JP2012038796A - Semiconductor device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent an interlayer insulation film in a lower part of a trimming element from being cracked due to pressure of evaporation gas from the trimming element at the time of trimming.SOLUTION: A trimming element T is formed on an interlayer insulation film 2. An interlayer insulation film 3a covers the trimming element T. A crack inducing body G is formed on the interlayer insulation film 3a in a region obliquely over the trimming element T. The trimming element T and the crack inducing body G are disposed in a region to be irradiated with laser light. By the laser light irradiation, a high-temperature region 6 is formed extending widely while overlapping on the interlayer insulation film 3a and the like around the trimming element T and the crack inducing body G and the rigidity of the interlayer insulation film 3a and the like having high temperature is deteriorated. As a result, the pressure of evaporation gas is easily applied to a corner part of an upper part of the trimming element T and the pressure of the evaporation gas applied to a corner part of a lower part of the trimming element T decreases; thus, the occurrence of a crack 5 in the interlayer insulation film 2 in the lower part of the trimming element T can be prevented.

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device having a laser trimming element and a manufacturing method thereof.

Conventionally, trimming elements have been blown by laser light in order to adjust the specifications and performance of semiconductor devices and improve the performance and yield of finished products. Various configurations of the trimming elements T are conceivable. As an example, a configuration including a plurality of trimming elements T1, T2, T3, etc. as shown in FIG. 6 is also conceivable. This is a case where the output voltage _Vout from the internal circuit A is adjusted by the resistor R1 or the like.

  That is, the trimming element T1 is disposed between the internal circuit A and the resistor R1, the trimming element T2 is disposed between the resistor R2, and the trimming element T3 is disposed between the resistor R3. The trimming element T1 and the like are made of the same metal as the metal electrode wiring, and as shown in the plan view of FIG. 7A, the center part melted by the laser beam is thin and the end part is thick. FIG.7 (b) is AA sectional drawing of Fig.7 (a).

When the trimming element T1 is blown by the laser light, the output V _out of the internal circuit A is output from the internal circuit A through the resistors R2 and R3. When the trimming elements T1 and T2 are fused, V _out of the internal circuit A is output from the internal circuit A through the resistor R3. As a result, the output voltage _Vout adjusted to a desired value can be obtained.

  As shown in the sectional view of FIG. 7B, one or a plurality of trimming elements T1 and the like are provided on the interlayer insulating film 2 on the semiconductor substrate 1 on which various device elements are formed by thermal diffusion, ion implantation, and the like. The book is formed. A passivation silicon oxide film 3b is further formed on the trimming element T1 and the like.

  As a passivation protective film, initially, a silicon oxide film and a silicon nitride film are formed in this order in a two-layer structure by a predetermined CVD method. Thereafter, only the passivation silicon oxide film 3b is formed on the trimming element T1 or the like in order to remove the silicon nitride film or the like having the property of absorbing laser light on the trimming element T1 or the like.

  FIGS. 8A and 8B show a state when the trimming element T2 in the trimming element T1 and the like having such a structure is melted by laser light. 8A is a cross-sectional view after the fusing of the trimming element T2 when the passivation silicon oxide film 3b is not present or thin, and FIG. 8B is the trimming element T2 when the interlayer insulating film 3 is thick. It is sectional drawing after fusing.

  When the passivation silicon oxide film 3b on the trimming element T2 is thin, as shown in FIG. 8A, the trimming element T2 is melted and a small opening 4 is formed in the passivation silicon oxide film 3b above the trimming element T2. When the passivation silicon oxide film 3b on the trimming element T2 is thick, as shown in FIG. 8B, a large opening 4 is formed in the passivation silicon oxide film 3b and an interlayer insulating film below the trimming element T2 is formed. 2 has a crack 5.

  In severe cases, the crack 5 may reach the semiconductor substrate 1, and moisture or the like enters the semiconductor substrate 1 from the crack 5, causing a problem in reliability. In some cases, the metal of the trimming element T2 blown into the crack 5 may enter the semiconductor substrate 1 to cause an unexpected short-circuit failure, resulting in a decrease in yield. Further, when a crack 5 reaching the device element formation region is entered, a leak failure may occur.

  Problems and countermeasures of the laser trimming element are also disclosed in Patent Document 1 below.

JP-A-9-129739

  Based on FIG. 9, the reason why the crack 5 enters the interlayer insulating film 2 below the trimming element T when the passivation silicon oxide film 3 b above the trimming element T is thick will be described. A laser beam having an energy of hν per photon irradiates the trimming element T with a large number of photons continuously from above the semiconductor substrate 1. The trimming element T irradiated with the laser beam continuously obtains the energy of the laser beam, dissolves, and further vaporizes to become a vaporized gas. In the region around the portion where the trimming element T exists, the temperature rises, and a high temperature region 6 is formed across the interlayer insulating film 2 and the passivation silicon oxide film 3b.

  As shown in the figure, the metal vaporized gas constituting the vaporized trimming element T is confined in a narrow space where the trimming element T surrounded by the interlayer insulating film 2 and the silicon oxide film 3b for passivation is formed. It will be in the state. Therefore, a very large pressure based on Boyle-Charle's law is applied to the surrounding interlayer insulating film 2 and the wall surfaces of the passivation silicon oxide film 3b. In particular, a large pressure √2 times that of the other surface is applied to the corner portion of the space where the trimming element T is formed.

  As a result, the passivation silicon oxide film 3b and the interlayer insulating film 2 in the high temperature region 6 and the passivation silicon oxide film 3b and the interlayer on the outer side of the high temperature region 6 in the direction indicated by the dotted line from the corner in FIG. A large stress is applied between the insulating film 2 and the crack 5 as shown in FIG. 8B enters the interlayer insulating film 2 and the passivation silicon oxide film 3b in the direction of the dotted line. The crack 5 advances in the direction of 45 ° up and down indicated by a dotted line with respect to the horizontal plane.

  As the thickness of the passivation silicon oxide film 3b increases, the length of the crack 5 traveling in the interlayer insulating film 2 increases, and finally reaches the semiconductor substrate 1. The thinner the passivation silicon oxide film 3b, the shorter the crack 5 that travels in the interlayer insulating film 2. Therefore, the thickness of the passivation silicon oxide film 3b on the trimming element T needs to be as thin as possible in order to reduce the crack 5 in the interlayer insulating film 2.

  However, if the passivation silicon oxide film 3b on the trimming element T is too thin, the trimming element T that is not the object of trimming may corrode due to the intrusion of moisture or the like. If the trimming element T that is not the object of trimming is corroded or the like, the internal circuit A and the resistor R in FIG.

  Accordingly, the passivation silicon oxide film 3b on the trimming element T is made thick so that the trimming element T is not corroded by moisture or the like entering from the passivation silicon oxide film 3b, and the interlayer insulating film below the trimming element T It is necessary to construct a trimming element T that does not cause crack 5 to enter 2 or is small enough to exit even if it enters.

  The semiconductor device of the present invention is a semiconductor device including a laser trimming element, and is a trimming element formed on an interlayer insulating film of a semiconductor substrate on which a device element is formed, obliquely above the trimming element, And a crack derivative formed in an interlayer insulating film covering the trimming element.

  Further, the semiconductor device of the present invention is characterized in that the trimming element and the crack derivative are disposed within the irradiation range of the trimming laser beam.

  In the semiconductor device of the present invention, the trimming element is formed on the second interlayer insulating film from the top, and the crack derivative is formed on the uppermost interlayer insulating film. Both the trimming element and the crack derivative are provided. Is made of aluminum.

  In the semiconductor device of the present invention, the trimming element is formed of aluminum on the second interlayer insulating film from the top, and the crack derivative is formed on the uppermost interlayer insulating film covering the trimming element. It is made of tungsten embedded in a via hole.

  The semiconductor device of the present invention is characterized in that a passivation silicon oxide film is formed on the crack derivative.

  The semiconductor device of the present invention is characterized in that the crack derivative is formed by being divided in a current direction of the trimming element.

  A method of manufacturing a semiconductor device according to the present invention is a semiconductor device including a laser trimming element, the step of forming a trimming element on an interlayer insulating film of a semiconductor substrate on which a device element is formed, and a diagonally upper side of the trimming element And forming a crack derivative in an interlayer insulating film covering the trimming element.

  The semiconductor device manufacturing method of the present invention is characterized in that the trimming element and the crack derivative are arranged within the irradiation range of the trimming laser beam.

  In the method of manufacturing a semiconductor device according to the present invention, the trimming element is formed on the second interlayer insulating film from the top, and the crack derivative is formed on the uppermost interlayer insulating film, and the trimming element and the crack derivative are formed. Both of them are made of aluminum.

  In the semiconductor device manufacturing method of the present invention, the trimming element is formed of aluminum on the second interlayer insulating film from the top, and the crack derivative is formed on the uppermost interlayer insulating film covering the trimming element. It is characterized by being formed of tungsten embedded in the via hole.

  The semiconductor device manufacturing method of the present invention is characterized in that a passivation silicon oxide film is formed on the crack derivative.

  The method for manufacturing a semiconductor device according to the present invention is characterized in that the crack derivative is formed by dividing in a current direction of the trimming element.

  According to the semiconductor device and the manufacturing method thereof of the present invention, it is possible to prevent cracks from forming in the interlayer insulating film below the trimming element, and the yield and reliability of the semiconductor device can be improved.

It is sectional drawing which shows the state at the time of the semiconductor device which concerns on the 1st Embodiment of this invention, its manufacturing method, and a laser beam irradiation. 1 is a plan view showing a semiconductor device and a manufacturing method thereof according to a first embodiment of the present invention. 2 is a cross-sectional view showing the vicinity of a trimming element formation region after laser trimming of the semiconductor device according to the first embodiment of the present invention; FIG. It is sectional drawing which shows the state at the time of the semiconductor device which concerns on the 2nd Embodiment of this invention, its manufacturing method, and a laser beam irradiation. FIG. It is sectional drawing which shows the trimming element formation area vicinity after the laser trimming of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is a circuit diagram which shows an example of a structure of a laser trimming element. It is the top view and sectional drawing which show an example of a structure of a laser trimming element. It is a figure which shows the filming method of the silicon oxide film etc. for passivation on a laser trimming element, and how to enter the crack to the interlayer insulation film under this trimming element. It is sectional drawing which shows the state at the time of the conventional semiconductor device and laser beam irradiation.

[First Embodiment]
This embodiment will be described with reference to FIG. FIG. 1 is a cross-sectional view showing a state in which a laser beam indicated by an arrow is irradiated from above the semiconductor substrate 1 to a formation region of a trimming element T and a crack derivative G (to be described later) of the semiconductor device in the present embodiment. FIG. 2 is a plan view of a region where the trimming element T and the crack derivative G are formed, and FIG.

  A region surrounded by a dotted line in FIG. 2 is a laser light irradiation region. That is, the laser light is applied to both the trimming element T and the crack derivative G.

  In the formation region of the trimming element T, an interlayer insulating film 2 is formed on the semiconductor substrate 1 on which device elements such as a bipolar transistor and a MOS transistor (not shown) are formed. The interlayer insulating film 2 includes an element isolation film formed by a LOCOS (Local Oxidation of Silicon) method, a silicon oxide film deposited by a predetermined CVD method, a BPSG film, and the like.

  Further, the interlayer insulating film 2 is composed of several interlayer insulating films, and each of the interlayer insulating films is made of aluminum (Al) or the like connected to each other through via holes formed in the interlayer insulating film. A wiring electrode is formed. A trimming element T made of aluminum (Al) or the like is formed on the interlayer insulating film 2.

  An interlayer insulating film 3a which is the uppermost layer is formed on the interlayer insulating film 2 on which the trimming element T is formed. On the interlayer insulating film 3a, a pad electrode made of aluminum (Al) (not shown) or the like connected to a lower electrode wiring through a via hole formed in the interlayer insulating film 3a is formed. At the same time, as shown in FIG. 2, crack derivatives G made of aluminum (Al) or the like are formed on both sides of the trimming element on the interlayer insulating film 3a and obliquely above the trimming element as shown in FIG. It is formed.

  As shown in FIG. 2, the left and right crack derivatives G of the trimming element T are formed in a plurality of island shapes that are not integrated with each other. When the left and right crack derivatives G of the trimming element T are integrally formed, or when the left and right crack derivatives G are integrally formed into a rectangular shape, the trimming element T blown by laser trimming is the crack derivative G. This is to prevent reconnection through a fusing residue or the like.

  Further, the diagonally upward direction of the trimming element T on which the crack derivative G is formed is preferably the pressure direction of the vaporized gas indicated by an arrow from the corner portion on the upper side of the trimming element T shown in FIG. In other words, it is 45 ° obliquely above the upper surface of the trimming element T. This is because the high-temperature region 6 formed in an interlayer insulating film 3a, which will be described later, is formed as wide as possible.

  A passivation silicon oxide film 3b is formed on the crack derivative G. Initially, a two-layer film such as a silicon oxide film and a silicon nitride film is deposited as a passivation film covering the crack derivative G and the pad electrode by the CVD method, but the silicon nitride film is removed from the trimming element T formation region. . This is because the silicon nitride film absorbs laser light and prevents the trimming efficiency from being lowered.

  FIG. 3 shows a schematic cross-sectional view when the trimming element T of the present embodiment in which the crack derivative G is formed is melted by laser light. The trimming element T and the crack derivative G in the portion indicated by the dotted line dissolve, vaporize and disappear upon receiving the energy of the laser beam. Due to the pressure of vaporized gas from the aluminum (Al) constituting the trimming element T and the crack derivative G, the interlayer insulating film 3a and the passivation silicon oxide film 3b in the vicinity of the trimming element T and the crack derivative G Crack 5 enters and is removed by destruction.

  As a result, as shown in the figure, an opening 4 is formed from the interlayer insulating film 3a to the passivation silicon oxide film 3b around the region where the trimming element T is present. In this case, the crack 5 does not enter the interlayer insulating film 2 side, or even if it enters, it becomes a small crack 5.

  In the case of the trimming element of this embodiment, the reason why the crack 5 is difficult to enter the interlayer insulating film 2 on the lower side of the trimming element T even when trimming with laser light is described below with reference to FIG. The aluminum (Al) constituting the trimming element T or crack derivative G that has received the energy of the laser beam first melts to become aluminum (Al) as a liquid when the temperature reaches about 660 ° C.

  The laser light continuously supplies photons having an energy of E = hν per one. Here, h represents the Plato constant, and ν represents the frequency of the laser beam. Therefore, the temperature of the liquefied aluminum (Al) further rises, and when the vaporization temperature reaches 2470 ° C., it vaporizes violently. The vaporized aluminum (Al) vaporized gas occupies a large volume in an open state, but it is confined in a small space where the trimming element T and crack derivative G were present, and thus a very large pressure that follows Boyle-Charles' law. Is added to the side wall of the small region where the trimming element T or the like was formed.

  In particular, since the horizontal pressure and the vertical pressure are superimposed on the corner portion of the region where the trimming element T and the like are formed, as shown by the arrows in FIG. A pressure of √2 times the pressure is applied. Therefore, when the conventional crack derivative G shown in FIG. 9 does not exist, a large stress is applied in the dotted line direction of FIG. 9 and the crack 5 enters the interlayer insulating film 2 and the like in the same direction as described above.

  On the other hand, since the crack derivative G exists in this embodiment, a mode differs. The high temperature region 6 formed in the interlayer insulating film 3a and the like around the trimming element T and the high temperature region 6 formed in the interlayer insulating film 3a and the like around the crack derivative G overlap. In this case, it is preferable to dispose the crack derivative so that the lower corner portion of the crack derivative G comes in the pressure direction of the vaporized gas from the upper corner portion of the trimming element T because the overlapping width of the high temperature regions 6 is increased.

  The interlayer insulating film 2 or the like in the high temperature region 6 has lower rigidity than the interlayer insulating film 2 or the like in the region near the room temperature around it. For this reason, of the four corners of the region where the trimming element T is present, the upper two corners are wide including the interlayer insulating film 3a having a low rigidity in the pressure direction indicated by the outer dotted line including the part around the crack derivative G. Is formed. On the other hand, since the crack derivative G does not exist outside the two corners on the lower side, the high temperature region 6 is narrower than outside the two corners on the upper side, and the interlayer insulating film 2 having low rigidity becomes narrow.

  Therefore, the pressure of the vaporized aluminum (Al) gas that flows from the inside of the region where the trimming element is present to the outside mainly causes the interlayer insulation from the two corner portions of the upper side among the four corner portions of the region where the trimming element T is present. It works toward the low-rigidity high-temperature region 6 that overlaps the film 3a and the passivation silicon oxide film 3b. As a result, of the four corner portions of the region where the trimming element T is present, the pressure that goes diagonally downward from the two lower corner portions is reduced.

  Further, since only the thin silicon oxide film 3b for passivation is present on the region where the crack derivative G is present, the crack 5 directed upward from the two upper corners of the corner portion of the region where the crack derivative G is present. Is easily formed. As a result, cracks 5 are generated obliquely upward in the dotted line direction from the two corners on the upper side of the region where the trimming elements T exist in a chain.

  Accordingly, the vaporized aluminum (Al) gas in the region in which the trimming element T is present and the region in which the crack derivative G is present is discharged to the outside through the crack 5, and the interlayer insulating film 3a containing the crack 5; The passivation silicon oxide film 3b is blown out.

  In FIG. 1, the interlayer insulating film 3 a and the passivation silicon oxide film 3 b in the region surrounded by the high temperature region 6 formed around the trimming element T and around the left and right crack derivatives G are strong from the temperature difference from the high temperature region 6. Due to the stress, the cracks 5 are likely to enter from the inner corners of the upper sides of the left and right crack derivatives G in FIG. Further, cracks 5 as indicated by long arrows are easily formed from the upper side of the region where the trimming element T is present, and the vaporized gas of aluminum (Al) is also released from that portion.

  According to this embodiment, since the interlayer insulating film 3a and the passivation silicon oxide film 3b are formed on the trimming element T in a two-layer structure, it is possible to prevent moisture and the like from entering the trimming element T. Further, a wide high temperature region 6 is formed so as to overlap the periphery of the trimming element T and the crack derivative G, and the pressure of the vaporized gas of aluminum (Al) constituting the trimming element T is guided upward to the interlayer insulating film 2. Reduce the pressure of vaporized gas.

  Further, only the thin passivation silicon oxide film 3b is formed on the crack derivative G, and the crack 5 enters the passivation silicon oxide film 3b and the interlayer insulating film 3a in a chain structure. This interlayer insulating film 2 prevents cracks 5 from entering.

  Note that the crack derivative G is only covered with the passivation silicon oxide film 3b, and when viewed over a long period of time, the crack derivative G that has not been irradiated with the laser beam and has retained the original shape is infiltrated with moisture or the like. There is a risk of corrosion. However, the crack derivative G is isolated from the trimming element T or the like and does not cause a problem even if it is corroded.

  Next, a method for manufacturing the semiconductor device of this embodiment will be briefly described with reference to FIG. A semiconductor substrate 1 is prepared, and various impurity layers which are constituent elements of a bipolar transistor or a MOS transistor are formed on the semiconductor substrate 1 by a predetermined method by an ion implantation method or a thermal diffusion method.

  A silicon oxide film such as an element isolation insulating film or a gate insulating film is formed on the surface of the semiconductor substrate 1 by a predetermined method. On the silicon oxide film or the like, a silicon oxide film, a BPSG film, and further an interlayer insulating film 2 made of SOG are formed in a multilayer structure by a CVD method. On each interlayer insulating film having a multilayer structure, a metal wiring connected to a lower-layer metal wiring through a via hole formed in the interlayer insulating film is formed.

  Next, a trimming element T is formed by performing a predetermined photoetching process on aluminum (Al) or the like deposited on the interlayer insulating film 2 simultaneously with other metal wirings by a predetermined sputtering method or the like. As shown in FIGS. 6 and 7, the trimming element T is connected to the internal circuit A, the resistor R1, and the like formed on the semiconductor substrate 1 through another metal wiring.

  Next, an interlayer insulating film 3a is deposited on the semiconductor substrate 1 including the trimming element T and the like by predetermined CVD. In the interlayer insulating film 3a, via holes similar to those formed in the respective interlayer insulating films constituting the interlayer insulating film 2 are formed. Next, aluminum (Al) or the like deposited on the interlayer insulating film 3a by a predetermined sputtering method or the like is subjected to a predetermined photo-etching process so that, as shown in FIG. A plurality of separated crack derivatives G are formed.

  The crack derivative G is formed on both sides of the trimming element T and obliquely above the trimming element T. The reason is as described above. Like the trimming element T, the formation region of the crack derivative G is a laser light irradiation region. Finally, a passivation silicon oxide film and a silicon nitride film are deposited in this order on the semiconductor substrate 1 including the pad electrode and the crack derivative G by a predetermined CVD method.

Thereafter, the silicon nitride film on the formation region of the trimming element T is removed. This is because the silicon nitride film absorbs the laser light and attenuates the laser light reaching the trimming element T. Needless to say, the silicon oxide film for passivation is removed on the pad electrode and the like.
[Second Embodiment]
This embodiment will be described below with reference to FIGS. FIG. 4 is a cross-sectional view of the present embodiment, showing a state in which laser light is irradiated from above and aluminum (Al) constituting the trimming element T is vaporized, and the vaporized gas applies pressure to the side wall. The difference from the first embodiment is that the crack derivative G is formed of tungsten (W) that fills the via hole of the interlayer insulating film 3a covering the trimming element T. Accordingly, the plan view is the same as FIG.

  Tungsten (W) is a refractory metal having a melting point of 3,380 ° C. and a boiling point of 5,555 ° C., which is higher than the aluminum (Al) constituting the trimming element T. Therefore, even if the aluminum (Al) constituting the trimming element T is vaporized, the tungsten (W) of the crack derivative G is still in a solid shape, and the interlayer dielectric film 3a around the crack derivative G and the silicon for passivation are used. The pressure exerted on the oxide film 3b is small.

  However, since the temperature of tungsten (W) in the crack derivative G becomes higher than the vaporization temperature of aluminum (Al), the interlayer dielectric film 3a and the silicon oxide film 3b for passivation around the crack derivative G in FIG. The temperature of the high temperature region 6 becomes higher than the temperature of the high temperature region 6 around the trimming element T.

  Therefore, the interlayer insulating film 3a and the silicon oxide film 3b for passivation that are not at a high temperature surrounded by the high temperature region 6 around the crack derivative G and the high temperature region 6 around the trimming element G have a large temperature difference. More stress than in the first embodiment. As a result, of the vaporized aluminum (Al) gas formed by the trimming element T, the crack 5 enters the interlayer insulating film 3a and the like in the portion due to the pressure in the direction of the arrow that is long and upward.

  Finally, as shown in FIG. 5, an opening 4 is formed in the upper part of the region where the trimming element T was present. Also in the present embodiment, the high temperature region 6 due to the trimming element T and the high temperature region 6 due to the crack derivative G are overlapped and formed wider outside the upper corner portion of the trimming element T than outside the lower corner portion. Further, the pressure of the vaporized gas tends to be directed in the direction indicated by the dotted arrow, and the crack 5 is not easily formed in the interlayer insulating film 2 below the trimming element T.

  The manufacturing method of the semiconductor device of this embodiment is basically the same as that of the first embodiment. The difference from the first embodiment is the formation position and material of the crack derivative G. The crack derivative G is made of tungsten embedded in the via hole 7 formed in the interlayer insulating film 3a.

  The present invention is not limited to the first and second embodiments, but extends to embodiments having the same technical idea. For example, it extends to a form in which the first embodiment and the second embodiment are combined. Further, the trimming element T is formed on the lower interlayer insulating film, and the crack derivative G is formed on each of the upper interlayer insulating films.

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Interlayer insulating film 3a Interlayer insulating film
3b Silicon oxide film for passivation 4 Opening 5 Crack
6 High temperature region 7 Via hole T, T1, T2, T3 Trimming element
G crack derivative

Claims (12)

A semiconductor device comprising a laser trimming element,
A trimming element formed on the interlayer insulating film of the semiconductor substrate on which the device element is formed;
And a crack derivative formed in an interlayer insulating film covering the trimming element and obliquely above the trimming element.   The semiconductor device according to claim 1, wherein the trimming element and the crack derivative are disposed within a trimming laser beam irradiation range.   The trimming element is formed on the second interlayer insulating film from above, and the crack derivative is formed on the uppermost interlayer insulating film, and both the trimming element and the crack derivative are made of aluminum. The semiconductor device according to claim 1 or 2.   The trimming element is formed of aluminum on the second interlayer insulating film from the top, and the crack derivative is made of tungsten embedded in a via hole formed in the uppermost interlayer insulating film covering the trimming element. The semiconductor device according to claim 1, wherein:   5. The semiconductor device according to claim 3, wherein a passivation silicon oxide film is formed on the crack derivative.   6. The semiconductor device according to claim 1, wherein the crack derivative is formed by being divided in a current direction of the trimming element. A semiconductor device comprising a laser trimming element,
Forming a trimming element on the interlayer insulating film of the semiconductor substrate on which the device element is formed;
And a step of forming a crack derivative in an interlayer insulating film covering the trimming element and obliquely above the trimming element.   The method of manufacturing a semiconductor device according to claim 7, wherein the trimming element and the crack derivative are arranged within an irradiation range of a trimming laser beam.   The trimming element is formed on the second interlayer insulating film from the top and the crack derivative is formed on the uppermost interlayer insulating film, and both the trimming element and the crack derivative are made of aluminum. A method for manufacturing a semiconductor device according to claim 7 or 8.   The trimming element is formed of aluminum on the second interlayer insulating film from the top, and the crack derivative is formed of tungsten embedded in a via hole of the uppermost interlayer insulating film covering the trimming element. A method for manufacturing a semiconductor device according to claim 7 or 8.   11. The method of manufacturing a semiconductor device according to claim 9, wherein a passivation silicon oxide film is formed on the crack derivative.   The method for manufacturing a semiconductor device according to claim 1, wherein the crack derivative is formed by being divided in a current direction of the trimming element.

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