JP2011109033A - In-layer lens and method for manufacturing the same, color filter and method for manufacturing the same, solid-state image pickup element and method for manufacturing the same and electronic information equipment - Google Patents

Abstract

Light reflection at a film interface is minimized and the distance from a microlens to a light receiving part is shortened to suppress a decrease in the amount of incident light to the light receiving part.
An intra-layer lens is formed on a base step using a transparent insulating film material (photosensitive positive high refractive index material having development solubility) using a gradation mask, and another gradation is formed. In order to form a color filter (photosensitive negative material having development solubility) directly on the mask, a two-layer flattening film is formed between the light receiving portion 2 and the color filter 8 as in the prior art. Therefore, the number of different film interfaces decreases, light reflection occurring at the interface can be suppressed, and the distance from the microlens 10 to the light receiving unit 2 is shortened.
[Selection] Figure 1

Description

  The present invention relates to an intra-layer lens discretely arranged in a predetermined color arrangement for each pixel and a manufacturing method thereof, a color filter provided on or above the intra-lens and a manufacturing method thereof, the intra-layer lens and / or Solid-state imaging device comprising a semiconductor element that photoelectrically converts image light from a subject through a color filter and imaging the same, and manufacturing method thereof, for example, a digital video camera and a digital still using the solid-state imaging device as an image input device in an imaging unit The present invention relates to an electronic information device such as a digital camera such as a camera, an image input camera such as a surveillance camera, a scanner device, a facsimile device, a television telephone device, and a mobile phone device with a camera.

  In this type of conventional solid-state imaging device, a technique for taking light from an oblique light into a light-receiving portion as the pixel size is reduced by shortening the exit pupil distance between the camera lens and the solid-state imaging device or by increasing the number of pixels. In addition, a convex intra-layer lens is provided in a layer below the micro lens corresponding to the light receiving unit, separately from the micro lens. A conventional solid-state imaging device will be described in detail below with reference to the drawings.

  FIG. 13 is a longitudinal sectional view showing an example of the configuration of the main part of a conventional solid-state imaging device.

  As shown in FIG. 13, the conventional solid-state imaging device 100 is provided with a plurality of light receiving units 102 that are formed in a matrix on a semiconductor substrate 101 and photoelectrically convert image light from a subject to image it. . Between adjacent light receiving portions 102 on the semiconductor substrate 101, a charge transfer region 103 for transferring a signal charge from one light receiving portion 102 is disposed, and a charge transfer electrode 104 is disposed thereon via an insulating film (not shown). It is arranged. An insulating film 105 is formed on the entire surface of the semiconductor substrate 101 and the charge transfer electrode 104. A light shielding film 106 is formed on the insulating film 105 on the charge transfer electrode 104. The light shielding film 106 is opened on the light receiving portion 102 for light incidence.

  A base step is formed between the formation region of the charge transfer electrode 104 and the light shielding film 106 and the formation region of the light receiving portion 102. A transparent flattening film 107 is formed in order to flatten the base step, and an in-layer lens 108 for condensing light to the light receiving unit 102 is formed thereon.

  A transparent flattening film 109 is formed on the in-layer lens 108, and color filters 110 of the respective colors are formed on the flattening film 109 so as to correspond to the positions of the light receiving unit 102 and the in-layer lens 108. Each color filter 110 has a first-layer color filter 110a and a second-layer or third-layer color filter 110b.

  A microlens 112 corresponds to the position of the light receiving unit 102 and the intralayer lens 108 via a transparent flattening film 111 on the color filter 110 of each color, and in a matrix form corresponding to each of the color filters 110 of each color. Is formed.

  As described above, in order to form the in-layer lens 108, the base step is flattened by the flattening film 107 of the transparent film, and further, the step of the in-layer lens 108 is flattened to form the color filter 112. The surface is flattened by the chemical film 109.

  The flattening films 107 and 109 are formed by, for example, applying a non-photosensitive coating material, and etching back the coating material using a single wafer microwave plasma etcher as necessary, and adjusting the film thickness. To do.

  The convex intra-layer lens 108 is formed by, for example, applying a photosensitive high refractive index material (positive type) having development solubility, and a gradation mask having a transmittance between maximum and minimum transmittance. Alternatively, exposure is performed using a maximum or minimum normal photomask, or exposure is performed by adjusting an exposure amount and focus during exposure, and development is performed.

  The color filter 112 is formed by, for example, applying a photosensitive coating material (negative type), exposing using a normal photomask, and developing.

  FIG. 14 is a longitudinal sectional view showing an example of the configuration of the main part of a conventional solid-state imaging device disclosed in Patent Document 1.

  As shown in FIG. 14, in the conventional method of forming the intralayer lens 201 of the solid-state imaging device 200, first, necessary impurity ions are implanted into the semiconductor portion 202, and the light receiving portion 203, the readout gate portion 204, and the like. After each CCD transfer channel (charge transfer unit) 205 is formed, a charge transfer electrode 207 is formed in a predetermined pattern on the surface via an insulating film 206, and this charge transfer electrode 207 is covered via an interlayer insulating film 208. A light shielding film 209 is formed. The light shielding film 209 is patterned so as to have an opening on the light receiving portion 203.

  Next, a first planarization layer 210 is formed on the light shielding film 209 by using a film formed by reflow, such as a BPSG film or a film formed by HDP (high density plasma) CVD method, and the surface is planarized. .

  Furthermore, the BPSG film can have a flat surface after reflow by defining the composition of BPSG and the reflow temperature.

  At this time, the light shielding film 209 is formed by selecting a material to be the light shielding film 209 in accordance with the planarization method used for the material of the first planarization layer 210. For example, when reflow at a high temperature is necessary for planarization, a high melting point metal such as tungsten, tungsten silicide, molybdenum, titanium, or the like is formed on the light shielding film 209.

  On the other hand, when an HDPCVD film is used for the first planarizing layer 210, the first planarizing layer 210 can be formed at a low temperature, and the light shielding film 209 may be an aluminum film or the like.

  Further, although not shown in the figure, after forming the peripheral wiring, a layer of a high refractive index intra-layer lens material that becomes the intra-layer lens 201, for example, a SiN film by plasma CVD, is formed on the entire surface by 0.5 to It is formed to a thickness of 2.0 μm.

  Here, when the refractive index of the inner lens 201 is set to 1.9 to 2.0, a SiN film by plasma CVD is formed as a layer of the inner lens material. When the refractive index of the inner lens 201 is 1.5 to 1.9, a SiON film by plasma CVD is formed as a layer of the inner lens material.

  Further, a resist is applied on the lens material layer to be the in-layer lens 201, and a lens shape patterning for obtaining a desired in-layer lens 201 is performed on the resist. Further, in order to obtain the lens shape with the lens material layer, the patterned resist is reflowed at a temperature of 140 to 180 degrees Celsius, for example.

  For this resist, a resin that can be dry-etched by oxygen, such as a novolac resin, can be used.

  Further, the lens shape of the resist is transferred to the lens material layer by dry etching to form the in-layer lens 201.

  Thereafter, a second flattening layer 211 is formed so as to cover the inner lens 201 and the surface thereof is flattened, and then a color filter 212 and a microlens 213 are sequentially formed to form a CCD type solid-state imaging device 200. be able to.

  FIG. 15 is a longitudinal sectional view showing an example of the configuration of the main part of a conventional solid-state imaging device disclosed in Patent Document 2. As shown in FIG.

  As shown in FIG. 15, in manufacturing a conventional solid-state imaging device 300 having an inner lens 302 having a convex surface on each sensor portion 301 in the conventional solid-state imaging device 300, the charge transfer electrode 303 and its A step of forming a lens material of the inner lens 302 on the planarizing film 305 formed so as to embed a base step between the light shielding film 304 and the sensor unit 301, and a resist having a predetermined lens shape on the lens material A step of transferring the lens shape of the resist to the lens material film, and forming the same lens material film 302b on the lens material film 302a to which the lens shape has been transferred to form the inner lens 302. And a manufacturing process.

  FIG. 16 is a longitudinal sectional view showing an example of the configuration of the main part of a conventional solid-state imaging device disclosed in Patent Document 3. As shown in FIG.

  As shown in FIG. 16, a silicon substrate or a p-type well 401 (herein referred to as a substrate) formed on the silicon substrate, for example, an n-type impurity region or the like and a region centering on a pn junction with the substrate 401. A plurality of light receiving portions 402 are formed that perform photoelectric conversion to generate signal charges and accumulate the signal charges for a certain period. On one side and the other side of the light receiving portion 402, a charge transfer portion 403 mainly composed of an n-type impurity region is formed at a predetermined distance.

  An insulating film 404a such as silicon oxide is formed on the substrate 401, and a charge transfer electrode 405 made of polysilicon or the like is formed on the charge transfer portion 403 via the insulating film 404a. The charge transfer unit 403 and the charge transfer electrode 405 correspond to a vertical transfer unit that transfers signal charges in the vertical direction.

  On the charge transfer portion 403 and the light receiving portion 402, a two-layer insulating film 404b and an insulating film 404c are formed. A light shielding film 406 made of a refractory metal such as tungsten (W) is formed on the insulating film 404c so as to cover the charge transfer electrode 405. An opening 406 a is formed in the light shielding film 406 above the light receiving portion 402. The reason why the light shielding film 406 is formed so as to cover the charge transfer electrode 405 is to improve the light shielding property of the light shielding film 406 with respect to the charge transfer portion 403 and suppress smear.

  An etching stopper film 407 made of, for example, silicon oxide is formed so as to cover the light shielding film 406 and the insulating film 404c in the opening 406a. Further, a step adjustment film 408 made of tungsten or the like is formed on the light shielding film 406 with an etching stopper film 407 interposed therebetween.

  An interlayer insulating film 409 made of, for example, PSG (Phosphosilicate glass) or BPSG (Borophosphosilicate glass) is formed so as to cover the step adjusting film 408 and the etching stopper film 407. A recess 409a is formed on the surface of the interlayer insulating film 409, reflecting the shape of the underlying step formed by the step adjusting film 408 and the etching stopper film 407.

On the interlayer insulating film 409, an inner lens 410 having a lens surface with a predetermined curvature on the lower surface is formed in the upper region of the light receiving portion 402, reflecting the shape of the recess 409a. The upper surface of the intralayer lens 410 is flattened. The intralayer lens 410 is made of a material having a sufficiently high light transmittance, such as a silicon nitride film (SiN) or a silicon oxide film (SiO ₂ ).

  A passivation film 411 made of silicon oxide or the like is formed so as to cover the inner lens 410 whose upper surface is flattened. On the passivation film 411, an on-chip color filter 412 is formed. The on-chip color filter 412 is colored in one of red (R), green (G), and blue (B) in the primary color system, and in the complementary color system, for example, cyan (Cy), magenta (Mg) ), Yellow (Ye), green (G) or the like.

  An on-chip lens (OCL) 413 made of a light transmitting material such as a negative photosensitive resin is formed on the on-chip color filter 412. The on-chip lens 413 is formed so as to minimize the gap serving as an ineffective region because the light above the light-shielding film is also effectively used to enter the light receiving unit 402. The light received by the lens curved surface (convex curved surface) of the on-chip lens 413 is condensed, and the light is further collected by the intralayer lens 410 and is incident on the light receiving unit 402.

JP 2000-164837 A JP 2002-76316 A JP 2002-353428 A

  In the conventional solid-state imaging device of FIGS. 13 to 15 described above, a plurality of light receiving portions (a plurality of photodiodes as a plurality of photoelectric conversion elements) formed on a semiconductor substrate and a base step are made of a planarizing film (transparent film). Flatten and form a convex in-layer lens on top of each light-receiving unit on it, flatten the ground level difference by this in-layer lens with another flattening film (transparent film), and then apply a color filter on it After forming and leveling the step of the color filter with a flattening film (transparent film), a condensing microlens is formed on the color filter corresponding to each light receiving portion.

   In this way, each flattening film exists at the upper and lower positions of the lens in the layer, and the light reaching the light receiving part by light reflection occurring at the interface between different kinds of films and the distance from the microlens to the light receiving part becomes long. There has been a problem that the light sensitivity is lowered due to a decrease in the amount of light.

  The in-layer lens 410 convex below the conventional solid-state imaging device in FIG. 16 is formed on the depression 409a of the interlayer insulating film 409 reflecting the depression shape of the base step, so Although the respective flattening films do not exist, the depression 409a of the interlayer insulating film 409 is flattened by the lower convex inner lens 410 itself, and the distance from the microlens 413 to the light receiving portion 402 is somewhat increased. Therefore, there is a problem that the amount of incident light reaching the light receiving unit 402 is reduced by that amount and the light receiving sensitivity is lowered.

  The present invention solves the above-described conventional problems, and minimizes light reflection at the film interface and shortens the distance from the microlens to the light receiving unit to suppress a decrease in the amount of light incident on the light receiving unit. Intra-layer lens and method for manufacturing the same, color filter provided on or above the intra-layer lens and method for manufacturing the same, and image light from a subject is photoelectrically converted and imaged through the intra-layer lens and / or color filter It is an object of the present invention to provide a solid-state imaging device constituted by a semiconductor element, a manufacturing method thereof, and an electronic information device such as a mobile phone device with a camera using the solid-state imaging device as an image input device in an imaging unit.

  The intra-layer lens of the present invention is such that the lens shape is discretely formed for each pixel on the surface side of the intra-layer lens material for embedding the base step for each pixel, thereby achieving the above object.

  Further, it is preferably a condensing lens that is convex upward or downward in the intralayer lens of the present invention or convex upward and downward.

  The method for manufacturing an intra-layer lens according to the present invention is the formation of an intra-layer lens in which the lens surface shape of the intra-layer lens is discretely formed for each pixel on the surface side of the intra-layer lens material in which a base step for each pixel is embedded. It has a process, and the said objective is achieved by it.

  Preferably, the intra-layer lens forming step in the method of manufacturing an intra-layer lens of the present invention is performed by using a gradation photomask having a light transmittance between the maximum and minimum light transmittance, or maximum Alternatively, exposure is performed using a minimum ordinary photomask, or exposure is performed by adjusting the exposure amount and focus during exposure to form the lens surface shape of the in-layer lens.

  The color filter of the present invention is on the above-mentioned intra-layer lens of the present invention, or on the intra-layer lens, on the intra-layer lens for condensing the incident light on the light receiving unit that photoelectrically converts the incident light from the subject and receives it. Immediately, each pixel is discretely formed with a predetermined color arrangement, and the above object is achieved.

  The method for producing a color filter of the present invention includes a layer for condensing incident light on the inner lens or the inner lens of the present invention on a light receiving unit that photoelectrically converts incident light from a subject and receives the light. A color filter forming step of forming a color filter of each color in a predetermined color arrangement discretely for each pixel directly on the inner lens, thereby achieving the above object.

  Preferably, the color filter forming step in the color filter manufacturing method of the present invention is performed by using a gradation photomask having a light transmittance between the maximum and minimum light transmittance, or maximum or The color filters of the respective colors are formed by performing exposure using a minimum normal photomask or adjusting the exposure amount and focus during UV exposure.

  In the solid-state imaging device of the present invention, the lens surface shape of the in-layer lens is discretely formed for each pixel on the surface side of the in-layer lens material for embedding the background step for each pixel, and the lens surface shape is formed on the in-layer lens. A plurality of light-receiving units that form a color filter of a predetermined color array for each pixel and photoelectrically convert image light of each color from a subject condensed through the color filter and the lens in the layer and image it Thus, the above object is achieved.

  In the solid-state imaging device of the present invention, an inner lens is discretely formed for each pixel on the surface side of the inner lens material that embeds the base step for each pixel, and the object from the subject condensed through the inner lens is formed. A plurality of light receiving sections for photoelectrically converting image light to form an image are formed, thereby achieving the above object.

  Further preferably, the base level difference for each pixel in the solid-state imaging device of the present invention is such that the charge transfer electrode for reading and transferring the signal charge from the light receiving portion, the formation region of the light shielding film thereon, and the light receiving portion It is formed between the formation region.

  Further preferably, the light shielding film in the solid-state imaging device of the present invention is a tungsten film or an aluminum film.

  Further preferably, as the inner lens in the solid-state imaging device of the present invention, a convex lens surface shape is formed rising from above the light shielding film through a predetermined thickness of the inner lens material.

  Further, preferably, as an intralayer lens in the solid-state imaging device of the present invention, a convex lens surface shape is formed which rises directly from the light shielding film without intervening the intralayer lens material.

  Further, preferably, the intralayer lenses in the solid-state imaging device of the present invention are in contact with each other or separated from each other.

  Further preferably, the intralayer lens material in the solid-state imaging device of the present invention is a photosensitive and high refractive index coating material.

  Further preferably, the inner lens material in the solid-state imaging device of the present invention is a photosensitive material containing a metal such as titanium and / or zirconium when the refractive index of the inner lens is 1.7 to 2.0. It is a coating material. Moreover, when it is set to 1.9 to 2.0, it is a SiN film, and when the refractive index of the inner lens is set to 1.5 to 1.9, it is a SiON film.

  The method for manufacturing a solid-state imaging device according to the present invention has a lens surface shape of the in-layer lens discretely for each pixel on the surface side of the in-layer lens material in which the base step for each pixel is embedded so that the surface is flattened. And forming a color filter of each color for each pixel in a predetermined color arrangement directly on the intra-layer lens. The objective is achieved.

  Preferably, in the method of manufacturing a solid-state imaging device according to the present invention, the intra-layer lens is discretely provided for each pixel on the surface side of the intra-layer lens material in which the base step for each pixel is embedded so that the surface is flattened. An in-layer lens forming step of forming the lens surface shape of

  Further preferably, in the method for manufacturing a solid-state imaging device of the present invention, at least one of the intra-layer lens forming step and the color filter forming step is a gradation having a light transmittance between a maximum and a minimum. Exposure using a photomask, exposure using a maximum or minimum normal photomask, or exposure by adjusting the exposure amount and focus at the time of exposure, thereby adjusting the lens surface shape of the in-layer lens Form.

  Further preferably, the intra-layer lens forming step in the method for manufacturing a solid-state imaging device of the present invention includes a charge transfer electrode for reading and transferring a signal charge from a light receiving unit that photoelectrically converts incident light, and a light shielding film thereon An intra-layer lens coating step of applying an intra-layer lens material on a base step formed between the formation area of the light receiving portion and the formation area of the light receiving portion, and the applied intra-layer lens material becomes a lens surface shape In this way, there are an intra-layer lens exposure step of exposing using a mask and an intra-layer lens development step of developing the exposed intra-layer lens material using a predetermined developer to obtain a predetermined lens surface shape.

  Further preferably, the color filter forming step in the method for manufacturing a solid-state imaging device of the present invention includes a color filter coating step of directly applying a color filter resist material onto the lens surface-shaped inner lens, A color filter exposure step of exposing the color filter resist material so that the film thickness of the color filter film is uniform along the lens surface shape of the in-layer lens using a mask, and the exposed color filter resist A color filter developing step of developing a color filter by developing the material using a predetermined developer.

  Further preferably, in the color filter forming step in the method of manufacturing a solid-state imaging device of the present invention, the surface of the color filter resist material for the first color is directly planarized on the lens surface-shaped inner lens. Using the mask for the applied color filter resist material and the applied color filter resist material, the film thickness of the color filter film is made uniform along the lens surface shape of the lens in the layer. A first-layer color filter exposing step, and a first-layer color filter formed by developing the exposed first-layer color filter resist material using a predetermined developer. Color filter development process of the eye and the color filter resist material of the second color is applied directly on the inner lens of the lens surface shape so that the surface is flattened. The film thickness of the color filter film along the lens surface shape of the lens in the layer using a mask for the applied color filter resist material of the second layer and the applied color filter resist material of the second layer A second-layer color filter exposure step for exposing so as to be uniform, and a second-layer color filter by developing the exposed second-layer color filter resist material using a predetermined developer. A second-layer color filter developing step for forming a third layer, and a third-layer color filter resist material is applied directly on the inner lens having the lens surface shape so that the surface thereof is flattened. Color filter coating process and the thickness of the color filter film along the lens surface shape of the lens in the layer using a mask for the applied color filter resist material of the third layer A third-layer color filter exposure step for uniformly exposing, and developing the exposed third-layer color filter resist material with a predetermined developer to form a third-layer color filter And a third layer color filter developing step to be formed.

  Further preferably, when the refractive index of the inner lens in the method for producing a solid-state imaging device of the present invention is 1.7 to 2.0, the photosensitive coating material contains a metal such as titanium and / or zirconium. . Moreover, when setting it as 1.9-2.0, when forming the SiN film | membrane by a plasma CVD method as said inner lens material, and making the refractive index of this inner lens into 1.5-1.9, A SiON film is formed by plasma CVD as the inner lens material.

  The electronic information device of the present invention uses a solid-state imaging device that obtains a color image signal by performing predetermined signal processing on the imaging signal output from the solid-state imaging device of the present invention as an image input device for an imaging unit. This achieves the above object.

  With the above configuration, the operation of the present invention will be described below.

  In the present invention, the intra-layer lens material is flattened according to the conventional method by the intra-layer lens in which the lens shape is discretely formed for each pixel on the surface side of the intra-layer lens material for embedding the background step for each pixel and the manufacturing method thereof. Used instead of a film, the amount of light incident on the light receiving unit is reduced by minimizing light reflection at the film interface and reducing the distance from the microlens to the light receiving unit as much as the conventional planarization film is unnecessary. It is possible to suppress the decrease.

  Further, in the present invention, discretely for each pixel, directly on the intra-layer lens or on the intra-layer lens for condensing the incident light on the light receiving unit that photoelectrically converts the incident light from the subject and receives the light. The color filter formed with a predetermined color array and its manufacturing method eliminates the need for the conventional flattening film on the inner lens and minimizes light reflection at the film interface, and the distance from the microlens to the light receiving part. It is possible to suppress the decrease in the amount of light incident on the light receiving portion by shortening the length of the light receiving portion.

  Furthermore, in the present invention, as the solid-state imaging device, the lens surface shape of the intra-layer lens is discretely formed for each pixel on the surface side of the intra-layer lens material for embedding the base step for each pixel. A plurality of light-receiving sections that directly form a color filter of a predetermined color arrangement for each pixel and photoelectrically convert the image light of each color from the subject condensed through the color filter and the intralayer lens, Is formed.

  As a result, an intralayer lens is formed directly on the surface using a transparent insulating film material on the base step using a gradation mask or the like, and a color filter is formed directly thereon using a gradation mask or the like. Therefore, unlike the conventional case, the number of different types of film interfaces is reduced by the amount of the two-layer flattening film between the light receiving part and the color filter, and light reflection occurring at the interface can be suppressed. By shortening the condensing distance, light can be efficiently taken into the light receiving unit, and the light receiving sensitivity can be improved. As described above, it is possible to remove the planarizing films above and below the inner lens and form a color filter directly on the inner lens, and efficiently take incident light into the light receiving unit.

  As described above, according to the present invention, the conventional planarization film above and below the inner lens is deleted, and the base step between the light receiving portion and the charge transfer electrode and the light shielding film and the light receiving portion is embedded with the inner lens material, and By forming a convex in-layer lens on the surface of the in-layer lens material, and forming a color filter directly on the in-layer lens (without a conventional flattening film), As the number decreases, light reflection at the film interface is reduced, and by shortening the focusing distance from the microlens to the light receiving part, incident light can reach the light receiving part more efficiently. Can be improved.

It is a longitudinal cross-sectional view which shows the principal part structural example of the solid-state image sensor in Embodiment 1 of this invention. FIG. 2 is a longitudinal sectional view of a main part up to an intra-layer lens application step in the method for manufacturing the solid-state imaging device in FIG. 1. FIG. 3 is a longitudinal sectional view of a main part up to an intra-layer lens exposure step in the method for manufacturing the solid-state imaging device in FIG. 1. FIG. 3 is a longitudinal sectional view of a main part up to an intra-layer lens developing step in the method for manufacturing the solid-state imaging device in FIG. 1. FIG. 2 is a longitudinal sectional view of main parts up to a first layer color filter coating step in the method of manufacturing the solid-state imaging device of FIG. 1. FIG. 2 is a longitudinal sectional view of a main part up to a first-layer color filter exposure step in the method for manufacturing the solid-state imaging device in FIG. 1. FIG. 2 is a longitudinal sectional view of an essential part up to a color filter developing step for a first layer in the method for manufacturing the solid-state imaging device of FIG. 1. FIG. 4 is a longitudinal sectional view of a main part after performing a color filter developing step from a second layer and a third layer color filter applying step in the method of manufacturing the solid-state imaging device 20 of FIG. 1. It is a principal part longitudinal cross-sectional view which shows the modification of the solid-state image sensor of FIG. It is a principal part longitudinal cross-sectional view which shows the further modification of the solid-state image sensor of FIG. It is a principal part longitudinal cross-sectional view which shows another modification of the solid-state image sensor of FIG. As a second embodiment of the present invention, a schematic configuration of an electronic information device using a solid-state imaging device that obtains a color image signal by performing predetermined signal processing on an imaging signal from the solid-state imaging device of the first embodiment of the present invention as an imaging unit. It is a block diagram which shows an example. It is a longitudinal cross-sectional view which shows the example of a principal part structure of the conventional solid-state image sensor. It is a longitudinal cross-sectional view which shows the example of a principal part structure of the conventional solid-state image sensor currently disclosed by patent document 1. FIG. It is a longitudinal cross-sectional view which shows the example of a principal part structure of the conventional solid-state image sensor currently disclosed by patent document 2. FIG. It is a longitudinal cross-sectional view which shows the example of a principal part structure of the conventional solid-state image sensor currently disclosed by patent document 3. FIG.

  Embodiment 1 of the solid-state imaging device of the present invention and the manufacturing method thereof including the intra-layer lens of the present invention and the manufacturing method thereof, and the color filter and the manufacturing method thereof, and Embodiment 1 of the solid-state imaging device are input as an image. Embodiment 2 of an electronic information device such as a camera-equipped mobile phone device used as an image pickup unit as a device will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a longitudinal cross-sectional view illustrating an exemplary configuration of a main part of a solid-state imaging device 20 according to Embodiment 1 of the present invention.

  In FIG. 1, a solid-state imaging device 20 according to the first embodiment is formed in a matrix on a semiconductor substrate 1, and a plurality of light-receiving units 2 as a plurality of photoelectric conversion units that photoelectrically convert image light from a subject and image it. Is arranged. A charge transfer region 3 for transferring a signal charge read from one light receiving portion 2 in a predetermined direction in the vertical direction is disposed between adjacent light receiving portions 2 of the semiconductor substrate 1. A charge transfer electrode 4 is disposed on the charge transfer region 3 via an insulating film (not shown). An insulating film 5 is formed on the entire surface of the semiconductor substrate 1 and the charge transfer electrode 4. A light shielding film 6 is formed on the insulating film 5 on the charge transfer electrode 4. The light-shielding film 6 is opened above the light-receiving portion 2 for light incidence.

  A base step is formed between the region where the charge transfer electrode 4 and the light shielding film 6 are formed and the region where the light receiving unit 2 is formed. A transparent insulating film material is formed on the base step so that the surface is flattened, and the flat surface of the transparent insulating film material is formed on the surface of the convex lens so as to correspond to each light receiving portion 2. Thus, a condensing inner lens 7 is provided. In short, the surface of the transparent insulating film material (intra-layer lens material) itself on the base step is the lens shape of the in-layer lens 7.

  The color filters 8 of the respective colors are formed on the inner lens 7 directly (without passing through the flattening film) in correspondence with the respective positions of the light receiving unit 2 and the inner lens 7. After the color filter 8a of the first layer is formed, the color filters 8b of the second layer and the third layer are formed in the vacant positions.

  A microlens 10 corresponds to each position of the light receiving unit 2 and the in-layer lens 7 via a transparent flattening film 9 on the color filter 8 of each color, and a matrix corresponding to each of the color filters 8 of each color. It is formed in a shape.

  As described above, since the surface of the transparent insulating film material itself embedded on the base step is the lens shape of the in-layer lens 7, it is not necessary to provide a planarizing film at the upper and lower positions of the in-layer lens as in the prior art. Light reflection that occurs at the interface between different types of films is eliminated, and the distance from the microlens to the light receiving portion is shortened, and the light receiving sensitivity can be improved by suppressing the decrease in the amount of incident light that reaches the light receiving portion.

  Here, the manufacturing method of the solid-state imaging device 20 of Embodiment 1 will be described in detail with reference to FIGS.

  FIG. 2 is a longitudinal sectional view of an essential part up to the intra-layer lens coating step in the method for manufacturing the solid-state imaging device 20 of FIG.

  As shown in FIG. 2, first, as a pre-process of the intra-layer lens coating process, ion implantation or the like of necessary impurities is performed in the semiconductor substrate 1 or the semiconductor well 1 formed in the semiconductor substrate, and the light receiving unit 2 and readout After the gate portion and the charge transfer region 3 are formed, a charge transfer electrode 4 is formed on the surface of the charge transfer electrode 4 in a predetermined pattern via an insulating film (not shown), and the charge transfer electrode 4 is formed on the charge transfer electrode 4 via the interlayer insulating film 5. A light shielding film 6 is formed so as to cover it. At this time, the light-shielding film 6 is formed so that the top of the light-receiving portion 2 is opened for light incidence. Here, since the heat treatment process performed when the base step is flattened is not performed, the light shielding film 6 is not limited to the tungsten film but may be an aluminum film or the like.

  Next, in the intra-layer lens coating step, the intra-layer lens material 71 (for example, a photosensitive positive high refractive index having development solubility) is formed on the underlying step of the charge transfer electrode 4 and the light-shielding film 6 and the light-receiving portion 2. A transparent material is applied so that the surface thereof is flattened.

  Here, when the refractive index of the inner lens 7 is 1.7 to 2.0, it is a photosensitive coating material containing a metal such as titanium and / or zirconium. In the case of 1.9 to 2.0, an SiN film is formed by plasma CVD as the inner lens material 71. Further, when the refractive index of the in-layer lens 7 is set to 1.5 to 1.9, a SiON film is formed as the in-layer lens material 71 by a plasma CVD method.

  FIG. 3 is a longitudinal sectional view of an essential part up to the intra-layer lens exposure step in the method for manufacturing the solid-state imaging device 20 of FIG.

  As shown in FIG. 3, in the in-layer lens exposure step, an in-layer lens material 71 (for example, a photosensitive positive high refractive index material having development solubility) coated with a flattened surface is used as a transmittance. UV exposure is performed using a gradation photomask 11 having a transmittance between the maximum and minimum.

  FIG. 4 is a longitudinal sectional view of the main part up to the intra-layer lens developing step in the method for manufacturing the solid-state imaging device 20 of FIG.

  As shown in FIG. 4, in the in-layer lens development step after the in-layer lens exposure step, the UV-exposed in-layer lens material 71 (for example, a photosensitive positive high refractive index material having development solubility) is predetermined. A convex inner lens 7 is formed by developing and washing away with the developer. The inner lens 7 corresponds to the light receiving portion 2 and has a lens surface shape that is convex from above the light shielding film 6 with a predetermined thickness of the inner lens material 71.

  FIG. 5 is a longitudinal sectional view of an essential part up to the first color filter coating step in the method for manufacturing the solid-state imaging device 20 of FIG.

  As shown in FIG. 5, a color filter resist material 81 (for example, a negative type) is applied directly on the in-layer lens 7 having a convex lens surface shape so that the surface thereof is flattened.

  FIG. 6 is a longitudinal sectional view of the main part up to the first-layer color filter exposure step in the method for manufacturing the solid-state imaging device 20 of FIG.

  As shown in FIG. 6, the color filter film on the inner lens 7 is applied to the applied color filter resist material 81 using a gradation photomask 12 having a transmittance between the maximum and minimum transmittance. Is UV-exposed so as to be almost uniform. At this time, the UV exposure is performed only for the color filter of the color of the first layer. For example, in the case of G (green) in the case of the Bayer array, UV exposure is performed at the position of the first color filter in a checkered pattern.

  FIG. 7 is a longitudinal sectional view of the main part up to the first color filter developing step in the method of manufacturing the solid-state imaging device 20 of FIG.

  As shown in FIG. 7, in the first layer color filter developing step after the first layer color filter exposure step, the exposed first layer color filter resist material 81 is used with a predetermined developer. The surface is formed on the surface of the convex lens by developing and washing away. In this way, the first-layer color filter 8a is formed directly on the inner lens 7 at a position corresponding to the color filter of the first-layer color.

  FIG. 8 is a longitudinal sectional view of a main part after performing the color filter developing process from the second and third color filter coating processes in the method of manufacturing the solid-state imaging device 20 of FIG.

  As described above, in the same manner as the formation of the first layer color filter, the second layer color filter coating step is sequentially performed and the color filter developing step is sequentially performed. Further, as described above, the third layer color filter is formed. The color filter development process is performed from the coating process, and as shown in FIG. 8, the color filters 8b of the second layer and the third layer are placed at positions where the color filters 8a of the first layer color are vacant. Sequentially formed.

  As described above, in the manufacturing method of the solid-state imaging device 20 according to the first embodiment, the charge transfer electrode 4 for reading and transferring the signal charge from the light receiving unit that photoelectrically converts incident light and the formation region of the light shielding film 6 thereon And an intra-layer lens application step for applying the intra-layer lens material 71 on the base step formed between the light receiving unit 2 and the formation region of the light receiving portion 2 so that the surface thereof is flattened, and the applied intra-layer lens material 71 An intra-layer lens exposure step in which a mask is used to expose the lens surface shape, and the exposed intra-layer lens material 71 is developed using a predetermined developer to obtain a predetermined lens surface shape. A lens development step, a first color filter application step for applying a first color filter resist material 81 directly on the inner lens 7 having the lens surface shape so that the surface thereof is flattened, and application Is A first color filter exposure step for exposing the color filter resist material 81 so that the film thickness of the color filter film becomes uniform along the lens surface shape of the in-layer lens 7 using a mask; A first color filter developing step of developing the first color filter resist material 81 using a predetermined developer to form a first color filter 8a, and a lens surface shape layer A second color filter coating material is applied directly on the inner lens 7 so as to flatten the surface of the second color filter resist material 81, and the applied second color filter resist material. 81, the second layer color filter exposure is performed using a mask so that the film thickness of the color filter film is uniform along the lens surface shape of the in-layer lens 7. A second color filter developing process for developing the second color filter 8b by developing the exposed second color filter resist material 81 with a predetermined developer; and a lens. A third color filter application step of applying a third color filter resist material 81 directly on the surface-shaped inner lens 7 so that the surface thereof is flattened, and a third layer applied A third-layer color filter exposure process for exposing the color filter resist material 81 so that the film thickness of the color filter film becomes uniform along the lens surface shape of the in-layer lens 7 using a mask; A third-layer color filter developing step of developing the third-layer color filter resist material 81 using a predetermined developer to form a third-layer color filter 8b. The

  In this way, the intralayer lens 7 is formed on the base step using the gradation mask 11 using the transparent insulating film material (photosensitive positive high refractive index material having development solubility), and the gradation. In order to form a color filter (photosensitive negative material having development solubility) directly on the mask 12 using the mask 12, two layers are flattened between the light receiving portion 2 and the color filter 8 as in the prior art. Since there are no films, the number of different film interfaces decreases, light reflection occurring at the interfaces can be suppressed, and the distance from the microlens 10 to the light receiving unit 2 is shortened, so that light can be efficiently taken into the light receiving unit 2. And the light receiving sensitivity can be improved.

  That is, the conventional flattening films above and below the inner lens 7 are deleted, the underlying step between the light receiving portion 2, the charge transfer electrode 4, and the light shielding film 6 is embedded with the inner lens material 71, and the inner lens material The convex inner lens 7 is formed on the surface 71, and the color filter 8 is directly formed on the inner lens 7 (without a conventional flattening film). Accordingly, light reflection at the film interface is reduced by the amount of decrease, and by shortening the distance from the microlens 10 to the light receiving unit 2, incident light can be made to reach the light receiving unit 2 more efficiently. Can be improved.

  In the first embodiment, the inner lens material 71 (for example, a photosensitive positive electrode having development solubility) is formed on the underlying step of the charge transfer electrode 4 and the light shielding film 6 and the light receiving portion 2. The high-refractive-index transparent material) itself has a lens shape of the in-layer lens 7, and the lens surface shape is convex from above the light-shielding film 6 through a predetermined thickness of the in-layer lens material 71. It has a lens surface shape. A color filter 8 is formed directly on the inner lens 7 with a substantially uniform film thickness along the lens surface shape. The present invention is not limited to this, and an intralayer lens 7a and a color filter 82 as shown in FIG. In FIG. 1, a convex lens surface shape is formed by rising from above the light shielding film 6 through a predetermined thickness of the inner lens material of the inner lens 7, whereas in FIG. The lens surface shape of the inner lens 7a rises directly from the light-shielding film 6 without the inter-layer lens material, and a convex lens surface shape is formed on the upper surface. The height position of the in-layer lens 7 can be adjusted by a predetermined thickness of the in-layer lens material so that the light can be accurately condensed on the light receiving unit 2.

  FIG. 9 is a longitudinal sectional view of an essential part showing a modification of the solid-state imaging device 20 of FIG.

  As shown in FIG. 9, in the solid-state imaging device 30, an intra-layer lens material 71 (for example, having development solubility) is formed on a base step between the charge transfer electrode 4, the light shielding film 6, and the light receiving portion 2. The photosensitive positive type high refractive index transparent material) itself has a lens shape of the in-layer lens 7a, but the lens surface shape of the in-layer lens 7a intervenes a predetermined thickness of the in-layer lens material 71. Instead, it has a convex lens surface shape rising directly from the light shielding film 6. The adjacent in-layer lenses 7a are separated, and the color filters 82 formed directly on the in-layer lenses 7a are in contact with each other on the left and right. The color filter 82 is formed with a substantially uniform film thickness along the lens surface shape of the in-layer lens 7a except for the outer periphery of the lens.

Hereinafter, a further modification will be described in detail with reference to FIGS. 10 and 11. FIG. 10 is a longitudinal sectional view of an essential part showing a further modification of the solid-state imaging device 20 of FIG.

  As shown in FIG. 10, in the solid-state imaging device 40, an intra-layer lens material 71 (for example, having development solubility) is formed on a base step between the charge transfer electrode 4 and the light shielding film 6 and the light receiving portion 2. The photosensitive positive type high-refractive-index transparent material) itself has the lens shape of the in-layer lens 7b, but the lens surface shape of the in-layer lens 7b intervenes the predetermined thickness of the in-layer lens material 71. Thus, a convex lens surface shape rising from above the light shielding film 6 is formed. The adjacent inner lenses 7b are in contact with each other, and the color filters 83 formed directly on the inner lenses 7b are in contact with each other between the adjacent color filters 83. The color filter 83 is formed with a uniform film thickness over the entire surface along the lens surface shape of the in-layer lens 7a.

  FIG. 11 is a vertical cross-sectional view of a main part showing still another modification of the solid-state imaging device 20 of FIG.

  As shown in FIG. 11, in the solid-state imaging device 50, an intralayer lens material 71 (for example, having development solubility) is formed on a base step between the charge transfer electrode 4 and the light shielding film 6 and the light receiving unit 2. The photosensitive positive type high refractive index transparent material) itself has a lens shape of the in-layer lens 7c, but the lens surface shape of the in-layer lens 7c intervenes a predetermined thickness of the in-layer lens material 71. Instead, it has a convex lens surface shape rising directly from the light shielding film 6. The adjacent in-layer lenses 7c are in contact with each other, and the color filters 83 formed directly on the in-layer lens 7c are in contact with each other on the left and right. The color filter 83 is formed with a uniform film thickness over the entire surface along the lens surface shape of the in-layer lens 7c.

  The intra-layer lens 7b in FIG. 10 and the intra-layer lens 7c in FIG. 11 show a case where the lens curvature is small and the condensing rate is small compared to the intra-layer lens 7 in FIG. As described above, the inner lens 7 in FIG. 1 and the inner lens 7b in FIG. 10 have a higher inner lens height than the inner lens 7a in FIG. 9 and the inner lens 7c in FIG. ing. These lens curvatures (condensation rates) and in-layer lens heights are adjusted so that incident light can be accurately collected by the light receiving unit 2.

  In the case of the solid-state imaging devices 30, 40, and 50 described above, as in the case of the solid-state imaging device 20, the conventional planarization films above and below the inner lenses 7 a to 7 c are deleted, and the light receiving unit 2 and charge transfer are performed. A base step between the electrode 4 and the light shielding film 6 is embedded with an in-layer lens material 71, and a convex in-layer lens 7a, 7b or 7c is formed on the surface of the in-layer lens material 71. , 7b or 7c (without using a conventional flattening film), by directly forming the color filter 82 or 83, the light reflection at the film interface is reduced by the number of the different film interfaces reduced. In addition, since the distance (height) from the microlens 10 to the light receiving unit 2 is shortened, incident light can reach the light receiving unit 2 more efficiently, and the light receiving efficiency can be improved.

  In the first embodiment, the case where the inner lenses 7, 7 a, 7 b and 7 c are convex convex lenses has been described. However, the present invention is not limited to this, and the inner lenses are convex convex collectors. An optical lens may be used, and furthermore, the in-layer lens may be a condensing lens that is convex upward and downward. In any case, if an intra-layer lens is formed in the intra-layer lens material 71 for embedding the base step for each pixel, a planarizing film becomes unnecessary, light reflection at the film interface is minimized, and from the microlens to the light receiving section. Thus, the object of the present invention can be achieved in which the distance can be shortened to suppress a decrease in the amount of light incident on the light receiving unit.

  In the first embodiment, the surface side of the in-layer lens material 71 in which the base step for each pixel is embedded is exposed using the gradation photomask 11 having a light transmittance between the maximum and minimum. The intra-layer lens forming step for discretely forming the lens surface shape of the intra-layer lens 7 for each pixel by developing, and the transmittance between the maximum and minimum light transmittance directly on the intra-layer lens A case of having a color filter forming step of forming a color filter 8 of each color for each pixel with a predetermined color arrangement (for example, a Bayer arrangement) by exposing and developing using a gradation photomask 12 having However, the present invention is not limited thereto, and the surface side of the in-layer lens material 71 in which the base level difference for each pixel is embedded is exposed using the gradation photomask 11 having a transmittance between the maximum and minimum light transmittance. By developing An intra-layer lens forming step for discretely forming the lens surface shape of the intra-layer lens 7 for each pixel, and a color filter 8 of each color for each pixel with a predetermined color arrangement on the intra-layer lens 7 via a planarizing film. And a color filter forming step to be formed.

  In this case, the color filter forming process can be performed by UV exposure of the color filter material 81 using the maximum or minimum normal photomask, or by adjusting the exposure amount and focus during UV exposure. . Thus, the first to third color filters 8a and 8b can be sequentially formed.

  Furthermore, as another example, in the in-layer lens exposure step, an in-layer lens material 71 (for example, a photosensitive positive high refractive index material having development solubility) coated with a flattened surface is used. In addition to the UV exposure using the gradation photomask 11 having a transmittance between the maximum and minimum, the UV exposure is performed using the maximum or minimum normal photomask, or the exposure amount and focus during the UV exposure. May be adjusted and UV exposure may be performed. Also in this case, the convex in-layer lens 7 can be formed directly on the surface side of the in-layer lens material 71 in which the base step is embedded.

  Furthermore, as another example, in the intra-layer lens exposure step, an intra-layer lens material 71 (for example, a photosensitive positive high refractive index material having development solubility) coated with a flattened surface is applied to this layer. A resist is applied on the in-layer lens material 71 to be the inner lens 7, and patterning of the lens surface shape for obtaining a desired in-layer lens 7 is performed on the resist. Further, in order to obtain the lens surface shape from the in-layer lens material 71, the patterned resist is reflowed at a temperature of 140 to 180 degrees Celsius, for example. For this resist, a resin that can be dry-etched by oxygen, such as a novolac resin, can be used.

  Further, the inner lens 7 may be formed by transferring the lens surface shape of the resist to the inner lens material 71 by dry etching.

  In any case, if the inner lens is formed directly on the inner lens material 71 for embedding the base step for each pixel, regardless of the method of forming the inner lens, a planarizing film becomes unnecessary, and light at the film interface is eliminated. It is possible to achieve the object of the present invention that can reduce reflection as much as possible and suppress a decrease in the amount of incident light to the light receiving unit by shortening the distance from the microlens to the light receiving unit.

(Embodiment 2)
FIG. 12 shows, as Embodiment 2 of the present invention, solid-state imaging that obtains a color image signal by performing predetermined signal processing on the imaging signal from the solid-state imaging device 20 (or 30 or 40 or 50) of Embodiment 1 of the present invention. It is a block diagram which shows the schematic structural example of the electronic information equipment which used the apparatus for the imaging part.

  In FIG. 12, the electronic information device 90 according to the second embodiment is a solid that obtains a color image signal by performing predetermined signal processing on the imaging signal from the solid-state imaging device 20 (or 30 or 40 or 50) according to the first embodiment. An imaging device 91, a memory unit 92 such as a recording medium that can record data after processing the color image signal from the solid-state imaging device 91 for predetermined recording, and the color image signal from the solid-state imaging device 91. Display means 93 such as a liquid crystal display device that can display on a display screen such as a liquid crystal display screen after performing predetermined signal processing for display, and predetermined signal processing for color image signals from the solid-state imaging device 91 for communication The communication means 94 such as a transmission / reception device that enables communication processing after the image processing is performed, and the color image signal from the solid-state imaging device 91 is subjected to predetermined print signal processing for printing. And an image output means 95 such as a printing process can to a printer to. The electronic information device 90 is not limited to this, but in addition to the solid-state imaging device 91, at least one of a memory unit 92, a display unit 93, a communication unit 94, and an image output unit 95 such as a printer. You may have.

  As described above, the electronic information device 90 includes, for example, a digital camera such as a digital video camera and a digital still camera, an in-vehicle camera such as a surveillance camera, a door phone camera, and an in-vehicle rear surveillance camera, and a video phone camera. An electronic device having an image input device such as an image input camera, a scanner device, a facsimile device, a mobile phone device with a camera, and a personal digital assistant (PDA) can be considered.

  Therefore, according to the second embodiment, on the basis of the color image signal from the solid-state imaging device 91, it is displayed on the display screen, or is printed out on the paper by the image output means 95. (Printing), communicating this as communication data in a wired or wireless manner, performing a predetermined data compression process in the memory unit 92 and storing it in a good manner, or performing various data processings satisfactorily Can do.

  Although not particularly described in the first embodiment, the inner lens in which the lens shape is discretely formed for each pixel on the surface side of the inner lens material for embedding the background step for each pixel and the manufacturing method thereof. However, the intra-layer lens material is used instead of the conventional flattening film, so that the conventional flattening film is unnecessary, and light reflection at the film interface is minimized, and the distance from the microlens to the light receiving part is further increased. The object of the present invention can be achieved by shortening the length and suppressing the decrease in the amount of light incident on the light receiving portion.

  Similarly, although not specifically described in the first embodiment, the inner lens for condensing the incident light on the inner lens 7 or the light receiving unit that photoelectrically converts the incident light from the subject and receives the light. Directly above, the color filter formed discretely for each pixel in a predetermined color arrangement and its manufacturing method also minimizes the light reflection at the film interface as much as the conventional flattening film on the inner lens is unnecessary. In addition, the object of the present invention can be achieved in which the distance from the microlens to the light receiving unit is further shortened to suppress a decrease in the amount of light incident on the light receiving unit.

  As mentioned above, although this invention was illustrated using preferable Embodiment 1, 2 of this invention, this invention should not be limited and limited to this Embodiment 1,2. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge, from the description of specific preferred embodiments 1 and 2 of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  The present invention relates to an intra-layer lens discretely arranged in a predetermined color arrangement for each pixel and a manufacturing method thereof, a color filter provided on or above the intra-lens and a manufacturing method thereof, the intra-layer lens and / or Solid-state imaging device comprising a semiconductor element that photoelectrically converts image light from a subject through a color filter and imaging the same, and manufacturing method thereof, for example, a digital video camera and a digital still using the solid-state imaging device as an image input device in an imaging unit Conventional flattening of upper and lower inner lenses in the field of electronic information equipment such as digital cameras such as cameras, image input cameras such as surveillance cameras, scanner devices, facsimile devices, television telephone devices, and mobile phone devices with cameras. The film is removed, and the underlying step between the light receiving part, the charge transfer electrode, and the light shielding film is the inner lens. A convex inner lens is formed on the surface of the inner lens material, and a color filter is directly formed on the inner lens (without a conventional flattening film). As a result, the light reflection at the film interface is reduced as much as the number of different film interfaces decreases, and the incident light reaches the light receiving part more efficiently by shortening the condensing distance from the microlens to the light receiving part. This can improve the light receiving efficiency.

1 Semiconductor substrate (semiconductor well)
2 light receiving portion 3 charge transfer region 4 charge transfer electrode 5 insulating film 6 light shielding film 7, 7a, 7b, 7c inner lens 71 inner lens material 8, 82, 83 color filter 8a, 82a, 83a first layer color Filter 8b, 82b, 83b Color filter of the second layer or the third layer 81 Color filter material 9 Flattening film 10 Microlens 11,12 Gradation photomask 20, 30, 40, 50 Solid-state imaging device 90 Electronic information device 91 Solid-state imaging device 92 Memory unit 93 Display means 94 Communication means 95 Image output means

Claims (24)

  An intra-layer lens in which a lens shape is discretely formed for each pixel on the surface side of the intra-layer lens material for embedding a base step for each pixel.   The in-layer lens according to claim 1, which is a condensing lens convex upward or downward, or convex upward and downward.   An intra-layer lens manufacturing method including an intra-layer lens forming step of discretely forming a lens surface shape of the intra-layer lens for each pixel on the surface side of the intra-layer lens material in which a base step for each pixel is embedded.   The intra-layer lens forming step may be performed by using a gradation photomask having a light transmittance between a maximum and a minimum, or by using a normal photomask having a maximum or minimum, or The method for producing an in-layer lens according to claim 3, wherein the lens surface shape of the in-layer lens is formed by adjusting the exposure amount and focus during exposure.   2. A color filter formed in a predetermined color arrangement discretely for each pixel on the in-layer lens according to claim 1 or directly on the in-layer lens.   A color filter manufacturing method comprising a color filter forming step of forming a color filter of each color in a predetermined color arrangement discretely for each pixel on the in-layer lens according to claim 1 or directly on the in-layer lens. .   The color filter forming step may be performed by using a gradation photomask having a light transmittance between the maximum and minimum light transmittance, or by using a normal photomask having a maximum or minimum light transmittance, or The color filter manufacturing method according to claim 6, wherein the color filter of each color is formed by adjusting an exposure amount and a focus at the time of exposure to perform exposure.   The lens surface shape of the intra-layer lens is discretely formed for each pixel on the surface side of the intra-layer lens material for embedding the background step for each pixel, and the predetermined shape is determined for each pixel directly on the intra-layer lens. A solid-state imaging device in which a plurality of light-receiving sections are formed, in which color filters having the color arrangement are formed, and image light of each color from an object condensed through the color filters and the inner lens is photoelectrically converted and imaged.   An intra-layer lens is discretely formed for each pixel on the surface side of the intra-layer lens material that embeds the ground level difference for each pixel, and image light from the subject collected through the intra-layer lens is photoelectrically converted and imaged A solid-state imaging device in which a plurality of light receiving portions are formed.   A base level difference for each pixel is formed between a charge transfer electrode for reading and transferring a signal charge from the light receiving portion and a light shielding film formation region thereon, and the light receiving portion formation region. Item 10. The solid-state imaging device according to Item 8 or 9.   The solid-state imaging device according to claim 10, wherein the light shielding film is a tungsten film or an aluminum film.   10. The solid-state imaging device according to claim 8, wherein a convex lens surface shape is formed as the inner lens rising from above the light shielding film through a predetermined thickness of the inner lens material.   10. The solid-state imaging device according to claim 8, wherein the inner lens has a convex lens surface shape that rises directly from the light-shielding film and does not include the inner lens material.   The solid-state imaging device according to claim 12, wherein the inner lenses are in contact with each other adjacent to each other or separated from each other adjacent to each other.   The solid-state imaging device according to claim 8 or 9, wherein the intra-layer lens material is a photosensitive and high refractive index coating material.   The intra-layer lens material is a photosensitive coating material containing a metal when the refractive index of the intra-layer lens is 1.7 to 2.0, and an SiN film when the refractive index is 1.9 to 2.0. The solid-state imaging device according to claim 15, which is a SiON film when the refractive index of the in-layer lens is 1.5 to 1.9. An intra-layer lens forming step of discretely forming the lens surface shape of the intra-layer lens on the surface side of the intra-layer lens material embedded so that the surface is flattened so that the surface is flattened for each pixel;
And a color filter forming step of forming a color filter of each color for each of the pixels in a predetermined color arrangement directly on the intra-layer lens.   A solid having an intra-layer lens forming step for discretely forming the lens surface shape of the intra-layer lens for each pixel on the surface side of the intra-layer lens material in which the base level difference for each pixel is embedded so that the surface is flattened Manufacturing method of imaging device.   At least one of the intra-layer lens forming step and the color filter forming step is performed by using a gradation photomask having a light transmittance between a maximum and a minimum, or a maximum or minimum normal The method for producing an intralayer lens according to claim 17 or 18, wherein the lens surface shape of the intralayer lens is formed by performing exposure using a photomask or by adjusting an exposure amount and focus at the time of exposure. . The intra-layer lens forming step includes:
On the base step formed between the charge transfer electrode for reading and transferring the signal charge from the light receiving unit that photoelectrically converts the incident light and the light shielding film forming region thereon, and the light receiving unit forming region An intra-layer lens application step of applying an intra-layer lens material;
An intra-layer lens exposure step of exposing the applied intra-layer lens material using a mask so as to form a lens surface shape;
The method for producing a solid-state imaging device according to claim 17, further comprising an in-layer lens developing step of developing the exposed in-layer lens material using a predetermined developer to obtain a predetermined lens surface shape. The color filter forming step includes
A color filter application step of applying a color filter resist material directly on the lens surface-shaped in-layer lens;
A color filter exposure step of exposing the applied color filter resist material to a uniform thickness of the color filter film along the lens surface shape of the in-layer lens using a mask;
The method for producing a solid-state imaging device according to claim 17, further comprising: a color filter developing step of developing the exposed color filter resist material using a predetermined developer to form a color filter. The color filter forming step includes
A first color filter application step for applying a first color filter resist material so that the surface thereof is flattened directly on the lens surface-shaped in-layer lens;
A first layer color filter exposure step of exposing the applied color filter resist material to a uniform thickness of the color filter film along the lens surface shape of the in-layer lens using a mask; ,
A first layer color filter developing step of developing the exposed first layer color filter resist material using a predetermined developer to form a first layer color filter;
A second color filter application step for applying a second color filter resist material directly on the lens surface-shaped in-layer lens so that the surface thereof is flattened;
A second layer that is exposed using a mask to the applied color filter resist material of the second layer so that the film thickness of the color filter film is uniform along the lens surface shape of the lens in the layer. The color filter exposure process of
A second-layer color filter developing step of developing the exposed second-layer color filter resist material using a predetermined developer to form a second-layer color filter;
A third-layer color filter coating step of directly applying a third-color color filter resist material on the lens surface-shaped in-layer lens so that the surface thereof is flattened;
The third layer is exposed using a mask to the applied color filter resist material of the third layer so that the film thickness of the color filter film becomes uniform along the lens surface shape of the lens in the layer. The color filter exposure process of
And a third-layer color filter developing step of developing the exposed third-layer color filter resist material using a predetermined developer to form a third-layer color filter. The manufacturing method of the solid-state image sensor of description.   When the refractive index of the inner lens is 1.9 to 2.0, a SiN film is formed by plasma CVD as the inner lens material, and the refractive index of the inner lens is 1.5 to 1. The method for manufacturing a solid-state imaging device according to claim 17, wherein an SiON film is formed by plasma CVD as the in-layer lens material.   An electronic information device using, as an image input device, a solid-state imaging device that obtains a color image signal by performing predetermined signal processing on an imaging signal output from the solid-state imaging device according to claim 8.

Images