JP2012039510A - Package manufacturing method, package, piezoelectric transducer, oscillator, electronic apparatus and radio clock - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing packages, a package, a piezoelectric transducer, an oscillator, an electronic apparatus and a radio clock that can improve production efficiency and reduce a material loss.SOLUTION: In a concavity forming process, penetration holes 21, 22 in which metal pins 37 are disposed and an enlarged diameter part 41 that gradually enlarges the diameter in relation to the penetration holes 21, 22 from the penetration holes 21, 22 toward a first surface 40a are formed along the thickness direction of a wafer 40 for a base substrate, and in a filling process, the enlarged diameter part 41 is filled with glass frits, too.

Description

  The present invention relates to a package manufacturing method, a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.

  In recent years, a piezoelectric vibrator (package) using a crystal or the like as a time source, a timing source such as a control signal, a reference signal source, or the like is used in a mobile phone or a portable information terminal device (for example, see Patent Document 1). ). Various piezoelectric vibrators of this type are known, and one of them is a surface mount (SMD) type piezoelectric vibrator. This type of piezoelectric vibrator includes, for example, a base substrate and a lid substrate made of glass materials bonded to each other, a cavity formed between both substrates, and a piezoelectric vibration housed in a hermetically sealed state in the cavity. A piece (electronic component).

  In such a piezoelectric vibrator, a through electrode is formed in a through hole formed in the base substrate, and the piezoelectric vibrating piece in the cavity and the external electrode outside the cavity are electrically connected by this through electrode ( For example, see Patent Document 2). Specifically, Patent Document 2 describes a method in which a through hole is first formed in a base substrate, and metal pins are driven into the through hole in a state where the base substrate is thermally softened. However, this method has a problem that it is difficult to completely close the gap between the metal pin and the through hole, and the airtightness in the cavity cannot be secured. In addition, it is complicated to position and insert the metal pins into all the through holes on the base substrate.

Therefore, recently, a technique has been developed in which a glass frit is filled in a gap between a through hole and a metal pin, and the glass substrate is fired to integrate the base substrate and the metal pin.
In this case, as shown in FIG. 15A, first, a box-shaped metal having a flat base portion 201 and a core portion 202 erected along the normal direction from the surface of the base portion 201. The core part 202 of the pin 203 is inserted into the through hole 205 of the base substrate 204. Subsequently, as shown in FIG. 15 (b), a paste-like glass frit 206 is filled in the gap between the through hole 205 and the core member 202. Then, by drying and firing the filled glass frit 206, the organic components contained in the glass frit are evaporated and the glass particles contained in the glass frit are melted. As a result, as shown in FIG. 15C, the glass body 207 obtained by baking the glass frit 206, the base substrate 204 (through hole 205), and the metal pin 203 are integrated. Thereafter, the base substrate 204 is polished to the broken line portion H and the base portion 201 is removed, whereby the through electrode 210 can be formed. Thereby, it is considered that the gap between the through hole 205 and the metal pin 203 is closed, and the airtightness in the cavity can be secured.

JP 2006-279872 A JP 2002-124845 A

  By the way, when the penetration electrode 210 is formed using the metal pin 203 and the glass frit 206, the volume of the glass frit 206 is reduced through a drying process and a baking process. Therefore, in order to form a desired amount of the glass body 207 in the through-hole 205, it is necessary to repeat the filling / drying / firing process of the glass frit 206 several times. Therefore, there is a problem that the manufacturing process takes time and effort, and the production efficiency is lowered.

  On the other hand, as shown in FIG. 16A, it is conceivable to form a glass frit filling portion 212 whose diameter is enlarged from the opening edge of the through hole 205 via the stepped portion 211 on the base substrate 204. In this case, since the glass frit 206 can be filled by filling the glass frit 206 in the glass frit filling part 212 in addition to the through-hole 205 in the filling step, the number of times the glass frit 206 is filled to fired can be increased. It can be reduced.

  However, in this configuration, as shown in FIG. 16B, when the volume of the glass frit 206 decreases, the glass frit 206 does not smoothly enter the through hole 205 from the glass frit filling portion 212, and the stepped portion 211. There is a problem that the residue Z accumulates above. Therefore, there is a problem that a sufficient effect cannot be obtained with respect to the increased amount of the glass frit 206 due to the addition of the glass frit filling portion 212, and the loss of the material (glass frit 206) is caused.

  Therefore, the present invention has been made in view of such circumstances, and a manufacturing method of a package, a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio wave capable of improving production efficiency and reducing material loss. The purpose is to provide a watch.

  In order to solve the above-described problems and achieve such an object, the package manufacturing method of the present invention can enclose an electronic component in a cavity formed between a plurality of substrates bonded to each other. A manufacturing method of a package, wherein a through electrode that penetrates a first substrate made of a glass material among the plurality of substrates in a thickness direction and electrically connects the inside of the cavity and the outside of the plurality of substrates is formed. A through electrode forming step, wherein the through electrode forming step includes a concave portion forming step of forming a concave portion from the first surface side of the first substrate, a metal pin arranging step of inserting a metal pin into the concave portion, and A filling step of filling a glass frit between the concave portion and the metal pin, a baking step of baking and hardening the glass frit filled in the concave portion, and polishing the first substrate to form the metal A polishing step for exposing the first pin and the second surface of the first substrate, and in the recess forming step, the metal pin placement portion on which the metal pin is placed, and the metal pin placement portion. A diameter-enlarged portion that gradually expands toward the first surface along the thickness direction of the first substrate, and in the filling step, the diameter-fitted portion is also filled with the glass frit. It is a feature.

According to this configuration, in the filling process, the glass frit can be filled in a single filling process by filling the glass frit in the enlarged diameter portion of the recess. In this case, even if the volume of the glass frit is reduced in the subsequent firing step, the volume of the glass frit existing in the metal pin placement portion after firing is compared with the case where the glass frit is filled only in the through holes as in the conventional case. Can be increased. Thus, the number of times of filling and firing the glass frit can be reduced, and a desired amount of glass frit without a dent or the like can be filled in the metal pin arrangement portion, so that the production efficiency of the package can be improved.
In particular, in the present embodiment, the through-hole and the glass frit filling portion are stepped as in the prior art (see FIG. 16) by forming the enlarged diameter portion so that the diameter gradually increases from the opening edge of the metal pin arrangement portion. Unlike the case of forming via the part, there is no place where the glass frit accumulates in the glass frit filled part. That is, when the volume of the glass frit is reduced by firing, the glass frit in the enlarged diameter portion smoothly enters the metal pin arrangement portion. Therefore, a sufficient effect can be obtained with respect to the increased amount of the glass frit accompanying the addition of the enlarged diameter portion, so that a desired amount of the glass frit can be reliably formed in the metal pin arrangement portion. Furthermore, material loss of the glass frit can be reduced.
And since it can suppress that the dent etc. by the volume reduction | decrease of a glass frit are formed after a baking process, step breakage will generate | occur | produce in the electrode film (for example, an external electrode and a drawing electrode) formed so that a penetration electrode may be covered. Can be suppressed, and electrical continuity between the inside and outside of the cavity can be secured.

Moreover, the inner surface of the said enlarged diameter part is formed in the taper shape, It is characterized by the above-mentioned.
According to this configuration, when the volume of the glass frit is reduced by firing, the glass frit in the enlarged diameter portion enters more smoothly into the metal pin arrangement portion.
Moreover, when shape | molding an enlarged diameter part by the press work etc. by a mold member, the mold release property of a mold member and a 1st board | substrate can be improved, and production efficiency can be improved.

In the recess forming step, the inner diameter on the first surface side in the enlarged diameter portion is formed to be twice or more than the inner diameter on the first surface side in the metal pin arrangement portion.
According to this configuration, the amount of glass frit that can be filled in a single filling step can be reliably increased, so that the number of times the lath frit is filled to fired can be reduced, and the production efficiency of the package can be improved.

In addition, the package of the present invention is characterized by being manufactured using a package manufacturing method.
According to this configuration, since the package is manufactured using the package manufacturing method of the present invention, it is possible to provide a package having excellent conductivity between the inside and the outside of the cavity, improving the reliability of the operation performance and increasing the reliability. Performance can be improved.

The piezoelectric vibrator according to the present invention is characterized in that a piezoelectric vibrating piece is hermetically sealed in the cavity of the package of the present invention.
According to this configuration, since the package of the present invention is provided, it is possible to provide a piezoelectric vibrator having excellent continuity between the inside and the outside of the cavity, and improve the reliability of the operation performance to improve the performance. be able to.

  The oscillator of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to an integrated circuit as an oscillator.

  In addition, the electronic device of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a time measuring unit.

  The radio timepiece of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a filter portion.

  Since the oscillator, electronic device, and radio timepiece according to the present invention include the piezoelectric vibrator of the present invention, a product with excellent reliability can be provided.

According to the package manufacturing method and package of the present invention, it is possible to improve production efficiency and reduce material loss.
Further, according to the piezoelectric vibrator according to the present invention, since the package according to the present invention is provided, it is possible to provide a piezoelectric vibrator having excellent electrical continuity between the inside and the outside of the cavity and improve the reliability of the operation performance. As a result, high performance can be achieved.
Since the oscillator, electronic device, and radio timepiece according to the present invention include the piezoelectric vibrator of the present invention, a product with excellent reliability can be provided.

1 is an external perspective view of a piezoelectric vibrator in an embodiment of the present invention. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a view of a piezoelectric vibrating piece viewed from above with a lid substrate removed. FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. 3 is a flowchart showing a method for manufacturing a piezoelectric vibrator. It is process drawing for demonstrating the manufacturing method of a piezoelectric vibrator, Comprising: It is a disassembled perspective view of a wafer bonded body. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating a through-hole formation process and a metal pin arrangement | positioning process. It is a perspective view of a metal pin. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating a filling process. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating the process after a temporary drying process. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating a grinding | polishing process. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of an oscillator. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of an electronic device. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of a radio timepiece. It is sectional drawing of a base substrate, Comprising: It is process drawing for demonstrating the formation method of the conventional penetration electrode. It is sectional drawing of a base substrate, Comprising: It is process drawing for demonstrating the formation method of the conventional penetration electrode.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Piezoelectric vibrator)
FIG. 1 is an external perspective view of the piezoelectric vibrator according to the present embodiment as viewed from the lid substrate side. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2, and FIG. 4 is an exploded perspective view of the piezoelectric vibrator.
As shown in FIGS. 1 to 4, the piezoelectric vibrator 1 of this embodiment includes a box-shaped package 10 in which a base substrate 2 and a lid substrate 3 are anodically bonded via a bonding material 23, and a cavity C of the package 10. A surface-mounted piezoelectric vibrator 1 including a piezoelectric vibrating piece (electronic component) 5 housed therein. The piezoelectric vibrating reed 5 and the external electrodes 6, 7 installed on the first surface 2 a (the lower surface in FIG. 3) of the base substrate 2 are electrically connected by a pair of through electrodes 8, 9 penetrating the base substrate 2. It is connected.

  The base substrate 2 is formed in a plate shape with a transparent insulating substrate made of a glass material, for example, soda-lime glass. The base substrate 2 is formed with a pair of through holes (metal pin arrangement portions) 21 and 22 in which a pair of through electrodes 8 and 9 are formed. The through-holes 21 and 22 have a tapered cross section in which the diameter gradually decreases from the first surface 2a of the base substrate 2 toward the second surface 2b (upper surface in FIG. 3).

  Similar to the base substrate 2, the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape that can be superimposed on the base substrate 2. A rectangular recess 3 a for accommodating the piezoelectric vibrating reed 5 is formed on the inner surface 3 b (lower surface in FIG. 3) side of the lid substrate 3. The concave portion 3 a forms a cavity C that accommodates the piezoelectric vibrating piece 5 when the base substrate 2 and the lid substrate 3 are overlaid. The lid substrate 3 is anodically bonded to the base substrate 2 via the bonding material 23 with the recess 3a facing the base substrate 2 side. That is, the inner surface 3 b side of the lid substrate 3 constitutes a recess 3 a formed in the center and a frame region 3 c formed around the recess 3 a and serving as a bonding surface with the base substrate 2.

The piezoelectric vibrating piece 5 is a tuning fork type vibrating piece formed from a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied.
This piezoelectric vibrating piece 5 is a tuning fork type comprising a pair of vibrating arm portions 24 and 25 arranged in parallel and a base portion 26 that integrally fixes the base end sides of the pair of vibrating arm portions 24 and 25. On the outer surface of the vibrating arm portions 24, 25, there are formed an excitation electrode comprising a pair of first excitation electrode and second excitation electrode (not shown) for vibrating the vibrating arm portions 24, 25, and a first excitation electrode. And a pair of mount electrodes that electrically connect the second excitation electrode and routing electrodes 27 and 28 described later (both not shown).

  2 and 3, the piezoelectric vibrating reed 5 configured as described above is formed on the lead-out electrodes 27 and 28 formed on the second surface 2b of the base substrate 2 by using bumps B such as gold. It is bump-bonded to. More specifically, the first excitation electrode of the piezoelectric vibrating piece 5 is bump-bonded on one lead-out electrode 27 via one mount electrode and bump B, and the second excitation electrode is connected to the other mount electrode and Bump bonding is performed on the other lead-out electrode 28 via the bump B. As a result, the piezoelectric vibrating reed 5 is supported while being floated from the second surface 2b of the base substrate 2, and the mount electrodes and the routing electrodes 27 and 28 are electrically connected to each other.

  The external electrodes 6 and 7 are installed on both sides of the first surface 2 a of the base substrate 2 in the longitudinal direction, and are electrically connected to the piezoelectric vibrating reed 5 through the through electrodes 8 and 9 and the routing electrodes 27 and 28. It is connected. More specifically, one external electrode 6 is electrically connected to one mount electrode of the piezoelectric vibrating piece 5 through one through electrode 8 and one routing electrode 27. The other external electrode 7 is electrically connected to the other mount electrode of the piezoelectric vibrating piece 5 through the other through electrode 9 and the other lead-out electrode 28.

  The through-electrodes 8 and 9 are formed by the cylindrical body 32 and the core member 31 that are integrally fixed to the through-holes 21 and 22 by firing, and completely close the through-holes 21 and 22 to form a cavity. The airtightness in C is maintained, and the external electrodes 6 and 7 and the routing electrodes 27 and 28 are electrically connected. Specifically, one through electrode 8 is positioned below the lead-out electrode 27 between the external electrode 6 and the base portion 26, and the other through electrode 9 is between the external electrode 7 and the vibrating arm portion 25. Is located below the routing electrode 28.

The cylindrical body 32 is obtained by firing a paste-like glass frit 38 (see FIG. 7). The cylindrical body 32 is formed in a cylindrical shape having flat ends and substantially the same thickness as the base substrate 2. A core member 31 is arranged at the center of the cylinder 32 so as to penetrate the center hole of the cylinder 32. In the present embodiment, the outer shape of the cylindrical body 32 is formed in a truncated cone shape (tapered cross section) according to the shape of the through holes 21 and 22. The cylindrical body 32 is fired in a state of being embedded in the through holes 21 and 22, and is firmly fixed to the through holes 21 and 22.
The core material portion 31 described above is a conductive core material formed in a cylindrical shape from a metal material, and both ends are flat like the cylindrical body 32 and have a thickness substantially the same as the thickness of the base substrate 2. Is formed. When the through electrodes 8 and 9 are formed as finished products, the core portion 31 is formed in a columnar shape and has the same thickness as the base substrate 2 as described above. In the process, as shown in FIG. 8 to be described later, a box-shaped metal pin 37 is formed together with a flat base portion 36 connected to one end portion of the core portion 31.

  A bonding material 23 for anodic bonding is formed on the entire inner surface 3 b of the lid substrate 3. Specifically, the bonding material 23 is formed over the entire inner surface of the frame region 3c and the recess 3a. Although the bonding material 23 of the present embodiment is formed of a Si film, the bonding material 23 can also be formed of Al. Note that the bonding material may be formed of a Si bulk material whose resistance is reduced by doping or the like. As will be described later, the bonding material 23 and the base substrate 2 are anodically bonded, and the cavity C is vacuum-sealed.

  When the piezoelectric vibrator 1 configured as described above is operated, a predetermined drive voltage is applied to the external electrodes 6 and 7 formed on the base substrate 2. As a result, a current can be passed through each excitation electrode of the piezoelectric vibrating piece 5, and the pair of vibrating arm portions 24 and 25 can be vibrated at a predetermined frequency in a direction in which the pair of vibrating arm portions 24 and 25 approaches and separates. The vibration of the pair of vibrating arm portions 24 and 25 can be used as a time source, a control signal timing source, a reference signal source, or the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the above-described piezoelectric vibrator will be described. FIG. 5 is a flowchart of the method for manufacturing the piezoelectric vibrator according to this embodiment. FIG. 6 is an exploded perspective view of the wafer bonded body. Hereinafter, a plurality of piezoelectric vibrating reeds 5 are sealed between a base substrate wafer (first substrate) 40 in which a plurality of base substrates 2 are connected and a lid substrate wafer 50 in which a plurality of lid substrates 3 are connected. A method for simultaneously manufacturing a plurality of piezoelectric vibrators 1 by forming the bonded body 60 and cutting the wafer bonded body 60 will be described. A broken line M shown in FIG. 6 illustrates a cutting line that is cut in the cutting process.
As shown in FIG. 5, the piezoelectric vibrator manufacturing method according to this embodiment mainly includes a piezoelectric vibrating piece manufacturing step (S10), a lid substrate wafer manufacturing step (S20), and a base substrate wafer manufacturing step. (S30) and an assembly process (S40 and below). Among them, the piezoelectric vibrating piece producing step (S10), the lid substrate wafer producing step (S20) and the base substrate wafer producing step (S30) can be performed in parallel.

  First, the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 5 shown in FIGS. 1 to 4 (S10). Further, after the piezoelectric vibrating piece 5 is manufactured, the resonance frequency is coarsely adjusted. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting.

(Wad production process for lid substrate)
Next, as shown in FIGS. 5 and 6, a lid substrate wafer manufacturing process is performed in which a lid substrate wafer 50 to be the lid substrate 3 later is manufactured up to the state immediately before anodic bonding (S20). Specifically, after polishing and cleaning soda-lime glass to a predetermined thickness, a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like (S21). Next, a recess forming step is performed for forming a plurality of recesses 3a for the cavity C in the matrix direction by etching or the like on the first surface 50a (the lower surface in FIG. 6) of the lid substrate wafer 50 (S22).
Next, in order to ensure airtightness with the base substrate wafer 40 to be described later, a polishing step of polishing at least the first surface 50a side of the lid substrate wafer 50 that is a bonding surface with the base substrate wafer 40. (S23) is performed, and the first surface 50a is mirror-finished.

Next, a bonding material forming step (S24) for forming the bonding material 23 on the entire first surface 50a of the lid substrate wafer 50 (the bonding surface with the base substrate wafer 40 and the inner surface of the recess 3a) is performed. In this manner, by forming the bonding material 23 on the entire first surface 50a of the lid substrate wafer 50, patterning of the bonding material 23 becomes unnecessary, and the manufacturing cost can be reduced. The bonding material 23 can be formed by a film forming method such as sputtering or CVD. Further, since the bonding surface is polished before the bonding material forming step (S24), the flatness of the surface of the bonding material 23 is ensured, and stable bonding with the base substrate wafer 40 can be realized.
The lid substrate wafer creation step (S20) is thus completed.

(Base substrate wafer creation process)
Next, a base substrate wafer manufacturing step is performed in which the base substrate wafer 40 to be the base substrate 2 later is manufactured up to the state immediately before anodic bonding (S30). First, after polishing and washing soda-lime glass to a predetermined thickness, a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31).

(Penetration electrode formation process)
Next, a through electrode forming step for forming through electrodes 8 and 9 (see FIG. 3) that penetrate the base substrate wafer 40 in the thickness direction and conduct the inside of the cavity C and the outside of the piezoelectric vibrator 1 (S32). I do. Details of the through electrode forming step (S32) will be described below. FIG. 7 is a cross-sectional view of the base substrate wafer, and is a process diagram for explaining a through hole forming process and a metal pin arranging process.
In the through electrode forming step (S32), first, as shown in FIG. 7, a through hole forming step (S33) for forming a plurality of pairs of through holes 21, 22 penetrating the base substrate wafer 40 is performed.

  In the through hole forming step (S33), first, pressing is performed using the mold member 70, thereby forming the recesses 21a and 22a at positions corresponding to the through holes 21 and 22 on the first surface 40a of the base substrate wafer 40. (S33A: recessed portion forming step). The mold member 70 includes a plate portion 74 having an outer shape substantially the same as that of the base substrate wafer 40, and a protrusion 73 that protrudes from the plate portion 74 in the thickness direction. The protruding portion 73 is formed on the distal end side and has a first protruding portion 71 having substantially the same shape (tapered cross section) as the through holes 21 and 22, and gradually from the proximal end side of the first protruding portion 71 toward the plate portion 74. And a second protruding portion 72 formed so as to expand in diameter.

Then, the tip surface of the first protrusion 71 of the mold member 70 is brought into contact with the first surface 40 a of the base substrate wafer 40 to heat the base substrate wafer 40, and for the base substrate via the mold member 70. The wafer 40 is pressed along the thickness direction. As a result, as shown in FIG. 7B, the protrusion 73 of the mold member 70 is fitted into the base substrate wafer 40, so that the shape of the protrusion 73 is the first surface 40 a side of the base substrate wafer 40. Is transcribed.
Thereafter, after cooling the base substrate wafer 40, the mold member 70 is separated from the base substrate wafer 40, so that the concave portions 21 a having substantially the same shape as the protrusions 73 are formed on the first surface 40 a side of the base substrate wafer 40. 22a is formed. At this time, by forming the protrusion 73 in a tapered shape, the mold release property between the mold member 70 and the base substrate wafer 40 can be improved, and the production efficiency can be improved.

  Subsequently, as shown in FIG. 7C, at least the second surface 40b side of the base substrate wafer 40 is polished from the second surface 40b side to the broken line portion T1, thereby penetrating the recesses 21a and 22a, and passing through the through holes (recesses) 21b, 22b is formed (S33B: polishing step). As a result, the base substrate wafer 40 includes the through holes (metal pin arrangement portions) 21 and 22 corresponding to the first protrusions 71 of the mold member 70 and the enlarged diameter portion 41 corresponding to the second protrusions 72. The two-step taper-shaped through holes 21b and 22b are formed. In other words, the through holes 21 and 22 are formed in a tapered shape that opens to the second surface 40b of the base substrate wafer 40 and gradually increases in inner diameter toward the first surface 40a. Further, the enlarged diameter portion 41 is formed in a tapered shape in which the inner diameter gradually increases from the opening edge on the large diameter side (opening edge on the first surface 40a side) in the through holes 21 and 22 toward the first surface 40a. The first surface 40a is open.

Then, the metal pin arrangement | positioning process which arrange | positions the core material part 31 of a metal pin in the some through-holes 21b and 22b formed by the through-hole formation process (S33) is performed (S34). FIG. 8 is a perspective view of the metal pin.
As shown in FIG. 8, the metal pin 37 includes a flat base portion 36 and a core portion 31 that extends from above the base portion 36 along a direction substantially orthogonal to the surface of the base portion 36. Yes. The core portion 31 is formed with a length shorter than the thickness of the base substrate wafer 40, specifically, slightly shorter than the depth of the through holes 21 and 22, and the tip end surface is formed flat. .

  Then, as shown in FIG. 7 (d), the core portion 31 of the metal pin 37 is inserted from the small diameter side (the second surface 40b side of the base substrate wafer 40) of the through holes 21b and 22b. At this time, the core member 31 is inserted until the surface of the base portion 36 of the metal pin 37 contacts the second surface 40 b of the base substrate wafer 40. Here, it is necessary to arrange the metal pin 37 so that the axial direction of the core part 31 and the axial direction of the through holes 21b and 22b substantially coincide. However, since the metal pin 37 in which the core part 31 is formed on the base part 36 is used, the shaft of the core part 31 can be easily operated by simply pushing the base part 36 until it contacts the base substrate wafer 40. The direction and the axial direction of the through holes 21b and 22b can be made substantially coincident. Therefore, workability at the time of the metal pin arranging step (S34) can be improved.

(Filling process)
FIG. 9 is a sectional view of the base substrate wafer and is a process diagram for explaining a filling process.
As shown in FIG. 9A, the base substrate wafer 40 on which the metal pins 37 are set is transported into the vacuum printing apparatus, and the paste-like glass frit 38 is filled in the through holes 21b and 22b ( S35) is performed. In the filling step (S35) of the present embodiment, the through hole is obtained by scanning the squeegee (the first squeegee 45 and the second squeegee 46) along the first surface 40a of the base substrate wafer 40 in the vacuum printing apparatus. The glass frit 38 is filled from the large diameter side (the first surface 40a side of the base substrate wafer 40) of 21b and 22b. The vacuum printing apparatus of this embodiment is held by a jig (not shown) that holds the base substrate wafer 40 and a moving mechanism (not shown) so as to be able to scan in the reverse direction along the first surface 40a of the base substrate wafer 40. The first squeegee 45 (see FIG. 9A) and the second squeegee 46 (see FIG. 9C) are provided. The glass frit 38 used in the present embodiment is a paste material mainly composed of powdery glass particles and a binder made of an organic solvent and ethyl cellulose.

In starting the filling step (S35), first, the base substrate wafer 40 is set on a jig (not shown) of the vacuum printing apparatus with the first surface 40a (the large diameter side of the through holes 21b and 22b) facing upward. Then, vacuuming is performed in the vacuum printing apparatus.
Then, the glass frit 38 is supplied to the front side of the first squeegee 45 in the scanning direction, and the first squeegee 45 is scanned along the first surface 40a of the base substrate wafer 40 (first scanning step (S35A)). At this time, for example, the first squeegee is directed from one radial side to the other side of the base substrate wafer 40 so that the first surface 40a of the base substrate wafer 40 and the scanning surface of the first squeegee 45 are parallel to each other. 45 is scanned (see arrow in FIG. 9A).

  As a result, the glass frit 38 flows so as to be pushed along the scanning direction of the first squeegee 45 by the tip of the first squeegee 45, whereby the glass frit 38 is filled in the through holes 21b and 22b (FIG. 9). (See (b)). At this time, in the present embodiment, the glass frit 38 is filled not only in the through holes 21 and 22 but also in the enlarged diameter portion 41, so that compared with the case where the glass frit 38 is filled only in the through holes 21 and 22, The filling amount of the glass frit 38 per one place of the through holes 21b and 22b can be increased. Further, in this embodiment, the glass frit 38 is filled from the large diameter side (the enlarged diameter portion 41 side) of the through holes 21b and 22b, so that the gap between the through holes 21b and 22b and the metal pin 37 can be easily set. 38 can be filled.

  After the end of the first scanning step (S35A), a second scanning step (S35B) for removing the excess glass frit 38 remaining on the first surface 40a of the base substrate wafer 40 is performed. Specifically, as shown in FIG. 9C, the scanning conditions of the first squeegee 45 are the same as described above in a state where the tip of the second squeegee 46 is in contact with the first surface 40 a of the base substrate wafer 40. The first squeegee 45 is scanned in the direction opposite to the scanning direction (for example, from the other end side in the radial direction of the base substrate wafer 40 to one end side) (see the arrow in FIG. 9C). Accordingly, as shown in FIG. 9D, the glass frit 38 existing outside the through holes 21b and 22b (on the first surface 40a of the base substrate wafer 40) can be removed.

FIG. 10 is a cross-sectional view of the base substrate wafer, and is a process diagram for explaining the temporary drying process and subsequent steps.
Next, as shown in FIG. 10A, the glass frit 38 embedded in the through holes 21b and 22b in the filling step (S35) is temporarily dried (S36: temporary drying step). Specifically, the base substrate wafer 40 filled with the glass frit 38 is transferred into a drying furnace. Then, the inside of the drying furnace is maintained at, for example, about 80 ° C. under an atmospheric pressure atmosphere, and the base substrate wafer 40 is dried for about 30 minutes.

Here, the boiling point of the organic solvent blended in the glass frit 38 is lower than 85 ° C. Therefore, in the temporary drying step (S36), the organic solvent blended in the glass frit 38 is evaporated and removed. On the other hand, the melting point of the glass particles contained in the glass frit 38 is generally about 500 ° C. to 600 ° C., which is much higher than 85 ° C. which is the temperature of the temporary drying step (S36). Therefore, the glass frit 38 is not melted in the temporary drying step (S36). Moreover, the boiling point of the binder (ethyl cellulose) blended in the glass frit 38 is about 350 ° C., which is much higher than the temperature in the temporary drying step (S36). Therefore, the binder does not evaporate in the temporary drying step (S36).
As described above, since the glass particles of the glass frit 38 are not melted at this point, there is a gap between the glass particles. Therefore, the gas generated by the evaporation of the organic solvent flows through the gaps between the glass particles and is released out of the glass frit 38 (see the arrow in FIG. 10A).

  Here, in the temporary drying step (S36), the organic solvent mixed in the glass frit 38 evaporates, whereby the volume of the glass frit 38 decreases (shrinks). At this time, in the present embodiment, since the enlarged diameter portion 41 is formed in the through holes 21b and 22b, when the volume of the glass frit 38 is reduced, the glass frit 38 filled in the enlarged diameter portion 41 is transferred to the through hole 21. , 22 is entered. Therefore, the shortage of the glass frit 38 in the through holes 21 and 22 can be suppressed.

  Next, as shown in FIG. 10B, a binder removal process for removing the binder contained in the glass frit 38 is performed (S37). Specifically, the base substrate wafer 40 that has undergone the provisional drying step (S36) is transferred into a chamber of a heating furnace, and the inside of the heating furnace is maintained at, for example, about 420 ° C. in an air atmosphere and heated for about 1 hour. Thus, in the binder removal step (S37), by setting the temperature in the heating furnace higher than the boiling point of the binder and lower than the melting point of the glass particles, the binder can be evaporated without melting the glass particles. it can. As a result, the gas generated by the evaporation of the binder flows through the gaps between the glass particles and is efficiently released out of the glass frit 38 (see the arrow in FIG. 10B).

  Finally, the base substrate wafer 40 that has finished the binder removal step (S37) is transferred into a chamber of a baking furnace, and the glass particles contained in the glass frit 38 are baked to form the cylinder 32 (see FIG. 3). A firing step (S38) is performed. Specifically, as shown in FIG. 10C, the glass frit 38 is fired by maintaining the inside of the firing furnace in a temperature atmosphere of about 610 ° C. for about 30 minutes, for example. Thereafter, by cooling the base substrate wafer 40, the glass frit 38 is solidified to form the cylindrical body 32, and the cylindrical body 32, the core member 31 and the through holes 21 and 22 are fixed to each other, and the above-described through electrode. 8, 9 can be formed. At this time, the cylindrical body 32 is formed so as to fill up the large-diameter side opening of the through holes 21 and 22 (the small-diameter side opening of the enlarged diameter portion 41). The tip is not exposed.

  Here, the volume of the diameter-expanded portion 41 is set in consideration of the shrinkage rate (for example, about 60%) of the glass frit 38 in the drying step (S36) to the firing step (S38). That is, the volume of the enlarged-diameter portion 41 so that the cylindrical body 32 after the firing step (S38) fills up to the large-diameter side opening of the through holes 21 and 22 (the small-diameter side opening of the enlarged-diameter portion 41). Set. In order to satisfy the above-described conditions, in the present embodiment, the large-diameter side inner diameter D1 of the enlarged-diameter portion 41 is twice as large as the small-diameter-side inner diameter D2 (large-diameter-side inner diameter of the through holes 21 and 22). It is formed with the above size (D1> 2 · D2). Thereby, the quantity of the glass frit 38 which can be filled by one filling process (S35) can be increased reliably.

FIG. 11 is a cross-sectional view of the base substrate wafer and is a process diagram for explaining a polishing process.
Next, as shown in FIG. 11A, a polishing step is performed in which the second surface 40b side of the base substrate wafer 40 is polished to the broken line portion T2 after firing to remove the base portions 36 of the metal pins 37. Perform (S38). Thereby, the base part 36 which played the role which positioned the cylinder 32 and the core material part 31 can be removed, and only the core material part 31 can be left inside the cylinder 32. FIG.
At the same time, the first surface 40a side of the base substrate wafer 40 is polished to the broken line portion T3 to remove the enlarged diameter portion 41 and expose the tip of the core portion 31. As a result, a plurality of pairs of through electrodes 8 and 9 in which the cylindrical body 32 and the core member 31 are integrally fixed can be obtained. At this time, both surfaces 40a and 40b of the base substrate wafer 40 and both ends of the cylindrical body 32 and the core member 31 are substantially flush with each other. That is, both surfaces 40a and 40b of the base substrate wafer 40 and both end surfaces of the through electrodes 8 and 9 can be substantially flush with each other. When the polishing process is performed, the through electrode forming process (S32) is completed.

  Next, a conductive material is patterned on the second surface 40b of the base substrate wafer 40, and a lead electrode forming step is performed (S39). In this way, the base substrate wafer manufacturing process (S30) is completed.

(Assembly process)
Next, the piezoelectric vibrating reeds 5 created in the piezoelectric vibrating reed creating step (S10) are respectively formed on the routing electrodes 27 and 28 of the base substrate wafer 40 created in the base substrate wafer creating step (S30). It mounts via bumps B, such as gold (S40). Then, an overlaying step is performed in which the base substrate wafer 40 and the lid substrate wafer 50 created in the above-described production steps of the wafers 40 and 50 are overlaid (S50). Specifically, both wafers 40 and 50 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 5 is housed in a cavity C surrounded by the recess 3 a formed in the lid substrate wafer 50 and the base substrate wafer 40.

  After the superposition step (S50), the two superposed wafers 40, 50 are put into an anodic bonding apparatus (not shown), and the outer peripheral portion of the wafers 40, 50 is clamped by a holding mechanism (not shown) in a predetermined temperature atmosphere. A joining step of applying a predetermined voltage to perform anodic bonding is performed (S60). Specifically, a predetermined voltage is applied between the bonding material 23 and the lid substrate wafer 50. As a result, an electrochemical reaction occurs at the interface between the bonding material 23 and the lid substrate wafer 50, and the two are firmly bonded and anodically bonded. Thereby, the piezoelectric vibrating reed 5 can be sealed in the cavity C, and the wafer bonded body 60 in which the base substrate wafer 40 and the lid substrate wafer 50 are bonded can be obtained. Then, the two wafers 40 and 50 are anodically bonded as in the present embodiment, so that compared with the case where the two wafers 40 and 50 are bonded with an adhesive or the like, a shift due to deterioration with time, impact, etc. Thus, both wafers 40 and 50 can be bonded more firmly.

  Thereafter, a pair of external electrodes 6 and 7 electrically connected to the pair of through electrodes 8 and 9 are formed (S70), and the frequency of the piezoelectric vibrator 1 is finely adjusted (S80). Then, an individualizing step (S90) is performed for cutting the bonded wafer bonded body 60 along the cutting line M.

In the electrical characteristic inspection step (S100), the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of the resonance frequency and resonance resistance value), etc. of the piezoelectric vibrator 1 are measured and checked. In addition, the insulation resistance characteristics are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like.
Thus, the piezoelectric vibrator 1 is completed.

Thus, in the present embodiment, in the through hole forming step (S33), in addition to the through holes 21 and 22, in addition to the through holes 21 and 22, the diameter of the through holes 21 and 22 is gradually expanded from the opening edge. The diameter portion 41 is formed on the base substrate wafer 40.
According to this configuration, in the filling step (S35), the glass frit 38 can be filled not only in the through holes 21 and 22 but also in the enlarged diameter portion 41. Therefore, the glass frit 38 that can be filled in a single filling step (S35). The amount of can be increased. In this case, even if the volume of the glass frit 38 is reduced in the temporary drying step (S36) to the baking step (S38), compared to the case where the glass frit 206 is filled only in the through hole 205 as in the prior art, after the baking. The volume of the glass frit 38 existing in the through holes 21b and 22b can be increased. Thus, the number of times of filling and firing the glass frit 38 can be reduced, and a desired amount of the glass frit 38 (tubular body 32) having no dents or the like can be formed in the through holes 21 and 22, so that the piezoelectric vibrator 1 The production efficiency can be improved.

  In particular, in the present embodiment, by forming the enlarged diameter portion 41 so as to gradually increase the diameter from the opening edge of the through holes 21, 22, the through hole 205 and the glass frit filling portion 212 shown in FIG. Unlike the case of forming via 211, there is no place where the glass frit 38 accumulates as residue Z in the enlarged diameter portion 41. Thereby, when the volume of the glass frit 38 decreases, the glass frit 38 in the enlarged diameter portion 41 smoothly enters the through holes 21 and 22. Therefore, a sufficient effect can be obtained with respect to the increased amount of the glass frit 38 accompanying the addition of the enlarged diameter portion 41, so that a desired amount of the glass frit 38 (tubular body 32) can be surely placed in the through holes 21 and 22. Can be formed. Furthermore, the material loss of the glass frit 38 can also be reduced.

  In the piezoelectric vibrator 1 formed in this way, it is possible to suppress the formation of a recess or the like due to the volume reduction of the glass frit 38 in the cylindrical body 32, so that the electrode formed so as to cover the through electrodes 8 and 9. It is possible to suppress the occurrence of disconnection in the film (for example, the external electrodes 7 and 8 and the routing electrodes 27 and 28). As a result, the continuity between the inside and the outside of the cavity C can be secured, the reliability of the operation performance can be improved, and the performance can be improved.

  Furthermore, by forming the inner surface of the enlarged diameter portion 41 in a tapered shape, the glass frit 38 in the enlarged diameter portion 41 is reduced when the volume of the glass frit 38 is reduced by the temporary drying step (S36) to the firing step (S38). Enters the through holes 21 and 22 more smoothly.

(Oscillator)
Next, an embodiment of an oscillator according to the present invention will be described with reference to FIG.
As shown in FIG. 12, the oscillator 100 according to the present embodiment is configured such that the piezoelectric vibrator 1 is an oscillator electrically connected to the integrated circuit 101. The oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. The above-described integrated circuit 101 for the oscillator is mounted on the substrate 103, and the piezoelectric vibrating piece 5 of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101. The electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).

In the oscillator 100 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece 5 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 5 and input to the integrated circuit 101 as an electric signal. The input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal. Thereby, the piezoelectric vibrator 1 functions as an oscillator.
Further, by selectively setting the configuration of the integrated circuit 101, for example, an RTC (real-time clock) module or the like according to a request, the operation date and time of the device and the external device in addition to a single-function oscillator for a clock, etc. A function for controlling the time, providing a time, a calendar, and the like can be added.

  As described above, according to the oscillator 100 of the present embodiment, since the piezoelectric vibrator 1 described above is provided, the oscillator 100 having excellent reliability can be provided. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.

(Electronics)
Next, an embodiment of an electronic apparatus according to the present invention will be described with reference to FIG. Note that the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device. First, the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen. Further, when used as a communication device, it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.

(Portable information equipment)
Next, the configuration of the portable information device 110 of this embodiment will be described. As shown in FIG. 13, the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power. The power supply unit 111 is made of, for example, a lithium secondary battery. The power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel. The power unit 111 supplies power to each functional unit.

  The control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of audio data, measurement and display of the current time, and the like. The control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.

  The timer unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1. When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 5 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.

The communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
The wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125. The audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120. The amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level. The voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.

In addition, the ring tone generator 123 generates a ring tone in response to a call from the base station. The switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received. To the audio input / output unit 121.
The call control memory unit 124 stores a program related to incoming / outgoing call control of communication. The telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.

  When the voltage applied to each functional unit such as the control unit 112 by the power supply unit 111 falls below a predetermined value, the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop. . The predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V. Upon receiving the voltage drop notification from the voltage detection unit 116, the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.

That is, the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115. This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
In addition, the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.

  As described above, according to the portable information device 110 of the present embodiment, since the piezoelectric vibrator 1 described above is provided, the portable information device 110 having excellent reliability can be provided. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.

(Radio watch)
Next, an embodiment of a radio timepiece according to the present invention will be described with reference to FIG.
As shown in FIG. 14, the radio timepiece 130 of this embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 131, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
In Japan, there are transmitting stations (transmitting stations) that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves. Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide and the above two transmitting stations cover all of Japan is doing.

Hereinafter, the functional configuration of the radio timepiece 130 will be described in detail.
The antenna 132 receives a long standard wave of 40 kHz or 60 kHz. The long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave. The received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1. The piezoelectric vibrator 1 in this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency described above.

Further, the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134. Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136. The CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed.
Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.

  In addition, although the above-mentioned description was shown in the example in Japan, the frequency of the long standard wave is different overseas. For example, in Germany, a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.

  As described above, according to the radio timepiece 130 of the present embodiment, since the piezoelectric vibrator 1 described above is provided, the radio timepiece 130 having excellent reliability can be provided. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.

The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, a piezoelectric vibrator is manufactured by enclosing a piezoelectric vibrating piece inside the package while using the package manufacturing method according to the present invention. It is also possible to manufacture devices other than the piezoelectric vibrator by enclosing the parts.
In the above-described embodiment, the package manufacturing method of the present invention has been described by taking a piezoelectric vibrator using a tuning-fork type piezoelectric vibrating piece as an example. However, the present invention is not limited to this, and for example, an AT-cut type piezoelectric vibrating piece. The present invention may be applied to a piezoelectric vibrator or the like using (thickness-shear vibrating piece).

  Further, in the above-described embodiment, the through-electrodes 7 and 8 are formed by arranging the metal pins 37 erected from the base portion 36 in the through holes 21 and 22 and then polishing and removing the base portion 36. However, the present invention is not limited to this. For example, the through-holes 21 and 22 may be formed as bottomed recesses, and cylindrical metal pins may be disposed in the recesses to form the through-electrodes. However, the present embodiment is advantageous in that the metal pin can be disposed in the through hole without being tilted.

Furthermore, in the above-described embodiment, the shape of the through holes 21 and 22 is formed in a truncated cone shape having a tapered section, but may be formed in a substantially cylindrical shape having a straight shape instead of a tapered section. Even in this case, substantially the same operational effects as those of the above-described embodiment can be obtained by forming the enlarged diameter portion 41 that is gradually enlarged with respect to the through holes 21 and 22.
Furthermore, in the above-described embodiment, the diameter-expanded portion 41 is formed in a single-stage taper shape, but the present invention is not limited to this, and may be formed in a multi-stage taper shape of two or more stages.
Moreover, if the diameter-expanded part 41 is gradually diameter-expanded from the opening edge of the through-holes 21 and 22, it will not be restricted to a taper shape. For example, the inner surface of the enlarged diameter portion 41 may be formed as a curved surface. Moreover, you may form the boundary part of the enlarged diameter part 41 and the through-holes 21 and 22 in a curved surface.

DESCRIPTION OF SYMBOLS 1 ... Piezoelectric vibrator 5 ... Piezoelectric vibration piece (electronic component) 8, 9 ... Through-electrode 21, 22 ... Through-hole (metal pin arrangement | positioning part) 21b, 22b ... Through-hole (recessed part) 31 ... Core material part (metal pin) 36 ... Base part 37 ... Metal pin 38 ... Glass frit 40 ... Base substrate wafer (first substrate) 40a ... First surface 40b ... Second surface 41 ... Expanded portion 100 ... Oscillator 101 ... Oscillator integrated circuit 110 ... Mobile Information equipment (electronic equipment) 113 ... Timekeeping section of electronic equipment 130 ... Radio clock 131 ... Filter section of radio clock C ... Cavity

Claims (8)

A method of manufacturing a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded together,
A through electrode forming step of forming a through electrode that penetrates a first substrate made of a glass material among the plurality of substrates in a thickness direction and electrically connects the inside of the cavity and the outside of the plurality of substrates;
The through electrode forming step includes:
Forming a recess from the first surface side of the first substrate;
A metal pin placement step of inserting a metal pin into the recess,
A filling step of filling a glass frit between the recess and the metal pin;
A firing step of firing and curing the glass frit filled in the recess;
Polishing the first substrate to expose the metal pins on the first and second surfaces of the first substrate, and
In the recess forming step, a metal pin placement portion on which the metal pin is placed, and a diameter-expanded portion that gradually increases in diameter from the metal pin placement portion toward the first surface, in the thickness direction of the first substrate. Formed along
In the filling process, the glass frit is also filled in the enlarged diameter portion.   2. The package manufacturing method according to claim 1, wherein an inner surface of the enlarged diameter portion is formed in a tapered shape.   The said recessed part formation process WHEREIN: The internal diameter by the side of the said 1st surface in the said enlarged diameter part is formed more than twice the internal diameter by the side of the said 1st surface in the said metal pin arrangement | positioning part. Item 3. A method for manufacturing a package according to Item 2.   The package manufactured using the manufacturing method of the package of any one of Claim 1 thru | or 3.   A piezoelectric vibrator comprising a piezoelectric vibrating piece hermetically sealed in the cavity of the package according to claim 4.   The oscillator according to claim 5, wherein the piezoelectric vibrator is electrically connected to an integrated circuit as an oscillator.   6. An electronic apparatus, wherein the piezoelectric vibrator according to claim 5 is electrically connected to a timing unit.   6. A radio timepiece, wherein the piezoelectric vibrator according to claim 5 is electrically connected to a filter portion.

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