JP2012216084A - Information input device - Google Patents

Abstract

An information input device with excellent visibility is provided.
An information input device includes an optical layer having a surface, a plurality of first electrodes formed on the surface, and a plurality of second electrodes formed to intersect the first electrode on the surface. And a transparent insulating layer interposed at an intersection where the first electrode and the second electrode intersect. The surface of the optical layer is a wavefront having an average wavelength equal to or less than the wavelength of visible light. The average wavelength of the wavefront is λm, the average width of vibration of the wavefront is Am, and the ratio (Am / λm) is 0. It is in the range of 2 or more and 1.0 or less.
[Selection] Figure 1

Description

  The present technology relates to an information input device. Specifically, the present invention relates to an information input device having a first electrode and a second electrode formed on the surface of an optical layer so as to cross each other.

  In recent years, an increasing number of cases where a touch panel (input device) is mounted on a mobile device such as a mobile phone or a portable music terminal. The touch panel is an input device for detecting a position where a contact is made with a finger or a pen. Such a touch panel includes a resistance film type and a capacitance type, but the capacitance type is very often used for mobile devices.

  In a capacitive touch panel, for example, an electrode pattern is extended in a direction intersecting each other, and when a finger or the like touches or approaches, the capacitance between the electrodes changes to detect the input position. There are types (see, for example, Patent Document 1).

JP 2003-173238 A

  However, in the above-described prior art, since two transparent conductive films are used, internal reflection increases, and visibility decreases. Moreover, an electrode pattern will be visually recognized by the difference in the optical characteristic of the part in which the electrode pattern is formed, and the part in which it is not formed.

  Therefore, the objective of this technique is to provide the information input device excellent in visibility.

In order to solve the above problems, the present technology
An optical layer having a surface;
A plurality of first electrodes formed on the surface;
A plurality of second electrodes formed on the surface so as to intersect the first electrodes;
A transparent insulating layer interposed at an intersection where the first electrode and the second electrode intersect,
The surface of the optical layer is a wavefront having an average wavelength equal to or less than the wavelength of visible light,
The information input device has a ratio (Am / λm) in the range of 0.2 to 1.0, where λm is the average wavelength of the wavefront and Am is the average width of vibration of the wavefront.

  In the present technology, the wavefront of the optical layer is preferably formed by arranging a plurality of structures on the substrate surface. It is preferable that the structure has a convex shape or a concave shape and is arranged in a predetermined lattice shape. As the lattice shape, a tetragonal lattice shape or a quasi-tetragonal lattice shape, or a hexagonal lattice shape or a quasi-hexagonal lattice shape is preferably used.

  In the present technology, the arrangement pitch P1 of the structures in the same track is preferably longer than the arrangement pitch P2 of the structures between two adjacent tracks. By doing in this way, since the filling rate of the structure which has an elliptical cone or an elliptical truncated cone shape can be improved, an optical adjustment function can be improved.

  In the present technology, when each structure forms a hexagonal lattice pattern or a quasi-hexagonal lattice pattern on the substrate surface, the arrangement pitch of the structures in the same track is P1, and the structure between two adjacent tracks When the body arrangement pitch is P2, it is preferable that the ratio P1 / P2 satisfies a relationship of 1.00 ≦ P1 / P2 ≦ 1.1 or 1.00 <P1 / P2 ≦ 1.1. By setting the numerical value in such a range, the filling rate of the structures having an elliptical cone or an elliptical truncated cone shape can be improved, so that the optical adjustment function can be improved.

  In the present technology, when each structure forms a hexagonal lattice pattern or a quasi-hexagonal lattice pattern on the substrate surface, each structure has a major axis direction in the track extending direction, and a central portion. It is preferable that the inclination is an elliptical cone or an elliptical truncated cone shape that is formed steeper than the inclination of the tip and the bottom. By adopting such a shape, the optical adjustment function can be improved.

  In the present technology, when each structure forms a hexagonal lattice pattern or a quasi-hexagonal lattice pattern on the substrate surface, the height or depth of the structure in the track extending direction is the track column direction. Is preferably smaller than the height or depth of the structure. If this relationship is not satisfied, it is necessary to increase the arrangement pitch in the track extending direction, and the filling rate of the structures in the track extending direction decreases. Thus, when the filling rate is lowered, the optical adjustment function is lowered.

  In the present technology, when the structure forms a tetragonal lattice pattern or a quasi-tetragonal lattice pattern on the surface of the substrate, the arrangement pitch P1 of the structures in the same track is equal to the structure pitch between two adjacent tracks. It is preferable that it is longer than the arrangement pitch P2. By doing in this way, since the filling rate of the structure which has an elliptical cone or an elliptical truncated cone shape can be improved, an optical adjustment function can be improved.

  When the structure forms a tetragonal lattice pattern or a quasi-tetragonal lattice pattern on the substrate surface, the arrangement pitch of the structures within the same track is P1, and the arrangement pitch of the structures between two adjacent tracks is P2. , It is preferable that the ratio P1 / P2 satisfies the relationship of 1.4 <P1 / P2 ≦ 1.5. By setting the numerical value in such a range, the filling rate of the structures having an elliptical cone or an elliptical truncated cone shape can be improved, so that the optical adjustment function can be improved.

  When the structure forms a tetragonal lattice pattern or a quasi-tetragonal lattice pattern on the substrate surface, each structure has a major axis direction in the track extending direction, and the inclination of the central portion is the tip portion and It is preferably an elliptical cone or elliptical truncated cone shape formed steeper than the bottom slope. By adopting such a shape, the optical adjustment function can be improved.

  When the structure forms a tetragonal lattice pattern or a quasi-tetragonal lattice pattern on the substrate surface, the height or depth of the structure in the direction of 45 degrees or about 45 degrees with respect to the track is the row of tracks. It is preferably smaller than the height or depth of the structure in the direction. If this relationship is not satisfied, it is necessary to increase the arrangement pitch in the 45-degree direction or about 45 degrees direction with respect to the track. The filling rate decreases. Thus, when the filling rate is lowered, the optical adjustment function is lowered.

  In the present technology, it is preferable that a large number of structures provided on the surface of the substrate with a fine pitch form a plurality of rows of tracks and form a lattice pattern between three adjacent rows of tracks. As the lattice pattern, it is preferable to use at least one of a hexagonal lattice pattern, a quasi-hexagonal lattice pattern, a tetragonal lattice pattern, and a quasi-tetragonal lattice pattern. Thereby, the packing density of the structures on the surface can be increased. Therefore, an information input device with an improved optical adjustment function can be obtained.

  In the present technology, it is preferable to produce the optical layer by using a method in which an optical disc master production process and an etching process are combined. The master for producing the optical layer can be efficiently manufactured in a short time and can cope with an increase in the size of the information input device, whereby the productivity of the information input device can be improved.

  In the present technology, since the first electrode and the second electrode are formed on the same surface of the optical layer, the number of optical layers can be reduced. Therefore, it is possible to reduce internal reflection and suppress visibility degradation.

  In the present technology, the first electrode and the second electrode are formed on the wavefront having an average wavelength equal to or smaller than the wavelength of visible light, and the ratio of the average wavelength λm of the wavefront to the average width Am of the vibration of the wavefront (Am / λm) is in the range of 0.2 to 1.0. Therefore, it is possible to obtain an optical adjustment function with less visibility and excellent visibility. Therefore, the visual recognition of the first electrode and the second electrode can be suppressed. Here, the optical adjustment function refers to an optical adjustment function of transmission characteristics and / or reflection characteristics.

  As described above, according to the present technology, it is possible to improve the visibility of the information input device.

FIG. 1A is a schematic plan view illustrating an example of the configuration of the information input device according to the first embodiment of the present technology. FIG. 1B is a schematic cross-sectional view taken along the line AA shown in FIG. 1A. FIG. 2A is a perspective view showing an example of the surface shape of the optical layer. 2B is a cross-sectional view taken along line AA shown in FIG. 2A. FIG. 2C is a plan view showing an example of an array of a plurality of structures formed on the surface of the optical layer. FIG. 3 is a schematic diagram for explaining a method of setting the bottom surface of the structure when the boundary of the structure is unclear. 4A is an enlarged plan view showing the vicinity of the intersection C shown in FIG. 1A. FIG. 4B is a cross-sectional view taken along line AA shown in FIG. 4A. FIG. 5A is a schematic plan view illustrating a first example of an electrode pattern of the information input device according to the first embodiment of the present technology. FIG. 5B is a schematic plan view illustrating a second example of the electrode pattern of the information input device according to the first embodiment of the present technology. FIG. 6A is a schematic plan view illustrating a third example of the electrode pattern of the information input device according to the first embodiment of the present technology. FIG. 6B is a schematic plan view illustrating a fourth example of the electrode pattern of the information input device according to the first embodiment of the present technology. FIG. 7A is a schematic diagram illustrating a first configuration example of the first connecting portion. FIG. 7B is a schematic diagram illustrating a second configuration example of the first connecting portion. FIG. 7C is a schematic diagram illustrating a third configuration example of the first connecting portion. FIG. 8A is a schematic diagram illustrating a first shape example of a transparent insulating layer. FIG. 8B is a schematic diagram illustrating a second shape example of the transparent insulating layer. FIG. 8C is a schematic diagram illustrating a third shape example of the transparent insulating layer. FIG. 8D is a schematic diagram illustrating a fourth shape example of the transparent insulating layer. FIG. 9A is a schematic diagram illustrating a fifth shape example of the transparent insulating layer. FIG. 9B is a schematic diagram illustrating a sixth shape example of the transparent insulating layer. FIG. 9C is a schematic diagram illustrating a seventh shape example of the transparent insulating layer. FIG. 9D is a schematic diagram illustrating an eighth shape example of the transparent insulating layer. FIG. 10A is an enlarged cross-sectional view of the region R ₁ shown in FIG. 4B. FIG. 10B is an enlarged cross-sectional view of the region R ₂ shown in FIG. 4B. FIG. 11A is an enlarged cross-sectional view for explaining an example of the surface shape of the first electrode. FIG. 11B is an enlarged cross-sectional view for explaining the film thickness of the first electrode. FIG. 12A is a perspective view illustrating an example of a configuration of a roll master. 12B is an enlarged plan view showing a part of the roll master shown in FIG. 12A. 12C is a cross-sectional view taken along track T in FIG. 12B. FIG. 13 is a schematic diagram showing an example of the configuration of a roll master exposure apparatus. 14A to 14D are process diagrams for explaining an example of a method for manufacturing the information input device according to the first embodiment of the present technology. 15A to 14C are process diagrams for explaining an example of a method for manufacturing the information input device according to the first embodiment of the present technology. 16A to 16D are process diagrams for explaining an example of a method for manufacturing the information input device according to the first embodiment of the present technology. FIG. 17 is a plan view illustrating an example of the surface shape of the optical layer of the information input device according to the second embodiment of the present technology. FIG. 18A is a plan view illustrating an example of the surface shape of the optical layer of the information input device according to the third embodiment of the present technology. FIG. 18B is a cross-sectional view illustrating an example of the surface shape of the optical layer of the information input device according to the third embodiment of the present technology. FIG. 19 is a cross-sectional view illustrating an example of the configuration of the information input device according to the fourth embodiment of the present technology. FIG. 20A is a plan view showing a plurality of structures arranged on the substrate surface of Samples 1-1 to 1-3. FIG. 20B is a graph showing the reflection spectra of the transparent conductive elements of Samples 1-1 to 1-3. FIG. 21 is a graph showing the measurement results of the transmission spectra of the transparent conductive elements of Samples 2-1 to 2-3. FIG. 22A is a graph showing the reflection spectra of the transparent conductive elements of Samples 3-1 to 3-3. FIG. 22B is a graph showing a transmission spectrum of the transparent conductive elements of Samples 3-1 to 3-3. FIG. 23 is a graph showing the reflection spectra of the transparent conductive elements of Samples 4-1 to 4-4. FIG. 24 is a graph showing a difference ΔR in reflectance between the transparent conductive elements of Samples 6-1, 6-2 and Samples 6-3, 6-4. FIG. 25A is a graph showing the reflection spectrum of the transparent conductive element of Sample 7-1. FIG. 25B is a graph showing the reflection spectrum of the transparent conductive element of Sample 7-2. FIG. 25C is a graph showing the reflection spectrum of the transparent conductive element of Sample 7-3. FIG. 26A is a cross-sectional view showing the thicknesses D1, D2, and D3 of the transparent conductive layer of Sample 7-2. FIG. 26B is a cross-sectional view showing the thicknesses D1, D2, and D3 of the transparent conductive layer of Sample 7-3. FIG. 27 is a graph showing the measurement results of the surface resistance values of the transparent conductive sheets of Samples 9-1 to 10-5.

Embodiments of the present technology will be described in the following order with reference to the drawings. In all the drawings of the following embodiments, the same or corresponding parts are denoted by the same reference numerals.
(1) First embodiment (an example of an information input device in which an electrode pattern is formed on the wavefront of an optical layer)
(1-1) Schematic configuration of information input device (1-2) Components of information input device (1-2-1) First optical layer (1-2-2) Second optical layer (1-2 -3) First electrode and second electrode (1-2-4) Shape of electrode (1-3) Optical characteristics (1-4) Configuration of roll master (1-5) Configuration of exposure apparatus (1- 6) Information input device manufacturing method (2) Second embodiment (an example of an information input device in which a wavefront is formed by arranging a plurality of structures in a (quasi) tetragonal lattice)
(3) Third embodiment (an example of an information input device in which a wavefront is formed by randomly arranging a plurality of structures)
(4) Fourth embodiment (an example of an information input device in which the electrode surface side is opposed to the display surface of the display device)
(5) Configuration of this technology

(1) First Embodiment (1-1) Schematic Configuration of Information Input Device FIG. 1A is a schematic plan view illustrating an example of a configuration of an information input device according to a first embodiment of the present technology. FIG. 1B is a schematic cross-sectional view taken along the line AA shown in FIG. 1A. The information input device 1 is a so-called projected capacitive touch panel, and has an optical layer (first optical layer) 2 having a surface and the same surface of the optical layer 2 as shown in FIGS. 1A and 1B. A plurality of first electrodes 3 and a plurality of second electrodes 4 formed, and a transparent insulating layer 5 interposed between the first electrodes 3 and the second electrodes 4 are provided. The surface of the optical layer 2 has a wavefront, and the first electrode 3 and the second electrode 4 are formed so as to follow the wavefront. Further, as shown in FIG. 1B, an optical layer (first optical layer) 6 is further provided on the surface of the optical layer 2 on which the first electrode 3 and the second electrode 4 are formed as necessary. May be. The optical layer 6 includes a bonding layer 7 and a substrate 8, and the substrate 8 is bonded to the surface of the optical layer 2 via the bonding layer 7. The information input device 1 is suitable for application to a display surface of a display device. For example, the optical layer 2 and the optical layer 6 are transparent to visible light, and the refractive index n is preferably in the range of 1.2 to 1.7. Hereinafter, two directions orthogonal to each other within the surface of the information input device 1 are referred to as an X-axis direction and a Y-axis direction, respectively, and a direction perpendicular to the surface is referred to as a Z-axis direction.

  The first electrode 3 extends in the X-axis direction (first direction) on the surface of the optical layer 2, while the second electrode 4 extends in the Y-axis direction (first direction on the surface of the optical layer 2. 2 direction). Therefore, the first electrode 3 and the second electrode 4 intersect so as to be orthogonal. At the intersection C where the first electrode 3 and the second electrode 4 intersect, a transparent insulating layer 5 for insulating the two electrodes is interposed. An extraction electrode 11 is electrically connected to one end of each of the first electrode 3 and the second electrode 4, and the extraction electrode 11 and a drive circuit (not shown) are connected via an FPC (Flexible Printed Circuit) 12. It is connected.

(1-2) Component of information input device (1-2-1) First optical layer (surface shape of first optical layer)
FIG. 2A is a perspective view showing an example of the surface shape of the optical layer. As shown in FIG. 2A, the optical layer 2 has a wave surface Sw on one principal surface. The ratio of the average width Am of vibration of the wavefront Sw to the average wavelength λm of the wavefront Sw (Am / λm) is preferably in the range of 0.2 to 1.0, more preferably 0.3 to 0.8. is there. If the ratio (Am / λm) is less than 0.2, the optical adjustment function by the wavefront Sw tends to be lowered. On the other hand, when the ratio (Am / λm) exceeds 1.0, the electrical reliability tends to decrease.

  The average wavelength λm of the wave surface Sw is preferably equal to or less than the wavelength band of light intended for the optical adjustment function. The wavelength band of light for the purpose of the optical adjustment function is, for example, the wavelength band of ultraviolet light, the wavelength band of visible light, or the wavelength band of infrared light. Here, the wavelength band of ultraviolet light means a wavelength band of 10 nm to 360 nm, the wavelength band of visible light means a wavelength band of 360 nm to 830 nm, and the wavelength band of infrared light means a wavelength band of 830 nm to 1 mm. Specifically, the average wavelength λm of the wavefront Sw is preferably in the range of 140 nm to 300 nm, more preferably 150 nm to 270 nm. When the average wavelength λm of the wave surface Sw is less than 140 nm, the electrical characteristics tend to deteriorate. On the other hand, when the average wavelength λm of the wave surface Sw exceeds 300 nm, the visibility tends to deteriorate.

  The average width Am of vibration of the wavefront Sw is preferably in the range of 28 nm to 300 nm, more preferably 50 nm to 240 nm, and still more preferably 80 nm to 240 nm. When the average width Am of the vibration of the wave surface Sw is less than 28 nm, the optical adjustment function tends to deteriorate. On the other hand, when the average width Am of the vibration of the wavefront Sw exceeds 300 nm, the electrical characteristics tend to deteriorate.

  Here, the average wavelength λm of the wavefront Sw, the average width Am of vibration, and the ratio (Am / λm) are obtained as follows. First, the information input device 1 is cut in one direction so as to include a position where the vibration width of the wavefront Sw is maximized, and a cross section thereof is photographed with a transmission electron microscope (TEM). Next, the wavelength λ and the vibration width A of the wavefront Sw are obtained from the photographed TEM photograph. This measurement is repeated at 10 points randomly selected from the information input device 1, and the measured values are simply averaged (arithmetic average) to obtain the average wavelength λm of the wavefront Sw and the average width Am of vibration. Next, the ratio (Am / λm) is obtained using the average wavelength λm and the average width Am of vibration.

  The average angle of the slope of the wave front Sw is preferably 60 ° or less, more preferably 30 ° or more and 60 ° or less. If the average angle is less than 30 °, the electrical reliability due to the wavefront Sw tends to be reduced. On the other hand, if the average angle exceeds 60 °, the electrical reliability tends to decrease. On the other hand, when the average angle exceeds 60 °, the etching resistance of the transparent conductive layer in producing the first electrode 3 and the second electrode 4 tends to decrease.

(Configuration of the first optical layer)
2B is a cross-sectional view taken along line AA shown in FIG. 2A. As shown in FIG. 2B, the optical layer 2 includes, for example, a base 21 and a plurality of structures 23 formed on the surface of the base 21. The plurality of structures 23 are arranged in a plurality of rows. The wavefront Sw is formed by a plurality of structures 23 arranged in this way. The structure 23 has, for example, a convex shape or a concave shape with respect to the surface of the base body 21. 2A and 2B show an example in which the structure 23 has a convex shape with respect to the surface of the base 21. FIG. The structure 23 and the base body 21 are formed separately or integrally, for example. When the structure 23 and the base body 21 are separately formed, a base layer 22 may be further provided between the structure body 23 and the base body 21 as necessary. The base layer 22 is a layer that is integrally formed with the structure 23 on the bottom surface side of the structure 23, and is formed by curing the same energy ray-curable resin composition as the structure 23.

(Substrate)
The base 21 is a transparent base having transparency, for example. Examples of the material of the base 21 include, but are not limited to, a plastic material having transparency and a material mainly composed of glass.

  Examples of the glass include soda lime glass, lead glass, hard glass, quartz glass, and liquid crystallized glass (see “Chemical Handbook”, Basic Edition, P.I-537, The Chemical Society of Japan). Plastic materials include polymethyl methacrylate, methyl methacrylate and other alkyls (from the viewpoint of optical properties such as transparency, refractive index, and dispersion, as well as various properties such as impact resistance, heat resistance, and durability. (Meth) acrylic resins such as copolymers with vinyl monomers such as (meth) acrylate and styrene; polycarbonate resins such as polycarbonate and diethylene glycol bisallyl carbonate (CR-39); (brominated) bisphenol A type di ( Thermosetting (meth) acrylic resins such as homopolymers or copolymers of (meth) acrylates, polymers and copolymers of urethane-modified monomers of (brominated) bisphenol A mono (meth) acrylate; polyesters, especially polyethylene terephthalate , Polyethylene naphtha And unsaturated polyester, acrylonitrile-styrene copolymer, polyvinyl chloride, polyurethane, epoxy resin, polyarylate, polyethersulfone, polyetherketone, cycloolefin polymer (trade name: Arton, Zeonore), cycloolefin copolymer, etc. Is preferred. In addition, an aramid resin considering heat resistance can be used. Here, (meth) acrylate means acrylate or methacrylate.

  When a plastic material is used as the substrate 21, an undercoat layer may be provided as a surface treatment in order to further improve the surface energy, coatability, slipperiness, flatness and the like of the plastic surface. Examples of the undercoat layer include organoalkoxy metal compounds, polyesters, acrylic-modified polyesters, polyurethanes, and the like. Further, in order to obtain the same effect as that of providing the undercoat layer, the surface of the substrate 21 may be subjected to corona discharge and UV irradiation treatment.

  In the case where the substrate 21 is a plastic film, the substrate 21 can be obtained by, for example, a method of stretching the above-described resin or forming a film after being diluted with a solvent and drying. Further, the thickness of the base 21 is preferably selected as appropriate according to the application of the information input device 1 and is, for example, about 25 μm to 500 μm.

  Examples of the shape of the base 21 include a sheet shape, a plate shape, and a block shape, but are not particularly limited to these shapes. Here, the sheet is defined as including a film.

(Structure)
FIG. 2C is a plan view showing an example of an array of a plurality of structures formed on the surface of the optical layer. As shown in FIG. 2C, the plurality of structures 23 are two-dimensionally arranged on the surface of the base 21. It is preferable that the structures 23 are periodically two-dimensionally arranged with a short average arrangement pitch equal to or less than the wavelength band of light for the purpose of reducing reflection or improving transmission.

  The plurality of structures 23 have an arrangement form that forms a plurality of rows of tracks T1, T2, T3,... (Hereinafter collectively referred to as “tracks T”) on the surface of the base 21. In the present technology, the track refers to a portion where the structures 23 are connected in a row. As the shape of the track T, a linear shape, an arc shape, or the like can be used, and the track T having these shapes may be wobbled (meandered). By wobbling the track T in this way, occurrence of unevenness in appearance can be suppressed.

  When wobbling the track T, it is preferable that the wobbles of the tracks T on the base 21 are synchronized. That is, the wobble is preferably a synchronized wobble. By synchronizing the wobbles in this way, the unit lattice shape of a hexagonal lattice or a quasi-hexagonal lattice can be maintained and the filling rate can be kept high. Examples of the waveform of the wobbled track T include a sine wave and a triangular wave. The waveform of the wobbled track T is not limited to a periodic waveform, and may be a non-periodic waveform. The wobble amplitude of the wobbled track T is selected to be about ± 10 nm, for example.

  The structure 23 is disposed at a position shifted by a half pitch between two adjacent tracks T, for example. Specifically, between two adjacent tracks T, the structure of the other track (eg, T2) is positioned at an intermediate position (position shifted by a half pitch) of the structure 23 arranged on one track (eg, T1). 23 is arranged. As a result, as shown in FIG. 3B, a hexagonal lattice pattern or a quasi-hexagonal lattice pattern in which the center of the structure 23 is located at each point of a1 to a7 between adjacent three rows of tracks (T1 to T3) is formed. The structure body 23 is arranged in the upper part.

  Here, the hexagonal lattice means a regular hexagonal lattice. The quasi-hexagonal lattice means a distorted regular hexagonal lattice unlike a regular hexagonal lattice. For example, when the structures 23 are arranged on a straight line, the quasi-hexagonal lattice means a hexagonal lattice obtained by stretching a regular hexagonal lattice in the linear arrangement direction (track direction). . When the structures 23 are arranged in an arc shape, the quasi-hexagonal lattice means a hexagonal lattice obtained by distorting a regular hexagonal lattice in an arc shape, or a regular hexagonal lattice in the arrangement direction (track direction). A hexagonal lattice stretched and distorted and distorted in an arc shape. When the structures 23 are arranged in a meandering manner, the quasi-hexagonal lattice means a hexagonal lattice obtained by distorting a regular hexagonal lattice by the meandering arrangement of the structures 23, or a regular hexagonal lattice in the arrangement direction ( A hexagonal lattice that is stretched and distorted in the track direction) and is distorted by the meandering arrangement of the structures 23.

  When the structures 23 are arranged so as to form a quasi-hexagonal lattice pattern, as shown in FIG. 2C, the arrangement pitch P1 (for example, the distance between a1 and a2) of the structures 23 in the same track (for example, T1). ) Is an arrangement pitch of the structures 23 between two adjacent tracks (for example, T1 and T2), that is, an arrangement pitch P2 (for example, a1 to a7, a2) of the structures 23 in the ± θ direction with respect to the track extending direction. It is preferable that it is longer than the distance between a7). By arranging the structures 23 in this way, the packing density of the structures 23 can be further improved.

  Specific shapes of the structure 23 include, for example, a cone shape, a column shape, a needle shape, a hemisphere shape, a semi-ellipsoid shape, a polygonal shape, and the like, but are not limited to these shapes, Other shapes may be employed. Examples of the cone shape include a cone shape with a sharp top, a cone shape with a flat top, and a cone shape with a convex or concave curved surface at the top, from the viewpoint of electrical reliability, A cone shape having a convex curved surface at the top is preferable, but it is not limited to these shapes. Examples of the cone shape having a convex curved surface at the top include a quadric surface shape such as a parabolic shape. Further, the cone-shaped cone surface may be curved concavely or convexly. When a roll master is manufactured using a roll master exposure apparatus (see FIG. 13) described later, the structure 23 has an elliptical cone shape having a convex curved surface at the top, or an elliptical frustum with a flat top. It is preferable to adopt the shape and make the major axis direction of the ellipse forming the bottom surface thereof coincide with the extending direction of the track T. Here, the shapes of ellipses, spheres, ellipsoids, etc. are not only mathematically defined shapes such as complete ellipses, spheres, ellipsoids, but also ellipses, spheres, ellipsoids, etc. with some distortion. The shape is also included.

  From the viewpoint of improving the optical adjustment function, a cone shape having a gentle top slope and a gradually steep slope from the center to the bottom is preferable. Further, from the viewpoint of improving the optical adjustment function of the reflection characteristics and the transmission characteristics, it is preferable that the central portion has a conical shape with a steep slope from the bottom and the top, or a conical shape with a flat top. When the structure 23 has an elliptical cone shape or an elliptical truncated cone shape, the major axis direction of the bottom surface thereof is preferably parallel to the track extending direction.

  It is preferable that the structure body 23 has a curved surface portion 23b whose height gradually decreases from the top portion toward the lower portion at the peripheral edge portion of the bottom portion thereof. This is because the optical layer 2 can be easily peeled off from the master or the like in the manufacturing process of the information input device 1. In addition, although the curved surface part 23b may be provided only in a part of the peripheral part of the structure 23, it is preferable to provide in the whole peripheral part of the structure 23 from a viewpoint of the said peeling characteristic improvement.

  Protruding portions 23 a are preferably provided on part or all of the periphery of the structure 23. This is because the reflectance can be kept low even when the filling rate of the structures 23 is low. The protrusion 23a is preferably provided between the adjacent structures 23 from the viewpoint of ease of molding. Further, a part or all of the surface around the structure 23 may be roughened to form fine irregularities. Specifically, for example, the surface between adjacent structures 23 may be roughened to form fine irregularities. Moreover, you may make it form a micro hole in the surface of the structure 23, for example, a top part.

  2A to 2C, each structure 23 has the same size, shape, and height. However, the shape of the structure 23 is not limited to this, and 2 on the substrate surface. A structure 23 having a size, shape, and height greater than or equal to that of the seed may be formed.

  The height H1 of the structures 23 in the track extending direction is preferably smaller than the height H2 of the structures 23 in the column direction. That is, it is preferable that the heights H1 and H2 of the structure 23 satisfy the relationship of H1 <H2. If the structures 23 are arranged so as to satisfy the relationship of H1 ≧ H2, it is necessary to increase the arrangement pitch P1 in the track extending direction, so that the filling rate of the structures 23 in the track extending direction decreases. is there. Thus, when the filling rate is lowered, the optical adjustment function is lowered.

  The aspect ratios of the structures 23 are not limited to the same, and each structure 23 may be configured to have a certain height distribution. By providing the structure 23 having a height distribution, the wavelength dependency of the optical adjustment function can be reduced. Therefore, the information input device 1 having an excellent optical adjustment function can be realized.

  Here, the height distribution means that the structures 23 having two or more heights are provided on the surface of the base 21. For example, a structure 23 having a reference height and a structure 23 having a height different from the structure 23 may be provided on the surface of the base 21. In this case, the structures 23 having a height different from the reference are provided, for example, periodically or non-periodically (randomly) on the surface of the base 21. Examples of the direction of the periodicity include a track extending direction and a column direction.

  The average arrangement pitch Pm, average height Hm, and aspect ratio (average height or average depth Hm / average arrangement pitch Pm) of the structures 23 are respectively the average wavelength λm, the average width Am of vibration, and the ratio (vibration). (Average width Am / average wavelength λm).

  When the arrangement pitch of the structures 23 in the same track is P1, and the arrangement pitch of the structures 23 between two adjacent tracks is P2, the ratio P1 / P2 is 1.00 ≦ P1 / P2 ≦ 1.1, Or it is preferable to satisfy | fill the relationship of 1.00 <P1 / P2 <= 1.1. By setting it as such a numerical value range, since the filling rate of the structure 23 which has an elliptical cone or elliptical truncated cone shape can be improved, an optical adjustment function can be improved.

The ratio R _s ((S2 / S1) × 100) of the area S2 of the flat portion to the area S1 of the wave surface Sw is preferably 0% or more and 50% or less, more preferably 0% or more and 45% or less, and further preferably 0%. It is in the range of 30% or less. The area ratio R _s by 50% or less, it is possible to improve the optical adjustment function.

Here, the ratio R _s ((S2 / S1) × 100) of the area S2 of the flat portion to the area S1 of the wave front Sw is a value obtained as follows. First, the surface of the information input device 1 is imaged with a top view using a scanning electron microscope (SEM). Next, the unit lattice Uc is selected at random from the photographed SEM photograph, and the arrangement pitch P1 and the track pitch Tp of the unit lattice Uc are measured (see FIG. 2C). Further, the area S (structure) of the bottom surface of the structure 23 located at the center of the unit cell Uc is measured by image processing. Next, using the measured arrangement pitch P1, track pitch Tp, and bottom surface area S (structure), the ratio R is obtained from the following equation.
Ratio R = [(S (lattice) −S (structure)) / S (lattice)] × 100
Unit lattice area: S (lattice) = P1 × 2 Tp
Area of bottom surface of structure existing in unit cell: S (structure) = 2S

The ratio R calculation process described above is performed for 10 unit lattices Uc randomly selected from the photographed SEM photograph. Then, the measured values are simply averaged (arithmetic average) to obtain the average rate of the ratio R, which is defined as the ratio R _s .

The ratio R _s when the structures 23 overlap or when there is a substructure such as the protrusion 23 a between the structures 23 corresponds to a height of 5% with respect to the height of the structures 23. It can be obtained by a method of determining the area ratio using a portion as a threshold value.

FIG. 3 is a diagram for explaining a method of calculating the ratio R _s when the boundary of the structure 23 is unclear. When the boundary of the structure 23 is unclear, as shown in FIG. 3, a section corresponding to 5% (= (d / h) × 100) of the height h of the structure 23 is obtained by cross-sectional SEM observation. The ratio R _s is obtained by converting the diameter of the structure 23 by the height d and converting the diameter of the structure 23. When the bottom surface of the structure 23 is an ellipse, the same processing is performed on the long axis and the short axis.

  It is preferable that the structures 23 are connected so that their lower portions overlap each other. Specifically, it is preferable that part or all of the lower portions of the adjacent structures 23 overlap each other, and it is preferable that they overlap in the track direction, the θ direction, or both directions. Thus, the filling rate of the structures 23 can be improved by overlapping the lower portions of the structures 23. It is preferable that the structures overlap with each other at a portion equal to or less than ¼ of the maximum value of the wavelength band of the light in the use environment with the optical path length considering the refractive index. This is because an excellent optical adjustment function can be obtained.

  The ratio of the diameter 2r to the arrangement pitch P1 ((2r / P1) × 100) is preferably 85% or more, more preferably 90% or more, and further preferably 95% or more. It is because the filling rate of the structures 23 can be improved and the optical adjustment function can be improved by setting the amount within such a range. If the ratio ((2r / P1) × 100) increases and the overlap of the structures 23 becomes too large, the optical adjustment function tends to decrease. Therefore, the ratio ((2r / P1) × 100) is set so that the structures are joined at a portion of the optical path length considering the refractive index and not more than ¼ of the maximum value of the wavelength band of the light in the usage environment. It is preferable to set an upper limit value. Here, the arrangement pitch P1 is the arrangement pitch in the track direction of the structures 23 as shown in FIG. 2C, and the diameter 2r is the diameter of the bottom surface of the structure in the track direction as shown in FIG. 2C. When the bottom surface of the structure is circular, the diameter 2r is a diameter, and when the bottom surface of the structure is elliptical, the diameter 2r is a long diameter.

  When the structure 23 forms a quasi-hexagonal lattice pattern, the ellipticity e of the bottom surface of the structure is preferably 100% <e <150% or less. It is because the filling rate of the structures 23 can be improved and an excellent optical adjustment function can be obtained by setting this range.

(1-2-2) Second optical layer (configuration of second optical layer)
The optical layer 6 includes, for example, a base 8 and a bonding layer 7, and the base 8 is formed on the surface of the optical layer 2 on which the first electrode 3 and the second electrode 4 are formed via the bonding layer 7. It is pasted together. The optical layer 6 is not limited to this example, and may be a ceramic coat (overcoat) such as SiO ₂ .

(Substrate)
The substrate 8 is the same as the substrate 21 of the optical layer (first optical layer) 2 described above.

(Bonding layer)
As the bonding layer 7, for example, an adhesive paste, an adhesive tape, or the like can be used. As these adhesives, for example, acrylic adhesives, rubber adhesives, silicon adhesives, and the like can be used. From the viewpoint of transparency, acrylic adhesives are preferable.

(1-2-3) First electrode and second electrode (configuration of electrodes)
4A is an enlarged plan view showing the vicinity of the intersection C shown in FIG. 1A. FIG. 4B is a cross-sectional view taken along line AA shown in FIG. 4A. As shown in FIG. 4A, the first electrode 3 includes a plurality of first pad portions (first unit electrode bodies) 3a and a plurality of first connections that connect the plurality of first pad portions 3a to each other. Part 3b. The 1st connection part 3b is extended in the X-axis direction, and connects the edge parts of the adjacent 1st pad part 3a. 4A, the second electrode 4 includes a plurality of second pad portions (second unit electrode bodies) 4a and a plurality of second connections that connect the plurality of second pad portions 4a to each other. Part 4b. The 2nd connection part 4a is extended in the Y-axis direction, and connects the edge parts of the adjacent 2nd pad part 4a.

  As shown in FIG. 4B, at the intersection C, the second connecting portion 4b, the transparent insulating layer 5, and the first connecting portion 4a are stacked on the surface of the optical layer 2 in this order. The first connecting portion 3b is formed so as to cross over the transparent insulating layer 5, and one end of the first connecting portion 3b straddling the transparent insulating layer 5 is electrically connected to one of the adjacent first pad portions 3a. And the other end of the first connecting portion 3b straddling the transparent insulating layer 5 is electrically connected to the other of the adjacent first pad portions 3a.

  The first pad portion 3a and the first connecting portion 3b are formed separately. The second pad portion 4a and the second connecting portion 4b are integrally formed. The 1st pad part 3a, the 2nd pad part 4a, and the 2nd pad part 4b consist of transparent conductive layers, for example, and the 1st connection part 3b consists of conductive layers, for example. Hereinafter, these transparent conductive layers and conductive layers will be described.

(Transparent conductive layer)
The transparent conductive layer constituting the first pad portion 3a and the second pad portion 4a has a transparent conductive material as a main component. From the viewpoint of conductivity, it is preferable to use a transparent oxide semiconductor as the transparent conductive material. As the transparent oxide semiconductor, for example, a binary compound such as SnO ₂ , InO ₂ , ZnO and CdO, a ternary element including at least one element of Sn, In, Zn and Cd which are constituent elements of the binary compound A compound or a multi-component (composite) oxide can be used. Specific examples of the transparent oxide semiconductor include, for example, indium tin oxide (ITO), zinc oxide (ZnO), aluminum-doped zinc oxide (AZO (Al ₂ O ₃ , ZnO)), SZO, and fluorine-doped tin oxide (FTO). , Tin oxide (SnO ₂ ), gallium-doped zinc oxide (GZO), indium zinc oxide (IZO (In ₂ O ₃ , ZnO)), and the like. In particular, indium tin oxide (ITO) is preferable from the viewpoints of high reliability and low resistivity. From the viewpoint of improving conductivity, the transparent oxide semiconductor is preferably in a mixed state of amorphous and polycrystalline.

  From the viewpoint of productivity, the transparent conductive material is preferably composed mainly of at least one selected from the group consisting of conductive polymers, metal nanoparticles, and carbon nanotubes. By using these materials as main components, the transparent conductive layer can be easily formed by wet coating without using an expensive vacuum apparatus or the like.

The surface resistance of the transparent conductive layer forming the first pad portion 3a and the second pad portion 4a is preferably in the range of 50Ω / □ to 4000Ω / □, more preferably 50Ω / □ to 500Ω / □. □ Within the following range. Here, the surface resistance of the transparent conductive layer is determined by four-terminal measurement (JIS K 7194). The specific resistance of the transparent conductive layer is preferably 1 × 10 ⁻³ Ω · cm or less. This is because the surface resistance range described above can be realized when it is 1 × 10 ⁻³ Ω · cm or less.

(Conductive layer)
As the conductive layer constituting the first connecting portion 3b, for example, a metal layer or a transparent conductive layer can be used. The metal layer contains a metal as a main component. As the metal, it is preferable to use a metal having high conductivity. Examples of such a material include Ag, Al, Cu, Ti, Nb, and impurity-added Si. In consideration of film-forming properties and printability, Ag is preferable. By using a metal having high conductivity as the material of the metal layer, it is preferable that the width of the first connecting portion 3b is narrowed, the thickness thereof is thinned, and the length thereof is shortened. Thereby, visibility can be improved.

  Specifically, when the first connecting portion 3a is made of a transparent conductive layer, the length L, width D, and thickness T of the first connecting portion 3a are preferably selected as follows. The length L of the 1st connection part 3a becomes like this. Preferably it is 5 mm or less, More preferably, it exists in the range of 2 mm or less. The width D of the first connecting portion 3a is preferably 500 μm or less, more preferably 200 μm or less. The thickness T of the first connecting portion 3a is preferably 10 μm or less, more preferably 5 μm or less.

  The transparent conductive layer contains a transparent conductive material as a main component. As the transparent conductive material, the same material as the first pad portion 3a, the second pad portion 4a, and the second pad portion 4b can be used. When a transparent conductive layer is used as the conductive layer, since the first connecting portion 3b is transparent, the width of the first connecting portion 3b may be made wider than when a metal layer is used as the conductive layer. Good.

  Specifically, when the first connecting portion 3a is made of a metal layer, the length L, the width D, and the thickness T of the first connecting portion 3a are preferably selected as follows. The length L of the 1st connection part 3a becomes like this. Preferably it is 5 mm or less, More preferably, it exists in the range of 2 mm or less. The width D of the first connecting portion 3a is preferably 30 μm or less, more preferably 15 μm or less. The thickness T of the first connecting portion 3a is preferably 10 μm or less, more preferably 5 μm or less.

(Pad part shape example)
5A to 6B are schematic plan views showing examples of shapes of the first pad portion and the second pad portion. As the shapes of the first pad portion 3a and the second pad portion 4a, for example, a diamond shape (FIG. 5A), a star shape (FIG. 5B), a rectangle shape (FIG. 6A), a cross shape (FIG. 6B), or the like is used. However, it is not limited to these shapes.

  FIG. 5A is a schematic plan view showing an example of a first pad portion having a diamond shape and a second pad. As shown in FIG. 5A, when the information input device 1 is viewed from the input surface side, the first pad portion 3a and the second pad portion 4a each having a rhombus are laid down and are in the closest packed state. It is preferable. Specifically, the first pad portion 3a and the second pad portion 4a having a rhombus have two sets of opposite corner portions, one corner portion faces the X-axis direction, and the other pair It is preferable that the corners of the are laid out so as to face the Y-axis direction. Thereby, the optical characteristics of the information input device 1 can be made substantially the same in the plane.

  FIG. 5B is a schematic plan view showing an example of a first pad portion and a second pad having a star shape. As shown in FIG. 5B, the star shape of the first pad portion 3a and the second pad portion 4a has two sets of opposed tip portions, and the tip portion of one set faces the X-axis direction, It is preferable that the other set is laid out so that the tip portions thereof face the Y-axis direction.

  FIG. 6A is a schematic plan view illustrating an example of a first pad portion and a second pad having a rectangular shape. As shown to FIG. 6A, the rectangle which the 1st pad part 3a and the 2nd pad part 4a have has two sets of side parts which oppose, and one side part (for example, long side part) is X. It is preferable to lay down so that the side of the other set (for example, the short side) faces the Y-axis direction.

  FIG. 6B is a schematic plan view showing an example of a first pad portion and a second pad having a cross shape. As shown in FIG. 6B, the cross shape of the first pad portion 3a and the second pad portion 4a has a pair of front end portions extending in the X-axis direction and 1 extending in the Y-axis direction. It is preferable that it is spread so that the extension part of one set faces the X-axis direction and the extension part of the other set faces the Y-axis direction.

(Example of shape of first connecting portion)
FIG. 7A is a schematic diagram illustrating an example of the shape of the first connecting portion. As shown in FIG. 7A, a rectangular shape can be adopted as the shape of the first connecting portion 3a, but the shape of the first connecting portion 3b is a shape capable of connecting adjacent first pad portions 3a to each other. As long as it is, it is not particularly limited to a rectangular shape. Examples of shapes other than the rectangular shape include a linear shape, an oval shape, a triangular shape, and an indefinite shape.

  FIG. 7B is a schematic diagram illustrating an example of the number of first connecting portions. As shown in FIG. 7B, the first pad portions 3a adjacent to each other in the X-axis direction can be connected by a plurality of first connecting portions 5a. In such a configuration, the sum (D1 + D2 +... + Dn) of the widths D1, D2,..., Dn of the plurality of first connecting portions 3a is defined as the width D of the connecting portion 3a.

  FIG. 7C is a schematic diagram illustrating an example of the structure of the first connecting portion. As shown in FIG. 7C, the structure of the first connecting portion 3a can be a mesh structure. In the case of such a structure, the portion excluding the holes forming the mesh structure is defined as the width D of the connecting portion 3a.

(1-2-4) Transparent insulating layer (transparent insulating layer)
The transparent insulating layer 5 preferably has a larger area than the portion where the first connecting portion 3b and the second connecting portion intersect. For example, the first pad portion 3a located at the intersecting portion C and It has a size enough to cover the tip of the second pad portion 4a.

  The transparent insulating layer 5 contains a transparent insulating material as a main component. As the transparent insulating material, it is preferable to use a polymer material having transparency, and examples of such a material include vinyl monomers such as polymethyl methacrylate, methyl methacrylate and other alkyl (meth) acrylates, and styrene. (Meth) acrylic resins such as copolymers; polycarbonate resins such as polycarbonate and diethylene glycol bisallyl carbonate (CR-39); homopolymers or copolymers of (brominated) bisphenol A type di (meth) acrylates Thermosetting (meth) acrylic resins such as polymers and copolymers of urethane modified monomers of (brominated) bisphenol A mono (meth) acrylate; polyesters, especially polyethylene terephthalate, polyethylene naphthalate and unsaturated polyester , Acrylonitrile - styrene copolymers, polyvinyl chloride, polyurethane, epoxy resins, polyarylate, polyether sulfone, polyether ketone, cycloolefin polymer (trade name: ARTON, ZEONOR), and the like cycloolefin copolymer. It is also possible to use an aramid resin in consideration of heat resistance. Here, (meth) acrylate means acrylate or methacrylate.

The volume resistivity of the transparent insulating layer 5 is preferably 10 ¹² Ω · cm or more. The thickness of the transparent insulating layer 5 is preferably 10 μm or less, more preferably 3 μm or less. When the bonding layer 7 having a thickness of, for example, about 50 μm is used, the unevenness caused by the first electrode 3, the transparent insulating layer 5 and the second electrode 4 is absorbed, and the surface of the optical layer 6 is absorbed. This is because the unevenness can be suppressed to such an extent that it cannot be visually observed.

(Shape example of transparent insulation layer)
8A to 9D are schematic diagrams illustrating examples of the shape of the transparent insulating layer. The shape of the transparent insulating layer 5 is not particularly limited as long as it is interposed between the first electrode 3 and the second electrode 4 at the intersection C and can prevent electrical contact between both electrodes. For example, a polygon such as a quadrangle (FIGS. 8A to 9B), an ellipse (FIG. 9C), a circle (FIG. 9D), and the like can be given as examples. Examples of the quadrangle include a rectangle (FIG. 8A), a square (FIG. 8B), a rhombus (FIG. 8D), a trapezoid (FIG. 9A), a parallelogram (FIG. 9C), and a rectangular shape with a curvature R (see FIG. 9). 9D).

(1-2-4) Electrode Shape FIG. 10A is an enlarged cross-sectional view of the region R ₁ shown in FIG. 4B. FIG. 10B is an enlarged cross-sectional view of the region R ₂ shown in FIG. 4B. As shown in FIG. 10A, the first pad portion 3 a and the second pad 3 b are preferably formed so as to follow the wavefront Sw of the optical layer 2. Thereby, the optical adjustment function with little wavelength dependency and excellent visibility can be obtained. Therefore, the visual recognition of the first electrode 3 and the second electrode 4 can be suppressed. The transparent insulating layer 5 is also preferably formed so as to follow the wavefront Sw of the optical layer 2. Thereby, the optical adjustment function with little wavelength dependency and excellent visibility can be obtained. Therefore, the visual recognition of the transparent insulating layer 5 can be suppressed.

  As shown in FIG. 10B, at the intersection C, the stacked second coupling portion 4b, transparent insulating layer 5 and first coupling portion 3b are all formed to follow the wavefront Sw of the optical layer 2. Is preferred. Thereby, in the tolerance part C, the optical adjustment function excellent in visibility can be obtained. Therefore, the visibility of the second electrode 4, the transparent insulating layer 5, and the first electrode 3 can be suppressed in the tolerance portion C.

  It is preferable that the 1st connection part 3b is formed so that the wave surface Sw of the optical layer 2 may be followed. In particular, when the first connecting portion 3b is made of a metal layer, the first connecting portion 3b is preferably formed so as to follow the wavefront Sw of the optical layer 2. This is because even if the first connecting portion 3b is made of a metal layer having a high reflectance, the first connecting portion 3b can be prevented from being visually recognized.

  From the viewpoint of obtaining an optical adjustment function with little wavelength dependency and excellent visibility, it is preferable that the first electrode 3 and the second electrode 4 are formed so as to follow the wavefront Sw of the optical layer 2, It is preferable that the first electrode 3, the transparent insulating layer 5, and the second electrode 4 are all formed so as to follow the wavefront Sw of the optical layer 2.

  FIG. 11A is an enlarged cross-sectional view for explaining examples of surface shapes of the first pad portion and the second pad portion. The first pad portion 3a and the second pad portion 4a have a first wavefront Sw1 and a second wavefront Sw2 that are synchronized with each other. It is preferable that the average widths of vibrations of the first wavefront Sw1 and the second wavefront Sw2 are different. The average width Am1 of the vibration of the first wavefront Sw1 is more preferably smaller than the average width Am2 of the vibration of the second wavefront Sw2. The cross-sectional shape when the first wavefront Sw1 or the second wavefront Sw2 is cut in one direction so as to include the position where the vibration width is maximum is, for example, a triangular wave shape, a sine wave shape, a quadratic curve, or A wave shape obtained by repeating a part of a quadratic curve, or a shape approximating them. Examples of the quadratic curve include a circle, an ellipse, and a parabola.

  FIG. 11B is an enlarged cross-sectional view for explaining the film thicknesses of the first pad portion and the second pad portion. As shown in FIG. 11B, the film thicknesses of the first pad portion 3a and the second pad portion 4a at the top of the structure 4 are set to D1, and the first pad portion 3a and the second pad on the inclined surface of the structure 4 When the thickness of the portion 4a is D2, and the thickness of the first pad portion 3a and the second pad portion 4a between the structures is D3, the thicknesses D1, D2, and D3 are preferably D1> D3, More preferably, the relationship of D1> D3> D2 is satisfied. Ratio of the film thickness D3 of the first pad portion 3a and the second pad portion 4a between the structures to the film thickness D1 of the first pad portion 3a and the second pad portion 4a at the top of the structure 4 (D3 / D1) is preferably in the range of 0.8 or less, more preferably 0.7 or less. By setting the ratio (D3 / D1) to 0.8 or less, the optical adjustment function can be improved as compared with the case where the ratio (D3 / D1) is 1. Accordingly, in the gap 9 between the pad portion forming region (electrode body forming region) where the first pad portion 3a and the second pad portion 4a are formed, and the first pad portion 3a and the second pad portion 4a. The reflectance difference ΔR from the wavefront exposed region where the wavefront Sw of the optical layer 2 is exposed can be reduced. That is, the visual recognition of the first electrode 3 and the second electrode 4 can be suppressed.

  The film thickness D1 of the first pad portion 3a and the second pad portion 4a at the top of the structure 4 and the film thickness D2 of the first pad portion 3a and the second pad portion 4a on the inclined surface of the structure 4 The film thickness D3 of the first pad portion 3a and the second pad portion 4a between the structures is the film thickness D1 of the transparent conductive layer 6 at the position where the wavefront Sw is highest, and the transparent conductive film on the inclined surface of the wavefront Sw. The film thickness D2 of the layer 6 is equal to the film thickness D3 of the transparent conductive layer 6 at the position where the wavefront Sw is lowest.

  The film thickness D1 of the first pad portion 3a and the second pad portion 4a at the top of the structure 4 is preferably 100 nm or less, more preferably 10 nm or more and 100 nm or less, and further preferably 10 nm or more and 80 nm or less. When it exceeds 100 nm, the visibility tends to deteriorate. On the other hand, if it is less than 10 nm, the electrical characteristics tend to deteriorate.

  The film thicknesses D1, D2, and D3 of the first pad portion 3a and the second pad portion 4a described above are obtained as follows. First, the information input device 1 is cut in the track extending direction so as to include the top of the structure 4, and the cross section is photographed with a TEM. Next, the film thickness D1 of the first pad portion 3a and the second pad portion 4a at the top of the structure 4 is measured from the taken TEM photograph. Next, the film thickness D <b> 2 at the position of half the height (H / 2) of the structure 4 among the positions of the inclined surfaces of the structure 4 is measured. Next, the film thickness D3 of the position where the depth of the recessed part becomes the deepest among the positions of the recessed parts between the structures is measured. Note that whether or not the film thicknesses D1, D2, and D3 of the first pad portion 3a and the second pad portion 4a have the above relationship is determined by the first pad portion 3a and the second pad portion 3a obtained as described above. This can be confirmed by the film thicknesses D1, D2, and D3 of the second pad portion 4a.

(1-3) Optical characteristics When the optical layer 6 is further formed on the first electrode 3 and the second electrode 4, the pad portion on which the first pad portion 3a and the second pad portion 3b are formed. The reflectance R1 of the formation region (electrode body formation region) and the reflectance R2 of the wavefront exposed region (see FIG. 4A) where the wavefront Sw is exposed in the gap 9 between the first pad portion 3a and the second pad portion 3b. The difference in reflectance ΔR (= R2−R1) is preferably 5% or less, more preferably 3% or less, and even more preferably 1% or less. By setting the reflectance difference ΔR to 5% or less, it is possible to suppress visual recognition of the first pad portion 3a and the second pad portion 3b.

  When the optical layer 6 is not formed on the first electrode 3 and the second electrode 4 and the first pad portion 3a and the second pad portion 3b are exposed, both main parts of the information input device 1 are used. The transmission hue in the L * a * b * chromaticity system on the main surface on the opposite side to the first pad portion 3a and the second pad portion 3b is preferably | a * | ≦ 10 and | b. * | ≦ 10, more preferably | a * | ≦ 5 and | b * | ≦ 5, and more preferably | a * | ≦ 3 and | b * | ≦ 3. Visibility can be improved by setting the transmission hue to | a * | ≦ 10 and | b * | ≦ 10.

  When the optical layer 6 is further formed on the first electrode 3 and the second electrode 4, the first pad portion 3a and the second pad portion 3b out of both main surfaces of the information input device 1 are opposite to each other. The transmission hue in the L * a * b * chromaticity system on the main surface on the side is preferably | a * | ≦ 5 and | b * | ≦ 5, more preferably | a * | ≦ 3 and | b * | ≦ 3, more preferably | a * | ≦ 2 and | b * | ≦ 2. Visibility can be improved by setting the transmission hue to | a * | ≦ 5 and | b * | ≦ 5.

  When the optical layer 6 is not formed on the first electrode 3 and the second electrode 4 and the first pad portion 3a and the second pad portion 3b are exposed, both main parts of the information input device 1 are used. The reflection hue in the L * a * b * chromaticity system on the main surface of the first pad portion 3a and the second pad portion 3b side of the surface is preferably | a * | ≦ 10 and | b * | ≦ 10. Visibility can be improved by setting the reflected hue to | a * | ≦ 10 and | b * | ≦ 10.

  When the optical layer 6 is further formed on the first electrode 3 and the second electrode 4, the main surfaces on the first pad portion 3 a and the second pad portion 3 b side of both the main surfaces of the information input device 1. The reflection hue in the L * a * b * chromaticity system at the surface is preferably | a * | ≦ 10 and | b * | ≦ 10, more preferably | a * | ≦ 5 and | b * | ≦ 5, More preferably, | a * | ≦ 3 and | b * | ≦ 3. Visibility can be improved by setting the reflection hue to | a * | ≦ 10 and | b * | ≦ 10.

(1-4) Configuration of Roll Master Disc FIG. 12A is a perspective view showing an example of the configuration of the roll master disc. 12B is an enlarged plan view showing a part of the roll master shown in FIG. 12A. 12C is a cross-sectional view taken along tracks T1, T3,... In FIG. The roll master 31 is a master for producing the optical layer 2 having the above-described configuration, more specifically, a master for molding a plurality of structures 4 on the above-described substrate surface. The roll master 31 has, for example, a columnar or cylindrical shape, and the columnar surface or cylindrical surface is a wave surface Sw on the substrate surface, that is, a molding surface for molding the plurality of structures 4. For example, a plurality of structures 32 are two-dimensionally arranged on the molding surface. The structure 32 has, for example, a concave shape or a convex shape with respect to the molding surface. FIG. 12C shows an example in which the structure 21 has a concave shape with respect to the molding surface. As a material of the roll master 31, for example, glass can be used, but it is not particularly limited to this material.

  The plurality of structures 32 arranged on the molding surface of the roll master 31 and the plurality of structures 4 arranged on the surface of the base 3 are in an inverted concavo-convex relationship. That is, the shape, arrangement, arrangement pitch, and the like of the structure 32 of the roll master 31 are the same as those of the structure 4 of the base 3.

(1-5) Configuration of Exposure Apparatus FIG. 13 is a schematic view showing an example of the configuration of a roll master exposure apparatus for producing a roll master. This roll master exposure apparatus is configured based on an optical disk recording apparatus.

  The laser light source 41 is a light source for exposing the resist deposited on the surface of the roll master 31 as a recording medium, and oscillates a recording laser beam 34 having a wavelength λ = 266 nm, for example. The laser light 34 emitted from the laser light source 41 travels straight as a parallel beam and enters an electro-optic element (EOM: Electro Optical Modulator) 42. The laser beam 34 transmitted through the electro-optic element 42 is reflected by the mirror 43 and guided to the modulation optical system 45.

  The mirror 43 is composed of a polarization beam splitter and has a function of reflecting one polarization component and transmitting the other polarization component. The polarization component transmitted through the mirror 43 is received by the photodiode 44, and the electro-optic element 42 is controlled based on the received light signal to perform phase modulation of the laser beam 34.

In the modulation optical system 45, the laser beam 34 is collected by an acousto-optic modulator (AOM) 47 made of glass (SiO ₂ ) or the like by a condenser lens 46. The laser beam 34 is intensity-modulated by an acoustooptic device 47 and diverges, and then converted into a parallel beam by a lens 48. The laser beam 34 emitted from the modulation optical system 45 is reflected by the mirror 51 and guided horizontally and parallel onto the moving optical table 52.

  The moving optical table 52 includes a beam expander 53 and an objective lens 54. The laser beam 34 guided to the moving optical table 52 is shaped into a desired beam shape by the beam expander 53 and then irradiated to the resist layer on the roll master 31 via the objective lens 54. The roll master 31 is placed on a turntable 56 connected to a spindle motor 55. Then, while rotating the roll master 31 and moving the laser light 34 in the height direction of the roll master 31, the resist layer is irradiated with the laser light 34 intermittently, thereby performing the resist layer exposure process. The formed latent image has a substantially elliptical shape having a major axis in the circumferential direction. The movement of the laser beam 34 is performed by the movement of the moving optical table 52 in the arrow R direction.

  The exposure apparatus includes a control mechanism 57 for forming a latent image corresponding to the two-dimensional pattern of the hexagonal lattice or the quasi-hexagonal lattice shown in FIG. 2C on the resist layer. The control mechanism 57 includes a formatter 49 and a driver 50. The formatter 49 includes a polarity reversal portion, and this polarity reversal portion controls the irradiation timing of the laser beam 34 to the resist layer. The driver 50 receives the output from the polarity inversion unit and controls the acoustooptic device 47.

  In this roll master exposure apparatus, a signal is generated by synchronizing the polarity inversion formatter signal and the rotation controller for each track so that the two-dimensional pattern is spatially linked, and the intensity is modulated by the acoustooptic device 47. A hexagonal lattice pattern or a quasi-hexagonal lattice pattern can be recorded by patterning at a constant angular velocity (CAV) with an appropriate rotation speed, an appropriate modulation frequency, and an appropriate feed pitch.

(1-6) Method for Manufacturing Information Input Device FIGS. 14A to 16D are process diagrams for explaining an example of a method for manufacturing the information input device according to the first embodiment of the present technology.

(Resist film formation process)
First, as shown in FIG. 14A, a columnar or cylindrical roll master 31 is prepared. The roll master 31 is, for example, a glass master. Next, as shown in FIG. 14B, a resist layer 33 is formed on the surface of the roll master 31. As a material of the resist layer 33, for example, either an organic resist or an inorganic resist may be used. As the organic resist, for example, a novolac resist or a chemically amplified resist can be used. Moreover, as an inorganic type resist, the metal compound which contains 1 type (s) or 2 or more types can be used, for example.

(Exposure process)
Next, as shown in FIG. 14C, a laser beam (exposure beam) 34 is irradiated onto the resist layer 33 formed on the surface of the roll master 31. Specifically, it is placed on the turntable 56 of the roll master exposure apparatus shown in FIG. 13, the roll master 31 is rotated, and the resist layer 33 is irradiated with a laser beam (exposure beam) 34. At this time, the laser beam 34 is intermittently irradiated while moving the laser beam 34 in the height direction of the roll master 31 (a direction parallel to the central axis of the columnar or cylindrical roll master 31). Layer 33 is exposed over the entire surface. As a result, a latent image 35 corresponding to the locus of the laser beam 34 is formed over the entire surface of the resist layer 33 at a pitch similar to the visible light wavelength, for example.

  For example, the latent image 35 is arranged to form a plurality of rows of tracks on the surface of the roll master, and forms a hexagonal lattice pattern or a quasi-hexagonal lattice pattern. The latent image 35 has, for example, an elliptical shape having a major axis direction in the track extending direction.

(Development process)
Next, for example, while rotating the roll master 31, a developer is dropped on the resist layer 33 to develop the resist layer 33. As a result, a plurality of openings are formed in the resist layer 33 as shown in FIG. 14D. When the resist layer 33 is formed of a positive resist, the exposed portion exposed with the laser beam 34 has a higher dissolution rate with respect to the developer than the non-exposed portion. Therefore, as shown in FIG. A pattern corresponding to the (exposed portion) 16 is formed on the resist layer 33. The pattern of the opening is a predetermined lattice pattern such as a hexagonal lattice pattern or a quasi-hexagonal lattice pattern.

(Etching process)
Next, the surface of the roll master 31 is etched using the pattern (resist pattern) of the resist layer 33 formed on the roll master 31 as a mask. As a result, as shown in FIG. 15A, an elliptical cone-shaped or elliptical truncated cone-shaped recess having a major axis direction in the track extending direction, that is, a structure 32 can be obtained. As the etching, for example, dry etching or wet etching can be used. At this time, by alternately performing the etching process and the ashing process, for example, the pattern of the conical structure 32 can be formed. Thus, the intended roll master 31 is obtained.

(Transfer process)
Next, as shown in FIG. 15B, after the roll master 31 and the transfer material 36 coated on the base 21 are brought into close contact with each other, energy rays such as ultraviolet rays are irradiated from the energy ray source 37 to the transfer material 36. After the transfer material 36 is cured, the substrate 21 integrated with the cured transfer material 36 is peeled off. As a result, as shown in FIG. 15C, the optical layer 2 having a plurality of structures 23 on the substrate surface is produced.

  The energy ray source 37 can emit energy rays such as electron beam, ultraviolet ray, infrared ray, laser beam, visible ray, ionizing radiation (X ray, α ray, β ray, γ ray, etc.), microwave, or high frequency. There is no particular limitation as long as it is present.

  As the transfer material 36, it is preferable to use an energy ray curable resin composition. As the energy ray curable resin composition, an ultraviolet curable resin composition is preferably used. The energy ray curable resin composition may contain a filler, a functional additive, etc. as needed.

  The ultraviolet curable resin composition contains, for example, an acrylate and an initiator. The ultraviolet curable resin composition includes, for example, a monofunctional monomer, a bifunctional monomer, a polyfunctional monomer, and the like. Specifically, the ultraviolet curable resin composition is a single material or a mixture of the following materials.

Monofunctional monomers include, for example, carboxylic acids (acrylic acid), hydroxys (2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 4-hydroxybutyl acrylate), alkyl, alicyclics (isobutyl acrylate, t-butyl acrylate) , Isooctyl acrylate, lauryl acrylate, stearyl acrylate, isobornyl acrylate, cyclohexyl acrylate), other functional monomers (2-methoxyethyl acrylate, methoxyethylene crycol acrylate, 2-ethoxyethyl acrylate, tetrahydrofurfuryl acrylate, benzyl acrylate, Ethyl carbitol acrylate, phenoxyethyl acrylate, N, N-dimethylaminoethyl acrylate, N, N- Dimethylaminopropylacrylamide, N, N-dimethylacrylamide, acryloylmorpholine, N-isopropylacrylamide, N, N-diethylacrylamide, N-vinylpyrrolidone, 2- (perfluorooctyl) ethyl acrylate, 3-perfluorohexyl-2- Hydroxypropyl acrylate, 3-perfluorooctyl-2-hydroxypropyl acrylate, 2- (perfluorodecyl) ethyl acrylate, 2- (perfluoro-3-methylbutyl) ethyl acrylate), 2,4,6-tribromophenol acrylate, 2 , 4,6-tribromophenol methacrylate, 2- (2,4,6-tribromophenoxy) ethyl acrylate), 2-ethylhexyl acrylate, etc. wear.
Examples of the bifunctional monomer include tri (propylene glycol) diacrylate, trimethylolpropane diallyl ether, urethane acrylate, and the like.

  Examples of the polyfunctional monomer include trimethylolpropane triacrylate, dipentaerythritol penta and hexaacrylate, and ditrimethylolpropane tetraacrylate.

  Examples of the initiator include 2,2-dimethoxy-1,2-diphenylethane-1-one, 1-hydroxy-cyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and the like. Can be mentioned.

As the filler, for example, both inorganic fine particles and organic fine particles can be used. Examples of the inorganic fine particles include metal oxide fine particles such as SiO ₂ , TiO ₂ , ZrO ₂ , SnO ₂ , and Al ₂ O ₃ .

  Examples of the functional additive include a leveling agent, a surface conditioner, and an antifoaming agent. Examples of the material of the substrate 21 include methyl methacrylate (co) polymer, polycarbonate, styrene (co) polymer, methyl methacrylate-styrene copolymer, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, polyester, polyamide, Examples include polyimide, polyether sulfone, polysulfone, polypropylene, polymethylpentene, polyvinyl chloride, polyvinyl acetal, polyether ketone, polyurethane, and glass.

  The molding method of the base 21 is not particularly limited, and may be an injection molded body, an extruded molded body, or a cast molded body. If necessary, surface treatment such as corona treatment may be applied to the substrate surface.

(Electrode formation process)
First, as shown in FIG. 16A, the transparent conductive layer 13 is formed on the wavefront Sw of the optical layer 2 on which the plurality of structures 23 are formed. When forming the transparent conductive layer 6, the film may be formed while heating the optical layer 2. As a method for forming the transparent conductive layer 6, for example, a CVD method such as thermal CVD, plasma CVD, or photo-CVD (Chemical Vapor Deposition: a technique for depositing a thin film from a gas phase using a chemical reaction) Besides, PVD methods such as vacuum deposition, plasma assisted deposition, sputtering, ion plating, etc. (Physical Vapor Deposition): Aggregate the material physically vaporized in vacuum on the substrate to form a thin film Technology).

  Next, as shown in FIG. 16B, by patterning the transparent conductive layer 13, the first pad portion 3a, the second pad portion 4a, and the second connecting portion 4b are formed on the wavefront Sw of the optical layer 2. To do. As a patterning method, for example, a method of forming a pattern by photolithography (a technique in which a photosensitive thin film is subjected to pattern exposure and a pattern is generated by etching) or the like can be used.

  The method of forming the first pad portion 3a, the second pad portion 4a, and the second connecting portion 4b is not limited to the above example, and masking is performed on portions other than the formation pattern when forming the transparent conductive layer. It is possible to use a method for forming a pattern, a printing method, or the like. As the printing method, for example, a gravure printing method, a flexographic printing method, an offset printing method, a screen printing method, an ink jet method, a dispensing method, or the like can be used.

(Insulating layer formation process)
Next, as illustrated in FIG. 16C, the transparent insulating layer 5 is formed on the surface of the second connection portion 4 b of the second electrode 4. As a method for forming the transparent insulating layer 5, for example, a method of forming a pattern by masking a portion other than the formation pattern when forming the transparent insulating layer, a method of forming a film without masking, and photolithography (photosensitive) A method of forming a pattern by performing pattern exposure on a conductive thin film and performing etching by a technique for generating a pattern by etching) or a method of forming a pattern by a printing method can be used. As a method for forming a transparent conductive layer, for example, a CVD method (Chemical Vapor Deposition: a technique for depositing a thin film from a gas phase using a chemical reaction) such as thermal CVD, plasma CVD, or photo-CVD. In addition, PVD methods (vacuum deposition, plasma-assisted deposition, sputtering, ion plating, etc.) (Physical Vapor Deposition): A technology that forms a thin film by agglomerating materials that are physically vaporized in a vacuum onto a substrate. ) Etc. can be used. As the printing method, for example, a gravure printing method, a flexographic printing method, an offset printing method, a screen printing method, an ink jet method, a dispensing method, or the like can be used.

(Connecting part formation process)
Next, as illustrated in FIG. 16D, the first connecting portion 3 b is formed so as to straddle the transparent insulating layer 5. As a result, the first electrode pads 3a are connected by the first connecting portions 3b. As a method of forming the first connecting portion 3b, for example, a method of forming a pattern by masking a portion other than the forming pattern at the time of film formation of the first connecting portion 3b, film formation without masking is performed. A method for forming a pattern by photolithography (a technique for pattern-exposing a photosensitive thin film and generating a pattern by etching) or a method for forming a pattern by a printing method can be used.

(Optical layer forming process)
Next, as necessary, the optical layer 6 is formed by bonding the substrate 8 to the wavefront of the wavefront Sw of the optical layer 2 via the bonding layer 7.

(effect)
According to the first embodiment, since the first electrode 3 and the second electrode 4 are formed on the same surface of the optical layer 2, the number of optical layers can be reduced. Therefore, it is possible to reduce internal reflection and suppress visibility degradation.

  Further, when the first electrode 3 and the second electrode 4 are formed on the wavefront Sw having an average wavelength equal to or smaller than the wavelength of visible light so as to follow the wavefront Sw, the wavelength dependency is small and the visibility is low. An excellent optical adjustment function can be obtained. Therefore, the visual recognition of the first electrode 3 and the second electrode 4 can be suppressed.

  Moreover, when the average angle of the slope of the wavefront Sw of the optical layer 2 is in the range of 30 ° to 60 °, excellent electrical reliability can be obtained.

(2) Second Embodiment FIG. 17 is a plan view illustrating an example of a surface shape of an optical layer of an information input device according to a second embodiment of the present technology. As shown in FIG. 17, the information input device 1 according to the second embodiment is different in that the plurality of structures 23 form a tetragonal lattice pattern or a quasi-tetragonal lattice pattern between adjacent three rows of tracks T. This is different from that of the first embodiment.

  Here, the tetragonal lattice means a regular tetragonal lattice. A quasi-tetragonal lattice means a distorted regular tetragonal lattice unlike a regular tetragonal lattice. For example, when the structures 23 are arranged on a straight line, the quasi-tetragonal lattice means a tetragonal lattice in which a regular tetragonal lattice is stretched and distorted in a linear arrangement direction (track direction). . When the structures 23 are arranged in an arc shape, the quasi-tetragonal lattice is a tetragonal lattice obtained by distorting a regular tetragonal lattice in an arc shape, or a regular tetragonal lattice in the arrangement direction (track direction). A square lattice that is stretched and distorted, and distorted in an arc shape. When the structures 23 are arranged in a meandering manner, the quasi-tetragonal lattice is a tetragonal lattice in which a regular tetragonal lattice is distorted by the meandering arrangement of the structures 23 or a regular tetragonal lattice in the arrangement direction ( A tetragonal lattice stretched in the track direction) and distorted by the meandering arrangement of the structures 23.

  The arrangement pitch P1 of the structures 23 in the same track is preferably longer than the arrangement pitch P2 of the structures 23 between two adjacent tracks. Further, when the arrangement pitch of the structures 23 in the same track is P1, and the arrangement pitch of the structures 23 between two adjacent tracks is P2, P1 / P2 is 1.4 <P1 / P2 ≦ 1.5. It is preferable to satisfy the relationship. By setting it as such a numerical value range, since the filling rate of the structure 23 which has an elliptical cone or elliptical truncated cone shape can be improved, an optical adjustment function can be improved. In addition, the height or depth of the structure 23 in the 45-degree direction or about 45-degree direction with respect to the track is preferably smaller than the height or depth of the structure 23 in the track extending direction.

  The height H2 in the arrangement direction (θ direction) of the structures 23 that are oblique to the track extending direction is preferably smaller than the height H1 of the structures 23 in the track extending direction. That is, it is preferable that the heights H1 and H2 of the structure 23 satisfy the relationship of H1> H2.

  When the structure 23 forms a tetragonal lattice or a quasi-tetragonal lattice pattern, the ellipticity e of the bottom surface of the structure is preferably 150% ≦ e ≦ 180%. It is because the filling rate of the structures 23 can be improved and an excellent optical adjustment function can be obtained by setting this range.

The ratio R _s ((S2 / S1) × 100) of the area S2 of the flat portion to the area S1 of the wave surface Sw is preferably 0% or more and 50% or less, more preferably 0% or more and 45% or less, and further preferably 0%. It is in the range of 30% or less. The ratio R _s by 50% or less, it is possible to improve the optical adjustment function.

Here, the ratio R _s ((S2 / S1) × 100) of the area S2 of the flat portion to the area S1 of the wave front Sw is a value obtained as follows. First, the surface of the information input device 1 is imaged with a top view using a scanning electron microscope (SEM). Next, the unit lattice Uc is selected at random from the photographed SEM photograph, and the arrangement pitch P1 and the track pitch Tp of the unit lattice Uc are measured (see FIG. 10B). Also, the area S (structure) of the bottom surface of any of the four structures 23 included in the unit cell Uc is measured by image processing. Next, using the measured arrangement pitch P1, track pitch Tp, and bottom surface area S (structure), the ratio R is obtained from the following equation.
Ratio R = [(S (lattice) −S (structure)) / S (lattice)] × 100
Unit lattice area: S (lattice) = 2 × ((P1 × Tp) × (1/2)) = P1 × Tp
Area of bottom surface of structure existing in unit cell: S (structure) = S

The processing for calculating the ratio R described above is performed for 10 unit lattices Uc randomly selected from the taken SEM photograph. Then, the measured values are simply averaged (arithmetic average) to obtain the average rate of the ratio R, which is defined as the ratio R _s .

  The ratio of the diameter 2r to the arrangement pitch P1 ((2r / P1) × 100) is 64% or more, preferably 69% or more, more preferably 73% or more. It is because the filling rate of the structures 23 can be improved and the optical adjustment function can be improved by setting the amount within such a range. Here, the arrangement pitch P1 is the arrangement pitch of the structures 23 in the track direction, and the diameter 2r is the diameter of the bottom surface of the structure in the track direction. When the bottom surface of the structure is circular, the diameter 2r is a diameter, and when the bottom surface of the structure is elliptical, the diameter 2r is a long diameter.

  In the second embodiment, other than the above are the same as those in the first embodiment.

  According to the second embodiment, an effect similar to that of the first embodiment can be obtained.

(3) Third Embodiment FIG. 18A is a plan view illustrating an example of a surface shape of an optical layer of an information input device according to a third embodiment of the present technology. The information input device 1 according to the third embodiment is the first implementation in that the wavefront Sw of the optical layer 2 is formed by two-dimensionally arranging a plurality of structures 23 randomly (irregularly). It is different from the form.

  FIG. 18B is a cross-sectional view illustrating an example of the surface shape of the optical layer of the information input device according to the third embodiment of the present technology. As shown in FIG. 18B, at least one of the shape, size, and height of the structure 21 may be randomly changed.

  As a method for producing a master for producing the optical layer 2 having the above-described surface shape, for example, a method of anodizing the surface of a metal substrate such as an aluminum substrate can be used, but this method is particularly limited. Is not to be done.

  In the third embodiment, other than the above are the same as in the first embodiment.

  In the third embodiment, since the plurality of structures 23 are two-dimensionally arranged at random, occurrence of unevenness in appearance can be suppressed.

(4) Fourth Embodiment FIG. 19 is a cross-sectional view illustrating an example of a configuration of an information input device according to a fourth embodiment of the present technology. As shown in FIG. 19, the information input device 1 is provided on the display surface of the display device 61. In the fourth embodiment, the same portions as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  The first electrode 3 and the second electrode 4 formed on the wavefront Sw of the optical layer 2 are exposed, and the wavefront Sw on which these electrodes are exposed and the display surface of the display device 61 are opposed to each other with a predetermined distance therebetween. Has been placed. A bonding layer 62 is provided between the peripheral portions of the information input device 1 and the display device 61 and bonded to each other. As the bonding layer 121, for example, an adhesive paste, an adhesive tape, or the like can be used.

  The display device 102 provided with the information input device 101 is not particularly limited. For example, a liquid crystal display, a CRT (Cathode Ray Tube) display, a plasma display panel (PDP), electroluminescence (Electro Examples thereof include various display devices such as a Luminescence (EL) display, a surface-conduction electron-emitter display (SED), and electronic paper.

  According to the fourth embodiment, since the first electrode 3 and the second electrode 4 are formed on the wavefront Sw, even if the first electrode 3 and the second electrode 4 are exposed, the first electrode 3 and the second electrode 4 are exposed. Visual recognition of the first electrode 3 and the second electrode 4, for example, visual recognition of the first pad portion 3a and the second pad portion 4a can be suppressed.

(5) Configuration of the present technology The present technology may also have the following configurations.
(1) an optical layer having a surface;
A plurality of first electrodes formed on the surface;
A plurality of second electrodes formed on the surface so as to intersect the first electrode;
A transparent insulating layer interposed at an intersection where the first electrode and the second electrode intersect,
The surface of the optical layer is a wavefront having an average wavelength equal to or less than the wavelength of visible light,
An information input device wherein the ratio (Am / λm) is in the range of 0.2 to 1.0, where λm is the average wavelength of the wavefront and Am is the average width of vibration of the wavefront.
(2) The first electrode includes a plurality of first unit electrode bodies and a plurality of first connection portions that connect the plurality of first unit electrode bodies, respectively.
The second electrode includes a plurality of second unit electrode bodies and a plurality of second connecting portions that connect the plurality of second unit electrode bodies to each other,
At the intersection, the second connecting portion, the transparent insulating layer, and the first connecting portion are laminated on the surface in this order,
The information input device according to (1), wherein the first connecting portion connects the first unit electrode bodies across the transparent insulating layer.
(3) The first unit electrode body, the second unit electrode body, and the second connecting portion are transparent conductive layers mainly composed of a transparent conductive material,
The information input device according to (2), wherein the first connecting portion is a conductive layer mainly composed of a metal or a transparent conductive material.
(4) The average angle of the slope of the wavefront is in the range of 30 ° to 60 °,
When the film thickness of the transparent conductive layer at the position where the wavefront is highest is D1, and the film thickness of the transparent conductive layer at the position where the wavefront is lowest is D3, the ratio D3 / D1 is 0.8 or less. The information input device according to (3), which is within a range.
(5) The information input device according to (3) or (4), wherein the film thickness of the transparent conductive layer at the position where the wavefront is highest is 100 nm or less.
(6) The information input device according to any one of (2) to (5), wherein the first unit electrode body and the second unit electrode body are formed so as to follow the wavefront.
(7) The information input device according to any one of (1) to (5), wherein the first electrode, the second electrode, and the transparent insulating layer are formed so as to follow the wavefront. .
(8) On the wavefront of the optical layer, an electrode body forming region in which the first unit electrode body and the second unit electrode body are formed, and the first unit electrode body and the second unit electrode. There is a wavefront exposed area where the wavefront is exposed between the body,
The information input device according to any one of (2) to (5), wherein a reflectance difference ΔR between the electrode body forming region and the wavefront exposed region is 5% or less.
(9) The reflection hue in the L * a * b * chromaticity system on the wavefront side is | a * | ≦ 10 and | b * | ≦ 10, according to any one of (1) to (8) Information input device.
(10) Any of (1) to (8) in which the transmitted hue in the L * a * b * chromaticity system on the surface opposite to the wavefront is | a * | ≦ 10 and | b * | ≦ 10 The information input device according to claim 1.
(11) The information input device according to any one of (1) to (8), further including an optical layer on a surface on which the first electrode and the second electrode are formed.
(12) The information input device according to (11), wherein a transmission hue in an L * a * b * chromaticity system on a surface opposite to the wavefront is | a * | ≦ 5 and | b * | ≦ 5.
(13) The information input device according to any one of (1) to (12), wherein an area of a flat portion of the wavefront is 50% or less.
(14) The average wavelength λm of the wavefront is 140 nm or more and 300 nm or less,
The information input device according to any one of (1) to (13), wherein an average width Am of vibration of the wavefront is 28 nm or more and 300 nm or less.
(15) The wavefront is formed by a plurality of structures arranged so as to form a plurality of rows,
The information input device according to any one of (1) to (14), wherein the row has a linear shape or an arc shape.
(16) The wavefront is formed by a plurality of structures arranged so as to form a plurality of rows,
The information input device according to any one of (1) to (15), wherein the row is meandering.
(17) The structure forms a lattice pattern between adjacent columns,
The information input device according to (15) or (16), wherein the lattice pattern is at least one of a hexagonal lattice pattern, a quasi-hexagonal lattice pattern, a tetragonal lattice pattern, and a quasi-tetragonal lattice pattern.

  Hereinafter, the present technology will be specifically described by way of examples. However, the present technology is not limited only to these examples.

  Hereinafter, although this technique is concretely demonstrated with a sample, this technique is not limited only to these samples.

(Average height Hm, average arrangement pitch Pm, aspect ratio (Hm / Pm))
In the following, the average height Hm, average arrangement pitch Pm, and aspect ratio (Hm / Pm) of a structure such as a transparent conductive sheet were determined as follows.

  First, the transparent conductive sheet was cut so as to include the top of the structure, and the cross section was photographed with a transmission electron microscope (TEM). Next, the arrangement pitch P of the structures and the height H of the structures were obtained from the photographed TEM photographs. This measurement was repeated at 10 points randomly selected from the transparent conductive sheet, and the measured values were simply averaged (arithmetic average) to obtain the average arrangement pitch Pm and the average height Hm. Next, the aspect ratio (Hm / Pm) was determined using the average arrangement pitch Pm and the average height Hm.

  The average height Hm, the average arrangement pitch Pm, and the aspect ratio (Hm / Pm) of the structure correspond to the average width Am of the wavefront vibration, the average wavelength of the wavefront λm, and the ratio (Am / λm), respectively. To do.

(ITO film thickness)
In the following, the film thickness of the ITO film was determined as follows.
First, the transparent conductive sheet is cut so as to include the top of the structure, the cross section is photographed with a transmission electron microscope (TEM), and the film thickness of the ITO film on the top of the structure is determined from the photographed TEM photograph. It was measured.

(Average angle of structure slope)
In the following, the average angle of the structure slope was determined as follows.
First, the transparent conductive sheet was cut so as to include the top of the structure, and the cross section was photographed with a transmission electron microscope (TEM). Next, the average value of the angle of the slope from the bottom to the top (the average value of the slope angle of one structure) was determined from the photographed TEM photograph. The process of obtaining such an average value is repeated at 10 points randomly selected from the transparent conductive sheet, and the average value of the slope angles of the 10 structures is simply averaged (arithmetic average) The average angle of the body slope was used.

Samples 1-1 to 10-5 will be described in the following order.
1. Flat area ratio (samples 1-1 to 1-3)
2. Color tone (Samples 2-1 to 2-3)
3. Film thickness ratio of transparent conductive layer (Samples 3-1 to 3-3)
4). Aspect ratio (Samples 4-1 to 4-4)
5. Electrical reliability (Samples 5-1 to 5-6)
6). Reflectance difference ΔR (Samples 6-1 to 6-4)
7). Structure shape (Samples 7-1 to 7-3)
8). Pattern distortion (Samples 8-1 and 8-2)
9. Etching resistance (Samples 9-1 to 10-5)

<1. Flat area ratio>
In Samples 1-1 to 1-3, the relationship between the flat area ratio and the reflectance was examined by optical simulation using RCWA (Rigorous Coupled Wave Analysis).

(Sample 1-1)
The reflection spectrum of the transparent conductive element was obtained by optical simulation. The resulting graph is shown in FIG. 20B.

The conditions for optical simulation are shown below.
(Configuration of transparent conductive element)
The transparent conductive element had the following laminated structure.
(Incident side) substrate / structure / transparent conductive layer / optical layer (exit side)

FIG. 20A is a plan view showing a plurality of structures arranged on the substrate surface. In FIG. 20A, the circular shape indicates the bottom surface of the structure, Uc indicates a unit cell, and r _s indicates the radius of the bottom surface of the structure. As shown in FIG. 20A, a plurality of structures are arranged on the substrate surface.

(Substrate)
Refractive index n: 1.52
(Structure)
Structure arrangement: hexagonal lattice Structure shape: bell-shaped structure Bottom face: circular Arrangement pitch (wavelength λ) P: 250 nm
Structure height (amplitude A) H: 150 nm
Aspect ratio (H / P): 0.6
Area S (lattice) of unit cell Uc: 2 × 2√3
Radius r _s of the bottom surface of the structure: 0.9
Area S (structure) of the bottom surface of the structure: 2 × πr _s ² = 2 × π × 0.9 ²
Area ratio R _{s of} flat portion: [(S (lattice) −S (structure)) / S (lattice)] × 100 = 26.54%
(Transparent conductive layer)
Refractive index n of transparent conductive layer: 2.0
Transparent conductive layer thickness t: 60-75 nm
Thickness D1: 75 nm of the transparent conductive layer on the top of the structure
Transparent conductive layer thickness D3 between structures: 60 nm
Film thickness ratio D3 / D1: 0.8
(Optical layer)
Refractive index n: 1.52
(Incident light)
Polarization: Non-polarization Incident angle: 5 degrees (relative to the normal of the transparent conductive element)

(Sample 1-2)
The reflection spectrum of the transparent conductive element was determined by optical simulation in the same manner as Sample 1-1 except that the following conditions were changed. The resulting graph is shown in FIG. 20B.

(Structure)
Radius r _s of the bottom surface of the structure: 0.8
Area S (structure) of the bottom surface of the structure: 2 × πr _s ² = 2 × π × 0.8 ²
Flat area ratio: [(S (lattice) −S (structure)) / S (lattice)] × 100 = 41.96%

(Sample 1-3)
The reflection spectrum of the transparent conductive element was determined by optical simulation in the same manner as Sample 1-1 except that the following conditions were changed. The resulting graph is shown in FIG. 20B.

(Structure)
Radius r _s of the bottom surface of the structure: 0.7
Area S (structure) of the bottom surface of the structure: 2 × πr _s ² = 2 × π × 0.7 ²
Area ratio of flat part: [(S (lattice) −S (structure)) / S (lattice)] × 100 = 55.56%

The following can be seen from FIG. 20B.
By setting the area ratio of the flat portion to 50% or less on the surface of the transparent conductive element, the luminous reflectance (reflectance at a wavelength of 550 nm) can be 2% or less.
Visibility can be improved by setting the luminous reflectance to 2% or less.

In addition, when the radius r _s of the bottom surface of the structure, the area S (structure) of the bottom surface of the structure, and the area ratio R _s of the flat portion are set as follows, reflection is performed as compared with the sample 1-1. The rate can be further reduced.
Radius r _s of the bottom surface of the structure: 1.0
Area S (structure) of the bottom surface of the structure: 2 × πr _s ² = 2 × π × 1.0 ²
Flat area ratio R _s : [(S (lattice) −S (structure)) / S (lattice)] × 100 = 9.31%

<2. Color tone>
In Samples 2-1 to 2-3, the color tone was examined by actually producing a transparent conductive sheet.

(Sample 2-1)
First, a glass roll master having an outer diameter of 126 mm was prepared, and a resist layer was deposited on the surface of the glass roll master as follows. That is, the photoresist was diluted to 1/10 with a thinner, and this diluted resist was applied to the thickness of about 70 nm on the cylindrical surface of the glass roll master by dipping, thereby forming a resist layer. Next, the glass roll master as a recording medium is transported to the roll master exposure apparatus shown in FIG. 13 and exposed to the resist layer, thereby being connected in one spiral and hexagonal between three adjacent tracks. A latent image having a lattice pattern was patterned on the resist layer.

  Specifically, a hexagonal lattice-shaped exposure pattern was formed by irradiating an area where a hexagonal lattice-shaped exposure pattern was to be formed with a laser beam having a power of 0.50 mW / m for exposing the surface of the glass roll master. . The thickness of the resist layer in the row direction of the track row was about 60 nm, and the thickness of the resist in the track extending direction was about 50 nm.

  Next, the resist layer on the glass roll master was subjected to development treatment, and the exposed resist layer was dissolved and developed. Specifically, an undeveloped glass roll master is placed on a turntable of a developing machine (not shown), and a developer is dropped on the surface of the glass roll master while rotating the entire turntable to develop the resist layer on the surface. did. Thereby, a resist glass master having a resist layer opened in a hexagonal lattice pattern was obtained.

Next, plasma etching was performed in a CHF ₃ gas atmosphere using a roll etching apparatus. As a result, only the hexagonal lattice pattern exposed from the resist layer is etched on the surface of the glass roll master, and the resist layer is used as a mask for the other regions and etching is not performed. Formed on the master. At this time, the etching amount (depth) was adjusted by the etching time. Finally, the moth-eye glass roll master having a concave hexagonal lattice pattern was obtained by completely removing the resist layer by O ₂ ashing. The depth of the recesses in the row direction was deeper than the depth of the recesses in the track extending direction.

Next, a plurality of structures were produced on a PET sheet having a thickness of 125 μm by UV imprinting using the moth-eye glass roll master. Specifically, the moth-eye glass roll master and a PET (polyethylene terephthalate) sheet coated with an ultraviolet curable resin were brought into close contact with each other and peeled while being irradiated with ultraviolet rays and cured. Thus, an optical sheet in which a plurality of the following structures are arranged on one main surface was obtained.
Structure arrangement: hexagonal lattice Structure shape: bell-shaped structure Average arrangement pitch (wavelength λ) Pm: 250 nm
Average height of structure (amplitude A) Hm: 125 nm
Structure aspect ratio (Hm / Pm): 0.5

  Next, a transparent conductive sheet was produced by forming an ITO layer on the surface of the PET sheet on which a plurality of structures were formed by sputtering.

The conditions for forming the ITO layer are shown below.
Gas type: Mixed gas of Ar gas and O ₂ gas Mixed gas mixture ratio (volume ratio): Ar: O ₂ = 200: 10
ITO layer thickness: 75nm
Here, the film thickness of the ITO layer is the film thickness at the top of the structure.

  Next, the transparent conductive sheet was bonded on a glass substrate having a refractive index of 1.5 via an adhesive sheet so that the surface on the ITO layer side was the surface side of the glass substrate.

  Thus, the intended transparent conductive sheet was produced.

(Sample 2-2)
An optical sheet was produced in the same manner as Sample 2-1, except that a plurality of the following structures were arranged on one main surface of the PET sheet.
Structure arrangement: hexagonal lattice Structure shape: bell-shaped structure Average arrangement pitch Pm: 250 nm
Average height of structure body Hm: 150 nm
Aspect ratio (Hm / Pm): 0.6

  Next, a transparent conductive sheet was produced by forming an ITO layer on the surface of the PET sheet on which a plurality of structures were formed by sputtering.

The conditions for forming the ITO layer are shown below.
Gas type: Mixed gas of Ar gas and O ₂ gas Mixed gas mixture ratio (volume ratio): Ar: O ₂ = 200: 10
ITO layer thickness: 100 nm
Here, the film thickness of the ITO layer is the film thickness at the top of the structure.

Next, the transparent conductive sheet was bonded on a glass substrate having a refractive index of 1.5 via an adhesive sheet so that the surface on the ITO layer side was the surface side of the glass substrate.
Thus, the intended transparent conductive sheet was produced.

(Sample 2-3)
First, an optical sheet was produced in the same manner as Sample 2-1, except that the formation of the ITO layer was omitted.

Next, the optical sheet was bonded onto a glass substrate having a refractive index of 1.5 via a pressure-sensitive adhesive sheet so that the surface on which the plurality of structures were formed was the surface side of the glass substrate.
Thus, the intended transparent conductive sheet was produced.

(Transparent hue)
Using the transparent conductive sheet and the optical sheet produced as described above as a measurement sample, a transmission spectrum in a visible wavelength region (350 nm to 800 nm) is measured with a spectrophotometer, and the transmission hue a *, b * was calculated. The measurement result of the transmission spectrum is shown in FIG. Table 1 shows the calculation results of the transmitted hues a * and b *.

Table 1 shows the calculation results of the transmission hues of Samples 2-1 to 2-3.

Table 1 shows the following.
In the transparent conductive sheets of Samples 2-1 and 2-2, both a * and b * are values smaller than 3, indicating that they are colorless and transparent and have good characteristics.

<3. Film thickness ratio of transparent conductive layer>
In Samples 3-1 to 3-3, the relationship between the film thickness ratio (D3 / D1) of the transparent conductive layer and the reflectance was examined by optical simulation using RCWA.

(Sample 3-1)
The reflection spectrum of the transparent conductive element was obtained by optical simulation, and the reflection hues a * and b * and the reflection Y value were obtained from this reflection spectrum. The resulting graph is shown in FIG.

  Similarly, the transmission spectrum of the transparent conductive element was obtained by optical simulation, and the transmission hues a * and b * were obtained from this transmission spectrum. The resulting graph is shown in FIG. 22B and Table 3.

The conditions for optical simulation are shown below.
(Configuration of transparent conductive element)
The transparent conductive element had the following laminated structure.
(Incident side) substrate / structure / transparent conductive layer / optical layer (exit side)

(Substrate)
Refractive index n: 1.52
(Structure)
Structure arrangement: hexagonal lattice Structure shape: bell-shaped structure Bottom face: circular Arrangement pitch (wavelength λ) P: 250 nm
Structure height (amplitude A) H: 150 nm
Aspect ratio (H / P): 0.6
Area S (lattice) of unit cell Uc: 2 × 2√3
Flat area ratio R _s : [(S (lattice) −S (structure)) / S (lattice)] × 100 = 42%
(Transparent conductive layer)
Refractive index n of transparent conductive layer: 2.0
Transparent conductive layer thickness t: 50 nm
Thickness D1: 50 nm of transparent conductive layer on top of structure
Transparent conductive layer thickness D3 between structures: 50 nm
Film thickness ratio D3 / D1: 1
(Optical layer)
Refractive index n: 1.52
(Incident light)
Polarization: Non-polarization Incident angle: 5 degrees (relative to the normal of the transparent conductive element)

(Sample 3-2)
Except for changing the following optical simulation conditions, an optical simulation was performed in the same manner as in Sample 3-1, a reflection spectrum was obtained, and reflection hues a * and b * and a reflection Y value were obtained from the reflection spectrum. The resulting graph is shown in FIG.

  Similarly, the transmission spectrum of the transparent conductive element was obtained by optical simulation, and the transmission hues a * and b * were obtained from this transmission spectrum. The resulting graph is shown in FIG. 22B and Table 3.

(Transparent conductive layer)
Transparent conductive layer thickness t: 40-50 nm
Thickness D1: 50 nm of transparent conductive layer on top of structure
Transparent conductive layer thickness D3 between structures: 40 nm
Film thickness ratio D3 / D1: 0.8

(Sample 3-3)
Except for changing the following optical simulation conditions, an optical simulation was performed in the same manner as in Sample 3-1, a reflection spectrum was obtained, and reflection hues a * and b * and a reflection Y value were obtained from the reflection spectrum. The resulting graph is shown in FIG.

  Similarly, the transmission spectrum of the transparent conductive element was obtained by optical simulation, and the transmission hues a * and b * were obtained from this transmission spectrum. The resulting graph is shown in FIG. 22B and Table 3.

(Transparent conductive layer)
Transparent conductive layer thickness t: 30 nm to 50 nm
Thickness D1: 50 nm of transparent conductive layer on top of structure
Transparent conductive layer thickness D3 between structures: 30 nm
Film thickness ratio D3 / D1: 0.6

The following can be understood from FIG. 22A.
By setting the film thickness ratio D3 / D1 to less than 1, the reflection characteristics can be improved. Specifically, the film thickness ratio D3 / D1 is preferably 0.8 or less, more preferably 0.6 or less.

<4. Aspect ratio>
In Samples 4-1 to 4-4, the relationship between the aspect ratio of the structure and the reflectance was examined by optical simulation using RCWA.

(Sample 4-1)
The reflection spectrum of the transparent conductive element was obtained by optical simulation, and the reflection hues a * and b * and the reflection Y value were obtained from the reflection spectrum. The results are shown in FIG.

The conditions for optical simulation are shown below.
(Configuration of transparent conductive element)
The transparent conductive element had the following laminated structure.
(Incident side) substrate / structure / transparent conductive layer / optical layer (exit side)

(Substrate)
Refractive index n: 1.52
(Structure)
Structure arrangement: hexagonal lattice Structure shape: bell-shaped structure Bottom face: circular Arrangement pitch (wavelength λ) P: 250 nm
Structure height (amplitude A) H: 200 nm
Aspect ratio (H / P): 0.8
Area S (lattice) of unit cell Uc: 2 × 2√3
Flat area ratio R _s : [(S (lattice) −S (structure)) / S (lattice)] × 100 = 42%
(Transparent conductive layer)
Refractive index n of transparent conductive layer: 2.0
Transparent conductive layer thickness t: 60-75 nm
Thickness D1: 75 nm of the transparent conductive layer on the top of the structure
Transparent conductive layer thickness D3 between structures: 60 nm
Film thickness ratio D3 / D1: 0.8
(Optical layer)
Refractive index n: 1.52
(Incident light)
Polarization: Non-polarization Incident angle: 5 degrees (relative to the normal of the transparent conductive element)

(Sample 4-2)
Except for changing the following optical simulation conditions, an optical simulation was performed in the same manner as in Sample 4-1, a reflection spectrum was obtained, and reflection hues a * and b * and a reflection Y value were obtained from the reflection spectrum. The resulting graph is shown in FIG.

(Structure)
Arrangement pitch (wavelength λ) P: 250 nm
Structure height (amplitude A) H: 150 nm
Aspect ratio (H / P): 0.6

(Sample 4-3)
Except for changing the following optical simulation conditions, an optical simulation was performed in the same manner as in Sample 4-1, a reflection spectrum was obtained, and reflection hues a * and b * and a reflection Y value were obtained from the reflection spectrum. The resulting graph is shown in FIG.

(Structure)
Arrangement pitch (wavelength λ) P: 250 nm
Structure height (amplitude A) H: 100 nm
Aspect ratio (H / P): 0.4

(Sample 4-4)
Except for changing the following optical simulation conditions, an optical simulation was performed in the same manner as in Sample 4-1, a reflection spectrum was obtained, and reflection hues a * and b * and a reflection Y value were obtained from the reflection spectrum. The resulting graph is shown in FIG.

(Structure)
Arrangement pitch (wavelength λ) P: 400 nm
Structure height (amplitude A) H: 60 nm
Aspect ratio (H / P): 0.15

The following can be seen from FIG.
When the aspect of the structure is in the range of 0.2 to 1.0, an excellent optical adjustment function can be obtained.

<5. Electrical reliability>
In Samples 5-1 to 5-5, the relationship between the average angle of the structure slope and the electrical reliability was examined by actually producing a transparent conductive sheet.

(Sample 5-1)
An optical sheet was produced in the same manner as Sample 2-1, except that a plurality of the following structures were arranged on one main surface of the PET sheet.
Structure arrangement: hexagonal close-packed structure shape: frustoconical structure structure average arrangement pitch Pm: 220 nm
Average height of structure Hm: 240 nm
Structure aspect ratio (Hm / Pm): 1.091
Mean angle θm of structure slope: 65 degrees

  Next, a transparent conductive sheet was produced by forming an ITO layer on the surface of the PET sheet on which a plurality of structures were formed by sputtering.

The conditions for forming the ITO layer are shown below.
Gas type: Mixed gas of Ar gas and O ₂ gas Mixed gas mixture ratio (volume ratio): Ar: O ₂ = 200: 13
Film thickness of ITO layer: 36 nm to 40 nm
Here, the film thickness of the ITO layer is the film thickness at the top of the structure.

(Sample 5-2)
A transparent conductive sheet was produced in the same manner as in Sample 5-1, except that a plurality of the following structures were arranged on one main surface of the PET sheet.
Structure arrangement: hexagonal close-packed structure shape: frustoconical shape Structure average arrangement pitch Pm: 250 nm
Average height of structure Hm: 180 nm
Aspect ratio (Hm / Pm) of structure: 0.72
Mean angle θm of structure slope: 55 degrees

(Sample 5-3)
A transparent conductive sheet was produced in the same manner as in Sample 5-1, except that a plurality of the following structures were arranged on one main surface of the PET sheet.
Structure arrangement: hexagonal close-packed structure shape: frustoconical shape Structure average arrangement pitch Pm: 270 nm
Average height of structure Hm: 150 nm
Structure aspect ratio (Hm / Pm): 0.55
Average angle of structure slope θm: 70 degrees

(Sample 5-4)
A transparent conductive sheet was produced in the same manner as in Sample 5-1, except that a plurality of the following structures were arranged on one main surface of the PET sheet.
Structure arrangement: hexagonal close-packed structure shape: frustoconical shape Structure average arrangement pitch Pm: 250 nm
Average height of structure Hm: 135 nm
Structure aspect ratio (Hm / Pm): 0.54
Mean angle θm of structure slope: 50 degrees

(Sample 5-5)
A transparent conductive sheet was produced in the same manner as in Sample 5-1, except that the formation of the structure was omitted and an ITO layer having a thickness of 20 nm was formed on one flat main surface of the PET sheet.

(Sample 5-6)
Sample 5 was prepared except that the formation of the structure was omitted and a 20 nm thick NbO layer, a 90 nm thick SiO ₂ layer, and a 20 nm thick ITO layer were sequentially formed on one flat main surface of the PET sheet. In the same manner as in Example 1, a transparent conductive sheet was produced.

(Heat shock test)
First, the transparent conductive sheet produced as described above was aged at 150 ° C. for 30 minutes in the atmosphere. Next, after holding for 30 minutes in a low temperature environment of −30 degrees, an environmental test of holding for 30 minutes in a high temperature environment of 70 degrees was performed on the transparent conductive sheet for 50 cycles. Next, the surface resistance of the transparent conductive sheet was measured by a four-probe method (JIS K 7194). The results are shown in Table 5.

(High temperature test)
First, the transparent conductive sheet produced as described above was aged at 150 ° C. for 30 minutes in the atmosphere. Next, after keeping the transparent conductive sheet in a low-temperature environment of 80 degrees for 240 hours, the surface resistance of the transparent conductive sheet was measured by a four-probe method (JIS K 7194). The results are shown in Table 5.

Table 5 shows the results of heat shock test and high temperature test (hereinafter referred to as reliability test) of Samples 5-1 to 5-6.

Table 5 shows the following.
In Samples 5-5 and 5-6 having a structure of single-layer ITO and multilayer ITO, the surface resistance increases by 10% or more by the reliability test.
In Sample 5-1, in which a structure with a high aspect ratio of 1.09 is formed on the surface, the inclination angle is as large as 65 degrees, so that the surface resistance is greatly increased by the reliability test.
Even in Sample 5-3 in which the structure having a low aspect ratio of 0.55 is formed, since the shape of the structure is an elliptic frustum, the plane inclination angle is increased to 70 degrees, and the surface resistance is increased by the reliability test.
In Samples 5-2 and 5-4, which have a low aspect ratio of 1.0 or less and a gradual surface inclination angle of 60 degrees or less, the resistance of the surface resistance by the reliability test is extremely small.

  If the ITO layer has a film thickness of several tens of nanometers, it is considered that a part of the substrate is disconnected due to stress due to the change due to the expansion / contraction rate of the substrate, but the stress is relieved by applying the structure to the surface of the substrate. It is thought that the sex will improve dramatically.

  Therefore, the shape of the structure is preferably a cone shape having a convex curved surface at the top from the viewpoint of electrical reliability. From the viewpoint of electrical reliability, the average tilt angle of the structure is preferably 60 degrees or less.

<6. Reflectance difference ΔR>
(Sample 6-1)
First, a transparent conductive sheet was produced in the same manner as Sample 1-1 except that a plurality of the following structures were arranged on one main surface of a PET sheet.
Structure arrangement: hexagonal lattice Structure shape: bell-shaped structure Average arrangement pitch Pm: 250 nm
Average structure height Hm: 90 nm
Structure aspect ratio (Hm / Pm): 0.36
Inclined portion average angle θm of structure: 36 deg

  Next, a transparent conductive sheet was produced by forming an ITO layer on the surface of the PET sheet on which a plurality of structures were formed by sputtering.

The conditions for forming the ITO layer are shown below.
Gas type: Mixed gas of Ar gas and O ₂ gas Mixed gas mixture ratio (volume ratio): Ar: O ₂ = 200: 13
Film thickness of ITO layer: 30nm
Here, the film thickness of the ITO layer is the film thickness at the top of the structure.

Next, the transparent conductive sheet was bonded on a glass substrate having a refractive index of 1.5 via an adhesive sheet so that the surface on the ITO layer side was the surface side of the glass substrate.
Thus, the intended transparent conductive sheet was produced.

(Sample 6-2)
First, an optical sheet was produced in the same manner as Sample 6-1 except that the formation of the ITO layer was omitted.

Next, the optical sheet was bonded onto a glass substrate having a refractive index of 1.5 via a pressure-sensitive adhesive sheet so that the surface on which the plurality of structures were formed was on the surface side of the glass substrate.
The target optical sheet was produced by the above.

(Sample 6-3)
A transparent conductive sheet was produced in the same manner as in Sample 6-1, except that the formation of the structure was omitted and an ITO layer having a thickness of 30 nm was formed on one flat main surface of the PET sheet.

(Sample 6-4)
An optical sheet was produced in the same manner as Sample 6-3 except that the formation of the ITO layer was omitted.

(Reflection spectrum)
First, the measurement sample was produced by sticking a black tape on the surface on the opposite side to the side which bonded the glass substrate of the transparent conductive sheet and optical sheet which were produced as mentioned above. Next, the reflection spectrum in the visible wavelength region (350 nm to 700 nm) of this measurement sample was measured with a spectrophotometer (trade name: V-550, manufactured by JASCO Corporation). Next, the reflectance difference ΔR was calculated by the following equation. The calculation result of the reflectance difference ΔR is shown in FIG. Table 6 shows the calculation result of the difference ΔR in luminous reflectance. Here, the luminous reflectance is a reflectance at a wavelength of 550 nm.
ΔR = ((reflectance of sample 6-2) − (reflectance of sample 6-1))
ΔR = ((reflectance of sample 6-4) − (reflectance of sample 6-3))

(Reflective hue)
The reflection hues a * and b * were calculated from the reflection spectrum measured as described above. The results are shown in Table 6.

Table 6 shows the calculation results of the luminous reflectance difference ΔR and the reflection hue of Samples 6-1 to 6-4.

The following can be understood from FIG. 24 and Table 6.
By forming the transparent conductive layer on the structure whose inclination angle is controlled, the difference ΔR in luminous reflectance can be suppressed. In addition, the absolute values of a * and b * can be reduced.

<7. Shape of structure>
In Samples 7-1 to 7-3, the relationship between the shape of the structure and the reflectance was examined by optical simulation using RCWA (Rigorous Coupled Wave Analysis).

(Sample 7-1)
The reflection spectrum of the transparent conductive element was obtained by optical simulation, and the reflection hues a * and b * were calculated from the reflection spectrum. The results are shown in FIG. 25A and Table 7.

The conditions for optical simulation are shown below.
(Configuration of transparent conductive element)
The transparent conductive element had the following laminated structure.
(Incident side) substrate / transparent conductive layer / optical layer (exit side)

(Substrate)
Refractive index n: 1.52
(Transparent conductive layer)
Refractive index n of transparent conductive layer: 2.0
Transparent conductive layer thickness t: 70 nm
(Resin layer on the exit surface side)
Refractive index n: 1.52
(Incident light)
Polarization: Non-polarization Incident angle: 5 degrees (relative to the normal of the transparent conductive element)

(Sample 7-2)
FIG. 26A is a cross-sectional view showing the thicknesses D1, D2, and D3 of the transparent conductive layer of Sample 7-2. In FIG. 26A, n ₁ , n _2, and n ₃ indicate a structure top, a structure slope, and a perpendicular direction between the structures, respectively. The film thickness D1, the film thickness D2, and the film thickness D3 are respectively the thickness of the transparent conductive layer in the perpendicular n ₁ direction at the top of the structure, the thickness of the transparent conductive layer in the perpendicular n ₂ direction on the structure slope, and the structure The thickness of the transparent conductive layer in the direction of the perpendicular n ₃ between the two is shown.

  The reflection spectrum of the transparent conductive element was obtained by optical simulation, and the reflection hues a * and b * were calculated from the reflection spectrum. The results are shown in FIG. 25B and Table 7.

The conditions for optical simulation are shown below.
(Configuration of transparent conductive element)
The transparent conductive element had the following laminated structure.
(Incident side) substrate / structure / transparent conductive layer / optical layer (exit side)

(Substrate)
Refractive index n: 1.52
(Structure)
Structure arrangement: square lattice Structure shape: square pyramid (bottom side length: 100 nm, top side length: 40 nm)
Bottom of structure: square Structure refractive index n: 1.52
Arrangement pitch P: 120 nm
Structure height H: 100 nm
Aspect ratio (H / P): 0.83

(Transparent conductive layer)
As shown in FIG. 26A, the transparent conductive layer is formed so that the thickness D1 of the transparent conductive layer in the perpendicular direction n _{1 at} the top of the structure and the thickness D2 of the transparent conductive layer in the perpendicular direction n _{2 at} the slope of the structure are 70 nm. Set.

Refractive index n of transparent conductive layer: 2.0
Thickness D1: 70 nm of transparent conductive layer on top of structure
Thickness D2 of transparent conductive layer on the slope of the structure: 70 nm
Film thickness ratio D3 / D1: 1 or more (resin layer on the exit surface side)
Refractive index n: 1.52
(Incident light)
Polarization: Non-polarization Incident angle: 5 degrees (relative to the normal of the transparent conductive element)

(Sample 7-3)
FIG. 26B is a cross-sectional view showing the thicknesses D1, D2, and D3 of the transparent conductive layer of Sample 7-3. In FIG. 26B, n ₀ indicates the perpendicular direction of the surface of the transparent conductive element (or the substrate surface). The film thickness D1, the film thickness D2, and the film thickness D3 are respectively the thickness of the transparent conductive layer in the perpendicular direction n _{0 at} the top of the structure, the thickness of the transparent conductive layer in the perpendicular direction n ₀ on the structure slope, and the structure The thickness of the transparent conductive layer in the perpendicular n ₀ direction is shown.

  Except for changing the following optical simulation conditions, an optical simulation was performed in the same manner as in Test Example 1, a reflection spectrum was obtained, and reflection hues a * and b * were calculated from the reflection spectrum. The results are shown in FIG. 25C and Table 7.

(Transparent conductive layer)
As shown in FIG. 26B, the thickness D1 of the transparent conductive layer in the perpendicular direction n _{0 at} the top of the structure, the thickness D2 of the transparent conductive layer in the perpendicular direction n ₀ on the slope of the structure, and the perpendicular direction n ₀ between the structures. The transparent conductive layer was set so that the thickness D3 of the transparent conductive layer was all 70 nm.

Refractive index n of transparent conductive layer: 2.0
Thickness D1: 70 nm of transparent conductive layer on top of structure
Thickness D3 of transparent conductive layer between structures: 70 nm
Film thickness ratio D3 / D1: 1

Table 7 shows the calculation results of luminous reflectance and transmission hue of Samples 7-1 to 7-3.

25A to 25C and Table 7 show the following.
In Sample 7-1 having a configuration in which a transparent conductive layer is formed on a flat surface, the absolute values of a * and b * are small, but the luminous reflectance is high.
In Sample 7-2 in which the transparent conductive layer is formed on the structure with a constant thickness, the luminous reflectance can be reduced to some extent, but the absolute values of a * and b * are increased.
In Sample 7-3 in which the transparent conductive layer is formed on the structure with a constant thickness in the direction perpendicular to the surface on which the structure is formed, the luminous reflectance can be reduced, but a *, b The absolute value of * increases.

<8. Electrode pattern distortion>
In Samples 8-1 and 8-2, the relationship between the presence / absence of the structure and the electrode pattern distortion was examined by actually producing a transparent conductive sheet.

(Sample 8-1)
An optical sheet was produced in the same manner as Sample 1-1 except that a plurality of the following structures were arranged on one main surface of the PET sheet.
Structure arrangement: hexagonal close-packed structure shape: truncated cone arrangement pitch P: 250 nm
Structure height H: 150 nm
Aspect ratio: 0.6
Inclined section average angle: 50deg

  Next, an ITO layer was formed on the surface of the PET sheet on which a plurality of structures were formed by sputtering.

The conditions for forming the ITO layer are shown below.
Gas type: Mixed gas of Ar gas and O ₂ gas Mixed gas mixture ratio (volume ratio): Ar: O ₂ = 200: 10
Film thickness of ITO layer: 30nm
Here, the film thickness of the ITO layer is the film thickness at the top of the structure.

Next, a transparent conductive sheet was produced by patterning the ITO layer to form a plurality of electrodes connected with diamond shapes. Next, the two transparent conductive sheets prepared as described above are ultraviolet-cured so that the surface on which the plurality of electrodes are formed is on the upper side and the diamond-shaped electrodes do not overlap each other. It bonded together by resin. Next, the transparent conductive sheet located on the upper side was bonded to a glass substrate having a refractive index of 1.5 via an adhesive sheet so that the surface on the ITO layer side was the surface side of the glass substrate.
As a result, the intended input element was obtained.

(Sample 8-2)
An input element was produced in the same manner as Sample 8-1 except that the formation of the structure was omitted and an ITO layer was formed on one flat main surface of the PET sheet.

(Pattern distortion evaluation)
A fluorescent lamp was imprinted on the surface of the input element produced as described above, and it was observed whether or not distortion corresponding to the electrode pattern was generated on the surface of the input element. As a result, no distortion was observed in sample 8-1, whereas distortion was observed in sample 8-2.

<9. Etching resistance>
(Sample 9-1)
(Transfer process)
An optical sheet was produced in the same manner as Sample 2-1, except that a plurality of the following structures were arranged on one main surface of the PET sheet.
Structure arrangement: hexagonal close-packed structure shape: bell-shaped Arrangement pitch P: 250 nm
Structure height H: 180 nm
Aspect ratio: 0.55
Average angle of slope: 55 degrees

(Film formation process)
Next, an ITO layer was formed on the surface of the PET sheet on which a plurality of structures were formed by sputtering.

The conditions for forming the ITO layer are shown below.
Gas type: Mixed gas of Ar gas and O ₂ gas Mixed gas mixture ratio (volume ratio): Ar: O ₂ = 200: 10
Film thickness of ITO layer: 30nm
Here, the film thickness of the ITO layer is the film thickness at the top of the structure.

(Annealing process)
Next, the PET sheet on which the ITO layer was formed was annealed at 150 ° C. for 120 minutes in the air. This promoted polycrystallization of the ITO layer. Next, when the ITO layer was measured by X-ray diffraction (XRD) in order to confirm the state of promotion, an In ₂ O ₃ peak was confirmed.
Thus, the intended transparent conductive sheet was produced.

(Sample 9-2)
(Transfer process, film formation process, annealing process)
First, a transfer film, a film forming process, and an annealing process were sequentially performed in the same manner as in Sample 9-1 to prepare a PET film having an annealed ITO layer.

(Etching process)
Next, the annealed PET film was immersed in a diluted solution of HCl 10% for 20 seconds to etch the ITO layer.

(Washing process)
Next, pure water cleaning was performed on the etched PET sheet.
Thus, the intended transparent conductive sheet was produced.

(Sample 9-3)
A transparent conductive sheet was produced in the same manner as Sample 9-2 except that the immersion time was changed to 40 seconds.

(Sample 9-4)
A transparent conductive sheet was produced in the same manner as Sample 9-2 except that the immersion time was changed to 60 seconds.

(Sample 9-5)
A transparent conductive sheet was produced in the same manner as Sample 9-2 except that the immersion time was changed to 100 seconds.

(Sample 10-1)
A transparent conductive sheet was produced in the same manner as Sample 9-1 except that a plurality of the following structures were arranged on one main surface of the PET sheet.
Structure arrangement: hexagonal close-packed structure shape: bell-shaped Arrangement pitch P: 200 nm
Structure height H: 180 nm
Aspect ratio: 0.62
Average angle of slope: 61 degrees

(Sample 10-2)
(Transfer process, film formation process, annealing process)
First, a transfer film, a film forming process, and an annealing process were sequentially performed in the same manner as in Sample 10-1, and a PET film having an ITO layer subjected to an annealing process was produced.

(Etching process)
Next, the annealed PET film was immersed in a diluted solution of HCl 10% for 20 seconds to etch the ITO layer.

(Washing process)
Next, pure water cleaning was performed on the etched PET sheet.
Thus, the intended transparent conductive sheet was produced.

(Sample 10-3)
A transparent conductive sheet was produced in the same manner as Sample 10-2 except that the immersion time was changed to 40 seconds.

(Sample 10-4)
A transparent conductive sheet was produced in the same manner as Sample 10-2 except that the immersion time was changed to 60 seconds.

(Sample 10-5)
A transparent conductive sheet was produced in the same manner as Sample 10-2 except that the immersion time was changed to 100 seconds.

(Surface resistance)
The surface resistance values of the transparent conductive sheet surfaces of Samples 9-1 to 10-5 obtained as described above were measured by a four-end needle method. The results are shown in Table 8 and FIG.

(Reciprocal of initial change rate)
The reciprocal number (change in virtual thickness) of the initial rate of change of the transparent conductive sheet surface of Samples 9-1 to 10-5 obtained as described above was obtained from the following equation. The results are shown in Table 9.
(Reciprocal of change rate with respect to initial surface resistance) = (Surface resistance of sample before etching) / (Surface resistance of sample after etching)

Table 8 shows the evaluation results of the surface resistance of the transparent conductive sheets according to Samples 9-1 to 10-5.

Table 9 shows the evaluation results of the reciprocal of the initial rate of change of the transparent conductive sheets according to Samples 9-1 to 10-5.

  Table 8 and Table 9 and FIG.

  When the average angle of the slope exceeds 60 degrees, the etching resistance of the ITO layer decreases, and the surface resistance tends to increase as the etching time elapses.

  As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, Various deformation | transformation based on the technical idea of this invention is possible.

  For example, the configurations, methods, processes, shapes, materials, numerical values, and the like given in the above-described embodiments are merely examples, and different configurations, methods, processes, shapes, materials, numerical values, and the like are used as necessary. Also good.

  The configurations, methods, steps, shapes, materials, numerical values, and the like of the above-described embodiments can be combined with each other without departing from the gist of the present invention.

DESCRIPTION OF SYMBOLS 1 Information input device 2 Optical layer (1st optical layer)
3 First electrode (X electrode)
3a 1st pad part 3b 1st connection part 4 2nd electrode (Y electrode)
4a 2nd pad part 4b 2nd connection part 5 Transparent insulating layer 6 Optical layer (2nd optical layer)
7 Bonding layer 8 Base 11 Extraction electrode 12 FPC
21 Substrate 22 Base layer 23 Structure Sw Wavefront

Claims (17)

An optical layer having a surface;
A plurality of first electrodes formed on the surface;
A plurality of second electrodes formed on the surface so as to intersect the first electrode;
A transparent insulating layer interposed at an intersection where the first electrode and the second electrode intersect,
The surface of the optical layer is a wavefront having an average wavelength equal to or less than the wavelength of visible light,
An information input device wherein the ratio (Am / λm) is in the range of 0.2 to 1.0, where λm is the average wavelength of the wavefront and Am is the average width of vibration of the wavefront. The first electrode includes a plurality of first unit electrode bodies and a plurality of first connection portions that connect the plurality of first unit electrode bodies to each other,
The second electrode includes a plurality of second unit electrode bodies and a plurality of second connecting portions that connect the plurality of second unit electrode bodies to each other,
At the intersection, the second connecting portion, the transparent insulating layer, and the first connecting portion are laminated on the surface in this order,
The information input device according to claim 1, wherein the first connecting portion connects the first unit electrode bodies across the transparent insulating layer. The first unit electrode body, the second unit electrode body, and the second connecting portion are transparent conductive layers mainly composed of a transparent conductive material,
The information input device according to claim 2, wherein the first connecting portion is a conductive layer mainly composed of a metal or a transparent conductive material. The average angle of the slope of the wavefront is in the range of 30 ° to 60 °,
When the film thickness of the transparent conductive layer at the position where the wavefront is highest is D1, and the film thickness of the transparent conductive layer at the position where the wavefront is lowest is D3, the ratio D3 / D1 is 0.8 or less. The information input device according to claim 3, which is within a range.   The information input device according to claim 3, wherein a film thickness of the transparent conductive layer at a position where the wavefront is highest is 100 nm or less.   The information input device according to claim 2, wherein the first unit electrode body and the second unit electrode body are formed so as to follow the wavefront.   The information input device according to claim 1, wherein the first electrode, the second electrode, and the transparent insulating layer are formed so as to follow the wavefront. The wavefront of the optical layer includes an electrode body forming region in which the first unit electrode body and the second unit electrode body are formed, and the first unit electrode body and the second unit electrode body. There is a wavefront exposed area where the wavefront is exposed between,
The information input device according to claim 2, wherein a reflectance difference ΔR between the electrode body forming region and the wavefront exposed region is 5% or less.   2. The information input device according to claim 1, wherein the reflected hue in the L * a * b * chromaticity system on the wavefront side is | a * | ≦ 10 and | b * | ≦ 10.   2. The information input device according to claim 1, wherein a transmission hue in an L * a * b * chromaticity system on a surface opposite to the wavefront is | a * | ≦ 10 and | b * | ≦ 10.   The information input device according to claim 1, further comprising an optical layer on a surface on which the first electrode and the second electrode are formed.   12. The information input device according to claim 11, wherein the transmitted hue in the L * a * b * chromaticity system on the surface opposite to the wavefront is | a * | ≦ 5 and | b * | ≦ 5.   The information input device according to claim 1, wherein an area of a flat portion of the wavefront is 50% or less. The average wavelength λm of the wavefront is 140 nm or more and 300 nm or less,
The information input device according to claim 1, wherein an average width Am of vibration of the wavefront is 28 nm or more and 300 nm or less. The wavefront is formed by a plurality of structures arranged in a plurality of rows,
The information input device according to claim 1, wherein the row has a linear shape or an arc shape. The wavefront is formed by a plurality of structures arranged in a plurality of rows,
The information input device according to claim 1, wherein the row is meandering. The structure forms a lattice pattern between adjacent columns,
16. The information input device according to claim 15, wherein the lattice pattern is at least one of a hexagonal lattice pattern, a quasi-hexagonal lattice pattern, a tetragonal lattice pattern, and a quasi-tetragonal lattice pattern.

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