JP2011114333A - Capacitor for versatile use - Google Patents
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- JP2011114333A JP2011114333A JP2009283408A JP2009283408A JP2011114333A JP 2011114333 A JP2011114333 A JP 2011114333A JP 2009283408 A JP2009283408 A JP 2009283408A JP 2009283408 A JP2009283408 A JP 2009283408A JP 2011114333 A JP2011114333 A JP 2011114333A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 51
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 38
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 25
- 239000010959 steel Substances 0.000 claims abstract description 25
- 239000000654 additive Substances 0.000 claims abstract description 10
- 230000000996 additive effect Effects 0.000 claims abstract description 10
- -1 radical nitride Chemical class 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000003860 storage Methods 0.000 claims description 21
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 10
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000446 fuel Substances 0.000 abstract description 7
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052454 barium strontium titanate Inorganic materials 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000003989 dielectric material Substances 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 7
- 230000003321 amplification Effects 0.000 description 7
- 229910001416 lithium ion Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052987 metal hydride Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229920003026 Acene Polymers 0.000 description 2
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000002608 ionic liquid Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Secondary Cells (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
電気（ＥＶ）自動車およびハイブリッド自動車のエコカーまたは太陽電池や燃料電池等に設ける蓄電器であり、二次電池および半導体素子を設けた構成に関する多用途利用の蓄電器である。 It is a capacitor provided in an eco-car of an electric (EV) vehicle and a hybrid vehicle, a solar cell, a fuel cell, or the like, and is a versatile capacitor related to a configuration in which a secondary battery and a semiconductor element are provided.
イオン液体採用の電気二重層キャパシタ。
電気二重層キャパシタは、炭素を主成分とする電極と電解質から構成される電気を貯蔵するデバイス、電気エネルギーは電極表面に形成されるイオンの吸着層に蓄えられる。具体例として、日清紡（株）が新規のＤＥＭＥ系イオン液体を開発し、パワー密度とエネルギー密度を世界最高レベルで両立させた大型の電気二重層キャパシタＮ’ＣＡＰ［日本無線（株）商品名］の電解液として採用されている。Electric double layer capacitor using ionic liquid.
An electric double layer capacitor is a device for storing electricity composed of an electrode mainly composed of carbon and an electrolyte, and electric energy is stored in an adsorption layer of ions formed on the electrode surface. As a specific example, Nisshinbo Co., Ltd. has developed a new DEME ionic liquid, a large electric double layer capacitor N'CAP that has both power density and energy density at the highest level in the world [trade name of Japan Radio Co., Ltd.] It is adopted as an electrolyte.
ポリアセン系キャパシタ。
ポリアセニック系有機半導体ＰＡＳはフェノール樹脂の特殊な熱縮合反応によって得られる導電性高分子である。ＰＡＳを正負両極に用いたポリアセンキャパシタは高容量で、そのアモルファス構造に多くのイオンを蓄えることができるため、従来の電気二重層コンデンサと比較すると大きな容量を有している。コイン型ＰＡＳキャパシタは携帯電話、デジタルカメラに代表されるモバイル機器のリアルタイムクロックのバックアップ電源として世界中で広く採用されている。Polyacene capacitor.
The polyacenic organic semiconductor PAS is a conductive polymer obtained by a special thermal condensation reaction of a phenol resin. A polyacene capacitor using PAS for both positive and negative electrodes has a high capacity and can store a large amount of ions in its amorphous structure, and therefore has a larger capacity than a conventional electric double layer capacitor. Coin-type PAS capacitors are widely used around the world as backup power sources for real-time clocks of mobile devices such as mobile phones and digital cameras.
各種二次電池。
二次電池には鉛蓄電池、ニッカド電池、ニッケル水素電池、リチウムイオンポリマー電池、リチウムイオン電池等があり、太陽電池と組み合わせた蓄電池としてはニッケルカドミウム電池や鉛蓄電池等がある。ハイブリッド車や電気自動車向け電池には、ニッケル水素電池やリチウムイオン電池およびリチウムイオンポリマー電池等である。Various secondary batteries.
Secondary batteries include lead storage batteries, nickel cadmium batteries, nickel metal hydride batteries, lithium ion polymer batteries, lithium ion batteries, and the like. Examples of storage batteries combined with solar batteries include nickel cadmium batteries and lead storage batteries. Examples of batteries for hybrid vehicles and electric vehicles include nickel metal hydride batteries, lithium ion batteries, and lithium ion polymer batteries.
ハイブリッド車などには現在ニッケル水素電池が搭載されているのであり、電気自動車（ＥＶ）には高出力のリチウムイオン電池が必要とされる。中小型車クラスでは従来のＥＶ専用電池と関連システムの製造コストが１台当たり３００万円程度とみられる。海外では米ベンチャーのテスラ・モーターズ（カリフォルニア州）がデジタル家電用電池を搭載したＥＶ「テスラ・ロードスター」を２００８年３月から量産している。パナソニックはデジタル家電や電動工具に使われる円筒型の小さな電池の技術を応用し、同電池を数千個積むことでＥＶ専用電池並みの出力を確保。これらの電池を細かく制御する技術の開発を進めて、ＥＶ１台当たりの電池製造コストを従来型の３分の１程度に引き下げることを目指す。としている。 A nickel-metal hydride battery is currently mounted on a hybrid vehicle or the like, and a high-power lithium ion battery is required for an electric vehicle (EV). In the small and medium-sized car class, the manufacturing cost of conventional EV batteries and related systems is expected to be around 3 million yen per car. Overseas, Tesla Motors (California), a US venture, has mass-produced the EV “Tesla Roadster” equipped with batteries for digital home appliances since March 2008. Panasonic applied the technology of small cylindrical batteries used in digital home appliances and power tools, and secured thousands of batteries to ensure the same output as EV batteries. We aim to reduce the battery manufacturing cost per EV to about one-third of the conventional type by developing technology to control these batteries in detail. It is said.
現在、電気自動車にリチウムイオン電池を搭載した場合、１回の充電で走れる距離は中型車で１００ｋｍ、小型車で１５０ｋｍとされ、一度の給油で５００ｋｍ超を走るガソリン車に劣る。プロジェクトでは電池１ｋｇ当たりにためられる電力を現行の３倍に高める技術を開発し、走行距離を伸ばす。経済産業省所管の新エネルギー・産業技術総合開発機構（ＮＥＤＯ）は、京大に研究拠点のプロジェクトを設置し、参加企業などから５０人以上が常駐して各社が必要な共通の基盤技術を開発する。 Currently, when a lithium ion battery is mounted on an electric vehicle, the distance that can be driven by one charge is 100 km for a medium-sized vehicle and 150 km for a small vehicle, which is inferior to a gasoline vehicle that runs more than 500 km with a single refueling. The project will develop technology to increase the amount of electricity stored per kilogram of battery to three times the current level and extend the mileage. The New Energy and Industrial Technology Development Organization (NEDO), under the jurisdiction of the Ministry of Economy, Trade and Industry, has established a research base project at Kyoto University, and more than 50 people from participating companies are stationed to develop common basic technologies that each company needs. To do.
韓国の電気自動車（ＥＶ）ベンチャー、ＣＴ＆Ｔは日本で２人乗りの電気自動車を発売、最高時速７０ｋｍのＥＶ車。電池は鉛電池とリチウムポリマー電池の２種類。家庭用電源で充電でき、１回のフル充電での走行距離は７０〜１２０ｋｍである。 Korea ’s electric vehicle (EV) venture, CT & T, launched a two-seater electric vehicle in Japan, an EV vehicle with a maximum speed of 70 km / h. There are two types of batteries: lead batteries and lithium polymer batteries. It can be charged with a household power supply, and the mileage in one full charge is 70 to 120 km.
電気自動車（ＥＶ）の専用電池（リチウムイオン電池）での走行距離は１００ｋｍ〜１５０ｋｍであり、製造コストは１台当たり３００万円程度である。ＥＶ車の走行距離を伸ばし、製造コストの引き下げ、軽量化等の蓄電器を開発するものであり、電気自動車（ＥＶ）およびハイブリッド車のエコカーまたは太陽電池や燃料電池等に設ける多用途利用の蓄電器を開発しようとするものである。 The travel distance of a dedicated battery (lithium ion battery) for an electric vehicle (EV) is 100 to 150 km, and the manufacturing cost is about 3 million yen per vehicle. We are developing a battery that extends the mileage of EV cars, lowers manufacturing costs, and reduces weight. Electric power storage (EV) and hybrid cars that are installed in eco-cars, solar cells, fuel cells, etc. It is something to be developed.
１・極薄鋼電極板に銅板等を設けた正極２および負極４の電極板に、アモルファスシリコン３を設けて、電極板および誘電体を渦巻き状に巻き上げて円筒型または多角筒型に設けた蓄電器。
２・極薄鋼電極板に銅板等を設け、角波状に設けた正極１０および負極１２の電極板を交互に設けて、アモルファスシリコン１１の誘電体を設けた積層型の蓄電器。
３・アモルファスシリコンにチタン酸バリウムおよびチタン酸ストロンチウム等を設け、シフターやディプレッサー作用を設けた比誘電率の高い添加物をアモルファスシリコンに設け、極薄鋼電極板に設けた蓄電器。
４・極薄鋼電極板にラジカル酸化膜またはラジカル窒化膜の絶縁膜を設け、誘電体となるアモルファスシリコン等を設けた蓄電器。
５・蓄電器の一定な電流の持続に二次電池を設け、電流増幅作用および制御等に半導体素子と二次電池を設けた蓄電器。
６・蓄電器および二次電池の過充電を防ぐため、半導体素子を設ける。1.
2. A stacked type capacitor in which a copper plate or the like is provided on an ultrathin steel electrode plate, and the
3. An accumulator that is provided on an ultra-thin steel electrode plate with amorphous silicon and barium titanate and strontium titanate, etc., and a high relative dielectric constant additive with shifter and depressor action.
4. A capacitor in which an insulating film such as a radical oxide film or radical nitride film is provided on an ultrathin steel electrode plate and amorphous silicon or the like serving as a dielectric is provided.
5. A storage battery in which a secondary battery is provided for maintaining a constant current of the battery, and a semiconductor element and a secondary battery are provided for current amplification and control.
6. A semiconductor element is provided to prevent overcharging of the battery and the secondary battery.
正極２および負極４となる極薄鋼電極板の厚さを０．０１ｍｍ〜０．０５ｍｍ程度の銅板等を設けた電極板に、アモルファスシリコンを設けるのである。この誘電体となるアモルファスシリコン３膜の厚さは１μｍ程度であり、蓄電器の電極板および誘電体を渦巻き状に設けて実効表面積を大きくし、電極間隔を１μｍ程度に設けた、静電容量を大きく設けた円筒型または多角筒型の蓄電器である。
角波状等に設けた正極１０および負極１２の極薄鋼電極板の厚さは、０．０１ｍｍ〜０．０５ｍｍ程度の銅板等を交互に設けた電極板に、１μｍ程度のアモルファスシリコン１１を設けるのである。電極板を角波状等に設けて実効表面積および強度を大きくし、電極間隔を１μｍ程度の積層に設けた静電容量を大きく設けた積層型蓄電器である。Amorphous silicon is provided on an electrode plate provided with a copper plate having a thickness of about 0.01 mm to 0.05 mm of the ultrathin steel electrode plate to be the
As for the thickness of the ultrathin steel electrode plates of the
アモルファスシリコンに比誘電率の高いチタン酸バリウム等を設け、静電容量が大きい誘電体を設けるのである。チタン酸バリウムにチタン酸ストロンチウム等の混ぜ物を設け、シフターやディプレッサー作用を設けた添加物を設けて常温で高い誘電率のアモルファスシリコン膜を設けた蓄電器であり、極薄鋼電極板の銅板等にラジカル酸化膜またはラジカル窒化膜の絶縁膜を設けて、誘電体の絶縁耐力を大きく設けた蓄電器である。 Amorphous silicon is provided with a high dielectric constant such as barium titanate, and a dielectric having a large capacitance is provided. It is a capacitor with a mixture of strontium titanate, etc. in barium titanate, an additive with shifter and depressor action, and an amorphous silicon film with a high dielectric constant at room temperature. This is a capacitor in which an insulating film of a radical oxide film or a radical nitride film is provided on the dielectric layer to increase the dielectric strength of the dielectric.
電気容量をもった蓄電器の一定な持続電流には、二次電池との併用であり、電流増幅作用や制御等に半導体素子を設けるのである。この蓄電器の持続電流および半導体素子に流す電流には、二次電池の電流を用いるのであり、蓄電器と半導体素子および二次電池を設けた構成である。 A constant current of a capacitor having electric capacity is used in combination with a secondary battery, and a semiconductor element is provided for current amplification and control. The current of the secondary battery is used as the continuous current of the capacitor and the current flowing through the semiconductor element, and the capacitor, the semiconductor element, and the secondary battery are provided.
蓄電器および二次電池の充電に半導体素子を設け、半導体素子の制御により蓄電器および二次電池の過充電を防ぐのである。また、太陽電池や燃料電池の蓄電も同様である。 A semiconductor element is provided for charging the battery and the secondary battery, and overcharging of the battery and the secondary battery is prevented by controlling the semiconductor element. The same applies to the storage of solar cells and fuel cells.
請求項１の実施例について説明する。
円筒型または多角筒型の蓄電器は、正極２および負極４の極薄鋼電極板にアモルファスシリコン３を設けて渦巻き状に巻き上げた構成の蓄電器。
円筒型または多角筒型（図１の参考図参照）の蓄電器は、上方に開口部を有する円筒型または多角筒型の金属外装缶１と正極２および負極４となる極薄鋼電極板にアモルファスシリコン３を設けて渦巻き状に巻き上げるのであり、負極４の電極板は金属外装缶１負極端子に設け、正極２の電極板は正極端子６を設けた金属軸５に設けるのである。下部絶縁板９および上部絶縁板８を設けた金属外装缶１上方の開口部は封口蓋および絶縁パッキン７を設けて封口するのである。An embodiment of
The cylindrical or polygonal tube type capacitor is a capacitor having a configuration in which
A cylindrical or polygonal tube type (see the reference diagram of FIG. 1) has an amorphous cylindrical or polygonal tube outer metal can 1 and an ultrathin steel electrode plate that forms a
真空に保たれた反応室内に高純度のシリコンを含んだガスを導入し、放電により高いエネルギーを加えることによって原料ガスを分解し、分解されてできた高純度のシリコンは、２００℃〜３００℃に加熱された極薄鋼電極の基板上に堆積され、アモルファスシリコン膜が形成される。アモルファスシリコン３膜が形成された極薄鋼電極の正極２および負極４の電極板を、渦巻き状に巻き上げるのである。
この高純度のシリコンを含んだガスの製造は、アモルファスシリコン太陽電池の製造方法である。一般的な特徴としては以下のような点がある。▲１▼製造に必要な温度が３００℃でよい。▲２▼アモルファスシリコン３膜の厚さが１μｍ以下でよい。▲３▼ガス反応であるため大面積化が容易等である。A gas containing high-purity silicon is introduced into a reaction chamber kept in a vacuum, and the source gas is decomposed by applying high energy by discharge, and the high-purity silicon produced by decomposition is 200 ° C. to 300 ° C. The amorphous silicon film is formed by depositing on the substrate of the ultra-thin steel electrode heated to 1 mm. The electrode plates of the
The production of a gas containing high-purity silicon is a method for producing an amorphous silicon solar cell. General features include the following points. (1) The temperature required for production may be 300 ° C. (2) The thickness of the
極薄鋼電極板には銅板等を設けるのであり、厚さは０．０１ｍｍ／０．０３ｍｍ／０．０５ｍｍ程度の銅板等を用いた正極２および負極４の電極板であり、厚さ１μｍ程度の高純度アモルファスシリコン３膜を設けるのである。アモルファスシリコン３膜を設けた正極２の電極板は正極端子６を設けた金属軸５に設けるのであり、アモルファスシリコン３膜を設けた負極４の電極板は金属外装缶１負極端子に設けた蓄電器である。 The ultra-thin steel electrode plate is provided with a copper plate or the like, and is a
請求項２の実施例について説明する。
積層型蓄電器は、角波状等に設けた正極１０および負極１２の極薄鋼電極板を交互に設けて、アモルファスシリコン１１を設けた積層構成の蓄電器。
積層型（図２および図３の参考図参照）蓄電器は、正極１０および負極１２の極薄鋼電極板を角波状等に設け、アモルファスシリコン１１を設けるのであり、電極板は交互に設けるのである。正極１０は正極端子１６を設けた正極集電板１４に設け、負極１２は負極端子１７を設けた負極集電板１５に設けて外装１３で被うのである。この積層型蓄電器の極薄鋼電極板を角波状等に設けるのは、電極板やアモルファスシリコン膜の表面積および強度を大きく設けるのであり、多くの静電容量を設けた積層構成である。また銅板等を設けた極薄鋼電極板の厚さおよび高純度のアモルファスシリコン膜の厚さについては、実施例１に記述と同様であり省略する。An embodiment of
The stacked capacitor is a stacked capacitor in which amorphous silicon 11 is provided by alternately providing ultrathin steel electrode plates of
In the stacked type (refer to the reference diagrams in FIGS. 2 and 3), the ultrathin steel electrode plates of the
請求項３の実施例について説明する。
誘電体となるアモルファスシリコンに、シフター（ｓｈｉｆｔｅｒ）およびディプレッサー（ｄｅｐｒｅｓｓｏｒ）作用を設けた比誘電率の高い添加物を設けた蓄電器。
アモルファスシリコンに比誘電率の高いチタン酸バリウムおよびチタン酸ストロンチウム等を混ぜ、温度移動のシフターおよび特性のピークをおさえるディプレッサーを設けるのである。
真空に保たれた反応室内に高純度のシリコンを含んだガス、原料ガスを導入し、放電により高いエネルギーを加えることによって原料ガスを分解し、分解されてできたシリコンは、２００℃〜３００℃に加熱され、極薄鋼電極板の銅板等の基板上に堆積するのである。この際、原料ガスにチタン酸バリウムおよびチタン酸ストロンチウム等の添加物を混ぜ、誘電率がきわめて大きいアモルファスシリコン膜が形成されるのである。添加物であるチタン酸バリウムに、シフター作用（温度移動）のチタン酸ストロンチウムやジルコン酸バリウムおよびディプレッサー作用（ピークを抑える）のチタン酸マグネシウムやチタン酸カルシウムなどを少し混ぜ、常温で高い誘電率の誘電体を設けるのである。この誘電体と電極板を渦巻き状に設けた円筒型または多角筒型の蓄電器であり、電極板を交互の積層に設けた積層型蓄電器である。An embodiment of
A capacitor in which an amorphous silicon serving as a dielectric is provided with an additive having a high relative dielectric constant that provides a shifter and a depressor.
Amorphous silicon is mixed with barium titanate and strontium titanate having a high relative dielectric constant, and a shifter for temperature shift and a depressor for suppressing the characteristic peak are provided.
A gas containing high-purity silicon and a raw material gas are introduced into a reaction chamber kept in a vacuum, and the raw material gas is decomposed by applying high energy by electric discharge. And deposited on a substrate such as a copper plate of an ultrathin steel electrode plate. At this time, an additive such as barium titanate and strontium titanate is mixed into the raw material gas to form an amorphous silicon film having a very large dielectric constant. Barium titanate, an additive, is mixed with strontium titanate or barium zirconate for shifter action (temperature transfer) and magnesium titanate or calcium titanate for depressor action (suppresses the peak), and has a high dielectric constant at room temperature. This dielectric is provided. This is a cylindrical or polygonal tube type capacitor in which the dielectric and the electrode plate are provided in a spiral shape, and is a stacked type capacitor in which the electrode plates are provided in alternating layers.
請求項４の実施例について説明する。
極薄鋼電極板にラジカル酸化膜またはラジカル窒化膜の絶縁膜を設け、誘電体となるアモルファスシリコン等を設けた蓄電器。
銅板等の極薄鋼電極板にラジカル酸化膜またはラジカル窒化膜を設けて、誘電体となるアモルファスシリコン膜の絶縁耐力を大きく設けた構成である。酸化絶縁膜または窒化絶縁膜は、ラジカル酸化やラジカル窒化であり、４００〜６００℃程度の温度で行われる絶縁膜である。絶縁膜の厚さは７ｎｍ以下への薄膜化の可能性が確認されたマイクロ波励起高密度プラズマ装置による。この酸化絶縁膜や窒化絶縁膜を極薄鋼電極板に設けて、アモルファスシリコンの絶縁耐力を大きく設けた構成である。チタン酸バリウム等の添加物を設けた比誘電率の高いアモルファスシリコンである。添加物を設けたアモルファスシリコンを、ラジカル酸化または窒化の絶縁膜を設けた極薄鋼電極板に設けるのであり、絶縁耐力を大きく設けた静電容量が大きい蓄電器である。An embodiment of
A capacitor in which an insulating film of radical oxide film or radical nitride film is provided on an ultrathin steel electrode plate, and amorphous silicon or the like serving as a dielectric is provided.
In this configuration, a radical oxide film or radical nitride film is provided on an ultrathin steel electrode plate such as a copper plate, and the dielectric strength of an amorphous silicon film serving as a dielectric is increased. The oxide insulating film or the nitride insulating film is radical oxidation or radical nitridation, and is an insulating film performed at a temperature of about 400 to 600 ° C. The thickness of the insulating film is based on a microwave-excited high-density plasma apparatus that has been confirmed to be thinned to 7 nm or less. This oxide insulating film or nitride insulating film is provided on an ultrathin steel electrode plate, and the dielectric strength of amorphous silicon is greatly increased. Amorphous silicon having a high relative dielectric constant provided with an additive such as barium titanate. Amorphous silicon provided with an additive is provided on an ultrathin steel electrode plate provided with an insulating film of radical oxidation or nitriding, and is a capacitor having a large capacitance with a large dielectric strength.
請求項５の実施例について説明する。
蓄電器において、蓄電器の一定な電流の持続および電流増幅作用等の制御に、半導体素子と二次電池を設けた構成の蓄電器。
電気容量の大きい導体系をコンデンサーと呼び、蓄電器ともいう。電気容量をうるための装置。電気容量をもったコンデンサーに電圧を加えると電荷が蓄積される。直流の場合には電荷は蓄積されるが電流が流れない。コンデンサーの正極と負極の両極をつなぐと、電荷は流れて移動する。このとき電荷が流れて電流になる。この電流は時間とともに激しく変化し、短い時間だけ続くのである。しかし二次電池を使えば持続し、時間的に一定な電流を流すことができるのである。正極と負極の間に二次電池に無理にならないくらいの電流を流すと、持続電流が流れるのである。したがって、蓄電器の一定な電流の持続に二次電池を設けるのである。An embodiment of
A capacitor having a configuration in which a semiconductor element and a secondary battery are provided for controlling a constant current and a current amplifying function of the capacitor.
A conductor system having a large electric capacity is called a capacitor and is also called a capacitor. A device for obtaining electrical capacity. When a voltage is applied to a capacitor having an electric capacity, charges are accumulated. In the case of direct current, charges are accumulated but no current flows. When the positive and negative electrodes of the capacitor are connected, the charge flows and moves. At this time, electric charge flows and becomes current. This current changes drastically with time and lasts only for a short time. However, if a secondary battery is used, it can be sustained and a constant current can flow. If a current that does not force the secondary battery flows between the positive electrode and the negative electrode, a continuous current flows. Therefore, the secondary battery is provided to maintain a constant current of the capacitor.
電流増幅作用のＮＰＮ型トランジスタ、Ｎ型半導体にはコレクタ（Ｃ）、Ｐ型半導体にはベース（Ｂ）、Ｎ型半導体にはエミッタ（Ｅ）の名称を設け、コレクタ（Ｃ）とエミッタ（Ｅ）間は反対方向のダイオードが接続されているため、直流電圧をかけても電流は流れないのであるが、ベース（Ｂ）に小さい別の電圧をかけると、コレクタ（Ｃ）とエミッタ（Ｅ）間には５０〜２００倍位の電流が流れる。このベース（Ｂ）に用いる電流に二次電池を設けた増幅作用である。この電流増幅作用の記述は基本構成であり、現在ではＩＣ・ＬＳＩ・超ＬＳＩ・ジョセフソン素子・ガリウムひ素などの素子技術である。したがって、電流増幅作用および制御等に半導体素子を設けるのである。 An NPN transistor having a current amplification function, a collector (C) is provided for an N-type semiconductor, a base (B) is provided for a P-type semiconductor, and an emitter (E) is provided for an N-type semiconductor. ), Diodes in opposite directions are connected so that no current flows even when a DC voltage is applied. However, if another small voltage is applied to the base (B), the collector (C) and the emitter (E) A current of about 50 to 200 times flows between them. This is an amplification effect in which a secondary battery is provided for the current used for the base (B). This description of the current amplification action is a basic configuration, and is currently an element technology such as IC, LSI, ultra LSI, Josephson element, gallium arsenide. Therefore, a semiconductor element is provided for current amplification and control.
多用途利用の蓄電器は二次電池と併用に設けるのであり、電流増幅作用の半導体素子にも二次電池を要するのである。蓄電器および二次電池と半導体素子はシステム構成で設けるのが効率向上であり、高効率である。この高効率のシステム構成を電気（ＥＶ）自動車およびハイブリッド自動車に設けて、走行距離を伸ばすのである。 The multipurpose battery is provided in combination with a secondary battery, and a secondary battery is also required for a semiconductor element having a current amplification function. The capacitor, the secondary battery, and the semiconductor element are provided with a system configuration in order to improve efficiency and high efficiency. This high-efficiency system configuration is provided in electric (EV) vehicles and hybrid vehicles to extend the mileage.
請求項６の実施例について説明する。
蓄電器および二次電池の充電において、過充電を防ぐ制御に半導体素子を設けた構成の蓄電器と二次電池。
蓄電池および二次電池の充電には過充電を防ぐのが重要である。過充電を防ぐ制御に半導体素子を設けるのであり、充電時の電源が半導体素子の作動電源である。蓄電器および二次電池の充電には半導体素子の作動および制御により、過充電を防ぐのである。また太陽電池や燃料電池等の蓄電も同様である。An embodiment of claim 6 will be described.
A battery and a secondary battery having a configuration in which a semiconductor element is provided in a control for preventing overcharging in charging of the battery and the secondary battery.
It is important to prevent overcharging when charging storage batteries and secondary batteries. The semiconductor element is provided for the control to prevent overcharging, and the power source at the time of charging is the operating power source of the semiconductor element. The charging of the battery and the secondary battery prevents overcharging by operating and controlling the semiconductor element. The same applies to power storage such as solar cells and fuel cells.
本出願の参考文献。
１・〈重点解説〉最先端化学技術のエッセンス
編著者 先端化学技術研究 発行所 株式会社工業調査会。
２．世界をリードする半導体共同研究プロジェクト −日本半導体産業復活のために− 編 者 垂井康夫 発行所 株式会社工業調査会。
３・入門エレクトロニクス 不思議な石ころ 電子セラミックス
著 者 泉 弘志 発行所 株式会社誠文堂新光社。
４・電気のことがわかる事典
編 者 ＨＯＭＥ ＥＬＥＣＡ 発行所 株式会社西東社。
５・サイエンスシリーズ 太陽電池博士による 太陽電池もの知り博士になる本 著 者 桑野幸徳 発行所 株式会社パワー社。
６・世界大百科事典 電気 発行所 平凡社。
７・世界大百科事典 コンデンサー 発行所 平凡社。
８・世界代百科事典 チタン酸バリウム 発行所 平凡社。
９・オール日本で次世代蓄電池 ２００９年 ６月１１日 新聞掲載、
１０・パソコンの電池・車の動力に転用 ２００９年 ９月３０日 新聞掲載、
１１・韓国ＶＢ低価格の電気自動車発売 ２００９年１０月２３日 新聞掲載、
新聞掲載文一部抜粋 日本経済新聞。References for this application.
1. <Important commentary> Essence of advanced chemical technology
Author of Advanced Chemical Technology Research Institute Industrial Research Co., Ltd.
2. World's Leading Semiconductor Joint Research Project-For the Revival of the Japanese Semiconductor Industry-Editor Yasuo Tarui Publishing House Industrial Research Co., Ltd.
3. Introductory Electronics Mysterious Stone Electronic Ceramics
Author Hiroshi Izumi Publisher Seibundo Shinkosha Co., Ltd.
4. Encyclopedia that understands electricity
Editor HOME ELECA Publishing Office
5 Science Series Book written by Dr. Solar Battery to become a doctor who knows about solar cells.
6. World Encyclopedia Electricity Issuer Heibonsha.
7. World Encyclopedia Capacitor Publishing Office Heibonsha.
8. Encyclopedia of world generation Barium titanate issuing place Heibonsha.
9. All-Japan next-generation storage battery June 11, 2009 Published in newspaper,
10. Diverted to PC battery / car power 2009 September 30 Newspaper publication,
11. Korea VB low-priced electric car sale October 23, 2009 Newspaper publication,
Partial excerpts from newspapers The Nihon Keizai Shimbun.
極薄鋼（厚さ０．０１〜０．０５ｍｍ程度）に銅板等の電極板を設け、誘電体にはアモルファスシリコン（厚さ１μｍ程度）を設けた渦巻き状または積層に設けた蓄電器は、静電容量の効率向上であり、より多くの静電容量を設けるために誘電体のアモルファスシリコンにチタン酸バリウム等の添加物を設けた高効率の静電容量を設けた蓄電器である。この蓄電器を太陽電池および燃料電池等の蓄電に設けるのであり、大きな静電容量を設けた蓄電器の一定な電流の持続には二次電池との併用で設けるのである。 A capacitor provided in a spiral or stacked structure in which an electrode plate such as a copper plate is provided on ultra-thin steel (thickness of about 0.01 to 0.05 mm) and amorphous silicon (thickness of about 1 μm) is provided as a dielectric, This is an electric storage device provided with a high-efficiency electrostatic capacity in which an additive such as barium titanate is provided in a dielectric amorphous silicon in order to improve the electric capacity efficiency and to provide more electrostatic capacity. This power storage device is provided for power storage such as a solar cell and a fuel cell, and in order to maintain a constant current of a power storage device provided with a large capacitance, it is provided in combination with a secondary battery.
大きな静電容量を設けた蓄電器および半導体素子と二次電池をシステムで設けて、電気自動車等に搭載するのである。搭載には蓄電器の持続電流および半導体素子の少量の電流に二次電池を設けるのであり、主体の蓄電器および二次電池と半導体素子をシステム構成で設けるのである。
ＥＶ車への搭載重量の軽量化および蓄電器の低価格化、半導体素子を設けた効率化や二次電池の少量化であり、電気（ＥＶ）自動車等の走行距離の延長である。
現在、一回のフル充電での電気自動車の走行距離は１００〜１５０ｋｍ程度であり、蓄電器を設けたシステム構成では３００ｋｍを目指し、ガソリン車並みの走行距離が目標である。また、ハイブリッド自動車も同様である。A capacitor and a semiconductor element provided with a large capacitance and a secondary battery are provided in the system and mounted on an electric vehicle or the like. For mounting, a secondary battery is provided for the continuous current of the capacitor and a small amount of current of the semiconductor element, and the main capacitor, the secondary battery and the semiconductor element are provided in a system configuration.
This is a reduction in the weight mounted on an EV car, a reduction in the price of a capacitor, an increase in efficiency provided with semiconductor elements and a reduction in the amount of secondary batteries, and an extension of the travel distance of an electric (EV) car or the like.
Currently, the mileage of an electric vehicle with one full charge is about 100 to 150 km, and the system configuration with a capacitor aims at 300 km, and the mileage of a gasoline car is the target. The same applies to hybrid vehicles.
半導体素子を設けた制御により、蓄電器および二次電池の充電における過充電を防ぐのであり、太陽電池や燃料電池等からの蓄電も同じである。 The control provided with the semiconductor element prevents overcharge in the charging of the battery and the secondary battery, and the same is true for power storage from a solar battery or a fuel battery.
１ 金属外装缶・負極端子
２ 正極
３ アモルファスシリコン
４ 負極
５ 金属軸
６ 正極端子
７ 絶縁パッキン
８ 上部絶縁板
９ 下部絶縁板
１０ 正極
１１ アモルファスシリコン
１２ 負極
１３ 外装
１４ 正極集電板
１５ 負極集電板
１６ 正極端子
１７ 負極端子DESCRIPTION OF
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