JP2013004905A - Semiconductor light-emitting device package and semiconductor light-emitting device - Google Patents

Abstract

The present invention provides a package for a semiconductor light-emitting device that prevents breakage such as chipping and has high strength and high heat dissipation, and a semiconductor light-emitting device using the same.
A resin molded body 2 includes a recess 8 for mounting a semiconductor light emitting element 5 on a first surface, the resin molded body contains polyorganosiloxane, and a bifunctional silicon content of the resin molded body. 5% by weight or more and 12% by weight or less, and the first lead frame 3a includes a first exposed lead part 11a exposed on the bottom surface of the concave part, a first external lead part 12a located outside the resin molded body, A first connecting lead portion 13a for connecting one end of the first exposed lead portion and the first external lead portion; a second extending from the other end of the first exposed lead portion toward the second surface opposite to the first surface; The second lead frame 3b includes a second exposed lead portion 11b, a second external lead portion 12b, and a second connecting lead portion 13b.
[Selection] Figure 2

Description

  The present invention relates to a package used for a semiconductor light emitting device and a semiconductor light emitting device manufactured by mounting a semiconductor light emitting element on the package.

  Conventionally, incandescent bulbs and fluorescent lamps have been widely used as light sources for light-emitting devices. In recent years, semiconductor light emitting devices using semiconductor light emitting elements such as light emitting diodes (LEDs) and organic EL (OLEDs) as a light source have attracted attention in order to reduce power consumption and downsize light emitting devices. Such semiconductor light emitting devices have been actively developed.

  As a semiconductor light emitting device using an LED chip, for example, a resin molded body having a recess for housing the LED chip, and a part of the resin molded body is embedded in the resin molded body. A lead frame partially exposed on the back or side of the LED, an LED chip housed in the recess and electrically connected to the lead frame, and filled in the recess to cover the LED chip What has a sealing material is generally known. For example, Patent Document 1 and Patent Document 2 disclose specific structures of such a semiconductor light emitting device.

  A semiconductor light emitting device disclosed in Patent Document 1 includes a lead electrode, a substrate integrally formed with the lead electrode, a semiconductor element disposed on the substrate, the lead electrode, and the semiconductor element. An electrically connecting wire. In Patent Document 1, a package for a semiconductor light emitting device is formed from a lead electrode and a substrate. On the tip portion of the lead electrode located on the mounting surface side of the semiconductor element, the substrate is provided with a convex portion or the like and raised one step. Or a structure in which the leading end portion of the lead electrode is lowered by one step toward the inside of the substrate. By using such a structure, it is possible to prevent peeling of the lead electrode from the substrate such that the lead electrode rises upward when bonding the wire.

  A semiconductor light emitting device disclosed in Patent Document 2 includes a lead frame, a synthetic resin base integrally molded with the lead frame, and a semiconductor light emitting element disposed inside a bathtub-shaped portion of the synthetic resin base. A bonding wire for connecting the semiconductor light emitting element to the lead frame; and a window portion made of a sealing material for filling the bathtub-shaped portion of the synthetic resin substrate to seal the semiconductor light emitting element. Yes. In particular, the semiconductor light emitting device has a structure in which most of the lead frame is covered with a synthetic resin substrate, and only a portion to which a bonding wire is connected is exposed on the bottom surface of the bathtub-shaped portion. That is, in the semiconductor light emitting device in Patent Document 2, the contact area between the lead frame and the sealing material is reduced. By such a structure of the semiconductor light emitting measure, the adhesion between the sealing material and the synthetic resin substrate (that is, the package for the semiconductor light emitting device) is improved, and delamination between the sealing material and the synthetic resin substrate is achieved. Has been reduced.

Japanese Patent No. 3772520 Japanese Patent No. 3682230

  In packages for semiconductor light emitting devices as disclosed in Patent Document 1 and Patent Document 2, a resin that is integrally molded while covering a lead frame has a high strength, and a relatively hard resin is used.

  However, a package for a semiconductor light-emitting device using a relatively hard resin is harder than a package for a semiconductor light-emitting device using a relatively soft resin, but it is fragile and chipped or partially damaged. Interfacial peeling is likely to occur due to differences in the linear expansion coefficient. Accordingly, the semiconductor light emitting device package is chipped when the semiconductor light emitting device package is transported in the process of mounting the semiconductor light emitting device, and the semiconductor light emitting device has no problem, but the semiconductor light emitting device is defective due to the chipping. There is a problem that becomes. Here, it is conceivable to form a semiconductor package using a relatively soft resin, but if a soft resin is used for a package for a semiconductor light emitting device having a structure as disclosed in Patent Document 1 and Patent Document 2, a semiconductor is formed. The strength of the light emitting device package itself is reduced, the resin molded body is deformed, and when the semiconductor light emitting device is used, distortion of the lead frame, the entire package of the semiconductor light emitting device, etc. occurs, and the reliability of the semiconductor light emitting device Will be reduced.

  Further, in the package for a semiconductor light emitting device as disclosed in Patent Document 1 and Patent Document 2, heat generated by the semiconductor light emitting element is transmitted only through a lead frame extending from the mounting portion of the semiconductor light emitting element toward the side surface of the package. Therefore, heat generated from the semiconductor light emitting element cannot be efficiently radiated to the outside of the semiconductor light emitting device.

  The present invention has been made in view of such problems, and the object of the present invention is to provide a semiconductor light emitting device package having high strength and high heat dissipation while preventing occurrence of breakage such as chipping, And the semiconductor light-emitting device using the same will be provided.

  In order to achieve the above object, a package for a semiconductor light emitting device according to the present invention includes a first lead frame, a second lead frame, the first lead frame, and the second lead frame partially covered with the first lead frame. A package for a semiconductor light emitting device, comprising a lead frame and a resin molded body molded integrally with the second lead frame, and mounted on a mounting substrate via the first lead frame and the second lead frame. The resin molded body includes a recess for mounting a semiconductor light emitting element on the first surface, the resin molded body contains polyorganosiloxane, and the bifunctional silicon content of the resin molded body is 5% by weight. The first lead frame is positioned outside the resin molded body and the first exposed lead portion exposed on the bottom surface of the recess. A first external lead portion; a first connecting lead portion connecting the one end of the first exposed lead portion and the first external lead portion; and a first facing the first surface from the other end of the first exposed lead portion. A first extended lead portion extending toward the second surface and exposed from the second surface, wherein the second lead frame is exposed from the bottom surface of the concave portion, and the resin molded body. A second external lead portion positioned outside the second exposed lead portion, and a second connecting lead portion connecting the one end of the second exposed lead portion and the second external lead portion, the first external lead portion, the first external lead portion, Each of the two external lead portions and the first extending lead portion is arranged at a position where at least a part thereof abuts against the surface of the mounting substrate during the mounting.

  In the semiconductor light emitting device package described above, the resin molded body has a primary particle aspect ratio of 1.2 or more and 4.0 or less, and a primary particle diameter of 0.1 μm or more and 2.0 μm or less. And a curing catalyst.

  In the semiconductor light emitting device package described above, the first external lead portion and the second external lead portion are exposed from the second surface and extend toward the outside of the resin molding and along the second surface. May be.

  In the semiconductor light emitting device package described above, the exposed portions of the first external lead portion, the second external lead portion, and the first extending lead portion may be provided on the same plane as the second surface. Good.

  In the semiconductor light emitting device package described above, the second lead frame extends from the other end of the second exposed lead portion toward the second surface facing the first surface and is exposed from the second surface. An extended lead portion may be provided.

  In the semiconductor light emitting device package described above, the first lead frame has the first connecting lead portion branched, and the first exposed lead portion is independently connected to each branch destination of the first connecting lead portion. The first extended lead portion may be connected to at least one of the independent first exposed lead portions.

  In the semiconductor light emitting device package described above, in the second lead frame, the second connection lead portion is branched, and the second exposed lead portion is independently connected to each branch destination of the second connection lead portion. The second extending lead portion may be connected to at least one of the independent second exposed lead portions.

  In the semiconductor light emitting device package described above, when the first lead frame and the second lead frame are projected onto the second surface, the first lead frame and the second lead frame are engaged with each other while being separated from each other. It may be.

  In the semiconductor light emitting device package described above, each of the first lead frame and the second lead frame is formed by bending one lead frame, and the resin molded body maintains one of the bent shapes while maintaining the bent shape. The part may be covered.

  In the semiconductor light emitting device package described above, the resin molded body may be molded by liquid injection molding.

  In order to achieve the above object, a semiconductor light emitting device of the present invention uses the above-described package for a semiconductor light emitting device.

  In the semiconductor light emitting device package of the present invention, the first lead frame includes the first extension lead portion, and each of the first external lead portion, the second external lead portion, and the first extension lead portion is mounted. Sometimes, at least a part of the mounting substrate is in contact with the surface of the mounting substrate, so that the first lead frame can be reinforced even if a resin molded body having relatively flexibility is used. Thus, it is possible to obtain a package for a semiconductor light-emitting device having appropriate heat dissipation while preventing chipping and breakage as in the prior art.

  In the semiconductor light emitting device package of the present invention, the heat from the mounted semiconductor light emitting element is dissipated not only from the first external lead part but also from the first extending lead part, so that the temperature of the semiconductor light emitting element is increased. Is kept low. That is, the semiconductor light emitting device package of the present invention has excellent heat dissipation.

  Further, in the semiconductor light emitting device package described above, since the first extended lead portion is provided in the first exposed lead portion to which wire bonding is connected, the rigidity of the first lead frame itself is increased, so that sufficient heat is generated. Thus, the bonding wire can be surely welded to the first exposed lead.

  Further, in the semiconductor light emitting device package described above, when the second extended lead portion is provided in the second exposed lead portion to which wire bonding is connected, the rigidity of the second lead frame itself is increased, so that sufficient heat is generated. Thus, the bonding wire can be surely welded to the second exposed lead.

  In the semiconductor light emitting package described above, when the first lead frame and the second lead frame are projected onto the second surface of the resin molded body, the first lead frame and the second lead frame are engaged with each other while being separated from each other. In this case, the mechanical strength of the semiconductor light emitting device package can be further improved.

  The semiconductor light-emitting device of the present invention has high heat dissipation and high durability because the semiconductor light-emitting element is mounted on the semiconductor light-emitting device package described above.

  Further, in the semiconductor light emitting device of the present invention, the heat from the semiconductor light emitting element is dissipated not only from the external lead part but also from the extended lead part, so that the temperature of the semiconductor light emitting element can be kept low and the heat storage over time. Therefore, deterioration can be prevented and reliability can be improved, and luminance characteristics of the semiconductor light emitting device can be improved.

1 is a perspective view schematically illustrating a semiconductor light emitting device according to a first embodiment. (A) is a plan view of the semiconductor light emitting device of FIG. 1, (b) is a back view of the semiconductor light emitting device of FIG. 1, and (c) is a sectional view taken along line II-II of FIG. . It is sectional drawing of the semiconductor light-emitting device which has the lead frame of the form different from 1st Embodiment. (A) is a top view of the semiconductor light-emitting device concerning 2nd Embodiment, (b) is sectional drawing along line IV (b) -IV (b) of Fig.4 (a), (c) FIG. 4 is a cross-sectional view taken along line IV (c) -IV (c) in FIG. 4A, and FIG. 4D is a plan view of the lead frame when the semiconductor light emitting device according to the second embodiment is viewed from above. It is. It is a top view of the semiconductor light-emitting device concerning a 3rd embodiment. (A) is a sectional view taken along line VI (a) -VI (a) in FIG. 5, and (b) is a sectional view taken along line VI (b) -VI (b) in FIG. (C) is a top view of the lead frame when the semiconductor light emitting device according to the third embodiment is viewed from above. (A) is a top view of the 4th comparative example as a conventional semiconductor light-emitting device, (b) is a sectional view which met line VII-VII of Drawing 7 (a). It is a graph which shows the viscosity characteristic of the material used for the resin molding of the package for semiconductor light-emitting devices concerning this invention. It is a graph which shows the time-dependent change of the radiant flux of the semiconductor light-emitting device which concerns on this invention, and the conventional semiconductor light-emitting device.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail based on some embodiments with reference to the drawings. In addition, this invention is not limited to the content demonstrated below, In the range which does not change the summary, it can change arbitrarily and can implement. The drawings used for describing each embodiment schematically show a semiconductor light emitting device according to the present invention, and are partially emphasized, enlarged, reduced, or omitted to deepen understanding. In some cases, it does not accurately represent the scale or shape of each component. Furthermore, all the various numerical values used in each embodiment show an example, and can be changed variously as necessary.

<First Embodiment>
(Structure of semiconductor light emitting device)
FIG. 1 is a perspective view schematically showing a semiconductor light emitting device 1 according to the present embodiment, FIG. 2A is a plan view of the semiconductor light emitting device 1 of FIG. 1, and FIG. 2 is a rear view of the semiconductor light emitting device 1, and FIG. 2C is a cross-sectional view taken along line II-II in FIG. 1 and 2, the width direction of the semiconductor light emitting device 1 is defined as the X direction, the longitudinal direction is defined as the Y direction, and the height direction is defined as the Z direction.

  As shown in FIGS. 1 and 2A to 2C, the semiconductor light emitting device 1 includes a resin molded body 2, a first lead frame 3a, a second lead frame 3b, a sealing material 4, a semiconductor light emitting element 5, A bonding wire 6 is provided. More specifically, the semiconductor light emitting device 1 is an element mounting portion of a package 7 for a semiconductor light emitting device obtained by integrally molding a resin molded body 2, a first lead frame 3a, and a second lead frame 3b. A semiconductor light emitting element 5 is mounted in the recess 8, and external electrodes (not shown) of the semiconductor light emitting element 5 are connected to the first lead frame 3 a and the second lead frame 3 b through bonding wires 6. Yes. Further, a sealing material 4 is provided so as to cover the periphery of the semiconductor light emitting element 5 mounted on the semiconductor light emitting device package 7 and to fill the recess 8. Hereinafter, when the first lead frame and the second lead frame are not distinguished from each other or when both are described, they are also simply referred to as lead frames.

  As shown in FIG. 1 and FIGS. 2A and 2C, the resin molded body 2 has a square or rectangular shape on the XY plane, and the resin molded body 2 has a recess 8 on the first surface 2 a side. Is formed. The first lead frame 3 a and the second lead frame 3 b are exposed on the bottom surface of the recess 8. Further, the side surface of the recess 8 is not perpendicular to the bottom surface of the recess 8 but is inclined from the vertical direction (Z-axis direction). That is, the concave portion 8 has a quadrangular frustum shape in which the opening area gradually increases from the bottom surface upward. With such a shape, a part of the light emitted from the semiconductor light emitting element 5 can be reflected on the side surface of the recess 8 and efficiently led out of the semiconductor light emitting device 1. The shape of the recess 8 is not limited to the shape described above, and may be a quadrangular prism shape, a cylindrical shape, or a truncated cone shape.

  In FIG. 1 and FIG. 2, an example in which the side surface (that is, the outer side surface) excluding the concave portion 8 of the resin molded body 2 is perpendicular to the bottom surface is shown, but this angle is not limited to be vertical, It may have an inclination. That is, the upper edge end portion of the resin molded body 2 may gradually become thinner. In the case of such a shape, there is an advantage that the mold can be easily released from the mold at the time of molding, and the productivity is improved. For the same reason, the upper edge portion and the side surface portion of the resin molded body 2 may not be a structure having a ridge corner portion but may be a round continuous surface.

  Although not shown in the drawings, the resin molded body 2 extends from the second surface 2b of the resin molded body 2 toward the first surface 2a and is exposed from the recessed portion 8, and is exposed to the first lead frame 3a (11a) or the second lead frame 3b (11b). ) May reach the back surface. The opening may be cylindrical or may be a quadrangular prism. The opening is provided when the first lead frame 3a (11a) and the second lead frame 3b (11b) are integrally formed with the resin molded body 2, and each lead frame is held when the shape of each lead frame is maintained. Suppressing the occurrence of resin fog in the first lead frame 3a (11a) or the second lead frame 3b (11b), which is a trace of the support pins used to support the frame and exposed in the recess 8 of the resin molded body 2 There is an effect to.

  As shown in FIG. 2C, the first lead frame 3a is formed by being entirely bent, and is exposed from the bottom surface of the concave portion 8 of the resin molded body 2, and the first exposed lead portion 11a and the resin A first connection lead for connecting the first external lead portion 12a and one end of the first exposed lead portion 11a (that is, the end portion on the −Y axis direction side) and the first external lead portion 12a located outside the molded body 2. It extends from the other end of the portion 13a and the first exposed lead portion 11a (that is, the end portion on the + Y-axis direction side) toward the second surface 2b of the resin molded body 2 and its lower surface is exposed from the second surface 2b. The first extending lead portion 14a extends along the second surface 2b. Therefore, the first lead frame 3a has a convex bent structure in which a part projects in the + Z direction.

  More specifically, the first exposed lead portion 11 a is formed flat so that the upper surface thereof is exposed from the bottom surface of the recess 8. The semiconductor light emitting element 5 is mounted on the first exposed lead portion 11a. The bonding wire 6 is connected to the surface of the first exposed lead portion 11 a, and the first exposed lead portion 11 a and one of the external electrodes of the semiconductor light emitting element 5 are electrically connected by the bonding wire 6.

  The first external lead portion 12a is formed flat along the second surface 2b of the resin molded body 2 with its lower surface exposed to the second surface 2b. Here, the first external lead portion 12 a includes a portion exposed on the second surface 2 b of the resin molded body 2. Although not shown, a columnar through-hole that functions as a mold lock may be provided at a position where the first external lead portion 12a or the first connecting lead portion 13a is in contact with the resin molded body 2 as necessary. Thereby, the adhesiveness between the resin molded body 2 and the first lead frame 3a is improved, and the flow of the resin as the raw material of the resin molded body 2 when the resin molded body 2 and the first lead frame 3a are integrally formed is improved. . The shape of the through hole is not limited to a cylindrical shape, that is, the shape on the XY plane is not limited to a circle, and the shape on the XY plane can be various shapes such as a rectangle and an ellipse. May be. Further, a plurality of through holes may be provided in the first external lead portion 12a.

  The first connecting lead portion 13a connects the first external lead portion 12a and the first exposed lead portion 11a located above (that is, the + Z-axis direction side) above the first external lead portion 12a. 1 Extends obliquely upward from one end of the external lead portion 12a. Depending on the positional relationship between the first external lead portion 12a and the first exposed lead portion 11a, the first connecting lead portion 13a may extend along the Z-axis direction. By shortening the first connecting lead portion 13a, the thermal resistance of the semiconductor light emitting device package 7 can be lowered.

  The 1st extension lead part 14a is extended so that the resin molding 2 may be penetrated from the edge part on the opposite side to the edge part of the 1st exposure lead part 11a connected to the 1st connection lead part 13a. Specifically, the first extending lead portion 14 a extends obliquely downward from the bottom surface of the concave portion 8 of the resin molded body 2 toward the second surface 2 b of the resin molded body 2. Further, the first extending lead portion 14a whose lower surface is exposed from the second surface 2b exposes its lower surface and extends along the second surface 2b. That is, the first extending lead portion 14a has a bent structure. Note that, depending on the positional relationship between the first exposed portion 11a and the portion extending along the second surface 2b of the first extending lead portion 14a, the first extending lead portion 14a extends along the Z-axis direction. It may be. Also in this case, the thermal resistance of the semiconductor light emitting device package 7 can be lowered by shortening the first extending lead portion 14a. Therefore, the first extending lead portion 14a may not be extended along the second surface 2b but may be exposed from the second surface 2b as long as the first extending lead portion 14a can be sufficiently thermally connected to the wiring board to be mounted.

  Further, as shown in FIG. 2C, the second lead frame 3b is formed by being bent as a whole, and is exposed from the bottom surface of the concave portion 8 of the resin molded body 2. Second connection part for connecting the second external lead part 12b to the second external lead part 12b positioned on the outside of the resin molded body 2 and one end of the second exposed lead part 11b (that is, the + Y axial direction side end). It is comprised from the lead part 13b. Therefore, the first lead frame 3a has a bent structure that is bent at two portions.

  More specifically, the second exposed lead portion 11b is formed flat so that the top surface is exposed from the bottom surface of the recess 8. The bonding wire 6 is connected to the surface of the second exposed lead portion 11b, and the second exposed lead portion 11b and one of the external electrodes of the semiconductor light emitting element 5 are electrically connected by the bonding wire 6.

  The second external lead portion 12b is formed flat along the second surface 2b of the resin molded body 2 with its lower surface exposed to the second surface 2b. Here, the second external lead portion 12 b includes a portion exposed on the second surface 2 b of the resin molded body 2. Although not shown, a columnar through-hole that functions as a mold lock may be provided as necessary at a position in contact with the resin molded body of the second external lead portion 12b. Thereby, the adhesiveness between the resin molded body 2 and the second lead frame 3b is improved, and the flow of the resin as the raw material of the resin molded body 2 when the resin molded body 2 and the second lead frame 3b are integrally formed is improved. . The shape of the through hole is not limited to a cylindrical shape, that is, the shape on the XY plane is not limited to a circle, and the shape on the XY plane is various shapes such as a rectangle and an ellipse. Also good. Further, a plurality of through holes may be provided in the second external lead portion 12b.

  The second connecting lead portion 13b connects the second external lead portion 12b and the second exposed lead portion 11b located above (that is, the + Z-axis direction side) above the second external lead portion 12b. 2 Extends obliquely upward from one end of the external lead portion 12b. Depending on the positional relationship between the second external lead portion 12b and the second exposed portion 11b, the second connection lead portion 13b may extend along the Z-axis direction. By shortening the second connecting lead portion 13b, the thermal resistance of the semiconductor light emitting device package 7 can be lowered.

  As described above, the lower surface of the first external lead portion 12a of the first lead frame 3a, the partial lower surface of the first extended lead portion 14a exposed from the second surface 2b of the resin molded body 2, and the second lead frame The lower surface of the second external lead portion 12b of 3b extends along the second surface 2b of the resin molded body 2 and is located on the same plane as the second surface 2b. Accordingly, the second surface 2b side of the resin molded body 2 is a flat surface, and the first extended lead exposed from the lower surface of the first external lead portion 12a of the first lead frame 3a and the second surface 2b of the resin molded body 2 is used. The lower surface of a part of the portion 14a and the lower surface of the second external lead portion 12b of the second lead frame 3b are positioned so as to be in contact with the surface of the mounting substrate on which the semiconductor light emitting device 1 is to be mounted. Has been placed. In addition, the 1st external lead part 12a of the 1st lead frame 3a, a part of 1st extension lead part 14a exposed from the 2nd surface 2b of the resin molding 2, and the 2nd external lead part of the 2nd lead frame 3b As long as 12b corresponds to the shape of the surface of the mounting substrate and can be brought into contact with the surface, it may not be located on the same plane as the second surface 2b of the resin molded body 2.

  In the present embodiment, the first external lead portion 12a and the second external lead portion 12b are defined as outer leads, and the first exposed lead portion 11a, the second exposed lead portion 11b, the first connecting lead portion 13a, The two connecting lead portions 13b and the first extending lead portion 14a may be defined as inner leads. However, the first extending lead portion 14a may be defined as an outer lead depending on the substrate on which the semiconductor light emitting device package is mounted.

  Hereinafter, when the first exposed lead portion and the second exposed lead portion are not distinguished from each other or when both are described, they are also simply referred to as an exposed lead portion. Similarly, when the first connection lead portion and the second connection lead portion are not distinguished from each other or when both are described, they are also simply referred to as a connection lead portion.

  As described above, the semiconductor light emitting element 5 is mounted on the first lead exposed portion 11a of the first lead frame 3a, and the first lead exposed portion 11a and the second lead of the first lead frame 3a via the bonding wires 6. The second lead exposed portion 11b of the frame 3b is electrically connected.

  In the present embodiment, the semiconductor light emitting element 5 is mounted on the first lead exposed portion 11a. However, in the present invention, the semiconductor light emitting element 5 may be mounted on the second lead exposed portion 11b. In such a case, it is preferable that the second extended lead portion having the same structure as the first extended lead portion 14a is also connected to the second lead exposed portion 11b. This is because the main heat dissipation path of the heat generated by the semiconductor light emitting element 5 is a lead portion to which the semiconductor light emitting element 5 is bonded, and the first lead exposed portion 11a or the second lead exposed on which the semiconductor light emitting element 5 is mounted. This is because the first extension lead part 14a or the second extension lead part corresponding to the part 11b is connected and exposed from the second surface to secure a heat dissipation path to the mounting substrate. In the following description, when the first extension lead portion and the second extension lead portion are not distinguished from each other or when both are described, they are also simply referred to as extension lead portions.

  The sealing material 4 is provided so as to cover the semiconductor light emitting element 5 and fill the concave portion 8 of the resin molded body 2.

  Hereinafter, each component of the semiconductor light emitting device 1 will be described in detail.

(Resin molding)
In the present invention, one of the characteristics is that the bifunctional silicon content in the resin molded body 2 is 5 wt% or more and 12 wt% or less. Here, the bifunctional silicon (hereinafter also referred to as D silicon) means silicon contained in a bifunctional silicon unit having two organic groups. Therefore, the resin molding 2 of the present invention necessarily contains a polydiorganosiloxane chain as the polyorganosiloxane.

  Since bifunctional silicon functions as a soft segment, when the resin molded body 2 contains a specific amount of bifunctional silicon, the resin molded body 2 has rubber elasticity, high heat resistance and light resistance as silicone. For this reason, the bifunctional silicon content is a numerical value having a correlation with the hardness of the resin molded body 2, and the bifunctional silicon content is an index of the hardness of the resin molded body 2. Further, if the resin molded body 2 is isotropic, even if the filler content and the degree of crosslinking of the silicone resin contained in the molded body are changed by each part of the resin molded body 2, the bifunctional silicon The content can be used as an index of hardness. Here, isotropic means that there is no orientation in the composition and structure of the resin molded body 2, and the composition, filler distribution state, cured state, etc. are the same even if any part of the resin molded body 2 is cut out. Say. When the bifunctional silicon content is within the above range, it means that the main component is a soft silicone resin as a resin. Since such a soft resin is not fragile, the resin molded body 2 itself is also compared. Softens and eliminates the risk of chipping and breakage. The bifunctional silicon content in the resin molded body 2 is usually 5% by weight or more, preferably 6% by weight or more, and usually 12% by weight or less, preferably 10% by weight or less. If the amount of bifunctional silicon is less than this range, the resin molded body 2 becomes hard and brittle, and chipping occurs during machine conveyance, or peeling from the sealing material 4, the first lead frame 3a, the second lead frame 3b, etc. due to thermal shock or the like. May occur. When bifunctional silicon is reduced by introducing an organic resin skeleton portion having no siloxane structure, coloring of the resin molded body 2 by light or heat may become remarkable. Moreover, when there is more bifunctional silicon than this range, there exists a possibility that the resin molding 2 may be too soft, and it may become easy to deform | transform and break. Further, when the bifunctional silicon is increased by increasing the molecular weight of the polydiorganosiloxane before curing, there is a possibility that the viscosity of the composition before curing becomes too high and liquid injection molding becomes impossible.

  As an example in which the bifunctional silicon content is increased, the polyorganosiloxane constituting the resin molded body 2 has a high molecular weight (one having about 5000 to 10,000 D units, which is a gum-like solid at room temperature) and In this case, polydimethylsiloxane containing about 0.03 to 0.3 mol% of a vinyl group in the side chain is used, and a white pigment described later is added, followed by heat curing with a peroxide catalyst. The bifunctional silicon content of the polyorganosiloxane in this case can be estimated by the bifunctional silicon content in the dimethylsiloxy group repeating structure, and is about 38% by weight.

  On the other hand, when a composition containing 35% by weight of this vinyl group-containing polydimethylsiloxane is produced, the bifunctional silicon content in the resin molded body 2 is calculated to be 13.3% by weight. As described above, when a polyorganosiloxane having a bifunctional silicon content larger than the above-described preferable range is used for the resin molded body 2, the viscosity of the package material before curing tends to be very high. Therefore, it becomes difficult to perform liquid injection molding because the fluidity of the material of the obtained resin molding is lowered. The bifunctional silicon content does not change either in the state of the material of the resin molded body before curing or in the state of the resin molded body after curing.

The resin molded body 2 is made of a liquid thermosetting silicone resin composition having a high reflectance with respect to visible light after curing. Specifically, the reflectance of the resin molded body 2 is preferably such that the reflectance of light at 460 nm is 80% or more for a molded body sample having a thickness of 0.4 mm. Further, the reflectance of light having a wavelength of 400 nm is preferably 60% or more, more preferably 80% or more, and still more preferably 90% or more for a molded sample having a thickness of 0.4 mm. Here, the molded body sample having a thickness of 0.4 mm can be obtained by curing the liquid thermosetting silicone resin composition as a raw material at 180 ° C. for 4 minutes under a pressure of 10 kg / cm ² , for example. it can. In addition, the reflectance of a resin molding can be controlled by the kind of resin, the kind of filler, the particle size of filler, content, etc.

  The reflectance can be measured using a colorimeter such as SPECTROTOPOMETER CM-2600d manufactured by Konica Minolta Co., Ltd., by forming a molded sample having a thickness of 0.4 mm. If only a compact shaped body such as a package is available, a sample with a thickness of 0.4 mm is prepared by polishing the package and the like, and a minute surface reflection such as Nippon Denshoku VSR400 is used as a reflectance measuring device. It can be measured by measuring the reflectance in an area of 0.05 mmφ or more using a rate meter.

  The thermosetting silicone resin composition that is the material of the resin molded body 2 contains polyorganosiloxane and a white pigment as main components, and optionally contains other components such as a curing catalyst. Examples of other components include a curing rate control agent or a fluidity modifier. In particular, a thermosetting composition comprising a polyorganosiloxane, a white pigment having a primary particle aspect ratio of 1.2 to 4.0 and a primary particle diameter of 0.1 to 2.0 μm, and a curing catalyst. A silicone resin composition is preferred.

[Thermosetting silicone resin composition]
The preferable composition of the thermosetting silicone resin composition used for the resin molding 2 of the present invention is as follows. The content of the polyorganosiloxane in the thermosetting silicone resin composition used in the present invention is not limited as long as it can be normally used as a material for a resin molded body for forming the resin molded body 2. 15 wt% or more and 50 wt% or less, preferably 20 wt% or more and 40 wt% or less, more preferably 25 wt% or more and 35 wt% or less. Further, the content of the white pigment in the thermosetting silicone resin composition used in the present invention is not limited as long as it can be normally used as a material for forming the resin molded body 2, but for example, 30 in the entire composition. % By weight or more and 85% by weight or less, preferably 40% by weight or more and 80% by weight or less, more preferably 45% by weight or more and 70% by weight or less.

The thermosetting silicone resin composition used in the present invention preferably has a viscosity of 10 Pa · s to 10,000 Pa · s at a shear rate of 100 s ⁻¹ at 25 ° C. The viscosity is more preferably 150 Pa · s or more and 1,000 Pa · s or less from the viewpoint of molding efficiency when molding the resin molded body 2.

  In particular, in liquid injection molding (LIM molding) using a liquid resin material, burrs due to the material seeping out from minute gaps in the mold are likely to occur, and usually a post-processing step for removing the burrs is necessary. . On the other hand, there is a problem that a short mold (unfilled) is likely to occur if the mold gap is reduced in order to suppress the occurrence of burrs, but the viscosity of the liquid thermosetting silicone resin composition is in the above range. In this case, such a problem can be solved, and the liquid injection molding of the resin molded body 2 can be easily and efficiently performed.

If the viscosity at a shear rate of 100 s ^-1 is greater than 10,000 Pa · s, the resin flow is poor and the filling of the mold becomes insufficient, or it takes time to supply the liquid resin composition when performing injection molding. Therefore, the molding efficiency tends to be lowered due to, for example, a longer molding cycle.

  If the viscosity is less than 10 Pa · s, the liquid resin composition leaks from the gap between the molds to generate burrs, or the injection pressure easily escapes into the gap between the molds, so that molding becomes difficult to stabilize. As a result, the molding efficiency tends to decrease. In particular, when the molded body is small, post-processing for removing burrs becomes difficult, so it is important for moldability to suppress the generation of burrs.

In addition, from the viewpoint of thixotropy, the thermosetting silicone resin composition used in the present invention has a viscosity ratio (1 s at a shear rate of 1 s ⁻¹ at 25 ° C. to a viscosity at a shear rate of 100 s ⁻¹ at 25 ° C. preferably ^-1 / 100s ^-1) it is 15 or more, and particularly preferably 30 or more. On the other hand, the upper limit is more preferably 300 or less.

  In order to make a material with good moldability, it is necessary to provide the material with a certain level of thixotropy. However, by satisfying the above conditions, there are few burrs and short molds (unfilled). The material measurement time and molding cycle during molding can be shortened, the molding is easy to stabilize, and the material has high molding efficiency.

When the ratio of the viscosity at a shear rate of 1 s ⁻¹ at 25 ° C. to the viscosity at a shear rate of 100 s ⁻¹ at 25 ° C. is less than 15, that is, when the viscosity at the shear rate of 1 s ⁻¹ is relatively small, molding is performed. Molding is easy because the material can easily enter the gaps between the machine and the mold, causing burrs, dripping easily at the nozzle part, and the injection pressure is not easily transmitted to the material, making molding difficult to stabilize. Can be difficult to control. In liquid injection molding, resin leakage in the sprue parting line tends to be a problem, but adjusting to the above viscosity range is effective in suppressing resin leakage.

The viscosity at a shear rate of 100 s ⁻¹ and the viscosity at a shear rate of 1 s ⁻¹ at 25 ° C. are measured using, for example, an ARES-G2-strain-controlled rheometer (manufactured by TA Instruments Japan Co., Ltd.). Can be measured.

[Polyorganosiloxane]
The polyorganosiloxane in the present invention refers to a polymer substance in which an organic group is added to a structure having a portion in which a silicon atom is bonded to another silicon atom through oxygen. Here, the polyorganosiloxane is preferably a liquid at normal temperature and pressure. This is because the material can be easily handled when the resin molded body 2 is molded. Polyorganosiloxane that is solid under normal temperature and normal pressure generally has a relatively high hardness as a cured product, but has low energy required for destruction and low toughness, light resistance and heat resistance are insufficient, This is because many products tend to discolor due to heat.

The polyorganosiloxane usually refers to an organic polymer having a siloxane bond as the main chain, and examples thereof include compounds represented by the following general composition formula (1) and mixtures thereof.
(R ¹ R ² R ³ SiO _1/2 ) _M (R ⁴ R ⁵ SiO _2/2 ) _D (R ⁶ SiO _3/2 ) _T (SiO _4/2 ) _Q (1)

Here, in the above formula (1), R ¹ to R ⁶ are independently selected from an organic functional group, a hydroxyl group, and a hydrogen atom. M, D, T, and Q are 0 or more and less than 1, and M + D + T + Q = 1.

  The organic functional group may be arbitrarily selected from known monovalent organic groups as long as it does not impair the durability / curing characteristics and reflection characteristics of the obtained resin molded body 2 with respect to light and heat. 10 alkyl groups, aromatic groups, alkenyl groups, and alkoxy groups having 1 to 3 carbon atoms are preferable because the resin molded body is not easily colored by heat. Among them, methyl groups, phenyl groups, and vinyl groups are industrially easily available. In view of the fact that the bifunctional silicon content of the polyorganosiloxane and the resin molded body can be increased, and a flexible resin molded body 2 can be provided, it is particularly preferable to use a methyl group as a main component. preferable.

The unit constituting the main polyorganosiloxane is monofunctional [R ₃ SiO _0.5 ] (triorganosyl hemioxane), bifunctional [R ₂ SiO] (diorganosiloxane), trifunctional [RSiO _1.5 ] (Organosilsesquioxane), tetrafunctional [SiO ₂ ] (silicate), and by changing the composition ratio of these four types of units, the difference in the properties of polyorganosiloxane appears, so the desired properties May be selected as appropriate so that is obtained. In the present invention, the resin molded body 2 must contain a predetermined amount of bifunctional silicon. In other words, it is essential to use a polyorganosiloxane having many bifunctional units as a resin for the resin molded body 2. Become.

  Polyorganosiloxane can be cured by applying heat energy, light energy, or the like in the presence of a curing catalyst. Here, curing refers to changing from a state showing fluidity to a state showing no fluidity. For example, even if the object is left at an angle of 45 degrees from the horizontal for 30 minutes, it is fluid. The state is referred to as an uncured state, and a state having no fluidity can be determined as a cured state. Further, when the object does not exhibit fluidity due to a large filler filling amount, the object is not plastically deformed, and the hardness can be measured with a durometer type A, and the measured hardness value is at least 5 or more. Whether it is uncured or cured can also be determined.

  When the polyorganosiloxane is classified according to the curing mechanism, polyorganosiloxanes such as an addition polymerization curing type, a condensation polymerization curing type, an ultraviolet curing type, and a peroxide crosslinking type can be generally exemplified. Among these, addition polymerization curing type (addition type polyorganosiloxane) and condensation curing type (condensation type polyorganosiloxane) are preferable. Among these, a polyorganosiloxane type that has no by-products and cures by irreversible hydrosilylation (addition polymerization) is more preferable. This is because when a by-product is generated during the molding process, the pressure in the molded container tends to increase or it remains as foam in the cured material. In addition, polyorganosiloxane having many bifunctional silicon units generally has low activity and is difficult to cure at high speed in the condensation type curing mechanism, but addition type polyorganosiloxane has the advantage that it is very active and can be cured at high speed, resulting in high productivity. .

  Addition type polyorganosiloxane refers to a polyorganosiloxane chain crosslinked by an organic addition bond. As a typical example, the molar ratio of the total hydrosilyl group amount to the total alkenyl group amount of a silicon-containing compound having an alkenyl group such as vinylsilane and a silicon compound containing a hydrosilyl group such as hydrosilane is 0.5 times. Examples thereof include compounds having Si—C—C—Si bonds at the cross-linking points obtained by mixing in an amount ratio of 2.0 times or less and reacting in the presence of an addition condensation catalyst such as a Pt catalyst. .

  Examples of the condensed polyorganosiloxane include a compound having a Si—O—Si bond obtained by hydrolysis and polycondensation of an alkylalkoxysilane at a crosslinking point.

[White pigment]
The white pigment used in the present invention preferably has a primary particle aspect ratio of 1.2 or more and 4.0 or less, and a primary particle diameter of 0.1 μm or more and 2.0 μm or less, and is a known white pigment that does not inhibit the curing of the resin. A pigment can be appropriately selected. As the white pigment, at least one of an inorganic material and an organic material can be used. Here, white means colorless and not transparent. That is, it means a color that can diffusely reflect incident light by a substance that does not have a specific absorption wavelength in the visible light region.

  Examples of the inorganic particles that can be used as the white pigment include alumina (hereinafter sometimes referred to as “aluminum oxide”), silicon oxide, titania (hereinafter sometimes referred to as “titanium oxide”), zinc oxide, Metal oxides such as magnesium oxide and zirconium oxide; metal salts such as calcium carbonate, barium carbonate, magnesium carbonate and barium sulfate; boron nitride, alumina white, colloidal silica, aluminum silicate, zirconium silicate, aluminum borate, clay, Examples include talc, kaolin, mica, and synthetic mica.

  Among these, alumina, titania, zinc oxide, zirconium oxide, and the like are preferable from the viewpoint of high whiteness and high light reflection effect and hardly change in quality, and alumina and titania are particularly preferable. Also, alumina, boron nitride, and the like are particularly preferable from the viewpoint of improving the thermal conductivity when the material is cured. Alumina is particularly preferable from the viewpoint of high near-ultraviolet light reflection effect and small alteration due to near-ultraviolet light. Titania can be contained to such an extent that problems such as photocatalytic properties, dispersibility, and whiteness do not occur. These white pigments can be used alone or in admixture of two or more.

  The greater the difference between the refractive index of the polyorganosiloxane and the refractive index of the white pigment, the higher the whiteness even with the addition of a small amount of white pigment, and to obtain a resin molded product for semiconductor light-emitting devices with good reflection and scattering efficiency Can do. The polyorganosiloxane preferably has a refractive index of about 1.41, and alumina particles having a refractive index of 1.76 can be suitably used as the white pigment.

  Alumina has a low ability to absorb ultraviolet rays, and therefore can be suitably used particularly when used with a light emitting element emitting ultraviolet to near ultraviolet light. The alumina used in the present invention is not limited in crystal form, but α-alumina having characteristics such as chemically stable, high melting point, high mechanical strength, high hardness, and high electric insulation resistance is preferable. Can be used.

  When alumina is used as the white pigment of the present invention, the crystallite size of the alumina crystal is preferably 50 nm to 200 nm, more preferably 70 nm to 150 nm, and particularly preferably 90 nm to 130 nm. preferable. A crystallite is the largest group that can be regarded as a single crystal.

  When the crystallite size of the alumina crystal is within the above range, it is preferable in that the pipe, screw, mold, and the like during the molding are less worn and impurities due to the wear are less likely to be mixed. The crystallite size can be confirmed by X-ray diffraction measurement.

  In general, alumina has higher durability than titania, and when alumina and titania are used in combination, the durability of the material tends to decrease as the ratio of titania increases. On the other hand, titania has a higher refractive index than alumina and a large difference in refractive index from resin, so that the reflectance of the wall tends to increase as the titania ratio increases.

  Therefore, when titania having the same or lower degree is added to alumina, the reflectance is improved more than expected from the titania ratio, and the decrease in durability can be suppressed as much as possible while increasing the reflectance of the material.

  The thermal conductivity during curing of the thermosetting silicone resin composition is preferably higher from the viewpoint of molding efficiency and heat dissipation of the semiconductor light emitting device, but in order to increase the thermal conductivity, the purity is 98% or more. It is preferable to use alumina, more preferably alumina having a purity of 99% or more, and particularly preferably low soda alumina. In order to increase the thermal conductivity, it is also preferable to use boron nitride, and it is particularly preferable to use boron nitride having a purity of 99% or more.

  In particular, in a semiconductor light emitting device using a light emitting element having an emission peak wavelength of 420 nm or more, titania can also be suitably used as a white pigment. Although titania has an ultraviolet absorbing ability, it has a high refractive index and a strong light scattering property. Therefore, it has a high reflectance of light having a wavelength of 420 nm or more, and it is easy to exhibit high reflection even with a small addition amount. When titania is used as the white pigment of the present invention, a rutile type that is stable at high temperature, has a high refractive index, and has a relatively high light resistance is more stable than an anatase type that has a large ultraviolet absorbing ability and photocatalytic ability and is unstable at high temperature. A rutile type in which a surface is coated with a thin film of silica or alumina for the purpose of suppressing photocatalytic activity is particularly preferable.

  Since titania has a high refractive index and a large difference in refractive index with polyorganosiloxane, it is easy to be highly reflective even with a small addition amount. Therefore, alumina and titania are used in a ratio of 50:50 to 95: 5 (weight ratio). May be.

  The white pigment used in the present invention preferably has an aspect ratio of primary particles of 1.2 or more and 4.0 or less. The aspect ratio is generally used as a simple method for quantitatively expressing the shape of a particle. In the present invention, the major axis length (maximum major axis) of a particle measured by observation with an electron microscope such as SEM is the minor axis length. It is obtained by dividing by the length (the length of the longest part perpendicular to the major axis). When the axial length varies, a plurality of points (for example, 10 points) can be measured with an SEM and calculated from the average value. Alternatively, the same calculation result can be obtained by measuring 30 points and 100 points.

  A preferred aspect ratio is 1.25 or more, more preferably 1.3 or more, and particularly preferably 1.4 or more. On the other hand, the upper limit is preferably 3.0 or less, more preferably 2.5 or less, still more preferably 2.2 or less, particularly preferably 2.0 or less, and most preferably 1.8 or less.

  When the aspect ratio is in the above range, high reflectance is likely to be exhibited by scattering, and the reflection of light having a short wavelength in the near ultraviolet region is particularly large. Thereby, in the semiconductor light-emitting device 1 using the resin molding 2, the light emission output can be improved.

  In addition, the use of a white pigment having an aspect ratio in the above range is preferable in terms of molding because, for example, the mold is less worn. When the aspect ratio is larger than the above range, the mold may be worn by contact with the pigment particles. Conversely, when using a white pigment with a small aspect ratio, the packing density of the pigment in the material may be reduced. Since the height can be increased, the frequency of contact between the mold and the pigment increases, and the mold tends to wear. Furthermore, when white pigments with an aspect ratio in the above range are used, the material viscosity can be easily adjusted and adjusted to a viscosity suitable for molding, so that the molding cycle can be shortened and burrs can be prevented. An excellent material.

  When the aspect ratio is in the above range, the white pigment is filled in the gaps of the mold and burrs are less likely to occur, but when the aspect ratio is nearly spherical, such as less than 1.2, the burrs pass through the gaps of the mold. Is likely to occur.

  In the present invention, it is preferable that the particles having an aspect ratio in the above range occupy 60% by volume or more, more preferably 70% by volume or more, particularly preferably 80% by volume or more of the entire white pigment, and not all white pigments are necessarily included. It should be understood by those skilled in the art that the above aspect ratio range is not necessarily satisfied.

  In order to set the aspect ratio within the above range, a general method such as surface treatment or polishing of the white pigment may be employed. It can also be adjusted by crushing (pulverizing) the white pigment to make it fine, or by classifying it with sieve powder or the like.

  The white pigment used in the present invention preferably has a crushed shape, including a rounded shape with few crystal corners by treatment after crushing, and a non-spherical pigment shape produced by firing or the like. It is.

  Moreover, the primary particle diameter of the white pigment is preferably 0.1 μm or more and 2 μm or less. The lower limit is preferably 0.15 μm or more, more preferably 0.2 μm or more, particularly preferably 0.25 μm or more, and the upper limit is preferably 1 μm or less, more preferably 0.8 μm or less, particularly preferably 0. .5 μm or less.

  When the primary particle size is in the above range, the material is easy to express high reflectivity by combining the backscattering tendency and the scattered light intensity, and the reflection with respect to light having a short wavelength particularly in the near ultraviolet region is increased, which is preferable. . Moreover, since it becomes a high reflectance with addition of a small amount, the bifunctional silicon concentration of the resin molding 2 can be increased, and the desired relatively soft resin molding 2 can be obtained.

  If the primary particle diameter is too small, the white pigment tends to have low reflectance because the scattered light intensity is low.If the primary particle diameter is too large, the scattered light intensity tends to increase, but the reflectance tends to be forward scattering. It tends to be smaller.

  Further, when the primary particle diameter is in the above range, it is preferable from the viewpoint of moldability, such as easy adjustment to a viscosity suitable for molding and less wear of the mold. When the primary particle diameter is larger than the above range, the impact on the mold due to contact with the pigment particles tends to be large and the wear of the mold tends to be severe, and when using a white pigment whose primary particle diameter is smaller than the above range However, since the material tends to be highly viscous and the filling amount of the white pigment cannot be increased, it tends to be difficult to achieve compatibility between material properties such as high reflection and moldability.

  In particular, in order to obtain a material that can be suitably used for liquid injection molding, it is necessary that the material has a thixotropic property of a certain level or more. Adding a white pigment with a primary particle size of 0.1 μm or more and 2.0 μm or less to the composition has a large thixotropy-imparting effect and makes it easy to mold with few burrs and shorts, so viscosity and thixotropy are easy. Can be adjusted.

  A white pigment having a primary particle diameter larger than 2 μm can be used in combination for the purpose of increasing the filling rate of the white pigment in the resin composition.

  The primary particle in the present invention refers to the smallest unit that can be clearly distinguished from other particles constituting the powder, and the primary particle diameter can be measured by observation with an electron microscope such as SEM. On the other hand, agglomerated particles formed by agglomeration of primary particles are called secondary particles. The center particle size of secondary particles is determined by dispersing the powder in a suitable dispersion medium (for example, water in the case of alumina) and using a particle size analyzer. Can be measured. When the primary particle size varies, several points (for example, 10 points) are observed with an SEM, and the average value may be set as the particle size. In the measurement, when each particle is not spherical, the longest length, that is, the length of the major axis is taken as the particle diameter.

  On the other hand, the white pigment preferably has a secondary particle central particle size (hereinafter sometimes referred to as “secondary particle size”) of 0.2 μm or more, and 0.3 μm or more. More preferred. The upper limit is preferably 5 μm or less, more preferably 3 μm or less, and even more preferably 2 μm or less.

  When the secondary particle size is in the above range, the moldability of liquid injection molding becomes good, which is preferable. In addition, it is easy to adjust to a viscosity suitable for molding, and there is little wear on the mold. In addition, since the white pigment does not easily pass through the gap between the molds, burrs are not easily generated, and the mold gate is not easily clogged, so that troubles during molding hardly occur. When the secondary particle size is larger than the above range, the material tends to become non-uniform due to the precipitation of the white pigment, the moldability is impaired due to mold wear and gate clogging, and the reflection of the molded product is Uniformity may be impaired.

In addition, for the purpose of increasing the filling rate of the white pigment in the resin composition, a white pigment having a secondary particle size larger than 10 μm can be used in combination. The central particle diameter means a particle diameter at which the volume integrated value of the volume-based particle size distribution curve becomes 50%, and generally refers to what is called 50% particle diameter (D ₅₀ ) and median diameter.

  In the present invention, the content of the white pigment in the material of the resin molded body 2 is appropriately selected depending on the particle diameter and type of the pigment to be used and the difference in refractive index between the polyorganosiloxane and the pigment, and is not particularly limited. For example, the content in the composition is usually 30% by weight or more, preferably 45% by weight or more, and usually 85% by weight or less, preferably 70% by weight or less.

  When it is within the above range, reflectivity, moldability and the like are good. If it is less than the above lower limit, light tends to be transmitted and the reflection efficiency of the semiconductor light emitting device tends to decrease, and if it is larger than the upper limit, the fluidity of the material tends to deteriorate and the moldability tends to decrease. is there.

  Further, in order to increase the thermal conductivity of the thermosetting silicone resin composition, for example, in the range of 0.4 to 3.0, at least one of alumina and titania is used as a white pigment. It is preferable to add 40 to 90 parts by weight with respect to the total amount.

  Furthermore, it is preferable to add boron nitride as a white pigment in an amount of 30 parts by weight or more and 90 parts by weight or less with respect to the total amount of the resin molding material. Alumina, titania, and boron nitride may be used in combination.

[Curing catalyst]
The curing catalyst in the present invention is a catalyst for curing polyorganosiloxane. This catalyst includes an addition polymerization catalyst and a condensation polymerization catalyst depending on the curing mechanism of the polyorganosiloxane.

  The catalyst for addition polymerization is a catalyst for promoting the addition reaction between the alkenyl group and the hydrosilyl group in the polyorganosiloxane component. Examples of this addition polymerization catalyst include platinum black, secondary platinum chloride, platinum chloride. Examples include acids, reaction products of chloroplatinic acid and monohydric alcohol, complexes of chloroplatinic acid and olefins, platinum-based catalysts such as platinum bisacetoacetate, platinum-based catalysts such as palladium-based catalysts and rhodium-based catalysts. . The amount of addition polymerization catalyst is usually 1 ppm or more, preferably 2 ppm or more, and usually 100 ppm or less, preferably 50 ppm or less, more preferably 20 ppm, based on the weight of the polyorganosiloxane component as a platinum group metal. It is as follows.

  As a catalyst for condensation polymerization, acids such as hydrochloric acid, nitric acid, sulfuric acid, organic acids, alkalis such as ammonia and amines, organic boron compounds such as boron alkoxides, metal chelate compounds, and the like can be used. A metal chelate compound containing any one or more of Ti, Ta, Zr, Al, Hf, Zn, Sn, Ga, and Pt can be used. Among them, the metal chelate compound preferably contains one or more of Ti, Al, Zn, Zr, and Ga, and more preferably contains Zr.

  The blending amount of the catalyst for condensation polymerization is usually 0.01% by weight or more, preferably 0.05% by weight or more, while the upper limit is usually 10% by weight or less, preferably 6% by weight based on the total weight of the polyorganosiloxane components. % Or less.

  When the addition amount of the catalyst is within the above range, the curability and storage stability of the resin molded body material for a semiconductor light emitting device are good, and the quality of the molded resin molded body is also good. If the added amount exceeds the upper limit value, there may be a problem in the storage stability of the resin molded body material. If it is less than the lower limit value, the curing time becomes longer and the productivity of the resin molded body decreases. There is a tendency for quality to decline.

  These catalysts are selected in consideration of the stability of the resin composition for a semiconductor light emitting device, the hardness of the coating, non-yellowing, curability and the like.

[Other ingredients]
It is preferable that the material for a resin molded body for a semiconductor light emitting device of the present invention further contains a curing rate control agent. Here, the curing rate control agent is for controlling the curing rate in order to improve the molding efficiency when molding the resin molding material, and includes a curing retarder or a curing accelerator.

  The curing retarder is an important component particularly in liquid injection molding of an addition polymerization type polyorganosiloxane composition having a high curing rate.

  Examples of the curing retarder in the addition polymerization reaction include compounds containing an aliphatic unsaturated bond, organic phosphorus compounds, organic sulfur compounds, nitrogen-containing compounds, tin compounds, organic peroxides, and the like. It doesn't matter.

  Examples of the compound containing an aliphatic unsaturated bond include 3-hydroxy-3-methyl-1-butyne, 3-hydroxy-3-phenyl-1-butyne, and 3- (trimethylsilyloxy) -3-methyl-1-butyne. And propargyl alcohols such as 1-ethynyl-1-cyclohexanol, ene-yne compounds, and maleic acid esters such as dimethyl malate.

  Examples of the curing retarder in the condensation polymerization reaction include compounds having a reaction with hydrogen or a hydrogen bond, such as lower alcohols having 1 to 5 carbon atoms, amines having a molecular weight of 500 or less, organic compounds containing nitrogen or sulfur, and epoxy group-containing compounds. .

  The resin molded body 2 can be easily molded by selecting the type and blending amount of the curing rate control agent according to the purpose. For example, there is an advantage that the filling rate into the mold becomes high or there is no leakage from the mold when molding by injection molding, and burrs are hardly generated.

  The thermosetting silicone resin composition that is the material of the resin molded body 2 contains one or two or more other components in any ratio and combination as necessary unless the effects of the present invention are impaired. Can be made.

  For example, a fluidity adjusting agent can be contained for the purpose of controlling fluidity of the thermosetting silicone resin composition and suppressing sedimentation of white pigment.

  The fluidity modifier is not particularly limited as long as it is a solid particle from the normal temperature to the molding temperature where the viscosity of the thermosetting silicone resin composition is increased by addition, for example, silica fine particles, quartz beads, glass beads, etc. Examples thereof include inorganic particles, inorganic fibers such as glass fibers, boron nitride, and aluminum nitride.

  Further, in order to adjust the viscosity of the thermosetting silicone resin composition, a non-curable polyorganosiloxane can be partially blended with the polyorganosiloxane as a liquid thickener. The compounding amount of the polyorganosiloxane as a liquid thickener is usually 0 to 10 parts by weight, preferably 0.1 to 5 parts by weight, more preferably 0.5, when the whole polyorganosiloxane is 100 parts by weight. About 3 parts by weight can be used in place of polyorganosiloxane.

  In addition to the above components, the thermosetting silicone resin composition may contain inorganic fibers such as glass fibers for the purpose of increasing the strength and toughness after thermosetting, and has a thermal conductivity. In order to increase it, boron nitride, aluminum nitride, fibrous alumina or the like having high thermal conductivity can be contained separately from the aforementioned white pigment. In addition, for the purpose of lowering the linear expansion coefficient of the cured product, quartz beads, glass beads and the like can be contained.

  When the content of these is added is too small, the desired effect cannot be obtained, and when it is too large, the viscosity of the thermosetting silicone resin composition increases and affects the workability, so that a sufficient effect is exhibited. It can select suitably in the range which does not impair the workability of material. Usually, it is 500 parts by weight or less, preferably 200 parts by weight or less with respect to 100 parts by weight of the polyorganosiloxane.

  In addition, the thermosetting silicone resin composition includes an ion migration (electrochemical migration) inhibitor, an anti-aging agent, a radical inhibitor, an ultraviolet absorber, an adhesion improver, a flame retardant, a surfactant, Storage Stabilizer, Ozone Degradation Prevention Agent, Light Stabilizer, Thickener, Plasticizer, Coupling Agent, Antioxidant, Thermal Stabilizer, Conductivity Adder, Antistatic Agent, Radiation Blocker, Nucleating Agent, Phosphorus A system peroxide decomposer, a lubricant, a pigment, a metal deactivator, a physical property modifier, and the like can be contained within a range that does not impair the object and effect of the present invention.

[Composition ratio of composition]
The content of the polyorganosiloxane in the thermosetting silicone resin composition is usually 15% by weight or more and 50% by weight or less, preferably 20% by weight or more and 40% by weight or less of the entire resin composition, More preferably, it is 25 weight% or more and 35 weight% or less. In addition, when the hardening rate control agent contained in this resin composition and the liquid thickener which are other components are polyorganosiloxane, it shall be contained in content of the said polyorganosiloxane.

  The content of the white pigment in the thermosetting silicone resin composition is not limited as long as the resin composition can be used as a material for the resin molded body 2 as described above. 30 wt% or more and 85 wt% or less, preferably 40 wt% or more and 80 wt% or less, more preferably 45 wt% or more and 70 wt% or less.

  The content of the fluidity modifier in the thermosetting silicone resin composition is not limited as long as the effect of the present invention is not impaired, but is usually 55% by weight or less, preferably 2% by weight based on the entire resin composition. % To 50% by weight, more preferably 5% to 45% by weight.

(Lead frame)
The first lead frame 3a and the second lead frame 3b are made of the same material. Specifically, the first lead frame 3a and the second lead frame 3b are formed by performing silver plating on the entire surface of the copper lead wire. The first lead frame 3a and the second lead frame 3b are not limited to the materials described above, and may be made of other metal materials as long as they have electrical conductivity. And a part of each of the second lead frame 3b (the first exposed lead portion 11a and the second exposed lead portion 11b) is exposed on the bottom surface of the concave portion 8 of the resin molded body 2, so that the light from the semiconductor light emitting element 5 It is desirable to use a material having a high reflectance with respect to.

(Semiconductor light emitting device)
As the semiconductor light emitting device 5, a near ultraviolet semiconductor light emitting device that emits light having a wavelength in the near ultraviolet region, a purple semiconductor light emitting device that emits light in a purple region, a blue semiconductor light emitting device that emits light in a blue region, or the like is used. In general, these light-emitting elements emit light having a wavelength of 350 nm to 520 nm.

  Specifically, the semiconductor light emitting element 5 is formed by forming a semiconductor such as GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, and AlInGaN on the substrate as the light emitting layer. .

  Examples of the semiconductor structure include a homo structure having a MIS junction, a PIN junction, and a PN junction, a hetero structure, and a double hetero structure. Various emission wavelengths can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal. The light emitting layer may have a single quantum well structure or a multiple quantum well structure which is a thin film in which a quantum effect is generated.

  When considering use outdoors, it is preferable to use a gallium nitride compound semiconductor as a semiconductor material capable of forming the high-luminance semiconductor light-emitting element 5, and in red, a gallium-aluminum-arsenic-based semiconductor or aluminum-indium Although it is preferable to use a gallium / phosphorus based semiconductor, it can be used in various ways depending on the application.

  When a gallium nitride compound semiconductor is used, a material such as sapphire, spinel, SiC, Si, ZnO or GaN single crystal is used for the semiconductor substrate. In order to form gallium nitride with good crystallinity with high productivity, it is preferable to use a sapphire substrate.

  Gallium nitride-based compound semiconductors exhibit N-type conductivity without being doped with impurities. When forming a desired N-type gallium nitride semiconductor such as improving luminous efficiency, Si, Ge, Se, Te, C, etc. are preferably introduced as appropriate as N-type dopants.

  On the other hand, when a P-type gallium nitride semiconductor is formed, a P-type dopant such as Zn, Mg, Be, Ca, Sr, or Ba is doped. Since a gallium nitride based semiconductor is difficult to be converted into a P-type simply by doping with a P-type dopant, it is necessary to make it P-type by annealing it by heating in a furnace, low electron beam irradiation, plasma irradiation or the like after introducing the P-type dopant. The semiconductor wafer thus formed is partially etched to form positive and negative electrodes. Thereafter, the semiconductor light emitting device can be formed by cutting the semiconductor wafer into a desired size.

  For lighting applications, square light emitting diodes such as 290 μm square, 350 μm square, 500 μm square, and 1 mm square, and rectangular semiconductor light emitting elements such as 300 × 700 μm and 500 × 1000 μm can be suitably used. Since a rectangular package shape is frequently used in backlight applications, rectangular semiconductor light-emitting elements among the above-described illumination applications can be suitably used. In particular, it is particularly preferable to use a semiconductor light emitting device having a size of 500 × 1000 μm in accordance with a package having a large outer shape of 6 × 3 mm, which has a good balance between luminous efficiency and cost.

  A plurality of semiconductor light emitting elements 5 can be used as necessary, and the color rendering in white display can be improved by the combination thereof. In order to improve the luminous efficiency, a metal reflective film is provided directly under the light emitting layer by vapor deposition, etc., and the substrate such as sapphire is peeled and removed, and the rear surface metal reflection is replaced with a new support substrate such as Ge or Si. A semiconductor light emitting element with a layer can also be used.

(Encapsulant)
It is preferable to use a thermosetting resin composition as the resin composition for a sealing material constituting the sealing material 4. Thus, the thermosetting silicone resin composition of the resin molded body 2 forming the semiconductor light emitting device package 7 and the thermosetting resin composition for the sealing material constituting the sealing material 4 are each a thermosetting resin. Since it is common in some respects, the physical properties such as the chemical properties and the expansion coefficient are approximate, so that the adhesion is good, and peeling at the interface between the resin molded body 2 and the sealing material 4 can be prevented. it can.

  The thermosetting resin as the main component of the encapsulant 4 is excellent in transparency, light resistance, and heat resistance, and can seal the semiconductor light emitting device 1 without cracking or peeling even after long-term use. Resin is used.

  Examples of the thermosetting resin include an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, an acrylate resin, and a urethane resin, and one or more of them can be used. Among these, epoxy resins, modified epoxy resins, silicone resins, and modified silicone resins are preferable in terms of transparency and electrical insulation and chemically stable. Particularly, silicone resins and modified silicone resins are excellent in light resistance and heat resistance. Since it is the same kind of resin as the resin molding, it is excellent in adhesion and is preferably used.

  The sealing material 4 is preferably hard so as to protect the semiconductor light emitting element 5. Since the resin molded body 2 of the present invention contains a large amount of bifunctional silicon and is excellent in stress relaxation capability, it is difficult to cause peeling due to external stress or repeated lighting on the adhesive surface with the hard sealing material 4. On the other hand, especially when used in an environment where the thermal shock is intense, the sealing material 4 itself is liable to crack and peel off the electrode, so that a flexible material having a rubber elasticity of about Shore A 15-60 is preferably used as the sealing material 4. I can do it. The sealing material 4 can be mixed with at least one selected from the group consisting of a filler, a diffusing agent, a pigment, a phosphor, and a reflective substance in order to have a desired function. As the diffusing agent that can be used here, barium titanate, titanium oxide, aluminum oxide, silicon oxide and the like are preferable. In addition, organic or inorganic dyes or pigments can be included for the purpose of cutting light with an undesired wavelength. Furthermore, it is also preferable that the sealing material 4 contains one or more phosphors that convert the wavelength of light from the semiconductor light emitting element 5. Moreover, the sealing material 4 may contain the ultraviolet absorber and antioxidant other than said adjuvant.

[Phosphor]
By injecting and molding the composition of the phosphor described below and the sealing material 4 into the concave portion 8 of the resin molded body 2, or by coating the thin film on an appropriate transparent support, It can be used as a conversion member.

  The phosphor is not particularly limited as long as it is a substance that is directly or indirectly excited by the light emitted from the semiconductor light emitting element 5 and emits light having a different wavelength. Even the body can be used. For example, one or more of blue phosphor, green phosphor, yellow phosphor, orange to red phosphor as exemplified below can be used. It is preferable to appropriately adjust the type and content of the phosphor used so that a desired emission color can be obtained.

As the blue phosphor, those having an emission peak wavelength of usually 420 nm or more, particularly 430 nm or more, more preferably 440 nm or more, and usually 490 nm or less, especially 480 nm or less, and further 470 nm or less are preferable. Specifically, (Ca, Sr, Ba) MgAl ₁₀ O ₁₇ : Eu, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ (Cl, F) ₂ : Eu, (Ba, Ca, Mg, Sr) ₂ SiO ₄ : Eu, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ (Cl, F) ₂ : Eu, (Ba, Ca, Sr) ₃ MgSi ₂ O ₈ : Eu are preferred, Ba, Sr) MgAl ₁₀ O ₁₇ : Eu, (Ca, Sr, Ba) ₁₀ (PO ₄ ) ₆ (Cl, F) ₂ : Eu, Ba ₃ MgSi ₂ O ₈ : Eu are more preferable.

The green phosphor preferably has an emission peak wavelength in the range of usually 500 nm or more, particularly 510 nm or more, more preferably 515 nm or more, and usually 550 nm or less, especially 542 nm or less, and even 535 nm or less. Specifically, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce, CaSc ₂ O ₄ : Ce, Ca ₃ (Sc, Mg) ₂ Si ₃ O ₁₂ : Ce, (Sr, Ba) ₂ SiO ₄ : Eu Β-type sialon, (Ba, Sr) ₃ Si ₆ O ₁₂ : N ₂ : Eu, SrGa ₂ S ₄ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, Mn are preferable.

As the yellow phosphor, those having an emission peak wavelength of usually 530 nm or more, particularly 540 nm or more, more preferably 550 nm or more, and usually 620 nm or less, especially 600 nm or less, further 580 nm or less are suitable. The yellow _{phosphor, Y 3 Al 5 O 12:} Ce, (Y, Gd) 3 Al 5 O 12: Ce, (Sr, Ca, Ba, Mg) 2 SiO 4: Eu, (Ca, Sr) Si 2 N ₂ O ₂ : Eu, (La, Y, Gd, Lu) ₃ (Si, Ge) ₆ N ₁₁ : Ce are preferable.

As the orange to red phosphor, those having an emission peak wavelength in the range of usually 570 nm or more, particularly 580 nm or more, more preferably 585 nm or more, and usually 780 nm or less, particularly 700 nm or less, further 680 nm or less are preferable. Specifically, (Ca, Sr, Ba) ₂ Si ₅ (N, O) ₈ : Eu, (Ca, Sr, Ba) Si (N, O) ₂ : Eu, (Ca, Sr, Ba) AlSi ( N, O) ₃ : Eu, (Sr, Ba) ₃ SiO ₅ : Eu, (Ca, Sr) S: Eu, (La, Y) ₂ O ₂ S: Eu, Eu (dibenzoylmethane) ₃ . Β-diketone Eu complex such as 10-phenanthroline complex, carboxylic acid Eu complex, K ₂ SiF ₆ : Mn is preferred, (Ca, Sr, Ba) ₂ Si ₅ (N, O) ₈ : Eu, (Sr, Ca) AlSi (N, O): Eu, (La, Y) ₂ O ₂ S: Eu, and K ₂ SiF ₆ : Mn are more preferable. As the orange phosphor, (Sr, Ba) ₃ SiO ₅ : Eu, (Sr, Ba) ₂ SiO ₄ : Eu, (Ca, Sr, Ba) ₂ Si ₅ (N, O) ₈ : Eu, ( Ca, Sr, Ba) AlSi (N, O) ₃ : Ce is preferred.

  As described above, in the semiconductor light emitting device package 7 according to this embodiment, the first surface 2a extends from the first surface 2a to the second surface 2b of the resin molded body 2 and extends along the second surface 2b. Since the first lead frame 3a includes the extended lead portion 14a, the rigidity of the first lead frame 3a itself is increased, and accordingly, the rigidity of the package for the semiconductor light emitting device is also increased. Therefore, it is possible to improve the heat dissipation characteristics and mechanical strength of the semiconductor light emitting device package 7. Therefore, even if a relatively soft material is used for the resin molded body, the first lead frame 3a and the second lead frame 3b are not distorted and the entire semiconductor light emitting device package 7 is not distorted.

  Further, when the semiconductor light emitting device 5 is mounted using the semiconductor light emitting device package 7 in the present embodiment and the bonding wire is melted by applying ultrasonic waves to perform wire bonding, the superposition in the semiconductor light emitting device package 7 itself is achieved. Since the absorption of sound waves is reduced, the stability of wire bonding is improved.

  Since the semiconductor light emitting device package of the present invention has good heat dissipation, excellent strength, high durability, and high reflectance, it should be used suitably for applications that require high heat dissipation and high efficiency, such as high brightness lighting and liquid crystal backlights. I can do it. In a liquid crystal backlight application, a rectangular package shape having a long side: short side ratio of 2: 1 to 4: 1 can be preferably used. Specifically, 5 × 3 mm, 6 × 3 mm, 7 × 3 mm, 7 × 2 mm, etc. are exemplified, among which 6 × 3 mm is easy to mold, and a highly efficient optical design is combined with a semiconductor light emitting element of 500 × 1000 μm or the like. It is preferable because it is possible. In high-luminance lighting applications, in addition to the rectangular package shape, a square package shape can be suitably used. For example, 1 to 10 semiconductor light emitting elements are provided in a package of about 5 mm square, 7 mm square, or 10 mm square. Installed and used as a high brightness light source. When mounting more than 10 semiconductor light-emitting elements in a package with a large opening diameter exceeding 10 mm square, the area of the lead frame in the resin molding is also increased, and the branching structure and resin flow described later are improved as necessary. The package structure can be strengthened by using a mold lock hole for improving the adhesion to the lead frame.

(Modification)
In the first lead frame 3a of the first embodiment described above, the first external lead portion 12a extends along the second surface 2b of the resin molded body 2, and the first connecting lead portion 13a is the first external lead portion 12a. It extended obliquely upward from one end toward the first exposed lead portion 11a. Similarly, in the second lead frame 3b of the first embodiment, the second external lead portion 12b extends along the second surface 2b of the resin molded body 2, and the second connection lead portion 13b is the second external lead portion 12b. From one end to the second exposed lead portion 11b. However, it is not limited to such a lead frame structure, and may be a lead frame structure as shown in FIG. 3, for example. FIG. 3 is a cross-sectional view of a semiconductor light emitting device having a lead frame having a form different from that of the first embodiment.

  Specifically, the first external lead portion 12a ′ extends along the side surface of the resin molded body 2 (that is, the Z-axis direction), and the lower surface thereof is flush with the second surface 2b of the resin molded body 2. In the position, it extends outside (that is, extends in the −Y-axis direction. The first connecting lead portion 13a ′ extends in the −Y-axis direction in the same plane as the first exposed lead portion 11a.

  Similarly, the second external lead portion 12b ′ extends along the side surface of the resin molded body 2 (that is, in the Z-axis direction), and the lower surface thereof is at the same plane as the second surface 2b of the resin molded body 2. Is extended outside (that is, extending in the Y-axis direction. The second connecting lead portion 13b 'extends in the Y-axis direction in the same plane as the second exposed lead portion 11b.

  Since other structures are the same as those of the first embodiment described above, description of other parts is omitted. Even with such a lead frame structure, the same effects as those of the first embodiment described above can be obtained.

Second Embodiment
In the first embodiment, only the first lead frame 3a includes the extended lead portion. However, both the first lead frame 3a and the second lead frame 3b may include the extended lead portion. Alternatively, the connecting lead portion that connects the external lead portion and the exposed lead portion may be branched, and the exposed lead portion may be connected to each of the branched connecting lead portions. The semiconductor light emitting device 20 having such a lead frame will be described in detail with reference to FIGS. 4A is a plan view of the semiconductor light emitting device 20, and FIG. 4B is a cross-sectional view taken along line IV (b) -IV (b) of FIG. 4A. 4 (c) is a cross-sectional view taken along line IV (c) -IV (c) in FIG. 4 (a), and FIG. 4 (d) shows the lead frame when the semiconductor light emitting device 20 is viewed from above. It is a top view. 1 and 2, the width direction of the semiconductor light emitting device 20 is defined as the X direction, the longitudinal direction is defined as the Y direction, and the height direction is defined as the Z direction. Further, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIGS. 4A to 4D, the first lead frame 21a and the second lead frame 21b are arranged to mesh with each other and extend in the Y-axis direction as a whole. The semiconductor light emitting element 5 is mounted on the first lead frame 21a.

  As shown in FIGS. 4A to 4D, the first lead frame 21 a and the second lead frame 21 b are exposed on the second surface 2 b of the resin molded body 2. Further, the first lead frame 21a and the second lead frame 21b protrude from the side portion of the second surface 2b of the resin molded body 2 toward the outside.

  As shown in FIG. 4B, the first lead frame 21a is formed by being entirely bent, and is exposed from the bottom surface of the concave portion 8 of the resin molded body 2, and the first exposed lead portion 22a and the resin The first external lead portion 23a located outside the molded body 2 and the first connecting lead that connects one end of the first exposed lead portion 22a (that is, the end portion on the −Y axis direction side) and the first external lead portion 23a. It extends from the other end of the portion 24a and the first exposed lead portion 22a (that is, the end portion on the + Y-axis direction side) toward the second surface 2b of the resin molded body 2 and its lower surface is exposed from the second surface 2b. The first extending lead portion 25a extends along the second surface 2b. Therefore, the first lead frame 21a has a convex bent structure in which a part projects in the + Z direction.

  More specifically, the first exposed lead portion 22a is formed flat so that the top surface is exposed from the bottom surface of the recess 8. The semiconductor light emitting element 5 is mounted on the first exposed lead portion 22a. The bonding wire 6 is connected to the surface of the first exposed lead portion 22a, and one of the first exposed lead portion 22a and the external electrode of the semiconductor light emitting element 5 is electrically connected by the bonding wire 6.

  The first external lead portion 23a is formed flat along the second surface 2b of the resin molded body 2 with its lower surface exposed to the second surface 2b. Here, the first external lead portion 23 a includes a portion exposed on the second surface 2 b of the resin molded body 2.

  The first connecting lead portion 24a connects the first external lead portion 23a and the first exposed lead portion 22a located above (that is, the + Z-axis direction side) above the first external lead portion 23a. 1 Extends obliquely upward from one end of the external lead portion 23a. Depending on the positional relationship between the first external lead portion 23a and the first exposed lead portion 22a, the first connecting lead portion 24a may extend along the Z-axis direction. By shortening the first connecting lead portion 24a, the thermal resistance of the semiconductor light emitting device package of the present invention can be lowered.

  The first extending lead portion 25a extends from the end opposite to the end of the first exposed lead portion 22a connected to the first connecting lead portion 24a so as to penetrate the resin molded body 2. Specifically, the first extending lead portion 25 a extends obliquely downward from the bottom surface of the concave portion 8 of the resin molded body 2 toward the second surface 2 b of the resin molded body 2. Further, the first extending lead portion 25a whose lower surface is exposed from the second surface 2b exposes its lower surface and extends along the second surface 2b. That is, the first extending lead portion 25a has a bent structure. Depending on the positional relationship between the first exposed lead portion 22a and the portion extending along the second surface 2b of the first extended lead portion 25a, the first extended lead portion 25a extends along the Z-axis direction. It may extend. By shortening the first extending lead portion 25a, the thermal resistance of the semiconductor light emitting device package of the present invention can be lowered. Accordingly, the first extending lead portion 25a may not be extended along the second surface 2b but may be exposed from the second surface 2b as long as the first extending lead portion 25a can be sufficiently thermally connected to the wiring board to be mounted.

  As shown in FIG. 4C, the second lead frame 21 b is formed by being entirely bent, and the second exposed lead portion is exposed from the bottom surface of the concave portion 8 of the resin molded body 2. 22b, 22c, the second external lead portion 23b positioned outside the resin molded body 2, and one end of each of the second exposed lead portions 22b, 22c (that is, the + Y axial direction side end) and the second external lead portion From the other end of the second connecting lead portions 24b and 24c and the second exposed lead portions 22b and 22c (that is, the end portion on the −Y-axis direction side) connecting to the second molded portion 2 toward the second surface 2b. The second extending lead portions 25b and 25c extend along the second surface 2b. The second extending lead portions 25b and 25c extend along the second surface 2b. Accordingly, the second lead frame 21b has a structure in which two second connecting lead portions 24b and 24c are branched at the second external lead portion 23b.

  More specifically, the second exposed lead portions 22b and 22c are formed flat so that the top surface is exposed from the bottom surface of the recess 8. The bonding wires 6 are connected to the surfaces of the second exposed lead portions 22 b and 22 c, and the second exposed lead portions 22 b and 22 c and one of the external electrodes of the semiconductor light emitting element 5 are electrically connected by the bonding wires 6.

  The second external lead portion 23b is formed flat along the second surface 2b of the resin molded body 2 with its lower surface exposed to the second surface 2b. Here, the second external lead portion 23 b includes a portion exposed on the second surface 2 b of the resin molded body 2.

  The second connection lead portions 24b and 24c connect the second external lead portion 23b and the second exposed lead portions 22b and 22c located above (that is, the + Z-axis direction side) the second external lead portion 23b. As described above, the second external lead portion 23b extends obliquely upward from one end. Depending on the positional relationship between the second external lead portion 23b and the second exposed lead portions 22b and 22c, the second connection lead portions 24b and 24c may extend along the Z-axis direction. By shortening the second connection lead portions 24b and 24c, the thermal resistance of the semiconductor light emitting device package of the present invention can be lowered.

  The second extending lead portions 25b and 25c penetrate the resin molded body 2 from the end portion opposite to the end portion of the second exposed lead portions 22b and 22c connected to the second connecting lead portions 24b and 24c. It extends like so. Specifically, the second extending lead portions 25 b and 25 c extend obliquely downward from the bottom surface of the concave portion 8 of the resin molded body 2 toward the second surface 2 b of the resin molded body 2. Further, the second extending lead portions 25b and 25c having the lower surface exposed from the second surface 2b expose the lower surface and extend along the second surface 2b. That is, the second extending lead portions 25b and 25c have a bent structure. Depending on the positional relationship between the second exposed lead portions 22b and 22c and the portions extending along the second surface 2b of the second extended lead portions 25b and 25c, the second extended lead portions 25b and 25c You may extend along the Z-axis direction. By shortening the second extending lead portions 25b and 25c, the thermal resistance of the semiconductor light emitting device package of the present invention can be lowered. Accordingly, the second extending lead portions 25b and 25c may not be extended along the second surface 2b but may be exposed from the second surface 2b as long as the second extending lead portions 25b and 25c can be sufficiently thermally connected to the wiring board to be mounted. .

  In addition, as shown in FIG. 4D, when the first lead frame 21a and the second lead frame 21b are projected on the same plane (for example, the second surface 2b of the resin molded body 2), the first lead frame The first extended lead portion 25a of 21a is the second exposed lead portion 22b and second connecting lead portion 24b of the second lead frame 21b, and the second exposed lead portion 22c and second connecting lead portion of the second lead frame 21b. 24c. That is, when the first lead frame 21a and the second lead frame 21b are projected onto the second surface 2b of the resin molded body 2, the first lead frame 21a and the second lead frame 21b are engaged with each other while being separated from each other. .

  As described above, the first lower surface exposed from the lower surface of the first external lead portion 23a of the first lead frame 21a, the lower surface of the second external lead portion 23b of the second lead frame 21b, and the second surface 2b of the resin molded body 2. A part of the lower surface of the extended lead part 25a and a part of the lower surface of the second extended lead parts 25b and 25c extend along the second surface 2b of the resin molded body 2 and are flush with the second surface 2b. positioned. Therefore, the second surface 2b side of the resin molded body 2 is a flat surface, the lower surface of the first external lead portion 23a of the first lead frame 21a, the lower surface of the second external lead portion 23b of the second lead frame 21b, and the resin The semiconductor light emitting device 20 is mounted on a part of the lower surface of the first extension lead part 25a exposed from the second surface 2b of the molded body 2 and a part of the lower surface of the second extension lead part 25b, 25c. It arrange | positions in the position which can contact | abut with respect to the surface of the mounting board | substrate which becomes. The first external lead portion 23a of the first lead frame 21a, the second external lead portion 23b of the second lead frame 21b, and the first extended lead portion 25a exposed from the second surface 2b of the resin molded body 2 And part of the second extended lead portions 25b and 25c correspond to the shape of the surface of the mounting substrate and can be brought into contact with the plane, the same plane as the second surface 2b of the resin molded body 2 It does not have to be located.

  In the present embodiment, the first external lead portion 23a and the second external lead portion 23b are defined as outer leads, and the first exposed lead portion 22a, the second exposed lead portions 22b and 22c, and the first connecting lead portion 24a. The second connecting lead portions 24b and 24c, the first extending lead portion 25a, and the second extending lead portions 25b and 25c may be defined as inner leads. However, the first extension lead portion 25a and the second extension lead portions 25b and 25c may be defined as outer leads depending on the substrate on which the semiconductor light emitting device package is mounted.

  As described above, in the package for a semiconductor light emitting device in the present embodiment, the first extension extending along the second surface 2b through the first surface 2a to the second surface 2b of the resin molded body 2. The first lead frame 21a is provided with the lead-out lead portion 25a, and the second extending lead portion that extends from the first surface 2a to the second surface 2b of the resin molded body 2 and extends along the second surface 2b. Since the second lead frame 21b includes 25b and 25c, the rigidity of the first lead frame 21a itself and the second lead frame 21b itself increases, and accordingly, the rigidity of the package for the semiconductor light emitting device also increases. Therefore, it is possible to improve the heat dissipation characteristics and mechanical strength of the package for the semiconductor light emitting device. Therefore, even if a relatively soft material is used for the resin molded body, the first lead frame 21a and the second lead frame 21b and the entire semiconductor light emitting device package are not distorted.

  Also, when a semiconductor light emitting device is mounted using the semiconductor light emitting device package in the present embodiment and the bonding wire is melted by applying ultrasonic waves to perform wire bonding, the ultrasonic wave in the semiconductor light emitting device package itself is also applied. Since the absorption is reduced, the stability of wire bonding is improved.

(Modification)
The structure of the first lead frame 21a and the second lead frame 21b in the second embodiment may be the same as the structure of the first lead frame 3a and the second lead frame 3b in the modification of the first embodiment. . That is, a part of the first external lead portion 23a and the second external lead portion 23b extends along the side surface of the resin molded body 2, and the first connection lead portion 24a and the second connection lead portions 24b and 24c are in the Y-axis direction. It may extend along.

<Third Embodiment>
In the second embodiment, one of the first lead frame and the second lead frame is branched, and the exposed lead portion is connected to each of the branched connection lead portions. The connection lead part which connects the external lead part of both the lead frame and the second lead frame and the exposed lead part may be branched, and the exposed lead part may be connected to each of the branched connection lead parts. The semiconductor light emitting device 30 having such a lead frame will be described in detail with reference to FIGS. 5 and 6A to 6C.

  Here, FIG. 5 is a plan view of the semiconductor light emitting device 30. 6A is a sectional view taken along line VI (a) -VI (a) in FIG. 5, and FIG. 6B is taken along line VI (b) -VI (b) in FIG. FIG. 6C is a plan view of the lead frame when the semiconductor light emitting device 30 is viewed from above. 1 and 2, the width direction of the semiconductor light emitting device 30 is defined as the X direction, the longitudinal direction is defined as the Y direction, and the height direction is defined as the Z direction. Since the structure other than the lead frame is the same as that of the first embodiment or the second embodiment, components other than the lead frame are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIGS. 5 and 6A to 6C, the first lead frame 31 a is formed by being entirely bent, and is exposed from the bottom surface of the concave portion 8 of the resin molded body 2. 1 exposed lead portions 32a, 32b, 32c, one end of each of the first external lead portion 33a and the first exposed lead portions 32a, 32b, 32c located outside the resin molded body 2 (that is, the end on the −Y axis direction side) Portion) and the first external lead portion 33a and the other end of the first exposed lead portion 32c (that is, the end portion on the + Y axis direction side). The first extending lead portion 35a extends toward the second surface 2b and is exposed from the second surface 2b. Accordingly, the first lead frame 31a has a structure in which the three first connecting lead portions 34a, 34b, and 34c are branched at the first external lead portion 33a.

  More specifically, the first exposed lead portions 32 a to 32 c are formed flat so that the top surface is exposed from the bottom surface of the recess 8. The semiconductor light emitting element 5 is mounted on the first exposed lead portion 32c. The bonding wires 6 are connected to the surfaces of the first exposed lead portions 32 a and 32 b, and one of the first exposed lead portions 32 a and 32 b and the external electrode of the semiconductor light emitting element 5 is electrically connected by the bonding wires 6. .

  The first external lead portion 33a is formed flat along the second surface 2b of the resin molded body 2 with its lower surface exposed to the second surface 2b. Here, the first external lead portion 33 a includes a portion exposed on the second surface 2 b of the resin molded body 2.

  The first connecting lead portion 34a connects the first external lead portion 33a and the first exposed lead portion 32a located above (that is, the + Z-axis direction side) above the first external lead portion 33a. 1 It extends obliquely upward from one end of the external lead portion 33a. Depending on the positional relationship between the first external lead portion 33a and the first exposed lead portion 32a, the first connecting lead portion 34a may extend along the Z-axis direction. By shortening the first connecting lead portion 34a, the thermal resistance of the package for semiconductor light emitting device of the present invention can be lowered.

  Similar to the first connection lead part 34a, the first connection lead part 34b includes a first external lead part 33a and a first exposed lead located above the first external lead part 33a (that is, on the + Z-axis direction side). It extends obliquely upward from one end of the first external lead portion 33a so as to connect the portion 32b. Depending on the positional relationship between the first external lead portion 33a and the first exposed lead portion 32b, the first connection lead portion 34b may extend along the Z-axis direction. By shortening the first connecting lead portion 34b, the thermal resistance of the package for semiconductor light emitting device of the present invention can be lowered.

  Similar to the first connection lead portions 34a and 34b, the first connection lead portion 34c is located above the first external lead portion 33a and the first external lead portion 33a (that is, on the + Z-axis direction side). It extends obliquely upward from one end of the first external lead portion 33a so as to connect the exposed lead portion 32c. Depending on the positional relationship between the first external lead portion 33a and the first exposed lead portion 32c, the first connecting lead portion 34c may extend along the Z-axis direction. By shortening the first connecting lead portion 34c, the thermal resistance of the package for semiconductor light emitting device of the present invention can be lowered.

  The first extending lead portion 35a extends from the end opposite to the end of the first exposed lead portion 32c connected to the first connecting lead portion 34c so as to penetrate the resin molded body 2. Specifically, the first extending lead portion 35 a extends obliquely downward from the bottom surface of the recess 8 of the resin molded body 2 toward the second surface 2 b of the resin molded body 2. Further, the first extending lead portion 35a whose lower surface is exposed from the second surface 2b extends also along the second surface 2b. That is, the first extending lead portion 35a has a bent structure. Depending on the positional relationship between the first exposed lead portion 32c and the portion extending along the second surface 2b of the first extended lead portion 35a, the first extended lead portion 35a extends along the Z-axis direction. It may extend. By shortening the first extending lead portion 35a, the thermal resistance of the package for semiconductor light emitting device of the present invention can be lowered. Therefore, the first extending lead portion 35a may not be extended along the second surface 2b but may be exposed from the second surface 2b as long as the first extending lead portion 35a can be sufficiently thermally connected to the wiring board to be mounted.

  As shown in FIGS. 5 and 6A to 6C, the second lead frame 31b is formed by being entirely bent, and its upper surface is exposed from the bottom surface of the recess 8 of the resin molded body 2. The second exposed lead portions 32d and 32e, the second external lead portion 33b positioned outside the resin molded body 2, and one end of each of the second exposed lead portions 32d and 32e (that is, the end portion on the + Y axis direction side) ) And the second external lead portion 33b. The second connection lead portions 34d and 34e are connected to each other. Therefore, the second lead frame 31b has a structure in which two second connecting lead portions 34d and 34e are branched at the second external lead portion 33b.

  More specifically, the second exposed lead portions 32 d and 32 e are formed flat so as to expose the upper surface from the bottom surface of the recess 8. The bonding wires 6 are connected to the surfaces of the second exposed lead portions 32d and 32e, and the second exposed lead portions 32d and 32e and one of the external electrodes of the semiconductor light emitting element 5 are electrically connected by the bonding wires 6. .

  The second external lead portion 33b is formed flat along the second surface 2b of the resin molded body 2 with its lower surface exposed to the second surface 2b. Here, the second external lead portion 33 b includes a portion exposed on the second surface 2 b of the resin molded body 2.

  The second connecting lead part 34d connects the second external lead part 33b and the second exposed lead part 32d located above (that is, the + Z-axis direction side) above the second external lead part 33b. 2 Extending obliquely upward from one end of the external lead portion 33b. Depending on the positional relationship between the second external lead portion 33b and the second exposed lead portion 32d, the second connection lead portion 34d may extend along the Z-axis direction. By shortening the second connecting lead portion 34d, the thermal resistance of the package for semiconductor light emitting device of the present invention can be lowered.

  Similar to the second connection lead portion 34d, the second connection lead portion 34e includes a second external lead portion 33b and a second exposed lead located above the second external lead portion 33b (that is, on the + Z-axis direction side). It extends obliquely upward from one end of the second external lead portion 33b so as to connect the portion 32e. Depending on the positional relationship between the second external lead portion 33b and the second exposed lead portion 32e, the second connection lead portion 34e may extend along the Z-axis direction. By shortening the second connecting lead portion 34e, the thermal resistance of the package for semiconductor light emitting device of the present invention can be lowered.

  In addition, as shown in FIG. 6C, when the first lead frame 31a and the second lead frame 31b are projected on the same plane (for example, the second surface 2b of the resin molded body 2), the first lead frame The first extended lead portion 35a of 31a is the second exposed lead portion 32d and second connecting lead portion 34d of the second lead frame 31b, and the second exposed lead portion 32e and second connecting lead portion of the second lead frame 31b. 34e. That is, when the first lead frame 31a and the second lead frame 31b are projected onto the second surface 2b of the resin molded body 2, the first lead frame 31a and the second lead frame 31b are engaged with each other while being separated from each other. .

  As described above, the first external lead portion 33a of the first lead frame 31a, the second external lead portion 33b of the second lead frame 31b, and the first extended lead portion exposed from the second surface 2b of the resin molded body 2 Each lower surface of a part of 35a extends along the second surface 2b of the resin molded body 2 and is located on the same plane as the second surface 2b. Accordingly, the first external lead portion 33a of the first lead frame 31a, the second external lead portion 33b of the second lead frame 31b, and the first extended lead portion 35a exposed from the second surface 2b of the resin molded body 2 are provided. Each lower surface of the part is disposed at a position where it can come into contact with the surface of the mounting substrate on which the semiconductor light emitting device 30 is to be mounted. The first external lead portion 33a of the first lead frame 31a, the second external lead portion 33b of the second lead frame 31b, and one of the first extended lead portions 35a exposed from the second surface 2b of the resin molded body 2 As long as each lower surface of the portion corresponds to the shape of the surface of the mounting substrate and can be brought into contact with the surface, it may not be located on the same plane as the second surface 2 b of the resin molded body 2.

  In the present embodiment, the first external lead portion 33a and the second external lead portion 33b are defined as outer leads, and the first exposed lead portions 32a, 32b, 32c, the second exposed lead portions 32d, 32e, the first The connecting lead portions 34a, 34b, 34c, the second connecting lead portions 34d, 34e, and the first extending lead portion 35a may be defined as inner leads. However, the first extending lead portion 35a may be defined as an outer lead depending on the substrate on which the semiconductor light emitting device package is mounted.

  As described above, in the package for a semiconductor light emitting device in the present embodiment, the first extension extending along the second surface 2b through the first surface 2a to the second surface 2b of the resin molded body 2. Since the first lead frame 31a includes the output lead portion 35a, the rigidity of the first lead frame 31a itself and the second lead frame 31b itself increases, and accordingly, the rigidity of the semiconductor light emitting device package also increases. Therefore, it is possible to improve the heat dissipation characteristics and mechanical strength of the package for the semiconductor light emitting device. Therefore, even if a relatively soft material is used for the resin molded body, the first lead frame 31a and the second lead frame 31b are not distorted and the entire semiconductor light emitting device package is not distorted.

  Also, when a semiconductor light emitting device is mounted using the semiconductor light emitting device package in the present embodiment and the bonding wire is melted by applying ultrasonic waves to perform wire bonding, the ultrasonic wave in the semiconductor light emitting device package itself is also applied. Since the absorption is reduced, the stability of wire bonding is improved.

  Further, when the first lead frame 31a and the second lead frame 31b are projected onto the second surface 2b of the resin molded body 2, the first lead frame 31a and the second lead frame 31b are separated from each other and mesh with each other. Thus, the mechanical strength of the semiconductor light emitting device package can be further improved.

(Modification)
The structure of the first lead frame 31a and the second lead frame 31b in the third embodiment may be the same as the structure of the first lead frame 3a and the second lead frame 3b in the modification of the first embodiment. . That is, a part of the first external lead portion 33a and the second external lead portion 33b extends along the side surface of the resin molded body 2, and the first connection lead portions 34a to 34c and the second connection lead portions 34d and 34e are connected to the Y axis. It may extend along the direction.

<Example>
In the following, evaluation was performed by comparing the examples of the semiconductor light emitting device of the present invention with the comparative example of the conventional semiconductor light emitting device by various characteristics and tests. In the evaluation, two kinds of examples and four kinds of comparative examples are manufactured, evaluation of the reflectance of the resin molding material, evaluation of the viscosity of the resin molding material, and the bifunctional silicon content of the resin molding material. Evaluation, evaluation of Shore D hardness of resin molding material, heat radiation simulation of semiconductor light emitting device, lighting test of semiconductor light emitting device, compressive stress test of semiconductor light emitting device package, torsional stress test of semiconductor light emitting device package, and semiconductor light emission A wire bonding stability test of the device package was performed. Below, the structure and manufacturing method of each Example and a comparative example are demonstrated.

Example 1
The structure of Example 1 as the semiconductor light emitting device of the present invention is the same as that of the third embodiment (FIGS. 5 and 6) described above. Below, the concrete material and manufacturing method of each structural member are demonstrated.

  As one of the materials of the resin molding, vinyl group-containing polydimethylsiloxane (vinyl group: containing 0.3 mmol / g, viscosity 4700 mPa · s. Containing platinum complex catalyst 14 ppm) and hydrosilyl group-containing polydimethylsiloxane (vinyl group: 0.04 mmol / g contained, hydrosilyl group: 4.8 mmol / g contained, viscosity 700 mPa · s) and cure retarding component ((curing rate control agent) containing polydimethylsiloxane (vinyl group: 0.2 mmol / g contained, hydrosilyl Group: 0.1 mmol / g contained, alkynyl group: contained 0.2 mmol / g, 500 mPa · s) at a ratio of 100: 10: 5, and a liquid thermosetting polyorganosiloxane having a platinum concentration of 12.2 ppm was used. The liquid thermosetting polyorganosiloxane had a refractive index of 1.41.

  Next, 35 parts by weight of the obtained polydimethylsiloxane composition was mixed with 60.3 parts by weight of alumina particles having an α crystal diameter of 0.3 μm as a white pigment, and 4.7 parts by weight of silica fine particles “AEROSIL RX200” manufactured by Nippon Aerosil Co., Ltd. The mixture was agitated so that the contents became uniform while flowing cooling water at 23 ° C. through the agitation tank with a rotation and revolution type agitation mixer. Furthermore, it defoamed by stirring in a vacuum state and obtained the liquid thermosetting white silicone resin composition. This liquid thermosetting white silicone resin composition was used as a resin molding material. Hereinafter, the resin molding material is also referred to as a composition A.

For the semiconductor light-emitting device, which is a cup-shaped surface-mount package formed by liquid injection molding of the above-described curable white silicone resin composition and a 0.2-mm-thick copper lead frame that has been silver-plated and previously bent. A package was molded. Concrete molding was performed at a mold temperature of 180 ° C., an injection pressure of 1000 kg / cm ² , and a curing time of 20 seconds. Moreover, the specific shape of the package for a semiconductor light emitting device is a rectangular cup shape in which the resin molded body has a recess of 3 mm length × 6 mm width × 1 mm height.

  When the above-described package for a semiconductor light emitting device was observed, no burr was produced, and the package was free from short molds and release defects. Further, the above-described semiconductor light emitting device package was cut with a microtome in a state of being frozen with liquid nitrogen, and SEM observation of the package cross section was performed. The primary particle diameter of the alumina exposed in the cross section was 0.3 μm, and the aspect ratio of the primary particles was 1.48.

  Next, a silicone die-bonding material is formed on a lead frame (first exposed lead portion 32c) in which a 1 mm square semiconductor light emitting element (rated current 350 mA) having an emission wavelength of 400 nm is exposed on the bottom surface of the recess of the semiconductor light emitting device package. (Shin-Etsu Chemical Co., Ltd. product KER-3000-M2). Thereafter, the silicone die bond material was cured at 100 ° C. for 1 hour and further at 150 ° C. for 2 hours, and the mounting of the semiconductor light emitting element on the package for the semiconductor light emitting device was completed. Thereafter, a gold wire was used as the bonding wire, and the lead frame (first exposed lead portions 32a, 32b, 32d, 32e) and the external electrode of the semiconductor light emitting element were connected by the gold wire.

  Next, a sealing material was dropped into the recess of the semiconductor light emitting device package so as to be the same height as the edge of the recess, and the recess was filled with the sealing material. Here, a sealing material was obtained by the following method.

  Momentive Performance Materials Japan G.K. both ends silanol dimethyl silicone oil XC96-723 385g, methyltrimethoxysilane 10.28g, and zirconium tetraacetylacetonate powder 0.791g as a catalyst, , Weighed into a 500 ml three-necked flask equipped with a fractionating tube, Dimroth condenser and Liebig condenser, and stirred at room temperature for 15 minutes until the coarse particles of the catalyst were dissolved. Thereafter, the temperature of the reaction solution was raised to 100 ° C. to completely dissolve the catalyst, and initial hydrolysis was performed while stirring at 500 rpm for 30 minutes under 100 ° C. total reflux using a Dimroth condenser.

Subsequently, the distillation line was switched to the Liebig condenser side, nitrogen was blown into the liquid with SV20, and methanol, water, and by-product low-boiling silicon compounds were distilled off accompanied by nitrogen at 100 ° C. and 500 rpm. Stir for hours. The polymerization reaction was continued for 5 hours while raising and maintaining the temperature at 130 ° C. while blowing nitrogen into the liquid with SV20 to obtain a reaction liquid having a viscosity of 120 mPa · s. Here, “SV” is an abbreviation for “Space Velocity” and refers to the nitrogen blowing volume per unit time. For example, SV20 refers to blowing N ₂ in a volume 20 times that of the reaction solution in one hour.

  Nitrogen blowing was stopped and the reaction solution was once cooled to room temperature. Then, the reaction solution was transferred to an eggplant-shaped flask, and a methanol remaining in a minute amount at 120 ° C. and a pressure of 1 kPa on an oil bath using a rotary evaporator. Water and a low-boiling silicon compound were distilled off to obtain a solventless sealing material having a viscosity of 230 mPa · s.

  After filling the concave portion of the package for the semiconductor light emitting device with a sealing material, heat treatment is performed at 90 ° C. × 2 hours, then 110 ° C. × 1 hour, 150 ° C. × 3 hours in a thermostat to cure the sealing material. The semiconductor light emitting device was sealed. Thereby, manufacture of Example 1 was completed.

(Example 2)
The structure of Example 2 as the semiconductor light emitting device of the present invention is the same as that of the above-described modification of the third embodiment, that is, the lead frame is exposed from the side surface of the resin molded body and extends along the side surface. It is the structure extended also to the outer side along the 2nd surface of a resin molding. Since other specific materials and manufacturing methods are the same as those in the first embodiment, the detailed description thereof will be omitted.

(Comparative Example 1)
The structure of Comparative Example 1 as a conventional semiconductor light emitting device is the same as the structure without the first extending lead portion 35a of the semiconductor light emitting device of the third embodiment described above. That is, the comparative example 1 only has no extension lead part (first extension lead part 35a) of the example 1, and other structures and materials are the same. Therefore, since the specific material and manufacturing method of Comparative Example 1 are almost the same as those of Example 1, the specific description thereof is omitted.

(Comparative Example 2)
The structure of Comparative Example 2 as a conventional semiconductor light emitting device is the same as the structure without the first extending lead portion 35a of the semiconductor light emitting device of the modified example of the third embodiment described above. That is, the comparative example 2 does not have the extended lead portion (first extended lead portion 35a) of the second embodiment, and the other structures and materials are the same. Therefore, since the specific material and manufacturing method of Comparative Example 2 are almost the same as those of Example 1 and Example 2, description thereof is omitted.

(Comparative Example 3)
Comparative Example 3 as a conventional semiconductor light emitting device has a structure shown in FIGS. Here, FIG. 7A is a plan view of Comparative Example 3, and FIG. 7B is a cross-sectional view taken along line VII-VII in FIG. 7A. 1 and 2, the width direction of Comparative Example 3 is defined as the X direction, the longitudinal direction is defined as the Y direction, and the height direction is defined as the Z direction.

  Specifically, the comparative example 3 includes a resin molded body 52, a first lead frame 53a, a second lead frame 53b, a sealing material 54, a semiconductor light emitting element 55, and a bonding wire 56. More specifically, the comparative example 3 is a recess that is an element mounting portion of a package 57 for a semiconductor light emitting device obtained by integrally molding the resin molded body 52, the first lead frame 53a, and the second lead frame 53b. A semiconductor light emitting element 55 is mounted in 58, and external electrodes (not shown) of the semiconductor light emitting element 55 are connected to the first lead frame 53a and the second lead frame 53b via bonding wires 56, respectively. Further, a sealing material 54 is provided so as to cover the periphery of the semiconductor light emitting element 55 mounted on the semiconductor light emitting device package 57 and to fill the recess 58.

  The major difference between Comparative Example 3 and Examples 1, 2, and 3 is that the first lead frame 53a and the second lead frame 53b are not bent. That is, in the comparative example 3, a flat lead frame is used. Since the material of each member which comprises the comparative example 3 is the same as Example 1, the specific description of a material and a manufacturing method is abbreviate | omitted.

(Comparative Example 4)
The structure of Comparative Example 4 as a conventional semiconductor light emitting device is the same as that of Comparative Example 3. The difference between Comparative Example 4 and Comparative Example 3 is only the material of the resin molding. As a specific material for the resin molded body of Comparative Example 4, Genesta (registered trademark) TA112 (titania containing glass fiber), which is a polyphthalamide resin composition manufactured by Kuraray Co., Ltd., was used. Hereinafter, the polyphthalamide resin composition is also referred to as composition B. This resin can be molded under the same conditions as in Example 1 except that the cylinder temperature is 310 to 320 ° C., the mold temperature is 135 to 145 ° C., the injection pressure is 750 kg / cm ² , and the cooling time is 7 seconds. Since other members are the same as those in the first embodiment, descriptions of other materials and manufacturing methods are omitted.

<Evaluation of semiconductor light emitting device>
(Evaluation of reflectance)
The composition A used in Examples 1 and 2 and Comparative Examples 1 to 3 was cured with a hot press machine under conditions of a temperature of 150 ° C. and a time of 180 seconds to produce a circular test piece having a diameter of 13 mm. A test piece was prepared by cutting a 1 mm thick plate of composition B used in Comparative Example 4 into a size of about 10 mm square. About each test piece, the reflectance in the wavelength of 360 nm-740 nm was measured by 6 mm of measurement diameters using SPECTROTOPOMETER CM-2600d by Konica Minolta Co., Ltd. The measurement results are shown in Table 1 together with the reflectance values of the lead electrodes.

  Composition A exhibited a higher reflectance than Composition B and silver used for the surface of the lead frame in the entire region from ultraviolet to visible, which is the emission wavelength of the semiconductor light emitting device. Therefore, a semiconductor light emitting device including a resin molded body using the composition A compared to a package in which a lot of the composition part B and the lead frame (silver plating) is exposed regardless of the wavelength of light emitted from the semiconductor light emitting element. By using the package for a semiconductor device, it is possible to provide a semiconductor light emitting device with high brightness. In particular, in a semiconductor light emitting device that emits light including ultraviolet light, it is considered that a package for a semiconductor light emitting device including a resin molded body using the composition A can be suitably used. In addition, since the composition A has a higher reflectance than that of the lead frame (silver plating), a high-luminance semiconductor light-emitting device can be obtained by reducing the exposed area of the lead frame in the recess of the package for the semiconductor light-emitting device. It is thought that.

(Evaluation of viscosity)
About the composition A used in Example 1, 2 and Comparative Examples 1-3, the viscosity measurement was performed at the measurement temperature of 25 degreeC using the parallel plate in RMS-800 by Rheometrics. The results are shown in Table 2 and FIG.

From the evaluation results, the composition A used in Examples 1 and 2 and Comparative Examples 1 to 3 has a viscosity at 25 ° C. at shear rates of 1 s ⁻¹ and 100 s ⁻¹ , and the inclination of the liquid injection of the resin molded body. It was found to be suitable for molding.

(Evaluation of bifunctional silicon content)
Bifunctional silicon content for each of vinyl group-containing polydimethylsiloxane, hydrosilyl group-containing polydimethylsiloxane, and curing retarding component ((curing rate control agent) -containing polydimethylsiloxane), which are constituents of composition A before molding and curing The value calculated according to the weight ratio of each material at the time of forming the composition A was used as the bifunctional silicon content in the resin molded bodies of Examples 1 and 2 and Comparative Examples 1 to 3.

  Specifically, first, the total silicon content of the composition A before molding and curing was calculated by the following method. More specifically, sulfuric acid is added to a mixed solution of the vinyl group-containing polydimethylsiloxane, the hydrosilyl group-containing polydimethylsiloxane, and the curing retarding component, which are constituents of the composition A, and dry decomposition is performed. An acid was added to melt the alkali. After the alkali was melted, it was cooled, and ultrapure and hydrochloric acid were added and dissolved by heating. Thereafter, the total silicon content was measured with ICP-AES (JY-138ULtrace manufactured by Horiba, Ltd.) using the solution.

Next, using Tris (2,4-pentanedionato) cromiumIII as a relaxation accelerator, liquid ²⁹ Si-NMR measurement was performed under the following measurement conditions using tetramethylsilane as a reference substance, and the inclusion of bifunctional silicon in all silicon The rate was determined. Specifically, for each peak of the spectrum after Fourier transform, optimization calculation is performed by nonlinear least square method using the center position, height, and half width of the peak shape created by mixing Lorentz waveform and Gaussian waveform as variable parameters. The content of bifunctional silicon in the total silicon was determined based on the peak area ratio obtained.

〔Measurement condition〕
Equipment: JNM-AL400 made by JEOL
Probe: TUNABLE (10) (Si free, AT10 probe)
Spin: Off measurement mode: NNE
SCAN: 2048 times
Relaxation delay (PD + ACQTM): 15 sec sample tube: 10 mmφ Teflon (registered trademark) NMR sample tube
BF: 1.0Hz
Reference signal: TMS signal 0ppm
Temperature: Normal temperature solvent: Heavy acetone measurement time: 8.5 hours

  On the other hand, the bifunctional silicon content of the composition B used in Comparative Example 4 was measured by the following method. Specifically, first, a solid sample composed of the composition B was pulverized in advance, and sulfuric acid was added to the pulverized sample for dry decomposition, and then sodium carbonate and boric acid were added to perform alkali melting. After the alkali was melted, it was cooled, and ultrapure and hydrochloric acid were added and dissolved by heating. Thereafter, the total silicon content was measured with ICP-AES (JY-138ULtrace manufactured by Horiba, Ltd.) using the solution.

Next, using the pulverized sample, solid ²⁹ Si-NMR measurement was performed under the following conditions using the pulverized sample, and the content of bifunctional silicon in the total silicon was determined. Specifically, for each peak of the spectrum after Fourier transform, optimization calculation is performed by nonlinear least square method using the center position, height, and half width of the peak shape created by mixing Lorentz waveform and Gaussian waveform as variable parameters. The content of bifunctional silicon in the total silicon was determined based on the peak area ratio obtained.

〔Measurement condition〕
Apparatus: Varian NMR Systems 400WB manufactured by Varian
Probe: 7.5mmφCP / MAS probe Observation nucleus: 29Si
Measurement method: DD (Dipolar Decoupling) / MAS (Magic Angle Spinning) method
29Si resonance frequency: 79.43 MHz
1H resonance frequency: 399.84MHz
29Si 90 ° pulse width: 5 μs
1H decoupling frequency: 50Hz
MAS rotation speed: 4 kHz
Wait time *: 600s
Spectrum width: 39.49 kHz
Measurement temperature: Room temperature Integration count *: 128 times

  Table 3 shows the measurement results of the above-described bifunctional silicon content and Shore D hardness described below. The reference example is a commercially available methylsilicone-based resin molded product having another composition described later.

  From the measurement results described above, it was found that the composition A used in Examples 1 and 2 and Comparative Examples 1 to 3 contained 8.2% by weight of bifunctional silicon and was a silicone-based molded article having rubber elasticity. The resin molded body of the composition A itself has low mechanical strength, but by combining with the lead frame of each embodiment of the present invention, high heat dissipation characteristics can be obtained and the strength of the entire package is reinforced, which will be described later. As a result, the stability of wire bonding is also improved.

  Any resin molded body made of the composition A can be suitably applied to a semiconductor light emitting device that emits visible light. Furthermore, since the resin molded body made of the composition A can reduce the impact by rubber elasticity excellent in heat resistance and light resistance, it emits light having a high luminance and a large amount of heat generated, light including wavelength components in the near ultraviolet to ultraviolet range. It can also be suitably used in a semiconductor light emitting device, a semiconductor light emitting device having a large temperature impact, and the like.

(Evaluation of Shore D hardness)
After the test piece (thickness 3 mm) of the resin molded body made of the composition A used in Examples 1 and 2 and Comparative Examples 1 to 3 was post-cured for 10 minutes with a 200 ° C. thermostat, three test pieces were obtained. The Shore D hardness in the vicinity of the center of the test piece was measured using a rubber / plastic hardness meter KORI Durometer KR-25D. The Shore D hardness of the resin molded body made of the composition A used in Examples 1 and 2 and Comparative Examples 1 to 3 was about 40.

  On the other hand, the Shore D hardness of the resin molded body made of the composition B used in Comparative Example 4 was similarly changed to a test piece (thickness 3 mm) of the resin molded body made of the composition B for 10 minutes with a 200 ° C. incubator. After post-curing, three test pieces were stacked, and the Shore D hardness near the center of the test piece was measured using a rubber / plastic hardness meter KORI Durometer KR-25D. The Shore D hardness of the resin molding made of the composition B used in Comparative Example 4 was about 90 or more.

(Reference example)
In addition, the silicon ratio of D (bifunctional silicon) / T (trifunctional silicon) / Q4 functional silicon) in the resin molded body including the silica particles as the aggregate is 11.1 / 33.2 / 55.9. A resin molded product of a commercially available methylsilicone semiconductor light emitting device package containing titania containing 39% by weight of total silicon including filler and 10.8% by weight of reflective filler and molded by transfer molding The Shore D hardness was also confirmed by the same method. The specimen was very hard and brittle, and the specimen was cracked during measurement, but the Shore D hardness was estimated to be 90 or more. Further, the bifunctional silicon content of the resin molding of the methylsilicone semiconductor light emitting device package is 4.3% by weight, which is less than the preferred range, has no rubber elasticity, and is not cracked or chipped during mounting or machine transport. It was a lot of waste.

(Heat dissipation simulation)
In order to examine whether or not the lead frame of the semiconductor light emitting device includes an extended lead portion and the relationship between the type of resin constituting the resin molded body and the heat dissipation characteristics during lighting, the following heat dissipation simulation was performed.

  The heat dissipation simulation was performed using SolidWorks Flow Simulation as thermal fluid analysis software. The semiconductor light emitting devices that are symmetrical in the heat radiation simulation are Example 1, Example 2, Comparative Example 1, and Comparative Example 2, which are a semiconductor light emitting element (light source), a package for a semiconductor light emitting device, a lead frame, and a die bond layer. And a sealing material. Further, the heat reaching the back surface of the semiconductor light emitting device package is sufficiently dissipated.

  Table 4 shows the results of the heat dissipation simulation described above.

  When the extended lead portion is provided as in Example 1 and Example 2, the heat of the package for the semiconductor light emitting device is compared with the case where the extended lead portion is not provided as in Comparative Example 1 and Comparative Example 2. It was found that the resistance was greatly reduced. Further, when the extended lead portion is provided as in the first and second embodiments, the semiconductor light emission at equilibrium is obtained as compared with the case where the extended lead portion is not provided as in the first and second comparative examples. It was found that the temperature of the device was lowered by about 10 ° C.

  It is known that when a constant current is supplied to the semiconductor light emitting device, the radiant flux decreases as the temperature of the semiconductor light emitting element increases. The semiconductor light emitting devices of Example 1 and Example 2 are the same as in Comparative Example 1. Compared with the semiconductor light emitting device of Comparative Example 2, it is considered that the semiconductor light emitting device has excellent heat dissipation and further has high luminance characteristics.

  Examining the heat dissipation due to the difference in the position of the external lead portion of the lead frame, it was found that Example 1 had a lower thermal resistance than Example 2. This is probably because the path length from the semiconductor light emitting element mounting portion of the lead frame to the external lead portion is shorter in the first embodiment than in the second embodiment, so that the semiconductor light emitting element is efficiently radiated. .

(Lighting test)
Each of the semiconductor light emitting devices of Example 1 and Comparative Example 1 is actually lit on a heat dissipation substrate with a heat sink, and the difference in heat dissipation characteristics depending on whether or not the lead frame of the semiconductor light emitting device has an extended lead portion is a radiation flux. The impact on

  Specifically, in the semiconductor light emitting device of Example 1, the two external lead portions and the extended lead portion exposed on the back surface (second surface of the resin molded body) of the package for the semiconductor light emitting device are 2 cm × 2 cm in thickness. Soldering was performed on a 2 mm thick aluminum base heat dissipation board, and thermal and electrical connections were made. The solder used cream solder and reflowed at 260 degrees for 10 seconds. The aluminum base heat dissipation substrate used was a mounting surface other than electrodes covered with a white solder paste. Then, the back surface of the aluminum base heat dissipation substrate was screwed to an aluminum heat sink of 2.5 cm × 2.5 cm and thickness 1.5 cm through a heat conductive insulating sheet, and a lighting test was performed. In the lighting test, a driving current of 350 mA was applied to the semiconductor light emitting device package with the heat sink, and the radiant flux (μW) immediately after lighting and 60 seconds after lighting was measured. For measurement of the radiant flux, a spectroscope “USB2000” manufactured by Ocean Optics (integrated wavelength range: 350-800 nm, light receiving method: 100 mmφ integrating sphere) was used, and the spectroscope body was held in a 25 ° C. constant temperature bath. Measured.

  In the semiconductor light emitting device of Comparative Example 1, the two external lead portions exposed on the back surface (second surface of the resin molded body) of the semiconductor light emitting device package are placed on an aluminum base heat dissipation substrate having a size of 2 cm × 2 cm and a thickness of 2 mm. Soldered and thermal and electrical connections were made. Other matters are the same as those of the lighting test of Example 1 described above.

  The result of the heat dissipation test described above is shown in FIG. In FIG. 9, the horizontal axis represents the elapsed time (seconds) from lighting, and the vertical axis represents the radiant flux (mW).

  As shown in FIG. 9, the radiant flux at the beginning of lighting of the semiconductor light emitting device of Example 1 was higher than the radiant flux at the beginning of lighting of the semiconductor light emitting device of Comparative Example 1. Further, the time-dependent decrease in the radiant flux of the semiconductor light-emitting device of Example 1 was smaller than the time-dependent decrease in the radiant flux of the semiconductor light-emitting device of Comparative Example 1. Since the heat from the semiconductor light emitting element is dissipated not only from the external lead part but also from the extended lead part, in the semiconductor light emitting device of Example 1, the temperature of the semiconductor light emitting element is kept low, and heat storage over time is achieved. It is considered that rising response was obtained with high brightness. It was also found that the actual measurement result accurately reproduced the simulation result described above.

  From the above, in the present invention, by providing the extended lead portion to ensure high heat dissipation, it is possible to suppress the temperature quenching of the phosphor, and also due to the temperature dependence of the emission wavelength / radiant flux of the semiconductor light emitting device. The initial luminance reduction can be suppressed. Further, according to the present invention, it is possible to provide a semiconductor light emitting device having high brightness over a long period of time by preventing deterioration with time of a semiconductor light emitting element, a phosphor, a sealing member, a resin molded body of a semiconductor light emitting device package, and the like. Is possible.

(Compressive stress test)
Using the semiconductor light emitting device package according to Example 1 and Comparative Example 3, the longitudinal direction of the semiconductor light emitting device package (the Y-axis direction in FIG. 1 and the like) is compressed using a push needle of an A-type rubber hardness meter, The hardness indication value at the time of package destruction was read. Then, from the correlation between the indicated value of the A-type rubber hardness meter and the load separately measured on the platform scale, the actually measured value of the hardness meter was converted into the load, and the load at the time of breaking was obtained.

  As a result of the compressive stress test, the weight at the time of compressive fracture of the package for semiconductor light emitting device according to Example 1 was 356 g, and the weight at the time of compressive fracture of the package for semiconductor light emitting device according to Comparative Example 3 was 249 g. That is, it was found that the strength of the semiconductor light emitting device package according to Example 1 was about 1.4 times the strength of the semiconductor light emitting device package according to Comparative Example 3.

(Torsional stress test)
The semiconductor light emitting device package according to Example 1, the semiconductor light emitting device package according to Comparative Example 3, and the semiconductor light emitting device package according to Comparative Example 4 are exposed at both ends in the longitudinal direction (Y-axis direction in FIG. 1 and the like). The external lead part was sandwiched between two small tweezers, and a force in the twisting direction was applied to observe the deformation and destruction of the semiconductor light emitting device package.

  As a result of the torsional stress test, the package for the semiconductor light emitting device according to Example 1 was not deformed or damaged. On the other hand, the semiconductor light emitting device package according to Comparative Example 3 and the semiconductor light emitting device package according to Comparative Example 4 were deformed or damaged. Specifically, the semiconductor light emitting device package was broken at the boundary between the two lead frames in the Y-axis direction.

  In the package for the semiconductor light emitting device according to Example 1, since the connecting lead portion has a bent structure and a branched structure, the lead frame is prevented from being detached and peeled from the resin molded body, and moreover, two lead frames ( It is considered that the whole of the first lead frame and the second lead frame functions as a skeleton structure of the package and suppresses deformation of the package. Thereby, even if some deformation occurs in the semiconductor light emitting device package by applying stress to the semiconductor light emitting device package, the shape of the semiconductor light emitting device package is restored, and the lead frame is peeled off and the semiconductor light emitting device package is removed. It is considered that no fracture occurred. Further, in the semiconductor light emitting device package according to the first embodiment, when two lead frames are projected onto the second surface of the resin molded body, the lead frames are engaged with each other while being separated from each other. However, it is considered that no breakage or deformation occurred without bending between the two lead frames.

  On the other hand, in the package for the semiconductor light emitting device according to Comparative Example 3 and the package for the semiconductor light emitting device according to Comparative Example 4, the lead frame is easily peeled from the resin molded body against torsional stress, and between the two lead frames. A break occurred. In the semiconductor light emitting device package according to Comparative Example 3 and the semiconductor light emitting device package according to Comparative Example 4, when the two lead frames are projected onto the second surface of the resin molded body, the lead frames are Since they are spaced apart and do not engage with each other, there is no lead frame in the XZ cross section of the semiconductor light emitting device package, and there is a region made only of resin. It is considered that the resin-only region is structurally weak and the presence of the resin-only region is caused by the breakage of the package for the semiconductor light emitting device.

(Wire bonding stability test)
A wire bonding stability test was conducted on the semiconductor light emitting device package according to Example 1 and the semiconductor light emitting device package according to Comparative Example 1. Specifically, each of the semiconductor light emitting device package according to Example 1 and the semiconductor light emitting device package according to the semiconductor light emitting device package according to Comparative Example 1 has a 900 μm square having an emission wavelength of 400 nm and a thickness of 150 μm. A silicon die-bonding material (KER-3000-M2 manufactured by Shin-Etsu Chemical Co., Ltd.) is placed in a predetermined position on the lead frame exposed at the bottom of the recess of the semiconductor light emitting device package. Then, the silicone die bond material is cured at 100 ° C. for 1 hour and further at 150 ° C. for 2 hours, and the semiconductor light emitting element is mounted on the package for the semiconductor light emitting device. The manual wire bonder is an MBIO manufactured by AVIO. -2200, the lead frame of the semiconductor light emitting device package and the semiconductor by the gold wire The body light emitting element was connected.

  In wire bonding, a ball is formed by discharge at the tip of a 25 μm diameter gold wire previously passed through a capillary, the ball portion is lowered onto the external electrode of the semiconductor light emitting element by the capillary, and the first bonding is performed by a thermosonic method. The process was performed. Next, while guiding the gold wire with a capillary, the lead wire was transferred from the bottom surface of the recess to the exposed lead frame. Subsequently, the capillary was lowered onto the exposed lead frame, the gold wire was pressed onto the exposed lead frame, and the gold wire was fixed by a thermosonic method (second bonding step) and cut. The conditions of heating, pressure bonding, and ultrasonic strength in the thermosonic method are as follows: the table temperature is 170 ° C., the load during the first bonding process is 65 g, the ultrasonic application time is 65 ms, and the load during the second bonding process is 80 g. The ultrasonic wave application time was 75 ms.

  Through the steps as described above, 300 semiconductor light emitting devices are manufactured for each of various samples, and the semiconductor light emitting elements placed on the exposed lead frame (that is, the exposed lead frame 32c) by actual microscope observation are manufactured. The presence or absence of peeling of the gold wire at the external electrode (that is, the connection point between the external electrode of the semiconductor light emitting element, the lead frame, and the gold wire in the first bonding) was confirmed, and the peeling probability was determined.

  The gold wire was not peeled off at the connection point between the lead frame and the gold wire in Example 1. This is because an extended lead portion is provided at a portion of the lead frame where wire bonding is performed, and the exposed lead portion, which is a portion of the lead frame where wire bonding is performed, supports the load at two points, the external lead portion and the extended lead portion. This is considered to be because the ultrasonic waves can be efficiently transmitted without causing bending during crimping.

  On the other hand, peeling of the gold wire was confirmed at the connection point between the lead frame and the gold wire of Comparative Example 1. The occurrence probability of the peeling was about 1% (3 out of 300). This is because the resin molded body constituting the frame for the semiconductor light emitting device has rubber elasticity, and the lead frame (exposed lead portion) to be bonded is bent by the load of the capillary, so that ultrasonic waves are scattered and the lead frame This is probably because the connection point between the wire and the gold wire is not sufficiently overheated.

  In addition, we were able to find the conditions for separate stable mounting by increasing the pressure and ultrasonic strength, but it was observed that the lead frame was bent by the load of each semiconductor light emitting element during capillary lowering and pressure bonding. . For this reason, it was found that when a high-speed auto bonder was used when manufacturing Comparative Example 1, the semiconductor light emitting element might be peeled off from the lead frame.

  From the above, the semiconductor light emitting device packages of Example 1 and Example 2 having a structure in which the lead frame includes the extended lead portion have high heat dissipation characteristics, and can provide a high-luminance semiconductor light emitting device. . In particular, when the resin molding has rubber elasticity, the lead frame bend structure and branch structure improve the mechanical strength of the package for the semiconductor light emitting device, and the lead frame can be peeled off even if stress or thermal shock is applied. In addition, deformation and breakage of the package for the semiconductor light emitting device can be suppressed. Furthermore, there is little peeling at the time of wire bonding, and the semiconductor light emitting device can be mounted with a high yield.

  By injection molding a semiconductor light emitting device package having such a lead frame, high productivity of the semiconductor light emitting device package can be ensured. Furthermore, since the liquid injection molding has a good resin flow, the package for a semiconductor light emitting device of the present invention can be suitably manufactured by using a lead frame having a bent structure.

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Resin molding 3a 1st lead frame 3b 2nd lead frame 4 Sealing material 5 Semiconductor light emitting element 6 Bonding wire 7 Package for semiconductor light-emitting devices 8 Recessed part 11a 1st exposed lead part 11b 2nd exposed lead part 12a First external lead portion 12b Second external lead portion 13a First connection lead portion 13b Second connection lead portion 14a First extension lead portion

Claims (11)

Resin molding molded integrally with the first lead frame and the second lead frame while partially covering the first lead frame, the second lead frame, and the first lead frame and the second lead frame A package for a semiconductor light-emitting device that is mounted on a mounting substrate via the first lead frame and the second lead frame,
The resin molded body includes a recess for mounting a semiconductor light emitting element on the first surface, the resin molded body contains polyorganosiloxane, and the bifunctional silicon content of the resin molded body is 5% by weight or more. 12 wt% or less,
The first lead frame includes a first exposed lead portion exposed on a bottom surface of the concave portion, a first external lead portion positioned outside the resin molded body, one end of the first exposed lead portion, and the first outer portion. A first connecting lead portion connecting the lead portion, and a first extending lead extending from the other end of the first exposed lead portion toward a second surface facing the first surface and exposed from the second surface And comprising
The second lead frame includes a second exposed lead portion exposed from the bottom surface of the recess, a second external lead portion positioned outside the resin molded body, one end of the second exposed lead portion, and the second external portion. A second connecting lead portion for connecting the lead portion,
Each of the first external lead portion, the second external lead portion, and the first extending lead portion is disposed at a position where at least a part thereof is in contact with the surface of the mounting substrate during the mounting. A package for a semiconductor light emitting device.   The resin molded body contains a white pigment having an aspect ratio of primary particles of 1.2 or more and 4.0 or less and a primary particle diameter of 0.1 µm or more and 2.0 µm or less. Item 2. A package for a semiconductor light-emitting device according to Item 1.   The first external lead portion and the second external lead portion are exposed from the second surface, and extend toward the outside of the resin molded body and along the second surface. Or the package for semiconductor light-emitting devices of Claim 2.   The exposed portion of the first external lead portion, the second external lead portion, and the first extended lead portion is provided on the same plane as the second surface. Package for semiconductor light emitting devices.   The second lead frame includes a second extending lead portion that extends from the other end of the second exposed lead portion toward a second surface facing the first surface and is exposed from the second surface. The package for a semiconductor light-emitting device according to any one of claims 1 to 4.   In the first lead frame, the first connection lead portion is branched, and the first exposure lead portion is independently connected to each of branch destinations of the first connection lead portion. The package for a semiconductor light-emitting device according to claim 1, wherein the first extension lead portion is connected to at least one of the first and second leads.   In the second lead frame, the second connecting lead portion is branched, and the second exposed lead portion is independently connected to each of branch destinations of the second connecting lead portion. The package for a semiconductor light emitting device according to claim 6, wherein the second extending lead portion is connected to at least one of the first and second leads.   The first lead frame and the second lead frame are engaged with each other while being spaced apart from each other when the first lead frame and the second lead frame are projected onto the second surface. The package for semiconductor light-emitting devices of 5 or 6.   Each of the first lead frame and the second lead frame is formed by bending one lead frame, and a part of the first lead frame and the second lead frame are covered with the resin molding while maintaining the bent shape. The package for a semiconductor light-emitting device according to any one of claims 1 to 8.   The package for a semiconductor light-emitting device according to claim 1, wherein the resin molding is molded by liquid injection molding.   A semiconductor light-emitting device comprising the package for a semiconductor light-emitting device according to claim 1.

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