JP2012039511A - Package manufacturing method, package, piezoelectric transducer, oscillator, electronic apparatus and radio clock - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing packages, a package, a piezoelectric transducer, an oscillator, an electronic apparatus and a radio clock that can improve a yield by reducing warpage of a first substrate and can improve mechanical strength of a package.SOLUTION: The package manufacturing method has a reform process for applying heat to a wafer 40 for a base substrate in a state of being pinched from both sides in the thickness direction by reform jigs between a filling process and a second grinding process, and the reform jigs are warped in an opposite direction to the warp direction of the wafer 40 for a base substrate caused by a difference of thermal expansion coefficients between the wafer 40 for a base substrate and a glass frit 38.

Description

  The present invention relates to a package manufacturing method, a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.

  In recent years, a piezoelectric vibrator (package) using a crystal or the like as a time source, a timing source such as a control signal, a reference signal source, or the like is used in a mobile phone or a portable information terminal device (for example, see Patent Document 1). ). Various piezoelectric vibrators of this type are known, and one of them is a surface mount (SMD) type piezoelectric vibrator. This type of piezoelectric vibrator includes, for example, a base substrate and a lid substrate made of glass materials bonded to each other, a cavity formed between both substrates, and a piezoelectric vibration housed in a hermetically sealed state in the cavity. A piece (electronic component).

  In such a piezoelectric vibrator, a through electrode is formed in a through hole formed in the base substrate, and the piezoelectric vibrating piece in the cavity and the external electrode outside the cavity are electrically connected by this through electrode ( For example, see Patent Document 2). Specifically, Patent Document 2 describes a method in which a through hole is first formed in a base substrate, and metal pins are driven into the through hole in a state where the base substrate is thermally softened. However, this method has a problem that it is difficult to completely close the gap between the metal pin and the through hole, and the airtightness in the cavity cannot be secured. In addition, it is complicated to position and insert the metal pins into all the through holes on the base substrate.

  Therefore, recently, a technique has been developed in which a glass frit is filled in a gap between a through hole and a metal pin, and the glass substrate is fired to integrate the base substrate and the metal pin.

FIG. 14 is a process diagram for explaining a method of manufacturing a through electrode. In the following description, a case where a through electrode is formed on a base substrate wafer in which a plurality of base substrates are connected will be described.
As shown in FIG. 14A, first, after forming a tapered concave portion from the first surface 200a of the base substrate wafer 200 (hereinafter referred to as the wafer 200) by press working or the like, the second surface 200b side of the wafer 200 is formed. Is polished up to the broken line portion H, thereby penetrating the concave portion and forming the through hole 201. Next, as shown in FIG. 14B, a box-shaped metal pin 204 having a flat base portion 202 and a core portion 203 erected along the normal direction from the surface of the base portion 202. Is inserted from the small diameter side (the second surface 200b side of the wafer 200) of the through hole 201. Subsequently, as shown in FIG. 14 (c), a pasty glass frit 206 is filled from the large diameter side (first surface 200 a side) of the through hole 201. Thereafter, as shown in FIG. 14D, the wafer 200 is transferred to a firing furnace, and the glass frit 206 is fired. Then, after the fired glass frit 206 is cooled, the through electrode 210 can be formed by polishing at least the second surface 200b of the wafer 200 and removing the base portion 202.

JP 2006-279872 A JP 2002-124845 A

  However, the above-described method has a problem that the wafer 200 is warped when the glass frit 206 is cooled. Specifically, since the through-hole 201 formed in the wafer 200 is formed in a taper shape, the shrinkage of the wafer 200 becomes uneven in the thickness direction when the glass frit 206 is cooled. In this case, since the thermal expansion coefficient of the wafer 200 (glass material) is larger than the thermal expansion coefficient of the glass frit 206, the smaller diameter side (second surface 200b side) of the through hole 201 is on the larger diameter side (first surface). The shrinkage during cooling is larger than that of the surface 200a side). As a result, there is a problem that the wafer 200 is greatly warped with the first surface 200a side convex.

  When the wafer 200 is warped, there is a problem in that the probability that a defective product is generated in a subsequent process increases and the yield decreases. Specifically, in order to manufacture a piezoelectric vibrator, a lid substrate wafer (not shown) in which a plurality of cavity recesses are formed and a base substrate wafer 200 described above are bonded, and then the two wafers are bonded. The body is cut for each formation region (for each cavity) of the piezoelectric vibrator. At this time, after forming a scribe line (groove) by irradiating a laser beam from one side to the cutting line of the joined body, a cutting blade is brought into contact with the other surface of the joined body, The joined body is cut by applying a cleaving stress.

However, by bonding the lid substrate wafer and the base substrate wafer 200 in which warpage has occurred, there is a possibility that the bonded body may also warp following the warpage of the base substrate wafer 200. In this case, at the time of laser irradiation, there is a problem that the planned cutting line of the joined body and the focal position of the laser are shifted, and a scribe line cannot be formed at a desired position. As a result, the joined body may not be cut into a predetermined size.
Further, by bonding the lid substrate wafer and the base substrate wafer 200 in which warpage has occurred, residual stress is generated inside the bonded body, resulting in a decrease in mechanical strength in the cut piezoelectric vibrator. There is a problem of being connected.

  Therefore, the present invention has been made in view of such circumstances, and a package manufacturing method capable of reducing the warpage of the first substrate, improving the yield, and improving the mechanical strength of the package, It is an object to provide a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.

  In order to solve the above-described problems and achieve such an object, the package manufacturing method of the present invention can enclose an electronic component in a cavity formed between a plurality of substrates bonded to each other. A manufacturing method of a package, wherein a through electrode that penetrates a first substrate made of a glass material among the plurality of substrates in a thickness direction and electrically connects the inside of the cavity and the outside of the plurality of substrates is formed. A through-electrode forming step, wherein the through-electrode forming step forms a concave portion on the first surface side of the first substrate, the inner diameter gradually decreasing from the first surface side to the second surface side; A metal pin placement step of inserting a metal pin into the recess, a filling step of filling a glass frit between the recess and the metal pin, and baking the glass frit filled in the recess And a polishing step of polishing at least a second surface of the first substrate to expose the metal pins on the second surface, and the correction treatment is performed between the filling step and the polishing step. And a correction step of heating the first substrate with the tool sandwiched from both sides in the thickness direction, wherein the correction jig is based on a difference in thermal expansion coefficient between the first substrate and the glass frit. It is characterized in that the substrate warps in the opposite direction.

According to this configuration, in the correction process, the first substrate is sandwiched by the correction jig that is warped in the opposite direction and the direction of warping of the first substrate based on the difference in thermal expansion coefficient between the first substrate and the glass frit. By heating, the first substrate is deformed in a direction in which warpage is reduced. As a result, warpage of the first substrate after completion of the polishing process can be reduced, so that the probability that a defective product will occur in the subsequent process can be reduced. For example, it is possible to suppress warpage of the joined body of the plurality of substrates when the plurality of substrates are joined in the subsequent process, so that the joined body can be cut along a desired cutting line (cutting line). Thereby, a yield can be improved and a package of a desired size can be manufactured.
Furthermore, since the warpage of the first substrate can be reduced, the occurrence of residual stress in the package can be suppressed when a plurality of substrates are joined to form a package. Thereby, the mechanical strength of the package can be improved.

In the correction step, the first substrate is heated to a temperature equal to or higher than a strain point.
According to this configuration, since the first substrate is easily deformed by heating the first substrate to a temperature equal to or higher than the strain point, the warpage of the first substrate is reduced while preventing cracking of the first substrate. it can.

Further, the firing process and the correction process are performed simultaneously.
According to this configuration, since the number of times the first substrate is heated (and cooled) can be reduced as compared with the case where the baking step and the correction step are performed separately, the residual stress generated in the first substrate can be reduced. Therefore, the mechanical strength of the first substrate (package) can be further improved.

The package according to the present invention is characterized by being manufactured using the above-described method for manufacturing a package according to the present invention.
According to this configuration, since the package is manufactured using the method for manufacturing a package according to the present invention, the yield can be improved and the generation of residual stress inside the package can be suppressed, and the mechanical strength of the package can be improved. .

The piezoelectric vibrator according to the present invention is characterized in that a piezoelectric vibrating piece is hermetically sealed in the cavity of the package of the present invention.
According to this configuration, it is possible to provide a high-quality and highly reliable piezoelectric vibrator in which mechanical strength is ensured.

  The oscillator of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to an integrated circuit as an oscillator.

  In addition, the electronic device of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a time measuring unit.

The radio timepiece of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a filter portion.
Since the oscillator, the electronic device, and the radio timepiece according to the present invention include the piezoelectric vibrator described above, it is possible to provide a high-quality and highly reliable product in which mechanical strength is ensured.

According to the package manufacturing method and the package of the present invention, the warpage of the first substrate can be reduced, the yield can be improved, and the mechanical strength of the package can be improved.
Further, according to the piezoelectric vibrator according to the present invention, it is possible to provide a high-quality and highly reliable piezoelectric vibrator in which mechanical strength is ensured.
Since the oscillator, the electronic device, and the radio timepiece according to the present invention include the piezoelectric vibrator described above, it is possible to provide a high-quality and highly reliable product in which mechanical strength is ensured.

1 is an external perspective view of a piezoelectric vibrator in an embodiment of the present invention. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a view of a piezoelectric vibrating piece viewed from above with a lid substrate removed. FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. 3 is a flowchart showing a method for manufacturing a piezoelectric vibrator. It is process drawing for demonstrating the manufacturing method of a piezoelectric vibrator, Comprising: It is a disassembled perspective view of a wafer bonded body. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating a penetration electrode formation process. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating a penetration electrode formation process. It is a perspective view of a metal pin. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of an oscillator. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of an electronic device. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of a radio timepiece. It is sectional drawing which shows the other structure of the correction jig. It is sectional drawing of a base substrate, Comprising: It is process drawing for demonstrating the manufacturing method of the conventional penetration electrode.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Piezoelectric vibrator)
FIG. 1 is an external perspective view of the piezoelectric vibrator according to the present embodiment as viewed from the lid substrate side. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2, and FIG. 4 is an exploded perspective view of the piezoelectric vibrator.
As shown in FIGS. 1 to 4, the piezoelectric vibrator 1 of the present embodiment includes a box-shaped package 10 in which a base substrate (first substrate) 2 and a lid substrate 3 are anodically bonded via a bonding material 23, A surface-mounted piezoelectric vibrator 1 including a piezoelectric vibrating piece (electronic component) 5 housed in a cavity C of a package 10. The piezoelectric vibrating reed 5 and the external electrodes 6, 7 installed on the first surface 2 a (the lower surface in FIG. 3) of the base substrate 2 are electrically connected by a pair of through electrodes 8, 9 penetrating the base substrate 2. It is connected.

  The base substrate 2 is formed in a plate shape with a transparent insulating substrate made of a glass material, for example, soda-lime glass. The base substrate 2 is formed with a pair of through holes (recesses) 21 and 22 in which a pair of through electrodes 8 and 9 are formed. The through holes 21 and 22 have a tapered shape in which the diameter gradually decreases from the first surface 2a of the base substrate 2 toward the second surface 2b (upper surface in FIG. 3).

  Similar to the base substrate 2, the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape that can be superimposed on the base substrate 2. A rectangular recess 3 a for accommodating the piezoelectric vibrating reed 5 is formed on the inner surface 3 b (lower surface in FIG. 3) side of the lid substrate 3. The concave portion 3 a forms a cavity C that accommodates the piezoelectric vibrating piece 5 when the base substrate 2 and the lid substrate 3 are overlaid. The lid substrate 3 is anodically bonded to the base substrate 2 via the bonding material 23 with the recess 3a facing the base substrate 2 side. That is, the inner surface 3 b side of the lid substrate 3 constitutes a recess 3 a formed in the center and a frame region 3 c formed around the recess 3 a and serving as a bonding surface with the base substrate 2.

The piezoelectric vibrating piece 5 is a tuning fork type vibrating piece formed from a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied.
This piezoelectric vibrating piece 5 is a tuning fork type comprising a pair of vibrating arm portions 24 and 25 arranged in parallel and a base portion 26 that integrally fixes the base end sides of the pair of vibrating arm portions 24 and 25. On the outer surface of the vibrating arm portions 24, 25, there are formed an excitation electrode comprising a pair of first excitation electrode and second excitation electrode (not shown) for vibrating the vibrating arm portions 24, 25, and a first excitation electrode. And a pair of mount electrodes that electrically connect the second excitation electrode and routing electrodes 27 and 28 described later (both not shown).

  2 and 3, the piezoelectric vibrating reed 5 configured as described above is formed on the lead-out electrodes 27 and 28 formed on the second surface 2b of the base substrate 2 by using bumps B such as gold. It is bump-bonded to. More specifically, the first excitation electrode of the piezoelectric vibrating piece 5 is bump-bonded on one lead-out electrode 27 via one mount electrode and bump B, and the second excitation electrode is connected to the other mount electrode and Bump bonding is performed on the other lead-out electrode 28 via the bump B. As a result, the piezoelectric vibrating reed 5 is supported while being floated from the second surface 2b of the base substrate 2, and the mount electrodes and the routing electrodes 27 and 28 are electrically connected to each other.

  The external electrodes 6 and 7 are installed on both sides of the first surface 2 a of the base substrate 2 in the longitudinal direction, and are electrically connected to the piezoelectric vibrating reed 5 through the through electrodes 8 and 9 and the routing electrodes 27 and 28. It is connected. More specifically, one external electrode 6 is electrically connected to one mount electrode of the piezoelectric vibrating piece 5 through one through electrode 8 and one routing electrode 27. The other external electrode 7 is electrically connected to the other mount electrode of the piezoelectric vibrating piece 5 through the other through electrode 9 and the other lead-out electrode 28.

  The through-electrodes 8 and 9 are formed by the cylindrical body 32 and the core member 31 that are integrally fixed to the through-holes 21 and 22 by firing, and completely close the through-holes 21 and 22 to form a cavity. The airtightness in C is maintained, and the external electrodes 6 and 7 and the routing electrodes 27 and 28 are electrically connected. Specifically, one through electrode 8 is positioned below the lead-out electrode 27 between the external electrode 6 and the base portion 26, and the other through electrode 9 is between the external electrode 7 and the vibrating arm portion 25. Is located below the routing electrode 28.

The cylindrical body 32 is obtained by firing a paste-like glass frit 38 (see FIG. 7). The cylindrical body 32 is formed in a cylindrical shape having flat ends and substantially the same thickness as the base substrate 2. A core member 31 is arranged at the center of the cylinder 32 so as to penetrate the center hole of the cylinder 32. In the present embodiment, the outer shape of the cylindrical body 32 is formed in a truncated cone shape (tapered cross section) according to the shape of the through holes 21 and 22. The cylindrical body 32 is fired in a state of being embedded in the through holes 21 and 22, and is firmly fixed to the through holes 21 and 22.
The core material portion 31 described above is a conductive core material formed in a cylindrical shape from a metal material, and both ends are flat like the cylindrical body 32 and have a thickness substantially the same as the thickness of the base substrate 2. Is formed. When the through electrodes 8 and 9 are formed as finished products, the core portion 31 is formed in a columnar shape and has the same thickness as the base substrate 2 as described above. In the process, as shown in FIG. 9 to be described later, a box-shaped metal pin 37 is formed together with a flat base portion 36 connected to one end portion of the core portion 31.

  A bonding material 23 for anodic bonding is formed on the entire inner surface 3 b of the lid substrate 3. Specifically, the bonding material 23 is formed over the entire inner surface of the frame region 3c and the recess 3a. Although the bonding material 23 of the present embodiment is formed of a Si film, the bonding material 23 can also be formed of Al. Note that the bonding material 23 may be formed of a Si bulk material whose resistance is reduced by doping or the like. As will be described later, the bonding material 23 and the base substrate 2 are anodically bonded, and the cavity C is vacuum-sealed.

  When the piezoelectric vibrator 1 configured as described above is operated, a predetermined drive voltage is applied to the external electrodes 6 and 7 formed on the base substrate 2. As a result, a current can be passed through each excitation electrode of the piezoelectric vibrating piece 5, and the pair of vibrating arm portions 24 and 25 can be vibrated at a predetermined frequency in a direction in which the pair of vibrating arm portions 24 and 25 approaches and separates. The vibration of the pair of vibrating arm portions 24 and 25 can be used as a time source, a control signal timing source, a reference signal source, or the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the above-described piezoelectric vibrator will be described. FIG. 5 is a flowchart of the method for manufacturing the piezoelectric vibrator according to this embodiment. FIG. 6 is an exploded perspective view of the wafer bonded body. Hereinafter, a plurality of piezoelectric vibrating reeds 5 are sealed between a base substrate wafer (first substrate) 40 in which a plurality of base substrates 2 are connected and a lid substrate wafer 50 in which a plurality of lid substrates 3 are connected. A method for simultaneously manufacturing a plurality of piezoelectric vibrators 1 by forming the bonded body 60 and cutting the wafer bonded body 60 will be described. A broken line M shown in FIG. 6 illustrates a cutting line that is cut in the cutting process.
As shown in FIG. 5, the piezoelectric vibrator manufacturing method according to this embodiment mainly includes a piezoelectric vibrating piece manufacturing step (S10), a lid substrate wafer manufacturing step (S20), and a base substrate wafer manufacturing step. (S30) and an assembly process (S42 and subsequent steps). Among them, the piezoelectric vibrating piece producing step (S10), the lid substrate wafer producing step (S20) and the base substrate wafer producing step (S30) can be performed in parallel.

  First, the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 5 shown in FIGS. 1 to 4 (S10). Further, after the piezoelectric vibrating piece 5 is manufactured, the resonance frequency is coarsely adjusted. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting.

(Wad production process for lid substrate)
Next, as shown in FIGS. 5 and 6, a lid substrate wafer manufacturing process is performed in which a lid substrate wafer 50 to be the lid substrate 3 later is manufactured up to the state immediately before anodic bonding (S20). Specifically, after polishing and cleaning soda-lime glass to a predetermined thickness, a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like (S21). Next, a recess forming step is performed for forming a plurality of recesses 3a for the cavity C in the matrix direction by etching or the like on the first surface 50a (the lower surface in FIG. 6) of the lid substrate wafer 50 (S22).
Next, in order to ensure airtightness with the base substrate wafer 40 to be described later, a polishing step of polishing at least the first surface 50a side of the lid substrate wafer 50 that is a bonding surface with the base substrate wafer 40. (S23) is performed, and the first surface 50a is mirror-finished.

Next, a bonding material forming step (S24) for forming the bonding material 23 on the entire first surface 50a of the lid substrate wafer 50 (the bonding surface with the base substrate wafer 40 and the inner surface of the recess 3a) is performed. In this manner, by forming the bonding material 23 on the entire first surface 50a of the lid substrate wafer 50, patterning of the bonding material 23 becomes unnecessary, and the manufacturing cost can be reduced. The bonding material 23 can be formed by a film forming method such as sputtering or CVD. Further, since the bonding surface is polished before the bonding material forming step (S24), the flatness of the surface of the bonding material 23 is ensured, and stable bonding with the base substrate wafer 40 can be realized.
The lid substrate wafer creation step (S20) is thus completed.

(Base substrate wafer creation process)
Next, a base substrate wafer manufacturing step is performed in which the base substrate wafer 40 to be the base substrate 2 later is manufactured up to the state immediately before anodic bonding (S30). First, after polishing and washing soda-lime glass to a predetermined thickness, a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31).

(Penetration electrode formation process)
Next, a through electrode forming step for forming through electrodes 8 and 9 (see FIG. 3) that penetrate the base substrate wafer 40 in the thickness direction and conduct the inside of the cavity C and the outside of the piezoelectric vibrator 1 (S32). I do. Details of the through electrode forming step (S32) will be described below. 7 and 8 are cross-sectional views of the base substrate wafer, and are process diagrams for explaining a through electrode forming process.
In the through electrode forming step (S32), first, a through hole forming step (S33) for forming a plurality of pairs of through holes 21, 22 penetrating the base substrate wafer 40 is performed.

  In the through hole forming step (S33), as shown in FIG. 7A, the inner diameter gradually decreases from the first surface 40a side to the second surface 40b side of the base substrate wafer 40 by pressing or the like. The concave portion 41 is formed (S34: concave portion forming step).

  Next, as shown in FIG. 7B, at least the second surface 40b of the base substrate wafer 40 is polished to penetrate the recess 41 in the thickness direction of the base substrate wafer 40 (S35: first polishing). Process). Accordingly, the through holes 21 and 22 can be formed so that the inner diameter gradually decreases from the first surface 40a side to the second surface 40b side of the base substrate wafer 40 (base substrate 2).

Then, the metal pin arrangement | positioning process which arrange | positions the core part 31 of the metal pin 37 in the several through-holes 21 and 22 formed at the through-hole formation process (S32) is performed (S36). FIG. 9 is a perspective view of a metal pin.
As shown in FIG. 9, the metal pin 37 is slightly shorter than the thickness of the base substrate wafer 40 along a direction substantially perpendicular to the surface of the base portion 36 and the base portion 36 from the flat base portion 36. A core member 31 having a length and a flat tip.

  Then, as shown in FIG. 7C, the core portion 31 of the metal pin 37 is inserted from the small diameter side of the through holes 21 and 22 (the second surface 40b side of the base substrate wafer 40). At this time, the core member 31 is inserted until the surface of the base portion 36 of the metal pin 37 contacts the second surface 40 b of the base substrate wafer 40. Here, it is necessary to arrange the metal pin 37 so that the axial direction of the core part 31 and the axial direction of the through holes 21 and 22 substantially coincide. However, since the metal pin 37 having the core portion 31 formed on the base portion 36 is used, the base portion 36 is attached to the base substrate wafer 40 when the core portion 31 is inserted into the through holes 21 and 22. The axial direction of the core part 31 and the axial direction of the through holes 21 and 22 can be made to substantially coincide with each other by a simple operation of pushing in until they are brought into contact with each other. Therefore, workability at the time of the metal pin arranging step (S36) can be improved.

Next, as shown in FIG. 7D, a paste-like glass frit 38 is filled from the large diameter side of the through holes 21 and 22 (the first surface 40a side of the base substrate wafer 40) (S37). The filling step (S37) uses a vacuum printing method or the like to scan the glass frit 38 into the through holes 21 and 22 by scanning a squeegee (not shown) along the first surface 40a of the base substrate wafer 40. So as to fill.
In the filling step (S37), excess glass frit 38 present on the first surface 40a of the base substrate wafer 40 is removed before firing. Specifically, by using a squeegee (not shown) and scanning along the first surface 40a with the tip of the squeegee in contact with the first surface 40a of the base substrate wafer 40, the through holes 21, The residue of the glass frit 38 protruding from 22 is removed.

In the present embodiment, by using a vacuum printing method in the filling step (S37), the glass frit 38 is degassed, and bubbles (air or the like) contained in the glass frit 38 can be removed. Thereby, the glass frit 38 with few bubbles can be filled in the through holes 21 and 22.
Further, since the glass frit 38 can be filled in a state where the air is extracted from the through holes 21 and 22, the glass frit 38 is placed in the through holes 21 and 22 as compared with the case where the glass frit 38 is filled in an atmospheric pressure atmosphere. Can be filled smoothly. As a result, the glass frit 38 can be filled in the through holes 21 and 22 without any gaps. Furthermore, in this embodiment, the glass frit 38 can be easily filled in the gap between the through holes 21 and 22 and the metal pin 37 by filling the glass frit 38 from the large diameter side of the through holes 21 and 22.

  Next, as shown in FIG. 8A, a firing step (S38) for firing the glass frit 38 filled in the filling step (S37) is performed. Specifically, the base substrate wafer 40 is set on the stage 45 of the baking furnace, and the base substrate wafer 40 is held in a temperature atmosphere of about 610 ° C. for about 30 minutes, for example. Thereby, the through holes 21 and 22, the glass frit 38 embedded in the through holes 21 and 22, and the metal pin 37 (core member 31) disposed in the glass frit 38 are fixed to each other. When firing, the entire base portion 36 is fired, so that the axial direction of the core material portion 31 and the axial directions of the through holes 21 and 22 are substantially matched, and the two are integrally fixed. Can do. The glass frit 38 is solidified as the cylindrical body 32 by being fired. Thereafter, the base substrate wafer 40 is cooled while gradually decreasing the temperature.

  By the way, when the base substrate wafer 40 is cooled after the baking step (S38) as described above, the base substrate wafer 40 is moved to the first surface 40a due to the difference in thermal expansion coefficient between the base substrate wafer 40 and the glass frit 38. It will be greatly warped with the convex side. At this time, the warpage amount D1 of the base substrate wafer 40 (the height between the center and the peripheral edge of the base substrate wafer 40) is, for example, about 500 μm to 1500 μm.

In this case, for example, in the second polishing step (S40), which is a subsequent step, the entire surface direction of the base substrate wafer 40 cannot be adhered to the holding plate of the polishing apparatus, and the polishing surface of the base substrate wafer 40 and the polishing apparatus The contact with the polishing pad becomes uneven in the surface direction of the base substrate wafer 40. As a result, there is a problem that the polishing rate varies in the surface direction of the base substrate wafer 40 and the final thickness of the final base substrate wafer 40 varies. Further, there is a problem in that the final thickness of the final base substrate wafer 40 varies, and the parallelism of the base substrate wafer 40 decreases, so-called decrement.
Further, as described above, by joining the base substrate wafer 40 and the lid substrate wafer that have warped, the wafer bonded body may be warped following the warp of the base substrate wafer 40. There is. In this case, at the time of laser irradiation, there is a problem that the planned cutting line of the wafer bonded body is shifted from the focal position of the laser, and a scribe line cannot be formed at a desired position. As a result, the joined body may not be cut into a predetermined size.

Therefore, in the present embodiment, as shown in FIG. 8B, after the baking step (S38), prior to the second polishing step (S40) to be described later, a correction step for correcting the warp of the base substrate wafer 40 ( S39) is performed. The straightening step (S39) is performed by heating the base substrate wafer 40 sandwiched from both sides in the thickness direction by the straightening jig 62.
Specifically, as shown in FIG. 8C, first, the correction jig 62 is mounted on the base substrate wafer 40. The correction jig 62 includes a receiving mold 63 installed on the second surface 40b side of the base substrate wafer 40 and a pressing mold 64 installed on the first surface 40a side. The receiving mold 63 and the pressing mold 64 are provided. The base substrate wafer 40 is sandwiched from both sides in the thickness direction.

  The receiving die 63 is a plate material formed larger than the planar shape of the base substrate wafer 40, and is recessed in the thickness direction on the surface (a surface facing the second surface 40 b of the base substrate wafer 40). A recess 65 is formed. The concave portion 65 is formed in a concave shape that curves from the outer peripheral portion to the central portion of the receiving die 63.

  The pressing die 64 is a die that presses the base substrate wafer 40 along the thickness direction from the first surface 40 a side, and is a plate material formed larger than the planar shape of the base substrate wafer 40. On the back surface (the surface facing the first surface 40 a of the base substrate wafer 40) of the pressing mold 64, a convex portion 67 that protrudes in the thickness direction is formed. The convex portion 67 is formed in a convex shape that curves from the outer peripheral portion of the pressure die 64 toward the central portion. In this case, the radius of curvature of the concave portion 65 of the receiving die 63 and the convex portion 67 of the pressing die 64 are formed to be equal to each other, and when the receiving die 63 and the pressing die 64 are overlapped, The convex part 67 is accommodated. In this case, the depth D2 of the concave portion 65 and the height D3 of the convex portion 67 are both formed to be about 50 μm to 100 μm, for example.

  The convex portion 67 is formed with a plurality of groove portions 66 that avoid the through holes 21 and 22. The grooves 66 are formed in the matrix direction on the back surface of the pressurizing die 64, and commonly avoid the through holes 21 and 22 arranged on the same straight line in the surface direction of the base substrate wafer 40. ing.

  Here, in the correction step (S39), the concave portion 65 of the receiving die 63 and the second surface 40b of the base substrate wafer 40 face each other, and the convex portion 67 of the pressing die 64 and the first surface of the base substrate wafer 40 are provided. The base substrate wafer 40 is sandwiched from both sides in the thickness direction by the correction jig 62 so as to face the substrate 40a. In this case, by attaching the correction jig 62 so that the direction of the curved surface of the correction jig 62 and the direction of warping of the base substrate wafer 40 are opposite to each other, the base is formed on the outer peripheral portion of the receiving die 63. The outer peripheral portion of the second surface 40 b of the substrate wafer 40 is in contact with the central portion of the pressing die 64, and the central portion of the first surface 40 a of the base substrate wafer 40 is in contact with it.

Then, the base substrate wafer 40 on which the correction jig 62 is mounted is heated in a heating furnace. At this time, the weight 68 is set on the surface side of the pressing die 64, and the base substrate wafer 40 is pressed through the pressing die 64 in the thickness direction (for example, 3 kg / inch), and heated. The weight 68 described above is formed in the same shape as the planar shape of the pressurizing die 64, and thereby, the entire surface direction of the base substrate wafer 40 can be uniformly pressed along the thickness direction.
In the correction step (S39), the base substrate wafer 40 is heated to a temperature equal to or higher than the strain point (eg, about 495 ° C.) of soda lime glass, for example, about 500 ° C. to 550 ° C. and held for about 20 minutes. In this embodiment, the base substrate wafer 40 is heated to about 500 ° C. Here, the glass continuously decreases in viscosity when heated, but there are a strain point, a slow cooling point, and a softening point as temperatures that serve as an index indicating the thermal characteristics of the glass. Among these, the strain point is a temperature at which the viscosity becomes 10 ^14.5 dPas in the viscosity curve of glass.

When the base substrate wafer 40 is heated while being pressed by the pressure die 64 under the above-described conditions, the center portion of the base substrate wafer 40 is pressed by the pressure die 64 along the thickness direction from the first surface 40a side. On the other hand, the pressure acts on the outer peripheral portion in the direction against the pressing force by the pressure die 64 along the thickness direction from the second surface 40b side. Thereby, the base substrate wafer 40 is deformed in a direction in which the warpage amount D1 decreases so as to follow the shape of the concave portion 65 and the convex portion 67 of the correction jig 62. As a result, the warp amount D1 of the base substrate wafer 40 generated based on the difference in thermal expansion coefficient between the base substrate wafer 40 and the glass frit 38 can be reduced. At this time, as described above, by heating the base substrate wafer 40 to a temperature equal to or higher than the strain point, the base substrate wafer 40 is easily deformed. Warpage of the base substrate wafer 40 can be reduced.
Thereafter, the base substrate wafer 40 is cooled while gradually decreasing the temperature, and the correction jig 62 is removed from the base substrate wafer 40 (see FIG. 8D).

  In the correction step (S39), the glass frit 38 (cylinder 32) may be melted again in the through holes 21 and 22 during heating. Since the groove part 66 is formed so as to avoid this, it is possible to prevent the molten glass frit 38 from adhering to the pressure mold 64. Further, if bubbles remain in the glass frit 38, the groove 66 functions as a bubble escape channel even if the bubbles are released from the glass frit 38 as the glass frit 38 is melted. Residual air bubbles can be suppressed.

  After the correction step (S39) is completed, a second polishing step (S40) for polishing both surfaces 40a and 40b of the base substrate wafer 40 is performed. In the second polishing step (S40), as shown in FIG. 8E, the second surface 40b side of the base substrate wafer 40 is polished to the broken line portion K1, and the base portion 36 of the metal pins 37 is removed. Thereby, the base part 36 which played the role which positioned the cylinder 32 and the core part 31 can be removed, and only the core part 31 can be left inside the cylinder 32. FIG. On the other hand, the first surface 40a side of the base substrate wafer 40 is polished to the broken line portion K2, and the tip of the core member 31 is exposed from the first surface 40a. As a result, a plurality of pairs of through electrodes 8 and 9 in which the cylindrical body 32 and the core member 31 are integrally fixed can be obtained. The second polishing step (S39) can be performed simultaneously with a double-side polishing apparatus or the like.

  Next, a conductive material is patterned on the second surface 40b of the base substrate wafer 40, and a lead electrode forming step is performed (S41). In this way, the base substrate wafer manufacturing process (S30) is completed.

(Assembly process)
Next, the piezoelectric vibrating reeds 5 created in the piezoelectric vibrating reed creating step (S10) are respectively formed on the routing electrodes 27 and 28 of the base substrate wafer 40 created in the base substrate wafer creating step (S30). It mounts via bumps B, such as gold (S42). Then, an overlaying step is performed in which the base substrate wafer 40 and the lid substrate wafer 50 created in the above-described production steps of the wafers 40 and 50 are overlaid (S50). Specifically, both wafers 40 and 50 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 5 is housed in a cavity C surrounded by the recess 3 a formed in the lid substrate wafer 50 and the base substrate wafer 40.

  After the superposition step (S50), the two superposed wafers 40 and 50 are put into an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere in a state where the outer peripheral portion of the wafer is clamped by a holding mechanism (not shown). Is applied to perform anodic bonding (S60). Specifically, a predetermined voltage is applied between the bonding material 23 and the lid substrate wafer 50. As a result, an electrochemical reaction occurs at the interface between the bonding material 23 and the lid substrate wafer 50, and the two are firmly bonded and anodically bonded. Thereby, the piezoelectric vibrating reed 5 can be sealed in the cavity C, and the wafer bonded body 60 in which the base substrate wafer 40 and the lid substrate wafer 50 are bonded can be obtained. Then, the two wafers 40 and 50 are anodically bonded as in the present embodiment, so that compared with the case where the two wafers 40 and 50 are bonded with an adhesive or the like, a shift due to deterioration with time, impact, etc. Thus, both wafers 40 and 50 can be bonded more firmly.

Thereafter, a pair of external electrodes 6 and 7 electrically connected to the pair of through electrodes 8 and 9 are formed (S70), and the frequency of the piezoelectric vibrator 1 is finely adjusted (S80).
Then, an individualizing step (S90) is performed for cutting the bonded wafer bonded body 60 along the cutting line M. Specifically, first, a UV tape is affixed to the second surface 40 b side of the base substrate wafer 40 of the wafer bonded body 60. Next, a laser is irradiated along the cutting line M from the lid substrate wafer 50 side to form a scribe line along the cutting line M. Next, the cutting blade is pressed along the cutting line M from the surface of the UV tape to cleave the wafer bonded body 60 (braking). Thereafter, the UV tape is peeled off by UV irradiation. Thereby, the wafer bonded body 60 can be separated into a plurality of piezoelectric vibrators 1. The wafer bonded body 60 may be cut by other methods such as dicing.

In the electrical characteristic inspection step (S100), the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of the resonance frequency and resonance resistance value), etc. of the piezoelectric vibrator 1 are measured and checked. In addition, the insulation resistance characteristics are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like.
Thus, the piezoelectric vibrator 1 is completed.

As described above, in the present embodiment, in the correction step (S39), the direction of the warp of the base substrate wafer 40 based on the difference in thermal expansion coefficient between the base substrate wafer 40 and the glass frit 38 and the correction treatment that curves in the opposite direction. The base substrate wafer 40 is sandwiched between the tools 62 and heated.
According to this configuration, the base substrate wafer 40 has a warping amount D1 so as to follow the concave portion 65 and the convex portion 67 of the correction jig 62 by heating the base substrate wafer 40 while pressing it with the pressing die 64. Deforms in a decreasing direction. As a result, the warp of the base substrate wafer 40 after the second polishing step (S40) is completed can be reduced, so that the probability of a defective product occurring in the subsequent step can be reduced. For example, when polishing the base substrate wafer 40 in a subsequent process, variations in the polishing rate can be suppressed, so that the finished thickness of the base substrate wafer 40 can be made uniform and the occurrence of partial reduction can be suppressed. Further, since it is possible to suppress the warpage of the wafer bonded body 60 when the wafers 40 and 50 are bonded in the subsequent process, the wafer bonded body 60 is cut along a desired cutting line (cutting line M). it can. Thereby, a yield can be improved and the package 10 of a desired size can be manufactured.

  Furthermore, since the warpage of the base substrate wafer 40 can be reduced, it is possible to suppress the occurrence of residual stress in the wafer bonded body 60 when both the wafers 40 are bonded as the wafer bonded body 60. Thereby, the high-quality and highly reliable piezoelectric vibrator 1 in which the mechanical strength is ensured can be provided.

(Oscillator)
Next, an embodiment of an oscillator according to the present invention will be described with reference to FIG.
As shown in FIG. 10, the oscillator 100 according to the present embodiment is configured such that the piezoelectric vibrator 1 is an oscillator electrically connected to the integrated circuit 101. The oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. The above-described integrated circuit 101 for the oscillator is mounted on the substrate 103, and the piezoelectric vibrating piece 5 of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101. The electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).

In the oscillator 100 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece 5 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 5 and input to the integrated circuit 101 as an electric signal. The input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal. Thereby, the piezoelectric vibrator 1 functions as an oscillator.
Further, by selectively setting the configuration of the integrated circuit 101, for example, an RTC (real-time clock) module or the like according to a request, the operation date and time of the device and the external device in addition to a single-function oscillator for a clock, etc. A function for controlling the time, providing a time, a calendar, and the like can be added.

  As described above, according to the oscillator 100 of the present embodiment, since the piezoelectric vibrator 1 having sufficient mechanical strength is provided, the high-quality oscillator 100 having excellent mechanical strength can be provided. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.

(Electronics)
Next, an embodiment of an electronic apparatus according to the present invention will be described with reference to FIG. Note that the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device. First, the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen. Further, when used as a communication device, it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.

(Portable information equipment)
Next, the configuration of the portable information device 110 of this embodiment will be described. As shown in FIG. 8, the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power. The power supply unit 111 is made of, for example, a lithium secondary battery. The power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel. The power unit 111 supplies power to each functional unit.

  The control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of audio data, measurement and display of the current time, and the like. The control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.

  The timer unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1. When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 5 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.

The communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
The wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125. The audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120. The amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level. The voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.

In addition, the ring tone generator 123 generates a ring tone in response to a call from the base station. The switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received. To the audio input / output unit 121.
The call control memory unit 124 stores a program related to incoming / outgoing call control of communication. The telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.

  When the voltage applied to each functional unit such as the control unit 112 by the power supply unit 111 falls below a predetermined value, the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop. . The predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V. Upon receiving the voltage drop notification from the voltage detection unit 116, the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.

That is, the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115. This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
In addition, the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.

  As described above, according to the portable information device 110 of the present embodiment, since the piezoelectric vibrator 1 with ensured mechanical strength is provided, the high-quality portable information device 110 having excellent mechanical strength can be provided. . In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.

(Radio watch)
Next, an embodiment of a radio timepiece according to the present invention will be described with reference to FIG.
As shown in FIG. 12, the radio-controlled timepiece 130 according to the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 131. The radio-controlled timepiece 130 receives a standard radio wave including timepiece information and is accurate. It is a clock with a function of automatically correcting and displaying the correct time.
In Japan, there are transmitting stations (transmitting stations) that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves. Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide and the above two transmitting stations cover all of Japan is doing.

Hereinafter, the functional configuration of the radio timepiece 130 will be described in detail.
The antenna 132 receives a long standard wave of 40 kHz or 60 kHz. The long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave. The received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1. The piezoelectric vibrator 1 in this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency described above.

Further, the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134. Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136. The CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed.
Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.

  In addition, although the above-mentioned description was shown in the example in Japan, the frequency of the long standard wave is different overseas. For example, in Germany, a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.

  As described above, according to the radio timepiece 130 of the present embodiment, since the piezoelectric vibrator 1 having sufficient mechanical strength is provided, the high quality radio timepiece 130 having excellent mechanical strength can be provided. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.

The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, a piezoelectric vibrator is manufactured by enclosing a piezoelectric vibrating piece inside the package while using the package manufacturing method according to the present invention. It is also possible to manufacture devices other than the piezoelectric vibrator by enclosing the parts.
In the above-described embodiment, the package manufacturing method of the present invention has been described by taking a piezoelectric vibrator using a tuning-fork type piezoelectric vibrating piece as an example. However, the present invention is not limited to this, and for example, an AT-cut type piezoelectric vibrating piece. The present invention may be applied to a piezoelectric vibrator or the like using (thickness-shear vibrating piece).

  Further, in the above-described embodiment, the through-electrodes 7 and 8 are formed by arranging the metal pins 37 erected from the base portion 36 in the through holes 21 and 22 and then polishing and removing the base portion 36. However, the present invention is not limited to this. For example, the through-holes 21 and 22 may be formed as bottomed recesses, and cylindrical metal pins may be disposed in the recesses to form the through-electrodes. However, the present embodiment is advantageous in that the metal pin can be disposed in the through hole without being tilted.

The depth D2 of the concave portion 65 and the height D3 of the convex portion 67 of the correction jig 62 can be appropriately changed according to the size of the base substrate wafer 40 and the warpage amount D1.
Furthermore, in the above-described embodiment, the concave portion 65 and the convex portion 67 of the correction jig 62 are formed so as to bend in the direction opposite to the direction of warping of the base substrate wafer 40. Is also possible. Specifically, as shown in FIG. 13, the concave portion 65 of the receiving die 63 is formed so as to be gradually depressed along the thickness direction from the outer peripheral side to the central portion, while the convex portion 67 of the pressing die 64 is formed from the outer peripheral side. You may form so that it may protrude gradually toward a center part. Thereby, compared with the case where the recessed part 65 and the convex part 67 are curved, the process of the correction jig 62 becomes easy. In addition, since each level | step difference of the recessed part 65 and the convex part 67 is about 10 micrometers, it does not affect the surface shape of the wafer 40 for base substrates in a correction process (S39).

Further, in the above-described embodiment, the case where the correction process (S39) is performed after the baking process (S38) is finished and the base substrate wafer 40 is once cooled is described. ) And the correction step (S39) may be performed simultaneously. That is, after completion of the filling step (S37), the base substrate wafer 40 in a straight state before the glass frit 38 is solidified is sandwiched by the correction jig 62, and the base substrate wafer 40 is pressed in the above-described firing step (S38). However, the glass frit 38 may be fired by heating.
According to this configuration, since the number of times of heating (and cooling) the base substrate wafer 40 can be reduced, the residual stress generated in the base substrate wafer 40 can be reduced. Therefore, the mechanical strength of the base substrate wafer 40 (piezoelectric vibrator 1) can be further improved.

DESCRIPTION OF SYMBOLS 1 ... Piezoelectric vibrator 5 ... Piezoelectric vibration piece (electronic component) 8, 9 ... Through-electrode 10 ... Package 21, 22 ... Through-hole (recessed part) 31 ... Core material part (metal pin) 36 ... Base part 37 ... Metal pin 38 Glass frit 40 Base wafer (first substrate) 40a First surface 40b Second surface 62 Correction jig 100 Oscillator 101 Integrated circuit 110 Oscillator 110 Portable information device (electronic device) 113 Electronic Timekeeping unit of equipment 130 ... Radio clock 131 ... Filter unit of radio clock C ... Cavity

Claims (8)

A method of manufacturing a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded together,
A through electrode forming step of forming a through electrode that penetrates a first substrate made of a glass material among the plurality of substrates in a thickness direction and electrically connects the inside of the cavity and the outside of the plurality of substrates;
The through electrode forming step includes:
A recess forming step for forming a recess on the first surface side of the first substrate, the inner diameter of which gradually decreases from the first surface side to the second surface side;
A metal pin placement step of inserting a metal pin into the recess,
A filling step of filling a glass frit between the recess and the metal pin;
A firing step of firing and curing the glass frit filled in the recess;
A polishing step of polishing at least a second surface of the first substrate to expose the metal pins on the second surface;
Between the filling step and the polishing step, it has a correction step of heating in a state where the first substrate is sandwiched from both sides in the thickness direction by a correction jig,
The method of manufacturing a package, wherein the correction jig is warped in a direction opposite to a warp direction of the first substrate based on a difference in thermal expansion coefficient between the first substrate and the glass frit.   The package manufacturing method according to claim 1, wherein, in the correction step, the first substrate is heated to a temperature equal to or higher than a strain point.   3. The package manufacturing method according to claim 1, wherein the baking step and the correction step are performed simultaneously.   The package manufactured using the manufacturing method of the package of any one of Claim 1 thru | or 3.   A piezoelectric vibrator comprising a piezoelectric vibrating piece hermetically sealed in the cavity of the package according to claim 4.   The oscillator according to claim 5, wherein the piezoelectric vibrator is electrically connected to an integrated circuit as an oscillator.   6. An electronic apparatus, wherein the piezoelectric vibrator according to claim 5 is electrically connected to a timing unit.   6. A radio timepiece, wherein the piezoelectric vibrator according to claim 5 is electrically connected to a filter portion.

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