JP2013033640A - Electron beam excited light source device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam excitation type light source device capable of efficiently irradiating one surface of a semiconductor light emitting element with an electron beam from an electron beam source device and obtaining a high light output.
An electron beam excitation device comprising an electron beam source device and a semiconductor light emitting element that emits ultraviolet light when excited by an electron beam emitted from the electron beam source device is disposed inside a vacuum vessel. In the light source device, the semiconductor light emitting element is provided with a conductive charge removal member for removing charges on one surface on which the electron beam from the electron beam source device is incident.
[Selection] Figure 3

Description

  The present invention relates to an electron beam excitation light source device that emits light from a semiconductor light emitting element by irradiating the semiconductor light emitting element with an electron beam from an electron beam source apparatus.

  An electron beam excitation light source device that emits light from a semiconductor light emitting element by irradiating an electron beam is expected as a light source that emits ultraviolet light with a small size and high output. For example, Patent Document 1 discloses a light source device as shown in FIG. Reflecting layers 73a and 73b made of Al, Ag or the like on both surfaces of the electron beam 75 from the electron gun 75 provided inside the glass bulb 71 whose interior is kept at a high vacuum are provided on the inner surface of the face plate 72. An electron beam excitation type light source device that emits ultraviolet laser light by irradiating the semiconductor light emitting element 74 in which is disposed and exciting the semiconductor light emitting element 74 is described. Further, in Patent Document 2, as shown in FIG. 7, in a vacuum container 80 having a light transmission window 81 sealed inside in a negative pressure state, light reflecting members 83, A laser structure 85 in which 84 is disposed is disposed on the inner surface of the light transmission window 81, and an electron beam source 86 that irradiates the semiconductor light emitting element 82 with an electron beam on the inner surface of the bottom wall of the vacuum vessel 80 is a laser. An electron beam excitation light source device that emits ultraviolet laser light disposed to face the structure 85 is described.

Japanese Patent Laid-Open No. 06-303625 Japanese Patent No. 3667188

  Thus, in the electron beam excitation light source device, as the semiconductor light emitting element, for example, a semiconductor light emitting device in which a plurality of semiconductor layers are stacked by crystal growth is used. As electrons are emitted from an electron beam source to one surface of the semiconductor light emitting device as the output of the device increases and the size of the device decreases, one surface of the semiconductor light emitting device or the surrounding surface of the one surface side is affected by the collision of electrons. It turned out that electric charge accumulated on the side surface and charged up. As a result, the electron beam emitted from the electron beam source changes, or the electron beam from the electron beam source is repelled by one surface of the semiconductor light emitting element. Cannot be efficiently incident on one surface of the semiconductor light emitting device, resulting in a problem that the light emission efficiency is lowered.

  The present invention has been made based on the circumstances as described above, and can efficiently irradiate one surface of a semiconductor light emitting element with an electron beam from an electron beam source device, thereby obtaining a high light output. An object is to provide an electron beam excitation type light source device.

The electron beam excitation light source device of the present invention includes an electron beam source device and a semiconductor light emitting element that emits ultraviolet light when excited by an electron beam emitted from the electron beam source device. In the electron beam excitation type light source device thus formed,
The semiconductor light emitting element is provided with a conductive charge-removing member for removing charges on one surface on which an electron beam from the electron beam source device is incident.

In the electron beam excitation light source device of the present invention, the semiconductor light emitting element is fixed to the vacuum vessel via a conductive support,
The static elimination member is preferably configured to be electrically connected to the conductive support.

  According to the electron beam excitation type light source device of the present invention, by being configured to be provided with a charge eliminating member for removing charges on one surface irradiated with the electron beam from the electron beam source device in the semiconductor light emitting element, Since it is prevented or suppressed that charges are accumulated by irradiation of the electron beam from the electron beam source device on one surface of the semiconductor light emitting element that is irradiated with the electron beam from the electron beam source device, It is possible to efficiently irradiate one surface of the semiconductor light emitting element with an electron beam and obtain a high light output.

It is explanatory drawing which shows the outline of a structure in an example of the electron beam excitation light source device of this invention, (A) is side surface sectional drawing, (B) is a top view which shows the state which removed the light transmissive window. It is an AA line expanded sectional view in Drawing 1 (B) showing roughly composition of an electron beam source device in an electron beam excitation type light source device shown in Drawing 1. It is sectional drawing for description which shows the outline of a structure of the semiconductor light-emitting element in the electron beam excitation type light source device shown in FIG. FIG. 3 is an explanatory cross-sectional view illustrating a configuration of a semiconductor light emitting element in a comparative electron beam excitation light source device manufactured in Example 1. It is an idea figure which shows the outline of the structure in the other example of the electron beam excitation type light source device of this invention. It is sectional drawing for description which shows the outline of a structure in an example of the conventional electron beam excitation type light source device. It is sectional drawing for description which shows the outline of a structure in the other example of the conventional electron beam excitation type light source device.

Hereinafter, embodiments of the present invention will be described in detail.
1A and 1B are explanatory views showing an outline of a configuration in an example of an electron beam excitation type light source device of the present invention, wherein FIG. 1A is a side sectional view, and FIG. 1B is a plan view showing a state where a light transmission window is removed; FIG. 2 is an enlarged cross-sectional view taken along line AA in FIG. 1B schematically showing the configuration of the electron beam source device in the electron beam excitation light source device shown in FIG. In FIG. 1B, for convenience, the electron beam source device is hatched.
This electron beam excitation type light source device includes a vacuum container 10 whose outer shape is sealed with a negative pressure inside and has a rectangular parallelepiped shape, and one (upward in FIG. 1A) of the vacuum container 10 is open. In addition, a container base 11 having a through-hole at the center position of the bottom wall, a light transmission window 15 disposed so as to close the upper opening of the container base 11 and hermetically sealed to the container base 11, The semiconductor light emitting element holding member 18 is inserted into a through hole in the bottom wall and hermetically sealed to the container base 11.

Inside the vacuum vessel 10, the semiconductor light emitting element 20 is arranged so that one surface (the upper surface in FIG. 1A) 20 a faces the light transmission window 15, and the peripheral region of the semiconductor light emitting element 20, specifically Specifically, an electron beam source device 30 having a planar electron beam emitting portion 32 in a region close to the semiconductor light emitting device 20 other than a region on one surface of the semiconductor light emitting device 20 and a region on the opposite other surface. Is disposed so as to surround the semiconductor light emitting element 20. In the illustrated example, the electron beam source device 30 is configured as an annular band, and the surface 20 a on which the electron beam of the semiconductor light emitting element 20 is incident is the surface 20 a on which the electron beam is emitted in the electron beam emitter 32. The semiconductor substrate 20 is disposed so as to surround the semiconductor light emitting element 20 in a posture facing the same direction as the light transmitting window 15 of the vacuum vessel 10, and in this state, the container base 11 in the vacuum vessel 10 is interposed via the support member 37. It is fixed to the bottom wall. The semiconductor light emitting element 20 and the electron beam source device 30 are provided outside the vacuum vessel 10 via conductive wires (indicated by a two-dot chain line in FIG. 1A) drawn from the inside of the vacuum vessel 10 to the outside. The electron accelerating means 55 for applying the acceleration voltage is electrically connected so that the semiconductor light emitting element 20 is a positive electrode and the electron beam source device 30 is a negative electrode.
In addition, the semiconductor light emitting element 20 includes the conductive support 16 provided on the one surface (the upper surface in FIG. 1A) of the semiconductor light emitting element holding member 18 with the other surface 20b facing the one surface 20a on which the electron beam is incident. And fixed to the semiconductor light emitting element holding member 18.

  Then, at a position outside the electron beam source device 30 with respect to the semiconductor light emitting element 20, the trajectory of the electron beam emitted from the electron beam source device 30 is directed to one surface 20a where light in the semiconductor light emitting element 20 is emitted. An electric field control electrode 50 is arranged to be directed. Specifically, the electric field control electrode 50 has a body 51 having an inner diameter larger than the outer diameter of the electron beam source device 30 and a tip (in FIG. 1A) formed continuously to the body 51. It is comprised by the cylindrical body which consists of the taper part 52 which becomes a small diameter toward an upper end. The electric field control electrode 50 is disposed so as to surround the outer periphery of the electron beam source device 30, and the base end of the electric field control electrode 50 is fixed to the bottom wall of the container base 11 in the vacuum container 10. The electron beam source device 30 and the electric field control electrode 50 are connected to the outside of the vacuum vessel 10 via a conductive wire (indicated by a two-dot chain line in FIG. 1A) drawn from the inside of the vacuum vessel 10 to the outside. The electron beam source device 30 is electrically connected to the provided electric field control power source 57 so that the positive electrode and the electric field control electrode 50 are negative.

As a material constituting the container base 11 in the vacuum container 10, a glass material such as Kovar glass or quartz glass can be used.
Moreover, as a material which comprises the light transmission window 15 in the vacuum vessel 10, the material which can permeate | transmit the light from the semiconductor light-emitting device 20 is used, For example, sapphire, quartz glass, etc. can be used.
Moreover, the pressure inside the vacuum vessel 10 is, for example, 10 ⁻⁴ to 10 ⁻⁶ Pa.

The material constituting the semiconductor light emitting element holding member 18 is preferably a material having a coefficient of thermal expansion that approximates the coefficient of thermal expansion of the material constituting the container base 11. For example, Kovar glass is used as the material of the container base 11. In this case, for example, Kovar metal can be used.
As a material constituting the conductive support 16, a metal having high thermal conductivity such as copper can be used.

The electron beam source device 30 in this example includes a cathode electrode 31 having a planar electron beam emitting portion 32 as shown in FIG. The cathode electrode 31 is configured by forming an electron beam emitting layer 31a on the entire peripheral surface of the cathode substrate 31b. The electron beam emitting layer 31a is formed by supporting a large number of carbon nanotubes on the surface of the cathode substrate 31b.
A method for forming the electron beam emitting layer 31a made of carbon nanotubes on the cathode substrate 31b is not particularly limited, and a known method can be used. For example, the cathode substrate 31b having a metal catalyst layer formed on the surface is heated, By supplying a carbon source gas such as CO or acetylene, carbon was deposited on the metal catalyst layer formed on the surface of the cathode substrate 31b to form carbon nanotubes, and formed by a thermal CVD method, an arc discharge method, or the like. A screen printing method in which a carbon nanotube powder and an organic binder are contained in a liquid medium is prepared, and this paste is applied to the surface of the cathode substrate 31b by screen printing and dried. .
The cathode electrode 31 is disposed on one surface of a base frame 36 provided on one surface of a plate-like base 35 made of ceramics such as alumina.

  In the electron beam source device 30, a shield member 40 that shields an electron beam going outward in the surface direction of the electron beam emission surface 32 a in the electron beam emission part 32 is provided on one surface of the base frame 36 at a position lateral to the cathode electrode 31. It is fixed on the top. The shield member 40 includes a body 41 that surrounds both sides of the cathode electrode 31, and a surface direction of the electron beam emission surface 32 a along the periphery of the electron beam emission surface 32 a of the cathode electrode 31 that is continuous with the tip of the body 41. The cathode electrode 31 is held and fixed by an inner surface of the flange portion 42 and one surface of the base frame 36. The flange portion 42 is formed to extend inward.

Above the cathode electrode 31, a net-like electron extraction electrode (grid electrode) 46 for emitting an electron beam from the electron beam emitting portion 32 is disposed so as to face the electron beam emitting portion 32 in a spaced manner.
The electron extraction electrode 46 is fixed on one surface of the tip 48a of the cap member 48 having a tip that curves in an arc. The cap member 48 is configured such that the inner surface of the distal end portion 48a is brought into contact with a part of one surface of the plate-like base frame 39 fixed to the outer position of the base frame 36 on one surface of the base 35 (the same potential). And so on). Here, the separation distance (gap) between the electron beam emission surface 32a in each electron beam emission part 32 of the electron extraction electrode 46 and the cathode electrode 31 is, for example, 100 to 1000 μm.

In the above, examples of the material constituting the cathode substrate 31b, the shield member 40, the base frames 36 and 39, the electron extraction electrode 46, and the cap member 48 in the cathode electrode 31 include an alloy containing at least one of iron and nickel. Can be used.
The cathode electrode 31 and the electron extraction electrode 46 are provided outside the vacuum vessel 10 through conductive wires (indicated by a two-dot chain line in FIG. 1A) drawn from the inside of the vacuum vessel 10 to the outside. , And is electrically connected to an electron beam emission power source 56.

As shown in FIG. 3, the semiconductor light emitting device 20 is formed on a substrate 21 made of, for example, sapphire, a buffer layer 22 made of, for example, AlN formed on one surface of the substrate 21, and on one surface of the buffer layer 22. In addition, the substrate 21 is composed of an active layer 25 having a single quantum well structure or a multiple quantum well structure, and the substrate 21 is in a state where the active layer 25 faces the light transmission window 15 in the vacuum vessel 10. For example, the conductive adhesive S is joined.
The thickness of the substrate 21 is, for example, 10 to 1000 μm, and the thickness of the buffer layer 22 is, for example, 100 to 1000 nm.
Moreover, the separation distance between the active layer 25 and the electron beam source device 30 in the semiconductor light emitting element 20 is, for example, 5 to 15 mm.
Further, the distance between one surface 20a from which light is emitted in the semiconductor light emitting element 20 and the inner surface of the light transmission window 15 is, for example, 3 to 25 mm.

Each of the active layers 25 has a single quantum well structure or a multiple quantum well structure composed of In _x Al _y Ga _1-xy N (0 ≦ x <1, 0 <y ≦ 1, x + y ≦ 1). One or a plurality of quantum well layers 26 and a single or a plurality of barrier layers 27 are alternately stacked on the buffer layer 22 in this order.
The thickness of each quantum well layer 26 is, for example, 0.5 to 50 nm. The barrier layer 27 has a composition selected such that the forbidden band width is larger than that of the quantum well layer 26. For example, AlN may be used, and each thickness is larger than the well width of the quantum well layer 26. It is set to be large, specifically, for example, 1 to 100 nm.
The period of the quantum well layer 26 constituting the active layer 25 is appropriately set in consideration of the total thickness of the quantum well layer 26, the barrier layer 27 and the active layer 25, the acceleration voltage of the electron beam used, etc. 1 to 100.

The semiconductor light emitting element 20 can be formed by, for example, MOCVD (metal organic chemical vapor deposition). Specifically, by using a carrier gas composed of hydrogen and nitrogen and a source gas composed of trimethylaluminum and ammonia, vapor deposition is performed on the (0001) plane of the sapphire substrate 21 to have a required thickness. After forming the buffer layer 22 made of AlN, vapor phase growth is performed on the buffer layer 22 using a carrier gas made of hydrogen gas and nitrogen gas and a source gas made of trimethylaluminum, trimethylgallium, trimethylindium and ammonia. To have a single quantum well structure or a multiple quantum well structure made of In _x Al _y Ga _1-xy N (0 ≦ x <1, 0 <y ≦ 1, x + y ≦ 1) having a required thickness. By forming the layer 25, the semiconductor light emitting device 20 can be formed.

In each step of forming the buffer layer 22, the quantum well layer 26, and the barrier layer 27, conditions such as a processing temperature, a processing pressure, and a growth rate of each layer are determined according to the buffer layer 22, the quantum well layer 26, and the barrier layer 27 to be formed. It can set suitably according to a composition, thickness, etc. of this.
In addition, when forming the quantum well layer 26 made of InAlGaN, trimethylindium is used as a source gas in addition to the above, and the processing temperature is set lower than when the quantum well layer 26 made of AlGaN is formed. That's fine.
The method for forming the semiconductor multilayer film is not limited to the MOCVD method, and for example, an MBE method (molecular beam epitaxy method) or the like can also be used.

Thus, in the electron beam excitation light source device of the present invention, a conductive charge-removing member for removing charges on at least one surface 20 a on which the electron beam from the electron beam source device 30 is incident on the semiconductor light emitting element 20. Is provided.
In the electron beam excitation light source device according to this embodiment, the static elimination member is constituted by, for example, the conductive film 28 provided so as to cover the outer peripheral side surface of the semiconductor light emitting element 20 and the outer peripheral edge portion of the one surface 20a. The conductive film 28 is electrically connected to the conductive support 16 or electrically connected via the lead portion 28a.

As a material for forming the conductive film 28, for example, Ag paste, Al paste, silver brazing, or the like can be used.
The thickness of the conductive film 28 is, for example, 1 to 100 μm.

  In the electron beam excitation light source device, when a voltage is applied between the electron beam source device 30 and the electron extraction electrode 46, the electron beam emission unit 32 in the electron beam source device 30 applies the electron extraction electrode 46. The electrons are emitted toward the semiconductor light emitting element 20 by an acceleration voltage applied between the semiconductor light emitting element 20 and the electron beam source device 30 to form an electron beam. This electron beam trajectory is a surface 20 a on which light in the semiconductor light emitting element 20 is emitted by the acceleration voltage and the voltage applied between the electron beam source device 30 and the electric field control electrode 50 by the electric field control power source 57. As a result, the electron beam is incident on one surface 20 a of the semiconductor light emitting device 20, that is, the surface of the active layer 25. In the semiconductor light emitting device 20, electrons in the active layer 25 are excited by the incidence of the electron beam, and as a result, light such as ultraviolet rays is emitted from the one surface 20 a on which the electron beam in the semiconductor light emitting device 20 is incident. Then, the light is emitted to the outside of the vacuum vessel 10 through the light transmission window 15 in the vacuum vessel 10.

In the above, the voltage applied between the electron beam source device 30 and the electron extraction electrode 46 by the electron beam emission power source 56 is, for example, 1 to 5 kV.
Moreover, it is preferable that the acceleration voltage of the electron beam applied by the electron acceleration means 55 is 6-12 kV. When the acceleration voltage is too small, it becomes difficult to obtain a high light output. On the other hand, if the acceleration voltage is excessive, X-rays are likely to be generated from the semiconductor light emitting element 20, and the semiconductor light emitting element 20 is easily damaged by the energy of the electron beam, which is not preferable.
The voltage applied between the electron beam source device 30 and the electric field control electrode 50 by the electric field control power source 57 is, for example, −2 to 2 kV.

  Thus, according to the above-described electron beam excitation light source device, the outer peripheral side surface of the semiconductor light emitting element 20 and the outer peripheral edge portion of the one surface 20a on which the electron beam from the electron beam source device 30 is incident are provided. The provision of the charge removal member made of the conductive film 28 prevents or suppresses charge accumulation on the one surface 20a of the semiconductor light emitting element 20 due to irradiation of the electron beam from the electron beam source device 30. It can be avoided that the trajectory of the electron beam emitted from the radiation source device 30 is changed, or that the electron from the electron beam source device 30 is repelled by the one surface 20a of the semiconductor light emitting element 20. The one surface 20a of the semiconductor light emitting element 20 can be efficiently irradiated with the electron beam from the source device 30, and thus high light output (light emission efficiency) can be obtained.

  Furthermore, since the light is emitted from the one surface 20a on which the electron beam from the electron beam source device 30 is incident on the semiconductor light emitting element 20, the one surface 20a on the semiconductor light emitting element 20 on which the electron beam is incident. It is possible to cool the semiconductor light emitting element 20 through the conductive support 16 from the other surface 20b facing the substrate. Therefore, since the semiconductor light emitting element 20 can be efficiently cooled, the light output efficiency of the semiconductor light emitting element 20 is not lowered in this respect, and high output light is maintained.

An electron beam excitation type light source device according to the present invention was fabricated according to the configuration shown in FIGS. The specifications of this electron beam excitation light source device are as follows.
[Vacuum container (10)]
Container base (11): Material: Kovar glass, external dimensions: 40 mm × 40 mm × 20 mm, wall thickness: 2 mm, opening: 36 mm × 36 mm,
Light transmission window (15): material: sapphire, dimensions: 40 mm × 40 mm × 2 mm,
[Electron beam source device (30)]
Electron beam emitting portion (32): outer diameter: 24 mm, inner diameter: 20 mm, thickness: 0.02 mm, area of the surface from which the electron beam is emitted: 138 mm ²
[Semiconductor Light Emitting Element (20)]
Substrate (21): material: sapphire, thickness: 400 μm,
Buffer layer (22): material: GaN, thickness: 2 μm,
Active layer (25): Material of quantum well layer (26); InGaN, thickness of quantum well layer (26); 3 nm, material of barrier layer (27); GaN, thickness of barrier layer (27); 18 nm, quantum well Period of layer (26); 6,
Conductive film (28): Material: Ag, thickness 500 μm,

  Moreover, in the electron beam excitation type light source device produced in the above, as shown in FIG. 4, the electron beam excitation type light source device according to the present invention has the configuration other than having a charge-up suppressing member. A comparative electron beam excitation type light source device including the semiconductor light emitting element 201 having the same configuration as the above was fabricated.

The light output and luminous efficiency when the electron beam excitation light source device according to the present invention and the comparative electron beam excitation light source device were operated under the following operating conditions were measured. The results are shown in Table 1 below. In Table 1, the light output value and the light emission efficiency value in the electron beam excitation light source device according to the present invention are both relative to the light output value and the light emission efficiency value in the comparative electron beam excitation light source device. Indicates the value.
<Operating conditions>
Voltage applied between the electron beam source device and the extraction electrode; 2 kV,
Electron beam acceleration voltage: 8 kV
Voltage applied between the electron beam source device and the electric field control electrode: 1 kV,
Input power to the semiconductor light emitting device: 32 mW

  From the above results, according to the electron beam excitation light source device according to the present invention in which the semiconductor light emitting element is provided with the charge eliminating member, a light output 20 times larger than that of the comparative electron beam excitation light source device can be obtained. It was confirmed.

As mentioned above, although embodiment of this invention was described, this invention is not limited to said embodiment, A various change can be added.
For example, the conductive film constituting the static elimination member is formed so as to necessarily cover the outer peripheral edge portion of the surface irradiated with the electron beam from the electron beam source device in the semiconductor light emitting element and the entire outer peripheral side surface of the semiconductor light emitting element. The effect can be expected even when the semiconductor light emitting element is formed on at least a part of the outer peripheral edge of the surface irradiated with the electron beam from the electron beam source device and the outer peripheral side surface of the semiconductor light emitting element.
Moreover, the static elimination member may be comprised by the electroconductive film formed by patterning the surface irradiated with the electron beam from the electron beam source apparatus in a semiconductor light-emitting device, for example, the electroconductive film which has an opening.

  In the above-described embodiment, the semiconductor light emitting device has been described in which light is emitted from one surface on which an electron beam is incident. However, as shown in FIG. The surface of 32 is arranged in a state of facing one surface of the semiconductor light emitting element 20, and an electron beam from the electron beam source device 30 is incident on one surface of the semiconductor light emitting element 20 to be emitted from the other surface of the semiconductor light emitting element 20. The light may be emitted through the light transmission window 15.

  Furthermore, as long as the electron beam source device has a planar electron beam emitting portion, the specific shape is not particularly limited, and the electron beam source device is not limited to one made of carbon nanotubes. The arrangement position of the electron beam source is not particularly limited as long as the electron beam source is positioned around the semiconductor light emitting element and can enter the electron beam on the light emitting surface of the semiconductor light emitting element.

DESCRIPTION OF SYMBOLS 10 Vacuum vessel 11 Container base | substrate 15 Light transmission window 16 Conductive support 18 Semiconductor light emitting element holding member 20,201 Semiconductor light emitting element 20a One side 20b Other side 21 Substrate 22 Buffer layer 25 Active layer 26 Quantum well layer 27 Barrier layer 28 Conductivity Film 28a Lead part S Conductive adhesive 30 Electron beam source device 31 Cathode electrode 31a Electron beam emission layer 31b Cathode substrate 32 Electron beam emission part 32a Electron beam emission surface 35 Base 36 Base frame 37 Support member 39 Base frame 40 Shield member 41 Body portion 42 Flange portion 46 Electron extraction electrode 48 Cap member 48a Tip portion 50 Electric field control electrode 51 Body portion 52 Taper portion 55 Electron accelerating means 56 Electron emission power source 57 Electric field control power source 71 Glass valve 72 Face plates 73a and 73b Reflection Layer 74 Semiconductor light emitting device 75 electron Gun 80 Vacuum container 81 Light transmitting window 82 Semiconductor light emitting element 83, 84 Light reflecting member 85 Laser structure 86 Electron beam source 87 Electron acceleration means

Claims (2)

In an electron beam excitation light source device in which an electron beam source device and a semiconductor light emitting element that emits ultraviolet light by being excited by an electron beam emitted from the electron beam source device are disposed inside a vacuum vessel,
2. The electron beam excitation type light source device according to claim 1, wherein the semiconductor light emitting element is provided with a conductive charge eliminating member for removing charges on one surface on which an electron beam from the electron beam source device is incident. The semiconductor light emitting element is fixed to the vacuum vessel via a conductive support,
The electron beam excitation light source device according to claim 1, wherein the charge removal member is electrically connected to the conductive support.

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