JP2012093328A - Probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe card that helps solve the problems of defective contact or fracture of contact points due to relative positional deviation accompanying a temperature change, ensures satisfactory checkup of electrical characteristics of all semiconductor chips even in a broad temperature range, and moreover reduces the cost.SOLUTION: A low-cost substrate is realized by collectively fixing a reinforcing board, a metal base and a probe assembling and fixing board, all using a material whose thermal expansion coefficient is close to that of silicon wafers, connecting a probe and a wiring board to each other by only a spring force in the perpendicular direction, and using a configuration having a plurality of values of relative positions of the tips of adjacent probe connecting terminals in the lengthwise direction (X direction) and the perpendicular direction (Z direction) of the probe; furthermore, one or more probes are structured to be detachable.

Description

  The present invention relates to a probe card for a prober apparatus used for circuit inspection of a plurality of semiconductor chips formed on a semiconductor wafer in a manufacturing process of an electronic device such as an LSI. In particular, the present invention relates to a probe card used for a probing test in which a probe is brought into contact with a circuit terminal (pad) arranged on a semiconductor chip in a wafer state and the electrical continuity of the semiconductor chip is collectively measured.

  With the advancement of semiconductor technology, the degree of integration of electronic devices has improved, and the number of electrode terminals (pads) on each semiconductor chip has increased, and along with that, the pad area has been reduced by reducing the pad area and the pad pitch. Miniaturization is progressing.

  In addition, the silicon wafer diameter has been increased for the purpose of further reducing the cost of semiconductors, and the diameter is being changed from 300 mm to 450 mm. Furthermore, in order to ensure the quality of LSI products in the wafer state, a wide range of inspection environment temperatures (for example, −50 ° C. to 150 ° C. at the maximum) is required.

  On the other hand, in probe cards that are used for inspection of semiconductor circuits by electrically connecting pads on the semiconductor circuit with probe needles, there is an increasing demand for high-density probe arrays and batch inspection of large wafers to support semiconductor technology. Yes.

  In general, a probe card has a probe arranged on one surface and a connection terminal electrically connected to each probe on the other surface as disclosed in, for example, JP-A-2007-3334. The ceramic substrate is divided into a plurality of substrate parts, and a probe substrate of a desired size is obtained by holding the plurality of ceramic substrate parts integrally like a single plate using a frame. It has a configuration.

  However, since the probe card having the structure disclosed in Japanese Patent Application Laid-Open No. 2007-3334 uses a multilayer ceramic substrate, it is caused by thermal contraction accompanying a temperature change when applied to a larger diameter silicon wafer. There arises a problem that the influence of disconnection or misalignment with the non-inspection electrode pad becomes significant. Further, in order to cope with the increase in the number of wirings due to the increase in the diameter of the silicon wafer, further multilayering is necessary, resulting in a problem that the cost of the substrate is increased. Furthermore, even if it is divided into multiple substrates, since many probes are fixed to the ceramic substrate, if there is a need for replacement due to improper fixing during assembly or probe breakage during inspection, etc. It is necessary to replace all the probes including the non-defective products mounted on the substrate, which causes a problem of increasing the cost.

  JP 2007-3334 A

  The present invention has been made to solve the above problems, and in a probe card for simultaneously inspecting all semiconductor chips on a wafer, it can follow the displacement of an electrode pad on a silicon wafer due to a wide range of temperature changes. Providing a low-cost probe card with a reliable probe assembly structure and a structure in which one or a plurality of probes can be replaced even after assembly, thereby ensuring electrical characteristic inspection of all semiconductor chips. It is.

  In order to solve the problem, the present invention provides an external connection board having a connection portion with a tester and a wiring path from the connection portion at an outer edge, an intermediate wiring board for connecting the external connection board and the probe, and the external connection board. A metal base having substantially the same diameter as the connection substrate, and a probe assembly in which a plurality of the probes are regularly arranged and integrated at positions facing one or more semiconductor chip electrodes to be inspected; A probe assembly fixing plate for arranging and fixing one set or two or more sets of the probe assemblies at positions facing a part or all of the semiconductor chip electrodes to be inspected on the semiconductor wafer, and the reinforcing plate and the metal base A base and the probe assembly fixing plate are integrally fixed, the external connection board is fixed between the reinforcing plate and the metal base, and the intermediate wiring board is fixed to the metal base and the probe assembly. Between the board A basic structure that was boss, a probe assembly structure capable of following the displacement of the electrode pads by a wide range of temperature changes.

  Since the thermal expansion coefficient of at least the reinforcing plate, the metal base, and the probe assembly fixing plate is made of a material that is close to the thermal expansion coefficient of the semiconductor wafer, the displacement of the electrode pad due to a wide range of temperature changes It is possible to follow.

  The probe assembly is attached to one or two or more support rods in a notch obtained by processing a plurality of the probes on the surface of the probe, and the support rods are attached to one or more fixing side plates. Since the structure is held and fixed, the probe can be attached and detached in units of one unit.

  The probe assembly fixing plate has a plurality of lattice-shaped openings, and one or more of the openings and a part of the fixing side plate of the probe assembly are fitted or mechanically combined. Accordingly, since the probe assembly is fixed to the probe assembly fixing plate, it is possible to attach and detach the probe assembly unit.

  The intermediate wiring board is sandwiched between the metal base and the probe assembly fixing plate, and is fixed at a plurality of positions at substantially equal intervals with the metal base and the probe assembly fixing plate. Therefore, by forcibly fixing intermediate wiring boards with different thermal expansion coefficients at several locations, the relative displacement from the probe is reduced, and the probe can follow the displacement of the electrode pad due to a wide range of temperature changes. Allows assembly structure.

  The intermediate wiring board has a plurality of pad portions that are in contact with the probe output terminals on the surface of one or more non-conductive films, and a wiring pattern portion that extends from the pad portions toward the external connection substrate. A wiring including a plurality of circumferential wiring patterns connected to the first wiring board and connected to the external connection board on the surface of the first wiring board and one or more non-conductive films Since the second wiring board having the pattern is used, inexpensive wiring is possible.

  The probe output terminal generates a spring force in the vertical direction (Z direction), contacts with the connection pad of the intermediate wiring board by the repulsive force of the spring, and is not restricted in the plane direction (XY direction). Therefore, even if a relative positional shift occurs between the probe and the connection pad of the intermediate wiring board due to a wide range of temperature changes, an effect that it is difficult to disconnect is generated.

  Since the probe is composed of a thin plate probe formed by etching, it can be arranged at a narrow pitch, and it is possible to cope with an increase in the number of pins.

  There are a plurality of different types of probes formed so that the relative positions of the adjacent probe output terminals in the probe longitudinal direction (X direction) have a rough pitch of approximately 0.5 mm or more, or the probes Since there are a plurality of different types of probes formed so that the vertical direction (Z direction) position of the tip of the output terminal matches the Z direction position of the pad portion in each layer of the intermediate wiring board, Wiring near the probe output terminal is facilitated, and an inexpensive substrate can be manufactured.

  A semiconductor device to be inspected is a slit or notch having a width slightly larger than the cross-sectional shape in the vicinity of the contact portion with the electrode pad of the probe and substantially the same as or smaller than the pad width in the adjacent pad direction (Y direction). A plurality of probe arrangement guide sheets which are arranged at positions corresponding to some or all of the pads of the chip and determine the probe tip position by inserting the probe tip into the slit, the probe arrangement guide sheet; Since the thermal expansion coefficient is made of a material that is similar to the thermal expansion coefficient of the semiconductor wafer, it can follow the displacement of the electrode pad due to a wide range of temperature changes, and the number of contacts increases. Probe assembly with little displacement of the probe tip is possible.

  The probe has a notch for inserting the support rod, and an opening width (Z-direction width) of the notch is slightly larger than a Z-direction height of the support rod into which the notch is fitted, and the notch Since the support rod can be inserted from one direction along the XY plane from the open end side of each, the individual probes can be attached and detached even after assembly.

  According to the probe card of the present invention, in the probe card for inspecting all the semiconductor chips on the large wafer at the same time, the probe tip position is configured to follow the thermal contraction of the silicon wafer, so that the relative position according to the temperature change A structure that solves problems such as contact failure due to misalignment and breakage of connection points, ensures electrical characteristic inspection of all semiconductor chips even in a wide temperature range, and allows one or more probes to be replaced even after assembly As a result, an effect of providing an inexpensive probe card is produced.

It is a perspective view which shows the 1st Embodiment of this invention. It is the elements on larger scale of FIG. It is sectional drawing of the whole probe card which shows embodiment of this invention. It is a front view of the probe card which shows embodiment of this invention. It is the elements on larger scale of FIG. It is a fragmentary sectional view of the outer peripheral part of FIG. FIG. 4 is a partial cross-sectional detail view of the outer periphery of FIG. 3. FIG. 8 is a partial detail view of FIG. 7. It is a perspective view which shows the 2nd Embodiment of this invention. FIG. 10 is a partial cross-sectional detail view of an outer peripheral portion according to FIG. 9. It is a fragmentary figure which shows the 2nd Embodiment of this invention. FIG. 11 is a partial detail view according to FIG. 10. It is a whole operation explanatory view concerning an embodiment of the invention. It is a partial operation explanatory view concerning an embodiment of the invention. It is a partial operation explanatory view concerning an embodiment of the invention. It is a partial operation explanatory view concerning an embodiment of the invention.

  Embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a diagram showing a first embodiment of the present invention, a perspective view showing a schematic structure of a probe card, FIG. 2 is a partially enlarged view of FIG. 1 showing a probe mounting state in detail, and FIG. 3 is a probe FIG. 4 is an overall view of the probe card as viewed from the wafer side. In addition, some or all of the axes of X, Y, and Z are described in each figure after FIG. 1 (most, if not all, figures). This is XYZ three-dimensional orthogonal in each figure. Represents an axis in the coordinate system.

(overall structure)
1 to 4, reference numeral 100 denotes a probe card showing an embodiment of the present invention. The probe card is installed on a prober (not shown) holder 101 and inspected by contacting an electrode pad 103 on a wafer 102 to be inspected. To be implemented. 104 is a group of pogo pins for transmitting and receiving tester signals, 6 is an external connection board having a connection part 61 (for example, a land) to the pogo pin 104 and a wiring path (including a through hole) from the connection part 61 on the outer edge part, It is a metal base having substantially the same diameter as the external connection board 6, and an opening 51 is provided at a position corresponding to the connection part 61, and is fixed to the external connection board 6. Reference numeral 4 denotes an intermediate wiring board for connecting the external connection board 6 and the plurality of probes 1. Reference numeral 3 denotes a probe assembly fixing plate having a plurality of lattice-shaped openings 31 for arranging and fixing a probe assembly to be described later.

  2, as shown in detail in FIGS. 2 (a) and 2 (b), a plurality of probes 1 are regularly arranged and integrated at positions facing one or more semiconductor chip electrodes to be inspected. One or two or more sets of the probe assemblies 2 are arranged and fixed on the probe assembly fixing plate 3 at positions facing part or all of the semiconductor chip electrodes to be inspected on the semiconductor wafer. Is done.

  A probe tip guide plate 8 for determining the tip position of the probe 1 is provided with a slit 81 into which the tip of the probe 1 is inserted, and is fixed to an appropriate height via a ring 52. On the other hand, a reinforcing plate 7 for maintaining the strength of the entire probe card is installed on the opposite side of the external connection board.

(Probe assembly)
FIG. 2 is an explanatory view showing the configuration of the probe assembly 2. 2 (a) and 2 (b), 21 indicates a support rod, and 22 indicates a fixing side plate. A plurality of the probes 1 are sequentially inserted into the support rod 21, and fixed and arranged regularly at positions facing the electrode pads of the semiconductor chip to be inspected, and fixed to the plurality of fixing side plates 22. A solid 2 is formed. Thereby, it is possible to obtain a probe assembly 2 that is regularly arranged and integrated at a position facing one or more chip electrode groups of semiconductors to be inspected. The figure shows an example in which two support bars on which five probes are installed are attached to the fixing side plate 22 as a component of one probe assembly, but the number of probes or the number of support bars is limited to this. It is not something.

(Probe assembly fixing plate)
As shown in FIGS. 1 and 2 (b), a plurality of the probe assemblies 2 are placed in a lattice-shaped opening 31 of the probe assembly fixing plate 3 or a part or all of the semiconductor chip electrodes to be inspected on the semiconductor wafer. By arranging and fixing so as to be in a position opposite to 103, all the probes can be installed at predetermined positions. The probe assembly 2 and the probe assembly fixing plate 3 can be fixed by screwing or mechanical fitting.

  FIG. 5 is a partially enlarged view showing in detail an example of the probe mounting state in FIG. In FIG. 5, reference numeral 20 denotes a set of the probe assemblies. In the illustrated example, a probe assembly for inspecting 6 × 4 chips to be inspected 105 (the hatched portion corresponds to one LSI chip) is configured. The number of the probes 1 mounted on the probe assembly 2 can be arbitrarily selected according to the size of the target LSI, the electrode pad arrangement, and the like.

  FIG. 6 is a partial cross-sectional view of the outer peripheral portion of the probe card corresponding to the portion A in FIG. 3, and illustrates the structure of the probe and the connection structure from the probe to the tester. FIG. 7 is a partial sectional view showing the relationship with the probe 1 in detail.

(Probe structure)
The structure and connection relationship of the probe 1 will be described with reference to FIG. Using the resin film 12 to which the metal foil 11 is adhered, the metal foil 11 is etched to form a conductive pattern 17 made of a conductor including a parallel spring portion 13A serving as a probe function on the resin film. Similarly, the conductor protruding from the opposite side of the spring portion 13A is a parallel spring portion 13B, and an output terminal 18 to the intermediate wiring board 4 is provided.

  The parallel spring portion 13A as a probe function to contact the electrode pad 103 forms a parallelogram spring by the vertical probe 14, the two parallel beams 15a and 15b, and the fixing portion 16, and the electrode pad 103 is the tip of the vertical probe 14. When contact with the portion 14A is started and the pressing force is further increased, the vertical probe 14 generates a spring force in the vertical direction (Z direction), and electrical conduction with the electrode pad 103 is performed during this time.

  Similarly, the output terminal 18 constitutes a parallel spring portion 13B composed of parallel beams 15c and 15d. When fixing to the intermediate wiring board 4, a spring force is generated in the vertical direction (Z direction), and contact with the pad 42 of the intermediate wiring board 4 by the repulsive force of the spring makes electrical contact with the wiring board. Conduction is performed. The spring load of the output terminal 18 to the pad 42 of the intermediate wiring board is always applied after the probe assembly 2 is fixed to the probe assembly fixing plate 3.

(Probe mounting structure 1)
In FIG. 15, a method of attaching the probe 1 to the support bar 21 will be described. As shown in FIG. 15A, stoppers 191 </ b> A and 191 </ b> B are provided on the upper and lower copper foil portions 17 </ b> A and 17 </ b> B of the notch 19 provided in the probe 1 so as to extend to the opening side of the notch 19. The stoppers 191A and 191B have rotational movements Ma and Mb by spring force in a minute range in the plane YZ direction with the copper foil portions 17A and 17B as fulcrums, respectively.

(Groove of support bar)
Further, as shown in FIG. 15 (a), a groove 24 is provided in advance so that the probe 1 can be installed at a predetermined position on one side surface 21a of the support bar 21 in contact with the probe 1. It is possible to place a probe. In the example shown in the figure, the groove is provided only on one side surface 21a, but the groove may be provided on the other side surface 12b or 12c in contact with the probe 1.

(Probe attachment / detachment)
The attachment / detachment operation between the probe 1 and the support bar 21 will be described with reference to FIG. In FIG. 15A, the opening width W1 of the notch 19 is set to be slightly larger than the height Wr in the Z direction of the support bar 21, and the distance Ws between the tip portions 192A and 192B of the stopper is set to be slightly smaller than Wr. Has been.

  When the probe 1 is inserted into the support bar 21, the stoppers 191A and 191B are pushed up and down. As shown in FIG. 15B, when the insertion of the support bar 21 is completed, the stoppers 191A and 191B Returning to the original relative distance Ws by the repulsion of the spring force, the support bar 21 is locked. Further, when an accident due to damage or the like occurs in the probe 1 once inserted and assembled, the probe 1 can be attached and detached by pushing the stoppers 191A and 191B up and down again using a jig or the like.

  With this structure, the probe 1 can be attached and detached only by the operation in the plane direction (XZ plane direction). Therefore, as shown in FIG. 15C, only one probe can be attached and detached after assembly. Is possible.

(Probe mounting structure 2)
In FIG. 16, another embodiment in which the probe is attached to the support rod will be described. As shown in FIG. 16A, the probe 10D is provided with a notch 19a having an opening width W1 and a notch 19b having an opening width W2 smaller than the opening width 19a, and copper foil portions above and below the notches 19a and 19b. 17A and 17B are provided with stoppers 191A and 191B extending to the opening side of the notch 19a. The stoppers 191A and 191B have rotational movements Ma and Mb by spring force in a minute range in the plane YZ direction with the copper foil portions 17A and 17B as fulcrums, respectively.

  Further, as shown in FIG. 16A, the support bar 211 has outer shapes having Wra and Wrb heights in the Z direction so as to be in contact with the notches 19a and 19b of the probe 10D. The grooves 242 are provided in advance on the side surfaces 211a and 211c (not shown) whose height in the Z direction is Wra, and the grooves 241 are provided in the side surfaces 211b and 211d (not shown) whose height in the Z direction is Wrb. Similarly to the example, the probe 10D is inserted into a predetermined groove, and when the insertion is completed as shown in FIG. 16B, the stoppers 191A and 191B return to the original relative distance Ws due to the repulsion of the spring force, The support bar 211 is locked.

(Groove of support bar)
FIG. 16C shows the details of the grooves 241 and 242. The groove 241 is a groove used for a probe array having a very narrow adjacent pitch Pf (approximately Pf = 25 μm or less), and the groove 242 is a probe array having a relatively large adjacent pitch Pw (approximately Pw = 200 μm or more). This is the groove to be used. The groove 242 having a large pitch can be formed on the metal material of the support rod 211 by means such as direct etching or laser cutting, but the groove 241 having a narrow pitch is formed by fine etching by applying stress to glass (for example, JP, 2009-190908, A) etc., and it can produce by pasting the glass material which carried out fine processing beforehand on the side surfaces 211b and 211d of the above-mentioned support rod.

(Probe attachment-3 modes)
An embodiment relating to the mounting of the probe using the above-described support bar 211 will be described in detail with reference to FIGS. 16 (e) to 16 (g). In the figure, the height of the support bar 211 in the Z direction is Wra, Wrb, and the distance between the effective bottom surfaces (surfaces through which the probe can pass, the same applies hereinafter) of the grooves 242 of the side surfaces 211a and 211c is Wr1, the side surfaces 211b and The distance between effective bottom surfaces of the groove 241 of 211d is Wr2, the distance between the stopper tips of the probe 10D is Ws, the opening width of the notch 19a is W1, and the opening width of the notch 19b is W2. The distance Ws between the tips of the stoppers is set slightly smaller than the effective distance Wr1 between the bottom surfaces of the grooves 242, and is common to all the embodiments.

  FIG. 16E is a diagram showing a dimensional relationship in the case of only a probe array having a relatively large adjacent pitch. In this embodiment, Wra> W1> Wr1 and W2> Wrb, and by using only the groove 242, a support rod dedicated to the probe array with a relatively large pitch is obtained.

  FIG. 16F is a diagram showing a dimensional relationship in the case of only a probe array with a narrow adjacent pitch. In this embodiment, W1> Wra and Wrb> W2> Wr2, and by using only the groove 241, a support rod dedicated to the probe arrangement with a very narrow pitch as shown in FIG. .

  FIG. 16G is a diagram showing a dimensional relationship when the groove 241 and the groove 242 are used. In this embodiment, Wra> W1> Wr1 and Wrb> W2> Wr2, and both the grooves 241 and 242 are used. Thereby, it can be used for a probe arrangement in which a narrow pitch and a coarse pitch are mixed. Further, even in the case of only a probe arrangement with a narrow adjacent pitch, the pin arrangement number can be easily confirmed by passing the groove 242 for every certain period or signal function unit, thereby preventing erroneous arrangement during or after assembly. The effect of being connected to occurs.

  Further, in this embodiment, since the probe 10D can be attached and detached only by the operation in the plane direction (XZ plane direction), as shown in FIG. 16D, the adjacent probes are arranged at a narrow pitch. Even so, it is possible to replace only one probe.

  The support rod 211 of the embodiment described above can be used for a narrow pitch probe array (for example, a liquid crystal driver LSI) and a probe array (for example, a logic LSI) in which a narrow pitch and a coarse pitch are mixed. .

(Probe; no resin film)
The probe in this example uses a resin film to which a metal foil is bonded and illustrates a manufacturing method in which the metal foil is etched. However, the probe can be applied to a probe having only a metal foil without using a resin film.

(Connection configuration)
A connection structure from the probe 1 to the pogo pin 104 serving as a tester signal interface will be described with reference to FIGS.

(Intermediate wiring board; basic configuration)
7 and 8, the basic configuration of the intermediate wiring board 4 will be described in detail. As shown in FIG. 8A, the intermediate wiring board 4 is based on a double-sided two-layer flexible board in which a copper foil is bonded to both sides of a non-conductive film 41A such as polyimide.

  7 and 8B, a plurality of pads 42-1 to 42-3 that are in contact with the tip of the probe output terminal 18 on one copper foil surface 41B1, and the pogo pins from the pads 42-1 to 42-3. 104 extending in the direction of the outer edge where the connecting portion 61 is connected to the wiring pattern 43-1 to 43-3 connected to the through hole 64 of the corresponding external connection board, and the copper foil surface 41B2 on the opposite side The through hole group 44 is formed by etching. On the copper foil surface 41B2, a solid pattern of the copper foil can be etched as necessary, and impedance matching can be ensured by the dimensional relationship with the wiring patterns 43-1 to 43-3. As an example, the thickness of the substrate is generally 35 μm as the thickness of the copper foil and 25 μm as the thickness of the polyimide which is a non-conductive film. By producing the intermediate wiring board 4 in which the wiring pattern having the above configuration is wired to all the probes, and connecting the corresponding through hole 64 of the external connection board by soldering or press-fitting a connection pin or the like, Electrical connection between the probe 1 and the pogo pin 104 becomes possible.

(Intermediate wiring board; multi-pin wiring)
FIG. 9 is a partial perspective view showing a second embodiment of the present invention. In the whole wafer batch type probe card, it is predicted that the number of pins will increase from 10,000 to tens of thousands in the future. When the number of pins is increased, it is natural that a plurality of intermediate wiring boards are required in multiple layers. A configuration example in that case is shown in FIGS.

  In FIG. 9, reference numerals 45A, 45B, and 45C denote outer edge direction wiring boards, which are boards having the basic configuration described above. 46 is a circumferential wiring board, a plurality of wiring patterns in the circumferential direction, a wiring pattern extending from the wiring pattern to the position of a through hole for connection to the external connection board 6, and each of the outer edge wiring boards And a through hole for connection to 45. The outer edge direction wiring boards 45A, 45B, 45C and the circumferential direction wiring board 46 are overlapped with each other via an insulating film (not shown), and the corresponding through holes of the circumferential direction wiring board 46 are respectively provided. Electrical connection is made by soldering or press-fitting a connection pin or the like. After the electrical connection is made, the probe assembly fixing plate 3 and the metal base 5 are sandwiched and fixed and integrated by means such as screws.

(Detailed connection from probe to external connection board)
A connection structure from the probe 1 to the pogo pin 104 serving as an interface for a tester signal will be described with reference to FIGS. FIG. 10 is a detailed cross-sectional view illustrating the connection structure from the probe to the pogo pin, FIG. 11 is a diagram showing the dimensional relationship of the tip coordinates of the output terminal 18 of the probe 1, and FIG. FIG. 4 is a partial detail view of the intermediate wiring board 4 when the substrates 45A, 45B, 45C for use and the circumferential wiring board 46 are overlapped with an insulating film 47, respectively.

(Probe step connection in X and Z directions)
10 to 12, a method for connecting the outer edge direction wiring boards 45A, 45B, and 45C to the corresponding probes will be described. The output terminals of the probes 10A, 10B, and 10C corresponding to the electrode pads 103A, 103B, and 103C are 18A, 18B, and 18C. When manufacturing each probe, the outer shape is designed in advance so that the output terminals 18A, 18B, and 18C have the dimensional relationship shown in FIG. Even probes having different external shapes can be manufactured at low cost by performing batch etching on the same metal foil.

ずらした位置に設置されている。Ｘ方向に先端位置をずらすことにより電極パッド１０３Ａ，１０３Ｂ、１０３Ｃが非常に狭ピッチ（例えば５０μｍ）で近接されていたとしても、プローブの出力端子１８Ａ、１８Ｂ、１８Ｃは安価な樹脂基板での最小スルーホールピッチ（例えば０．５ｍｍピッチ）で配置することが可能である。また、Ｚ方向に先端位置をずらすことにより対応する各基板にスルーホール接続することなく直接プローブの出力端子から外縁方向配線用基板４５に接続が可能となる。これにより、狭ピッチかつ多ピンのプローブから外部接続基板への配線が容易となる。10 to 12, the output terminal 18A is compared with the output terminal 18A.

It is installed at a shifted position. Even if the electrode pads 103A, 103B, and 103C are close to each other with a very narrow pitch (for example, 50 μm) by shifting the tip position in the X direction, the probe output terminals 18A, 18B, and 18C are the smallest in an inexpensive resin substrate. It is possible to arrange with a through hole pitch (for example, 0.5 mm pitch). Further, by shifting the tip position in the Z direction, it is possible to connect directly from the output terminal of the probe to the outer edge direction wiring substrate 45 without connecting through holes to the corresponding substrates. This facilitates wiring from a narrow pitch, multi-pin probe to the external connection board.

(Configuration of external connection board)
As shown in FIGS. 6, 7, and 10, the external connection board 6 includes a land group 63 in contact with the pogo pin 104 serving as an interface for a tester signal, and a land group 63 in the vicinity of the land group 63 opposite to the external connection board 6. It has a through hole 64 as a wiring path connected to the side. The intermediate connection board 4 and the external connection board 6 are electrically connected by soldering or press-fitting with a connection pin through a corresponding through hole.

  10 and 12, the connection from the probe to the external connection substrate will be described in detail. When the tip of the probe 10A comes into contact with the electrode pad 103A, the electrical conduction of the test signal is started. Since the tip of the output terminal 18A of the probe is connected to the pad 42A of the first outer edge direction wiring board 45A, an electric signal is directly below the circumferential direction wiring board 46 by the wiring pattern 43A from the pad 42A to the outer edge portion. Is connected to one circumferential wiring 461A of the circumferential wiring board 46 through the through hole 44A, and is further connected to the land 631A from the vicinity of the corresponding pogo pin land 631A of the external connection board 6. 641A is connected to the land 631A via a wiring pattern.

  In the probe 10B corresponding to the electrode pad 103B, the tip of the probe output terminal 18B is connected to the pad 421B of the second outer edge direction wiring board 45B. At this time, the opening 48A is provided in the first outer edge direction wiring board 45A, so that the tip of the output terminal 18B of the probe is directly connected to the pad 42B. The electrical signal is connected to one circumferential wiring 461B of the circumferential wiring board 46 from the pad 42B to the outer edge via the through hole 44B from directly below the circumferential wiring board 46 by the wiring pattern 43B. The external connection board 6 is connected to the land 631B via a wiring pattern from the vicinity of the corresponding pogo pin land 631B to the through hole 641B connected to the land 631B.

  Similarly, in the probe 10C corresponding to the electrode pad 103C, the tip of the probe output terminal 18C is connected to the pad 42C of the third outer edge direction wiring board 45C. At this time, the opening 48B is provided in the first and second outer edge direction wiring boards 45A and 45B, so that the tip of the output terminal 18C of the probe is directly connected to the pad 42C. The electrical signal is connected to one circumferential wiring 461C of the circumferential wiring board 46 from the pad 42C to the outer edge via the through hole 44C from directly below the circumferential wiring board 46 by the wiring pattern 43C. The external connection board 6 is connected to the land 631C via a wiring pattern from the vicinity of the corresponding pogo pin land 631C to the through hole 641C connected to the land 631C.

  With the structure and operation described above, it is possible to increase the outer edge direction wiring board 45 as the number of wirings increases, and to standardize the wiring pattern of the circumferential direction wiring board 45 and select through holes. As a result, wiring to the external connection board is possible, so even when changing the LSI model, a so-called multilayer board can be manufactured at a lower cost than when a new design and manufacture is made.

(Each part mounting relationship)
Hereinafter, the interrelation between the reinforcing plate 7, the metal base 5, the probe assembly fixing plate 3, the external connection substrate 6, and the intermediate connection substrate 4 will be described in detail.

(Relationship between opening and intermediate connection board)
As shown in FIGS. 6 and 7, the intermediate connection substrate 4 is fixed between the metal base 5 and the probe assembly fixing plate 3 having substantially the same diameter as the external connection substrate 6, The probe output terminal 18 can be connected to the pad portion 42 of the intermediate connection board 4 through the opening 31 provided in the probe assembly fixing plate 3. In addition, the external connection board 6 is fixed to the opposite surface of the metal base 5, and the external connection board 6, the intermediate wiring board 4, and the like are formed by an opening 51 installed in the peripheral part of the metal base 5. Is possible.

(Fixing method of reinforcing plate, metal base and intermediate connection board)
As shown in FIG. 6, the reinforcing plate 7, the metal base 5, the probe assembly fixing plate 3, and the intermediate wiring board 4 are fixed by a plurality of screws 72 and 73. By using a material (for example, Fe-36Ni alloy) in which the thermal expansion coefficient of the reinforcing plate 7, the metal base 5, and the probe assembly fixing plate 3 is similar to the thermal expansion coefficient of the semiconductor wafer, silicon is increased in accordance with the inspection temperature range. Since the metal base 5 and the probe assembly fixing plate 3 change substantially in accordance with the thermal contraction of the wafer, the probe fixed to the probe assembly fixing plate 3 follows that, and even in a wide range of temperature changes. The probe tip can always be in contact with the electrode pad.

  On the other hand, since the intermediate wiring board 4 is made of copper foil, polyimide, or the like, the intermediate wiring board 4 has a value larger than the thermal expansion coefficient of the silicon wafer, but the metal base 5 and the probe assembly fixing plate 3 In the XY plane, the displacement in the XY direction is constrained by means such as screwing on the XY surface, so that even in the occurrence of thermal contraction accompanying the temperature change, the intermediate wiring board 4 has a small range (for example, the target LSI 10 to 10). 20), the amount of displacement of the intermediate wiring board 4 can be reduced.

  Further, since the pad area on the intermediate wiring board 4 can be set large by dispersing the tip positions of the output terminals 18 described above, the output terminal 18 can be connected to the intermediate wiring board 4 even in the event of thermal contraction due to temperature change. It will not come off the pad portion 42. Further, the output terminal 18 of the probe 1 and the pad 42 of the intermediate connection substrate 4 are in contact with each other only by the spring force in the Z direction and are not restrained in the XY plane direction. No point breaks occur.

(Fixing method of metal base, reinforcing plate and external connection board)
The fixed relationship among the metal base 5, the reinforcing plate 7, and the external connection board 6 will be described with reference to FIG. The reinforcing plate 7 is fixed to the metal base 5 with screws 72 at several positions with the external connection board 6 in between. At this time, the external connection board 6 is fixed to the through hole 65 of the screw 72 via the spacer 71. The height of the spacer 71 in the Z direction is set slightly larger than the thickness of the external connection substrate 6. As a result, a gap is secured between the external connection substrate 6 and the metal base 5 and the reinforcing plate 7, so that only the Z direction is constrained by the fixing of the screw 72 and not in the XY direction.

  Further, the through hole 65 of the external connection board 6 is a hole 65a near the center of the board, and the inner diameter of the hole 65a is set slightly larger than the outer dimension of the spacer 71. In 65b, the inner diameter of the hole 65b is set larger than the inner diameter of the hole 65a near the center. As a result, the external connection substrate 6 having a large thermal expansion coefficient is displaced in the circumferential direction independently of the thermal contraction of the metal base 5 and the reinforcing plate 7 as the temperature changes. Further, by providing a gap between the metal base 5 and the reinforcing plate 7, even if the external connection substrate 6 is warped, the warp affects the metal base 5 and the reinforcing plate 7. Can be kept to a minimum. Therefore, there is an effect that the operation of the probe tip is stabilized.

(Relationship of overall heat shrinkage)
FIG. 13 is a schematic diagram for explaining the operation against thermal contraction of each part accompanying a temperature change in the probe card configured according to the embodiment of the present invention. With reference to FIG. 13, the overall thermal contraction operation relationship will be described.

  In FIG. 13, CTE 1 is a coefficient of thermal expansion [1 / K (° C.)] of the metal base 5, the reinforcing plate 7, and the probe assembly fixing plate 3, and is a material that approximates the coefficient of thermal expansion of the semiconductor wafer ( For example, Fe-36Ni alloy) is used. CTE2 is a thermal expansion coefficient of the semiconductor silicon wafer 102, and CTE3 is a thermal expansion coefficient of the external connection board 6 and the intermediate wiring board 4.

  The metal base 5, the reinforcing plate 7, and the probe assembly fixing plate 3 are made of a material approximate to the thermal expansion coefficient of the semiconductor wafer 102, and are each along the XY plane direction with screws 72 and 73. Therefore, with respect to the heat shrinkage of the semiconductor wafer 102 in the X and Y directions, the heat shrink operation is performed in the same phase as that of the semiconductor wafer 102.

  On the other hand, the probe assembly 2 in divided units fixed to the probe assembly fixing plate 3 performs displacement movement in accordance with the thermal contraction of the probe assembly fixing plate 3 in the divided units. Therefore, the displacement of the tip 14A of the probe 1 mounted on the probe assembly 2 follows the change in the displacement amount of the electrode pad 103 on the semiconductor wafer 102.

  Since the intermediate wiring board 4 is made of a resin such as copper foil and polyimide, the intermediate wiring board 4 has a value larger than the thermal expansion coefficient CTE2 of the silicon wafer. However, as shown in FIG. Since a thin film substrate is used as a basic unit, it is sandwiched between the metal base 5 and the probe assembly fixing plate 3 and is placed in a small range (for example, 10 to 20 target LSIs) by means such as screwing at a plurality of positions on the XY plane. By restricting the displacement in the X and Y directions, the amount of displacement of the pad 42 of the intermediate wiring board 4 in the small range can be sufficiently reduced even in the occurrence of thermal contraction due to temperature change, as will be described later. it can.

  As described above, the external connection board 6 having a large thermal expansion coefficient is not constrained in the X and Y directions in the vicinity of the periphery, so that the thermal contraction of the metal base 5 and the reinforcing plate 7 with a temperature change. Displaces in the circumferential direction independently. Further, by providing a gap between the metal base 5 and the reinforcing plate 7, even if the external connection substrate 6 is warped, the warp affects the metal base 5 and the reinforcing plate 7. Can be kept to a minimum.

(Operation of intermediate wiring board)
With reference to FIG. 14, the thermal contraction operation relationship of the intermediate wiring board will be described in detail. FIG. 14A is a cross-sectional view showing a relationship in a thermal equilibrium state (for example, room temperature). The intermediate wiring board 4 is sandwiched between the metal base 5 and the probe assembly fixing plate 3 and screwed with screws 73a, 73b, 73c on the XY plane. A position corresponding to the screw 73a is X0, a position corresponding to the screw 73b is X1, a position corresponding to the screw 73c is X2, a distance from X0 to X1 is L1, and a distance from X1 to X2 is L2.

ある。Ｘ０を基準位置とし、図１４（ａ）における前記金属基台５等のＸ１に相当する位置をＸ１′、Ｘ２に相当する位置をＸ２′とし、前記ウェハ１０２のＸ１に相当する位置をＸ１″、Ｘ２に相当する位置をＸ２″とする。前記金属基台５と前記補強板７と前記プローブ組立体固定板３及び前記プローブ組立体固定板３に搭載されたプローブ組立体２は前述したように一体となって伸縮する。Ｘ１′の位置は

化する。同様に、Ｘ１′とＸ２′との距離は、Ｌ２＋〔ＣＴＥ１×Ｌ

is there. X0 is a reference position, a position corresponding to X1 of the metal base 5 or the like in FIG. 14A is X1 ′, a position corresponding to X2 is X2 ′, and a position corresponding to X1 of the wafer 102 is X1 ″. , X2 ″ is a position corresponding to X2. The metal base 5, the reinforcing plate 7, the probe assembly fixing plate 3, and the probe assembly 2 mounted on the probe assembly fixing plate 3 extend and contract as a unit as described above. The position of X1 '

Turn into. Similarly, the distance between X1 ′ and X2 ′ is L2 + [CTE1 × L

に変化する。同様に、Ｘ１″とＸ２″との距離は、Ｌ２＋〔ＣＴＥ２

７とプローブ組立体固定板３の熱膨張係数ＣＴＥ１を、ウェハ１０２の熱膨張係数ＣＴＥ２と近似の材料を用いることにより、プローブ先端１４Ａが電極パッド１０３に追従させることが可能である。The operation of the wafer 102 is X1 ″, where X0 is the reference position.

To change. Similarly, the distance between X1 ″ and X2 ″ is L2 + [CTE2

7 and the probe assembly fixing plate 3 can be made to follow the electrode pad 103 by the probe tip 14A by using a material whose thermal expansion coefficient CTE1 is similar to the thermal expansion coefficient CTE2 of the wafer 102.

が、ネジ７３ａ、７３ｂ、７３ｃで拘束されているため、Ｘ方向に対しては前記金属基台５等と同じ距離だけ伸長することになり、各々の

（ｂ）に示すようにネジ７３ａと７３ｂ間、及びネジ７３ｂと７３ｃ間での弛みとなって現れてくる。On the other hand, the intermediate wiring board 4 has the original lengths L1 and L2 as shown in FIG.

However, since it is restrained by screws 73a, 73b, 73c, it will extend by the same distance as the metal base 5 in the X direction.

As shown in (b), it appears as slack between the screws 73a and 73b and between the screws 73b and 73c.

  However, by setting the distance between the screws to be constrained to be in a small range, the displacement amount of the pad 42 of the intermediate wiring board 4 in the small range can be sufficiently reduced even in the occurrence of thermal contraction due to temperature change. Further, as described above, since the tip positions of adjacent probe output terminals 18 are distributed in the X direction, for example, 0.5 mm or more, the area of the pad 42 can be set relatively large. Even if a displacement occurs in the pad 42 due to thermal contraction, the probe output terminal 18 does not come off the pad 42.

  According to the present invention described above, in the probe card for inspecting all the semiconductor chips on the large wafer at the same time, the probe tip position is configured to follow the thermal contraction of the silicon wafer. Solves the problem of poor contact, solves problems such as breakage at the connection point between the probe and the wiring board, ensures electrical characteristic inspection of all semiconductor chips even in a wide temperature range, and even after assembly An inexpensive probe card is provided by adopting a structure in which one or a plurality of probes can be exchanged and an intermediate wiring board having a simple structure.

  The present invention is not limited to the above-described embodiment, and in a probe card for simultaneously inspecting all semiconductor chips on a large wafer, the present invention can be applied to a conventional cantilever type or a vertical type in addition to the thin plate probe according to the above-described embodiment. The probe tip position according to the gist of the present invention is configured to follow the thermal contraction of the silicon wafer, thereby solving problems such as contact failure due to relative position shift accompanying temperature change and breakage of connection points. A probe card that reliably inspects the electrical characteristics of all semiconductor chips even in a wide temperature range is provided at low cost.

1, 10A to 10D Probe 2, 20 Probe assembly 3 Probe assembly fixing plate 4 Intermediate wiring substrate 5 Metal base 6 External connection substrate 7 Reinforcement plate 8 Probe tip guide plate 11 Metal foil 12 Resin films 13A and 13B Parallel spring portion 14 Vertical probe 14A Probe tip 15a to 15d Parallel rod 16 Fixing part 17, 17A, 17B Conductive pattern 18 Output terminal 19 Notch 191A, 191B Stopper 21, 211 Support rods 21a to 21c, 211a to 211d Side surface 22a, 22b For fixing Side plate 23 Notches 24, 241, 242 Groove 31 Open portion 41A Non-conductive film 41B Copper foil 42 Pad portion 43 Wiring pattern 44 Through hole 45 Outer edge direction wiring board 46 Circumferential direction wiring board 461 Circumferential direction wiring pattern 47 Insulating film 48 Opening 51 Open Portion 52 Ring 53 Cover 61 Connection portion 62 Wiring path 63, 631 Land 64, 641 Through hole 65 Hole 71 Spacer 72, 73 Screw 81 Slit 100 Probe card 101 Holder 102 Inspected wafer 103 Electrode pad 104 Pogo pin 105 Inspected chip CTE1, CTE2, CTE3 Thermal expansion coefficient Pw, Pf Groove pitch Ws Stopper distance W1, W2 Notch opening width Wr, Wra, Wrb Support rod outer dimensions Wr1, Wr2 Support rod groove bottom surface distance

Claims (18)

In a probe card that makes a probe contact with a semiconductor chip to be inspected and performs electrical connection with a tester via the probe,
An external connection board having a connection portion to the tester and a wiring path from the connection portion on an outer edge portion;
An intermediate wiring board for connecting the external connection board and the probe;
A metal base having substantially the same diameter as the external connection board;
A probe assembly in which a plurality of the probes are regularly arranged and integrated at positions facing one or more semiconductor chip electrodes to be inspected;
A probe assembly fixing plate for arranging and fixing one set or two or more sets of the probe assemblies at positions facing a part or all of the semiconductor chip electrodes to be inspected on the semiconductor wafer;
The probe card, wherein the metal base, the external connection board, the intermediate wiring board, and the probe assembly fixing plate are fixed integrally.   The intermediate wiring board is sandwiched between the metal base and the probe assembly fixing plate, and is fixed at a plurality of positions at substantially equal intervals together with the metal base and the probe assembly fixing plate. The probe card according to claim 1.   A reinforcing plate, and the external connection substrate is sandwiched between the reinforcing plate and the metal base, and in a XY plane direction through a spacer having a height in the Z direction slightly larger than the thickness of the external connection substrate. The probe card according to claim 1, wherein the probe card is fixed at a plurality of positions along the probe card.   4. The material according to claim 1, wherein a thermal expansion coefficient of at least the reinforcing plate, the metal base, and the probe assembly fixing plate is made of a material that is close to a thermal expansion coefficient of a semiconductor wafer. The probe card according to any one of the above.   The probe uses a resin film to which a metal foil is bonded, and the metal foil is etched to form a conductive pattern made of a conductor including a probe function on the resin film, and protrudes from one side of the resin film. 2. The probe card according to claim 1, wherein the probe is a probe with a resin film having a conductor as a probe tip and a conductor protruding from an opposite side of the probe as a probe output terminal to the intermediate wiring board. .   The probe forms a conductor including a spring structure as a probe function to contact the semiconductor chip electrode to be etched by etching the metal foil, and the conductor protruding from the side opposite to the semiconductor chip electrode to be inspected 2. The probe card according to claim 1, wherein the probe card is a thin plate probe used as a probe output terminal to the intermediate wiring board.   The probe assembly is attached to one or two or more support rods sequentially or simultaneously in a notch obtained by processing a plurality of the probes on the surface of the probe, and the support rod is fixed to one or more support rods. The probe card according to any one of claims 1 to 4, wherein the probe card is integrally fixed to a side plate for use.   The probe assembly fixing plate has a plurality of lattice-shaped openings, and one or more of the openings and a part of the fixing side plate of the probe assembly are fitted or mechanically combined. 5. The probe card according to claim 1, wherein the probe assembly is fixed to the probe assembly fixing plate. A plurality of pad portions in contact with the probe output terminal on the surface of one or two or more non-conductive films, the intermediate wiring board;
5. The probe card according to claim 1, further comprising a wiring pattern portion extending in an outer edge direction from the pad portion and connected to the external connection substrate. 6. The intermediate wiring board has a plurality of pad portions that are in contact with the probe output terminals on the surface of one or more non-conductive films, and a wiring pattern portion that extends from the pad portions toward the external connection substrate. A first wiring board;
Second wiring having a wiring pattern including a plurality of circumferential wiring patterns connected to the first wiring board on the surface of one or more non-conductive films and connected to the external connection board The probe card according to any one of claims 1 to 4, wherein the probe card comprises a substrate.   The probe output terminal generates a spring force in the vertical direction (Z direction), contacts the connection pad of the intermediate wiring board by the repulsive force of the spring, and is not constrained in the plane direction (XY direction). The probe card according to any one of claims 1 to 4, characterized in that:   2. The probe card according to claim 1, wherein a part or all of each layer of the intermediate wiring board is a double-sided two-layer flexible flat cable.   There are a plurality of types of probes having different X-direction positions that are formed so that the relative positions of the adjacent probe output terminals in the probe longitudinal direction (X-direction) are roughly spaced apart by approximately 0.5 mm or more. The probe card according to any one of claims 1 to 4, wherein:   Plural types of probes having different lengths in the Z direction formed so that the vertical direction (Z direction) position of the tip of the probe output terminal coincides with the Z direction position of the pad in each layer of the plurality of intermediate wiring boards The probe card according to claim 1, wherein the probe card is present.   A semiconductor device to be inspected is a slit or notch having a width slightly larger than the cross-sectional shape in the vicinity of the contact portion with the electrode pad of the probe and substantially the same as or smaller than the pad width in the adjacent pad direction (Y direction). 2. A probe arrangement guide sheet, wherein a plurality of probe tips are arranged at positions corresponding to some or all of the pads of the chip, and probe tip positions are determined by inserting probe tips into the slits. The probe card according to claim 4.   The probe card according to any one of claims 1 to 4, wherein the probe array guide sheet is formed of a material having a thermal expansion coefficient approximate to that of a semiconductor wafer.   The probe has a notch for inserting the support rod, and an opening width (Z-direction width) of the notch is slightly larger than a Z-direction height of the support rod into which the notch is fitted, and the notch 8. The probe card according to claim 1, wherein the support bar is inserted from one direction along the XY plane from the open end side of the probe card.   18. A groove having a width slightly larger than a plate thickness of the probe is provided on at least one surface of the support bar that is in contact with the notch of the probe. Probe card as described in

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