JP2013152115A - Thermal electromagnetic wave detector and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermal photodetector having a structure for downsizing.SOLUTION: The surface of a first substrate 12 is opposite to a first face of a second substrate 13. At least a portion of the second substrate 13 is formed from a material which allows an electromagnetic wave having a specific wavelength to pass therethrough. The first face of the second substrate 13 is provided with a thermal photodetector 18. The thermal electromagnetic wave detector 18 is sealed with a sealing body 19 between the first substrate 12 and the second substrate 13. The first substrate 12 itself and the second substrate 13 itself can function as a sealing package.

Description

  The present invention relates to a thermal electromagnetic wave detector, an electronic device using the same, and the like.

  An optical sensor using a thermal electromagnetic wave detector is generally known. For example, as described in Patent Document 1, the sensor substrate is bonded to an integrated circuit (IC) substrate. The surface of the sensor substrate faces the surface of the IC substrate. A conductive material pad is formed on the surface of the sensor substrate. Bumps are bonded to the conductive material pads.

JP 2006-47085 A US Pat. No. 5,565,046

  The thermal electromagnetic wave detection element on the sensor substrate is sealed in an atmosphere of nitrogen or an inert gas. In sealing, the sensor substrate and the IC substrate are accommodated in a sealed package. As a result, the thermal electromagnetic wave detector becomes large.

  According to at least one aspect of the present invention, a thermal electromagnetic wave detector having a structure that contributes to downsizing can be provided.

  (1) One embodiment of the present invention includes a first substrate including an integrated circuit, a first surface facing the surface of the first substrate, and a connection terminal disposed on the first surface. A second substrate that is electrically connected to the first substrate and is at least partially formed of a material that transmits electromagnetic waves having a specific wavelength, and is electrically connected to the connection terminal, located on the first surface of the second substrate. A thermal electromagnetic wave detection element to be connected; and a sealing body that surrounds at least the thermal electromagnetic wave detection element between the first substrate and the second substrate, the first substrate, the second substrate, and the sealing. The present invention relates to a thermal electromagnetic wave detector that seals at least the thermal electromagnetic wave detection element with a body.

  In the thermal electromagnetic wave detector, the thermal electromagnetic wave detection element is sealed between the first substrate and the second substrate. The first substrate and the second substrate itself can function as a sealed package. Therefore, the sealed package that accommodates the first substrate and the second substrate can be omitted. Such a thermal electromagnetic wave detector can be made smaller than before.

  (2) The sealing body is sandwiched between the first substrate and the second substrate, and accommodates at least the thermal electromagnetic wave detection element between the first substrate and the second substrate. A space can be formed.

  In the thermal electromagnetic wave detector, a vacuum space is formed between the first substrate and the second substrate. The volume of the vacuum space can be reduced as much as possible. As a result, the rigidity and strength of the first substrate, the second substrate, and the sealing body need not be increased so much. Such a structure contributes to a reduction in size and weight of the thermal electromagnetic wave detector. When the first substrate and the second substrate are accommodated in the sealed package, a large volume is required for the sealed package. Therefore, in securing the rigidity and strength of the sealed package, the size and weight of the sealed package are It will increase.

  (3) The second substrate includes a base, a membrane that supports the thermal electromagnetic wave detection element on a space layer formed on the surface of the base, and a support arm that connects the membrane to the base. Can do.

  The thermal electromagnetic wave detecting element can be thermally separated from the substrate by the action of the membrane. The flow path of thermal energy can be limited to the support arm. As a result, the thermal time constant of the thermal electromagnetic wave detection element can be set relatively easily according to the design of the support arm.

  (4) In the thermal electromagnetic wave detector, an electromagnetic wave absorbing material can be sandwiched between the membrane and the thermal electromagnetic wave detecting element. In the thermal electromagnetic wave detector, an electromagnetic wave having a specific wavelength passes through the second substrate and is irradiated onto the membrane. Electromagnetic waves are absorbed by the membrane. At the same time, the electromagnetic wave is absorbed by the electromagnetic wave absorber. Thus, a sufficient amount of electromagnetic waves is absorbed as compared to the membrane alone. A sufficient amount of thermal energy can contribute to the temperature change of the thermal electromagnetic wave detection element.

  (5) In the thermal electromagnetic wave detector, an antireflection film may be formed on the second surface of the second substrate on the back side of the first surface. The antireflection film prevents reflection of electromagnetic waves on the second surface of the second substrate. Therefore, a sufficient amount of electromagnetic waves can pass through the second substrate. A sufficient amount of thermal energy can act on the thermal electromagnetic wave detection element.

  (6) The membrane may be composed of a laminated film of different materials. The absorption rate of electromagnetic waves differs depending on the wavelength of electromagnetic waves. Depending on the material, the wavelength of the high absorption rate is different. When an electromagnetic wave absorbing material film is formed with a laminated film of different materials, not only a high absorption rate is achieved at a specific wavelength for each material, but also the absorption rate is increased over a wide range of wavelengths due to a synergistic effect based on the lamination. be able to. As a result, electromagnetic waves can be converted into thermal energy over a wide range of wavelengths. The sensitivity of the thermal electromagnetic wave detection element to electromagnetic waves can be increased.

  (7) The laminated film may have a silicon oxide layer and a silicon nitride layer. When the silicon oxide layer and the silicon nitride layer are overlaid in this manner, electromagnetic waves can be converted into thermal energy over a wider range of wavelengths than when a silicon oxide film or a silicon nitride film is used alone. In addition, the film rigidity of the laminated film can be increased by the action of the silicon nitride layer.

  (8) In the thermal electromagnetic wave detector, the sealing body can be made of metal, and the sealing body can be dropped to a ground potential. Thus, the sealing body can function as an electromagnetic shield.

  (9) The thermal electromagnetic wave detector can be used by being incorporated in an electronic device. The electronic device may include a thermal electromagnetic wave detector and a processing circuit that processes an output of the thermal electromagnetic wave detector.

  (10) According to another aspect of the present invention, the integrated circuit includes a first substrate including an integrated circuit, a first surface facing the surface of the first substrate, and a connection terminal disposed on the first surface. A second substrate electrically connected to the circuit and at least partially formed of a material that transmits electromagnetic waves of a specific wavelength; and located on the first surface of the second substrate and electrically connected to the connection terminal A thermal electromagnetic wave detection element connected to the semiconductor device, a sealing body surrounding at least the thermal electromagnetic wave detection element between the first substrate and the second substrate, and an output of the integrated circuit connected to the integrated circuit And an electronic device that seals at least the thermal electromagnetic wave detection element with the first substrate, the second substrate, and the sealing body.

  (11) Still another aspect of the present invention includes an electromagnetic wave source that emits terahertz band electromagnetic waves, a first substrate that includes an integrated circuit, and a first surface that faces the surface of the first substrate, A second substrate that is electrically connected to the integrated circuit through a connection terminal disposed on the first surface and is at least partially formed of a material that transmits electromagnetic waves of a specific wavelength; and the first substrate of the second substrate. A thermal electromagnetic wave detection element that is located on a surface and is electrically connected to the connection terminal and converts a terahertz band electromagnetic wave into electricity, and at least the thermal electromagnetic wave detection between the first substrate and the second substrate. A sealing body that surrounds an element; and a processing circuit that is connected to the integrated circuit and processes an output of the integrated circuit, and includes at least the thermal electromagnetic wave in the first substrate, the second substrate, and the sealing body. Terahe sealing the detector element On Tsukamera. In such a terahertz camera, high-definition images can be realized in accordance with the increase in the density of thermal electromagnetic wave detection elements.

1 is a cross-sectional view schematically showing a specific example of a thermal electromagnetic wave detector according to an embodiment of the present invention, that is, a photodetector package. It is an enlarged partial plan view of a sensor substrate. FIG. 3 is an enlarged vertical sectional view of an integrated circuit (IC) substrate and a sensor substrate along the line 3-3 in FIG. 2. It is a graph which shows the relationship between the wavelength of light, and an absorptance regarding silicon oxide and silicon nitride. It is a vertical sectional view of the first wafer substrate. It is a vertical sectional view of the first wafer substrate schematically showing a through space formed in the insulator film. It is a vertical sectional view which shows notionally the 1st wafer substrate joined to the 2nd wafer substrate. FIG. 4 is an enlarged vertical sectional view schematically showing a thermal detection element according to another embodiment corresponding to FIG. 3. It is a perspective view which shows roughly the external appearance of the terahertz camera which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows the structure of a terahertz camera schematically. It is a block diagram which shows roughly the structure of the infrared camera which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of FA (factory automation) apparatus which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of the electric equipment (home appliance) in which the human sensitive sensor which concerns on one specific example of the electronic device using a photodetector package was incorporated. 1 is an external view of a vehicle schematically showing a configuration of a vehicle in which a driving support device according to a specific example of an electronic device using a photodetector package is incorporated. It is a block diagram which shows the structure of a driving assistance device roughly. It is a perspective view which shows roughly the external appearance of the game machine which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of the game machine controller which concerns on one specific example of the electronic device using a photodetector package.

  Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. The present embodiment described below does not unduly limit the contents of the present invention described in the claims, and all the configurations described in the present embodiment are essential as means for solving the present invention. Not necessarily.

(1) Overall Configuration of Photodetector Package FIG. 1 schematically shows a specific example of a thermal electromagnetic wave detector, that is, a photodetector package 11 according to an embodiment of the present invention. The photodetector package 11 includes an integrated circuit (IC) substrate (first substrate) 12 and a sensor substrate (second substrate) 13. The IC substrate 12 includes an integrated circuit. The integrated circuit constitutes a readout circuit. For example, solder bumps 14 are attached to the back surface of the IC substrate 12. The IC substrate 12 is bonded to the printed wiring board 15 with solder bumps 14. Thus, the photodetector package 11 can be mounted on the printed wiring board 15. The IC substrate 12 constitutes an IC chip. The sensor substrate 13 constitutes a sensor chip. Instead of the solder bumps 14, other connection terminals may be used.

  The sensor substrate 13 is received on the surface of the IC substrate 12. The surface (first surface) of the sensor substrate 13 faces the surface of the IC substrate 12. That is, the sensor substrate 13 is turned over. The surface of the sensor substrate 13 is bonded to the surface of the IC substrate 12. In bonding, a conductive material bonded body 17 is sandwiched between the sensor substrate 13 and the IC substrate 12. The bonded body 17 electrically connects the sensor substrate 13 to a readout circuit in the IC substrate 12. Here, the bonded body 17 is formed of bumps. For example, gold bumps can be used as the bumps. The gold bump can be bonded to the IC substrate 12 by metal bonding or a solder material. In addition, solder bumps may be used instead of gold bumps. On the surface of the sensor substrate 13, one or more thermal electromagnetic wave detection elements, that is, thermal detection elements 18 are formed.

  A sealing body 19 is sandwiched between the sensor substrate 13 and the IC substrate 12. The sealing body 19 forms a frame that extends without interruption along the contours of the sensor substrate 13 and the IC substrate 12. The frame surrounds at least the joined body 17 and the thermal detection element 18 without interruption. The frame body is airtightly bonded to the surface of the sensor substrate 13 and is airtightly bonded to the surface of the IC substrate 12. Thus, the frame body forms a sealed space 21 between the sensor substrate 13 and the IC substrate 12. At least the joined body 17 and the thermal detection element 18 are accommodated in the sealed space 21. In this way, at least the joined body 17 and the thermal photodetection element 18 are sealed between the sensor substrate 13 and the IC substrate 12. Here, a vacuum state is established in the sealed space 21. A vacuum space is formed. The sealing body 19 may divide the sealed space 21 into a plurality of chambers.

  An antireflection film (AR film) 22 is laminated on the back surface (second surface) of the sensor substrate 13. For example, diamond-like carbon (DLC) can be used for the antireflection film 22. The antireflection film 22 prevents reflection of light on the back surface of the sensor substrate 13.

  FIG. 2 is an enlarged partial plan view of the sensor substrate 13. A plurality of rows and columns of thermal photodetecting elements 18 are arranged on the surface of the sensor substrate 13. That is, a matrix of the thermal detection elements 18 is formed. The individual thermal detection elements 18 can be compared with pyroelectric detection elements.

  Individual thermal detection elements 18 are individually supported by the membrane 25. The membrane 25 is disposed on a spatial layer 26 formed on the surface of the base of the sensor substrate 13 as will be described later. The membrane 25 is formed in a flat plate shape having a quadrilateral outline, for example. Here, the membrane 25 has, for example, a square outline. The membrane 25 is connected to the base body by a support arm 27.

  A first connection terminal (connection terminal) 28 and a second connection terminal 29 are arranged on the surface of the sensor substrate 13 outside the outline of the space layer 26. The first connection terminal 28 is assigned to each thermal detection element 18. The first connection terminal 28 is formed in a pad shape. The first connection terminal 28 can be formed of a conductive material such as copper.

  Each first connection terminal 28 is electrically connected to the corresponding thermal detection element 18 individually. In connection, the first wirings 31 are individually drawn out from the individual thermal detection elements 18. The first wiring 31 is formed from a conductive material. The first wiring 31 can be composed of a single linear pattern wiring. The first wiring 31 extends over the surface of the thermal detection element 18 and the surface of the sensor substrate 13. The individual first wirings 31 are individually connected to the corresponding first connection terminals 28 at the tips.

  Only one second connection terminal 29 is commonly assigned to one row of thermal detection elements 18 in the matrix. The second connection terminal 29 is formed in a pad shape. The second connection terminal 29 can be formed of a conductive material such as copper. Corresponding thermal detection elements 18 are commonly connected to the second connection terminal 29. For connection, the second wiring 32 is drawn from each thermal detection element 18. The second wiring 32 is formed from a conductive material. The second wiring 32 can be formed of a crank-shaped pattern wiring that is bent at a right angle outside the outline of the thermal detection element 18. The second wiring 32 extends over the surface of the thermal detection element 18 and the surface of the sensor substrate 13.

  The second wiring 32 is connected to one common wiring 33 for each group of thermal detection elements 18 in one row. The common wiring 33 is formed from a conductive material. The common wiring 33 can be configured by a pattern wiring extending over the surface of the sensor substrate 13. The tips of the individual common wires 33 are individually connected to the corresponding second connection terminals 29.

  As shown in FIG. 3, the sensor substrate 13 includes a base body 34 and an insulator film 35. The base 34 is formed of a material that transmits electromagnetic waves having a specific wavelength. Here, the substrate 34 can be made of, for example, silicon. Silicon allows, for example, infrared transmission.

  The insulator film 35 spreads on the surface of the substrate 34. The insulator film 35 is made of, for example, silicon oxide. A through space 36 is formed in the insulator film 35. The through space 36 penetrates from the front surface to the back surface of the insulator film 35. The membrane 25 and the support arm 27 are disposed in contact with the through space 36 on the surface of the insulator film 35. The support arm 27 is connected to the surface of the insulator film 35. Thus, the support arm 27 connects the membrane 25 to the base body 34 via the insulator film 35. The through space 36 forms the space layer 26.

The membrane 25 is formed from a material that absorbs a desired electromagnetic wave. For example, an insulator is used as the material. The electromagnetic wave energy is converted into thermal energy in response to the absorption of the electromagnetic wave. Here, the membrane 25 is composed of a laminated film of different materials. The laminated film can have a three-layer structure. The three-layer structure includes a first silicon oxide (SiO ₂ ) layer 25a in contact with the space layer 26, a silicon nitride (Si ₃ N ₄ ) layer 25b stacked on the surface of the first silicon oxide layer 25a, and a silicon nitride layer 25b. And a second silicon oxide (SiO ₂ ) layer 25c stacked on the surface of the semiconductor layer. Here, the thickness of the first silicon oxide layer 25a is set to, for example, about 1000 nm, the thickness of the silicon nitride layer 25b is set to, for example, about 300 nm, and the thickness of the second silicon oxide layer 25c is set to, for example, about 600 nm. Can be done.

  The thermal detection element 18 includes a pyroelectric capacitor 37. The pyroelectric capacitor 37 includes a pyroelectric body 38. The pyroelectric body 38 is formed of a dielectric that exhibits a pyroelectric effect. For example, PZT (lead zirconate titanate) can be used as the dielectric. The pyroelectric body 38 generates a change in the amount of electric polarization in accordance with a temperature change. Here, the pyroelectric body 38 is formed in a thin film.

  The pyroelectric capacitor 37 includes a lower electrode 39 and an upper electrode 41. The pyroelectric body 38 is sandwiched between the lower electrode 39 and the upper electrode 41. The lower electrode 39 is formed on the surface of the membrane 25. For example, the lower electrode 39 may have a three-layer structure of iridium (Ir), iridium oxide (IrOx), and platinum (Pt) sequentially from the surface of the membrane 25. The upper electrode 41 is formed on the surface of the pyroelectric body 38. The upper electrode 41 may have a three-layer structure of platinum (Pt), iridium oxide (IrOx), and iridium (Ir) in order from the pyroelectric body 38. A voltage change occurs between the upper electrode 41 and the lower electrode 39 in accordance with the pyroelectric effect of the pyroelectric body 38.

  The pyroelectric capacitor 37 is covered with an insulating film 42. For example, silicon oxide can be used for the insulating film 42. The first wiring 31 is formed on the surface of the insulating film 42. The first wiring 31 is connected to the upper electrode 41. For this connection, a contact hole 43 is formed in the insulating film 42. Similarly, the second wiring 32 is formed on the surface of the insulating film 42. The second wiring 32 is connected to the lower electrode 39. For this connection, a contact hole 44 is formed in the insulating film 42.

  The IC substrate 12 is formed of a base body 45 and a laminated body 46 of insulating layers. The base body 45 has a predetermined rigidity, for example. For example, a silicon substrate can be used as the base body 45. The laminated body 46 of insulating layers is laminated on the surface of the base body 45. The insulating layer can be composed of a thin film of an insulating material. For example, silicon oxide can be used as the insulating material.

  A readout circuit is constructed on the substrate 45. For example, impurities are diffused from the surface of the base body 45 into the base body 45 when the readout circuit is constructed. A circuit component 47 can be established on the surface of the substrate 45 in accordance with such impurity diffusion, oxide film, electrodes, and other formations. Examples of such circuit components 47 include MOSFETs (metal oxide semiconductor field effect transistors).

  Terminal pads 48 are formed on the surface of the laminated body 46 for each bonded body 17. The terminal pad 48 is made of a conductive material. Here, a metal material such as copper can be used as the conductive material. Each joined body 17 is individually connected to a corresponding terminal pad 48. Pattern wirings 49 and vias 51 are formed inside the stacked body 46. The pattern wiring 49 and the via 51 are formed from a conductive material. The pattern wiring 49 and the via 51 connect the terminal pad 48 to the circuit component 47. Thus, a signal path is established between the circuit component 47 and the terminal pad 48.

  A through electrode 52 is formed in the base body 45. The through electrode 52 penetrates the base body 45. The upper end of the through electrode 52 is connected to the pattern wiring 49 inside the multilayer body 35. The through electrode 52 is connected to the readout circuit through the pattern wiring 49 and the via 51. The through electrode 52 is made of a conductive material. Here, a metal material such as copper can be used as the conductive material. The lower end of the through electrode 52 is exposed on the back surface of the base body 45. The solder bump 14 is joined to the lower end of the through electrode 52.

  The sealing body 19 can be formed from an oxide, for example. The sealing body 19 can be formed by being stacked on the surface of the laminated body 46 on the IC substrate 12. Therefore, the sealing body 19 can be firmly and airtightly bonded to the surface of the IC substrate 12. On the other hand, the sealing body 19 is bonded to the insulator film 35 on the surface of the sensor substrate 13. The oxide films can be firmly bonded to each other. Therefore, the sealing body 19 can be firmly and airtightly bonded to the surface of the sensor substrate 13. In addition, a metal material can be used for the sealing body 19 instead of the oxide. In this case, the sealing body 19 can be dropped to the ground potential.

(2) Operation of Photodetector Package Next, the operation of the photodetector package 11 will be briefly described. When electromagnetic waves reach the photodetector package 11, electromagnetic waves (for example, infrared rays) having a specific wavelength are transmitted through the base 34 of the sensor substrate 13. The light passes through the through space 36 and reaches the membrane 25. Light is absorbed by the membrane 25 and heat is generated in the membrane 25. The thermal energy of light is transmitted to the thermal photodetecting element 18 with a predetermined thermal time constant. Since the pyroelectric body 38 is in direct contact with the metal lower electrode 39 and the lower electrode 39 is in direct contact with the membrane 25, the thermal energy of the membrane 25 can be transmitted to the pyroelectric body 38 without time delay. it can. The temperature of the pyroelectric body 38 changes according to the thermal energy. A change in the amount of electric polarization is produced in response to a change in temperature. For example, when detection is performed by a sole follower circuit, a pyroelectric current flows from each thermal detection element 18 through the first connection terminal 28 and the second connection terminal 29 and is converted into a voltage, and the voltage change is transmitted to the FET gate. The The voltage changes according to the change in the amount of electric polarization. As a result, temperature information can be obtained for each thermal detection element 18.

  In the photodetector package 11, the thermal photodetector 18 is sealed between the IC substrate 12 and the sensor substrate 13. The IC substrate 12 and the sensor substrate 13 themselves can function as a sealed package. Therefore, the sealed package that accommodates the IC substrate 12 and the sensor substrate 13 can be omitted. Such a photodetector package 11 can be made smaller than before.

  In sealing, a vacuum state can be established in the sealed space 21. Compared to the case where the IC substrate 12 and the sensor substrate 13 are housed in separate sealed packages, the volume of the vacuum space can be reduced as much as possible. Since the pressure acts only in a small volume, the rigidity and strength of the IC substrate 12, the sensor substrate 13, and the sealing body 19 do not have to be increased so much. Such a structure contributes to reducing the size and weight of the photodetector package 11. When the IC substrate 12 and the sensor substrate 13 are accommodated in a sealed package, a large volume is required for the sealed package. Therefore, in securing the rigidity and strength of the sealed package, the size and weight of the sealed package are It will increase.

  Further, the thermal detection element 18 can be thermally separated from the base body 34 and the insulator film 35 by the action of the membrane 25. The heat energy distribution path can be limited to the support arm 27. As a result, the thermal time constant of the thermal detection element 18 can be set relatively easily according to the design of the support arm 27.

  In addition, the antireflection film 22 prevents light reflection on the back surface of the sensor substrate 13. A sufficient amount of light can pass through the sensor substrate 13. A sufficient amount of thermal energy can act on the thermal detection element 18.

  Furthermore, the absorption rate of electromagnetic waves differs depending on the wavelength of the electromagnetic waves. Depending on the material, the wavelength of the high absorption rate is different. When the membrane 25 is formed of a laminated film of different materials, not only a high absorption rate can be achieved at a specific wavelength for each material, but also the absorption rate can be increased over a wide range of wavelengths due to a synergistic effect based on the lamination. it can. As a result, electromagnetic waves can be converted into thermal energy over a wide range of wavelengths. The sensitivity of the thermal detection element 18 with respect to electromagnetic waves can be increased. For example, as shown in FIG. 4, silicon oxide exhibits absorption peaks around wavelengths λ = 9.0 to 9.5 μm and 12.0 to 13.0 μm. Silicon nitride shows an absorption peak around a wavelength λ = 11.0 μm. In the laminated body of the silicon oxide layer and the silicon nitride layer, a high absorption rate can be established at a wavelength of 9.0 μm or more. Compared to the case where a silicon oxide film or a silicon nitride film is used alone, the membrane 25 can convert electromagnetic waves into thermal energy over a wide range of wavelengths. In addition, the membrane rigidity of the membrane 25 can be increased by the action of the silicon nitride layer 25b.

  Furthermore, if the sealing body 19 is formed from a metal material and the sealing body 19 is dropped to the ground potential, the sealing body 19 can function as an electromagnetic shield. Therefore, the inside of the sealed space 21 can be protected from external electromagnetic waves.

(3) Method for Manufacturing Photodetector Package Next, a method for manufacturing the photodetector package 11 will be briefly described. First, as shown in FIG. 5, a first wafer substrate 61 is prepared. The first wafer substrate 61 includes a disk-shaped base 62. An insulator film 63 is laminated on the surface of the base 62. A membrane material film 64 is further laminated on the surface of the insulator film 63. For example, a silicon wafer can be used as the base 62. The membrane material film 64 is composed of a laminated film of different materials. The laminated film has a three-layer structure. The three-layer structure includes a first silicon oxide (SiO ₂ ) layer 65 stacked on the surface of the insulator film 63, and a silicon nitride (Si ₃ N ₄ ) layer 66 stacked on the surface of the first silicon oxide layer 65. And a second silicon oxide (SiO ₂ ) layer 67 stacked on the surface of the silicon nitride layer 66. On the surface of the membrane material film 64, the thermal detection element 18, the first connection terminal 28, the second connection terminal 29, the first wiring 31, the second wiring 32, and the common wiring 33 are formed. For the formation, vacuum deposition, sputtering, plating, and other film forming methods can be appropriately used. The membrane 25 and the support arm 27 are cut out from the membrane material film 64 according to a predetermined pattern. For example, an etching method can be used for cutting.

  Thereafter, as shown in FIG. 6, a through space 36 is formed in the insulator film 63 of the first wafer substrate 61. The material of the insulator film 63 is removed under the membrane 25. The membrane 25 is opposed to the surface of the substrate 62. A space layer 26 is formed between the membrane 25 and the substrate 62.

  Thereafter, as shown in FIG. 7, a second wafer substrate 71 is prepared. On the second wafer substrate 71, a readout circuit (integrated circuit) is formed for each specific region. Further, the bonded body 17 and the sealing body 19 are formed on the stacked body 46 of the second wafer substrate 71. The sealing body 19 can be formed by stacking oxides such as silicon oxide. The sealing body 19 may enclose the terminal pad 48 group for each photodetector package 11.

  The first wafer substrate 61 is bonded to the second wafer substrate 71. In bonding, the surface of the first wafer substrate 61 is opposed to the surface of the second wafer substrate 71. The first wafer substrate 61 is electrically connected to the readout circuit by the joined body 17 disposed on the surface of the first wafer substrate 61. At the same time, the top surface of the sealing body 19 is bonded to the surface of the first wafer substrate 61. Thus, a sealed space is established for each sealing body 19 between the first wafer substrate 61 and the second wafer substrate 71.

  Thereafter, the individual photodetector packages 11 can be cut out from the first wafer substrate 61 and the second wafer substrate 71 bonded to each other. In cutting out, the sealed space is maintained for each sealing body 19. Thus, the photodetector package 11 is manufactured. In addition, instead of joining the first wafer substrate 61 and the second wafer substrate 71, the sensor substrate 13 may be individually joined to the second wafer substrate 71. In this case, each sensor substrate 13 is cut out from the first wafer substrate 61 prior to bonding. Thereafter, the individual photodetector packages 11 are cut out from the second wafer substrate 71. Instead, the sensor substrate 13 may be individually joined to the IC substrate 12. In this case, each sensor substrate 13 is cut out from the first wafer substrate 61 and the IC substrate 12 is cut out from the second wafer substrate 71 prior to bonding.

(4) Other Embodiments As shown in FIG. 8, in each thermal detection element 18, a light absorbing material 72 may be sandwiched between the pyroelectric capacitor 37 and the membrane 25. Light is absorbed by the light absorbing material 72 at the same time as being absorbed by the membrane 25. In addition to the membrane 25, the light is converted into heat energy by the light absorbing material 72. With the addition of the light absorbing material 72, the film thickness of the membrane 25 and the support arm 27 can be reduced. The distribution path of heat energy can be further narrowed by the support arm 27.

(5) Terahertz Camera FIG. 9 schematically shows a configuration of a terahertz camera 101 according to a specific example of an electronic apparatus using the photodetector package 11. The terahertz camera 101 includes a housing 102. A slit 103 is formed on the front surface of the housing 102 and a lens 104 is attached. A terahertz band electromagnetic wave is emitted from the slit 103 toward the object. Such electromagnetic waves include radio waves such as terahertz waves and light such as infrared rays. Here, the terahertz band may include a frequency band of 100 GHz to 30 THz. The lens 104 receives the terahertz band electromagnetic wave reflected from the object.

  The configuration of the terahertz camera 101 will be described in more detail. As illustrated in FIG. 10, the terahertz camera 101 includes an irradiation source (electromagnetic wave source) 105. A drive circuit 106 is connected to the irradiation source 105. The drive circuit 106 supplies a desired drive signal to the irradiation source 105. The irradiation source 105 radiates terahertz band electromagnetic waves in response to receipt of the drive signal. As the irradiation source 105, for example, a laser light source can be used.

  The lens 104 constitutes an optical system 107. The optical system 107 may include optical components in addition to the lens 104. The photodetector package 11 is disposed on the optical axis 108 of the lens 104. The surface of the sensor substrate 13 is orthogonal to the optical axis 108, for example. The optical system 107 forms an image on the matrix of the thermal detection elements 18. An analog / digital conversion circuit 109 is connected to the photodetector package 11. The output of the thermal detection element 18 is sequentially supplied from the photodetector package 11 to the analog-digital conversion circuit 109 in time series. The analog-digital conversion circuit 109 converts the output analog signal into a digital signal.

  An arithmetic processing circuit (processing circuit) 111 is connected to the analog-digital conversion circuit 109. Digital image data is supplied from the analog-digital conversion circuit 109 to the arithmetic processing circuit 111. The arithmetic processing circuit 111 processes the image data and generates pixel data for each pixel of the display screen. A drawing processing circuit 112 is connected to the arithmetic processing circuit 111. The drawing processing circuit 112 generates drawing data based on the pixel data. A display device 113 is connected to the drawing processing circuit 112. As the display device 113, a flat panel display such as a liquid crystal display can be used. The display device 113 displays an image on the screen based on the drawing data. The drawing data can be stored in the storage device 114. The terahertz camera 101 can be used as an inspection apparatus based on permeability to paper, plastic, fibers, and other objects, and an absorption spectrum unique to the substance.

  In addition, the terahertz camera 101 can be used for qualitative analysis and quantitative analysis of substances. For such use, for example, a filter having a specific frequency can be arranged on the optical axis 108 of the lens 104. The filter blocks electromagnetic waves other than a specific wavelength. Therefore, only an electromagnetic wave having a specific wavelength can reach the photodetector package 11. Thus, the presence or amount of a specific substance can be detected.

(6) Electronic Device FIG. 11 schematically shows a configuration of an infrared camera 121 according to a specific example of an electronic device using the photodetector package 11. The infrared camera 121 includes an optical system 122. The photodetector package 11 is disposed on the optical axis 123 of the optical system 122. The back surface of the sensor substrate 16 is orthogonal to the optical axis 123, for example. The optical system 122 forms an image on the matrix of the thermal detection elements 18. An analog-digital conversion circuit 124 is connected to the photodetector package 11. The output of the thermal detection element 18 is sequentially supplied from the photodetector package 11 to the analog-digital conversion circuit 124 in time series. The analog-digital conversion circuit 124 converts the output analog signal into a digital signal.

  An arithmetic processing circuit (control circuit) 125 is connected to the analog-digital conversion circuit 124. Digital image data is supplied from the analog-digital conversion circuit 124 to the arithmetic processing circuit 125. The arithmetic processing circuit 125 processes the image data and generates pixel data for each pixel of the display screen. A drawing processing circuit 126 is connected to the arithmetic processing circuit 125. The drawing processing circuit 126 generates drawing data based on the pixel data. A display device 127 is connected to the drawing processing circuit 126. For the display device 127, a flat panel display such as a liquid crystal display can be used. The display device 127 displays an image on the screen based on the drawing data. The drawing data can be stored in the storage device 128.

  The infrared camera 121 can be used as a thermography. In this case, the infrared camera 121 can project a heat distribution image on the screen of the display device 127. In generating the heat distribution image, the arithmetic processing circuit 125 sets the pixel color for each temperature band. Thermography can be used to measure the temperature distribution of the human body and the body temperature itself. In addition, thermography can be incorporated into FA (factory automation) equipment and used to detect heat leaks and abnormal temperature changes. For example, as shown in FIG. 12, the FA device (electronic device) 131 includes an FA function unit 132. The FA function unit 132 operates to realize a specific function. A control circuit (processing circuit) 133 is connected to the FA function unit 132. The control circuit 133 controls heating, pressurization, mechanical processing, chemical processing, and other operations of the FA function unit 132. An infrared camera 121, a display device 134, a speaker 135, and the like are connected to the control circuit 133. The infrared camera 121 images the FA function unit 132 within the imaging range. When detecting an abnormally high temperature or temperature change within the imaging range, the control circuit 133 outputs an operation stop signal toward the FA function unit 132 or outputs a warning signal toward the display device 134 or the speaker 135. be able to. In detecting an abnormally high temperature or temperature change, the control circuit 133 holds reference temperature distribution data in a memory (not shown), for example. The reference temperature distribution data specifies the temperature distribution within the normal imaging range. The control circuit 133 can collate the real-time heat distribution image with the heat distribution of the reference temperature distribution data. In addition, thermography can be used to detect an object based on a temperature difference between the object and the surroundings.

  The infrared camera 121 can be used as a night vision, that is, a night vision camera. In this case, the infrared camera 121 can display, for example, an image in the dark on the display device 127. The night vision camera can be used for, for example, a surveillance camera as a specific example of a security device, a human sensor, a driving support device, and the like. The human sensor can be used for on / off control of electrical devices (home appliances) such as escalators, lighting fixtures, air conditioners, and televisions, and other controls. For example, as illustrated in FIG. 13, the electric device 136 includes a functional unit 137. The functional unit 137 performs a mechanical operation or an electrical operation for realizing a specific function. A human sensor 138 is connected to the functional unit 137. The human sensor 138 includes an infrared camera 121. The infrared camera 121 performs imaging within the monitoring range. A determination circuit 139 is connected to the infrared camera 121. The determination circuit 139 determines the presence or absence of a person based on the heat distribution image. In the determination, the determination circuit 139 detects a movement in a specific temperature range (for example, a body temperature block) in the image. The determination circuit 139 supplies a determination signal specifying the presence or absence of a person to the functional unit 137. The functional unit 137 can be controlled to be turned on / off in response to receipt of the determination signal. For example, as illustrated in FIG. 14, the driving support device (electronic device) 141 includes an infrared camera 121 and a head-up display 142. The infrared camera 121 is attached to the front nose 144 of the vehicle 143, for example. The infrared camera 121 is arranged at a position for imaging an imaging range that spreads forward from the vehicle 143. The head-up display 142 is disposed on the driver seat side of the front window 145, for example. An image of the infrared camera 121 can be displayed on the head-up display 142. On the screen of the head-up display 142, for example, an image of a pedestrian captured in the imaging range can be emphasized. As shown in FIG. 15, a processing circuit 146 is connected to the infrared camera 121 and the head-up display 142. A vehicle speed sensor 147, a yaw rate sensor 148, and a brake sensor 149 are connected to the processing circuit 146. The vehicle speed sensor 147 detects the traveling speed of the vehicle 143. The yaw rate sensor 148 detects the yaw rate of the vehicle 143. The brake sensor 149 detects whether or not the brake pedal is operated. The processing circuit 146 selects specific pedestrians according to the running state of the vehicle 143. The processing circuit 146 identifies the traveling state of the vehicle 143 according to the traveling speed, yaw rate, and brake depression degree of the vehicle 143. The processing circuit 146 may call the driver's attention from the speaker 151 based on, for example, voice.

(7) Game Machine Controller FIG. 16 schematically shows a configuration of a game machine 152 according to a specific example of an electronic device using the photodetector package 11. The game machine 152 includes a game machine body 153, a display device 154, and a controller (electronic device) 155. The display device 154 is connected to the game machine main body 153 by wire, for example. The operation of the game machine main body 153 is displayed on the screen of the display device 154. The player G can operate the operation of the game machine main body 153 using the controller 155. In realizing such an operation, the controller 155 is irradiated with infrared rays from a pair of LED modules 156, for example. The LED module 156 can be attached to the bezel, for example, around the screen of the display device 154.

  As shown in FIG. 17, the photodetector package 11 is incorporated in the controller 155. An infrared filter 157 and an optical system (for example, a lens) 158 may be combined with the photodetector package 11. The photodetector package 11 can receive infrared rays emitted from the LED module 156. An image processing circuit 159 is connected to the photodetector package 11. The image processing circuit 159 images the infrared spot of the LED module 156 within a predetermined screen. An arithmetic processing circuit 161 is connected to the image processing circuit 159. The arithmetic processing circuit 161 generates infrared spot information. In this infrared spot information, the position and size of the infrared spot are specified in a predetermined screen. The position of the infrared spot corresponds to the position of the LED module 156. The size of the infrared spot corresponds to the distance from the LED module 156. A wireless module 162 is connected to the arithmetic processing circuit 161. The infrared spot information is sent from the wireless module 162 to the game machine body 153. Here, the operation switch 163 and the acceleration sensor 164 are connected to the arithmetic processing circuit 161. An operation signal of the operation switch 163 and acceleration information of the acceleration sensor 164 are supplied from the wireless module 162 to the game machine body 153. The game machine body 153 receives operation signals, infrared spot information, and acceleration information by the wireless module 165. The processor 166 in the game machine main body 153 specifies the operation of the operation switch 163 based on the operation signal, and specifies the movement of the controller 155 based on the infrared spot information and the acceleration information. Thus, the game machine main body 153 can be controlled in accordance with the operation of the operation switch 163 and the movement of the controller 155. The LED module 156 can be connected to the processor 166. The processor 166 can control the operation of the LED module.

  Although the present embodiment has been described in detail as described above, it will be easily understood by those skilled in the art that many modifications can be made without departing from the novel matters and effects of the present invention. Therefore, all such modifications are included in the scope of the present invention. For example, a term described with a different term having a broader meaning or the same meaning at least once in the specification or the drawings can be replaced with the different term in any part of the specification or the drawings. In addition, the configuration of the photodetector package 11, the thermal detection element 18, the terahertz camera 101, the infrared camera 121, the FA device 131, the electric device, the home appliance, the human sensor 138, the game machine 152, the game machine controller 155, etc. The operation is not limited to that described in the present embodiment, and various modifications are possible.

  DESCRIPTION OF SYMBOLS 11 Thermal type electromagnetic wave detector (photodetector package), 12 1st board | substrate (integrated circuit (IC) board | substrate), 13 2nd board | substrate (sensor board | substrate), 18 Thermal type electromagnetic wave detection element (thermal type optical detection element), 19 Sealed body, 21 vacuum space (sealed space), 22 antireflection film, 25 membrane, 25a silicon oxide layer (first silicon oxide layer), 25b silicon nitride layer, 25c silicon oxide layer (second silicon oxide layer), 26 Spatial layer, 27 support arm, 28 connection terminal (first connection terminal), 29 connection terminal (second connection terminal), 34 substrate, 72 light absorber, 101 electronic device (terahertz camera), 111 processing circuit (arithmetic processing) Circuit), 121 electronic equipment (infrared camera), 125 processing circuit (arithmetic processing circuit), 131 electronic equipment (factory automation equipment), 13 Processing circuit (control circuit), 136 Electronic device (electrical device and home appliance), 139 Processing circuit (determination circuit), 141 Electronic device (driving support device), 146 Processing circuit, 152 Electronic device (game machine), 155 Electronic device (Game machine controller), 161 processing circuit (arithmetic processing circuit).

Claims (11)

A first substrate including an integrated circuit;
A first surface facing the surface of the first substrate, and a connection terminal disposed on the first surface that is electrically connected to the integrated circuit and transmits at least a portion of an electromagnetic wave having a specific wavelength; A second substrate formed automatically,
A thermal electromagnetic wave detecting element located on the first surface of the second substrate and electrically connected to the connection terminal;
A sealing body that surrounds at least the thermal electromagnetic wave detection element between the first substrate and the second substrate;
A thermal electromagnetic wave detector, wherein at least the thermal electromagnetic wave detection element is sealed with the first substrate, the second substrate, and the sealing body.   The thermal electromagnetic wave detector according to claim 1, wherein the sealing body is sandwiched between the first substrate and the second substrate, and is at least between the first substrate and the second substrate. A thermal electromagnetic wave detector characterized by forming a vacuum space for accommodating the thermal electromagnetic wave detection element.   3. The thermal electromagnetic wave detector according to claim 2, wherein the second substrate includes a base, a membrane that supports the thermal electromagnetic wave detection element on a space layer formed on a surface of the base, and the base on the base. A thermal electromagnetic wave detector comprising a support arm for connecting the membrane.   4. The thermal electromagnetic wave detector according to claim 3, wherein an electromagnetic wave absorbing material is sandwiched between the membrane and the thermal electromagnetic wave detection element.   5. The thermal electromagnetic wave detector according to claim 1, wherein an antireflection film is formed on the second surface of the second substrate on the back side of the first surface. Type electromagnetic wave detector.   The thermal electromagnetic wave detector according to any one of claims 1 to 5, wherein the membrane is formed of a laminated film of different materials.   The thermal electromagnetic wave detector according to claim 6, wherein the laminated film includes a silicon oxide layer and a silicon nitride layer.   The thermal electromagnetic wave detector according to any one of claims 1 to 7, wherein the sealing body is made of metal, and the sealing body is dropped to a ground potential. .   An electronic apparatus comprising: the thermal electromagnetic wave detector according to claim 1; and a processing circuit that processes an output of the thermal electromagnetic wave detector. A first substrate including an integrated circuit;
A first surface facing the surface of the first substrate, and a connection terminal disposed on the first surface that is electrically connected to the integrated circuit and transmits at least a portion of an electromagnetic wave having a specific wavelength; A second substrate formed automatically,
A thermal electromagnetic wave detecting element located on the first surface of the second substrate and electrically connected to the connection terminal;
A sealing body that surrounds at least the thermal electromagnetic wave detection element between the first substrate and the second substrate;
A processing circuit connected to the integrated circuit for processing the output of the integrated circuit,
An electronic apparatus, wherein at least the thermal electromagnetic wave detecting element is sealed with the first substrate, the second substrate, and the sealing body. An electromagnetic source that emits terahertz electromagnetic waves;
A first substrate including an integrated circuit;
A first surface facing the surface of the first substrate, and a connection terminal disposed on the first surface that is electrically connected to the integrated circuit and transmits at least a portion of an electromagnetic wave having a specific wavelength; A second substrate formed automatically,
A thermal electromagnetic wave detecting element that is located on the first surface of the second substrate and is electrically connected to the connection terminal and converts electromagnetic waves in a terahertz band into electricity;
A sealing body that surrounds at least the thermal electromagnetic wave detection element between the first substrate and the second substrate;
A processing circuit connected to the integrated circuit for processing the output of the integrated circuit,
A terahertz camera, wherein at least the thermal electromagnetic wave detection element is sealed with the first substrate, the second substrate, and the sealing body.

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