CN102916337A - Electron-beam excitation type light source device - Google Patents

Abstract

Provided is an electron beam pumped light source device capable of efficiently irradiating electron beams from an electron beam source device onto one side of a semiconductor light emitting element and capable of obtaining high light output. In this electron beam excitation type light source device, an electron beam source device and a semiconductor light-emitting element are arranged inside a vacuum container, and the semiconductor light-emitting element is excited by an electron beam emitted from the electron beam source device to emit ultraviolet light, and is configured as follows: The semiconductor light emitting element is provided with a conductive static removing member for removing charges on a surface on which electron beams from the electron beam source device are incident.

Description

Electron beam excited light source device

technical field

The present invention relates to an electron beam excitation type light source device, which makes the semiconductor light emitting element emit light by irradiating electron beams from an electron beam source device onto the semiconductor light emitting element.

Background technique

An electron beam excitation type light source device that emits light from a semiconductor light emitting element by irradiating electron beams is expected as a small and high output ultraviolet light emitting light source. For example, the electron beam excitation type light source device described in Patent Document 1 is, As shown in FIG. 6, an electron beam from an electron gun 75 is irradiated onto a semiconductor light-emitting element 74, and ultraviolet laser light is emitted by exciting the semiconductor light-emitting element 74. 71, the semiconductor light emitting element 74 is provided on the inner surface of the panel 72, and reflective layers 73a, 73b made of Al, Ag, etc. are arranged on both surfaces. In addition, the electron beam excitation type light source device for emitting ultraviolet laser light described in Patent Document 2 is, as shown in FIG. On the inner surface of the light transmission window 81, a laser structure body 85 is arranged. Above, an electron beam source 86 for irradiating an electron beam onto a semiconductor light emitting element 82 is arranged to face the laser structure 85 .

Patent Document 1: Japanese Patent Application Laid-Open No. 06-303625

Patent Document 2: Japanese Patent No. 3667188

Next, in the electron beam excitation type light source device, as a semiconductor light emitting element, for example, a component formed by stacking a plurality of semiconductor layers by crystal growth on an insulating substrate is used, but with the high output of the electron beam excitation type light source device and Miniaturization, found that when the electrons emitted from the electron beam source are irradiated on one side of the semiconductor light-emitting element, due to the collision of the electrons, charges will be accumulated on one side of the semiconductor light-emitting element or on the peripheral side of the side and be destroyed. Charge. As a result, there is a problem that the electrons from the electron beam source cannot be transferred due to the track change of the electron beam emitted from the electron beam source, or the electrons from the electron beam source are repelled by one side of the semiconductor light-emitting element. The beam is efficiently incident on one side of the semiconductor light emitting element, and the luminous efficiency is lowered.

Contents of the invention

The present invention is made based on the above circumstances, and provides an electron beam excitation type light source device capable of efficiently irradiating electron beams from an electron beam source device onto one side of a semiconductor light emitting element and obtaining high light output.

The electron beam excitation type light source device of the present invention is formed by arranging an electron beam source device and a semiconductor light-emitting element inside a vacuum container. The semiconductor light-emitting element is excited by the electron beam emitted from the electron beam source device to emit ultraviolet light. The beam excitation type light source device is characterized in that

The above-mentioned semiconductor light-emitting element is provided with a conductive static elimination member for removing charges on a surface on which electron beams from the above-mentioned electron beam source device are incident.

In the electron beam excited light source device according to the present invention, preferably, the semiconductor light emitting element is fixed in the vacuum container via a conductive support, and the static eliminating member is electrically connected to the conductive support.

Invention effect

According to the electron beam excitation type light source device of the present invention, by being configured to be provided with a static elimination member for removing the charge on the side of the semiconductor light emitting element irradiated with the electron beam from the electron beam source device, thereby preventing Or suppress accumulation of electric charge due to irradiation of electron beams from the electron beam source device on the side irradiated with electron beams from the electron beam source device on the side of the semiconductor light-emitting element, therefore, the electron beams from the electron beam source device can be efficiently used Irradiates on one side of the semiconductor light emitting element and can obtain high light output.

Description of drawings

1 is an explanatory diagram showing a schematic configuration of an example of an electron beam excitation type light source device of the present invention, (A) is a side sectional view, and (B) is a plan view showing a state where a light transmission window is removed.

FIG. 2 schematically shows the configuration of the electron beam source device of the electron beam excitation type light source device shown in FIG. 1 , and is an enlarged cross-sectional view taken along line AA of FIG. 1(B) .

3 is an explanatory cross-sectional view showing a schematic configuration of a semiconductor light emitting element of the electron beam excitation type light source device shown in FIG. 1 .

4 is an explanatory cross-sectional view showing the structure of a semiconductor light emitting element of a comparative electron beam excitation type light source device produced in Example 1. FIG.

5 is a schematic diagram showing a schematic configuration of another example of the electron beam excitation type light source device of the present invention.

6 is an explanatory cross-sectional view showing a schematic configuration of an example of a conventional electron beam excitation type light source device.

7 is an explanatory cross-sectional view showing a schematic configuration of another example of a conventional electron beam excitation type light source device.

Explanation of reference signs

10 vacuum containers

11 Container base

15 light transmission window

16 Conductive support

18 Semiconductor light emitting element holding part

20, 201 Semiconductor light-emitting elements

20a side

20b The other side

21 Substrate

22 buffer layer

25 active layers

26 quantum well layer

27 barrier layer

28 conductive film

28a Lead part

S Conductive adhesive

30 Electron beam source device

31 cathode electrode

31a Electron beam emitting layer

31b Cathode substrate

32 Electron beam emitting part

32a Electron beam emitting surface

35 substrate

36 pedestal

37 Support parts

39 pedestal

40 shield parts

41 Body

42 Flange

46 Electron extraction electrode

48 cap parts

48a front end

50 Electrodes for electric field control

51 Body

52 taper

55 Electron acceleration components

56 Power supply for electron beam emission

57 Power supply for electric field control

71 glass bulb

72 panels

73a, 73b reflective layer

74 semiconductor light emitting element

75 electron gun

80 vacuum container

81 light transmission window

82 semiconductor light emitting element

83, 84 Light reflection parts

85 laser construct

86 electron beam source

87 Electron acceleration components

Detailed ways

Hereinafter, embodiments of the present invention will be described in detail.

1 is an explanatory diagram showing a schematic configuration of an example of an electron beam excitation type light source device of the present invention, (A) is a side sectional view, (B) is a plan view showing a state where a light transmission window is removed, and FIG. 2 Schematically showing the configuration of the electron beam source device of the electron beam excitation type light source device shown in FIG. 1 , it is an enlarged cross-sectional view taken along line AA in FIG. 1(B) . Note that, in FIG. 1(B), the electron beam source device is hatched for convenience.

This electron beam excitation type light source device has: a vacuum container 10, the inside of which is sealed in a negative pressure state and has a rectangular parallelepiped shape. There is a through hole in the center of the bottom wall; the light transmission window 15 is configured to block the upper opening of the container base 11, and is hermetically packaged on the container base 11; the semiconductor light-emitting element holding part 18 is inserted into the container base 11 in the through hole of the bottom wall, and hermetically sealed on the container base 11.

In the vacuum container 10, the semiconductor light-emitting element 20 is arranged in such a way that its one side (the upper surface of FIG. An electron beam source device 30 having a planar electron beam emitting portion 32 is provided on a region close to the semiconductor light emitting element 20 other than the region on one side of the semiconductor light emitting element 20 and the region on the opposite opposite surface. It is arranged around the semiconductor light emitting element 20 . In the illustrated example, the electron beam source device 30 is configured as an annular strip, and the electron beam emitting surface of the electron beam emitting portion 32 is oriented in the same direction as the electron beam incident surface 20a of the semiconductor light emitting element 20. Direction posture, that is, the semiconductor light-emitting element 20 is arranged in a posture facing the light transmission window 15 of the vacuum container 10, and in this state, it is fixed on the bottom wall of the container base 11 of the vacuum container 10 via the supporting member 37. . The semiconductor light-emitting element 20 and the electron beam source device 30 are connected to the outside of the vacuum container 10 through a conductive wire (indicated by a two-dot chain line in FIG. 1(A)) drawn from the inside of the vacuum container 10 to the outside. The electron accelerating member 55 for applying an accelerating voltage is electrically connected such that the semiconductor light emitting element 20 is a positive electrode and the electron beam source device 30 is a negative electrode.

In addition, the semiconductor light emitting element 20 is arranged such that the other surface 20 b opposite to the one surface 20 a on which the electron beams enter is passed through the conductive support 16 provided on one surface (the upper surface of FIG. 1(A) ) of the semiconductor light emitting element holding member 18 . , is fixed on the semiconductor light emitting element holding member 18 .

Next, at a position outside the electron beam source device 30 relative to the semiconductor light emitting element 20, an electric field control electrode 50 is arranged so that the trajectory of the electron beam emitted from the electron beam device 30 is directed toward the semiconductor. The light emitting surface 20a of the light emitting element 20 is oriented. Specifically, the electrode 50 for electric field control includes: a body 51 having an inner diameter larger than the outer diameter of the electron beam source device 30; 1 (upper end of A)), the tapered portion 52 is formed with a diameter that becomes smaller in the direction. The electric field control electrode 50 is arranged to surround the outer periphery of the electron beam source device 30 , and the base end of the electric field control electrode 50 is fixed to the bottom wall of the container base 11 of the vacuum container 10 . The electron beam source device 30 and the electrode 50 for electric field control are connected to the outside of the vacuum vessel 10 through a conductive wire (indicated by a two-dot chain line in FIG. 1(A)) drawn from the inside of the vacuum vessel 10 to the outside. The electric field control power supply 57 is electrically connected so that the electron beam source device 30 is a positive pole and the electric field control electrode 50 is a negative pole.

As a material for the container base 11 constituting the vacuum container 10 , glass materials such as Kovar glass and quartz glass can be used.

In addition, as a material constituting the light transmission window 15 of the vacuum container 10, a material capable of transmitting light from the semiconductor light emitting element 20 can be used, for example, sapphire, quartz glass, or the like can be used.

In addition, the pressure inside the vacuum container 10 is, for example, 10 ^-4 to 10 ^-6 Pa.

As the material constituting the semiconductor light-emitting element holding member 18, a material having a thermal expansion coefficient close to that of the material constituting the container base 11 is preferable, for example, in the case of using Kovar glass for the material of the container base 11 Below, for example, Kovar metal or the like can be used.

As a material constituting the conductive support body 16 , a highly thermally conductive metal such as copper can be used.

An electron beam source device 30 of this example includes a cathode electrode 31 having a planar electron beam emitting portion 32 as shown in FIG. 2 . The cathode electrode 31 is configured such that an electron beam emitting layer 31a is formed on the entire peripheral surface of a cathode substrate 31b. The electron beam emitting layer 31a is formed by supporting a plurality of carbon nanotubes on the surface of the cathode substrate 31b.

As a method of forming the electron beam emitting layer 31a made of carbon nanotubes on the cathode substrate 31b, known methods can be used without particular limitation, and thermal CVD (thermal chemical vapor deposition method) and screen printing can be suitably used. In the thermal CVD method, for example, by heating the cathode substrate 31b with the metal catalyst layer formed on the surface, and supplying carbon source gas such as CO or acetylene, carbon is deposited on the metal catalyst layer formed on the surface of the cathode substrate 31b, And form carbon nanotubes; the screen printing method is to prepare a slurry formed by mixing carbon nanotube powder formed by an arc discharge method and an organic binder in a liquid medium, and pass the slurry through a screen The printing is applied on the surface of the cathode substrate 31b and dried.

The cathode electrode 31 is disposed on one surface of a base frame 36 provided on one surface of a plate-shaped base body 35 made of, for example, ceramics such as alumina.

In this electron beam source device 30, a shielding (shield, shielding) member 40 for shielding the electron beam facing outward in the surface direction of the electron beam emitting surface 32a of the electron beam emitting portion 32 is provided so as to be located on the cathode electrode 31. It is fixed on one side of the base frame 36 at the position of the side. The shield member 40 includes: a body portion 41 surrounding both sides of the cathode electrode 31; a flange portion 42 formed along the periphery of the electron beam emitting surface 32a of the cathode electrode 31 continuous with the front end of the body portion 41, and The cathode electrode 31 is held and fixed by the inner surface of the flange portion 42 and one surface of the base frame 36 .

Above the cathode electrode 31 , a mesh-shaped electron extracting electrode (grid electrode) 46 for emitting electron beams from the electron beam emitting portion 32 is arranged to face the electron beam emitting portion 32 away from it.

The electron extracting electrode 46 is fixed to one surface of the front end portion 48 a of the cap member 48 having an arc-shaped front end portion. The cap member 48 is provided so that the inner surface of the front end portion 48a is in contact with (so as to be at the same potential as) a part of one surface of a plate-shaped base frame 39 fixed to the base frame positioned on one surface of the base body 35 36 on the outside position. Here, the separation distance (gap) between the electron extraction electrode 46 and the electron beam emitting surface 32 a of each electron beam emitting portion 32 of the cathode electrode 31 is, for example, 100 to 1000 μm.

As mentioned above, as the material of the cathode substrate 31b, the shield member 40, the base frames 36, 39, the electron extraction electrode 46, and the cap member 48 constituting the cathode electrode 31, for example, an alloy containing at least one of iron or nickel can be used. wait.

The cathode electrode 31 and the electron extracting electrode 46 communicate with the electron beam installed outside the vacuum vessel 10 via a conductive wire drawn from the inside of the vacuum vessel 10 to the outside (indicated by a two-dot chain line in FIG. 1(A) ). The discharge power supply 56 is electrically connected.

As shown in FIG. 3, the semiconductor light-emitting element 20 includes: a substrate 21, such as being made of sapphire; a buffer layer 22, such as being made of AlN, formed on one side of the substrate 21; an active layer 25 having a single quantum well structure or multiple The quantum well structure is formed on one side of the buffer layer 22; in the state where the active layer 25 is opposed to the light transmission window 15 of the vacuum vessel 10, the substrate 21 and the conductive support 16 are bonded by, for example, a conductive adhesive S. join.

The thickness of the substrate 21 is, for example, 10-1000 μm; the thickness of the buffer layer 22 is, for example, 100-1000 nm.

In addition, the distance between the active layer 25 of the semiconductor light emitting element 20 and the electron beam source device 30 is, for example, 5 to 15 mm.

In addition, the distance between the light emitting surface 20a of the semiconductor light emitting element 20 and the inner surface of the light transmission window 15 is, for example, 3 to 25 mm.

The active layer 25 is a single quantum well structure or a multi-quantum well structure composed of In _x Al _y Ga _1-xy N (0≤x<1, 0<y≤1, x+y≤1), single or multiple quantum wells Layers 26 and one or more barrier rib layers 27 are alternately laminated in this order on the buffer layer 22 .

The respective thicknesses of the quantum well layers 26 are, for example, 0.5 to 50 nm. In addition, the barrier layer 27 is a composition whose forbidden band width is larger than the forbidden band width of the quantum well layer 26. AlN can be used as an example, and the respective thicknesses are set to be larger than the well width of the quantum well layer 26. Specifically, , such as 1 to 100 nm.

The period of the quantum well layer 26 constituting the active layer 25 can be appropriately set in consideration of the overall thickness of the quantum well layer 26, the barrier layer 27, and the active layer 25, the acceleration voltage of the electron beam used, etc., but is usually 1 to 100. .

The aforementioned semiconductor light emitting element 20 can be formed by, for example, MOCVD (metal organic chemical vapor deposition). Specifically, using a carrier gas composed of hydrogen and nitrogen and a raw material gas composed of trimethylaluminum and ammonia, the (0001) surface of the substrate 21 composed of sapphire is formed by vapor phase growth to form After the buffer layer 22 composed of AlN, using a carrier gas composed of hydrogen and nitrogen and a raw material gas composed of trimethylaluminum, trimethylgallium, trimethylindium, and ammonia, by performing vapor phase growth on the buffer layer 22 , forming an active layer with a single quantum well structure or a multiple quantum well structure composed of In _x Al _y Ga _1-xy N (0≤x<1, 0<y≤1, x+y≤1) with a desired thickness 25. Thus, the semiconductor light emitting element 20 can be formed.

In each formation step of the buffer layer 22, the quantum well layer 26, and the barrier rib layer 27, conditions such as the processing temperature, the processing pressure, and the growth rate of each layer can be determined according to the buffer layer 22, quantum well layer 26, and barrier rib layer to be formed. The composition, thickness, and the like of the layer 27 are appropriately set.

In addition, in the case of forming the quantum well layer 26 made of InAlGaN, trimethylindium may be used as a raw material gas other than the above-mentioned raw materials, as long as the processing temperature is set to be higher than that of forming the quantum well layer 26 made of AlGaN. The situation is still low.

In addition, the method of forming the semiconductor multilayer film is not limited to the MOCVD method, and for example, MBE method (molecular beam epitaxy) or the like may be used.

Next, in the electron beam excitation type light source device of the present invention, a conductive static removing member is provided on the semiconductor light emitting element 20, and the static removing member is used to remove at least the side on which the electron beam from the electron beam source device 30 is incident. Charge on 20a.

In the electron beam excitation type light source device of this embodiment, the static eliminating member is constituted by, for example, a conductive film 28 provided so as to cover the outer peripheral side surface of the semiconductor light emitting element 20 and the outer peripheral portion of one surface 20a, and the conductive film 28 and The electroconductive support body 16 is electrically connected, or is electrically connected via the lead part 28a.

As a material for forming the conductive film 28 , for example, silver paste (Ag paste), aluminum paste (Al paste), silver solder, or the like can be used.

The thickness of the conductive film 28 is, for example, 1 to 100 μm.

In the above electron beam excitation type light source device, when a voltage is applied between the electron beam source device 30 and the electron extraction electrode 46, electrons are emitted from the electron beam emission part 32 of the electron beam source device 30 toward the electron extraction electrode 46, The electrons are accelerated toward the semiconductor light emitting element 20 by the accelerating voltage applied between the semiconductor light emitting element 20 and the electron beam source device 30 to form an electron beam, and the trajectory of the electron beam passes through the accelerating voltage and the electric field control power supply 57 The voltage applied between the electron beam source device 30 and the electrode 50 for electric field control is directed toward the light emitting surface 20a of the semiconductor light emitting element 20, and as a result, the electron beam is incident on the surface 20a of the semiconductor light emitting element 20, That is, on the surface of the active layer 25 . Next, in the semiconductor light emitting element 20, electrons in the active layer 25 are excited by the incident electron beams, thereby emitting light such as ultraviolet rays from the surface 20a of the semiconductor light emitting element 20 on which the electron beams incident, and passing through the vacuum chamber 10. The light transmission window 15 emits to the outside of the vacuum container 10 .

As described above, the voltage applied between the electron beam source device 30 and the electron extraction electrode 46 by the electron beam emitting power supply 56 is, for example, 1 to 5 kV.

In addition, it is preferable that the acceleration voltage of the electron beam applied by the electron acceleration member 55 is 6 to 12 kV. At low accelerating voltages, it becomes difficult to obtain high light output. On the other hand, if the acceleration voltage is too high, X-rays are likely to be generated from the semiconductor light emitting element 20, and the semiconductor light emitting element 20 is easily damaged by the energy of the electron beam, so it is not recommended.

In addition, the voltage applied between the electron beam source device 30 and the electrode 50 for electric field control by the electric field control power supply 57 is, for example, −2 to 2 kV.

Next, according to the above-mentioned electron beam excitation type light source device, by including the charge removing member, thereby preventing or suppressing the charge accumulation on the one side 20a of the semiconductor light emitting element 20 due to the irradiation of the electron beam from the electron beam source device 30, the charge removing member It is composed of the conductive film 28 covering the outer peripheral side of the semiconductor light emitting element 20 and the outer peripheral edge portion of the surface 20a on which the electron beam from the electron beam source device 30 is incident, so that electrons emitted from the electron beam source device 30 can be avoided. The trajectory of the beam changes, or the electrons from the electron beam source device 30 are repelled by the one side 20a of the semiconductor light emitting element 20, and the electron beam from the electron beam source device 30 can be efficiently irradiated onto the one side 20a of the semiconductor light emitting element 20 , and therefore, high light output (luminous efficiency) can be obtained.

In addition, since the light is emitted from the surface 20a of the semiconductor light emitting element 20 on which the electron beams from the electron beam source device 30 are incident, light is emitted from the surface 20a facing the surface 20a on which the electron beams of the semiconductor light emitting element 20 are incident. The other surface 20 b can cool the semiconductor light emitting element 20 via the conductive support 16 . Thereby, the semiconductor light emitting element 20 can be efficiently cooled, and therefore, even in this point, the light emitting efficiency of the semiconductor light emitting element 20 is not lowered, and high output light is maintained.

(Example 1)

The electron beam excitation type light source device of the present invention was fabricated according to the configuration shown in FIGS. 1 to 3 . Specifications of this electron beam excitation type light source device are shown below.

[Vacuum container 10]

Container base 11: material: Kovar glass, dimensions: 40mm×40mm×20mm, thickness: 2mm, opening: 36mm×36mm;

Light transmission window 15: material: sapphire, size: 40mm×40mm×2mm;

[Electron beam source device 30]

Electron beam emitting part 32: outer diameter: 24 mm, inner diameter: 20 mm, thickness: 0.02 mm, area of the surface where the electron beam is emitted: 138 mm ² ;

[Semiconductor light emitting element 20]

Substrate 21: material: sapphire, thickness: 400 μm;

Buffer layer 22: material: GaN, thickness: 2 μm;

Active layer 25: material of quantum well layer 26: InGaN, thickness of quantum well layer 26: 3nm, material of barrier layer 27: GaN, thickness of barrier layer 27: 18nm, period of quantum well layer 26: 6;

Conductive film 28: material: Ag, thickness: 500 μm,

In addition, among the electron beam excitation type light source devices produced above, as shown in FIG. -up) Except for the configuration of the suppressing member, all have the same configuration as the members of the electron beam excitation type light source device of the present invention.

The light output and luminous efficiency were measured when the electron beam pumped light source device of the present invention and the comparative electron beam pumped light source device were operated under the operating conditions shown below. Table 1 below shows the results. In Table 1, the light output value and luminous efficiency value of the electron beam pumped light source device of the present invention are all shown relative to the light output value and luminous efficiency value of the comparative electron beam pumped light source device.

＜Operating conditions＞

Voltage applied between the electron beam source device and the extraction electrode: 2kV.

The accelerating voltage of the electron beam: 8kV.

Voltage applied between the electron beam source device and the electrode for electric field control: 1 kV.

Input power to the semiconductor light emitting element: 32mW.

Table 1

From the above results, it was confirmed that according to the electron beam pumped light source device of the present invention in which the static elimination member is provided on the semiconductor light emitting element, a light output 20 times larger than that of the comparative electron beam pumped light source device can be obtained.

As mentioned above, although embodiment of this invention was described, this invention is not limited to said embodiment, Various changes can be added.

For example, the conductive film constituting the static elimination member does not necessarily need to be formed so that the outer peripheral portion of the surface on which the electron beam from the electron beam source device of the semiconductor light-emitting element is irradiated and the entire outer peripheral side of the semiconductor light-emitting element are covered. As long as it is formed on the outer peripheral portion of the surface of the semiconductor light emitting element irradiated with electron beams from the electron beam source device and at least a part of the outer peripheral side of the semiconductor light emitting element, effects can be expected.

In addition, the static eliminating member may be constituted by a conductive film formed by patterning on the surface of the semiconductor light emitting element irradiated with electron beams from the electron beam source device, for example, a conductive film having openings.

In the above-mentioned embodiment, although the configuration of emitting light from the side of the incident electron beam of the semiconductor light-emitting element has been described, it may also be configured such that the electron beam source device 30 has an electron beam emitting part 32 as shown in FIG. The surface of the semiconductor light emitting element 20 is arranged in a state of facing one side of the semiconductor light emitting element 20, and the electron beam from the electron beam source device 30 is incident on one side of the semiconductor light emitting element 20, and the light emitted from the other side of the semiconductor light emitting element 20 passes through the light beam. The transmissive window 15 is shot out.

In addition, the electron beam source device is not particularly limited to its specific shape as long as it has a planar electron beam emitting portion, and is not limited to a member made of carbon nanotubes. In addition, the arrangement position of the electron beam source is not particularly limited as long as it is a position around the semiconductor light emitting element and allows electron beams to be incident on the light emitting surface of the semiconductor light emitting element.

Claims (2)

1. electron beam excitation formula light supply apparatus, internal configurations electron beam source device and semiconductor light-emitting elements at vacuum tank form, thereby this semiconductor light-emitting elements is by the electron beam excitation emitting ultraviolet light from this electron beam source device radiation, and this electron beam excitation formula light supply apparatus is characterised in that

At above-mentioned semiconductor light-emitting elements, be provided with for remove from the conductivity of the electric charge on the one side of the electron beam institute incident of above-mentioned electron beam source device except electric parts.

2. electron beam excitation formula light supply apparatus according to claim 1 is characterized in that,

Above-mentioned semiconductor light-emitting elements is fixed in the above-mentioned vacuum tank via the conductivity supporting mass;

Above-mentionedly be electrically connected with above-mentioned conductivity supporting mass except electric parts.

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