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JP2012209005A - Magnetic head and magnetic storage device - Google Patents

Magnetic head and magnetic storage device Download PDF

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JP2012209005A
JP2012209005A JP2011075721A JP2011075721A JP2012209005A JP 2012209005 A JP2012209005 A JP 2012209005A JP 2011075721 A JP2011075721 A JP 2011075721A JP 2011075721 A JP2011075721 A JP 2011075721A JP 2012209005 A JP2012209005 A JP 2012209005A
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magnetic
magnetization
magnetic head
magnetization free
magnetization fixed
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JP5305547B2 (en
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Masahiko Ichimura
雅彦 市村
Kazuko Sugano
量子 菅野
Tomoyuki Hamada
智之 濱田
Teruo Takahashi
照生 孝橋
Sadamichi Maekawa
禎通 前川
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Hitachi Ltd
Japan Atomic Energy Agency
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Hitachi Ltd
Japan Atomic Energy Agency
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Abstract

PROBLEM TO BE SOLVED: To provide a magnetic head able to detect a magnetic field leaking from a recording medium without causing a sensing current to flow and able to cope with a high recording density medium.SOLUTION: The magnetic head comprises: a magnetization fixed part 51 in which magnetization is fixed; a magnetization free part 52 joined to the magnetization fixed part and changed in magnetization by an external magnetic field; and a pair of output terminals 56 and 57 connected to the magnetization fixed part and magnetization free part, one for each. A joint part 53 joining the magnetization fixed part and the magnetization free part composes a magnetic wall trap. Using a spin electromotive force resulting from the movement of a magnetic wall in the magnetization free part, a change in the external magnetic field is detected.

Description

本発明は、磁気ヘッド及びその磁気ヘッドを搭載した磁気記憶装置に関する。   The present invention relates to a magnetic head and a magnetic storage device equipped with the magnetic head.

磁気記憶装置では年々高記録密度化が進んでおり、再生ヘッドにも高記録密度に対応したものが求められている。この要求に応えるために、薄い非磁性層を2種の強磁性層で挟み込んで構成される磁気抵抗効果膜の膜面内に電流を流すCIP−GMR(Current in Plane-Giant Magneto-resistance)センサが開発され、再生ヘッドとして応用されてきた。現在では、積層膜の膜厚方向に電流を流して用いるTMR(Tunneling Magneto-Resistive)ヘッドや、CPP(Current Perpendicular to the Plane)−GMRヘッドへと移行しつつある。再生出力を高めるためには、MR(Magneto-Resistive)比を高めることが一般的であり、現在ではMR比が最も高いTMRヘッドが広く採用されている。
また、別の技術として、電子伝導性を有する磁性体からなるナノ構造体中での磁壁の移動を利用するメモリデバイスが特許文献2に開示されている。
Magnetic recording devices are becoming higher in recording density year by year, and a reproducing head corresponding to the higher recording density is required. In order to meet this demand, a CIP-GMR (Current in Plane-Giant Magneto-resistance) sensor is used in which a current flows in the surface of a magnetoresistive film formed by sandwiching a thin nonmagnetic layer between two types of ferromagnetic layers. Has been developed and applied as a read head. At present, a TMR (Tunneling Magneto-Resistive) head that uses a current flowing in the film thickness direction of a laminated film and a CPP (Current Perpendicular to the Plane) -GMR head are being transferred. In order to increase the reproduction output, it is common to increase the MR (Magneto-Resistive) ratio. At present, TMR heads with the highest MR ratio are widely used.
As another technique, Patent Document 2 discloses a memory device that uses the movement of a domain wall in a nanostructure made of a magnetic material having electron conductivity.

特開2003−204096号公報JP 2003-204096 Gazette WO 2007/015475 A1WO 2007/015475 A1

磁気記録媒体の高記録密度化に伴い、今後は、2Tb/inch2程度の面記録密度を有する磁気記録媒体に対応できる磁気再生ヘッドが必要とされる。2Tb/inch2の面記録密度を有する磁気記録媒体の場合、媒体表面における1ビット当たりの面積は17×17nm2程度と見積もられる。従って、磁気再生ヘッドに設けられる再生素子の媒体対向面における寸法もそれと同程度の寸法に微細化する必要がある。 Along with the increase in recording density of magnetic recording media, a magnetic reproducing head capable of supporting a magnetic recording medium having a surface recording density of about 2 Tb / inch 2 will be required in the future. In the case of a magnetic recording medium having a surface recording density of 2 Tb / inch 2 , the area per bit on the medium surface is estimated to be about 17 × 17 nm 2 . Therefore, it is necessary to reduce the size of the reproducing element provided in the magnetic reproducing head to the same size as the medium facing surface.

TMRヘッドやCPP−GMRヘッドでは、媒体からの漏洩磁界による抵抗変化を検出するためにセンス電流を流す必要がある。磁性体中に電流を流すと、特許文献2に記載のように、伝導電子のスピンにより磁性体の磁化が影響を受ける。つまり、センス電流自体により、磁気抵抗効果膜中の磁化自由層の磁化を変化させる力が作用する。TMRヘッドやCPP−GMRヘッドの素子部を上記のように微細化した場合、センス電流の伝導電子が磁化自由層に作用する力が、媒体の記録ビットからの漏洩磁界が磁化自由層に作用する力と拮抗し、媒体の記録磁化の検出に好ましくない影響を与える可能性がある。   In the TMR head and the CPP-GMR head, it is necessary to flow a sense current in order to detect a resistance change due to a leakage magnetic field from the medium. When a current is passed through the magnetic material, as described in Patent Document 2, the magnetization of the magnetic material is affected by the spin of conduction electrons. That is, a force that changes the magnetization of the magnetization free layer in the magnetoresistive film acts by the sense current itself. When the element part of the TMR head or CPP-GMR head is miniaturized as described above, the force that the conduction electrons of the sense current act on the magnetization free layer causes the leakage magnetic field from the recording bit of the medium to act on the magnetization free layer. It may antagonize the force and adversely affect the detection of the recording magnetization of the medium.

本発明は、新しい原理に基づき、センス電流を流すことなく、記録媒体からの漏洩磁界を検出でき、高記録密度の媒体に対応することのできる磁気ヘッドを提供するものである。   The present invention provides a magnetic head capable of detecting a leakage magnetic field from a recording medium without flowing a sense current and adapting to a high recording density medium based on a new principle.

本発明では、センス電流を流すことなく、磁性体中の磁壁の移動に伴うスピン起電力を用いて外部磁界の変化を検出する。
本発明の磁気ヘッドに用いられる再生素子は、磁化が固定された磁化固定部と、磁化固定部に接合され外部磁界によって磁化が変化する磁化自由部と、磁化固定部と磁化自由部にそれぞれ接続された一対の出力端子を備える。磁化固定部と磁化自由部の接合部は磁壁トラップを構成する。
In the present invention, the change in the external magnetic field is detected using the spin electromotive force accompanying the movement of the domain wall in the magnetic material without flowing a sense current.
The reproducing element used in the magnetic head of the present invention is connected to the magnetization fixed portion with fixed magnetization, the magnetization free portion joined to the magnetization fixed portion and changed in magnetization by an external magnetic field, and the magnetization fixed portion and the magnetization free portion, respectively. A pair of output terminals. The junction between the magnetization fixed part and the magnetization free part constitutes a domain wall trap.

本発明の再生素子は、センス電流を流さずに磁界の変化を検出できるので、伝導電子のスピンと磁性体スピンの相互作用の影響が無く、安定して磁化情報を読み取ることができる。
上記した以外の、課題、構成及び効果は、以下の実施形態の説明により明らかにされる。
Since the reproducing element of the present invention can detect a change in the magnetic field without passing a sense current, there is no influence of the interaction between the spin of the conduction electron and the magnetic substance spin, and the magnetization information can be read stably.
Problems, configurations, and effects other than those described above will be clarified by the following description of embodiments.

本発明の一実施例による磁気ヘッドの断面図。1 is a cross-sectional view of a magnetic head according to an embodiment of the present invention. マイクロ波発生器の構成例を示す模式図。The schematic diagram which shows the structural example of a microwave generator. 本発明による再生素子の一例を示す模式図。The schematic diagram which shows an example of the reproducing | regenerating element by this invention. 本発明の再生素子による磁界検出の原理を説明する図。The figure explaining the principle of the magnetic field detection by the reproducing | regenerating element of this invention. 媒体の記録磁化と本発明の再生素子からの出力の関係を説明する模式図。The schematic diagram explaining the relationship between the recording magnetization of a medium, and the output from the reproducing element of this invention. 本発明による再生素子の他の実施例の説明図。Explanatory drawing of the other Example of the reproducing | regenerating element by this invention. 本発明による再生素子の他の実施例の説明図。Explanatory drawing of the other Example of the reproducing | regenerating element by this invention. 本発明による再生素子の他の実施例の説明図。Explanatory drawing of the other Example of the reproducing | regenerating element by this invention. 本発明による再生素子の他の実施例の説明図。Explanatory drawing of the other Example of the reproducing | regenerating element by this invention. 本発明による再生素子の他の実施例の説明図。Explanatory drawing of the other Example of the reproducing | regenerating element by this invention. 磁気記憶装置の概略図。1 is a schematic diagram of a magnetic storage device.

以下、図面を参照して本発明の実施の形態を説明する。
図1は、本発明の一実施例による磁気ヘッドの断面図である。磁気ヘッドは、記録ヘッド10と再生ヘッド20を備える。記録ヘッド10は、主磁極11と補助磁極12の間に、磁性体からなるピラー13と絶縁体14が配置されている。主磁極11、補助磁極12、ピラー13はパーマロイ、CoFe合金などの軟磁性材料からなる。絶縁体14は、主磁極11、補助磁極12、ピラー13が磁気的につながる程度に薄く形成されている。主磁極11には、ヨーク部15に接してポール部16が設けられている。ポール部16は、端面がヘッド浮上面に現れている。ポール部16のトレーリング側には、磁界勾配を急峻にするためのトレーリングシールド17が設けられている。再生ヘッド20は、再生素子21と、これを挟み込む一対の磁気シールド22,23を有する。再生素子の詳細については、後述する。なお、図中の矢印LDはリーディング方向を指し、矢印TRはトレーリング方向を指す。
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a cross-sectional view of a magnetic head according to an embodiment of the present invention. The magnetic head includes a recording head 10 and a reproducing head 20. In the recording head 10, a pillar 13 and an insulator 14 made of a magnetic material are disposed between a main magnetic pole 11 and an auxiliary magnetic pole 12. The main magnetic pole 11, the auxiliary magnetic pole 12, and the pillar 13 are made of a soft magnetic material such as permalloy or a CoFe alloy. The insulator 14 is formed thin enough to magnetically connect the main magnetic pole 11, the auxiliary magnetic pole 12, and the pillar 13. The main magnetic pole 11 is provided with a pole portion 16 in contact with the yoke portion 15. An end surface of the pole portion 16 appears on the head air bearing surface. A trailing shield 17 is provided on the trailing side of the pole portion 16 to make the magnetic field gradient steep. The reproducing head 20 has a reproducing element 21 and a pair of magnetic shields 22 and 23 sandwiching the reproducing element 21. Details of the reproducing element will be described later. In the figure, the arrow LD indicates the reading direction, and the arrow TR indicates the trailing direction.

ポール部16のトレーリング側には、マイクロ波発生器30を構成する磁性膜が形成されている。マイクロ波発生器30を構成する磁性膜は、磁気記録媒体40に局所的にマイクロ波を照射することで、その照射箇所に磁気共鳴を励起し、磁化方向の反転しやすさを高める。マイクロ波励起電流は、ポール部16から、マイクロ波発生器30を通して補助磁極12に流される。例えば矢印18a,18bのように流される。磁気記録媒体40としては、垂直磁気記録媒体を用いることができる。   A magnetic film constituting the microwave generator 30 is formed on the trailing side of the pole portion 16. The magnetic film constituting the microwave generator 30 irradiates the magnetic recording medium 40 with microwaves locally, thereby exciting magnetic resonance at the irradiated portion and increasing the ease of reversing the magnetization direction. The microwave excitation current flows from the pole portion 16 to the auxiliary magnetic pole 12 through the microwave generator 30. For example, the flow is as indicated by arrows 18a and 18b. As the magnetic recording medium 40, a perpendicular magnetic recording medium can be used.

図2は、マイクロ波発生器30の構成例を示す模式図である。マイクロ波発生器30は、垂直磁気異方性体31、磁化高速回転体32、スピン伝導層33、スピン注入層34、スピン伝導層35を積層した構造を有する。マイクロ波発生器30は、主磁極のポール部16及びトレーリングシールド17と電気的に接続されており、主磁極側からトレーリングシールド側、あるいはその逆の方向にマイクロ波励起電流が流される。垂直磁気異方性体31としては、六方晶CoCrPtなどが用いられる。磁化高速回転体32は、飽和磁化が大きく、結晶磁気異方性がほとんどない厚さにしたCoFe合金などが使われる。スピン伝導層35及びスピン伝導層33には、Ruやスピン伝導性の高い金属非磁性体であるCu等を用いることができる。スピン注入層34には、CoPtなどの垂直磁気異方性体が用いられる。磁化高速回転体32では、層に沿った面内で磁化が高速回転し、浮上面に出現する磁極からの漏れ磁界が、マイクロ波(高周波磁界)として作用する。   FIG. 2 is a schematic diagram illustrating a configuration example of the microwave generator 30. The microwave generator 30 has a structure in which a perpendicular magnetic anisotropy 31, a magnetization high-speed rotator 32, a spin conduction layer 33, a spin injection layer 34, and a spin conduction layer 35 are stacked. The microwave generator 30 is electrically connected to the pole portion 16 of the main magnetic pole and the trailing shield 17, and a microwave excitation current flows from the main magnetic pole side to the trailing shield side or vice versa. As the perpendicular magnetic anisotropy 31, hexagonal CoCrPt or the like is used. For the high-speed magnetization rotator 32, a CoFe alloy or the like having a thickness with a large saturation magnetization and almost no magnetocrystalline anisotropy is used. For the spin conduction layer 35 and the spin conduction layer 33, Ru or Cu, which is a metal nonmagnetic material with high spin conductivity, can be used. For the spin injection layer 34, a perpendicular magnetic anisotropy such as CoPt is used. In the magnetization high-speed rotating body 32, the magnetization rotates at high speed in a plane along the layer, and the leakage magnetic field from the magnetic pole appearing on the air bearing surface acts as a microwave (high-frequency magnetic field).

主磁極11は、主磁極11と補助磁極12を含む磁気回路に巻回されたコイル19により励磁され、ポール部16の端面から記録磁界を発する。ポール部16から発生された記録磁界は、磁気ディスク40の磁気記録層41及び中間層42を垂直に貫き、軟磁性裏打ち層43を通って、補助磁極12に吸収される。磁気記録層41には、ポール部16から発生された記録磁界の印加と共に、マイクロ波発生器30から発生されたマイクロ波が照射され、記録磁化が書き込まれる。磁気記録層41は磁気異方性が大きく、主磁極11からの記録磁界とマイクロ波発生器30から放射されるマイクロ波磁界とが揃わないと記録できない。   The main magnetic pole 11 is excited by a coil 19 wound around a magnetic circuit including the main magnetic pole 11 and the auxiliary magnetic pole 12 and emits a recording magnetic field from the end face of the pole portion 16. The recording magnetic field generated from the pole portion 16 passes through the magnetic recording layer 41 and the intermediate layer 42 of the magnetic disk 40 vertically, passes through the soft magnetic backing layer 43, and is absorbed by the auxiliary magnetic pole 12. The magnetic recording layer 41 is irradiated with the microwave generated from the microwave generator 30 along with the application of the recording magnetic field generated from the pole portion 16, and the recording magnetization is written. The magnetic recording layer 41 has a large magnetic anisotropy, and recording cannot be performed unless the recording magnetic field from the main pole 11 and the microwave magnetic field radiated from the microwave generator 30 are aligned.

図3は、本発明による再生素子の一例を示す模式図である。本発明の再生素子は、磁化固定部51と磁化自由部52とが平面的に接合された構造を有する。磁化固定部51と磁化自由部52は、段差を設けたシリコン基板54上に磁性膜55としてパーマロイを成膜することで形成した。また、磁化固定部51と磁化自由部52は、いずれも接合部53に向かって徐々に幅が狭くなる形状とされ、接合部53が最も幅の狭い狭窄部となっている。接合部53の位置を基板54の段差形成位置と一致させることで、磁化固定部51の膜厚を磁化自由部52の膜厚より厚く設定した。接合部53を挟むように電圧検出用の端子56,57が、典型的には磁化固定部51の上端部と磁化自由部52の下端部に電気的に接続されている。   FIG. 3 is a schematic view showing an example of a reproducing element according to the present invention. The reproducing element of the present invention has a structure in which the magnetization fixed portion 51 and the magnetization free portion 52 are joined in a plane. The magnetization fixed portion 51 and the magnetization free portion 52 were formed by depositing permalloy as a magnetic film 55 on a silicon substrate 54 provided with a step. In addition, the magnetization fixed portion 51 and the magnetization free portion 52 are both shaped so that the width gradually decreases toward the junction portion 53, and the junction portion 53 is the narrowest narrow portion. The film thickness of the magnetization fixed part 51 was set larger than the film thickness of the magnetization free part 52 by matching the position of the joint part 53 with the step forming position of the substrate 54. The voltage detection terminals 56 and 57 are typically electrically connected to the upper end portion of the magnetization fixed portion 51 and the lower end portion of the magnetization free portion 52 so as to sandwich the joint portion 53.

磁化固定部51の磁化は一方向に固定されていて外部磁界によって変化しない。図示の実施例の場合には、磁化固定部51の磁化は磁化固定部51と磁化自由部52を結ぶ方向に固定されている。一方、磁化自由部52の磁化は外部磁界の影響を受けて変化することができる。磁化固定部51と磁化自由部52の接合部53は、磁壁トラップを構成している。   The magnetization of the magnetization fixed part 51 is fixed in one direction and does not change with an external magnetic field. In the case of the illustrated embodiment, the magnetization of the magnetization fixed portion 51 is fixed in the direction connecting the magnetization fixed portion 51 and the magnetization free portion 52. On the other hand, the magnetization of the magnetization free portion 52 can change under the influence of an external magnetic field. The junction 53 between the magnetization fixed part 51 and the magnetization free part 52 constitutes a domain wall trap.

本実施例では磁化固定部51と磁化自由部52を共にパーマロイで形成したが、それぞれ異なる磁性材料で形成してもよい。本実施例の磁化自由部52は膜厚を10nm、底部のX方向の長さを25nm、Z方向の長さを100nmとし、磁化固定部51は膜厚を20nm、上部のX方向の長さを60nm、Z方向の長さを300nmとし、接合部53はX方向の長さを20nmとした。微細加工を要する接合部53のX方向長さは微細加工技術の寸法限界で決まる。また、磁化自由部52の膜厚は、磁化の面内異方性を有する厚さとして3nm以上が望ましい。磁化自由部52の他の寸法は、超常磁性限界として知られるKu×V=60(ここでKuは磁化自由部52をなす磁性体の一軸異方性エネルギー、Vは、磁化自由部52をなす磁性体の体積)を満たすよう構成される。また、磁壁が接合部53に導入され必ずトラップされることを考慮すると、磁化固定部51は磁化自由部52より大きいことが望ましく、好ましくは、磁化固定部のZの寸法を磁化自由部のZの寸法の3〜5倍程度とするのがよい。   In this embodiment, the magnetization fixed portion 51 and the magnetization free portion 52 are both formed of permalloy, but may be formed of different magnetic materials. In this embodiment, the magnetization free part 52 has a film thickness of 10 nm, the bottom in the X direction has a length of 25 nm, the Z direction has a length of 100 nm, and the magnetization fixed part 51 has a film thickness of 20 nm and the top in the X direction. Was 60 nm, the length in the Z direction was 300 nm, and the length of the junction 53 in the X direction was 20 nm. The length in the X direction of the joint 53 that requires fine processing is determined by the dimensional limit of the fine processing technology. The thickness of the magnetization free portion 52 is desirably 3 nm or more as the thickness having in-plane anisotropy of magnetization. Another dimension of the magnetization free part 52 is Ku × V = 60, which is known as the superparamagnetic limit (where Ku is the uniaxial anisotropy energy of the magnetic material forming the magnetization free part 52, and V is the magnetization free part 52. It is configured to satisfy the volume of the magnetic material. In consideration of the fact that the domain wall is introduced into the junction 53 and always trapped, it is desirable that the magnetization fixed portion 51 is larger than the magnetization free portion 52. Preferably, the Z dimension of the magnetization fixed portion is set to Z of the magnetization free portion. It is good to set it as about 3 to 5 times the size of.

磁化自由部52の磁化の変化は、磁化自由部52内での磁壁の移動の結果と考えることができる。例えば、図3の状態では、磁化固定部51は下向きの磁化を有し、磁化自由部52は上向きの磁化を有しており、両者の境界である接合部53に磁壁が存在する。このとき再生素子に下向きの外部磁界が印加されると、接合部53にあった磁壁は下方に移動し、接合部53と下方に移動した磁壁の間の磁化自由部の磁化は上向きから下向きに反転する。最終的に磁壁は磁化自由部52の下端に達し、磁化自由部52全体の磁化が下向きに揃う。次に、磁化固定部51の磁化と磁化自由部52の磁化が下向きに揃ったその状態で、上向きの外部磁界が印加されると、磁化自由部52の下端領域に磁壁が発生し、それが上方に移動する。上方に移動した磁壁は磁壁トラップに達すると、そこで止まり、それより上の磁化固定部51には侵入しない。こうして、磁化自由部52の磁化は、図3に示した上向きの状態に戻る。   The change in the magnetization of the magnetization free part 52 can be considered as a result of the movement of the domain wall in the magnetization free part 52. For example, in the state of FIG. 3, the magnetization fixed part 51 has downward magnetization, the magnetization free part 52 has upward magnetization, and a domain wall exists in the junction part 53 which is a boundary of both. At this time, when a downward external magnetic field is applied to the reproducing element, the domain wall located at the junction 53 moves downward, and the magnetization of the magnetization free portion between the junction 53 and the domain wall moved downward is directed downward from above. Invert. Finally, the domain wall reaches the lower end of the magnetization free portion 52, and the magnetization of the entire magnetization free portion 52 is aligned downward. Next, when an upward external magnetic field is applied in a state where the magnetization of the magnetization fixed portion 51 and the magnetization of the magnetization free portion 52 are aligned downward, a domain wall is generated in the lower end region of the magnetization free portion 52, which is Move upward. When the domain wall moved upward reaches the domain wall trap, it stops there and does not enter the magnetization fixed portion 51 above it. Thus, the magnetization of the magnetization free part 52 returns to the upward state shown in FIG.

図4は、本発明の再生素子による磁界検出の原理を説明する図である。
ここでは垂直磁気記録媒体用の磁気ヘッドに搭載される再生素子について説明する。磁化自由部は媒体に面する磁気ヘッドの浮上面側に配置され、磁化固定部は磁化自由部より浮上面から遠い位置に配置される。上述のように、磁化自由部52の磁化の変化は、磁化自由部52内での磁壁の移動である。このとき、磁化自由部52内の各位置におけるスピンは回転するが、媒体からの磁場や熱揺らぎによる歳差運動を伴う。このスピンの運動を単位球面上にマップしたとき、例えばスピン回転の始状態を北極、終状態を南極に対応させれば、単位球面上におけるスピンの運動は北極から南極へ至る測地線を描くものではなく、有限の立体角をなす。この立体角がスピンの持つBerry位相であり、スピン起電力として観測にかかる物理量となる。
スピンBerry位相は、(スピン)波動関数の持つトポロジカルな性質によるのであるが、直観的には次のようなエネルギー保存則の見方ができる。磁化自由部52の磁化は媒体の磁場により、エネルギーの低い安定な方向を向く。つまり安定な方向を向く以前は、エネルギーの高い状態にあったことになる。この磁気的なエネルギー差が起電力として電気エネルギーとして放出されることになる。媒体の磁化状態に変化がない場合、当然のことながら磁化自由部52の磁化状態も変化せず、起電力も検出されない。この場合は、隣接したビットに同じシグナルが記録されていることを意味する。
FIG. 4 is a diagram for explaining the principle of magnetic field detection by the reproducing element of the present invention.
Here, a reproducing element mounted on a magnetic head for a perpendicular magnetic recording medium will be described. The magnetization free part is arranged on the air bearing surface side of the magnetic head facing the medium, and the magnetization fixed part is arranged at a position farther from the air bearing surface than the magnetization free part. As described above, the change in magnetization of the magnetization free part 52 is the movement of the domain wall in the magnetization free part 52. At this time, the spin at each position in the magnetization free portion 52 rotates but is accompanied by precession due to the magnetic field from the medium and thermal fluctuation. When this spin motion is mapped onto the unit sphere, for example, if the spin rotation start state corresponds to the North Pole and the final state corresponds to the South Pole, the spin motion on the unit sphere draws a geodesic line from the North Pole to the South Pole. Instead, it has a finite solid angle. This solid angle is the Berry phase of the spin, and is a physical quantity for observation as a spin electromotive force.
The spin Berry phase is based on the topological property of the (spin) wave function, but intuitively, the following energy conservation law can be seen. The magnetization of the magnetization free part 52 is directed in a stable direction with low energy by the magnetic field of the medium. In other words, before turning to a stable direction, it was in a state of high energy. This magnetic energy difference is released as electric energy as an electromotive force. When there is no change in the magnetization state of the medium, naturally, the magnetization state of the magnetization free portion 52 does not change, and no electromotive force is detected. In this case, it means that the same signal is recorded in adjacent bits.

図5は、媒体の記録磁化と本発明の再生素子からの出力の関係を説明する模式図である。
磁気ヘッドが矢印方向に移動するとき、再生素子の磁化自由部の磁化は、磁気記録媒体に記録された記録磁化からの漏洩磁束の影響を受けて、再生素子の直下の記録磁化の向きと同じ向きに変化する。そのとき、図4により説明した原理によって電気出力が得られる。こうして、本発明の再生素子の場合、垂直磁気記録媒体の記録磁化が上向きから下向きあるいは下向きから上向きに変化する磁化遷移領域の上を走行するとき出力が得られる。記録磁化が上向きから下向きに変化するときと、下向きから上向きに変化するときとでは、図示するように出力信号の符号が逆になる。この出力信号と記録磁化の関係は、従来の誘導型再生ヘッドの出力と同じであるため、誘導型再生ヘッドの信号処理に用いられる回路と同等の回路を用いることによって記録信号を再生することができる。
FIG. 5 is a schematic diagram for explaining the relationship between the recording magnetization of the medium and the output from the reproducing element of the present invention.
When the magnetic head moves in the direction of the arrow, the magnetization of the magnetization free portion of the reproducing element is affected by the leakage magnetic flux from the recording magnetization recorded on the magnetic recording medium, and is the same as the direction of the recording magnetization immediately below the reproducing element. Change in direction. At that time, an electrical output is obtained according to the principle described with reference to FIG. Thus, in the case of the reproducing element of the present invention, an output is obtained when the recording magnetization of the perpendicular magnetic recording medium travels on the magnetization transition region where the recording magnetization changes from upward to downward or from downward to upward. When the recording magnetization changes from upward to downward and when it changes from downward to upward, the sign of the output signal is reversed as shown in the figure. Since the relationship between the output signal and the recording magnetization is the same as the output of the conventional induction reproducing head, the recording signal can be reproduced by using a circuit equivalent to the circuit used for the signal processing of the induction reproducing head. it can.

以下に、再生素子の別の実施例について説明する。図3に示した再生素子は、磁化固定部と磁化自由部の間に磁壁の移動を止める磁壁トラップを構成するための構造として、磁化固定部と磁化自由部に膜厚差を設ける構造と、磁化固定部と磁化自由部の接合部を幅の狭い狭窄部とする構造とを併用したものになっている。しかし、必ずしもこれらの構造を併用する必要はない。   Hereinafter, another embodiment of the reproducing element will be described. The reproducing element shown in FIG. 3 has a structure in which a film thickness difference is provided between the magnetization fixed part and the magnetization free part as a structure for configuring a domain wall trap that stops the movement of the domain wall between the magnetization fixed part and the magnetization free part. This is a combination of a structure in which the junction between the magnetization fixed portion and the magnetization free portion is a narrow constriction portion. However, it is not always necessary to use these structures in combination.

図6は、本発明による再生素子の他の実施例の説明図である。
本実施例の再生素子は、磁化固定部51と磁化自由部52の接合部53を幅の最も狭い狭窄部とする構造によって、接合部53を磁壁トラップとしたものである。本実施例では、磁化固定部51と磁化自由部52は、平らなシリコン基板54上に磁性膜55としてパーマロイを20nm成膜することで形成した。磁性膜55には、パーマロイ以外にFe、Co、Ni、およびそれらの合金を用いてもよい。磁化自由部52は、底部のX方向の長さを25nm、Z方向の長さを100nmとした。磁化固定部51は、上部のX方向の長さを60nm、Z方向の長さを300nmとした。接合部53はX方向の長さを20nmとした。図3の構造における記載と同様、デバイス幅の最も狭い部分は、接合部53のX方向の長さで、微細加工技術の寸法限界で決まる。また、図6の構造では、磁化固定部51と磁化自由部52は同一の厚さであり、磁化の面内異方性を有する厚さとした。
FIG. 6 is an explanatory diagram of another embodiment of a reproducing element according to the present invention.
In the reproducing element of this example, the junction 53 is a domain wall trap by a structure in which the junction 53 of the magnetization fixed portion 51 and the magnetization free portion 52 is the narrowest narrow portion. In this example, the magnetization fixed part 51 and the magnetization free part 52 were formed by depositing a permalloy film of 20 nm as a magnetic film 55 on a flat silicon substrate 54. In addition to permalloy, Fe, Co, Ni, and alloys thereof may be used for the magnetic film 55. The magnetization free portion 52 has a bottom portion with a length in the X direction of 25 nm and a length in the Z direction of 100 nm. The magnetization fixed portion 51 has an upper X-direction length of 60 nm and a Z-direction length of 300 nm. The junction 53 has a length in the X direction of 20 nm. Similar to the description in the structure of FIG. 3, the narrowest part of the device width is the length of the bonding portion 53 in the X direction and is determined by the size limit of the microfabrication technology. In the structure of FIG. 6, the magnetization fixed portion 51 and the magnetization free portion 52 have the same thickness and a thickness having in-plane anisotropy of magnetization.

図7は、本発明による再生素子の他の実施例の説明図である。
本実施例の再生素子は、磁化固定部51と磁化自由部52の磁性膜に膜厚差を設け、接合部53に段差を形成することにより、接合部53を磁壁トラップとしたものである。本実施例では、磁化固定部51と磁化自由部52は、段差を形成したシリコン基板54上に磁性膜55としてパーマロイを成膜することで形成した。磁性膜55には、パーマロイ以外にFe、Co、Ni、およびそれらの合金を用いてもよい。磁化自由部52は、膜厚を20nm、X方向の長さを20nm、Z方向の長さを100nmとした。磁化固定部51は、膜厚を40nm、X方向の長さを20nm、Z方向の長さを300nmとした。図7の構造においてはデバイスの幅(X方向の長さ)は同一であり、図3の構造における記載と同様、微細加工技術の寸法限界で決まる。
FIG. 7 is an explanatory diagram of another embodiment of a reproducing element according to the present invention.
In the reproducing element of the present embodiment, a difference in film thickness is provided between the magnetic films of the magnetization fixed portion 51 and the magnetization free portion 52, and a step is formed in the junction 53 so that the junction 53 is a domain wall trap. In this embodiment, the magnetization fixed portion 51 and the magnetization free portion 52 are formed by depositing permalloy as the magnetic film 55 on the silicon substrate 54 on which the step is formed. In addition to permalloy, Fe, Co, Ni, and alloys thereof may be used for the magnetic film 55. The magnetization free part 52 had a film thickness of 20 nm, a length in the X direction of 20 nm, and a length in the Z direction of 100 nm. The magnetization fixed portion 51 has a film thickness of 40 nm, a length in the X direction of 20 nm, and a length in the Z direction of 300 nm. In the structure of FIG. 7, the width of the device (the length in the X direction) is the same, and is determined by the dimensional limit of the microfabrication technology as described in the structure of FIG.

図8は、本発明による再生素子の他の実施例の説明図である。
本実施例の再生素子は、磁化固定部51の磁性膜55aの保磁力を磁化自由部52の磁性膜55bの保磁力より大きく設定することにより、2つの磁性膜の境界部である接合部53を磁壁トラップとしたものである。本実施例では、磁化固定部51を構成する磁性膜55aの材料としてCoを用い、磁化自由部52を構成する磁性膜55bの材料としてパーマロイを用い、平らなシリコン基板の上にそれぞれ膜厚が20nmとなるように形成した。磁性膜55aの保磁力の目安となる結晶磁気異方性エネルギー(密度)は50KJ/m、磁性膜55bの結晶磁気異方性エネルギー(密度)はほぼゼロである。磁性膜55aと磁性膜55bは、50Oe程度以上の保磁力差を生じるものであれば他の材料の組み合わせでもよく、例えばFeとパーマロイ、FePtとパーマロイを組み合わせてもよい。磁化自由部52は、X方向の長さを20nm、Z方向の長さを100nmとした。磁化固定部51は、X方向の長さを20nm、Z方向の長さを200nmとした。。
FIG. 8 is an explanatory diagram of another embodiment of a reproducing element according to the present invention.
In the reproducing element of this embodiment, the coercive force of the magnetic film 55a of the magnetization fixed part 51 is set larger than the coercive force of the magnetic film 55b of the magnetization free part 52, whereby the junction part 53 that is a boundary part between the two magnetic films is formed. Is a domain wall trap. In the present embodiment, Co is used as the material of the magnetic film 55a constituting the magnetization fixed portion 51, and Permalloy is used as the material of the magnetic film 55b constituting the magnetization free portion 52. It formed so that it might be set to 20 nm. The magnetocrystalline anisotropy energy (density), which is a measure of the coercive force of the magnetic film 55a, is 50 KJ / m 3 , and the magnetocrystalline anisotropy energy (density) of the magnetic film 55b is almost zero. The magnetic film 55a and the magnetic film 55b may be a combination of other materials as long as they produce a coercive force difference of about 50 Oe or more. For example, Fe and permalloy, or FePt and permalloy may be combined. The magnetization free portion 52 has a length in the X direction of 20 nm and a length in the Z direction of 100 nm. The magnetization fixed portion 51 has a length in the X direction of 20 nm and a length in the Z direction of 200 nm. .

図9は、本発明による再生素子の他の実施例の説明図である。
本実施例の再生素子は、磁化固定部51と磁化自由部52を直線的にではなく、角度を持たせて接合することにより、屈曲した接合部53を磁壁トラップとしたものである。本実施例では、磁化固定部51と磁化自由部52は、平らなシリコン基板54上に磁性膜55としてパーマロイを20nm成膜することで形成した。磁性膜55には、パーマロイ以外にFe、Co、Ni、およびそれらの合金を用いてもよい。磁化自由部52は、X方向の長さを20nm、中心軸のZ方向の長さを100nmとした。磁化固定部51は、X方向の中心軸の長さを200nm、Z方向の長さを20nmとした。本実施例では、磁化固定部51の中心軸と磁化自由部52の中心軸のなす屈折角度θは90度とした。屈折角度θは、60〜120度の範囲が好ましい。
FIG. 9 is an explanatory diagram of another embodiment of the reproducing element according to the present invention.
In the reproducing element of this embodiment, the magnetization fixed portion 51 and the magnetization free portion 52 are bonded not at a straight line but at an angle so that the bent bonded portion 53 is a domain wall trap. In this example, the magnetization fixed part 51 and the magnetization free part 52 were formed by depositing a permalloy film of 20 nm as a magnetic film 55 on a flat silicon substrate 54. In addition to permalloy, Fe, Co, Ni, and alloys thereof may be used for the magnetic film 55. The magnetization free portion 52 has a length in the X direction of 20 nm and a central axis in the Z direction of 100 nm. In the magnetization fixed portion 51, the length of the central axis in the X direction is 200 nm, and the length in the Z direction is 20 nm. In this embodiment, the refraction angle θ formed by the central axis of the magnetization fixed portion 51 and the central axis of the magnetization free portion 52 is 90 degrees. The refraction angle θ is preferably in the range of 60 to 120 degrees.

図10は、本発明による再生素子の他の実施例の説明図である。
本実施例の再生素子は、磁化固定部51と磁化自由部52を構成する磁性膜55の下地膜として反強磁性膜を形成したものである。磁化自由部52は体積が小さいため熱的に不安定になり、磁化方向が乱れランダムな方向を向いてしまう可能性がある。本実施例では、基板54上に反強磁性膜からなる下地膜58を形成し、その上に磁化固定部51と磁化自由部52を構成する磁性膜55を形成することで、磁性膜55、特に磁化自由部52を構成する磁性膜に一軸異方性を付与し、磁化自由部52の磁化方向が熱的に不安定になることを抑制する。反強磁性膜としては、MnIr,MnPtなどを、10nm程度の膜厚に形成して用いればよい。
FIG. 10 is an explanatory diagram of another embodiment of the reproducing element according to the present invention.
In the reproducing element of this example, an antiferromagnetic film is formed as a base film of the magnetic film 55 constituting the magnetization fixed part 51 and the magnetization free part 52. Since the magnetization free portion 52 has a small volume, it becomes thermally unstable, and there is a possibility that the magnetization direction is disturbed and faces a random direction. In the present embodiment, the base film 58 made of an antiferromagnetic film is formed on the substrate 54, and the magnetic film 55 constituting the magnetization fixed portion 51 and the magnetization free portion 52 is formed thereon, whereby the magnetic film 55, In particular, uniaxial anisotropy is imparted to the magnetic film constituting the magnetization free portion 52 to suppress the magnetization direction of the magnetization free portion 52 from becoming thermally unstable. As the antiferromagnetic film, MnIr, MnPt or the like may be formed to a thickness of about 10 nm.

図10には、図6で説明した再生素子に反強磁性体からなる下地膜58を形成した例を示したが、他の実施例の再生素子においても磁性膜の下地膜として反強磁性膜を用いることで同様の効果を得ることができる。   FIG. 10 shows an example in which the base film 58 made of an antiferromagnetic material is formed on the reproducing element described with reference to FIG. 6. However, in the reproducing element of another embodiment, an antiferromagnetic film is used as the base film of the magnetic film. The same effect can be obtained by using.

図11は磁気記憶装置の概略図であり、図11(a)はその概略平面図、図11(b)は略断面図である。この磁気記憶装置は、垂直磁気記録媒体60、これを回転駆動する駆動部61、磁気ヘッド62、その駆動手段であるボイスコイルモータ63、磁気ヘッドの記録再生信号処理手段65を備える。磁気ヘッド62は、上述した本発明の磁気ヘッドである。磁気ヘッド62はジンバル64の先端に装着され、ボイスコイルモータ63によって垂直磁気記録媒体60に対して相対的に駆動されて所望のトラック上に位置決めされる。ホストから送信されてきた記録信号は、信号処理回路65を介して磁気ヘッド62の記録ヘッドに送られ、垂直磁気記録媒体60に磁化反転を生じさせて記録される。また、垂直磁気記録媒体60の記録磁化による漏洩磁界は磁気ヘッド62に組み込まれた本発明の再生素子によって検出され、検出された信号は信号処理回路65で処理された後、再生信号としてホストに送信される。   FIG. 11 is a schematic diagram of a magnetic memory device, FIG. 11 (a) is a schematic plan view thereof, and FIG. 11 (b) is a schematic cross-sectional view thereof. This magnetic storage device includes a perpendicular magnetic recording medium 60, a drive unit 61 that rotationally drives it, a magnetic head 62, a voice coil motor 63 that is a drive means thereof, and a recording / reproduction signal processing means 65 of the magnetic head. The magnetic head 62 is the above-described magnetic head of the present invention. The magnetic head 62 is attached to the tip of the gimbal 64 and is driven relative to the perpendicular magnetic recording medium 60 by the voice coil motor 63 to be positioned on a desired track. The recording signal transmitted from the host is sent to the recording head of the magnetic head 62 via the signal processing circuit 65 and recorded on the perpendicular magnetic recording medium 60 by causing magnetization reversal. Further, the leakage magnetic field due to the recording magnetization of the perpendicular magnetic recording medium 60 is detected by the reproducing element of the present invention incorporated in the magnetic head 62, and the detected signal is processed by the signal processing circuit 65 and then sent to the host as a reproduced signal. Sent.

なお、本発明は上記した実施例に限定されるものではなく、様々な変形例が含まれる。例えば、上記した実施例は本発明を分かりやすく説明するために詳細に説明したものであり、必ずしも説明した全ての構成を備えるものに限定されるものではない。また、ある実施例の構成の一部を他の実施例の構成に置き換えることが可能であり、また、ある実施例の構成に他の実施例の構成を加えることも可能である。また、各実施例の構成の一部について、他の構成の追加・削除・置換をすることが可能である。   In addition, this invention is not limited to an above-described Example, Various modifications are included. For example, the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described. In addition, a part of the configuration of a certain embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of a certain embodiment. Further, it is possible to add, delete, and replace other configurations for a part of the configuration of each embodiment.

例えば、図3から図10の実施例によって説明した各構成を適宜組み合わせて再生素子を製造することができるのは明かである。逐一説明はしないが、例えば、図9に示した再生素子に、図7に示した構成を適用して磁化固定部51の膜厚を磁化自由部52の膜厚より厚く設定することで、より安定に作動する再生素子を得ることができる。更に、それに図8に示した構成を適用して、磁化固定部51に磁化自由部52よりも保磁力の大きな磁性膜を用いてもよい。   For example, it is apparent that a reproducing element can be manufactured by appropriately combining the components described in the embodiments of FIGS. Although not described one by one, for example, by applying the configuration shown in FIG. 7 to the reproducing element shown in FIG. 9 and setting the film thickness of the magnetization fixed portion 51 to be larger than the film thickness of the magnetization free portion 52, A reproducing element that operates stably can be obtained. Furthermore, a magnetic film having a larger coercive force than the magnetization free portion 52 may be used for the magnetization fixed portion 51 by applying the configuration shown in FIG.

10 記録ヘッド
11 主磁極
12 補助磁極
13 ピラー
14 絶縁体
15 ヨーク部
16 ポール部
17 トレーリングシールド
19 コイル
20 再生ヘッド
21 再生素子
22,23 磁気シールド
30 マイクロ波発生器
31 垂直磁気異方性体
32 磁化高速回転体
33 スピン伝導層
34 スピン注入層
35 スピン伝導層
40 磁気記録媒体
41 磁気記録層
42 中間層
43 軟磁性裏打ち層
51 磁化固定部
52 磁化自由部
53 接合部
54 シリコン基板
55 磁性膜
56,57 端子
58 下地膜
DESCRIPTION OF SYMBOLS 10 Recording head 11 Main magnetic pole 12 Auxiliary magnetic pole 13 Pillar 14 Insulator 15 Yoke part 16 Pole part 17 Trailing shield 19 Coil 20 Reproducing head 21 Reproducing element 22, 23 Magnetic shield 30 Microwave generator 31 Perpendicular magnetic anisotropy 32 Magnetization high-speed rotating body 33 Spin conduction layer 34 Spin injection layer 35 Spin conduction layer 40 Magnetic recording medium 41 Magnetic recording layer 42 Intermediate layer 43 Soft magnetic backing layer 51 Magnetization fixed part 52 Magnetization free part 53 Junction part 54 Silicon substrate 55 Magnetic film 56 57 Terminal 58 Underlayer

Claims (10)

一対の磁気シールドと、その間に配置された再生素子とを備える磁気ヘッドにおいて、
前記再生素子は、磁化が固定された磁化固定部と、前記磁化固定部に接合され外部磁界によって磁化が変化する磁化自由部と、前記磁化固定部と前記磁化自由部にそれぞれ接続された一対の出力端子を備え、
前記磁化固定部と前記磁化自由部の接合部は磁壁トラップを構成していることを特徴とする磁気ヘッド。
In a magnetic head comprising a pair of magnetic shields and a reproducing element disposed therebetween,
The reproducing element includes a magnetization fixed portion having fixed magnetization, a magnetization free portion that is joined to the magnetization fixed portion, and whose magnetization is changed by an external magnetic field, and a pair of magnetization connected to the magnetization fixed portion and the magnetization free portion. With output terminal,
The magnetic head according to claim 1, wherein a junction between the magnetization fixed portion and the magnetization free portion constitutes a domain wall trap.
請求項1に記載の磁気ヘッドにおいて、前記磁化自由部内の磁壁移動に伴うスピン起電力を出力することを特徴とする磁気ヘッド。   2. The magnetic head according to claim 1, wherein a spin electromotive force associated with the domain wall movement in the magnetization free portion is output. 請求項1に記載の磁気ヘッドにおいて、前記接合部は幅の狭まった狭窄部であることを特徴とする磁気ヘッド。   2. The magnetic head according to claim 1, wherein the joining portion is a narrowed portion having a narrow width. 請求項1に記載の磁気ヘッドにおいて、前記磁化固定部を構成する磁性膜の膜厚は前記磁化自由部を構成する磁性膜の膜厚より厚く、前記接合部で前記磁化固定部の磁性膜と前記磁化自由部の磁性膜に段差が形成されていることを特徴とする磁気ヘッド。   2. The magnetic head according to claim 1, wherein a film thickness of the magnetic film constituting the magnetization fixed part is larger than a film thickness of the magnetic film constituting the magnetization free part, and the magnetic film of the magnetization fixed part is A magnetic head, wherein a step is formed in the magnetic film of the magnetization free portion. 請求項1に記載の磁気ヘッドにおいて、前記磁化固定部を構成する磁性膜の保磁力は前記磁化自由部を構成する磁性膜の保磁力より大きいことを特徴とする磁気ヘッド。   2. The magnetic head according to claim 1, wherein the coercivity of the magnetic film constituting the magnetization fixed portion is larger than the coercivity of the magnetic film constituting the magnetization free portion. 請求項1に記載の磁気ヘッドにおいて、前記磁化固定部と前記磁化自由部は前記接合部で角度をなして接合されていることを特徴とする磁気ヘッド。   The magnetic head according to claim 1, wherein the magnetization fixed portion and the magnetization free portion are joined at an angle at the joint. 請求項1〜6のいずれか1項に記載の磁気ヘッドにおいて、前記磁化固定部を構成する磁性膜及び前記磁化自由部を構成する磁性膜は、反強磁性膜の上に形成されていることを特徴とする磁気ヘッド。   7. The magnetic head according to claim 1, wherein the magnetic film constituting the magnetization fixed portion and the magnetic film constituting the magnetization free portion are formed on an antiferromagnetic film. Magnetic head characterized by 請求項1〜7のいずれか1項に記載の磁気ヘッドにおいて、前記磁化固定部の体積は前記磁化自由部の体積より大きいことを特徴とする磁気ヘッド。   The magnetic head according to claim 1, wherein a volume of the magnetization fixed portion is larger than a volume of the magnetization free portion. 請求項1〜8のいずれか1項に記載の磁気ヘッドにおいて、記録磁界を発生する磁極とマイクロ波を照射するマイクロ波発生器を有する記録ヘッドを備えることを特徴とする磁気ヘッド。   9. The magnetic head according to claim 1, further comprising: a recording head having a magnetic pole that generates a recording magnetic field and a microwave generator that irradiates microwaves. 垂直磁気記録媒体と、前記垂直磁気記録媒体を駆動する媒体駆動部と、前記垂直磁気記録媒体に対して情報の書き込み及び読み出しを行う磁気ヘッドと、前記磁気ヘッドを前記垂直磁気記録媒体の所望トラックに位置決めするヘッド駆動部とを有する磁気記憶装置において、
前記磁気ヘッドとして請求項9に記載の磁気ヘッドを用いることを特徴とする磁気記憶装置。
A perpendicular magnetic recording medium; a medium driving unit that drives the perpendicular magnetic recording medium; a magnetic head that writes and reads information to and from the perpendicular magnetic recording medium; and a desired track of the perpendicular magnetic recording medium. In a magnetic storage device having a head drive unit for positioning to
A magnetic storage device using the magnetic head according to claim 9 as the magnetic head.
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Publication number Priority date Publication date Assignee Title
JP2005109241A (en) * 2003-09-30 2005-04-21 Tdk Corp Magnetoresistance effect element, manufacturing method thereof, and magnetic head
WO2007015475A1 (en) * 2005-08-02 2007-02-08 Japan Science And Technology Agency Magnetic energy/electric energy conversion element having nano-structure
JP2008016089A (en) * 2006-07-04 2008-01-24 Sharp Corp Magnetic head
WO2008120482A1 (en) * 2007-03-29 2008-10-09 Nec Corporation Magnetic random access memory
JP2009301695A (en) * 2008-06-17 2009-12-24 Tdk Corp Thin-film magnetic head for microwave assist and microwave-assisted magnetic recording method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109241A (en) * 2003-09-30 2005-04-21 Tdk Corp Magnetoresistance effect element, manufacturing method thereof, and magnetic head
WO2007015475A1 (en) * 2005-08-02 2007-02-08 Japan Science And Technology Agency Magnetic energy/electric energy conversion element having nano-structure
JP2008016089A (en) * 2006-07-04 2008-01-24 Sharp Corp Magnetic head
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