JP2012019164A - 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート - Google Patents
流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート Download PDFInfo
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Abstract
【解決手段】流路付きプレートは、流体を流通させる流路がプレートの内部に形成された流路付きプレートであって、金属又は合金によって形成され、流路となる溝が設けられた本体プレートと、上記溝を覆う蓋プレートと、金属又は合金の粉体をガスと共に加速し、本体プレート及び蓋プレートに向けて固相状態のままで吹き付けることにより形成され、蓋プレートを覆う堆積層とを備える。
【選択図】図1B
Description
図1Aは、本発明の実施の形態1に係る流路付きプレートの構造を示す上面図である。また、図1Bは、図1AのA−A断面図である。
流路付きプレート100は、流体(ガス又は液体)を流通させる流路102が設けられた本体プレート101と、流路102を覆う蓋プレート103と、該蓋プレート103を覆う堆積層104とを備えている。本体プレート101には、蓋プレート103を流路102の上方に支持する支持部107が設けられている。また、流路102の端部は、流路102に流体を導入する流体導入口105、及び、流路102から流体を導出する流体導出口106となっている。
次いで、図3Bに示すように、本体プレート101の一方の主面(蓋プレート配置面108)に、切削加工等により流路102となる溝109を形成すると共に、該溝109の開口縁部を切り欠くことにより支持部107を形成する。この支持部107の幅Wは、蓋プレート103を支持できる程度、即ち、溝109の幅WGRより若干広い程度であれば良い。また、支持部107の深さDは、蓋プレート103と同程度であれば良い。なお、流路102の断面形状は長方形に限定されず、任意の形状(例えば、角が丸い長方形や、台形や、三角形や、半円形や、半楕円形等)に形成しても良い。
図4は、変形例1を示す断面図である。図4に示す流路付きプレート110においては、蓋プレート103を支持する支持部12の深さD1を、蓋プレート103の厚さよりも大きくしている。この場合には、流路111を本体プレート101のより深部に設けることができる。
次に、本発明の実施の形態2に係る流路付きプレートについて説明する。本実施の形態2においては、流路付きプレートを、CVD法(化学気相成長法)による成膜装置等において、成膜チャンバ内に備えられて基板を冷却するコールドプレートとして用いる。図8Aは、実施の形態2に係る流路付きプレートであるコールドプレートを示す上面図である。また、図8Bは、図8Aに示すコールドプレートを示す一部断面側面図である。
なお、本実施の形態2においては、堆積層204側の表面を基板の載置面とするため、熱媒体導入路205及び熱媒体導出路206を本体プレート201側に設けたが、反対に、本体プレート201側の表面を基板の載置面とし、熱媒体導入路205及び熱媒体導出路206を堆積層204側に設けても良い。
次に、本発明の実施の形態3に係る流路付きプレートについて説明する。本実施の形態3においては、流路付きプレートを、CVD法による成膜装置等において、成膜チャンバ内に備えられて2種類の成膜ガスを基板に供給するシャワープレートに適用する。図9Aは、実施の形態3に係る流路付きプレートであるシャワープレートを示す上面図である。また、図9Bは、図9AのB−B断面図である。
次いで、図10Bに示すように、切削加工等により、本体プレート301の一方の主面に第1流路302となる溝306を形成すると共に、該溝306の開口縁部を切り欠くことにより支持部307を形成する。そして、図10Cに示すように、溝306の開口と略等しい形状(例えば、相似形)であり、該開口より大きな面積を有するアルミニウム合金の蓋プレート303を、支持部307に配置する。
次に、本発明の実施の形態4に係る流路付きプレートについて説明する。本実施の形態4においては、流路付きプレートを、実施の形態3と同様に、2種類のガスを成膜チャンバ内の基板に供給するシャワープレートに適用する。図11は、実施の形態4に係る流路付きプレートであるシャワープレートを示す断面図である。なお、該シャワープレートの上面図は、図9Aに示すものと同様である。
次いで、図12Bに示すように、本体プレート401の一方の主面に、第1流路402となる溝407を形成すると共に、該溝407の開口縁部を切り欠くことにより支持部408を形成する。また、本体プレート401の他方の主面に、第2流路412となる溝417を形成すると共に、該溝417の開口縁部を切り欠くことにより支持部418を形成する。
2 基板
3 堆積層
10 成膜装置
11 ガス導入管
11a、11b バルブ
12a 粉体供給管
12 粉体供給部
13a ガス用配管
13 ヒータ
14 チャンバ
15 ノズル
16 ホルダ
100 プレート
102、111、121、131、202 流路
103、141、203、303、313、403、413 蓋プレート
104、204、311、321、404、414 堆積層
105 流体導入口
106 流体導出口
108、208 蓋プレート配置面
109、306、316、407、417 溝
200 コールドプレート
201、301、401 本体プレート
205 熱媒体導入路
206 熱媒体導出路
107、207、307、317、408、418 支持部
211、331、421 シャフト
213 冷却媒体排出管
212 冷却媒体供給管
300、400 シャワープレート
302、402 第1流路
304、405 第1ガス導入路
305、406 第1ガス導出孔
312、412 第2流路
314、415 第2ガス導入路
315、416 第2ガス導出孔
332、422 第1ガス供給管
333、423 第2ガス供給管
Claims (13)
- 流体を流通させる流路がプレートの内部に形成された流路付きプレートの製造方法において、
金属又は合金によって形成された本体プレートに、前記流路となる溝を形成する流路形成工程と、
前記溝を覆う蓋プレートを、前記溝の上部に配置する蓋配置工程と、
金属又は合金の粉体をガスと共に加速し、前記本体プレート及び前記蓋プレートに向けて固相状態のままで吹き付けることにより、前記蓋プレートを覆う堆積層を形成する堆積層形成工程と、
を含むことを特徴とする流路付きプレートの製造方法。 - 前記堆積層形成工程は、コールドスプレー法により行われることを特徴とする請求項1に記載の流路付きプレートの製造方法。
- 前記蓋プレートの前記溝を覆う面は、前記溝の開口と略等しい形状を有すると共に、前記開口より面積が大きいことを特徴とする請求項1又は2に記載の流路付きプレートの製造方法。
- 前記本体プレート、又は、前記蓋プレート及び前記堆積層に、前記流路に連通する孔を形成する孔形成工程をさらに含むことを特徴とする請求項1〜3のいずれか1項に記載の流路付きプレートの製造方法。
- 流体を流通させる流路がプレートの内部に形成された流路付きプレートにおいて、
金属又は合金によって形成され、流路となる溝が設けられた本体プレートと、
前記溝を覆う蓋プレートと、
金属又は合金の粉体をガスと共に加速し、前記本体プレート及び前記蓋プレートに向けて固相状態のままで吹き付けることにより形成され、前記蓋プレートを覆う堆積層と、
を備えることを特徴とする流路付きプレート。 - 前記堆積層は、コールドスプレー法により形成されていることを特徴とする請求項5に記載の流路付きプレート。
- 前記本体プレート及び前記蓋プレート及び前記堆積層は、各々、アルミニウム(Al)、アルミニウム系合金、チタン(Ti)、チタン系合金、ステンレス鋼、銅(Cu)、銅系合金の内のいずれかによって形成されていることを特徴とする請求項5又は6に記載の流路付きプレート。
- 前記本体プレートと前記蓋プレートと前記堆積層との内の少なくとも1つは、前記本体プレートと前記蓋プレートと前記堆積層との内の他の1つ又は2つとは異なる金属又は合金によって形成されていることを特徴とする請求項7に記載の流路付きプレート。
- 前記溝は、前記本体プレートの第1の主面及び該第1の主面とは反対側の第2の主面に形成されていることを特徴とする請求項5〜8のいずれか1項に記載の流路付きプレート。
- 前記堆積層に、第2の流路となる第2の溝が形成されており、
前記第2の溝を覆う第2の蓋プレートと、
金属又は合金の粉体をガスと共に加速し、前記堆積層及び前記第2の蓋プレートに向けて固相状態のままで吹き付けることにより形成され、前記第2の蓋プレートを覆う第2の堆積層と、
をさらに備えることを特徴とする請求項5〜8のいずれか1項に記載の流路付きプレート。 - 請求項5〜8のいずれか1項に記載の流路付きプレートを備え、
前記流路付きプレートに、前記流路に連通して該流路に熱媒体を導入する熱媒体導入路と、前記流路に連通して該流路から熱媒体を導出する熱媒体導出路とが設けられていることを特徴とする温度調節プレート。 - 請求項5〜8のいずれか1項に記載の流路付きプレートを備え、
前記流路付きプレートに、前記流路に連通して該流路に冷却媒体を導入する熱媒体導入路と、前記流路に連通して該流路から冷却媒体を導出する熱媒体導出路とが設けられていることを特徴とするコールドプレート。 - 請求項5〜10のいずれか1項に記載の流路付きプレートを備え、
前記流路付きプレートに、前記流路に連通して該流路に所定の成分を有するガスを導入するガス導入路と、前記流路に連通して該流路から前記ガスを導出するガス導出孔とが設けられていることを特徴とするシャワープレート。
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| JP2010157235A JP5463224B2 (ja) | 2010-07-09 | 2010-07-09 | 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート |
| PCT/JP2011/065507 WO2012005305A1 (ja) | 2010-07-09 | 2011-07-06 | 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート |
| EP11803639.1A EP2592647B1 (en) | 2010-07-09 | 2011-07-06 | Manufacturing method for plate |
| US13/808,783 US10279441B2 (en) | 2010-07-09 | 2011-07-06 | Method of manufacturing plate with passage, plate with passage, temperature adjustment plate, cold plate, and shower plate |
| CN201180030775.8A CN102959696B (zh) | 2010-07-09 | 2011-07-06 | 带流路板的制造方法、带流路板、温度调节板、冷板及淋浴板 |
| KR1020137000378A KR101409953B1 (ko) | 2010-07-09 | 2011-07-06 | 유로가 있는 플레이트의 제조 방법, 유로가 있는 플레이트, 온도 조절 플레이트, 콜드 플레이트, 및 샤워 플레이트 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010209389A (ja) * | 2009-03-09 | 2010-09-24 | Kanto Auto Works Ltd | 温度調節管を有する電鋳殻の製造方法 |
| JP2013169038A (ja) * | 2012-02-14 | 2013-08-29 | Fanuc Ltd | 補強構造が形成されたかご形導体を備える回転子及びその製造方法 |
| JP2014192372A (ja) * | 2013-03-27 | 2014-10-06 | Tokyo Electron Ltd | マイクロ波加熱処理装置 |
| KR20150038154A (ko) * | 2012-07-18 | 2015-04-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중-구역 온도 제어 및 다중 퍼지 성능을 갖는 페데스탈 |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
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| US9837284B2 (en) | 2014-09-25 | 2017-12-05 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
| US9837249B2 (en) | 2014-03-20 | 2017-12-05 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
| US9842744B2 (en) | 2011-03-14 | 2017-12-12 | Applied Materials, Inc. | Methods for etch of SiN films |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
| US9885117B2 (en) | 2014-03-31 | 2018-02-06 | Applied Materials, Inc. | Conditioned semiconductor system parts |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| KR101876548B1 (ko) * | 2016-12-30 | 2018-07-09 | 상구정공(주) | 샤워헤드 플레이트 및 이의 제작방법 |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
| US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
| US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
| US10062578B2 (en) | 2011-03-14 | 2018-08-28 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
| US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
| US10147620B2 (en) | 2015-08-06 | 2018-12-04 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
| KR20190010731A (ko) * | 2013-05-07 | 2019-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
| US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
| US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
| US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| JP2019515506A (ja) * | 2016-05-06 | 2019-06-06 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 全エリア逆流熱交換の基板支持体 |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
| US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
| US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
| US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| JP2020033614A (ja) * | 2018-08-30 | 2020-03-05 | 住友金属鉱山株式会社 | 成膜装置と成膜方法 |
| US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| CN111293057A (zh) * | 2018-12-07 | 2020-06-16 | 应用材料公司 | 部件、制造部件的方法、以及清洁部件的方法 |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| KR102199738B1 (ko) * | 2020-04-24 | 2021-01-08 | (주)코리아스타텍 | 건식 식각장비용 직냉식 정전척 |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| WO2025047725A1 (ja) * | 2023-08-30 | 2025-03-06 | 京セラ株式会社 | 試料保持具 |
| US12340979B2 (en) | 2017-05-17 | 2025-06-24 | Applied Materials, Inc. | Semiconductor processing chamber for improved precursor flow |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5343574B2 (ja) * | 2009-01-20 | 2013-11-13 | トヨタ自動車株式会社 | ヒートシンクのろう付け方法 |
| TWI372081B (en) * | 2010-02-02 | 2012-09-11 | Hermes Epitek Corp | Showerhead |
| US20190118442A9 (en) * | 2010-04-20 | 2019-04-25 | Honda Motor Co., Ltd. | Conforming cooling method and mold |
| JP5712054B2 (ja) * | 2011-05-31 | 2015-05-07 | 日本発條株式会社 | シャフト付きヒータユニットおよびシャフト付きヒータユニットの製造方法 |
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| US10079165B2 (en) * | 2014-05-20 | 2018-09-18 | Applied Materials, Inc. | Electrostatic chuck with independent zone cooling and reduced crosstalk |
| DE102014014393A1 (de) | 2014-10-02 | 2016-04-07 | E E T Energie-Effizienz Technologie GmbH | Wärmetauscher |
| JP5941589B1 (ja) * | 2015-09-14 | 2016-06-29 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
| CN105658027B (zh) * | 2015-10-22 | 2018-04-13 | 浙江大学 | 用于电子部件冷却的液冷板 |
| US10266947B2 (en) | 2016-08-23 | 2019-04-23 | Lam Research Corporation | Rotary friction welded blank for PECVD heated showerhead |
| JP6911469B2 (ja) * | 2017-03-31 | 2021-07-28 | 株式会社Ihi | 熱処理装置 |
| CN108118296A (zh) * | 2017-12-08 | 2018-06-05 | 北京创昱科技有限公司 | 一种冷却板 |
| JP2022500991A (ja) * | 2018-09-19 | 2022-01-04 | ハイパーループ テクノロジーズ インコーポレーテッドHyperloop Technologies, Inc. | 単極線形同期機 |
| US20200126826A1 (en) * | 2018-10-18 | 2020-04-23 | Applied Materials, Inc. | Load lock body portions, load lock apparatus, and methods for manufacturing the same |
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| KR102646904B1 (ko) * | 2018-12-04 | 2024-03-12 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| JP6918042B2 (ja) | 2019-03-26 | 2021-08-11 | 日本碍子株式会社 | ウエハ載置装置 |
| DE102019216264A1 (de) * | 2019-10-23 | 2021-04-29 | Robert Bosch Gmbh | Herstellverfahren zum Herstellen einer Leitvorrichtung zum Leiten zumindest eines Fluides, sowie Produktionsverfahren zur Produktion einer Brennstoffzelleneinheit |
| FR3106769B1 (fr) * | 2020-02-05 | 2023-03-10 | Stiral | Procédé de fabrication d’un échangeur thermique ou d’un caloduc |
| KR102649715B1 (ko) * | 2020-10-30 | 2024-03-21 | 세메스 주식회사 | 표면 처리 장치 및 표면 처리 방법 |
| KR102866116B1 (ko) | 2021-11-26 | 2025-09-30 | 삼성전자주식회사 | 반도체 패키지 |
| CN114635136A (zh) * | 2022-03-17 | 2022-06-17 | 中国电子科技集团公司第十研究所 | 一种液冷冷板内流道表面质量控制方法 |
| CN114905182B (zh) * | 2022-06-28 | 2024-04-19 | 新乡市特美特热控技术股份有限公司 | 一种焊料的制备方法及通过焊料焊接冷板的方法 |
| EP4156251B1 (en) * | 2022-08-30 | 2024-07-03 | Ovh | Cooling block for cooling a heat-generating electronic component and method for manufacturing thereof |
| KR102763125B1 (ko) * | 2024-08-09 | 2025-02-07 | 케이세미 주식회사 | 열교환부 및 그를 갖는 기판 처리 장치 |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172977U (ja) * | 1986-04-15 | 1987-11-02 | ||
| JPH1140715A (ja) * | 1997-07-23 | 1999-02-12 | Mitsubishi Electric Corp | 半導体素子用冷却装置およびその製造方法 |
| JPH1174614A (ja) * | 1997-08-28 | 1999-03-16 | Sumitomo Electric Ind Ltd | 冷媒流路を含む熱消散体とその製造方法 |
| JP2002248584A (ja) * | 2000-12-22 | 2002-09-03 | Hitachi Ltd | 冷却板とその製造方法及びスパッタリングターゲットとその製造方法 |
| JP2002257490A (ja) * | 2001-03-02 | 2002-09-11 | Nippon Light Metal Co Ltd | ヒートプレートおよびその製造方法 |
| JP2006299294A (ja) * | 2005-04-15 | 2006-11-02 | Tokyo Electron Ltd | ガス供給装置及び成膜装置 |
| JP2006329439A (ja) * | 2005-05-23 | 2006-12-07 | Furukawa Sky Kk | コールドプレート |
| JP2008231486A (ja) * | 2007-03-19 | 2008-10-02 | Ihi Corp | 合金塗布方法、ロウ材塗布方法、熱交換器の製造方法 |
| JP2008274352A (ja) * | 2007-04-27 | 2008-11-13 | Ihi Corp | 封止補完方法、金属部材補修方法、金属欠陥補修装置 |
| JP2009291793A (ja) * | 2008-06-02 | 2009-12-17 | Kuroki Kogyosho:Kk | 構造体の製造法 |
| JP2010123712A (ja) * | 2008-11-19 | 2010-06-03 | Nihon Ceratec Co Ltd | 静電チャックおよびその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5579534A (en) * | 1994-05-23 | 1996-11-26 | Kabushiki Kaisha Toshiba | Heat-resistant member |
| US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
| JP4844167B2 (ja) | 2006-02-24 | 2011-12-28 | 東京エレクトロン株式会社 | 冷却ブロック及びプラズマ処理装置 |
| US7900458B2 (en) | 2007-05-29 | 2011-03-08 | Siemens Energy, Inc. | Turbine airfoils with near surface cooling passages and method of making same |
| JP4586823B2 (ja) * | 2007-06-21 | 2010-11-24 | トヨタ自動車株式会社 | 成膜方法、伝熱部材、パワーモジュール、車両用インバータ、及び車両 |
-
2010
- 2010-07-09 JP JP2010157235A patent/JP5463224B2/ja active Active
-
2011
- 2011-07-06 EP EP11803639.1A patent/EP2592647B1/en active Active
- 2011-07-06 CN CN201180030775.8A patent/CN102959696B/zh active Active
- 2011-07-06 WO PCT/JP2011/065507 patent/WO2012005305A1/ja not_active Ceased
- 2011-07-06 US US13/808,783 patent/US10279441B2/en active Active
- 2011-07-06 KR KR1020137000378A patent/KR101409953B1/ko active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172977U (ja) * | 1986-04-15 | 1987-11-02 | ||
| JPH1140715A (ja) * | 1997-07-23 | 1999-02-12 | Mitsubishi Electric Corp | 半導体素子用冷却装置およびその製造方法 |
| JPH1174614A (ja) * | 1997-08-28 | 1999-03-16 | Sumitomo Electric Ind Ltd | 冷媒流路を含む熱消散体とその製造方法 |
| JP2002248584A (ja) * | 2000-12-22 | 2002-09-03 | Hitachi Ltd | 冷却板とその製造方法及びスパッタリングターゲットとその製造方法 |
| JP2002257490A (ja) * | 2001-03-02 | 2002-09-11 | Nippon Light Metal Co Ltd | ヒートプレートおよびその製造方法 |
| JP2006299294A (ja) * | 2005-04-15 | 2006-11-02 | Tokyo Electron Ltd | ガス供給装置及び成膜装置 |
| JP2006329439A (ja) * | 2005-05-23 | 2006-12-07 | Furukawa Sky Kk | コールドプレート |
| JP2008231486A (ja) * | 2007-03-19 | 2008-10-02 | Ihi Corp | 合金塗布方法、ロウ材塗布方法、熱交換器の製造方法 |
| JP2008274352A (ja) * | 2007-04-27 | 2008-11-13 | Ihi Corp | 封止補完方法、金属部材補修方法、金属欠陥補修装置 |
| JP2009291793A (ja) * | 2008-06-02 | 2009-12-17 | Kuroki Kogyosho:Kk | 構造体の製造法 |
| JP2010123712A (ja) * | 2008-11-19 | 2010-06-03 | Nihon Ceratec Co Ltd | 静電チャックおよびその製造方法 |
Non-Patent Citations (2)
| Title |
|---|
| CSNC200801484007; 榊 和彦 Kazuhiko SAKAKI: '解説' JOURNAL OF JAPAN INSTITUTE OF LIGHT METALS 第56巻, 社団法人軽金属学会 * |
| JPN6014000623; 榊 和彦 Kazuhiko SAKAKI: '解説' JOURNAL OF JAPAN INSTITUTE OF LIGHT METALS 第56巻, 社団法人軽金属学会 * |
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|---|---|---|---|---|
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| JP2013169038A (ja) * | 2012-02-14 | 2013-08-29 | Fanuc Ltd | 補強構造が形成されたかご形導体を備える回転子及びその製造方法 |
| US8803399B2 (en) | 2012-02-14 | 2014-08-12 | Fanuc Corporation | Rotor with reinforced squirrel-cage conductive body and manufacturing method thereof |
| JP2018201027A (ja) * | 2012-07-18 | 2018-12-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | マルチゾーン温度制御および多パージ機能を有するペデスタル |
| US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
| KR20200057115A (ko) * | 2012-07-18 | 2020-05-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중-구역 온도 제어 및 다중 퍼지 성능을 갖는 페데스탈 |
| KR102236935B1 (ko) * | 2012-07-18 | 2021-04-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중-구역 온도 제어 및 다중 퍼지 성능을 갖는 페데스탈 |
| KR102114492B1 (ko) | 2012-07-18 | 2020-05-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중-구역 온도 제어 및 다중 퍼지 성능을 갖는 페데스탈 |
| JP2015529969A (ja) * | 2012-07-18 | 2015-10-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | マルチゾーン温度制御および多パージ機能を有するペデスタル |
| KR20150038154A (ko) * | 2012-07-18 | 2015-04-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중-구역 온도 제어 및 다중 퍼지 성능을 갖는 페데스탈 |
| US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
| US10354843B2 (en) | 2012-09-21 | 2019-07-16 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US11264213B2 (en) | 2012-09-21 | 2022-03-01 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US11024486B2 (en) | 2013-02-08 | 2021-06-01 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| JP2014192372A (ja) * | 2013-03-27 | 2014-10-06 | Tokyo Electron Ltd | マイクロ波加熱処理装置 |
| JP2019083331A (ja) * | 2013-05-07 | 2019-05-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
| KR20190010731A (ko) * | 2013-05-07 | 2019-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
| KR102305541B1 (ko) * | 2013-05-07 | 2021-09-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
| US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
| US9837249B2 (en) | 2014-03-20 | 2017-12-05 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
| US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
| US9885117B2 (en) | 2014-03-31 | 2018-02-06 | Applied Materials, Inc. | Conditioned semiconductor system parts |
| US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
| US9773695B2 (en) | 2014-07-31 | 2017-09-26 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
| US9837284B2 (en) | 2014-09-25 | 2017-12-05 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
| US10707061B2 (en) | 2014-10-14 | 2020-07-07 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US10490418B2 (en) | 2014-10-14 | 2019-11-26 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US10796922B2 (en) | 2014-10-14 | 2020-10-06 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US12009228B2 (en) | 2015-02-03 | 2024-06-11 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
| US10607867B2 (en) | 2015-08-06 | 2020-03-31 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US11158527B2 (en) | 2015-08-06 | 2021-10-26 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10147620B2 (en) | 2015-08-06 | 2018-12-04 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US10424464B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US11476093B2 (en) | 2015-08-27 | 2022-10-18 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| JP2019515506A (ja) * | 2016-05-06 | 2019-06-06 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 全エリア逆流熱交換の基板支持体 |
| US10648080B2 (en) | 2016-05-06 | 2020-05-12 | Applied Materials, Inc. | Full-area counter-flow heat exchange substrate support |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US11735441B2 (en) | 2016-05-19 | 2023-08-22 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US12057329B2 (en) | 2016-06-29 | 2024-08-06 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10541113B2 (en) | 2016-10-04 | 2020-01-21 | Applied Materials, Inc. | Chamber with flow-through source |
| US10224180B2 (en) | 2016-10-04 | 2019-03-05 | Applied Materials, Inc. | Chamber with flow-through source |
| US11049698B2 (en) | 2016-10-04 | 2021-06-29 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
| US10319603B2 (en) | 2016-10-07 | 2019-06-11 | Applied Materials, Inc. | Selective SiN lateral recess |
| US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
| US10770346B2 (en) | 2016-11-11 | 2020-09-08 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
| US10186428B2 (en) | 2016-11-11 | 2019-01-22 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
| US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
| US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| KR101876548B1 (ko) * | 2016-12-30 | 2018-07-09 | 상구정공(주) | 샤워헤드 플레이트 및 이의 제작방법 |
| US10903052B2 (en) | 2017-02-03 | 2021-01-26 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
| US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| US10325923B2 (en) | 2017-02-08 | 2019-06-18 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10529737B2 (en) | 2017-02-08 | 2020-01-07 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
| US12340979B2 (en) | 2017-05-17 | 2025-06-24 | Applied Materials, Inc. | Semiconductor processing chamber for improved precursor flow |
| US11361939B2 (en) | 2017-05-17 | 2022-06-14 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
| US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
| US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
| US10593553B2 (en) | 2017-08-04 | 2020-03-17 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
| US11101136B2 (en) | 2017-08-07 | 2021-08-24 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
| US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
| US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US12148597B2 (en) | 2017-12-19 | 2024-11-19 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10861676B2 (en) | 2018-01-08 | 2020-12-08 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10699921B2 (en) | 2018-02-15 | 2020-06-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US11004689B2 (en) | 2018-03-12 | 2021-05-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| JP7119779B2 (ja) | 2018-08-30 | 2022-08-17 | 住友金属鉱山株式会社 | 成膜装置と成膜方法 |
| JP2020033614A (ja) * | 2018-08-30 | 2020-03-05 | 住友金属鉱山株式会社 | 成膜装置と成膜方法 |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| CN111293057A (zh) * | 2018-12-07 | 2020-06-16 | 应用材料公司 | 部件、制造部件的方法、以及清洁部件的方法 |
| JP7497354B2 (ja) | 2018-12-07 | 2024-06-10 | アプライド マテリアルズ インコーポレイテッド | 部品、部品を製造する方法、及び部品を洗浄する方法 |
| JP2022511046A (ja) * | 2018-12-07 | 2022-01-28 | アプライド マテリアルズ インコーポレイテッド | 部品、部品を製造する方法、及び部品を洗浄する方法 |
| KR102779066B1 (ko) * | 2018-12-07 | 2025-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 컴포넌트, 컴포넌트를 제조하는 방법, 및 컴포넌트를 세정하는 방법 |
| KR20210090279A (ko) * | 2018-12-07 | 2021-07-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 컴포넌트, 컴포넌트를 제조하는 방법, 및 컴포넌트를 세정하는 방법 |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| KR102199738B1 (ko) * | 2020-04-24 | 2021-01-08 | (주)코리아스타텍 | 건식 식각장비용 직냉식 정전척 |
| WO2025047725A1 (ja) * | 2023-08-30 | 2025-03-06 | 京セラ株式会社 | 試料保持具 |
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| JP5463224B2 (ja) | 2014-04-09 |
| US20130112383A1 (en) | 2013-05-09 |
| KR101409953B1 (ko) | 2014-06-19 |
| EP2592647A4 (en) | 2017-08-16 |
| CN102959696B (zh) | 2015-09-02 |
| US10279441B2 (en) | 2019-05-07 |
| EP2592647B1 (en) | 2021-10-06 |
| KR20130044291A (ko) | 2013-05-02 |
| EP2592647A1 (en) | 2013-05-15 |
| CN102959696A (zh) | 2013-03-06 |
| WO2012005305A1 (ja) | 2012-01-12 |
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