JP2012108999A - シリアルインターフェースメモリの同時読み出し及び書き込みメモリ動作 - Google Patents
シリアルインターフェースメモリの同時読み出し及び書き込みメモリ動作 Download PDFInfo
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- G06F13/24—Handling requests for interconnection or transfer for access to input/output bus using interrupt
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- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
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- G06—COMPUTING OR CALCULATING; COUNTING
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- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
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- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
- G06F3/0611—Improving I/O performance in relation to response time
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0683—Plurality of storage devices
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/066—Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/70—Details relating to dynamic memory management
- G06F2212/702—Conservative garbage collection
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2209—Concurrent read and write
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
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Abstract
【解決手段】読み出しコマンドをシリアルに受信する動作において、内部マイクロコントローラはアドレスのMSBから読み出しコメンドのアドレスを含むパーティションに対し、書き込み動作が同じパーティションに生じているかどうかを判断する。書き込み動作が、標的位置のパーティションと同じパーティションに生じている場合、マイクロコントローラは書き込み動作を割り込み、書き込み動作が割り込まれる間に、該当パーティションのコンテンツを読み出す。
【選択図】図6
Description
Claims (20)
- メモリデバイスのメモリアドレスの第1の部分を含む読み出しコマンドを受信することと、
前記メモリアドレスの前記第1の部分に対応するメモリパーティション内で実行されている書き込み動作を割り込むことと、
を含み、前記書き込み動作を前記割り込むことは、前記メモリアドレスの第2の部分を受信する間に実行されることを特徴とする方法。 - 更に、前記書き込み動作が割り込まれる間に、前記メモリアドレスにおいて前記メモリパーティションのコンテンツを読み出すことを含むことを特徴とする請求項1に記載の方法。
- 更に、前記メモリアドレスの最後の部分を受信することに先行して、前記メモリパーティションの前記コンテンツを読み出す内部検知動作を開始することを含むことを特徴とする請求項2に記載の方法。
- 前記書き込み動作を前記割り込むことは、前記メモリデバイスの内部マイクロコントローラによって開始されることを特徴とする請求項1に記載の方法。
- 前記読み出しコマンドを受信することは、シリアルに実行されることを特徴とする請求項1に記載の方法。
- 前記メモリデバイスは、相変化メモリ(PCM)を備えることを特徴とする請求1に記載の方法。
- 前記書き込み動作は、前記メモリデバイスの内部動作によって開始されたことを特徴とする請求項1に記載の方法。
- 更に、前記メモリパーティションの前記コンテンツを前記読み出すことの完了後に前記書き込み動作を再開することを含むことを特徴とする請求項2に記載の方法。
- 前記書き込み動作を前記再開することは、前記メモリデバイスの内部マイクロコントローラによって開始されることを特徴とする請求項8に記載の方法。
- メモリアレイに接続する少なくとも1つのインターフェースと、
メモリデバイスのメモリアドレスの第1の部分を含む読み出しコマンドを受信するとともに、
前記メモリアドレスの前記第1の部分に対応するメモリパーティション内で実行されている書き込み動作を割り込み、前記書き込み動作を前記割り込むことが、前記メモリアドレスの第2の部分を受信する間に実行される電子回路と、
を具備することを特徴とするメモリデバイスのマイクロコントローラ。 - 更に、前記書き込み動作が割り込まれる間に、前記メモリアドレスにおいて前記メモリパーティションのコンテンツを読み出す電子回路を備えることを特徴とする請求項10に記載のメモリデバイスのマイクロコントローラ。
- 更に、前記メモリアドレスの最後の部分を受信することに先行して、前記メモリパーティションの前記コンテンツを読み出す内部検知動作を開始する電子回路を備えることを特徴とする請求項11に記載のメモリデバイスのマイクロコントローラ。
- 前記書き込み動作を前記割り込むことは、前記メモリデバイスの前記マイクロコントローラによって開始されることを特徴とする請求項10に記載のメモリデバイスのマイクロコントローラ。
- 更に、前記メモリパーティションの前記コンテンツを前記読み出すことの完了後に前記書き込み動作を再開する回路を備え、前記書き込み動作を前記再開することは、前記メモリデバイスの前記マイクロコントローラによって開始されることを特徴とする請求項11に記載のメモリデバイスのマイクロコントローラ。
- 前記メモリデバイスは、相変化メモリ(PCM)を備えることを特徴とする請求10に記載のメモリデバイスのマイクロコントローラ。
- メモリアレイを備えるメモリデバイスを備えるシステムであって、前記メモリデバイスは更に、
メモリデバイスのメモリアドレスの第1の部分を含む読み出しコマンドを受信するとともに、
前記メモリアドレスの前記第1の部分に対応するメモリパーティション内で実行されている書き込み動作を割り込み、前記書き込み動作を前記割り込むことが、前記メモリアドレスの第2の部分を受信する間に実行されるマイクロコントローラを備え、前記システムは更に、
1つ又は複数のアプリケーションをホストするとともに、前記メモリアレイに対するアクセスを提供する前記マイクロコントローラに対して前記読み出しコマンドを開始するプロセッサを具備することを特徴とするシステム。 - 前記マイクロコントローラは、前記書き込み動作が割り込まれる間に、前記メモリアドレスにおいて前記メモリパーティションのコンテンツを読み出すように適合されることを特徴とする請求項16に記載のシステム。
- 前記マイクロコントローラは、前記メモリアドレスの最後の部分を受信することに先行して、前記メモリパーティションの前記コンテンツを読み出す内部検知動作を開始するように適合されることを特徴とする請求項17に記載のシステム。
- 前記書き込み動作を前記割り込むことは、前記マイクロコントローラによって開始されることを特徴とする請求項16に記載のシステム。
- 前記マイクロコントローラは、前記メモリパーティションの前記コンテンツを前記読み出すことの完了後に前記書き込み動作を再開するように適合され、前記書き込み動作を前記再開することは、前記マイクロコントローラによって開始されることを特徴とする請求項17に記載のシステム。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/947,781 US8645637B2 (en) | 2010-11-16 | 2010-11-16 | Interruption of write memory operations to provide faster read access in a serial interface memory |
| US12/947,781 | 2010-11-16 |
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| Publication Number | Publication Date |
|---|---|
| JP2012108999A true JP2012108999A (ja) | 2012-06-07 |
| JP5344411B2 JP5344411B2 (ja) | 2013-11-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2011224349A Active JP5344411B2 (ja) | 2010-11-16 | 2011-10-11 | シリアルインターフェースメモリの同時読み出し及び書き込みメモリ動作 |
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| Country | Link |
|---|---|
| US (3) | US8645637B2 (ja) |
| JP (1) | JP5344411B2 (ja) |
| KR (1) | KR20120052893A (ja) |
| CN (2) | CN106294229B (ja) |
| DE (1) | DE102011086098B4 (ja) |
| TW (1) | TWI501235B (ja) |
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| EP3886092A1 (en) | 2020-03-26 | 2021-09-29 | Microsoft Technology Licensing, LLC | Holographic storage |
| EP3886093A1 (en) | 2020-03-26 | 2021-09-29 | Microsoft Technology Licensing, LLC | Optical data transfer |
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| KR100481857B1 (ko) * | 2002-08-14 | 2005-04-11 | 삼성전자주식회사 | 레이아웃 면적을 줄이고 뱅크 마다 독립적인 동작을수행할 수 있는 디코더를 갖는 플레쉬 메모리 장치 |
| FR2874734A1 (fr) * | 2004-08-26 | 2006-03-03 | St Microelectronics Sa | Procede de lecture de cellules memoire programmables et effacables electriquement, a precharge anticipee de lignes de bit |
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| US8645637B2 (en) * | 2010-11-16 | 2014-02-04 | Micron Technology, Inc. | Interruption of write memory operations to provide faster read access in a serial interface memory |
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- 2011-11-15 CN CN201610642839.4A patent/CN106294229B/zh active Active
- 2011-11-15 CN CN201110370055.8A patent/CN102543179B/zh active Active
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| JPH1173773A (ja) * | 1997-07-03 | 1999-03-16 | Samsung Electron Co Ltd | 半導体装置 |
| JP2003114825A (ja) * | 2001-10-04 | 2003-04-18 | Hitachi Ltd | メモリ制御方法、その制御方法を用いたメモリ制御回路、及びそのメモリ制御回路を搭載する集積回路 |
| US20090303807A1 (en) * | 2008-06-05 | 2009-12-10 | Samsung Electronics Co., Ltd. | Semiconductor device and semiconductor system having the same |
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| Publication number | Publication date |
|---|---|
| US9442867B2 (en) | 2016-09-13 |
| US8645637B2 (en) | 2014-02-04 |
| US20140250249A1 (en) | 2014-09-04 |
| US10248592B2 (en) | 2019-04-02 |
| JP5344411B2 (ja) | 2013-11-20 |
| US20170031851A1 (en) | 2017-02-02 |
| DE102011086098A1 (de) | 2012-05-16 |
| TW201222549A (en) | 2012-06-01 |
| CN106294229A (zh) | 2017-01-04 |
| DE102011086098B4 (de) | 2023-05-04 |
| CN102543179A (zh) | 2012-07-04 |
| CN106294229B (zh) | 2019-06-14 |
| TWI501235B (zh) | 2015-09-21 |
| KR20120052893A (ko) | 2012-05-24 |
| US20120124317A1 (en) | 2012-05-17 |
| CN102543179B (zh) | 2016-09-07 |
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