can be formed from, for example, silicon dioxide. For the lamination of the insulating layer 83, for example, a sputtering method can be used. The insulating layer 83 covers the entire surface of the insulating layer 82. Interlayer vias 49 and 58 are covered with an insulating layer 83. Subsequently, a material film 84 of the membrane 27 is formed on the surface of the insulating layer 83. The material film 84 has a three-layer structure of a silicon dioxide (SiO ₂ ) film, a silicon nitride (SiN) film, and a silicon dioxide (SiO ₂ ) film. For example, a sputtering method can be used for forming the material film 84. The material film 84 covers the entire surface of the insulating layer 83. Interlayer vias 49 and 58 are further formed in the insulating layer 83 and the material film 84. For example, a plating method can be used for forming the interlayer vias 49 and 58. Interlayer vias 49 and 58 are overlapped with corresponding interlayer vias 49 and 58. Thus, the interlayer vias 49 and 58 connected to the through electrodes 46 and 46 a are formed while the insulating layers 82 and 83 are laminated on the surface of the first wafer substrate 76.

  Thereafter, as shown in FIG. 20, the thermal detection element 18 is formed in the same manner as described above. Conductive wirings 32 a and 32 b are formed on the material film 84. For the formation, for example, a plating method can be used. The conductive wirings 32a and 32b connect the lower electrode 34 and the interlayer via 49 to each other, and connect the upper electrode 35 and the interlayer via 58 to each other. Thus, on the surface of the material film 84, conductive wirings 32a and 32b that are drawn from the thermal detection element 18 and connected to the interlayer vias 49 and 58 are formed.

  As shown in FIG. 21, the back surface of the first wafer substrate 76 is polished. For example, chemical mechanical polishing (CMP) can be used for the polishing process. The grinding allowance 81 is removed by this polishing process. As a result, the lower ends of the through electrodes 46 and 46 a are exposed on the back surface of the first wafer substrate 76. Thereafter, as in FIG. 12, an insulating layer 69 is formed on the entire back surface of the first wafer substrate 76. An opening 71 is formed in the insulating layer 69 for each of the through electrodes 46 and 46a. As shown in FIG. 13, the conductive terminal 17 is formed on the surface of the insulating layer 69. Thus, a conductor that extends at least from the front surface to the back surface and connects the thermal detection element 18 and the corresponding conductive terminal 17 is formed inside the first wafer substrate 76. Individual sensor substrates 16, that is, sensor chips, are cut out from the first wafer substrate 76. The sensor substrate 16 is bonded to the second wafer substrate 72.

(5) Other Embodiments Regarding the Position of the Through Electrode As shown in FIG. 22, the through electrode 46 can be disposed at a position overlapping the projected image of the boundary surface between the column 41 and the surface of the sensor substrate 16. It is desirable that the through electrode 46 completely fits in the projected image of the boundary surface. The rigidity of the sensor substrate 16 can be increased according to the connection between the pillar 41 and the sensor substrate 16. Therefore, if the through electrode 46 is formed in such a portion, even if the rigidity of the sensor substrate 16 is lowered due to the influence of the through electrode 46, sufficient rigidity can be secured in the sensor substrate 16.

(6) Conductive Terminal According to Other Embodiment FIG. 23 schematically shows a conductive terminal 85 according to another embodiment. The conductive terminal 85 can be used for joining the sensor substrate 16 and the IC substrate 15 in place of the conductive terminal 17. The conductive terminal 85 is supported on the surface of the stacked body 52 of the IC substrate 15. For example, the conductive terminal 85 can be formed on the terminal pad 54. The conductive terminal 85 can be formed by, for example, gold plating. The conductive terminal 85 can be formed in a truncated cone shape that tapers away from the terminal pad 54. The front end surface 86 of the through electrodes 46 and 46 a is joined to the top surface 85 a of the conductive terminal 85. Here, the through electrodes 46 and 46 a protrude from the back surface of the base substrate 42. A surface layer 87 of a tin silver alloy is formed on the front end face 86 of the through electrodes 46 and 46a. The surface layer 87 is bonded to the top surface 85 a of the conductive terminal 85. An insulating film 88 can be formed on the surface of the base 44 and the insulating layer 45 of the base substrate 42 when forming the through electrodes 46, 46 a. For example, silicon dioxide can be used for the insulating film 88. In joining, the surface layer 87 and the conductive terminal 85 are pressed against each other with a predetermined load while being heated to a predetermined temperature.

  Here, a method of forming the through electrodes 46 and 46a will be briefly described. When the deep hole 68 is formed on the back surface of the first wear-substrate 62 as described above, the insulating film 88 is formed on the surfaces of the base 63 and the insulating layer 64 as shown in FIG. For example, a chemical vapor deposition method can be used to form the insulating film 88. The insulating film 88 is etched at the bottom of the deep hole 68 to expose the conductive material pad 48 and the pattern wiring 59.

  Subsequently, through electrodes 46 and 46 a are formed in the deep holes 68. Electrolytic plating is used for the formation. As shown in FIG. 25, a plating base film 89 is formed on the surface of the insulating film 88. For example, sputtering can be performed in forming the plating base film 89. Subsequently, a resist film 91 is formed on the surface of the plating base film 89. In the resist film 91, an opening 92 continuous with the deep hole 68 is formed. Copper plating is performed after the formation of the resist film 91. The space in the deep hole 68 and the opening 92 is filled with copper.

  When the through electrodes 46 and 46a are thus formed in the deep hole 68 and the opening 92, the resist film 91 is removed as shown in FIG. The plating base film 89 is removed from the surface of the base 63 by an etching process. As a result, the through electrodes 46 and 46a protruding from the back surface of the base substrate 42 are formed.

  As shown in FIG. 27, a stacked body of a nickel film 93 and a gold film 94 can be formed on the tip surfaces 86 of the through electrodes 46, 46 a instead of the surface layer 87 of tin-silver alloy. The gold film 94 is bonded to the top surface 85 a of the conductive terminal 85. In this case, ultrasonic bonding can be used for bonding the gold film 94 and the conductive terminal 85.

(7) Terahertz Camera FIG. 28 schematically shows a configuration of a terahertz camera 101 according to a specific example of an electronic device using the photodetector package 11. The terahertz camera 101 includes a housing 102. A slit 103 is formed on the front surface of the housing 102 and a lens 104 is attached. A terahertz band electromagnetic wave is emitted from the slit 103 toward the object. Such electromagnetic waves include radio waves such as terahertz waves and light such as infrared rays. Here, the terahertz band may include a frequency band of 100 GHz to 30 THz. The lens 104 receives the terahertz band electromagnetic wave reflected from the object.

  The configuration of the terahertz camera 101 will be described in more detail. As shown in FIG. 29, the terahertz camera 101 includes an irradiation source (electromagnetic wave source) 105. A drive circuit 106 is connected to the irradiation source 105. The drive circuit 106 supplies a desired drive signal to the irradiation source 105. The irradiation source 105 radiates terahertz band electromagnetic waves in response to receipt of the drive signal. As the irradiation source 105, for example, a laser light source can be used.

  The lens 104 constitutes an optical system 107. The optical system 107 may include optical components in addition to the lens 104. The photodetector package 11 is disposed on the optical axis 108 of the lens 104. The surface of the sensor substrate 13 is orthogonal to the optical axis 108, for example. The optical system 107 forms an image on the matrix of the thermal detection elements 18. An analog / digital conversion circuit 109 is connected to the photodetector package 11. The output of the thermal detection element 18 is sequentially supplied from the photodetector package 11 to the analog-digital conversion circuit 109 in time series. The analog-digital conversion circuit 109 converts the output analog signal into a digital signal.

  An arithmetic processing circuit (processing circuit) 111 is connected to the analog-digital conversion circuit 109. Digital image data is supplied from the analog-digital conversion circuit 109 to the arithmetic processing circuit 111. The arithmetic processing circuit 111 processes the image data and generates pixel data for each pixel of the display screen. A drawing processing circuit 112 is connected to the arithmetic processing circuit 111. The drawing processing circuit 112 generates drawing data based on the pixel data. A display device 113 is connected to the drawing processing circuit 112. As the display device 113, a flat panel display such as a liquid crystal display can be used. The display device 113 displays an image on the screen based on the drawing data. The drawing data can be stored in the storage device 114. The terahertz camera 101 can be used as an inspection apparatus based on permeability to paper, plastic, fibers, and other objects, and an absorption spectrum unique to the substance.

  In addition, the terahertz camera 101 can be used for qualitative analysis and quantitative analysis of substances. For such use, for example, a filter having a specific frequency can be arranged on the optical axis 108 of the lens 104. The filter blocks electromagnetic waves other than a specific wavelength. Therefore, only an electromagnetic wave having a specific wavelength can reach the photodetector package 11. Thus, the presence or amount of a specific substance can be detected.

(8) Infrared Camera FIG. 30 schematically shows a configuration of an infrared camera 121 according to a specific example of an electronic device using the photodetector package 11. The infrared camera 121 includes an optical system 122. The photodetector package 11 is disposed on the optical axis 123 of the optical system 122. The back surface of the sensor substrate 16 is orthogonal to the optical axis 123, for example. The optical system 122 forms an image on the matrix of the thermal detection elements 18. An analog-digital conversion circuit 124 is connected to the photodetector package 11. The output of the thermal detection element 18 is sequentially supplied from the photodetector package 11 to the analog-digital conversion circuit 124 in time series. The analog-digital conversion circuit 124 converts the output analog signal into a digital signal.

  An arithmetic processing circuit (control circuit) 125 is connected to the analog-digital conversion circuit 124. Digital image data is supplied from the analog-digital conversion circuit 124 to the arithmetic processing circuit 125. The arithmetic processing circuit 125 processes the image data and generates pixel data for each pixel of the display screen. A drawing processing circuit 126 is connected to the arithmetic processing circuit 125. The drawing processing circuit 126 generates drawing data based on the pixel data. A display device 127 is connected to the drawing processing circuit 126. For the display device 127, a flat panel display such as a liquid crystal display can be used. The display device 127 displays an image on the screen based on the drawing data. The drawing data can be stored in the storage device 128.

  The infrared camera 121 can be used as a thermography. In this case, the infrared camera 121 can project a heat distribution image on the screen of the display device 127. In generating the heat distribution image, the arithmetic processing circuit 125 sets the pixel color for each temperature band. Thermography can be used to measure the temperature distribution of the human body and the body temperature itself. In addition, thermography can be incorporated into FA (factory automation) equipment and used to detect heat leaks and abnormal temperature changes. For example, as shown in FIG. 31, the FA device (electronic device) 131 includes an FA function unit 132. The FA function unit 132 operates to realize a specific function. A control circuit (processing circuit) 133 is connected to the FA function unit 132. The control circuit 133 controls heating, pressurization, mechanical processing, chemical processing, and other operations of the FA function unit 132. An infrared camera 121, a display device 134, a speaker 135, and the like are connected to the control circuit 133. The infrared camera 121 images the FA function unit 132 within the imaging range. When detecting an abnormally high temperature or temperature change within the imaging range, the control circuit 133 outputs an operation stop signal toward the FA function unit 132 or outputs a warning signal toward the display device 134 or the speaker 135. be able to. In detecting an abnormally high temperature or temperature change, the control circuit 133 holds reference temperature distribution data in a memory (not shown), for example. The reference temperature distribution data specifies the temperature distribution within the normal imaging range. The control circuit 133 can collate the real-time heat distribution image with the heat distribution of the reference temperature distribution data. In addition, thermography can be used to detect an object based on a temperature difference between the object and the surroundings.

  The infrared camera 121 can be used as a night vision, that is, a night vision camera. In this case, the infrared camera 121 can display, for example, an image in the dark on the display device 127. The night vision camera can be used for, for example, a surveillance camera as a specific example of a security device, a human sensor, a driving support device, and the like. The human sensor can be used for on / off control of electrical devices (home appliances) such as escalators, lighting fixtures, air conditioners, and televisions, and other controls. For example, as illustrated in FIG. 32, the electric device 136 includes a functional unit 137. The functional unit 137 performs a mechanical operation or an electrical operation for realizing a specific function. A human sensor 138 is connected to the functional unit 137. The human sensor 138 includes an infrared camera 121. The infrared camera 121 performs imaging within the monitoring range. A determination circuit 139 is connected to the infrared camera 121. The determination circuit 139 determines the presence or absence of a person based on the heat distribution image. In the determination, the determination circuit 139 detects a movement in a specific temperature range (for example, a body temperature block) in the image. The determination circuit 139 supplies a determination signal specifying the presence or absence of a person to the functional unit 137. The functional unit 137 can be controlled to be turned on / off in response to receipt of the determination signal. For example, as illustrated in FIG. 33, the driving support device (electronic device) 141 includes an infrared camera 121 and a head-up display 142. The infrared camera 121 is attached to the front nose 144 of the vehicle 143, for example. The infrared camera 121 is arranged at a position for imaging an imaging range that spreads forward from the vehicle 143. The head-up display 142 is disposed on the driver seat side of the front window 145, for example. An image of the infrared camera 121 can be displayed on the head-up display 142. On the screen of the head-up display 142, for example, an image of a pedestrian captured in the imaging range can be emphasized. As shown in FIG. 34, a processing circuit 146 is connected to the infrared camera 121 and the head-up display 142. A vehicle speed sensor 147, a yaw rate sensor 138, and a brake sensor 149 are connected to the processing circuit 146. The vehicle speed sensor 147 detects the traveling speed of the vehicle 143. The yaw rate sensor 138 detects the yaw rate of the vehicle 143. The brake sensor 149 detects whether or not the brake pedal is operated. The processing circuit 146 selects specific pedestrians according to the running state of the vehicle 143. The processing circuit 146 identifies the traveling state of the vehicle 143 according to the traveling speed, yaw rate, and brake depression degree of the vehicle 143. The processing circuit 146 may call the driver's attention from the speaker 151 based on, for example, voice.

(9) Game Machine Controller FIG. 35 schematically shows a configuration of a game machine 152 according to a specific example of an electronic device using the photodetector package 11. The game machine 152 includes a game machine body 153, a display device 154, and a controller (electronic device) 155. The display device 154 is connected to the game machine main body 153 by wire, for example. The operation of the game machine main body 153 is displayed on the screen of the display device 154. The player G can operate the operation of the game machine main body 153 using the controller 155. In realizing such an operation, the controller 155 is irradiated with infrared rays from a pair of LED modules 156, for example. The LED module 156 can be attached to the bezel, for example, around the screen of the display device 154.

  As shown in FIG. 36, the photodetector package 11 is incorporated in the controller 155. An infrared filter 157 and an optical system (for example, a lens) 158 may be combined with the photodetector package 11. The photodetector package 11 can receive infrared rays emitted from the LED module 156. An image processing circuit 159 is connected to the photodetector package 11. The image processing circuit 159 images the infrared spot of the LED module 156 within a predetermined screen. An arithmetic processing circuit 161 is connected to the image processing circuit 159. The arithmetic processing circuit 161 generates infrared spot information. In this infrared spot information, the position and size of the infrared spot are specified in a predetermined screen. The position of the infrared spot corresponds to the position of the LED module 156. The size of the infrared spot corresponds to the distance from the LED module 156. A wireless module 162 is connected to the arithmetic processing circuit 161. The infrared spot information is sent from the wireless module 162 to the game machine body 153. Here, the operation switch 163 and the acceleration sensor 164 are connected to the arithmetic processing circuit 161. An operation signal of the operation switch 163 and acceleration information of the acceleration sensor 164 are supplied from the wireless module 162 to the game machine body 153. The game machine body 153 receives operation signals, infrared spot information, and acceleration information by the wireless module 165. The processor 166 in the game machine main body 153 specifies the operation of the operation switch 163 based on the operation signal, and specifies the movement of the controller 155 based on the infrared spot information and the acceleration information. Thus, the game machine main body 153 can be controlled in accordance with the operation of the operation switch 163 and the movement of the controller 155. The LED module 156 can be connected to the processor 166. The processor 166 can control the operation of the LED module.

  Although the present embodiment has been described in detail as described above, it will be easily understood by those skilled in the art that many modifications can be made without departing from the novel matters and effects of the present invention. Therefore, all such modifications are included in the scope of the present invention. For example, a term described with a different term having a broader meaning or the same meaning at least once in the specification or the drawings can be replaced with the different term in any part of the specification or the drawings. In addition, the configuration of the photodetector package 11, the thermal detection element 18, the terahertz camera 101, the infrared camera 121, the FA device 131, the electric device, the home appliance, the human sensor 138, the game machine 152, the game machine controller 155, etc. The operation is not limited to that described in the present embodiment, and various modifications are possible.

  DESCRIPTION OF SYMBOLS 11 Thermal type electromagnetic wave detector (photodetector package), 15 1st board | substrate (integrated circuit board), 16 2nd board | substrate (sensor board | substrate), 17 Conductive terminal, 18 Thermal type electromagnetic wave detection element (thermal type optical detection element), 27 Membrane (part of structure), 32a Conductive wiring, 32b Conductive wiring, 41 Column (Part of structure), 42 Base substrate, 43 Insulating layer, 46 Part of conductor (through electrode), 46a Conductor Part (through electrode), 47 insulating layer, 48 part of conductor and pad made of conductive material, 49 part of conductor and interlayer via, 54 terminal pad, 62 second substrate (first wafer substrate), 65 Insulating layer, 69 Insulating layer, 72 First substrate (second wafer substrate), 74 Insulating layer (laminated body), 76 Second substrate (first wafer substrate), 85 Conductive terminal, 101 Electronic device (terahertz camera) 116 processing circuit (arithmetic processing circuit), 121 electronic equipment (infrared camera), 125 processing circuit (arithmetic processing circuit), 131 electronic equipment (factory automation equipment), 133 processing circuit (control circuit), 136 electronic equipment (electrical equipment and Household appliances), 139 processing circuit (determination circuit), 141 electronic device (driving support device), 146 processing circuit, 152 electronic device (game machine), 155 electronic device (game machine controller), 161 processing circuit (arithmetic processing circuit) .

Claims (13)

A first substrate including an integrated circuit;
A first surface and a second surface on the back side of the first surface; the second surface is bonded to the first substrate; and electrically connected to the integrated circuit through a conductive terminal disposed on the second surface A second substrate,
Conductive wiring located on the first surface of the second substrate;
A conductor that at least partially penetrates the second substrate from the first surface to the second surface, and electrically connects the conductive wiring and the conductive terminal to each other;
A thermal electromagnetic wave detector, comprising: a thermal electromagnetic wave detection element positioned on the first surface of the second substrate and connected to the conductive wiring.   The thermal electromagnetic wave detector according to claim 1, wherein the conductive wiring is formed of a conductive material film.   The thermal electromagnetic wave detector according to claim 2, wherein the second substrate includes a base substrate and an insulating layer formed on a surface of the base substrate, and the conductor is formed in the insulating layer. An interlayer via having a first thermal conductance and connected to the conductive wiring; and a second thermal conductance passing through the base substrate and larger than the first thermal conductance and connected to the conductive terminal. A thermal electromagnetic wave detector.   4. The thermal electromagnetic wave detector according to claim 3, further comprising a flat conductive material pad that has a surface parallel to the first surface inside the insulating layer and connects the through electrode to the interlayer via. A thermal electromagnetic wave detector characterized by that.   5. The thermal electromagnetic wave detector according to claim 4, wherein an outline of the conductive material pad projected on the first surface is located outside an outline of the thermal electromagnetic wave detection element. Detector.   The thermal electromagnetic wave detector according to any one of claims 3 to 5, wherein the through electrode is located inside a contour of a projected image of the thermal electromagnetic wave detection element. .   6. The thermal electromagnetic wave detector according to claim 3, wherein the through electrode is disposed at a position overlapping a projected image of a boundary surface between the structure and the surface of the second substrate. A featured thermal electromagnetic wave detector.   An electronic apparatus comprising: the thermal electromagnetic wave detector according to any one of claims 1 to 7; and a control circuit that processes an output of the thermal electromagnetic wave detector. A first substrate including an integrated circuit;
A first surface and a second surface on the back side of the first surface; the second surface is bonded to the first substrate; and electrically connected to the integrated circuit through a conductive terminal disposed on the second surface A second substrate,
Conductive wiring located on the first surface of the second substrate;
A conductor that at least partially penetrates the second substrate from the first surface to the second surface, and electrically connects the conductive wiring and the conductive terminal to each other;
A thermal electromagnetic wave detecting element located on the first surface of the second substrate and connected to the conductive wiring;
An electronic apparatus comprising: a processing circuit connected to the integrated circuit and processing an output of the integrated circuit. An electromagnetic source that emits terahertz electromagnetic waves;
A first substrate including an integrated circuit;
A first surface and a second surface on the back side of the first surface; the second surface is bonded to the first substrate; and electrically connected to the integrated circuit through a conductive terminal disposed on the second surface A second substrate,
Conductive wiring located on the first surface of the second substrate;
A conductor that at least partially penetrates the second substrate from the first surface to the second surface, and electrically connects the conductive wiring and the conductive terminal to each other;
A thermal electromagnetic wave detecting element that is located on the first surface of the second substrate and connected to the conductive wiring and converts terahertz electromagnetic waves into electricity;
A terahertz camera comprising: a processing circuit connected to the integrated circuit and processing an output of the integrated circuit. A second substrate having a conductive wiring formed on a first surface to form a current path and a thermal electromagnetic wave detecting element formed on the first surface and inserted into the current path on a first substrate including an integrated circuit. Bonding a substrate on a second surface on the back side of the first surface, and electrically connecting the second substrate to the integrated circuit with a conductive terminal disposed on the second surface;
A thermal electromagnetic wave detector characterized in that a conductor that extends from at least the first surface to the second surface and connects the conductive wiring and the conductive terminal to each other is formed inside the second substrate. Manufacturing method. In the manufacturing method of the thermal type electromagnetic wave detector according to claim 11, in formation of the conductor,
Forming an interlayer via while laminating an insulating layer on the surface of the material substrate;
Forming the conductive wiring connected to the interlayer via on the surface of the insulating layer;
Forming a through electrode connected to the interlayer via from the back surface of the material substrate. A method of manufacturing a thermal electromagnetic wave detector, comprising: In the manufacturing method of the thermal type electromagnetic wave detector according to claim 11, in formation of the conductor,
Forming a through electrode from the surface of the material substrate;
Forming an interlayer via connected to the through electrode while laminating an insulating layer on the surface of the material substrate;
Forming a conductive wiring connected to the interlayer via on the surface of the insulating layer. A method of manufacturing a thermal electromagnetic wave detector, comprising: