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JP2012212125A - フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 - Google Patents

フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 Download PDF

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Publication number
JP2012212125A
JP2012212125A JP2012050414A JP2012050414A JP2012212125A JP 2012212125 A JP2012212125 A JP 2012212125A JP 2012050414 A JP2012050414 A JP 2012050414A JP 2012050414 A JP2012050414 A JP 2012050414A JP 2012212125 A JP2012212125 A JP 2012212125A
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JP
Japan
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exposure
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Pending
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JP2012050414A
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English (en)
Japanese (ja)
Inventor
Koichiro Yoshida
光一郎 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2012050414A priority Critical patent/JP2012212125A/ja
Publication of JP2012212125A publication Critical patent/JP2012212125A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • H10P76/4085—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
JP2012050414A 2011-03-24 2012-03-07 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 Pending JP2012212125A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012050414A JP2012212125A (ja) 2011-03-24 2012-03-07 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011066737 2011-03-24
JP2011066737 2011-03-24
JP2012050414A JP2012212125A (ja) 2011-03-24 2012-03-07 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法

Publications (1)

Publication Number Publication Date
JP2012212125A true JP2012212125A (ja) 2012-11-01

Family

ID=46858374

Family Applications (1)

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JP2012050414A Pending JP2012212125A (ja) 2011-03-24 2012-03-07 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法

Country Status (4)

Country Link
JP (1) JP2012212125A (zh)
KR (1) KR20120109408A (zh)
CN (1) CN102692816A (zh)
TW (1) TW201245813A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114513901A (zh) * 2022-01-06 2022-05-17 合肥颀材科技有限公司 一种线路板的制作方法、线路板及掩膜片

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103019042B (zh) * 2012-11-29 2015-01-07 上海华力微电子有限公司 改善高透光率掩膜板套刻精度稳定性的方法
CN103887157B (zh) * 2014-03-12 2021-08-27 京东方科技集团股份有限公司 光学掩膜板和激光剥离装置
CN106154773B (zh) * 2015-04-03 2019-03-29 中芯国际集成电路制造(上海)有限公司 修正图形的方法
CN105068375B (zh) * 2015-09-01 2017-05-31 深圳市华星光电技术有限公司 用于光配向的光罩及光配向方法
JP7420586B2 (ja) * 2019-03-28 2024-01-23 Hoya株式会社 フォトマスク、フォトマスクの製造方法、および表示装置の製造方法
KR102899465B1 (ko) 2021-01-28 2025-12-12 삼성디스플레이 주식회사 디스플레이 장치, 이를 제조하기 위한 마스크 및 디스플레이 장치의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006330691A (ja) * 2005-04-26 2006-12-07 Advanced Lcd Technologies Development Center Co Ltd ハーフトーンマスクを用いた露光方法
JP2007010845A (ja) * 2005-06-29 2007-01-18 Toppan Printing Co Ltd 画素形成方法及びカラーフィルタ
JP2009042753A (ja) * 2007-07-19 2009-02-26 Hoya Corp フォトマスク及びその製造方法、並びにパターン転写方法
JP2009278055A (ja) * 2008-04-16 2009-11-26 Seiko Epson Corp 露光時間の決定方法、マスクの作製方法及び半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3177948B2 (ja) * 1997-03-10 2001-06-18 日本電気株式会社 露光用フォトマスク
KR20000027776A (ko) * 1998-10-29 2000-05-15 김영환 액정 표시 장치의 제조방법
JP5224853B2 (ja) * 2008-02-29 2013-07-03 株式会社東芝 パターン予測方法、パターン補正方法、半導体装置の製造方法、及びプログラム
CN101382732B (zh) * 2008-10-20 2011-09-07 友达光电股份有限公司 制作图案化材料层的方法
JP5409238B2 (ja) * 2009-09-29 2014-02-05 Ｈｏｙａ株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006330691A (ja) * 2005-04-26 2006-12-07 Advanced Lcd Technologies Development Center Co Ltd ハーフトーンマスクを用いた露光方法
JP2007010845A (ja) * 2005-06-29 2007-01-18 Toppan Printing Co Ltd 画素形成方法及びカラーフィルタ
JP2009042753A (ja) * 2007-07-19 2009-02-26 Hoya Corp フォトマスク及びその製造方法、並びにパターン転写方法
JP2009278055A (ja) * 2008-04-16 2009-11-26 Seiko Epson Corp 露光時間の決定方法、マスクの作製方法及び半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114513901A (zh) * 2022-01-06 2022-05-17 合肥颀材科技有限公司 一种线路板的制作方法、线路板及掩膜片

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Publication number Publication date
CN102692816A (zh) 2012-09-26
TW201245813A (en) 2012-11-16
KR20120109408A (ko) 2012-10-08

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